WO2020254270A1 - Apparatus and method for determining and adjusting the inclined position of a susceptor - Google Patents

Apparatus and method for determining and adjusting the inclined position of a susceptor Download PDF

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Publication number
WO2020254270A1
WO2020254270A1 PCT/EP2020/066535 EP2020066535W WO2020254270A1 WO 2020254270 A1 WO2020254270 A1 WO 2020254270A1 EP 2020066535 W EP2020066535 W EP 2020066535W WO 2020254270 A1 WO2020254270 A1 WO 2020254270A1
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WO
WIPO (PCT)
Prior art keywords
susceptor
rotation
process chamber
broad side
sensor arrangement
Prior art date
Application number
PCT/EP2020/066535
Other languages
German (de)
French (fr)
Inventor
Benjamin David Wright
Barry O'NEIL
Ben Russell VAN WELL
Marcel Kollberg
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Priority to CN202080044240.5A priority Critical patent/CN113994026A/en
Publication of WO2020254270A1 publication Critical patent/WO2020254270A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

  • the invention relates to a device and a method for determining and compensating for a vertical run of a susceptor which is driven to rotate about an axis of rotation when it is used in a process chamber of a substrate treatment reactor under substrate treatment conditions at an elevated temperature achieved by heating the susceptor with a heating device.
  • a stationary in a housing of the substrate treatment reactor arranged sensor arrangement for determining at least one component of the distance to the susceptor that is parallel to the axis of rotation, adjustment elements being provided to adjust an inclination position of a Breitsei surface of the susceptor.
  • US 2009/0276097 A1 describes a substrate treatment device in which the inclination of a susceptor is to be determined with an optical sensor. While the susceptor is rotating, the position of the susceptor is to be adjusted. The optical sensor is outside the process chamber. The light beam goes through a quartz dome.
  • US 2016/0010239 A1 describes a substrate treatment reactor with a susceptor which has the shape of a circular disk and can be driven in rotation by a drive shaft around the axis of the drive shaft. Means are provided for adjusting the shaft.
  • US Pat. No. 6,737,663 B2 discloses a device for measuring an angle of inclination of a flat surface of a machine with respect to a reference surface, a laser beam being generated by a laser and received by an optical receiver. The laser beam is reflected on the surface whose inclination is to be determined.
  • US Pat. No. 6,788,991 B2 discloses a device for determining the exact position of a substrate in a substrate treatment device.
  • a substrate treatment reactor in which a susceptor can be driven in rotation about an axis of rotation.
  • the position of the susceptor in the center of a process chamber of a substrate treatment reactor can be adjusted by means of probe arms.
  • DE 20 2018 100 363.1 discloses a support head which can be placed on a shaft that can be rotated.
  • the support head carries a Tragplat te, which in turn carries a susceptor.
  • the support plate can be inclined relative to a flange with which the head is attached to the shaft.
  • the invention is based on the object of specifying means with which a broad side surface of a susceptor can be brought into a plane of rotation, where a process chamber with a non-transparent process chamber ceiling is arranged above the susceptor.
  • the substrate treatment reactor is brought to a substrate treatment temperature by heating the susceptor with a heating device.
  • At least one sensor arrangement with a sensor is provided, which is fixedly connected to the housing of the substrate treatment reactor.
  • this sensor arrangement is able to determine a distance between itself and a Breitumbleflä surface of the susceptor.
  • the sensor arrangement is able to determine a vector component of the distance that runs parallel to the axis of rotation.
  • the distance is to be determined under the process treatment conditions, that is to say at the process temperatures that are above 500 ° C.
  • the distance is determined continuously while the susceptor is rotating about its axis of rotation.
  • the reflected light signal is received by a light sensor.
  • the distance that the light travels from the light transmitter to the light sensor can be determined in a known manner by measuring the transit time or determining the phase position.
  • the point of reflection of the light or the point of impact of the laser beam on the broad side of the susceptor is preferably at a maximum distance from the axis of rotation of the susceptor in the radial direction. According to a variant of the invention it is provided that a large number of measurements are made during one revolution of the susceptor, so that a large number of measurement points are determined.
  • the measured distance values of a susceptor having a vertical run show a sinusoidal profile. Correction values can be determined from this course of the distance values in order to use adjusting elements to determine the broad side area on which the measurement was made or one of them deviates. corresponding broadside surface, the relative inclination of which is known to the broadside surface on which the measurements have been made, to bring into a plane of rotation.
  • the invention relates in particular to a device which has a heating device with which the susceptor can be heated on its side facing away from the process chamber. It is preferably provided that the broad side of the susceptor facing the process chamber is to be brought into a plane of rotation by adjusting adjustment elements.
  • the process chamber is seated in particular by a stationary process chamber cover that does not rotate and that has been brought into a plane parallel to the plane of rotation by means of other adjustment elements. If the broadside surface of the susceptor facing the process chamber is brought into the plane of rotation, it runs parallel to the underside of the process chamber ceiling. This leads to the aim of the invention that the process chamber height, that is to say the distance between the broad side surface of the susceptor pointing upward and the broad side surface of the process chamber ceiling pointing downward, is the same throughout the entire process chamber.
  • the process chamber preferably has a gas inlet element through which process gases can be fed into the process chamber.
  • the process gases can be organometallic compounds of III. or IV. main group of the periodic table.
  • hydrides of III are used as process gases. or IV. main group into consideration, so that IV-IV semiconductor layers or III-V semiconductor layers can be deposited on substrates that rest on the broad side surface of the susceptor facing the process chamber.
  • the broad side surface of the susceptor facing the process chamber has pockets in each of which there is a substrate carrier which carries one or more substrates.
  • the substrate carriers can be mounted in a known manner on gas cushions, the gas cushions being generated by gas flows which also give the substrate carrier a rotation about its axis.
  • the gas supply to the gas cushions occurs through a shaft with which the susceptor is driven in rotation.
  • the away from the process chamber de broadside surface of the susceptor is heated with a heating device.
  • the heating device can be an IR heating device, RF heating device or another energy source with which heating power is supplied to the susceptor in order to bring the susceptor to a process temperature.
  • the measuring section between the sensor arrangement and the broad side surface of the susceptor runs through the heating device.
  • the sensor arrangement is an optical sensor arrangement and the light beam runs through a heating coil of the heating element.
  • the heating coil can be realized by an RF antenna.
  • the heating coil can be formed by a hollow body through the cavity of which a cooling medium flows.
  • the adjustment of the inclination takes place at room temperature, for example by using adjustment tools that engage threaded elements.
  • the threaded elements can be formed from screws, for example, which can be turned by screwdrivers or their screwing tools. As DE 20 2018 100 363.1 shows, these screws can be actuated through a central opening in the susceptor.
  • the disclosure content of DE 20 2018 100 363.1 is therefore fully included in the disclosure content of this application, in particular with the purpose of including features disclosed there in the claims.
  • the inclination can be adjusted at an elevated temperature.
  • the adjustment elements which can also have threaded elements, can be actuated from outside the reactor housing.
  • actuators can also be provided, for example electric servomotors with which the adjusting elements can be operated in order to adjust the angle of inclination by an electric motor.
  • the servomotors can be permanently connected to the shaft with which the susceptor is driven in rotation.
  • threaded spindles can be rotated, each of which has an external thread, the external thread in each case in a spindle nut engages, which sits on an adjustment head that carries the susceptor.
  • the device preferably has a control device in the form of a controller which receives distance data from the sensor arrangement.
  • the control system can receive information about the angle of rotation of the susceptor from the rotary drive with which the shaft is rotated.
  • the control can calculate correction data with which the adjusting elements must be adjusted by means of the actuators or in some other way in order to bring the broad side surface of the susceptor into the plane of rotation. Even if the distance measurements are made on a lower broad side surface of the susceptor that faces away from the process chamber, the broad side surface is preferably placed in the plane of rotation that points towards the process chamber. During the correction, deviations from the parallelism of the two broad side surfaces can be taken into account.
  • the height of the process chamber is preferably a maximum of 40 mm.
  • the process chamber height is preferably in the range between 20 and 25 mm, where the diameter of the susceptor is at least 600 mm. The diameter can be between 500 and 700 mm.
  • the heating device is preferably formed by a spiral body, in particular a spiral antenna.
  • the antenna can generate an electromagnetic alternating field that generates eddy currents in the electrically conductive suscepter, which heat the susceptor to at least 500 ° C.
  • a light generator which is arranged on the bottom of the reactor housing, generates a beam of light that passes through the heating device and in particular through the intermediate space between two spiral windings to the bottom of the susceptor. There the light beam is reflected back diffusely. The reflected light passes through the same or another space between two spiral windings to a light sensor.
  • FIG. 1 shows a cross section through a substrate treatment reactor to illustrate the essential elements of the invention.
  • Figure 1 shows a reactor housing 1, which is a gas-tight stainless steel housing. Inside the housing there is a susceptor 3, which can be a circular disk-shaped graph part, ceramic part or metal part. The susceptor 3 forms with a broad side surface 3 ′′ a lower boundary surface of a process chamber 2 which is bounded at the top by an underside 14 ′ of a cover plate 14.
  • the cover plate 14 can consist of graphite, a ceramic material or the like and can be position-adjusted
  • the cover plate 14 is preferably position-adjusted in such a way that its underside 14 runs perpendicular to an axis of rotation 5.
  • the cover plate 14 is assigned to the housing in a stationary manner.
  • a gas inlet element 17 with a plurality of gas supply lines in order to be able to feed different process gases into the process chamber 2 together with a carrier gas.
  • the process chamber ceiling 14 can be carried by the gas inlet element 17.
  • a lower section of the gas inlet element 17 can lie in a recess in the susceptor 3.
  • the susceptor 3 is carried by a support head 22 which is located in the axis of rotation 5. With the interposition of an elastic seal 23, the support head 22 rests on a shaft 18 which can be rotatably driven by a rotary drive 19 mounted in a rotary bearing 21.
  • the shaft 18 run in the figure only indicated gas lines, which run through the seal 23 and the support head 22 through into the susceptor 3, where they open into pockets in which there are substrate carriers 15, each one or several substrates 16 carry. Carrier gas flows can be passed through these gas feed lines, which drive the substrate carriers 15 to rotate about their axis in a known manner.
  • the broad side surface 3 ′′ of the susceptor 3 facing the process chamber 2 is opposite a broad side surface 3 ′, which points to a heating device 4.
  • the heating device 4 is formed by a spiral antenna that generates an electromagnetic alternating field which is electrically conductive susceptor 3 generates eddy currents with which the susceptor is heated.
  • a housing-fixed sensor arrangement 8, 9 is provided.
  • the sensor arrangement 8, 9 is connected to the bottom of the Reaktorgepur ses 1.
  • the rotary bearing 21 or the rotary drive 19 is also connected to the reactor housing 1, so that the axis of rotation 5, about which the shaft 18 or the susceptor 3 can be driven in rotation, runs fixed to the housing.
  • a distance a between the broad side surface 3 ′ and the sensor arrangement 8, 9 can be measured. This is preferably done while the susceptor 3 is rotating about the axis of rotation 5.
  • the measured values obtained by the sensor arrangement 8, 9 are stored in a controller 10.
  • the controller 10 receives, for example, angle information from the rotary drive 19 about the rotational position of the susceptor 3, so that an inclination position 11 is obtained by evaluating this data the broad side surface 3 'of the susceptor 3 can be determined.
  • the elements of the sensor arrangement 8, 9 are firmly connected to the underside of the housing 1, so that the distance a is a distance from a radially outer region of the underside 3 'of the susceptor 3 to the housing. If the susceptor 3 has a vertical stroke, when the susceptor 3 is rotated, the distance a changes periodically.
  • the two surfaces 3 ′′ and 14 ′ should run parallel to one another.
  • the inclination of the broad side surface 3 ′′ relative to the underside 14 'of the ceiling plate 14 can thus be determined.
  • Adjusting members 6, 7 are provided with which the inclination position 11 can be adjusted.
  • the adjusting elements 6, 7 can be those that can only be actuated when the reactor housing 1 is open, for example adjusting elements as disclosed in DE 20 2018 100 363.1.
  • the inclination position 11 can be adjusted not only in the cooled state of the susceptor 3 but also under substrate treatment conditions.
  • actuators 12 which can be operated by an electric motor, are provided, which are arranged in an adjustment drive housing 20 which is firmly connected to the shaft 18, that is to say can rotate with the shaft 18.
  • the actuators 12 can drive a threaded spindle del 6 having an external thread, wherein the actuators 12 can be stepper motors with Small angle adjustments are also possible.
  • the support head has spin delmuttern 7, with internal threads into which the external threads of the threaded spindles 6 engage. The inclination position 11 can thus be adjusted by adjusting the angle of rotation of the threaded spindles 6.
  • the sensor arrangement 8, 9 preferably has a light transmitter 8, which can preferably be a laser.
  • the laser generates a laser beam that runs along a measuring section 13 to the broad side surface 3 ′′ of the susceptor 3. A light beam reflected therefrom reaches a light sensor 9, so that the distance a can be determined with the light transmitter 8 and the light sensor 9.
  • the light transmitter 8 generates a light beam which is directed towards the broad side surface 3 ', where it impinges in the radially outer area of the susceptor 3. It generates a light-emitting area and the light emitted from this area reaches the light sensor 9.
  • light emitters 8 and light sensor 9 is shown as being spaced apart from one another
  • light transmitter 8 and light sensor 9 are formed by a common housing so that the light beam emitted by the light transmitter essentially coincides with the light beam received by light sensor 9.
  • a device which is characterized in that the measuring section 13 of the sensor arrangement 8, 9 runs through the heating device 4.
  • a device which is characterized in that the sensor arrangement 8, 9 has an optical sensor 9 and in particular measures the distance from a broad side of the susceptor 3 to the sensor arrangement 8, 9 facing the heating device 4.
  • a device which is characterized in that the Verstellor gane 6, 7 have threaded elements.
  • a device which is characterized in that the adjusting elements 6, 7 can be adjusted by motor-driven actuators 12 under substrate treatment conditions.
  • a device characterized by a control device 10, which supplies correction values from the distance values determined by the sensor, with which the inclination position 11 of the susceptor 3 is changed manually or dynamically during a substrate treatment.
  • a method which is characterized in that at least three
  • Rotational positions of the susceptor 3 distance values are determined, which are used as support points for calculating a sine function with which the correction values are calculated in order to minimize the angle of inclination of a broadside surface of the susceptor 3 facing the process chamber 2 to a plane of rotation of the susceptor 3.
  • a device which is characterized in that the broad side surface 3 'of the susceptor 3 facing the process chamber 2 lies opposite a process chamber cover which extends parallel to the plane of rotation and which extends from the broad side surface 3', 3 "of the susceptor 3 at most 40 mm away. All the features disclosed are essential to the invention (individually, but also in combination with one another).
  • the disclosure of the application hereby also fully includes the disclosure content of the associated / attached priority documents (copy of the prior application) for the purpose of including features of these documents in claims of the present message to be included.
  • the subclaims characterize, even without the features of a referenced claim, with their features independent inventive developments of the prior art, in particular in order to make divisional applications on the basis of these claims.
  • each claim can additionally have one or more of the features provided in the above description, in particular provided with reference numbers and / or specified in the list of reference numbers.
  • the invention also relates to design forms in which some of the features mentioned in the above description are not implemented, in particular if they are recognizable for the respective purpose or can be replaced by other technically equivalent means.

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Abstract

The invention relates to a method for balancing a radial run-out of a susceptor (3), which is rotatingly driven about a rotation axis (5) during use thereof in a process chamber (2) of a substrate treatment reactor under substrate treatment conditions at an increased temperature achieved by heating the susceptor (3) by means of a heating device (4), having a sensor arrangement, fixedly arranged in a housing (1) of the substrate treatment reactor, for determining at least one component of the distance to the susceptor (3), which component is parallel to the rotation axis (5), wherein adjusting elements (6, 7) are provided in order to adjust an inclined position (11) of a broad-side surface (3") of the susceptor (3) relative to the rotation axis. According to the invention, the distance is determined under process treatment conditions, that is, in particular at temperatures over 500 °C. In the device used for this purpose, the measuring section (13) of the sensor arrangement (8, 9) extends through a heating device (4).

Description

Beschreibung description
Vorrichtung und Verfahren zum Bestimmen und Einstellen der Neigungslage eines Suszeptors Device and method for determining and setting the inclination position of a susceptor
Gebiet der Technik Field of technology
[0001] Die Erfindung betrifft eine Vorrichtung und ein Verfahren zum Be stimmen und Ausgleichen eines Höhenschlages eines bei seiner Verwendung in einer Prozesskammer eines Substratbehandlungsreaktors unter Substratbe handlungsbedingungen bei einer durch Beheizen des Suszeptors mit einer Heizeinrichtung erreichten erhöhten Temperatur um eine Drehachse drehan- getriebenen Suszeptors, mit einen ortsfest in einem Gehäuse des Substratbe handlungsreaktors angeordneten Sensoranordnung zur Ermittlung zumindest einer zur Drehachse parallelen Komponente des Abstandes zum Suszeptor, wobei Verstellorgane vorgesehen sind, um einen Neigungslage einer Breitsei tenfläche des Suszeptors zu verstellen. [0001] The invention relates to a device and a method for determining and compensating for a vertical run of a susceptor which is driven to rotate about an axis of rotation when it is used in a process chamber of a substrate treatment reactor under substrate treatment conditions at an elevated temperature achieved by heating the susceptor with a heating device. with a stationary in a housing of the substrate treatment reactor arranged sensor arrangement for determining at least one component of the distance to the susceptor that is parallel to the axis of rotation, adjustment elements being provided to adjust an inclination position of a Breitsei surface of the susceptor.
Stand der Technik State of the art
[0002] Die US 2009/ 0276097 Al beschreibt eine Substratbehandlungsvorrich tung, bei der die Neigungslage eines Suszeptors mit einem optischen Sensor ermittelt werden soll. Während der Drehung des Suszeptors soll die Lage des Suszeptors justiert werden. Der optische Sensor liegt außerhalb der Prozess kammer. Der Lichtstrahl geht durch einen Quarzdom hindurch. US 2009/0276097 A1 describes a substrate treatment device in which the inclination of a susceptor is to be determined with an optical sensor. While the susceptor is rotating, the position of the susceptor is to be adjusted. The optical sensor is outside the process chamber. The light beam goes through a quartz dome.
[0003] Die US 2016/ 0010239 Al beschreibt einen Substratbehandlungsreaktor mit einem Suszeptor, der eine Kreisscheibenform aufweist und von einem An- triebsschaft um die Achse des Antriebsschaftes drehangetrieben werden kann. Es sind Mittel zur Verstellung des Schaftes vorgesehen. [0004] Die US 6,737,663 B2 offenbart eine Vorrichtung, um einen Neigungs winkel einer ebenen Oberfläche einer Maschine gegenüber einer Referenzfläche zu messen, wobei ein Laserstrahl von einem Laser erzeugt und von einem opti schen Empfänger empfangen wird. Der Laserstrahl wird an der Oberfläche re- flektiert, deren Neigung ermittelt werden soll. US 2016/0010239 A1 describes a substrate treatment reactor with a susceptor which has the shape of a circular disk and can be driven in rotation by a drive shaft around the axis of the drive shaft. Means are provided for adjusting the shaft. US Pat. No. 6,737,663 B2 discloses a device for measuring an angle of inclination of a flat surface of a machine with respect to a reference surface, a laser beam being generated by a laser and received by an optical receiver. The laser beam is reflected on the surface whose inclination is to be determined.
[0005] Die US 6,788,991 B2 offenbart eine Vorrichtung, um die exakte Lage eines Substrates in einer Substratbehandlungseinrichtung zu bestimmen. [0005] US Pat. No. 6,788,991 B2 discloses a device for determining the exact position of a substrate in a substrate treatment device.
[0006] Aus der DE 10 2016 122 072 Al ist ein Substratbehandlungsreaktor vor bekannt, bei dem ein Suszeptor um eine Drehachse drehangetriebenen werden kann. Mittels Tastarmen kann die Lage des Suszeptors im Zentrum einer Pro zesskammer eines Substratbehandlungsreaktors eingestellt werden. From DE 10 2016 122 072 A1 a substrate treatment reactor is known in which a susceptor can be driven in rotation about an axis of rotation. The position of the susceptor in the center of a process chamber of a substrate treatment reactor can be adjusted by means of probe arms.
[0007] Die DE 20 2018 100 363.1 offenbart einen Tragkopf, der auf einen dreh- antreibbaren Schaft aufgesetzt werden kann. Der Tragkopf trägt eine Tragplat te, die wiederum einen Suszeptor trägt. Die Tragplatte kann gegenüber einem Flansch, mit dem der Kopf auf dem Schaft befestigt ist, neigungsverstellt wer den. [0007] DE 20 2018 100 363.1 discloses a support head which can be placed on a shaft that can be rotated. The support head carries a Tragplat te, which in turn carries a susceptor. The support plate can be inclined relative to a flange with which the head is attached to the shaft.
Zusammenfassung der Erfindung Summary of the invention
[0008] Der Erfindung liegt die Aufgabe zugrunde, Mittel anzugeben, mit de nen eine Breitseitenfläche eines Suszeptors in eine Drehebene bringbar ist, wo bei oberhalb des Suszeptors eine Prozesskammer mit einer intransparenten Prozesskammerdecke angeordnet ist. The invention is based on the object of specifying means with which a broad side surface of a susceptor can be brought into a plane of rotation, where a process chamber with a non-transparent process chamber ceiling is arranged above the susceptor.
[0009] Gelöst wird die Aufgabe durch die in den Ansprüchen angegebene Er findung, wobei die Unteransprüche nicht nur vorteilhafte Weiterbildungen der nebengeordneten Ansprüche sind, sondern auch eigenständige Lösungen der Aufgabe darstellen. The object is achieved by the invention specified in the claims, wherein the subclaims not only advantageous developments of the are secondary claims, but also represent independent solutions to the task.
[0010] Zunächst und im Wesentlichen wird vorgeschlagen, dass der Substrat behandlungsreaktor durch Beheizen des Suszeptors mit einer Heizeinrichtung auf eine Substratbehandlungstemperatur gebracht wird. Es ist zumindest eine Sensoranordnung mit einem Sensor vorgesehen, die ortsfest mit dem Gehäuse des Substratbehandlungsreaktors verbunden ist. Erfindungs gemäß ist diese Sen soranordnung in der Lage, einen Abstand zwischen sich und einer Breitseitenflä che des Suszeptors zu bestimmen. Es ist insbesondere vorgesehen, dass die Sen soranordnung in der Lage ist, eine Vektorkomponente des Abstandes zu ermit teln, die parallel zur Drehachse verläuft. Erfindungsgemäß soll der Abstand un ter den Prozessbehandlungsbedingungen, also bei den Prozesstemperaturen er mittelt werden, die über 500° C liegen. Darüber hinaus ist vorgesehen, dass die Abstandsbestimmung kontinuierlich während einer Drehung des Suszeptors um seine Drehachse erfolgt. Dies erfolgt erfindungs gemäß dadurch, dass Licht, wel ches von einem Lichtgeber, beispielsweise einem Laser erzeugt wird, an einer Breitseitenfläche des Suszeptors reflektiert wird. Das reflektierte Lichtsignal wird von einem Lichtsensor empfangen. Mittels Laufzeitmessung oder Phasenlagen bestimmung lässt sich in bekannter Weise die Strecke ermitteln, die das Licht vom Lichtgeber zum Lichtsensor zurücklegt. Der Reflexionspunkt des Lichtes bzw. der Treffpunkt des Laserstrahls an der Breitseite des Suszeptors ist von der Drehachse des Suszeptors bevorzugt maximal in Radialrichtung beabstandet. Gemäß einer Variante der Erfindung ist vorgesehen, dass eine Vielzahl von Mes sungen während einer Umdrehung des Suszeptors getätigt wird, sodass eine Vielzahl von Messpunkten ermittelt wird. Bezogen auf eine ideale Drehebene zeigen die gemessenen Abstandswerte eines einen Höhenschlag aufweisenden Suszeptors einen sinusförmigen Verlauf. Aus diesem Verlauf der Abstands werte können Korrekturwerte ermittelt werden, um mittels Verstellorgane die Breitsei tenfläche, an der die Messung vorgenommen worden ist oder eine davon abwei- chende Breitseitenfläche, deren relative Neigungslage zur Breitseitenfläche, an der die Messungen vorgenommen worden sind, bekannt ist, in eine Drehebene zu bringen. Die Erfindung betrifft insbesondere eine Vorrichtung, die eine Heiz einrichtung aufweist, mit der der Suszeptor auf seiner von der Prozesskammer weg weisenden Seite beheizt werden kann. Es ist bevorzugt vorgesehen, dass die zur Prozesskammer weisende Breitseite des Suszeptors durch Verstellen von Verstellorgane in eine Drehebene gebracht werden soll. Die Prozesskammer be sitzt eine sich insbesondere nicht drehende, sondern ortsfeste Prozesskammerde cke, die mittels anderweitiger Justierelemente in eine zur Drehebene parallele Ebene gebracht worden ist. Wird die zur Prozesskammer weisende Breitseiten fläche des Suszeptors in die Drehebene gebracht, so verläuft sie parallel zur Un terseite der Prozesskammerdecke. Dies führt zum Ziel der Erfindung, dass die Prozesskammerhöhe, also der Abstand der insbesondere nach oben weisenden Breitseitenfläche des Suszeptors zur insbesondere nach unten weisenden Breit seitenfläche der Prozesskammerdecke in der gesamten Prozesskammer überall gleich ist. Die Prozesskammer besitzt bevorzugt ein Gaseinlassorgan, durch wel ches Prozessgase in die Prozesskammer eingespeist werden können. Bei den Prozessgasen kann es sich um metallorganische Verbindungen der III. oder IV. Hauptgruppe des Periodensystems handeln. Als Prozessgase kommen zusätzlich Hydride der III. bzw. IV. Hauptgruppe in Betracht, sodass IV-IV-Halbleiter- schichten oder III-V-Halbleiter schichten auf Substraten abgeschieden werden können, die auf der zur Prozesskammer weisenden Breitseitenfläche des Suszep tors aufliegen. Es ist insbesondere vorgesehen, dass die zur Prozesskammer wei sende Breitseitenfläche des Suszeptors Taschen aufweist, in denen jeweils ein Substratträger einliegt, der ein oder mehrere Substrate trägt. Die Substratträger können in bekannter Weise auf Gaskissen gelagert sein, wobei die Gaskissen von Gasströmungen erzeugt werden, die dem Substratträger auch eine Drehung um seine Achse verleihen. Die Gasversorgung der Gaskissen erfolgt durch einen Schaft hindurch, mit dem der Suszeptor drehangetriebenen wird. In einer Vari ante der Erfindung ist vorgesehen, dass die von der Prozesskammer wegweisen- de Breitseitenfläche des Suszeptors mit einer Heizeinrichtung beheizt wird. Bei der Heizeinrichtung kann es sich um eine IR-Heizeinrichtung, RF-Heizeinrich- tung oder um eine andere Energiequelle handeln, mit der Heizleistung dem Sus- zeptor zugeführt wird, um den Suszeptor auf eine Prozesstemperatur zu brin gen. Gemäß einer Variante der Erfindung ist vorgesehen, dass die Messstrecke zwischen der Sensoranordnung und der Breitseitenfläche des Suszeptors durch die Heizeinrichtung hindurch verläuft. Es kann vorgesehen sein, dass die Sensor anordnung eine optische Sensoranordnung ist und der Lichtstrahl durch eine Heizspirale des Heizelementes hindurch verläuft. Die Heizspirale kann von einer RF-Antenne verwirklicht sein. Die Heizspirale kann von einem Hohlkörper ge bildet sein, durch dessen Höhlung ein Kühlmedium hindurchfließt. In einer Va riante der Erfindung ist vorgesehen, dass die Verstellung der Neigungslage bei Raumtemperatur erfolgt, indem beispielsweise Verstellwerkzeuge verwendet werden, die an Gewindeelemente angreift. Die Gewindeelemente können bei spielsweise von Schrauben ausgebildet sein, die von Schraubendrehern oder an deren Schraubwerkzeugen gedreht werden können. Diese Schrauben können wie es die DE 20 2018 100 363.1 zeigt, durch eine zentrale Öffnung des Suszep tors her betätigt werden. Der Offenbarungsgehalt der DE 20 2018 100 363.1 wird deshalb vollständig in den Offenbarungsgehalt dieser Anmeldung mit einbezo gen, insbesondere mit dem Zweck, dort offenbarte Merkmale in die Ansprüche aufzunehmen. In einer Weiterbildung der Erfindung ist vorgesehen, dass die Verstellung der Neigungslage bei erhöhter Temperatur erfolgen kann. Hierzu kann vorgesehen sein, dass die Verstellorgane, die ebenfalls Gewindeelemente aufweisen können, von außerhalb des Reaktorgehäuses betätigt werden können. Alternativ dazu können aber auch Aktoren vorgesehen sein, beispielsweise elekt rische Servomotoren, mit denen die Verstellorgane betätigt werden können, um den Neigungswinkel elektromotorisch zu verstellen. Die Servomotoren können fest mit dem Schaft verbunden sein, mit dem der Suszeptor drehangetriebenen wird. Mit den Aktoren können beispielsweise Gewindespindeln gedreht werden, die jeweils ein Außengewinde aufweisen, wobei das Außengewinde jeweils in eine Spindelmutter eingreift, die an einem Verstellkopf sitzt, der den Suszeptor trägt. Bevorzugt besitzt die Vorrichtung eine Steuereinrichtung in Form einer Steuerung, die von der Sensoranordnung Abstandsdaten erhält. Vom Drehan trieb, mit dem der Schaft gedreht wird, kann die Steuerung Informationen über den Drehwinkel des Suszeptors erhalten. Aus diesen Daten kann die Steuerung Korrekturdaten berechnen, mit denen mittels der Aktoren oder anderweitig die Verstellorgane verstellt werden müssen, um die Breitseitenfläche des Suszeptors in die Drehebene zu bringen. Auch wenn die Abstandsmessungen an einer unte ren Breitseitenfläche des Suszeptors vorgenommen werden, die die von der Pro zesskammer weg weist, wird bevorzugt die Breitseitenfläche in die Drehebene gelegt, die zur Prozesskammer hinweist. Bei der Korrektur können Abweichun gen von der Parallelität der beiden Breitseitenflächen berücksichtigt werden. Die Höhe der Prozesskammer beträgt bevorzugt maximal 40 mm. Bevorzugt liegt die Prozesskammerhöhe im Bereich zwischen 20 und 25 mm, wo bei der Durchmes ser des Suszeptors mindestens 600 mm beträgt. Der Durchmesser kann zwischen 500 und 700 mm liegen. First and foremost, it is proposed that the substrate treatment reactor is brought to a substrate treatment temperature by heating the susceptor with a heating device. At least one sensor arrangement with a sensor is provided, which is fixedly connected to the housing of the substrate treatment reactor. According to the invention, this sensor arrangement is able to determine a distance between itself and a Breitseitenflä surface of the susceptor. In particular, it is provided that the sensor arrangement is able to determine a vector component of the distance that runs parallel to the axis of rotation. According to the invention, the distance is to be determined under the process treatment conditions, that is to say at the process temperatures that are above 500 ° C. In addition, it is provided that the distance is determined continuously while the susceptor is rotating about its axis of rotation. According to the invention, this takes place in that light which is generated by a light transmitter, for example a laser, is reflected on a broad side surface of the susceptor. The reflected light signal is received by a light sensor. The distance that the light travels from the light transmitter to the light sensor can be determined in a known manner by measuring the transit time or determining the phase position. The point of reflection of the light or the point of impact of the laser beam on the broad side of the susceptor is preferably at a maximum distance from the axis of rotation of the susceptor in the radial direction. According to a variant of the invention it is provided that a large number of measurements are made during one revolution of the susceptor, so that a large number of measurement points are determined. In relation to an ideal plane of rotation, the measured distance values of a susceptor having a vertical run show a sinusoidal profile. Correction values can be determined from this course of the distance values in order to use adjusting elements to determine the broad side area on which the measurement was made or one of them deviates. corresponding broadside surface, the relative inclination of which is known to the broadside surface on which the measurements have been made, to bring into a plane of rotation. The invention relates in particular to a device which has a heating device with which the susceptor can be heated on its side facing away from the process chamber. It is preferably provided that the broad side of the susceptor facing the process chamber is to be brought into a plane of rotation by adjusting adjustment elements. The process chamber is seated in particular by a stationary process chamber cover that does not rotate and that has been brought into a plane parallel to the plane of rotation by means of other adjustment elements. If the broadside surface of the susceptor facing the process chamber is brought into the plane of rotation, it runs parallel to the underside of the process chamber ceiling. This leads to the aim of the invention that the process chamber height, that is to say the distance between the broad side surface of the susceptor pointing upward and the broad side surface of the process chamber ceiling pointing downward, is the same throughout the entire process chamber. The process chamber preferably has a gas inlet element through which process gases can be fed into the process chamber. The process gases can be organometallic compounds of III. or IV. main group of the periodic table. In addition, hydrides of III are used as process gases. or IV. main group into consideration, so that IV-IV semiconductor layers or III-V semiconductor layers can be deposited on substrates that rest on the broad side surface of the susceptor facing the process chamber. In particular, it is provided that the broad side surface of the susceptor facing the process chamber has pockets in each of which there is a substrate carrier which carries one or more substrates. The substrate carriers can be mounted in a known manner on gas cushions, the gas cushions being generated by gas flows which also give the substrate carrier a rotation about its axis. The gas supply to the gas cushions occurs through a shaft with which the susceptor is driven in rotation. In a variant of the invention it is provided that the away from the process chamber de broadside surface of the susceptor is heated with a heating device. The heating device can be an IR heating device, RF heating device or another energy source with which heating power is supplied to the susceptor in order to bring the susceptor to a process temperature. According to a variant of the invention provided that the measuring section between the sensor arrangement and the broad side surface of the susceptor runs through the heating device. It can be provided that the sensor arrangement is an optical sensor arrangement and the light beam runs through a heating coil of the heating element. The heating coil can be realized by an RF antenna. The heating coil can be formed by a hollow body through the cavity of which a cooling medium flows. In a variant of the invention it is provided that the adjustment of the inclination takes place at room temperature, for example by using adjustment tools that engage threaded elements. The threaded elements can be formed from screws, for example, which can be turned by screwdrivers or their screwing tools. As DE 20 2018 100 363.1 shows, these screws can be actuated through a central opening in the susceptor. The disclosure content of DE 20 2018 100 363.1 is therefore fully included in the disclosure content of this application, in particular with the purpose of including features disclosed there in the claims. In a further development of the invention it is provided that the inclination can be adjusted at an elevated temperature. For this purpose, it can be provided that the adjustment elements, which can also have threaded elements, can be actuated from outside the reactor housing. As an alternative to this, however, actuators can also be provided, for example electric servomotors with which the adjusting elements can be operated in order to adjust the angle of inclination by an electric motor. The servomotors can be permanently connected to the shaft with which the susceptor is driven in rotation. With the actuators, for example, threaded spindles can be rotated, each of which has an external thread, the external thread in each case in a spindle nut engages, which sits on an adjustment head that carries the susceptor. The device preferably has a control device in the form of a controller which receives distance data from the sensor arrangement. The control system can receive information about the angle of rotation of the susceptor from the rotary drive with which the shaft is rotated. From this data, the control can calculate correction data with which the adjusting elements must be adjusted by means of the actuators or in some other way in order to bring the broad side surface of the susceptor into the plane of rotation. Even if the distance measurements are made on a lower broad side surface of the susceptor that faces away from the process chamber, the broad side surface is preferably placed in the plane of rotation that points towards the process chamber. During the correction, deviations from the parallelism of the two broad side surfaces can be taken into account. The height of the process chamber is preferably a maximum of 40 mm. The process chamber height is preferably in the range between 20 and 25 mm, where the diameter of the susceptor is at least 600 mm. The diameter can be between 500 and 700 mm.
[0011] Die Heizeinrichtung wird bevorzugt von einem spiralförmigen Körper, insbesondere einer spiralförmigen Antenne ausgebildet. Die Antenne kann ein elektromagnetisches Wechselfeld erzeugen, das im elektrisch leitenden Suszep tor Wirbelströme erzeugt, die den Suszeptor auf mindestens 500°C aufheizen.The heating device is preferably formed by a spiral body, in particular a spiral antenna. The antenna can generate an electromagnetic alternating field that generates eddy currents in the electrically conductive suscepter, which heat the susceptor to at least 500 ° C.
Ein Lichtgeber, der am Boden des Reaktorgehäuses angeordnet ist, erzeugt ei nen Lichtstrahl, der durch Heizeinrichtung und insbesondere durch den Zwi schenraum zwischen zwei Spiralwindungen bis zur Unterseite des Suszeptors gelangt. Dort wird der Lichtstrahl diffus zurückgeworfen. Das zurückgeworfe ne Licht gelangt durch denselben oder einen anderen Zwischenraum zwischen zwei Spiralwindungen hindurch zu einem Lichtsensor. Kurze Beschreibung der Zeichnungen A light generator, which is arranged on the bottom of the reactor housing, generates a beam of light that passes through the heating device and in particular through the intermediate space between two spiral windings to the bottom of the susceptor. There the light beam is reflected back diffusely. The reflected light passes through the same or another space between two spiral windings to a light sensor. Brief description of the drawings
[0012] Ein Ausführungsbeispiel der Erfindung wird nachfolgend anhand einer Zeichnung erläutert. Es zeigt: An embodiment of the invention is explained below with reference to a drawing. It shows:
Fig. 1 einen Querschnitt durch ein Ausführungsbeispiel eines CVD- Reaktors 1 shows a cross section through an exemplary embodiment of a CVD reactor
Beschreibung der Ausführungsformen [0013] Die Figur 1 zeigt einen Querschnitt durch einen Substratbehandlungs reaktor zur Verdeutlichung der wesentlichen Elemente der Erfindung. Description of the embodiments [0013] FIG. 1 shows a cross section through a substrate treatment reactor to illustrate the essential elements of the invention.
[0014] Die Figur 1 zeigt ein Reaktorgehäuse 1, welches ein gasdichtes Edel stahlgehäuse ist. Innerhalb des Gehäuses befindet sich ein Suszeptor 3, bei dem es sich um ein kreisscheibenförmiges Graphitteil, Keramikteil oder Metallteil handeln kann. Der Suszeptor 3 bildet mit einer Breitseitenfläche 3" eine untere Begrenzungsfläche einer Prozesskammer 2, die nach oben hin durch eine Unter seite 14' einer Deckenplatte 14 begrenzt ist. Die Deckenplatte 14 kann aus Gra phit, einem keramischen Material oder dergleichen bestehen und kann lagejus tiert werden. Die Deckenplatte 14 ist bevorzugt derart lagejushert, dass ihre Unterseite 14 senkrecht zu einer Drehachse 5 verläuft. Die Deckenplatte 14 ist ortsfest dem Gehäuse zugeordnet. Sie ist insbesondere nicht drehbar. Figure 1 shows a reactor housing 1, which is a gas-tight stainless steel housing. Inside the housing there is a susceptor 3, which can be a circular disk-shaped graph part, ceramic part or metal part. The susceptor 3 forms with a broad side surface 3 ″ a lower boundary surface of a process chamber 2 which is bounded at the top by an underside 14 ′ of a cover plate 14. The cover plate 14 can consist of graphite, a ceramic material or the like and can be position-adjusted The cover plate 14 is preferably position-adjusted in such a way that its underside 14 runs perpendicular to an axis of rotation 5. The cover plate 14 is assigned to the housing in a stationary manner.
[0015] In der Drehachse 5 beßndet sich ein Gaseinlassorgan 17 mit mehreren Gaszuleitungen, um voneinander verschiedene Prozessgase jeweils zusammen mit einem Trägergas in die Prozesskammer 2 einspeisen zu können. Die Pro- zesskammerdecke 14 kann vom Gaseinlassorgan 17 getragen werden. Ein unte rer Abschnitt des Gaseinlassorganes 17 kann in einer Aussparung des Suszep- tors 3 einliegen. [0016] Der Suszeptor 3 wird von einem Tragkopf 22 getragen, der sich in der Drehachse 5 befindet. Unter Zwischenlage einer elastischen Dichtung 23 ruht der Tragkopf 22 auf einem Schaft 18, der von einem Drehantrieb 19 in einem Drehlager 21 gelagert drehangetriebenen werden kann. In the axis of rotation 5 there is a gas inlet element 17 with a plurality of gas supply lines in order to be able to feed different process gases into the process chamber 2 together with a carrier gas. The process chamber ceiling 14 can be carried by the gas inlet element 17. A lower section of the gas inlet element 17 can lie in a recess in the susceptor 3. The susceptor 3 is carried by a support head 22 which is located in the axis of rotation 5. With the interposition of an elastic seal 23, the support head 22 rests on a shaft 18 which can be rotatably driven by a rotary drive 19 mounted in a rotary bearing 21.
[0017] Innerhalb des Schaftes 18 verlaufen in der Figur nur angedeutete Gas leitungen, die durch die Dichtung 23 und den Tragkopf 22 hindurch in den Suszeptor 3 verlaufen, wo sie in Taschen münden, in denen sich Substratträ ger 15 befinden, die jeweils ein oder mehrere Substrate 16 tragen. Durch diese Gaszuleitungen können Trägergasströme geleitet werden, die die Substratträ ger 15 in bekannter Weise um ihre Achse drehantreiben. Der zur Prozesskam mer 2 weisende Breitseitenfläche 3" des Suszeptors 3 liegt eine Breitseitenflä che 3' gegenüber, die zu einer Heizeinrichtung 4 hinweist. Die Heizeinrich tung 4 wird im Ausführungsbeispiel von einer spiralförmigen Antenne ausge bildet, die ein elektromagnetisches Wechselfeld erzeugt, welches im elektrisch leitfähigen Suszeptor 3 Wirbelströme erzeugt, mit denen der Suszeptor beheizt wird. Within the shaft 18 run in the figure only indicated gas lines, which run through the seal 23 and the support head 22 through into the susceptor 3, where they open into pockets in which there are substrate carriers 15, each one or several substrates 16 carry. Carrier gas flows can be passed through these gas feed lines, which drive the substrate carriers 15 to rotate about their axis in a known manner. The broad side surface 3 ″ of the susceptor 3 facing the process chamber 2 is opposite a broad side surface 3 ′, which points to a heating device 4. In the exemplary embodiment, the heating device 4 is formed by a spiral antenna that generates an electromagnetic alternating field which is electrically conductive susceptor 3 generates eddy currents with which the susceptor is heated.
[0018] Es ist eine gehäusefeste Sensoranordnung 8, 9 vorgesehen. Im Ausfüh rungsbeispiel ist die Sensoranordnung 8, 9 mit dem Boden des Reaktorgehäu ses 1 verbunden. Mit dem Reaktorgehäuse 1 ist auch das Drehlager 21 bzw. der Drehantrieb 19 verbunden, sodass die Drehachse 5, um die der Schaft 18 bzw. der Suszeptor 3 drehangetriebenen werden kann, gehäusefest verläuft. Mit der Sensoranordnung 8, 9 kann ein Abstand a der Breitseitenfläche 3' zur Sensoran- ordnung 8, 9 gemessen werden. Dies erfolgt bevorzugt während sich der Sus zeptor 3 um die Drehachse 5 dreht. Die von der Sensoranordnung 8, 9 gewon nenen Messwerte werden in einer Steuerung 10 gespeichert. Die Steuerung 10 erhält beispielsweise vom Drehantrieb 19 Winkelangaben über die Drehstellung des Suszeptors 3, sodass durch Auswerten dieser Daten einen Neigungslage 11 der Breitseitenfläche 3' des Suszeptors 3 bestimmt werden kann. Die Elemente der Sensoranordnung 8, 9 sind beim Ausführungsbeispiel fest mit der Untersei te des Gehäuses 1 verbunden, sodass der Abstand a ein Abstand eines radial äußeren Bereichs der Unterseite 3' des Suszeptors 3 zum Gehäuse ist. Besitzt der Suszeptor 3 einen Höhenschlag, so ändert sich bei einer Drehung des Sus zeptors 3 der Abstand a periodisch. A housing-fixed sensor arrangement 8, 9 is provided. In the exemplary embodiment, the sensor arrangement 8, 9 is connected to the bottom of the Reaktorgehäu ses 1. The rotary bearing 21 or the rotary drive 19 is also connected to the reactor housing 1, so that the axis of rotation 5, about which the shaft 18 or the susceptor 3 can be driven in rotation, runs fixed to the housing. With the sensor arrangement 8, 9, a distance a between the broad side surface 3 ′ and the sensor arrangement 8, 9 can be measured. This is preferably done while the susceptor 3 is rotating about the axis of rotation 5. The measured values obtained by the sensor arrangement 8, 9 are stored in a controller 10. The controller 10 receives, for example, angle information from the rotary drive 19 about the rotational position of the susceptor 3, so that an inclination position 11 is obtained by evaluating this data the broad side surface 3 'of the susceptor 3 can be determined. In the exemplary embodiment, the elements of the sensor arrangement 8, 9 are firmly connected to the underside of the housing 1, so that the distance a is a distance from a radially outer region of the underside 3 'of the susceptor 3 to the housing. If the susceptor 3 has a vertical stroke, when the susceptor 3 is rotated, the distance a changes periodically.
[0019] Es ist ein Ziel der Erfindung, die Höhe h zwischen der zur Prozess kammer 2 weisenden Breitseitenfläche 3" und der Unterseite 14' der Decken platte 14 an jedem Ort auf der Breitseitenfläche 3" gleich zu halten. Die beiden Flächen 3" und 14' sollen parallel zueinander verlaufen. It is an object of the invention to keep the height h between the broadside surface 3 "facing the process chamber 2 and the bottom 14 'of the ceiling plate 14 at every location on the broadside surface 3" the same. The two surfaces 3 ″ and 14 ′ should run parallel to one another.
[0020] Mit den oben genannten Messdaten kann somit die Neigung der Breit seitenfläche 3" gegenüber der Unterseite 14' der Deckenplatte 14 ermittelt wer den. With the above-mentioned measurement data, the inclination of the broad side surface 3 ″ relative to the underside 14 'of the ceiling plate 14 can thus be determined.
[0021] Es sind Verstellorgane 6, 7 vorgesehen, mit denen die Neigungslage 11 verstellt werden kann. Bei den Verstellorganen 6, 7 kann es sich um solche handeln, nur dann betätigt werden können, wenn das Reaktorgehäuse 1 ge öffnet ist, es kann sich beispielsweise um Verstellorgane handeln, wie sie die DE 20 2018 100 363.1 offenbart. Adjusting members 6, 7 are provided with which the inclination position 11 can be adjusted. The adjusting elements 6, 7 can be those that can only be actuated when the reactor housing 1 is open, for example adjusting elements as disclosed in DE 20 2018 100 363.1.
[0022] Beim Ausführungsbeispiel kann die Neigungslage 11 nicht nur im ab gekühlten Zustand des Suszeptors 3 sondern auch unter Substratbehandlungs bedingungen verstellt werden. Hierzu sind elektromotorisch betreibbare Akto ren 12 vorgesehen, die in einem Verstellantriebsgehäuse 20 angeordnet sind, welches fest mit dem Schaft 18 verbunden ist, also mit dem Schaft 18 mitdrehen kann. Die Aktoren 12 können ein Außengewinde aufweisende Gewindespin del 6 drehantreiben, wobei die Aktoren 12 Schrittmotoren sein können, mit de- nen auch kleine Winkelverstellungen möglich sind. Der Tragkopf besitzt Spin delmuttern 7, mit Innengewinden, in die die Außengewinde der Gewindespin deln 6 eingreifen. Durch eine Drehwinkelverstellung der Gewindespindeln 6 lässt sich somit die Neigungslage 11 verstellen. In the exemplary embodiment, the inclination position 11 can be adjusted not only in the cooled state of the susceptor 3 but also under substrate treatment conditions. For this purpose, actuators 12, which can be operated by an electric motor, are provided, which are arranged in an adjustment drive housing 20 which is firmly connected to the shaft 18, that is to say can rotate with the shaft 18. The actuators 12 can drive a threaded spindle del 6 having an external thread, wherein the actuators 12 can be stepper motors with Small angle adjustments are also possible. The support head has spin delmuttern 7, with internal threads into which the external threads of the threaded spindles 6 engage. The inclination position 11 can thus be adjusted by adjusting the angle of rotation of the threaded spindles 6.
[0023] Die Sensoranordnung 8,9 besitzt bevorzugt einen Lichtgeber 8, bei dem es sich bevorzugt um einen Laser handeln kann. Der Laser erzeugt einen Laser strahl, der entlang einer Messstrecke 13 zur Breitseitenfläche 3" des Suszep- tors 3 verläuft. Ein davon zurückgeworfener Lichtstrahl erreicht einen Licht sensor 9, sodass mit Lichtgeber 8 und Lichtsensor 9 der Abstand a bestimmbar ist. Der Lichtgeber 8 erzeugt einen Lichtstrahl, der zur Breitseitenfläche 3' ge richtet ist. Dort trifft er im radial äußeren Bereich des Suszeptors 3 auf. Er er zeugt einen lichtemittierenden Bereich. Das von diesem Bereich abgestrahlte Licht erreicht den Lichtsensor 9. In der Zeichnung sind Lichtgeber 8 und Licht sensor 9 als voneinander beabstandet dargestellt. In einem nicht dargestellten Ausführungsbeispiel werden Lichtgeber 8 und Lichtsensor 9 von einem ge meinsamen Gehäuse ausgebildet, sodass der vom Lichtgeber abgegebene Licht strahl mit dem vom Lichtsensor 9 empfangenen Lichtstrahl im Wesentlichen zusammenfällt. The sensor arrangement 8, 9 preferably has a light transmitter 8, which can preferably be a laser. The laser generates a laser beam that runs along a measuring section 13 to the broad side surface 3 ″ of the susceptor 3. A light beam reflected therefrom reaches a light sensor 9, so that the distance a can be determined with the light transmitter 8 and the light sensor 9. The light transmitter 8 generates a light beam which is directed towards the broad side surface 3 ', where it impinges in the radially outer area of the susceptor 3. It generates a light-emitting area and the light emitted from this area reaches the light sensor 9. In the drawing there are light emitters 8 and light sensor 9 is shown as being spaced apart from one another In an exemplary embodiment not shown, light transmitter 8 and light sensor 9 are formed by a common housing so that the light beam emitted by the light transmitter essentially coincides with the light beam received by light sensor 9.
[0024] Die vorstehenden Ausführungen dienen der Erläuterung der von der Anmeldung insgesamt erfassten Erfindungen, die den Stand der Technik zu mindest durch die folgenden Merkmalskombinationen jeweils auch eigenstän dig weiterbilden, wobei zwei, mehrere oder alle dieser Merkmalskombinatio nen auch kombiniert sein können, nämlich: The above explanations serve to explain the inventions covered by the application as a whole, which further develop the state of the art at least by means of the following combinations of features, in which case two, more or all of these combinations of features can also be combined, namely:
[0025] Ein Verfahren, das dadurch gekennzeichnet ist, dass der Abstand unter den Prozessbehandlungsbedingungen ermittelt wird. [0026] Ein Verfahren, das dadurch gekennzeichnet ist, dass die erhöhte Tem peratur mindestens 500°C beträgt. A method which is characterized in that the distance is determined under the process treatment conditions. A method which is characterized in that the elevated temperature is at least 500 ° C.
[0027] Ein Verfahren, das dadurch gekennzeichnet ist, dass die Verstellung der Neigungslage 11 bei einer abgesenkten Temperatur insbesondere bei Raum- temperatur durchgeführt wird. A method which is characterized in that the adjustment of the inclination position 11 is carried out at a lowered temperature, in particular at room temperature.
[0028] Ein Verfahren, das dadurch gekennzeichnet ist, dass der Höhenschlag mit einer optischen Sensoranordnung ermittelt wird. A method which is characterized in that the vertical run is determined with an optical sensor arrangement.
[0029] Ein Verfahren, das dadurch gekennzeichnet ist, dass eine Steuerung 10 aus den bei einer Drehung des Suszeptors 3 um seine Drehachse 5 aufgenom- menen Abstandswerten Korrekturwerte ermittelt, mit denen die Verstellorga ne 6, 7 verstellt werden. A method which is characterized in that a controller 10 determines correction values from the distance values recorded when the susceptor 3 rotates about its axis of rotation 5, with which the adjustment elements 6, 7 are adjusted.
[0030] Ein Verfahren, das dadurch gekennzeichnet ist, dass die Verstellung der Neigungslage 11 bei der erhöhten Temperatur erfolgt. A method which is characterized in that the adjustment of the inclination position 11 takes place at the increased temperature.
[0031] Ein Verfahren, das dadurch gekennzeichnet ist, dass die Verstellorga- ne 6, 7 Gewindeelemente aufweisen und die Korrekturwerte Drehwinkel zum Verstellen der Gewindeelemente sind. A method which is characterized in that the adjusting elements 6, 7 have threaded elements and the correction values are angles of rotation for adjusting the threaded elements.
[0032] Eine Vorrichtung, die dadurch gekennzeichnet ist, dass die Messstre cke 13 der Sensoranordnung 8, 9 durch die Heizeinrichtung 4 verläuft. A device which is characterized in that the measuring section 13 of the sensor arrangement 8, 9 runs through the heating device 4.
[0033] Eine Vorrichtung, die dadurch gekennzeichnet ist, dass die Sensoran- Ordnung 8, 9 einen optischen Sensor 9 aufweist und insbesondere den Abstand zu einer zur Heizeinrichtung 4 weisenden Breitseite des Suszeptors 3 zur Sen soranordnung 8, 9 misst. [0034] Eine Vorrichtung, die dadurch gekennzeichnet ist, dass die Verstellor gane 6, 7 Gewindeelemente aufweisen. A device which is characterized in that the sensor arrangement 8, 9 has an optical sensor 9 and in particular measures the distance from a broad side of the susceptor 3 to the sensor arrangement 8, 9 facing the heating device 4. A device, which is characterized in that the Verstellor gane 6, 7 have threaded elements.
[0035] Eine Vorrichtung, die dadurch gekennzeichnet ist, dass die Verstellor gane 6, 7 von motorisch betriebenen Aktoren 12 unter Substratbehandlungsbe- dingungen verstellbar sind. A device which is characterized in that the adjusting elements 6, 7 can be adjusted by motor-driven actuators 12 under substrate treatment conditions.
[0036] Eine Vorrichtung, gekennzeichnet durch eine Steuereinrichtung 10, die aus den vom Sensor ermittelten Abstandswerten Korrekturwerte liefert, mit denen die Neigungslage 11 des Suszeptors 3 manuell oder dynamisch während einer Substratbehandlung verändert wird. [0037] Ein Verfahren, das dadurch gekennzeichnet ist, dass an mindestens dreiA device, characterized by a control device 10, which supplies correction values from the distance values determined by the sensor, with which the inclination position 11 of the susceptor 3 is changed manually or dynamically during a substrate treatment. A method, which is characterized in that at least three
Drehpositionen des Suszeptors 3 Abstandswerte ermittelt werden, die als Stütz stellen zur Berechnung einer Sinusfunktion verwendet werden, mit der die Korrekturwerte berechnet werden, um den Neigungswinkel einer zur Prozess kammer 2 weisenden Breitseitenfläche des Suszeptors 3 zu einer Drehebene des Suszeptors 3 zu minimieren. Rotational positions of the susceptor 3 distance values are determined, which are used as support points for calculating a sine function with which the correction values are calculated in order to minimize the angle of inclination of a broadside surface of the susceptor 3 facing the process chamber 2 to a plane of rotation of the susceptor 3.
[0038] Eine Vorrichtung, die dadurch gekennzeichnet ist, dass die zur Prozess kammer 2 weisende Breitseitenfläche 3' des Suszeptors 3 einer Prozesskammer decke gegenüberliegt, die sich parallel zur Drehebene erstreckt und die von der Breitseitenfläche 3', 3" des Suszeptors 3 maximal 40 mm entfernt ist. [0039] Alle offenbarten Merkmale sind (für sich, aber auch in Kombination untereinander) erfindungswesentlich. In die Offenbarung der Anmeldung wird hiermit auch der Offenbarungsinhalt der zu gehörigen/ beigefügten Prioritäts unterlagen (Abschrift der Voranmeldung) vollinhaltlich mit einbezogen, auch zu dem Zweck, Merkmale dieser Unterlagen in Ansprüche vorliegender An- meldung mit aufzunehmen. Die Unteransprüche charakterisieren, auch ohne die Merkmale eines in Bezug genommenen Anspruchs, mit ihren Merkmalen eigenständige erfinderische Weiterbildungen des Standes der Technik, insbe sondere um auf Basis dieser Ansprüche Teilanmeldungen vorzunehmen. Die in jedem Anspruch angegebene Erfindung kann zusätzlich ein oder mehrere der in der vorstehenden Beschreibung, insbesondere mit Bezugsziffern versehene und/ oder in der Bezugsziffernliste angegebene Merkmale aufweisen. Die Er findung betrifft auch Gestaltungsformen, bei denen einzelne der in der vorste henden Beschreibung genannten Merkmale nicht verwirklicht sind, insbeson- dere soweit sie erkennbar für den jeweiligen Verwendungszweck entbehrlich sind oder durch andere technisch gleichwirkende Mittel ersetzt werden kön nen. A device which is characterized in that the broad side surface 3 'of the susceptor 3 facing the process chamber 2 lies opposite a process chamber cover which extends parallel to the plane of rotation and which extends from the broad side surface 3', 3 "of the susceptor 3 at most 40 mm away. All the features disclosed are essential to the invention (individually, but also in combination with one another). The disclosure of the application hereby also fully includes the disclosure content of the associated / attached priority documents (copy of the prior application) for the purpose of including features of these documents in claims of the present message to be included. The subclaims characterize, even without the features of a referenced claim, with their features independent inventive developments of the prior art, in particular in order to make divisional applications on the basis of these claims. The invention specified in each claim can additionally have one or more of the features provided in the above description, in particular provided with reference numbers and / or specified in the list of reference numbers. The invention also relates to design forms in which some of the features mentioned in the above description are not implemented, in particular if they are recognizable for the respective purpose or can be replaced by other technically equivalent means.
Liste der Bezugszeichen List of reference symbols
1 Reaktorgehäuse 23 Dichtung1 reactor housing 23 seal
2 Prozesskammer 2 process chambers
3 Suszeptor 3 susceptor
3' Breitseitenfläche 3 'broadside face
3" Breitseitenfläche 3 "broadside surface
4 Heizeinrichtung 4 heating device
5 Drehachse 5 axis of rotation
6 Verstellorgan, Gewindespindel 6 adjusting device, threaded spindle
7 Verstellorgan, Spindelmutter 7 adjusting device, spindle nut
8 Lichtgeber 8 light sources
9 Lichtsensor 9 light sensor
10 Steuerung 10 control
11 Neigungslage 11 Inclination
12 Aktoren 12 actuators
13 Messstrecke 13 measuring section
14 Deckenplatte 14 ceiling plate
14' Unterseite 14 'bottom
15 Substratträger 15 substrate carriers
16 Substrat 16 substrate
17 Gaseinlassorgan 17 gas inlet device
18 Schaft 18 shaft
19 Drehantrieb 19 rotary drive
20 Verstellantriebs gehäuse 20 actuator housing
21 Drehlager 21 pivot bearings
22 Tragknopf 22 carrying button

Claims

Ansprüche Expectations
Vorrichtung mit einem Substratbehandlungsreaktor, der in einem Gehäu se (1) einen um eine Drehachse (5) drehantreibbaren Suszeptor (3) auf weist, Device with a substrate treatment reactor, which in a housing (1) has a susceptor (3) that can be rotated about an axis of rotation (5),
der mit einer ersten Breitseitenfläche (3") eine untere Begrenzungsfläche einer Prozesskammer (2) ausbildet, die nach oben hin durch eine Untersei te (14') einer Deckenplatte (14) begrenzt ist, which with a first broad side surface (3 ") forms a lower boundary surface of a process chamber (2) which is bounded at the top by an underside (14 ') of a cover plate (14),
wobei durch ein in der Drehachse (5) angeordnetes Gaseinlassorgan (17) Prozessgase in die Prozesskammer process gases into the process chamber through a gas inlet element (17) arranged in the axis of rotation (5)
(2) einspeisbar sind, (2) can be fed in,
wobei eine zweite Breitseitenfläche (3'), die der ersten Breitseitenfläche (3") gegenüberliegt, auf eine von einer spiralförmigen Antenne ausgebildete Heizeinrichtung (4) weist, mit der der Suszeptor (3) beheizbar ist, gekennzeichnet durch eine mit dem Boden des Reaktorgehäuses (1) ver bundene Sensoranordnung (8, 9), mit der ein Abstand (a) der zweiten Breitseitenfläche (3') zur Sensoranordnung (8, 9) unter Prozessbehand lungsbedingungen messbar ist, während der Suszeptor (3) um die Dreh achse (5) dreht und der Suszeptor a second broadside surface (3 '), which is opposite the first broadside surface (3 "), points to a heating device (4) formed by a spiral antenna, with which the susceptor (3) can be heated, characterized by one with the bottom of the reactor housing (1) connected sensor arrangement (8, 9), with which a distance (a) between the second broad side surface (3 ') and the sensor arrangement (8, 9) can be measured under process treatment conditions, while the susceptor (3) is about the axis of rotation ( 5) rotates and the susceptor
(3) auf mindestens 500°C aufgeheizt ist, wobei die Messstrecke zwischen der Sensoranordnung (8, 9) und der Breitseitenfläche (3') durch die Heizeinrichtung (3) is heated to at least 500 ° C., the measuring section between the sensor arrangement (8, 9) and the broad side surface (3 ') being caused by the heating device
(4) hindurch verläuft. (4) runs through it.
Vorrichtung nach Anspruch 1, gekennzeichnet durch Verstellorgane (6, 7) zur Veränderung einer Neigungslage (11) der ersten Breitseitenfläche (3") des Suszeptors (3). Device according to Claim 1, characterized by adjusting elements (6, 7) for changing an inclination position (11) of the first broad side surface (3 ") of the susceptor (3).
Vorrichtung nach Anspruch 2, dadurch gekennzeichnet, dass die Verstell organe (6, 7) Gewindeelemente aufweisen. Device according to Claim 2, characterized in that the adjusting members (6, 7) have threaded elements.
Vorrichtung nach Anspruch 2 oder 3, gekennzeichnet durch eine Steuer einrichtung (10), die aus den vom Sensor ermittelten Abstandswerten Kor- rekturwerte liefert, mit denen die Neigungslage (11) des Suszeptors ma nuell oder dynamisch während einer Substratbehandlung verändert wird. Apparatus according to claim 2 or 3, characterized by a control device (10), which from the distance values determined by the sensor Kor- supplies correction values with which the inclination position (11) of the susceptor is changed manually or dynamically during a substrate treatment.
5. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch ge kennzeichnet, dass an mindestens drei Drehpositionen des Suszeptors (3) Abstandswerte ermittelt werden, die als Stützstellen zur Berechnung einer5. Device according to one of the preceding claims, characterized in that at at least three rotational positions of the susceptor (3) distance values are determined, which as support points for calculating a
Sinusfunktion verwendet werden, mit der die Korrekturwerte berechnet werden, um den Neigungswinkel der zur Prozesskammer (2) weisenden Breitseitenfläche (3') des Suszeptors (3) zu einer Drehebene des Suszep tors (3) zu minimieren. Sin function can be used, with which the correction values are calculated in order to minimize the angle of inclination of the broad side surface (3 ') of the susceptor (3) facing the process chamber (2) to a plane of rotation of the susceptor (3).
6. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch ge kennzeichnet, dass die Prozesskammerdecke von der Breitseitenfläche (3') des Suszeptors (3) maximal 40 mm entfernt ist. 6. Device according to one of the preceding claims, characterized in that the process chamber ceiling is a maximum of 40 mm away from the broad side surface (3 ') of the susceptor (3).
7. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch ge kennzeichnet, dass die Sensoranordnung (8, 9) einen Lichtgeber (8), der einen entlang der Messstrecke (13) verlaufenden Laserstrahl erzeugt, und einen Lichtsensor (9), der den von der Breitseitenfläche (3") zurückgewor fenen Lichtstrahl empfängt. 7. Device according to one of the preceding claims, characterized in that the sensor arrangement (8, 9) has a light transmitter (8) which generates a laser beam running along the measuring path (13), and a light sensor (9) which is the from Broadside surface (3 ") receives reflected light beam.
8. Vorrichtung nach Anspruch 7, dadurch gekennzeichnet, dass der Lichtge ber (8) und der Lichtsensor (9) derart in einem gemeinsamen Gehäuse an- geordnet sind, dass der vom Lichtgeber (8) abgegebene Lichtstrahl mit dem vom Lichtsensor (9) empfangenen Lichtstrahl im Wesentlichen zu sammenfällt. 8. The device according to claim 7, characterized in that the light transmitter (8) and the light sensor (9) are arranged in a common housing in such a way that the light beam emitted by the light transmitter (8) corresponds to that received by the light sensor (9) Light beam essentially coincides.
9. Vorrichtung nach einem der vorhergehenden Ansprüche, dadurch ge kennzeichnet, dass die Messstrecke (13) durch einen Spalt zwischen zwei Spiralwindungen der spiralförmigen Heizeinrichtung (14) hindurch ver läuft. 9. Device according to one of the preceding claims, characterized in that the measuring section (13) through a gap between two Spiral turns of the spiral heater (14) runs through ver.
10. Verfahren zum Bestimmen oder Ausgleichen eines Höhenschlages eines bei seiner Verwendung in einer Prozesskammer (2) eines Substratbehand- lungsreaktors unter Substratbehandlungsbedingungen, bei dem der Sus- zeptor (3) mit einer Heizeinrichtung (4) auf zumindest 500°C aufgeheizt und um eine Drehachse (5) drehangetrieben wird, mit einer ortsfest in ei nem Gehäuse (1) des Substratbehandlungsreaktors angeordneten Sensor anordnung (8, 9), mit der während der Suszeptor (3) um die Drehachse (5) dreht zumindest eine zur Drehachse (5) parallele Komponente eines Ab standes (a) einer Breitseitenfläche (3') des Suszeptors (3) zur Sensoranord nung (8, 9) gemessen wird, wobei Verstellorgane (6, 7) vorgesehen sind, um eine Neigungslage (11) einer zu einer Deckenplatte (14) der Prozess kammer (2) weisenden Breitseitenfläche (3") des Suszeptors (3) zur Dreh- achse zu verstellen, dadurch gekennzeichnet, dass die Messtrecke der Sen soranordnung (8, 9) durch die Heizeinrichtung (4) hindurch verläuft. 10. A method for determining or compensating for an excursion in height when it is used in a process chamber (2) of a substrate treatment reactor under substrate treatment conditions, in which the susceptor (3) is heated to at least 500 ° C. with a heating device (4) and by a Axis of rotation (5) is driven in rotation, with a stationary sensor arrangement (8, 9) arranged in a housing (1) of the substrate treatment reactor, with which at least one of the sensors rotates around the axis of rotation (5) while the susceptor (3) rotates about the axis of rotation (5) parallel component of a stand (a) of a broad side surface (3 ') of the susceptor (3) for the sensor arrangement (8, 9) is measured, with adjusting elements (6, 7) being provided to adjust an inclination position (11) to a ceiling plate (14) to adjust the process chamber (2) facing broad side surface (3 ″) of the susceptor (3) to the axis of rotation, characterized in that the measuring section of the sensor arrangement (8, 9) runs through the heating device (4).
11. Verfahren nach Anspruch 10, dadurch gekennzeichnet, dass die Neigungs lage (11) des Suszeptors (3) manuell oder automatisiert während einer Sub- stratbehandlung verändert wird. 11. The method according to claim 10, characterized in that the inclination position (11) of the susceptor (3) is changed manually or automatically during a substrate treatment.
12. Verfahren nach Anspruch 10 oder 11, dadurch gekennzeichnet, dass an mindestens drei Drehpositionen des Suszeptors (3) Abstandswerte ermit telt und diese als Stützstellen zur Berechnung einer Sinusfunktion ver wendet werden, mit der die Korrekturwerte berechnet werden, mit denen der Neigungswinkel der zur Prozesskammer (2) weisenden Breitseitenflä che (3") des Suszeptors (3) zu einer Drehebene des Suszeptors (3) mini miert wird. 12. The method according to claim 10 or 11, characterized in that at at least three rotary positions of the susceptor (3) distance values are determined and these are used as support points for calculating a sine function with which the correction values are calculated with which the angle of inclination of the to Process chamber (2) facing Breitseitenflä surface (3 ") of the susceptor (3) is minimized to a plane of rotation of the susceptor (3).
13. Verfahren nach einem der Ansprüche 10 bis 12, dadurch gekennzeichnet, dass am Boden des Reaktorgehäuses (1) ein Lichtgeber (8) und ein Licht sensor (9) angeordnet sind, wobei der Lichtgeber (8) ein durch die Heiz einrichtung (4) hindurchtretenden Lichtstrahl erzeugt, der von der Breit- Seitenfläche (3') zurückgeworfen wird, wobei der zurückgeworfene Licht strahl durch die Heizeinrichtung (4) zum Lichtsensor (9) gelangt. 13. The method according to any one of claims 10 to 12, characterized in that a light transmitter (8) and a light sensor (9) are arranged on the bottom of the reactor housing (1), wherein the light transmitter (8) is a through the heating device (4 ) Generates passing light beam which is reflected back from the wide side surface (3 '), the reflected light beam passing through the heating device (4) to the light sensor (9).
14. Verfahren nach einem der Ansprüche 10 bis 13, dadurch gekennzeichnet, dass die Messstrecke (13) durch einen Spalt zwischen zwei Spiralwindun gen einer spiralförmigen Heizeinrichtung (4) verläuft. 14. The method according to any one of claims 10 to 13, characterized in that the measuring section (13) runs through a gap between two Spiralwindun gene of a spiral heating device (4).
15. Vorrichtung oder Verfahren, gekennzeichnet durch eines oder mehrere der kennzeichnenden Merkmale eines der vorhergehenden Ansprüche. 15. Device or method, characterized by one or more of the characterizing features of one of the preceding claims.
PCT/EP2020/066535 2019-06-18 2020-06-16 Apparatus and method for determining and adjusting the inclined position of a susceptor WO2020254270A1 (en)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737663B2 (en) 2002-05-22 2004-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for detecting tilt angle of a wafer platform
US6788991B2 (en) 2002-10-09 2004-09-07 Asm International N.V. Devices and methods for detecting orientation and shape of an object
US20090276097A1 (en) 2008-05-02 2009-11-05 Applied Materials, Inc. Non-contact substrate support position sensing system and corresponding adjustments
DE102009043960A1 (en) * 2009-09-08 2011-03-10 Aixtron Ag CVD reactor
US20160010239A1 (en) 2014-07-11 2016-01-14 Applied Materials, Inc. Apparatus and methods for alignment of a susceptor
DE102016122072A1 (en) 2016-11-10 2018-05-17 Eugenus, Inc. Apparatus and method for adjusting the uniformity of gas flow in a CVD or ALD reactor or a layer deposited therein
US20180366358A1 (en) * 2017-06-14 2018-12-20 Samsung Electronics Co., Ltd. Semiconductor processing equipment alignment apparatus and methods using reflected light measurements
DE202018100363U1 (en) 2018-01-23 2019-04-24 Aixtron Se Device for connecting a susceptor to a drive shaft

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08145645A (en) * 1994-11-28 1996-06-07 Nikon Corp Inclination detector
US6197117B1 (en) * 1997-07-23 2001-03-06 Applied Materials, Inc. Wafer out-of-pocket detector and susceptor leveling tool
US6063196A (en) * 1998-10-30 2000-05-16 Applied Materials, Inc. Semiconductor processing chamber calibration tool
JP5464068B2 (en) * 2010-06-14 2014-04-09 株式会社Ｓｕｍｃｏ Method for adjusting position of internal member in epitaxial growth apparatus
DE102011053498A1 (en) * 2011-09-12 2013-03-14 Aixtron Se Method and device for determining the deformation of a substrate

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737663B2 (en) 2002-05-22 2004-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for detecting tilt angle of a wafer platform
US6788991B2 (en) 2002-10-09 2004-09-07 Asm International N.V. Devices and methods for detecting orientation and shape of an object
US20090276097A1 (en) 2008-05-02 2009-11-05 Applied Materials, Inc. Non-contact substrate support position sensing system and corresponding adjustments
DE102009043960A1 (en) * 2009-09-08 2011-03-10 Aixtron Ag CVD reactor
US20160010239A1 (en) 2014-07-11 2016-01-14 Applied Materials, Inc. Apparatus and methods for alignment of a susceptor
DE102016122072A1 (en) 2016-11-10 2018-05-17 Eugenus, Inc. Apparatus and method for adjusting the uniformity of gas flow in a CVD or ALD reactor or a layer deposited therein
US20180366358A1 (en) * 2017-06-14 2018-12-20 Samsung Electronics Co., Ltd. Semiconductor processing equipment alignment apparatus and methods using reflected light measurements
DE202018100363U1 (en) 2018-01-23 2019-04-24 Aixtron Se Device for connecting a susceptor to a drive shaft

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