CN110028949A - The compound membrane preparation method of quantum dot, backlight module - Google Patents
The compound membrane preparation method of quantum dot, backlight module Download PDFInfo
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- CN110028949A CN110028949A CN201910222443.8A CN201910222443A CN110028949A CN 110028949 A CN110028949 A CN 110028949A CN 201910222443 A CN201910222443 A CN 201910222443A CN 110028949 A CN110028949 A CN 110028949A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 150000001875 compounds Chemical class 0.000 title claims abstract description 13
- 239000012528 membrane Substances 0.000 title abstract 9
- 239000002131 composite material Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000006185 dispersion Substances 0.000 claims abstract description 21
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 21
- 239000000084 colloidal system Substances 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims description 144
- 239000010408 film Substances 0.000 claims description 65
- 238000006243 chemical reaction Methods 0.000 claims description 57
- 239000011259 mixed solution Substances 0.000 claims description 45
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 36
- 239000002253 acid Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 25
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 23
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 20
- ZZZCUOFIHGPKAK-UHFFFAOYSA-N D-erythro-ascorbic acid Natural products OCC1OC(=O)C(O)=C1O ZZZCUOFIHGPKAK-UHFFFAOYSA-N 0.000 claims description 18
- 229930003268 Vitamin C Natural products 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 235000019154 vitamin C Nutrition 0.000 claims description 18
- 239000011718 vitamin C Substances 0.000 claims description 18
- 229960001927 cetylpyridinium chloride Drugs 0.000 claims description 14
- YMKDRGPMQRFJGP-UHFFFAOYSA-M cetylpyridinium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+]1=CC=CC=C1 YMKDRGPMQRFJGP-UHFFFAOYSA-M 0.000 claims description 14
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 13
- 239000012279 sodium borohydride Substances 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 12
- 239000006228 supernatant Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 9
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- -1 MnSe Inorganic materials 0.000 claims description 6
- 239000011258 core-shell material Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 4
- 150000001282 organosilanes Chemical class 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- 229910003373 AgInS2 Inorganic materials 0.000 claims description 3
- 229910017115 AlSb Inorganic materials 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910005540 GaP Inorganic materials 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910005543 GaSe Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910004262 HgTe Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 229920002678 cellulose Polymers 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000012295 chemical reaction liquid Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133615—Edge-illuminating devices, i.e. illuminating from the side
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a kind of compound membrane preparation methods of quantum dot, backlight module, the compound membrane preparation method of quantum dot is the following steps are included: prepare dispersion solution of metal nanoparticle: prepare metallic plasma structural membrane: production quantum dot composite membrane: coating is dispersed with the polymeric colloid of quantum dot on the metallic plasma structural membrane, the polymeric colloid of the quantum dot forms quantum point structure layer, obtains quantum dot composite membrane after dry solidification.The compound membrane preparation method of quantum dot of the invention, by forming quantum dot composite membrane of the metal Nano structure in conjunction with quantum dot, applied metal plasma structure enhances the principle of near field optic, to promote the luminous efficiency of quantum dot film layer.
Description
Technical Field
The invention relates to the field of displays and the like, in particular to a preparation method of a quantum dot composite film and a backlight module.
Background
Currently, a mainstream Thin Film Transistor display (TFT-LCD) in the market is a backlight type Liquid crystal display, that is, the Liquid crystal panel itself does not emit light, and a backlight module is needed to provide a light source to display an image. Therefore, the colors that the display can display are closely related to the backlight module.
In the market, the mainstream color gamut level of liquid crystal displays is about 72%. In order to realize a higher color gamut and achieve better color display, the application of the quantum dot film in the backlight module is a better solution. When the quantum dot material is excited by light, the quantum dot material can emit light with a specific waveband, and the emitted light has the characteristics of narrow half-wave width and high color purity. By utilizing the characteristic, the quantum dot film layer is added in the backlight module, and the LED light source excites specific quantum dot materials, so that the light-emitting effect of the backlight module can be obviously improved. However, the quantum dot film layer directly applied has low light conversion efficiency, which results in low brightness of the backlight module, thereby affecting the display effect.
Disclosure of Invention
In order to solve the technical problems: the invention provides a preparation method of a quantum dot composite film and a backlight module.
The technical scheme for solving the problems is as follows: the invention provides a preparation method of a quantum dot composite film, which comprises the following steps: preparing a metal nanoparticle dispersion liquid; preparing a metal plasma structure film: uniformly coating the metal nanoparticle dispersion liquid on a substrate, and drying to obtain the metal plasma structure film; preparing a quantum dot composite film: and coating the polymer colloid dispersed with the quantum dots on the metal plasma structure film, forming a quantum dot structure layer by the polymer colloid of the quantum dots, and drying and curing to obtain the quantum dot composite film.
The step of preparing the metal nanoparticle dispersion liquid comprises the following steps: preparing a first reaction solution, comprising the steps of: preparing a first mixed solution: adding the first part of chloroauric acid solution into the first part of hexadecyl trimethyl ammonium bromide solution, and stirring to fully mix the chloroauric acid solution and the hexadecyl trimethyl ammonium bromide solution to obtain a first mixed solution; generating a first reaction solution: adding a first part of sodium borohydride solution with the temperature of O ℃ into the first mixed solution under one atmosphere, stirring to fully mix the sodium borohydride solution and the first mixed solution, and then carrying out water bath reaction under a first constant temperature condition to obtain a first reaction solution; preparing a second reaction solution, comprising the following steps; preparing a second mixed solution: adding a second part of chloroauric acid solution, a first part of silver nitrate solution, a first part of vitamin C solution and the first reaction solution into a second part of hexadecyl trimethyl ammonium bromide solution, stirring to fully mix, and then carrying out water bath reaction under a second constant temperature condition to obtain a second mixed solution; purifying the second mixed solution: centrifuging the second mixed solution and removing the centrifuged supernatant; adding the centrifuged second mixed solution into a third part of hexadecyl trimethyl ammonium bromide solution again, and simultaneously adding a third part of chloroauric acid solution and a second part of vitamin C solution; generating a second reaction solution: performing water bath reaction under a third constant temperature condition to obtain a second reaction solution, and storing and standing for a preset time; finally preparing a metal nanoparticle dispersion, comprising the steps of: preparing a third mixed solution: centrifuging the second reaction solution and removing the centrifuged supernatant; adding the centrifuged second reaction solution into a first part of cetylpyridinium chloride solution, and adding a potassium bromide solution, a fourth part of chloroauric acid solution and a third part of vitamin C solution to obtain a third mixed solution; generating a metal nanoparticle dispersion liquid: after being stored for 2-4 hours at room temperature, the third mixed solution is centrifugally treated, and the centrifuged supernatant is removed; and re-dispersing the centrifuged third mixed solution into a second part of cetylpyridinium chloride solution, and fully mixing to obtain the metal nanoparticle dispersion solution.
In one embodiment of the invention, the mass concentration of the chloroauric acid in the chloroauric acid solution is 0.2% -0.4%; in the hexadecyl trimethyl ammonium bromide solution, the mass concentration of the hexadecyl trimethyl ammonium bromide is 2-4%; in the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02-0.04%; in the silver nitrate solution, the mass concentration of silver nitrate is 0.2-0.4%; in the vitamin C solution, the mass concentration of the vitamin C is 1-3%; in the cetylpyridinium chloride solution, the mass concentration of the cetylpyridinium chloride is 3% -4%.
In an embodiment of the present invention, between preparing the second reaction solution and finally preparing the metal nanoparticle dispersion solution, the following steps are further included: purifying the second reaction solution: centrifuging the second reaction solution and removing the centrifuged supernatant; and adding the centrifuged second reaction solution into a fourth hexadecyl trimethyl ammonium bromide solution, adding a fifth chloroauric acid solution, stirring for 30 minutes, and standing at room temperature for 12 hours.
In an embodiment of the present invention, the step of purifying the second mixed solution is performed 1-3 times; and purifying the second reaction solution for 1-3 times.
In an embodiment of the present invention, the quantum dot has a core-shell structure, and the material used for the quantum dot of the core-shell structure is a multi-component semiconductor material or a doped semiconductor material.
In an embodiment of the present invention, the multi-component compound semiconductor material includes one or more of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe binary compound semiconductor materials; or one or more of CdxZn1-xSe, CdxZn1-xS, CuInS2, CuInSe2, AgInS2, AgInSe2, InxGa1-xP, CdxZn1-xSySe1-y ternary or higher compound semiconductor materials; the doped semiconductor material comprises one or more of MnSe, Mn, CdS, Cu, CdS, Mn, In2S3, Cu, ZnO, Cu and Mn; the polymer colloid is one or more selected from acrylic resin, epoxy resin, cyclic olefin polymer, organosilane resin and cellulose ester.
The invention also provides a backlight module which comprises the quantum dot composite film and a metal plasma structure film; the quantum dot structure layer is arranged on the metal plasma structure film; the quantum dot composite film is prepared by the preparation method of the quantum dot composite film.
In an embodiment of the present invention, the backlight module further includes a reflective layer; the light guide plate is provided with a reflecting layer, and an accommodating cavity is formed between the reflecting layer and the light guide plate; the metal plasma structure film is coated on one surface of the reflecting layer facing the light guide plate; and the light source is arranged in the accommodating cavity.
In an embodiment of the invention, the light source is a blue LED lamp bead.
The invention has the advantages that: the quantum dot composite film preparation method of the invention improves the luminous efficiency of the quantum dot film layer by forming the quantum dot composite film combining the metal nano structure and the quantum dot and applying the principle of the metal plasma structure to enhance the near-field optics,
according to the backlight module, the quantum dot composite film is arranged on the reflecting layer, so that the light emitting effect of the backlight module is improved, and the quantum dot composite film is arranged on the reflecting layer, so that higher light conversion efficiency can be obtained, the using amount of quantum dots can be reduced, and materials can be saved.
Drawings
The invention is further explained below with reference to the figures and examples.
Fig. 1 is a structural view of a quantum dot composite film formed on a substrate according to a method for preparing a quantum dot composite film according to an embodiment of the present invention.
Fig. 2 is a structural diagram of a backlight module according to an embodiment of the present invention, which mainly shows a specific installation structure of a quantum dot composite film in the backlight module.
Wherein,
10 a backlight module; 100 a substrate;
1 a quantum dot composite film; 2, a light reflecting layer;
3, a light guide plate; 4, a light source;
5 a diffusion layer; 6 an accommodating cavity;
11 a metal plasma structured thin film; 12 quantum dot structure layers;
31 light exit side.
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. The directional terms used in the present invention, such as "up", "down", "front", "back", "left", "right", "top", "bottom", etc., refer to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
As shown in fig. 1, a quantum dot composite film 1 to be prepared in this embodiment includes a metal plasma structure film 11 and a quantum dot structure layer 12, where the quantum dot structure layer 12 is disposed on the metal plasma structure film 11.
In an embodiment of the present invention, the method for preparing the quantum dot composite film 1 includes the following steps:
preparing a metal nanoparticle dispersion comprising
Preparing a first reaction solution, comprising the steps of: preparing a first mixed solution: and adding the first part of chloroauric acid solution into the first part of hexadecyl trimethyl ammonium bromide solution, and stirring for 30min to fully mix to obtain a first mixed solution. Generating a first reaction solution: adding a first part of sodium borohydride solution with the temperature of O ℃ into the first mixed solution under one atmosphere, and stirring to fully mix, wherein in the embodiment, the first part of sodium borohydride solution is cooled to O ℃ by ice water. Then, under the first constant temperature condition, in this example, under the constant temperature condition of 30 ℃, the water bath reaction is performed to obtain the first reaction liquid. The mass part ratio of the first part of chloroauric acid solution, the first part of hexadecyl trimethyl ammonium bromide solution and the first part of sodium borohydride solution is 4-6: 200:10-20.
Preparing a second reaction solution, comprising the following steps; preparing a second mixed solution: adding a second part of chloroauric acid solution, a first part of silver nitrate solution, a first part of vitamin C solution and the first reaction solution into a second part of hexadecyl trimethyl ammonium bromide solution, stirring to fully mix the solutions, and then carrying out water bath reaction under a second constant temperature condition, namely under the constant temperature condition of 30 ℃ in the embodiment, to obtain a second mixed solution; wherein the mass part ratio of the second part of chloroauric acid solution, the first part of silver nitrate solution, the first part of vitamin C solution and the first reaction solution is 20-40: 2-4: 4-6: 500-800. Purifying the second mixed solution: centrifuging the second mixed solution and removing the centrifuged supernatant; adding the centrifuged second mixed solution into a third part of hexadecyl trimethyl ammonium bromide solution again, and simultaneously adding a third part of chloroauric acid solution and a second part of vitamin C solution; generating a second reaction solution: under the third constant temperature condition, which is the constant temperature condition of 40 ℃ in this example, the reaction is carried out in a water bath to obtain the second reaction solution, and the second reaction solution is stored and kept still for a preset time. Wherein the second mixed solution, the third hexadecyl trimethyl ammonium bromide solution, the third chloroauric acid solution and the second vitamin C solution are prepared from the following components in parts by mass: 500-800: 500-800: 20-40: 5-10.
Purifying the second reaction solution: centrifuging the second reaction solution and removing the centrifuged supernatant; and adding the centrifuged second reaction solution into a fourth hexadecyl trimethyl ammonium bromide solution, adding a fifth chloroauric acid solution, stirring for 30 minutes, and standing at room temperature for 12 hours. The second reaction solution, the fourth hexadecyl trimethyl ammonium bromide solution and the fifth chloroauric acid solution are prepared from the following components in parts by mass: 500-800: 500-800: 20-40.
Finally preparing a metal nanoparticle dispersion, comprising the steps of: preparing a third mixed solution: centrifuging the second reaction solution and removing the centrifuged supernatant; adding the centrifuged second reaction solution into a first part of cetylpyridinium chloride solution, and adding a potassium bromide solution, a fourth part of chloroauric acid solution and a third part of vitamin C solution to obtain a third mixed solution; wherein the mass part ratio of the second reaction liquid, the first part of cetylpyridinium chloride solution, the potassium bromide solution, the fourth part of chloroauric acid solution and the third part of vitamin C solution is 500-: 500-800: 10-30: 20-40: 5-10. Generating a metal nanoparticle dispersion liquid: after being stored for 2-4 hours at room temperature, the third mixed solution is centrifugally treated, and the centrifuged supernatant is removed; and re-dispersing the centrifuged third mixed solution into a second part of cetylpyridinium chloride solution, and fully mixing to obtain the metal nanoparticle dispersion solution. The third mixed solution and the second cetylpyridinium chloride solution are as follows in parts by mass: 1:2.
In the preparation process, the step of purifying the second mixed solution is carried out for 1 to 3 times; and the step of purifying the second reaction solution is carried out for 1 to 3 times. Of course, the step of purifying the second mixed solution may be more than 3 times, and the step of purifying the second reaction solution may also be more than 3 times, but in an actual production process, in order to ensure high purity of the finally generated metal nanoparticle dispersion liquid, the preparation efficiency also needs to be considered, and therefore, in this embodiment, the step of purifying the second mixed solution and the step of purifying the second reaction solution are generally set to be within 3 times.
In the chloroauric acid solution, the mass concentration of the chloroauric acid is 0.2% -0.4%; in the hexadecyl trimethyl ammonium bromide solution, the mass concentration of the hexadecyl trimethyl ammonium bromide is 2-4%; in the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02-0.04%; in the silver nitrate solution, the mass concentration of silver nitrate is 0.2-0.4%; in the vitamin C solution, the mass concentration of the vitamin C is 1-3%; in the cetylpyridinium chloride solution, the mass concentration of the cetylpyridinium chloride is 3% -4%.
Preparing the metal plasma structure film 11: uniformly coating the metal nanoparticle dispersion liquid on a substrate 100, and drying to obtain the metal plasma structural film 11;
manufacturing a quantum dot composite film 1: and coating the polymer colloid dispersed with the quantum dots on the metal plasma structure film 11, forming a quantum dot structure layer 12 by the polymer colloid of the quantum dots, and drying and curing to obtain the quantum dot composite film 1.
In this embodiment, the structure of the quantum dot is a core-shell structure, and the material used for the quantum dot of the core-shell structure is a multi-component semiconductor material or a doped semiconductor material. The multi-component compound semiconductor material comprises one or more of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe and PbTe binary compound semiconductor materials; or one or more of CdxZn1-xSe, CdxZn1-xS, CuInS2, CuInSe2, AgInS2, AgInSe2, InxGa1-xP, CdxZn1-xSySe1-y ternary or higher compound semiconductor materials; the doped semiconductor material comprises one or more of MnSe, Mn, CdS, Cu, CdS, Mn, In2S3, Cu, ZnO, Cu and Mn. The polymer colloid can be one or more of acrylic resin, epoxy resin, cyclic olefin polymer, organosilane resin and cellulose ester, and preferably the cyclic olefin polymer and the organosilane resin with better water oxygen blocking capability.
The quantum dot composite film 1 prepared by the embodiment can be used on the backlight module 1, and the luminous efficiency of the quantum dot film layer is improved by the principle that the metal plasma film enhances the near field optics, so that the luminous effect of the backlight module 1 is improved. When the quantum dot composite film 1 is applied, the quantum dot composite film can be used on each film sheet in front of emergent light in the backlight module 1. The quantum dot composite film 1 is disposed on an optical film in the backlight module 1. In this embodiment, in order to obtain higher light conversion efficiency and less quantum dots, the preferred scheme is to apply the quantum dots on the reflective layer 2, and an example is listed below to further describe the backlight module 1 of the present invention.
The backlight module 1 comprises a quantum dot composite film 1, a reflecting layer 2, a light guide plate 3 and a light source 4. The light guide plate 3 is provided with a light reflecting layer 2, and an accommodating cavity 6 is arranged between the light reflecting layer 2 and the light guide plate 3; the quantum dot composite film 1 comprises a metal plasma structure film 11 and a quantum dot structure layer 12, wherein the metal plasma structure film 11 covers one surface, facing the light guide plate 3, of the reflecting layer 2, and the quantum dot structure layer 12 is arranged on the metal plasma structure film 11. The light source 4 is arranged in the accommodating cavity 6.
The light source 4 is a blue LED lamp bead. In this embodiment, in order to achieve a certain lighting effect, a certain amount of phosphor may be added to the light source 4, for example, the accommodating cavity 6, according to the requirement of the white point specification of the light source 4.
As shown in fig. 2, the backlight module 1 of the present invention further includes a diffusion layer 5, and the diffusion layer 5 is disposed on the light exit side 31 of the light guide plate 3.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A preparation method of a quantum dot composite film is characterized by comprising the following steps:
preparing a metal nanoparticle dispersion liquid;
preparing a metal plasma structure film: uniformly coating the metal nanoparticle dispersion liquid on a substrate, and drying to obtain the metal plasma structure film;
preparing a quantum dot composite film: and coating the polymer colloid dispersed with the quantum dots on the metal plasma structure film, forming a quantum dot structure layer by the polymer colloid of the quantum dots, and drying and curing to obtain the quantum dot composite film.
2. The method for preparing a quantum dot composite film according to claim 1, wherein the step of preparing the metal nanoparticle dispersion liquid comprises:
preparing a first reaction solution, comprising the steps of:
preparing a first mixed solution: adding the first part of chloroauric acid solution into the first part of hexadecyl trimethyl ammonium bromide solution, and stirring to fully mix the chloroauric acid solution and the hexadecyl trimethyl ammonium bromide solution to obtain a first mixed solution;
generating a first reaction solution: adding a first part of sodium borohydride solution with the temperature of O ℃ into the first mixed solution under one atmosphere, stirring to fully mix the sodium borohydride solution and the first mixed solution, and then carrying out water bath reaction under a first constant temperature condition to obtain a first reaction solution;
preparing a second reaction solution, comprising the following steps;
preparing a second mixed solution: adding a second part of chloroauric acid solution, a first part of silver nitrate solution, a first part of vitamin C solution and the first reaction solution into a second part of hexadecyl trimethyl ammonium bromide solution, stirring to fully mix, and then carrying out water bath reaction under a second constant temperature condition to obtain a second mixed solution;
purifying the second mixed solution: centrifuging the second mixed solution and removing the centrifuged supernatant; adding the centrifuged second mixed solution into a third part of hexadecyl trimethyl ammonium bromide solution again, and simultaneously adding a third part of chloroauric acid solution and a second part of vitamin C solution;
generating a second reaction solution: performing water bath reaction under a third constant temperature condition to obtain a second reaction solution, and storing and standing for a preset time;
finally preparing a metal nanoparticle dispersion, comprising the steps of:
preparing a third mixed solution: centrifuging the second reaction solution and removing the centrifuged supernatant; adding the centrifuged second reaction solution into a first part of cetylpyridinium chloride solution, and adding a potassium bromide solution, a fourth part of chloroauric acid solution and a third part of vitamin C solution to obtain a third mixed solution;
generating a metal nanoparticle dispersion liquid: after being stored for 2-4 hours at room temperature, the third mixed solution is centrifugally treated, and the centrifuged supernatant is removed;
and re-dispersing the centrifuged third mixed solution into a second part of cetylpyridinium chloride solution, and fully mixing to obtain the metal nanoparticle dispersion solution.
3. The method of preparing a quantum dot composite film according to claim 2,
in the chloroauric acid solution, the mass concentration of the chloroauric acid is 0.2% -0.4%;
in the hexadecyl trimethyl ammonium bromide solution, the mass concentration of the hexadecyl trimethyl ammonium bromide is 2-4%;
in the sodium borohydride solution, the mass concentration of sodium borohydride is 0.02-0.04%;
in the silver nitrate solution, the mass concentration of silver nitrate is 0.2-0.4%;
in the vitamin C solution, the mass concentration of the vitamin C is 1-3%;
in the cetylpyridinium chloride solution, the mass concentration of the cetylpyridinium chloride is 3% -4%.
4. The method for preparing a quantum dot composite film according to claim 2, further comprising the following steps between the preparation of the second reaction solution and the final preparation of the metal nanoparticle dispersion solution:
purifying the second reaction solution: centrifuging the second reaction solution and removing the centrifuged supernatant; and adding the centrifuged second reaction solution into a fourth hexadecyl trimethyl ammonium bromide solution, adding a fifth chloroauric acid solution, stirring for 30 minutes, and standing at room temperature for 12 hours.
5. The method for preparing a quantum dot composite film according to claim 4, wherein the step of purifying the second mixed solution is performed 1 to 3 times; and purifying the second reaction solution for 1-3 times.
6. The preparation method of the quantum dot composite film according to claim 1, wherein the quantum dot has a core-shell structure, and the material used for the quantum dot with the core-shell structure is a multi-component semiconductor material or a doped semiconductor material.
7. The method of preparing a quantum dot composite film according to claim 6,
the multicomponent compound semiconductor material comprises
One or more binary compound semiconductor materials of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, MnSe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe and PbTe; or
One or more of ternary or more compound semiconductor materials of CdxZn1-xSe, CdxZn1-xS, CuInS2, CuInSe2, AgInS2, AgInSe2, InxGa1-xP, CdxZn1-xSySe 1-y;
the doped semiconductor material comprises one or more of MnSe, Mn, CdS, Cu, CdS, Mn, In2S3, Cu, ZnO, Cu and Mn;
the polymer colloid is one or more selected from acrylic resin, epoxy resin, cyclic olefin polymer, organosilane resin and cellulose ester.
8. A backlight module is characterized by comprising a quantum dot composite film, including
A metal plasma structured thin film;
the quantum dot structure layer is arranged on the metal plasma structure film;
the quantum dot composite film is prepared by the preparation method of the quantum dot composite film according to any one of claims 1 to 7.
9. The backlight module of claim 8, further comprising
A light-reflecting layer;
the light guide plate is provided with a reflecting layer, and an accommodating cavity is formed between the reflecting layer and the light guide plate; the metal plasma structure film is coated on one surface of the reflecting layer facing the light guide plate; and
the light source is arranged in the accommodating cavity.
10. The backlight module as claimed in claim 9, wherein the light source is a blue LED lamp bead.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020192016A1 (en) * | 2019-03-22 | 2020-10-01 | 深圳市华星光电技术有限公司 | Quantum dot composite film preparation method and backlight module |
| CN113719805A (en) * | 2021-09-03 | 2021-11-30 | 厦门市米宫科技有限公司 | Quantum dot reflective material and preparation method and application thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI253480B (en) * | 2003-12-25 | 2006-04-21 | Nat Applied Res Laboratories | Manufacturing method of semiconductor quantum dot with its growth assisted by gold nano particle |
| CN102962469A (en) * | 2012-03-01 | 2013-03-13 | 纳米籽有限公司 | Gold nanorod with high yield and great slenderness ratio and preparation method of gold nanorod |
| CN104209533A (en) * | 2014-07-21 | 2014-12-17 | 苏州大学 | Method for rapidly preparing gold nanorod |
| CN106654028A (en) * | 2016-11-29 | 2017-05-10 | 天津市中环量子科技有限公司 | Active brightness enhancement film and preparation method therefor |
| CN106773285A (en) * | 2016-11-30 | 2017-05-31 | 南方科技大学 | Active brightness enhancement film, preparation method thereof and method for analyzing polarization of active brightness enhancement film based on FDTD |
| CN106847797A (en) * | 2017-01-17 | 2017-06-13 | 电子科技大学 | A kind of noble metal nano particles quantum dot array luminescent device preparation method |
| CN106905974A (en) * | 2017-01-24 | 2017-06-30 | 晋江斯贝克新材料科技有限公司 | A kind of method for strengthening quantum dot light emitting with core-shell structure nanometer particle |
| CN107255532A (en) * | 2017-05-08 | 2017-10-17 | 东南大学 | A kind of SMD luminance temperature of metal phasmon and infrared ray sensor |
| CN107681277A (en) * | 2017-09-22 | 2018-02-09 | 北京师范大学 | A kind of luminous method with information storage of surface enhanced based on metal nanoparticle self-assembled structures |
| CN108130085A (en) * | 2018-01-23 | 2018-06-08 | 福州大学 | A kind of preparation method of noble metal/silica dioxide composite particles and semiconductor-quantum-point lamination quantum dot light emitting film |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609588B (en) * | 2016-01-22 | 2018-01-05 | 南京理工大学 | Au nanoparticle enhanced high-performance inorganic perovskite CsPbX3 nanocrystalline visible light detector |
| EP3323870A1 (en) * | 2016-10-19 | 2018-05-23 | Samsung Electronics Co., Ltd. | Quantum dot-polymer composite film, method of manufacturing the same, and device including the same |
| CN108192619A (en) * | 2018-01-23 | 2018-06-22 | 福州大学 | A kind of gold/silica core-shell micro-structure and the preparation method of semiconductor-quantum-point composite quantum dot light-emitting film |
| CN108232042A (en) * | 2018-01-23 | 2018-06-29 | 福州大学 | A kind of preparation method of noble metal/silica dioxide composite particles and semiconductor-quantum-point mixing light emitting diode with quantum dots device |
| CN110028949A (en) * | 2019-03-22 | 2019-07-19 | 深圳市华星光电技术有限公司 | The compound membrane preparation method of quantum dot, backlight module |
-
2019
- 2019-03-22 CN CN201910222443.8A patent/CN110028949A/en active Pending
- 2019-09-02 WO PCT/CN2019/103984 patent/WO2020192016A1/en active Application Filing
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI253480B (en) * | 2003-12-25 | 2006-04-21 | Nat Applied Res Laboratories | Manufacturing method of semiconductor quantum dot with its growth assisted by gold nano particle |
| CN102962469A (en) * | 2012-03-01 | 2013-03-13 | 纳米籽有限公司 | Gold nanorod with high yield and great slenderness ratio and preparation method of gold nanorod |
| CN104209533A (en) * | 2014-07-21 | 2014-12-17 | 苏州大学 | Method for rapidly preparing gold nanorod |
| CN106654028A (en) * | 2016-11-29 | 2017-05-10 | 天津市中环量子科技有限公司 | Active brightness enhancement film and preparation method therefor |
| CN106773285A (en) * | 2016-11-30 | 2017-05-31 | 南方科技大学 | Active brightness enhancement film, preparation method thereof and method for analyzing polarization of active brightness enhancement film based on FDTD |
| CN106847797A (en) * | 2017-01-17 | 2017-06-13 | 电子科技大学 | A kind of noble metal nano particles quantum dot array luminescent device preparation method |
| CN106905974A (en) * | 2017-01-24 | 2017-06-30 | 晋江斯贝克新材料科技有限公司 | A kind of method for strengthening quantum dot light emitting with core-shell structure nanometer particle |
| CN107255532A (en) * | 2017-05-08 | 2017-10-17 | 东南大学 | A kind of SMD luminance temperature of metal phasmon and infrared ray sensor |
| CN107681277A (en) * | 2017-09-22 | 2018-02-09 | 北京师范大学 | A kind of luminous method with information storage of surface enhanced based on metal nanoparticle self-assembled structures |
| CN108130085A (en) * | 2018-01-23 | 2018-06-08 | 福州大学 | A kind of preparation method of noble metal/silica dioxide composite particles and semiconductor-quantum-point lamination quantum dot light emitting film |
Non-Patent Citations (2)
| Title |
|---|
| MING-CHUNG WU 等: "Surface plasmon resonance enhanced photoluminescence from Au coated periodic arrays of CdSe quantum dots and polymer composite thin film", 《THIN SOLID FILMS》 * |
| 麻鹏: "荧光量子点/金纳米棒/介孔二氧化硅多功能载药微球", 《中国优秀硕士学位论文全文数据库 医药卫生科技I辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020192016A1 (en) * | 2019-03-22 | 2020-10-01 | 深圳市华星光电技术有限公司 | Quantum dot composite film preparation method and backlight module |
| CN113719805A (en) * | 2021-09-03 | 2021-11-30 | 厦门市米宫科技有限公司 | Quantum dot reflective material and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020192016A1 (en) | 2020-10-01 |
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Application publication date: 20190719 |