WO2020175795A1 - 광학 디바이스 - Google Patents

광학 디바이스 Download PDF

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Publication number
WO2020175795A1
WO2020175795A1 PCT/KR2020/000665 KR2020000665W WO2020175795A1 WO 2020175795 A1 WO2020175795 A1 WO 2020175795A1 KR 2020000665 W KR2020000665 W KR 2020000665W WO 2020175795 A1 WO2020175795 A1 WO 2020175795A1
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WIPO (PCT)
Prior art keywords
film
layer
less
optical device
degrees
Prior art date
Application number
PCT/KR2020/000665
Other languages
English (en)
French (fr)
Inventor
박지훈
이영신
박문수
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to JP2021542403A priority Critical patent/JP7275451B2/ja
Priority to CN202080011880.6A priority patent/CN113396342B/zh
Priority to EP20763907.1A priority patent/EP3933455A4/en
Priority to US17/426,891 priority patent/US11635650B2/en
Publication of WO2020175795A1 publication Critical patent/WO2020175795A1/ko

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B9/00—Screening or protective devices for wall or similar openings, with or without operating or securing mechanisms; Closures of similar construction
    • E06B9/24—Screens or other constructions affording protection against light, especially against sunshine; Similar screens for privacy or appearance; Slat blinds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/281—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for attenuating light intensity, e.g. comprising rotatable polarising elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Definitions

  • This application relates to optical devices.
  • a device with variable transmittance using a so-called GH (Guest host) method in which a mixture of guests (dichroic dye guest) is applied is known, and a liquid crystal compound is mainly used as a host material in the device.
  • GH Guard host
  • Such a device with a variable transmittance, such as a TV or a monitor is known.
  • general display devices they are applied to various purposes including eyewear such as sunglasses and glasses, exterior walls of buildings, or sunroofs of vehicles.
  • optical films are encapsulated, etc.
  • An encapsulated structure can be considered.
  • a certain level of pressure can be applied to the optical film by encapsulation by an encapsulating agent.
  • the optical film is actually separated from each other. At least some of the electrode layers to be present may be in contact with each other by the pressure, and in this case, it may cause a problem in the driving of the optical device. Therefore, this application is to provide an optical device capable of solving the above problems. To one purpose.
  • the properties are measured at room temperature and pressure.
  • room temperature is natural, without heating or cooling. 2020/175795 1»(:1/10 ⁇ 020/000665 It is a temperature, generally any temperature in the range of about 10 O C to 30 O C, it can be about 23 O C or about 25 O C.
  • normal pressure is a natural pressure that is not specifically reduced or increased, and generally means a pressure of about 1 atmosphere equal to atmospheric pressure.
  • the optical device may include an optical film.
  • Fig. 1 is a diagram showing an exemplary optical film of this application. Referring to Fig. 1, the optical film of this application is The first base film 110 and the second base film 150, which are disposed opposite to each other, exist between the first and second base films 110 and 150.
  • the first and second base films (no,
  • first and second electrode layers 120 and 140 may have first and second electrode layers 120 and 140 formed on opposite surfaces, respectively.
  • the base film for example, an inorganic film made of glass or a plastic film may be used.
  • a plastic film a triacetyl cellulose (TAC) film;
  • C0P (cyclo olefin copolymer) films such as norbornene derivatives; Krill film such as PMMA (poly(metiyl methacrylate)); PC (polycarbonate) film; PE (polyethylene) film; PP (polypropylene) film; PVA (poly vinyl alcohol) film; DAC (diacetyl cellulose) film; Pac (polyacrylate) film ; PES (poly ether sulfone) film;
  • PEEK polyetheretherketon
  • PPS polyphenylsulfone
  • PEI polyetherimide
  • PEN Polyethylenemaphthatlate
  • PET poly ethy leneterephtalate
  • Pl polyimide
  • PSF polysulfone
  • PAR polyarylate film or fluorine resin film
  • a coating layer of a silicon compound such as gold, silver, silicon dioxide or silicon monoxide, or a coating layer such as an anti-reflection layer, if necessary. It may exist.
  • a film having a phase difference in a predetermined range may be used.
  • the substrate film may have a front phase difference of 100 nm or less.
  • the front phase difference may be about 95 nm or less, about 90 nm or less, about 85 nm or less, about 80 nm or less, about 75 nm or less, about 70 nm.
  • about 65 nm or less about 60 nm or less, about 55 nm or less, about 50 nm or less, about 45 nm or less, about 40 nm or less, about 35 nm or less, about 30 nm or less, about 25 nm or less, about 20 nm It may be less than about 15 nm, less than about 10 nm, less than about 5 nm, less than about 4 nm, less than about 3 nm, less than about 2 nm, less than about 1 nm, or less than about 0.5 nm.
  • the frontal phase difference is about 0 nm or more, about 1 nm or more, about 2 nm or more, about 3 nm or more, about 4 nm or more, about 5 nm or more, about 6 nm or more, about 7 nm or more, about 8 nm. Or more, about 9 nm or more, or about 9.5 nm or more.
  • the absolute value of the phase difference in the thickness direction of the base film may be, for example, 200 nm or less. In other examples, the absolute value of the phase difference in the thickness direction is 190 nm or less, 180 nm or less, 170 nm or less, 160 nm or less, 150 nm or less, 140 nm or less, 130 nm or less, 120 nm or less, 110 nm or less, 100 nm or less.
  • the thickness direction phase difference may be negative or positive if the absolute value is within the above range, and may be negative, for example.
  • thickness direction phase difference 3 ⁇ 43 ⁇ 4" is a value calculated by the following general formula 2, and unless otherwise specified, the standard of the phase difference in the front and thickness directions above.
  • the angles formed by the slow axes can be, for example, within a range of about 0 to 7 degrees,-within a range of 7 to 7 degrees,-within a range of 5 to 5 degrees, or-within a range of 3 to 3 degrees, or approximately parallel.
  • the angle formed by the ground axis of the base film and the light absorption axis of the polarizing layer to be described later is, for example, within a range of about 0 degrees to about 7 degrees,-within a range of 7 degrees to 7 degrees, -5 degrees to 5 degrees.
  • range of 3 to 3 degrees may be approximately parallel, or within the range of about 80 to 100 degrees, within the range of about 83 to 97 degrees, within the range of about 85 to 95 degrees, or within the range of about 87 to 92 It may be within the range of degrees or approximately vertical.
  • the base film is, the coefficient of thermal expansion 100.
  • the thermal expansion coefficient is different than '! Shea! Standing 95 ppm / K or less, and 90 m/K or less ⁇ , 80 ppm/K or less ⁇ , 75 ppm/K or less, 70 ppm/K or less, or 65 ppm/K or less, 10 ppm/K or more, 20 ppm/K or more, 30 ppm/K or more, It can be 40 ppm/K or more, 50 ppm/K or more, or 55 ppm/K or more.
  • the thermal expansion coefficient of the base film can be measured in accordance with the regulations of Show ⁇ 1 0696, for example, in the form provided by the applicable standard.
  • the furnace film can be cut and the coefficient of thermal expansion can be calculated by measuring the change in length per unit temperature, and it can be measured by a known method such as TMA (Themlo Mechanic Show).
  • a base film having a breaking elongation of 90% or more can be used as the base film.
  • the breaking elongation is 95% or more, 100% or more, 105% or more, 110% or more, 115% or more, 120% or more, 125 % Or more, 130% or more, 135% or more, 140% or more, 145% or more, 150% or more,
  • the elongation at break of the base film is measured according to ASTM D882 standard.
  • the film can be cut in the form provided by the applicable standard, and can be measured using equipment that can measure the stress-strain curve (which can measure both force and length at the same time).
  • a more durable optical device can be provided by selecting the base film to have the above coefficient of thermal expansion and/or elongation at break.
  • the thickness of the base film is not particularly limited, and is usually It can be in the range of 200 /ffli.
  • the first base film on which the first electrode layer is formed may be referred to as a first electrode base film
  • the second base film on which the second electrode layer is formed may be referred to as a second electrode base film.
  • the electrode base film may have translucency in a visible light region, for example.
  • the electrode base film may have a transmittance of 80% or more, 85% or more, or 90% or more for any wavelength in the range of about 400 nm to 700 nm or for light of 550 nm wavelength in the visible light region.
  • the transmittance may be approximately 100% or less or less than 100%.
  • the material of the electrode layer formed on the electrode base film is not particularly limited, and any material applied to forming the electrode layer in the field of optical devices can be used without particular limitation.
  • a metal oxide for example, a metal oxide; a metal wire; a metal nanotube; a metal
  • An electrode layer formed by using a mesh; carbon nanotube; graphene; or a composite material of conductive polymer ages may be applied.
  • the electrode layer antimony (Sb), barium (Ba), gallium (Ga), germanium (Ge), hafnium (Hf), indium (In), lanthanum (La), magnesium ( Mg), selenium (Se), aluminum (A1), silicon (Si), tantalum (Ta), titanium (Ti), vanadium (V), yttrium (Y), zinc (Zn) and
  • a metal oxide layer containing at least one metal selected from the group consisting of zirconium (Zr) may be used.
  • the thickness of the electrode layer should be appropriate within the range not impairing the purpose of this application.
  • the thickness of the electrode layer may be within the range of 50 nm to 300 nm or 70 nm to 200 nm, but is not limited thereto.
  • the electrode layer may be a single layer structure made of the above-described material, or a laminated structure. In the case of a laminated structure, the materials constituting each layer may be the same or different.
  • the electrode base film includes the electrode layer on the first and second base films.
  • the electrode layer applies an electric field corresponding to external energy to the light modulation layer.
  • the area to be applied (hereinafter, it can be referred to as the first area) and the electric field can be applied.
  • 2020/175795 1» (: 1 ⁇ 1 ⁇ 2020/000665)
  • the electrode layer may be connected to an external power source (hereinafter, referred to as a second area).
  • the two areas are physically separated from each other.
  • the first area may be observed along the normal direction of the surface of the optical device in the structure of the optical device.
  • the region overlaps with the optical modulation layer, and the second region may be a region in which an external terminal or the like is formed.
  • the second area of the electrode layer 120 on the first base film 0 and the second area of the electrode layer 140 on the second base film 150 may be arranged so that they do not coincide with each other. Therefore, the first base film (0) and the second base film 150 may be included in the optical film so as to alternate with each other. This case can be referred to as the first aspect of the present application.
  • FIG. 2 is a schematic side view of the optical film in this state.
  • the electrode layers 120 and 140 each formed on the surface thereof are also alternated, and among the electrode layers 120 on the first base film 110, on the second base film 150 The electrode layer 140 and on the invisible surface
  • a terminal or the like is formed on the surface of the electrode layer (e.g., the electrode layer 120 in the area indicated by 200 in FIG. 3) to form the second area, and the electrode layer 140 on the second base film 150
  • the second area is formed by forming terminals on the electrode layer 120 on the first base film (0) and the electrode layer on the invisible surface (for example, the electrode layer 140 in the area indicated by 200 in FIG. 3).
  • the structure of Fig. 2 is an example of the arrangement of base films to form a second area that does not match each other, and if the same purpose is achieved, various structures can be applied in addition to the structures of Figs. 2 and 3 In addition, in the case of the structure of Figs.
  • the optical film may further include a sealant 160 to which the first and second base films 110 and 150 are attached to each other.
  • the sealant 160 is the first The boundaries of the first and second regions on the base film (0) and the boundaries of the first and second regions on the second base film (150) exist at the outermost part of at least one side of the first base film (0).
  • the first and second base films may be attached while being present on the outermost side of at least one side of the second base film 150.
  • the electrode layer may be patterned.
  • the second region of each electrode layer is a region electrically connected to the first region and electrically connected to the first region. It may have been patterned into area 6 that is not. That is, when the area show is connected to an external power source, current flows to the first area, but area 6 is 2020/175795 1»(:1 ⁇ 1 ⁇ 2020/000665 When connected to an external power source, current does not flow to the first area.
  • the area formed on the first base film is formed on the Showa second base film.
  • the area shows may be arranged so as not to face each other. This case can be referred to as the second aspect of this application.
  • the second region may be formed to surround the first region.
  • the first and second base films are attached to each other.
  • the sealant may be present at the boundary between the first and second regions of the base film and attach the first and second base films.
  • Figs. 4 and 5 are examples of electrode layers respectively formed on the first and second base films.
  • the shape is not limited to the structures presented in Figures 4 and 5.
  • Figure 4 is, any one of the electrode layers respectively formed on the first and second base film
  • FIG. 5 may be an example of another electrode layer.
  • FIG. 4 shows an electrode layer formed on the base film from the side where the electrode layer is formed.
  • 5 is a view showing the electrode layer formed on the base film from the side where the electrode layer of the base film is not formed.
  • the electrode layer may include a plurality of compartment structures and at least one passage structure.
  • the compartment structure of the electrode layer may refer to an electrode unit formed on the base film, the above.
  • the compartment structure and other compartment structures may refer to units that are not fully electrically connected as there is no passage structure to be described later.
  • the ⁇ passage structure'' of the electrode layer may refer to an element that electrically connects two compartment structures among the above-described compartment structures.
  • the passage structure is, for example, a path shown in Figs. Structures (123, 143) can be referred to.
  • the compartment structure directly connected to the external power source is charged first, and the compartment structure connected to the external power source and the compartment structure electrically connected through the passage structure may be secondaryly charged.
  • the compartment structure that is secondarily charged may be the first region described above, and the compartment structure that is charged primarily may be the region show described above.
  • the compartment structure (121, 122, 141, 142) middle passage structure When external power is connected to a compartment structure (122, 142) that is not electrically connected to another compartment by (123, 143), only the compartment structure (122, 142) is charged, and the other compartment structure (121, 141) This compartment structure (122, 142) could be the region 6 described above.
  • the compartment structure directly connected to the external power source (121, 141) In addition, other compartment structures 122 and 142, which are electrically connected by the passage structure, are also charged.
  • the plurality of compartment structures 121, 122, 125, 141, 142, 145 of the electrode layers 120 and 140 of the present application have an upper or lower light modulation layer 130 It may comprise a central compartment (124, 144) located. This central compartment may be the first area. It is also noted that the light modulation layer 130 is located above or below the central compartment (124, 144) structure.
  • the first and second electrode layers 120 and 140 are identical to each other. As shown in 1, the first and second electrode layers 120 and 140 are identical to each other.
  • the optical modulation layer 130 is located, and in particular, it may mean that the optical modulation layer 130 is located above or below the central compartments 124 and 144 of the first and second electrode layers 120 and 140.
  • Figure 6 is an exemplary of this application for explaining the positional relationship between the central compartment (124, 144), the peripheral compartment (121, 122, 125, 141, 142, 145) and the optical modulation layer (130) It is a picture drawn by overlapping components constituting an optical device, and some components are shown through perspective or overlapping according to convenience.
  • the light modulation layer 130 may be positioned above or below the central compartments 124 and 144 of the first and second electrode layers 120 and 140.
  • the first and second electrode layers of this application may include a peripheral compartment in which no light modulation layer is located on the upper or lower portion. As shown in FIG. 6, the peripheral compartments 121, 125, 141, and 145 are optically modulated. It may mean a compartment structure of the first and second transparent electrode layers not located above or below the layer 130.
  • the passage structure of the first and second electrode layers of this application may electrically connect the central compartment and at least one peripheral compartment.
  • the passage structure is electrically connected through the central compartment and the peripheral compartment in which the optical modulation layer is present in the upper or lower part.
  • an electric field can be applied to the light modulation layer by connecting an external power source to the surrounding compartment.
  • the first and second electrode layers include a light modulation layer in the charging region of any one electrode layer.
  • the first and second electrode layers 120 and 140 may be formed as shown in Figs. 4 and 5, respectively.
  • the first and second electrode layers 120 and 140 shown in Figs. 4 and 5 Charging area In order to satisfy the above-described conditions, for example, the electrode layer 120,
  • FIG. 6 is a second base film of the optical device shown in FIG. It is a picture drawn by observing the optical device from (150), so that some of the components are transparent and overlapped for convenience of explanation 2020/175795 1»(:1 ⁇ 1 ⁇ 2020/000665 shown.
  • an external power source can be connected to the compartment structure (121, 141).
  • an external power source can be connected to the compartment structure (121, 141).
  • the compartment structures 121, 124, 125 of the first electrode layer 120 and the compartment structures 141, 144, 145 of the second electrode layer 140 are charged, thereby reducing the charging area. Therefore, referring to 6 in the above example,
  • the charged areas 121 and 125 that do not overlap with the projected area of the light modulation layer 130 are now the second electrode layer
  • the charging areas 141, 144, and 145 of 140 do not overlap with the area projected on the first electrode layer 120.
  • FIG. 7 is a diagram for explaining the principle of preventing the short circuit phenomenon of the optical device of this application.
  • FIG. 7 is a view viewed from the side of the compartment structures 121 and 141 shown in FIG.
  • the compartment structures 121 and 141 constituting the charging area as shown in FIG. 7 have pressure on the translucent electrode substrate films 110 and 150. Since the optical device of the present application is formed so as not to contact each other even when applied, a short-circuit phenomenon does not occur even when the first and second electrode layers 120 and 140 contact each other. In the above example, the compartment constituting the charging area is not caused.
  • the compartment structure 142 capable of contacting the structure 121 is not electrically connected to the charging area as shown in FIG. 5, and the compartment structure 122 capable of contacting another compartment structure 141 constituting the charging area is This is because it is not electrically connected to the charging area as shown in FIG. 4.
  • the central compartment described above is the first area
  • the peripheral compartment is the second area
  • the compartment electrically connected to the central compartment among the peripheral compartments is the area show, and is not electrically connected to the central compartment.
  • the compartment may be zone 6.
  • Figs. 4 to 7 is an example that can implement the optical film of this application.
  • Such a pattern of the electrode layer can be formed by patterning the electrode layer, or by applying an appropriate means (for example, a laser patterning method, etc.) after forming the electrode layer once.
  • the first and second regions of the electrode layer are
  • each While being formed as in the sun, each may be arranged to face each other. That is, in this case, the second region on the first base film and the second region on the second base film are arranged to face each other.
  • an insulating layer may be present, which is referred to as the third aspect of this application. I can call it
  • FIG. 8 exemplarily shows this case, and an insulating layer 170 exists between the second regions of each electrode layer 140 and 120 as shown in FIG. 8.
  • FIG. 8 is an exemplary form. If necessary, a plurality of second regions may be formed in each electrode layer, and an insulating layer may exist between them in a state in which they are disposed opposite to each other.
  • the second area is the first area
  • the insulating layer may exist between each of the second regions.
  • a sealant (160 in FIG. 8) attaching the first and second base films to each other is added. And, the sealant may be present at the boundary between the first and second regions of the base film and attach the first and second base films.
  • the types of materials that can be applied as the material of the insulating layer are not particularly limited. That is, various inorganic, organic, or organic-inorganic composite materials that are generally known in the industry to be applicable as the insulating layer are described above. It can be used as an insulating layer. In addition, the method of forming such an insulating layer in this application is also in accordance with the known content.
  • the dielectric breakdown voltage measured in accordance with ASTM D149 is about 3 kV/mm or more, about 5 kV/mm or more, about 7 kV/mm or more, 10 kV/mm or more, 15 kV/ Materials with a thickness of mm or more or 20 kV/mm or more are used.
  • the dielectric breakdown voltage is not particularly limited as the higher the value is, the better insulation properties are, but about 50 kV/mm or less, 45 kV/mm or less, 40 kV/ It may be mm or less, 35 kV/mm or less, and 30 kV/mm or less.
  • ceramic materials such as glass, alumina, ZnO, AlN (aluminum nitride), BN (boron nitride), silicon nitride, SiC or BeO, polyolefins, polyvinyl chloride, various rubber-based polymers, Polymer materials such as polyester, acrylic resin, or epoxy resin can be applied as the insulating layer.
  • the optical film of the present application may include a light modulation layer between the first and second base films (ie, at least between the first region of the electrode layer) in which the electrode layers are each angular in the above-described form.
  • the light modulation layer may be an active liquid crystal layer having at least a liquid crystal compound.
  • the active liquid crystal layer is a layer containing a liquid crystal compound, and may mean a layer capable of changing the orientation state of the liquid crystal compound through external energy.
  • the optical device can selectively switch between various modes including the transmission mode and the blocking mode, so that the phase functional copper liquid crystal layer can be a light modulation layer.
  • transmission mode has a transmittance of about 10% or more, about 15% or more, about 20% or more, about 25% or more, 30% or more, about 35% or more, about 40% or more, about 45% or more.
  • 2020/175795 1 (:1 ⁇ 1 ⁇ 2020/000665
  • the blocking mode may mean a state in which the transmittance is about 20% or less, about 15% or less, about 10% or less, or about 5% or less.
  • the transmittance in the above transmission mode is The higher the value is, the more advantageous the transmittance in the blocking mode is, and the upper limit and the lower limit are not particularly limited. In one example, the upper limit of the transmittance in the transmittance mode is about 100%, about 95%, and about 90.
  • the lower limit of the transmittance in the above blocking mode is about 0%, about 1%, about 2%, about 3 It can be %, about 4%, about 5%, about 6%, about 7%, about 8%, about 9% or about.
  • the transmittance may be a straight light transmittance.
  • the straight light transmittance may be a ratio of light (straight light) transmitted through the optical device in the same direction as the incident direction to the light incident on the optical device in a predetermined direction.
  • the transmittance may be a measurement result (normal light transmittance) of light incident in a direction parallel to the surface normal of the optical device.
  • the light whose transmittance is controlled may be ultraviolet, visible, or near-infrared rays in the 1 ⁇ -show area.
  • the ultraviolet rays in the 1 ⁇ -show area are 320 11111 to 380 11111 It is used to mean radiation having a wavelength in the range of 380 11111 to 780 11111, and visible light is used to mean radiation having a wavelength within the range of 380 11111 to 780 11111, and near-low ultraviolet radiation refers to radiation having a wavelength within the range of 780 11111 to 2000 11111. Used to mean.
  • the term external energy refers to energy applied from the outside at a level sufficient to change the orientation of the liquid crystal compound contained in the phase-functional copper liquid crystal layer.
  • the external energy is the electrode layer. It may be an electric field generated by an external voltage induced through
  • the orientation state of the liquid crystal compound is changed depending on whether the external energy is applied, its size and/or the applied position, while switching between the above-described transmission mode and the blocking mode, or between other modes. Can be switched.
  • the phase functional copper liquid crystal layer may be a liquid crystal layer called a guest host liquid crystal layer, and in this case, the active liquid crystal layer may additionally contain an anisotropic dye together with the liquid crystal compound.
  • Guest host liquid crystal layer Eun the so-called guest host As a layer, it is a liquid crystal layer in which the anisotropic dyes are aligned according to the alignment direction of the liquid crystal compound (hereinafter, it may be referred to as a liquid crystal host).
  • the alignment direction of the liquid crystal host is controlled by using the alignment film and/or the aforementioned external energy. can do.
  • the kind of liquid crystal host used in the liquid crystal layer is not particularly limited, and the guest
  • a general kind of liquid crystal compound applied for realization of the host effect can be used.
  • a smectic liquid crystal compound for example, a nematic liquid crystal compound, or a cholesteric liquid crystal compound may be used.
  • a nematic liquid crystal compound is used.
  • the term nematic liquid crystal compound refers to a liquid crystal compound that can be arranged in an orderly manner in the direction of the molecular axis, although there is no regularity about the position of the liquid crystal molecule, and such a liquid crystal compound is in the form of a rod or a disc. (discotic) form.
  • nematic liquid crystal compounds are, for example, about 40 O C or more, about 50 O C or more, about 60 O C or more, about 70 O C or more, about 80 O C or more, about 90 O C or more, about 100 It may be selected to have a clearing point above °C or above about 110 O C, or a phase transition point in the above range, that is, a phase transition point from a nematic phase to an isotropic phase. In one example, the above clearing point or phase transition point may be selected. Silver can be about 160 O C or less, about 150 O C or less, or about 140 O C or less.
  • the dielectric anisotropy may be negative or positive.
  • the absolute value of the dielectric anisotropy may be appropriately selected in consideration of the purpose.
  • the dielectric anisotropy is more than 3 or more than 7, or less than -2. Or it can be less than -3.
  • the liquid crystal compound may also have an optical anisotropy (n) of about 0.01 or more or about 0.04 or more.
  • the optical anisotropy of the liquid crystal compound may be about 0.3 or less or about 0.27 or less in other examples.
  • a liquid crystal compound that can be used as a liquid crystal host for the guest host liquid crystal layer is known in the art.
  • the liquid crystal layer is the guest host liquid crystal layer
  • the liquid crystal layer is the guest host liquid crystal layer
  • Anisotropic dyes may be included with the host.
  • ⁇ dye'' is a substance capable of intensively absorbing and/or modifying light in at least some or all of the visible light range, for example, 380 nm to 780 nm wavelength range.
  • anisotropic dye may mean a material capable of anisotropic absorption of light in at least a part or the entire range of the visible light region.
  • anisotropic dyes for example, vacuum paper dyes that are known to have properties that can be aligned according to the alignment status of the liquid crystal host can be selected and used.
  • anisotropic dyes azo dyes or anthraquinones can be used.
  • Dyes can be used, and the liquid crystal layer may contain one or two or more dyes to achieve light absorption in a wide wavelength range.
  • the dichroic ratio of this anisotropic dye may be appropriately selected in consideration of the purpose.
  • the anisotropic dye may have a dichroic ratio within the range of 5 to 20.
  • the term ⁇ dichromatic ratio'' for example, in the case of a p-type dye, can mean a value obtained by dividing the absorption of polarized light parallel to the major axis direction of the dye by the absorption of polarized light parallel to the direction perpendicular to the major axis direction. May have the dichroic ratio in at least some of the wavelengths or in one or the entire range within the wavelength range of the visible light region, for example, about 380 nm to 780 nm or about 400 nm to 700 nm.
  • the content of the anisotropic dye in the liquid crystal layer can be appropriately selected in consideration of the purpose. For example, based on the total weight of the liquid crystal host and the anisotropic dye, The content of the anisotropic dye can be selected within the range of 0.1 to 10% by weight. The ratio of the anisotropic dye can be changed taking into account the intended transmittance and the solubility of the anisotropic dye to the liquid crystal host.
  • the liquid crystal layer basically contains the liquid crystal host and the anisotropic dye,
  • additives may include, but are not limited to, chiral dopants or stabilizers.
  • the thickness of the liquid crystal layer is suitable for the implementation of the desired mode.
  • the upper limit of the thickness of the liquid crystal layer is not particularly limited,
  • it may be about 30 [ xm or less, 25 [ xm or less, 20 [ xm or less, or 15 [ xm or less.
  • the switching can be adjusted, for example, through the application of external energy such as a voltage.
  • external energy such as a voltage.
  • one of the first and second orientation states is maintained in the state where no voltage is applied, and the other orientation state is applied by voltage application. It can be lost.
  • the first and second orientation states are, in one example, horizontal times 3 ⁇ 4 vertical times 3 ⁇ 4
  • the liquid crystal layer or optical film in the blocking mode is at least horizontal orientation, twist nematic orientation or cholesteric orientation
  • the liquid crystal layer or the optical film in the transmission mode may be in a vertical orientation or a horizontal orientation state having an optical axis in a direction different from the horizontal orientation of the cutoff mode.
  • the liquid crystal device is in a conventional cutoff mode in which the cutoff mode is implemented in a state where no voltage is applied. It is possible to implement a device of (Normally Black Mode) or a Normally Transparent Mode in which the above-described transmission mode is implemented in the state of no voltage application.
  • An active liquid crystal layer such as above can have various modes.
  • An active liquid crystal layer for example,
  • EFB Electrically Controlled Birefringence
  • TN Twisted Nematic
  • nematic Super Twisted Nematic
  • the alignment characteristics of the liquid crystal compound in the active liquid crystal layer may vary depending on the driving mode of the active liquid crystal layer.
  • the liquid crystal compound in one orientation state of the active liquid crystal layer in one orientation state of the active liquid crystal layer
  • the term "twisted orientation" means that the optical axis of the active liquid crystal layer is in the range of about 0 to 15 degrees, about 0 to W, and about 0 to 5 degrees with respect to the plane of the active liquid crystal layer. It is oriented horizontally with an inner inclined angle, but the angle in the long axis direction of the neighboring liquid crystal compound contained in the active liquid crystal layer changes little by little, indicating a state in which it is twisted and arranged.
  • the alignment characteristics of the liquid crystal compound in the active liquid crystal layer can be changed by the application of an external action.
  • the transmittance when there is no external action and the active liquid crystal layer is horizontally oriented, the transmittance can be increased by switching the vertical orientation state by the application of external action.
  • the transmittance in the absence of external action, when the active liquid crystal layer is vertically oriented, the transmittance can be reduced by switching the horizontal orientation state by the application of an external action.
  • the horizontal orientation state in the initial vertical orientation state, the horizontal orientation state can be reduced.
  • a pre-tilt in a certain direction may be required to determine the orientation direction of the liquid crystal compound.
  • the method of applying the pre-tilt in the above is not particularly limited, and, for example, the intended pre-tilt This is possible by arranging an appropriate alignment film so as to impart
  • the polarization layer is formed vertically with respect to the plane of the polarization layer existing below the alignment direction of the anisotropic dye.
  • the transmitted light can be transmitted without being absorbed by the anisotropic dye of the active liquid crystal layer, thereby increasing the transmittance of the optical device.
  • the liquid crystal compound of the active liquid crystal layer is horizontally oriented, it is less than or equal to the alignment direction of the anisotropic dye.
  • the optical axis of the active liquid crystal layer Since it is parallel to the plane of the polarizing layer existing in the active liquid crystal layer, if the optical axis of the active liquid crystal layer is arranged to have a predetermined angle with respect to the absorption axis of the polarizing layer, a part of the light transmitted through the polarizing layer can be absorbed by the anisotropic dye. And, through this, the transmittance of the optical device can be reduced.
  • the optical device implements a transmission mode in which the transmittance of the visible light region is 15% or more in the presence of an external action, and the transmittance of the visible light region is 3% or less in the absence of an external action.
  • Blocking mode can be implemented.
  • Chiral agents may additionally be included. Chiral agents may induce the liquid crystal compound and/or the anisotropic dye to have a molecular arrangement or a linear structure.
  • the chiral agent is liquid crystal, for example nematic, As long as it does not impair the regularity and can trigger the intended spiral structure, it can be used without particular limitation.
  • the chiral agent to induce a helical structure in the liquid crystal is
  • chirality e.g., a compound having one or two or more asy mmetric carbons, a heteroatom phase such as a chiralamine or chiral sulfoxide.
  • a compound having one or two or more asy mmetric carbons e.g., a compound having one or two or more asy mmetric carbons, a heteroatom phase such as a chiralamine or chiral sulfoxide.
  • a bamboo adjuvant such as cumulene or binaphthol.
  • Chiral agents for example, are small molecules with a molecular weight of 1,500 or less.
  • chiral agent a commercially available chiral nematic liquid crystal, for example, a chiral dopant liquid crystal S-811 sold by Merck, or LC756 of BASF, may be used.
  • the method of determining in which direction the optical axis of the liquid crystal layer is formed in the alignment state of the liquid crystal layer is known.
  • the direction of the optical axis of the liquid crystal layer is another polarizing plate whose optical axis direction is known. It can be measured using a known measuring device, for example, a polarimeter such as Jascp's P-2000.
  • the optical film attaches the base film to a spacer that maintains the gap between the two base films between the two base films and/or the gap between the two base films disposed opposite to each other. It may further include the above sealant, etc.
  • a spacer and/or sealant a publicly known material may be used without particular limitation.
  • an alignment layer may be present on one surface of the base film, for example, on a surface facing the light modulation layer (eg, an active liquid crystal layer).
  • the alignment layer may be on the electrode layer.
  • the alignment layer controls the orientation of the liquid crystal host included in the light modulation layer such as the active liquid crystal layer.
  • a known alignment film can be applied without any particular limitation.
  • an alignment layer known in the industry there are a rubbing alignment layer and a photo alignment layer.
  • the alignment direction of the alignment layer can be controlled.
  • the alignment direction of the two alignment layers formed on each side of the two base films disposed opposite to each other is within about -10 degrees. It can be an angle within the range of W degrees, an angle within the range of -7 degrees to 7 degrees, an angle within the range of 5 degrees to 5 degrees, or an angle within the range of 3 degrees to 3 degrees, or approximately parallel to each other.
  • the orientation directions of the two alignment layers are at an angle within a range of about 80 to 100 degrees, an angle within a range of about 83 to 97 degrees, an angle within a range of about 85 to 95 degrees, or an angle within a range of about 87 to 92 degrees, or each other. It can be approximately vertical.
  • the orientation direction can be confirmed by checking the direction of the optical axis of the active liquid crystal layer.
  • the optical device may additionally include a polarization layer together with the optical film.
  • a polarization layer for example, an absorption type polarization layer, that is, a light absorption axis formed in one direction and light formed approximately perpendicular thereto. Polarization with transmissive dies can be used.
  • the average optical axis in the first alignment state (with the vector of the optical axis) and The angle at which the light absorption axis of the polarizing layer is formed is 80 to 100 degrees or 85 to 95 degrees, or is arranged to be approximately vertical, or 35 to 55 degrees or about 40 to 50 degrees, or approximately 45 degrees. It may be arranged so that it is a province.
  • the orientation direction of the orientation film formed on each side of the two base films of the optical film arranged oppositely as described above is approximately To W degrees, an angle within the range of -7 degrees to 7 degrees, an angle within the range of -5 degrees to 5 degrees, or-an angle within the range of 3 degrees to 3 degrees, or if they are approximately parallel to each other, one of the two alignment films
  • the angle between the orientation direction of one alignment layer and the light absorption axis of the polarization layer is 80 degrees to 100 degrees or 85 degrees.
  • the orientation directions of the two alignment layers are within the range of about 80 degrees to 100 degrees, the angle within the range of about 83 degrees to 97 degrees, the angle within the range of about 85 degrees to 95 degrees, or about 87 degrees to 92 degrees.
  • the angle between the orientation direction of the alignment layer and the light absorption axis of the polarization layer among the two alignment layers is 80 to 100 degrees or 85 degrees. It can reach 95 degrees, or it can be approximately vertical.
  • the optical film and the polarizing layer may be in a state in which they are laminated to each other.
  • the optical axis (average optical axis) in the first alignment direction of the optical film and the light absorption axis of the polarizing layer may be arranged such that the relationship is in the above relationship.
  • the polarization layer is a polarization coating layer to be described later, the polarization
  • a structure in which the coating layer is present inside the optical film can be implemented.
  • a structure in which the polarization coating layer is present between any one of the base films of the optical film and the light modulation layer can be implemented.
  • the electrode layer, the polarizing coating layer, and the alignment layer may be sequentially formed on at least one of the two base films of the optical film.
  • the kind of the polarization layer that can be applied to the optical device is not particularly limited.
  • the polarization layer a common material used in conventional LCDs, for example, PVA (poly (vinyl alcohol))
  • a polarization layer implemented by a coating method can be used, such as a polarization increase lamp, a lyotropic liquid crystal (LLC), or a polarization coating layer containing a reactive liquid crystal (RM) and a dichroic dye.
  • the polarizing layer implemented by the coating method as described above may be referred to as a polarizing coating layer.
  • a known liquid crystal can be used without any particular limitation, for example, a dichroic ratio of 30 to 30.
  • An oleophobic liquid crystal capable of forming an oleophobic liquid crystal layer of about 40 can be used.
  • the polarizing coating layer contains a reactive liquid crystal (RM: Reactive Mesogen) and a dichroic dye
  • the dichroic dye is linear. It is also possible to use a dye, or a discotic dye.
  • the optical device of this application has only one optical film and one polarizing layer as described above. It may contain, or contain two or more of either. Therefore, in one example, the optical device may include only one of the optical films and only one of the polarizing layers, but is not limited thereto.
  • the optical device of this application may have a structure including two opposing polarization layers, and the light modulation layer existing between the two polarization layers.
  • the absorption axes of the two opposing polarization layers may be perpendicular to each other or may be horizontal.
  • vertical and horizontal are substantially vertical and horizontal, respectively, ⁇ 5 degrees and ⁇ 5 degrees and ⁇ 5 degrees. It can be understood to include errors within 4 degrees, ⁇ 3 degrees, and ⁇ 2 degrees.
  • the optical device may additionally include two outer substrates arranged opposite to each other.
  • one of the two outer substrates is referred to as the first outer substrate, and the other is the second outer substrate. It can be called as, but the expressions 1 and 2 above do not define the relationship between the first and the second of the outer substrate.
  • the optical film or the optical film and the polarizing layer may be encapsulated between the two outer substrates. Such encapsulation may be accomplished using an adhesive film.
  • the optical film 10 and the polarizing layer 20 may be present between the two outer substrates 30 arranged opposite to each other.
  • an inorganic substrate made of glass or a plastic substrate may be used.
  • TAC triacetyl cellulose
  • COP cyclo olefin copolymer
  • Acrylic film such as PMMA (poly (methyl methacrylate); PC (polycarbonate) film; PE (polyethylene) film; PP (polypropylene) film; PVA (poly vinyl alcohol) film; DAC (diacetyl cellulose) film; Pac (poly acrylate
  • PEEK polyetheretherketon
  • PPS polypheny Is ulfone
  • PEI polyetherimide
  • PEN Polyethylenemaphthatlate
  • PET polyethyleneterephtalate
  • Pl polyimide
  • PSF polysulfone
  • PAR polyarylate
  • fluorine resin film may be used, but is not limited thereto.
  • a coating layer of a silicon compound such as gold, silver, silicon dioxide or silicon monoxide, or a coating layer such as an antireflection layer, if necessary. It may exist.
  • the thickness of the outer substrate is not particularly limited, for example, it may be about 0.3 mm or more.
  • the thickness is about 0.5 mm or more, about 1 mm or more, about 1.5 mm or more, or about 2 mm or more in other examples. It may be 10 mm or less, 9 mm or less, 8 mm or less, 7 mm or less, 6 mm or less, 5 mm or less, 4 mm or less, or 3 mm or less.
  • the outer substrate may be a flat substrate or a substrate having a curved shape.
  • the two outer substrates may be flat substrates at the same time, have a curved shape at the same time, or One is a flat substrate, the other is a curved surface It may be a shaped substrate.
  • each curvature or radius of curvature may be the same or different.
  • the curvature or radius of curvature can be measured in a manner known in the industry, for example, 2D Profile Laser Sensor, Chromatic confocal line sensor, or 3D Measuring Conforcal Microscopy. Measurements can be made using non-contacting equipment, and how to use such equipment to measure curvature or radius of curvature is known.
  • the curvature or radius of curvature of the surface facing each other that is, the curvature or radius of curvature of the surface facing the first outer substrate, and the curvature of the surface facing the first outer substrate for the second outer substrate, or
  • the curvature or radius of curvature is not constant on the surface and there are different parts, the largest curvature or radius of curvature or the smallest curvature or radius of curvature or average curvature or average radius of curvature is the standard.
  • the difference between the quantum curvature or radius of curvature is within 10%, within 9%, within 8%, within 7%, within 6%, within 5%, within 4%, within 3%, and 2%
  • the difference between the curvature or the radius of curvature is calculated as 100X(CL-CS)/CS when the large curvature or radius of curvature is 0 ⁇ 1 and the small curvature or radius of curvature is CS.
  • the lower limit of the difference between the curvature or the radius of curvature is not particularly limited. Since the difference between the curvature or radius of curvature of the two outer substrates may be the same, the difference between the curvature or radius of curvature may be more than 0% or more than 0%.
  • Control of the curvature or radius of curvature as described above is useful in a structure in which an optical film and/or a polarizing layer is encapsulated with an adhesive film, like the optical device of this application.
  • both the first and second outer substrates are curved, the curvatures of both may be the same sign.
  • the outer substrates of the two sheets may all be curved in the same direction. That is, in the above case, This is the case where both the center of curvature of the outer substrate 1 and the center of curvature of the second outer substrate exist in the same part of the upper and lower portions of the first and second outer substrates.
  • FIG. W is an example of the side in which the encapsulation portion 400 including an optical film, etc. exists between the first and second outer substrates 30, in this case, the curvature of both the first and second outer substrates 30 The center is the case in the lower part of the drawing.
  • the radius of curvature of each of the above substrates is 100R or more, 200R or more, 300R or more, 400R or more, 500R or more, 600R or more, 700R or more, 800R. 2020/175795 1»(:1 ⁇ 1 ⁇ 2020/000665 or less, 1,20011 or less, 1,10011 or less, or 1,05011 or less.
  • II means the curved hardness of 1 111111 people with a radius. Therefore,
  • 10011 is the degree of curvature of a circle with a radius of 100111111 or the radius of curvature for such a circle. Of course, when the substrate is flat, the curvature is zero, and the radius of curvature is infinite.
  • the first and second outer substrates may have the same or different radius of curvature within the above range.
  • the radius of curvature of the substrate having a large curvature is the above Can be within range.
  • a substrate having a larger curvature among them may be a substrate disposed in the direction of gravity than when using an optical device.
  • the lower portion is compared to the upper substrate.
  • the substrate may have a greater curvature.
  • the difference between the curvatures of the first and second outer substrates may be within the range described above.
  • both the first and second outer substrates are curved substrates, or When one of the first and second outer substrates is a curved substrate and the other is a flat substrate, the positional relationship is determined along the direction toward the convex portion of the curved surface. For example, in the case of a diagram, from the bottom to the top of the drawing Since the convex direction is formed, the upper outer substrate becomes the upper substrate and the lower outer substrate becomes the lower substrate.
  • the restoring force exhibited by the curved substrate among the outer substrates attached to each other by the adhesive film 400 By this, a certain level of pressure is generated in the center of the optical device, so that the occurrence of defects such as air bubbles inside can be suppressed, reduced, alleviated and/or prevented.
  • Autoclave (show 0(:1 6) process can be performed, and in this process, high temperature and high pressure are usually applied.
  • high temperature and high pressure are usually applied.
  • the adhesive film applied to encapsulation after such autoclave process and stored for a long time at temperature, etc. there may be a problem in which the outer substrate is opened due to melting of a member. When such a phenomenon occurs, a force acts on the encapsulated active liquid crystal element and/or the polarizing layer, and bubbles may form inside.
  • the optical device may additionally include an adhesive film encapsulating the optical film and/or the polarizing layer in the outer substrate.
  • an adhesive film 40 is, for example, as shown in FIG. Between the outer substrate 30 and the optical film 10, between the optical film 10 and the polarizing layer 20 and/or between the polarizing layer 20 and the outer substrate 30 It may be present, and may be present on the side of the optical film 10 and the polarization layer 20, suitably on all sides.
  • the adhesive film while bonding the outer substrate 30 and the optical film 10, the optical film 10 and the polarizing layer 20 and the polarizing layer 20 and the outer substrate 30 to each other, the optical The film 10 and the polarizing layer 20 may be encapsulated.
  • outer substrates for example, outer substrates, optical films, polarizing layers, and adhesion depending on the intended structure
  • the above structure can be implemented by laminating the film and then compressing it in a vacuum state.
  • a known material may be used, for example, a known
  • Thermoplastic polyurethane adhesive film (TPU: Thermoplastic Polyurea lane),
  • TPS Thermoplastic Starch
  • sslyide adhesive film slyester adhesive film
  • EVA Ethylene Vinyl Acetate
  • polyolefin adhesive film such as ethylene or slypropylene
  • POE film polyolefin elastomer film
  • the adhesive film a film having a phase difference in a predetermined range may be used.
  • the adhesive film may have a front phase difference of 100 nm or less.
  • the front phase difference is about 95 nm or less and about 90 nm or less in another example.
  • the frontal phase difference may be less than or equal to about Onm, more than about lnm, more than about 2 nm, more than about 3 nm, more than about 4 nm, more than about 5 nm, more than about 6 nm, more than about 7
  • the absolute value of the phase difference in the thickness direction of the adhesive film may be, for example, 200 nm or less. In other examples, the absolute value may be about 190nm or less, 180nm or less, 170nm or less, 160nm or less, 15 Onm or less, 140nm or less, 130nm or less, 120 nm or less, or 115 nm or less, or nm or more, Onm or more, 1Onm or more, 20nm or more. , 30 nm or more, 40 nm or more, 50 nm or more, 60 nm or more, 7 Onm or more, 80 nm or more, or 90 nm or more.
  • the thickness direction phase difference may be a negative number, nm or more, or a positive number having an absolute value within the above range.
  • the front phase difference (Rin) and the thickness direction phase difference (Rth) of the adhesive film are the thickness (d), the ground axial refractive index (nx), the fast axial refractive index (ny), and the thickness direction in Equations 1 and 2, respectively.
  • the same can be calculated except for substituting the refractive index (nz) of the adhesive film with the thickness of the adhesive film (d), the refractive index in the ground axis direction (nx), the refractive index in the fast axis direction (ny), and the refractive index in the thickness direction (nz).
  • the thickness of the adhesive film is the thickness of the adhesive film between the outer substrate 30 and the active liquid crystal layer 10, for example, the distance between the two, the optical film 10 and the polarization layer 20
  • the thickness of the adhesive film between, for example, the gap between the two and the thickness of the adhesive film between the polarizing layer 20 and the outer substrate 30, for example, the gap between the two.
  • the thickness of the adhesive film is not particularly limited, for example, it may be in the range of about 200 nm to 60 (Vm).
  • the thickness of the adhesive film in the above is the thickness of the outer substrate 30 and the optical film 10.
  • the thickness of the adhesive film for example the gap between the two, the thickness of the adhesive film between the optical film 10 and the polarizing layer 20, for example, the gap between the two and the polarizing layer 20 and the outer substrate 30 )
  • the optical device may additionally include any configuration required, for example, a phase difference layer, an optical compensation layer, an anti-reflection layer, a hard coating layer, etc., in an appropriate position.
  • the method of manufacturing the optical device of this application is not particularly limited.
  • the optical device may be manufactured through an autoclave process for encapsulation described above.
  • the step of encapsulating the optical film and/or the polarizing layer between the first and second outer substrates disposed oppositely through an autoclave process using an adhesive film In this process, specific matters including the difference in curvature of the first and second outer substrates are as described above.
  • the polarizing layer (20), the adhesive film (40) and the outer substrate (30) are arranged in the above order, and the active liquid crystal layer (10) and the polarizing layer (20) are also disposed on the side of the laminate (40).
  • an optical device as shown in FIG. 11 When heated/pressurized by an autoclave process, an optical device as shown in FIG. 11 can be formed.
  • the conditions of the autoclave process are not particularly limited, and for example, it can be carried out under an appropriate temperature and pressure depending on the type of adhesive film applied.
  • the temperature of the normal autoclave process is about 80 O C or higher, It is not less than 90 O C or more than 100 O C, and the pressure is more than 2 atm, but it is not limited thereto.
  • the upper limit of the process temperature is about 200 O C or less, 190 O C or less, 180 O C or less, or 170 O C or less
  • the upper limit of the process pressure may be about W atm or less, 9 atm or less, 8 atm or less, 7 atm or less, or 6 atm or less.
  • Optical devices as described above can be used for various purposes, for example, sunglasses, AR (Argumented Reality) or VR (Virtual Reality).
  • the optical device may itself be a vehicle charter roof.
  • the optical device mounted on the opening or a sunroof for a vehicle may be mounted and used.
  • a substrate having a smaller radius of curvature that is, a substrate having a larger curvature, among them may be arranged in the direction of gravity.
  • a sunroof is a fixed or actuating (venting or sliding) opening in the vehicle's ceiling, which is a collective term for a device that can function to allow light or fresh air to flow into the vehicle's interior.
  • the method of operation of the sunroof is not particularly limited, for example, it can be operated manually or it can be driven by a motor, and the shape, size or style of the sunroof may be appropriately selected according to the intended application.
  • the sunroof is a pop-up type sunroof, spoiler open & out type sunroof, in-built type sunroof, folding type sunroof, top-mount type sunroof, panoramic Roof system type sunroof, removable Sunroof or solar type sunroof may be exemplified, but is not limited thereto.
  • the exemplary sunroof of this application may include the optical device of this application, and in this case, the details of the optical device may be the same as those described in the section of the optical device.
  • This application provides an optical device capable of preventing defects such as short circuits even when external power is connected in an encapsulated structure.
  • 1 is a side view of an exemplary optical film.
  • 2 to 8 are views for explaining a form of formation of an electrode layer.
  • 9 to 11 are side views of exemplary optical devices.
  • the inside of the sealant 160 When the part where the light modulation layer (the 311 liquid crystal layer 130) is formed is called the inside of the sealant 160, a terminal is formed on the electrode layers 140 and 120 formed on the outside to form a second area, and then an insulating layer therebetween The insulating layer, The film was cut to an appropriate size and placed between the second areas to form.
  • Thermoplastic polyurethane adhesive film (thickness: about 0.38 111111, manufacturer: SHOWAS, product name: SHOW 3 ⁇ 4013 ⁇ 4 ⁇ ) was encapsulated to manufacture optical elements.
  • a glass substrate with a thickness of about 3111111 was used as the outer substrate.
  • a substrate having a radius of curvature of about 30 (the first outer substrate) and a substrate having a radius of curvature of about 00 (the second outer substrate) were used.
  • the layer, the adhesive film, and the second outer substrate were laminated in the above order, and the adhesive film was also placed on all sides of the optical film to produce a laminate (the second outer substrate compared to the first outer substrate in the direction of gravity. Arrangement). After that, the autoclave process was performed at a temperature of about 0° (: and a pressure of about 2 atmospheres) to manufacture an optical device.

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Abstract

본 출원은 광학 디바이스에 대한 것이다. 본 출원은, 캡슐화된 구조에서 외부 전원이 연결되었을 때도 단락 등의 불량을 예방할 수 있는 광학 디바이스를 제공한다.

Description

명세서
발명의 명칭 :광학디바이스
기술분야
[1] 본출원은 2019년 02월 25일자제출된대한민국특허출원
제 10-2019-0021757호에기초한우선권의이익을주장하며,해당대한민국 특허출원의문헌에개시된모든내용은본명세서의일부로서포함된다.
[2] 본출원은,광학디바이스에관한것이다.
배경기술
[3] 액정화합물을이용하여투과율을가변할수있도록설계된광학디바이스는 다양하게알려져있다.
[4] 예를들면,주로액정화합물인호스트물질 (host material)과이색성염료
게스트 (dichroic dye guest)의혼합물을적용한소위 GH(Guest host)방식을사용한 투과율가변장치가알려져있고,상기장치에서호스트물질로주로액정 화합물이사용된다.이러한투과율가변장치는, TV나모니터등의일반 디스플레이장치는물론선글라스나안경등의아이웨어 (eyewear),건물외벽 또는차량의선루프등을포함한다양한용도에적용되고있다.
발명의상세한설명
기술적과제
[5] 광학디바이스의용도의확대를위해서광학필름을캡슐화제등을통해
캡슐화된구조를고려할수있다.이러한구조의경우,캡슐화제에의한 캡슐화에의해광학필름에일정수준의압력이가해질수있다.광학필름이 서로대향하는전극층을포함하는구조인경우에실제이격되어존재하여야 하는상기전극층이상기압력에의해적어도일부가서로접촉될수있고, 이러한경우에광학디바이스의구동에문제를일으킬수있다.따라서,본 출원은,상기와같은문제를해결할수있는광학디바이스를제공하는것을 하나의목적으로한다.
과제해결수단
[6] 이하,첨부된도면등을참조하여본출원을상세히설명한다.첨부된도면은본 출원의 예시적인실시형태를도시한것으로,이는본출원의이해를돕도록하기 위해제공된다.첨부된도면에서,각층및영역을명확하게표현하기위해 두께는확대하여나타낸것일수있고,도면에표시된두께,크기및비율등에 의해본출원의범위가제한되는것은아니다.
[7] 본명세서에서언급하는물성중에서측정온도나,압력이결과에영향을
미치는경우에특별히달리규정하지않는한,해당물성은상온과상압에서 측정한것이다.
[8] 본명세서에서용어 「상온」 은,가온하거나감은하지않은자연그대로의 2020/175795 1»（：1/10公020/000665 온도로서,일반적으로약 10OC내지 30OC의범위내의어느한온도,약 23OC또는 약 25OC정도의온도일수있다.
[9] 본명세서에서용어 「상압」 은,특별히줄이거나,높이지않은자연그대로의 압력으로서,일반적으로대기압과같은 1기압정도의압력을의미한다.
[1이 본출원은광학디바이스에관한것이다.상기광학디바이스는광학필름을 포함할수있다.도 1은예시적인본출원의광학필름을도시한그림이다.도 1을 참고하면,본출원의광학필름은대향배치된제 1기재필름 (110)과제 2기재 필름 (150),상기제 1및제 2기재필름 (110, 150)사이에존재하는
광변조층 (130)을포함할수있다.상기에서상기제 1및제 2기재필름 (no,
150)의서로대향하는면에는각각제 1및제 2전극층 (120, 140)이형성되어 있을수있다.
[11] 기재필름으로는,예를들면,유리등으로되는무기필름또는플라스틱필름 등이사용될수있다.플라스틱필름으로는, TAC(triacetyl cellulose)필름;
노르보르넨유도체등의 C0P(cyclo olefin copolymer)필름; PMMA(poly(metiyl methacrylate)등의 크릴필름; PC(polycarbonate)필름; PE(polyethylene)필름; PP(polypropylene)필름; PVA(poly vinyl alcohol)필름; DAC(diacetyl cellulose) 필름; Pac(Polyacrylate)필름; PES(poly ether sulfone)필름;
PEEK(polyetheretherketon)필름; PPS(polyphenylsulfone)필름, PEI(polyetherimide) 필름; PEN(polyethylenemaphthatlate)필름; PET (poly ethy leneterephtalate)필름; Pl(polyimide)필름; PSF(polysulfone)필름; PAR(polyarylate)필름또는불소수지 필름등이사용될수있지만,이에제한되는것은아니다.기재필름에는,필요에 따라서금,은,이산화규소또는일산화규소등의규소화합물의코팅층이나, 반사방지층등의코팅층이존재할수도있다.
[12] 기재필름으로는,소정범위의위상차를가지는필름이사용될수있다.일
예시에서상기기재필름은정면위상차가 100 nm이하일수있다.상기정면 위상차는다른예시에서약 95 nm이하,약 90 nm이하,약 85 nm이하,약 80 nm 이하,약 75 nm이하,약 70 nm이하,약 65 nm이하,약 60 nm이하,약 55 nm이하, 약 50 nm이하,약 45 nm이하,약 40 nm이하,약 35 nm이하,약 30 nm이하,약 25 nm이하,약 20 nm이하,약 15 nm이하,약 10 nm이하,약 5 nm이하,약 4 nm 이하,약 3 nm이하,약 2 nm이하,약 1 nm이하또는약 0.5 nm이하일수있다. 상기정면위상차는다른예시에서약 0 nm이상,약 1 nm이상,약 2 nm이상,약 3 nm이상,약 4 nm이상,약 5 nm이상,약 6 nm이상,약 7 nm이상,약 8 nm이상, 약 9 nm이상,또는약 9.5 nm이상일수있다.
[13] 기재필름의두께방향위상차의절대값은,예를들면, 200 nm이하일수있다. 상기두께방향위상차의절대값은다른예시에서 190 nm이하, 180 nm이하, 170 nm이하， 160 nm이하， 150 nm이하， 140 nm이하， 130 nm이하， 120 nm이하， 110 nm이하, 100 nm이하, 90 nm이하, 85 nm이하, 80 nm이하, 70 nm이하, 60 nm 이하, 50 nm이하, 40 nm이하, 30 nm이하, 20 nm이하, 10 nm이하, 5 nm이하, 4 2020/175795 1»（：1/10公020/000665 !!이하, 3 ]!이하, 2 ]!이하, 1 ]!이하또는 0.5 ]!이하일수있고, 0 ]!이상, 10 !!이상, 20 !!이상, 30 !!이상, 40 !!이상, 50 !!이상, 60 !!이상, 70 !! 이상또는 75 11111이상일수있다.상기두께방향위상차는절대값이상기범위 내라면음수이거나,양수일수있으며,예를들면,음수일수있다.
[14] 본명세서에서용어 「정면위상차 )」 는,하기 일반식 1로계산되는
수치이고,용어 「두께방향위상차 (¾¾」 는,하기 일반식 2로계산되는 수치이며,특별히 달리규정하지 않는한,상기 정면및두께방향위상차의기준
Figure imgf000004_0002
[19] 일반식 1및 2에서 (1는기재필름의두께이고, 1«는기재필름의지상축방향의 굴절률이며, 는기재필름의 진상축방향의굴절률이고, 는기재필름의두께 방향의굴절률이다.
[2이 기재필름이 광학이방성인경우에 대향배치되어 있는기재필름들의
지상축들이 이루는각도는,예를들면,약 0도내지 도의 범위내, - 7도내지 7도의 범위내, - 5도내지 5도의 범위내또는 - 3도내지 3도의범위 내이거나대략 평행할수있다.또한,상기 기재필름의지상축과후술하는편광층의광 흡수축이 이루는각도는,예를들면,약 0도내지 도의 범위내, - 7도내지 7도의 범위내, - 5도내지 5도의 범위내또는 - 3도내지 3도의범위 내이거나대략 평행할수있거나,혹은약 80도내지 100도의 범위내,약 83도내지 97도의범위 내,약 85도내지 95도의범위 내또는약 87도내지 92도의 범위내이거나대략 수직일수있다.
[21] 상기와같은위상차조절또는지상축의 배치를통해서 광학적으로우수하고 균일한투과및차단모드의구현이가능할수있다.
[22] 기재필름은,열팽창계수가 100 있다.상기 열팽창계수는, 다른여'!시어'!서 95 ppm/K이하·, 90
Figure imgf000004_0001
m/K이하·, 80 ppm/K이하·, 75 ppm/K이하, 70 ppm/K이하또는 65 ppm/K이하이거나, 10 ppm/K이상, 20 ppm/K 이상, 30 ppm/K이상, 40 ppm/K이상, 50 ppm/K이상또는 55 ppm/K이상일수 있다.기재필름의 열팽창계수는,예를들면,쇼 ^1 0696의규정에 따르측정할 수있고,해당규격에서 제공하는형태로필름을재단하고,단위온도당길이의 변화를측정하여 열팽창계수를계산할수있으며, TMA(ThemloMechanic 쇼 切 등의 공지의방식으로측정할수있다.
[23] 기재필름으로는,파단신율이 90%이상인기재필름을사용할수있다.상기 파단신율은 95%이상, 100%이상, 105%이상, 110%이상, 115%이상, 120% 이상, 125%이상, 130%이상, 135%이상, 140%이상, 145%이상, 150%이상,
155%이상, 160%이상, 165%이상, 170%이상또는 175%이상일수있고, 1,000%이하, 900%이하, 800%이하, 700%이하, 600%이하, 500%이하, 400% 이하, 300%이하또는 200%이하일수있다.기재필름의파단신율은 ASTM D882규격에따라측정할수있고,해당규격에서제공하는형태로필름을 재단하고, Stress-Strain curve를측정할수있는장비 (힘과길이를동시에측정할 수있는)를이용하여측정할수있다.
[24] 기재필름이상기열팽창계수및/또는파단신율을가지도록선택되는것에 의해보다우수한내구성의광학디바이스가제공될수있다.
[25] 상기광학필름에서기재필름의두께는특별히제한되지않으며,통상적으로
Figure imgf000005_0001
200 /ffli정도의범위내일수있다.
[26] 본명세서에서상기제 1전극층이형성되어있는제 1기재필름을제 1전극 기재필름이라지칭하고,상기제 2전극층이형성되어 있는제 2기재필름을제 2전극기재필름이라지칭할수있다.
[27] 상기전극기재필름은,예를들면가시광영역에서투광성을가질수있다. 하나의 예시에서 ,전극기재필름은가시광영역 ,예를들면,약 400 nm내지 700 nm범위내의어느한파장또는 550 nm파장의광에대한투과도가 80%이상, 85%이상또는 90%이상일수있다.상기투과도는그수치가높을수록유리한 것으로그상한은특별히제한되지않으며,예를들면,약상기투과도는약 100% 이하또는 100%미만정도일수도있다.
[28] 전극기재필름상에형성되는전극층의소재는특별히제한되지않으며,광학 디바이스분야에서전극층을형성하는것에적용되는소재라면특별한제한 없이이용될수있다.
[29] 예를들면,전극층으로는,금속산화물;금속와이어;금속나노튜브;금속
메쉬;탄소나노튜브;그래핀;또는전도성폴리머나이들의복합재료등을 이용하여형성되는전극층이적용될수있다.
[3이 하나의예시에서 ,전극층으로는,안티몬 (Sb),바륨 (Ba),갈륨 (Ga),게르마늄 (Ge), 하프늄 (Hf),인듐 (In),란티늄 (La),마그네슘 (Mg),셀렌 (Se),알루미늄 (A1), 규소 (Si),탄탈 (Ta),티타늄 (Ti),바나듐 (V),이트륨 (Y),아연 (Zn)및
지르코늄 (Zr)으로이루어진군으로부터선택되는 1종이상의금속을포함하는 금속산화물층이이용될수있다.
[31] 전극층의두께는본출원의목적을손상시키지않는범위내에서적절히
선택될수있다.통상적으로전극층의두께는 50 nm내지 300 nm의범위내또는 70nm내지 200 nm범위내일수있지만,이에제한되는것은아니다.전극층은, 전술한소재로되는단층구조이거나,또는적층구조일수있고,적층구조일 경우,각층을구성하는소재는동일하거나,또는상이할수있다.
[32] 상기전극기재필름은,상기제 1및제 2기재필름상에상기전극층을
형성하여얻을수있다.
[33] 본출원에서상기전극층은,광변조층에외부에너지에해당하는전계를
인가하는부위 (이하,제 1영역으로호칭할수있다.)와상기전계를인가할수 2020/175795 1»（：1^1{2020/000665 있도록상기전극층을외부전원과연결하는부위 (이하,제 2영역으로호칭할수 있다.)를포함할수있다.상기 2개의부위는서로물리적으로분리된부위혹은 물리적으로연속되어있는부위이거나,또는실질적으로서로중복되어 있는 부위일수도있다.통상적으로상기제 1영역은,대략적으로광학디바이스의 구조에서상기광학디바이스를그표면의법선방향을따라서관찰할때에 광변조층과중복되는영역이고,제 2영역은외부단자등이형성된영역일수 있다.
[34] 본출원의하나의예시에서상기제 1기재필름 ( 0)상의전극층 (120)의제 2 영역과상기제 2기재필름 (150)상의전극층 (140)의제 2영역은서로마주하지 않도록배치될수있으며,이에따라서상기제 1기재필름 ( 0)과제 2기재 필름 (150)은서로엇갈리도록광학필름에포함되어 있을수있다.이러한경우를 본출원의제 1태양이라고부를수있다.
[35] 도 2는이와같은상태의광학필름의측면모식도이다.도 2와같이기재
필름 (110, 150)을서로엇갈리게배치함으로써,그표면에각각형성된상기 전극층 (120, 140)도서로엇갈리게되고,제 1기재필름 (110)상의전극층 (120) 중에서제 2기재필름 (150)상의전극층 (140)과마주보지않는면상의
전극층 (예를들면,도 3의 200으로표시된영역내의전극층 (120))면에단자등을 형성하여상기제 2영역을형성하고,동일하게제 2기재필름 (150)상의 전극층 (140)중에서제 1기재필름 ( 0)상의전극층 (120)과마주보지않는 면상의전극층 (예를들면,도 3의 200으로표시된영역내의전극층 (140))에단자 등을형성하여상기제 2영역을형성하여상기구조를도출할수있다.도 2의 구조는서로마주하지않는제 2영역을형성하기위한기재필름들의배치의일 예시이며,동일한목적이달성된다면,도 2및 3의구조외에도다양한구조가 적용될수있다.또한,도 2및 3의구조와같은경우에기재필름을서로 엇갈리게배치하는정도 (예를들면,도 3에서 200으로표시되는영역의길이)는 특별한제한이없으며,광변조층 (130)에요구되는면적이나,단자를형성하기 위해요구되는면적등을고려하여적정하게서로엇갈린배치를채택하면된다.
[36] 광학필름은,상기제 1및제 2기재필름 (110, 150)을서로부착시키고있는 실런트 (160)를추가로포함할수있는데,이러한경우에상기실런트 (160)는, 도면과같이제 1기재필름 ( 0)상의제 1및제 2영역의경계와상기제 1기재 필름 ( 0)의적어도한면의가장외측부위에존재하고,또한상기제 2기재 필름 (150)상의제 1및제 2영역의경계와상기제 2기재필름 (150)의적어도한 면의가장외측에존재하는상태로상기제 1및제 2기재필름을부착시키고 있을수있다.
[37] 다른예시에서상기전극층은패턴화되어있을수있다.예를들면,본출원에서 각각의전극층의제 2영역은,상기제 1영역과전기적으로연결된영역쇼와 상기제 1영역과전기적으로연결되지않은영역 6로패턴화되어 있을수있다. 즉,영역쇼가외부전원과연결되면,제 1영역으로전류가흐르지만,영역 6가 2020/175795 1»（：1^1{2020/000665 외부전원과연결되면,제 1영역으로전류가흐르지 않는다.이러한경우에 제 1 기재필름상에 형성된상기 영역쇼와제 2기재필름상에 형성된상기 영역쇼는 서로대향하지 않도록배치되어 있을수있다.이러한경우를본출원의제 2 태양이라고부를수있다.
[38] 또한,이러한경우에 제 2영역은제 1영역을둘러싸도록형성되어 있을수
있다.
[39] 또한,이러한경우에 제 1및제 2기재필름을서로부착시키고있는상기
실런트는,기재필름의제 1및제 2영역의경계에존재하면서상기 제 1및제 2 기재필름을부착시키고있을수있다.
[4이 이하상기와같은전극층의 형태를도면을참조하여 예시적으로설명한다.도 4 및 5는제 1및제 2기재필름에 각각형성되어 있는전극층의 예시이다.다만,본 출원에서 형성되는전극층의 형태는도 4및 5에제시된구조에제한되는것은 아니다.
[41] 도 4는,제 1및제 2기재필름상에 각각형성된전극층중에서 어느한
전극층의 예시이고,도 5는,다른전극층의 예시일수있다.본출원의광학필름 내에서의 전극층의 배치를구체적으로설명하기 위해서도 4는,기재필름상에 형성된전극층을상기 전극층이 형성된면측에서 관찰한것이고,도 5는기재 필름상에 형성된전극층을상기기재필름의 전극층이 형성되지 않은면에서 투시하여도시한것이다.
[42] 도 4및 5는전극층이 대향배치될때 어떠한식으로배치가되는지를설명하기 위하여상술한것과같이도시되었다.
[43] 도 4및 5에도시한것과같이,전극층은복수의 격실구조및적어도하나의 통로구조를포함할수있다.본출원에서 전극층의 격실구조는기재필름상에 형성된전극단위를의미할수있으며,상기격실구조및다른격실구조는 후술할통로구조가없다면서로전기적으로완전히 연결되어 있지 않은단위를 지칭할수있다.예를들면,도 4및 5에도시한격실구조 (121, 122, 141, 142)를들 수있다.본출원에서 전극층의 「통로구조」 는상술한격실구조중두개의 격실구조를전기적으로서로연결하는요소를지칭할수있다.상기통로 구조는,예를들면,도 4및 5에도시한통로구조 (123, 143)를지칭할수있다. 따라서,전극층에 외부전원을연결할경우,외부전원과직접 연결된격실 구조가 1차적으로대전되며,외부전원과연결된격실구조와통로구조를 통하여 전기적으로연결된격실구조가 2차적으로대전될수있다.상기에서 2차적으로대전되는격실구조가전술한제 1영역일수있으며, 1차적으로 대전되는격실구조가전술한영역쇼일수있다.예를들면,상기 격실구조 (121, 122, 141, 142)중통로구조 (123, 143)에의해다른격실과전기적으로연결되지 않은격실구조 (122, 142)에외부전원이 연결될경우,상기격실구조 (122, 142)만 대전될뿐,다른격실구조 (121, 141)는대전되지 않게된다.이러한격실 구조 (122, 142)는전술한영역 6일수있다.다른예시에서,상기격실구조중 2020/175795 1»（：1^1{2020/000665 통로구조로다른격실과전기적으로연결된격실구조 (121, 141)에 외부전원이 연결될경우,외부전원과직접적으로연결된격실구조 (121, 141)뿐만아니라 통로구조에의해 전기적으로연결된다른격실구조 (122, 142)또한대전되게 된다.
[44] 도 4및 5에도시한것처럼,본출원의 전극층 (120, 140)의복수의 격실구조 (121, 122, 125, 141, 142, 145)는상부또는하부에광변조층 (130)이 위치하는중앙 격실 (124, 144)을포함할수있다.이중앙격실은상기제 1영역일수있다.중앙 격실 (124, 144)구조의상부또는하부에광변조층 (130)이 위치한다는것은도
1에도시한것과같이제 1및제 2전극층 (120, 140)의상부또는하부에
광변조층 (130)이위치하고,특히 광변조층 (130)이제 1및 2전극층 (120, 140)의 중앙격실 (124, 144)의상부또는하부에위치하는것을의미할수있다.
[45] 도 6은상기중앙격실 (124, 144),상기주변격실 (121, 122, 125, 141, 142, 145)과 상기 광변조층 (130)의 위치관계를설명하기위해본출원의 예시적인광학 디바이스를구성하는구성요소를중첩하여그린그림으로,편의에따라일부 구성요소를투시또는중첩하여도시하였다.
[46] 도 6에도시한것과같이,광변조층 (130)은제 1및 2전극층 (120, 140)의중앙 격실 (124, 144)의상부또는하부에 위치할수있다.
[47] 본출원의 제 1및제 2전극층은상부또는하부에광변조층이 위치하지 않는 주변격실을포함할수있다.도 6에도시한것과같이,주변격실 (121, 125, 141, 145)은광변조층 (130)이상부또는하부에 위치하지 않는제 1및 2투과성 전극층의 격실구조를의미할수있다.
[48] 본출원의 제 1및제 2전극층의통로구조는중앙격실과적어도하나의주변 격실을전기적으로연결할수있다.상부또는하부에 광변조층이존재하는중앙 격실과주변격실을통로구조가전기적으로연결할경우,외부전원을주변 격실에 연결함으로써광변조층에 전계를인가할수있다.
[49] 상기제 1및제 2전극층은광변조층을어느하나의 전극층의 대전영역에
투영하였을때,투영된광변조층의 면적과중첩되지 않는대전영역이나머지 하나의 전극층의 대전영역과중첩되지 않도록형성될수있다.
[5이 하나의 예시에서,제 1및제 2전극층 (120, 140)이 각각도 4및 5에도시한것과 같이 형성될수있다.상기도 4및 5에도시한제 1및제 2전극층 (120, 140)의 대전영역이상술한조건을만족하기 위해서는,예를들면,상기 전극층 (120,
140)이도 6에도시한것과같은방식으로적층되어야한다.
[51] 도 6은상술한것과같이제 1및제 2전극층 (120, 140)은광변조층 (130)을어느 하나의 전극층 (120, 140)의 대전영역에투영하였을때,투영된광변조층 (130)의 면적과중첩되지 않는대전영역이 나머지하나의 전극층 (120, 140)의 대전 영역과중첩되지 않도록형성된것을보여주기위한도면이다.도 6는도 1에 도시한광학디바이스의 제 2기재필름 (150)으로부터광학디바이스를관찰하여 그린그림으로,설명의편의를위해구성요소들의 일부를투시하여중첩되도록 2020/175795 1»（：1^1{2020/000665 도시하였다.
[52] 상기예시에서,도 6에도시한제 1및제 2전극층 (120, 140)에외부전원이
연결될수있으며,예를들면,외부전원이격실구조 (121, 141)에연결될수있다. 제 1및제 2전극층 (120, 140)에상기와같이외부전원이연결될경우,도 4및
5에도시한격실구조및통로구조를참고할때,제 1전극층 (120)의격실 구조 (121, 124, 125)와제 2전극층 (140)의격실구조 (141, 144, 145)가대전되어 대전영역을형성하게된다.따라서 ,상기예시에서도 6을참고하면,
광변조층 (130)을제 1전극층 (120)의대전영역 (121, 124, 125)에투영하였을때 투영된광변조층 (130)의면적과중첩되지않는대전영역 (121, 125)이제 2 전극층 (140)의대전영역 (141, 144, 145)을제 1전극층 (120)에투영한면적과 중첩되지않게된다.상기와같이전극층을형성함으로써,전극층에외부전원을 연결하였을때전극층이서로접촉하여도단락현상이일어나지않게된다.
[53] 도 7은본출원의광학디바이스가단락현상을예방하는원리를설명하기위한 그림이다.도 7은도 6에도시한격실구조 (121, 141)측에서바라본그림이다. 상술한예시에서격실구조 (121, 141)에외부전원이연결되었을경우,도 7에 도시한것처럼대전영역을구성하는격실구조 (121, 141)가투광성전극기재 필름 (110, 150)에압력이가해져도서로접촉하지않도록형성되어있으므로,본 출원의광학디바이스는제 1및제 2전극층 (120, 140)이서로접촉하여도단락 현상이발생하지않게된다.상기예시에서대전영역을구성하는격실
구조 (121)와접촉할수있는격실구조 (142)는도 5에도시한것과같이대전 영역과전기적으로연결되어 있지않고,대전영역을구성하는또다른격실 구조 (141)와접촉할수있는격실구조 (122)는도 4에도시한것과같이대전 영역과전기적으로연결되어 있지않기때문이다.
[54] 이상설명한전극층의예시에서전술한중앙격실은상기제 1영역이며,주변 격실이제 2영역이고,주변격실중에서중앙격실과전기적으로연결된격실이 영역쇼이고,중앙격실과전기적으로연결되지않은격실이영역 6일수있다.
[55] 도 6및 7과같은배치를통해서제 1기재필름상의영역쇼와제 2기재
필름상의영역쇼가서로대향하지않도록배치된디바이스가구현될수있다.
[56] 그렇지만,도 4내지 7에나타난구조는본출원의광학필름을구현할수있는 일예시이다.
[57] 이와같은전극층의패턴은전극층을패턴형성하거나,혹은전극층을일단 형성한후에적절한수단 (예를들면,레이저패턴화방식등)을적용하여 전극층을패턴화하여형성할수있다.
[58] 또다른예시에서상기전극층의제 1및제 2영역은상기본출원의제 1
태양에서와같이형성되어 있으면서 ,각각이서로대향하도록배치되어 있을 수도있다.즉,이러한경우에상기제 1기재필름상의상기제 2영역과상기제 2기재필름상의상기제 2영역은서로대향배치되어있을수있는데,이러한 경우에는절연층이존재할수있다.이러한경우를본출원의제 3태양이라고 부를수있다·
[59] 도 8은이러한경우를예시적으로보여주고있으며,도 8과같이각전극층 (140, 120)의제 2영역의사이에는절연층 (170)이존재한다.도 8은,예시적인 형태이고,필요하다면,각전극층에제 2영역이복수형성되어 있고,이들이 대향배치된상태에서그사이에절연층이존재할수도있다.
[6이 즉,예를들면,기재필름을표면상에서상기제 2영역은상기제 1영역을
둘러싸도록형성되어있을수도있고,이러한경우에절연층은각제 2영역의 사이에존재할수있다.또한,이러한구조에서제 1및제 2기재필름을서로 부착시키고있는실런트 (도 8의 160)를추가로포함하며 ,상기실런트는,기재 필름의제 1및제 2영역의경계에존재하면서상기제 1및제 2기재필름을 부착시키고있을수있다.
[61] 상기와같은구조에서절연층의소재로적용될수있는재료의종류는특별히 제한되지않는다.즉,업계에서일반적으로절연층으로적용될수있는것으로 알려진다양한무기,유기또는유무기복합소재가상기절연층으로사용될수 있다.또한,본출원에서이러한절연층을형성하는방식도공지된내용에 따른다.
[62] 통상절연재료로는, ASTM D149에준거하여측정한절연파괴전압이약 3 kV/mm이상,약 5 kV/mm이상,약 7 kV/mm이상, 10 kV/mm이상, 15 kV/mm 이상또는 20 kV/mm이상인소재가사용된다.상기절연파괴전압은그수치가 높을수록우수한절연성을보이는것으로특별히제한되는것은아니나,약 50 kV/mm이하, 45 kV/mm이하, 40 kV/mm이하, 35 kV/mm이하, 30 kV/mm이하일 수있다.
[63] 예를들면,유리 ,알루미나, ZnO, AlN(aluminum nitride), BN(boron nitride),질화 규소 (silicon nitride), SiC또는 BeO등과같은세라믹소재 ,폴리올레핀,폴리염화 비닐,각종고무계폴리머,폴리에스테르,아크릴수지또는에폭시수지등의 고분자소재등이상기절연층으로적용될수있다.
[64] 본출원에서는상기와같은구성을통해서외부전원이연결되었을때단락을 예방할수있는광학디바이스의구조를제공할수있다.
[65] 본출원의광학필름은,상기와같은형태로전극층이각각형성되어있는제 1 및제 2기재필름의사이 (즉,적어도전극층의제 1영역의사이)에광변조층을 포함할수있다.이러한광변조층은,일예시에서적어도액정화합물을가지는 능동액정층일수있다.용어능동액정층은,액정화합물을포함하는층이고, 외부에너지를통해상기액정화합물의배향상태를변경할수있는층을 의미할수있다.상기능동액정층을이용해서 ,광학디바이스는투과모드와 차단모드를포함한다양한모드들의사이를선택적으로스위칭할수있고, 따라서상기능동액정층은광변조층이될수있다.
[66] 본명세서에서용어투과모드는투과율이약 10%이상,약 15%이상,약 20% 이상,약 25%이상, 30%이상,약 35%이상,약 40%이상,약 45%이상또는약 2020/175795 1»（：1^1{2020/000665
50%이상인상태를의미할수있다.또한,차단모드는,투과율이 약 20%이하,약 15%이하,약 10%이하또는약 5%이하정도인상태를의미할수있다.상기 투과모드에서의투과율은수치가높을수록유리하고,차단모드에서의 투과율은낮을수록유리하기 때문에각각의상한과하한은특별히제한되지 않는다.일 예시에서상기투과모드에서의투과율의상한은약 100%,약 95%,약 90%,약 85%,약 80%,약 75%,약 70%,약 65%또는약 60%일수있다.상기차단 모드에서의투과율의하한은약 0%,약 1%,약 2%,약 3%,약 4%,약 5%,약 6%, 약 7%,약 8%,약 9%또는약 일수있다.
[67] 상기투과율은직진광투과율일수있다.용어 직진광투과율은소정방향으로 광학디바이스를입사한광대비상기 입사방향과동일한방향으로상기 광학 디바이스를투과한광（직진광）의비율일수있다.일 예시에서상기투과율은, 상기 광학디바이스의표면법선과평행한방향으로입사한광에 대하여측정한 결과（법선광투과율）일수있다.
[68] 광학디바이스에서투과율이조절되는광은, 1八^-쇼영역의자외선,가시광또는 근적외선일수있다.일반적으로사용되는정의에 따르면, 1八^-쇼영역의 자외선은 320 11111내지 380 11111의범위 내의파장을갖는방사선을의미하는 것으로사용되고,가시광은 380 11111내지 780 11111의 범위내의 파장을갖는 방사선을의미하는것으로사용되며,근저외선은 780 11111내지 2000 11111의 범위 내의 파장을갖는방사선을의미하는것으로사용된다.
[69] 본명세서에서용어외부에너지는,상기능동액정층내에포함되어 있는액정 화합물의 배향을변화시킬수있을정도의수준으로외부에서 인가되는 에너지를의미한다.일예시에서 ,상기 외부에너지는상기 전극층을통해 유도되는외부전압에 의해생성된전계일수있다.
이 예를들면,능동액정층은액정 화합물의 배향상태가상기 외부에너지의 인가 여부,그크기 및/또는인가위치등에의해 변화하면서상술한투과모드와차단 모드의사이를스위칭하거나,기타모드의사이를스위칭할수있다.
1] 일예시에서상기능동액정층은,소위 게스트호스트액정층으로불리우는 액정층일수있으며,이러한경우에는상기 능동액정층은,상기 액정화합물과 함께 이방성 염료를추가로포함할수있다.게스트호스트액정층은,소위 게스트호스트
Figure imgf000011_0001
층으로서 ,상기 액정 화합물（이하,액정호스트라칭할수있다）의 배향방향에따라상기 이방성 염료가정렬되는액정층이다.상기 액정호스트의 배향방향은배향막및/또는 전술한외부에너지를사용하여조절할수있다.
2] 액정층에사용되는액정호스트의종류는특별히 제한되지 않고,게스트
호스트효과의구현을위해적용되는일반적인종류의 액정화합물이사용될수 있다.
3] 예를들면,상기 액정호스트로는,스멕틱 액정화합물,네마틱 액정화합물 또는콜레스테릭 액정 화합물이사용될수있다.일반적으로는네마틱 액정 화합물이사용될수있다.용어네마틱 액정화합물은,액정분자의위치에대한 규칙성은없지만,모두분자축방향으로질서를가지고배열할수있는액정 화합물을의미하고,이러한액정화합물은막대 (rod)형태이거나원반 (discotic) 형태일수있다.
4] 이러한네마틱 액정화합물은예를들면,약 40OC이상,약 50OC이상,약 60OC 이상,약 70OC이상,약 80OC이상,약 90OC이상,약 100°C이상또는약 110OC 이상이상의등명점 (clearing point)를가지거나,상기범위의상전이점 ,즉 네마틱상에서등방상으로의상전이점을가지는것이선택될수있다.일 예시에서상기등명점또는상전이점은약 160OC이하,약 150OC이하또는약 140OC이하일수있다.
5] 상기액정화합물은,유전율이방성이음수또는양수일수있다.상기유전율 이방성의절대값은목적을고려하여적절히선택될수있다.예를들면,상기 유전율이방성은 3초과또는 7초과이거나, -2미만또는 -3미만일수있다. 6] 액정화합물은또한약 0.01이상또는약 0.04이상의광학이방성 (ᅀ n)을가질 수있다.액정화합물의광학이방성은다른예시에서약 0.3이하또는약 0.27 이하일수있다.
7] 게스트호스트액정층의액정호스트로사용될수있는액정화합물은본기술 분야에서공지되어있다.
8] 액정층이상기게스트호스트액정층인경우에상기액정층은상기액정
호스트와함께이방성염료를포함할수있다.용어 「염료」 는,가시광영역 , 예를들면, 380 nm내지 780 nm파장범위내에서적어도일부또는전체범위 내의광을집중적으로흡수및/또는변형시킬수있는물질을의미할수있고, 용어 「이방성염료」 는상기가시광영역의적어도일부또는전체범위에서 광의이방성흡수가가능한물질을의미할수있다.
9] 이방성염료로는,예를들면,액정호스트의정렬상태에따라정렬될수있는 특성을가지는것으로알려진공지의염료를선택하여사용할수있다.예를 들면,이방성염료로는,아조염료또는안트라퀴논염료등을사용할수있고, 넓은파장범위에서의광흡수를달성하기위해서 액정층은 1종또는 2종이상의 염료를포함할수도있다.
[8이 이방성염료의이색비 (dichroic ratio)는목적을고려하여적절히선택될수 있다.예를들어 ,상기이방성염료는이색비가 5내지 20의범위내일수있다. 용어 「이색비」 는,예를들어, p형염료인경우,염료의장축방향에평행한 편광의흡수를상기장축방향에수직하는방향에평행한편광의흡수로나눈 값을의미할수있다.이방성염료는가시광영역의파장범위내 ,예를들면,약 380 nm내지 780 nm또는약 400 nm내지 700 nm의파장범위내에서적어도 일부의파장또는어느한파장또는전범위에서상기이색비를가질수있다.
[81] 액정층내에서의이방성염료의함량은목적을고려하여적절히선택될수 있다.예를들어 ,액정호스트와이방성염료의합계중량을기준으로상기 이방성염료의함량은 0.1내지 10중량%범위내에서선택될수있다.이방성 염료의비율은목적하는투과율과액정호스트에대한이방성염료의용해도 등을고려하여변경할수있다.
[82] 액정층은상기 액정호스트와이방성염료를기본적으로포함하고,필요한
경우에다른임의의첨가제를공지의형태에따라추가로포함할수있다.
첨가제의 예로는,키랄도펀트또는안정화제등이예시될수있지만,이에 제한되는것은아니다.
[83] 상기액정층의두께는,예를들면,목적하는모드구현에적합하도록적절히
Figure imgf000013_0001
이상, 7[xm이상, 7.5[xm이상, 8[xm이상, 8.5[xm이상, 9[xm이상또는 9.5[xm이상일 수있다.상기액정층의두께의상한은특별히제한되는것은아니며,
일반적으로약 30 [xm이하, 25 [xm이하, 20 [xm이하또는 15 [xm이하일수있다.
[84] 상기와같은능동액정층또는이를포함하는상기광학필름은,제 1배향
상태와상기제 1배향상태와는다른제 2배향상태의사이를스위칭할수있다. 상기스위칭은,예를들면,전압과같은외부에너지의인가를통해조절할수 있다.예를들면,전압무인가상태에서상기제 1및제 2배향상태중에서어느 한상태가유지되다가,전압인가에의해다른배향상태로스위칭될수있다.
[85] 상기제 1및제 2배향상태는,일예시에서 ,각각수평배 ¾수직배 ¾
스프레이배향,경사배향,트위스트네마틱배향또는콜레스테릭배향 상태에서선택될수있다.예를들면,차단모드에서액정층또는광학필름은, 적어도수평배향,트위스트네마틱배향또는콜레스테릭배향이고,투과 모드에서 액정층또는광학필름은,수직배향또는상기차단모드의수평 배향과는다른방향의광축을가지는수평배향상태일있다.액정소자는,전압 무인가상태에서상기차단모드가구현되는통상차단모드 (Normally Black Mode)의소자이거나,전압무인가상태에서상기투과모드가구현되는통상 투과모드 (Normally Transparent Mode)를구현할수있다.
[86] 위와같은능동액정층은다양한모드를가질수있다.능동액정층은,예를
들어 ,전압제어복굴절 (ECB: Electrically Controlled Birefringence)모드, 트위스티드네마틱 (TN: Twisted Nematic)모드또는슈퍼트위스티드
네마틱 (STN: Super Twisted Nematic)모드로구동될수있으나,이에제한되는 것은아니며,이러한능동액정층의구동모드에따라능동액정층내액정 화합물의정렬특성이달라질수있다.
[87] 하나의예시에서 ,능동액정층의하나의배향상태에서 액정화합물은
후술하는편광층의흡수축과어느하나의각도를이루도록배향된상태로 존재하거나,편광층의흡수축과수평또는수직을이루도록배향된상태로 존재하거나,또는트위스티드배향된상태로존재할수있다. [88] 본명세서에서용어 「트위스티드배향된상태」 는,능동액정층의광축이 능동액정층의평면에대하여,약 0도내지 15도,약 0도내지 W도,약 0도내지 5도범위내의경사각을가지고수평배향되어있으나,능동액정층에포함되어 있는이웃하는액정화합물의장축방향의각도는조금씩변하여비틀어져 배열되어 있는상태를의미할수있다.
[89] 전술한바와같이,능동액정층내액정화합물은외부작용의인가에의하여 정렬특성이변경될수있다.
[9이 하나의예시에서,외부작용이없는상태에서 ,능동액정층이수평배향인경우 외부작용의인가에의하여수직배향상태로스위칭함으로써투과도를높일수 있다.
[91] 다른예시에서,외부작용이없는상태에서 ,능동액정층이수직배향인경우 외부작용의인가에의하여수평배향상태로스위칭함으로써투과도를 감소시킬수있다.또한,초기수직배향상태에서수평배향상태로스위칭함에 있어서,액정화합물의배향방향을결정하기위하여일정방향의프리틸트 (Pre Tilt)가필요할수있다.상기에서프리틸트를부여하는방식은특별히제한되지 않고,예를들어의도하는프리틸트를부여할수있도록적절한배향막을 배치하는것에의하여가능하다.
[92] 또한,상기에서능동액정층이이방성염료를추가로포함하고액정화합물이 수직배향된상태에서는,이방성염료의정렬방향이하부에존재하는편광층의 평면에대하여수직을이루므로편광층을투과한광이능동액정층의이방성 염료에흡수되지않고투과될수있고,이를통해광학디바이스의투과도를 증가시킬수있다.반면,능동액정층의액정화합물이수평배향된상태에서는, 이방성염료의정렬방향이하부에존재하는편광층의평면에대하여평행을 이루고있으므로,능동액정층의광축이편광층의흡수축에대하여소정의 각도를가지도록배치하는경우,편광층을투과한광의일부를이방성염료에 흡수시킬수있고,이를통해광학디바이스의투과도를감소시킬수있다.
[93] 하나의예시에서 ,광학디바이스는외부작용이존재하는상태에서 ,가시광 영역의투과도가 15%이상인투과모드가구현되고,외부작용이존재하지않는 상태에서,가시광영역의투과도가 3%이하인차단모드가구현될수있다.
[94] 능동액정층이 TN모드또는 STN모드로구동하는경우,능동액정층은
키랄제 (chiral agent)를추가로포함할수있다.키랄제는상기 액정화합물 및/또는이방성염료의분자배열이나선구조를갖도록유도할수있다.상기 키랄제로는,액정성,예를들면,네마틱규칙성을손상시키지않고,목적하는 나선구조를유발할수있는것이라면,특별히제한되지않고사용될수있다. 액정에나선구조를유발하기위한키랄제는분자구조중에
키랄리티 (chirality)를적어도포함할필요가있다.키랄제로는,예를들면, 1개 또는 2개이상의비대칭탄소 (asy mmetric carbon)를가지는화합물,키랄아민 또는키랄술폭시드등의헤테로원자상에비대칭점 (asy mmetric point)이 있는 화합물또는쿠물렌 (cumulene)또는비나프톨 (binaphthol)등의죽부제를가지는 광학활성인부위 (axially asy mmetric optically active site)를가지는화합물이 예시될수있다.키랄제는예를들면분자량이 1,500이하인저분자화합물일수 있다.키랄제로는,시판되는키랄네마틱 액정 ,예를들면, Merck사에서시판되는 키랄도판트액정 S-811또는 BASF사의 LC756등을사용할수도있다.
[95] 액정층의배향상태에서해당액정층의광축이어떤방향으로형성되어있는 것인지를확인하는방식은공지이다.예를들면,액정층의광축의방향은,광축 방향을알고있는다른편광판을이용하여측정할수있으며,이는공지의측정 기기,예를들면, Jascp사의 P-2000등의 polarimeter를사용하여즉정할수있다.
[96] 액정호스트의유전율이방성 ,액정호스트를배향시키는배향막의배향방향 등을조절하여상기와같은통상투과또는차단모드의 액정소자를구현하는 방식은공지이다.
[97] 상기광학필름은,상기 2장의기재필름의사이에서상기 2장의기재필름의 간격을유지하는스페이서및/또는대향배치된 2장의기재필름의간격이 유지된상태로상기기재필름을부착시키고있는상기실런트등을추가로 포함할수있다.상기스페이서및/또는실런트로는,특별한제한없이공지의 소재가사용될수있다.
[98] 광학필름에서상기기재필름의일면,예를들면,상기광변조층 (예를들면, 능동액정층)을향하는면상에는배향막이존재할수있다.예를들면,상기 전극층상에상기배향막이존재할수있다.
[99] 배향막은능동액정층과같은광변조층에포함되는액정호스트의배향을
제어하기위한구성이고,특별한제한없이공지의배향막을적용할수있다. 업계에서공지된배향막으로는,러빙배향막이나광배향막등이있다.
[10이 전술한광축의배향을달성하기위해서상기배향막의배향방향이제어될수 있다.예를들면,대향배치되어 있는 2장의기재필름의각면에형성된 2개의 배향막의배향방향은서로약 -10도내지 W도의범위내의각도, -7도내지 7도의범위내의각도, - 5도내지 5도의범위내의각도또는 - 3도내지 3도의범위 내의각도를이루거나서로대략평행할수있다.다른예시에서상기 2개의 배향막의배향방향은약 80도내지 100도의범위내의각도,약 83도내지 97도의범위내의각도,약 85도내지 95도의범위의각도내또는약 87도내지 92도의범위내의각도를이루거나서로대략수직일수있다.
[101] 이와같은배향방향에따라서능동액정층의광축의방향이결정되기때문에, 상기배향방향은능동액정층의광축의방향을확인하여확인할수있다.
[102] 광학디바이스는,상기광학필름과함께편광층을추가로포함할수있다.상기 편광층으로는,예를들면,흡수형편광층,즉일방향으로형성된광흡수축과 그와는대략수직하게형성된광투과죽을가지는편광증을사용할수있다.
[103] 상기편광층은,상기광학필름의제 1배향상태에서상기차단상태가
구현된다고가정하는경우에상기제 1배향상태의평균광축 (광축의벡터함)과 상기편광층의광흡수축이이루는각도가 80도내지 100도또는 85도내지 95도를이루거나,대략수직이되도록배치되어 있거나,혹은 35도내지 55도 또는약 40도내지 50도가되거나대략 45도가되도록배치되어있을수있다.
[104] 배향막의배향방향을기준으로할때에,전술한것과같이대향배치된광학 필름의 2장의기재필름의각면상에형성된배향막의배향방향이서로약
Figure imgf000016_0001
내지 W도의범위내의각도, -7도내지 7도의범위내의각도, -5도내지 5도의 범위내의각도또는 - 3도내지 3도의범위내의각도를이루거나서로대략 평행한경우에상기 2개의배향막중에서어느하나의배향막의배향방향과 상기편광층의광흡수축이이루는각도가 80도내지 100도또는 85도내지
95도를이루거나,대략수직이될수있다.
[105] 다른예시에서상기 2개의배향막의배향방향이약 80도내지 100도의범위 내의각도,약 83도내지 97도의범위내의각도,약 85도내지 95도의범위의 각도내또는약 87도내지 92도의범위내의각도를이루거나서로대략수직인 경우에는 2장의배향막중에서상기편광층에보다가깝게배치된배향막의 배향방향과상기편광층의광흡수축이이루는각도가 80도내지 100도또는 85도내지 95도를이루거나,대략수직이될수있다.
[106] 예를들면,상기광학필름과상기편광층는서로적층되어 있는상태일수
있다.또한,상기상태에서상기광학필름의제 1배향방향의광축 (평균광축)과 상기편광층의광흡수축이상기관계가되도록배치될수있다.
[107] 일예시에서상기편광층가후술하는편광코팅층인경우에는상기편광
코팅층이상기광학필름의내부에존재하는구조가구현될수있다.예를들면, 상기광학필름의기재필름중어느하나의기재필름과상기광변조층의 사이에상기편광코팅층이존재하는구조가구현될수있다.예를들면,광학 필름의 2장의기재필름중적어도하나의기재필름상에는상기전극층,상기 편광코팅층및상기배향막이순차형성되어 있을수있다.
[108] 광학디바이스에서적용될수있는상기편광층의종류는특별히제한되지 않는다.예를들면,편광층으로는,기존 LCD등에서사용되는통상의소재,예를 들면, PVA(poly (vinyl alcohol))편광증등이나,유방성액정 (LLC: Lyotropic Liquid Cystal)이나,반응성액정 (RM: Reactive Mesogen)과이색성색소 (dichroic dye)를 포함하는편광코팅층과같이코팅방식으로구현한편광층을사용할수있다. 본명세서에서상기와같이코팅방식으로구현된편광층은편광코팅층으로 호칭될수있다.상기유방성액정으로는특별한제한없이공지의 액정을 사용할수있으며 ,예를들면,이색비 (dichroic ratio)가 30내지 40정도인유방성 액정층을형성할수있는유방성 액정을사용할수있다.한편,편광코팅층이 반응성 액정 (RM: Reactive Mesogen)과이색성색소 (dichroic dye)를포함하는 경우에상기이색성색소로는선형의색소를사용하거나,혹은디스코팅상의 색소 (discotic dye)가사용될수도있다.
[109] 본출원의광학디바이스는상기와같은광학필름과편광층을각각하나씩만 포함하거나,혹은그중어느하나를 2개이상포함할수있다.따라서 ,일 예시에서상기광학디바이스는오직하나의상기광학필름과오직하나의상기 편광층을포함할수있지만,이에제한되는것은아니다.
[110] 예를들면,본출원의광학디바이스는,대향하는 2개의편광층을포함하고, 상기광변조층이상기 2개의편광층의사이에존재하는구조를가질수도있다. 이러한경우에상기대향하는 2개의편광층 (제 1및제 2편광층)의흡수축은, 서로수직하거나,혹은수평할수있다.상기에서수직및수평은,각각실질적인 수직및수평으로서, ±5도, ±4도, ±3도, ±2도이내의오차를포함하는것으로 이해할수있다.
[111] 광학디바이스는,대향배치되어있는 2장의외곽기판을추가로포함할수 있다.본명세서에서는편의상상기 2장의외곽기판중에서어느하나를제 1 외곽기판으로호칭하고,다른하나를제 2외곽기판으로호칭할수있으나, 상기제 1및 2의표현이외곽기판의선후내지는상하관계를규정하는것은 아니다.
[112] 일예시에서상기광학필름또는상기광학필름과편광층은상기 2장의외곽 기판의사이에서캡슐화되어 있을수있다.이러한캡슐화는접착필름을 사용하여이루어질수있다.예를들면,도 9에나타난바와같이상기대향 배치된 2장의외곽기판 (30)의사이에상기광학필름 (10)과편광층 (20)가존재할 수있다.
[113] 상기외곽기판으로는,예를들면,글라스등으로되는무기기판또는플라스틱 기판이사용될수있다.늘라스틱기판으로는, TAC(triacetyl cellulose)필름; 노르보르넨유도체등의 COP(cyclo olefin copolymer)필름; PMMA(poly (methyl methacrylate)등의아크릴필름; PC(polycarbonate)필름; PE(polyethylene)필름; PP(polypropylene)필름; PVA(poly vinyl alcohol)필름; DAC(diacetyl cellulose) 필름; Pac(Poly acrylate)필름; PES(poly ether sulfone)필름;
PEEK(polyetheretherketon)필름; PPS (polypheny Is ulfone)필름, PEI(polyetherimide) 필름; PEN(polyethylenemaphthatlate)필름; PET (polyethyleneterephtalate)필름; Pl(polyimide)필름; PSF(polysulfone)필름; PAR(polyarylate)필름또는불소수지 필름등이사용될수있지만,이에제한되는것은아니다.외곽기판에는,필요에 따라서금，은,이산화규소또는일산화규소등의규소화합물의코팅층이나, 반사방지층등의코팅층이존재할수도있다.
[114] 상기외곽기판의두께는특별히제한되지않으며 ,예를들면약 0.3 mm이상일 수있다.상기두께는다른예시에서약 0.5 mm이상,약 1 mm이상,약 1.5 mm 이상또는약 2 mm이상정도일수있고, 10 mm이하, 9 mm이하, 8 mm이하, 7 mm이하, 6 mm이하, 5 mm이하, 4 mm이하또는 3 mm이하정도일수도있다.
[115] 상기외곽기판은,평편 (flat)한기판이거나,혹은곡면형상을가지는기판일수 있다.예를들면,상기 2장의외곽기판은동시에평편한기판이거나,동시에 곡면형상을가지거나,혹은어느하나는평편한기판이고,다른하나는곡면 형상의기판일수있다.
[116] 또한,상기에서동시에곡면형상을가지는경우에는각각의곡률또는곡률 반경은동일하거나상이할수있다.
[117] 본명세서에서곡률또는곡률반경은,업계에서공지된방식으로측정할수 있으며 ,예를들면, 2D Profile Laser Sensor (레이저센서 ), Chromatic confocal line sensor (공초점센서 )또는 3D Measuring Conforcal Microscopy등의비접족식 장비를이용하여측정할수있다.이러한장비를사용하여곡률또는곡률 반경을측정하는방식은공지이다.
[118] 또한,상기기판과관련해서예를들어,표면과이면에서의곡률또는곡률
반경이다른경우에는각각마주보는면의곡률또는곡률반경,즉제 1외곽 기판의경우,제 2외곽기판과대향하는면의곡률또는곡률반경과제 2외곽 기판의경우제 1외곽기판과대향하는면의곡률또는곡률반경이기준이될 수있다.또한,해당면에서의곡률또는곡률반경이일정하지않고,상이한 부분이존재하는경우에는가장큰곡률또는곡률반경또는가장작은곡률 또는곡률반경또는평균곡률또는평균곡률반경이기준이될수있다.
[119] 상기기판은,양자가곡률또는곡률반경의차이가 10%이내, 9%이내, 8% 이내, 7%이내, 6%이내, 5%이내, 4%이내, 3%이내, 2%이내또는 1%이내일수 있다.상기곡률또는곡률반경의차이는,큰곡률또는곡률반경을 0^1라고 하고,작은곡률또는곡률반경을 CS라고할때에 100X(CL-CS)/CS로계산되는 수치이다.또한,상기곡률또는곡률반경의차이의하한은특별히제한되지 않는다. 2장의외곽기판의곡률또는곡률반경의차이는동일할수있기 때문에,상기곡률또는곡률반경의차이는 0%이상이거나, 0%초과일수있다.
[120] 상기와같은곡률또는곡률반경의제어는,본출원의광학디바이스와같이 광학필름및/또는편광층이접착필름으로캡슐화된구조에있어서유용하다.
[121] 제 1및제 2외곽기판이모두곡면인경우에양자의곡률은동일부호일수 있다.다시말하면,상기 2장의외곽기판은모두동일한방향으로굴곡되어 있을 수있다.즉,상기경우는,제 1외곽기판의곡률중심과제 2외곽기판의곡률 중심이모두제 1및제 2외곽기판의상부및하부중에서같은부분에존재하는 경우이다.
[122] 도 W은,제 1및제 2외곽기판 (30)의사이에광학필름등을포함하는캡슐화 부위 (400)가존재하는측면예시인데,이경우는제 1및제 2외곽기판 (30) 모두의곡률중심은도면에서하부에존재하는경우이다.
[123] 제 1및제 2외곽기판의각각의곡률또는곡률반경의구체적인범위는
특별히제한되지않는다.일예시에서상기각각의기판의곡률반경은, 100R 이상, 200R이상, 300R이상, 400R이상, 500R이상, 600R이상, 700R이상, 800R 2020/175795 1»（：1^1{2020/000665 이하, 1,20011이하, 1,10011이하또는 1,05011이하일수있다.상기에서 II은 반지름이 1 111111인원의휘어진경도를의미한다.따라서,상기에서 예를들어, 10011은반지름이 100111111인원의휘어진정도또는그러한원에 대한곡률 반경이다.물론기판이평편한경우에곡률은 0이고,곡률반경은무한대이다.
[124] 제 1및제 2외곽기판은상기 범위에서동일하거나상이한곡률반경을가질 수있다.일예시에서 제 1및제 2외곽기판의곡률이서로다른경우에,그 중에서곡률이큰기판의곡률반경이상기 범위내일수있다.
[125] 일예시에서 제 1및제 2외곽기판의곡률이서로다른경우에는그중에서 곡률이큰기판이 광학디바이스의사용시에보다중력 방향으로배치되는 기판일수있다.
[126] 일예시에서상기제 1및제 2외곽기판중에서상부기판에비해서하부
기판이보다큰곡률을가질수있다.이러한경우에상기 제 1및제 2외곽 기판의곡률의차이는전술한범위일수있다.또한,상기에서상부는,제 1및제 2외곽기판이모두곡면기판이거나,혹은제 1및제 2외곽기판중어느하나가 곡면기판이고,다른하나는평면기판인경우에상기곡면의볼록한부위를 향하는방향을따라서 결정되는위치 관계이다.예를들어,도 의경우,도면의 하부에서상부로볼록한방향이 형성되어 있기 때문에상부의외곽기판이상부 기판이 되고,하부의외곽기판이하부기판이된다.이러한구조에서는접착 필름 (400)에의해서서로부착되어 있는외곽기판중곡면기판이 나타내는 복원력에 의해광학디바이스의중심부로일정수준의 압력이발생하게되어서 내부에 기포등의불량의발생이 억제,경감,완화및/또는방지될수있다.
[127] 상기캡슐화를위해서는,후술하는바와같이접착필름을사용한
오토클레이브 (쇼 0(：1 6)공정이수행될수있고,이과정에서는통상고온및 고압이 적용된다.그런데,이와같은오토클레이브공정후에캡슐화에 적용된 접착필름이고온에서장시간보관되는등의 일부경우에는일부재융해등이 일어나서,외곽기판이 벌어지는문제가발생할수있다.이와같은현상이 일어나게되면,캡슐화된능동액정소자및/또는편광층에 힘이작용하고, 내부에 기포가형성될수있다.
[128] 그렇지만,기판간의곡률또는곡률반경을위와같이제어하게되면,접착 필름에 의한합착력이 떨어지게되어도복원력과중력의 합인알짜힘이 작용하여 벌어짐을막아줄수있고,오토클레이브와같은공정 압력에도잘견딜 수있다.또한,상기복원력과중력의합인알짜힘이광학디바이스의
중심부에서 작용하기 때문에실제투과율등이조절되는영역에서기포등의 불량의 발생을보다효과적으로억제,경감,완화및/또는방지할수있다.
[129] 광학디바이스는상기광학필름및/또는편광층을상기 외곽기판내에서 캡슐화하고있는접착필름을추가로포함할수있다.이러한접착필름 (40)은, 예를들면,도 11에 나타난바와같이외곽기판 (30)과광학필름 (10)의사이,광학 필름 (10)과편광층 (20)의사이 및/또는편광층 (20)와외곽기판 (30)의사이에 존재할수있고,상기광학필름 (10)과편광층 (20)의측면,적절하게는모든 측면에존재할수있다.
[130] 접착필름은,상기외곽기판 (30)과광학필름 (10),광학필름 (10)과편광층 (20) 및편광층 (20)와외곽기판 (30)들을서로접착시키면서，상기광학필름 (10)과 편광층 (20)를캡슐화하고있을수있다.
[131] 예를들면,목적하는구조에따라서외곽기판,광학필름,편광층및접착
필름을적층한후에진공상태에서압착하는방식으로상기구조를구현할수 있다.
[132] 상기접착필름으로는,공지의소재가사용될수있고,예를들면,공지된
열가소성쓸리우레탄접착필름 (TPU: Thermoplastic Polyure比 lane),
TPS(Thermoplastic Starch),쓸리아 이드접착필름,쓸리에스테르접착필름, EVA(Ethylene Vinyl Acetate)접착필름,쓸리에틸렌또는쓸리프로필렌등의 폴리올레핀접착필름또는폴리올레핀엘라스토머필름 (POE필름)등중에서 후술하는물성을만족하는것이선택될수있다.
[133] 접착필름으로는,소정범위의위상차를가지는필름이사용될수있다.일 예시에서상기접착필름은정면위상차가 100 nm이하일수있다.상기정면 위상차는다른예시에서약 95nm이하,약 90nm이하,약 85nm이하,약 80nm 이하,약 75nm이하,약 70nm이하,약 65nm이하,약 60nm이하,약 55nm이하,약 50nm이하,약 45nm이하,약 40nm이하,약 35nm이하,약 30nm이하,약 25nm 이하,약 20 nm이하,약 15 nm이하,약 lOnm이하,약 9nm이하,약 8nm이하,약 7nm이하,약 6nm이하,약 5nm이하,약 4nm이하,약 3nm이하,약 2nm이하 또는약 lnm이하일수있다.상기정면위상차는다른예시에서약 Onm이상,약 lnm이상,약 2nm이상,약 3nm이상,약 4nm이상,약 5nm이상,약 6nm이상,약 7nm이상,약 8nm이상,약 9nm이상,또는약 9.5nm이상일수있다.
[134] 접착필름의두께방향위상차의절대값은,예를들면, 200 nm이하일수있다. 상기절대값은다른예시에서약 190nm이하, 180nm이하, 170nm이하, 160nm 이하, 15 Onm이하, 140nm이하, 130nm이하, 120 nm이하또는 115 nm이하일수 있거나 nm이상, Onm이상, lOnm이상, 20nm이상, 30nm이상, 40nm이상, 50nm 이상, 60nm이상, 7 Onm이상, 80 nm이상또는 90 nm이상일수있다.상기두께 방향위상차는상기범위내의절대값을가지는한음수이거나 nm이상,양수일 수있다.
[135] 상기접착필름의정면위상차 (Rin)및두께방향위상차 (Rth)는각각상기수식 1및 2에서두께 (d),지상축방향굴절률 (nx),진상축방향굴절률 (ny)및두께 방향의굴절률 (nz)을접착필름의두께 (d),지상축방향굴절률 (nx),진상축방향 굴절률 (ny)및두께방향의굴절률 (nz)로대체하여계산하는것외에는동일하게 계산될수있다.
[136] 상기접착필름의두께는상기외곽기판 (30)과능동액정층 (10)의사이의접착 필름의두께,예를들면상기양자간의간격,광학필름 (10)과편광층 (20)의 사이의접착필름의두께,예를들면상기양자간의간격및편광층 (20)와외곽 기판 (30)의사이의접착필름의두께,예를들면상기양자간의간격일수있다.
[137] 접착필름의두께는특별히제한되지않으며 ,예를들면약 200 nm내지 60(Vm 정도의범위내일수있다.상기에서접착필름의두께는상기외곽기판 (30)과 광학필름 (10)의사이의접착필름의두께,예를들면상기양자간의간격,광학 필름 (10)과편광층 (20)의사이의접착필름의두께,예를들면상기양자간의 간격및편광층 (20)와외곽기판 (30)의사이의접착필름의두께,예를들면상기 양자간의간격일수있다.
[138] 광학디바이스는상기구성외에도필요한임의구성을추가로포함할수있고, 예를들면,위상차층,광학보상층,반사방지층,하드코팅층등의공지의구성을 적절한위치에포함할수있다.
[139] 본출원의상기광학디바이스를제조하는방법은특별히제한되지않는다.일 예시에서상기광학디바이스는,전술한캡슐화를위해서오토클레이브공정을 거쳐제조될수있다.
[14이 예를들면,상기광학디바이스의제조방법은,대향배치되어있는제 1및제 2 외곽기판의사이에 있는광학필름및/또는편광층을접착필름을사용한 오토클레이브공정을통해캡슐화하는단계를포함할수있다.이과정에서상기 제 1및제 2외곽기판의곡률의차이등을포함한구체적인사항은전술한바와 같다.
[141] 상기오토클레이브공정은,외곽기판의사이에목적하는캡슐화구조에
따라서접착필름과능동액정소자및/또는편광층을배치하고,가열/가압에 의해수행할수있다.
[142] 예를들어,외곽기판 (30),접착필름 (40),능동액정층 (10),접착필름 (40),
편광층 (20),접착필름 (40)및외곽기판 (30)을상기순서로배치하고,능동 액정층 (10)과편광층 (20)의측면에도접착필름 (40)을배치한적층체를
오토클레이브공정으로가열/가압처리하면,도 11에나타난것과같은광학 디바이스가형성될수있다.
[143] 상기오토클레이브공정의조건은특별한제한이없고,예를들면,적용된접착 필름의종류에따라적절한온도및압력하에서수행할수있다.통상의 오토클레이트공정의온도는약 80OC이상, 90OC이상또는 100OC이상이며, 압력은 2기압이상이나,이에제한되는것은아니다.상기공정온도의상한은약 200OC이하, 190OC이하, 180OC이하또는 170OC이하정도일수있고,공정 압력의상한은약 W기압이하, 9기압이하, 8기압이하, 7기압이하또는 6기압 이하정도일수있다.
[144] 상기와같은광학디바이스는다양한용도로사용될수있으며 ,예를들면, 선글라스나 AR(Argumented Reality)또는 VR( Virtual Reality)용
아이웨어 (eyewear)등의아이웨어류,건물의외벽이나차량용선루프등에 사용될수있다. 2020/175795 1»（：1^1{2020/000665
[145] 하나의예시에서상기광학디바이스는,그자체로서차량용선루프일수있다.
[146] 예를들면,적어도하나이상의개구부가형성되어 있는차체를포함하는
자동차에 있어서상기개구부에장착된상기광학디바이스또는차량용 선루프를장착하여사용될수있다.
[147] 이때외곽기판의곡률또는곡률반경이서로상이한경우에는그중에서곡률 반경이더작은기판,즉곡률이더큰기판이보다중력방향으로배치될수 있다.
[148] 선루프는,차량의천장에존재하는고정된또는작동（벤팅또는슬라이딩）하는 개구부（애^ 로서,빛또는신선한공기가차량의내부로유입되도록하는 기능을할수있는장치를통칭하는의미일수있다.본출원에서선루프의작동 방식은특별히제한되지않으며,예를들어,수동으로작동하거나또는모터로 구동할수있으며,선루프의형상,크기또는스타일은목적하는용도에따라 적절히선택될수있다.예를들어,선루프는작동방식에따라팝-업타입 선루프,스포일러여노 &出（노）타입선루프,인빌트타입선루프,폴딩타입 선루프,탑-마운트타입선루프,파노라믹루프시스템타입선루프,제거가능한
Figure imgf000022_0001
선루프또는솔라타입선루프등이 예시될수있으나이에제한되는것은아니다.
[149] 본출원의 예시적인선루프는본출원의상기광학디바이스를포함할수있고, 이경우광학디바이스에대한구체적인사항은상기광학디바이스의항목에서 기술한내용이동일하게적용될수있다.
발명의효과
[150] 본출원은,캡슐화된구조에서외부전원이연결되었을때도단락등의불량을 예방할수있는광학디바이스를제공한다.
도면의간단한설명
[151] 도 1은예시적인광학필름의측면도이다.
[152] 도 2내지 8은,전극층의형성형태를설명하기위한도면이다.
[153] 도 9내지 11은,예시적인광학소자의측면도이다.
발명의실시를위한형태
[154] 이하실시예를통하여본출원을보다상세히설명하나,본출원의범위가하기 실시예로제한되는것은아니다.
[155]
[156] 실시예 1.
[157]
[158] 광변조층으로서,（3¾（311£ 선0비액정층을가지는광학필름을제조하였다. 일면에
Figure imgf000022_0002
120, 140）과액정배향막（도 1에는 미도시）이순차형성되
Figure imgf000022_0003
110, 150）을 약
Figure imgf000022_0004
유지되도록대향배치한상태에서그사이에 2020/175795 1»（：1^1{2020/000665 액정호스트（Merck社의 MAT- 16-969액정）및이색성염료게스트 社, 12）의혼합물을주입하고,실런트로테두리를봉하여광학필름을제작하였다. 필름의대향배치는서로배향막이형성된면이마주보도록하였다.
[159] 한편,상기대향배치시에실런트를도 8에나타난바와같이형성하고,
광변조층（상기（311액정층）（130）이형성된부분을실런트（160）의내측이라고할 때에외측에형성된전극층（140, 120）에단자를형성하여제 2영역을형성한 후에그사이에절연층을형성하였다.절연층은,
Figure imgf000023_0001
필름을적정 크기로재단하여제 2영역의사이에배치하여형성하였다.
[16이 상기광학필름과
Figure imgf000023_0002
가판의
사이에서열가소성폴리우레탄접착필름（두께:약 0.38 111111,제조사:쇼 아 사, 제품명 :쇼¾01¾幻으로캡슐화하여광학소자를제조하였다.상기에서외곽 기판으로는두께가약 3111111정도인글라스기판을사용하였으며,곡률반경이약 30요인기판（제 1외곽기판）과곡률반경이 00요인기판（제 2외곽기판）을 사용하였다.상기제 1외곽기판,상기접착필름,상기광학필름,상기접착 필름,상기편광층,상기접착필름및상기제 2외곽기판을상기순서로 적층하고,광학필름의모든측면에도상기접착필름을배치하여적층체를 제조하였다（제 1외곽기판에비해서제 2외곽기판이중력방향으로배치）.그 후,약 0ᄋ（:의온도및 2기압정도의압력으로오토클레이브공정을수행하여 광학소자를제조하였다.
[161] 이와같은방식으로형성한광학디바이스의제 2영역（즉,상기전극층의
단자가형성된영역）에외부전원을연결하고,구동하였을때에투과모드와 차단모드의사이를효율적으로스위칭하였으며,그과정에서단락현상은 발생하지않았다.

Claims

2020/175795 1»（：1^1{2020/000665 청구범위
[청구항 1] 대향배치된제 1및제 2기재필름;및상기 제 1및제 2기재필름의 사이에존재하는광변조증을포함하는광학필름을가지고,
상기 제 1및제 2기재필름의서로대향하는면에는각각전극층이 형성되어 있으며,
상기 전극층은,상기광변조층에 전계를인가할수있도록형성된제 1 영역과상기제 1영역이상기 전계를인가할수있도록상기 전극층을 외부전원과연결하고있는제 2영역을포함하고,
상기 제 1기재필름상의상기제 2영역과상기제 2기재필름상의상기 제 2영역은서로대향배치되어 있으며,
상기 대향배치된제 1및제 2기재필름의제 2영역의사이에는 절연층이존재하는광학디바이스.
[청구항 2] 제 1항에 있어서,기재필름을표면상에서제 2영역은제 1영역을
둘러싸도록형성되어 있는광학디바이스.
[청구항 3] 제 1항에 있어서,제 1및제 2기재필름을서로부착시키고있는
실런트를추가로포함하며,상기실런트는,기재필름의 제 1및제 2 영역의 경계에존재하면서상기제 1및제 2기재필름을부착시키고 있는광학디바이스.
[청구항 4] 제 1항에 있어서,광변조층은,액정호스트및이방성 염료게스트를 포함하고,적어도 2가지서로다른배향상태의사이를스위칭할수있는 광변조층인광학디바이스.
[청구항 5] 제 4항에 있어서 ,서로다른배향상태는수직 배향상태와수평 배향 상태를포함하는광학디바이스.
[청구항 6] 제 1항에 있어서,선형편광자를추가로포함하는광학디바이스.
[청구항 7] 제 5항에 있어서,선형편광자를추가로포함하며,상기선형편광자는, 광변조층의수평 배향상태의평균광축과편광자의 광흡수축이 이루는 각도가 80도내지 100도또는 35도내지 55도의범위 내가되도록 배치되어 있는광학디바이스.
[청구항 8] 제 1항에 있어서,제 1및제 2기재필름의광변조층을향하는면상에 존재하는배향막을추가로포함하는광학디바이스.
[청구항 9] 제 8항에 있어서,제 1및제 2기재필름상의 배향막의 배향방향이
이루는각도는 0도내지 도의범위 내또는 80도내지 90도의범위 내인광학디바이스.
[청구항 ] 제 1항에 있어서,광학필름의 적어도일측에 배치된선형 편광자를 포함하고,상기 광학필름은,제 1및제 2기재필름의 광변조층을향하는 면상에존재하는배향막을추가로포함하며,상기 제 1및제 2기재필름 중에서상기편광자에 가까운기재필름상에 형성된배향막의 배향 2020/175795 1»（：1^1{2020/000665 방향과상기편광자의 광흡수축이 이루는각도가 80도내지 90도의범위 내인광학디바이스.
[청구항 11] 제 1항에 있어서 ,대향배치되어 있는 2장의 외곽기판을추가로
포함하고,광학필름은,상기외곽기판의사이에존재하는광학 디바이스.
[청구항 12] 제 11항에 있어서 ,광학필름은, 2장의 외곽기판의사이에서캡슐화제에 의해 전면이캡슐화되어 있는광학디바이스.
[청구항 13] 하나이상의 개구부가형성되어 있는차체 ;및상기 개구부에장착된제 1 항의 광학디바이스를포함하는자동차.
PCT/KR2020/000665 2019-02-25 2020-01-14 광학 디바이스 WO2020175795A1 (ko)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4930876A (en) * 1987-10-30 1990-06-05 Ricoh Company, Ltd. Liquid crystal display device
KR100200258B1 (ko) * 1995-03-15 1999-06-15 니시무로 타이죠 액정 표시 장치 및 그 구동방법
JP2004182484A (ja) * 2002-11-29 2004-07-02 Nippon Sheet Glass Co Ltd 調光体、及び該調光体を備える合わせガラス
JP2007004085A (ja) * 2005-06-27 2007-01-11 Asahi Glass Co Ltd 調光装置及びその製造方法
KR20180119517A (ko) * 2017-04-25 2018-11-02 주식회사 엘지화학 광학 디바이스
KR20190021757A (ko) 2017-08-23 2019-03-06 엘지디스플레이 주식회사 전계발광표시장치 및 이의 구동방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416622A (en) * 1993-02-01 1995-05-16 Minnesota Mining And Manufacturing Company Electrical connector
US6239778B1 (en) * 1998-06-24 2001-05-29 Alphamicron, Inc. Variable light attentuating dichroic dye guest-host device
US6952394B1 (en) * 1999-05-25 2005-10-04 Samsung Electronics Co., Ltd. Method for transmitting and receiving orthogonal frequency division multiplexing signal and apparatus therefor
TWI447443B (zh) 2006-02-28 2014-08-01 Fujifilm Corp 偏光板及液晶顯示器
US8562130B2 (en) * 2006-09-11 2013-10-22 Alphamicron Incorporated Interconnection tab used with optical devices
KR101127588B1 (ko) * 2010-03-09 2012-03-22 삼성모바일디스플레이주식회사 액정 표시 장치 및 액정 표시 장치의 제조 방법
CN103293751B (zh) * 2012-12-26 2015-12-09 上海中航光电子有限公司 一种液晶显示器的彩膜基板及其制造方法
EP3028079A1 (en) 2013-08-01 2016-06-08 The University Of Manchester Liquid crystal device and method of manufacture
US9541772B2 (en) 2013-09-17 2017-01-10 Johnson & Johnson Vision Care, Inc. Methods and apparatus for ophthalmic devices including cycloidally oriented liquid crystal layers
US10191342B2 (en) * 2013-10-30 2019-01-29 Sakai Display Products Corporation Display panel
EP2983040B1 (en) * 2014-07-25 2019-05-22 LG Display Co., Ltd. Transparent display based on a guest-host cholesteric liquid crystal device
JP6229755B2 (ja) * 2016-04-21 2017-11-15 大日本印刷株式会社 調光フィルム及び調光フィルムの駆動方法
CN108873487B (zh) * 2018-06-26 2020-07-31 深圳市华星光电半导体显示技术有限公司 液晶显示面板及液晶显示面板的制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4930876A (en) * 1987-10-30 1990-06-05 Ricoh Company, Ltd. Liquid crystal display device
KR100200258B1 (ko) * 1995-03-15 1999-06-15 니시무로 타이죠 액정 표시 장치 및 그 구동방법
JP2004182484A (ja) * 2002-11-29 2004-07-02 Nippon Sheet Glass Co Ltd 調光体、及び該調光体を備える合わせガラス
JP2007004085A (ja) * 2005-06-27 2007-01-11 Asahi Glass Co Ltd 調光装置及びその製造方法
KR20180119517A (ko) * 2017-04-25 2018-11-02 주식회사 엘지화학 광학 디바이스
KR20190021757A (ko) 2017-08-23 2019-03-06 엘지디스플레이 주식회사 전계발광표시장치 및 이의 구동방법

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