WO2020228523A1 - 超声波传感器、显示面板及显示装置 - Google Patents

超声波传感器、显示面板及显示装置 Download PDF

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Publication number
WO2020228523A1
WO2020228523A1 PCT/CN2020/087067 CN2020087067W WO2020228523A1 WO 2020228523 A1 WO2020228523 A1 WO 2020228523A1 CN 2020087067 W CN2020087067 W CN 2020087067W WO 2020228523 A1 WO2020228523 A1 WO 2020228523A1
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WIPO (PCT)
Prior art keywords
electrode
ultrasonic
lead
piezoelectric film
film layer
Prior art date
Application number
PCT/CN2020/087067
Other languages
English (en)
French (fr)
Inventor
刘英明
董学
王海生
丁小梁
王雷
王鹏鹏
李昌峰
李佩笑
张晨阳
Original Assignee
京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/040,926 priority Critical patent/US11823482B2/en
Publication of WO2020228523A1 publication Critical patent/WO2020228523A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/043—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves
    • G06F3/0436—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves in which generating transducers and detecting transducers are attached to a single acoustic waves transmission substrate

Definitions

  • the present disclosure relates to the field of sensor technology, in particular to an ultrasonic sensor, a display panel and a display device.
  • ultrasonic fingerprint recognition technology is one of the more widely used technologies in biometrics.
  • the ultrasonic sensor with the ultrasonic receiving structure and the ultrasonic transmitting structure sharing piezoelectric materials has the problem of low transmission performance and low utilization of ultrasonic signals.
  • the ultrasonic sensor provided by the implementation of the present disclosure includes:
  • the ultrasonic emission structure is located on the carrier substrate; the ultrasonic emission structure includes: a first piezoelectric film layer;
  • the ultrasonic receiving structure is located on the carrier substrate; the ultrasonic receiving structure includes: a second piezoelectric film layer;
  • the piezoelectric constant of the first piezoelectric film layer is greater than the piezoelectric constant of the second piezoelectric film layer.
  • the ultrasonic transmitting structure and the ultrasonic receiving structure are located on the same side of the carrier substrate.
  • the ultrasonic transmitting structure is located on a side of the ultrasonic receiving structure away from the carrier substrate.
  • it further includes: a protective layer located between the ultrasonic transmitting structure and the ultrasonic receiving structure, and a first electrode located on the side of the protective layer close to the ultrasonic transmitting structure Lead part and second electrode lead part;
  • the ultrasonic emission structure includes: a first electrode on the side of the first piezoelectric film layer away from the carrier substrate, and a second electrode on the side of the first piezoelectric film layer close to the carrier substrate ;
  • the first electrode lead-out portion is coupled with the second electrode, and the second electrode lead-out portion is coupled with the first electrode.
  • the ultrasonic transmitting structure further includes: a first conductive connection portion coupled with the first electrode;
  • One end of the first conductive connection portion is coupled to the first electrode, and the other end extends to the side of the first piezoelectric film layer close to the carrier substrate and directly contacts the second electrode lead-out portion Coupling; the first conductive connection portion is insulated from the second electrode;
  • the second electrode is directly contacted and coupled with the first electrode lead-out portion.
  • the first conductive connecting portion includes a silver glue material.
  • the ultrasonic transmitting structure further includes: a lead wire;
  • the edge of the first electrode on the side close to the second conductive lead portion extends beyond the edge of the first piezoelectric film layer; and the edge of the first electrode that extends beyond the first piezoelectric film layer is provided with lead hole;
  • One end of the lead wire is coupled to the second conductive lead part, and the other end is coupled to the first electrode through the lead hole;
  • the second electrode is directly contacted and coupled with the first electrode lead-out portion.
  • the first electrode and the second electrode include the same metal material
  • the first electrode lead-out portion and the second electrode lead-out portion include the same metal material.
  • the first electrode and the first electrode lead-out portion include the same metal material.
  • it further includes: a first electrode lead-out portion and a second electrode lead-out portion located on a side of the carrier substrate close to the ultrasonic emission structure;
  • the ultrasonic emission structure includes: a first electrode on the side of the first piezoelectric film layer away from the carrier substrate, and a second electrode on the side of the first piezoelectric film layer close to the carrier substrate ;
  • the first electrode lead-out portion is coupled with the second electrode, and the second electrode lead-out portion is coupled with the first electrode.
  • it further includes: a second conductive connection portion located on the side of the carrier substrate close to the ultrasonic emitting structure;
  • the ultrasonic receiving structure includes: a third electrode located on the side of the second piezoelectric film layer away from the carrier substrate, and a plurality of second electrodes located on the side of the second piezoelectric film layer close to the carrier substrate Four electrodes
  • the third electrode is coupled to the first electrode lead-out portion, and the third electrode is directly coupled to the second electrode in contact;
  • One end of the second conductive connection portion is coupled to the second electrode lead-out portion, and the other end is coupled to the first electrode; the second conductive connection portion is insulated from the third electrode.
  • the ultrasonic transmitting structure further includes: a first conductive connection portion coupled with the first electrode;
  • One end of the first conductive connection portion is coupled to the first electrode, and the other end extends to the side of the first piezoelectric film layer close to the carrier substrate and directly contacts the second conductive connection portion Coupling; the first conductive connection portion is insulated from the second electrode.
  • the first conductive connecting portion includes a silver glue material.
  • the ultrasonic transmitting structure further includes: a lead wire;
  • the edge of the first electrode on the side close to the lead-out portion of the second electrode extends beyond the edge of the first piezoelectric film layer; the edge of the first electrode that extends beyond the first piezoelectric film layer is provided with lead hole;
  • One end of the lead wire is coupled to the second electrode lead part, and the other end is coupled to the first electrode through the lead hole.
  • the second conductive connecting portion includes: a material layer located on a side of the carrier substrate close to the ultrasonic emitting structure, and a material layer located on a side of the material layer away from the carrier substrate Metal layer.
  • the material layer and the second piezoelectric film layer are made of the same material, and the material layer and the second piezoelectric film layer are provided in the same layer.
  • the first electrode and the second electrode include the same metal material
  • the first electrode lead-out portion and the second electrode lead-out portion include the same metal material.
  • the first electrode and the first electrode lead-out portion include the same metal material.
  • the material of the first piezoelectric film layer is lead zirconate titanate piezoelectric ceramic or piezoelectric electret material.
  • an embodiment of the present disclosure also provides a display panel, which includes a display light emitting device, and the above-mentioned ultrasonic sensor located on a side of the display light emitting device away from the display surface.
  • an embodiment of the present disclosure also provides a display device, which includes: the above-mentioned display panel.
  • Fig. 1 is a schematic diagram of a cross-section of an ultrasonic sensor provided by related art
  • FIG. 2 is a schematic cross-sectional view of an ultrasonic sensor provided by an embodiment of the disclosure
  • FIG. 3 is a schematic cross-sectional view of an ultrasonic sensor provided by an embodiment of the disclosure.
  • FIG. 4 is a schematic cross-sectional view of an ultrasonic sensor provided by an embodiment of the disclosure.
  • FIG. 5 is a schematic cross-sectional view of an ultrasonic sensor provided by an embodiment of the disclosure.
  • FIG. 6 is a schematic cross-sectional view of an ultrasonic sensor provided by an embodiment of the disclosure.
  • FIG. 7 is a schematic cross-sectional view of an ultrasonic sensor provided by an embodiment of the disclosure.
  • FIG. 8 is a schematic cross-sectional view of an ultrasonic sensor provided by an embodiment of the disclosure.
  • FIG. 9 is a schematic diagram of a structure of a display panel provided by an embodiment of the disclosure.
  • the ultrasonic sensor includes: a carrier substrate 100, a receiving electrode 200 and a transmitting electrode 300 on the carrier substrate 100, and a sensor between the receiving electrode 200 and the transmitting electrode 300 Piezoelectric material layer 400.
  • the ultrasonic sensor integrates an ultrasonic transmitting structure and an ultrasonic receiving structure.
  • the ultrasonic sensor serves as an ultrasonic transmitting structure.
  • the piezoelectric material layer 400 can be generated by applying a square wave signal between the receiving electrode 200 and the transmitting electrode 300. The deformation generates ultrasonic waves.
  • the ultrasonic sensor is used as an ultrasonic receiving structure, which can receive ultrasonic waves by applying a fixed voltage signal to the transmitting electrode 300 and receiving the output signal of each receiving electrode 200.
  • a binding electrode 500 is also provided on the carrier substrate 100, and the binding electrode 500 can be used to realize a binding connection between the ultrasonic sensor and other devices.
  • the ultrasonic transmitting structure and the ultrasonic receiving structure share the piezoelectric material layer, which has the problem of low transmitting performance and low utilization of ultrasonic signals.
  • embodiments of the present disclosure provide an ultrasonic sensor, a display panel, and a display device.
  • an ultrasonic sensor provided by an embodiment of the present disclosure includes:
  • the ultrasonic emitting structure 20 is located on the carrier substrate 10; the ultrasonic emitting structure 20 includes: a first piezoelectric film layer 201;
  • the ultrasonic receiving structure 30 is located on the carrier substrate 10; the ultrasonic receiving structure 30 includes: a second piezoelectric film layer 301;
  • the piezoelectric constant of the first piezoelectric film layer 201 is greater than the piezoelectric constant of the second piezoelectric film layer 301.
  • the ultrasonic transmitting structure and the ultrasonic receiving structure respectively have different piezoelectric film layers.
  • the ultrasonic transmitting structure includes a first piezoelectric film layer
  • the ultrasonic receiving structure includes a second piezoelectric film layer.
  • the piezoelectric constant of the piezoelectric film layer is greater than the piezoelectric constant of the second piezoelectric film layer, so that the transmitting performance of the ultrasonic transmitting structure is better, so that the transmitting effect of the ultrasonic transmitting structure can be improved.
  • the ultrasonic transmitting structure may adopt a piezoelectric film layer with a larger piezoelectric constant.
  • the material of the first piezoelectric film layer 201 may be lead zirconate titanate piezoelectric ceramic PZT or piezoelectric electret material.
  • the material of the second piezoelectric film layer 301 may be polyvinylidene fluoride PVDF.
  • the first piezoelectric film layer 201 may also include multiple sub-film layers, and the material of each sub-film layer may be lead zirconate titanate piezoelectric ceramics.
  • the ultrasonic transmitting structure 20 and the ultrasonic receiving structure 20 are located on the same side of the carrier substrate 10. In this way, when the above-mentioned ultrasonic sensor is combined with the display panel, The side of the carrier substrate 10 away from the ultrasonic emitting structure 20 can be attached to the side of the display panel away from the display surface, so that the resulting display device can realize ultrasonic fingerprint recognition and touch functions.
  • the ultrasonic transmitting structure 20 is located on the side of the ultrasonic receiving structure 30 away from the carrier substrate 10.
  • the side of the carrier substrate 10 facing away from the ultrasonic emitting structure 20 can be attached to the side of the display panel facing away from the display surface, and the ultrasonic emitting structure 20 is disposed on the ultrasonic receiving structure 30 away from the carrier substrate 10 On one side, the ultrasonic receiving structure 30 can be made closer to the display surface of the display device.
  • the intensity of the ultrasonic waves received by the ultrasonic receiving structure 30 is stronger, making fingerprint recognition or touch detection more sensitive, accurate.
  • the electrodes of the ultrasonic receiving structure 30 can be led to the supporting substrate 10 to facilitate coupling of the ultrasonic receiving structure with other devices.
  • the electrode extraction method of the ultrasonic emitting structure is set to make the ultrasonic emitting structure easier to couple with other devices, which will be described in detail below with reference to the accompanying drawings.
  • the above-mentioned ultrasonic sensor may further include: a protective layer 40 located between the ultrasonic transmitting structure 20 and the ultrasonic receiving structure 30, and a protective layer 40 located on the side of the protective layer 40 close to the ultrasonic transmitting structure 30
  • the ultrasonic transmitting structure 20 includes: a first electrode 202 on the side of the first piezoelectric film 201 away from the carrier substrate 10, and a second electrode 203 on the side of the first piezoelectric film 201 close to the carrier substrate 10;
  • the first electrode extraction portion 401 is coupled to the second electrode 203, and the second electrode extraction portion 402 is coupled to the first electrode 202.
  • the first electrode 202 and the second electrode 203 in the ultrasonic emitting structure 20 can be led out to the side of the protective layer 40 close to the ultrasonic emitting structure 20 to facilitate the coupling of the ultrasonic emitting structure 20 with other devices.
  • the protective layer 40 may be a glass substrate, or a flexible substrate, for example, a flexible substrate made of polyimide (PI) material.
  • PI polyimide
  • OCA optically clear adhesive
  • the ultrasonic emitting structure 20 may be fabricated on the protective layer 40, and then the protective layer 40 is bonded to the ultrasonic receiving structure 30 by optically transparent glue.
  • the ultrasonic transmitting structure 20 includes a first electrode 202 and a second electrode 203, wherein the first electrode 202 and the second electrode 203 are respectively distributed on both sides of the first piezoelectric film layer 201.
  • a first electrode lead-out portion 401 and a second electrode lead-out portion 402 are provided on the side of the protective layer 40 close to the ultrasonic emission structure 20.
  • first electrode lead-out portion 401 and the second electrode lead-out portion 402 may be respectively disposed on the two ends of the protective layer 40 facing the ultrasonic emitting structure 20.
  • the lead-out ends of the first electrode 202 and the second electrode 203 on the ultrasonic transmitting structure 20 can be located on the same side of the first piezoelectric film layer 201 or on both sides of the first piezoelectric film layer 201. According to the different positions of the lead-out ends of the first electrode 202 and the second electrode 203, the ultrasonic transmitting structure 20 has at least the following two lead-out methods, which will be described in detail below with reference to the drawings.
  • the above-mentioned ultrasonic transmitting structure 20 may further include: a first conductive connection portion 2021 coupled to the first electrode 202;
  • One end of the first conductive connection portion 2021 is coupled to the first electrode 202, and the other end extends to the side of the first piezoelectric film 201 close to the carrier substrate 10, and is directly coupled to the second electrode lead-out portion 402;
  • the conductive connecting portion 2021 is insulated from the second electrode 203;
  • the second electrode 203 is in direct contact and coupled with the first electrode lead-out portion 401.
  • the leading end of the first electrode 202 is the part of the first conductive connecting portion 2021 located on the side of the first piezoelectric film 201 close to the carrier substrate 10, and the leading end of the second electrode 203 is the second electrode 203 close to the carrier.
  • the surface on one side of the substrate 10, that is, the leading ends of the first electrode 202 and the second electrode 203 are located on the same side of the first piezoelectric film layer 201.
  • the first conductive connecting portion 2021 is insulated from the second electrode 203.
  • the first conductive connecting portion 2021 can be arranged at a position with a set distance from the second electrode 203 to avoid the first electrode 202 and the second electrode 203. Short.
  • the first electrode lead-out portion 401 and the second electrode lead-out portion 402 may both be metal materials, the first electrode lead-out portion 401 is in direct contact with the second electrode 203, and the second electrode lead-out portion 402 is in direct contact with the first conductive connection portion. 2021 is in direct contact to realize the first electrode 202 is led out to the protective layer 40 through the second electrode lead-out portion 402, and similarly, the second electrode 203 is led out to the protective layer 40 through the first electrode lead-out portion 401.
  • the above-mentioned first conductive connection portion 2021 may include a silver glue material, so that it is easier to couple the first conductive connection portion 2021 and the first electrode 202 Specifically, the above-mentioned first conductive connection portion 2021 can be made entirely of silver glue material, or the part of the first conductive connection portion 2021 located on the side of the first piezoelectric film layer 201 close to the carrier substrate 10 is made of metal material, and the rest Made of silver glue material.
  • first conductive connecting portion 2021 can also be made of other materials, for example, a metal material can be used.
  • a metal material can be used to make a part of the first conductive layer on the side of the first piezoelectric film layer 201 close to the carrier substrate 10.
  • the connection part is then made of a metal material to make the remaining part of the conductive connection part and contact the first electrode 202.
  • the above-mentioned ultrasonic transmitting structure 20 further includes: a lead wire L;
  • the edge of the first electrode 202 on the side close to the second conductive lead-out portion 402 extends beyond the edge of the first piezoelectric film layer 201; the edge of the first electrode 202 that extends beyond the first piezoelectric film layer 201 is provided with an extraction hole 50;
  • One end of the lead wire L is coupled to the second conductive lead part 402, and the other end is coupled to the first electrode 202 through the lead hole 50;
  • the second electrode 203 is directly coupled to the first electrode lead-out portion 401 in contact.
  • the leading end of the first electrode 202 is the end of the first electrode 202 that extends beyond the first piezoelectric film 201
  • the leading end of the second electrode 203 is the surface of the second electrode 203 on the side close to the carrier substrate 10, that is, the The leading ends of the first electrode 202 and the second electrode 203 are respectively located on both sides of the first piezoelectric film layer 201.
  • first electrode lead-out portion 401 and the second electrode lead-out portion 402 can be both metallic materials, the first electrode lead-out portion 401 is in direct contact with the first electrode 202, the second electrode 203 can reserve a lead hole 50, and the second electrode lead-out The portion 402 leads the second electrode 203 from the lead hole 50 through the lead wire L.
  • the foregoing first electrode 202 and the foregoing second electrode 203 comprise the same metal material;
  • the first electrode lead-out portion 401 and the second electrode lead-out portion 402 include the same metal material.
  • the first electrode lead-out portion 401 and the second electrode lead-out portion 402 can be manufactured using the same manufacturing process, which saves manufacturing costs.
  • the above-mentioned first electrode 202 and the first electrode lead-out portion 401 comprise the same metal material, that is, the first electrode 202, the second electrode 203, and the first electrode lead-out portion 401 comprise the same metal material.
  • the portion 401 and the second electrode lead-out portion 402 may include the same metal material.
  • the first electrode 202, the second electrode 203, the first electrode lead-out portion 401 and the second electrode lead-out portion 402 can all be made of silver with good conductivity. Take the structure shown in FIG. 4 as an example, the arrow in the figure As shown, the second electrode 203 and the first electrode lead-out portion 401 can be coupled by metal bonding, and the first conductive connecting portion 2021 can be coupled by metal bonding, which can better transmit ultrasonic signals.
  • the metal materials included in the first electrode 202 and the first electrode lead-out portion 401 may also be different.
  • the first electrode 202 and the second electrode 203 may be made of silver
  • the first electrode lead-out portion 401 and the second electrode lead-out portion 401 may be made of silver.
  • the portion 402 can be made of molybdenum. Taking the structure shown in FIG. 5 as an example, as shown by the arrow in the figure, the second electrode 203 and the first electrode lead-out portion 401 can also be coupled by metal bonding, which can be better Ground transmission of ultrasonic signals.
  • Both the first extraction method and the second extraction method described above can lead the electrodes of the ultrasonic emitting structure 20 to the protective layer 40, so that other devices can pass through the first electrode lead-out portion 401 and the second electrode provided on the protective layer 40
  • the lead portion 402 realizes the coupling with the ultrasonic transmitting structure 20, which reduces the amount of wires and facilitates the bonding process.
  • the effective emitting area formed by the first electrode 202 and the second electrode 203 of the first piezoelectric film layer 201 is the same as the effective receiving area of the second piezoelectric film layer 301, so that more ultrasonic signals can be transmitted.
  • the protective layer 40 By arranging the protective layer 40 between the ultrasonic transmitting structure 20 and the ultrasonic receiving structure 30, the protective layer 40 can be regarded as the carrier of the ultrasonic transmitting structure 20, thereby facilitating the production of the ultrasonic transmitting structure 20 separately, and then carrying the ultrasonic transmitting structure.
  • the protective layer 40 of 20 is attached to the surface of the ultrasonic receiving structure 30.
  • a protective layer may not be provided between the ultrasonic transmitting structure 20 and the ultrasonic receiving structure 30.
  • the electrode lead-out end of the ultrasonic emitting structure 20 may be arranged on the carrier substrate 10, that is, the carrier substrate 10 is provided with a first electrode lead-out portion 401 for drawing out the second electrode 203 and a first electrode lead-out portion 401 for drawing out the first electrode 202.
  • the above-mentioned ultrasonic sensor provided by the embodiment of the present disclosure may further include: a first electrode lead-out portion 401 and a second electrode lead-out portion 402 located on the side of the carrier substrate 10 close to the ultrasonic transmitting structure 20;
  • the ultrasonic transmitting structure 20 includes: a first electrode 202 on the side of the first piezoelectric film 201 away from the carrier substrate 10, and a second electrode 203 on the side of the first piezoelectric film 201 close to the carrier substrate 10;
  • the first electrode extraction portion 401 is coupled to the second electrode 203, and the second electrode extraction portion 402 is coupled to the first electrode 202.
  • the second electrode lead-out portion 402 is connected to The first electrode 202 is coupled, so that the electrodes of the ultrasonic emitting structure 20 can be drawn to the surface of the carrier substrate 10, so that the ultrasonic emitting structure 20 can be easily coupled to other devices.
  • the above-mentioned ultrasonic sensor provided by the embodiment of the present disclosure may further include: a second conductive connecting portion 502 located on the side of the carrier substrate 10 close to the ultrasonic transmitting structure 20;
  • the ultrasonic receiving structure 502 includes: a third electrode 501 on the side of the second piezoelectric film 301 away from the carrier substrate 10, and a plurality of fourth electrodes 302 on the side of the second piezoelectric film 301 close to the carrier substrate 10;
  • the third electrode 501 is coupled to the first electrode lead-out portion 401, and the third electrode 501 is directly coupled to the second electrode 203 in contact;
  • One end of the second conductive connection portion 502 is coupled to the second electrode lead-out portion 402, and the other end is coupled to the first electrode 202; the second conductive connection portion 502 is insulated from the third electrode 501.
  • the second electrode 203 can be drawn to the surface of the carrier substrate 10, and the first The electrode 202 can be coupled to the second electrode lead-out part 402 through the second conductive connection part 502, so that the first electrode 202 can be lead out to the surface of the carrier substrate 10 to facilitate coupling of the ultrasonic emitting structure 20 with other devices.
  • the second conductive connection portion 502 is insulated from the third electrode 501, which can prevent the first electrode 202 and the second electrode 203 from being short-circuited.
  • a square wave voltage can be applied to the first electrode 202 and a fixed voltage is applied to the second electrode 203 to drive the first piezoelectric film 201 to deform to emit ultrasonic waves.
  • the ultrasonic receiving stage By applying a fixed voltage to the first electrode 202, and applying a fixed voltage to the second electrode 203 and the third electrode 501, and receiving signals fed back from the fourth electrodes 302, the ultrasonic intensity distribution can be obtained.
  • the above-mentioned second conductive connecting portion 502 includes: a material layer on the side of the carrier substrate close to the ultrasonic emitting structure 20, and a material layer on the side of the material layer away from the carrier substrate. A metal layer, so that the thickness of the second conductive connection portion 502 is the same as or similar to the thickness of the second piezoelectric film layer 301 and the third electrode 501.
  • the material layer and the second piezoelectric film layer are made of the same material, and the material layer and the second piezoelectric film layer are provided in the same layer. Therefore, during the manufacturing process, the material layer and the second piezoelectric film layer can be manufactured by the same process, which saves manufacturing costs. By providing the material layer, the metal layer can be made thinner, and the process requirements are lower.
  • the ultrasonic receiving structure 30 when fabricating the ultrasonic receiving structure 30, a whole piezoelectric film layer can be fabricated, and then the second piezoelectric film layer can be imaged to obtain the material layer and the second piezoelectric film layer whose end surfaces are separated from each other. Afterwards, the entire metal film layer is fabricated, and the entire metal film layer is also patterned to form the third electrode 501 on the second piezoelectric film layer 301 and the metal layer on the material layer without the need In addition, the second conductive connecting portion 502 is separately manufactured, which simplifies the manufacturing process.
  • metal materials can also be used to directly fabricate the second conductive connecting portion 502 with the same or similar thickness as the second piezoelectric film layer 301 and the third electrode 501, which is not limited here.
  • the above-mentioned ultrasonic transmitting structure 20 may further include: a first conductive connection portion 2021 coupled to the first electrode 202;
  • One end of the first conductive connection portion 2021 is coupled to the first electrode 202, and the other end extends to the side of the first piezoelectric film layer 201 close to the carrier substrate 10, and is directly coupled to the second conductive connection portion 502;
  • the conductive connection portion 2021 is insulated from the second electrode 203.
  • the coupling between the first electrode 202 and the second conductive connection portion 402 can be achieved, so that the first electrode 202 can be led out to the surface of the carrier substrate 10.
  • the first conductive connecting portion 2021 and the second conductive connecting portion 502 can be coupled by metal bonding, and the second electrode 203 and the third electrode 501 can also be coupled by metal bonding. Coupling.
  • the first conductive connecting portion 2021 is insulated from the second electrode 203.
  • the first conductive connecting portion 2021 can be arranged at a position with a set distance from the second electrode 203 to avoid the first electrode 202 and the second electrode 203. Short.
  • the above-mentioned first conductive connection portion 2021 may include a silver glue material.
  • the first conductive connection portion 2021 may be entirely made of silver glue material, or may be made of a metal material.
  • the connecting portion 2021 is located at a part of the first piezoelectric film layer 201 close to the carrier substrate, and the remaining part of the first conductive connecting portion 2021 is made of silver glue material.
  • the above-mentioned ultrasonic transmitting structure 20 may further include: a lead wire L;
  • the edge of the first electrode 202 on the side close to the second electrode lead-out portion 402 extends beyond the edge of the first piezoelectric film layer 201; the edge of the first electrode 202 that extends beyond the first piezoelectric film layer 201 is provided with an extraction hole 50;
  • One end of the lead wire L is coupled to the second electrode lead part 402, and the other end is coupled to the first electrode 202 through the lead hole 50.
  • the second electrode extraction portion 402 leads the second electrode 203 from the extraction hole 50 through the lead wire L, thereby leading the first electrode 202 to the surface of the carrier substrate 10 through the third electrode
  • the 501 is coupled to the first electrode lead-out portion 401 to directly contact the second electrode 203, and the second electrode 203 can be drawn to the surface of the carrier substrate 10.
  • the above-mentioned first electrode 202 and the second electrode 203 include the same metal material
  • the first electrode lead-out portion 401 and the second electrode lead-out portion 402 include the same metal material.
  • the first electrode lead-out portion 401 and the second electrode lead-out portion 402 can be manufactured using the same manufacturing process, which saves manufacturing costs.
  • the first electrode 202 and the first electrode lead-out portion 401 include the same metal material. That is, the metal materials of the first electrode 202, the second electrode 203, the first electrode lead-out portion 401, and the second electrode lead-out portion 402 are all the same, for example, the first electrode 202, the second electrode 203, and the first electrode lead-out portion Both the 401 and the second electrode lead-out portion 402 can be made of silver with good conductivity. Taking the structure shown in FIG.
  • the second electrode 203 and the third electrode 501 can be bonded by metal
  • the first conductive connection portion 2021 and the second conductive connection portion 502 can be coupled by metal bonding, which can better transmit ultrasonic signals.
  • the metal materials included in the first electrode 202 and the first electrode lead-out portion 401 may also be different.
  • the first electrode 202 and the second electrode 203 may be made of silver
  • the first electrode lead-out portion 401 and the second electrode lead-out portion 401 may be made of silver.
  • the portion 402 can be made of molybdenum. Taking the structure shown in FIG. 8 as an example, as shown by the arrow in the figure, the second electrode and the third electrode 501 can be coupled by metal bonding, which can better transmit ultrasonic waves. signal.
  • an embodiment of the present disclosure further provides a display panel.
  • the display panel includes a display light emitting device 600 and the aforementioned ultrasonic sensor located on a side of the display light emitting device away from the display surface.
  • the display light emitting device 600 may be an organic electroluminescent device. Since the principle of solving the problem of the display panel is similar to the above-mentioned ultrasonic sensor, the implementation of the display panel can refer to the implementation of the above-mentioned ultrasonic sensor, and the repetition will not be repeated.
  • the ultrasonic receiving structure and the ultrasonic emitting structure can be fabricated on one side of the carrier substrate, and then the other side of the carrier substrate is bonded to the display light emitting device 600.
  • the above-mentioned ultrasonic sensor can also be integrated into the display light-emitting device, and the combination of the ultrasonic sensor and the display light-emitting device is not limited here.
  • the display panel can realize the ultrasonic fingerprint recognition and touch detection functions, and the effective transmitting and receiving area of the ultrasonic sensor is set to be consistent with the display area of the display light-emitting device, which can realize the display The full-screen fingerprint recognition function of the panel.
  • the display panel may also include other necessary devices.
  • it may also include: a glass cover 700 located on the display surface of the display light emitting device 600, etc., which will not be repeated here.
  • the embodiments of the present disclosure also provide a display device, including the above-mentioned display panel.
  • the display device can be applied to mobile phones, tablet computers, televisions, monitors, notebook computers, digital photo frames, navigators, etc. Functional products or components. Since the principle of solving the problems of the display device is similar to that of the above-mentioned display panel, the implementation of the display device can refer to the implementation of the above-mentioned display panel, and the repetition will not be repeated.
  • the ultrasonic transmitting structure adopts the first piezoelectric film layer
  • the ultrasonic receiving structure adopts the second piezoelectric film layer
  • the pressure of the first piezoelectric film layer is The electric constant is greater than the piezoelectric constant of the second piezoelectric film layer, so that the ultrasonic sensor has better emission performance, so that the ultrasonic sensor can achieve a better emission effect.
  • the embodiments of the present application lead the electrodes of the ultrasonic emitting structure to the carrier substrate or the protective layer, so that other devices can be directly connected to the electrodes of the ultrasonic emitting structure through the electrode lead-out portion of the carrier substrate or the protective layer, which reduces the use of wires and is beneficial to Binding process.

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  • Transducers For Ultrasonic Waves (AREA)

Abstract

本公开提供了一种超声波传感器、显示面板及显示装置，该超声波传感器，包括：承载基板；超声波发射结构，位于承载基板之上；超声波发射结构，包括：第一压电膜层；超声波接收结构，位于承载基板之上；超声波接收结构，包括：第二压电膜层；其中，第一压电膜层的压电常数大于第二压电膜层的压电常数。超声波发射结构和超声波接收结构分别具有不同的压电膜层，且第一压电膜层的压电常数大于第二压电膜层的压电常数，因而超声波发射结构的发射性能更好，从而可以提高超声波发射结构的发射效果。

Description

超声波传感器、显示面板及显示装置
相关申请的交叉引用
本申请要求在2019年05月16日提交中国专利局、申请号为201910405303.4、申请名称为“一种超声波传感器和显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及传感器技术领域，特别涉及一种超声波传感器、显示面板及显示装置。
背景技术
随着显示技术的高速发展，具有生物识别功能的电子设备逐渐进入人们的生活与工作中。例如超声波指纹识别技术是生物识别技术中应用较为广泛的技术之一。
然而，超声波指纹识别技术中，超声波接收结构和超声波发射结构共用压电材料的超声波传感器，存在发射性能较低的问题，对超声信号的利用率较低。
发明内容
本公开实施提供的超声波传感器，其中，包括：
承载基板；
超声波发射结构，位于所述承载基板之上；所述超声波发射结构，包括：第一压电膜层；
超声波接收结构，位于所述承载基板之上；所述超声波接收结构，包括：第二压电膜层；
其中，所述第一压电膜层的压电常数大于所述第二压电膜层的压电常数。
可选地，在本公开实施例中，所述超声波发射结构与所述超声波接收结构位于所述承载基板的同一侧。
可选地，在本公开实施例中，所述超声波发射结构位于所述超声波接收结构背离所述承载基板的一侧。
可选地，在本公开实施例中，还包括：位于所述超声波发射结构与所述超声波接收结构之间的保护层，以及位于所述保护层靠近所述超声波发射结构一侧的第一电极引出部和第二电极引出部；
所述超声波发射结构，包括：位于所述第一压电膜层背离所述承载基板一侧的第一电极，以及位于所述第一压电膜层靠近所述承载基板一侧的第二电极；
所述第一电极引出部与所述第二电极耦接，所述第二电极引出部与所述第一电极耦接。
可选地，在本公开实施例中，所述超声波发射结构，还包括：与所述第一电极耦接的第一导电连接部；
所述第一导电连接部的一端与所述第一电极耦接，另一端延伸至所述第一压电膜层靠近所述承载基板的一侧，并与所述第二电极引出部直接接触耦接；所述第一导电连接部与所述第二电极绝缘设置；
所述第二电极与所述第一电极引出部直接接触耦接。
可选地，在本公开实施例中，所述第一导电连接部包括银胶材料。
可选地，在本公开实施例中，所述超声波发射结构，还包括：引出导线；
所述第一电极靠近所述第二导电引出部的一侧的边缘超出所述第一压电膜层的边缘；在所述第一电极超出所述第一压电膜层的边缘设有引出孔；
所述引出导线的一端与所述第二导电引出部耦接，另一端通过所述引出孔与所述第一电极耦接；
所述第二电极与所述第一电极引出部直接接触耦接。
可选地，在本公开实施例中，所述第一电极与所述第二电极包括相同的金属材料；
所述第一电极引出部与所述第二电极引出部包括相同的金属材料。
可选地，在本公开实施例中，所述第一电极与所述第一电极引出部包括相同的金属材料。
可选地，在本公开实施例中，还包括：位于所述承载基板靠近所述超声波发射结构一侧的第一电极引出部和第二电极引出部；
所述超声波发射结构，包括：位于所述第一压电膜层背离所述承载基板一侧的第一电极，以及位于所述第一压电膜层靠近所述承载基板一侧的第二电极；
所述第一电极引出部与所述第二电极耦接，所述第二电极引出部与所述第一电极耦接。
可选地，在本公开实施例中，还包括：位于所述承载基板靠近所述超声波发射结构一侧的第二导电连接部；
所述超声波接收结构，包括：位于所述第二压电膜层背离所述承载基板一侧的第三电极，以及位于所述第二压电膜层靠近所述承载基板一侧的多个第四电极；
所述第三电极与所述第一电极引出部耦接，且所述第三电极与所述第二电极直接接触耦接；
所述第二导电连接部的一端与所述第二电极引出部耦接，另一端与所述第一电极耦接；所述第二导电连接部与所述第三电极绝缘设置。
可选地，在本公开实施例中，所述超声波发射结构，还包括：与所述第一电极耦接的第一导电连接部；
所述第一导电连接部的一端与所述第一电极耦接，另一端延伸至所述第一压电膜层靠近所述承载基板的一侧，并与所述第二导电连接部直接接触耦接；所述第一导电连接部与所述第二电极绝缘设置。
可选地，在本公开实施例中，所述第一导电连接部包括银胶材料。
可选地，在本公开实施例中，所述超声波发射结构，还包括：引出导线；
所述第一电极靠近所述第二电极引出部的一侧的边缘超出所述第一压电 膜层的边缘；在所述第一电极超出所述第一压电膜层的边缘设有引出孔；
所述引出导线的一端与所述第二电极引出部耦接，另一端通过所述引出孔与所述第一电极耦接。
可选地，在本公开实施例中，所述第二导电连接部，包括：位于承载基板靠近所述超声波发射结构一侧的材料层，以及位于所述材料层背离所述承载基板一侧的金属层。
可选地，在本公开实施例中，所述材料层与所述第二压电膜层的材料相同，且所述材料层与所述第二压电膜层同层设置。
可选地，在本公开实施例中，所述第一电极与所述第二电极包括相同的金属材料；
所述第一电极引出部与所述第二电极引出部包括相同的金属材料。
可选地，在本公开实施例中，所述第一电极与所述第一电极引出部包括相同的金属材料。
可选地，在本公开实施例中，所述第一压电膜层的材料为锆钛酸铅压电陶瓷或压电驻极体材料。
相应地，本公开实施例还提供了一种显示面板，其中，包括显示发光器件，以及位于所述显示发光器件背离显示面一侧的上述超声波传感器。
相应地，本公开实施例还提供了一种显示装置，其中，包括：上述显示面板。
附图说明
图1为相关技术提供的超声波传感器的截面的示意图；
图2为本公开实施例提供的超声波传感器的一种截面示意图；
图3为本公开实施例提供的超声波传感器的一种截面示意图；
图4为本公开实施例提供的超声波传感器的一种截面示意图；
图5为本公开实施例提供的超声波传感器的一种截面示意图；
图6为本公开实施例提供的超声波传感器的一种截面示意图；
图7为本公开实施例提供的超声波传感器的一种截面示意图；
图8为本公开实施例提供的超声波传感器的一种截面示意图；
图9为本公开实施例提供的显示面板的一种结构示意图。
具体实施方式
在超声波指纹识别技术中，如图1所示，该超声波传感器，包括：承载基板100，以及位于承载基板100上的接收电极200和发射电极300，以及位于接收电极200和发射电极300之间的压电材料层400。该超声波传感器集成有超声波发射结构和超声波接收结构，在超声波发射阶段，该超声波传感器作为超声波发射结构，可以通过向接收电极200和发射电极300之间施加方波信号，使压电材料层400发生形变产生超声波，在超声波接收阶段，该超声波传感器作为超声波接收结构，可以通过向发射电极300施加固定电压信号，并接收各接收电极200的输出信号，来接收超声波。此外，在承载基板100上还设有绑定电极500，可以通过绑定电极500实现超声波传感器与其他器件的绑定连接。
对于图1所示的超声波传感器，超声波发射结构与超声波接收结构共用压电材料层，存在发射性能较低的问题，对超声信号的利用率较低。
基于此，本公开实施例提供了一种超声波传感器、显示面板及显示装置。
下面结合附图，对本公开实施例提供的超声波传感器、显示面板及显示装置的具体实施方式进行详细地说明。附图中各膜层的厚度和形状不反映真实比例，目的只是示意说明本公开内容。
请参见图2，本公开实施例提供的一种超声波传感器，包括：
承载基板10；
超声波发射结构20，位于承载基板10之上；超声波发射结构20，包括：第一压电膜层201；
超声波接收结构30，位于承载基板10之上；超声波接收结构30，包括：第二压电膜层301；
其中，第一压电膜层201的压电常数大于第二压电膜层301的压电常数。
本公开实施例提供的超声波传感器，超声波发射结构和超声波接收结构分别具有不同的压电膜层，超声波发射结构包括第一压电膜层，超声波接收结构包括第二压电膜层，且第一压电膜层的压电常数大于第二压电膜层的压电常数，因而超声波发射结构的发射性能更好，从而可以提高超声波发射结构的发射效果。
在具体实施时，本公开实施例提供的上述超声波传感器中，由于超声波发射结构和超声波接收结构分别具有不同的压电膜层，因而超声波发射结构可以采用压电常数较大的压电膜层，具体地，第一压电膜层201的材料可以为锆钛酸铅压电陶瓷PZT或压电驻极体材料。第二压电膜层301的材料可以是聚偏氟乙烯PVDF。例如，锆钛酸铅压电陶瓷或压电驻极体材料的压电常数较高，可以使超声波发射结构的发射量更大。在一些实施例中，为了进一步提高超声波发射结构20的发射效果，第一压电膜层201也可以包括多个子膜层，每个子膜层的材料均可以是锆钛酸铅压电陶瓷。
在实际应用中，本公开实施例提供的上述超声波传感器中，同样参照图2，超声波发射结构20与超声波接收结构20位于承载基板10的同一侧，这样，上述超声波传感器在与显示面板结合时，可以将承载基板10背离超声波发射结构20的一侧与显示面板背离显示面的一侧贴合，以使得到的显示装置实现超声波指纹识别和触控功能。
进一步地，本公开实施例提供的上述超声波传感器中，如图2所示，超声波发射结构20位于超声波接收结构30背离承载基板10的一侧。
将超声波传感器与显示面板结合时，可以将承载基板10背离超声波发射结构20的一侧与显示面板背离显示面的一侧贴合，将超声波发射结构20设置于超声波接收结构30背离承载基板10的一侧，可以使超声波接收结构30更靠近显示装置的显示面，当用户触摸显示装置的显示面时，超声波接收结构30接收到的超声波的强度较强，使指纹识别或触控检测更加灵敏、准确。
在具体实施时，由于超声波接收结构30与承载基板10的距离较近，因 而，可以将超声波接收结构30的电极引出至承载基板10上，以便于超声波接收结构与其他器件耦接。
由于超声波发射结构20与承载基板10的距离较远，因而，超声波发射结构20的电极不能直接引出至承载基板10上，导致超声波发射结构20不容易与其他器件耦接。本公开实施例中，对超声波发射结构的电极引出方式进行了设置，以使超声波发射结构更容易与其他器件耦接，以下结合附图进行详细说明。
请参见图3，本公开实施例提供的上述超声波传感器中，还可以包括：位于超声波发射结构20与超声波接收结构30之间的保护层40，以及位于保护层40靠近超声波发射结构30一侧的第一电极引出部401和第二电极引出部402；
超声波发射结构20，包括：位于第一压电膜层201背离承载基板10一侧的第一电极202，以及位于第一压电膜层201靠近承载基板10一侧的第二电极203；
第一电极引出部401与第二电极203耦接，第二电极引出部402与第一电极202耦接。
这种情况下，超声波发射结构20中的第一电极202和第二电极203可以引出至保护层40靠近超声波发射结构20的一侧，便于超声波发射结构20与其他器件耦接。
在一些实施例中，上述保护层40可以是玻璃基板，或者也可以是柔性基板，例如可以为采用聚酰亚胺(Polyimide，PI)材料制作的柔性基板。其中，保护层40靠近超声波接收结构30的一侧还可以设置光学透明胶(Optically Clear Adhesive，OCA)层，在实际工艺过程中，可以在保护层40上制作超声波发射结构20，然后将保护层40通过光学透明胶贴合到超声波接收结构30上。
超声波发射结构20包括第一电极202和第二电极203，其中，第一电极202和第二电极203分别分布在第一压电膜层201的两侧。在保护层40靠近 超声波发射结构20的一侧设置第一电极引出部401和第二电极引出部402，通过将第一电极引出部401设置为与第二电极203耦接，从而可以通过第一电极引出部401将第二电极203引出，将第二电极引出部402设置为与第一电极202耦接，从而可以通过第二电极引出部402将第一电极202引出。
在具体实施时，可以将第一电极引出部401和第二电极引出部402分别设置在保护层40面向超声波发射结构20的两端。
可选地，上述超声波发射结构20上的第一电极202和第二电极203的引出端可以位于第一压电膜层201的同一侧，也可以位于第一压电膜层201的两侧。根据第一电极202和第二电极203的引出端的设置位置的不同，超声波发射结构20至少具有以下两种引出方式，以下结合附图进行详细说明。
第一种引出方式：
请参见图4，上述超声波发射结构20，还可以包括：与第一电极202耦接的第一导电连接部2021；
第一导电连接部2021的一端与第一电极202耦接，另一端延伸至第一压电膜层201靠近承载基板10的一侧，并与第二电极引出部402直接接触耦接；第一导电连接部2021与第二电极203绝缘设置；
第二电极203与第一电极引出部401直接接触耦接。
也就是说，上述第一电极202的引出端为第一导电连接部2021位于第一压电膜层201靠近承载基板10一侧的部分，第二电极203的引出端为第二电极203靠近承载基板10一侧的表面，即第一电极202和第二电极203的引出端位于第一压电膜层201的同一侧。
将第一导电连接部2021与第二电极203绝缘设置，例如可以将第一导电连接部2021设置在与第二电极203具有设定距离的位置处，以避免第一电极202与第二电极203短接。
在具体实施时，第一电极引出部401和第二电极引出部402可以均为金属材料，第一电极引出部401与第二电极203直接接触，第二电极引出部402与第一导电连接部2021直接接触，以实现将第一电极202通过第二电极引出 部402引出至保护层40，同样，将第二电极203通过第一电极引出部401引出至保护层40。
具体地，本公开实施例提供的上述超声波传感器中，同样参照图4，上述第一导电连接部2021可以包括银胶材料，这样，更容易将第一导电连接部2021与第一电极202耦接，具体地，上述第一导电连接部2021可以完全采用银胶材料制作，或者，第一导电连接部2021位于第一压电膜层201靠近承载基板10一侧的部分采用金属材料制作，其余部分采用银胶材料制作。
此外，第一导电连接部2021也可以采用其他材料制作，例如可以采用金属材料，在制作工艺过程中，可以采用金属材料在第一压电膜层201靠近承载基板10一侧制作部分第一导电连接部，然后再采用金属材料制作其余部分导电连接部，并与第一电极202接触。
第二种引出方式：
请参见图5，上述超声波发射结构20，还包括：引出导线L；
第一电极202靠近第二导电引出部402的一侧的边缘超出第一压电膜层201的边缘；在第一电极202超出第一压电膜层201的边缘设有引出孔50；
引出导线L的一端与第二导电引出部402耦接，另一端通过引出孔50与第一电极202耦接；
第二电极203与第一电极引出部401直接接触耦接。
也就是说，第一电极202的引出端为第一电极202超出第一压电膜层201的一端，第二电极203的引出端为第二电极203靠近承载基板10一侧的表面，即第一电极202和第二电极203的引出端分别位于第一压电膜层201的两侧。
同样，第一电极引出部401和第二电极引出部402可以均为金属材料，第一电极引出部401与第一电极202直接接触，第二电极203可以预留引出孔50，第二电极引出部402通过引出导线L从引出孔50引出第二电极203。
在一种可能的实施方式中，本公开实施例提供的上述超声波传感器中，上述第一电极202与上述第二电极203包括相同的金属材料；
上述第一电极引出部401与第二电极引出部402包括相同的金属材料。
这样，在制作工艺过程中，上述第一电极引出部401与第二电极引出部402，可以采用同一制作工艺制作，节省制作成本。
进一步地，本公开实施例提供的上述超声波传感器中，上述第一电极202与第一电极引出部401包括相同的金属材料，也就是说，第一电极202、第二电极203、第一电极引出部401及第二电极引出部402可以包括相同的金属材料。例如，第一电极202、第二电极203以及第一电极引出部401与第二电极引出部402均可以由导电性良好的银制成，以图4所示的结构为例，如图中箭头所示，第二电极203与第一电极引出部401可以通过金属键合的方式进行耦接，第一导电连接部2021可以通过金属键合的方式进行耦接，可以更好地传递超声波信号。
此外，上述第一电极202与第一电极引出部401包括的金属材料也可以不同，例如，第一电极202和第二电极203可以由银制成，第一电极引出部401与第二电极引出部402可以由钼制成，以图5所示的结构为例，如图中箭头所示，第二电极203与第一电极引出部401也可以通过金属键合的方式耦接，可以较好地传递超声波信号。
上述第一种引出方式和第二种引出方式均可以将超声波发射结构20的电极引出至保护层40，这样其他器件就可以通过保护层40上所设置的第一电极引出部401和第二电极引出部402实现与超声波发射结构20的耦接，减少了导线的用量，利于绑定工艺。
且，第一压电膜层201的第一电极202和第二电极203所形成的有效发射区域，与第二压电膜层301的有效接收区域面积一致，从而可以更多地传递超声波信号。
通过在超声波发射结构20与超声波接收结构30之间设置保护层40，可以将保护层40看作是超声波发射结构20的承载体，从而利于单独制作超声波发射结构20，然后将承载有超声波发射结构20的保护层40贴附到超声波接收结构30的表面。
此外，本公开实施例提供的上述超声波传感器中，如图6所示，超声波 发射结构20和超声波接收结构30之间也可以不设置保护层。这种情况下，超声波发射结构20的电极引出端可以设置在承载基板10上，即承载基板10上设置用于引出第二电极203的第一电极引出部401和用于引出第一电极202的第二电极引出部402。
具体地，本公开实施例提供的上述超声波传感器中，如图6所示，还可以包括：位于承载基板10靠近超声波发射结构20一侧的第一电极引出部401和第二电极引出部402；
超声波发射结构20，包括：位于第一压电膜层201背离承载基板10一侧的第一电极202，以及位于第一压电膜层201靠近承载基板10一侧的第二电极203；
第一电极引出部401与第二电极203耦接，第二电极引出部402与第一电极202耦接。
通过在承载基板10靠近超声波发射结构20的一侧设置第一电极引出部401和第二电极引出部402，且第一电极引出部401与第二电极203耦接，第二电极引出部402与第一电极202耦接，从而可以将超声波发射结构20的电极引出至承载基板10的表面，以使超声波发射结构20便于与其他器件耦接。
在具体实施时，本公开实施例提供的上述超声波传感器中，还可以包括：位于承载基板10靠近超声波发射结构20一侧的第二导电连接部502；
超声波接收结构502，包括：位于第二压电膜层301背离承载基板10一侧的第三电极501，以及位于第二压电膜层301靠近承载基板10一侧的多个第四电极302；
第三电极501与第一电极引出部401耦接，且第三电极501与第二电极203直接接触耦接；
第二导电连接部502的一端与第二电极引出部402耦接，另一端与第一电极202耦接；第二导电连接部502与第三电极501绝缘设置。
通过将第三电极501与第一电极引出部401耦接，且第三电极501与第二电极203直接接触耦接，从而可以将第二电极203引出至承载基板10的表 面，并且，第一电极202可以通过第二导电连接部502与第二电极引出部402耦接，从而可以将第一电极202引出至承载基板10的表面，便于超声波发射结构20与其他器件耦接。
第二导电连接部502与第三电极501绝缘设置，可以避免第一电极202与第二电极203短接。
在实际应用中，在超声波发射阶段，可以通过向第一电极202施加方波电压，向第二电极203施加固定电压，驱动第一压电膜层201发生形变，以发出超声波，在超声波接收阶段，可以通过向第一电极202施加固定电压，并且向第二电极203与第三电极501施加固定电压，通过接收各第四电极302反馈的信号，得到超声波强度分布。
在具体实施时，本公开实施例提供的上述超声波传感器中，上述第二导电连接部502，包括：位于承载基板靠近超声波发射结构20一侧的材料层，以及位于材料层背离承载基板一侧的金属层，从而使第二导电连接部502的厚度与第二压电膜层301和第三电极501的厚度相同或者相近。
具体地，本公开实施例提供的上述超声波传感器中，材料层与第二压电膜层的材料相同，且材料层与第二压电膜层同层设置。因而，在制作工艺过程中，可以将材料层与第二压电膜层采用同一工艺制作，节省制作成本，通过设置材料层，金属层可以做的较薄，对工艺的要求较低。
具体地，在制作超声波接收结构30时，可以制作整面的压电膜层，然后对第二压电膜层进行图像化处理，得到端面相互间隔的材料层与第二压电膜层。之后再制作整面的金属膜层，同样对整面的金属膜层进行图案化处理，形成位于第二压电膜层301上的第三电极501，以及位于材料层的金属层，而不需要另外单独制作第二导电连接部502，简化了制作工艺。
另外，在具体实施时，也可以采用金属材料直接制作与第二压电膜层301和第三电极501的厚度相同或者相近的第二导电连接部502，此处不做限定。
在一种实现方式中，本公开实施例提供的上述超声波传感器中，如图7所示，上述超声波发射结构20，还可以包括：与第一电极202耦接的第一导 电连接部2021；
第一导电连接部2021的一端与第一电极202耦接，另一端延伸至第一压电膜层201靠近承载基板10的一侧，并与第二导电连接部502直接接触耦接；第一导电连接部2021与第二电极203绝缘设置。
通过设置第一导电连接部2021与第二导电连接部502，可以实现第一电极202与第二导电连接部402之间的耦接，从而可以将第一电极202引出至承载基板10的表面。在实际工艺过程中，可以通过金属键合的方式使第一导电连接部2021与第二导电连接部502耦接，并且，也可以通过金属键合的方式使第二电极203与第三电极501耦接。
将第一导电连接部2021与第二电极203绝缘设置，例如可以将第一导电连接部2021设置在与第二电极203具有设定距离的位置处，以避免第一电极202与第二电极203短接。
具体地，本公开实施提供的上述超声波传感器中，上述第一导电连接部2021可以包括银胶材料，例如，第一导电连接部2021可以完全采用银胶材料，也可以采用金属材料制作第一导电连接部2021位于第一压电膜层201靠近承载基板一侧的部分，采用银胶材料制作第一导电连接部2021的其余部分。
在另一种实现方式中，本公开实施例提供的上述超声波传感器中，如图8所示，上述超声波发射结构20，还可以包括：引出导线L；
第一电极202靠近第二电极引出部402的一侧的边缘超出第一压电膜层201的边缘；在第一电极202超出第一压电膜层201的边缘设有引出孔50；
引出导线L的一端与第二电极引出部402耦接，另一端通过引出孔50与第一电极202耦接。
通过在第一电极202预留引出孔50，第二电极引出部402通过引出导线L从引出孔50引出第二电极203，从而将第一电极202引出至承载基板10的表面，通过第三电极501耦接第一电极引出部401与第二电极203直接接触，可以将第二电极203引出至承载基板10的表面。
在具体实施时，本公开实施提供的上述超声波传感器中，上述第一电极 202与第二电极203包括相同的金属材料；
上述第一电极引出部401与第二电极引出部402包括相同的金属材料。
这样，在制作工艺过程中，上述第一电极引出部401与第二电极引出部402，可以采用同一制作工艺制作，节省制作成本。
进一步地，本公开实施例提供的上述超声波传感器中，上述第一电极202与第一电极引出部401包括相同的金属材料。也就是说，第一电极202、第二电极203、第一电极引出部401以及第二电极引出部402的金属材料均相同，例如，第一电极202、第二电极203以及第一电极引出部401与第二电极引出部402均可以由导电性良好的银制成，以图7所示的结构为例，如图中箭头所示，第二电极203与第三电极501可以通过金属键合的方式实现耦接，第一导电连接部2021与第二导电连接部502可以通过金属键合的方式进行耦接，可以更好地传递超声波信号。
此外，上述第一电极202与第一电极引出部401包括的金属材料也可以不同，例如，第一电极202和第二电极203可以由银制成，第一电极引出部401与第二电极引出部402可以由钼制成，以图8所示的结构为例，如图中箭头所示，第二电极与第三电极501可以通过金属键合的方式实现耦接，可以较好地传递超声波信号。
请参见图9，基于同一发明构思，本公开实施例还提供了一种显示面板，该显示面板包括显示发光器件600，以及位于显示发光器件背离显示面一侧的上述超声波传感器。该显示发光器件600可以为有机电致发光器件。由于该显示面板解决问题的原理与上述超声波传感器相似，因此该显示面板的实施可以参见上述超声波传感器的实施，重复之处不再赘述。
在实际制作过程中，可以在承载基板的一侧制作超声波接收结构及超声波发射结构，然后将承载基板的另一侧与显示发光器件600贴合。此外，也可以将上述超声波传感器集成到显示发光器件中，此处不对超声波传感器与显示发光器件的结合方式进行限定。
通过将超声波传感器与显示发光器件的结合，可以是显示面板实现超声 波指纹识别和触控检测功能，并且，将超声波传感器的有效发射和接收区域设置为与显示发光器件的显示区域一致，可以实现显示面板的全屏指纹识别功能。
另外，该显示面板还可以包括其他必须的器件，例如，还可以包括：位于显示发光器件600显示面一侧的玻璃盖板700等，这里不再赘述。
应该说明的是，本公开实施中的图3至图9中，为了更清楚的示意超声波接收结构与超声波发射结构的具体结构，将超声波接收结构与超声波发射结构示意为具有一定的间隔，在实际应用中，超声波接收结构与超声波发射结构为如图2所示的直接接触。
基于同一发明构思，本公开实施例还提供了一种显示装置，包括上述显示面板，该显示装置可以应用于手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。由于该显示装置解决问题的原理与上述显示面板相似，因此该显示装置的实施可以参见上述显示面板的实施，重复之处不再赘述。
综上，本公开实施例提供的超声波传感器、显示面板及显示装置，由于超声波发射结构采用第一压电膜层，超声波接收结构采用第二压电膜层，且第一压电膜层的压电常数大于第二压电膜层的压电常数，使超声波传感器具有更好的发射性能，从而可以使得超声波传感器达到更好的发射效果。且，本申请实施例将超声波发射结构的电极引出至承载基板或保护层，使得其他器件可以直接通过承载基板或保护层的电极引出部实现与超声波发射结构的电极连接，减少导线的使用，利于绑定工艺。
显然，本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样，倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (21)

  1. 一种超声波传感器，其中，包括：
    承载基板；
    超声波发射结构，位于所述承载基板之上；所述超声波发射结构，包括：第一压电膜层；
    超声波接收结构，位于所述承载基板之上；所述超声波接收结构，包括：第二压电膜层；
    其中，所述第一压电膜层的压电常数大于所述第二压电膜层的压电常数。
  2. 如权利要求1所述的超声波传感器，其中，所述超声波发射结构与所述超声波接收结构位于所述承载基板的同一侧。
  3. 如权利要求2所述的超声波传感器，其中，所述超声波发射结构位于所述超声波接收结构背离所述承载基板的一侧。
  4. 如权利要求3所述的超声波传感器，其中，还包括：位于所述超声波发射结构与所述超声波接收结构之间的保护层，以及位于所述保护层靠近所述超声波发射结构一侧的第一电极引出部和第二电极引出部；
    所述超声波发射结构，包括：位于所述第一压电膜层背离所述承载基板一侧的第一电极，以及位于所述第一压电膜层靠近所述承载基板一侧的第二电极；
    所述第一电极引出部与所述第二电极耦接，所述第二电极引出部与所述第一电极耦接。
  5. 如权利要求4所述的超声波传感器，其中，所述超声波发射结构，还包括：与所述第一电极耦接的第一导电连接部；
    所述第一导电连接部的一端与所述第一电极耦接，另一端延伸至所述第一压电膜层靠近所述承载基板的一侧，并与所述第二电极引出部直接接触耦接；所述第一导电连接部与所述第二电极绝缘设置；
    所述第二电极与所述第一电极引出部直接接触耦接。
  6. 如权利要求5所述的超声波传感器，其中，所述第一导电连接部包括银胶材料。
  7. 如权利要求4所述的超声波传感器，其中，所述超声波发射结构，还包括：引出导线；
    所述第一电极靠近所述第二导电引出部的一侧的边缘超出所述第一压电膜层的边缘；在所述第一电极超出所述第一压电膜层的边缘设有引出孔；
    所述引出导线的一端与所述第二导电引出部耦接，另一端通过所述引出孔与所述第一电极耦接；
    所述第二电极与所述第一电极引出部直接接触耦接。
  8. 如权利要求4～7任一所述的超声波传感器，其中，所述第一电极与所述第二电极包括相同的金属材料；
    所述第一电极引出部与所述第二电极引出部包括相同的金属材料。
  9. 如权利要求8所述的超声波传感器，其中，所述第一电极与所述第一电极引出部包括相同的金属材料。
  10. 如权利要求3所述的超声波传感器，其中，还包括：位于所述承载基板靠近所述超声波发射结构一侧的第一电极引出部和第二电极引出部；
    所述超声波发射结构，包括：位于所述第一压电膜层背离所述承载基板一侧的第一电极，以及位于所述第一压电膜层靠近所述承载基板一侧的第二电极；
    所述第一电极引出部与所述第二电极耦接，所述第二电极引出部与所述第一电极耦接。
  11. 如权利要求10所述的超声波传感器，其中，还包括：位于所述承载基板靠近所述超声波发射结构一侧的第二导电连接部；
    所述超声波接收结构，包括：位于所述第二压电膜层背离所述承载基板一侧的第三电极，以及位于所述第二压电膜层靠近所述承载基板一侧的多个第四电极；
    所述第三电极与所述第一电极引出部耦接，且所述第三电极与所述第二 电极直接接触耦接；
    所述第二导电连接部的一端与所述第二电极引出部耦接，另一端与所述第一电极耦接；所述第二导电连接部与所述第三电极绝缘设置。
  12. 如权利要求11所述的超声波传感器，其中，所述超声波发射结构，还包括：与所述第一电极耦接的第一导电连接部；
    所述第一导电连接部的一端与所述第一电极耦接，另一端延伸至所述第一压电膜层靠近所述承载基板的一侧，并与所述第二导电连接部直接接触耦接；所述第一导电连接部与所述第二电极绝缘设置。
  13. 如权利要求12所述的超声波传感器，其中，所述第一导电连接部包括银胶材料。
  14. 如权利要求11所述的超声波传感器，其中，所述超声波发射结构，还包括：引出导线；
    所述第一电极靠近所述第二电极引出部的一侧的边缘超出所述第一压电膜层的边缘；在所述第一电极超出所述第一压电膜层的边缘设有引出孔；
    所述引出导线的一端与所述第二电极引出部耦接，另一端通过所述引出孔与所述第一电极耦接。
  15. 如权利要求11所述的超声波传感器，其中，所述第二导电连接部，包括：位于承载基板靠近所述超声波发射结构一侧的材料层，以及位于所述材料层背离所述承载基板一侧的金属层。
  16. 如权利要求15所述的超声波传感器，其中，所述材料层与所述第二压电膜层的材料相同，且所述材料层与所述第二压电膜层同层设置。
  17. 如权利要求10～16任一项所述的超声波传感器，其中，所述第一电极与所述第二电极包括相同的金属材料；
    所述第一电极引出部与所述第二电极引出部包括相同的金属材料。
  18. 如权利要求17所述的超声波传感器，其中，所述第一电极与所述第一电极引出部包括相同的金属材料。
  19. 如权利要求1所述的超声波传感器，其中，所述第一压电膜层的材 料为锆钛酸铅压电陶瓷或压电驻极体材料。
  20. 一种显示面板，其中，包括显示发光器件，以及位于所述显示发光器件背离显示面一侧的如权利要求1～19任一项所述的超声波传感器。
  21. 一种显示装置，其中，包括：如权利要求20所述的显示面板。
PCT/CN2020/087067 2019-05-16 2020-04-26 超声波传感器、显示面板及显示装置 WO2020228523A1 (zh)

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