WO2020207183A1 - 一种FinFET器件的单粒子效应评估方法 - Google Patents

一种FinFET器件的单粒子效应评估方法 Download PDF

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WO2020207183A1
WO2020207183A1 PCT/CN2020/078971 CN2020078971W WO2020207183A1 WO 2020207183 A1 WO2020207183 A1 WO 2020207183A1 CN 2020078971 W CN2020078971 W CN 2020078971W WO 2020207183 A1 WO2020207183 A1 WO 2020207183A1
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finfet device
finfet
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安霞
李艮松
任哲玄
黄如
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Peking University
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  • the invention relates to a single event effect evaluation method of a fin field effect transistor (FinFET), belonging to the field of anti-radiation reinforcement of semiconductor devices.
  • FinFET fin field effect transistor
  • FinFET devices can be divided into bulk silicon (Bulk Si) FinFET and silicon-on-insulator (SOI) FinFET.
  • the electronic system in the spacecraft has an increasing demand for advanced nano-scale devices, so it is very important to evaluate the single event effect of FinFET structure devices.
  • the FinFET structure is not easy to dissipate heat compared to the traditional planar bulk silicon structure, and the power density of the circuit is also increasing with the increase of the integration density.
  • the accumulation of heat causes the temperature of the FinFET device to rise, thereby generating a self-heating effect.
  • the rise in temperature degrades the performance of the device, and on the other hand, it also affects the single event effect of the device working in the spacecraft.
  • the present invention provides a new method for evaluating the single event effect of FinFET devices, which can solve the deviation caused by the previous evaluation methods that do not consider the self-heating effect, and more accurately evaluate the single event effect of FinFET devices.
  • the method proposed by the present invention is as follows:
  • a method for evaluating the single event effect of a FinFET device Its main feature is to increase the temperature of the FinFET device, and the temperature change is equal to the temperature change when the self-heating effect occurs.
  • the specific steps include:
  • the first step is to test and obtain the temperature change ⁇ T SHE of the FinFET device caused by the self-heating effect.
  • the second step is to carry out particle incidence of the FinFET device. Specifically, first increase the temperature of the device to T room + ⁇ T SHE , where T room is room temperature, and continue to maintain this temperature, and then select a particle with a certain linear energy transfer value (Linear Energy Transfer) to enter the device.
  • T room is room temperature
  • Linear Energy Transfer linear Energy Transfer
  • the third step is to extract the required single event effect characterization parameters.
  • the particles pass through the device, they will deposit energy and generate a large number of electron-hole pairs.
  • the charge generated by the particles will be collected and a transient current will be generated at the drain.
  • the parameters that need to be extracted include the amount of charge collected at the drain, the amplitude of the transient current, and the width of the transient current pulse (usually half-width).
  • the FinFET devices include bulk silicon FinFET devices and SOI FinFET devices, and the channel materials of the devices can be Si, Ge, SiGe, III-V semiconductor materials or their heterostructures.
  • the device structure It can be tri-gate, ⁇ -gate, ⁇ -gate, fence-gate, etc.
  • the method of testing the FinFET device ⁇ T SHE is a conventional method. It can be simulated by simulation software to simulate the temperature change of the FinFET device due to the self-heating effect, such as the built-in BSIM of SPICE
  • the self-heating model extracts the temperature change ⁇ T SHE of the FinFET device caused by the self-heating effect under certain specific working conditions, or tests the self-heating temperature increase ⁇ T SHE of the FinFET device through an experimental method.
  • the FinFET device that is incident by the particles needs the same layout and manufacturing process as the device used for measuring the temperature change of the self-heating effect in the first step.
  • the invention has the advantage of considering the influence of the self-heating effect of the FinFET on the single-event effect of the FinFET device, and correcting the deviation caused by the previous evaluation method that does not consider the self-heating effect.
  • Figure 1 is a flow chart of the method of the present invention.
  • the present invention proposes a FinFET single event effect evaluation method, which changes the temperature of the device, and the temperature change is the same as the temperature change caused by the self-heating effect of the device, and then particle incidence and parameter extraction are performed.
  • the method proposed by the present invention will be clearly and completely described below in conjunction with the accompanying drawings.
  • FIG. 1 is a schematic flow chart of the single event effect evaluation method for FinFET devices provided by the present invention.
  • the method of extracting the temperature variation of the self-heating effect of the FinFET device is to simulate with the built-in SPICE model, which specifically includes the following steps:
  • Step 1 Built-in BSIM self-heating model through SPICE simulation Perform simulation and extract the temperature change ⁇ T SHE caused by the self-heating effect of the FinFET device under certain operating conditions, where C th and R th are the device heat capacity and thermal resistance, respectively, and P th is the thermal power when the device is working, t Representative time
  • Step 2 Measure the ambient room temperature T room first , and then increase the temperature of the FinFET device to be evaluated.
  • the temperature change is the same as the ⁇ T SHE obtained in step 1, so that the temperature of the FinFET device is stabilized at T room + ⁇ T SHE ;
  • Step 3 Select a particle with a certain linear energy transmission value LET 1 and enter the device in the off state;
  • Step 4 For single event effect evaluation of FinFET devices, extract the collected charge, transient current amplitude, and transient current pulse width at the drain of the device.
  • the collected charge at the drain can be obtained by the integral current method, and the remaining parameters can be directly measured;
  • Step 5 Change the linear energy transmission values of the particles to LET 2 , LET 3 , LET 4 ..., and repeat steps 3 and 4, and finally obtain the relationship between the single event effect characterization parameter of the FinFET device and the linear energy transmission value of the incident particle .
  • the single event resistance performance of the FinFET device can be evaluated by analyzing the relationship between the single event effect characterizing parameter and the linear energy transmission value.
  • the method of the present invention increases the temperature of the FinFET device before the particles are incident.
  • the temperature change is the same as the temperature change caused by the self-heating effect.
  • the effect of the self-heating effect of the FinFET on the single event effect of the FinFET device is considered, and the previous evaluation method is revised. Without considering the deviation caused by the self-heating effect, it provides a more accurate method for the evaluation of the single event effect of FinFET devices.

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  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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Abstract

一种FinFET器件的单粒子效应评估方法，在FinFET器件被粒子入射前提升器件的温度，温度变化量与自热效应引起的温度变化量相同，然后再进行粒子入射和单粒子效应表征参数的提取。本发明考虑了FinFET的自热效应对FinFET器件单粒子效应的影响，修正了以往评估方法由未考虑自热效应所带来的偏差，为FinFET器件单粒子效应的评估提供了更加准确的手段。

Description

一种FinFET器件的单粒子效应评估方法 技术领域
本发明涉及一种鳍式场效应晶体管(FinFET)单粒子效应评估方法，属于半导体器件抗辐射加固领域。
背景技术
随着航天技术的发展，越来越多的电子元器件使用在航天器上。但是，太空环境中存在着各种高能粒子和射线，这些高能粒子和射线在入射电子元器件后，会产生单粒子效应，如单粒子翻转(Single Event Upset)或单粒子瞬态(Single Event Transient)等，从而造成电子元器件的逻辑状态和存储数据的改变甚至失效，严重影响航天器的安全和寿命。
另一方面，器件的特征尺寸随着集成电路技术的发展不断缩小，已至纳米尺度。传统的平面体硅器件在进入纳米尺度后出现了短沟道效应、迁移率退化等问题，而FinFET器件由于拥有较强的栅控能力以及较高的性能，可以有效抑制短沟道效应等问题，已成为主流商用器件。根据衬底的不同，FinFET器件可以分为体硅(Bulk Si)FinFET和绝缘层上硅(SOI)FinFET。
航天器中的电子系统对于先进纳米级器件的需求越来越大，因此对于FinFET结构器件的单粒子效应评估十分重要。此外，FinFET结构相比于传统平面体硅结构不容易散热，且随着集成密度的增加电路的功率密度也在不断增大，热量的积累造成FinFET器件温度上升，从而产生自热效应。温度的上升一方面使得器件的性能退化，另一方面对于工作在航天器内的器件，也会对其单粒子效应产生影响。以往的FinFET器件单粒子效应评估都是在室温下进行，没有考虑自热效应引起的器件的温度变化，使得单粒子效应评估结果不准确。因此，有必要提出一种新的评估方法来对FinFET器件的抗单粒子效应性能进行评估。
发明内容
本发明提供一种新的FinFET器件单粒子效应的评估方法，可以解决以往评估方法由于未考虑自热效应带来的偏差，更加准确地评估FinFET器件的单粒子效应。本发明提出的方法如下：
一种评估FinFET器件单粒子效应的方法，其主要特征是，提升FinFET器件的温度，温度变化量等于其发生自热效应时的温度变化量。具体步骤包括：
第一步，测试并获取FinFET器件由自热效应带来的温度变化量ΔT SHE。
第二步，进行FinFET器件的粒子入射。具体的，先提高器件的温度至T room+ΔT SHE，其中T room为室温，并持续保持这一温度，然后选择具有某一线性能量传输值(Linear Energy Transfer)的粒子入射器件。
第三步，提取所需的单粒子效应表征参数。粒子穿过器件时，会沉积能量并产生大量电子空穴对，此时处于关态的器件漏端由于存在电场，会收集粒子产生的电荷，同时在漏极产生瞬态电流。对于FinFET器件来说，需要提取的参数包括漏端收集电荷量、瞬态电流幅度以及瞬态电流脉宽(通常为半高宽)。
上述FinFET单粒子效应评估方法中，所述FinFET器件包括体硅FinFET器件和SOI FinFET器件，器件的沟道材料可以为Si、Ge、SiGe、III-V族半导体材料或其异质结构，器件结构可以为三栅、Ω栅、Π栅、围栅等。
上述FinFET单粒子效应评估方法，第一步中，测试FinFET器件ΔT SHE的方法为常规方法，可以是通过仿真软件模拟出FinFET器件因自热效应带来的温度变化量，如通过SPICE仿真内置的BSIM自热模型提取FinFET器件在某种具体工作条件下由自热效应带来的温度变化量ΔT SHE，或通过实验的方法测试出FinFET器件的自热升温量ΔT SHE。
上述FinFET单粒子效应评估方法，第二步中，被粒子入射的FinFET器件与第一步中测量自热效应温度变化量所用的器件需要版图和制备工艺相同。
本发明的优点是考虑了FinFET的自热效应对FinFET器件单粒子效应的影响，修正了以往评估方法由未考虑自热效应所带来的偏差。
附图说明
图1为本发明方法的流程图。
具体实施方式
本发明提出了一种FinFET单粒子效应评估方法，该方法改变器件的温度，温度变化量与器件自热效应引起的温度变化量相同，然后再进行粒子入射和参数提取。下面结合附图对本发明提出的方法进行清楚、完整的描述。
图1所示为本发明提供的FinFET器件单粒子效应评估方法的流程示意图。本例中提取FinFET器件自热效应温度变化量的方法为用SPICE内置模型进行仿真，具体包括以下步骤：
步骤1.通过SPICE仿真内置BSIM自热模型
Figure PCTCN2020078971-appb-000001
进行仿真并提取FinFET器件在某种工作条件下由自热效应带来的温度变化量ΔT SHE，其中C th和R th分别为器件 热容和热阻，P th为器件工作时的热功率，t代表时间；
步骤2.先测得环境室温T room，然后升高待评估FinFET器件的温度，温度变化量与步骤1获取的ΔT SHE相同，使FinFET器件的温度稳定在T room+ΔT SHE；
步骤3.选择具有某一线性能量传输值LET 1的粒子，并入射处于关态的器件；
步骤4.对于FinFET器件单粒子效应评估，提取器件的漏端收集电荷量、瞬态电流幅度以及瞬态电流脉宽，其中漏端收集电荷量可用积分电流法获取，其余参数可用直接测量法；
步骤5.改变粒子的线性能量传输值为LET 2、LET 3、LET 4…，并重复步骤3和步骤4，最终得到FinFET器件的单粒子效应表征参数与入射粒子线性能量传输值之间的关系。这样，可以通过分析单粒子效应表征参数与线性能量传输值之间的关系，来对FinFET器件抗单粒子性能进行评估。
本发明方法在FinFET器件被粒子入射前，提升器件的温度，温度变化量与自热效应引起的温度变化量相同，考虑了FinFET的自热效应对FinFET器件单粒子效应的影响，修正了以往评估方法由未考虑自热效应所带来的偏差，为FinFET器件单粒子效应的评估提供了更加准确的手段。
以上描述的实施例子并非用于限定本发明，任何本领域的技术人员，在不脱离本发明的精神和范围内，可做各种的更动和润饰，本发明的保护范围以权力要求范围所界定。

Claims (8)

  1. 一种FinFET器件单粒子效应的评估方法，包括以下步骤：
    1)测试并获取FinFET器件由自热效应带来的温度变化量ΔT SHE；
    2)提高FinFET器件的温度至T room+ΔT SHE，并持续保持这一温度，进行FinFET器件的粒子入射实验，其中T room为室温；
    3)提取所需的单粒子效应表征参数。
  2. 如权利要求1所述的评估方法，其特征在于，所述步骤1)通过仿真软件模拟出FinFET器件在某种具体工作条件下因自热效应带来的温度变化量ΔT SHE，或者，通过实验的方法测试出FinFET器件因自热效应带来的温度变化量ΔT SHE。
  3. 如权利要求1所述的评估方法，其特征在于，步骤2)选择具有某一线性能量传输值的粒子进行粒子入射实验。
  4. 如权利要求1所述的评估方法，其特征在于，在步骤3)提取的参数包括漏端收集电荷量、瞬态电流幅度以及瞬态电流脉宽。
  5. 如权利要求1所述的评估方法，其特征在于，步骤1)通过SPICE仿真内置的BSIM自热模型提取FinFET器件在某种具体工作条件下由自热效应带来的温度变化量ΔT SHE。
  6. 如权利要求5所述的评估方法，其特征在于，所述评估方法具体是：
    a)通过SPICE仿真内置BSIM自热模型
    Figure PCTCN2020078971-appb-100001
    进行仿真并提取FinFET器件在某种工作条件下由自热效应带来的温度变化量ΔT SHE，其中C th和R th分别为FinFET器件的热容和热阻，P th为FinFET器件工作时的热功率，t代表时间；
    b)先测得环境室温T room，然后升高待评估FinFET器件的温度，温度变化量与步骤a)获取的ΔT SHE相同，使FinFET器件的温度稳定在T room+ΔT SHE；
    c)选择具有某一线性能量传输值LET 1的粒子，并入射处于关态的FinFET器件；
    d)提取FinFET器件的漏端收集电荷量、瞬态电流幅度以及瞬态电流脉宽；
    e)改变粒子的线性能量传输值为LET 2、LET 3、LET 4…，并重复步骤c)和步骤d)，最终得到FinFET器件的单粒子效应表征参数与入射粒子线性能量传输值之间的关系。
  7. 如权利要求1所述的方法，其特征在于，步骤2)中被粒子入射的FinFET器件与步骤1)中测试的FinFET器件的版图和制备工艺完全相同。
  8. 如权利要求1所述的方法，其特征在于，所述FinFET器件是体硅FinFET器件或SOI FinFET器件，器件的沟道材料为Si、Ge、SiGe、III-V族半导体材料或其异质结构，器件结构为 三栅、Ω栅、Π栅或围栅。
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