WO2020180438A1 - Gas permeable superstrate and methods of using the same - Google Patents
Gas permeable superstrate and methods of using the same Download PDFInfo
- Publication number
- WO2020180438A1 WO2020180438A1 PCT/US2020/016315 US2020016315W WO2020180438A1 WO 2020180438 A1 WO2020180438 A1 WO 2020180438A1 US 2020016315 W US2020016315 W US 2020016315W WO 2020180438 A1 WO2020180438 A1 WO 2020180438A1
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- WO
- WIPO (PCT)
- Prior art keywords
- superstate
- layer
- amorphous fluoropolymer
- substrate
- planarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
Definitions
- the present disclosure relates to substrate processing, and more particularly to planarization of surfaces in semiconductor fabrication.
- Planarization techniques are useful in fabricating electronic devices on semiconductor wafers. Such techniques can include the use of fluid dispense systems for depositing a formable material onto the wafer. A superstate planarizes and/or patterns the dispensed material before the dispensed material is solidified on the wafer.
- a superstate can include a body with a contact surface and an amorphous fluoropolymer layer on the contact surface of the body.
- the amorphous fluoropolymer layer can be permeable to gases having an atomic mass greater than 4.
- the amorphous fluoropolymer can include a dioxolane ring.
- the amorphous fluoropolymer can include a perflurorodioxole tetrafluoroethylene copolymer.
- the amorphous fluoropolymer can include a copolymer of pert! uoro(3-hutenyl vinyl ether).
- the body can include a hydrocarbon polymer layer between the contact surface and the amorphous fluoropolymer layer.
- the hydrocarbon polymer layer can include polytrimethylsilyl propyne, polymethyl methacrylate, polycarbonate polymers, polyimides, and any combination thereof.
- the amorphous fluoropolymer layer can have a critical surface tension of at least 20 mN/m and no more than 40 mN/m.
- the amorphous fluoropolymer layer can include -(CXY— CF2- )a— (-Z-)b-, where X and Y can include F, Cl, or H, and Z can include a four (4), five (5), or six (6) member fluorocarbon ring structure containing at least one C-O-C linkage.
- the amorphous fluoropolymer layer is permeable to nitrogen, oxygen, and argon.
- the amorphous fluoropolymer layer comprises an oxygen permeation coefficient of greater than 1.0x 10 -10 cm3*cm/cm2*S*cmHg.
- a method of planarization can include dispensing a planarization precursor material over a substrate, wherein the substrate includes a non-uniform surface topography and contacting the planarization precursor material with a superstrate.
- the superstate can further include a body with a contact surface and an amorphous fluoropolymer layer on the contact surface of the body.
- the amorphous fluoropolymer layer can be permeable to gases having an atomic mass greater than 4.
- the method can also include curing the planarization precursor material to form a planarization layer over the substrate, wherein curing can be performed while the superstrate is contacting the planarization precursor material.
- the method can include flowing an inert gas before contacting the planarization precursor material with the body of the superstrate.
- the inert gas comprises oxygen, nitrogen, argon, or any combination thereof.
- the inert gas does not comprise helium.
- the amorphous fluoropolymer comprises a dioxolane ring.
- the amorphous fluoropolymer comprises a perflurorodioxole tetrafluoroethylene copolymer.
- the amorphous fluoropolymer is a polymer or copolymer of perfluoro(3-butenyl vinyl ether).
- the amorphous fluoropolymer layer is permeable to nitrogen, oxygen, and argon, or any combination thereof.
- a method of manufacturing can include dispensing a formable material on a substrate and contacting the formable material on the substrate with a superstrate to form a planar layer.
- the superstrate can further include a body with a contact surface and an amorphous fluoropolymer layer on the contact surface of the body.
- the amorphous fluoropolymer layer can be permeable to gases having an atomic mass greater than 4.
- the method can also include curing the planarization precursor material to form a planarization layer over the substrate, wherein curing is performed while the superstrate is contacting the planarization precursor material.
- the method of manufacturing can also include separating the superstrate and the planar layer on the substrate, processing the substrate on which the planar layer has been formed, and manufacturing the article from the processed substrate.
- FIG. 1 includes an illustration of a side view of an exemplary system.
- FIG. 2 includes an illustration of a side view of a superstrate, according to one embodiment.
- FIG. 3A includes an illustration of a general structure used in a superstrate of the system of FIG. 1, according to one embodiment.
- FIG. 3B includes an illustration of a general structure used in a superstrate of the system of FIG. 1, according to one embodiment.
- FIG. 4 includes an illustration of a method of the present disclosure.
- FIG. 5 includes an illustration of the permeability coefficients as a function of kinetic diameter for various compositions.
- an apparatus 10 in accordance with an embodiment described herein can be used to planarize a substrate 12.
- the substrate 12 may be a semiconductor base material, such as a silicon wafer, but may include an insulating base material, such as glass, sapphire, spinel, or the like.
- the substrate 12 may be coupled to a substrate holder 14.
- the substrate holder 14 may be a vacuum chuck; however, in other embodiments the substrate holder 14 may be any chuck including vacuum, pin-type, groove-type, electrostatic, electromagnetic, or the like.
- the substrate 12 and substrate holder 14 may be further supported by a stage 16.
- the stage 16 may provide translating or rotational motion along the X-, Y-, or Z-directions.
- the stage 16, substrate 12, and substrate holder 14 may also be positioned on a base (not illustrated).
- the superstrate 18 can include a body having a first side and a second side facing towards the substrate 12. In an embodiment, a mesa may extend from the second side (not shown). In another embodiment, the superstrate 18 can be formed without a mesa, as seen in FIG. 1.
- the superstrate 18 may be formed from such materials including a glass-based material, silicon, a spinel, fused-silica, quartz, silicon, organic polymers, siloxane polymers, fluorocarbon polymers, metal, hardened sapphire, other similar materials, or any combination thereof.
- the glass-based material can include soda lime glass, borosilicate glass, alkali-barium silicate glass, aluminosilicate glass, quartz, synthetic fused-silica, or the like.
- the superstrate 18 can include a deposited oxide, anodized alumina, an organo-silane, an organosilicate material, an organic polymer, inorganic polymers, and any combination thereof. As described in more details below, the superstrate 18 can include a layer 210.
- the body of the superstrate 18 can have a thickness in a range of 30 microns to 2000 microns.
- the superstrate 18 can include a single or multi-piece construction. In one
- a surface of the superstrate or mesa thereof can include a planar contact surface.
- the contact surface can include features that define any original pattern that forms the basis of a pattern to be formed on the substrate 12.
- the superstate 18 can be used to planarize a formable material deposited on a substrate 12.
- the superstate 18 can be coupled to a superstate holder 28.
- the superstate 18 may be both held by and its shape modulated by the superstate holder 28.
- the superstate holder 28 may be configured to hold a superstate 18 within a chucking region.
- the superstate holder 28 can be configured as vacuum, pin-type, groove-type, electostatic, electomagnetic, or another similar holder type.
- the superstate holder 28 can be used to modulate the shape of superstate 18 by applying pressure, either positive or vacuum, to various zones of holder 28 in order to modulate the shape of the superstate 18.
- the superstate holder 28 can include a tansparent window within the body of the superstate holder 28.
- the superstate holder 28 may be coupled to a head 26 such that the superstate holder 28 or head 26 can facilitate translation or rotational motion of the superstate 18 along the X-, Y-, or Z-directions.
- the superstate 18 can have a surface area that is about the same as the substate 12.
- the substrate 12 and superstate 18 may have a 300mm diameter.
- the substate 12 and superstate 18 may have a diameter between 300mm and 600mm.
- the substate 12 and superstate 18 may have a diameter between 300mm and 450mm.
- the substate 12 and superstate 18 may have a diameter between 450mm and 600mm.
- the apparatus 10 can further include a fluid dispense system 32 used to deposit a formable material 34 on the surface of the substrate 12.
- the formable material 34 can include a polymerizable material, such as a resist or resin.
- the formable material 34 can be positioned on the substrate 12 in one or more layers using techniques such as droplet dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, or combinations thereof.
- the formable material 34 can be dispensed upon the substrate 12 before or after a desired volume is defined between the superstrate 18 and the substrate 12.
- the formable material 34 can include a monomer or oligomer mixture that can be cured using ultraviolet light, heat, or the like.
- the system 10 can further include an energy source 38 coupled to a direct energy 40 along a path 42.
- the head 26 and stage 16 can be configured to position the superstrate 18 and substrate 12 in superimposition with the path 42.
- the system 10 can be regulated by a logic element 54 in communication with the stage 16, head 26, fluid dispense system 32, or energy source 38, and may operate on a computer readable program, optionally stored in memory 56.
- the logic element 54 may be a processor (for example, a central processing unit of a
- microprocessor or microcontroller a field-programmable gate array (FPGA), an application specific integrated circuit (ASIC), or the like.
- the processor, FPGA, or ASIC can be within the apparatus.
- the logic element can be a computer external to the apparatus 10 and is bidirectionally coupled to the apparatus 10.
- FIG. 2 includes an illustration of a side view of a superstate 18, according to one embodiment.
- the superstate 18 can include a body 220 and a layer 210.
- the body 220 of the superstate 18 may be formed from such materials including a glass-based material, silicon, a spinel, fused-silica, quartz, silicon, organic polymers, siloxane polymers, fluorocarbon polymers, metal, hardened sapphire, other similar materials, or any combination thereof.
- the glass-based material can include soda lime glass, borosilicate glass, alkali-barium silicate glass,
- the layer 210 can be an amorphous fluoropolymer layer. In one embodiment, the layer 210 can include a
- the layer 210 can include a dioxolane ring.
- the layer 210 can include a chemical structure that includes -(CXY— CF2-)a— (-Z-)b-, where X and Y can be F, Cl, or H and Z can be a four (4), five (5), or six (6) member fluorocarbon ring structure containing at least one C-O-C linkage.
- the layer 210 can include a copolymer of 2, 2 bistrifluroromethyl-4,5- difluoro-l,3-dioxole (PDD), such as seen in FIG. 3 A.
- PDD 2, 2 bistrifluroromethyl-4,5- difluoro-l,3-dioxole
- the layer 210 can include a chemical structure that includes -( CFz— Z— CFz-)-, where X and Y can be F, Cl, or H and Z can be a four (4), five (5), or six (6) member fluorocarbon ring structure containing at least one C-O-C linkage, as seen in FIG. 3B.
- the layer 210 can include a monomer of formula 1 seen below.
- the layer 210 can have a thickness greater than lOOnm, such as greater than 300nm, or greater than 500nm, or greater than 1 micron, or greater than 2 microns.
- the layer 210 can have a thickness less than 5 microns, such as less than 4 microns, or less than as 3 microns.
- the layer 210 can have a thickness that is between lOOnm and 5 microns.
- the layer 210 can be permeable to gas, such as permeable to nitrogen, oxygen, helium, and argon.
- the layer 210 can include an oxygen permeation coefficient of greater than l.Ox 10 -10 cm 3 *cm/cm 2 *S*cmHg.
- the layer 210 is on the body 220 of the superstate 18.
- the superstate may include multiple layers between the body 220 and the layer 210. For example, in one
- the superstate can include the body 220, the layer 210, and a hydrocarbon polymer layer in between the body 220 and the layer 210.
- the hydrocarbon polymer layer can include polyhimethylsilyl propyne (PTMSP), polymethyl methacrylate (PMMA), polycarbonate polymers, polyimides, or any combination thereof.
- the superstate 18 can be used to planarize a formable material on a substrate 12. Over time, continued use can wear the surface of the superstate 18.
- the superstate 18 is replaced after damage occurs.
- the inventors have found a coating layer that can both protect the surface of a substate 18 while enhancing the various requirements necessary to enable planarization, in particular planarization techniques where the resist material is dispensed as droplets onto the substate, for example, inkjet-adaptive planarization (1AP process).
- IAP processes may in particular use gases to reduce defects transferred to the substrate during planarization, any layer used needs to be permeable to the gas being used. Many processes use gases that are in high demand, low supply and thus expensive. As such, there exists a great need for a material that can meet all the requirements necessary to enable IAP.
- the layer 210 has good mechanical strength, a non-condensable gas transport property, high transport selectivity between non-condensable gases and condensable organic gases, UV transparency, and low adhesive forces between resist materials, such as e.g., acrylic, vinyl, and epoxy-based polymers to aid in the planarization process.
- the layer 210 can be chemically treated, with for example plasma treatments, to increase the surface energy of the layer 210. Treating the layer 210 can change the chemical nature of the polymer on the surface making contact with the formable material without substantially affecting the transport or selectivity of the polymer.
- the layer 210 has a critical surface tension of at least 20 mN/m and no greater than 45 mN/m.
- Gas transport selectivity between so called non-condensable gases such as oxygen and nitrogen and condensable organic gases such as methane, ethane, and propane can be described as the ratio of gas permeation coefficients through a film at common conditions. Due to the highly fluorinated nature of polymers most useful for layer 210, chemical sorption of organic gases is low, whereas sorption of organic vapors to predominantly hydrocarbon polymers can be high. For fluorocarbon polymers, this leads to improved selectivity between non-condensable gases and condensable organic gases. Polymers most useful for layer 210 will have
- the layer 210 can be permeable to molecules having an atomic mass greater than 1, such as an atomic mass greater than 4, or an atomic mass greater than 5, or an atomic mass greater than 12, or an atomic mass greater than 39.
- FIG. 4 includes an illustration of a method 400 of the present disclosure.
- the method begins at operation 410 by dispensing a planarization precursor material 34 over a substrate 12.
- the substrate 12 can include a non-uniform surface topography. In other words, a surface of the substrate 12 may be non-uniform.
- the formable material 34 can include a polymerizable material, such as a resist.
- the formable material 34 can be positioned on the substrate 12 in one or more layers using techniques such as droplet dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, or combinations thereof.
- CVD chemical vapor deposition
- PVD physical vapor deposition
- the formable material 34 can be dispensed upon the substrate 12 before or after a desired volume is defined between the superstate 18 and the substrate 12.
- the desired volume could include a gas.
- the method can include, for example, flowing a gas after the planarization precursors material is dispensed but prior to contact with the superstate 18.
- the gas can include oxygen, nitogen, argon, helium, or any combination thereof.
- the gas flowed does not include helium.
- the atomic mass of the molecules flowed is greater than 1, such as an atomic mass greater than 4, or an atomic mass greater than 5, or an atomic mass greater than 12, or an atomic mass greater than 39.
- the superstate 18 can contact the planarization precursor material 34, at operation 420. As the superstate 18 contacts the planarization precursor material 34, any trapped gas particles can dissipate through the layer 220.
- the superstate 18 can have a body and an amorphous fluoropolymer layer, as described above.
- the method can continue at operation 430 by curing the planarization precursor material 34 to form a planarization layer over the substrate 12.
- the formable material 34 can include a monomer or oligomer mixture that can be cured using ultaviolet light, heat, or the like.
- curing is performed while the superstate 18 is contacting the planarization precursor material 34.
- the superstate 18 can be separated from the newly formed layer formed on the substrate 12.
- the layer 210 can protect the body 220 of the superstate 18 such that the superstate 18 can be used in subsequent planarization operations.
- a method of manufacturing an article can include depositing a formable material 34 on a substrate 12 and contacting a superstate 18 with the formable material 34 on the substatel2.
- the superstate can include a body and a layer.
- the layer can include an amorphous fluoropolymer.
- the method of manufacturing an article can further include curing the formable material 34 to form a planar layer, separating the superstate 18 and the formable material 34 on the substrate 12, processing the substrate 12 on which the planar layer has been formed, and manufacturing the article from the processed substrate 12.
- FIG. 5 includes an illustration of the permeability coefficients as a function of kinetic diameter for various compositions.
- 510 can be the permeability coefficients of a layer including polycarbonate
- 520 can be the permeability coefficients of a layer including an amorphous fluoropolymer, such as layer 210
- 530 can be the permeability coefficients of a layer including polytrimethylsilylpropyne.
- the layer 210 can have an oxygen permeation coefficient of greater than 1.0 x 10 -10 cm 3 *cm/cm 2 *S*cmHg, such as greater than 3.4 x 10 -10 cm 3 *cm/cm 2 *S*cmHg, such as greater than 3.4 x 10 -8 cm 3 *cm/cm 2 *S*cmHg, such as greater than 3.4 x 10 '7 cm 3 *cm/cm 2 *S*cmHg, or such as greater than 3.4 x 10-
- the layer 210 can have a helium permeability coefficient of greater than 2.5 x 10 -8 cm 3 *cm/cm 2 *S* cmHg, such as 2.5 x 10 -7 cm 3 *cm/cm 2 *S*cmHg, or 2.5 x 10- 6 cm 3 *cm/cm 2 * S *cmHg.
- the layer 210 can have a hydrogen permeation coefficient of greater than 2.9 x 10 -8 cm 3 *cm/cm 2 * S*cmHg such as 2.9 x 10 -7 cm 3 *cm/cm 2 *S*cmHg, or 2.9 x 10-
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- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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- Silicates, Zeolites, And Molecular Sieves (AREA)
Abstract
Description
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021550274A JP7265830B2 (en) | 2019-03-05 | 2020-02-03 | Gas-permeable superstrate and its use |
| CN202080012116.0A CN113396468B (en) | 2019-03-05 | 2020-02-03 | Breathable cover sheet and method of using the same |
| KR1020217026880A KR102639559B1 (en) | 2019-03-05 | 2020-02-03 | Gas permeable superstrate and method of use thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/293,053 | 2019-03-05 | ||
| US16/293,053 US10892167B2 (en) | 2019-03-05 | 2019-03-05 | Gas permeable superstrate and methods of using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2020180438A1 true WO2020180438A1 (en) | 2020-09-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2020/016315 Ceased WO2020180438A1 (en) | 2019-03-05 | 2020-02-03 | Gas permeable superstrate and methods of using the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10892167B2 (en) |
| JP (1) | JP7265830B2 (en) |
| KR (1) | KR102639559B1 (en) |
| CN (1) | CN113396468B (en) |
| TW (1) | TWI780407B (en) |
| WO (1) | WO2020180438A1 (en) |
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| US11562924B2 (en) * | 2020-01-31 | 2023-01-24 | Canon Kabushiki Kaisha | Planarization apparatus, planarization process, and method of manufacturing an article |
| EP4270448A4 (en) | 2020-12-22 | 2025-01-15 | Canon Kabushiki Kaisha | FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD |
| KR20240005022A (en) | 2021-06-09 | 2024-01-11 | 캐논 가부시끼가이샤 | Curable compositions, methods of forming films and methods of making articles |
| US12195382B2 (en) * | 2021-12-01 | 2025-01-14 | Canon Kabushiki Kaisha | Superstrate and a method of using the same |
| JP2023090491A (en) | 2021-12-17 | 2023-06-29 | キヤノン株式会社 | METHOD OF FORMING MEMBRANE AND METHOD OF MANUFACTURING ARTICLE |
| JP2023116190A (en) | 2022-02-09 | 2023-08-22 | キヤノン株式会社 | Film forming method and article manufacturing method |
| EP4538019A1 (en) | 2022-06-13 | 2025-04-16 | Canon Kabushiki Kaisha | Curable composition, method for forming inverted pattern, method for forming film, and method for producing article |
| US12325046B2 (en) | 2022-06-28 | 2025-06-10 | Canon Kabushiki Kaisha | Superstrate including a body and layers and methods of forming and using the same |
| WO2024106268A1 (en) | 2022-11-18 | 2024-05-23 | キヤノン株式会社 | Curable composition, film formation method, pattern formation method, and article production method |
| WO2024116787A1 (en) | 2022-11-29 | 2024-06-06 | キヤノン株式会社 | Curable composition, film forming method, and article manufacturing method |
| US20240411225A1 (en) * | 2023-06-09 | 2024-12-12 | Canon Kabushiki Kaisha | System including heating means and actinic radiation source and a method of using the same |
| JP2025016184A (en) | 2023-07-21 | 2025-01-31 | キヤノン株式会社 | Curable composition, film formation method and manufacturing method of article |
| JP2025121753A (en) | 2024-02-07 | 2025-08-20 | キヤノン株式会社 | Film forming method and article manufacturing method |
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2019
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- 2020-02-03 WO PCT/US2020/016315 patent/WO2020180438A1/en not_active Ceased
- 2020-02-11 TW TW109104209A patent/TWI780407B/en active
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| KR102639559B1 (en) | 2024-02-23 |
| US10892167B2 (en) | 2021-01-12 |
| JP2022522210A (en) | 2022-04-14 |
| TWI780407B (en) | 2022-10-11 |
| US20200286740A1 (en) | 2020-09-10 |
| CN113396468B (en) | 2024-03-26 |
| KR20210116637A (en) | 2021-09-27 |
| CN113396468A (en) | 2021-09-14 |
| JP7265830B2 (en) | 2023-04-27 |
| TW202035161A (en) | 2020-10-01 |
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