WO2020187304A1

WO2020187304A1 - Low-specific resistance material treatment method and treatment apparatus

Info

Publication number: WO2020187304A1
Application number: PCT/CN2020/080275
Authority: WO
Inventors: 唐万福; 王大祥; 段志军; 奚勇
Original assignee: 上海必修福企业管理有限公司
Priority date: 2019-03-20
Filing date: 2020-03-19
Publication date: 2020-09-24
Also published as: JP2022528313A; EP3943195A1; WO2020187305A1; CN113692317A; WO2020187303A1; CN114072236A

Abstract

A low-specific resistance material treatment method and a treatment apparatus, the treatment method comprising the following steps: using a conductive electrode (301) to conduct electrons to a low-specific resistance material, causing the low-specific resistance material to be charged; using an adsorption electrode (302) to attract the charged low-specific resistance material, causing the charged low-specific resistance material to move to the adsorption electrode (302). Causing a low-specific resistance material to be charged by means of conducting electrons overcomes problems caused by a low-specific resistance material easily losing charge after becoming charged, enabling the low-specific resistance material to rapidly obtain an electron after losing an electron, increasing a likelihood of causing the low-specific resistance material to become charged, and causing the low-specific resistance material to maintain a charged state; in this way, an adsorption electrode (302) can continue to exert an attractive force on the low-specific resistance material, so as to adsorb the low-specific resistance material, causing the present low-specific resistance material treatment method to have stronger collection capability and high collection effectiveness for low-specific resistance material.

Description

Low specific resistance material processing method and processing device

Technical field

The present invention relates to a low specific resistance material processing method and processing device, in particular to a low specific resistance material processing method and processing device with higher efficiency for collecting low specific resistance materials.

Background technique

At present, the field of environmental protection has gone through the steps of dust removal, desulfurization, denitration, and defogging. The black smoke, blue smoke, and yellow smoke emitted by the chimney are gone, but white smoke is added. Most of the components of white smoke are water mist, which also contains fine particles, ammonium salts, calcium, nitric acid, aerosols, etc., which are the main pollutants that need to be resolved urgently. The cyclone dust collectors, bag dust collectors, condensation demisters, wet electric dust collectors, acid mist demisters, etc. currently in use are basically ineffective. For example, at the end of ozone denitrification and wet treatment of flue gas from boilers and sintering machines, mist eliminators are used to remove water in the flue gas, but the actual mist eliminators cannot achieve the removal effect at all due to temperature differences and fine mist characteristics. Currently, the wet electrostatic precipitator is mainly used as a treatment method, but due to the deviation of the structure and charging principle, the water mist cannot be charged and adsorbed, and the efficiency of white smoke treatment is also extremely low. In this way, a large amount of the above-mentioned pollutants are discharged into the atmosphere, forming haze and acid rain. Due to the entrained emissions of fugitive dust, ammonium salts, desulfurizers, denitrifiers, fen, and high-priced heavy metals, it seriously affects the health of local people. At the same time, large amounts of industrial water are discharged, which is not conducive to saving water resources.

The above-mentioned discharged water mist is a low-resistance material. The existing technology for processing low-resistance materials has the problem that low-resistance materials are easily de-energized after being charged, and it is impossible to remove low-resistance materials discharged into the air, such as The purification and collection of acid mist in industrial exhaust is still a technical problem that needs to be solved urgently today.

Summary of the invention

In view of the above-mentioned shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a low specific resistance material processing method and device, which can collect low specific resistance materials with high collection efficiency.

In order to achieve the above objectives and other related objectives, the present invention provides the following examples:

1. Example 1 provided by the present invention: A method for processing low-resistance materials, including the following steps:

Conducting electrons to the low specific resistance material with a conductive electrode to charge the low specific resistance material;

The charged low-resistance substance is attracted by the absorption electrode, and the charged low-resistance substance is moved to the absorption electrode.

2. Example 2 provided by the present invention: including the low-resistance material processing method described in Example 1, wherein the step of conducting electrons to the low-resistance material with a conductive electrode includes: electrons located on the conductive electrode and The low-resistance substances between the adsorption electrodes are transferred to each other, so that more low-resistance substances are charged.

3. Example 3 provided by the present invention: including the low-resistance material processing method described in Example 1 or 2, wherein the low-resistance material conducts electrons between the conductive electrode and the adsorption electrode and forms a current.

4. Example 4 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-3, wherein the step of conducting electrons to the low-resistance material with a conductive electrode includes: The electrode charges the low specific resistance material by contacting the low specific resistance material.

5. Example 5 provided by the present invention: The method for processing a low-resistance material including any one of Examples 1-4, wherein the conductive electrode is in the shape of a surface, a mesh, a hole plate, a plate, a ball cage, Box-shaped or tube-shaped.

6. Example 6 provided by the present invention: The method for processing a low-resistance material including any one of Examples 1-5, wherein the conductive electrode is solid, liquid, gaseous molecular group, plasma, conductive mixed state material, biological body Naturally mixed conductive materials or artificial processing of objects to form a combination of one or more forms of conductive materials.

7. Example 7 provided by the present invention: The method for processing a low-resistance material including any one of Examples 1-6, wherein the conductive electrode is solid metal, graphite or ion-containing conductive liquid.

8. Example 8 provided by the present invention: including the method for processing low-resistance substances described in any one of Examples 1-7, wherein the adsorption electrode is in the shape of a multilayer mesh, mesh, orifice plate, tube, barrel, Ball cage shape, box shape, plate shape, particle accumulation layered or bent plate shape.

9. Example 9 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-8, wherein at least one through hole is provided on the conductive electrode.

10. Example 10 provided by the present invention: including the method for processing a low specific resistance substance according to any one of Example 9, wherein the step of conducting electrons to the low specific resistance substance with a conductive electrode includes: making the low specific resistance The resistance material passes through the through hole of the conductive electrode to charge the low specific resistance material.

11. Example 11 provided by the present invention: including the low-resistance material processing method described in Example 9 or 10, wherein the shape of the through hole on the conductive electrode is polygonal, circular, elliptical, square, rectangular, or trapezoidal , Or diamond.

12. Example 12 provided by the present invention: including the low-resistance material processing method described in any one of Examples 9-11, wherein the aperture of the through hole on the conductive electrode is 0.1-3 mm.

13. Example 13 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-12, wherein at least one through hole is provided on the adsorption electrode.

14. Example 14 provided by the present invention: including the low-resistance material processing method described in Example 13, wherein the shape of the through hole of the adsorption electrode is polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus .

15. Example 15 provided by the present invention: including the low-resistance material processing method described in Example 13 or 14, wherein the aperture of the through hole of the adsorption electrode is 0.1-3 mm.

16. Example 16: provided by the present invention: includes the method for processing a material with low specific resistance according to any one of Examples 1-15, wherein the adsorption electrode is made of a conductive material, or the surface of the adsorption electrode has a conductive material.

17. Example 17 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-16, wherein an electric field is formed between the conductive electrode and the adsorption electrode.

18. Example 18 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-17, wherein the conductive electrode is perpendicular or parallel to the adsorption electrode.

19. Example 19 provided by the present invention: The method for processing a low-resistance material including any one of Examples 1-18, wherein the conductive electrode is in a mesh shape, the adsorption electrode is in a planar shape, and the conductive electrode is parallel to The adsorption pole.

20. Example 20 provided by the present invention: includes the method for processing a low-resistance material according to any one of Examples 1-19, wherein the conductive electrode and the adsorption electrode are both planar, and the conductive electrode and the adsorption electrode Parallel.

21. Example 21 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-20, wherein the conductive electrode is a metal wire mesh.

22. Example 22 provided by the present invention: including the method for processing a material with low specific resistance according to any one of Examples 1-21, wherein the conductive electrode is in a planar shape or a spherical shape.

23. Example 23 provided by the present invention: includes the method for processing a low-resistance material according to any one of Examples 1-22, wherein the adsorption electrode is curved or spherical.

24. Example 24 provided by the present invention: including the method for processing a low-resistance substance according to any one of Examples 1-23, wherein the conductive electrode is electrically connected to an electrode of the power supply, and the adsorption electrode is connected to the power supply. The other electrode of the power supply is electrically connected.

25. Example 25 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-24, wherein the conductive electrode is electrically connected to the negative electrode of the power supply, and the adsorption electrode is connected to the power supply The positive pole is electrically connected.

26. Example 26 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-25, wherein the power-on driving voltage range of the power-on power supply may be 5-50KV.

27. Example 27 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-26, wherein the power-on driving voltage of the power-on power supply is less than the initial corona initiation voltage.

28. Example 28 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-27, wherein the power-on driving voltage of the power-on power supply is 0.1-2 kv/mm.

29. Example 29 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-28, wherein the power-on driving voltage waveform of the power-on power supply is a DC waveform, a sine wave, or a modulation waveform.

30. Example 30 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-29, wherein the power source is an AC power source, and the variable frequency pulse range of the power-on power source is 0.1 Hz to 5 GHz.

31. Example 31 provided by the present invention: including the low-resistance material processing method described in any one of Examples 1-30, wherein the conductive electrode and the adsorption electrode extend in the left-right direction, and the left end of the conductive electrode is located at the adsorption electrode The left end of the left.

32. Example 32 provided by the present invention: includes the method for processing a material with low specific resistance according to any one of Examples 1-31, wherein there are two adsorption electrodes, and the conductive electrode is located between the two adsorption electrodes.

33. Example 33 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-32, wherein the conductive electrode and the adsorption electrode constitute an adsorption unit, and there are multiple adsorption units.

34. Example 34 provided by the present invention: The method for processing a low-resistance material including any one of Examples 1-33, wherein all the adsorption units are arranged in one or more of the longitudinal, transverse, oblique, and spiral directions Distribute.

35. Example 35 provided by the present invention: including the method for processing a low-resistance material according to any one of Examples 1-34, wherein the conductive electrode and the adsorption electrode are both installed in a housing, and the housing has an inlet and Export.

36. Example 36 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-35, wherein the method further includes a flow channel located in the housing between the inlet and the outlet.

37. Example 37 provided by the present invention: including the method for processing low-resistance material described in Example 35 or 36, wherein the inlet is circular, and the diameter of the inlet is 300-1000 mm, or 500 mm.

38. Example 38 provided by the present invention: including the low specific resistance material processing method described in Example 35 or 36, wherein the outlet is circular, and the diameter of the outlet is 300-1000 mm, or 500 mm.

39. Example 39 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-38, wherein the material of the shell is metal, non-metal, conductor, non-conductor, water, and various conductive liquids , All kinds of porous materials, or all kinds of foam materials.

40. Example 40 provided by the present invention: includes the method for processing low specific resistance materials described in any one of Examples 1-39, wherein the material of the housing is stainless steel, aluminum alloy, iron alloy, conductive liquid, cloth, sponge, molecular sieve, Activated carbon, foamed iron, or foamed silicon carbide.

41. Example 41 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-40, wherein the housing includes a first barrel, a second barrel, and a barrel that are sequentially distributed from an inlet to an outlet. And the third barrel, the inlet is located at one end of the first barrel, and the outlet is located at one end of the third barrel.

42. Example 42 provided by the present invention: including the low specific resistance material processing method described in Example 41, wherein the outline size of the first barrel gradually increases from the inlet to the outlet.

43. Example 43 provided by the present invention: including the method for processing a low-resistance substance described in Example 41 or 42, wherein the first barrel has a straight tube shape.

44. Example 44 provided by the present invention: includes the method for processing a low-resistance material according to any one of Examples 41-43, wherein the second barrel has a straight tube shape, and the conductive electrode and the adsorption electrode are installed in In the second barrel.

45. Example 45 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 41 to 44, wherein the outline size of the third barrel gradually decreases from the inlet to the outlet.

46. Example 46 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 41 to 45, wherein the cross section of the second barrel is rectangular.

47. Example 47 provided by the present invention: includes the method for processing a low-resistance material according to any one of Examples 1-46, wherein the conductive electrode is fixed to the housing through an insulating member.

48. Example 48 provided by the present invention: including the low specific resistance material processing method described in Example 47, wherein the material of the insulating member is insulating mica.

49. Example 49 provided by the present invention: including the method for processing a low-resistance substance as described in Example 47 or 48, wherein the insulating member is in a columnar shape or a tower shape.

50. Example 50 provided by the present invention: includes the method for processing a low-resistance material according to any one of Examples 1-49, wherein a first connecting portion is provided on the conductive electrode, and the first connecting portion is fixed to the insulating member. Pick up.

51. Example 51 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-50, wherein a second connecting portion is provided on the inner wall of the housing, and the second connecting portion is fixed to the insulating member. Pick up.

52. Example 52 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-51, wherein the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.

53. Example 53 provided by the present invention: includes the method for processing a low-resistance substance according to any one of Examples 1-52, wherein the low-resistance substance is one of liquid, mist, solid, or plasma state or A combination of multiple forms.

54. Example 54 provided by the present invention: includes the method for processing a low specific resistance material according to any one of Examples 1-53, wherein the low specific resistance material is conductive liquid, conductive mist, conductive particles, charged liquid, charged mist, Charged particles, water, emulsion, aerosol, liquefied dust, multi-component mixture, multi-phase mixture, multi-component multi-phase mixture, water mist, emulsion mist, multi-component mixture liquid mist, multi-phase mixture liquid mist, Multi-material and multi-state mixed liquid mist, haze, steam, acid mist, water-containing exhaust gas, water-containing flue gas, gaseous molecular clusters, ion clusters, plasma, conductive powder, conductive droplets, conductive dust, liquid ion clusters, gas One or a combination of one or more forms of medium ion groups, liquid compounds, and gas compounds.

55. Example 55 provided by the present invention: includes the method for processing a low-resistance substance according to any one of Examples 1-54, wherein the low-resistance substance is water, emulsion, multi-material mixture, multi-state mixture, Or an organism with a mixture of multi-objects and multi-states.

56. Example 56 provided by the present invention: includes the low specific resistance material processing method described in any one of Examples 1-55, wherein the low specific resistance material is a conductor or a semiconductor.

57. Example 57 provided by the present invention: including the low specific resistance material processing method described in any one of Examples 1-56, which includes the following steps:

The low specific resistance material enters the flow channel from the inlet and moves toward the exit direction; when the low specific resistance material passes through the electrode, the conductive electrode conducts electrons to the low specific resistance material, and the low specific resistance material is charged.

58. Example 58 provided by the present invention: a low specific resistance material processing device, including:

The conductive electrode can conduct electrons to the low specific resistance material; when the electrons are conducted to the low specific resistance material, the low specific resistance material is charged;

The adsorption pole can exert attractive force on charged low specific resistance materials.

59. Example 59 provided by the present invention: The low specific resistance material processing device including Example 58, wherein the conductive electrode is in the shape of a surface, a mesh, a plate, a plate, a cage, a box, or a tube .

60. Example 60 provided by the present invention: includes the low-resistance material processing device described in Example 58 or 59, wherein the conductive electrode is solid, liquid, gaseous molecular cluster, plasma, conductive mixed state material, and biological body naturally mixed conductive The material or object is artificially processed to form one or a combination of forms in the conductive material.

61. Example 61 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 60, wherein the conductive electrode is solid metal, graphite or ion-containing conductive liquid.

62. Example 62 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58-61, wherein the adsorption electrode is in the shape of a multilayer mesh, mesh, orifice plate, tube, barrel, Ball cage shape, box shape, plate shape, particle accumulation layered or bent plate shape.

63. Example 63 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 62, wherein at least one through hole is provided on the conductive electrode.

64. Example 64 provided by the present invention: including the low specific resistance material processing device described in any one of Examples 58 to 63, wherein the step of conducting electrons to the low specific resistance material with a conductive electrode includes: making the The low specific resistance material passes through the through hole of the conductive electrode to charge the low specific resistance material.

65. Example 65 provided by the present invention: including the low-resistance substance processing device described in Example 63 or 64, wherein the shape of the through hole on the conductive electrode is polygonal, circular, elliptical, square, rectangular, or trapezoidal , Or diamond.

66. Example 66 provided by the present invention: including the low specific resistance material processing device described in any one of Examples 63-64, wherein the aperture of the through hole on the conductive electrode is 0.1-3 mm.

67. Example 67 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 66, wherein at least one through hole is provided on the adsorption electrode.

68. Example 68 provided by the present invention: including the low-resistance material processing device of Example 67, wherein the shape of the through hole of the adsorption electrode is polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus .

69. Example 69 provided by the present invention: including the low specific resistance material processing device described in Example 67 or 68, wherein the aperture of the through hole of the adsorption electrode is 0.1-3 mm.

70. Example 70 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 69, wherein the adsorption electrode is made of conductive material, or the surface of the adsorption electrode has conductive material.

71. Example 71 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 70, wherein an electric field is formed between the conductive electrode and the adsorption electrode.

72. Example 72 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 71, wherein the conductive electrode is perpendicular or parallel to the adsorption electrode.

73. Example 73 provided by the present invention: including the low specific resistance material processing device of any one of Examples 58-72, wherein the conductive electrode is in a mesh shape, the adsorption electrode is planar, and the conductive electrode is parallel to the adsorption electrode.

74. Example 74 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58-73, wherein the conductive electrode and the adsorption electrode are both planar, and the conductive electrode and the adsorption electrode are parallel .

75. Example 75 provided by the present invention: includes the low specific resistance substance processing device described in any one of Examples 58 to 74, wherein the conductive electrode adopts a metal wire mesh.

76. Example 76 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58 to 75, wherein the conductive electrode is in a planar shape or a spherical shape.

77. Example 77 provided by the present invention: including the low specific resistance material processing device of any one of Examples 58 to 76, wherein the adsorption electrode is in a curved or spherical shape.

78. Example 78 provided by the present invention: includes the low-resistance material processing device described in any one of Examples 58-77, wherein the conductive electrode is electrically connected to one electrode of the power source, and the adsorption electrode is connected to the power source. The other electrode of the power supply is electrically connected.

79. Example 79 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58-78, wherein the conductive electrode is electrically connected to the negative electrode of the power source, and the adsorption electrode is connected to the power source The positive pole is electrically connected.

80. Example 80 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58-79, wherein the power-on driving voltage range of the power-on power supply may be 5-50KV.

81. Example 81 provided by the present invention includes the low specific resistance material processing device described in any one of Examples 58 to 80, wherein the power-on driving voltage of the power-on power supply is less than the initial corona initiation voltage.

82. Example 82 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58 to 81, wherein the power-on driving voltage of the power-on power supply is 0.1 kv/mm-2 kv/mm.

83. Example 83 provided by the present invention includes the low specific resistance material processing device described in any one of Examples 58 to 82, wherein the power-on driving voltage waveform of the power-on power supply is a DC waveform, a sine wave, or a modulated waveform.

84. Example 84 provided by the present invention: including the low specific resistance material processing device of any one of Examples 58-83, wherein the power source is an alternating current power source, and the variable frequency pulse range of the power-on power source is 0.1 Hz-5 GHz.

85. Example 85 provided by the present invention: including the low-resistance material processing device of any one of Examples 58-84, wherein the conductive electrode and the adsorption electrode extend in the left-right direction, and the left end of the conductive electrode is located at the adsorption electrode The left end of the left.

86. Example 86 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 85, wherein there are two adsorption electrodes, and the conductive electrode is located between the two adsorption electrodes.

87. Example 87 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 86, wherein the conductive electrode and the adsorption electrode constitute an adsorption unit, and there are multiple adsorption units.

88. Example 88 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 87, wherein all the adsorption units are along one or more of the longitudinal, transverse, oblique, or spiral directions Distribution in the direction.

89. Example 89 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 88, wherein it further includes a housing with an inlet and an outlet, and the conductive electrode and the adsorption electrode are both installed in the housing in.

90. Example 90 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58-89, wherein it further includes a flow channel located in the housing at the inlet and the outlet between.

91. Example 91 provided by the present invention: including the low specific resistance substance processing device described in Example 89 or 90, wherein the inlet is circular, and the diameter of the inlet is 300-1000 mm, or 500 mm.

92. Example 92 provided by the present invention: including the low specific resistance substance processing device described in Example 89 or 90, wherein the outlet is circular, and the diameter of the outlet is 300-1000 mm, or 500 mm.

93. Example 93 provided by the present invention: includes the low-resistance substance processing device described in any one of Examples 58-92, wherein the material of the housing is metal, non-metal, conductor, non-conductor, water, and various conductive liquids , All kinds of porous materials, or all kinds of foam materials.

94. Example 94 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58-93, wherein the material of the housing is stainless steel, aluminum alloy, iron alloy, conductive liquid, cloth, sponge, molecular sieve, Activated carbon, foamed iron, or foamed silicon carbide.

95. Example 95 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58-94, wherein the housing includes a first barrel, a second barrel, and And the third barrel, the inlet is located at one end of the first barrel, and the outlet is located at one end of the third barrel.

96. Example 96 provided by the present invention: including the low specific resistance substance processing device of Example 95, wherein the outline size of the first barrel gradually increases from the inlet to the outlet.

97. Example 97 provided by the present invention: including the low-resistance substance processing device of Example 95 or 96, wherein the first barrel has a straight tube shape.

98. Example 98 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 95-97, wherein the second barrel has a straight tube shape, and the conductive electrode and the adsorption electrode are installed in the second In the barrel.

99. Example 99 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 95 to 98, wherein the outline size of the third barrel gradually decreases from the inlet to the outlet.

100. Example 100 provided by the present invention: includes the low specific resistance substance processing device described in any one of Examples 95 to 99, wherein the cross section of the second barrel is rectangular.

101. Example 101 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 100, wherein the conductive electrode is fixed to the housing through an insulating member.

102. Example 102 provided by the present invention: including the low specific resistance material processing device described in Examples 39-101, wherein the material of the insulating member is insulating mica.

103. Example 103 provided by the present invention: includes the low specific resistance material processing device described in Example 101 or 102, wherein the insulating member is in a columnar shape or a tower shape.

104. Example 104 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58-103, wherein a first connecting portion is provided on the conductive electrode, and the first connecting portion is fixed to the insulating member. Pick up.

105. Example 105 provided by the present invention: includes the low specific resistance substance processing device described in any one of Examples 58-104, wherein a second connecting portion is provided on the inner wall of the housing, and the second connecting portion is fixed to the insulating member. Pick up.

106. Example 106 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58-105, wherein the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.

107. Example 107 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 106, wherein the low specific resistance material is one of liquid, mist, solid, or plasma state or A combination of multiple forms.

108. Example 108 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 107, wherein the low specific resistance material is conductive liquid, conductive mist, conductive particles, charged liquid, charged mist, Charged particles, water, emulsion, aerosol, liquefied dust, multi-component mixture, multi-phase mixture, multi-component multi-phase mixture, water mist, emulsion mist, multi-component mixture liquid mist, multi-phase mixture liquid mist, Multi-material and multi-state mixed liquid mist, haze, steam, acid mist, water-containing exhaust gas, water-containing flue gas, gaseous molecular clusters, ion clusters, plasma, conductive powder, conductive droplets, conductive dust, liquid ion clusters, gas One or a combination of one or more forms of medium ion groups, liquid compounds, and gas compounds.

109. Example 109 provided by the present invention: includes the low specific resistance material processing device described in any one of Examples 58 to 108, wherein the low specific resistance material is water, emulsion, multi-material mixture, multi-state mixture, Or an organism that is a mixture of multi-object and multi-state.

110. Example 110 provided by the present invention: includes the low specific resistance material processing device of any one of Examples 58 to 109, wherein the low specific resistance material is a conductor or a semiconductor.

111. Example 111 provided by the present invention: includes the low specific resistance substance processing device used in any one of Examples 58-110, which includes an inlet, an outlet, and a flow channel between the inlet and the outlet, and the flow channel A conductive electrode capable of conducting electrons to a material with low specific resistance is installed; and the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%, and the processing device for the low specific resistance material also includes charging The low specific resistance material exerts an attractive force on the adsorption pole.

The working principle of the low-resistance material processing device in the present invention is: the conductive electrode is used to conduct electrons to the low-resistance material, so that the low-resistance material is charged, and the adsorption electrode is used to apply attractive force to the charged low-resistance material to attract The low specific resistance material moves to the adsorption electrode until the low specific resistance material adheres to the adsorption electrode, so as to realize the collection of the low specific resistance material on the adsorption plate; at the same time, the low specific resistance material processing device of the present invention passes through the electron-conducting The method makes the low specific resistance material charged. This method overcomes the problem caused by the low specific resistance material being easy to lose electricity after being charged, so that the low specific resistance material can quickly obtain electrons after losing the electrons, increasing the low specific resistance material The probability of charging, and keep the low-resistance material in a charged state, so that the adsorption electrode can continue to apply attractive force to the low-resistance material to absorb the low-resistance material, and make the low-resistance material processing device low The collection capacity of specific resistance materials is stronger and the collection efficiency is higher.

The low specific resistance material processing method provided by the present invention can collect low specific resistance materials with higher collection efficiency.

As mentioned above, the processing method of the present invention has the following beneficial effects:

Based on the above method, the present invention realizes the collection of low specific resistance materials on the adsorption plate; and this processing method overcomes the problem that low specific resistance materials are easy to lose electricity after being charged, so that low specific resistance materials lose electrons again The electrons can be quickly obtained to ensure that the low-resistance material remains charged. In this way, the adsorption electrode can continue to apply attractive force to the low-resistance material, so as to attract the low-resistance material, so that the treatment method is effective for the low-resistance material. The collection efficiency is higher.

In the present invention, the conductive electrode is installed in the flow channel, and the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%, so that the conductive electrode can effectively conduct electrons to the low specific resistance material.

Description of the drawings

FIG. 1 is a schematic diagram of the structure of a low-resistance substance processing device in the first embodiment of the present invention.

Figure 2 is a left side view of the low specific resistance material processing device in the first embodiment of the present invention.

Fig. 3 is a perspective view of a low specific resistance material processing device in the first embodiment of the present invention.

Fig. 4 is a schematic diagram of the structure of a low-resistance substance processing device in a second embodiment of the present invention.

Fig. 5 is a top view of a low specific resistance material processing device in a second embodiment of the present invention.

6 is a schematic structural diagram of an air intake device in an engine-based gas treatment system in a twentieth embodiment of the present invention.

Fig. 7 is a schematic structural diagram of another embodiment of the first water filter mechanism provided in the air intake device in the engine-based gas treatment system in the twentieth embodiment of the present invention.

Fig. 8 is a schematic structural diagram of the exhaust gas treatment system of a diesel engine in a twenty-first embodiment of the embodiment of the present invention.

Component label description

301 Leading electrode

3011 First connection part

302 Adsorption pole

303 Shell

3031 Imports

3032 Export

3033 The first barrel body

3034 Second barrel body

3035 Third barrel body

3036 Runner

304 Insulating parts

101 Air intake device

1011 Air inlet

1012 Separated institutions

1013 First Water Filtration Agency

1014 Electrostatic dust removal agency

10141 Anode Dust Collection Department

10142 Cathode discharge section

1015 First insulation organization

1016 Equalizing wind agency

1017 The second water filtration agency

1018 Ozone Unit

201 Ozone generator

202 Reaction field

2021 Honeycomb cavity

2022 Gap

203 Denitration device

2031 Electrocoagulation defogging unit

2032 Denitrification liquid collection unit

204 Ozone Digester

detailed description

The inventor of the present invention has provided the following low-resistance material processing device and processing method after extensive research. The low specific resistance material processing method and processing device can collect low specific resistance materials with higher collection efficiency. At the same time, the low specific resistance material in the present invention refers to a material whose unit volume resistance is less than 1×10 ⁹ ohms, where the unit volume refers to cubic centimeters; that is, a low specific resistance material per cubic centimeter has a resistance of less than 1×10 ⁹ ohms.

Some embodiments of the present invention provide a low specific resistance substance processing device, including:

The working principle of the low specific resistance material processing device in the present invention is: the conductive electrode is used to conduct electrons to the low specific resistance material, so that the low specific resistance material is charged, and the adsorption electrode is used to apply attractive force to the charged low specific resistance material to attract The low specific resistance material moves to the adsorption electrode until the low specific resistance material adheres to the adsorption electrode, so as to realize the collection of the low specific resistance material on the adsorption plate; at the same time, the low specific resistance material processing device of the present invention passes through the electron-conducting The method makes the low specific resistance material charged. This method overcomes the problem caused by the low specific resistance material being easy to lose electricity after being charged, so that the low specific resistance material can quickly obtain electrons after losing the electrons, increasing the low specific resistance material The probability of charging, and keep the low-resistance material in a charged state, so that the adsorption electrode can continue to apply attractive force to the low-resistance material to absorb the low-resistance material, and make the low-resistance material processing device low The collection capacity of specific resistance materials is stronger and the collection efficiency is higher.

At the same time, the present invention provides a low specific resistance material processing method, including the following steps:

The processing method of the present invention realizes the collection of low-resistance materials on the adsorption plate based on the above steps; and this processing method overcomes the problem that low-resistance materials are easy to lose electricity after being charged, so that the low-resistance materials are lost After the electrons, electrons can be obtained quickly to ensure that the low-resistance material remains charged. In this way, the adsorption electrode can continue to apply attractive force to the low-resistance material, so as to attract the low-resistance material, thereby making this treatment method less effective. The collection efficiency of specific resistance materials is higher.

Certain embodiments of the present invention provide a low-resistance substance processing device, including an inlet, an outlet, and a flow channel between the inlet and the outlet, and a conductive electrode that can conduct electrons to the low-resistance substance is installed in the flow channel; and The ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%, and the low specific resistance material processing device also includes an adsorption electrode that can apply attractive force to the charged low specific resistance material. The working principle of the low specific resistance material processing device in the present invention is: the low specific resistance material enters the flow channel from the inlet, the conductive electrode installed in the flow channel conducts electrons to the low specific resistance material, the low specific resistance material is charged, and the adsorption electrode is charged The low specific resistance material exerts attraction force, and the low specific resistance material moves to the adsorption electrode until the low specific resistance material adheres to the adsorption electrode, so as to realize the collection of the low specific resistance material on the adsorption plate; meanwhile, the conductive electrode is installed in the present invention In the flow channel, and the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%, so that the conductive electrode can effectively conduct electrons to the low specific resistance material; in addition, the low specific resistance material processing device of the present invention, The low specific resistance material is charged by the above-mentioned conduction electron method. This method overcomes the problem caused by the easy loss of electricity after the low specific resistance material is charged, so that the low specific resistance material can quickly obtain electrons after losing electrons, which increases The probability of charging the low-resistance material and keeping the low-resistance material in a charged state. In this way, the adsorption pole can continue to apply attractive force to the low-resistance material to adsorb the low-resistance material and make the low-resistance material. The material processing device has a stronger collection capacity and a higher collection efficiency for low specific resistance materials.

Certain embodiments of the present invention provide a low-resistance substance processing device, including an inlet, an outlet, and a flow channel between the inlet and the outlet, and a conductive electrode that can conduct electrons to the low-resistance substance is installed in the flow channel; and The ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%, and the low specific resistance material processing device also includes an adsorption electrode that can apply attractive force to the charged low specific resistance material.

Some embodiments of the present invention provide the method for processing the low specific resistance material, including the following steps:

The low specific resistance material enters the flow channel from the inlet and moves toward the outlet direction; when the low specific resistance material passes through the conductive electrode, the conductive electrode conducts electrons to the low specific resistance material, and the low specific resistance material is charged; the adsorption electrode is used to attract all charged materials. The low specific resistance material moves the charged low specific resistance material to the adsorption electrode.

The low-resistance material processing method of the present invention realizes the collection of the low-resistance material on the adsorption plate based on the above steps; at the same time, the conductive electrode is installed in the flow channel, and the cross-sectional area of the conductive electrode and the cross-sectional area of the flow channel are With a ratio of 99-10%, the low-resistance material passes through the conductive electrode, and the contact area between the low-resistance material and the conductive electrode is increased, so that the conductive electrode can effectively conduct electrons to the low-resistance material, and this treatment method overcomes The problem caused by the low specific resistance material being easily de-energized after being charged, so that the low specific resistance material can quickly obtain electrons after losing electrons to ensure that the low specific resistance material remains charged, so that the adsorption electrode can continue to be low. The specific resistance material exerts an attractive force to attract the low specific resistance material, thereby making the collection efficiency of the low specific resistance material higher in this processing method.

In an embodiment of the present invention, the conductive electrode is located in the flow channel. The cross-sectional area of the conductive electrode in the present invention is the sum of the area of the solid part of the conductive electrode along the cross-section. In addition, in some embodiments of the present invention, the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel may be 99-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40. %, or 50%.

The form of the low-resistance substance in the present invention may be one or a combination of a liquid state, a mist state, a solid state, or a plasma state. For example, the low specific resistance substance in the present invention may be conductive liquid, conductive mist, conductive particles, charged liquid, charged mist, charged particles, water, emulsion, aerosol, liquefied dust, multi-material mixture, multi-state mixture, Multi-material multi-state mixed liquid, water mist, emulsion mist, multi-material mixed liquid mist, multi-state mixed liquid mist, multi-material multi-state mixed liquid mist, haze, steam, acid mist, water-containing exhaust gas, water-containing flue gas, gaseous state Molecular clusters, ion clusters, plasma, conductive powders, conductive droplets, conductive dust, ion clusters in liquid, ion clusters in gas, compounds in liquid, compounds in gas, etc. The low-resistance substance in the present invention may also be an organism containing water, an emulsion, a multi-material mixture, a multi-state mixture, or a multi-material and multi-state mixture. The low specific resistance substance in the present invention may be a conductor or a semiconductor. The present invention can collect the low specific resistance material on the adsorption electrode by the above-mentioned processing method. The treatment device in the present invention can be used as an electrocoagulation demister, and can be applied to ozone denitration tail gas recovery, wet desulfurization flue gas dehydration, wet dust removal escape water recovery, industrial tail gas demister, emulsion purifier, oil mist static Carburetor, electronic cigarette, nuclear fusion restraint device. For example, when the treatment device is applied to the recovery of ozone denitration tail gas, the acid mist formed in the ozone denitration tail gas is a kind of low specific resistance material, and the resistance of the tail gas containing acid mist per cubic centimeter is 0.1 to 1000 ohms; The specific resistance material treatment method specifically includes the following steps: the ozone denitrification tail gas flows through the conductive electrode, and the conductive electrode conducts electrons to the acid mist in the ozone denitrification tail gas, and makes the acid mist charged; the adsorption electrode applies attraction to the charged acid mist; The mist moves to the adsorption electrode and adheres to the adsorption electrode, so as to realize the recovery of the acid mist in the ozone denitration tail gas, and prevent the acid mist in the ozone denitration tail gas from being directly discharged into the atmosphere and causing pollution to the atmosphere. At this time, the above treatment method is also called an acid mist electrostatic recovery method. The processing device and processing method of the present invention can be used for de-whitening treatment of fugitive fog, aerosol, etc. discharged from chimneys of power plants, glass plants, steel plants, and chemical plants. The invention solves the problem that the traditional wet electric precipitator cannot remove the low-resistance substances contained in the exhaust gas, including water mist, acid mist, aerosol, emulsion, liquefied dust, etc., and adopts a space power-up method to directly use electric field Adsorption and recovery of low specific resistance substances contained in tail gas. In addition, the processing method and device of the present invention can also be used to separate or enrich the target substance, that is, the low specific resistance substance from the gas phase, the liquid phase, or the sol.

In an embodiment of the present invention, the conductive electrode is electrically connected to one electrode of the power source; the adsorption electrode is electrically connected to the other electrode of the power source. In an embodiment of the present invention, the conductive electrode is electrically connected to the negative electrode of the power source, and the adsorption electrode is electrically connected to the positive electrode of the power source.

The power-up method of the low-resistance material in the present invention is to use a conductive electrode to introduce positive or negative electrons into the low-resistance material. This power-up method can quickly obtain electrons after the low-resistance material is easily de-energized, so that the low-resistance material The resistive material maintains a charged state, so that the adsorption pole can continue to attract the low specific resistance material so as to be able to adsorb the low specific resistance material. At the same time, the conductive electrode in the present invention can have a positive or negative potential; when the conductive electrode has a positive potential, the adsorption electrode has a negative potential; when the conductive electrode has a negative potential, the adsorption electrode has a positive potential. The poles are all electrically connected to the power source. Specifically, the conductive electrode and the adsorption pole can be respectively electrically connected to the positive and negative poles of the power source. The voltage of the power-on power supply is called the power-on driving voltage, and the selection of the power-on driving voltage is related to the ambient temperature and the temperature of the medium. For example, the power-on driving voltage range of the power-on power supply can be 5-50KV, 10-50KV, 5-10KV, 10-20KV, 20-30KV, 30-40KV, or 40-50KV, from bio-electricity to space haze treatment Use electricity. The power-on power supply can be a DC power supply or an AC power supply, and the waveform of the power-on driving voltage can be a DC, a sine wave, or a modulated waveform. DC power supply is used as the basic application of adsorption; sine wave is used for movement, such as the power-on driving voltage of sine wave acts between the conductive electrode and the adsorption electrode, and the generated electric field will drive the charged particles in the electric field, such as mist droplets, to adsorb Polar movement; oblique wave is used as a pulling force, and the waveform needs to be modulated according to the degree of pulling force. For example, at the edges of both ends of an asymmetric electric field, the pulling force generated on the medium has obvious directionality to drive the medium in the electric field to move in this direction . When the power supply adopts AC power, the range of its variable frequency pulse can be 0.1Hz-5GHz, 0.1Hz-1Hz, 0.5Hz-10Hz, 5Hz-100Hz, 50Hz-1KHz, 1KHz-100KHz, 50KHz-1MHz, 1MHz-100MHz , 50MHz-1GHz, 500MHz-2GHz, or 1GHz-5GHz, suitable for the adsorption of organisms to pollutant particles. The conductive electrode of the present invention can be used as a wire, and when it is in contact with a low-resistance material, it directly introduces positive and negative electrons into the low-resistance material. At this time, the low-resistance material itself can be used as an electrode. In the present invention, the low specific resistance material will repeatedly obtain and lose electrons during the process of moving from the conductive electrode to the adsorption electrode; at the same time, a large number of electrons are located between the multiple low specific resistance materials between the conductive electrode and the adsorption electrode. It transfers and finally reaches the adsorption pole, thereby forming a current, which is also called the power-on driving current. The magnitude of the power-on drive current is related to the ambient temperature, medium temperature, amount of electrons, mass of adsorbed substances, and amount of escape. For example, as the amount of electrons increases, movable particles such as fog droplets increase, and the current formed by the moving charged particles increases. The more charged substances, such as fog droplets, are adsorbed per unit time, the greater the current. The escaping droplets are only charged, but have not reached the adsorption pole, that is to say, no effective neutralization is formed, so under the same conditions, the more droplets that escape, the smaller the current. Under the same conditions, the higher the ambient temperature, the faster the velocity of gas particles and droplets, and the higher its own kinetic energy. The greater the probability of collision between itself and the conductive electrode and the adsorption electrode, the less likely it is to be adsorbed by the adsorption electrode. The escape occurs, but because the escape occurs after the electric neutralization, and possibly after repeated electric neutralization, the electron conduction velocity is correspondingly increased, and the current also increases accordingly. At the same time, because the higher the ambient temperature, the higher the momentum of the gas molecules, droplets, etc., and the less likely it is to be adsorbed by the adsorption electrode. Even after the adsorption electrode is adsorbed, it will escape from the adsorption electrode again, that is, the probability of escaping after neutralization is greater. Therefore, when the distance between the conductive electrode and the adsorption electrode remains unchanged, the above-mentioned power-on driving voltage needs to be increased, and the limit of the power-on driving voltage is to achieve the effect of air breakdown. In addition, the influence of medium temperature is basically equivalent to the influence of ambient temperature. The lower the temperature of the medium is, the smaller the energy required to excite the medium, such as fog droplets, and the smaller the kinetic energy it has. Under the same electric field force, the easier it is to be adsorbed to the adsorption electrode, resulting in a higher current. Big. The treatment device of the present invention has a better adsorption effect on cold substances. And as the concentration of the medium, such as mist droplets, increases, the probability that the charged medium will have electron transfer with other mediums before colliding with the adsorbing electrode, and thus the chance of forming effective electric neutralization will be greater, and the resulting current will be correspondingly The ground will be larger; so when the concentration of the medium is higher, the current formed is greater. The relationship between the power-on driving voltage and the medium temperature is basically the same as the relationship between the power-on driving voltage and the ambient temperature.

In an embodiment of the present invention, the power-on driving voltage of the power-on power supply can be less than the initial corona initiation voltage of the corona initiation power supply. In the absence of corona discharge, the conductive electrode of the present invention can also charge low-resistance materials , Can conduct electricity without ionization; when the power-on driving voltage can be greater than the initial corona initiation voltage of the corona initiation power supply, the corona discharge and the conductive electrode conduct electrons to the low specific resistance material to charge the low specific resistance material simultaneously exist. The corona initiating power source is a power source that can cause the conductive electrode or the adsorbing electrode to discharge when the conductive electrode and the adsorbing electrode are electrically connected to the corona initiating power source, and when the conductive electrode or the adsorbing electrode generates discharge, the gas will be ionized, causing smoke in the gas Substances such as particles acquire a negative charge. The voltage of the corona initiation power supply is called the corona initiation voltage, and the minimum value of the corona initiation voltage is called the initial corona initiation voltage; that is, when the conductive electrode and the adsorption electrode are electrically connected to the corona initiation power supply, the conductive electrode Or the minimum voltage value at which the adsorption electrode generates discharge and ionizes the gas is called the initial corona initiation voltage. For different gases, different working environments, etc., the initial corona initiation voltage may be different. However, for those skilled in the art, for a certain gas and working environment, the corresponding initial corona initiation voltage is certain. Meanwhile, in some embodiments of the present invention, the power-on driving voltage can be specifically 0.1-2 kv/mm. The power-on driving voltage of the power-on power supply is less than the air corona initiation voltage. In addition, the low specific resistance substance processing method of the present invention can be applied to the exhaust gas of an engine. In particular, the low specific resistance substance processing device and the processing method of the present invention can be used to treat low specific resistance substances such as water mist in the exhaust gas of the engine.

In an embodiment of the present invention, both the conductive electrode and the adsorption electrode extend in the left-right direction, and the left end of the conductive electrode is located to the left of the left end of the adsorption electrode.

In an embodiment of the present invention, there are two adsorption electrodes, and the conductive electrode is located between the two adsorption electrodes.

The distance between the conductive electrode and the adsorption electrode in the present invention can be set according to the power-on driving voltage between the two, the flow rate of the low specific resistance material, and the charging ability of the low specific resistance material. For example, the distance between the conductive electrode and the adsorption electrode can be 5-50mm, 5-10mm, 10-20mm, 20-30mm, 30-40mm, or 40-50mm. The larger the distance between the conductive electrode and the adsorption electrode, the higher the power-on driving voltage required to form a sufficiently strong electric field for driving the charged medium to move to the adsorption electrode quickly to prevent the medium from escaping. Under the same conditions, the larger the distance between the conductive electrode and the adsorption electrode, the closer to the center along the direction of the air flow, the faster the material flow rate; the closer the material to the adsorption electrode, the slower the flow rate; while perpendicular to the air flow direction, the charged dielectric particles , Such as fog particles, as the distance between the conductive electrode and the adsorption electrode increases, the longer it will be accelerated by the electric field without a collision. Therefore, the faster the material moves in the vertical direction before it approaches the adsorption electrode. Under the same conditions, if the power-on driving voltage remains the same, as the distance increases, the electric field intensity decreases, and the medium's ability to charge the electric field becomes weaker.

In some embodiments of the present invention, the conductive electrode may be a combination of one or more forms of solid, liquid, gas molecular cluster, or plasma. When the conductive electrode is extremely solid, the conductive electrode can be a solid metal, such as 304 steel, or other solid conductors, such as graphite, etc.; when the conductive electrode is extremely liquid, the conductive electrode can be an ion-containing conductive liquid. In addition, in some embodiments of the present invention, the conductive electrode may also be a conductive mixed material, a biological body naturally mixes a conductive material, and an object is artificially processed to form a conductive material. In the present invention, the adsorption electrode is made of conductive material, or the surface of the adsorption electrode has conductive material.

In some embodiments of the present invention, the shape of the conductive electrode may be in the shape of a surface, a mesh, a perforated plate, a plate, a ball cage, a box, or a tube. In the present invention, the mesh shape is a shape including any porous structure. When the conductive electrode has a plate shape, a ball cage shape, a box shape or a tube shape, the conductive electrode can be a non-porous structure or a porous structure. When the conductive electrode has a porous structure, one or more through holes can be provided on the conductive electrode, and the shape of the through holes on the conductive electrode can be polygonal, round, oval, square, rectangular, trapezoidal, or rhombus, etc. . The outline size of the through hole on the conductive electrode can be 0.1-3mm, 0.1-0.3mm, 0.3-0.5mm, 0.5-0.8mm, 0.8-1.0mm, 1.0-1.2mm, 1.2-1.0mm, 1.0-1.5mm, 1.5-1.8mm, 1.8-2.0mm, 2.0-2.3mm, 2.3-2.5mm, 2.5-2.8mm, or 2.8-3.0mm. In addition, in some embodiments of the present invention, the shape of the conductive electrode may also be other material natural forms or material processing forms. In the present invention, when the low specific resistance material passes through the through hole on the conductive electrode, the low specific resistance material passes through the conductive electrode to increase the contact area between the low specific resistance material and the conductive electrode and increase the charging efficiency. The through hole on the conductive electrode in the present invention is any hole that allows substances to flow through the conductive electrode.

At the same time, in some embodiments of the present invention, the shape of the adsorption electrode can be in the form of a multi-layer mesh, net, orifice, tube, barrel, ball cage, box, plate, particle accumulation layer, and bent plate. Shape, or panel shape. When the adsorption electrode is in the shape of a plate, cage, box or tube, the adsorption electrode can also have a non-porous structure or a porous structure. When the adsorption electrode has a porous structure, one or more through holes can be provided on the adsorption electrode, and the shape of the through holes of the adsorption electrode can be polygonal, circular, elliptical, square, rectangular, trapezoidal, or diamond. The outline size of the through hole of the adsorption pole can be 0.1-3mm, 0.1-0.3mm, 0.3-0.5mm, 0.5-0.8mm, 0.8-1.0mm, 1.0-1.2mm, 1.2-1.0mm, 1.0-1.5mm, 1.5 -1.8mm, 1.8-2.0mm, 2.0-2.3mm, 2.3-2.5mm, 2.5-2.8mm, or 2.8-3.0mm. The through holes on the adsorption electrode in the present invention are any holes that allow substances to flow through the adsorption electrode.

In some embodiments of the present invention, an electric field is formed between the conductive electrode and the adsorption electrode, and the electric field may be a mesh electric field or a mesh barrel electric field. For example: the conductive electrode is in the shape of a mesh, and the adsorption electrode is in a planar shape, and the conductive electrode is parallel to the adsorption electrode, thereby forming a mesh surface electric field; or the conductive electrode is in a mesh shape and is fixed by a metal wire or metal needle, and the adsorption electrode is in a barrel shape. The conductive electrode is located at the geometric symmetry center of the adsorption electrode, thereby forming a net barrel electric field. When the adsorption pole is in a planar shape, it may be planar, curved, or spherical. When the conductive electrode is in a mesh shape, it can be planar, spherical, or other geometrical shapes, and can also be rectangular or irregular. When the adsorption pole is in a barrel shape, the adsorption pole can be further evolved into various box shapes. The conductive electrode can also be changed accordingly to form an electrode and electric field layer sleeve.

In an embodiment of the present invention, the conductive electrode is perpendicular to the adsorption electrode. In an embodiment of the present invention, the conductive electrode and the adsorption electrode are parallel. In an embodiment of the present invention, the conductive electrode and the adsorption electrode are both planar, and the conductive electrode and the adsorption electrode are parallel. In an embodiment of the present invention, a wire mesh is used for the conductive electrode. In one embodiment of the present invention, the conductive electrode is flat or spherical. In an embodiment of the present invention, the adsorption electrode is curved or spherical. In an embodiment of the present invention, the conductive electrode is in a mesh shape, the adsorption electrode is in a barrel shape, the conductive electrode is located inside the adsorption electrode, and the conductive electrode is located on the central symmetry axis of the adsorption electrode.

In the present invention, the conductive electrode and the adsorption electrode constitute an adsorption unit. There may be one or more adsorption units, and the specific number is determined according to actual needs. In one embodiment, there is one adsorption unit. In another embodiment, there are multiple adsorption units, so that more low specific resistance substances can be adsorbed by multiple adsorption units, thereby improving the efficiency of collecting low specific resistance substances. When there are multiple adsorption units, the distribution of all adsorption units can be flexibly adjusted according to needs; all adsorption units can be the same or different. For example, all the adsorption units can be distributed in one or more of the longitudinal, lateral, oblique, and spiral directions to meet the requirements of different air volumes. All the adsorption units can be distributed in a rectangular array or in a pyramid shape. The aforementioned conductive electrodes and adsorption electrodes of various shapes can be freely combined to form an adsorption unit. For example, a linear conductive electrode is inserted into a tubular adsorption electrode to form an adsorption unit, and then combined with a linear conductive electrode to form a new adsorption unit. At this time, two linear conductive electrodes can be electrically connected; the new adsorption unit is Distributed in one or more of the longitudinal, transverse, oblique, and spiral directions. For another example, a linear conductive electrode is inserted into a tubular adsorption electrode to form an adsorption unit. The adsorption unit is distributed in one or more of the longitudinal, lateral, oblique, and spiral directions to form a new adsorption unit. The adsorption unit is combined with the above-mentioned conductive electrodes of various shapes to form a new adsorption unit. The distance between the conductive electrode and the adsorption electrode in the adsorption unit of the present invention can be adjusted arbitrarily to meet the requirements of different working voltages and adsorption objects. In the present invention, different adsorption units can be combined. In the present invention, different adsorption units can use the same power supply or different power supplies. When different power-on power supplies are used, the power-on driving voltage of the power-on power supplies may be the same or different. In addition, there may be multiple processing devices in the present invention, and all the processing devices may be distributed in one or more of the longitudinal, transverse, oblique, and spiral directions.

In an embodiment of the present invention, the low-resistance material processing device further includes a housing. The housing includes an inlet, an outlet, and a flow channel. The two ends of the flow channel are respectively connected to the inlet and the outlet. In an embodiment of the present invention, the inlet is circular, and the diameter of the inlet is 300-1000 mm, or 500 mm. In an embodiment of the present invention, the outlet is circular, and the diameter of the outlet is 300-1000 mm, or 500 mm. In an embodiment of the present invention, the housing includes a first barrel, a second barrel, and a third barrel that are sequentially distributed from the inlet to the outlet, the inlet is located at one end of the first barrel, and the inlet is located at one end of the third barrel. . In an embodiment of the present invention, the outline size of the first barrel gradually increases from the inlet to the outlet. In an embodiment of the present invention, the first barrel body is straight and tubular. In an embodiment of the present invention, the second barrel body is straight and tubular, and the conductive electrode and the adsorption electrode are installed in the second barrel body. In an embodiment of the present invention, the contour size of the third barrel gradually decreases from the inlet to the outlet. In an embodiment of the present invention, the cross sections of the first barrel, the second barrel, and the third barrel are all rectangular, and in an embodiment of the present invention, the cross section of the second barrel is rectangular. In an embodiment of the present invention, the material of the housing is stainless steel, aluminum alloy, iron alloy, cloth, sponge, molecular sieve, activated carbon, foamed iron, or foamed silicon carbide. In an embodiment of the present invention, the conductive electrode is connected to the housing through an insulating member. In an embodiment of the present invention, the material of the insulating member is insulating mica. In an embodiment of the present invention, the insulating member is columnar or tower-shaped. In an embodiment of the present invention, a cylindrical front connecting portion is provided on the conductive electrode, and the front connecting portion is fixedly connected to the insulating member. In an embodiment of the present invention, a cylindrical rear connecting portion is provided on the suction electrode or the inner wall of the housing, and the rear connecting portion is fixedly connected to the insulating member.

In some embodiments of the present invention, the low specific resistance material processing device further includes a housing having an inlet and an outlet, and the conductive electrode and the adsorption electrode are all installed in the housing. In the process of collecting low specific resistance materials, the low specific resistance materials enter the shell from the inlet and move toward the outlet; when the low specific resistance materials move toward the outlet, the low specific resistance materials will pass through the conductive electrode and be charged; the adsorption electrode The charged low specific resistance material is adsorbed to collect the low specific resistance material on the adsorption electrode. The invention uses the shell to guide the low specific resistance material to flow through the conductive plate to charge the low specific resistance material with the conductive electrode, and uses the adsorption electrode to collect the low specific resistance material, thereby effectively reducing the amount of the low specific resistance material flowing out from the outlet. In some embodiments of the present invention, the material of the housing can be metal, non-metal, conductor, non-conductor, water, various conductive liquids, various porous materials, or various foam materials. When the material of the shell is metal, the material may be stainless steel, aluminum alloy, or the like. When the material of the shell is non-metal, the material can be cloth or sponge. When the material of the shell is a conductor, the material may specifically be iron alloy or the like. When the material of the shell is non-conductor, the water layer formed on the surface becomes the electrode, such as the sand layer after absorbing water. When the material of the shell is water and various conductive liquids, the shell is static or flowing. When the material of the shell is various porous materials, the material may be molecular sieve or activated carbon. When the material of the shell is various foam materials, the material may specifically be foam iron, foam silicon carbide, etc. In an embodiment of the present invention, the conductive electrode is fixedly connected to the housing through an insulating member, and the material of the insulating member may be insulating mica. At the same time, in an embodiment of the present invention, the adsorption electrode is directly electrically connected to the casing. This connection method allows the casing and the adsorption electrode to have the same electric potential, so that the casing can also adsorb charged low-resistance substances, and the casing also constitutes a Adsorption pole. The casing is provided with the above-mentioned flow channel, and the conductive electrode is installed in the flow channel.

When low specific resistance substances such as water mist adhere to the adsorption electrode, condensation will form. In some embodiments of the present invention, the adsorption electrode can extend in the up and down direction, so that when the condensation accumulated on the adsorption electrode reaches a certain weight, it will flow down the adsorption electrode under the action of gravity, and finally gather at the set position or In the device, the low specific resistance material attached to the adsorption electrode can be recovered. This processing device can be used for refrigeration and demisting. In addition, an external electric field can also be used to collect substances attached to the adsorption plate. The collecting direction of the material on the adsorption plate can be the same as the airflow direction, or it can be different from the airflow direction. In the specific implementation, it is necessary to make full use of gravity to make the water droplets or water layer on the adsorption pole flow into the collection tank as soon as possible; at the same time, the direction of the airflow and its force will be used as much as possible to accelerate the speed of the water flow on the adsorption pole. Therefore, according to different installation conditions, as well as the convenience, economy and feasibility of insulation, we will try our best to achieve the above objectives, not limited to specific directions.

In some embodiments of the present invention, the above-mentioned processing device can be used independently as an adsorption device for low-resistance substances. At the same time, the above-mentioned processing device in some embodiments of the present invention can also be used in combination with a refrigeration device, a catalytic device, a corona device, a heating device, a centrifugal device, a screening device, an electromagnetic device, an irradiation device, etc., to achieve condensation. , Catalysis, corona, heating, centrifugation, screening and other functions. In addition, the above devices can also be combined arbitrarily according to site needs.

In addition, the current theory of electrostatic field charging is to use corona discharge to ionize oxygen and generate a large amount of negative oxygen ions. The negative oxygen ions are in contact with dust, and the dust is charged, and the charged dust is adsorbed by the opposite electrode. However, when it encounters low-resistance materials such as water mist, metal particles, and conductive dust, the existing electric field has almost no adsorption effect. Because the low specific resistance material is easy to lose electricity after being energized, when the moving negative oxygen ions charge the low specific resistance material, the low specific resistance material will quickly lose electricity, and the negative oxygen ions only move once, resulting in low It is difficult to recharge after the specific resistance is de-energized, or this charging method greatly reduces the probability of charging the low specific resistance material, so that the low specific resistance material is in an uncharged state, so that it is difficult for the different poles to continuously apply adsorption force to the low specific resistance material , Which ultimately leads to extremely low adsorption efficiency of the existing electric field for low specific resistance substances. In some embodiments of the present invention, the above-mentioned processing device and processing method do not use a charging method to charge these low-resistance materials, but directly transfer electrons to the low-resistance material to be charged. After losing power again, new electrons will be quickly transferred from the conductive electrode and through other low-resistance materials to the low-resistance material that has lost power, so that the low-resistance material can quickly gain electricity after losing power, which greatly increases The charging probability of the low-resistance material, such as this repetition, makes the low-resistance material as a whole in an electrified state, and enables the adsorption pole to continue to apply attractive force to the low-resistance material until the low-resistance material is adsorbed, thereby ensuring the processing device The collection efficiency of low specific resistance materials is higher. The above-mentioned method of charging low-resistance materials adopted by the present invention does not require corona wires, corona electrodes, or corona plates, etc., which simplifies the overall structure of the processing device and reduces the manufacturing cost of the processing device. At the same time, the present invention adopts the above-mentioned power-on method, so that a large number of electrons on the conductive electrode will be transferred to the adsorption electrode through the low-resistance substance and form a current. When the concentration of the low specific resistance material flowing through the processing device is greater, the electrons on the conductive electrode are more easily transferred to the adsorption electrode through the low specific resistance material, and more electrons will be transferred between the low specific resistance materials, making the conductive electrode The current formed between the adsorption electrode and the adsorption electrode is larger, and the charging probability of the low specific resistance material is higher, and the collection efficiency of the low specific resistance material of the processing device is higher. In the present invention, the above-mentioned treatment method can be used as a new method for de-whitening and defogging of the chimney. The processing device of the present invention can be added to the wet electric precipitator.

In an embodiment of the present invention, a method for processing a material with low specific resistance is provided, which includes the following steps:

Make the low specific resistance material flow through the conductive electrode;

When the low specific resistance material flows through the conductive electrode, the conductive electrode charges the low specific resistance material, and the adsorption electrode exerts an attractive force on the charged low specific resistance material, causing the low specific resistance material to move to the adsorption electrode until the low specific resistance material adheres to it. The adsorption is extremely high.

In an embodiment of the present invention, the step of flowing the low specific resistance material through the conductive electrode includes: electrons are transferred between the low specific resistance material located between the conductive electrode and the adsorption electrode, so that more low specific resistance materials are charged. .

In an embodiment of the present invention, electrons are conducted between the conductive electrode and the adsorbing electrode through a material with low specific resistance, and a current is formed.

In an embodiment of the present invention, the step of flowing the low-resistance material through the conductive electrode includes: the conductive electrode charges the low-resistance material by contacting the low-resistance material.

In one embodiment of the present invention, the low-resistance substances attached to the adsorption electrode are gathered together.

In an embodiment of the present invention, the gas with nitric acid mist flows through the conductive electrode; when the gas with nitric acid mist flows through the conductive electrode, the conductive electrode charges the nitric acid mist in the gas, and the adsorption electrode exerts attractive force on the charged nitric acid mist , Make the nitric acid mist move to the adsorption pole until the nitric acid mist adheres to the adsorption pole.

In an embodiment of the present invention, the step of introducing electrons into the nitric acid mist by the conductive electrode includes: electrons are transferred between the mist droplets located between the conductive electrode and the adsorption electrode, so that more mist droplets are charged.

In an embodiment of the present invention, electrons are conducted between the conductive electrode and the adsorption electrode through the nitric acid mist, and a current is formed.

In an embodiment of the present invention, the step of introducing electrons into the nitric acid mist by the conductive electrode includes: charging the nitric acid mist by contacting the conductive electrode with the nitric acid mist.

In the above-mentioned embodiment of the present invention, it further includes a housing, the inlet and the outlet are both provided on the housing, the conductive electrode and the adsorption electrode are both installed in the housing, and the flow channel is located in the housing at the inlet and the outlet. between.

Attracting the charged low specific resistance material with an adsorption electrode, so that the charged low specific resistance material moves to the adsorption electrode;

The conductive electrode is provided with at least one through hole, and when the low specific resistance material passes through the through hole on the conductive electrode, the low specific resistance material passes through the conductive electrode to make the low specific resistance material charged.

In the above-mentioned embodiment of the present invention, the step of conducting electrons to the low-resistance material with the conductive electrode includes: allowing the electrons to proceed between the low-resistance material located between the conductive electrode and the adsorption electrode. Transfer to charge more low specific resistance materials.

In the above-mentioned embodiment of the present invention, the conductive electrode and the adsorption electrode conduct electrons through a material with low specific resistance and form a current, which is the discharge current of the conductive electrode.

In the above embodiment of the present invention, the step of conducting electrons to the low specific resistance material with the conductive electrode includes: the conductive electrode charges the low specific resistance material by contacting the low specific resistance material.

In an embodiment of the present invention, the conductive electrode and the adsorption electrode are both installed in a housing, and the housing has an inlet and an outlet.

In the above-mentioned embodiment of the present invention, the casing further includes a flow passage, and the flow passage is located in the casing between the inlet and the outlet.

In the above embodiment of the present invention, the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%.

According to an embodiment of the present invention, a low-resistance material processing device is provided, including:

Adsorption electrode, which can exert attractive force on charged low specific resistance material;

At least one through hole is provided on the conductive electrode.

In the above embodiment of the present invention, when the low specific resistance material passes through the through hole on the conductive electrode, the low specific resistance material passes through the conductive electrode to charge the low specific resistance material.

In the above-mentioned embodiment of the present invention, a housing with an inlet and an outlet is further included, and the conductive electrode and the adsorption electrode are both installed in the housing.

The low specific resistance material enters the flow channel from the inlet and moves toward the outlet direction; the conductive electrode is used to conduct electrons to the low specific resistance material to charge the low specific resistance material;

The ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%.

In the above-mentioned embodiment of the present invention, the step of conducting electrons to the low specific resistance material with the conductive electrode includes: electrons are transferred between the low specific resistance material located between the conductive electrode and the adsorption electrode , So that more low specific resistance materials are charged.

In the foregoing embodiment of the present invention, the conductive electrode and the adsorption electrode are both installed in a housing, and the housing has an inlet and an outlet.

In the above embodiment of the present invention, the flow channel is located in the housing between the inlet and the outlet.

Including the inlet, the outlet, and the flow path between the inlet and the outlet;

The conductive electrode, located in the flow channel, can conduct electrons to the low specific resistance material; when the electrons are conducted to the low specific resistance material, the low specific resistance material is charged;

The adsorption pole, located in the flow channel, can exert an attractive force on the charged low specific resistance material;

In some embodiments of the present invention, the conductive electrode is used to conduct electrons to the low specific resistance material. "Conduction" means that when the guide electrode is in contact with the uncharged low specific resistance material, the electrons on the conductive electrode are transferred to the low specific resistance material. , The low specific resistance material is charged with the same charge as the conductive electrode, and the charged low specific resistance material transfers the charge to other uncharged low specific resistance materials, so that more low specific resistance materials are charged.

The following specific examples illustrate the implementation of the present invention. Those familiar with the technology can easily understand the other advantages and effects of the present invention from the content disclosed in this specification.

It should be noted that the structure, ratio, size, etc. shown in the drawings of this specification are only used to match the content disclosed in the specification for the understanding and reading of those who are familiar with this technology, and are not used to limit the implementation of the present invention. Therefore, it does not have any technical significance. Any structural modification, proportional relationship change or size adjustment should still fall within the disclosure of the present invention without affecting the effects and objectives that the present invention can produce. The technical content can cover the scope. At the same time, terms such as "upper", "lower", "left", "right", "middle" and "one" cited in this specification are only for convenience of description and are not intended to limit the scope of the present invention. The scope of implementation, the change or adjustment of the relative relationship, shall also be regarded as the scope of implementation of the present invention without substantial changes to the technical content.

The first embodiment

As shown in Figures 1 to 3, this embodiment provides a low-resistance substance processing device, including:

The conductive electrode 301 can conduct electrons to the low specific resistance material; when the electrons are conducted to the low specific resistance material, the low specific resistance material is charged;

The adsorption electrode 302 can apply an attractive force to the charged low specific resistance material.

At the same time, as shown in FIG. 1, the low specific resistance material processing device in this embodiment further includes a housing 303 having an inlet 3031 and an outlet 3032, and the conductive electrode 301 and the adsorption electrode 302 are both installed in the housing 303. In addition, the conductive electrode 301 is fixed to the inner wall of the housing 303 through the insulating member 304, and the adsorption electrode 302 is directly fixed to the housing 303. In this embodiment, the insulating member 304 has a column shape, which is also called an insulating column. In another embodiment, the insulating member 304 may also be tower-shaped. The insulator 304 is mainly to prevent pollution and leakage. In this embodiment, the conductive electrode 301 and the adsorption electrode 302 are both mesh-shaped (that is, a plurality of through holes are provided on the conductive electrode and the adsorption electrode), and both are between the inlet 3031 and the outlet 3032. The conductive electrode 301 has a negative potential, and the adsorption electrode 302 has a positive potential. At the same time, in this embodiment, the housing 303 and the adsorption electrode 302 have the same electric potential, and the housing 303 also has an adsorption effect on charged substances. In this embodiment, the casing is provided with a flow channel 3036, the conductive electrode 301 and the adsorption electrode 302 are both installed in the flow channel 3036, and the cross-sectional area ratio of the conductive electrode 301 to the cross-sectional area of the flow channel 3036 is 70%.

This embodiment also provides a low-resistance substance treatment method for treating industrial exhaust gas containing acid mist (in this embodiment, the industrial exhaust gas is engine exhaust), including the following steps: Conducting electrons to the industrial exhaust gas by a conductive electrode 301 The acid mist is charged; the adsorption electrode 302 is used to attract the charged acid mist, and the charged acid mist is moved to the adsorption electrode 302. Specifically, in this embodiment, the inlet 3031 is connected to the port for discharging industrial exhaust gas. As shown in Figure 1, the working process and working principle are as follows: Industrial exhaust gas flows into the housing 303 from the inlet 3031 and flows out through the outlet 3032; in the process , The industrial exhaust gas will flow through the conductive electrode 301. When the acid mist in the industrial exhaust gas is in contact with the conductive electrode 301 or the distance between the conductive electrode 301 and the conductive electrode 301 reaches a certain value, the conductive electrode 301 transfers electrons to the acid mist, and the acid mist is charged. The adsorption electrode 302 exerts an attractive force on the charged acid mist, and the acid mist moves to the adsorption electrode 302 and adheres to the adsorption electrode 302; because the acid mist has the characteristics of being easy to carry and easy to lose electricity, a certain charged mist drops on the adsorption electrode 302 will lose electricity again during the moving process. At this time, other charged droplets will quickly transfer electrons to the lost droplets. Repeat this way, the droplets are in a continuously charged state, and the adsorption electrode 302 can continue to apply to the droplets. Adsorption force, and make the mist droplets adhere to the adsorption electrode 302, so as to achieve the removal of acid mist in the industrial exhaust gas, avoid the direct discharge of acid mist into the atmosphere and cause pollution to the atmosphere.

The processing method and parameters in the processing device provided in this embodiment are shown in Table 1:

Table 1

11	导电极和吸附极之间的电压即上电驱动电压The voltage between the conductive electrode and the adsorption electrode is the power-on driving voltage	12KV12KV
22	导电极放电电流Lead discharge current	0.01A0.01A
33	起始起晕电压Initial corona voltage	5.5KV5.5KV
44	导电极的截面面积与流道的截面面积比The ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the runner	70％70%
55	导电极与吸附极之间的间距The distance between the conductive electrode and the adsorption electrode	10mm10mm

In this embodiment, the conductive electrode 301 and the adsorption electrode 302 constitute an adsorption unit. In addition, when there is only one adsorption unit, the low specific resistance material processing device and processing method in this embodiment can remove 80% of the acid mist in the industrial exhaust gas, greatly reducing the discharge of acid mist, and having a significant environmental protection effect.

As shown in FIG. 2, in this embodiment, the conductive electrode 301 is provided with three first connection portions 3011, and the three first connection portions 3011 are respectively connected to the three second connections on the inner wall of the housing 303 through three insulators 304. This connection form can effectively enhance the connection strength between the conductive electrode 301 and the housing 303. In this embodiment, the first connecting portion 3011 has a cylindrical shape. In other embodiments, the first connecting portion 3011 may also have a tower shape or the like. In this embodiment, the insulating member 304 is cylindrical, and in other embodiments, the insulating member 304 may also be tower-shaped. In this embodiment, the second connecting portion is cylindrical, in other embodiments the insulating member 304 may also be tower-shaped. As shown in FIG. 1, the housing 303 in this embodiment includes a first barrel portion 3033, a second barrel portion 3034, and a third barrel portion 3035 that are sequentially distributed from the inlet 3031 to the outlet 3032. The inlet 3031 is located at one end of the first barrel portion 3033, and the outlet 3032 is located at one end of the third barrel portion 3035. The outline size of the first barrel portion 3033 gradually increases from the inlet 3031 to the outlet 3032, and the outline size of the third barrel portion 3035 gradually decreases from the inlet 3031 to the outlet 3032. The cross section of the second barrel 3034 in this embodiment is rectangular. In this embodiment, the housing 303 adopts the above-mentioned structural design, so that the exhaust gas reaches a certain inlet flow rate at the inlet 3031, and more importantly, it can make the airflow distribution more uniform, so that the medium in the exhaust gas, such as mist droplets, is more easily excited on the conductive electrode 301 Charged under action. At the same time, the casing 303 is more convenient to encapsulate, reduces the amount of material, and saves space, can be connected by pipes, and is also used for insulation considerations. Any shell 303 that can achieve the above effects is acceptable.

In this embodiment, the inlet 3031 and the outlet 3032 are both circular. The inlet 3031 may also be called an air inlet, and the outlet 3032 may also be called an air outlet. In this embodiment, the diameter of the inlet 3031 is 300mm-1000mm, specifically 500mm. At the same time, the diameter of the outlet 3032 in this embodiment is 300mm-1000mm, specifically 500mm.

The second embodiment

As shown in Figures 4 and 5, this embodiment provides a low-resistance material processing device, including:

As shown in FIGS. 4 and 5, there are two conductive electrodes 301 in this embodiment, and the two conductive electrodes 301 are both mesh-shaped and spherical. In this embodiment, there is one adsorption electrode 302, and the adsorption electrode 302 has a net shape and a spherical cage shape. The adsorption electrode 302 is located between the two conductive electrodes 301. At the same time, as shown in FIG. 4, the low specific resistance material processing device in this embodiment further includes a housing 303 having an inlet 3031 and an outlet 3032, and the conductive electrode 301 and the adsorption electrode 302 are both installed in the housing 303. In addition, the conductive electrode 301 is fixed to the inner wall of the housing 303 through the insulating member 304, and the adsorption electrode 302 is directly fixed to the housing 303. In this embodiment, the insulating member 304 has a column shape, which is also called an insulating column. In this embodiment, the conductive electrode 301 has a negative potential, and the adsorption electrode 302 has a positive potential. At the same time, in this embodiment, the housing 303 and the adsorption electrode 302 have the same electric potential, and the housing 303 also has an adsorption effect on charged substances.

This embodiment also provides a processing method using the above-mentioned low-resistance substance processing device for processing industrial exhaust gas containing acid mist, including the following steps: using a conductive electrode 301 to conduct electrons to the acid mist in the industrial exhaust gas to charge the acid mist ; Use the adsorption electrode 302 to attract the charged acid mist, so that the charged acid mist moves to the adsorption electrode 302. Specifically, in this embodiment, the inlet 3031 is connected to the port for discharging industrial exhaust gas. As shown in Figure 4, the working process and working principle are as follows: the industrial exhaust gas flows into the housing 303 from the inlet 3031 and flows out through the outlet 3032; in this process , The industrial exhaust gas will flow through one of the conductive electrodes 301 first. When the acid mist in the industrial exhaust gas comes into contact with the conductive electrode 301 or the distance between the conductive electrode 301 and the conductive electrode 301 reaches a certain value, the conductive electrode 301 transfers electrons to the acid mist , Part of the acid mist is charged, and the adsorption pole 302 exerts an attractive force on the charged acid mist, and the acid mist moves to the adsorption pole 302 and adheres to the adsorption pole 302; another part of the acid mist is not adsorbed on the adsorption pole 302, this part The acid mist continues to flow toward the outlet 3032. When this part of the acid mist comes into contact with another conductive electrode 301 or the distance from another conductive electrode 301 reaches a certain value, this part of the acid mist will be charged, and the housing 303 will charge this part The acid mist exerts the adsorption force to make this part of the charged acid mist adhere to the inner wall of the housing 303, thereby greatly reducing the discharge of acid mist in the industrial exhaust gas, and the processing device and method in this embodiment can remove the industrial exhaust gas With 90% acid mist, the effect of removing acid mist is very significant. In addition, the inlet 3031 and the outlet 3032 in this embodiment are both circular, the inlet 3031 may also be called an air inlet, and the outlet 3032 may also be called an air port.

The processing method and parameters in the processing device provided in this embodiment are shown in Table 2:

Table 2

11	导电极和吸附极之间的电压即上电驱动电压The voltage between the conductive electrode and the adsorption electrode is the power-on driving voltage	5KV5KV
22	导电极放电电流Lead discharge current	0.005A0.005A
33	起始起晕电压Initial corona voltage	5.5KV5.5KV
44	导电极的截面面积与流道的截面面积比The ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the runner	75％75%
55	导电极与吸附极之间的间距The distance between the conductive electrode and the adsorption electrode	10mm10mm

The third embodiment

This embodiment provides a low specific resistance material processing device, including:

In this embodiment, the conductive electrode is in a mesh shape, and the conductive electrode has a negative potential. At the same time, the adsorption electrode in this embodiment is planar, and the adsorption electrode has a positive potential, and the adsorption electrode is also called a collector. In this embodiment, the adsorption electrode is specifically planar, and the conductive electrode is parallel to the adsorption electrode. In this embodiment, a mesh electric field is formed between the conductive electrode and the adsorption electrode. In addition, in this embodiment, the conductive electrode is a mesh structure made of metal wire, and the conductive electrode is composed of a metal wire mesh. The area of the adsorption electrode in this embodiment is larger than the area of the conductive electrode.

Fourth embodiment

In this embodiment, the conductive electrode is in a mesh shape, and the conductive electrode has a negative potential. At the same time, the adsorption electrode in this embodiment is barrel-shaped, and the adsorption electrode has a positive potential, and the adsorption electrode is also called a collector. In this embodiment, the conductive electrode is fixed by a metal wire or a metal needle. In this embodiment, the conductive electrode is located at the geometric symmetry center of the barrel-shaped adsorption electrode. In this embodiment, a net barrel electric field is formed between the conductive electrode and the adsorption electrode.

Fifth embodiment

In this embodiment, there are two adsorption electrodes, and the conductive electrode is located between the two adsorption electrodes. The length of the conductive electrode in the left-right direction is greater than the length of the adsorption electrode in the left-right direction. The left end of the conductive electrode is located on the left of the adsorption electrode. square. The left end of the conductive electrode and the left end of the suction electrode form a line of electric force extending in an oblique direction. In this embodiment, an asymmetric electric field is formed between the conductive electrode and the adsorption electrode. When in use, substances with low specific resistance, such as mist droplets, enter between the two adsorption poles from the left. After part of the fog droplets are charged, the left end of the conductive electrode moves diagonally to the left end of the adsorption electrode, thereby pulling the fog droplets.

Sixth embodiment

In this embodiment, the conductive electrode and the adsorption electrode constitute an adsorption unit. In this embodiment, there are multiple adsorption units, and all the adsorption units are distributed along the lateral direction. In this embodiment, all the adsorption units are specifically distributed along the left and right directions.

Seventh embodiment

In this embodiment, the conductive electrode and the adsorption electrode constitute an adsorption unit. In this embodiment, there are multiple adsorption units, and all adsorption units are distributed along the longitudinal direction.

Eighth embodiment

In this embodiment, the conductive electrode and the adsorption electrode constitute an adsorption unit. In this embodiment, there are multiple adsorption units, and all adsorption units are distributed in an oblique direction.

Ninth embodiment

In this embodiment, the conductive electrode and the adsorption electrode constitute an adsorption unit. In this embodiment, there are multiple adsorption units, and all adsorption units are distributed along the spiral direction.

Tenth embodiment

In this embodiment, the conductive electrode and the adsorption electrode constitute an adsorption unit. In this embodiment, there are multiple adsorption units, and all the adsorption units are distributed in the horizontal, vertical and diagonal directions.

Eleventh embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low specific resistance material processing device and a Venturi plate. In this embodiment, the low specific resistance material processing device is used in combination with the venturi plate.

Twelfth embodiment

This embodiment provides an engine-based gas treatment system, which includes the above-mentioned low specific resistance substance treatment device, a Venturi plate, a NOx oxidation catalyst device, and an ozone decomposing device. In this embodiment, the low specific resistance material processing device and the Venturi plate are located between the NOx oxidation catalytic device and the ozone digestion device. In addition, the NOx oxidation catalytic device has a NOx oxidation catalyst, and the ozone decomposition device has an ozone decomposition catalyst.

Thirteenth embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low specific resistance substance processing device, corona device and venturi plate, wherein the low specific resistance substance processing device is located between the corona device and the venturi plate.

Fourteenth embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low specific resistance substance processing device, a heating device, and an ozone digestion device, wherein the heating device is located between the low specific resistance substance processing device and the ozone digestion device.

Fifteenth embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low specific resistance substance processing device, a centrifugal device and a venturi plate, wherein the low specific resistance substance processing device is located between the centrifugal device and the venturi plate.

Sixteenth embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low-resistance substance processing device, corona device, venturi plate, and molecular sieve. The Chinese slab and low-resistance substance processing device are located in the corona device and molecular sieve. between.

Seventeenth embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low specific resistance substance processing device, corona device and electromagnetic device, wherein the low specific resistance substance processing device is located between the corona device and the electromagnetic device.

Eighteenth embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low specific resistance substance processing device, corona device, and irradiation device, wherein the irradiation device is located between the corona device and the low specific resistance substance processing device.

Nineteenth embodiment

This embodiment provides an engine-based gas processing system, including the above-mentioned low-resistance material processing device, corona device, and wet electric dust removal device, wherein the wet electric dust removing device is located between the corona device and the low specific resistance material processing device.

Twentieth embodiment

As shown in FIG. 6, this embodiment provides an engine-based gas processing system, including an air intake device. FIG. 1 is a schematic structural diagram of the air intake device. The air intake device 101 includes an air inlet 1011, a separation mechanism 1012, a first water filtering mechanism 1013, an electrostatic dust removal mechanism 1014, an insulation mechanism 1015, an air equalization mechanism, a second water filtering mechanism 1017 and/or an ozone mechanism 1018. In this embodiment, the first water filtering mechanism 1013 is a low specific resistance material processing device provided by the present invention.

As shown in FIG. 6, the air inlet 1011 is provided on the air inlet wall of the separation mechanism 1012 to receive gas with particulate matter.

The electrostatic precipitating mechanism 1014 includes an anode dust accumulating part 10141 and a first cathode discharging part 10142 arranged in the anode dust accumulating part 10141. An asymmetric electrostatic field is formed between the anode dust accumulating part 10141 and the cathode discharging part 10142.

The first water filter mechanism 1013 arranged in the separation mechanism 1012 includes a conductive electrode and a conductive mesh plate arranged in the air inlet 1011, and the conductive mesh plate is used to conduct electrons to the low ratio after being powered on. Resistance substance. The adsorption electrode for adsorbing the charged low-resistance material is the anode dust collecting part 10141 of the electrostatic dust removal mechanism 1014 in this embodiment.

Please refer to FIG. 7, which shows a schematic structural diagram of another embodiment of the first water filter mechanism disposed in the air intake device. The conductive electrode 10131 of the first water filter mechanism is disposed at the air inlet, and the conductive electrode 10131 is a conductive mesh plate with a negative potential. At the same time, the adsorption electrode 10132 is arranged in the air intake device in a surface mesh shape, and the adsorption electrode 10132 has a positive potential. The adsorption electrode 10132 is also called a collector. In this embodiment, the adsorption electrode 10132 has a planar mesh shape, and the conductive electrode 10131 is parallel to the adsorption electrode 10132. In this embodiment, a mesh electric field is formed between the conductive electrode 10131 and the adsorption electrode 10132. In addition, the conductive electrode 10131 is a mesh structure made of metal wire, and the conductive electrode 10131 is formed of a metal wire mesh. The area of the adsorption electrode 10132 is larger than the area of the conductive electrode 10131.

The engine-based gas treatment system also includes an exhaust gas treatment device. The exhaust gas treatment device includes a third water filter mechanism. In this embodiment, the first water filter mechanism is also applicable to the third filter of the exhaust gas treatment device of the engine-based gas treatment system. Water agency.

Twenty-first embodiment

A diesel engine exhaust gas treatment system, as shown in Figure 8, includes:

Nitrogen oxide (NO _x ) removal device for removing nitrogen oxides (NO _x ) from diesel engine exhaust; the nitrogen oxide removal (NO _x ) device includes: an ozone source such as ozone generator 201 for providing ozone; reaction field 202, for a diesel engine exhaust with ozone reaction mixture; denitration apparatus 203, for removing the diesel engine exhaust gas by denitrification after oxide (NO _x) in the processing apparatus nitrate; 203 comprising a denitrator The electrocoagulation defogging unit 2031 is a low-resistance substance processing device, used to electrocoagulate the engine exhaust after ozone treatment, and the water mist containing nitric acid is deposited on the adsorption electrode in the low-resistance substance processing device. The denitrification device 203 also includes a denitrification liquid collection unit 2032 for storing the nitric acid aqueous solution and/or nitrate aqueous solution removed from the exhaust gas; an ozone digester 204 for digesting ozone in the exhaust gas of the diesel engine after the denitration device . The ozone digester can digest ozone by ultraviolet, catalysis and other methods.

In this embodiment, the low specific resistance material processing device, that is, the electrocoagulation defogging unit 2031 includes: a conductive electrode 301, which can conduct electrons to the low specific resistance material; when the electrons are conducted to the low specific resistance material, the low specific resistance The substance is charged; the adsorption pole 302 can exert attractive force on the charged low specific resistance substance.

In this embodiment, there are two conductive electrodes 301, and the two conductive electrodes 301 are both mesh-shaped and spherical. In this embodiment, there is one adsorption electrode 302, and the adsorption electrode 302 has a net shape and a spherical cage shape. The adsorption electrode 302 is located between the two conductive electrodes 301. At the same time, as shown in FIG. 4, the low specific resistance material processing device in this embodiment further includes a housing 303 with an inlet 3031 and an outlet 3032. The conductive electrode 301 and the adsorption electrode 302 are both installed in the housing 303. In addition, the conductive electrode 301 is fixed to the inner wall of the outer shell 303 through the insulating member 304, and the adsorption electrode 302 is directly fixed to the outer shell 303. In this embodiment, the insulating member 304 has a column shape, which is also called an insulating column. In this embodiment, the conductive electrode 301 has a negative potential, and the adsorption electrode 302 has a positive potential. At the same time, in this embodiment, the housing 303 and the adsorption electrode 302 have the same electric potential, and the housing 303 also has an adsorption effect on charged substances.

This embodiment also provides a processing method using the above-mentioned low-resistance substance processing device for processing industrial exhaust gas containing acid mist, including the following steps: using a conductive electrode 301 to conduct electrons to the acid mist in the industrial exhaust gas to charge the acid mist ; Use the adsorption electrode 302 to attract the charged acid mist, so that the charged acid mist moves to the adsorption electrode 302. Specifically, in this embodiment, the inlet 3031 is connected to the port for discharging industrial exhaust gas. The working process and working principle are as follows: the industrial exhaust gas flows into the housing 303 from the inlet 3031 and flows out through the outlet 3032; in this process, the industrial exhaust gas will flow first Via one of the conductive electrodes 301, when the acid mist in the industrial exhaust gas comes into contact with the conductive electrode 301 or the distance from the conductive electrode 301 reaches a certain value, the conductive electrode 301 transfers electrons to the acid mist, and part of the acid mist is charged. The adsorption pole 302 exerts an attraction force on the charged acid mist, and the acid mist moves to the adsorption pole 302 and adheres to the adsorption pole 302; another part of the acid mist is not adsorbed on the adsorption pole 302, and this part of the acid mist continues to the outlet 3032 When the part of the acid mist is in contact with another conductive electrode 301, or when the distance from the other conductive electrode 301 reaches a certain value, the part of the acid mist will be charged, and the housing 303 will apply adsorption force to the part of the charged acid mist , So that this part of the charged acid mist is attached to the inner wall of the housing 303, thereby greatly reducing the discharge of acid mist in the industrial exhaust gas, and the processing device and method in this embodiment can remove 90% of the acid mist in the industrial exhaust gas. The effect of removing acid mist is very significant. In addition, the inlet 3031 and the outlet 3032 in this embodiment are both circular, the inlet 3031 may also be called an air inlet, and the outlet 3032 may also be called an air port.

The processing method and parameters in the processing device provided in this embodiment are shown in Table 3:

table 3

11	导电极和吸附极之间的电压即上电驱动电压The voltage between the conductive electrode and the adsorption electrode is the power-on driving voltage	12KV12KV
22	导电极放电电流Lead discharge current	0.018A0.018A
33	起始起晕电压Initial corona voltage	6.5KV6.5KV
44	导电极的截面面积与流道的截面面积比The ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the runner	90％90%
55	导电极与吸附极之间的间距The distance between the conductive electrode and the adsorption electrode	10mm10mm

In summary, the present invention effectively overcomes various shortcomings in the prior art and has high industrial value.

The above-mentioned embodiments only exemplarily illustrate the principles and effects of the present invention, and are not used to limit the present invention. Anyone familiar with this technology can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims

A method for processing low-resistance substances, including the following steps:

Conducting electrons to the low specific resistance material with a conductive electrode to charge the low specific resistance material;

Attracting the charged low specific resistance material with an adsorption electrode, so that the charged low specific resistance material moves to the adsorption electrode;

The conductive electrode is provided with at least one through hole, and when the low specific resistance material passes through the through hole on the conductive electrode, the low specific resistance material is charged.
The method for processing a low-resistance material according to claim 1, wherein the step of conducting electrons to the low-resistance material with a conductive electrode comprises: making electrons located between the conductive electrode and the adsorption electrode Transfer between the low specific resistance materials between, so that more low specific resistance materials are charged.
The method for processing a material with a low specific resistance according to claim 1 or 2, wherein the conductive electrode and the adsorption electrode conduct electrons through the material with low specific resistance and form a current.
The method for processing a material with low specific resistance according to any one of claims 1-3, wherein the step of conducting electrons to the material with low specific resistance with a conductive electrode includes: The way the substance comes into contact charges the substance with low specific resistance.
The method for processing a material with low specific resistance according to any one of claims 1 to 4, wherein the conductive electrode and the adsorption electrode are both installed in a housing, and the housing has an inlet and an outlet.
The method for processing a material with low specific resistance according to any one of claims 1-5, wherein the housing further comprises a flow channel, and the flow channel is located in the housing between the inlet and the outlet.
The method for processing a material with low specific resistance according to any one of claims 1-6, wherein the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%.
A low specific resistance material processing device, including:

The conductive electrode can conduct electrons to the low specific resistance material; when the electrons are conducted to the low specific resistance material, the low specific resistance material is charged;

Adsorption electrode, which can exert attractive force on charged low specific resistance material;

At least one through hole is provided on the conductive electrode.
8. The low specific resistance material processing device according to claim 8, wherein when the low specific resistance material passes through the through hole on the conductive electrode, the low specific resistance material is charged.
The low specific resistance material processing device according to claim 8 or 9, further comprising a housing with an inlet and an outlet, and the conductive electrode and the adsorption electrode are both installed in the housing.
The low-resistance material processing device according to any one of claims 8-10, wherein the housing further comprises a flow channel, and the flow channel is located in the housing between the inlet and the outlet .
The device for processing a material with low specific resistance according to any one of claims 8-11, wherein the ratio of the cross-sectional area of the conductive electrode to the cross-sectional area of the flow channel is 99%-10%.