WO2020181568A1 - 一种非对称的pn结热电偶结构及其参数确定方法 - Google Patents

一种非对称的pn结热电偶结构及其参数确定方法 Download PDF

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WO2020181568A1
WO2020181568A1 PCT/CN2019/078587 CN2019078587W WO2020181568A1 WO 2020181568 A1 WO2020181568 A1 WO 2020181568A1 CN 2019078587 W CN2019078587 W CN 2019078587W WO 2020181568 A1 WO2020181568 A1 WO 2020181568A1
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type semiconductor
length
junction thermocouple
copper electrode
junction
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汪若尘
罗丁
余未
周卫琪
陈龙
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Jiangsu University
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    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
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    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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  • the invention belongs to the field of thermoelectric conversion and heat energy recovery, and specifically relates to an asymmetric PN junction thermocouple structure and a parameter determination method thereof. Compared with the traditional symmetric PN junction thermocouple structure, the invention can improve the output performance of the PN junction thermocouple , Improve its thermoelectric conversion efficiency.
  • thermoelectric technology has begun to be widely used in the field of heat energy recovery, such as automobile exhaust heat recovery and industrial waste heat recovery.
  • the output voltage of a single PN junction thermocouple is relatively low, generally many PN junctions are connected in series to form a thermoelectric power generation sheet, so that the output voltage can reach an energy level that can be recycled.
  • the thermoelectric power generation sheet is only a combination of many PN junctions connected in series. It is often simplified in research.
  • a single PN junction is used as the research object to optimize the structure to achieve higher output power and thermoelectric conversion efficiency, such as hexagonal semiconductor structure, Segmented semiconductor materials and pyramidal semiconductor structures, etc.
  • thermoelectric materials and doping concentrations used in the P electrode and the N electrode are different, resulting in inconsistent thermoelectric material parameters of the P electrode and the N electrode.
  • the PN junction works under the same temperature difference, the current density generated by the P pole and the N pole is different, so that the overall output current of the PN junction is limited to one of the smaller current density.
  • the purpose of the present invention is to provide an asymmetric PN junction thermocouple structure and its parameter determination method, which is used to overcome the problem of the overall output current limitation of the PN junction caused by the inconsistency of P-type semiconductor and N-type semiconductor material parameters, and improve PN
  • the overall output and thermoelectric conversion efficiency of the junction thermocouple can achieve higher output performance under the same thermoelectric material usage.
  • An asymmetrical PN junction thermocouple structure which includes opposed ceramic plates, copper electrodes, P-type semiconductors and N-type semiconductors with the same height.
  • the upper and lower ends of the P-type semiconductor and the N-type semiconductor are connected in series through the copper electrodes and clamped In the middle of the upper and lower ceramic plates, the sum of the length L P of the P -type semiconductor and the length L N of the N-type semiconductor is 2L, where L is the initial length of the P-type and N-type semiconductors;
  • the length of the P-type semiconductor L P is L ⁇ i ⁇ ⁇ l, N-type semiconductor of a length L N i is the number of iterations to be determined, ⁇ l is the length change value of the P-type semiconductor and the N-type semiconductor in each iteration calculation;
  • the total length of the copper electrode connected to the upper end of the P-type semiconductor and the N-type semiconductor is 2L+L s , where L s is the distance between the P-type semiconductor and the N-
  • a method for determining the parameters of an asymmetric PN junction thermocouple structure calculating the integral median value of resistivity of P-type semiconductor and N-type semiconductor with Value, determine the relationship between the length of the P-type semiconductor and the N-type semiconductor, establish the differential equations of the PN junction thermocouple structure, set the boundary conditions to calculate the Peltier heat of the P-type and N-type semiconductors, and set the current boundary conditions to compare the load resistance with The copper electrode is connected, the temperature boundary condition is set to load the temperature, and the output voltage at both ends of the load resistance is finally calculated to obtain the output power of the PN junction thermocouple.
  • the temperature on the contact surface between the P-type semiconductor and the N-type semiconductor and the lower copper electrode, and the temperature on the contact surface between the lower copper electrode and the P-type semiconductor and the N-type semiconductor is equal, namely:
  • the temperature on the contact surface between the P-type semiconductor and the N-type semiconductor and the upper copper electrode, and the temperature on the contact surface between the upper copper electrode and the P-type semiconductor and the N-type semiconductor is equal, namely:
  • the current boundary condition is: the left end face of the lower copper electrode and the left end face of the resistor are set to ground, that is, the voltage is 0; the right end face of the lower copper electrode and the right end face of the resistor, Set the faces to be in electrical contact, that is, the voltages are equal.
  • the temperature boundary condition is: the contact wall surface of the PN junction thermocouple and the environment is set as an adiabatic boundary, the bottom surface of the lower ceramic plate is set as a high temperature boundary, and the top surface of the upper ceramic plate is set as a low temperature boundary.
  • the present invention provides an asymmetric PN junction thermocouple structure and a parameter optimization method thereof.
  • the P-type semiconductor and the N-type semiconductor of the asymmetric PN junction thermocouple structure have different cross-sectional areas, and the length of the P-type semiconductor is L ⁇ i ⁇ l, the length of the N-type semiconductor is
  • the overall output power of the PN junction is obtained by solving the differential equations of the PN junction thermocouple. The appropriate ⁇ l value is selected and the solution is iteratively solved i times.
  • the invention can increase the output power of the PN junction thermocouple, and guide the optimization of the traditional PN junction thermocouple structure, save thermoelectric materials, and reduce the material cost of the thermoelectric power generation sheet to a certain extent.
  • Figure 1 is a schematic diagram of an asymmetric PN junction thermocouple structure
  • Figure 2 is a flow chart of the parameter calculation of the asymmetric PN junction thermocouple structure
  • Figure 3 is a definition diagram of wall boundary conditions
  • Figure 4 shows the relationship between the output current of the PN junction thermocouple and the length of the semiconductor
  • Figure 5 shows the relationship between the output voltage of the PN junction thermocouple and the length of the semiconductor
  • Figure 6 shows the relationship between the output power of the PN junction thermocouple and the length of the semiconductor.
  • an asymmetrical PN junction thermocouple structure includes a ceramic plate, a copper electrode, a P-type semiconductor and an N-type semiconductor; the P-type semiconductor and the N-type semiconductor are connected in series through the copper electrode and sandwiched between Between the ceramic plates; the heights of the ceramic plate, copper electrode, and P-type semiconductor are H 1 , H 2 and H 3 respectively, and the height of the N-type semiconductor is equal to the height of the P-type semiconductor; the ceramic plate, copper electrode, P The width of both the N-type semiconductor and the N-type semiconductor is W; the length of the ceramic plate is 2L+2L s , where L s is the distance between the P-type semiconductor and the N-type semiconductor, and the length of the upper copper electrode is 2L+L s , the length L P of the P-type semiconductor is L ⁇ i ⁇ l, and the length L N of the N-type semiconductor is The lengths of the two copper electrodes at the lower end are respectively equal to the length of the semiconductor connected to it plus L
  • thermocouple structure As shown in Figure 2, the specific implementation steps of a method for determining the parameters of an asymmetric PN junction thermocouple structure are as follows:
  • Step 1 Calculate the median integral resistivity of P-type semiconductor and N-type semiconductor with Value to determine the relationship between the length of P-type semiconductor and N-type semiconductor
  • T h and T c are the hot junction temperature and cold junction temperature of the PN junction thermocouple, respectively, and ⁇ P (T) is the resistivity of the P-type semiconductor;
  • ⁇ N (T) is the resistivity of the N-type semiconductor
  • Step 2 Establish the differential equations followed by the PN junction thermocouple
  • T is the temperature
  • TP is the temperature of the P-type semiconductor
  • T N is the temperature of the N-type semiconductor
  • ⁇ co and ⁇ co are the thermal conductivity and resistivity of the copper electrode, respectively;
  • ⁇ ce is the thermal conductivity of the ceramic plate
  • I the electric field density vector
  • ⁇ the electric potential difference
  • ⁇ the Seebeck coefficient
  • ⁇ is the resistivity of the material.
  • Step 3 as shown in Figure 3, set the boundary conditions for the wall surfaces A, B, C, D, E, F, G, H, I, and J of the PN junction thermocouple, where the surfaces A, G, I, J Is the voltage boundary, connect the thermocouple and the load resistance in series; planes B, C, E, F are the Peltier thermal boundary, calculate the Peltier heat of the contact surface of the P-type semiconductor, the N-type semiconductor and the copper electrode; surface D, H is the temperature boundary, and a temperature load is applied at both ends;
  • the temperature on the contact surface between the lower copper electrode and the P-type semiconductor and the N-type semiconductor is equal, namely:
  • the heat conduction of the lower copper electrode is equal to the heat conduction of the P-type semiconductor and the N-type semiconductor plus the Peltier heat of the P-type semiconductor and the N-type semiconductor, namely:
  • the temperature on the contact surface between the upper copper electrode and the P-type semiconductor and the N-type semiconductor is equal, namely:
  • the heat conduction of the upper copper electrode is equal to the heat conduction of P-type semiconductor and N-type semiconductor plus the Peltier heat of P-type semiconductor and N-type semiconductor, namely:
  • the bottom surface H is provided at a high temperature ceramic plate boundary, i.e. the surface temperature T H is H, D on the top surface of the ceramic plate is set to a low temperature boundary, i.e., surface D
  • the temperature is T C.
  • the length of the N-type semiconductor L+i ⁇ l.
  • thermoelectric material used in the PN junction thermocouple of this example is BiSbTeSe-based material, and the thermoelectric material parameters of BiSbTeSe-based P-type and N-type semiconductors are listed in Table 1.
  • the optimized PN junction uses the same number of thermoelectric materials, the output current and output voltage are increased by 2.33%, and the output power is increased by 4.71%.

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Abstract

本发明公开一种非对称的PN结热电偶结构及其参数确定方法，本发明通过改变P型半导体或N型半导体的结构参数，使得P型半导体和N型半导体产生的电流相等，实现PN结热电偶的高效输出。同时，本发明基于数值求解方法提供一种PN结参数确定方法，得到PN结的最优尺寸参数。

Description

一种非对称的PN结热电偶结构及其参数确定方法 技术领域
本发明属于热电转换、热能回收领域，具体涉及一种非对称的PN结热电偶结构及其参数确定方法，相比传统对称的PN结热电偶结构，本发明能提升PN结热电偶的输出性能，提高其热电转换效率。
背景技术
近年来，能源问题不断加剧，各国纷纷出台相关政策控制石油、煤、天然气等不可再生能源的开采和利用，如上调石油价格、推广新能源车辆等。另一方面，核电、水电、风电、光伏和热电等能源技术不需要消耗化石燃料，受到国内外的广泛关注，其中，光伏和热电是利用半导体在太阳辐射和温差的作用下产生的载流子定向移动而进行发电的清洁能源技术，其具有永久性、清洁性和无运动部件等优点。现阶段，光伏技术的发展较快，已取得较为成熟的应用，而热电技术受限于高昂的材料成本和较低的转换效率，尚处于商业化的发展阶段。
得益于现代技术的发展，热电材料的性能取得了很大程度的提升，热电技术开始被广泛应用于热能回收领域，如汽车尾气余热回收、工业废热回收等。另外，由于单一PN结热电偶的输出电压较低，一般将许多个PN结串联组成温差发电片，使输出电压达到能够回收利用的能级水平。然而，温差发电片仅是众多PN结相互串联的组合体，研究中常对其简化，以单个PN结为研究对象进行结构优化，实现更高的输出功率和热电转换效率，如六角状半导体结构、分段式半导体材料和金字塔型半导体结构等。但是，这些结构优化方法忽略了PN结是由P型半导体和N型半导体通过串联形成的本质，P型半导体和N型半导体都采用相同的结构尺寸和相同数量的热电材料，在实际应用中，为了使P型半导体富含空穴，而N型半导体富含电子，P极和N极使用的热电材料和掺杂浓度有所差异，造成P极和N极的热电材料参数不一致。当PN结在同一温差下工作时，P极和N极产生的电流密度不一样，使得PN结整体的输出电流受限于其中一个较小的电流密度。
发明内容
本发明的目的在于提供一种非对称的PN结热电偶结构及其参数确定方法，用来克服由于P型半导体和N型半导体材料参数不一致引起的PN结整体输出电流受限的问题，提升PN结热电偶整体的输出与热电转化效率，在相同热电材料使用量的情况下实现更高的输出性 能。
本发明的目的通过如下技术方案实现：
一种非对称的PN结热电偶结构，包括相对设置的陶瓷板、铜电极、高度相同的P型半导体和N型半导体，所述P型半导体和N型半导体上下端通过铜电极串联后，夹于上下陶瓷板中间，其中P型半导体的长度L P和N型半导体的长度L N的长度值和为2L，L是P型、N型半导体初始长度；所述P型半导体的长度L P为L±i×Δl，N型半导体的长度L N为
Figure PCTCN2019078587-appb-000001
i为待确定的迭代次数，Δl为P型半导体、N型半导体每次迭代计算时的长度变化值；与P型半导体和N型半导体上端连接的铜电极总长度为2L+L s，其中L s为P型半导体和N型半导体之间的间距；与P型半导体下端接触的铜电极的长度为
Figure PCTCN2019078587-appb-000002
与N型半导体下端接触的铜电极的长度为
Figure PCTCN2019078587-appb-000003
一种非对称的PN结热电偶结构的参数确定方法，计算P型半导体和N型半导体的电阻率积分中值
Figure PCTCN2019078587-appb-000004
和
Figure PCTCN2019078587-appb-000005
值，确定P型半导体和N型半导体的长度大小关系，建立PN结热电偶结构的微分方程组，设置边界条件计算P型和N型半导体的帕尔贴热，设置电流边界条件将负载电阻与铜电极连接，设置温度边界条件加载温度，最终计算得到负载电阻两端的输出电压，得到PN结热电偶的输出功率。
进一步，若
Figure PCTCN2019078587-appb-000006
则P型半导体的长度L P为L+i×Δl，N型半导体的长度L N为L-i×Δl；若
Figure PCTCN2019078587-appb-000007
则P型半导体的长度L P为L-i×Δl，N型半导体的长度L N为L+i×Δl；若
Figure PCTCN2019078587-appb-000008
则P型半导体的长度等于N型半导体的长度为L P＝L N＝L。
进一步，确定
Figure PCTCN2019078587-appb-000009
和
Figure PCTCN2019078587-appb-000010
时的P型半导体和N型半导体长度，具体过程为：选定Δl，
Figure PCTCN2019078587-appb-000011
计算当i＝0、1时PN结热电偶整体的输出功率P 0和P 1，判断是否满足P 0<P 1，若是则i＝i+1，返回重新计算PN结热电偶整体的输出功率P i，再次判断是否满足P i<P i+1，直到P i≥P i+1时停止循环。
进一步，所述计算帕尔贴热的边界条件为：
P型半导体和N型半导体与下端铜电极的接触面上，下端铜电极与P型半导体、N型半导体接触面上的温度相等，即：
Figure PCTCN2019078587-appb-000012
下端铜电极的热传导等于P型半导体和N型半导体热传导加上P型半导体和N型半导体的帕尔贴热，即：
Figure PCTCN2019078587-appb-000013
其中z＝H 1+H 2表示接触面的坐标轴位置；
P型半导体和N型半导体与上端铜电极的接触面上，上端铜电极与P型半导体、N型半导体接触面上的温度相等，即：
Figure PCTCN2019078587-appb-000014
上端铜电极的热传导等于P型半导体和N型半导体热传导加上P型半导体和N型半导体的帕尔贴热，即：
Figure PCTCN2019078587-appb-000015
其中z＝H 1+H 2+H 3表示接触面的坐标轴位置。
进一步，所述电流边界条件为：下端铜电极的左侧端面和电阻的左侧端面上，将面设置为接地，即电压为0；下端铜电极的右侧端面和电阻的右侧端面上，将面设置为电接触，即电压相等。
进一步，所述温度边界条件为：PN结热电偶与环境的接触壁面设置为绝热边界，下陶瓷板的底面设置为高温边界，上陶瓷板的顶面设置为低温边界。
本发明的有益效果为：
本发明提供一种非对称的PN结热电偶结构及其参数优化方法，所述非对称PN结热电偶结构的P型半导体和N型半导体具有不同的横截面积，其中P型半导体的长度为L±i×Δl，N型半导体的长度为
Figure PCTCN2019078587-appb-000016
通过求解PN结热电偶的微分方程组得到PN结的整体输出功率，选取合适的Δl值，迭代求解i次，最终得到PN结热电偶的最大输出功率，从而确定P型半导体和N型半导体的长度尺寸，本发明能提高PN结热电偶的输出功率，并指导传统的PN结热电偶结构进行优化，节约热电材料，一定程度上降低温差发电片的材料成本。
附图说明
图1为非对称的PN结热电偶结构示意图；
图2为非对称的PN结热电偶结构的参数计算流程图；
图3为壁面边界条件定义图；
图4为PN结热电偶的输出电流随半导体长度变化关系图；
图5为PN结热电偶的输出电压随半导体长度变化关系图；
图6为PN结热电偶的输出功率随半导体长度变化关系图。
具体实施方式
下面结合附图、具体的PN结热电偶结构及其材料参数，来说明本发明的技术方案。
如图1所示，一种非对称的PN结热电偶结构，包括陶瓷板、铜电极、P型半导体和N型半导体；所述P型半导体和N型半导体通过铜电极串联连接，并夹于陶瓷板之间；所述陶瓷板、铜电极和P型半导体的高度分别为H 1、H 2和H 3，N型半导体的高度等于P型半导体的高度；所述陶瓷板、铜电极、P型半导体和N型半导体的宽度均为W；所述陶瓷板的长度为2L+2L s，其中，L s为P型半导体和N型半导体之间的间距，上端铜电极的长度为2L+L s，P型半导体的长度L P为L±i×Δl，N型半导体的长度L N为
Figure PCTCN2019078587-appb-000017
下端两个铜电极的长度分别等于与其相连半导体的长度加L s/2；其中L是P型、N型半导体初始长度，i为待确定的迭代次数，Δl为P型半导体、N型半导体每次迭代计算时的长度变化值。
如图2所示，一种非对称的PN结热电偶结构的参数确定方法具体实施步骤如下：
步骤1，计算P型半导体和N型半导体的电阻率积分中值
Figure PCTCN2019078587-appb-000018
和
Figure PCTCN2019078587-appb-000019
值，确定P型半导体和N型半导体的长度大小关系
(1)计算P型半导体的电阻率积分中值
Figure PCTCN2019078587-appb-000020
Figure PCTCN2019078587-appb-000021
式中，T h和T c分别为PN结热电偶的热端温度和冷端温度，ρ P(T)为P型半导体的电阻率；
(2)计算N型半导体的电阻率积分中值
Figure PCTCN2019078587-appb-000022
Figure PCTCN2019078587-appb-000023
式中，ρ N(T)为N型半导体的电阻率；
(3)如果
Figure PCTCN2019078587-appb-000024
则P型半导体的长度L P为L+i×Δl，N型半导体的长度L N为L-i×Δl，如果
Figure PCTCN2019078587-appb-000025
则P型半导体的长度L P为L-i×Δl，N型半导体的长度L N为L+i×Δl，如果
Figure PCTCN2019078587-appb-000026
则P型半导体的长度等于N型半导体的长度为L P＝L N＝L。
步骤2，建立PN结热电偶遵循的微分方程组
(1)P型半导体的能量守恒方程为：
Figure PCTCN2019078587-appb-000027
式中，
Figure PCTCN2019078587-appb-000028
为电流密度矢量，T为温度，T P为P型半导体的温度；
(2)N型半导体的能量守恒方程为：
Figure PCTCN2019078587-appb-000029
式中，T N为N型半导体的温度；
(3)铜电极的能量守恒方程为：
Figure PCTCN2019078587-appb-000030
式中，λ co和ρ co分别是铜电极的热导率和电阻率；
(4)陶瓷板的能量守恒方程为：
Figure PCTCN2019078587-appb-000031
式中，λ ce为陶瓷板的热导率；
(5)另外，P型和N型半导体的电场密度矢量为：
Figure PCTCN2019078587-appb-000032
式中，
Figure PCTCN2019078587-appb-000033
为电场密度矢量，φ是电势差，α为塞贝克系数；
(6)P型和N型半导体、铜电极和电阻满足电流守恒方程：
Figure PCTCN2019078587-appb-000034
Figure PCTCN2019078587-appb-000035
式中，ρ为材料的电阻率。
步骤3，如图3所示，对PN结热电偶的壁面A、B、C、D、E、F、G、H、I、J进行边界条件设置，其中，面A、G、I、J为电压边界，将热电偶与负载电阻串联连接；面B、C、E、F为帕尔贴热边界，计算P型半导体、N型半导体与铜电极接触面的帕尔贴热；面D、H为温度边界，在两端施加温度载荷；
(1)P型半导体和N型半导体与下端铜电极的接触面B和F上，满足方程：
下端铜电极与P型半导体、N型半导体接触面上的温度相等，即：
Figure PCTCN2019078587-appb-000036
下端铜电极的热传导等于P型半导体和N型半导体热传导加上P型半导体和N型半导体的帕尔贴热，即：
Figure PCTCN2019078587-appb-000037
其中，z＝H 1+H 2表示接触面B、F的坐标轴位置；
(2)P型半导体和N型半导体与上端铜电极的接触面C和E上，满足方程：
上端铜电极与P型半导体、N型半导体接触面上的温度相等，即：
Figure PCTCN2019078587-appb-000038
上端铜电极的热传导等于P型半导体和N型半导体热传导加上P型半导体和N型半导体的帕尔贴热，即：
Figure PCTCN2019078587-appb-000039
其中，z＝H 1+H 2+H 3表示接触面C、E的坐标轴位置；
(3)负载电阻和铜电极连接的电流边界条件为：
下端铜电极的左侧端面A和电阻的左侧端面J上，将壁面A、J设置为接地，即电压为0；下端铜电极的右侧端面G和电阻的右侧端面I上，将壁面G、I设置为电接触，即电压相等；
(4)温度边界条件为：
PN结热电偶与环境的接触壁面设置为绝热边界，下陶瓷板的底面H设置为高温边界，即面H的温度为T H，上陶瓷板的顶面D设置为低温边界，即面D的温度为T C。
步骤4，选定Δl，且Δl满足
Figure PCTCN2019078587-appb-000040
根据上述微分方程组和边界条件设置，利用有限元软件ANSYS可计算得到负载电阻两端的输出电压U L，根据公式
Figure PCTCN2019078587-appb-000041
计算得到当i＝0和i＝1时的PN结热电偶整体的输出功率P 0和P 1，判断是否满足P 0<P 1，若是则i＝i+1，返回重新计算PN结热电偶整体的输出功率P i，再次判断是否满足P i<P i+1，直到P i≥P i+1时停止循环，得到
Figure PCTCN2019078587-appb-000042
时的P型半导体的长度为L P＝L+i×Δl、N型半导体的长度为L N＝L-i×Δl，
Figure PCTCN2019078587-appb-000043
时的P型半导体的长度为L P＝L-i×Δl、N型半导体的长度为L N＝L+i×Δl。
本实例的PN结热电偶使用的热电材料为BiSbTeSe基材料，BiSbTeSe基P型和N型半导体的热电材料参数在表1中列出。
表1 BiSbTeSe基P型半导体和N型半导体的热电材料参数
Figure PCTCN2019078587-appb-000044
另外，PN结的相关尺寸参数及其他参数在表2中列出。
表2 PN结尺寸参数及其他参数
Figure PCTCN2019078587-appb-000045
计算P型半导体和N型半导体的电阻率积分中值
Figure PCTCN2019078587-appb-000046
和
Figure PCTCN2019078587-appb-000047
并由公式(1)和公式(2)计算可得：
Figure PCTCN2019078587-appb-000048
因为
Figure PCTCN2019078587-appb-000049
所以P型半导体的长度为L P＝L+i×Δl，N型半导体的长度为L N＝L-i×Δl；选取Δl＝0.1mm，计算PN结的输出参数，进一步确定P型半导体和N型半导体的长度。
图4、图5、图6分别为计算得到的PN结热电偶输出电流、输出电压、输出功率随半导体长度变化关系图，由图可知，当i＝5时，满足P 5≥P 6条件，停止循环，此时的PN结热电偶输出功率达到最大，即最终确定P型半导体的长度为L P＝2.2mm，N型半导体的长度为L N＝1.2mm。相比传统的PN结热电偶结构(i＝0时)，优化后的PN结在使用相同数量热电材料的情况下，输出电流和输出电压提升了2.33％，输出功率提升了4.71％。
以上依据本发明的技术方案详细描述了具体实施方式。根据本发明的技术方案在不变更本发明的实质精神下，本领域的一般技术人员可以提出可相互替换的多种结构方式以及实现方式。因此，上文描述的具体实施方式以及附图仅是对本发明的技术方案的示例性说明，而不应当视为本发明的全部或者视为对本发明技术方案的限定或限制。

Claims (10)

  1. 一种非对称的PN结热电偶结构的参数确定方法，其特征在于，计算P型半导体和N型半导体的电阻率积分中值
    Figure PCTCN2019078587-appb-100001
    和
    Figure PCTCN2019078587-appb-100002
    确定P型半导体和N型半导体的长度大小关系，建立PN结热电偶结构的微分方程组，设置边界条件计算P型和N型半导体的帕尔贴热，设置电流边界条件将负载电阻与铜电极连接，设置温度边界条件加载温度，最终计算得到负载电阻两端的输出电压，得到PN结热电偶的输出功率。
  2. 根据权利要求1所述的非对称的PN结热电偶结构的参数确定方法，其特征在于，若
    Figure PCTCN2019078587-appb-100003
    则P型半导体的长度L P为L+i×Δl，N型半导体的长度L N为L-i×Δl；若
    Figure PCTCN2019078587-appb-100004
    则P型半导体的长度L P为L-i×Δl，N型半导体的长度L N为L+i×Δl；若
    Figure PCTCN2019078587-appb-100005
    则P型半导体的长度等于N型半导体的长度为L P＝L N＝L。
  3. 根据权利要求2所述的非对称的PN结热电偶结构的参数确定方法，其特征在于，确定
    Figure PCTCN2019078587-appb-100006
    和
    Figure PCTCN2019078587-appb-100007
    时的P型半导体和N型半导体长度，具体过程为：选定Δl，
    Figure PCTCN2019078587-appb-100008
    计算当i＝0、1时PN结热电偶整体的输出功率P 0和P 1，判断是否满足P 0<P 1，若是则i＝i+1，返回重新计算PN结热电偶整体的输出功率P i，再次判断是否满足P i<P i+1，直到P i≥P i+1时停止循环。
  4. 根据权利要求1所述的非对称的PN结热电偶结构的参数确定方法，其特征在于，所述计算帕尔贴热的边界条件为：
    P型半导体和N型半导体与下端铜电极的接触面(B)和(F)上，下端铜电极与P型半导体、N型半导体接触面上的温度相等，即：
    Figure PCTCN2019078587-appb-100009
    下端铜电极的热传导等于P型半导体和N型半导体热传导加上P型半导体和N型半导体的帕尔贴热，即：
    Figure PCTCN2019078587-appb-100010
    其中z＝H 1+H 2表示接触面(B)、(F)的坐标轴位置；
    P型半导体和N型半导体与上端铜电极的接触面(C)和(E)上，上端铜电极与P型半导体、N型半导体接触面上的温度相等，即：
    Figure PCTCN2019078587-appb-100011
    上端铜电极的热传导等于P型半导体和N型半导体热传导加上P型半导体和N型半导体的帕尔贴热，即：
    Figure PCTCN2019078587-appb-100012
    其中z＝H 1+H 2+H 3表示接触面(C)、(E)的坐标轴位置。
  5. 根据权利要求1所述的非对称的PN结热电偶结构的参数确定方法，其特征在于，所述电流边界条件为：下端铜电极的左侧端面(A)和电阻的左侧端面(J)上，将面(A)、(J)设置为接地，即电压为0；下端铜电极的右侧端面(G)和电阻的右侧端面(I)上，将面(G)、(I)设置为电接触，即电压相等。
  6. 根据权利要求1所述的非对称的PN结热电偶结构的参数确定方法，其特征在于，所述温度边界条件为：PN结热电偶与环境的接触壁面设置为绝热边界，下陶瓷板的底面(H)设置为高温边界，上陶瓷板的顶面(D)设置为低温边界。
  7. 一种根据权利要求1-6任一所述的非对称的PN结热电偶结构，其特征在于，包括相对设置的陶瓷板、铜电极、高度相同的P型半导体和N型半导体，所述P型半导体和N型半导体上下端通过铜电极串联后，夹于上下陶瓷板中间，其中P型半导体的长度L P和N型半导体的长度L N的长度值和为2L，L是P型、N型半导体初始长度。
  8. 根据权利要求7所述的非对称的PN结热电偶结构，其特征在于，所述P型半导体的长度L P为L±i×Δl，N型半导体的长度L N为
    Figure PCTCN2019078587-appb-100013
    i为待确定的迭代次数，Δl为P型半导体、N型半导体每次迭代计算时的长度变化值。
  9. 根据权利要求8所述的非对称的PN结热电偶结构，其特征在于，与P型半导体和N型半导体上端接触的铜电极总长度为2L+L s，其中L s为P型半导体和N型半导体之间的间距。
  10. 根据权利要求9所述的非对称的PN结热电偶结构，其特征在于，与P型半导体下端接触的铜电极的长度为
    Figure PCTCN2019078587-appb-100014
    与N型半导体下端接触的铜电极的长度为
    Figure PCTCN2019078587-appb-100015
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