WO2021018714A1 - Method for producing a conductor track by thermal spraying, method for producing an electronic module, and electronic module - Google Patents

Method for producing a conductor track by thermal spraying, method for producing an electronic module, and electronic module Download PDF

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Publication number
WO2021018714A1
WO2021018714A1 PCT/EP2020/070762 EP2020070762W WO2021018714A1 WO 2021018714 A1 WO2021018714 A1 WO 2021018714A1 EP 2020070762 W EP2020070762 W EP 2020070762W WO 2021018714 A1 WO2021018714 A1 WO 2021018714A1
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WIPO (PCT)
Prior art keywords
conductor track
contact
spraying
electronic module
electrically conductive
Prior art date
Application number
PCT/EP2020/070762
Other languages
German (de)
French (fr)
Inventor
Stefan Stegmeier
Dulijano PECANAC
Oliver Raab
Erik WEISBROD
Original Assignee
Siemens Aktiengesellschaft
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Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2021018714A1 publication Critical patent/WO2021018714A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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    • H01L2224/241—Disposition
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    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/73267—Layer and HDI connectors
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    • H01L2224/821—Forming a build-up interconnect
    • H01L2224/82101—Forming a build-up interconnect by additive methods, e.g. direct writing
    • H01L2224/82102—Forming a build-up interconnect by additive methods, e.g. direct writing using jetting, e.g. ink jet
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    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Definitions

  • the invention relates to a method for manufacturing a Lei terbahn, a method for manufacturing an electronic module and an electronic module.
  • Electronic modules with semiconductor components can with a
  • Such conductor tracks can be
  • power semiconductors in power modules can be advantageously contacted with planar conductor tracks.
  • a further object of the invention is to specify an improved electronic module which, in particular, has a high load cycle resistance.
  • the at least one conductor track is made porous by means of thermal spraying.
  • a porous conductor track is understood to mean a conductor track in which a volume fraction of at least 5 percent, preferably a volume fraction of at least 20 percent, expediently of at least 40 percent and ideally of at least 50 percent, is free of copper.
  • the conductor track has elastic properties.
  • a conductor track manufactured in this way therefore functions as a spring element, which can easily absorb forces due to thermal expansion and the resulting material stresses.
  • the conductor track can thus be thermally caused, i.e.
  • a conductor track and thus also devices which have at least one conductor track can be designed to be particularly resistant to load changes.
  • a spring element for electrical contact implemented by means of the porous thermally sprayed conductor track does not require any compensating elements by means of which a thickness of the conductor track can be adjusted. Because by means of thermal spraying, the thickness of a conductor track produced according to the invention can be set extremely precisely via the process parameters during thermal spraying.
  • the porosity of the conductor track in the application direction can easily be adjusted and in particular varied as a result of the process parameters during thermal spraying.
  • Purpose- The conductor track is applied layer by layer by means of thermal spraying, so that the process parameters can be changed in particular layer by layer.
  • the porosity can thus be precisely adjusted in the direction perpendicular to the flat extensions of the layers.
  • electrical contacting of conductor tracks can advantageously be realized without pressure, since mechanical clamping or application of force to components that are in contact with the conductor track is not required. Rather, mechanical stresses can easily be avoided during thermal spraying or any mechanical stresses that arise can be easily reduced.
  • the conductor track is preferably formed porously on a contact, in particular a semiconductor contact, by means of thermal spraying, while the conductor track away from the contact is less, preferably not, porous than on the contact.
  • the porosity at the contact can be set particularly high during thermal spraying, so that the spring effect on the contact and thus the load cycle strength on the contact is designed to be particularly high.
  • the at least one conductor track is formed on the contact in the form of a flat contact and the conductor track is formed less porous than on the contact in the direction perpendicular to one or more flat extensions of the flat contact away from the contact.
  • the porosity at the flat contact can be made particularly large, with the electrical conductivity being selected to be sufficiently high even with high porosity due to the flat contact can.
  • conductor track In the direction perpendicular to one or more planar extensions of the planar contact away from the contact, however, conductor track can be formed with lower porosity, so that the conductor track can be formed with a high current-carrying capacity in the direction of one or more extension directions of the planar contact.
  • the different porosities can be achieved during thermal spraying of the conductor track by means of several passes in the direction of one or more extensions of the flat contact.
  • the conductor track is formed with metal, in particular copper, and / or metal oxide, in particular copper oxide.
  • thermal spraying in the case of metal, in particular copper, oxidic phases can be specifically incorporated, for example by means of spraying in an oxygen-rich atmosphere, so that a conductor track with the functionality of a spring element can easily be formed by means of thermal spraying.
  • the conductor track is advantageously formed with at least one electrically conductive material, in particular a metal and / or a semiconductor and / or a metal-ceramic compound and / or a material that can be brought into an electrically conductive state.
  • the conductor track can be formed with a material which becomes electrically conductive by means of a subsequent treatment step, for example by means of heat or irradiation with light, expediently UV light.
  • the electrically conductive material is formed with copper and / or gold and / or aluminum and / or silver and / or nickel and / or tin and / or an alloy with one or more of the aforementioned metals.
  • thermal spraying is suitably carried out by means of atomization from a melt, in particular molten bath spraying, and / or by means of an electric arc and / or gas discharge, in particular arc spraying and / or plasma spraying, and / or by means of gas expansion without combustion, in particular cold gas spraying and / or by means of combustion, in particular wire flame spraying and / or powder flame spraying and / or high-speed flame spraying and / or detonation spraying, and / or by means of a bundled energetic
  • Beam, especially laser spraying are Beam, especially laser spraying.
  • At least one conductor track of the electronics module is manufactured by means of a method according to the invention for manufacturing at least one electrically conductive conductor track as described above.
  • the method according to the invention can advantageously be used to manufacture at least one electrically conductive conductor track in order to increase the load cycle strength.
  • the electronic module according to the invention is manufactured by means of a method for manufacturing an electronic module as described above and / or by means of a method for manufacturing at least one electrically conductive conductor track as described above.
  • this electronic module is a power module.
  • a high level of load alternation is advantageous.
  • the electronic module according to the invention preferably has a power component, in particular a semiconductor component, which is contacted by means of the at least one conductor track.
  • the electronic module according to the invention shown in FIG. 1 is a power module 10 and is manufactured as follows:
  • the copper layer 70 on one of the flat sides 50 of the ceramic plate 30 is structured and carries surface-connected semiconductor components 90, 100 via soldered connections 80.
  • the semiconductor components 90, 100 in the exemplary embodiments shown in the drawing, silicon chips point parallel Surface contacts 110, 120 running to the flat side 50 of the ceramic plate 30, which face away from the flat side 50 of the ceramic plate 30.
  • a porous contact layer 130, 140 is attached to each of the surface contacts 110, 120.
  • the contact layer 130, 140 is formed by means of thermal metal spraying deposited flatly on the surface contacts 110, 120 in the form of a flat contact layer 130, 140.
  • the contact layer 130, 140 is each formed by means of thermal metal spraying of copper particles of several 10 micrometers in diameter, here about 20 micrometers in diameter.
  • the contact layer 130, 140 is each porous in such a way that a volume fraction of at least 5 percent, preferably a volume fraction of at least 20 percent, ideally at least 40 percent Percent, the contact layer 130, 140 is free of copper.
  • lower volume fractions for example less than 5 percent, about 2 percent, or higher volume fractions, for example at least 50 percent, can remain copper-free.
  • the contact layers 130, 140 each have a surface facing away from the flat side 50 of the ceramic plate 30, each in the form of a flat side 150, 160, which are spaced from the flat side 50 of the ceramic plate 30 by an identical distance.
  • the power module 10 is layers 130, 140 filled with an insulation material 170 in the area that remains between the ceramic plate 30 and the flat sides 150, 160 of the contact.
  • the insulation material 170 is, for example, a polymer in the form of a thermoplastic, but in further exemplary embodiments not specifically shown, it can also be a thermoset or some other insulation material.
  • the insulation material 170 is so placed between the ceramic plate 30 and the flat sides 150, 160 of the contact layers 130, 140 that the insulation material on its side facing away from the flat side 50 of the ceramic plate 30 is flat and flush with the flat sides 150, 160 of the Contact layers 130, 140 in a surface 180 closes.
  • the surface 180 is consequently formed, for example, as an otherwise thermoplastic surface 180, which has surface contacts in certain areas which are formed by the flat sides 150, 160 of the contact layers 130, 140.
  • sides 150, 160 conductively connects to one another, deposited.
  • the copper layer 200 is deposited on the surface 180 by means of thermal metal spraying, in the exemplary embodiment shown, copper particles with a diameter of 20 micrometers.
  • thermal metal spraying in the exemplary embodiment shown, copper particles with a diameter of 20 micrometers.
  • the parameters during thermal metal spraying are changed compared to thermal metal spraying of the contact layers 130, 140 that the copper layer 200 is compact, ie with a lower or zero porosity compared with that of the contact layers 130, 140 on the surface 180 is deposited.
  • the power module 210 like. FIG. 2 is otherwise produced in the same way as the power module 10. However, compared with the copper layer 200 shown in FIG. 1, the copper layer 300 is not formed with a lower porosity than the contact layers 130, 140, but with an identical porosity compared with the contact layers 130, 140.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to a method for producing at least one electrically conductive conductor track (200), in which the at least one conductor track is produced in a porous manner by thermal spraying. The electronic module is produced by means of such a method.

Description

Beschreibung description
VERFAHREN ZUR FERTIGUNG EINER LEITERBAHN MITTELS THERMISCHEN SPRÜHENS, ZUR FERTIGUNG EINES ELEKTRONIKMODULS UND ELEKTRONIKMODUL METHOD FOR MANUFACTURING A CONDUCTOR BY THERMAL SPRAYING, FOR MANUFACTURING AN ELECTRONIC MODULE AND ELECTRONIC MODULE
Die Erfindung betrifft ein Verfahren zur Fertigung einer Lei terbahn, ein Verfahren zur Fertigung eines Elektronikmoduls sowie ein Elektronikmodul. The invention relates to a method for manufacturing a Lei terbahn, a method for manufacturing an electronic module and an electronic module.
Elektronikmodule mit Halbleiterbauteilen können mit einer Electronic modules with semiconductor components can with a
Aufbau- und Verbindungstechnik hergestellt werden, welche Construction and connection technology are produced, which
Halbleiterbauteile der Elektronikmodule mit planaren Leiter bahnen elektrisch kontaktieren. Solche Leiterbahnen können Electrically contact semiconductor components of the electronic modules with planar conductor tracks. Such conductor tracks can
etwa mittels thermischen Sprühens gebildet werden. Insbeson dere Leistungshalbleiter in Leistungsmodulen lassen sich vor teilhaft mit planaren Leiterbahnen kontaktieren. be formed by means of thermal spraying. In particular, power semiconductors in power modules can be advantageously contacted with planar conductor tracks.
Jedoch unterliegen planare elektrische Anbindungen von Lei However, lei are subject to planar electrical connections
terbahnen an Halbleiterbauteilen Spannungen, welche von Tem peraturschwankungen und unterschiedlichen Temperaturausdeh terbahnen on semiconductor components tensions caused by tem perature fluctuations and different temperature expansion
nungskoeffizienten von Halbleitermaterial und Leiterbahnen voltage coefficients of semiconductor material and conductor tracks
herrühren. Aufgrund der unterschiedlichen Temperaturausdeh originate. Due to the different temperature expansion
nungskoeffizienten und der resultierenden mechanischen Span nungen können nachteilig Delaminationen an Oberflächen von Tension coefficients and the resulting mechanical stresses can have a detrimental effect on surfaces of delamination
Halbleiterbauteilen auftreten. Semiconductor components occur.
Es ist daher Aufgabe der Erfindung, ein verbessertes Verfah ren zur Fertigung von Leiterbahnen anzugeben, mittels wel It is therefore an object of the invention to provide an improved procedural Ren for the production of conductor tracks by means of wel
chem, insbesondere lastwechselfest, elektrisch kontaktiert chem, especially resistant to load changes, electrically contacted
werden kann. Zudem soll ein Verfahren zur Fertigung eines can be. In addition, a method for manufacturing a
verbesserten und insbesondere lastwechselfesten Elektronikmo duls angegeben werden. Ferner ist es Aufgabe der Erfindung, ein verbessertes Elektronikmodul anzugeben, welches insbeson dere eine hohe Lastwechselfestigkeit aufweist. improved and especially load-change-resistant electronic module can be specified. A further object of the invention is to specify an improved electronic module which, in particular, has a high load cycle resistance.
Diese Aufgabe der Erfindung wird mit einem Verfahren mit den in Anspruch 1 angegebenen Merkmalen sowie mit einem Verfahren mit den in Anspruch 8 angegebenen Merkmalen sowie mit einem Elektronikmodul mit den in Anspruch 9 angegebenen Merkmalen gelöst. Bevorzugte Weiterbildungen der Erfindung sind in den zugehörigen Unteransprüchen, der nachfolgenden Beschreibung und der Zeichnung angegeben. This object of the invention is achieved with a method with the features specified in claim 1 and with a method with the features specified in claim 8 and with a Electronic module solved with the features specified in claim 9. Preferred developments of the invention are given in the associated subclaims, the following description and the drawing.
Bei dem erfindungsgemäßen Verfahren zur Fertigung mindestens einer elektrisch leitfähigen Leiterbahn wird die mindestens eine Leiterbahn mittels thermischen Sprühens porös gebildet. In the method according to the invention for producing at least one electrically conductive conductor track, the at least one conductor track is made porous by means of thermal spraying.
Unter einer porös gebildeten Leiterbahn ist eine Leiterbahn zu verstehen, bei welcher ein Volumenanteil von zumindest 5 Prozent, vorzugsweise ein Volumenanteil von zumindest 20 Pro zent, zweckmäßig von zumindest 40 Prozent und idealerweise von zumindest 50 Prozent, kupferfrei ist. A porous conductor track is understood to mean a conductor track in which a volume fraction of at least 5 percent, preferably a volume fraction of at least 20 percent, expediently of at least 40 percent and ideally of at least 50 percent, is free of copper.
Mittels gezielten thermischen Sprühens einer porösen Leiter bahn weist die Leiterbahn elastische Eigenschaften auf. Daher fungiert eine derartig gefertigte Leiterbahn als Federele ment, welches Kräfte aufgrund von thermischer Ausdehnung und daraus resultierenden Materialspannungen leicht aufnehmen kann. Die Leiterbahn kann somit thermisch bedingte, d.h. By means of targeted thermal spraying of a porous conductor track, the conductor track has elastic properties. A conductor track manufactured in this way therefore functions as a spring element, which can easily absorb forces due to thermal expansion and the resulting material stresses. The conductor track can thus be thermally caused, i.e.
lastbedingte, mechanische Kräfte auf mit der Leiterbahn kon taktierte weitere Bauteile, wie etwa Halbleiterbauteile, re duzieren oder kompensieren. Folglich können eine Leiterbahn und somit auch Vorrichtungen, welche mindestens eine Leiter bahn aufweisen, besonders lastwechselfest ausgebildet werden. Load-related, mechanical forces on other components that are in contact with the conductor track, such as semiconductor components, reduce or compensate. Consequently, a conductor track and thus also devices which have at least one conductor track can be designed to be particularly resistant to load changes.
Vorteilhaft erfordert ein mittels der porös thermisch ge sprühten Leiterbahn realisiertes Federelement zum elektri schen Kontakt keine Ausgleichselemente, mittels welchen eine Dicke der Leiterbahn eingestellt werden kann. Denn mittels thermischen Sprühens kann die Dicke einer erfindungsgemäß ge fertigten Leiterbahn über die Prozessparameter beim thermi schen Sprühen äußerst präzise eingestellt werden. Advantageously, a spring element for electrical contact implemented by means of the porous thermally sprayed conductor track does not require any compensating elements by means of which a thickness of the conductor track can be adjusted. Because by means of thermal spraying, the thickness of a conductor track produced according to the invention can be set extremely precisely via the process parameters during thermal spraying.
Vorteilhaft kann die Porosität der Leiterbahn in Auftrags richtung leicht infolge der Prozessparameter beim thermischen Sprühen eingestellt und insbesondere variiert werden. Zweck- mäßig wird mittels des thermischen Sprühens die Leiterbahn lagenweise aufgetragen, sodass die Prozessparameter insbeson dere lagenweise verändert werden können. Somit ist die Poro sität in Richtung senkrecht zu den flächigen Erstreckungen der Lagen präzise einstellbar. Advantageously, the porosity of the conductor track in the application direction can easily be adjusted and in particular varied as a result of the process parameters during thermal spraying. Purpose- The conductor track is applied layer by layer by means of thermal spraying, so that the process parameters can be changed in particular layer by layer. The porosity can thus be precisely adjusted in the direction perpendicular to the flat extensions of the layers.
Vorteilhaft lässt sich mittels des erfindungsgemäßen Verfah rens eine elektrische Kontaktierung von Leiterbahnen druck kräftefrei realisieren, da eine mechanische Einspannung oder Kraftbeaufschlagung von mit der Leiterbahn kontaktierten Bau teilen nicht erforderlich ist. Vielmehr können mechanische Spannungen beim thermischen Sprühen leicht vermieden werden oder entstehende mechanische Spannungen leicht abgebaut wer den . By means of the method according to the invention, electrical contacting of conductor tracks can advantageously be realized without pressure, since mechanical clamping or application of force to components that are in contact with the conductor track is not required. Rather, mechanical stresses can easily be avoided during thermal spraying or any mechanical stresses that arise can be easily reduced.
Bei dem Verfahren gemäß der Erfindung wird vorzugsweise an einem Kontakt, insbesondere einem Halbleiterkontakt, die Lei terbahn mittels thermischen Sprühens porös gebildet, während die Leiterbahn fern dem Kontakt weniger, vorzugweise nicht, porös gebildet wird als an dem Kontakt. In the method according to the invention, the conductor track is preferably formed porously on a contact, in particular a semiconductor contact, by means of thermal spraying, while the conductor track away from the contact is less, preferably not, porous than on the contact.
Mittels der Prozessparameter lässt sich beim thermischen Sprühen die Porosität gerade an dem Kontakt besonders hoch einstellen, sodass die Federwirkung an dem Kontakt und somit die Lastwechselfestigkeit an dem Kontakt besonders groß aus gestaltet ist. By means of the process parameters, the porosity at the contact can be set particularly high during thermal spraying, so that the spring effect on the contact and thus the load cycle strength on the contact is designed to be particularly high.
Bei einer vorteilhaften Weiterbildung des erfindungsgemäßen Verfahrens wird die mindestens eine Leiterbahn an dem Kontakt in Gestalt eines flächigen Kontakts gebildet und die Leiter bahn wird in Richtung senkrecht zu einer oder mehreren flä chigen Erstreckungen des flächigen Kontakts fern dem Kontakt weniger porös gebildet als an dem Kontakt. In an advantageous development of the method according to the invention, the at least one conductor track is formed on the contact in the form of a flat contact and the conductor track is formed less porous than on the contact in the direction perpendicular to one or more flat extensions of the flat contact away from the contact.
In dieser Weiterbildung der Erfindung kann die Porosität an dem flächigen Kontakt besonders groß ausgebildet sein, wobei aufgrund des flächigen Kontakts die elektrische Leitfähigkeit auch bei hoher Porosität hinreichend groß gewählt werden kann. In Richtung senkrecht zu einer oder mehreren flächigen Erstreckungen des flächigen Kontakts vom Kontakt entfernt hingegen kann Leiterbahn mit geringerer Porosität ausgebildet werden, sodass die Leiterbahn mit einer hohen Stromtragfähig keit in Richtung einer oder mehrerer Erstreckungsrichtungen des flächigen Kontakts ausgebildet werden kann. Die unter schiedliche Porosität lässt sich beim thermischen Sprühen der Leiterbahn etwa mittels mehrerer Überfahrten in Richtung ei ner oder mehrerer Erstreckungen des flächigen Kontakts errei chen . In this further development of the invention, the porosity at the flat contact can be made particularly large, with the electrical conductivity being selected to be sufficiently high even with high porosity due to the flat contact can. In the direction perpendicular to one or more planar extensions of the planar contact away from the contact, however, conductor track can be formed with lower porosity, so that the conductor track can be formed with a high current-carrying capacity in the direction of one or more extension directions of the planar contact. The different porosities can be achieved during thermal spraying of the conductor track by means of several passes in the direction of one or more extensions of the flat contact.
Insbesondere wird bei dem Verfahren gemäß der Erfindung die Leiterbahn mit Metall, insbesondere Kupfer, und/oder Me talloxid, insbesondere Kupferoxid, gebildet. In particular, in the method according to the invention, the conductor track is formed with metal, in particular copper, and / or metal oxide, in particular copper oxide.
Mittels thermischen Sprühens lassen sich im Falle von Metall, insbesondere Kupfer, gezielt oxidische Phasen einbauen, etwa mittels Sprühens unter sauerstoffreicher Atmosphäre, sodass sich mittels thermischen Sprühens eine Leiterbahn mit der Funktionalität eines Federelements leicht ausbilden lässt. By means of thermal spraying, in the case of metal, in particular copper, oxidic phases can be specifically incorporated, for example by means of spraying in an oxygen-rich atmosphere, so that a conductor track with the functionality of a spring element can easily be formed by means of thermal spraying.
Vorteilhaft wird bei dem erfindungsgemäßen Verfahren die Lei terbahn mit mindestens einem elektrisch leitfähigen Material, insbesondere einem Metall und/oder einem Halbleiter und/oder einer Metall-Keramikverbindung und/oder einem in einen elektrisch leitfähigen Zustand versetzbaren Material gebil det. Insbesondere lässt sich die Leiterbahn mit einem Materi al ausbilden, welches mittels eines nachfolgenden Behand lungsschritts, etwa mittels Wärme oder Bestrahlung mit Licht, zweckmäßig UV-Licht, elektrisch leitfähig wird. In the method according to the invention, the conductor track is advantageously formed with at least one electrically conductive material, in particular a metal and / or a semiconductor and / or a metal-ceramic compound and / or a material that can be brought into an electrically conductive state. In particular, the conductor track can be formed with a material which becomes electrically conductive by means of a subsequent treatment step, for example by means of heat or irradiation with light, expediently UV light.
Bei einer bevorzugten Weiterbildung des erfindungsgemäßen Verfahrens ist das elektrisch leitfähige Material mit Kupfer und/oder Gold und/oder Aluminium und/oder Silber und/oder Ni ckel und/oder Zinn und/oder einer Legierung mit einem oder mehreren der vorgenannten Metalle gebildet. Geeignet erfolgt bei dem Verfahren gemäß der Erfindung das thermische Sprühen mittels Zerstäubens aus einer Schmelze, insbesondere Schmelzbadspritzens, und/oder mittels einer elektrischen Lichtbogen- und/oder Gasentladung, insbesondere Lichtbogenspritzens und/oder Plasmaspritzens, und/oder mit tels einer Gasexpansion ohne Verbrennung, insbesondere Kalt gasspritzens , und/oder mittels Verbrennung, insbesondere Drahtflammspritzens und/oder Pulverflammspritzens und/oder Hochgeschwindigkeitsflammspritzens und/oder Detonationssprit- zens, und/oder mittels eines gebündelten energetischen In a preferred development of the method according to the invention, the electrically conductive material is formed with copper and / or gold and / or aluminum and / or silver and / or nickel and / or tin and / or an alloy with one or more of the aforementioned metals. In the method according to the invention, thermal spraying is suitably carried out by means of atomization from a melt, in particular molten bath spraying, and / or by means of an electric arc and / or gas discharge, in particular arc spraying and / or plasma spraying, and / or by means of gas expansion without combustion, in particular cold gas spraying and / or by means of combustion, in particular wire flame spraying and / or powder flame spraying and / or high-speed flame spraying and / or detonation spraying, and / or by means of a bundled energetic
Strahls, insbesondere Laserspritzens . Beam, especially laser spraying.
Bei dem erfindungsgemäßen Verfahren zur Fertigung eines In the inventive method for manufacturing a
Elektronikmoduls wird mindestens eine Leiterbahn des Elektro nikmoduls mittels eines erfindungsgemäßen Verfahrens zur Fer tigung mindestens einer elektrisch leitfähigen Leiterbahn wie zuvor beschrieben gefertigt. Insbesondere bei der Fertigung von Elektronikmodulen lässt sich das erfindungsgemäße Verfah ren zur Fertigung mindesten einer elektrisch leitfähigen Lei terbahn vorteilhaft zur Steigerung der Lastwechselfestigkeit einsetzen . Electronics module, at least one conductor track of the electronics module is manufactured by means of a method according to the invention for manufacturing at least one electrically conductive conductor track as described above. In the manufacture of electronic modules in particular, the method according to the invention can advantageously be used to manufacture at least one electrically conductive conductor track in order to increase the load cycle strength.
Das erfindungsgemäße Elektronikmodul ist mittels eines Ver fahrens zur Fertigung eines Elektronikmoduls wie zuvor be schrieben und/oder mittels eines Verfahrens zur Fertigung mindestens einer elektrisch leitfähigen Leiterbahn wie zuvor beschrieben gefertigt. The electronic module according to the invention is manufactured by means of a method for manufacturing an electronic module as described above and / or by means of a method for manufacturing at least one electrically conductive conductor track as described above.
In einer bevorzugten Weiterbildung des erfindungsgemäßen Elektronikmoduls ist dieses Elektronikmodul ein Leistungsmo dul. Insbesondere bei Leistungsmodulen ist eine hohe Last wechselfestigkeit vorteilhaft. In a preferred development of the electronic module according to the invention, this electronic module is a power module. In the case of power modules in particular, a high level of load alternation is advantageous.
Das erfindungsgemäße Elektronikmodul weist bevorzugt ein Leistungsbauteil, insbesondere Halbleiterbauteil, auf, wel ches mittels der mindestens einen Leiterbahn kontaktiert ist. Nachfolgend wird die Erfindung anhand in der Zeichnung darge stellter Ausführungsbeispiele näher erläutert. Es zeigen: The electronic module according to the invention preferably has a power component, in particular a semiconductor component, which is contacted by means of the at least one conductor track. The invention is explained in more detail with reference to the drawing Darge presented embodiments. Show it:
Fig. 1 ein erfindungsgemäß hergestelltes erfindungsgemäßes 1 shows an according to the invention produced according to the invention
Elektronikmodul schematisch im Querschnitt sowie Electronic module schematically in cross section as well
Fig. 2 ein erfindungsgemäß hergestelltes erfindungsgemäßes 2 shows an inventive produced according to the invention
Elektronikmodul in einem zweiten Ausführungsbei spiel schematisch im Querschnitt. Electronics module in a second Ausführungsbei play schematically in cross section.
Das in Fig. 1 dargestellte erfindungsgemäße Elektronikmodul ist ein Leistungsmodul 10 und ist wie folgt gefertigt: The electronic module according to the invention shown in FIG. 1 is a power module 10 and is manufactured as follows:
Zunächst wird in ein DCB-Substrat (DCB = engl, „direct bonded copper") 20 herangezogen, welches in an sich bekannter Weise eine Keramikplatte 30 mit zwei einander abgewandten Flachsei ten 40, 50 aufweist, die jeweils mit einer Kupferschicht 60, 70 beschichtet sind. Die Kupferschicht 70 an einer der Flach seiten 50 der Keramikplatte 30 ist strukturiert ausgebildet und trägt über Lötverbindungen 80 flächig angebundene Halb leiterbauteile 90, 100. Die Halbleiterbauteile 90, 100, in den in der Zeichnung dargestellten Ausführungsbeispielen Si lizium-Chips, weisen parallel zur Flachseite 50 der Keramik platte 30 verlaufende Flächenkontakte 110, 120 auf, welche der Flachseite 50 der Keramikplatte 30 abgewandt sind. An den Flächenkontakten 110, 120 ist jeweils eine poröse Kontakt schicht 130, 140 angebunden. Die Kontaktschicht 130, 140 wird mittels thermischen Metallsprühens an die Flächenkontakte 110, 120 flächig in der Gestalt einer ebenen Kontaktschicht 130, 140 abgeschieden. First, a DCB substrate (DCB = direct bonded copper) 20 is used which, in a manner known per se, has a ceramic plate 30 with two flat sides 40, 50 facing away from one another, each coated with a copper layer 60, 70 The copper layer 70 on one of the flat sides 50 of the ceramic plate 30 is structured and carries surface-connected semiconductor components 90, 100 via soldered connections 80. The semiconductor components 90, 100, in the exemplary embodiments shown in the drawing, silicon chips point parallel Surface contacts 110, 120 running to the flat side 50 of the ceramic plate 30, which face away from the flat side 50 of the ceramic plate 30. A porous contact layer 130, 140 is attached to each of the surface contacts 110, 120. The contact layer 130, 140 is formed by means of thermal metal spraying deposited flatly on the surface contacts 110, 120 in the form of a flat contact layer 130, 140.
Im dargestellten Ausführungsbeispiel ist die Kontaktschicht 130, 140 jeweils mittels thermischen Metallsprühens von Kup ferpartikeln von mehreren 10 Mikrometern Durchmesser, hier etwa 20 Mikrometern Durchmesser, gebildet. Dabei ist die Kon taktschicht 130, 140 jeweils derart porös, dass ein Volumen anteil von zumindest 5 Prozent, vorzugsweise ein Volumenan teil von zumindest 20 Prozent, idealerweise von zumindest 40 Prozent, der Kontaktschicht 130, 140 kupferfrei ist. Grund sätzlich können in weiteren, nicht eigens dargestellten Aus führungsbeispielen geringere Volumenanteile, etwa weniger als 5 Prozent, etwa 2 Prozent, oder aber höhere Volumenanteile, beispielsweise zumindest 50 Prozent, kupferfrei bleiben. In the illustrated embodiment, the contact layer 130, 140 is each formed by means of thermal metal spraying of copper particles of several 10 micrometers in diameter, here about 20 micrometers in diameter. The contact layer 130, 140 is each porous in such a way that a volume fraction of at least 5 percent, preferably a volume fraction of at least 20 percent, ideally at least 40 percent Percent, the contact layer 130, 140 is free of copper. Basically, in other exemplary embodiments that are not specifically shown, lower volume fractions, for example less than 5 percent, about 2 percent, or higher volume fractions, for example at least 50 percent, can remain copper-free.
Die Kontaktschichten 130, 140 weisen jeweils eine von der Flachseite 50 der Keramikplatte 30 abgewandte Oberfläche in Gestalt jeweils einer Flachseite 150, 160 auf, welche von der Flachseite 50 der Keramikplatte 30 um einen identischen Ab stand beabstandet sind. The contact layers 130, 140 each have a surface facing away from the flat side 50 of the ceramic plate 30, each in the form of a flat side 150, 160, which are spaced from the flat side 50 of the ceramic plate 30 by an identical distance.
Das Leistungsmodul 10 ist im freibleibenden Bereich zwischen Keramikplatte 30 und den Flachseiten 150, 160 der Kontakt schichten 130, 140 mit einem Isolationsmaterial 170 gefüllt. Das Isolationsmaterial 170 ist im dargestellten Ausführungs beispiel ein Polymer in Form eines Thermoplasts , kann aber in weiteren, nicht eigens dargestellten Ausführungsbeispielen auch ein Duroplast oder ein sonstiges Isolationsmaterial sein . The power module 10 is layers 130, 140 filled with an insulation material 170 in the area that remains between the ceramic plate 30 and the flat sides 150, 160 of the contact. In the embodiment shown, the insulation material 170 is, for example, a polymer in the form of a thermoplastic, but in further exemplary embodiments not specifically shown, it can also be a thermoset or some other insulation material.
Das Isolationsmaterial 170 wird dabei derart zwischen der Ke ramikplatte 30 und den Flachseiten 150, 160 der Kontakt schichten 130, 140 eingebracht, dass das Isolationsmaterial an dessen von der Flachseite 50 der Keramikplatte 30 abge wandten Seite eben und bündig mit den Flachseiten 150, 160 der Kontaktschichten 130, 140 in einer Oberfläche 180 ab schließt . The insulation material 170 is so placed between the ceramic plate 30 and the flat sides 150, 160 of the contact layers 130, 140 that the insulation material on its side facing away from the flat side 50 of the ceramic plate 30 is flat and flush with the flat sides 150, 160 of the Contact layers 130, 140 in a surface 180 closes.
Die Oberfläche 180 ist folglich im dargestellten Ausführungs beispiel als im Übrigen thermoplastische Oberfläche 180 aus gebildet, welche bereichsweise Flächenkontakte aufweist, wel che durch die Flachseiten 150, 160 der Kontaktschichten 130, 140 gebildet sind. In the illustrated embodiment, the surface 180 is consequently formed, for example, as an otherwise thermoplastic surface 180, which has surface contacts in certain areas which are formed by the flat sides 150, 160 of the contact layers 130, 140.
An diese Flachseiten 150, 160 und der Oberfläche 180 wird nunmehr erfindungsgemäß eine planare Leiterbahn in der Art einer ebenen, flächigen Kupferschicht 200, welche die Flach- seiten 150, 160 miteinander leitend verbindet, abgeschieden. Die Kupferschicht 200 wird mittels thermischen Metallsprü hens, im dargestellten Ausführungsbeispiel Kupferpartikel mit einem Durchmesser von 20 Mikrometern, auf der Oberfläche 180 abgeschieden. Dazu werden die Parameter beim thermischen Me tallsprühen derart gegenüber den thermischen Metallsprühen der Kontaktschichten 130, 140 geändert, dass die Kupfer schicht 200 kompakt, d.h. mit einer geringeren oder einer verschwindenden Porosität vergleichen mit jener der Kontakt- schichten 130, 140, an der Oberfläche 180 abgeschieden wird. According to the invention, a planar conductor track in the manner of a flat, two-dimensional copper layer 200, which covers the flat surfaces, is now attached to these flat sides 150, 160 and surface 180. sides 150, 160 conductively connects to one another, deposited. The copper layer 200 is deposited on the surface 180 by means of thermal metal spraying, in the exemplary embodiment shown, copper particles with a diameter of 20 micrometers. For this purpose, the parameters during thermal metal spraying are changed compared to thermal metal spraying of the contact layers 130, 140 that the copper layer 200 is compact, ie with a lower or zero porosity compared with that of the contact layers 130, 140 on the surface 180 is deposited.
Das erfindungsgemäße Leistungsmodul 210 gern. Fig. 2 wird im Übrigen gleichartig dem Leistungsmodul 10 hergestellt. Aller dings ist die Kupferschicht 300 gegenüber der in Fig. 1 dar- gestellten Kupferschicht 200 nicht mit geringerer Porosität als die Kontaktschichten 130, 140 ausgebildet, sondern mit einer identischen Porosität verglichen mit den Kontaktschich- ten 130, 140. The power module 210 according to the invention like. FIG. 2 is otherwise produced in the same way as the power module 10. However, compared with the copper layer 200 shown in FIG. 1, the copper layer 300 is not formed with a lower porosity than the contact layers 130, 140, but with an identical porosity compared with the contact layers 130, 140.

Claims

Patentansprüche Claims
1. Verfahren zur Fertigung mindestens einer elektrisch leit fähigen Leiterbahn (200), bei welchem die mindestens eine Leiterbahn mittels thermischen Sprühens porös gebildet wird. 1. A method for producing at least one electrically conductive conductor track (200), in which the at least one conductor track is formed porous by means of thermal spraying.
2. Verfahren nach Anspruch 1, bei welchem zumindest an einem Kontakt (110, 120), insbesondere einem Halbleiterkontakt, die Leiterbahn (200) mittels thermischen Sprühens porös gebildet wird, während die Leiterbahn (200) fern dem Kontakt (110,2. The method according to claim 1, in which at least one contact (110, 120), in particular a semiconductor contact, the conductor track (200) is formed porous by means of thermal spraying, while the conductor track (200) remote from the contact (110,
120) weniger, vorzugweise nicht, porös gebildet wird als an dem Kontakt (110, 120) . 120) is formed less, preferably not, porous than on the contact (110, 120).
3. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem die Leiterbahn (200) an dem Kontakt (110, 120) in Ge stalt eines flächigen Kontakts (110, 120) gebildet wird und die Leiterbahn (200) in Richtung senkrecht zu einer oder meh reren flächigen Erstreckungen des flächigen Kontakts (110,3. The method according to any one of the preceding claims, in which the conductor track (200) is formed on the contact (110, 120) in the form of a flat contact (110, 120) and the conductor track (200) in the direction perpendicular to one or more rere flat extensions of the flat contact (110,
120) fern dem Kontakt (110, 120) weniger porös gebildet wird als an dem Kontakt (110, 120) . 120) is formed less porous away from the contact (110, 120) than at the contact (110, 120).
4. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem die Leiterbahn (200) mit Metall, insbesondere Kupfer, und/oder Metalloxid, insbesondere Kupferoxid, gebildet wird. 4. The method according to any one of the preceding claims, in which the conductor track (200) is formed with metal, in particular copper, and / or metal oxide, in particular copper oxide.
5. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem die Leiterbahn (200) mit mindestens einem elektrisch leitfähigen Material, insbesondere einem Metall und/oder ei nem Halbleiter und/oder einer Metall-Keramikverbindung und/oder einem in einen elektrisch leitfähigen Zustand ver setzbaren Material gebildet wird. 5. The method according to any one of the preceding claims, wherein the conductor track (200) with at least one electrically conductive material, in particular a metal and / or egg nem semiconductor and / or a metal-ceramic compound and / or a ver settable in an electrically conductive state Material is formed.
6. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das elektrisch leitfähige Material mit Kupfer 6. The method according to any one of the preceding claims, wherein the electrically conductive material with copper
und/oder Gold und/oder Aluminium und/oder Silber und/oder Ni ckel und/oder Zinn und/oder einer Legierung mit einem oder mehreren der vorgenannten Metalle gebildet ist. and / or gold and / or aluminum and / or silver and / or nickel and / or tin and / or an alloy with one or more of the aforementioned metals.
7. Verfahren nach einem der vorhergehenden Ansprüche, bei welchem das thermische Sprühen mittels Zerstäubens aus einer Schmelze, insbesondere Schmelzbadspritzens, und/oder mittels einer elektrischen Lichtbogen- und/oder Gasentladung, insbe- sondere Lichtbogenspritzens und/oder Plasmaspritzens, und/oder mittels einer Gasexpansion ohne Verbrennung, insbe sondere Kaltgasspritzens , und/oder mittels Verbrennung, ins besondere Drahtflammspritzens und/oder Pulvertlammspritzens und/oder Hochgeschwindigkeitsflammspritzens und/oder Detona- tionsspritzens , und/oder mittels eines gebündelten energeti schen Strahls, insbesondere Laserspritzens , erfolgt. 7. The method according to any one of the preceding claims, in which the thermal spraying by means of atomization from a melt, in particular melt bath spraying, and / or by means of an electric arc and / or gas discharge, in particular arc spraying and / or plasma spraying, and / or by means of a Gas expansion without combustion, in particular cold gas spraying, and / or by means of combustion, in particular wire flame spraying and / or powder flame spraying and / or high-speed flame spraying and / or detonation spraying, and / or by means of a bundled energetic beam, in particular laser spraying.
8. Verfahren zur Fertigung eines Elektronikmoduls (10, 210), bei welchem mindestens eine Leiterbahn (200) des Elektronik- moduls (10, 210) mittels eines Verfahrens nach einem der vor hergehenden Ansprüche gefertigt wird. 8. A method for manufacturing an electronic module (10, 210), in which at least one conductor track (200) of the electronic module (10, 210) is manufactured by means of a method according to one of the preceding claims.
9. Elektronikmodul nach einem der vorhergehenden Ansprüche, welches mittels eines Verfahrens nach einem der Ansprüche 1 bis 8 gefertigt ist. 9. Electronic module according to one of the preceding claims, which is manufactured by means of a method according to one of claims 1 to 8.
10. Elektronikmodul nach einem der vorhergehenden Ansprüche, welches ein Leistungsmodul (10, 210) ist. 10. Electronic module according to one of the preceding claims, which is a power module (10, 210).
11. Elektronikmodul nach einem der vorhergehenden Ansprüche mit mindestens einem Leistungsbauteil (90, 100), insbesondere Halbleiterbauteil, welches mittels der mindestens einen Lei terbahn (200) kontaktiert ist. 11. Electronic module according to one of the preceding claims with at least one power component (90, 100), in particular semiconductor component, which is contacted by means of the at least one Lei terbahn (200).
PCT/EP2020/070762 2019-07-30 2020-07-23 Method for producing a conductor track by thermal spraying, method for producing an electronic module, and electronic module WO2021018714A1 (en)

Applications Claiming Priority (2)

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