WO2020238055A1 - 量子棒发光二极管器件 - Google Patents

量子棒发光二极管器件 Download PDF

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WO2020238055A1
WO2020238055A1 PCT/CN2019/117758 CN2019117758W WO2020238055A1 WO 2020238055 A1 WO2020238055 A1 WO 2020238055A1 CN 2019117758 W CN2019117758 W CN 2019117758W WO 2020238055 A1 WO2020238055 A1 WO 2020238055A1
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quantum
emitting diode
layer
diode device
quantum rod
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French (fr)
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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Priority to US16/617,097 priority Critical patent/US11437543B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO

Definitions

  • the present invention relates to a quantum rod light emitting diode device, in particular to a quantum rod light emitting diode device, in which the quantum rods are arranged in a directional arrangement to provide polarized light, thereby increasing the transmittance.
  • Quantum Dots are extremely tiny inorganic nanocrystals. Quantum dots emit colored light whenever they are stimulated by light or electricity. The color of the light is determined by the material and size of the quantum dots. The smaller the quantum dot particles are, they will absorb long waves. The larger the particles, they will absorb short waves. Quantum dots can absorb short-wave blue and excite long-wavelength light colors. This feature enables quantum dots to change the color of light emitted by the light source.
  • Quantum dot display technology has the characteristics of wide color gamut coverage, high color control accuracy, high red, green and blue color purity, and is regarded as a display technology revolution affecting the world. Quantum dot display technology revolutionizes full color gamut display.
  • Quantum dots are semiconductor nanocrystals with a radius smaller than or close to the Bohr radius (Bohr Radius), and most of them are nanomaterials composed of II-VI or III-V elements. Due to the quantum confinement effect, the transport of electrons and holes inside is restricted, so that the continuous energy band structure becomes a separate energy level structure. When the size of the quantum dot is different, the quantum confinement degree of the electron and the hole is different, and the discrete energy level structure is different. After being excited by external energy, quantum dots of different sizes emit light of different wavelengths, that is, light of various colors.
  • quantum dots by adjusting the size of quantum dots, the emission wavelength range can cover infrared light and the entire visible light band, and the emitted light band is narrow, and the color saturation is high; the quantum dot material has high quantum conversion efficiency and stable material performance;
  • the preparation method is simple and diverse, can be prepared from solution, and has abundant resources.
  • the exit direction is random.
  • the liquid crystal display device Liquid crystal display (LCD) will cause light leakage.
  • the working principle of the LCD display device is to use the optical rotation and birefringence of the liquid crystal to control the rotation of the liquid crystal through the voltage, so that the linearly polarized light after passing through the upper polarizer will rotate and come out from the lower polarizer (perpendicular to the upper polarizer). . Therefore, the polarizer and the liquid crystal cell function as an optical switch. Obviously, this optical switch cannot fully affect the light emitted by the quantum dots.
  • QD Polarizer QD POL
  • the polarizer is composed of a combination of multilayer films.
  • One type of polarizer with improved backlight brightness utilization has basic structures including: the middle PVA (polyvinyl alcohol), two layers of triacetate cellulose (TAC), pressure sensitive Adhesive (Pressure Sensitive Adhesive film, PSA film), Release Film (Release Film), Protective Film (Protective Film) and other functional film structures.
  • QD POL is about preparing quantum dots into a film and inserting them between the positions of the polarizer functional layer.
  • This layer not only improves the light energy utilization rate of the backlight, but also improves the color gamut of the panel, enhances the role of the polarizer, and simplifies the molding and preparation. Craft.
  • the stimulated emission of quantum dots is unpolarized, which makes the quantum dots lose at least half of their brightness after passing through the polarizer.
  • the intensity of the light passing through the polarizer can be greatly increased.
  • Quantum Rod QD When Rod
  • the stimulated radiation has a certain degree of polarization.
  • quantum dot polarizers prepared using this characteristic in the prior art.
  • the technology uses quantum rods to be blended with discotic liquid crystals, but fails to ensure that the quantum rods are aligned in orientation when the discotic liquid crystals are blended.
  • the actual effect of disordered quantum rods is similar to that of quantum dots, and the effect of increasing the transmittance cannot be achieved well.
  • the quantum dots are dispersed in the discotic liquid crystal compensation layer to a certain degree of dispersion.
  • QLED Quantum Dot Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • QLED like OLED, is an electroluminescent device.
  • the process of secondary conversion also has faster switching characteristics than liquid crystal display technology.
  • General QLED devices use synthetic quantum dots as functional layers. As inorganic materials, quantum dots have better luminescence stability and reliability, and their luminous efficiency and color purity are extremely high. In some cases, when a polarized light source is required, quantum dots as a point light source cannot meet this demand.
  • the present invention provides a quantum rod light-emitting diode device to solve the technical problem that the quantum rods in the prior art QLED devices are disorderly arranged and cannot provide polarized light, resulting in low transmittance.
  • the main purpose of the present invention is to provide a quantum rod light emitting diode device, which includes:
  • a plurality of quantum rods are arranged in the light-emitting layer, and the plurality of quantum rods are arranged in a directional arrangement.
  • the long axes of the plurality of quantum rods are all along the same direction.
  • the long axes of the plurality of quantum rods are parallel to each other.
  • the long axes of the plurality of quantum rods are parallel to the vertical axis of the light-emitting layer.
  • the electronic function layer includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.
  • the electronic functional layer includes an organic material or an inorganic material.
  • the hole function layer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • the quantum rod includes a shell and a core arranged in the shell, the shell is long rod-shaped, and the ratio of the length of the shell to the diameter of the shell is greater than 2.
  • the shell includes zinc sulfide (ZnS), cadmium sulfide (CdS), or zinc selenide (ZnSe)
  • the core is cadmium selenide (CdSe), cadmium sulfide (CdS) ), zinc selenide (ZnSe), zinc sulfide selenide (ZnSeS), indium phosphide (InP), lead sulfide (PbS), or zinc indium copper sulfide (CuInZnS).
  • the quantum rod includes a transition region, the transition region is disposed between the core and the shell, and the transition region includes cadmium selenide (CdSe) , Zinc selenide (ZnSe), zinc sulfide (ZnS), cadmium selenide (CdSe), cadmium sulfide (CdS), or zinc sulfide (ZnS).
  • CdSe cadmium selenide
  • ZnSe Zinc selenide
  • ZnS zinc sulfide
  • CdSe cadmium selenide
  • CdS cadmium sulfide
  • CdS zinc sulfide
  • Another object of the present invention is to provide a quantum rod light emitting diode device, including: a quantum rod light emitting diode device, including:
  • a plurality of quantum rods are arranged in the light-emitting layer, and the plurality of quantum rods are arranged in a directional arrangement;
  • the long axes of the plurality of quantum rods are all along the same direction and parallel to each other;
  • the long axes of the plurality of quantum rods are parallel to the vertical axis of the light-emitting layer.
  • the electronic function layer includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.
  • the electronic functional layer includes an organic material or an inorganic material.
  • the hole function layer includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • the quantum rod includes a shell and a core arranged in the shell, the shell is long rod-shaped, and the ratio of the length of the shell to the diameter of the shell is greater than 2.
  • the shell includes zinc sulfide, cadmium sulfide, or zinc selenide
  • the core includes cadmium selenide, cadmium sulfide, zinc selenide, zinc sulfide selenide, indium phosphide, Lead sulfide, or sulfur zinc indium copper.
  • the quantum rod includes a transition zone, the transition zone is arranged between the core and the shell, and the transition zone includes cadmium selenide, zinc selenide, zinc sulfide , Cadmium selenide, cadmium sulfide, or zinc sulfide.
  • the light-emitting layer of the QLED device of the present invention includes oriented (orderly arranged) quantum rods, which can convert incident light into polarized light, so the oriented (ordered) quantum rods have It is beneficial for the incident light to become polarized light with a very high degree of polarization, so that when the polarized light passes through the polarizing film with the same polarization transmission direction, the output efficiency is improved.
  • Fig. 1 is a schematic side view of a quantum rod light emitting diode device of the present invention.
  • Fig. 2 is a schematic side view of the light-emitting layer of the present invention.
  • Fig. 3 is a schematic diagram of the three-dimensional appearance of the quantum rod of the present invention.
  • the quantum rod light-emitting diode of the present invention is an electroluminescent device, and includes a substrate 1 and a cathode 2, an electronic function layer 3, a light emitting layer 4, a hole function layer 5, and an anode 6 stacked on the substrate 1 in sequence.
  • QLED Quantum Dot Rod The Light Emitting Diode
  • the electronic functional layer 3 includes at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.
  • the electronic functional layer 3 may be an organic material or an inorganic material.
  • the light-emitting layer 4 is made of Quantum Dot Rod (QD Rod) 10 as a light-emitting material.
  • QD Rod Quantum Dot Rod
  • a plurality of quantum rods 10 are arranged in the light-emitting layer 4, and the plurality of quantum rods 10 are arranged in a directional arrangement.
  • the long axes A of the plurality of quantum rods 10 are all along the same direction, and the plurality of quantum rods 10
  • the major axes A of 10 are parallel to each other.
  • the long axis A of the plurality of quantum rods 10 may be parallel to the vertical axis V of the light emitting layer 4.
  • the hole function layer 5 includes at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • the quantum rod film with ordered quantum rods is prepared, and the photoluminescence characteristics are used to improve the liquid crystal display (Liquid Crystal Display, LCD) and other display backlight emission efficiency.
  • LCD Liquid Crystal Display
  • the LCD generally has a polarizer on the light-incident side, the incident light will be absorbed by more than 50% under normal circumstances, so the ordered arrangement of quantum rods 10 will help the incident light become polarized light with extremely high polarization, so that the polarized light is When passing through a polarizing film whose polarization transmission direction is the same, the output efficiency is improved.
  • the quantum rod 10 is developed from quantum dots. Compared with quantum dots, the quantum rod 10 has a significant difference in shape, from a spherical shape to a long rod shape. It includes a shell 11 and a core 12 arranged in the shell 11 .
  • the shell 11 is long rod-shaped, and the ratio L/R of the length L of the shell 11 to the diameter R of the shell 11 is L/R>2, the length L of the shell 11 is generally greater than 5 nm, and the core 12 may be spherical, It can also be rod-shaped.
  • the material of the housing 11 includes zinc sulfide (ZnS), cadmium sulfide (CdS), or zinc selenide (ZnSe).
  • the core 12 is generally a combination of II-VI semiconductor or III-VI semiconductor materials, such as cadmium selenide (CdSe), cadmium sulfide (CdS), zinc selenide (ZnSe), zinc sulphur selenide (ZnSeS), Indium phosphide (InP), lead sulfide (PbS), or multiple composite materials such as CuInZnS.
  • CdSe cadmium selenide
  • CdS cadmium sulfide
  • ZnSe zinc selenide
  • ZnSeS zinc sulphur selenide
  • InP Indium phosphide
  • PbS lead sulfide
  • multiple composite materials such as CuInZnS.
  • the quantum rod 10 includes a transition region, the transition region is disposed between the core 12 and the shell 11 material, and the transition region may include cadmium selenide (CdSe) , Zinc selenide (ZnSe), zinc sulfide (ZnS), cadmium selenide (CdSe), cadmium sulfide (CdS), or zinc sulfide (ZnS).
  • CdSe cadmium selenide
  • ZnSe Zinc selenide
  • ZnS zinc sulfide
  • CdSe cadmium selenide
  • CdS cadmium sulfide
  • ZnS zinc sulfide
  • the light-emitting layer 4 is a quantum rod film.
  • the quantum rod 10 is purified and dispersed in a solvent such as chlorobenzene to become a quantum rod solution by an appropriate synthesis method, and the quantum rod solution is applied to the electronic functional layer 3. After coating the quantum rod solution, the solvent in the quantum rod film is evaporated to form the quantum rod film.
  • the light-emitting layer 4 is a quantum rod film.
  • the quantum rod 10 is dispersed in a photoresist or solution with a certain curing function, and then the photoresist or solution is coated on the electronic functional layer 3, under the action of ultraviolet light or heat The photoresist or solution is cured to form the light-emitting layer 4.
  • a certain amount of semiconductor nanoparticles or conductive nanoparticles may be doped into the light-emitting layer 4 to improve the conductivity of the light-emitting layer 4.
  • the light-emitting layer 4 of the QLED device of the present invention includes oriented (orderly arranged) quantum rods 10, which can convert incident light into polarized light, so oriented (ordered) quantum rods are used.
  • the rod 10 is conducive to changing incident light into polarized light with a very high degree of polarization, so that when the polarized light passes through the polarizing film with the same polarization transmission direction, the output efficiency is improved.

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Abstract

一种量子棒发光二极管器件，包括衬底（1）以及依序迭设在衬底（1）上的阴极（2）、电子功能层（3）、发光层（4）、空穴功能层（5）以及阳极（6）。其中，所述发光层（4）内设置有多个量子棒（10），所述多个量子棒（10）定向排列。量子棒发光二极管器件的发光层（4）包括了定向排列的量子棒（10），可使入射光被转换为偏振光，有利于提高偏振光出射效率。

Description

量子棒发光二极管器件 技术领域
本发明是有关于一种量子棒发光二极管器件，尤其关于一种量子棒发光二极管器件，其中量子棒定向排列而能提供偏振光，进而提高透过率。
 背景技术
量子点(Quantum Dots, QD)是极其微小的无机纳米晶体。每当受到光或电的刺激，量子点便会发出有色光线，光线的颜色由量子点的组成材料和大小形状决定，量子点颗粒若越小，会吸收长波，颗粒越大，会吸收短波。量子点可吸收短波的蓝色，激发出呈现出长波段光色。此特性使得量子点能够改变光源发出的光线颜色。
量子点显示技术具有广色域覆盖率、高色彩控制精确性、高红绿蓝色彩纯净度等特性，被视为影响全球的显示技术革命。量子点显示技术革命性的实现全色域显示。
量子点是半径小于或接近于波尔半径(Bohr Radius)的半导体纳米晶体，大部分由Ⅱ-Ⅵ族或Ⅲ-Ⅴ族元素组成的纳米材料。由于量子限域效应，其内部的电子和空穴的运输受到限制，使得连续的能带结构变成分离的能级结构。当量子点的尺寸不同时，电子与空穴的量子限域程度不一样，分立的能级结构不同。在受到外来能量激发后，不同尺寸的量子点即发出不同波长的光，也就是各种颜色的光。
量子点的优势在于：通过调控量子点的尺寸，可以实现发光波长范围覆盖到红外光及整个可见光波段，且发射光波段窄，色彩饱和度高；量子点材料量子转换效率高；材料性能稳定；制备方法简单多样，可以从溶液中制备，资源丰富。
然而，光线经过量子点后，出射方向是随机的，当经过量子点后的发散光线穿过液晶时，不再能很好的控制相应像素点位的所有光线，液晶显示器件(Liquid crystal display, LCD)就会发生漏光现象。而LCD显示器件工作原理是利用液晶的旋光性和双折射，通过电压控制液晶的转动，使经过上偏振片后的线偏振光随之发生旋转，从下偏振片（与上偏片垂直）出来。从而偏光片加上液晶盒起到光开关的作用。显然，这种光学开关对量子点发出的光线无法完全作用。
为了避免将量子点置于液晶盒中而发生光偏振消除的现象，现有技术供一种量子点偏光片（QD Polarizer, QD POL），即将量子点置于偏光片中。偏光片是由多层膜组合而成，其中一类具有提高背光亮度利用率的偏光片其基本结构包括：最中间的PVA（聚乙烯醇）、两层三醋酸纤维素(TAC)、压敏胶(Pressure Sensitive Adhesive film, PSA film)，离型膜(Release Film)、保护膜(Protective Film)以及其他功能膜结构等。所谓QD POL即将量子点制备成膜，插入偏光片功能层位置之间，此一层既提升了背光的光能利用率，同时也提升面板的色域，提升了偏光片的作用同时简化成型制备中的工艺。然而，其缺点为， LCD背光发出的光型依赖于光源和背光架构具有特定的形状，其不同角度的亮度存在差异，例如一种典型的Lambert型背光，L(θ)=L(0)*cos(θ)，即斜视方向的亮度与正视方向的亮度比值为夹角的余弦。
一般情况下，量子点受激发射的光是非偏振的，这使得量子点发光经过偏光板后，至少损失一半亮度。当量子点所发出光线具有一定偏振性时，可大幅提高透过偏振片的光强。量子棒(QD Rod)定向排列时，受激辐射的光具有一定的偏振性。现有技术已经存在利用这种特性制备的量子点偏光片，所述技术采用了量子棒与盘状液晶共混，但未能确保在于盘状液晶共混时，量子棒以定向排列。无序排列的量子棒实际效果与量子点类似，不能很好达成提高透过率的效果。同时，量子点分散在盘状液晶补偿层中存在一定的分散性。
此外，业界现有量子点发光二极管(Quantum Dot Light Emitting Diode, QLED)替代有机发光二极管(Organic Light Emitting Diode, OLED)的趋势，QLED与OLED一样，是一种电致发光器件，其避免了二次转换的过程，同时具有相比液晶显示技术，具有较快的开关特性。一般的QLED器件，是由合成的量子点作为功能层，量子点作为无机材料，具有更好的发光稳定性与可靠性，同时其发光效率和色纯度都极高。在一些情况下，需要采用偏振光源时，量子点作为点光源无法满足这一需求。
故，有必要提供一种量子棒发光二极管器件，以解决现有技术所存在的问题。
 技术问题
有鉴于此，本发明提供一种量子棒发光二极管器件，以解决现有技术QLED器件中量子棒无序排列而不能提供偏振光，造成透过率低落的技术问题。
 技术解决方案
本发明的主要目的在于提供一种量子棒发光二极管器件，其包括：
衬底以及依序迭设在衬底上的阴极、电子功能层、发光层、空穴功能层以及阳极；
其中，所述发光层内设置有多个量子棒，所述多个量子棒定向排列。
在本发明的一实施例中，所述多个量子棒的长轴均沿着同一方向。
在本发明的一实施例中，所述多个量子棒的长轴相互平行。
在本发明的一实施例中，所述多个量子棒的长轴与所述发光层的垂直轴平行。
在本发明的一实施例中，所述电子功能层包括电子注入层、电子传输层、以及空穴阻挡层中的至少一层。
在本发明的一实施例中，所述电子功能层包括有机材料或无机材料。
在本发明的一实施例中，所述空穴功能层包括空穴注入层、空穴传输层以及电子阻挡层中的至少一层。
在本发明的一实施例中，所述量子棒包括壳体与设置在所述壳体内的核心，所述壳体为长棒状，且所述壳体的长度与所述壳体的直径比大于2。
在本发明的一实施例中，所述壳体包括硫化锌(ZnS)、硫化镉(CdS)、或硒化锌(ZnSe)，以及所述核心为硒化镉(CdSe)、硫化镉(CdS)、硒化锌(ZnSe)、硫硒化锌(ZnSeS)、磷化铟(InP)、硫化铅(PbS)、或硫锌铟铜(CuInZnS)。
在本发明的一实施例中，所述量子棒包括过渡区，所述过渡区设置在所述核心和所述壳体之间，所述过渡区包括硒化镉(CdSe) 、硒化锌(ZnSe) 、硫化锌(ZnS)、硒化镉(CdSe)、硫化镉(CdS)、或硫化锌(ZnS)。
本发明的另一目的在于提供一种量子棒发光二极管器件，其包括：一种量子棒发光二极管器件，包括：
衬底以及依序迭设在所述衬底上的阴极、电子功能层、发光层、空穴功能层以及阳极；
其中，所述发光层内设置有多个量子棒，所述多个量子棒定向排列；
其中，所述多个量子棒的长轴均沿着同一方向且相互平行；
在本发明的一实施例中，所述多个量子棒的长轴与所述发光层的垂直轴平行。
在本发明的一实施例中，所述电子功能层包括电子注入层、电子传输层、以及空穴阻挡层中的至少一层。
在本发明的一实施例中，所述电子功能层包括有机材料或无机材料。
在本发明的一实施例中，所述空穴功能层包括空穴注入层、空穴传输层以及电子阻挡层中的至少一层。
在本发明的一实施例中，所述量子棒包括壳体与设置在所述壳体内的核心，所述壳体为长棒状，且所述壳体的长度与所述壳体的直径比大于2。
在本发明的一实施例中，所述壳体包括硫化锌、硫化镉、或硒化锌，以及所述核心包括硒化镉、硫化镉、硒化锌、硫硒化锌、磷化铟、硫化铅、或硫锌铟铜。
在本发明的一实施例中，所述量子棒包括过渡区，所述过渡区设置在所述核心和所述壳体之间，以及所述过渡区包括硒化镉、硒化锌、硫化锌、硒化镉、硫化镉、或硫化锌。
 有益效果
相较于现有技术，本发明 QLED器件的发光层包括了定向排列（有序排列）的量子棒，可使入射光被转换为偏振光，所以采用定向排列（有序排列）的量子棒有利于入射光变为偏振度极高的偏振光，从而偏振光在透过与其偏振透过方向一致的偏振膜时，提高出射效率。
为让本发明的上述内容能更明显易懂，下文特举优选实施例，且配合所附图式，作详细说明如下：
 附图说明
图1是本发明量子棒发光二极管器件的侧面示意图。
图2是本发明发光层的侧面示意图。
图3是本发明量子棒的立体外观示意图。
 本发明的实施方式
请参照图1，本发明量子棒发光二极管(Quantum Dot Rod Light Emitting Diode, QLED)器件为电致发光器件，包括衬底1以及依序迭设在衬底1上的阴极2、电子功能层3、发光层4、空穴功能层5以及阳极6。
在本发明较佳实施例中，所述电子功能层3包括电子注入层、电子传输层、以及空穴阻挡层中的至少一层。此外，所述电子功能层3可以为有机材料，也可以为无机材料。
请参照图2，所述发光层4即由量子棒(Quantum Dot Rod, QD Rod)10作为发光材料。所述发光层4内设置有多个量子棒10，所述多个量子棒10定向排列，换言之，所述多个量子棒10的长轴A均沿着同一方向，且所述多个量子棒10的长轴A相互平行。此外，所述多个量子棒10的长轴A可与所述发光层4的垂直轴V平行。
在本发明较佳实施例中，所述空穴功能层5包括空穴注入层、空穴传输层以及电子阻挡层中的至少一层。
就量子棒10而言，在其发生受激辐射时，沿棒的长轴方向激发出偏振度极高同时半峰宽很窄的受激辐射光。本发明透过制备量子棒有序排列的量子棒膜，利用其光致发光特性，提高液晶显示器(Liquid Crystal Display, LCD)等显示器的背光出射效率。因为LCD在入光侧一般具有偏振片，正常情况下入射光会被吸收50%以上，所以采用有序排列的量子棒10有利于入射光变为偏振度极高的偏振光，从而偏振光在透过与其偏振透过方向一致的偏振膜时，提高出射效率。
请参照图3，量子棒10是由量子点发展而来，其相对量子点，具有明显的形状差异，从球状变为长棒状，包括壳体11与设置在所述壳体11内的核心12。所述壳体11为长棒状，且所述壳体11的长度L与所述壳体11的直径R比L/R>2，壳体11的长度L一般大于5nm，核心12可以为球状，也可以为棒状。所述壳体11材料包括硫化锌(ZnS)、硫化镉(CdS)、或硒化锌(ZnSe)等。所述核心12一般为II-VI族半导体或III-VI族半导体材料的组合，例如硒化镉(CdSe)、硫化镉(CdS)、硒化锌(ZnSe)、硫硒化锌(ZnSeS)、磷化铟(InP)、硫化铅(PbS) 、或多元复合材料硫锌铟铜(CuInZnS)等。所述量子棒10包括过渡区，所述过渡区设置在所述核心12和所述壳体11材料之间，以及所述过渡区可包括硒化镉(CdSe) 、硒化锌(ZnSe) 、硫化锌(ZnS)、硒化镉(CdSe)、硫化镉(CdS)、或是硫化锌(ZnS)等。
在本发明一实施例中，所述发光层4为量子棒薄膜。在本实施例中，通过适当的合成方法，将量子棒10提纯并分散在氯苯等溶剂中以成为量子棒溶液，并将所述量子棒溶液涂布到所述电子功能层3。在所述量子棒溶液涂布完成后，蒸干所述量子棒薄膜中的溶剂即可形成所述量子棒薄膜。
在本发明另一实施例中，所述发光层4为量子棒薄膜。在本实施例中，将量子棒10分散于具有一定固化功能的光刻胶或溶液中，接着将所述光刻胶或溶液涂布在所述电子功能层3，在紫外光或热作用下使所述光刻胶或溶液固化以形成所述发光层4。此外，在本发明一实施例中，可在上述发光层4中掺入一定量的半导体纳米粒子或导电纳米粒子，以提高所述发光层4的导通性。
相较于现有技术，本发明 QLED器件的发光层4包括了定向排列（有序排列）的量子棒10，可使入射光被转换为偏振光，所以采用定向排列（有序排列）的量子棒10有利于入射光变为偏振度极高的偏振光，从而偏振光在透过与其偏振透过方向一致的偏振膜时，提高出射效率。

Claims (18)

  1. 一种量子棒发光二极管器件，包括：
    衬底以及依序迭设在所述衬底上的阴极、电子功能层、发光层、空穴功能层以及阳极；
    其中，所述发光层内设置有多个量子棒，所述多个量子棒定向排列。
  2. 如权利要求1所述的量子棒发光二极管器件，其中所述多个量子棒的长轴均沿着同一方向。
  3. 如权利要求1所述的量子棒发光二极管器件，其中所述多个量子棒的长轴相互平行。
  4. 如权利要求1所述的量子棒发光二极管器件，其中所述多个量子棒的长轴与所述发光层的垂直轴平行。
  5. 如权利要求1所述的量子棒发光二极管器件，其中所述电子功能层包括电子注入层、电子传输层、以及空穴阻挡层中的至少一层。
  6. 如权利要求1所述的量子棒发光二极管器件，其中所述电子功能层包括有机材料或无机材料。
  7. 如权利要求1所述的量子棒发光二极管器件，其中所述空穴功能层包括空穴注入层、空穴传输层以及电子阻挡层中的至少一层。
  8. 如权利要求1所述的量子棒发光二极管器件，其中所述量子棒包括壳体与设置在所述壳体内的核心，所述壳体为长棒状，且所述壳体的长度与所述壳体的直径比大于2。
  9. 如权利要求8所述的量子棒发光二极管器件，其中所述壳体包括硫化锌、硫化镉、或硒化锌，以及所述核心包括硒化镉、硫化镉、硒化锌、硫硒化锌、磷化铟、硫化铅、或硫锌铟铜。
  10. 如权利要求8所述的量子棒发光二极管器件，其中所述量子棒包括过渡区，所述过渡区设置在所述核心和所述壳体之间，以及所述过渡区包括硒化镉、硒化锌、硫化锌、硒化镉、硫化镉、或硫化锌。
  11. 一种量子棒发光二极管器件，包括：
    衬底以及依序迭设在所述衬底上的阴极、电子功能层、发光层、空穴功能层以及阳极；
    其中，所述发光层内设置有多个量子棒，所述多个量子棒定向排列；
    其中，所述多个量子棒的长轴均沿着同一方向且相互平行。
  12. 如权利要求11所述的量子棒发光二极管器件，其中所述多个量子棒的长轴与所述发光层的垂直轴平行。
  13. 如权利要求11所述的量子棒发光二极管器件，其中所述电子功能层包括电子注入层、电子传输层、以及空穴阻挡层中的至少一层。
  14. 如权利要求11所述的量子棒发光二极管器件，其中所述电子功能层包括有机材料或无机材料。
  15. 如权利要求11所述的量子棒发光二极管器件，其中所述空穴功能层包括空穴注入层、空穴传输层以及电子阻挡层中的至少一层。
  16. 如权利要求11所述的量子棒发光二极管器件，其中所述量子棒包括壳体与设置在所述壳体内的核心，所述壳体为长棒状，且所述壳体的长度与所述壳体的直径比大于2。
  17. 如权利要求16所述的量子棒发光二极管器件，其中所述壳体包括硫化锌、硫化镉、或硒化锌，以及所述核心包括硒化镉、硫化镉、硒化锌、硫硒化锌、磷化铟、硫化铅、或硫锌铟铜。
  18. 如权利要求16所述的量子棒发光二极管器件，其中所述量子棒包括过渡区，所述过渡区设置在所述核心和所述壳体之间，以及所述过渡区包括硒化镉、硒化锌、硫化锌、硒化镉、硫化镉、或硫化锌。
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