WO2020244029A1 - Led display structure - Google Patents

Led display structure Download PDF

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Publication number
WO2020244029A1
WO2020244029A1 PCT/CN2019/096294 CN2019096294W WO2020244029A1 WO 2020244029 A1 WO2020244029 A1 WO 2020244029A1 CN 2019096294 W CN2019096294 W CN 2019096294W WO 2020244029 A1 WO2020244029 A1 WO 2020244029A1
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Prior art keywords
light
chip
substrate
led
emitting
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PCT/CN2019/096294
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French (fr)
Chinese (zh)
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龚文
邵鹏睿
张雨晨
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深圳市晶台股份有限公司
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Priority to KR1020207013031A priority Critical patent/KR20200141020A/en
Publication of WO2020244029A1 publication Critical patent/WO2020244029A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements

Definitions

  • the utility model relates to the technical field of semiconductor light emitting devices, in particular to an LED display structure.
  • the chip size is a key technical problem to solve the size miniaturization.
  • existing chips when designing lamp beads or display devices, it is necessary to reserve the positions of the three chips and the reserved chip spacing to avoid the accuracy of the die-bonding machine. It is difficult to continue to reduce the size significantly.
  • the utility model can greatly reduce the chip size by using the integrated LED chip. Only one chip is needed, and the chip has multiple independently controlled light-emitting points, which can effectively reduce the LED display pitch, increase the display density, and improve the display quality.
  • An LED display structure includes a substrate, the substrate is provided with a pad, an LED integrated chip is arranged on the pad, the LED integrated chip includes a plurality of independently controlled light-emitting points, and the electrodes of the LED integrated chip
  • the circuit of the substrate is conducted through the bonding wire, the top of the light-emitting dot is provided with a quantum dot layer, and the top of the quantum dot layer is provided with a filter layer.
  • the light-emitting dot and the quantum dot layer And the light-emitting unit composed of the filter layer is packaged.
  • the substrate contains multiple light-emitting units, and each light-emitting unit is equipped with an LED integrated chip.
  • An LED integrated chip contains multiple light-emitting points, which reduces the distance of LED display.
  • quantum dots are sprayed on the light-emitting points on the chip.
  • the quantum dot layer is used to obtain light of different colors.
  • a filter layer is set on the outside of the quantum dot layer to absorb the light of the excitation light source band to improve the quality of the light source and display quality.
  • an encapsulant is molded externally for chips and quantum
  • the dots and internal circuits provide an application environment for isolating water and oxygen and realize high-density LED display.
  • the LED integrated chip includes a front-mounted chip, a flip-chip or a vertical chip.
  • the LED integrated chip has a common pole or non-common pole structure.
  • the distance between the plurality of light-emitting points is 2-50um.
  • the distance between the several light-emitting points is 26um.
  • the distance between multiple light-emitting points on the same LED integrated chip is set reasonably, and the distance is set to 2-50um, which is very small.
  • the existing LED light uses a single chip and a single light-emitting point, which is compared with LED integrated chips. Not only is there two more chips, but also a spacing to solve the die-bonding error is required. Therefore, this design greatly reduces the display spacing between the LEDs to make the light more dense.
  • the spacing is optimally set to 26um to avoid neighboring
  • the luminous range between the two luminous points of the luminescent point covers each other, ensuring that the luminous range is fully utilized to the greatest extent while maintaining close contact with a very small distance, saving design costs and optimizing the luminous effect.
  • the substrate includes a cup-bowl type substrate, a flat-plate type array light-emitting unit substrate, a multilayer circuit substrate, and a multilayer circuit array light-emitting unit substrate with a driving IC.
  • the filter layer includes a filter film.
  • the outside of the quantum dot layer is covered with a commercially available filter film, and the light-emitting points of different colors cover the filter film of different colors.
  • Figure 1 is a schematic diagram of the structure of the utility model
  • Fig. 2 is a schematic top view of the application of a common-polar form factor chip in the utility model
  • Fig. 3 is a schematic top view of the application of a non-common electrode type formal chip in the utility model
  • Figure 4 is a schematic top view of the vertical chip applied to the utility model
  • Figure 5 is a schematic top view of flip-chip applications in the present utility model
  • an LED display structure includes a substrate 1 with a circuit, the substrate 1 is provided with a pad, and an LED integrated chip 2 is fixed on the pad by die-bonding glue.
  • the LED integrated chip 2 contains 3 independent controls.
  • the light-emitting points 3 are red, green, and blue light-emitting points 3 respectively.
  • the electrodes of the LED integrated chip 2 are connected to the circuit of the substrate 1 through the bonding wire, and the top of each light-emitting point 3 is sprayed with different colors
  • the quantum dots form the corresponding red light quantum dot layer, green light quantum dot layer and blue light quantum dot layer to obtain light of different colors.
  • the top of each quantum dot layer 4 is covered with a filter layer 5 of corresponding color.
  • the substrate 1 contains multiple light-emitting units, and each light-emitting unit is equipped with an LED integrated chip 2.
  • One LED integrated chip 2 contains multiple light-emitting points 3, and at the same time, quantum dots are sprayed on the light-emitting points 3 on the chip to form quantum dots.
  • Layer 4 to obtain light of different colors.
  • a filter layer 5 is provided on the outside of the quantum dot layer 4 to absorb the light of the excitation light source and improve the quality of the light source and display quality.
  • an encapsulant 6 is molded on the outside as a chip , Quantum dots and internal circuits provide an application environment for isolating water and oxygen, realizing high-density LED display.
  • the distance between multiple light-emitting points 3 on the same LED integrated chip 2 is set reasonably, and the distance is set to 2-50um, which is very small.
  • the existing LED light uses a single chip with a single light-emitting point. Compared with the LED integrated chip, it not only has two more chips, but also needs to reserve a distance to solve the die-bonding error. Therefore, the design greatly reduces the display distance between the LEDs and makes the light emission more dense.
  • the optimal setting is 26um to avoid the light-emitting range between the two adjacent light-emitting points 3 from covering each other, to ensure that the light-emitting range is fully utilized to the maximum extent while maintaining close contact with extremely small spacing, saving design costs and optimizing the light-emitting effect.
  • the quantum dot layer 4 is divided into a red light quantum dot layer, a green light quantum dot layer, and a blue light quantum dot layer.
  • the red light quantum dot layer is mixed with light that can be excited by the light emitted by the LED integrated chip to produce a wavelength of 615-680nm.
  • the light red light quantum dot material is silica gel or epoxy glue
  • the green light quantum dot layer is mixed with the green light quantum dot material that can be excited by the light emitted by the LED integrated chip to produce green light with a wavelength of 518-580nm.
  • the quantum dot layer is silica gel or epoxy glue mixed with blue quantum dot materials that can be excited by the light emitted by the LED integrated chip to produce blue light with a wavelength of 420-480 nm.
  • the substrate 1 includes a cup-bowl type substrate, a flat-plate type substrate, a multilayer circuit array light-emitting unit substrate, and a multilayer circuit array light-emitting unit substrate with a driver IC.
  • the LED integrated chip 2 includes a face-mounted chip, a flip-chip or a vertical chip, and the LED integrated chip has a common pole or non-common pole structure.
  • this embodiment is similar to Embodiment 1, except that the LED integrated chip adopts the common-polar form chip 7 for display application. It can be seen that the three light-emitting elements of the common-pole form Each point is provided with a cathode electrode and shares an anode electrode. The three cathode electrodes and one anode electrode are all connected to the circuit pins of the substrate 1 through bonding wires.
  • this embodiment is similar to embodiment 1, except that the LED integrated chip adopts non-common-polar formal mounting chip 8 for display application. It can be seen that three of the non-common-polar formal mounting chip 8 Each light-emitting point is provided with a cathode electrode and an anode electrode, and the three cathode electrodes and the three anode electrodes are all connected to the circuit pins of the substrate 1 through bonding wires.
  • this embodiment is similar to embodiment 1, except that the LED integrated chip adopts a vertical chip 9 for display applications. It can be seen that each of the three light-emitting points of the vertical chip 9 is provided with one
  • the bottom of the cathode electrode is made of a metal material as the anode electrode and the circuit pad is welded, and the cathode electrode is connected to the circuit pin of the substrate 1 through the bonding wire.
  • the LED integrated chip adopts the flip chip 10 for display applications.
  • the flip chip 10 includes a common pole type and a non-common pole type.
  • the common pole type flip chip is the same as the common pole type in the second embodiment.
  • the structural sequence of the front-mounted chip 7 is reversed, and the structural sequence of the non-common-polarized flip-chip 8 in the embodiment 3 is reversed.
  • a common-polarized flip-chip or a non-common-polarized flip-chip is installed , Both the cathode and anode electrodes are connected to the pads of the substrate 1 by soldering, so that the electrode and the circuit connection of the substrate 1 are connected.
  • both electrodes It is in direct solder contact with the substrate 1, and its top surface has the same structure. Therefore, when a common pole flip chip or a non-common pole flip chip is mounted on the substrate 1, the top view is the same, that is, as shown in Figure 5, either It shows a top view of a common pole flip chip applied on the substrate 1, and may also show a top view of a non-common pole flip chip applied on the substrate 1.

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

The invention relates to the technical field of semiconductor light-emitting devices, and particularly relates to an LED display structure comprising a substrate. A pad is provided on the substrate. An LED integrated chip is provided on the pad, and includes several independently controlled light-emitting dots. An electrode of the LED integrated chip is connected to a circuit of the substrate by means of a bonding wire. A quantum dot layer is provided on the top of each light-emitting dot, a filter layer is provided on the top of the quantum dot layer, and a light-emitting unit consisting of the light-emitting dot, the quantum dot layer, and the filter layer is encapsulated by means of a packaging adhesive. The use of the integrated LED chip can greatly reduce the chip size. Since only one chip having multiple independently controlled light-emitting dots is required, the pitch of the LED display can be effectively reduced, and the display density and the display quality can be improved.

Description

一种LED显示结构An LED display structure 技术领域Technical field
本实用新型涉及半导体发光器件技术领域,特别是涉及一种LED显示结构。The utility model relates to the technical field of semiconductor light emitting devices, in particular to an LED display structure.
背景技术Background technique
随着LED的应用场景的不断丰富,人们对LED的性能尺寸要求越来越高,LED显示器件,正朝着高密度、高分辨率的方向不断发展。芯片尺寸是解决尺寸小型化的关键技术问题。使用现有芯片,在灯珠或显示器件设计时,需预留线三个芯片的位置和避免固晶机台精度问题预留的芯片间距,尺寸很难继续大幅度减小。With the continuous enrichment of LED application scenarios, people have higher and higher requirements for the performance and size of LEDs, and LED display devices are constantly developing in the direction of high density and high resolution. The chip size is a key technical problem to solve the size miniaturization. With existing chips, when designing lamp beads or display devices, it is necessary to reserve the positions of the three chips and the reserved chip spacing to avoid the accuracy of the die-bonding machine. It is difficult to continue to reduce the size significantly.
实用新型内容Utility model content
本实用新型通过使用集成式的LED芯片,可以极大减少芯片尺寸,只需一个芯片,其具有多个独立控制的发光点,可有效的降低LED显示的间距,提高显示密度,提升显示质量。The utility model can greatly reduce the chip size by using the integrated LED chip. Only one chip is needed, and the chip has multiple independently controlled light-emitting points, which can effectively reduce the LED display pitch, increase the display density, and improve the display quality.
本实用新型的技术方案为:The technical scheme of the utility model is:
一种LED显示结构,包括基板,所述基板设有焊盘,所述焊盘上设有LED集成芯片,所述LED集成芯片包含有若干个独立控制的发光点,所述LED集成芯片的电极通过键合线与所述基板的电路导通,所述发光点的顶部设有量子点层,所述量子点层的顶部设有滤光层,利用封装胶将所述发光点、量子点层和滤光层组成的发光单元进行封装。An LED display structure includes a substrate, the substrate is provided with a pad, an LED integrated chip is arranged on the pad, the LED integrated chip includes a plurality of independently controlled light-emitting points, and the electrodes of the LED integrated chip The circuit of the substrate is conducted through the bonding wire, the top of the light-emitting dot is provided with a quantum dot layer, and the top of the quantum dot layer is provided with a filter layer. The light-emitting dot and the quantum dot layer And the light-emitting unit composed of the filter layer is packaged.
基板上包含有多个发光单元,每个发光单元内均放置LED集成芯片,一个LED集成芯片包含多个发光点,降低了LED显示的间距,同时在芯片上的发光点上分别喷涂量子点形成量子点层,以获取不同颜色的光,在量子点层的外部设置滤光层,用于吸收激发光源波段的光,提升光源质量和显示质量,最后在外部模造有封装胶,为芯片、量子点和内部线路提供隔离水氧的应用环境,实现LED高密度显示。The substrate contains multiple light-emitting units, and each light-emitting unit is equipped with an LED integrated chip. An LED integrated chip contains multiple light-emitting points, which reduces the distance of LED display. At the same time, quantum dots are sprayed on the light-emitting points on the chip. The quantum dot layer is used to obtain light of different colors. A filter layer is set on the outside of the quantum dot layer to absorb the light of the excitation light source band to improve the quality of the light source and display quality. Finally, an encapsulant is molded externally for chips and quantum The dots and internal circuits provide an application environment for isolating water and oxygen and realize high-density LED display.
进一步,所述LED集成芯片包括正装芯片、倒装芯片或垂直芯片。Further, the LED integrated chip includes a front-mounted chip, a flip-chip or a vertical chip.
进一步,所述LED集成芯片为共极或非共极结构。Further, the LED integrated chip has a common pole or non-common pole structure.
进一步,若干个所述发光点之间的间距为2-50um。Further, the distance between the plurality of light-emitting points is 2-50um.
优选地,若干个所述发光点之间的间距为26um。Preferably, the distance between the several light-emitting points is 26um.
对同一LED集成芯片上的多个发光点之间的间距合理设置,设置间距为2-50um,间距非常小,而现有的LED发光是采用单个芯片单个发光点,其相比LED集成芯片,不仅多了两个芯片,还需预留出解决固晶误差的间距,所以本设计大大缩小了LED之间的显示间距,使其发光更密集,同时,间距进行最优设置为26um,避免邻近的两个发光点之间的发光范围相互覆盖,保证在最大程度上充分利用发光范围的同时保持间距极小的紧密接触,节省设计成本,优化发光效果。The distance between multiple light-emitting points on the same LED integrated chip is set reasonably, and the distance is set to 2-50um, which is very small. However, the existing LED light uses a single chip and a single light-emitting point, which is compared with LED integrated chips. Not only is there two more chips, but also a spacing to solve the die-bonding error is required. Therefore, this design greatly reduces the display spacing between the LEDs to make the light more dense. At the same time, the spacing is optimally set to 26um to avoid neighboring The luminous range between the two luminous points of the luminescent point covers each other, ensuring that the luminous range is fully utilized to the greatest extent while maintaining close contact with a very small distance, saving design costs and optimizing the luminous effect.
进一步,所述基板包括杯碗型基板、平板型阵列发光单元基板、多层线路基板和带驱动IC的多层线路阵列发光单元基板。Further, the substrate includes a cup-bowl type substrate, a flat-plate type array light-emitting unit substrate, a multilayer circuit substrate, and a multilayer circuit array light-emitting unit substrate with a driving IC.
进一步,所述滤光层包括滤光膜。量子点层外部覆盖上市售的滤光膜,不同颜色的发光点覆盖不同颜色的滤光膜。Further, the filter layer includes a filter film. The outside of the quantum dot layer is covered with a commercially available filter film, and the light-emitting points of different colors cover the filter film of different colors.
附图说明Description of the drawings
图1是本实用新型的结构示意图;Figure 1 is a schematic diagram of the structure of the utility model;
图2是共极式正装芯片应用在本实用新型的俯视示意图;Fig. 2 is a schematic top view of the application of a common-polar form factor chip in the utility model;
图3是非共极式正装芯片应用在本实用新型的俯视示意图;Fig. 3 is a schematic top view of the application of a non-common electrode type formal chip in the utility model;
图4是垂直芯片应用在本实用新型的俯视示意图;Figure 4 is a schematic top view of the vertical chip applied to the utility model;
图5是倒装芯片应用在本实用新型的俯视示意图;Figure 5 is a schematic top view of flip-chip applications in the present utility model;
图中:1-基板、2-LED集成芯片、3-发光点、4-量子点层、5-滤光层、6-封装胶、7-共极式正装芯片、8-非共极式正装芯片、9-垂直芯片、10-倒装芯片。In the picture: 1-substrate, 2-LED integrated chip, 3-light-emitting point, 4-quantum dot layer, 5-filter layer, 6-encapsulation glue, 7-common-polar formal mounting chip, 8-non-common-polar formal mounting Chip, 9-vertical chip, 10-flip chip.
具体实施方式Detailed ways
附图仅用于示例性说明,不能理解为对本专利的限制;为了更好说明本实施例,附图某些部件会有省略、放大或缩小,并不代表实际产品的尺寸;对于本领域技术人员来说,附图中某些公知结构及其说明可能省略是可以理解的。附图中描述位置关系仅用于示例性说明,不能理解为对本专利的限制。The attached drawings are only for illustrative purposes and cannot be understood as a limitation of this patent; in order to better illustrate this embodiment, some parts of the attached drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product; It is understandable for the personnel that some well-known structures in the drawings and their descriptions may be omitted. The positional relationship described in the drawings is only for illustrative purposes and cannot be understood as a limitation of the patent.
实施例1:Example 1:
如图1所示,一种LED显示结构,包括带电路的基板1,基板1设有焊盘,焊盘上通过固晶胶固定有LED集成芯片2,LED集成芯片2包含有3个独立控制的发光点3,分别为红、绿、蓝三种颜色的发光点3,LED集成芯片2的电极通过键合线与基板1的电路导通,每个发光点3的顶部分别喷涂不同颜色的量子点形成对应的红光量子点层、绿光量子点层和蓝光量子点层,以获取不同颜色的光,每个量子点层4的顶部均覆盖有对应颜色的滤光层5,滤光层5包括市售的滤光膜,最后利用封装胶6将发光点3、量子点层4和滤光层5组成的发光单元进行封装,为芯片、量子点和内部线路提供隔离水氧的应用环境,实现LED高密度显示。As shown in Figure 1, an LED display structure includes a substrate 1 with a circuit, the substrate 1 is provided with a pad, and an LED integrated chip 2 is fixed on the pad by die-bonding glue. The LED integrated chip 2 contains 3 independent controls. The light-emitting points 3 are red, green, and blue light-emitting points 3 respectively. The electrodes of the LED integrated chip 2 are connected to the circuit of the substrate 1 through the bonding wire, and the top of each light-emitting point 3 is sprayed with different colors The quantum dots form the corresponding red light quantum dot layer, green light quantum dot layer and blue light quantum dot layer to obtain light of different colors. The top of each quantum dot layer 4 is covered with a filter layer 5 of corresponding color. Including commercially available filter films, and finally encapsulating the light-emitting unit composed of light-emitting dots 3, quantum dot layer 4 and filter layer 5 with encapsulating glue 6, to provide an application environment for isolating water and oxygen for chips, quantum dots and internal circuits. Realize LED high-density display.
基板1上包含有多个发光单元,每个发光单元内均放置LED集成芯片2,一个LED集成芯片2包含多个发光点3,同时在芯片上的发光点3上分别喷涂量子点形成量子点层4,以获取不同颜色的光,在量子点层4的外部设置滤光层5,用于吸收激发光源波段的光,提升光源质量和显示质量,最后在外部模造有封装胶6,为芯片、量子点和内部线路提供隔离水氧的应用环境,实现LED高密度显示。The substrate 1 contains multiple light-emitting units, and each light-emitting unit is equipped with an LED integrated chip 2. One LED integrated chip 2 contains multiple light-emitting points 3, and at the same time, quantum dots are sprayed on the light-emitting points 3 on the chip to form quantum dots. Layer 4 to obtain light of different colors. A filter layer 5 is provided on the outside of the quantum dot layer 4 to absorb the light of the excitation light source and improve the quality of the light source and display quality. Finally, an encapsulant 6 is molded on the outside as a chip , Quantum dots and internal circuits provide an application environment for isolating water and oxygen, realizing high-density LED display.
在本实施例中,对同一LED集成芯片2上的多个发光点3之间的间距合理设置,设置间距为2-50um,间距非常小,而现有的LED发光是采用单个芯片单个发光点,其相比LED集成芯片,不仅多了两个芯片,还需预留出解决固晶误差的间距,所以本设计大大缩小了LED之间的显示间距,使其发光更密集,同时,间距进行最优设置为26um,避免邻近的两个发光点3之间的发光范围相互覆盖,保证在最大程度上充分利用发光范围的同时保持间距极小的紧密接触,节省设计成本,优化发光效果。In this embodiment, the distance between multiple light-emitting points 3 on the same LED integrated chip 2 is set reasonably, and the distance is set to 2-50um, which is very small. However, the existing LED light uses a single chip with a single light-emitting point. Compared with the LED integrated chip, it not only has two more chips, but also needs to reserve a distance to solve the die-bonding error. Therefore, the design greatly reduces the display distance between the LEDs and makes the light emission more dense. The optimal setting is 26um to avoid the light-emitting range between the two adjacent light-emitting points 3 from covering each other, to ensure that the light-emitting range is fully utilized to the maximum extent while maintaining close contact with extremely small spacing, saving design costs and optimizing the light-emitting effect.
在本实施例中,量子点层4分为红光量子点层、绿光量子点层和蓝光量子点层,红光量子点层为混合有能受LED集成芯片发出的光激发产生波长在615-680nm红光的红光量子点材料的硅胶或环氧胶,绿光量子点层为混合有能受LED集成芯片发出的光激发产生波长在518-580nm绿光的绿光量子点材料的硅胶或环氧胶,蓝光量子点层为混合有能受LED集成芯片发出的光激发产生波长在420-480nm蓝光的蓝光量子点材料的硅胶或环氧胶。In this embodiment, the quantum dot layer 4 is divided into a red light quantum dot layer, a green light quantum dot layer, and a blue light quantum dot layer. The red light quantum dot layer is mixed with light that can be excited by the light emitted by the LED integrated chip to produce a wavelength of 615-680nm. The light red light quantum dot material is silica gel or epoxy glue, the green light quantum dot layer is mixed with the green light quantum dot material that can be excited by the light emitted by the LED integrated chip to produce green light with a wavelength of 518-580nm. The quantum dot layer is silica gel or epoxy glue mixed with blue quantum dot materials that can be excited by the light emitted by the LED integrated chip to produce blue light with a wavelength of 420-480 nm.
在本实施例中,基板1包括杯碗型基板、平板型基板、多层线路阵列发光 单元基板和带驱动IC的多层线路阵列发光单元基板。In this embodiment, the substrate 1 includes a cup-bowl type substrate, a flat-plate type substrate, a multilayer circuit array light-emitting unit substrate, and a multilayer circuit array light-emitting unit substrate with a driver IC.
在本实施例中,LED集成芯片2包括正装芯片、倒装芯片或垂直芯片,LED集成芯片为共极或非共极结构。In this embodiment, the LED integrated chip 2 includes a face-mounted chip, a flip-chip or a vertical chip, and the LED integrated chip has a common pole or non-common pole structure.
实施例2:Example 2:
如图2所示,本实施例与实施例1相似,所不同之处在于,以LED集成芯片采用共极式正装芯片7进行显示应用,可看到,共极式正装芯片7的三个发光点上均设有一个阴电极,共用一个阳电极,三个阴电极和一个阳电极均通过键合线与基板1的电路引脚进行连接导通。As shown in FIG. 2, this embodiment is similar to Embodiment 1, except that the LED integrated chip adopts the common-polar form chip 7 for display application. It can be seen that the three light-emitting elements of the common-pole form Each point is provided with a cathode electrode and shares an anode electrode. The three cathode electrodes and one anode electrode are all connected to the circuit pins of the substrate 1 through bonding wires.
实施例3:Example 3:
如图3所示,本实施例与实施例1相似,所不同之处在于,以LED集成芯片采用非共极式正装芯片8进行显示应用,可看到,非共极式正装芯片8的三个发光点上均设有一个阴电极和一个阳电极,三个阴电极和三个阳电极均通过键合线与基板1的电路引脚进行连接导通。As shown in Fig. 3, this embodiment is similar to embodiment 1, except that the LED integrated chip adopts non-common-polar formal mounting chip 8 for display application. It can be seen that three of the non-common-polar formal mounting chip 8 Each light-emitting point is provided with a cathode electrode and an anode electrode, and the three cathode electrodes and the three anode electrodes are all connected to the circuit pins of the substrate 1 through bonding wires.
实施例4:Example 4:
如图4所示,本实施例与实施例1相似,所不同之处在于,以LED集成芯片采用垂直芯片9进行显示应用,可看到,垂直芯片9的三个发光点上均设有一个阴电极,其底部采用金属材质作为阳电极之间与电路焊盘进焊接,阴电极通过键合线与基板1的电路引脚进行连接导通。As shown in Fig. 4, this embodiment is similar to embodiment 1, except that the LED integrated chip adopts a vertical chip 9 for display applications. It can be seen that each of the three light-emitting points of the vertical chip 9 is provided with one The bottom of the cathode electrode is made of a metal material as the anode electrode and the circuit pad is welded, and the cathode electrode is connected to the circuit pin of the substrate 1 through the bonding wire.
实施例5:Example 5:
如图5所示,以LED集成芯片采用倒装芯片10进行显示应用,倒装芯片10包括共极式和非共极式,其中,共极式倒装芯片与实施例2中的共极式正装芯片7的结构顺序相反,非共极式倒装芯片与实施例3中的非共极式正装芯片8的结构顺序相反,在安装共极式倒装芯片或非共极式倒装芯片时,均是将阴电极与阳电极通过与基板1的焊盘进行焊接连接,使电极与基板1的电路连接导通,由于安装共极式倒装芯片或非共极式倒装芯片均为电极与基板1直接焊接接触,其顶面的结构相同,所以安装共极式倒装芯片或非共极式倒装芯片安装在基板1上时,其俯视图相同,即如图5所示,既可表示共极式倒装芯片应用在基板1上的俯视图,也可以表示非共极式倒装芯片应用在基板1上的俯视图。As shown in FIG. 5, the LED integrated chip adopts the flip chip 10 for display applications. The flip chip 10 includes a common pole type and a non-common pole type. Among them, the common pole type flip chip is the same as the common pole type in the second embodiment. The structural sequence of the front-mounted chip 7 is reversed, and the structural sequence of the non-common-polarized flip-chip 8 in the embodiment 3 is reversed. When a common-polarized flip-chip or a non-common-polarized flip-chip is installed , Both the cathode and anode electrodes are connected to the pads of the substrate 1 by soldering, so that the electrode and the circuit connection of the substrate 1 are connected. Because the common or non-common flip chip is installed, both electrodes It is in direct solder contact with the substrate 1, and its top surface has the same structure. Therefore, when a common pole flip chip or a non-common pole flip chip is mounted on the substrate 1, the top view is the same, that is, as shown in Figure 5, either It shows a top view of a common pole flip chip applied on the substrate 1, and may also show a top view of a non-common pole flip chip applied on the substrate 1.
显然,本实用新型的上述实施例仅仅是为清楚地说明本实用新型所作的举例,而并非是对本实用新型的实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本实用新型的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本实用新型权利要求的保护范围之内。Obviously, the above-mentioned embodiments of the present utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is unnecessary and impossible to list all implementation methods here. Any modification, equivalent replacement and improvement made within the spirit and principle of the utility model shall be included in the protection scope of the claims of the utility model.

Claims (7)

  1. 一种LED显示结构,其特征在于,包括基板,所述基板设有焊盘,所述焊盘上设有LED集成芯片,所述LED集成芯片包含有若干个独立控制的发光点,所述LED集成芯片的电极通过键合线与所述基板的电路导通,所述发光点的顶部设有量子点层,所述量子点层的顶部设有滤光层,利用封装胶将所述发光点、量子点层和滤光层组成的发光单元进行封装。An LED display structure, characterized in that it comprises a substrate, the substrate is provided with a pad, the pad is provided with an LED integrated chip, the LED integrated chip includes a plurality of independently controlled light-emitting points, the LED The electrodes of the integrated chip are connected to the circuit of the substrate through bonding wires, a quantum dot layer is provided on the top of the light-emitting point, and a filter layer is provided on the top of the quantum dot layer. The light-emitting point is The light emitting unit composed of the quantum dot layer and the filter layer is packaged.
  2. 根据权利要求1所述的一种LED显示结构,其特征在于,所述LED集成芯片包括正装芯片、倒装芯片或垂直芯片。The LED display structure of claim 1, wherein the LED integrated chip includes a face-mounted chip, a flip-chip or a vertical chip.
  3. 根据权利要求1所述的一种LED显示结构,其特征在于,所述LED集成芯片为共极或非共极结构。The LED display structure of claim 1, wherein the LED integrated chip has a common pole or non-common pole structure.
  4. 根据权利要求1所述的一种LED显示结构,其特征在于,若干个所述发光点之间的间距为2-50um。The LED display structure according to claim 1, wherein the distance between the plurality of light-emitting points is 2-50um.
  5. 根据权利要求4所述的一种LED显示结构,其特征在于,若干个所述发光点之间的间距为26um。An LED display structure according to claim 4, wherein the distance between the plurality of light-emitting points is 26um.
  6. 根据权利要求1所述的一种LED显示结构,其特征在于,所述基板包括杯碗型基板、平板型基板、多层线路阵列发光单元基板和带驱动IC的多层线路阵列发光单元基板。The LED display structure according to claim 1, wherein the substrate includes a cup-bowl type substrate, a flat-plate type substrate, a multilayer circuit array light-emitting unit substrate, and a multilayer circuit array light-emitting unit substrate with a driver IC.
  7. 根据权利要求1所述的一种LED显示结构,其特征在于,所述滤光层包括滤光膜。The LED display structure of claim 1, wherein the filter layer comprises a filter film.
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