WO2020184773A1 - Plaque de dissipation de chaleur - Google Patents

Plaque de dissipation de chaleur Download PDF

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Publication number
WO2020184773A1
WO2020184773A1 PCT/KR2019/003857 KR2019003857W WO2020184773A1 WO 2020184773 A1 WO2020184773 A1 WO 2020184773A1 KR 2019003857 W KR2019003857 W KR 2019003857W WO 2020184773 A1 WO2020184773 A1 WO 2020184773A1
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WO
WIPO (PCT)
Prior art keywords
layer
copper
heat sink
sink material
molybdenum
Prior art date
Application number
PCT/KR2019/003857
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English (en)
Korean (ko)
Inventor
조명환
김일호
이석우
김영석
Original Assignee
주식회사 더굿시스템
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Publication of WO2020184773A1 publication Critical patent/WO2020184773A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Definitions

  • the present invention relates to a heat sink material, and more particularly, as a heat sink material that can be suitably used for packaging of high-power devices, even if it is bonded to a device containing a ceramic material such as alumina (Al 2 O 3 ), good bonding is possible.
  • a heat sink that has a coefficient of thermal expansion similar to that of ceramic materials, and at the same time exhibits high thermal conductivity that can quickly discharge a large amount of heat generated from a high-power device to the outside, and has excellent bonding strength between each layer forming a laminated structure. It is about ashes.
  • a high-power amplifying device using a GaN-based compound semiconductor is attracting attention as a core technology in the field of information communication and defense.
  • high-power semiconductor devices using GaN-based compound semiconductors include two-layer composite materials of tungsten (W)/copper (Cu), two-phase composite materials of copper (Cu) and molybdenum (Mo), and copper (Cu).
  • W tungsten
  • Cu copper
  • Mo molybdenum
  • Cu copper
  • Cu-Mo Copper-molybdenum
  • Cu-Mo copper-molybdenum alloy
  • Cu copper-molybdenum alloy
  • Cu copper-Mo alloy
  • Cu copper
  • a brazing bonding process with a ceramic material such as alumina (Al 2 O 3 ) is essential.
  • a heat sink material consisting of an intermediate layer (second layer, fourth layer) and a core layer having a structure in which a copper (Cu) layer and a molybdenum (Mo) layer are alternately repeated along a direction parallel to the top and bottom of the heat sink material.
  • the heat dissipation plate material of this structure is the same or similar to the thermal expansion coefficient of the ceramic material and exhibits excellent thermal conductivity of 400 W/mK or more, but there is a problem in that the number of manufacturing processes and process cost increase due to a complex structure.
  • the interlayer bonding strength is excellent, exhibits excellent thermal conductivity in the thickness direction, and at the same time, the thermal expansion coefficient similar to that of the ceramic material in the plane direction perpendicular to the thickness direction Development of a heat sink material that can be implemented is required.
  • the subject of the present invention is a heat sink material having a laminated structure, with excellent thermal conductivity of 300W/mK or more in the thickness direction, and a coefficient of thermal expansion of 7 ⁇ 10 -6 /K to 12 ⁇ 10 -6 /K in a plane direction perpendicular to the thickness direction. It is to provide a heat dissipating plate material that can implement and exhibit excellent bonding strength between each layer constituting the laminated structure.
  • the present invention provides a first layer made of copper (Cu) or a copper (Cu) alloy, and is formed on the first layer, and is formed on the first layer, molybdenum (Mo), or molybdenum (Mo), tungsten (W ), chromium (Cr), titanium (Ti), beryllium (Be), and a second layer made of an alloy containing copper (Cu) and at least one component selected from, and formed on the second layer, and copper (Cu ) Or a third layer made of a copper (Cu) alloy, and formed on the third layer, molybdenum (Mo), or molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti), and beryllium A fourth layer made of an alloy containing at least one component selected from (Be) and copper (Cu), and a fifth layer formed on the fourth layer and made of copper (Cu) or copper (Cu) alloy. And a cobalt (Co) diffusion layer formed at an
  • the heat sink material according to an embodiment of the present invention is selected from a copper (Cu) layer, a molybdenum (Mo) layer or molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti), and beryllium (Be).
  • Cu copper
  • Mo molybdenum
  • Mo molybdenum
  • Mo molybdenum
  • W tungsten
  • Cr chromium
  • Ti titanium
  • Be beryllium
  • the heat sink material according to an embodiment of the present invention has excellent thermal conductivity of 300 W/mK or more (more preferably 350 W/mK or more) in the thickness direction, which was difficult to implement with a conventional five-layer stacked structure. Since it can implement the coefficient of thermal expansion in the plane direction in the range of -6 /K, it can be suitably used for packaging of high-power electronic devices or optical devices that generate more heat than general devices.
  • the heat sink material according to an embodiment of the present invention does not have a complex structure such as a vertically erected lattice structure but has a simple stacked structure, the process is simple and manufacturing is easy.
  • 1 is a view for explaining a thickness direction and a surface direction of a heat sink material.
  • FIG. 2 is a view showing a laminated structure of a heat sink material according to an embodiment of the present invention.
  • FIG. 3 shows the results of EDS (Energy Dispersive X-ray Spectrometer) analysis of the interface of the heat sink material manufactured according to an embodiment of the present invention.
  • the heat dissipation plate material according to the present invention includes a first layer made of copper (Cu) or a copper (Cu) alloy, and is formed on the first layer, and includes molybdenum (Mo), or molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti), and a second layer made of an alloy containing at least one component selected from beryllium (Be) and copper (Cu), and formed on the second layer, copper (Cu) or copper
  • a fifth layer formed on the fourth layer and made of copper (Cu) or copper (Cu) alloy A cobalt (Co) diffusion layer is formed at an interface between the first layer
  • the'thickness direction' means a direction perpendicular to the surface of the heat dissipating plate material, as shown in FIG. 1, and the'face direction' means a direction parallel to the surface of the plate material.
  • the term'cobalt (Co) diffusion layer' refers to a first layer, a third layer, and a fifth layer made of copper (Cu) or a copper (Cu) alloy by diffusion of a cobalt (Co) element from the interface, and molybdenum ( Mo), or molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti) and beryllium (Be), a second layer and a second layer made of an alloy containing copper (Cu) and at least one component selected from
  • the cobalt (Co) is substantially higher at an analytical level compared to the cobalt (Co) content contained in the material constituting each layer because it is dissolved in the four layers of the base or exists in the form of a compound with the material constituting the base. It refers to the area representing the concentration.
  • the heat sink material according to the present invention comprises a five-layer structure of a copper (Cu) layer/molybdenum (Mo) layer or an alloy layer/copper (Cu) layer/molybdenum (Mo) layer or an alloy layer/copper (Cu) layer.
  • Cu copper
  • Mo molybdenum
  • Cu molybdenum
  • a cobalt (Co) diffusion layer having a predetermined thickness is formed at the interface between the first layer, the third layer, and the fifth layer, and the second and fourth layers disposed therebetween, which will significantly improve the bonding strength between each layer. I can.
  • the first layer, the third layer, and the fifth layer may be made of a copper (Cu) alloy containing 99% by weight or more of copper (Cu), as well as a copper (Cu) alloy containing various alloying elements.
  • copper (Cu) may be included in an amount of 80% by weight or more, preferably 90% by weight or more, and more preferably 95% by weight or more.
  • the second and fourth layers are at least one selected from 5 to 40% by weight of copper (Cu) and the remaining molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti), and beryllium (Be). And, it may be made of an alloy containing inevitable impurities.
  • inevitable impurities mean impurities that are unintentionally included in the manufacturing process of the alloy. In this way, when an alloy containing copper (Cu) is used, it is more preferable because it not only can obtain a low coefficient of thermal expansion while improving the bonding strength with the copper (Cu) layer, but also improve the thermal conductivity in the thickness direction. .
  • the second and fourth layers are made of a molybdenum (Mo)-copper (Cu) alloy containing 60 to 95% by weight of molybdenum (Mo) and 5 to 40% by weight of copper (Cu), cobalt (Co ) Has a very high solubility with molybdenum (Mo) and copper (Cu), so it is advantageous for forming a cobalt (Co) diffusion layer and is more preferable for increasing interlayer bonding strength.
  • the copper (Cu) content is less than 5% by weight, the thermal conductivity in the thickness direction may decrease, and if it is more than 40% by weight, it may be difficult to keep the coefficient of thermal expansion in the plane direction low, so it is preferable to maintain the above range.
  • the content of cobalt (Co) contained in the entire heat sink material is less than 0.5% by weight, it is difficult to sufficiently improve the bonding strength because the diffusion layer is not sufficiently formed, and when the content of cobalt (Co) exceeds 5% by weight, the heat sink material Since it is difficult to adjust the coefficient of thermal expansion or thermal conductivity to a desired level, it is preferable to maintain the range of 0.5 to 5% by weight.
  • the thickness of the cobalt (Co) diffusion layer must be 0.1 ⁇ m or more to obtain an effect of improving the bonding strength more than a certain level, and a large amount of cobalt (Co) or process time is required to form it to exceed 100 ⁇ m, but there is not much effect of improving additional bonding strength. It is preferably 100 ⁇ m or less. A more preferable thickness of the cobalt (Co) diffusion layer is 1 to 50 ⁇ m.
  • cobalt (Co) diffusion layer there may be a cobalt (Co) layer in which cobalt (Co) exists as a single phase, and the cobalt (Co) single phase remains in a state in which the cobalt (Co) component is not completely diffused during the manufacturing process. It is a layer that does.
  • the cobalt (Co) diffusion layer is preferably formed on both sides of the interface to improve the bonding strength.
  • the thickness of the first, third and fifth layers is maintained in the range of 10 to 1000 ⁇ m
  • the coefficient of thermal expansion in the surface direction of the heat sink material is maintained in the range of 12 ⁇ 10 -6 /K, and the thermal conductivity in the thickness direction is maintained. Since it can be implemented with 300W/mK or more, it is preferable to keep it in the above range.
  • the thickness of the second and fourth layers is less than 10 ⁇ m, it is difficult to maintain the coefficient of thermal expansion in the plane direction in the range of 7 to 12 ⁇ 10 -6 /K, and when the thickness of the second layer and the fourth layer is more than 60 ⁇ m, the thermal conductivity in the thickness direction is 300 W/ Since it is difficult to implement more than mK, it is desirable to maintain it in the range of 10 ⁇ 60 ⁇ m.
  • the coefficient of thermal expansion in the plane direction of the heat sink material is preferably 7 ⁇ 10 -6 /K to 12 ⁇ 10 -6 /K. If it is out of this range, when bonding or using a ceramic element This is because defects are likely to occur due to the difference in the coefficient of thermal expansion.
  • the thermal conductivity in the thickness direction may be 300W/mK or more, and more preferably 350W/mK or more.
  • the coefficient of thermal expansion in the plane direction through the heat sink material having the structure of the present invention is 7 ⁇ 10 -6 /K ⁇ 12 ⁇ 10 -6 /K Since it is difficult to achieve a thermal conductivity of 300W/mK or more in the thickness direction, it is preferable to keep the total thickness within the above range.
  • the coefficient of thermal expansion in the plane direction is 7 ⁇ 10 -6 /K ⁇ 12 ⁇ 10 -6 / It is not easy to implement K, and if it exceeds 15%, since it is not easy to implement thermal conductivity in the thickness direction, it is preferable to maintain the range of 5 to 15%.
  • FIG. 2 is a view showing a laminated structure of a heat sink material according to an embodiment of the present invention.
  • the heat sink material 1 includes a first layer 10 made of copper (Cu), and formed on an upper surface of the first layer 10, and molybdenum (A second layer 20 made of a Mo)-copper (Cu) alloy, a third layer 30 formed on the upper surface of the second layer 20 and made of copper (Cu), and the third layer 30 A fourth layer 40 formed on the upper surface of the molybdenum (Mo)-copper (Cu) alloy, and a fifth layer 50 formed on the upper surface of the fourth layer 40 and formed of copper (Cu) It is made including.
  • a first cobalt diffusion layer 60 (a region indicated by an oblique line in the drawing) is formed at the interface between the first layer 10 and the second layer 20 disposed between the third layer 30 and ,
  • a second cobalt diffusion layer 70 (areas indicated by diagonal lines in the drawing) is formed at the interface with the fourth layer 40 disposed between the third layer 10 and the fifth layer 50. .
  • the first layer 10 and the fifth layer 50 are made of copper (Cu) containing 99% by weight or more of copper (Cu), each having a thickness of about 200 ⁇ m
  • the third layer ( 30) is made of copper (Cu) containing 99% by weight or more of copper (Cu) and has a thickness of about 600 ⁇ m
  • the second layer 20 and the fourth layer 40 are each molybdenum (Mo)- It is made of a copper (Cu) alloy (Mo: 70% by weight, Cu: 30% by weight) and has a thickness of about 50 ⁇ m.
  • the thickness of the first cobalt diffusion layer 60 and the second cobalt diffusion layer 70 is about 1 to 100 ⁇ m, and the thickness of the diffusion layer varies according to process conditions such as a process temperature and a cooling rate.
  • the heat dissipation plate material 1 having the above structure was manufactured through the following process.
  • a copper (Cu) plate having a thickness of about 200 ⁇ m, a length of 100 mm, and a width of 100 mm was prepared as a material for the first layer 10 and the fifth layer 50, and copper having a thickness of about 600 ⁇ m, a length of 100 mm, and a width of 100 mm.
  • a (Cu) plate was prepared as a material for the third layer 30, and a molybdenum (Mo)-copper (Cu) alloy plate (Mo: 70% by weight, Cu: 30% by weight) having a thickness of about 50 ⁇ m, a length of 100 mm, and a width of 100 mm %) was prepared as a material for the second layer 20 and the fourth layer 40.
  • a cobalt (Co) layer is deposited to a thickness of about 500 nm on the surfaces of the first layer 10, the third layer 30, and the fifth layer 50 using a sputtering method.
  • the portion on which the cobalt (Co) layer was formed was laminated to have a structure as shown in FIG. 2 by contacting the second layer 20 and the fourth layer 40, and then bonded by pressure sintering. At this time, the sintering temperature was set to 900°C, and after sintering, it was cooled by cooling in a sintering furnace.
  • the cobalt (Co) layer formed before pressure sintering does not exist in a single phase at the interface between the copper (Cu) layer made of copper (Cu) and the molybdenum (Mo)-copper (Cu) alloy layer. It can be seen that it is in a diffused state.
  • the cobalt (Co) diffusion layer formed as described above may improve the bonding strength between the copper (Cu) layer and the molybdenum (Mo)-copper (Cu) alloy layer.
  • the tester was tested at a constant strain rate (1mm/min) until the interface was fractured using a universal testing machine (AG-300kNX). Interfacial separation did not occur until testing to the maximum load. Through this, it was confirmed that the interlayer bonding strength of the heat sink material manufactured according to the embodiment of the present invention is very excellent.
  • the thickness of the molybdenum (Mo)-copper (Cu) alloy layer which is disadvantageous in thermal conductivity in the heat sink material manufactured according to the present invention, is thin to about 50 ⁇ m, so that the thermal conductivity in the thickness direction can be increased.
  • each plate is prepared and then bonded using a pressure sintering method, but it goes without saying that the laminated structure according to the present invention can be implemented by various methods such as plating and evaporation.
  • Table 1 below shows the results of measuring the coefficient of thermal expansion in the surface direction and the thermal conductivity in the thickness direction of the heat sink material manufactured according to an embodiment of the present invention (average of the results obtained by selecting random 10 locations in the heat sink material). The results of measuring the thermal conductivity and coefficient of thermal expansion of and pure copper plates were compared.
  • the coefficient of thermal expansion of the heat sink material according to the embodiment of the present invention represents a coefficient of thermal expansion of 10.9 ⁇ 10 -6 /K in the plane direction, and this value is an electronic device such as a semiconductor device or an optical device. It is similar to the coefficient of thermal expansion of the ceramic material constituting the device, and thus it is possible to reduce the problem of warping or peeling that occurs when these devices are mounted.
  • the thermal conductivity in the thickness direction of the heat sink material according to the embodiment of the present invention is 350 W/

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne une plaque de dissipation de chaleur qui peut être liée à des éléments formés de matériau céramique pendant le conditionnement de dispositifs électroniques de haute puissance ou de dispositifs optiques qui génèrent de grandes quantités de chaleur, et peuvent conserver une liaison satisfaisante pendant l'utilisation. Cette plaque de dissipation de chaleur est caractérisée en ce qu'elle comprend : une première couche composée de cuivre (Cu) ou d'un alliage de cuivre (Cu) ; une deuxieme couche formée sur la première couche et composée de molybdène (Mo), ou un alliage contenant du cuivre (Cu) et au moins un composant choisi parmi le molybdène (Mo), le tungstène (W), le chrome (Cr), le titane (Ti), et du béryllium (Be) ; une troisième couche formée sur la deuxième couche et composée de cuivre (Cu) ou d'alliage de cuivre (Cu) ; une quatrième couche formée sur la troisième couche et composée de molybdène (Mo), ou un alliage contenant du cuivre (Cu) et au moins un composant choisi parmi le molybdène (Mo), le tungstène (W), le chrome (Cr), le titane (Ti) et le béryllium (Be) ; et une cinquième couche formée sur la quatrième couche et composée de cuivre (Cu) ou d'un alliage de cuivre (Cu), une couche de diffusion de cobalt (Co) ayant une épaisseur prédéterminée est formée au niveau des interfaces entre les première, troisième et cinquième couches et les deuxième et quatrième couches disposées entre celles-ci.
PCT/KR2019/003857 2019-03-11 2019-04-02 Plaque de dissipation de chaleur WO2020184773A1 (fr)

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KR10-2019-0027446 2019-03-11
KR20190027446 2019-03-11

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011011366A (ja) * 2009-06-30 2011-01-20 Sumitomo Electric Ind Ltd 金属積層構造体の製造方法
JP2013077666A (ja) * 2011-09-30 2013-04-25 Hitachi Ltd 配線材料および、それを用いた半導体モジュール
KR20150133312A (ko) * 2014-05-19 2015-11-30 (주)메탈라이프 클래드 소재 및 그의 제조방법, 방열 기판
KR20180097021A (ko) * 2017-02-22 2018-08-30 주식회사 더굿시스템 방열판재
JP2019029631A (ja) * 2016-08-31 2019-02-21 Jfe精密株式会社 放熱板及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016127197A (ja) 2015-01-07 2016-07-11 新日鉄住金マテリアルズ株式会社 放熱基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011011366A (ja) * 2009-06-30 2011-01-20 Sumitomo Electric Ind Ltd 金属積層構造体の製造方法
JP2013077666A (ja) * 2011-09-30 2013-04-25 Hitachi Ltd 配線材料および、それを用いた半導体モジュール
KR20150133312A (ko) * 2014-05-19 2015-11-30 (주)메탈라이프 클래드 소재 및 그의 제조방법, 방열 기판
JP2019029631A (ja) * 2016-08-31 2019-02-21 Jfe精密株式会社 放熱板及びその製造方法
KR20180097021A (ko) * 2017-02-22 2018-08-30 주식회사 더굿시스템 방열판재

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KR102263934B1 (ko) 2021-06-14

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