WO2020192016A1 - Quantum dot composite film preparation method and backlight module - Google Patents

Quantum dot composite film preparation method and backlight module Download PDF

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Publication number
WO2020192016A1
WO2020192016A1 PCT/CN2019/103984 CN2019103984W WO2020192016A1 WO 2020192016 A1 WO2020192016 A1 WO 2020192016A1 CN 2019103984 W CN2019103984 W CN 2019103984W WO 2020192016 A1 WO2020192016 A1 WO 2020192016A1
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solution
quantum dot
composite film
dot composite
preparing
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PCT/CN2019/103984
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French (fr)
Chinese (zh)
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曾燚
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深圳市华星光电技术有限公司
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Publication of WO2020192016A1 publication Critical patent/WO2020192016A1/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

Definitions

  • the invention relates to the fields of displays and the like, in particular to a method for preparing a quantum dot composite film and a backlight module.
  • the mainstream thin film transistor display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) is a backlit liquid crystal display, that is, the liquid crystal panel itself does not emit light, and a backlight module must be used to provide a light source to display images. Therefore, the colors that the display can display are closely related to the backlight module.
  • the mainstream color gamut level of liquid crystal displays is about 72%.
  • applying quantum dot film in the backlight module is a better solution.
  • the quantum dot material When the quantum dot material is excited by light, it can emit light of a specific wavelength, and the emitted light has the characteristics of narrow half-wave width and high color purity.
  • adding a quantum dot film layer to the backlight module, and stimulating specific quantum dot materials through the LED light source can significantly improve the light-emitting effect of the backlight module.
  • the light conversion efficiency of the quantum dot film directly applied in this way is low, which will cause the brightness of the backlight module to be low, thereby affecting the display effect.
  • the present invention provides a method for preparing a quantum dot composite film and a backlight module, by forming a quantum dot composite film combining a metal nanostructure with quantum dots, and applying the principle of enhancing near-field optics with a metal plasma structure. Improve the luminous efficiency of the quantum dot film layer, thereby improving the luminous effect of the backlight module.
  • the present invention provides a method for preparing a quantum dot composite film, which includes the following steps: preparing a metal nanoparticle dispersion; preparing a metal plasma structure film: uniformly coating the metal nanoparticle dispersion on a substrate After drying, the metal plasma structure film is obtained; the production of a quantum dot composite film: the polymer colloid dispersed with quantum dots is coated on the metal plasma structure film, and the polymer colloid of the quantum dots forms a quantum dot The dot structure layer is dried and solidified to obtain a quantum dot composite film.
  • the step of preparing the metal nanoparticle dispersion liquid includes: preparing the first reaction liquid, including the following steps: preparing the first mixed liquid: adding the first chloroauric acid solution to the first cetyltrimethylammonium bromide In the solution, stir it to fully mix to obtain the first mixed liquid; generate the first reaction liquid: add the first sodium borohydride solution at a temperature of 0°C to the first mixed liquid under one atmosphere, and stir to make it Mix thoroughly, and then react in a water bath under the first constant temperature to obtain the first reaction solution; prepare the second reaction solution, including the following steps; prepare the second mixed solution: combine the second portion of chloroauric acid solution and the first portion of nitric acid The silver solution, the first vitamin C solution and the first reaction solution were added to the second cetyltrimethyl amine bromide solution, stirred to make them fully mixed, and then reacted in a water bath under the second constant temperature condition , Obtain the second mixed liquid; purify the second mixed liquid: centrifuge the second mixed liquid and remove the
  • the mass concentration of chloroauric acid in the chloroauric acid solution, is 0.2%-0.4%; in the cetyltrimethylammonium bromide solution, the cetyl The mass concentration of trimethylamine bromide is 2%-4%; in the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02%-0.04%; in the silver nitrate solution, the mass of silver nitrate The concentration is 0.2%-0.4%; in the vitamin C solution, the mass concentration of vitamin C is 1%-3%; in the cetylpyridinium chloride solution, the mass of cetylpyridinium chloride The concentration is 3%-4%.
  • the following steps are further included: purifying the second reaction solution: centrifuging the second reaction solution and removing Add the second reaction solution after centrifugation to the fourth part of cetyltrimethyl amine bromide solution, and add the fifth part of chloroauric acid solution. After stirring for 30 minutes, at room temperature Let stand for 12 hours.
  • the step of purifying the second mixed liquid is performed 1-3 times; the purifying the second reaction liquid is performed 1-3 times.
  • the structure of the quantum dot is a core-shell structure
  • the material used for the quantum dot of the core-shell structure is a multi-element compound semiconductor material or a doped semiconductor material.
  • the multi-element compound semiconductor material includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb , GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe binary compound semiconductor materials one or more; or Cd x Zn 1-x Se, Cd x Zn 1 -x S, CuInS 2 , CuInSe 2 , AgInS 2 , AgInSe 2 , In x Ga 1-x P, Cd x Zn 1-x S y Se 1-y one or more of ternary or more compound semiconductor materials
  • the doped semiconductor material includes one or more of MnSe: Cu, MnSe:
  • the present invention also provides a backlight module, including a quantum dot composite film, including a metal plasma structure film; a quantum dot structure layer, arranged on the metal plasma structure film; the quantum dot composite film is the A quantum dot composite film prepared by a method for preparing a quantum dot composite film.
  • the backlight module further includes a light-reflecting layer; a light-guide plate, the light-reflecting layer is provided on one side of the light-guide plate, and there is an accommodation between the light-reflective layer and the light-guide plate The cavity; the metal plasma structure film is covered on the side of the light reflecting layer facing the light guide plate; and the light source is arranged in the containing cavity.
  • the light source is a blue LED lamp bead.
  • the preparation method of the quantum dot composite film of the present invention is to form a quantum dot composite film in which a metal nano structure and a quantum dot are combined, and apply the principle of enhancing near-field optics with a metal plasma structure to improve the luminous efficiency of the quantum dot film.
  • the backlight module of the present invention improves the light-emitting effect of the backlight module by arranging the quantum dot composite film on the reflective layer, and the quantum dot composite film is arranged on the reflective layer, which can help to obtain higher light conversion efficiency and can Reduce the amount of quantum dots used and save materials.
  • FIG. 1 is a structural diagram of a quantum dot composite film formed on a substrate by a method for preparing a quantum dot composite film according to an embodiment of the present invention.
  • FIG. 2 is a structural diagram of a backlight module according to an embodiment of the present invention, which mainly reflects a specific installation structure of the quantum dot composite film in the backlight module.
  • the quantum dot composite film 1 to be prepared in this embodiment includes a metal plasma structure film 11, a quantum dot structure layer 12, and the quantum dot structure layer 12 is disposed on the metal plasma structure film 11. .
  • the preparation method of the quantum dot composite film 1 of the present invention includes the following steps:
  • the preparation of the first reaction solution includes the following steps: preparation of the first mixed solution: adding the first chloroauric acid solution to the first cetyltrimethylammonium bromide solution, stirring for 30 minutes, and mixing it thoroughly to obtain The first mixed solution. Generate the first reaction liquid: Add the first sodium borohydride solution with a temperature of 0°C to the first mixed liquid under one atmosphere, and stir to make it fully mixed. In this embodiment, the first boron The sodium hydride solution was cooled to 0°C with ice water. Then, under the first constant temperature condition, in this embodiment, under the constant temperature condition of 30° C., the water bath reaction is performed to obtain the first reaction liquid.
  • the mass ratio of the first chloroauric acid solution, the first cetyltrimethyl amine bromide solution, and the first sodium borohydride solution is 4-6:200:10-20.
  • the preparation of the second reaction liquid includes the following steps; preparation of the second mixed liquid: adding the second part of chloroauric acid solution, the first part of silver nitrate solution, the first part of vitamin C solution and the first part of the reaction liquid to the second part of ten In the hexaalkyltrimethylamine bromide solution, stir to make it fully mixed, and then under the second constant temperature condition, in this embodiment, under the constant temperature condition of 30°C, the water bath reacts to obtain the second mixed solution; wherein , The mass ratio of the second chloroauric acid solution, the first silver nitrate solution, the first vitamin C solution, and the first reaction solution is 20-40:2-4:4-6:500-800.
  • Purify the second mixture centrifuge the second mixture and remove the supernatant after centrifugation; add the second mixture after the centrifugation to the third part of cetyltrimethylammonium bromide To the solution, add the third part of chloroauric acid solution and the second part of vitamin C solution at the same time; generate a second reaction solution: under the third constant temperature condition, in this embodiment, the temperature is 40°C constant temperature condition, the water bath reaction is obtained, The second reaction solution should be kept for a preset time.
  • the mass ratio of the second mixed liquid, the third cetyltrimethyl amine bromide solution, the third chloroauric acid solution and the second vitamin C solution is: 500-800: 500-800 : 20-40: 5-10.
  • Purify the second reaction liquid centrifuge the second reaction liquid and remove the supernatant after centrifugation; add the fourth part of the hexadecyltrimethyl bromide to the second reaction liquid after centrifugation Add the fifth chloroauric acid solution to the amine solution. After stirring for 30 minutes, let it stand at room temperature for 12 hours.
  • the mass ratio of the second reaction liquid, the fourth cetyltrimethylamine bromide solution, and the fifth chloroauric acid solution is 500-800:500-800:20-40.
  • the final preparation of the metal nanoparticle dispersion liquid includes the following steps: preparing a third mixed liquid: centrifuging the second reaction liquid and removing the supernatant after centrifugation; adding the second reaction liquid after centrifugation to the first Parts of cetylpyridinium chloride solution, potassium bromide solution, the fourth part of chloroauric acid solution, and the third part of vitamin C solution to obtain the third mixed solution; among them, the second reaction solution, the first part of chlorine
  • the mass ratio of cetylpyridine solution, potassium bromide solution, fourth chloroauric acid solution and third vitamin C solution is 500-800:500-800:10-30:20-40:5 -10.
  • the step of purifying the second mixed solution is performed 1-3 times; the step of purifying the second reaction solution is performed 1-3 times.
  • the step of purifying the second mixed liquid can also be more than 3 times, and the same step of purifying the second reaction liquid can also be more than 3 times, but in the actual production process, in order to ensure that the final metal nanoparticle dispersion is high At the same time of purity, the preparation efficiency also needs to be considered. Therefore, in this embodiment, the step of purifying the second mixed solution and the step of purifying the second reaction solution are generally set within 3 times.
  • the mass concentration of chloroauric acid is 0.2%-0.4%; in the cetyl trimethyl amine bromide solution, the mass of cetyl trimethyl amine bromide The concentration is 2%-4%; in the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02%-0.04%; in the silver nitrate solution, the mass concentration of silver nitrate is 0.2%-0.4%; In the vitamin C solution, the mass concentration of vitamin C is 1%-3%; in the cetylpyridinium chloride solution, the mass concentration of cetylpyridinium chloride is 3%-4%.
  • Preparing the metal plasma structured film 11 uniformly coat the metal nanoparticle dispersion on the substrate 100, and after drying, obtain the metal plasma structured film 11;
  • Fabrication of quantum dot composite film 1 coating the metal plasma structure film 11 with a polymer colloid dispersed with quantum dots, the polymer colloid of the quantum dots forms a quantum dot structure layer 12, and the quantum dots are obtained after drying and curing Composite film 1.
  • the structure of the quantum dot is a core-shell structure
  • the material used for the quantum dot of the core-shell structure is a multi-element compound semiconductor material or a doped semiconductor material.
  • the multi-element compound semiconductor material includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs , InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe binary compound semiconductor materials one or more; or Cd x Zn 1-x Se, Cd x Zn 1-x S, CuInS 2 , CuInSe 2.
  • the doped semiconductor material It includes one or more of MnSe:Cu, MnSe:Mn, CdS:Cu, CdS:Mn, In 2 S 3 :Cu, ZnO:Cu, and ZnO:Mn.
  • the polymer colloid can be selected from one or more of acrylic resin, epoxy resin, cycloolefin polymer, organosilane resin and cellulose ester, preferably cycloolefin polymer and organosilane which have good water and oxygen barrier ability. Resin.
  • the quantum dot composite film 1 prepared in this embodiment can be used on the backlight module 1.
  • the metal plasma film enhances the principle of near-field optics to improve the luminous efficiency of the quantum dot film layer, thereby improving the luminous effect of the backlight module 1 .
  • the quantum dot composite film 1 When the quantum dot composite film 1 is applied, it can be used on each film in the backlight module 1 before light is emitted.
  • the quantum dot composite film 1 is arranged on the optical film in the backlight module 1.
  • the preferred solution is to be applied on the reflective layer 2.
  • the following is an example to further illustrate the backlight module 1 of the present invention.
  • the backlight module 1 of the present invention includes a quantum dot composite film 1, a light reflecting layer 2, a light guide plate 3, and a light source 4.
  • the light reflecting layer 2 is provided on one side of the light guide plate 3, and there is a containing cavity 6 between the light reflecting layer 2 and the light guide plate 3;
  • the quantum dot composite film 1 includes a metal plasma structure film 11.
  • Quantum dot structure layer 12, the metal plasma structure film 11 covers the side of the light reflecting layer 2 facing the light guide plate 3, and the quantum dot structure layer 12 is provided on the metal plasma structure film 11 .
  • the light source 4 is arranged in the containing cavity 6.
  • the light source 4 is a blue LED lamp bead.
  • a certain amount of phosphor can be added to the light source 4, such as the containing cavity 6, according to the white point specification requirements of the light source 4.
  • the backlight module 1 of the present invention further includes a diffusion layer 5 and the like.
  • the diffusion layer 5 is provided on the light exit side 31 of the light guide plate 3.

Abstract

Disclosed are a quantum dot composite film preparation method and a backlight module. The quantum dot composite film preparation method comprises the following steps: preparing a metal nanoparticle dispersion liquid; preparing a metal plasma structure thin film; and preparing a quantum dot composite film: coating the metal plasma structure thin film with a polymer colloid on which quantum dots are dispersed, said polymer colloid forming a quantum dot structure layer, and performing drying and curing, so as to obtain a quantum dot composite film.

Description

量子点复合膜制备方法、背光模组Preparation method of quantum dot composite film and backlight module 技术领域Technical field
本发明涉及显示器等领域，具体为一种量子点复合膜制备方法、背光模组。The invention relates to the fields of displays and the like, in particular to a method for preparing a quantum dot composite film and a backlight module.
背景技术Background technique
目前市场上主流的薄膜晶体管显示器（Thin Film Transistor Liquid Crystal Display， TFT-LCD）为背光型液晶显示器，即液晶面板本身不发光，需借助背光模组提供光源以显示图像。因此，显示器可以显示的色彩与背光模组息息相关。The mainstream thin film transistor display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) is a backlit liquid crystal display, that is, the liquid crystal panel itself does not emit light, and a backlight module must be used to provide a light source to display images. Therefore, the colors that the display can display are closely related to the backlight module.
市场上，液晶显示器的主流色域水平为72%左右。为了实现更高的色域，以达成更好的色彩显示，在背光模组中应用量子点膜是一种较好的解决方案。量子点材料受到光激发时，可以发射出特定波段的光，发出的光具有半波宽窄、色纯度高的特点。利用这一特点，在背光模组中增加量子点膜层，通过LED光源激发特定的量子点材料，可以显著改善背光模组发光效果。但是，这样直接应用的量子点膜层光转化效率较低，这会导致背光模组的亮度偏低，从而影响显示效果。On the market, the mainstream color gamut level of liquid crystal displays is about 72%. In order to achieve a higher color gamut and achieve better color display, applying quantum dot film in the backlight module is a better solution. When the quantum dot material is excited by light, it can emit light of a specific wavelength, and the emitted light has the characteristics of narrow half-wave width and high color purity. Taking advantage of this feature, adding a quantum dot film layer to the backlight module, and stimulating specific quantum dot materials through the LED light source, can significantly improve the light-emitting effect of the backlight module. However, the light conversion efficiency of the quantum dot film directly applied in this way is low, which will cause the brightness of the backlight module to be low, thereby affecting the display effect.
技术问题technical problem
为了解决上述技术问题：本发明提供一种量子点复合膜制备方法、背光模组，通过形成金属纳米结构与量子点结合的量子点复合膜，应用金属等离子体结构增强近场光学的原理，以提升量子点膜层的发光效率，从而提升背光模组的发光效果。In order to solve the above technical problems: the present invention provides a method for preparing a quantum dot composite film and a backlight module, by forming a quantum dot composite film combining a metal nanostructure with quantum dots, and applying the principle of enhancing near-field optics with a metal plasma structure. Improve the luminous efficiency of the quantum dot film layer, thereby improving the luminous effect of the backlight module.
技术解决方案Technical solutions
解决上述问题的技术方案是：本发明提供一种量子点复合膜制备方法，包括以下步骤：制备金属纳米颗粒分散液；制备金属等离子体结构薄膜：将金属纳米颗粒分散液均匀地涂覆在基板上，干燥后，得到所述金属等离子体结构薄膜；制作量子点复合膜：在所述金属等离子体结构薄膜上涂覆分散有量子点的聚合物胶体，所述量子点的聚合物胶体形成量子点结构层，干燥固化后即得到量子点复合膜。The technical solution to solve the above problems is: the present invention provides a method for preparing a quantum dot composite film, which includes the following steps: preparing a metal nanoparticle dispersion; preparing a metal plasma structure film: uniformly coating the metal nanoparticle dispersion on a substrate After drying, the metal plasma structure film is obtained; the production of a quantum dot composite film: the polymer colloid dispersed with quantum dots is coated on the metal plasma structure film, and the polymer colloid of the quantum dots forms a quantum dot The dot structure layer is dried and solidified to obtain a quantum dot composite film.
在制备金属纳米颗粒分散液步骤中包括：制备第一反应液，包括以下步骤：制备第一混合液：将第一份氯金酸溶液加入至第一份十六烷基三甲基溴化胺溶液中，搅拌使之充分混合得到第一混合液；生成第一反应液：在一个大气压下，向所述第一混合液中加入温度为O℃的第一份硼氢化钠溶液，搅拌使之充分混合，之后在第一恒温条件下，水浴反应得到所述第一反应液；制备第二反应液，包括以下步骤；制备第二混合液：将第二份氯金酸溶液、第一份硝酸银溶液、第一份维生素C溶液以及所述第一反应液加入第二份十六烷基三甲基溴化胺溶液中，搅拌使之充分混合，之后在在第二恒温条件下，水浴反应，得到所述第二混合液；提纯第二混合液：离心处理所述第二混合液并除去离心后的上清液；将离心处理后的所述第二混合液重新加入至第三份十六烷基三甲基溴化胺溶液中，同时加入第三份氯金酸溶液和第二份维生素C溶液；生成第二反应液：在第三恒温条件下，水浴反应，得到所述第二反应液，并保存静置预设时间；最终制备金属纳米颗粒分散液，包括以下步骤：制备第三混合液：离心处理所述第二反应液并除去离心后的上清液；将离心处理后的所述第二反应液加入至第一份氯化十六烷基吡啶溶液中，并加入溴化钾溶液、第四份氯金酸溶液，第三份维生素C溶液，得到第三混合液；生成金属纳米颗粒分散液：室温下保存2-4小时后，离心处理所述第三混合液并除去离心后的上清液；将离心处理后的所述第三混合液重新分散至第二份氯化十六烷基吡啶溶液中，充分混合，得到所述金属纳米颗粒分散液。The step of preparing the metal nanoparticle dispersion liquid includes: preparing the first reaction liquid, including the following steps: preparing the first mixed liquid: adding the first chloroauric acid solution to the first cetyltrimethylammonium bromide In the solution, stir it to fully mix to obtain the first mixed liquid; generate the first reaction liquid: add the first sodium borohydride solution at a temperature of 0°C to the first mixed liquid under one atmosphere, and stir to make it Mix thoroughly, and then react in a water bath under the first constant temperature to obtain the first reaction solution; prepare the second reaction solution, including the following steps; prepare the second mixed solution: combine the second portion of chloroauric acid solution and the first portion of nitric acid The silver solution, the first vitamin C solution and the first reaction solution were added to the second cetyltrimethyl amine bromide solution, stirred to make them fully mixed, and then reacted in a water bath under the second constant temperature condition , Obtain the second mixed liquid; purify the second mixed liquid: centrifuge the second mixed liquid and remove the supernatant after centrifugation; add the second mixed liquid after centrifugation to the third ten Add the third part of chloroauric acid solution and the second part of vitamin C solution to the hexaalkyltrimethyl amine bromide solution at the same time; generate a second reaction liquid: under the third constant temperature condition, the water bath reacts to obtain the second The reaction solution is stored for a preset time; the final preparation of the metal nanoparticle dispersion liquid includes the following steps: preparing a third mixed solution: centrifuging the second reaction solution and removing the supernatant after centrifugation; The second reaction solution is added to the first cetylpyridinium chloride solution, potassium bromide solution, the fourth chloroauric acid solution, and the third vitamin C solution are added to obtain a third mixed solution; Generate metal nanoparticle dispersion: After storing for 2-4 hours at room temperature, centrifuge the third mixture and remove the supernatant after centrifugation; redisperse the third mixture after centrifugation to the second part Mix well in the cetylpyridinium chloride solution to obtain the metal nanoparticle dispersion.
在本发明一实施例中，在所述氯金酸溶液中，氯金酸的质量浓度为0.2％-0.4％；在所述十六烷基三甲基溴化胺溶液中，十六烷基三甲基溴化胺的质量浓度为2％-4％；在所述硼氢化钠溶液中，硼氢化钠的质量浓度为0.02％-0.04％；在所述硝酸银溶液中，硝酸银的质量浓度为0.2％-0.4％；在所述维生素C溶液中，维生素C的质量浓度为1％-3％；在所述氯化十六烷基吡啶溶液中，氯化十六烷基吡啶的质量浓度为3％-4％。In an embodiment of the present invention, in the chloroauric acid solution, the mass concentration of chloroauric acid is 0.2%-0.4%; in the cetyltrimethylammonium bromide solution, the cetyl The mass concentration of trimethylamine bromide is 2%-4%; in the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02%-0.04%; in the silver nitrate solution, the mass of silver nitrate The concentration is 0.2%-0.4%; in the vitamin C solution, the mass concentration of vitamin C is 1%-3%; in the cetylpyridinium chloride solution, the mass of cetylpyridinium chloride The concentration is 3%-4%.
在本发明一实施例中，在制备第二反应液和最终制备金属纳米颗粒分散液之间，还包括以下步骤：提纯所述第二反应液：离心处理所述第二反应液并除去离心后的上清液；将离心处理后的所述第二反应液重新加入第四份十六烷基三甲基溴化胺溶液中，并加入第五份氯金酸溶液，搅拌30分钟后，室温下静置12小时。In an embodiment of the present invention, between the preparation of the second reaction solution and the final preparation of the metal nanoparticle dispersion, the following steps are further included: purifying the second reaction solution: centrifuging the second reaction solution and removing Add the second reaction solution after centrifugation to the fourth part of cetyltrimethyl amine bromide solution, and add the fifth part of chloroauric acid solution. After stirring for 30 minutes, at room temperature Let stand for 12 hours.
在本发明一实施例中，所述提纯第二混合液步骤进行1-3次；所述提纯所述第二反应液进行1-3次。In an embodiment of the present invention, the step of purifying the second mixed liquid is performed 1-3 times; the purifying the second reaction liquid is performed 1-3 times.
在本发明一实施例中，所述量子点的结构为核壳结构，核壳结构的量子点所用材料为多元化合物半导体材料或掺杂型半导体材料。In an embodiment of the present invention, the structure of the quantum dot is a core-shell structure, and the material used for the quantum dot of the core-shell structure is a multi-element compound semiconductor material or a doped semiconductor material.
在本发明一实施例中，所述多元化合物半导体材料包括ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、MnSe、HgS、HgSe、HgTe、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、GaSe、InN、InP、InAs、InSb、TlN、TlP、TlAs、TlSb、PbS、PbSe、PbTe二元化合物半导体材料中的一种或多种；或Cd xZn 1-xSe、Cd xZn 1-xS、CuInS 2、CuInSe 2、AgInS 2、AgInSe 2、In xGa 1-xP、Cd xZn 1-xS ySe 1-y三元或以上化合物半导体材料中的一种或多种；所述掺杂型半导体材料包括MnSe:Cu、MnSe:Mn、CdS:Cu、CdS:Mn、In 2S 3:Cu、ZnO:Cu、ZnO:Mn中的一种或多种；聚合物胶体选择丙烯酸系树脂、环氧树脂、环烯烃聚合物、有机硅烷类树脂以及纤维酯中的一种或多种。 In an embodiment of the present invention, the multi-element compound semiconductor material includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb , GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe binary compound semiconductor materials one or more; or Cd x Zn 1-x Se, Cd x Zn 1 -x S, CuInS 2 , CuInSe 2 , AgInS 2 , AgInSe 2 , In x Ga 1-x P, Cd x Zn 1-x S y Se 1-y one or more of ternary or more compound semiconductor materials The doped semiconductor material includes one or more of MnSe: Cu, MnSe: Mn, CdS: Cu, CdS: Mn, In 2 S 3 : Cu, ZnO: Cu, ZnO: Mn; polymer colloid Select one or more of acrylic resin, epoxy resin, cycloolefin polymer, organosilane resin, and cellulose ester.
本发明还提供了一种背光模组，包括量子点复合膜，包括金属等离子体结构薄膜；量子点结构层，设于所述金属等离子体结构薄膜上；所述量子点复合膜为所述的量子点复合膜制备方法制得的量子点复合膜。The present invention also provides a backlight module, including a quantum dot composite film, including a metal plasma structure film; a quantum dot structure layer, arranged on the metal plasma structure film; the quantum dot composite film is the A quantum dot composite film prepared by a method for preparing a quantum dot composite film.
在本发明一实施例中，所述的背光模组还包括反光层；导光板，所述反光层设于所述导光板的一侧，所述反光层与所述导光板之间具有一容纳腔；所述金属等离子体结构薄膜覆于所述反光层朝向所述导光板的一面；以及光源，设于所述容纳腔内。In an embodiment of the present invention, the backlight module further includes a light-reflecting layer; a light-guide plate, the light-reflecting layer is provided on one side of the light-guide plate, and there is an accommodation between the light-reflective layer and the light-guide plate The cavity; the metal plasma structure film is covered on the side of the light reflecting layer facing the light guide plate; and the light source is arranged in the containing cavity.
在本发明一实施例中，所述光源为蓝色LED灯珠。In an embodiment of the present invention, the light source is a blue LED lamp bead.
有益效果Beneficial effect
本发明的量子点复合膜制备方法，通过形成金属纳米结构与量子点结合的量子点复合膜，应用金属等离子体结构增强近场光学的原理，以提升量子点膜层的发光效率，The preparation method of the quantum dot composite film of the present invention is to form a quantum dot composite film in which a metal nano structure and a quantum dot are combined, and apply the principle of enhancing near-field optics with a metal plasma structure to improve the luminous efficiency of the quantum dot film.
本发明的背光模组，通过在反光层上设置量子点复合膜，从而提升背光模组的发光效果，且量子点复合膜设置在反光层，能够有利于获得更高的光转换效率，以及能够减少量子点使用量，节省材料。The backlight module of the present invention improves the light-emitting effect of the backlight module by arranging the quantum dot composite film on the reflective layer, and the quantum dot composite film is arranged on the reflective layer, which can help to obtain higher light conversion efficiency and can Reduce the amount of quantum dots used and save materials.
附图说明Description of the drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly describe the technical solutions in the embodiments of the present invention, the following will briefly introduce the accompanying drawings used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
下面结合附图和实施例对本发明作进一步解释。The present invention will be further explained below in conjunction with the drawings and embodiments.
图1是本发明实施例的量子点复合膜制备方法形成在基板上的量子点复合膜的结构图。FIG. 1 is a structural diagram of a quantum dot composite film formed on a substrate by a method for preparing a quantum dot composite film according to an embodiment of the present invention.
图2是本发明实施例的背光模组结构图，主要体现量子点复合膜在背光模组中的一种具体安装结构。2 is a structural diagram of a backlight module according to an embodiment of the present invention, which mainly reflects a specific installation structure of the quantum dot composite film in the backlight module.
其中，among them,
10背光模组；                       100基板；10 Backlight module; 100 substrates;
1量子点复合膜；                    2反光层；1 Quantum dot composite film; 2 reflective layer;
3导光板；                          4光源；3 Light guide plate; 4 light source;
5扩散层；                          6容纳腔；5 Diffusion layer; 6 containing cavity;
11金属等离子体结构薄膜；           12量子点结构层；11Metal plasma structure film; 12 quantum dot structure layer;
31出光侧。31 The light-emitting side.
本发明的实施方式Embodiments of the invention
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。The following describes the embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The following embodiments described with reference to the accompanying drawings are exemplary, and are only used to explain the present invention, and cannot be understood as a limitation to the present invention.
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。The description of the following embodiments refers to the attached drawings to illustrate specific embodiments in which the present invention can be implemented. The directional terms mentioned in the present invention, such as "up", "down", "front", "rear", "left", "right", "top", "bottom", etc., are only for reference to additional drawings direction. Therefore, the directional terms used are used to describe and understand the present invention, rather than to limit the present invention.
如图1所示，本实施例所要制备的量子点复合膜1，包括金属等离子体结构薄膜11、量子点结构层12，所述量子点结构层12设于所述金属等离子体结构薄膜11上。As shown in FIG. 1, the quantum dot composite film 1 to be prepared in this embodiment includes a metal plasma structure film 11, a quantum dot structure layer 12, and the quantum dot structure layer 12 is disposed on the metal plasma structure film 11. .
其一实施例中，本发明的量子点复合膜1制备方法，包括以下步骤：In one embodiment, the preparation method of the quantum dot composite film 1 of the present invention includes the following steps:
制备金属纳米颗粒分散液，包括Preparation of metal nanoparticle dispersion, including
制备第一反应液，包括以下步骤：制备第一混合液：将第一份氯金酸溶液加入至第一份十六烷基三甲基溴化胺溶液中，搅拌30min，使之充分混合得到第一混合液。生成第一反应液：在一个大气压下，向所述第一混合液中加入温度为O℃的第一份硼氢化钠溶液，搅拌使之充分混合，本实施例中，所述第一份硼氢化钠溶液经冰水冷却至O℃。之后在第一恒温条件下，本实施例中为30℃恒温条件下，水浴反应得到所述第一反应液。其中，所述第一份氯金酸溶液、第一份十六烷基三甲基溴化胺溶液、第一份硼氢化钠溶液的质量份数比为4-6：200:10-20。The preparation of the first reaction solution includes the following steps: preparation of the first mixed solution: adding the first chloroauric acid solution to the first cetyltrimethylammonium bromide solution, stirring for 30 minutes, and mixing it thoroughly to obtain The first mixed solution. Generate the first reaction liquid: Add the first sodium borohydride solution with a temperature of 0°C to the first mixed liquid under one atmosphere, and stir to make it fully mixed. In this embodiment, the first boron The sodium hydride solution was cooled to 0°C with ice water. Then, under the first constant temperature condition, in this embodiment, under the constant temperature condition of 30° C., the water bath reaction is performed to obtain the first reaction liquid. Wherein, the mass ratio of the first chloroauric acid solution, the first cetyltrimethyl amine bromide solution, and the first sodium borohydride solution is 4-6:200:10-20.
制备第二反应液，包括以下步骤；制备第二混合液：将第二份氯金酸溶液、第一份硝酸银溶液、第一份维生素C溶液以及所述第一反应液加入第二份十六烷基三甲基溴化胺溶液中，搅拌使之充分混合，之后在在第二恒温条件下，本实施例中为30℃恒温条件下，水浴反应，得到所述第二混合液；其中，第二份氯金酸溶液、第一份硝酸银溶液、第一份维生素C溶液、第一反应液的质量份数比为20-40：2-4：4-6：500-800。提纯第二混合液：离心处理所述第二混合液并除去离心后的上清液；将离心处理后的所述第二混合液重新加入至第三份十六烷基三甲基溴化胺溶液中，同时加入第三份氯金酸溶液和第二份维生素C溶液；生成第二反应液：在第三恒温条件下，本实施例中为40℃恒温条件下，水浴反应，得到所述第二反应液，并保存静置预设时间。其中，第二混合液、第三份十六烷基三甲基溴化胺溶液、第三份氯金酸溶液和第二份维生素C溶液的质量份数比为：500-800：500-800：20-40：5-10。The preparation of the second reaction liquid includes the following steps; preparation of the second mixed liquid: adding the second part of chloroauric acid solution, the first part of silver nitrate solution, the first part of vitamin C solution and the first part of the reaction liquid to the second part of ten In the hexaalkyltrimethylamine bromide solution, stir to make it fully mixed, and then under the second constant temperature condition, in this embodiment, under the constant temperature condition of 30°C, the water bath reacts to obtain the second mixed solution; wherein , The mass ratio of the second chloroauric acid solution, the first silver nitrate solution, the first vitamin C solution, and the first reaction solution is 20-40:2-4:4-6:500-800. Purify the second mixture: centrifuge the second mixture and remove the supernatant after centrifugation; add the second mixture after the centrifugation to the third part of cetyltrimethylammonium bromide To the solution, add the third part of chloroauric acid solution and the second part of vitamin C solution at the same time; generate a second reaction solution: under the third constant temperature condition, in this embodiment, the temperature is 40°C constant temperature condition, the water bath reaction is obtained, The second reaction solution should be kept for a preset time. Among them, the mass ratio of the second mixed liquid, the third cetyltrimethyl amine bromide solution, the third chloroauric acid solution and the second vitamin C solution is: 500-800: 500-800 : 20-40: 5-10.
提纯所述第二反应液：离心处理所述第二反应液并除去离心后的上清液；将离心处理后的所述第二反应液重新加入第四份十六烷基三甲基溴化胺溶液中，并加入第五份氯金酸溶液，搅拌30分钟后，室温下静置12小时。其中，所述第二反应液、第四份十六烷基三甲基溴化胺溶液、第五份氯金酸溶液的质量份数比为：500-800：500-800：20-40。Purify the second reaction liquid: centrifuge the second reaction liquid and remove the supernatant after centrifugation; add the fourth part of the hexadecyltrimethyl bromide to the second reaction liquid after centrifugation Add the fifth chloroauric acid solution to the amine solution. After stirring for 30 minutes, let it stand at room temperature for 12 hours. Wherein, the mass ratio of the second reaction liquid, the fourth cetyltrimethylamine bromide solution, and the fifth chloroauric acid solution is 500-800:500-800:20-40.
最终制备金属纳米颗粒分散液，包括以下步骤：制备第三混合液：离心处理所述第二反应液并除去离心后的上清液；将离心处理后的所述第二反应液加入至第一份氯化十六烷基吡啶溶液中，并加入溴化钾溶液、第四份氯金酸溶液，第三份维生素C溶液，得到第三混合液；其中，第二反应液、第一份氯化十六烷基吡啶溶液、溴化钾溶液、第四份氯金酸溶液、第三份维生素C溶液的质量份数比为500-800：500-800：10-30：20-40：5-10。生成金属纳米颗粒分散液：室温下保存2-4小时后，离心处理所述第三混合液并除去离心后的上清液；将离心处理后的所述第三混合液重新分散至第二份氯化十六烷基吡啶溶液中，充分混合，得到所述金属纳米颗粒分散液。第三混合液、第二份氯化十六烷基吡啶溶液的质量份数比为：1:2。The final preparation of the metal nanoparticle dispersion liquid includes the following steps: preparing a third mixed liquid: centrifuging the second reaction liquid and removing the supernatant after centrifugation; adding the second reaction liquid after centrifugation to the first Parts of cetylpyridinium chloride solution, potassium bromide solution, the fourth part of chloroauric acid solution, and the third part of vitamin C solution to obtain the third mixed solution; among them, the second reaction solution, the first part of chlorine The mass ratio of cetylpyridine solution, potassium bromide solution, fourth chloroauric acid solution and third vitamin C solution is 500-800:500-800:10-30:20-40:5 -10. Generate metal nanoparticle dispersion: After storing for 2-4 hours at room temperature, centrifuge the third mixture and remove the supernatant after centrifugation; redisperse the third mixture after centrifugation to the second part Mix well in the cetylpyridinium chloride solution to obtain the metal nanoparticle dispersion. The mass ratio of the third mixed liquid and the second cetylpyridinium chloride solution is 1:2.
在制备过程中，所述提纯第二混合液步骤进行1-3次；所述提纯所述第二反应液步骤进行1-3次。当然，提纯第二混合液步骤还可以大于3次，同样的提纯所述第二反应液步骤还可以大于3次，但在实际的生产过程中，为了保证最终生成的金属纳米颗粒分散液的高纯度的同时，也需要考虑到制备效率，因此，本实施例中，提纯第二混合液步骤和提纯所述第二反应液步骤一般设定为3次以内。In the preparation process, the step of purifying the second mixed solution is performed 1-3 times; the step of purifying the second reaction solution is performed 1-3 times. Of course, the step of purifying the second mixed liquid can also be more than 3 times, and the same step of purifying the second reaction liquid can also be more than 3 times, but in the actual production process, in order to ensure that the final metal nanoparticle dispersion is high At the same time of purity, the preparation efficiency also needs to be considered. Therefore, in this embodiment, the step of purifying the second mixed solution and the step of purifying the second reaction solution are generally set within 3 times.
在所述氯金酸溶液中，氯金酸的质量浓度为0.2％-0.4％；在所述十六烷基三甲基溴化胺溶液中，十六烷基三甲基溴化胺的质量浓度为2％-4％；在所述硼氢化钠溶液中，硼氢化钠的质量浓度为0.02％-0.04％；在所述硝酸银溶液中，硝酸银的质量浓度为0.2％-0.4％；在所述维生素C溶液中，维生素C的质量浓度为1％-3％；在所述氯化十六烷基吡啶溶液中，氯化十六烷基吡啶的质量浓度为3％-4％。In the chloroauric acid solution, the mass concentration of chloroauric acid is 0.2%-0.4%; in the cetyl trimethyl amine bromide solution, the mass of cetyl trimethyl amine bromide The concentration is 2%-4%; in the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02%-0.04%; in the silver nitrate solution, the mass concentration of silver nitrate is 0.2%-0.4%; In the vitamin C solution, the mass concentration of vitamin C is 1%-3%; in the cetylpyridinium chloride solution, the mass concentration of cetylpyridinium chloride is 3%-4%.
制备金属等离子体结构薄膜11：将金属纳米颗粒分散液均匀地涂覆在基板100上，干燥后，得到所述金属等离子体结构薄膜11；Preparing the metal plasma structured film 11: uniformly coat the metal nanoparticle dispersion on the substrate 100, and after drying, obtain the metal plasma structured film 11;
制作量子点复合膜1：在所述金属等离子体结构薄膜11上涂覆分散有量子点的聚合物胶体，所述量子点的聚合物胶体形成量子点结构层12，干燥固化后即得到量子点复合膜1。Fabrication of quantum dot composite film 1: coating the metal plasma structure film 11 with a polymer colloid dispersed with quantum dots, the polymer colloid of the quantum dots forms a quantum dot structure layer 12, and the quantum dots are obtained after drying and curing Composite film 1.
本实施例中，所述量子点的结构为核壳结构，核壳结构的量子点所用材料为多元化合物半导体材料或掺杂型半导体材料。所述多元化合物半导体材料包括ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、MnSe、HgS、HgSe、HgTe、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、GaSe、InN、InP、InAs、InSb、TlN、TlP、TlAs、TlSb、PbS、PbSe、PbTe二元化合物半导体材料中的一种或多种；或Cd xZn 1-xSe、Cd xZn 1-xS、CuInS 2、CuInSe 2、AgInS 2、AgInSe 2、In xGa 1-xP、Cd xZn 1-xS ySe 1-y三元或以上化合物半导体材料中的一种或多种；所述掺杂型半导体材料包括MnSe:Cu、MnSe:Mn、CdS:Cu、CdS:Mn、In 2S 3:Cu、ZnO:Cu、ZnO:Mn中的一种或多种。聚合物胶体可以选择丙烯酸系树脂、环氧树脂、环烯烃聚合物、有机硅烷类树脂以及纤维酯中的一种或多种，优选具有较好阻隔水氧能力的环烯烃聚合物与有机硅烷类树脂。 In this embodiment, the structure of the quantum dot is a core-shell structure, and the material used for the quantum dot of the core-shell structure is a multi-element compound semiconductor material or a doped semiconductor material. The multi-element compound semiconductor material includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs , InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe binary compound semiconductor materials one or more; or Cd x Zn 1-x Se, Cd x Zn 1-x S, CuInS 2 , CuInSe 2. One or more of AgInS 2 , AgInSe 2 , In x Ga 1-x P, Cd x Zn 1-x S y Se 1-y ternary or more compound semiconductor materials; the doped semiconductor material It includes one or more of MnSe:Cu, MnSe:Mn, CdS:Cu, CdS:Mn, In 2 S 3 :Cu, ZnO:Cu, and ZnO:Mn. The polymer colloid can be selected from one or more of acrylic resin, epoxy resin, cycloolefin polymer, organosilane resin and cellulose ester, preferably cycloolefin polymer and organosilane which have good water and oxygen barrier ability. Resin.
本实施例所制备的量子点复合膜1，可以用于背光模组1上，通过金属等离子体膜增强近场光学的原理，提升量子点膜层发光效率，从而提升背光模组1的发光效果。在量子点复合膜1应用时，可以用在背光模组1中的出射光前的各膜片上。将量子点复合膜1设置在背光模组1中的光学膜片上。本实施例中，为获得更高的光转换效率与更少的量子点使用量，优选方案为应用于反光层2之上，下面列举一个示例对本发明的背光模组1作进一步说明。The quantum dot composite film 1 prepared in this embodiment can be used on the backlight module 1. The metal plasma film enhances the principle of near-field optics to improve the luminous efficiency of the quantum dot film layer, thereby improving the luminous effect of the backlight module 1 . When the quantum dot composite film 1 is applied, it can be used on each film in the backlight module 1 before light is emitted. The quantum dot composite film 1 is arranged on the optical film in the backlight module 1. In this embodiment, in order to obtain higher light conversion efficiency and less amount of quantum dots used, the preferred solution is to be applied on the reflective layer 2. The following is an example to further illustrate the backlight module 1 of the present invention.
本发明的背光模组1，包括量子点复合膜1、反光层2、导光板3、光源4。其中，所述反光层2设于所述导光板3的一侧，所述反光层2与所述导光板3之间具有一容纳腔6；所述量子点复合膜1包括金属等离子体结构薄膜11、量子点结构层12，所述金属等离子体结构薄膜11覆于所述反光层2朝向所述导光板3的一面，所述量子点结构层12设于所述金属等离子体结构薄膜11上。所述光源4设于所述容纳腔6内。The backlight module 1 of the present invention includes a quantum dot composite film 1, a light reflecting layer 2, a light guide plate 3, and a light source 4. Wherein, the light reflecting layer 2 is provided on one side of the light guide plate 3, and there is a containing cavity 6 between the light reflecting layer 2 and the light guide plate 3; the quantum dot composite film 1 includes a metal plasma structure film 11. Quantum dot structure layer 12, the metal plasma structure film 11 covers the side of the light reflecting layer 2 facing the light guide plate 3, and the quantum dot structure layer 12 is provided on the metal plasma structure film 11 . The light source 4 is arranged in the containing cavity 6.
所述光源4为蓝色LED灯珠。本实施例中，为了达到一定光效，可以按照光源4的白点规格需求，选择在光源4处，如容纳腔6内，加入一定量的荧光粉。The light source 4 is a blue LED lamp bead. In this embodiment, in order to achieve a certain light effect, a certain amount of phosphor can be added to the light source 4, such as the containing cavity 6, according to the white point specification requirements of the light source 4.
另外，如图2所示，本发明的背光模组1还包括扩散层5等，所述扩散层5设于所述导光板3的出光侧31。In addition, as shown in FIG. 2, the backlight module 1 of the present invention further includes a diffusion layer 5 and the like. The diffusion layer 5 is provided on the light exit side 31 of the light guide plate 3.
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。The above are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modification, equivalent replacement and improvement made within the spirit and principle of the present invention shall be included in the protection scope of the present invention. Inside.

Claims (10)

  1. 一种量子点复合膜制备方法，其包括以下步骤：A method for preparing a quantum dot composite film, which includes the following steps:
    制备金属纳米颗粒分散液；Preparation of metal nanoparticle dispersion;
    制备金属等离子体结构薄膜：将金属纳米颗粒分散液均匀地涂覆在基板上，干燥后，得到所述金属等离子体结构薄膜；Preparing a metal plasma structure film: uniformly coating a metal nanoparticle dispersion on a substrate, and after drying, obtain the metal plasma structure film;
    制作量子点复合膜：在所述金属等离子体结构薄膜上涂覆分散有量子点的聚合物胶体，所述量子点的聚合物胶体形成量子点结构层，干燥固化后即得到量子点复合膜。Making a quantum dot composite film: coating the metal plasma structure film with a polymer colloid dispersed with quantum dots, the polymer colloid of the quantum dots forms a quantum dot structure layer, and the quantum dot composite film is obtained after drying and curing.
  2. 根据权利要求1所述的量子点复合膜制备方法，其中，在制备金属纳米颗粒分散液步骤中包括：The method for preparing a quantum dot composite film according to claim 1, wherein the step of preparing a metal nanoparticle dispersion liquid comprises:
    制备第一反应液，包括以下步骤：The preparation of the first reaction solution includes the following steps:
    制备第一混合液：将第一份氯金酸溶液加入至第一份十六烷基三甲基溴化胺溶液中，搅拌使之充分混合得到第一混合液；Prepare the first mixed solution: add the first chloroauric acid solution to the first cetyltrimethyl amine bromide solution, stir and mix it thoroughly to obtain the first mixed solution;
    生成第一反应液：在一个大气压下，向所述第一混合液中加入温度为O℃的第一份硼氢化钠溶液，搅拌使之充分混合，之后在第一恒温条件下，水浴反应得到所述第一反应液； Generate the first reaction liquid: Add the first sodium borohydride solution with a temperature of 0°C to the first mixed liquid under one atmospheric pressure, stir to make it fully mixed, and then under the first constant temperature condition, the water bath reaction is obtained The first reaction liquid;
    制备第二反应液，包括以下步骤；The preparation of the second reaction solution includes the following steps;
    制备第二混合液：将第二份氯金酸溶液、第一份硝酸银溶液、第一份维生素C溶液以及所述第一反应液加入第二份十六烷基三甲基溴化胺溶液中，搅拌使之充分混合，之后在在第二恒温条件下，水浴反应，得到所述第二混合液；Preparation of the second mixed solution: adding the second chloroauric acid solution, the first silver nitrate solution, the first vitamin C solution and the first reaction solution to the second cetyltrimethylammonium bromide solution In, stirring to make it fully mixed, and then under the second constant temperature condition, the water bath reacts to obtain the second mixed liquid;
    提纯第二混合液：离心处理所述第二混合液并除去离心后的上清液；将离心处理后的所述第二混合液重新加入至第三份十六烷基三甲基溴化胺溶液中，同时加入第三份氯金酸溶液和第二份维生素C溶液；Purify the second mixture: centrifuge the second mixture and remove the supernatant after centrifugation; add the second mixture after the centrifugation to the third part of cetyltrimethylammonium bromide In the solution, add the third chloroauric acid solution and the second vitamin C solution at the same time;
    生成第二反应液：在第三恒温条件下，水浴反应，得到所述第二反应液，并保存静置预设时间；Generate a second reaction liquid: react in a water bath under a third constant temperature condition to obtain the second reaction liquid, and store it for a preset time;
    最终制备金属纳米颗粒分散液，包括以下步骤：The final preparation of the metal nanoparticle dispersion includes the following steps:
    制备第三混合液：离心处理所述第二反应液并除去离心后的上清液；将离心处理后的所述第二反应液加入至第一份氯化十六烷基吡啶溶液中，并加入溴化钾溶液、第四份氯金酸溶液，第三份维生素C溶液，得到第三混合液；Prepare a third mixed solution: centrifuge the second reaction solution and remove the supernatant after centrifugation; add the second reaction solution after the centrifugation to the first cetylpyridinium chloride solution, and Add potassium bromide solution, the fourth chloroauric acid solution, and the third vitamin C solution to obtain a third mixed solution;
    生成金属纳米颗粒分散液：室温下保存2-4小时后，离心处理所述第三混合液并除去离心后的上清液；Generate a metal nanoparticle dispersion: After storing for 2-4 hours at room temperature, centrifuge the third mixed solution and remove the centrifuged supernatant;
    将离心处理后的所述第三混合液重新分散至第二份氯化十六烷基吡啶溶液中，充分混合，得到所述金属纳米颗粒分散液。Redisperse the third mixed solution after centrifugation into the second cetylpyridinium chloride solution and mix it thoroughly to obtain the metal nanoparticle dispersion.
  3. 根据权利要求2所述的量子点复合膜制备方法，其中，The method for preparing a quantum dot composite film according to claim 2, wherein:
    在所述氯金酸溶液中，氯金酸的质量浓度为0.2％-0.4％；In the chloroauric acid solution, the mass concentration of chloroauric acid is 0.2%-0.4%;
    在所述十六烷基三甲基溴化胺溶液中，十六烷基三甲基溴化胺的质量浓度为2％-4％；In the cetyl trimethyl amine bromide solution, the mass concentration of cetyl trimethyl amine bromide is 2%-4%;
    在所述硼氢化钠溶液中，硼氢化钠的质量浓度为0.02％-0.04％；In the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02%-0.04%;
    在所述硝酸银溶液中，硝酸银的质量浓度为0.2％-0.4％；In the silver nitrate solution, the mass concentration of silver nitrate is 0.2%-0.4%;
    在所述维生素C溶液中，维生素C的质量浓度为1％-3％；In the vitamin C solution, the mass concentration of vitamin C is 1%-3%;
    在所述氯化十六烷基吡啶溶液中，氯化十六烷基吡啶的质量浓度为3％-4％。In the cetylpyridinium chloride solution, the mass concentration of cetylpyridinium chloride is 3%-4%.
  4. 根据权利要求2所述的量子点复合膜制备方法，其中，在制备第二反应液和最终制备金属纳米颗粒分散液之间，还包括以下步骤：The method for preparing a quantum dot composite film according to claim 2, wherein between preparing the second reaction liquid and finally preparing the metal nanoparticle dispersion liquid, the method further comprises the following steps:
    提纯所述第二反应液：离心处理所述第二反应液并除去离心后的上清液；将离心处理后的所述第二反应液重新加入第四份十六烷基三甲基溴化胺溶液中，并加入第五份氯金酸溶液，搅拌30分钟后，室温下静置12小时。Purify the second reaction liquid: centrifuge the second reaction liquid and remove the supernatant after centrifugation; add the fourth part of the hexadecyltrimethyl bromide to the second reaction liquid after centrifugation Add the fifth chloroauric acid solution to the amine solution. After stirring for 30 minutes, let it stand at room temperature for 12 hours.
  5. 根据权利要求4所述的量子点复合膜制备方法，其中，所述提纯第二混合液步骤进行1-3次；所述提纯所述第二反应液进行1-3次。The method for preparing a quantum dot composite film according to claim 4, wherein the step of purifying the second mixed solution is performed 1-3 times; and the purification of the second reaction solution is performed 1-3 times.
  6. 根据权利要求1所述的量子点复合膜制备方法，其中，所述量子点的结构为核壳结构，核壳结构的量子点所用材料为多元化合物半导体材料或掺杂型半导体材料。The method for preparing a quantum dot composite film according to claim 1, wherein the structure of the quantum dot is a core-shell structure, and the material of the quantum dot of the core-shell structure is a multi-element compound semiconductor material or a doped semiconductor material.
  7. 根据权利要求6所述的量子点复合膜制备方法，其中，The method for preparing a quantum dot composite film according to claim 6, wherein:
    所述多元化合物半导体材料包括ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、MnSe、HgS、HgSe、HgTe、AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、GaSe、InN、InP、InAs、InSb、TlN、TlP、TlAs、TlSb、PbS、PbSe、PbTe二元化合物半导体材料中的一种或多种；或The multi-element compound semiconductor material includes ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs , InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe binary compound semiconductor materials one or more; or
    Cd xZn 1-xSe、Cd xZn 1-xS、CuInS 2、CuInSe 2、AgInS 2、AgInSe 2、In xGa 1-xP、Cd xZn 1-xS ySe 1-y三元或以上化合物半导体材料中的一种或多种； Cd x Zn 1-x Se, Cd x Zn 1-x S, CuInS 2 , CuInSe 2 , AgInS 2 , AgInSe 2 , In x Ga 1-x P, Cd x Zn 1-x S y Se 1-y ternary Or one or more of the above compound semiconductor materials;
    所述掺杂型半导体材料包括MnSe:Cu、MnSe:Mn、CdS:Cu、CdS:Mn、In 2S 3:Cu、ZnO:Cu、ZnO:Mn中的一种或多种； The doped semiconductor material includes one or more of MnSe:Cu, MnSe:Mn, CdS:Cu, CdS:Mn, In 2 S 3 :Cu, ZnO:Cu, and ZnO:Mn;
    聚合物胶体选择丙烯酸系树脂、环氧树脂、环烯烃聚合物、有机硅烷类树脂以及纤维酯中的一种或多种。The polymer colloid is selected from one or more of acrylic resin, epoxy resin, cycloolefin polymer, organosilane resin, and cellulose ester.
  8. 一种背光模组，其包括量子点复合膜，包括A backlight module includes a quantum dot composite film, including
    金属等离子体结构薄膜；Metal plasma structure film;
    量子点结构层，设于所述金属等离子体结构薄膜上；The quantum dot structure layer is arranged on the metal plasma structure film;
    所述量子点复合膜为通过如权利要求1所述的量子点复合膜制备方法制得的量子点复合膜。The quantum dot composite film is a quantum dot composite film prepared by the method for preparing a quantum dot composite film according to claim 1.
  9. 根据权利要求8所述的背光模组，其还包括The backlight module according to claim 8, further comprising
    反光层；Reflective layer
    导光板，所述反光层设于所述导光板的一侧，所述反光层与所述导光板之间具有一容纳腔；所述金属等离子体结构薄膜覆于所述反光层朝向所述导光板的一面；以及The light guide plate, the light reflecting layer is arranged on one side of the light guide plate, and there is an accommodating cavity between the light reflecting layer and the light guide plate; the metal plasma structure film covers the light reflecting layer toward the guide The bare side; and
    光源，设于所述容纳腔内。The light source is arranged in the containing cavity.
  10. 根据权利要求9所述的背光模组，其中，所述光源为蓝色LED灯珠。9. The backlight module of claim 9, wherein the light source is a blue LED lamp bead.
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