WO2021028320A1 - Composant semi-conducteur optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique - Google Patents

Composant semi-conducteur optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique Download PDF

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Publication number
WO2021028320A1
WO2021028320A1 PCT/EP2020/072190 EP2020072190W WO2021028320A1 WO 2021028320 A1 WO2021028320 A1 WO 2021028320A1 EP 2020072190 W EP2020072190 W EP 2020072190W WO 2021028320 A1 WO2021028320 A1 WO 2021028320A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor component
layer
optoelectronic semiconductor
cavities
coupling
Prior art date
Application number
PCT/EP2020/072190
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German (de)
English (en)
Inventor
Hermann BECHERT
Gudrun Lindberg
Britta GÖÖTZ
Original Assignee
Osram Opto Semiconductors Gmbh
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Publication of WO2021028320A1 publication Critical patent/WO2021028320A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder

Definitions

  • An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are specified.
  • An optoelectronic semiconductor component is set up in particular to generate and / or detect electromagnetic radiation, in particular light that is perceptible to the human eye.
  • One object to be solved consists in specifying an optoelectronic semiconductor component with a plurality of emission regions which has a particularly high contrast between adjacent emission regions.
  • a further object to be achieved consists in specifying a method for the simplified production of an optoelectronic semiconductor component with a plurality of emission regions, which method has a particularly high contrast between adjacent emission regions.
  • the optoelectronic semiconductor component comprises a semiconductor body with an active region which is set up to emit electromagnetic radiation of a first wavelength range.
  • the first wavelength range is a range from the electromagnetic spectrum with a specific spectral width.
  • the first wavelength range is preferably in a part of the electromagnetic spectrum that is visible to humans.
  • the active area preferably comprises a pn junction, a double heterostructure, a single quantum well structure (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating or detecting radiation.
  • the semiconductor component is, for example, a light or photodiode.
  • the semiconductor body further comprises a coupling-out area provided for coupling out the radiation. The coupling-out area is designed to couple out at least part of the electromagnetic radiation generated in the active region from the semiconductor body.
  • the optoelectronic semiconductor component comprises a grid layer which is arranged on the coupling-out area and which comprises a plurality of cavities.
  • the grid layer is not necessarily to be understood as a regular grid which has strictly defined geometric shapes. Rather, only the arrangement of the cavities can be designed like a grid.
  • the shape of the cavities is designed in a grid-like manner, with not all cavities having to be arranged strictly in the manner of a mathematical grid.
  • the cavities are in particular arranged in a plurality of rows and columns.
  • the cavities are arranged in a rectangular, preferably square grid.
  • the cavities are arranged in a hexagonal grid.
  • at least a large part of the cavities is arranged in a grid-like manner, but a partial area of the cavities is not arranged on points of the grid.
  • the grid layer is preferably formed with a metal or silicon.
  • Metal can be deposited easily and precisely, in particular by means of galvanic deposition processes.
  • Silicon can advantageously be etched anisotropically by means of wet chemical processes. This simplifies the production of structures with undercuts, for example.
  • the grating layer has a high reflectivity in particular in the spectral range that is visible to humans.
  • the grating layer has a reflectivity of at least 80%, preferably of at least 90% and particularly preferably of at least 95% in the spectral range visible to humans.
  • the active region is divided into a plurality of separately controllable emission regions.
  • the semiconductor body is in particular a pixelated semiconductor body.
  • the active area is designed as a monolithically contiguous area, the emission areas of which can be controlled electrically separately from one another.
  • an anti-adhesive layer is applied at least in regions to the grating layer.
  • a side surface of the grid layer and a top side of the grid layer facing away from the semiconductor body are covered with the anti-adhesive layer.
  • the non-stick layer prevents or prevents materials from adhering to the grid layer. Otherwise, when filling the Cavities with a liquid material, such as a potting or wavelength conversion material, undesired residues of the material remain on the grating layer. These residues can in particular lead to undesired light conduction between adjacent emission areas, which disadvantageously reduces the contrast between the adjacent emission areas.
  • the non-stick layer thus advantageously avoids a deterioration in the contrast between adjacent emission areas.
  • the non-stick layer favors a deposition of, for example, wavelength conversion material on a bottom surface of the cavities facing the semiconductor body, as a result of which the wavelength conversion material experiences good cooling.
  • the cavities are assigned to the emission regions and completely penetrate the grating layer.
  • the alignment of the cavities in the lateral direction is preferably based on the position of at least one emission region.
  • the grating layer is provided in particular for the optical separation of the emission areas from one another.
  • the optoelectronic semiconductor component comprises
  • a semiconductor body with an active region for the emission of electromagnetic radiation of a first Wavelength range is set up and a decoupling surface provided for coupling out the radiation and
  • a grid layer which is arranged on the coupling-out surface and comprises a plurality of cavities, wherein
  • the active area is divided into a plurality of separately controllable emission areas
  • a non-stick layer is applied to the grid layer at least in some areas
  • the cavities are assigned to the emission areas and completely penetrate the grid layer.
  • An optoelectronic semiconductor component described here is based, inter alia, on the following considerations: New applications of optoelectronic semiconductor components, for example in virtual reality systems, strive for higher pixel densities to increase the achievable resolution. In the production of pixelated semiconductor bodies with a plurality of emission regions which are closely spaced from one another, it is becoming increasingly difficult to achieve a clear optical separation of the individual emission regions. However, a clear optical separation is advantageous in order to obtain a high contrast between adjacent emission areas.
  • the uniform introduction of wavelength conversion materials into cavities of the grating layer becomes more difficult as the diameter of the cavities decreases. This can result in disadvantageous bridges of wavelength conversion material over a number of emission areas which adversely affect the contrast between these adjacent emission areas Reduce. Furthermore, a small diameter of the cavities makes uniform filling of the individual cavities difficult.
  • the optoelectronic semiconductor component described here makes use, inter alia, of the idea of arranging a non-stick layer for the wavelength conversion material on the grating layer.
  • a non-stick layer prevents or prevents adhesion of
  • Wavelength conversion material on the grating layer thus advantageously contributes to arranging the wavelength conversion material only in the cavities provided for it.
  • Wavelength conversion material on the grating layer is advantageously reduced or prevented, as a result of which a uniform filling of the cavities can be achieved. Furthermore, for example, the undesirable formation of light-conducting bridges made of wavelength conversion material between adjacent emission regions is advantageously reduced or prevented.
  • the anti-stick layer has a silanol bridge which comprises a silyl unit.
  • the material of the non-stick layer has a silanol bridge.
  • a starting material for the silanol bridge is, for example, a silanol.
  • the silanol is preferably bridged to a silicon atom via an oxygen atom.
  • the silyl unit in particular comprises a silicon atom which is bonded to the oxygen atom of the silanol.
  • the silyl unit preferably has various substituents.
  • a halosilane has a silanol bridge.
  • At least one substituent of the silyl unit is a carbon atom.
  • the carbon atom is part of an alkyl group.
  • the anti-stick layer is formed with a halosilane.
  • a halosilane is a silane in which at least one of the substituents is a halogen atom.
  • the halogen atom is preferably a fluorine atom.
  • the non-stick layer is formed, for example, with a mono-, di-, tri- or tetrafluorosilane.
  • At least one substituent of the halosilane is a carbon atom. At least one substituent of the halosilane is a halogen atom and at least one substituent is a carbon atom. At least one substituent of the halosilane is preferably an alkyl group.
  • the anti-stick layer is formed with a fluorocarbon silane.
  • the fluorocarbon silane is completely or only partially fluorinated.
  • At least one substituent of the fluorocarbon silane is a fluorine atom and at least one substituent is a carbon atom.
  • the surface energy is Non-stick layer lower than the surface energy of the grid layer.
  • the surface energy is a measure of the energy that is necessary to break the chemical bonds when a new surface of a liquid or solid is created. Liquids exhibit poor wetting behavior on materials with a reduced surface energy, so that in particular the adhesion of liquids to the surface is reduced or avoided.
  • the non-stick layer is designed as a self-organizing monolayer (SAM, self-assembled monolayer).
  • SAM self-organizing monolayer
  • Self-organizing monolayers are molecular compositions that arise spontaneously on surfaces through adsorption and, with regard to their alignment, form large, ordered areas. Self-assembling monolayers can be used to adjust a surface energy. In particular, a self-assembling monolayer reduces the surface energy of a body.
  • each cavity has a diameter of at most 100 ⁇ m, preferably of at most 40 ⁇ m and particularly preferably of at most 10 ⁇ m.
  • a small cavity enables an advantageously high resolution when used in a pixelated semiconductor body.
  • cavities with a smaller diameter make it difficult, for example, to introduce wavelength conversion material uniformly into the cavities. In the case of an uneven introduction, for example unequal amounts of wavelength conversion materials in different cavities.
  • At least one embodiment of the optoelectronic semiconductor component at least one
  • Wavelength conversion material arranged in the cavities.
  • a different wavelength conversion material is preferably arranged in adjacent cavities.
  • the wavelength conversion material is used, for example, to convert electromagnetic radiation of the first wavelength range to electromagnetic radiation in a second or third wavelength range that deviates therefrom.
  • the first wavelength range is in the blue
  • the third wavelength range is in the blue
  • the wavelength conversion material is preferably formed with a matrix material into which particles of a converter material are introduced. An attachment of the
  • Wavelength conversion material on the grating layer is reduced or prevented in particular by the non-stick layer.
  • Wavelength conversion material a polysiloxane.
  • Polysiloxane has a high level of radiation permeability and is easy to process using common methods.
  • the polysiloxane is preferably used as matrix material in the wavelength conversion material.
  • a cross-sectional area takes Lattice layer parallel to the coupling-out surface with increasing distance from the coupling-out surface.
  • the cross section runs in particular parallel to the coupling-out surface.
  • the grid layer thus has a shape that tapers to a point with increasing distance from the semiconductor body.
  • a tapering shape of the grating layer advantageously reduces adhesion of, for example, wavelength conversion material to the grating layer.
  • the optoelectronic semiconductor component the
  • Wavelength conversion material has the shape of a lens, the beam axis of which is oriented perpendicular to the decoupling surface.
  • the lens shape is generated, for example, by the surface tension of the converter material.
  • a lenticular wavelength conversion material brings about, for example, advantageous beam shaping with a desired emission characteristic of the electromagnetic radiation from the optoelectronic semiconductor component.
  • a method for producing an optoelectronic semiconductor component is also specified.
  • the optoelectronic component can in particular be produced by means of a method described here. That is to say that all of the features disclosed in connection with the method for producing an optoelectronic semiconductor component are also disclosed for the optoelectronic semiconductor component and vice versa.
  • a semiconductor body is provided with a first one for emitting electromagnetic radiation Active region set up in a wavelength range and a coupling-out surface provided for coupling out the radiation, the active region being divided into a plurality of separately controllable emission regions.
  • a first mask layer is applied to the coupling-out area and the first mask layer is structured, recesses being made in the first mask layer which completely penetrate the first mask layer and the recesses in each case between adjacent emission regions are arranged.
  • the recesses are filled with the material of a grid layer and the first mask layer is subsequently removed.
  • the grid layer is preferably formed with a metal.
  • the grid layer On the side facing away from the semiconductor body, the grid layer has a top side.
  • the grid layer preferably comprises side surfaces which are oriented transversely, in particular perpendicular to the main plane of extent of the grid layer.
  • a second mask layer is applied, which covers the coupling-out area and leaves the grating layer at least partially uncovered.
  • the upper side of the grid layer preferably remains uncovered by the second mask layer.
  • the side surface of the cavities of the grid layer remains uncovered by the second mask layer.
  • an anti-adhesive layer is applied to the grid layer and the second mask layer and the second mask layer is subsequently removed. As a result, the non-stick layer remains only on the grid layer.
  • the first mask layer is formed with a negative photoresist.
  • a negative photoresist polymerizes by exposure and a subsequent baking step and after development the exposed areas remain on the carrier.
  • a negative photoresist is used, for example, to create undercuts.
  • a negative photoresist is therefore particularly advantageous for producing a grating layer with a tapering cross-sectional area.
  • the anti-adhesive layer is deposited by means of a chemical vapor deposition method (CVD method).
  • CVD method chemical vapor deposition method
  • the grating layer is in step C) by means of an electro- applied galvanic process.
  • An electro-galvanic process enables an advantageously high application rate of a metallic structure.
  • structures with a high aspect ratio and / or undercuts can be produced particularly easily by means of an electro-galvanic process.
  • the grating layer is applied in step C) by means of vapor deposition.
  • the cavities are filled with at least one wavelength conversion material.
  • the wavelength conversion material enables, for example, a conversion of the electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range.
  • different cavities can also be filled with different conversion materials.
  • individual cavities are not filled with conversion material or are filled with a radiation-permeable material in order to directly emit the radiation of the emission ranges of the first wavelength range below.
  • the wavelength conversion material is applied by means of spraying. Spray coating enables easy processing of liquid materials.
  • the wavelength conversion material is applied by means of printing. A printing process advantageously enables a particularly targeted application of liquid materials.
  • the wavelength conversion material is applied by means of dispensing. Dispensing allows particularly good control of the amount of material dispensed.
  • Semiconductor component is particularly suitable for use as a pixelated semiconductor emitter in display units or, for example, as a light source for an automobile headlight.
  • FIGS. 1A to 1H show schematic sectional views of an optoelectronic semiconductor component described here in accordance with a first exemplary embodiment in various steps of a method for its production
  • FIGS. 2A to 2E show schematic sectional views of an optoelectronic semiconductor component described here in accordance with a second exemplary embodiment in different steps of a method for its production.
  • FIGS. 1A to 1H show schematic sectional views of an optoelectronic semiconductor component 1 described here in accordance with a first exemplary embodiment in various steps of a method for its production.
  • FIG. 1A shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the first exemplary embodiment in a step of a method for its production.
  • the semiconductor body 10 comprises an active region 100, which is used to generate electromagnetic radiation of a first
  • the active region 100 has a pn junction and is divided into a plurality of emission regions 1000.
  • the edge length of the emission region 1000 is less than 10 pm.
  • a small edge length of the emission areas 1000 advantageously enables a large number of emission areas 1000 per area.
  • the emission areas 1000 are independent controllable from each other.
  • the semiconductor body 10 further comprises a coupling-out area 10A.
  • the coupling-out surface 10A is provided for coupling out at least part of the electromagnetic radiation of the first wavelength range generated in the active region 100.
  • FIG. 1B shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the first exemplary embodiment in a further step of a method for its production.
  • a first mask layer 50 is applied to the coupling-out area 10A of the semiconductor body 10.
  • the first mask layer 50 is formed with a negative photoresist.
  • recesses 500 with undercuts can be formed particularly easily.
  • exposed areas remain, while unexposed areas are detached.
  • the grid layer 20 is formed with silicon, into which an anisotropic structure is etched by means of a wet-chemical etching process, which has undercuts.
  • the first mask layer 50 has a plurality of recesses 500.
  • the recesses 500 have a decreasing cross-sectional area with increasing distance from the coupling-out area 10A.
  • the recesses 500 are each aligned with the areas between two adjacent emission areas 1000.
  • FIG. IC shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the first exemplary embodiment in a further step of a method for its production.
  • a grid layer 20 is arranged in the recesses 500 of the first mask layer 50.
  • the grid layer 20 is arranged by means of an electro-galvanic method or by means of vapor deposition. Starting from the coupling-out area 10A, the cross-sectional area of the grating layer 20 decreases with increasing distance from the semiconductor body 10. This results in a tapering shape of the grating layer 20 with increasing distance from the semiconductor body 10.
  • FIG. ID shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the first exemplary embodiment in a further step of a method for its production.
  • the first mask layer 50 is completely detached from the semiconductor body 10 and the grating layer 20.
  • the grid layer 20 has a plurality of cavities 200.
  • the cavities 200 are assigned to the emission areas 1000. In each case one cavity 200 is aligned in the lateral direction with one of the emission regions 1000.
  • FIG. IE shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the first exemplary embodiment in a further step of a method for its production.
  • a second mask layer 60 is introduced and structured into the cavities 200 of the grid layer 20.
  • the second mask layer 60 is structured in such a way that it only covers the coupling-out area 10A of the semiconductor body 10, but leaves the grating layer 20 uncovered.
  • the side surfaces of the grid layer 20 are exposed.
  • FIG. 1F shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the first exemplary embodiment in a further step of a Method of its manufacture.
  • An anti-adhesive layer 30 is applied to the second mask layer 60 and the grid layer 20.
  • the non-stick layer 30 is applied, for example, by means of a CVD method.
  • the non-stick layer 30 completely covers the second mask layer 60 and the grid layer 20.
  • the non-stick layer 30 comprises a material that forms a self-assembled monolayer (SAM).
  • the anti-stick layer 30 is preferably formed with a fluorocarbon silane. Fluorocarbon silane preferably has a particularly low surface energy, which results in a low wettability of its surface.
  • the non-stick layer 30 reduces or prevents liquids from adhering to it.
  • FIG. IG shows a schematic sectional view of an optoelectronic semiconductor component 1 according to the first exemplary embodiment in a further step of a method for its production.
  • the second mask layer 60 is completely removed.
  • the cavities 200 are exposed.
  • the side surfaces of the grid layer 20 are covered with the non-stick layer 30.
  • the decoupling surface 10A is at least partially exposed.
  • FIG. 1H shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the first exemplary embodiment in a further step of a method for its production.
  • the cavities 200 are partially filled with a wavelength conversion material 40 and partially with a filling material 41.
  • the filling material 41 is radiation-permeable, preferably transparent for electromagnetic radiation of the first wavelength range.
  • the wavelength conversion material 50 and the filler material 41 are applied by means of spraying.
  • Wavelength conversion material 40 comprises a polysiloxane as matrix material and conversion particles embedded therein, which cause a conversion of electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range that deviates therefrom. Different cavities 200 are filled with different wavelength conversion materials 40.
  • the surface energy of the anti-adhesive layer 30 is lower than the surface energy of the grid layer 20.
  • the anti-adhesive layer 30 on the grid layer 20 thus avoids or prevents adhesion of the
  • Wavelength conversion material 40 on the anti-adhesive layer 30 extends only on the coupling-out surface 10A of the semiconductor body 10 and does not wet the anti-adhesive layer 30.
  • the filler material 41 is formed with a polysiloxane which has a high permeability for electromagnetic radiation of the first wavelength range.
  • the filler material 41 is the same material as that in that
  • Wavelength conversion material 40 used matrix material. An adaptation of the anti-adhesive layer 30 to just one material is therefore sufficient. The combination of
  • Wavelength conversion material 40 and the anti-adhesive layer 30 is selected such that adhesion of the wavelength conversion material 40 to the anti-adhesive layer 40 is as difficult as possible.
  • the non-stick layer 30 is on top of that
  • Wavelength conversion material 40 matched or vice versa.
  • the emission regions 1000 which are below the cavity 200 filled with the filling material 41, thus emit their electromagnetic radiation of the first wavelength range directly.
  • FIGS. 2A to 2E show schematic sectional views of an optoelectronic semiconductor component 1 described here in accordance with a second exemplary embodiment in different steps of a method for its production.
  • FIG. 2A shows an optoelectronic semiconductor component 1 in accordance with the second exemplary embodiment in a first step of a method for its production.
  • a first mask layer 50 with a plurality of recesses 500 is arranged on a semiconductor body 10, which comprises an active region 100 and a plurality of emission regions 1000.
  • the first mask layer 50 is formed with a positive photoresist.
  • a positive photoresist is removed from its exposed areas and does not form any undercuts.
  • the emission areas 1000 can be controlled separately from one another.
  • the recesses 500 are each arranged between two adjacent emission regions 1000.
  • FIG. 2B shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the second exemplary embodiment in a further step of a method for its production.
  • the recesses 500 of the first mask layer 50 are filled with the material of a grid layer 20.
  • the grid layer 20 is deposited by means of an electro-galvanic process or by means of vapor deposition. After the grid layer 20 has been deposited the first mask layer 50 has been completely removed.
  • the grid layer 20 includes cavities 200 which are assigned to the emission regions 1000.
  • the side walls of the grating layer 20 run perpendicular to the coupling-out surface 10A of the semiconductor body 10.
  • FIG. 2C shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the second exemplary embodiment in a further step of a method for its production.
  • the cavities 200 of the grid layer 20 are filled with a second mask layer 60.
  • the second mask layer 60 ends flush with the grid layer 20 in the top side of the grid layer 20 facing away from the semiconductor body 10.
  • An anti-adhesive layer 30 is applied to the second mask layer 60 and the grid layer 20.
  • the non-stick layer comprises a fluorocarbon silane, which has a particularly low surface energy and thus shows poor wettability.
  • FIG. 2D shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the second exemplary embodiment in a further step of a method for its production.
  • the second mask layer 60 and parts of the anti-adhesive layer 30 have been completely removed.
  • the upper side of the grid layer 20 is completely covered with the anti-stick layer 30.
  • FIG. 2E shows a schematic sectional view of an optoelectronic semiconductor component 1 in accordance with the second exemplary embodiment in a further step of a method for its production.
  • a Wavelength conversion material 40 arranged in at least some of the cavities 200 of the grid layer 20 .
  • the wavelength conversion material 40 is applied by means of spraying.
  • the non-stick layer 30 prevents the wavelength conversion material 40 from sticking to the top of the grating layer 20. Adhesion would result in the formation of light-conducting structures over several emission areas, which would lead to a deterioration in the contrast between these emission areas 1000.
  • At least one of the cavities 200 is not filled with a wavelength conversion material 40. In the unfilled cavity 200, the electromagnetic radiation of the first wavelength range is emitted directly from the emission range 1000 below.

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

L'invention concerne un composant semi-conducteur optoélectronique (1) qui comprend un corps semi-conducteur (10) doté d'une zone active (100) conçue de sorte à émettre un rayonnement électromagnétique d'une première gamme d'ondes ainsi qu'une surface de découplage (10A) destinée à découpler le rayonnement. Une couche formant grille (20) qui comporte une pluralité de cavités (200) est agencée sur la surface de découplage (10A). La zone active (100) est divisée en une pluralité de zones d'émission (1000) pouvant être commandées de manière séparée. Une couche anti-adhésive (30) est appliquée au moins par endroits sur la couche formant grille (20). Les cavités (200) sont associées aux zones d'émission (1000) et traversent entièrement la couche formant grille (20). L'invention concerne en outre un procédé de fabrication d'un composant semi-conducteur optoélectronique (1).
PCT/EP2020/072190 2019-08-14 2020-08-06 Composant semi-conducteur optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique WO2021028320A1 (fr)

Applications Claiming Priority (2)

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DE102019121877.2A DE102019121877A1 (de) 2019-08-14 2019-08-14 Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
DE102019121877.2 2019-08-14

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120116814A (ko) * 2011-04-13 2012-10-23 엘지이노텍 주식회사 발광 소자 및 이의 제조방법
US20190229098A1 (en) * 2018-01-23 2019-07-25 Epistar Corporation Light-emitting device, manufacturing method thereof and display module using the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017124307A1 (de) * 2017-10-18 2019-04-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120116814A (ko) * 2011-04-13 2012-10-23 엘지이노텍 주식회사 발광 소자 및 이의 제조방법
US20190229098A1 (en) * 2018-01-23 2019-07-25 Epistar Corporation Light-emitting device, manufacturing method thereof and display module using the same

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