WO2020206771A1 - Oled 面板 - Google Patents

Oled 面板 Download PDF

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Publication number
WO2020206771A1
WO2020206771A1 PCT/CN2019/085510 CN2019085510W WO2020206771A1 WO 2020206771 A1 WO2020206771 A1 WO 2020206771A1 CN 2019085510 W CN2019085510 W CN 2019085510W WO 2020206771 A1 WO2020206771 A1 WO 2020206771A1
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WIPO (PCT)
Prior art keywords
oled
layer
spacer
oled panel
white light
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Ceased
Application number
PCT/CN2019/085510
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English (en)
French (fr)
Inventor
曾维静
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/614,806 priority Critical patent/US11374197B2/en
Publication of WO2020206771A1 publication Critical patent/WO2020206771A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • This application relates to a display technology, in particular to an OLED panel.
  • Organic light-emitting diodes (Organic Light-Emitting Diode, OLED) have self-luminous, high brightness, wide viewing angle, high contrast, flexibility, low energy consumption and other characteristics, so they have received extensive attention and become a new generation of display methods.
  • OLED large-size TVs are currently the goal pursued by major panel manufacturers.
  • white light devices are generally used.
  • the existing white light device structure includes a substrate 1', a thin film transistor (Thin Film Transistor, TFT) array layer 2', a flat layer 3', an anode 4', a pixel definition layer 5', and a light-emitting function layer 6. ′ And cathode 7′.
  • TFT Thin Film Transistor
  • the carriers Due to the short distance between high-resolution sub-pixels, and the higher mobility of carriers in the Charge Generation Layer (CGL) of OLED devices, the carriers are prone to lateral migration, and The cathode is a full-surface cathode, so the white light device structure is prone to lateral light leakage, which reduces the color gamut and display effect of the panel.
  • CGL Charge Generation Layer
  • the embodiments of the present application provide an OLED panel to solve the technical problem that the white light device structure in the existing OLED panel is likely to cause electrical light leakage.
  • An embodiment of the present application provides an OLED panel, which includes:
  • the TFT array substrate includes a plurality of pixel areas arranged at intervals;
  • a plurality of OLED devices are arranged on the pixel area in a one-to-one correspondence, and the OLED devices include white light devices;
  • the isolator is arranged on the outer circumference of each white light device
  • the OLED panel includes an OLED layer, and the spacer is used to isolate the OLED layer located at the white light device from extending to the adjacent OLED device;
  • the height of the spacer is greater than the thickness of the OLED layer
  • the OLED layer includes a hole injection layer, a hole transport layer, a charge generation layer, a light emitting layer, an electron transport layer, and an electron injection layer arranged in sequence.
  • the OLED devices are arranged in a matrix; the OLED devices are arranged in a first direction to form rows, the OLED devices are arranged in a second direction to form columns, and the row items There is a first pitch between adjacent OLED devices in the column, and a second pitch between adjacent OLED devices in the column item, the first pitch being smaller than the second pitch;
  • the spacer is arranged on both sides of the white light device along the first direction.
  • the OLED panel further includes an auxiliary cathode layer; wherein the auxiliary cathode layer is arranged at both ends of each row of the OLED device, and the extension direction of the auxiliary cathode layer is the same as that of the first Consistent direction.
  • the OLED panel includes a TFT array substrate, an anode, a pixel definition layer with openings, the separator, the OLED layer, the cathode, and the auxiliary cathode layer arranged in sequence from bottom to top ;
  • the spacer is arranged on the pixel definition layer between two adjacent openings.
  • the OLED layer and the cathode between the white light device and the adjacent OLED device are disconnected and arranged by the separator.
  • the cathode of the OLED device and the auxiliary cathode layer are electrically connected.
  • the length of the spacer is greater than or equal to the length of the white light device.
  • the spacer is a long strip, and the longitudinal cross-sectional shape of the spacer is a shape with a wide top and a narrow bottom.
  • An embodiment of the present application also provides an OLED panel, which includes:
  • the TFT array substrate includes a plurality of pixel areas arranged at intervals;
  • a plurality of OLED devices are arranged on the pixel area in a one-to-one correspondence, and the OLED devices include white light devices;
  • the isolator is arranged on the outer circumference of each white light device
  • the OLED panel includes an OLED layer, and the spacer is used to isolate the OLED layer located at the white light device from extending to the adjacent OLED device, and the height of the spacer is greater than the thickness of the OLED layer.
  • the OLED layer includes a hole injection layer, a hole transport layer, a charge generation layer, a light emitting layer, an electron transport layer, and an electron injection layer that are sequentially arranged.
  • the OLED devices are arranged in a matrix; the OLED devices are arranged in a first direction to form rows, the OLED devices are arranged in a second direction to form columns, and the row items There is a first pitch between adjacent OLED devices in the column, and a second pitch between adjacent OLED devices in the column item, the first pitch being smaller than the second pitch;
  • the spacer is arranged on both sides of the white light device along the first direction.
  • the OLED panel further includes an auxiliary cathode layer; wherein the auxiliary cathode layer is arranged at both ends of each row of the OLED device, and the extension direction of the auxiliary cathode layer is the same as that of the first Consistent direction.
  • the OLED panel includes a TFT array substrate, an anode, a pixel definition layer with openings, the separator, the OLED layer, the cathode, and the auxiliary cathode layer arranged in sequence from bottom to top ;
  • the spacer is arranged on the pixel definition layer between two adjacent openings.
  • the OLED layer and the cathode between the white light device and the adjacent OLED device are disconnected and arranged by the separator.
  • the cathode of the OLED device and the auxiliary cathode layer are electrically connected.
  • the length of the spacer is greater than or equal to the length of the white light device.
  • the spacer is a long strip, and the longitudinal cross-sectional shape of the spacer is a shape with a wide top and a narrow bottom.
  • the longitudinal cross-sectional shape of the spacer is an inverted trapezoid or "T" shape.
  • the auxiliary cathode layer is selected from one of Al, Cu, and Ag, and a group formed by a combination thereof.
  • the OLED panel of the present application is provided with a spacer on the outer periphery of the white light device, which separates the OLED layer of the white light device and extends to the adjacent OLED device, thereby preventing light leakage of the white light device. effect.
  • This application solves the technical problem that the white light device structure in the existing OLED panel is prone to electrical light leakage.
  • FIG. 1 is a schematic diagram of the structure of an OLED panel in the prior art
  • FIG. 2 is a schematic diagram of a top view structure of an OLED panel according to an embodiment of the application
  • FIG. 3 is a schematic cross-sectional structure view along line AA in FIG. 2;
  • Fig. 4 is a schematic cross-sectional structure view along line BB in Fig. 2.
  • FIG. 2 is a schematic top view of the OLED panel according to an embodiment of the application
  • FIG. 3 is a schematic cross-sectional structure view along line AA in FIG. 2.
  • the OLED panel 100 of the embodiment of the present application includes a TFT array substrate 10, an OLED device 20, and an isolator 30.
  • the TFT array substrate 10 includes a plurality of pixel regions arranged at intervals.
  • a plurality of OLED devices 20 are arranged on the pixel area in a one-to-one correspondence.
  • the OLED device 20 includes a white light device 21.
  • the spacer 30 is provided on the outer periphery of each white light device 21.
  • the OLED panel 100 includes an OLED layer 211.
  • the spacer 30 is used to isolate the OLED layer located at the white light device 21 from extending to the adjacent OLED device 20.
  • the OLED layer 211 at the white light device 21 is separated from extending to the adjacent OLED device 20, thereby preventing light leakage of the white light device.
  • the spacer 30 is formed on the pixel definition layer 214 first, and then the OLED layer 211 is formed. Due to the arrangement of the separator 30, the OLED layer 211 is disconnected at the separator 30, so that the OLED layers 211 on both sides of the separator 30 are cut off. Furthermore, when the OLED panel 100 emits light, the spacer 30 isolates the possibility of the carriers in the OLED layer 211 at the white light device 21 from migrating to the adjacent OLED device 20, thereby avoiding light leakage of the white light device 21.
  • the OLED devices 20 are all white light devices 21, but are not limited thereto.
  • the OLED device 20 may also include a white light device 21 and other devices, such as a red light device, a green light device, and a blue light device.
  • an isolator 30 is provided between two adjacent white light devices 21.
  • the height of the spacer 30 is greater than the thickness of the OLED layer 211. Such an arrangement improves the stability of the spacer 30 during the OLED panel 100 manufacturing process to disconnect the OLED layer 211.
  • the isolator 30 is a long strip
  • the longitudinal cross-sectional shape of the isolator 30 is a shape with a wide top and a narrow bottom.
  • the longitudinal cross-sectional shape of the separator 30 is an inverted trapezoid or "T" shape.
  • the length of the spacer 30 is greater than or equal to the length of the white light device 21, that is, the length of the spacer 30 is greater than or equal to the length of the pixel area. Such an arrangement improves the stability of the separator 30 to disconnect the OLED layer 211.
  • the OLED layer 211 includes a hole injection layer, a hole transport layer, a charge generation layer, a light emitting layer, an electron transport layer, and an electron injection layer, which are sequentially arranged.
  • the charge generation layer generates carriers.
  • the light-emitting layer is made of organic light-emitting material.
  • the materials of the light-emitting layer in different OLED devices 20 are different.
  • the material of the light emitting layer of the white light device 21 is an organic white light emitting material
  • the material of the light emitting layer of the red light device 21 is an organic red light emitting material.
  • the OLED devices 20 are arranged in a matrix.
  • the OLED devices 20 are arranged along the first direction X to form rows.
  • the OLED devices 20 are arranged along the second direction Y to form columns. There is a first distance between adjacent OLED devices 20 in the row item. There is a second distance between adjacent OLED devices 20 in the column. The first distance is smaller than the second distance.
  • the spacer 30 is arranged on both sides of the white light device 21 along the first direction X.
  • the spacer 30 between the OLED devices 20 with a smaller pitch is more effective in avoiding light leakage. Therefore, the spacer 30 is arranged on both sides of the white light device 21 along the first direction X.
  • FIG. 4 is a schematic cross-sectional structure view along line BB in FIG. 2.
  • the OLED panel 100 further includes an auxiliary cathode layer 212.
  • the auxiliary cathode layer 212 is arranged at both ends of each row of OLED devices 20.
  • the extension direction of the auxiliary cathode layer 212 is consistent with the first direction X.
  • the cathode 215 and the auxiliary cathode layer 212 at the OLED device 20 are electrically connected.
  • the arrangement of the auxiliary cathode layer 212 reduces the voltage drop of the OLED panel 100.
  • the auxiliary cathode layer 212 includes a plurality of strip-shaped conductive strips, and a row of OLED devices 20 are arranged between the two conductive strips. The extending direction of the conductive strip is perpendicular to the extending direction of the spacer 30.
  • the auxiliary cathode layer 212 is a material with better conductivity or a higher thickness.
  • the auxiliary cathode layer 212 is selected from a group formed by one of Al, Cu, and Ag, and a combination thereof.
  • the OLED panel 100 includes a TFT array substrate 10, an anode 213, a pixel defining layer 214 with openings, a separator 30, an OLED layer 211, and a cathode 215 arranged in sequence from bottom to top. And auxiliary cathode layer 212.
  • the spacer 30 is disposed on the pixel definition layer 214 between two adjacent openings.
  • the TFT array substrate includes a substrate 111, a thin film transistor 112 disposed on the substrate 111, and a flat layer 113 disposed on the thin film transistor 112.
  • the anode 213 is provided on the flat layer 113.
  • the anode 213 is electrically connected to the thin film transistor 112.
  • the anode 213, the pixel definition layer 214, the OLED layer 211, and the cathode 215 form a plurality of OLED devices 20.
  • the OLED layer 211 and the cathode 215 between the white light device 21 and the adjacent OLED device 20 are disconnected and arranged by the separator 30.
  • the manufacturing process of the OLED panel 100 of this embodiment (taking the OLED device as a white light device as an example) is as follows:
  • Step 1 Provide a substrate 111, and form a barrier layer, a gate metal layer, a first insulating layer, an active layer, a second insulating layer, a source/drain metal layer, an interlayer dielectric layer, and a flat layer on the substrate 111 113, anode 213, and pixel definition layer 214.
  • the base 111, the barrier layer, the gate metal layer, the first insulating layer, the active layer, the second insulating layer, the source/drain metal layer, the interlayer dielectric layer, and the flat layer 113 form the TFT array substrate 10.
  • Step 2 On the pixel definition layer 214 in the first direction X, a stripe-shaped inverted trapezoidal spacer 30 is formed.
  • step three an entire OLED layer 211 and a cathode 215 are formed on the pixel definition layer 24. Due to the existence of the separator 30, the OLED layer 211 and the cathode 215 on both sides of the separator 30 are disconnected.
  • Step 4 In a direction perpendicular to the separator 30 (first direction X), an auxiliary cathode layer 212 is formed.
  • the OLED panel of the present application is provided with a spacer on the outer periphery of the white light device, which separates the OLED layer of the white light device and extends to the adjacent OLED device, thereby preventing light leakage of the white light device. effect.
  • This application solves the technical problem that the white light device structure in the existing OLED panel is prone to electrical light leakage.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED面板（100），其包括TFT阵列基板（10）、OLED器件（20）和隔离体（30）；TFT阵列基板（10）包括像素区；多个OLED器件（20）一一对应设置在像素区上，OLED器件（20）包括白光器件（21）；隔离体（30）设置在每一白光器件（21）的外周；OLED面板（100）包括OLED层（211），隔离体（30）用于隔断位于所述白光器件（21）处的OLED层（211）向相邻OLED器件（20）延伸。通过在白光器件（21）的外周设置隔离体（30），起到避免白光器件（21）漏光的作用。

Description

OLED面板 技术领域
本申请涉及一种显示技术，特别涉及一种OLED面板。
 背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)，具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式。OLED大尺寸电视是目前各大面板产业者追求的目标。为了实现大尺寸高分辨率的产品，一般采用白光器件。
现有的白光器件结构（请参阅图1）包括基板1′、薄膜晶体管（Thin Film Transistor，TFT）阵列层2′、平坦层3′、阳极4′、像素定义层5′、发光功能层6′和阴极7′。
由于高分辨率子像素（sub-pixel）间距离较短，而OLED器件中的电荷产生层（Charge Generation Layer，CGL）的载流子的迁移率较高，载流子容易发生横向迁移，且阴极为整面阴极，因此白光器件结构容易产生横向漏光现象，降低面板的色域及显示效果。
 技术问题
本申请实施例提供一种OLED面板，以解决现有的OLED面板中白光器件结构容易引起电学漏光的技术问题。
 技术解决方案
本申请实施例提供一种OLED面板，其包括：
TFT阵列基板，包括多个间隔设置的像素区；
多个OLED器件，一一对应设置在所述像素区上，所述OLED器件包括白光器件；以及
隔离体，设置在每一所述白光器件的外周；
其中所述OLED面板包括OLED层，所述隔离体用于隔断位于所述白光器件处的OLED层向相邻所述OLED器件延伸；
所述隔离体的高度大于所述OLED层的厚度；
所述OLED层包括依次设置的空穴注入层、空穴传输层、电荷产生层、发光层、电子传输层和电子注入层。
在本申请的OLED面板中，所述OLED器件呈矩阵式排布；所述OLED器件沿着第一方向排布形成行，所述OLED器件沿着第二方向排布形成列，所述行项中相邻的OLED器件之间具有第一间距，所述列项中相邻的OLED器件之间具有第二间距，所述第一间距小于所述第二间距；
其中，所述隔离体沿着所述第一方向设置在所述白光器件的两侧。
在本申请的OLED面板中，所述OLED面板还包括一辅助阴极层；其中所述辅助阴极层设置在每行所述OLED器件的两端，所述辅助阴极层的延伸方向与所述第一方向的一致。
在本申请的OLED面板中，所述OLED面板包括自下而上依次设置的TFT阵列基板、阳极、具有开口的像素定义层、所述隔离体、所述OLED层、阴极和所述辅助阴极层；
所述隔离体设置在相邻的两个所述开口之间的所述像素定义层上。
在本申请的OLED面板中，在所述第一方向上，所述白光器件与相邻的OLED器件之间的所述OLED层和所述阴极通过所述隔离体断开设置。
在本申请的OLED面板中，所述OLED器件的所述阴极和所述辅助阴极层电性连接。
在本申请的OLED面板中，所述隔离体的长度大于等于所述白光器件的长度。
在本申请的OLED面板中，所述隔离体为长条状，且所述隔离体的纵向截面形状为上宽下窄的形状。
本申请实施例还提供一种OLED面板，其包括：
TFT阵列基板，包括多个间隔设置的像素区；
多个OLED器件，一一对应设置在所述像素区上，所述OLED器件包括白光器件；以及
隔离体，设置在每一所述白光器件的外周；
其中所述OLED面板包括OLED层，所述隔离体用于隔断位于所述白光器件处的OLED层向相邻所述OLED器件延伸，所述隔离体的高度大于所述OLED层的厚度。
在本申请的OLED面板中，所述OLED层包括依次设置的空穴注入层、空穴传输层、电荷产生层、发光层、电子传输层和电子注入层。
在本申请的OLED面板中，所述OLED器件呈矩阵式排布；所述OLED器件沿着第一方向排布形成行，所述OLED器件沿着第二方向排布形成列，所述行项中相邻的OLED器件之间具有第一间距，所述列项中相邻的OLED器件之间具有第二间距，所述第一间距小于所述第二间距；
其中，所述隔离体沿着所述第一方向设置在所述白光器件的两侧。
在本申请的OLED面板中，所述OLED面板还包括一辅助阴极层；其中所述辅助阴极层设置在每行所述OLED器件的两端，所述辅助阴极层的延伸方向与所述第一方向的一致。
在本申请的OLED面板中，所述OLED面板包括自下而上依次设置的TFT阵列基板、阳极、具有开口的像素定义层、所述隔离体、所述OLED层、阴极和所述辅助阴极层；
所述隔离体设置在相邻的两个所述开口之间的所述像素定义层上。
在本申请的OLED面板中，在所述第一方向上，所述白光器件与相邻的OLED器件之间的所述OLED层和所述阴极通过所述隔离体断开设置。
在本申请的OLED面板中，所述OLED器件的所述阴极和所述辅助阴极层电性连接。
在本申请的OLED面板中，所述隔离体的长度大于等于所述白光器件的长度。
在本申请的OLED面板中，所述隔离体为长条状，且所述隔离体的纵向截面形状为上宽下窄的形状。
在本申请的OLED面板中，所述隔离体的纵向截面形状为倒梯形或“T”形。
在本申请的OLED面板中，所述辅助阴极层选自Al、Cu和Ag中的一种及其组合形成的组群。
 有益效果
相较于现有技术的OLED面板，本申请的OLED面板通过在白光器件的外周设置隔离体，隔断了所述白光器件的OLED层向相邻所述OLED器件延伸，起到避免白光器件漏光的作用。本申请解决了现有的OLED面板中白光器件结构容易产生电学漏光的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为现有技术的OLED面板的结构示意图；
图2为本申请的实施例的OLED面板的俯视结构示意图；
图3为图2中沿AA线的截面结构示意图；
图4为图2中沿BB线的截面结构示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图2和图3，图2为本申请的实施例的OLED面板的俯视结构示意图；图3为图2中沿AA线的截面结构示意图。
本申请实施例的OLED面板100包括TFT阵列基板10、OLED器件20和隔离体30。
TFT阵列基板10包括多个间隔设置的像素区。多个OLED器件20一一对应设置在像素区上。OLED器件20包括白光器件21。隔离体30设置在每一白光器件21的外周。
其中OLED面板100包括OLED层211。隔离体30用于隔断位于白光器件21处的OLED层向相邻OLED器件20延伸。
本实施例的OLED面板100通过在白光器件21的外周设置隔离体30，隔断了白光器件21处的OLED层211向相邻OLED器件20延伸，起到避免白光器件漏光的作用。
在OLED面板的制程中，先在像素定义层214上形成隔离体30，后形成OLED层211。由于隔离体30的设置，使得OLED层211在隔离体30处发生断开，使得隔离体30两侧的OLED层211被隔断。进而在OLED面板100发光时，隔离体30隔断了白光器件21处的OLED层211中的载流子向相邻的OLED器件20迁移的可能，进而避免了白光器件21发生漏光。
在本实施例中，OLED器件20均为白光器件21，但并不限于此。也就是说，OLED器件20也可以是包括白光器件21和其他器件，比如红光器件、绿光器件和蓝光器件等。当OLED器件20均为白光器件21时，相邻两个白光器件21之间设置一个隔离体30。
其中，隔离体30的高度大于OLED层211的厚度。这样的设置，提高了隔离体30在OLED面板100制程中，断开OLED层211的稳定性。
具体的，隔离体30为长条状，且隔离体30的纵向截面形状为上宽下窄的形状。比如，隔离体30的纵向截面形状为倒梯形或“T”形。
隔离体30的长度大于等于白光器件21的长度，即隔离体30的长度大于等于像素区的长度。这样的设置，提高了隔离体30断开OLED层211的稳定性。
在本实施例的OLED面板100中，OLED层211包括依次设置的空穴注入层、空穴传输层、电荷产生层、发光层、电子传输层和电子注入层。其中OLED面板100在发光时，电荷产生层产生载流子。发光层为有机发光材料制成。不同OLED器件20中的发光层的材料不同。比如白光器件21的发光层的材料为有机发白光材料，红光器件的发光层的材料为有机发红光材料。
在本实施例的OLED面板100中，OLED器件20呈矩阵式排布。OLED器件20沿着第一方向X排布形成行。OLED器件20沿着第二方向Y排布形成列。行项中相邻的OLED器件20之间具有第一间距。列项中相邻的OLED器件20之间具有第二间距。第一间距小于所述第二间距。
其中，隔离体30沿着第一方向X设置在白光器件21的两侧。
当OLED面板100发光时，由于白光器件21中的电荷产生层的载流子的迁移率较高，载流子容易迁移。因此OLED器件20之间的间距越小越容易发生漏光。因此将隔离体30设置在间距较小的OLED器件20之间，更有效于避免漏光。故，隔离体30沿着第一方向X设置在白光器件21的两侧。
请参照图2和4，图4为图2中沿BB线的截面结构示意图。在本实施例的OLED面板100中，OLED面板100还包括一辅助阴极层212。其中辅助阴极层212设置在每行OLED器件20的两端。辅助阴极层212的延伸方向与第一方向X的一致。
OLED器件20处的阴极215和辅助阴极层212电性连接。辅助阴极层212的设置，减少了OLED面板100的压降。辅助阴极层212包括多个条状导电条，两个导电条之间间隔一行OLED器件20设置。导电条的延伸方向垂直于隔离体30的延伸方向。
在本实施例的OLED面板100中，辅助阴极层212为导电性较好或厚度较高的材料。比如，辅助阴极层212选自Al、Cu和Ag中的一种及其组合形成的组群。
具体的，在本实施例的OLED面板100中，OLED面板100包括自下而上依次设置的TFT阵列基板10、阳极213、具有开口的像素定义层214、隔离体30、OLED层211、阴极215和辅助阴极层212。隔离体30设置在相邻的两个开口之间的像素定义层214上。
在OLED面板100的层级结构中，TFT阵列基板包括一基底111、设置在基底111上的薄膜晶体管112以及设置在薄膜晶体管112上的平坦层113。阳极213设置在平坦层113上。阳极213电性连接于薄膜晶体管112。阳极213、像素定义层214、OLED层211和阴极215形成多个OLED器件20。
在本实施例的OLED面板100中，在第一方向X上，白光器件21与相邻的OLED器件20之间的OLED层211和阴极215通过隔离体30断开设置。
本实施例的OLED面板100（以OLED器件为白光器件为例）的制备过程是：
步骤一，提供一基底111，并在该基底111上形成阻挡层、栅极金属层、第一绝缘层、有源层、第二绝缘层、源漏金属层、层间介电层、平坦层113、阳极213和像素定义层214。其中，基底111、阻挡层、栅极金属层、第一绝缘层、有源层、第二绝缘层、源漏金属层、层间介电层和平坦层113形成TFT阵列基板10。
步骤二，在第一方向X上的像素定义层214上，形成条状倒梯形的隔离体30。
步骤三，在像素定义层24上形成整面的OLED层211和阴极215。由于隔离体30的存在，使得隔离体30两侧的OLED层211和阴极215均出现断开的现象。
步骤四，在垂直于隔离体30的方向（第一方向X）上，形成辅助阴极层212。
最后，完成面板的封装。
这样便完成了本实施例的制备过程。
相较于现有技术的OLED面板，本申请的OLED面板通过在白光器件的外周设置隔离体，隔断了所述白光器件的OLED层向相邻所述OLED器件延伸，起到避免白光器件漏光的作用。本申请解决了现有的OLED面板中白光器件结构容易产生电学漏光的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本申请的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本申请后附的权利要求的保护范围。

Claims (20)

  1. 一种OLED面板，其包括：
    TFT阵列基板，包括多个间隔设置的像素区；
    多个OLED器件，一一对应设置在所述像素区上，所述OLED器件包括白光器件；以及
    隔离体，设置在每一所述白光器件的外周；
    其中所述OLED面板包括OLED层，所述隔离体用于隔断位于所述白光器件处的OLED层向相邻所述OLED器件延伸；
    所述隔离体的高度大于所述OLED层的厚度；
    所述OLED层包括依次设置的空穴注入层、空穴传输层、电荷产生层、发光层、电子传输层和电子注入层。
  2. 根据权利要求1所述的OLED面板，其中，所述OLED器件呈矩阵式排布；所述OLED器件沿着第一方向排布形成行，所述OLED器件沿着第二方向排布形成列，所述行项中相邻的OLED器件之间具有第一间距，所述列项中相邻的OLED器件之间具有第二间距，所述第一间距小于所述第二间距；
    其中，所述隔离体沿着所述第一方向设置在所述白光器件的两侧。
  3. 根据权利要求2所述的OLED面板，其中，所述OLED面板还包括一辅助阴极层；其中所述辅助阴极层设置在每行所述OLED器件的两端，所述辅助阴极层的延伸方向与所述第一方向的一致。
  4. 根据权利要求3所述的OLED面板，其中，所述OLED面板包括自下而上依次设置的TFT阵列基板、阳极、具有开口的像素定义层、所述隔离体、所述OLED层、阴极和所述辅助阴极层；
    所述隔离体设置在相邻的两个所述开口之间的所述像素定义层上。
  5. 根据权利要求4所述的OLED面板，其中，在所述第一方向上，所述白光器件与相邻的OLED器件之间的所述OLED层和所述阴极通过所述隔离体断开设置。
  6. 根据权利要求4所述的OLED面板，其中，所述OLED器件的所述阴极和所述辅助阴极层电性连接。
  7. 根据权利要求5所述的OLED面板，其中，所述隔离体的长度大于等于所述白光器件的长度。
  8. 根据权利要求1所述的OLED面板，其中，所述隔离体为长条状，且所述隔离体的纵向截面形状为上宽下窄的形状。
  9. 一种OLED面板，其包括：
    TFT阵列基板，包括多个间隔设置的像素区；
    多个OLED器件，一一对应设置在所述像素区上，所述OLED器件包括白光器件；以及
    隔离体，设置在每一所述白光器件的外周；
    其中所述OLED面板包括OLED层，所述隔离体用于隔断位于所述白光器件处的OLED层向相邻所述OLED器件延伸。
  10. 根据权利要求9所述的OLED面板，其中，所述隔离体的高度大于所述OLED层的厚度。
  11. 根据权利要求9所述的OLED面板，其中，所述OLED层包括依次设置的空穴注入层、空穴传输层、电荷产生层、发光层、电子传输层和电子注入层。
  12. 根据权利要求9所述的OLED面板，其中，所述OLED器件呈矩阵式排布；所述OLED器件沿着第一方向排布形成行，所述OLED器件沿着第二方向排布形成列，所述行项中相邻的OLED器件之间具有第一间距，所述列项中相邻的OLED器件之间具有第二间距，所述第一间距小于所述第二间距；
    其中，所述隔离体沿着所述第一方向设置在所述白光器件的两侧。
  13. 根据权利要求12所述的OLED面板，其中，所述OLED面板还包括一辅助阴极层；其中所述辅助阴极层设置在每行所述OLED器件的两端，所述辅助阴极层的延伸方向与所述第一方向的一致。
  14. 根据权利要求13所述的OLED面板，其中，所述OLED面板包括自下而上依次设置的TFT阵列基板、阳极、具有开口的像素定义层、所述隔离体、所述OLED层、阴极和所述辅助阴极层；
    所述隔离体设置在相邻的两个所述开口之间的所述像素定义层上。
  15. 根据权利要求14所述的OLED面板，其中，在所述第一方向上，所述白光器件与相邻的OLED器件之间的所述OLED层和所述阴极通过所述隔离体断开设置。
  16. 根据权利要求14所述的OLED面板，其中，所述OLED器件的所述阴极和所述辅助阴极层电性连接。
  17. 根据权利要求15所述的OLED面板，其中，所述隔离体的长度大于等于所述白光器件的长度。
  18. 根据权利要求9所述的OLED面板，其中，所述隔离体为长条状，且所述隔离体的纵向截面形状为上宽下窄的形状。
  19. 根据权利要求18所述的OLED面板，其中，所述隔离体的纵向截面形状为倒梯形或“T”形。
  20. 根据权利要求14所述的OLED面板，其中，所述辅助阴极层选自Al、Cu和Ag中的一种及其组合形成的组群。
PCT/CN2019/085510 2019-04-08 2019-05-05 Oled 面板 Ceased WO2020206771A1 (zh)

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