WO2021002717A1 - Combined silicone ring for semiconductor etching apparatus - Google Patents

Combined silicone ring for semiconductor etching apparatus Download PDF

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Publication number
WO2021002717A1
WO2021002717A1 PCT/KR2020/008701 KR2020008701W WO2021002717A1 WO 2021002717 A1 WO2021002717 A1 WO 2021002717A1 KR 2020008701 W KR2020008701 W KR 2020008701W WO 2021002717 A1 WO2021002717 A1 WO 2021002717A1
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Prior art keywords
ring
silicon
coupling
silicone
silicon ring
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PCT/KR2020/008701
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French (fr)
Korean (ko)
Inventor
박진경
Original Assignee
주식회사 테크놀로지메이컬스
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Publication of WO2021002717A1 publication Critical patent/WO2021002717A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention relates to a bonded silicon ring of a semiconductor etching apparatus, and more particularly, a bonded type of a semiconductor etching apparatus that can be used by replacing only parts that are actually consumed by separating and assembling the silicon ring upward, downward, and externally. It relates to a silicone ring.
  • semiconductor devices are fabricated by forming a semiconductor thin film, a conductive thin film, or an insulating thin film on a semiconductor substrate (ie, a silicon wafer), and etching a part of them.
  • a semiconductor substrate ie, a silicon wafer
  • a reactive gas is supplied to a plasma etching chamber, and a high frequency power is applied to the chamber to cause the reactive gas to become an excited plasma state.
  • the uniformity of plasma distribution on the wafer was improved by placing a circular ring at the edge of the wafer.
  • the plasma uniformity on the upper side of the wafer could be improved by expanding the plasma to the outside of the wafer.
  • a silicon disc cut through a wire sawing process is prepared.
  • a silicon ring body is formed by performing a coring process of forming a through hole in the silicon disk.
  • the cored silicone ring body forms a silicone ring by processing the inner and outer diameters using a grinding machine or MCT. Then, to planarize the surface of the silicon ring, the surface and the back surface of the silicon ring are ground using a rotary grinder.
  • the polishing after grinding is single-leaf single-sided polishing using a wax process, the flatness of the surface of the silicone ring is poor, and productivity is lowered.
  • the surface of the silicon ring is uneven, there is a problem that it acts as a particle source that generates more particles than the wafer during the etching process.
  • the production cost is high because the kerf loss is greater than 1 mm.
  • the conventional focus ring needs to be replaced periodically so that process defects do not occur due to etching of a predetermined area, and thus, there is a problem in that the manufacturing cost increases due to increased consumption of parts.
  • the present invention has been conceived to solve the above problems, and its purpose is to separate the silicon ring into a plurality of upper and lower parts and assemble it detachably with a tap-type coupling ring on the outside, so that it is convenient to manufacture and consume a lot of actual consumption. It is to provide a bonded silicon ring of a semiconductor etching device that can maximize product quality and work efficiency by reducing parts cost and minimizing product defects because only parts can be replaced.
  • the combined silicon ring of the semiconductor etching apparatus includes a first silicon ring placed on a connection line with an upper chuck, and a gap fitting ring disposed below the first silicon ring.
  • the second silicon ring is disposed to be spaced apart from each other by a predetermined interval and has a plurality of slots formed to induce the flow of gas, and the first silicon ring and the second silicon ring are provided outside the first silicon ring and the second silicon ring.
  • the first silicon ring may be made of silicon (Si) or silicon carbide (SiC), and upper and lower surfaces thereof may be formed in a straight shape.
  • the first fastening portion includes a first outer tab formed around an outer surface of the first silicone ring, and a first outer tab formed around an upper circumference of the inner surface of the coupling ring to couple the first silicon ring and the coupling ring. It may include a first inner tab to be coupled.
  • the second fastening portion includes a second outer tab formed around an outer surface of the second silicone ring, and a second outer tab formed around a lower circumference of the inner surface of the coupling ring to couple the second silicone ring and the coupling ring. It may include a second inner tab to be coupled.
  • It may further include a step portion formed on the first silicon ring and the coupling ring so as to stably adhere to the first silicon ring and the coupling ring when the first silicon ring and the coupling ring are assembled.
  • the stepped portion may include a lower step formed on an outer lower side of the first silicon ring, and an upper step formed on an inner upper side of the coupling ring and caught by the lower stepped step.
  • the coupling ring may further include a gap fitting ring to match the gap between the first silicone ring and the second silicone ring.
  • the coupling ring and the second silicon ring may further include a locking portion so that the gap fitting ring can be caught.
  • the locking portion includes a locking jaw formed on the inner upper part of the coupling ring to allow the upper end of the gap fitting ring to be caught, and a mounting jaw formed on the outer upper side of the second silicone ring so that the lower end of the gap matching ring can be seated.
  • the bonded silicon ring of the semiconductor etching apparatus is manufactured by separating the bonded silicon ring into a first silicon ring and a second silicon ring up and down, and the first silicon ring and the second silicon ring are separated.
  • FIG. 1 is an exploded perspective view showing a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
  • FIG. 2 is an exploded perspective view showing a cut-away state of a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
  • FIG. 3 is a combined perspective view showing a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
  • FIG. 4 is a combined perspective view showing a cut-away state of the bonded silicon ring of the semiconductor etching apparatus according to the present invention.
  • FIG. 5 is a cross-sectional view showing a state before bonding of the bonded silicon ring of the semiconductor etching apparatus according to the present invention.
  • FIG. 6 is a cross-sectional view showing a bonded state of a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
  • bonded silicone ring 110 first silicone ring
  • first fastening part 201 first outer tab
  • first inner tab 210 second fastening portion
  • the expression'and/or' is used to include at least one of the elements listed before and after.
  • the expression'connected/combined' is used as a meaning including direct connection with other components or indirect connection through other components.
  • the singular form also includes the plural form unless specifically stated in the phrase.
  • components, steps, actions and elements referred to as'comprising' or'comprising' as used in the specification means the presence or addition of one or more other elements, steps, actions and elements.
  • each layer (film), region, pattern, or structure is “on” or “under” of the substrate, each side (film), region, pad or patterns.
  • FIG. 1 is an exploded perspective view showing a bonded silicon ring of a semiconductor etching apparatus according to the present invention
  • FIG. 2 is an exploded perspective view showing a cut-away state of the bonded silicon ring of a semiconductor etching apparatus according to the present invention
  • FIG. 4 is a combined perspective view showing a cut-away state of the bonded silicon ring of the semiconductor etching apparatus according to the present invention
  • FIG. Fig. 6 is a cross-sectional view showing the bonded silicon ring of the semiconductor etching apparatus according to the present invention before bonding
  • FIG. 6 is a cutaway view showing the bonded silicon ring of the semiconductor etching apparatus according to the present invention.
  • the bonded silicon ring 100 of the semiconductor etching apparatus includes a first silicon ring 110, a second silicon ring 120, and a bonding ring 130. And, a first fastening part 200 and a second fastening part 300 are included.
  • the first silicon ring 110 is placed on a connection line with an upper chuck (not shown) of a semiconductor etching apparatus.
  • the first silicon ring 110 can be processed stably and conveniently by using a processing machine (not shown) in a state in which the disk-shaped workpiece is fixed.
  • the upper and lower surfaces of the first silicon ring 110 may be processed into a straight shape.
  • first silicon ring 110 may be made of silicon (Si) or silicon carbide (SiC).
  • the second silicon ring 120 is processed separately from the first silicon ring 110.
  • a plurality of slots 121 are formed in the second silicon ring 120 to induce a flow of gas.
  • the second silicon ring 120 may be made of silicon (Si) or silicon carbide (SiC).
  • the coupling ring 130 may be provided outside the first silicon ring 110 and the second silicon ring 120 to connect the first silicon ring 110 and the second silicon ring 120.
  • the coupling ring 130 may be formed of at least one of silicon (Si), silicon carbide (SiC), boron carbide (B4C), silica (SiO2), aluminum oxide (AL2O3), and alumina.
  • the first fastening part 200 may be provided on the first silicone ring 110 and the coupling ring 130 to separate the first silicone ring 110 and the coupling ring 130.
  • the first fastening part 200 couples the coupling ring 130 to the outside of the first silicon ring 110, but makes the outer and the inside of the first silicon ring 110 and the coupling ring 130 firmly You can make it close.
  • the first fastening part 200 includes a first outer tab 201 and a first inner tab 202.
  • the first outer tab 201 is formed around the outer surface of the first silicon ring 110.
  • first outer tab 201 has a threaded thread so that the first silicon ring 110 and the coupling ring 130 can be screwed together, but preferably may be formed of a male thread.
  • the first inner tab 202 is formed around an upper circumference of the inner surface of the coupling ring 130 to be coupled to the first outer tab 201 so as to be coupled to the first silicon ring 110.
  • first inner tab 202 is coupled to the first outer tab 201 to form a thread so that the first silicon ring 110 and the coupling ring 130 can be coupled, but preferably formed of a female thread. Can be.
  • first outer tab 201 and the first inner tab 202 may be formed of a male thread and a female thread to be coupled to each other by a screw method.
  • the second fastening part 210 may be provided on the second silicone ring 120 and the coupling ring 130 to detachably couple the second silicone ring 120 and the coupling ring 130.
  • the second fastening part 210 includes a second outer tab 211 and a second inner tab 212.
  • the second outer tab 211 is formed around the outer surface of the second silicon ring 120.
  • the second outer tab 211 is formed with a thread so that the second silicon ring 120 and the coupling ring 130 can be screwed together, but preferably may be formed of a male thread.
  • the second inner tab 212 is formed around a lower circumference of the inner surface of the coupling ring 130 and is coupled to the second outer tab 211 so as to be coupled to the second silicon ring 120.
  • the second inner tab 212 is coupled to the second outer tab 211 to form a thread so that the second silicone ring 120 and the coupling ring 130 can be coupled, but preferably formed of a female thread. Can be.
  • the second outer tab 211 and the second inner tab 212 may be formed of a male thread and a female thread to each other, and may be coupled by a screw method.
  • the stepped portion 300 may be formed to be able to be formed.
  • the stepped portion 300 includes a lower stepped 301 and an upper stepped 302.
  • the lower stepped 301 is formed on the lower outside of the first silicon ring 110.
  • the upper stepped 302 is formed on the inner upper portion of the coupling ring 130 so that the lower stepped 301 is caught and brought into close contact.
  • the lower stepped 301 and the upper stepped 302 are in close contact with each other.
  • a contact portion between the 110 and the coupling ring 130 may be firmly adhered to each other without generating a gap.
  • a gap fitting ring 140 may be provided that is in close contact with the inner surface of the coupling ring 130 so as to match the gap between the first and second silicone rings 110 and 120.
  • first silicon ring 110 coupled to the coupling ring 130 by providing a spacing ring 140 in the coupling ring 130 between the first silicone ring 110 and the second silicone ring 120 ) And the second silicon ring 120 may be coupled at a predetermined interval.
  • a locking part 310 may be formed between the coupling ring 130 and the second silicon ring 120 so that the gap fitting ring 140 may be caught.
  • the locking part 310 includes a locking projection 311 and a seating projection 312.
  • the locking protrusion 311 is formed on the inner upper portion of the coupling ring 130 so that the upper end of the gap fitting ring 140 that is in close contact with the inner portion of the coupling ring 130 is caught.
  • the seating protrusion 312 is formed on the outer upper part of the second silicon ring 120 and the lower end of the gap fitting ring 140 that is in close contact with the inside of the coupling ring 130 is caught.
  • the space fitting ring 140 when the space fitting ring 140 is in close contact with the inner surface of the coupling ring 130, the upper and lower portions of the space fitting ring 140 are respectively caught by the locking projections 311 and the mounting projections 312, and the coupling Since the second silicon ring 120 coupled to the lower inner side of the ring 130 does not move upward, the distance between the first silicon ring 110 and the first silicon ring 110 may be maintained.
  • the coupling ring 130 is detachably coupled to the first silicon ring 110 and the second silicon ring 120 processed by being separated from each other into the first fastening part 200 and the second fastening part 210 can do.
  • first fastening part 200 and the second fastening part 210 are fastened with a tab, but preferably, various fastening methods such as a bolt fastening method and a fitting fastening method may be applied.
  • a state of operation according to the bonded silicon ring of the semiconductor etching apparatus of the present invention made as described above is as follows.
  • the combined silicon ring 100 is not processed using a single processed product, but is divided into a plurality of the first silicon ring 110 and the second silicon ring 120 and processed separately, so that the first and second silicon rings.
  • the accessibility of the machine that processes (110, 120) is good, so the processing is convenient, minimizing the processing man-hour and processing time.
  • the coupling ring 130 is attached to the outside of the first silicon ring 110 and the second silicon ring 120.
  • the coupling ring 130 and the first silicon ring 110 are detachably connected to the first coupling part 200, and the coupling ring 130 and the second silicon ring 120 are connected to the second coupling part ( 210) by attaching and detaching the first silicon ring 110 and the second silicon ring 120, the first silicon ring without the need to replace the whole of the bonded silicon ring 100 when an error occurs in any one of the components
  • the 110 and the second silicone ring 120 By separating the 110 and the second silicone ring 120 from each other, only the corresponding part can be replaced.
  • the stepped portion 300 formed on the first silicon ring 110 and the coupling ring 130 As a result, the first silicon ring 110 is not moved upward, so that the first silicon ring 110 and the coupling ring 130 may be firmly connected.
  • the gap fitting ring 140 is in close contact with the inner surface of the coupling ring 130, and the locking part By 310, the gap fitting ring 140 is caught by the coupling ring 130 and the second silicon ring 120 so that the second silicon ring 120 may be firmly connected.
  • the replacement cost can be reduced by changing the replacement cycle.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Drying Of Semiconductors (AREA)

Abstract

The present invention relates to a combined silicone ring for a semiconductor etching apparatus, wherein the silicone ring is separated and assembled vertically and outwardly, thus making it possible to replace only those components that are actually worn down. The combined silicone ring is characterized by comprising: a first silicone ring positioned on a line connected with an upper chuck; a second silicone ring which is in close contact with a lower portion of the first silicone ring, and in which a plurality of slots are formed to guide the flow of gas; a combining ring provided outside the first silicone ring and the second silicone ring to connect the first silicone ring and the second silicone ring; first fastening parts provided in the first silicone ring and the combining ring to fasten the combining ring to the first silicone ring; and second fastening parts provided in the second silicone ring and the combining ring to fasten the combining ring to the second silicone ring.

Description

반도체 식각장치의 결합형 실리콘 링Bonded silicon ring of semiconductor etching device
본 발명은 반도체 식각장치의 결합형 실리콘 링에 관한 것으로서, 보다 상세하게는 실리콘 링을 상,하 및 외부로 분리하고 조립하게 되어 실제 소모가 되는 부품만 교체하여 사용할 수 있는 반도체 식각장치의 결합형 실리콘 링에 관한 것이다.The present invention relates to a bonded silicon ring of a semiconductor etching apparatus, and more particularly, a bonded type of a semiconductor etching apparatus that can be used by replacing only parts that are actually consumed by separating and assembling the silicon ring upward, downward, and externally. It relates to a silicone ring.
일반적으로 반도체 소자는 반도체 기판(즉, 실리콘 웨이퍼)상에 반도체성 박막, 도전성 박막 또는 절연성의 박막을 형성하고, 이들의 일부를 식각하여 제작한다.In general, semiconductor devices are fabricated by forming a semiconductor thin film, a conductive thin film, or an insulating thin film on a semiconductor substrate (ie, a silicon wafer), and etching a part of them.
최근 들어, 박막의 형성 공정과 식각 공정시 플라즈마 기술을 이용하여 공정 효율을 증대시키고 있다.Recently, plasma technology has been used to increase process efficiency during thin film formation and etching processes.
식각 공정을 예를 들면, 플라즈마 식각 챔버에 반응 가스를 공급하고, 챔버에 고주파 전원을 인가하여 반응 가스를 여기된 플라즈마 상태가 되도록 한다.In the etching process, for example, a reactive gas is supplied to a plasma etching chamber, and a high frequency power is applied to the chamber to cause the reactive gas to become an excited plasma state.
이와 같이, 반응 가스를 플라즈마화시켜 웨이퍼 상의 박막들과의 반응성을 높일 뿐만 아니라, 플라즈마화된 반응 가스의 물리적인 충돌에 의해 박막이 제거됨으로 인해 박막의 제거 성능을 향상시킬 수 있다.In this way, not only the reactivity with the thin films on the wafer is increased by converting the reactive gas into plasma, but also the removal performance of the thin film can be improved because the thin film is removed by physical collision of the plasmaized reactive gas.
플라즈마 처리 장치의 경우 웨이퍼 상부에 형성되는 플라즈마의 분포가 균일하게 유지되어야 하는 문제가 있다.In the case of the plasma processing apparatus, there is a problem that the distribution of plasma formed on the wafer must be uniformly maintained.
따라서, 웨이퍼의 가장자리 부위에 원형의 링을 배치시켜 웨이퍼 상의 플라즈마 분포의 균일도를 향상시켰다.Therefore, the uniformity of plasma distribution on the wafer was improved by placing a circular ring at the edge of the wafer.
즉, 플라즈마를 웨이퍼의 외측까지 확대시켜 웨이퍼 상측의 플라즈마 균일도를 향상시킬 수 있었다.In other words, the plasma uniformity on the upper side of the wafer could be improved by expanding the plasma to the outside of the wafer.
종래의 실리콘 링의 제조를 간략히 살펴보면 다음과 같다.A brief look at the manufacture of a conventional silicon ring is as follows.
와이어 소잉(sawing) 공정을 통해 절단된 실리콘 원판을 마련한다. 실리콘 원판에 관통홀을 형성하는 코어링 공정을 수행하여 실리콘 링 몸체를 형성한다. 코어링 된 실리콘 링 몸체는 연삭기 또는 MCT를 이용하여 내경 및 외경을 가공하여 실리콘 링을 형성한다. 그리고, 실리콘 링의 표면 평탄화를 위해 로터리 연삭기를 이용하여 실리콘 링의 표면 및 이면을 그라인딩한다.A silicon disc cut through a wire sawing process is prepared. A silicon ring body is formed by performing a coring process of forming a through hole in the silicon disk. The cored silicone ring body forms a silicone ring by processing the inner and outer diameters using a grinding machine or MCT. Then, to planarize the surface of the silicon ring, the surface and the back surface of the silicon ring are ground using a rotary grinder.
그라인딩 후의 폴리싱은 왁스 공정을 사용하는 매엽식 단면 폴리싱이므로 실리콘 링 표면의 평탄도가 나쁘며, 생산성이 저하되는 문제가 발생한다. 또한, 실리콘 링의 표면이 고르지 못하기 때문에 식각 공정시 웨이퍼에 비하여 더 많은 파티클을 생성하게 되는 파티클 소스로 작용하는 문제가 발생한다. 그리고, 상술한 바와 같이 제작된 종래의 실리콘 링의 경우 커프 로스(Kerf Loss)가 1mm 이상으로 많아 생산 원가가 높은 단점이 있다.Since the polishing after grinding is single-leaf single-sided polishing using a wax process, the flatness of the surface of the silicone ring is poor, and productivity is lowered. In addition, since the surface of the silicon ring is uneven, there is a problem that it acts as a particle source that generates more particles than the wafer during the etching process. And, in the case of the conventional silicon ring manufactured as described above, there is a disadvantage that the production cost is high because the kerf loss is greater than 1 mm.
이러한 제조방법으로 실리콘 링을 제조하게 되면 C형태로 가공하기 위해 많은 기계 가공이 필요하고 내부의 제한된 공간으로 인해 그에 따른 전용 공구가 필요하며 가공 시간이 많이 소요되는 문제점이 있었다.When a silicon ring is manufactured by this manufacturing method, a lot of machining is required to process it into a C shape, and due to the limited space inside, a dedicated tool is required and processing time is required.
또한, 슬롯을 가공 시 레이저나 방전 등 고급 장비 및 고도의 기술을 요하고, 슬롯 가공 부분이 공중에 떠 있는 상태로 별도의 고정 수단이 없어 안정적인 고정이 어려워 취성이 강한 실리콘의 경우 슬롯 부분이 쉽게 부서져 가공 수율이 나쁘고 재료 손실이 크게 되는 문제점이 있었다.In addition, advanced equipment such as laser or electric discharge and advanced technology are required when processing slots.Since the slot processing part is floating in the air and there is no separate fixing means, it is difficult to secure stable fixing. There was a problem that the processing yield was bad and the material loss was large due to being broken.
또한, 종래의 포커스 링은 소정 부위에 대한 식각으로 인해 공정불량이 발생되지 않도록 전체를 주기적으로 교체해야 하며, 이에 부품 소모 증가로 제조 단가가 상승하는 문제점이 있었다.In addition, the conventional focus ring needs to be replaced periodically so that process defects do not occur due to etching of a predetermined area, and thus, there is a problem in that the manufacturing cost increases due to increased consumption of parts.
따라서, 본 발명은 상기한 문제점을 해결하기 위하여 안출한 것으로, 그 목적은 실리콘 링을 상,하 복수개로 분리하고 외부에 탭 방식의 결합링으로 탈착 가능하게 조립함으로써 제작이 편리하고 실제 소모가 많은 부품만 교체할 수 있어 부품비를 절감하며 제품 불량을 최소화하여 제품성 및 작업효율을 최대화할 수 있는 반도체 식각장치의 결합형 실리콘 링을 제공함에 있다.Therefore, the present invention has been conceived to solve the above problems, and its purpose is to separate the silicon ring into a plurality of upper and lower parts and assemble it detachably with a tap-type coupling ring on the outside, so that it is convenient to manufacture and consume a lot of actual consumption. It is to provide a bonded silicon ring of a semiconductor etching device that can maximize product quality and work efficiency by reducing parts cost and minimizing product defects because only parts can be replaced.
상기한 목적을 달성하기 위한 본 발명의 실시 예에 따른 반도체 식각장치의 결합형 실리콘 링은 상부 척과 연결 선상에 놓여지는 제1 실리콘 링과, 상기 제1 실리콘 링의 하부에 위치하되, 간격맞춤링에 의해 일정 간격 이격되도록 배치되며, 가스의 흐름을 유도하도록 다수개의 슬롯이 형성되는 제2 실리콘 링과, 상기 제1 실리콘 링과 제2 실리콘 링의 외부에 구비되어 제1 실리콘 링과 제2 실리콘 링을 연결하는 결합링과, 상기 제1 실리콘 링과 결합링에 구비되어 결합링을 제1 실리콘 링에 체결하는 제1체결부와, 상기 제2 실리콘 링과 결합링에 구비되어 결합링을 제2 실리콘 링에 체결하는 제2체결부를 포함할 수 있다.In order to achieve the above object, the combined silicon ring of the semiconductor etching apparatus according to an embodiment of the present invention includes a first silicon ring placed on a connection line with an upper chuck, and a gap fitting ring disposed below the first silicon ring. The second silicon ring is disposed to be spaced apart from each other by a predetermined interval and has a plurality of slots formed to induce the flow of gas, and the first silicon ring and the second silicon ring are provided outside the first silicon ring and the second silicon ring. A coupling ring for connecting a ring, a first coupling portion provided on the first silicone ring and the coupling ring to fasten the coupling ring to the first silicone ring, and a coupling ring provided on the second silicone ring and the coupling ring 2 It may include a second fastening part fastened to the silicone ring.
상기 제1 실리콘 링은 실리콘(Si) 또는 실리콘 카바이드(SiC)로 이루어지며, 상하면이 일자 형태로 이루어질 수 있다.The first silicon ring may be made of silicon (Si) or silicon carbide (SiC), and upper and lower surfaces thereof may be formed in a straight shape.
상기 제1체결부는 제1 실리콘 링의 외측면 둘레에 형성되는 제1외측탭과, 상기 결합링의 내측면 상부 둘레에 형성되어 제1 실리콘 링과 결합링을 결합할 수 있도록 제1외측탭과 결합되는 제1내측탭을 포함할 수 있다.The first fastening portion includes a first outer tab formed around an outer surface of the first silicone ring, and a first outer tab formed around an upper circumference of the inner surface of the coupling ring to couple the first silicon ring and the coupling ring. It may include a first inner tab to be coupled.
상기 제2체결부는 제2 실리콘 링의 외측면 둘레에 형성되는 제2외측탭과, 상기 결합링의 내측면 하부 둘레에 형성되어 제2 실리콘 링과 결합링을 결합할 수 있도록 제2외측탭과 결합되는 제2내측탭을 포함할 수 있다.The second fastening portion includes a second outer tab formed around an outer surface of the second silicone ring, and a second outer tab formed around a lower circumference of the inner surface of the coupling ring to couple the second silicone ring and the coupling ring. It may include a second inner tab to be coupled.
상기 제1 실리콘 링과 결합링에 형성되어 제1 실리콘 링과 결합링이 조립될 때 안정적으로 밀착될 수 있도록 단차부를 더 포함할 수 있다.It may further include a step portion formed on the first silicon ring and the coupling ring so as to stably adhere to the first silicon ring and the coupling ring when the first silicon ring and the coupling ring are assembled.
상기 단차부는 제1 실리콘 링의 외측 하부에 형성되는 하부단턱과, 상기 결합링의 내측 상부에 형성되고 하부단턱에 걸려 밀착되는 상부단턱을 포함할 수 있다.The stepped portion may include a lower step formed on an outer lower side of the first silicon ring, and an upper step formed on an inner upper side of the coupling ring and caught by the lower stepped step.
상기 결합링의 내측면 둘레에 구비되어 제1 실리콘 링과 제2 실리콘 링 사이의 간격을 맞추기 위해 간격맞춤링이 더 포함될 수 있다,It is provided around the inner surface of the coupling ring may further include a gap fitting ring to match the gap between the first silicone ring and the second silicone ring.
상기 결합링과 제2 실리콘 링에 형성되어 간격맞춤링이 걸릴 수 있도록 걸림부를 더 포함할 수 있다.It is formed on the coupling ring and the second silicon ring may further include a locking portion so that the gap fitting ring can be caught.
상기 걸림부는 결합링의 내측 상부에 형성되어 간격맞춤링의 상단이 걸릴 수 있도록 하는 걸림턱과, 상기 제2 실리콘 링의 외측 상부에 형성되어 간격맞춤링의 하단이 안착될 수 있도록 하는 안착턱을 포함할 수 있다.The locking portion includes a locking jaw formed on the inner upper part of the coupling ring to allow the upper end of the gap fitting ring to be caught, and a mounting jaw formed on the outer upper side of the second silicone ring so that the lower end of the gap matching ring can be seated. Can include.
이상에서 설명한 바와 같이, 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링에 의하면, 결합형 실리콘 링을 상,하로 제1 실리콘 링과 제2 실리콘 링으로 분리하여 제조하고 제1 실리콘 링과 제2 실리콘 링의 외부에 탭 방식으로 결합링을 결합하여 제1 실리콘 링과 제2 실리콘 링을 조립함으로써 제작이 용이하고 불량률을 최소화할 수 있으며 실제 소모되는 부품만 교체할 수 있어 부품비를 절감할 수 있는 효과가 있다.As described above, according to the bonded silicon ring of the semiconductor etching apparatus according to the present invention, the bonded silicon ring is manufactured by separating the bonded silicon ring into a first silicon ring and a second silicon ring up and down, and the first silicon ring and the second silicon ring are separated. By assembling the first silicon ring and the second silicon ring by assembling the first silicon ring and the second silicon ring by attaching the bonding ring to the outside of the silicon ring, it is possible to reduce the cost of parts by replacing only the parts actually consumed. It works.
도 1은 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링을 도시한 분해사시도이다.1 is an exploded perspective view showing a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
도 2는 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 절개된 상태를 도시한 분해사시도이다.2 is an exploded perspective view showing a cut-away state of a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
도 3은 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링을 도시한 결합사시도이다.3 is a combined perspective view showing a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
도 4는 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 절개된 상태를 도시한 결합사시도이다.4 is a combined perspective view showing a cut-away state of the bonded silicon ring of the semiconductor etching apparatus according to the present invention.
도 5는 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 결합 전 상태를 도시한 절단면도이다.5 is a cross-sectional view showing a state before bonding of the bonded silicon ring of the semiconductor etching apparatus according to the present invention.
도 6은 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 결합된 상태를 도시한 절단면도이다.6 is a cross-sectional view showing a bonded state of a bonded silicon ring of a semiconductor etching apparatus according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Explanation of symbols for major parts of drawings>
100 : 결합형 실리콘 링 110 : 제1 실리콘 링100: bonded silicone ring 110: first silicone ring
120 : 제2 실리콘 링 121 : 슬롯120: second silicone ring 121: slot
130 : 결합링 140 : 간격맞춤링130: coupling ring 140: gap fitting ring
200 : 제1체결부 201 : 제1외측탭200: first fastening part 201: first outer tab
202 : 제1내측탭 210 : 제2체결부202: first inner tab 210: second fastening portion
211 : 제2외측탭 212 : 제2내측탭211: second outer tab 212: second inner tab
300 : 단차부 301 : 하부단턱300: stepped portion 301: lower stepped
302 : 상부단턱 310 : 걸림부302: upper step 310: locking portion
311 : 걸림턱 312 : 안착턱311: locking jaw 312: mounting jaw
본 발명은 다양한 변경을 가할 수 있고 여러 가지 실시 예를 가질 수 있는바, 특정 실시 예들을 도면에 예시하고 상세한 설명에 상세하게 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다.In the present invention, various modifications may be made and various embodiments may be provided, and specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to a specific embodiment, it is to be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the present invention.
도면들에 있어서, 본 발명의 실시 예들은 도시된 특정 형태로 제한되는 것이 아니며 명확성을 기하기 위하여 과장된 것이다. 본 명세서에서 특정한 용어들이 사용되었으나, 이는 본 발명을 설명하기 위한 목적에서 사용된 것이며, 의미 한정이나 특허청구범위에 기재된 본 발명의 권리 범위를 제한하기 위하여 사용된 것은 아니다.In the drawings, embodiments of the present invention are not limited to the specific form shown, but are exaggerated for clarity. Although specific terms have been used in the present specification, these are used for the purpose of describing the present invention, and are not used to limit the meaning or the scope of the present invention described in the claims.
본 명세서에서 '및/또는'이란 표현은 전후에 나열된 구성요소들 중 적어도 하나를 포함하는 의미로 사용된다. 또한, '연결되는/결합되는'이란 표현은 다른 구성요소와 직접적으로 연결되거나 다른 구성요소를 통해 간접적으로 연결되는 것을 포함하는 의미로 사용된다. 본 명세서에서 단수형은 문구에서 특별히 언급하지 않는 한 복수형도 포함한다. 또한, 명세서에서 사용되는 '포함한다' 또는 '포함하는'으로 언급된 구성요소, 단계, 동작 및 소자는 하나 이상의 다른 구성요소, 단계, 동작 및 소자의 존재 또는 추가를 의미한다.In the present specification, the expression'and/or' is used to include at least one of the elements listed before and after. In addition, the expression'connected/combined' is used as a meaning including direct connection with other components or indirect connection through other components. In the present specification, the singular form also includes the plural form unless specifically stated in the phrase. In addition, components, steps, actions and elements referred to as'comprising' or'comprising' as used in the specification means the presence or addition of one or more other elements, steps, actions and elements.
또한, '제1, 제2' 등과 같은 표현은, 복수의 구성들을 구분하기 위한 용도로만 사용된 표현으로써, 구성들 사이의 순서나 기타 특징들을 한정하지 않는다.In addition, expressions such as'first, second', etc. are used only for distinguishing a plurality of elements, and do not limit the order or other features between the elements.
실시 예들의 설명에 있어서, 각 층(막), 영역, 패턴 또는 구조물들이 기판, 각 측(막), 영역, 패드 또는 패턴들의 "상/위(on)"에 또는 "하/아래(under)"에 형성된다는 기재는, 직접(directly) 또는 다른 층을 개재하여 형성되는 것을 모두 포함한다. 각 층의 상/위 또는 하/아래에 대한 기준은 도면을 기준으로 설명한다.In the description of the embodiments, each layer (film), region, pattern, or structure is "on" or "under" of the substrate, each side (film), region, pad or patterns. The description to be formed in "includes all those formed directly or through other layers. The criteria for the top/top or bottom/bottom of each layer will be described based on the drawings.
이하, 첨부된 도면을 참조하여 본 발명의 일실시 예를 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링을 도시한 분해사시도이며, 도 2는 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 절개된 상태를 도시한 분해사시도이고, 도 3은 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링을 도시한 결합사시도이며, 도 4는 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 절개된 상태를 도시한 결합사시도이고, 도 5는 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 결합 전 상태를 도시한 절단면도이고, 도 6은 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링의 결합된 상태를 도시한 절단면도이다.1 is an exploded perspective view showing a bonded silicon ring of a semiconductor etching apparatus according to the present invention, FIG. 2 is an exploded perspective view showing a cut-away state of the bonded silicon ring of a semiconductor etching apparatus according to the present invention, and FIG. Is a combined perspective view showing a bonded silicon ring of the semiconductor etching apparatus according to the present invention, FIG. 4 is a combined perspective view showing a cut-away state of the bonded silicon ring of the semiconductor etching apparatus according to the present invention, and FIG. Fig. 6 is a cross-sectional view showing the bonded silicon ring of the semiconductor etching apparatus according to the present invention before bonding, and FIG. 6 is a cutaway view showing the bonded silicon ring of the semiconductor etching apparatus according to the present invention.
도 1 내지 도 6에 도시된 바와 같이, 본 발명에 따른 반도체 식각장치의 결합형 실리콘 링(100)은 제1 실리콘 링(110)과, 제2 실리콘 링(120)과, 결합링(130)과, 제1체결부(200)와, 제2체결부(300)를 포함하게 된다.1 to 6, the bonded silicon ring 100 of the semiconductor etching apparatus according to the present invention includes a first silicon ring 110, a second silicon ring 120, and a bonding ring 130. And, a first fastening part 200 and a second fastening part 300 are included.
상기 제1 실리콘 링(110)은 반도체 식각장치의 상부 척(도시하지 않음)과 연결 선상에 놓여지게 된다.The first silicon ring 110 is placed on a connection line with an upper chuck (not shown) of a semiconductor etching apparatus.
또한, 상기 제1 실리콘 링(110)은 원판 형태의 가공물을 고정한 상태에서 가공기(도시하지 않음)를 이용하여 안정적이고 간편하게 가공할 수 있다.In addition, the first silicon ring 110 can be processed stably and conveniently by using a processing machine (not shown) in a state in which the disk-shaped workpiece is fixed.
그리고, 상기 제1 실리콘 링(110)의 상하면은 일자 형태로 가공될 수 있다.In addition, the upper and lower surfaces of the first silicon ring 110 may be processed into a straight shape.
또한, 상기 제1 실리콘 링(110)은 실리콘(Si) 또는 실리콘 카바이드(SiC)로 이루어질 수 있다.In addition, the first silicon ring 110 may be made of silicon (Si) or silicon carbide (SiC).
상기 제2 실리콘 링(120)은 제1 실리콘 링(110)과 별도로 분리하여 가공하게 된다.The second silicon ring 120 is processed separately from the first silicon ring 110.
그리고, 상기 제2 실리콘 링(120)에는 가스의 흐름을 유도할 수 있도록 다수개의 슬롯(121)이 형성되게 된다.In addition, a plurality of slots 121 are formed in the second silicon ring 120 to induce a flow of gas.
상기 제2 실리콘 링(120)은 실리콘(Si) 또는 실리콘 카바이드(SiC)로 이루어질 수 있다.The second silicon ring 120 may be made of silicon (Si) or silicon carbide (SiC).
상기 결합링(130)은 제1 실리콘 링(110)과 제2 실리콘 링(120)의 외부에 구비되어 제1 실리콘 링(110)과 제2 실리콘 링(120)을 연결시킬 수 있다.The coupling ring 130 may be provided outside the first silicon ring 110 and the second silicon ring 120 to connect the first silicon ring 110 and the second silicon ring 120.
상기 결합링(130)은 실리콘(Si), 실리콘 카바이드(SiC), 보론 카바이드(B4C), 실리카(SiO2), 산화알루미늄(AL2O3), 알루미나 중 적어도 어느 하나로 이루어질 수 있다.The coupling ring 130 may be formed of at least one of silicon (Si), silicon carbide (SiC), boron carbide (B4C), silica (SiO2), aluminum oxide (AL2O3), and alumina.
상기 제1체결부(200)는 제1 실리콘 링(110)과 결합링(130)에 구비되어 제1 실리콘 링(110)과 결합링(130)을 분리 가능하게 결합시킬 수 있다.The first fastening part 200 may be provided on the first silicone ring 110 and the coupling ring 130 to separate the first silicone ring 110 and the coupling ring 130.
또한, 상기 제1체결부(200)는 제1 실리콘 링(110)의 외부에 결합링(130)을 결합시키되 상기 제1 실리콘 링(110)과 결합링(130)의 외측과 내측을 견고하게 밀착시킬 수 있다.In addition, the first fastening part 200 couples the coupling ring 130 to the outside of the first silicon ring 110, but makes the outer and the inside of the first silicon ring 110 and the coupling ring 130 firmly You can make it close.
상기 제1체결부(200)는 제1외측탭(201)과, 제1내측탭(202)을 포함하게 된다.The first fastening part 200 includes a first outer tab 201 and a first inner tab 202.
상기 제1외측탭(201)은 제1 실리콘 링(110)의 외측면 둘레에 형성되게 된다.The first outer tab 201 is formed around the outer surface of the first silicon ring 110.
또한, 상기 제1외측탭(201)은 제1 실리콘 링(110)과 결합링(130)이 나사 조립될 수 있도록 나사산이 형성되되 바람직하게는 숫나사산으로 형성될 수 있다.In addition, the first outer tab 201 has a threaded thread so that the first silicon ring 110 and the coupling ring 130 can be screwed together, but preferably may be formed of a male thread.
상기 제1내측탭(202)은 결합링(130)의 내측면 상부 둘레에 형성되어 제1 실리콘 링(110)과 결합될 수 있도록 제1외측탭(201)과 결합되게 된다.The first inner tab 202 is formed around an upper circumference of the inner surface of the coupling ring 130 to be coupled to the first outer tab 201 so as to be coupled to the first silicon ring 110.
또한, 상기 제1내측탭(202)은 제1외측탭(201)과 결합되어 제1 실리콘 링(110)과 결합링(130)이 결합될 수 있도록 나사산이 형성되되 바람직하게는 암나사산으로 형성될 수 있다.In addition, the first inner tab 202 is coupled to the first outer tab 201 to form a thread so that the first silicon ring 110 and the coupling ring 130 can be coupled, but preferably formed of a female thread. Can be.
즉, 상기 제1외측탭(201)과 제1내측탭(202)은 서로 숫나사산과 암나사산으로 형성되어 나사 방식으로 결합될 수 있다.That is, the first outer tab 201 and the first inner tab 202 may be formed of a male thread and a female thread to be coupled to each other by a screw method.
상기 제2체결부(210)는 제2 실리콘 링(120)과 결합링(130)에 구비되어 제2 실리콘 링(120)과 결합링(130)을 분리 가능하게 결합시킬 수 있다.The second fastening part 210 may be provided on the second silicone ring 120 and the coupling ring 130 to detachably couple the second silicone ring 120 and the coupling ring 130.
상기 제2체결부(210)는 제2외측탭(211)과, 제2내측탭(212)을 포함하게 된다.The second fastening part 210 includes a second outer tab 211 and a second inner tab 212.
상기 제2외측탭(211)은 제2 실리콘 링(120)의 외측면 둘레에 형성되게 된다.The second outer tab 211 is formed around the outer surface of the second silicon ring 120.
또한, 상기 제2외측탭(211)은 제2 실리콘 링(120)과 결합링(130)이 나사 조립될 수 있도록 나사산이 형성되되 바람직하게는 숫나사산으로 형성될 수 있다.In addition, the second outer tab 211 is formed with a thread so that the second silicon ring 120 and the coupling ring 130 can be screwed together, but preferably may be formed of a male thread.
상기 제2내측탭(212)은 결합링(130)의 내측면 하부 둘레에 형성되어 제2 실리콘 링(120)과 결합될 수 있도록 제2외측탭(211)과 결합되게 된다.The second inner tab 212 is formed around a lower circumference of the inner surface of the coupling ring 130 and is coupled to the second outer tab 211 so as to be coupled to the second silicon ring 120.
또한, 상기 제2내측탭(212)은 제2외측탭(211)과 결합되어 제2 실리콘 링(120)과 결합링(130)이 결합될 수 있도록 나사산이 형성되되 바람직하게는 암나사산으로 형성될 수 있다.In addition, the second inner tab 212 is coupled to the second outer tab 211 to form a thread so that the second silicone ring 120 and the coupling ring 130 can be coupled, but preferably formed of a female thread. Can be.
즉, 상기 제2외측탭(211)과 제2내측탭(212)은 서로 숫나사산과 암나사산으로 형성되어 나사 방식으로 결합될 수 있다.That is, the second outer tab 211 and the second inner tab 212 may be formed of a male thread and a female thread to each other, and may be coupled by a screw method.
상기 제1 실리콘 링(110)과 결합링(130)에는 제1 실리콘 링(110)과 결합링(130)이 결합될 때 상기 제1 실리콘 링(110)과 결합링(130)이 안정적으로 밀착될 수 있도록 단차부(300)가 형성될 수 있다.When the first silicon ring 110 and the coupling ring 130 are coupled to the first silicon ring 110 and the coupling ring 130, the first silicon ring 110 and the coupling ring 130 are stably adhered to each other. The stepped portion 300 may be formed to be able to be formed.
상기 단차부(300)는 하부단턱(301)과, 상부단턱(302)을 포함하게 된다.The stepped portion 300 includes a lower stepped 301 and an upper stepped 302.
상기 하부단턱(301)은 제1 실리콘 링(110)의 외측 하부에 형성되게 된다.The lower stepped 301 is formed on the lower outside of the first silicon ring 110.
상기 상부단턱(302)은 결합링(130)의 내측 상부에 형성되어 상기 하부단턱(301)이 걸려 밀착되게 된다.The upper stepped 302 is formed on the inner upper portion of the coupling ring 130 so that the lower stepped 301 is caught and brought into close contact.
즉, 상기 제1 실리콘 링(110)과 결합링(130)이 제1체결부(200)로 결합될 때 상기 하부단턱(301)과 상부단턱(302)이 서로 밀착됨에 따라 상기 제1 실리콘 링(110)과 결합링(130)의 접촉 부위가 갭 발생 없이 견고하게 밀착될 수 있다.That is, when the first silicon ring 110 and the coupling ring 130 are coupled to the first fastening part 200, the lower stepped 301 and the upper stepped 302 are in close contact with each other. A contact portion between the 110 and the coupling ring 130 may be firmly adhered to each other without generating a gap.
상기 결합링(130)의 내측면 둘레에 밀착되어 제1 실리콘 링(110)과 제2 실리콘 링(120) 사이의 간격을 맞출 수 있도록 하는 간격맞춤링(140)이 구비될 수 있다.A gap fitting ring 140 may be provided that is in close contact with the inner surface of the coupling ring 130 so as to match the gap between the first and second silicone rings 110 and 120.
즉, 상기 제1 실리콘 링(110)과 제2 실리콘 링(120) 사이의 결합링(130)에 간격맞춤링(140)을 구비함으로써 상기 결합링(130)에 결합되는 제1 실리콘 링(110)과 제2 실리콘 링(120)이 일정 간격을 두고 결합될 수 있다.That is, the first silicon ring 110 coupled to the coupling ring 130 by providing a spacing ring 140 in the coupling ring 130 between the first silicone ring 110 and the second silicone ring 120 ) And the second silicon ring 120 may be coupled at a predetermined interval.
상기 결합링(130)과 제2 실리콘 링(120)에는 간격맞춤링(140)이 걸릴 수 있도록 걸림부(310)가 형성될 수 있다.A locking part 310 may be formed between the coupling ring 130 and the second silicon ring 120 so that the gap fitting ring 140 may be caught.
상기 걸림부(310)는 걸림턱(311)과, 안착턱(312)을 포함하게 된다.The locking part 310 includes a locking projection 311 and a seating projection 312.
상기 걸림턱(311)은 결합링(130)의 내측 상부에 형성되어 결합링(130)의 내부로 밀착되는 간격맞춤링(140)의 상단부가 걸리게 된다.The locking protrusion 311 is formed on the inner upper portion of the coupling ring 130 so that the upper end of the gap fitting ring 140 that is in close contact with the inner portion of the coupling ring 130 is caught.
상기 안착턱(312)은 제2 실리콘 링(120)의 외측 상부에 형성되어 결합링(130)의 내부로 밀착되는 간격맞춤링(140)의 하단부가 걸리게 된다.The seating protrusion 312 is formed on the outer upper part of the second silicon ring 120 and the lower end of the gap fitting ring 140 that is in close contact with the inside of the coupling ring 130 is caught.
즉, 상기 결합링(130)의 내측면에 간격맞춤링(140)이 밀착될 때 상기 간격맞춤링(140)의 상부와 하부가 각각 걸림턱(311)과 안착턱(312)에 걸려 상기 결합링(130)의 내측 하부에 결합되는 제2 실리콘 링(120)이 상방향으로 이동되지 않아 상기 제1 실리콘 링(110)과의 간격을 일정하게 유지할 수 있다.That is, when the space fitting ring 140 is in close contact with the inner surface of the coupling ring 130, the upper and lower portions of the space fitting ring 140 are respectively caught by the locking projections 311 and the mounting projections 312, and the coupling Since the second silicon ring 120 coupled to the lower inner side of the ring 130 does not move upward, the distance between the first silicon ring 110 and the first silicon ring 110 may be maintained.
또한, 상기 결합링(130)은 서로 분리되어 가공된 제1 실리콘 링(110)과 제2 실리콘 링(120)을 제1체결부(200)와 제2체결부(210)로 착탈 가능하게 결합할 수 있다.In addition, the coupling ring 130 is detachably coupled to the first silicon ring 110 and the second silicon ring 120 processed by being separated from each other into the first fastening part 200 and the second fastening part 210 can do.
이때, 상기 제1체결부(200)와 제2체결부(210)는 탭 체결 방식이 적용되나 바람직하게는 볼트 체결 방식, 끼움 체결 방식의 다양한 체결방식을 적용할 수 있다.At this time, the first fastening part 200 and the second fastening part 210 are fastened with a tab, but preferably, various fastening methods such as a bolt fastening method and a fitting fastening method may be applied.
상기와 같이 이루어진 본 발명의 반도체 식각장치의 결합형 실리콘 링에 따른 작용상태를 살펴보면 아래와 같다.A state of operation according to the bonded silicon ring of the semiconductor etching apparatus of the present invention made as described above is as follows.
상기 결합형 실리콘 링(100)을 하나의 가공물을 사용하여 가공하지 않고 상기 제1 실리콘 링(110)과 제2 실리콘 링(120)의 복수개로 나누어 각각 별도로 가공하게 되어 상기 제1,2 실리콘 링(110,120)을 가공하는 가공기의 접근성이 좋아 가공이 편리하여 가공 공수 및 가공 시간을 최소화하게 된다.The combined silicon ring 100 is not processed using a single processed product, but is divided into a plurality of the first silicon ring 110 and the second silicon ring 120 and processed separately, so that the first and second silicon rings. The accessibility of the machine that processes (110, 120) is good, so the processing is convenient, minimizing the processing man-hour and processing time.
그리고, 상기 제1 실리콘 링(110)과 제2 실리콘 링(120)이 분리되어 가공된 상태에서 상기 제1 실리콘 링(110)과 제2 실리콘 링(120)의 외부에 결합링(130)을 구비하여 상기 결합링(130)과 제1 실리콘 링(110)을 제1체결부(200)로 착탈 가능하게 연결하고 상기 결합링(130)과 제2실리콘 링(120)을 제2체결부(210)로 착탈 가능하게 연결함으로써 상기 제1 실리콘 링(110)과 제2 실리콘 링(120) 중 어느 한 부품에 이상 발생시 결합형 실리콘 링(100)의 전체를 교체할 필요없이 상기 제1 실리콘 링(110)과 제2 실리콘 링(120)을 서로 분리하여 해당 부품만 교체할 수 있다.In the state where the first silicon ring 110 and the second silicon ring 120 are separated and processed, the coupling ring 130 is attached to the outside of the first silicon ring 110 and the second silicon ring 120. The coupling ring 130 and the first silicon ring 110 are detachably connected to the first coupling part 200, and the coupling ring 130 and the second silicon ring 120 are connected to the second coupling part ( 210) by attaching and detaching the first silicon ring 110 and the second silicon ring 120, the first silicon ring without the need to replace the whole of the bonded silicon ring 100 when an error occurs in any one of the components By separating the 110 and the second silicone ring 120 from each other, only the corresponding part can be replaced.
또한, 상기 제1 실리콘 링(110)과 결합링(130)이 제1체결부(200)로 연결될 때 상기 제1실리콘 링(110)과 결합링(130)에 형성되는 단차부(300)에 의해 상기 제1 실리콘 링(110)이 상방향으로 이동되지 않아 상기 제1 실리콘 링(110)과 결합링(130)이 견고하게 연결될 수 있다.In addition, when the first silicon ring 110 and the coupling ring 130 are connected to the first coupling portion 200, the stepped portion 300 formed on the first silicon ring 110 and the coupling ring 130 As a result, the first silicon ring 110 is not moved upward, so that the first silicon ring 110 and the coupling ring 130 may be firmly connected.
이와 함께, 상기 제2 실리콘 링(120)이 결합링(130)과 제2체결부(210)로 연결될 때 상기 결합링(130)의 내측면에 간격맞춤링(140)이 밀착되고 상기 걸림부(310)에 의해 상기 간격맞춤링(140)이 결합링(130)과 제2 실리콘 링(120)에 걸려 상기 제2 실리콘 링(120)이 견고하게 연결될 수 있다.In addition, when the second silicon ring 120 is connected to the coupling ring 130 and the second coupling part 210, the gap fitting ring 140 is in close contact with the inner surface of the coupling ring 130, and the locking part By 310, the gap fitting ring 140 is caught by the coupling ring 130 and the second silicon ring 120 so that the second silicon ring 120 may be firmly connected.
이와 같이, 상기 제1 실리콘 링(110)과 제2 실리콘 링(120)을 분리하고 상기 결합링(130)으로 조립함으로써 상기 제1 실리콘 링(110)과 제2 실리콘 링(120) 간에 서로 수명이 달라 교체 주기를 달리하여 교체 비용을 절감할 수 있게 된다.In this way, by separating the first silicon ring 110 and the second silicon ring 120 and assembling the bonding ring 130, the life span between the first silicon ring 110 and the second silicon ring 120 Due to this, the replacement cost can be reduced by changing the replacement cycle.
이상에서 설명한 바와 같이 본 발명은 상술한 특정의 바람직한 실시 예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형실시가 가능한 것은 물론이고, 그와 같은 변경은 청구범위 기재의 범위 내에 있게 된다.As described above, the present invention is not limited to the specific preferred embodiments described above, and any person with ordinary knowledge in the technical field to which the present invention belongs without departing from the gist of the present invention claimed in the claims It goes without saying that modifications are possible, and such modifications are within the scope of the claims.

Claims (6)

  1. 상부 척과 연결 선상에 놓여지는 제1 실리콘 링;A first silicon ring placed on the connection line with the upper chuck;
    상기 제1 실리콘 링의 하부에 위치하되, 간격맞춤링에 의해 일정 간격 이격되도록 배치되며, 가스의 흐름을 유도하도록 다수개의 슬롯이 형성되는 제2 실리콘 링;A second silicon ring positioned below the first silicon ring, disposed to be spaced apart at a predetermined interval by a spacing ring, and having a plurality of slots formed to induce a flow of gas;
    상기 제1 실리콘 링과 제2 실리콘 링의 외부에 구비되어 제1 실리콘 링과 제2 실리콘 링을 연결하는 결합링;A coupling ring provided outside the first silicon ring and the second silicon ring to connect the first silicon ring and the second silicon ring;
    상기 제1 실리콘 링과 결합링에 구비되어 결합링을 제1 실리콘 링에 체결하는 제1체결부; 및A first fastening part provided on the first silicone ring and the bonding ring to fasten the bonding ring to the first silicone ring; And
    상기 제2 실리콘 링과 결합링에 구비되어 결합링을 제2 실리콘 링에 체결하는 제2체결부;를 포함하고,Includes; a second fastening portion provided on the second silicone ring and the coupling ring to fasten the coupling ring to the second silicone ring,
    상기 간격맞춤링은, 결합링의 내측면 둘레에 구비되어 제1 실리콘 링과 제2 실리콘 링 사이의 간격을 일정하게 맞추며,The spacing ring is provided around the inner surface of the coupling ring to uniformly match the distance between the first silicone ring and the second silicone ring,
    상기 결합링과 제2 실리콘 링에 형성되어 간격맞춤링이 걸릴 수 있도록 걸림부를 더 포함하되,It is formed on the coupling ring and the second silicon ring, further comprising a locking portion so that the gap fitting ring can be caught,
    상기 걸림부는, 결합링의 내측 상부에 형성되어 간격맞출림의 상단이 걸릴 수 있도록 하는 걸림턱; 및 상기 제2 실리콘 링의 외측 상부에 형성되어 간격맞춤링의 하단이 안착될 수 있도록 하는 안착턱;을 포함하고,The locking portion is formed on the inner upper portion of the coupling ring to allow the upper end of the gap alignment rim to be caught; And a seating protrusion formed on an outer upper portion of the second silicon ring so that a lower end of the spacing ring can be seated; and
    상기 제1체결부는 단차부를 포함하는 탭 결합 구조인 것을 특징으로 하는, 반도체 식각장치의 결합형 실리콘 링.The bonded silicon ring of a semiconductor etching apparatus, characterized in that the first fastening portion has a tab bonded structure including a stepped portion.
  2. 제 1 항에 있어서,The method of claim 1,
    상기 제1 실리콘 링은 실리콘(Si) 또는 실리콘 카바이드(SiC)로 이루어지며, 상하면이 일자 형태로 이루어지는 것을 특징으로 하는 반도체 식각장치의 결합형 실리콘 링.The first silicon ring is made of silicon (Si) or silicon carbide (SiC), and the upper and lower surfaces thereof are formed in a straight shape.
  3. 제 1 항에 있어서,The method of claim 1,
    상기 제1체결부는, 제1 실리콘 링의 외측면 둘레에 형성되는 제1외측탭; 및 상기 결합링의 내측면 상부 둘레에 형성되어 제1 실리콘 링과 결합링을 결합할 수 있도록 제1외측탭과 결합되는 제1내측탭;을 포함하는 반도체 식각장치의 결합형 실리콘 링.The first fastening portion may include a first outer tab formed around an outer surface of the first silicon ring; And a first inner tab formed around an upper circumference of the inner surface of the coupling ring and coupled to the first outer tab so as to couple the first silicon ring and the coupling ring.
  4. 제 1 항에 있어서,The method of claim 1,
    상기 제2체결부는, 제2 실리콘 링의 외측면 둘레에 형성되는 제2외측탭; 및 상기 결합링의 내측면 하부 둘레에 형성되어 제2 실리콘 링과 결합링을 결합할 수 있도록 제2외측탭과 결합되는 제2내측탭;을 포함하는 반도체 식각장치의 결합형 실리콘 링.The second fastening portion may include a second outer tab formed around an outer surface of the second silicon ring; And a second inner tab formed around a lower circumference of the inner surface of the coupling ring and coupled to the second outer tab so as to couple the second silicon ring and the coupling ring.
  5. 제 1 항에 있어서,The method of claim 1,
    상기 제1 실리콘 링과 결합링에 형성되어 제1 실리콘 링과 결합링이 조립될 때 안정적으로 밀착될 수 있도록 단차부를 더 포함하는 반도체 식각장치의 결합형 실리콘 링.A bonded silicon ring of a semiconductor etching apparatus further comprising a step portion formed on the first silicon ring and the bonding ring to stably adhere to the first silicon ring and the bonding ring when the first silicon ring and the bonding ring are assembled.
  6. 제 5 항에 있어서,The method of claim 5,
    상기 단차부는, 제1 실리콘 링의 외측 하부에 형성되는 하부단턱; 및 상기 결합링의 내측 상부에 형성되고 하부단턱에 걸려 밀착되는 상부단턱;을 포함하는 반도체 식각장치의 결합형 실리콘 링.The stepped portion may include a lower step formed on an outer lower portion of the first silicon ring; And an upper step formed on the inner upper side of the coupling ring and caught by the lower step and adhered to the lower step.
PCT/KR2020/008701 2019-07-03 2020-07-03 Combined silicone ring for semiconductor etching apparatus WO2021002717A1 (en)

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KR102549935B1 (en) * 2021-04-28 2023-06-30 주식회사 월덱스 Multi-body limited ring for plasma etching equipment
KR102326741B1 (en) 2021-08-18 2021-11-16 주식회사 린텍 Bonding Method of Silicon Parts Using Silcon Power and High-frequency Heating Device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08102460A (en) * 1994-04-05 1996-04-16 Applied Materials Inc Improvement focus ring for semiconductor wafer processing inplasma reactor
JP3091372U (en) * 2002-07-11 2003-01-24 水源 陳 Structure of stereotactic ring used for polishing silicon wafer
KR20060035158A (en) * 2004-10-21 2006-04-26 삼성전자주식회사 Focus ring of semiconductor etching apparatus
KR20180049208A (en) * 2009-08-31 2018-05-10 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
KR20180003064U (en) * 2017-04-14 2018-10-24 주식회사 월덱스 Transferring limited ring for plasma etching equipment
KR102102132B1 (en) * 2019-07-03 2020-04-20 주식회사 테크놀로지메이컬스 Combined silicon ring for semiconductor etching apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100858441B1 (en) 2007-02-22 2008-09-12 하나실리콘(주) Method for manufacturing silicon ring
KR101998202B1 (en) * 2019-04-01 2019-07-10 (주)원세미콘 Plasma focus ring for semiconductor etching apparatus and manufacturing method of the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08102460A (en) * 1994-04-05 1996-04-16 Applied Materials Inc Improvement focus ring for semiconductor wafer processing inplasma reactor
JP3091372U (en) * 2002-07-11 2003-01-24 水源 陳 Structure of stereotactic ring used for polishing silicon wafer
KR20060035158A (en) * 2004-10-21 2006-04-26 삼성전자주식회사 Focus ring of semiconductor etching apparatus
KR20180049208A (en) * 2009-08-31 2018-05-10 램 리써치 코포레이션 Radio frequency (rf) ground return arrangements
KR20180003064U (en) * 2017-04-14 2018-10-24 주식회사 월덱스 Transferring limited ring for plasma etching equipment
KR102102132B1 (en) * 2019-07-03 2020-04-20 주식회사 테크놀로지메이컬스 Combined silicon ring for semiconductor etching apparatus

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