WO2021039921A1 - 電磁波検出器、電磁波検出装置、検査装置および配線板 - Google Patents

電磁波検出器、電磁波検出装置、検査装置および配線板 Download PDF

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Publication number
WO2021039921A1
WO2021039921A1 PCT/JP2020/032429 JP2020032429W WO2021039921A1 WO 2021039921 A1 WO2021039921 A1 WO 2021039921A1 JP 2020032429 W JP2020032429 W JP 2020032429W WO 2021039921 A1 WO2021039921 A1 WO 2021039921A1
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WO
WIPO (PCT)
Prior art keywords
electromagnetic wave
sensor element
scintillator
radiation
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/032429
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English (en)
French (fr)
Japanese (ja)
Inventor
武裕 中村
良太 猿谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Components Inc
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Canon Components Inc
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Filing date
Publication date
Application filed by Canon Components Inc filed Critical Canon Components Inc
Priority to JP2021543013A priority Critical patent/JPWO2021039921A1/ja
Publication of WO2021039921A1 publication Critical patent/WO2021039921A1/ja
Priority to US17/674,103 priority patent/US11774606B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20186—Position of the photodiode with respect to the incoming radiation, e.g. in the front of, below or sideways the scintillator
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/18—Investigating the presence of flaws defects or foreign matter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2002—Optical details, e.g. reflecting or diffusing layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof

Definitions

  • the present invention relates to an electromagnetic wave detector, an electromagnetic wave detection device, an inspection device, and a wiring board.
  • Patent Document 1 discloses a line sensor including a scintillator that receives radiation and emits light, and a two-dimensional light receiving element that is arranged in a direction that bends from the direction in which the radiation is incident on the scintillator. Since the light receiving element is not directly irradiated with radiation, damage to the light receiving element can be suppressed.
  • An object of the present invention is to provide an advantageous technique for suppressing damage caused by electromagnetic waves of a sensor element in an electromagnetic wave detector.
  • the electromagnetic wave detector includes a base, a sensor element arranged on the main surface of the base, and a sensor element that converts light emitted from a scintillator in which an electromagnetic wave is incident into an electric signal, and a scintillator.
  • a lens unit that is arranged between the sensor element and the lens unit that collects the light generated by the scintillator on the sensor element, and a light transmission that is arranged between the lens unit and the sensor element and transmits the light generated by the scintillator. It is characterized in that it includes a portion and a shielding portion that includes an inner wall located around the sensor element and shields electromagnetic waves, and the inner wall is arranged between the light transmitting portion and the main surface.
  • FIG. 5 is a perspective view showing a configuration example of a covering portion covering the sensor element of the radiation detector of FIG.
  • FIG. 2 is a cross-sectional view showing a configuration example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a configuration example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the covering portion of FIG.
  • FIG. 5 is a perspective view showing a configuration example of a covering portion covering the sensor element of the radiation detector of FIG.
  • FIG. 2 is a cross-sectional view showing a configuration example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the covering portion of FIG. FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the covering portion of FIG.
  • FIG. 2 is a cross-sectional view showing a modified example of the arrangement of the covering portion in FIG.
  • the figure which shows the structural example of the wiring board which concerns on this embodiment The figure which shows the structural example of the wiring board which concerns on this embodiment.
  • the figure which shows the structural example of the wiring board which concerns on this embodiment The figure which shows the structural example of the wiring board which concerns on this embodiment.
  • the figure which shows the structural example of the wiring board which concerns on this embodiment The figure explaining the effect of the wiring board which concerns on this embodiment.
  • the figure which shows the angle dependence of a scattered ray The figure for demonstrating the angle dependence of a scattered ray.
  • the figure which shows the angle dependence of a scattered ray The figure which shows the structural example of the radiation detector, the radiation detection apparatus and the inspection apparatus using the wiring board which concerns on this embodiment.
  • the schematic diagram of the radiation detector which concerns on one Embodiment The schematic diagram of the radiation detector which concerns on one Embodiment.
  • the schematic diagram of the radiation detector which concerns on one Embodiment The schematic diagram of the radiation detector which concerns on one Embodiment.
  • the schematic diagram of the radiation detector which concerns on one Embodiment The schematic diagram of the radiation detector which concerns on one Embodiment.
  • the schematic diagram of the radiation detector which concerns on one Embodiment. The schematic diagram of the radiation detector which concerns on one Embodiment.
  • the schematic diagram of the radiation detector which concerns on one Embodiment The schematic diagram of the radiation detector which concerns on one Embodiment.
  • the schematic diagram of the radiation detector which concerns on one Embodiment. The schematic diagram of the radiation detector which concerns on one Embodiment.
  • FIG. 1 is a diagram showing a configuration example of a radiation detection device 150 using the radiation detector 100 of the present embodiment and an inspection device 180 including the radiation detection device 150.
  • FIG. 2 is an enlarged perspective view of the periphery of the covering portion 110 covering the sensor element 102 of the radiation detector 100.
  • the radiation detector 100 converts the incident radiation into light by the scintillator 104, and converts the converted light into an electric signal by the sensor element 102. Details of the radiation detector 100 will be described later.
  • the radiation detector 100 constitutes a radiation detection device 150 together with a radiation source 151 (electromagnetic wave source) for irradiating the radiation 152.
  • the radiation detection device 150 generates an image (radiation image) of an object 153 arranged between the radiation source 151 and the radiation detector 100.
  • the image generation processor 155 generates a radiation image based on the electric signal acquired by the sensor element 102 of the radiation detector 100.
  • the image generation processor 155 may be mounted on, for example, an external computer or the like to which the electric signal acquired by the sensor element 102 is transmitted, as shown in FIG. Further, for example, the image generation processor 155 may be integrated with the sensor element 102 mounted on the base 101.
  • the inspection device 180 may be configured.
  • the inspection device 180 includes, for example, a line-shaped scintillator 104 and a line-shaped sensor element 102 (for example, a line sensor), and inspects an object 153 moving between the radiation source 151 and the radiation detector 100. It may be a device.
  • the radiation detector 100 includes a base 101, a sensor element 102, a covering portion 110, a lens portion 103, and a scintillator 104.
  • the scintillator 104 converts the radiation 152 incident from the radiation source 151 through the object 153 into light that can be detected by the sensor element 102.
  • the scintillator 104 produces light with a wavelength of 350 nm to 800 nm with a brightness corresponding to the dose of the incident radiation 152.
  • the scintillator 104 may be arranged on the scintillator base 105.
  • the radiation detector 100 may include a scintillator base 105.
  • the sensor element 102 is arranged on the main surface 201 of the base 101, and converts the light generated by the scintillator 104 into an electric signal.
  • the sensor element 102 may include a photoelectric conversion element or a switch element formed on a semiconductor substrate such as silicon.
  • the sensor element 102 may be a line-shaped sensor element having a longitudinal direction (main scanning direction) and a lateral direction (secondary scanning direction) orthogonal to the longitudinal direction, as shown in FIG.
  • the base 101 on which the sensor element 102 is mounted may be a printed wiring board or the like on which a wiring pattern is formed.
  • the lens unit 103 is arranged between the scintillator 104 and the sensor element 102, and collects the light generated by the scintillator 104 on the sensor element.
  • a rod lens array in which a plurality of lens elements are arranged one-dimensionally or two-dimensionally may be used.
  • the rod lens for example, a Selfock (registered trademark) lens or the like can be used.
  • a covering portion 110 is arranged between the lens portion 103 and the sensor element 102 so as to cover the sensor element 102.
  • the covering portion 110 includes a light transmitting portion 108 and a shielding portion 109.
  • the light transmitting unit 108 is arranged between the lens unit 103 and the sensor element 102, and transmits the light generated by the scintillator 104.
  • the shielding portion 109 includes an inner wall 202 located around the sensor element 102 and shields radiation (X-rays) (performs any one of absorption, attenuation, and reflection).
  • the inner wall 202 is arranged between the light transmitting portion 108 and the main surface 201 of the base 101.
  • the shielding portion 109 may be arranged on the main surface 201 of the base 101.
  • the positional relationship between the base 101, the sensor element 102, the covering portion 110, and the lens portion 103 can be fixed by the housing 107.
  • the housing 107 may be made of metal, resin, or the like as long as it can support and fix each configuration arranged in the housing 107. Further, the housing 107 may contain a metal such as lead in order to protect the sensor element 102 and the like from the radiation 152.
  • the radiation 152 irradiated from the radiation source 151 to the scintillator 104 of the radiation detector 100 via the object 153 does not directly enter the sensor element 102.
  • the light generated by the scintillator 104 due to the incident radiation 152 is converted into an electric signal by the sensor element 102 arranged at a position away from the optical axis of the radiation 152.
  • damage to the sensor element 102 due to the radiation 152 can be suppressed.
  • the radiation 152 incident on the scintillator 104 of the radiation detector 100 via the object 153 may be scattered on the scintillator 104 or the scintillator base 105 supporting the scintillator 104 to generate scattered rays 154.
  • the scattered rays 154 pass through the lens unit 103 and enter the sensor element 102.
  • the scattered rays 154 may be further scattered by the housing 107 or the like and enter the sensor element 102.
  • the sensor element 102 may detect the scattered radiation 154, and the image quality of the generated radiation image may be deteriorated.
  • the sensor element 102 may be damaged by the scattered radiation 154.
  • the configurations of the light transmitting portion 108 and the shielding portion 109 of the covering portion 110 for suppressing the influence of the scattered rays 154 on the sensor element 102 will be described.
  • the light transmitting portion 108 is formed of a material capable of transmitting light generated by the scintillator 104.
  • the light transmitting portion 108 may transmit, for example, 80% or more of the light generated by the scintillator 104. Further, the light transmitting unit 108 may transmit 90% or more of the light generated by the scintillator 104, for example. If the light transmitting portion 108 has a certain thickness, the incident of radiation such as X-rays can be suppressed.
  • the light transmitting portion 108 may be, for example, glass having a size of about 3 mm to 5 mm. An appropriate thickness is set according to the focal length of the lens unit 103 and the like. At this time, at least one of lead and bismuth may be added to the glass. By adding a metal such as lead or bismuth to the glass, it is possible to further suppress the radiation from passing through the light transmitting portion 108.
  • the shielding portion 109 is arranged to prevent the scattered rays 154 scattered by the housing 107 or the like from entering the sensor element 102 from an angle close to the direction along the main surface 201 of the base 101.
  • the component of the scattered rays 154 that is incident from an angle close to the normal direction of the main surface 201 of the base 101 can be suppressed from being incident on the sensor element 102 by the above-mentioned light transmitting portion 108. Since radiation is multiple scattered, it is difficult to predict the orbit.
  • the shielding portion 109 can shield radiation more when a material having a large atomic number or a material having a large specific gravity is used. Further, the shielding portion 109 may be arranged on the main surface 201 of the base 101 as shown in FIG. As described above, the base 101 may use a printed wiring board or the like, so that the shielding portion 109 may have an insulating property.
  • a resin sheet or the like may be used for the shielding portion 109. More specifically, a resin containing a metal may be used for the shielding portion 109. By adding a metal such as lead, bismuth, or tungsten to the resin, it is possible to prevent radiation from passing through the shielding portion 109.
  • the shielding portion 109 may be a resin sheet containing tungsten. Further, the shielding portion 109 may be an elastic body. When the shielding portion 109 is an elastic body, the adhesion between the shielding portion 109 and the light transmitting portion 108 and the adhesion between the shielding portion 109 and the base 101 are improved, and not only the incident of scattered rays 154 is suppressed but also the adhesion is suppressed. It is possible to suppress the invasion of particles into the covering portion 110. Thereby, the reliability of the radiation detector 100 can be further improved. For example, as shown in FIG. 2, the sensor element 102 may be sealed by the main surface 201 of the base 101, the light transmitting portion 108, and the shielding portion 109.
  • the sensor element 102 may be surrounded by the inner wall 202 of the shielding portion 109.
  • the present invention is not limited to this, and the inner wall 202 of the shielding portion 109 is arranged at least a part around the sensor element 102, so that the sensor is arranged at an angle close to the direction along the main surface 201 of the base 101.
  • the scattered rays 154 incident on the element 102 can be suppressed.
  • FIGS. 3A and 3B are cross-sectional views of the base 101, the sensor element 102, and the covering portion 110 shown in FIG. 2 in the lateral direction.
  • the upper surface of the shielding portion 109 on the side opposite to the surface of the base 101 in contact with the main surface 201 and the facing surface of the light transmitting portion 108 facing the main surface 201 of the base 101. And are in contact with each other.
  • the contact portion 301 between the upper surface of the shielding portion 109 and the facing surface of the light transmitting portion 108 may surround the sensor element 102. That is, the light transmitting portion 108 may be placed on the upper surface of the shielding portion 109 as a support.
  • FIG. 3A the upper surface of the shielding portion 109 on the side opposite to the surface of the base 101 in contact with the main surface 201 and the facing surface of the light transmitting portion 108 facing the main surface 201 of the base 101. And are in contact with each other.
  • the contact portion 301 between the upper surface of the shielding portion 109 and the facing surface of the light transmitting portion 108 may surround the sensor element 102. That is, the light transmitting portion 108 may be placed on the upper surface of the shielding portion
  • the mass absorption coefficient of the light transmitting portion 108 is ⁇ g
  • the mass absorption coefficient of the shielding portion 109 is ⁇ s
  • the cross section is perpendicular to the main surface 201 of the base 101 through the sensor element 102.
  • X be the shortest length of the portion (contact portion 301) in contact between the shielding portion 109 and the light transmitting portion 108
  • Tg be the thickness of the light transmitting portion 108.
  • 0.01 ⁇ e- ⁇ sX / e- ⁇ gTg ⁇ 10 ... (1) May be satisfied.
  • 0.05 ⁇ e- ⁇ sX / e- ⁇ gTg ⁇ 2 ... (2) May be satisfied.
  • the contact (contact portion) referred to here may have a portion within the range of surface roughness that is not in contact with each other (within the range of surface roughness), except that the contact portion is in contact with each other.
  • the part that is not in contact is also called the contact part).
  • the surface roughness is preferably 20 ⁇ m or less (preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less).
  • the inner wall 202 of the shielding portion 109 and the side wall of the light transmitting portion 108 may be in contact with each other.
  • the contact portion 302 between the inner wall 202 of the shielding portion 109 and the side wall of the light transmitting portion 108 may surround the sensor element 102 in the normal projection of the base 101 onto the main surface 201. That is, the light transmitting portion 108 may be arranged along the inner wall 202 of the shielding portion 109.
  • the mass absorption coefficient of the light transmitting portion 108 is ⁇ g
  • the mass absorption coefficient of the shielding portion 109 is ⁇ s
  • the shortest length between the outer wall and the outer wall is Ws
  • the thickness of the light transmitting portion 108 is Tg.
  • the attenuation rate of the scattered radiation 154 passing through the shielding portion 109 becomes large, and the sensor element 102 passes through the shielding portion 109 and passes through the shielding portion 109, as in the configuration shown in FIG. 3A. It is possible to effectively suppress the scattered radiation 154 incident on the.
  • the configuration shown in FIG. 3A is excellent in assembling property when manufacturing the radiation detector 100.
  • the configuration shown in FIG. 3B has a high shielding force against the scattered rays 154 incident at an angle close to the direction along the main surface 201 of the base 101.
  • Ws which is the width of the shielding portion 109
  • Ws can be, for example, about 2 mm to 3 mm in each of the configurations of FIGS. 3A and 3B. That is, in the configuration of FIG. 3A, X can be about 2 mm to 3 mm.
  • Ts which is the thickness of the shielding portion 109, can be about 1 mm to 1.5 mm.
  • the thickness of the shielding portion 109 when the thickness of the shielding portion 109 is 1.1 mm and the thickness of the sensor element 102 is 0.3 mm, a space of 0.8 mm is generated between the facing surface of the light transmitting portion 108 and the sensor element 102. It will be. Further, in the configuration shown in FIG. 3B, the thickness of the shielding portion 109 may be about 5 mm and the thickness of the light transmitting portion 108 may be about 4 mm.
  • the reflectance to the light generated by the scintillator 104 of the inner wall 202 of the shielding portion 109 may be 20% or less. Further, the reflectance of the inner wall 202 of the shielding portion 109 with respect to the light generated by the scintillator 104 may be 10% or less. Further, the reflectance of the inner wall 202 of the shielding portion 109 with respect to light having a wavelength of 350 nm to 800 nm may be 20% or less, or further 10% or less. Stray light can be suppressed by reducing the light reflectance of the inner wall 202 of the shielding portion 109.
  • the distance from the surface of the lens unit 103 on the side facing the main surface 201 of the base 101 to the main surface 201 is L
  • the opening angle of the lens unit 103 is ⁇
  • the sensor element 102 is the sensor element 102.
  • the amount of light incident on the sensor element is reduced, which is not preferable, and if it exceeds the upper limit value, the entire detector becomes large, which is not desirable. More preferably, 1.2 ⁇ W / (L x tan ⁇ ) ⁇ 4 ... (8) May be satisfied.
  • the lower limit of this equation (8) may be further set to 1.5.
  • the aperture angle ⁇ is the angle at which light spreads from the optical axis.
  • the optical axis 303 (sensor element 102) of the lens portion 103 is arranged in the center with respect to the left and right inner walls 202 of the shielding portion 109, but the optical axis 303 with respect to the left and right inner walls 202. It is conceivable that the distances from (sensor element 102) are different (for example, the sensor element 102 is arranged offset from the center of the left and right inner walls 202).
  • the distance W is the inner wall of the optical axis 303 and the shielding unit 109 of the lens unit 103 as described above. It is the shortest distance from 202, and is the distance between the optical axis 303 and the inner wall 202 close to the optical axis 303.
  • the distance W is the shortest distance between the optical axis 303 of the lens unit 103 and the inner wall 202 of the shielding unit 109 in the lateral direction (secondary scanning direction). Can be the distance of.
  • the distance between the inner walls of the shielding portion 109 in the lateral direction may be about 3 mm to 4 mm, for example, 3.2 mm.
  • the sensor element 102 may have a width of 0.7 mm to 0.8 mm in the lateral direction of 1 mm or less (0.4 mm or more) and a length of about 180 mm in the longitudinal direction.
  • the optical axis 303 of the lens unit 103 is in a cross section perpendicular to the main surface 201 of the base 101 and in a direction parallel to the main surface 201 of the optical axis of each lens. It may be the average position of the position coordinates of.
  • the optical axis 303 of the lens unit 103 is a cross section perpendicular to the main surface 201 of the base 101, and both ends of each lens in a direction parallel to the main surface 201. It may be the position of the center of the optical axis of one lens and the optical axis of the other lens of the two lenses arranged in.
  • the structures of the base 101, the light transmitting portion 108, and the shielding portion 109 are not limited to the structures shown in FIGS. 3A and 3B.
  • the outer wall of the light transmitting portion 108 and the outer wall of the shielding portion 109 may be in a flush relationship, and the outer wall of the shielding portion 109 is larger than the outer wall of the light transmitting portion 108. May be arranged on the side of the sensor element 102.
  • the light transmitting portion 108 and the shielding portion 109 may be integrally formed of the same material.
  • the shielding portion 109 and the base 101 may be integrally formed of the same material.
  • a shielding member 120 that shields radiation is provided between the inner walls of the shielding portion 109 facing each other (and between the light transmitting portion 108 and the base 101). You may.
  • the shielding member 120 may be integrally formed of the same material as the shielding portion 109, or may be configured separately.
  • the distance between the inner walls of the shielding portion 109 is W1
  • the distance between the inner walls of the shielding member 120 is W2
  • the width of the light receiving element (effective light receiving region) of the sensor element 102 is W3.
  • the width of the lens portion 103 (lens effective portion) is W4.
  • W1 is the distance between the inner walls of the shielding portion having a function of shielding radiation at the position closest to the base 101 among the positions where the sensor element 102 is arranged or the positions where the shielding portion 109 is even arranged.
  • W2 refers to the shortest distance between the inner walls of the shielding portion having a function of shielding radiation at a position closer to the base 101 than the light transmitting portion 108.
  • W2 may refer to the distance between the inner walls of the shielding portion having a function of shielding radiation, which is arranged on the surface of the light transmitting portion 108 on the base 101 side.
  • Equation (10) and (11) are conditional expressions that are desirable to be satisfied in balancing securing the amount of light from the lens unit 103 to the sensor element 102 and reducing the amount of radiation incident on the sensor element 102. is there.
  • the relationship between W4, W2, and W3 is reversed depending on the relationship between the width W3 of the light receiving element of the sensor element 102 and the width W4 of the lens unit 103.
  • the equations (10) and (11) are more preferably W4 ⁇ 0.9>W2> W3 ⁇ 1.1 ⁇ ⁇ ⁇ (10a) W4 ⁇ 1.1 ⁇ W2 ⁇ W3 ⁇ 0.9 ⁇ ⁇ ⁇ (11a) It is even better if any one of the above is satisfied.
  • the shielding member 120 is projected in a step shape with respect to the shielding portion 109, but the present invention is not limited to this, and the shielding member 120 may be tapered.
  • the shielding portion 109 and the shielding member 120 may be integrally formed.
  • the shielding portion 109, the light transmitting portion 108, and the shielding portion 109 and 101 are not limited to being in close contact with each other. As shown in FIG. 4D, there may be a gap between the shielding portion 109 and the light transmitting portion 108, or between the shielding portion 109 and the base 101 on which the sensor element 102 is arranged. For example, there may be a space between the shielding portion 109 and the light transmitting portion 108, and the shielding portion 109 and the base 101 may be in close contact with each other. Further, for example, there may be a space between the shielding portion 109 and the base 101, and the shielding portion 109 and the light transmitting portion 108 may be in close contact with each other.
  • the covering portion 110 including the shielding portion 109 and the light transmitting portion 108 By arranging the covering portion 110 including the shielding portion 109 and the light transmitting portion 108, it is possible to suppress the influence of scattered rays 154 and the like. Further, even if a joining member (for example, an adhesive or double-sided tape) for joining each of the shielding portion 109 and the light transmitting portion 108 and between the shielding portion 109 and the base 101 is arranged. Good.
  • a joining member for example, an adhesive or double-sided tape
  • not only the light transmitting portion 108 but also the inner wall 202 of the shielding portion 109 is arranged between the light transmitting portion 108 and the main surface 201 of the base 101 so as to be located around the sensor element 102. .. This makes it possible to effectively suppress the scattered rays 154 incident at an angle close to the direction along the main surface 210 of the base 101.
  • FIGS. 2 to 4D show an example in which the shielding portion 109 is arranged so as to surround the entire circumference of the sensor element 102 provided on the base 101, but the present invention is not limited to this.
  • the inner wall 202 of the shielding portion 109 is arranged on at least a part around the sensor element 102, so that the inner wall 202 is incident on the sensor element 102 at an angle close to the direction along the main surface 201 of the base 101. Scattered rays 154 can be suppressed.
  • the shielding portion 109 may be arranged along the side of the sensor element 102 closest to the radiation source 151.
  • the shielding portion 109 may be arranged along three sides of the sensor element 102 excluding the side farthest from the radiation source 151. As described above, the shielding unit 109 is arranged to prevent the scattered radiation 154 from entering the sensor element 102. However, as shown in FIG. 1, even when the housing 107 is further arranged around the covering portion 110 including the shielding portion 109 and the light transmitting portion 108, the radiation 152 is emitted from the radiation source 151 side. It may be incident. Therefore, by arranging the shielding portion 109 between the sensor element 102 and the radiation source 151, it is possible to suppress the influence of the radiation 152 that is directly incident from the radiation source 151.
  • the optical axis 303 (light rays passing over) of the lens unit 103 is perpendicular to the incident surface and the exit surface of the light transmitting unit 108, and the normal line of the incident surface of the sensor element 102.
  • the configuration parallel to is described, but this is not the case.
  • the incident surface of the light transmitting portion 108 may be tilted with respect to the optical axis 303 of the lens portion 103.
  • the normals of the incident surface of the light transmitting portion 108 and the incident surface of the sensor element 102 may be inclined with respect to the optical axis 303.
  • FIG. 6A the incident surface of the light transmitting portion 108 may be tilted with respect to the optical axis 303 of the lens portion 103.
  • the normals of the incident surface of the light transmitting portion 108 and the incident surface of the sensor element 102 may be inclined with respect to the optical axis 303.
  • the normal lines of the incident surface and the exit surface of the light transmitting portion 108 and the incident surface of the sensor element 102 may all be inclined with respect to the optical axis.
  • the light incident on the light transmitting portion 108 from the lens portion 103 is refracted according to the inclination of the incident surface and the emitting surface of the light transmitting portion 108. That is, the light transmitting portion 108 may have an action of bending the light passing through the lens portion 103 from the optical axis 303 of the lens portion 103.
  • the light transmitting unit 108 changes (deflects, refracts) the optical path of the light (wavelength-converted light) generated by the scintillator 104 that has passed through the optical axis of the lens unit 103 from the optical axis.
  • Bending, parallel movement may be configured.
  • the light ray passing through the above-mentioned optical axis is refracted by the light transmitting portion 108 with respect to the optical axis 303 of the lens unit 103, and the light is refracted to the left side of the figure, and the lens unit 103 It is incident on the sensor element 102 arranged on the left side of the optical axis 303.
  • the optical axis 303 of the lens unit 103 and the normal line 304 at the center of the incident surface of the light of the sensor element 102 do not have to overlap.
  • the optical axis 303 of the lens unit 103 does not have to overlap with the sensor element 102.
  • the sensor element 102 may be arranged at a position that does not overlap with the optical axis 303 of the lens unit 103.
  • the lens unit 103 and the sensor element 102 may be arranged at positions where they do not overlap in the normal projection on the main surface 201 on which the sensor element 102 of the base 101 is arranged. That is, in the normal projection on the main surface 201 on which the sensor element 102 of the base 101 is arranged, the lens unit 103 and the sensor element 102 may be arranged at positions shifted in the lateral direction.
  • the normal line 304 at the center of the incident surface of the light of the sensor element 102 may be tilted with respect to the optical axis 303 of the lens unit 103.
  • the height of the shielding portion 109 (the length between the light transmitting portion 108 and the base 101) may differ depending on the location.
  • the optical axis 303 of the lens unit 103 does not have to overlap with the sensor element 102. That is, the sensor element 102 may be arranged at a position that does not overlap with the optical axis 303 of the lens unit 103.
  • the optical axis 303 referred to here refers to the optical axis of the lens unit 103 and its extension line.
  • the lens portion 103 can be positioned in the housing 107 by being fixed to the housing 107 (see FIG. 1) via the lens fixing portion 350.
  • the lens fixing portion 350 is arranged so as to be in contact with the side surface of the lens portion 103 and to cover the light transmitting portion 108.
  • the lens fixing portion 350 is formed of a metal such as lead or tungsten
  • the lens portion 103 may be more likely to transmit radiation than the lens fixing portion 350. That is, the radiation absorption rate of the lens fixing portion 350 may be higher than the radiation absorption rate of the lens portion 103.
  • the intensity of the scattered radiation 154 incident on the scintillator 104 and scattered becomes smaller when the angle with respect to the surface of the scintillator 104 is smaller. Therefore, for example, when the light transmitting portion 108 bends the light in the direction opposite to that of FIG. 6C and the sensor element 102 is arranged on the lower right side of the drawing, the sensor element 102 is in front of the optical axis 303 of the lens portion 103.
  • the influence of the scattered light 154 can be suppressed as compared with the case where it is arranged in. In this configuration, even when the lens fixing portion 350 does not absorb more radiation than the lens portion 103, the effect of suppressing the influence of the scattered radiation 154 can be obtained.
  • the base 101 on which the sensor element 102 is arranged will be considered.
  • a wiring board printed wiring board
  • wiring layers wiring patterns
  • the covering portion 110 including the shielding portion 109 and the light transmitting portion 108 it is possible to prevent the scattered rays 154 from being incident on the sensor element 102.
  • radiation may be incident on a portion of the wiring board (base 101) that is not covered by the covering portion 110.
  • backscattering may occur in which the radiation is reflected by the wiring layer or the like arranged on the wiring board.
  • the integrated circuit including the semiconductor element (for example, the sensor element 102) mounted on the wiring board may be damaged by the backscattered radiation.
  • FIG. 7A is a cross-sectional view showing a configuration example of the wiring board 400 of the present embodiment.
  • the wiring board 400 includes a mounting surface 410 on which a semiconductor package 404 including an integrated circuit (semiconductor chip such as a CMOS sensor) including a light receiving element (photodiode or the like) and a semiconductor element (transistor or the like) is mounted. There is.
  • the wiring board 400 and the semiconductor package 404 can correspond to the above-mentioned base 101 and sensor element 102, respectively.
  • the wiring board 400 includes at least one wiring layer 402, each of which is composed of a conductor containing copper (which may be another metal).
  • the semiconductor package includes an integrated circuit and an exterior member including the integrated circuit, but the present invention is not limited to this, and the semiconductor package described in the present embodiment may be read as the integrated circuit itself. Further, the semiconductor package does not necessarily have to seal (seal) the integrated circuit (or semiconductor element).
  • the wiring board 400 includes a core layer 401 on which the wiring layer 402 is formed. Further, the wiring board 400 may include an insulating layer 403 (resist layer) that covers the wiring layer 402.
  • the semiconductor package 404 including the integrated circuit 414 is arranged on the core layer 401 via the insulating layer 403, but is not limited to this, and the semiconductor package 404 directly receives the semiconductor package 404. It may be arranged on the core layer 401.
  • a conductor 412 forming a wiring pattern is arranged on the wiring layer 402.
  • the conductor 412 constituting the wiring pattern and the integrated circuit 414 mounted on the semiconductor package 404 are electrically connected to each other through a portion of the conductor 412 exposed to the opening 405 provided in the insulating layer 403 and a lead wire 406. Can be connected.
  • a conductive member such as metal may be embedded in the opening 405.
  • the conductor 412 and the integrated circuit 414 mounted on the semiconductor package 404 are electrically connected to each other via a conductive member embedded in the opening 405 and a lead wire 406.
  • the area of the portion of the region overlapping (overlapping) with the integrated circuit 414 included in the semiconductor package 404 where the conductors 412 constituting the wiring pattern are arranged is 20% or less.
  • the wiring layer 402 may be a wiring layer in which the area of the portion where the conductor 412 is arranged in the region overlapping the integrated circuit 414 in the normal projection on the mounting surface 410 is 1% or less.
  • the wiring layer 402 may be a wiring layer in which the conductors 412 forming the wiring pattern are not arranged in the region overlapping with the integrated circuit 414 in the normal projection with respect to the mounting surface 410. It can be said that the wiring layer 402 is a wiring layer in which the proportion of the portion where the conductors 412 constituting the wiring pattern are arranged is low in the region overlapping with the integrated circuit 414.
  • the number of wiring layers 402 arranged on the wiring board 400 is not limited to one layer.
  • two wiring layers may be arranged on the wiring board 400.
  • conductors 412a and 412b forming a wiring pattern are arranged in a region overlapping with the integrated circuit 414 in the normal projection with respect to the mounting surface 410.
  • the wiring layers 402a and 402b have a low proportion of the portion.
  • the wiring board 400 may be used in an environment exposed to radiation such as a radiation detector.
  • a radiation detector For example, there is a case where an integrated circuit 414 including a photoelectric conversion unit such as a light receiving element is mounted on a semiconductor package 404 mounted on a wiring board 400 to generate a radiation image.
  • the semiconductor package 404 is equipped with a scintillator that converts radiation into light and an integrated circuit 414 having a photoelectric conversion unit that converts light converted by the scintillator into an electric signal.
  • the integrated circuit 414 provided with the photoelectric conversion unit is irradiated with the radiation 501 transmitted through the subject, thereby generating a radiation image.
  • the wiring board 500 has a wiring layer 422a having a wiring pattern composed of conductors 432a and a wiring layer 422b having a wiring pattern composed of conductors 432b.
  • these two wiring layers In the normal projection of the mounting surface 410 on which the semiconductor package 404 is mounted, these two wiring layers have the area of the portion where the conductors 432a and 432b are arranged in the region overlapping the integrated circuit 414 in the semiconductor package 404. It is a wiring layer exceeding 20%.
  • Radiation 501 is converted into light by a scintillator mounted on the semiconductor package 404 and used to generate a radiation image. However, a part of the incident radiation 501 is incident on the wiring board 500 without being absorbed (converted) by the scintillator mounted on the semiconductor package 404. A part of the radiation 501 that has passed through the semiconductor package 404 passes through the wiring board 500. However, the other part of the radiation 501 is backscattered by the conductors 432a and 432b constituting the wiring pattern of the wiring layers 422a and 422b, and re-incidents into the semiconductor package 404 as scattered rays.
  • the conductors 432a and 432b contain metal and are more likely to scatter and reflect radiation than the core layers 401 of the wiring boards 400 and 500.
  • the wiring pattern containing gold, silver, and copper has a higher degree of radiation scattering than the wiring pattern such as aluminum.
  • copper or a copper alloy is often used as a conductor constituting a wiring pattern used for a wiring board, and there is a high possibility that radiation 501 incident on the wiring board 500 is backscattered.
  • the photoelectric conversion unit of the integrated circuit 414 may erroneously detect the scattered radiation.
  • damage such as breaking the bond of crystals such as silicon and forming a dangling bond occurs. In some cases. The formation of dangling bonds can cause white scratches and the like.
  • the damage caused by the irradiation of radiation is not limited to the light receiving element, but may cause a malfunction of the integrated circuit 414 such as a semiconductor element.
  • a structure for suppressing the scattering and reflection of the radiation incident on the wiring board is required.
  • the conductors 412 constituting the wiring pattern are arranged in the region overlapping with the integrated circuit 414 included in the semiconductor package 404 in the normal projection on the mounting surface 410.
  • a wiring layer 402 having a low ratio of 20% or less is arranged.
  • backscattering of radiation in the conductors 412 arranged on the wiring board 400 is suppressed as compared with the configuration in which many conductors 432a and 432b are arranged in the region overlapping the integrated circuit 414 shown in FIG. 8B. Damage to the integrated circuit 414 mounted on the semiconductor package 404 can be suppressed.
  • the conductor 412 constituting the wiring pattern is arranged in a portion of 20% or less of the region overlapping the integrated circuit 414 in the normal projection with respect to the mounting surface 410.
  • the wiring patterns on the right side and the left side of the wiring layer 402a shown in FIG. 8A can be connected to each other by using the wiring pattern passing through the region overlapping with the semiconductor package 404, and the wiring pattern can be freely designed. The decrease in degree can be suppressed.
  • the wiring board 400 shown in FIG. 7C includes two wiring layers.
  • One of the layers is the wiring layer 402 in which the proportion of the portion where the conductor 412 is arranged in the region overlapping the integrated circuit 414 included in the semiconductor package 404 in the normal projection on the mounting surface 410 is low, and the other layer is the wiring layer 402.
  • At least one wiring layer is a wiring layer 402 in which the ratio of the conductors 412 arranged in the region overlapping the integrated circuit 414 included in the semiconductor package 404 is low.
  • the radiation on the wiring board 400 is higher than that in the case where all the wiring layers are the wiring layers 422 in which more conductors 432 are arranged in the region where the integrated circuit 414 overlaps. Backscatter can be suppressed.
  • both the wiring layer 402 and the wiring layer 422 are arranged on the wiring board 400 as the wiring layer, as shown in FIG.
  • the wiring layer arranged on the side of the mounting surface 410 most of the wiring layers is arranged.
  • the wiring layer 402 may be used. Radiation scattered / reflected in the wiring layer closer to the integrated circuit 414 included in the semiconductor package 404 is more likely to re-enter the semiconductor package 404 than radiation scattered / reflected in the wiring layer away from the integrated circuit 414. Because.
  • the wiring layer 422 may be arranged in the vicinity of the mounting surface 410.
  • Layer 422 may be arranged. Even in this case, backscattering of radiation on the wiring board 400 can be suppressed as compared with the case where all the wiring layers are the wiring layers 422 in which a large number of conductors 432 are arranged in the region overlapping the integrated circuit 414.
  • the number of wiring layers arranged on the wiring board 400 may be three or more. In this case, as shown in FIG. 7E, the ratio of the portion where the conductor 412 is arranged in the region where all the wiring layers among the wiring layers arranged on the wiring board 400 overlap with the integrated circuit 414 included in the semiconductor package 404.
  • the wiring layer 402 may have a low value. Further, both the wiring layer 402 and the wiring layer 422 may be arranged in combination.
  • FIG. 9A shows the angle dependence of the scattered radiation intensity. As shown in FIG.
  • FIG. 9B this is the scattering line 551 when the radiation 501 is irradiated from the normal direction of the conductor 412, the surface along the surface of the conductor 412 is 0 °, and the normal direction is 90 °.
  • the ratio of strength at each angle It can be seen that the intensity of the scattered radiation increases as the angle increases, and the intensity of the scattered radiation peaks around 30 °. Among these, it can be seen that the intensity of the scattered radiation is relatively high from 25 ° to 30 °. Further, it can be seen that the scattered radiation sharply decreases when the temperature is 15 ° or less.
  • FIG. 9C is a diagram summarizing the numerical values of FIG. 9A.
  • the largest angle ⁇ of the elevation angles ⁇ of the straight line connecting the semiconductor package 404 and the conductors 412 forming the wiring pattern arranged on the wiring layer 402 with respect to the plane on which the wiring layer 402 is arranged is 30 °.
  • the conductors 412 constituting the wiring pattern may be arranged so as to be as follows (preferably 25 ° or less).
  • the portion of the conductor 412 constituting the wiring pattern closest to the semiconductor package 404 is referred to as a portion 561.
  • the upper end of the portion of the semiconductor package 404 closest to the portion 561 is designated as the portion 562.
  • the conductor 412 and the semiconductor package 404 are arranged so that the elevation angle ⁇ with respect to the surface of the conductor 412 with respect to the portion 561 to the portion 562 is 25 ° or less. Thereby, the influence of the scattered radiation 551 can be suppressed. Further, by setting the elevation angle ⁇ to 15 ° or less, the scattered radiation 551 is substantially eliminated from the semiconductor package 404. As a result, the influence of the scattered radiation 551 on the integrated circuit 414 mounted on the semiconductor package 404 can be further suppressed.
  • the semiconductor package 404 it is more essential to suppress the influence of the scattered radiation 551 on the integrated circuit 414 (semiconductor chip) mounted on the semiconductor package 404. Therefore, the largest angle of elevation of the straight line connecting the integrated circuit 414 mounted on the semiconductor package 404 and the conductors 412 forming the wiring pattern arranged on the wiring layer 402 with respect to the plane on which the wiring layer 402 is arranged.
  • the temperature is 30 ° or less.
  • the conductors 412 constituting the wiring pattern may be arranged so that the maximum angle is 25 ° or less (more preferably 15 ° or less).
  • the largest angle of elevation of the straight line connecting the conductor 412 and the integrated circuit 414 with respect to the plane is 30 ° or less (25 ° or less, or 15 ° or less).
  • the area occupied by the conductor may be 80% or more of the total area of the conductor. This value of 80% is more preferably 95% or more.
  • the thickness of the semiconductor package 404 is about 250 ⁇ m to 350 ⁇ m.
  • the elevation angle ⁇ described above becomes 25 ° or less. This makes it possible to suppress the influence of the scattered radiation 551 on the semiconductor chip mounted on the semiconductor package 404.
  • the elevation angle ⁇ becomes 15 ° or less, and the scattered radiation 551 The influence of can be suppressed.
  • the conductor 412 forming the wiring pattern arranged on the wiring layer 402 and the integrated circuit 414 mounted on the semiconductor package 404 may be separated by 1 mm or more. Further, in the normal projection on the mounting surface 410, the conductors 412 forming the wiring pattern arranged on the wiring layer 402 and the integrated circuit 414 mounted on the semiconductor package 404 may be separated by 1.5 mm or more.
  • a radiation detector, a radiation detection device, and an inspection device using the wiring board 400 will be described as an application example of the wiring board 400 of the present embodiment.
  • the radiation detector 700 is mounted on a scintillator 702 that receives radiation and emits light having a wavelength different from that of radiation, the above-mentioned wiring board 400, and a mounting surface 410 of the wiring board 400, and receives light emitted by the scintillator 702.
  • the wiring board 400 may be equipped with a semiconductor package on which other integrated circuits such as a semiconductor element for operating the light receiving element 701 are mounted. ..
  • the radiation detector 700 may constitute a radiation detection device 710 together with the radiation source 704.
  • the radiation detector 710 generates a radiation image of an object 705 arranged between the radiation source 704 and the radiation detector 700.
  • the image generation processor 706 Based on the signal acquired by the light receiving element 701, for example, the image generation processor 706 generates a radiation image.
  • the image generation processor 706 may be mounted on the semiconductor package mounted on the wiring board 400. Further, the image generation processor 706 may be mounted on a computer or the like outside the wiring board 400 in which the signal acquired by the light receiving element 701 is transmitted from the wiring board 400.
  • the radiation 501 irradiated from the radiation source 704 to the scintillator 702 of the radiation detector 700 via the object 705 does not directly enter the wiring board 400 on which the semiconductor package 404 is mounted. ing. Specifically, the light generated by the scintillator 702 due to the incident of the radiation 501 is acquired by the light receiving element 701 arranged at a position away from the optical axis of the radiation 501. As a result, damage to the integrated circuit 414 mounted on the semiconductor package 404 due to radiation 501 can be suppressed.
  • the radiation 501 incident on the scintillator 702 of the radiation detector 700 via the object 705 may be scattered on the scintillator 702 or the base 703 supporting the scintillator 702 to generate scattered rays 751.
  • the scattered radiation 751 may be incident on the wiring board 400.
  • the wiring board 400 has a wiring layer 402 in which the conductor 412 is not arranged in the region overlapping the integrated circuit 414 included in the semiconductor package 404 as described above. It has an arranged structure. Therefore, further backscattering of the scattered radiation 751 on the wiring board 400 can be suppressed, and damage to the integrated circuit 414 mounted on the semiconductor package 404 can be suppressed.
  • the inspection device 720 uses, for example, a line-shaped scintillator 702 and a sensor chip (line sensor) including a line-shaped light receiving element 701 to move an object 705 moving between the radiation source 704 and the radiation detector 700. It may be an inspection device for inspection.
  • a radiation detector having a scintillator that converts radiation into light and a line sensor that detects light is used for the radiation inspection of the inspection target.
  • the radiation detector is configured to detect radiation incident on a line (called a scan line) longer than the inspection target at one time.
  • a method of using a plurality of cheaper line sensors in combination is known.
  • Patent Document 2 discloses that a plurality of line sensors in which phosphors that convert X-rays into light are laminated are used.
  • the line sensors are arranged so that the line sensors partially overlap each other in the incident direction of X-rays.
  • the line sensor is provided so as to partially overlap the X-ray incident direction, the distance from the inspection target to the phosphor differs for each line sensor. ..
  • the radiation from a radiation source is not completely parallel, so the radiation detector described in Patent Document 2 has a problem that the magnification of the image to be inspected differs for each line sensor.
  • the radiation detector according to the embodiment of the present invention includes a scintillator, a first line sensor, and a second line sensor.
  • the radiation detector 1010 electromagntic wave detector
  • the radiation detector 1010 has a long structure extending in the longitudinal direction, and can detect radiation incident on a scan line extending in the longitudinal direction at one time.
  • the radiation detector 1010 can detect, for example, radiation 1020 such as X-rays that has passed through the object 1030 to be measured on the measurement surface 1040.
  • FIG. 11A is a cross-sectional view of the radiation detector 1010 in a cross section perpendicular to the longitudinal direction.
  • the scintillator 1510 extends along the first axis and can convert the incident radiation 1020 into light.
  • the first axis is the axis parallel to the longitudinal direction of the radiation detector 1010, and therefore the scintillator 1510 has a structure extending in the longitudinal direction. All or part of the scintillator 1510 acts as a scan line extending in the longitudinal direction, and radiation incident on this portion is detected.
  • the scintillator 1510 can generate light having a wavelength of 350 nm to 800 nm with a brightness corresponding to the dose of the incident radiation.
  • the scintillator 1510 may have a continuous integral structure so that a continuous image of the light generated on the scintillator 1510 can be obtained.
  • the scintillator 1510 may be provided on the substrate 1520.
  • the scintillator 1510 is sintered onto the substrate 1520.
  • the scintillator 1510 may have isotropic emission characteristics like a phosphor formed of GOS (GdO 2 S 2).
  • the scintillator 1510 can be provided on the surface of the base material 1520 on the side of the line sensor 1100 and the line sensor 1200. Further, the scintillator 1510 can be provided on the surface of the base material 1520 on the side where the radiation 1020 is incident.
  • the line sensor 1100 and the line sensor 1200 can detect the light generated by the radiation 1020 incident on the surface of the scintillator 1510, so that the detection efficiency can be improved.
  • the line sensor 1100 which is the first line sensor, has a structure extending along a second axis parallel to the first axis.
  • the second axis is an axis parallel to the longitudinal direction of the radiation detector 1010, and therefore the line sensor 1200 also has a structure extending in the longitudinal direction.
  • the length of the line sensor 1100 in the longitudinal direction may be shorter than that of the scintillator 1510, and may be, for example, less than half.
  • FIG. 12A shows the arrangement of the line sensor 1100 and the scintillator 1510 as viewed from the incident direction of the radiation 1020.
  • FIG. 11A corresponds to a cross-sectional view at position AA'in FIG. 12A.
  • the line sensor 1100 can detect light from the first region 1511 of the scintillator 1510.
  • the line sensor 1100 can detect the light from the first region 1511 extending in the longitudinal direction at a time, but there are detection surfaces for detecting the light at both ends in the longitudinal direction of the line sensor 1100. You don't have to. Therefore, the length of the first region 1511 may be shorter than the length of the line sensor 1100.
  • the line sensor 1100 may have a sensor element 1110 and a lens unit 1120.
  • the sensor element 1110 converts the light generated by the scintillator 1510 into an electric signal.
  • the sensor element 1110 may include a photoelectric conversion element or a switch element formed on a semiconductor substrate such as silicon.
  • the sensor element 1110 also has a structure extending in the longitudinal direction along the second axis, and can detect light from the first region 1511 of the scintillator 1510 at a time.
  • the lens unit 1120 is located between the scintillator 1510 and the sensor element 1110, and the light generated by the scintillator 1510 is imaged on the sensor element 1110.
  • the lens unit 1120 may be, for example, a rod lens array. Each rod lens included in the rod lens array extends in the direction from the scintillator 1510 toward the sensor element 1110. Further, the plurality of rod lenses are arranged along the longitudinal direction of the sensor element 1110.
  • the lens unit 1120 having such a configuration can form an image of light from the first region 1511 extending in the longitudinal direction on the sensor element 1110 extending in the longitudinal direction at once.
  • the rod lens may be, for example, a Selfock® lens.
  • the line sensor 1100 may further have a frame 1130, and in this case, the sensor element 1110 and the lens unit 1120 may be fixed to the frame 1130.
  • the frame 1130 may be the housing 107 described above.
  • the structure of the frame 1130 is not particularly limited, and may be formed of, for example, metal or resin. Further, the frame 1130 may contain a metal such as lead in order to protect the sensor element 1110 and the like from radiation.
  • the line sensor 1200 which is the second line sensor, has a structure extending along a third axis parallel to the first axis.
  • the third axis is an axis parallel to the longitudinal direction of the radiation detector 1010, and therefore the line sensor 1200 also has a structure extending in the longitudinal direction.
  • the third axis is different from the second axis, that is, the line sensor 1100 and the line sensor 1200 are arranged at different positions in the cross section perpendicular to the longitudinal direction.
  • the direction from the first axis to the second axis is different from the direction from the first axis to the third axis. Therefore, the line sensor 1100 and the line sensor 1200 can detect the light generated by the scintillator 1510 from different directions. This means that the line sensor 1100 and the line sensor 1200 can simultaneously detect light from the same position on the scintillator 1510.
  • the line sensor 1200 may have the same configuration as the line sensor 1100 except for its arrangement. That is, the line sensor 1200 may have the same sensor element 1210, lens unit 1220, and frame 1230 as the line sensor 1100.
  • the line sensor 1200 can detect light from the second region 1512 of the scintillator 1510. That is, the line sensor 1200 can detect the light from the second region 1512 extending in the longitudinal direction at once. Similar to the line sensor 1100, the detection surfaces for detecting light may not be present at both ends of the line sensor 1200 in the longitudinal direction. Therefore, the length of the second region 1512 may be shorter than the length of the line sensor 1200.
  • the first region 1511 and the second region 1512 are different regions, but they are lined up along the first axis and partially overlap.
  • the light from the overlapping region of the first region 1511 and the second region 1512 can be detected by both the line sensor 1100 and the line sensor 1200. Therefore, according to such a configuration, the light from the entire range of the elongated region on the scintillator 1510 spanning the first region 1511 and the second region 1512 is emitted from the shorter line sensor 1100 and the line sensor. It can be detected by a combination of 1200. Therefore, it becomes easy to reduce the area on the scan line where the generated light is not detected.
  • the projection of the line sensor 1100 on the first axis and the projection of the line sensor 1200 on the first axis overlap.
  • the radiation detector 1010 may have two or more line sensors extending along a second axis.
  • the radiation detector 1010 has a line sensor 1300, which is a third line sensor extending along a second axis, in addition to the line sensor 1100.
  • the line sensor 1300 can have the same configuration as the line sensor 1100.
  • the line sensor 1300 can detect the light from the third region 1513 of the scintillator 1510.
  • the second region 1512 and the third region 1513 may partially overlap. With such a configuration, light from a longer range spanning the first region 1511 to the third region 1513 can be simultaneously detected, that is, the scan line can be made longer.
  • a gap may be provided between the first region 1511 and the third region 1513. That is, the line sensor 1100 and the line sensor 1300 may be arranged at intervals.
  • the line sensor 1100 and the line sensor 1300 may be connected via a connecting portion 1191 extending along a second axis that does not detect light from the scintillator 1510.
  • the connection portion 1191 may be a frame (dummy frame) having the same rigidity as the line sensor 1100. According to such a configuration, since the rigidity along the second axis approaches uniformly, it becomes easy to prevent deformation due to a temperature change or the like.
  • an additional connection 1192 may be provided that extends along the second axis.
  • the radiation detector 1010 may have two or more line sensors extending along a third axis.
  • the radiation detector 1010 has, in addition to the line sensor 1200, a line sensor 1400 which is a fourth line sensor extending along a third axis.
  • the line sensor 1400 can detect light from the fourth region 1514 of the scintillator 1510 and can have the same configuration as the line sensor 1200.
  • the radiation detector 1010 has a connection portion 1292 and a connection portion 1291 that do not detect light from the scintillator 1510 that connects the line sensor 1200 and the line sensor 1400, which extends along the third axis. May have.
  • the second angle formed by the surface may coincide with the second angle.
  • the optical element that collects the light detected by the line sensor 1100 is the lens unit 1120
  • the optical element that collects the light detected by the line sensor 1200 is the lens unit 1220. That is, the optical axis of the lens unit 1120 and the optical axis of the lens unit 1220 may have the same inclination with respect to the surface of the scintillator 1510.
  • the line sensor 1100 and the line sensor 1200 may detect light emitted in a direction having the same angle with respect to the incident direction of radiation. For example, on a plane perpendicular to the first axis, the angle formed by the incident direction of radiation and the traveling direction of light from the first axis to the first line sensor, the incident direction of radiation, and the first axis. The angle formed by the traveling direction of the light toward the second line sensor may match. According to such a configuration, the difference between the images detected by the line sensor 1100 and the line sensor 1200 becomes smaller.
  • the above-mentioned first angle and the above-mentioned second angle may be 45 ° or less, or 30 ° or less, respectively.
  • the second angle formed by the traveling direction of the light toward the second line sensor may be 45 ° or more, or 60 ° or more, respectively.
  • the sensor elements 1110 and 1210 are arranged apart from the space around the scintillator 1510 through which more radiation 1020 passes. Therefore, deterioration of the sensor elements 1110 and 1210 due to radiation can be suppressed.
  • the radiation 1020 emitted from the radiation source 1025 and transmitted through the object 1030 passes between the line sensor 1100 and the line sensor 1200.
  • the radiation detector 1010 may further include a radiation shielding material provided between the radiation source 1025 and the line sensor 1100.
  • a radiation shielding material may be provided at a position closer to the radiation source 1025 than the object 1030, or may be provided adjacent to the object 1030.
  • the line sensor 1100 is provided with the radiation shielding material 1140.
  • the line sensor 1100 may have a surface 1101 facing the incident radiation or facing the direction of the radiation source, or the surface 1101 may be provided with a radiation shielding material 1140.
  • the radiation shielding material 1140 is provided on the surface of the frame 1130 facing the incident radiation.
  • another surface of the line sensor 1100 is directed to the scintillator 1510 to receive light from the scintillator 1510.
  • a collimator (not shown) or the like may prevent the radiation 1020 from directly incident on the line sensor 1100. Even in such a case, the radiation shielding material 1140 can prevent scattered radiation and the like from entering the inside of the line sensor 1100.
  • the radiation shielding material 1140 may limit the range of radiation incident on the scintillator 1510. According to such a configuration, the radiation shielding material 1140 acts as a collimator that limits the range of radiation incident on the scintillator 1510. Since such a radiation shielding material 1140 is closer to the scintillator 1510 than, for example, a collimator arranged adjacent to the measurement surface 1040, the range of radiation incident on the scintillator 1510 can be limited more accurately.
  • the radiation detector has a scintillator 1510 extending along a first axis and a line sensor 1100 that detects light from the scintillator 1510.
  • the line sensor 1100 has a radiation shielding material 1140 facing the incident radiation. The radiation shielding material 1140 may limit the range of radiation incident on the scintillator 1510.
  • the radiation detector 1010 may also include a radiation shielding material provided between the radiation source 1025 and the line sensor 1200. Similar to the line sensor 1100, the line sensor 1200 may be provided with a radiation shielding material 1240, and the radiation shielding material 1240 may limit the range of radiation incident on the scintillator 1510.
  • the distance W between the radiation shielding material 1140 and the radiation shielding material 1240 can be determined as follows. .. With such a configuration, deterioration of the sensor elements 1110 and 1210 due to radiation can be further suppressed.
  • Z is the length of the lens portions 1120 and 1220
  • L is the distance from the lens portions 1120 and 1220 to the scintillator 1510 (optical axis of the lens portion 1120).
  • A represents the pixel size (pixel pitch) in the sub-scanning direction (direction perpendicular to the longitudinal direction) of the sensor elements 1110 and 1210
  • ⁇ represents the inclination of the optical axes of the lens portions 1120 and 1220 with respect to the surface of the scintillator 1510.
  • the angle formed by the optical axis and the surface at the intersection of the optical axis (extension line) of the lens portion and the surface of the scintillator may be used.
  • the angle formed by the plane perpendicular to the direction in which the radiation (X-ray) is incident on the scintillator and the optical axis of the lens portion may be ⁇ .
  • the interval W can be determined to satisfy the above, more preferably.
  • the interval W can be determined so as to satisfy. According to these configurations, deterioration of the lens portions 1120 and 1220 due to radiation can be further suppressed.
  • the sensor element 1110 included in the line sensor 1100 has a detection surface that detects light from the first region 1511, and the normal direction of the detection surface is from the line sensor 1100 to the first axis. It is tilted in the direction toward.
  • FIG. 13 shows such an embodiment. As shown in FIG. 13, when the light from the scintillator 1510 is measured from a direction tilted with respect to the surface of the scintillator 1510, a better image can be obtained by tilting the detection surface of the sensor element 1110 according to the tilt. Obtainable.
  • the direction in which the detection surface is tilted with respect to the direction from the line sensor 1100 to the first axis is opposite to the direction in which the surface of the scintillator 1510 is tilted with respect to the direction from the line sensor 1100 to the first axis. May be good.
  • the amount of inclination (angle) of the detection surface and the amount of inclination (angle) of the surface of the scintillator 1510 are less than 90 °.
  • the lens unit 1120 is a lens that gives an erect image
  • the amount of inclination of the detection surface with respect to the direction from the line sensor 1100 toward the first axis is set to the scintillator 1510 with respect to the direction from the line sensor 1100 toward the first axis. It can be matched with the amount of inclination of the surface of.
  • the sensor element 1210 included in the line sensor 1200 has a detection surface that detects light from the second region 1512, and the normal direction of the detection surface is from the line sensor 1200 toward the first axis. It may be tilted with respect to the direction.
  • the direction in which the detection surface is tilted with respect to the direction from the line sensor 1200 to the first axis is opposite to the direction in which the surface of the scintillator 1510 is tilted with respect to the direction from the line sensor 1200 to the first axis.
  • the lens unit 1220 is a lens that gives an erect image
  • the amount of inclination of the detection surface with respect to the direction from the line sensor 1200 to the first axis is set to the scintillator 1510 with respect to the direction from the line sensor 1200 to the first axis. It can be matched with the amount of inclination of the surface of.
  • the arrangement of the line sensor 1100 and the line sensor 1200, or the arrangement of the second axis and the third axis is not limited to the examples shown in FIGS. 11A and 12A.
  • Another arrangement example of the line sensor 1100 and the line sensor 1200 is shown in FIGS. 14A to 14C.
  • the line sensors 1100 and 1200 may be arranged toward the surface of the scintillator 1510 opposite to the surface on which the radiation 1020 is incident.
  • FIG. 14B even if the line sensors 1100 and 1200 are arranged so that the optical axes of the line sensors 1100 and 1200 have different inclinations with respect to the surface of the scintillator 1510 or the incident direction of the radiation 1020. Good.
  • the line sensors 1100, 1200 may be arranged in the same region of the two regions divided by the region through which the radiation 1020 passes on the plane perpendicular to the first axis. .. In the case of FIG. 14C, the radiation 1020 can be prevented from passing between the line sensors 1100 and 1200.
  • FIG. 15A is a diagram showing a line sensor 1150 showing a modification of FIG. 14C.
  • the radiation detector 1010 is not limited to requiring two separate line sensors 1100 and 1200, as in each of the above embodiments.
  • the radiation detector 1010 includes two sensor elements 1110 and 1210 arranged on one substrate 1610 (which may be the base 101 and the wiring plate 400 described above) and two.
  • the lens units 1120 and 1220 corresponding to the sensor elements 1110 and 1210, respectively, may be arranged in one frame 1180.
  • the sensor element 1110 and the sensor element 1210 may be mounted on another substrate arranged in the frame 1180.
  • FIG. 15B is a diagram showing a modified example of FIG. 14C.
  • the normal 1710 of the surface on which the radiation of the scintillator 1510 is incident may be inclined with respect to the incident direction of the radiation 1020.
  • the difference between the angle formed by the normal line 1710 and the optical axis of the lens unit 1120 and the angle formed by the normal line 1710 and the optical axis of the lens unit 1220 may be 3 ° or less, and further. It may be 1 ° or less.
  • the angle formed by the normal line 1710 and the optical axis of the lens unit 1120 and the angle formed by the normal line 1710 and the optical axis of the lens unit 1220 may be the same angle.
  • the radiation detector 1010 can be used as a component of a radiation inspection device.
  • FIG. 11A also shows such a radiation inspection device.
  • the radiation inspection apparatus shown in FIG. 11A includes a radiation detector 1010 and a radiation source 1025.
  • the radiation emitted from the radiation source 1025 passes through the object 1030 located between the radiation source 1025 and the radiation detector 1010 and enters the scintillator 1510.
  • the object 1030 on the measurement surface 1040 By placing the object 1030 on the measurement surface 1040 and moving the object 1030 on the measurement surface 1040, the entire object 1030 can be irradiated with radiation for inspection.
  • the line sensors 1100 and 1200 are connected to an image generation processor 1050 that generates a radiographic image based on an electric signal generated by the sensor elements 1110 and 1210 receiving light from the scintillator 1510.
  • the image generation processor 1050 may be included in the radiation detector 1010 or may be included in an external information processing device. In this way, the radiological examination device can obtain a radiographic image of the object.
  • the radiological examination apparatus may further have a determination device 1060 for determining the quality of the object 1030 using radiographic image data. In FIG. 11A, the connection between the sensor element 1210, the image generation processor 1050, and the determination device 1060 is omitted.
  • the invention is not limited to the above-described embodiment, and it goes without saying that the above-described embodiments can be used in combination as appropriate, and within the scope of the gist of the invention, each of the above-described embodiments also varies. Can be transformed / changed.
  • the object to be detected by the detector of the present embodiment is radiation, but it is not limited to this, and any electromagnetic wave may be used, and ultraviolet rays (electromagnetic waves) having a wavelength of 10 nm or more and 400 nm or less may be used.
  • the detection target may be any electromagnetic wave, but the present invention works effectively as long as the electromagnetic wave has a wavelength shorter than the wavelength in the visible light region (400 to 700 nm), and the electromagnetic wave having a wavelength of 150 nm or less. Is even more desirable. Furthermore, a great effect can be obtained when detecting the radiation described in the embodiment, particularly X-ray.
  • radiation is a general term for particle radiation such as alpha rays, beta rays, neutron rays, proton rays, heavy ion rays, and intermediate rays, and electromagnetic waves (electromagnetic radiation) such as gamma rays and X-rays.

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PCT/JP2020/032429 2019-08-30 2020-08-27 電磁波検出器、電磁波検出装置、検査装置および配線板 Ceased WO2021039921A1 (ja)

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JP2001078099A (ja) * 1999-07-02 2001-03-23 Canon Inc 撮像装置および撮像システム
WO2004019411A1 (ja) * 2002-08-09 2004-03-04 Hamamatsu Photonics K.K. フォトダイオードアレイ、その製造方法、及び放射線検出器
JP2004163895A (ja) * 2002-09-25 2004-06-10 Fuji Photo Film Co Ltd 放射線像読取装置および励起光カットフィルタ
JP2004327914A (ja) * 2003-04-28 2004-11-18 Matsushita Electric Ind Co Ltd 撮像装置
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JP2018141781A (ja) * 2017-02-27 2018-09-13 キヤノン・コンポーネンツ株式会社 放射線検出器および放射線検出装置

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