CN113994026A - Device and method for determining and adjusting the tilt position of a base - Google Patents

Device and method for determining and adjusting the tilt position of a base Download PDF

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Publication number
CN113994026A
CN113994026A CN202080044240.5A CN202080044240A CN113994026A CN 113994026 A CN113994026 A CN 113994026A CN 202080044240 A CN202080044240 A CN 202080044240A CN 113994026 A CN113994026 A CN 113994026A
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China
Prior art keywords
susceptor
broad side
base
sensor
process chamber
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Pending
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CN202080044240.5A
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Chinese (zh)
Inventor
B.D.赖特
B.奥尼尔
B.R.范韦尔
M.科尔伯格
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Aixtron SE
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Aixtron SE
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Publication of CN113994026A publication Critical patent/CN113994026A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a method for compensating vertical impacts of a susceptor (3), which susceptor (3) is driven in rotation about a rotation axis (5) under substrate processing conditions using an elevated temperature achieved when heating the susceptor (3) with a heating device (4) in a process chamber (2) of a substrate processing reactor, having a sensor device arranged in a stationary manner in a housing (1) of the substrate processing reactor for determining at least one component of the distance to the susceptor (3) parallel to the rotation axis (5), wherein an adjusting mechanism (6, 7) is provided for adjusting the tilt position (11) of a broad side (3') of the susceptor (3) relative to the rotation axis. According to the invention, it is proposed that the distance is determined under process conditions, i.e. in particular at temperatures above 500 ℃. In the device used for this purpose, the measuring section (13) of the sensor device (8, 9) extends through the heating device (4).

Description

Device and method for determining and adjusting the tilt position of a base
Technical Field
The invention relates to a device and a method for determining and compensating for vertical impacts of a susceptor (Suszeptor) which is driven in rotation about a rotational axis under substrate processing conditions in use in a process chamber of a substrate processing reactor at an elevated temperature achieved by heating the susceptor with a heating device, the susceptor having a sensor device arranged in a stationary manner in a housing of the substrate processing reactor for determining at least one component of the distance from the susceptor parallel to the rotational axis, wherein an adjustment mechanism is provided for adjusting the tilting position of a broad side of the susceptor.
Background
US 2009/0276097 a1 describes a substrate processing device in which the tilt position of the susceptor should be determined by means of an optical sensor. The position of the base should be adjusted during the rotation of the base. The optical sensor is outside the process chamber. The beam passes through the quartz dome.
US 2016/0010239 a1 describes a substrate treatment reactor having a susceptor which has a disc shape and which can be rotationally driven about the axis of a drive column by the drive column. Means are provided for adjusting the post.
US 6,737,663B 2 discloses a device for measuring the inclination of a flat surface of a machine relative to a reference plane, wherein a laser beam is generated by a laser and received by an optical receiver. The laser beam is reflected on the surface whose inclination should be determined.
US 6,778,991B 2 discloses an apparatus for determining the exact position of a substrate in a substrate processing apparatus.
A substrate treatment reactor is known from DE 102016122072 a1, in which the susceptor can be driven in rotation about an axis of rotation. The position of the susceptor in the center of the process chamber of the substrate processing reactor can be adjusted by means of the control arm.
DE 202018100363.1 discloses a load-bearing top which can be mounted on a column which can be driven in rotation. The bearing top is provided with a bearing plate which also bears the base. The carrier plate can be adjusted in inclination relative to the flange that secures the top to the column.
Disclosure of Invention
The object of the invention is to provide a device which makes it possible to place the wide side of a susceptor, above which a process chamber with a non-transparent process chamber cover is arranged, into a plane of rotation.
The above-mentioned object is achieved by the invention according to the claims, wherein the dependent claims are not only advantageous developments of the dependent claims, but also independent solutions to the above-mentioned object.
First and basically it is suggested to bring the substrate treatment reactor to the substrate treatment temperature by heating the susceptor with a heating device. At least one sensor device with a sensor is provided, which is connected in a stationary manner to the housing of the substrate treatment reactor. According to the invention, this sensor device is able to determine the distance between the sensor device and the broad side of the base. In particular, it is provided that the sensor device is able to determine a vector component of the distance that extends parallel to the axis of rotation. According to the invention, the distance should be determined under process conditions, i.e. at process temperatures exceeding 500 ℃. Furthermore, it is provided that the distance is determined continuously during the rotation of the base about its axis of rotation. This is achieved according to the invention in that the light generated by the light transmitter, for example a laser, is reflected on the broad side of the base. The reflected light signal is received by the light sensor. The distance over which the light passes from the light transmitter to the light sensor can be determined in a known manner by means of a running time measurement or a phase determination. The reflection point of the light or the irradiation point of the laser beam onto the broad side of the base is preferably maximally spaced from the rotation axis of the base in the radial direction. According to one variant of the invention, a large number of measurements are carried out during the rotation of the base, so that a large number of measurement points are determined. The measured distance values of the base with the impact in the vertical direction show a sinusoidal course relative to the ideal plane of rotation. From this course of the distance values, a correction value can be determined in order to bring the broad side on which the measurement was carried out or a broad side different therefrom into the plane of rotation by means of the adjusting mechanism, the relative inclination of which broad side to the broad side on which the measurement was carried out is known. The invention relates in particular to a device having a heating device by means of which the side of the susceptor pointing away from the process chamber can be heated. Preferably, it is provided that the wide side of the susceptor pointing toward the process chamber is to be placed in the plane of rotation by adjustment of the adjustment mechanism. The process chamber has a process chamber cover which is not rotated, but is fixed in position, and which has been brought into a plane parallel to the plane of rotation by means of a further adjustment element. If the broad side of the susceptor pointing towards the process chamber is placed in the plane of rotation, said broad side extends parallel to the underside of the process chamber cover. This achieves the object of the invention that the process chamber height, i.e. the distance between the, in particular upwardly directed, broad side of the base and the, in particular downwardly directed, broad side of the process chamber cover, is the same throughout the process chamber. The process chamber preferably has a gas inlet means by means of which process gas can be supplied into the process chamber. The process gas may be a metal organic compound of main group III or IV of the periodic table. In addition, mixtures of the III or IV main groups can be considered as process gases, so that an IV-IV semiconductor layer or a III-V semiconductor layer can be deposited on a substrate which is arranged on the broad side of the susceptor pointing into the process chamber. In particular, it is provided that the broad side of the susceptor pointing towards the process chamber has recesses into which the substrate carriers with one or more substrates are inserted in each case. The substrate carrier can be supported in a known manner on an air cushion, wherein the air cushion is generated by an air flow which also rotates the substrate carrier about its axis. The gas supply of the gas cushion is performed through a column that rotationally drives the base. In one variant of the invention, it is provided that the broad side of the susceptor pointing away from the process chamber is heated by a heating device. The heating device may be an IR heating device, an RF heating device, or other energy source through which heating power is input to the susceptor to place the susceptor at the process temperature. According to a variant of the invention, it is provided that the measuring section between the sensor device and the broad side of the base extends through the heating device. It can be provided that the sensor device is an optical sensor device and that the light beam extends through a heating spiral of the heating element. The heating spiral may be implemented by an RF antenna. The heating spiral may be formed by a hollow body, the hollow of which is flowed through by a cooling medium. In one variant of the invention, it is provided that the adjustment of the inclination position is effected at room temperature, for example, by using an adjustment tool acting on the threaded element. The threaded element may for example be formed by a bolt which can be rotated by a screwdriver or other screwing tool. These bolts can be operated, for example, as shown in DE 202018100363.1 through the central opening of the base. The disclosure of DE 202018100363.1 is therefore fully incorporated into the disclosure of the present application, in particular for accommodating the features disclosed therein in the claims. In an embodiment of the invention, it is provided that the adjustment of the tilt position can be carried out at elevated temperatures. For this purpose, it can be provided that the adjusting mechanism, which can likewise have a threaded element, can be operated from outside the reactor housing. Alternatively, however, an actuator may also be provided, for example a servomotor, by means of which the adjusting mechanism can be actuated in order to electrically adjust the tilt angle. The servo motor may be fixedly connected to a column that rotationally drives the base. The actuators can, for example, rotate screws, which each have an external thread, wherein the external threads each engage in a screw nut, which is mounted on the adjusting head of the carrier base. The device preferably has a control device in the form of a controller, which obtains distance data from the sensor device. The controller may obtain information on a rotation angle of the base from a rotation driver that rotates the column. The controller can calculate from these data correction data, by means of which the adjustment mechanism must be adjusted by means of an actuator or in some other way in order to bring the broad side of the base into the plane of rotation. Even if the distance measurement is carried out on the lower broad side of the susceptor pointing away from the process chamber, the broad side pointing towards the process chamber is preferably placed in the plane of rotation. In the correction, deviations from the parallelism of the two broad sides can be taken into account. The height of the process chamber is preferably at most 40 mm. The process chamber height is preferably in the range of 20 to 25mm, wherein the diameter of the susceptor is at least 600 mm. The diameter may be between 500 and 700 mm.
The heating device is preferably formed by a helical body, in particular a helical antenna. The antenna may generate an alternating electromagnetic field that generates eddy currents in the electrically conductive base that heat the base to at least 500 ℃. An optical transmitter arranged on the bottom of the reactor housing generates an optical beam which passes through the heating device and in particular through the gap between the two spiral windings to the underside of the susceptor. Where the light beam is diffusely reflected. The reflected light beam reaches the light sensor through the same gap or a different gap between the two spiral windings.
Drawings
Embodiments of the present invention are explained below with reference to the drawings. In the drawings:
FIG. 1 shows a cross-section taken through an embodiment of a CVD reactor.
Detailed Description
FIG. 1 shows a cross-section taken through a substrate treatment reactor to illustrate the main elements according to the invention.
Fig. 1 shows a reactor shell 1, which is a gas tight refined steel shell. Inside the housing there is a base 3, which base 3 may be a disc-shaped graphite part, a ceramic part or a metal part. The base 3 forms with the broad side 3 ″ a lower boundary surface of the process chamber 2, which is delimited upward by the underside 14' of the cover 14. The cover plate 14 may be made of graphite, ceramic material, or the like and may be positionally adjusted. The cover 14 is preferably positioned such that its underside 14 extends perpendicularly to the axis of rotation 5. The cover plate 14 is associated with the housing in a stationary manner. The cover plate is in particular not rotatable.
Along the axis of rotation 5, an intake device 17 is provided, which has a plurality of gas supply lines in order to be able to supply mutually different process gases together with the carrier gas into the process chamber 2. The process chamber lid 14 may be carried by an air intake mechanism 17. The lower section of the air inlet means 17 can be inserted into the recess of the base 3.
The base 3 is carried by a carrying top 22 along the rotation axis 5. With the interposition of the elastic seal 23, the bearing top 22 rests on the column 18, which can be rotatably driven by the rotary drive 19, supported in the rotary bearing 21.
Gas lines, which are only schematically illustrated in the drawing, extend in the column 18, extend through the seal 23 and the carrier head 22 into the susceptor 3, where they open into a recess in which the substrate carriers 15, which in each case carry one or more substrates 16, are present. Through these gas supply lines, a carrier gas flow can be guided, which can rotationally drive the substrate carrier 15 about its axis in a known manner. The broad side 3 ″ of the susceptor 3 pointing toward the process chamber 2 is opposite the broad side 3' pointing toward the heating device 4. The heating device 4 is formed in the present embodiment by a helical antenna which generates an alternating electromagnetic field which generates eddy currents in the electrically conductive base 3, by means of which the base is heated.
Sensor means 8,9 are provided which are fixed relative to the housing. In the present embodiment, the sensor devices 8,9 are connected to the bottom of the reactor shell 1. The swivel bearing 21 or the swivel drive 19 is also connected to the reactor housing 1, so that the swivel axis 5 extends fixedly relative to the housing, and the column 18 or the base 3 can be driven in rotation about said swivel axis 5. The distance a between the broad side 3' and the sensor device 8,9 can be measured by the sensor device 8, 9. This is preferably done during rotation of the base 3 about the axis of rotation 5. The measured values obtained by the sensor devices 8,9 are stored in the controller 10. The controller 10 obtains angular information about the rotational position of the base 3, for example from the rotation drive 19, so that by analyzing these data the tilt position 11 of the broad side 3' of the base 3 can be determined. In the present embodiment, the elements of the sensor device 8,9 are fixedly connected with the underside of the housing 1, so that the distance a is the distance between the radially outer region of the underside 3' of the base 3 and the housing. If the susceptor 3 has a vertical directional impact, the distance a periodically changes when the susceptor 3 rotates.
The aim of the invention is to keep the height h between the broad side 3 "pointing towards the process chamber 2 and the underside 14' of the cover plate 14 the same at any position on the broad side 3". The two faces 3 "and 14' should extend parallel to each other.
The inclination of the broad side 3 ″ relative to the underside 14' of the cover 14 can therefore be determined from the above-mentioned measurement data.
Adjustment means 6,7 are provided, by means of which the tilt position 11 can be adjusted. The adjusting means 6,7 may be adjusting means which can be operated only when the reactor shell 1 is open, for example adjusting means as disclosed in DE 202018100363.1.
In the present embodiment, the tilt position 11 can be adjusted not only in the cooling state of the susceptor 3 but also under substrate processing conditions. For this purpose, an electrically operable actuator 12 is provided, which is arranged in an actuator housing 20, which is fixedly connected to the column 18, i.e. can rotate together with the column 18. The actuator 12 can drive the threaded spindle 6 with an external thread in a rotating manner, wherein the actuator 12 can be a stepping motor, by means of which also small angular adjustments can be made. The bearing head has a spindle nut 7 with an internal thread into which the external thread of the spindle 6 engages. Therefore, the tilt position 11 can be adjusted by the rotation angle adjustment of the screw 6.
The sensor devices 8,9 preferably have an optical transmitter 8, which may preferably be a laser. The laser generates a laser beam which extends along the measuring section 13 towards the broad side 3 "of the base 3. The light beam reflected by the broad side surface reaches the light sensor 9, so that the distance a can be determined by the light transmitter 8 and the light sensor 9. The optical transmitter 8 generates an optical beam directed to the broad side 3'. Where the light beam reaches a radially outer region of the base 3. The light beam generates a light emitting region. The light emitted by the light emitting region reaches the light sensor 9. In the figure, the optical transmitter 8 and the optical sensor 9 are shown spaced apart from each other. In an embodiment not shown, the light transmitter 8 and the light sensor 9 are formed by a common housing, so that the light beam emitted by the light transmitter substantially coincides with the light beam received by the light sensor 9.
The preceding description is intended to illustrate the invention covered by the present application in its entirety, which improves the state of the art at least in each case independently of one another by the following feature combinations, wherein two, more or all of these feature combinations can also be combined, namely:
a method, characterized in that the distance is determined under process conditions.
A method, characterized in that the elevated temperature is at least 500 ℃.
A method is characterized in that the adjustment of the tilt position 11 is performed at a reduced temperature, in particular at room temperature.
A method is characterized in that the vertical impact is determined by means of an optical sensor device.
A method is characterized in that the controller 10 determines a correction value from the distance values recorded during the rotation of the base 3 about its axis of rotation 5, by means of which the adjusting means 6,7 are adjusted.
A method is characterized in that the tilt position 11 is adjusted in the presence of an elevated temperature.
A method is characterized in that the adjusting means 6,7 have a threaded element and the correction value is a rotation angle for adjusting the threaded element.
A device, characterized in that the measuring section 13 of the sensor device 8,9 extends through the heating device 4.
A device is characterized in that the sensor devices 8,9 have optical sensors 9 and in particular measure the distance between the broad side of the base 3 directed toward the heating device 4 and the sensor devices 8, 9.
A device, characterised in that the adjusting means 6,7 have a screw element.
An apparatus is characterized in that the adjusting mechanisms 6,7 can be adjusted by an electrically operated actuator 12 under substrate processing conditions.
An apparatus is characterized by a control device 10, which provides a correction value on the basis of the distance value determined by the sensor, with which the tilt position 11 of the susceptor 3 is changed manually or dynamically during substrate processing.
A method is characterized in that distance values are determined at least three rotational positions of the base 3, which distance values are used as grid points for calculating a sine function, by means of which a correction value is calculated in order to minimize the inclination of the broad side of the base 3 pointing to the process chamber 2 relative to the plane of rotation of the base 3.
Device, characterized in that the broad side 3 'of the base 3, which is directed toward the process chamber 2, is opposite a process chamber cover, which extends parallel to the plane of rotation and is at most 40mm distant from the broad side 3', 3 ″ of the base 3.
All the disclosed features are essential to the invention both by themselves and in combination with one another. Accordingly, the disclosure of the accompanying/appended priority documents (copies of the prior application) is also fully included in the disclosure of the present application, as is the use of such documents to incorporate the features of the claims of this application. The dependent claims characterize independent inventive developments of the prior art, even without the features of the cited claims, in particular for the divisional application based on these claims. The invention described in each claim may additionally have one or more features which have been described in the preceding description, in particular with reference numerals and/or in the list of reference numerals. The invention also relates to embodiments in which individual features mentioned in the preceding description are not implemented, in particular if these features are clearly not necessary for the respective application purposes or can be replaced by other technically equivalent means.
List of reference numerals
1 reactor shell
2 Process Chamber
3 base
3' wide side
3' wide side
4 heating device
5 axis of rotation
6 adjustment mechanism and screw rod
7 adjusting mechanism and screw nut
8 optical transmitter
9 optical sensor
10 controller
11 inclined position
12 actuator
13 measuring section
14 cover plate
14' underside
15 matrix carrier
16 matrix
17 air inlet mechanism
18 column
19 Rotary drive
20 adjustment drive housing
21 swivel bearing
22 load bearing roof
23 seal

Claims (15)

1. A device having a substrate treatment reactor with a susceptor (3) which can be driven in rotation about a rotation axis (5) in a housing (1),
the substrate treatment reactor is delimited at a first broad side (3 ') by a lower boundary surface of a process chamber (2) which is delimited upwards by an underside (14') of a cover plate (14),
wherein a process gas can be fed into the process chamber (2) by means of a gas inlet means (17) arranged along the axis of rotation (5),
wherein a second broad side (3 ') opposite the first broad side (3') is directed to a heating device (4) formed by a helical antenna, with which the base (3) can be heated,
characterized by a sensor device (8, 9) connected to the bottom of the reactor housing (1), by means of which sensor device the distance (a) between the second broad side (3') and the sensor device (8, 9) can be measured under process conditions during rotation of the susceptor (3) about the axis of rotation (5) and heating of the susceptor (3) to at least 500 ℃,
wherein a measuring section between the sensor device (8, 9) and the broad side (3') extends through the heating device (4).
2. Device according to claim 1, characterized by an adjusting mechanism (6, 7) for changing the tilting position (11) of the first broad side (3 ") of the base (3).
3. Device according to claim 2, characterized in that the adjusting means (6, 7) have a threaded element.
4. A device according to claim 2 or 3, characterized by a control device (10), which provides a correction value on the basis of the distance value determined by the sensor, with which correction value the tilting position (11) of the susceptor is changed manually or dynamically during the substrate treatment.
5. Device according to one of the preceding claims, characterized in that distance values are determined at least three rotational positions of the base (3), which distance values are used as grid points for calculating a sine function, by means of which a correction value is calculated in order to minimize the inclination of the wide side (3') of the base (3) pointing towards the process chamber (2) with respect to the rotational plane of the base (3).
6. Device according to one of the preceding claims, characterized in that the distance between the process chamber cover and the broad side (3') of the base (3) is at most 40 mm.
7. Device according to one of the preceding claims, characterized in that the sensor device (8, 9) has a light transmitter (8) which generates a laser beam extending along the measuring section (13) and a light sensor (9) which receives the light beam reflected by the broad side (3 ").
8. The device according to claim 7, characterized in that the light transmitter (8) and the light sensor (9) are arranged in a common housing such that the light beam emitted by the light transmitter (8) substantially coincides with the light beam received by the light sensor (9).
9. Device according to one of the preceding claims, characterized in that the measuring section (13) extends through a gap between two spiral windings of the spiral-shaped heating device (14).
10. Method for determining or compensating for vertical impacts of a susceptor (3), which susceptor (3) is used in a process chamber (2) of a substrate processing reactor under substrate processing conditions, wherein the susceptor (3) is heated to at least 500 ℃ by means of a heating device (4) and is rotationally driven about a rotational axis (5), having a sensor device (8, 9) which is arranged stationary in a housing (1) of the substrate processing reactor and by means of which at least one component parallel to the rotational axis (5) of a distance (a) between a broad side (3 ') of the susceptor (3) and the sensor device (8, 9) is measured during rotation of the susceptor (3) about the rotational axis (5), wherein an adjusting mechanism (6, 7) is provided for adjusting the phase of the broad side (3 ') of the susceptor (3) which is directed to a cover plate (14) of the process chamber (2), wherein the adjusting mechanism (6, 7) is provided for adjusting the phase of the broad side (3 ') of the susceptor (3) -an inclined position (11) with respect to the axis of rotation, characterized in that the measuring section of the sensor device (8, 9) extends through the heating device (4).
11. Method according to claim 10, characterized in that the tilting position (11) of the susceptor (3) is changed during the substrate treatment manually or automatically.
12. Method according to claim 10 or 11, characterized in that distance values are determined in at least three rotational positions of the base (3) and are used as grid points for the calculation of a sine function, by means of which a correction value is calculated, by means of which the inclination of the broad side (3 ") of the base (3) pointing to the process chamber (2) relative to the rotational plane of the base (3) is minimized.
13. Method according to one of claims 10 to 12, characterized in that a light transmitter (8) and a light sensor (9) are arranged on the bottom of the reactor housing (1), wherein the light transmitter (8) generates a light beam which is irradiated through the heating device (4), which light beam is reflected by the broad side (3'), wherein the reflected light beam reaches the light sensor (9) through the heating device (4).
14. Method according to one of claims 10 to 13, characterized in that the measuring section (13) extends through a gap between two spiral windings of the spiral-shaped heating device (4).
15. An apparatus or method characterised by the features of one or more of the characterising parts as set forth in any one of the preceding claims.
CN202080044240.5A 2019-06-18 2020-06-16 Device and method for determining and adjusting the tilt position of a base Pending CN113994026A (en)

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Application Number Priority Date Filing Date Title
DE102019116460.5 2019-06-18
DE102019116460.5A DE102019116460A1 (en) 2019-06-18 2019-06-18 Device and method for determining and setting the inclination position of a susceptor
PCT/EP2020/066535 WO2020254270A1 (en) 2019-06-18 2020-06-16 Apparatus and method for determining and adjusting the inclined position of a susceptor

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