WO2020171467A1

WO2020171467A1 - Deposition apparatus comprising metal block-coupled heater assembly for supplying precursor source

Info

Publication number: WO2020171467A1
Application number: PCT/KR2020/001956
Authority: WO
Inventors: 심준형; 최형종; 한권덕; 이재혁; 김민식; 윤성원
Original assignee: 고려대학교 산학협력단
Priority date: 2019-02-19
Filing date: 2020-02-12
Publication date: 2020-08-27
Also published as: KR20200101141A

Abstract

A deposition apparatus comprising a metal block-coupled heater assembly for supplying a precursor source, of the present invention, comprises: a reaction chamber for supporting a substrate and providing a space required for a deposition process; a precursor storage part for storing a precursor source; a gas line part for supplying a vaporized precursor source to the reaction chamber; and a heater assembly part comprising a metal block for accommodating the precursor storage part and the gas line part therein so as to be coupled thereto, and a heating jacket for heating the metal block.

Description

Deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source

The present invention relates to a deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source.

Atomic layer deposition (ALD), a type of chemical vapor deposition method, is a method of depositing a thin film by supplying a precursor source made of a metal-organic compound to a substrate.

Once the precursor source is adsorbed on the substrate, it has a self-limiting reaction characteristic that hinders the deposition of additional precursor sources until the oxidizing agent is supplied, so the thickness of the thin film can be controlled at the atomic layer level, so various fields such as semiconductor, energy and catalyst It is being used in

A typical ALD apparatus is composed of a reaction chamber in which a precursor source reacts, a gas line through which the precursor source moves to the reaction chamber, and a canister storing the precursor source.

In addition, when the precursor source is transferred from the inside of the canister to the reaction chamber, if the temperature of all parts of the canister and the gas line is not maintained uniformly, a phenomenon in which the temperature-sensitive precursor source is aggregated occurs, and in general, the gas line and canister In order to prevent agglomeration of the precursor source, a band and jacket type heating system is used.

However, the band and jacket type heating system as described above has the following problems.

The gas lines and canisters that make up the ALD device contain complex-shaped vacuum metal gasket double-sided connection fittings (VCR fitting), bent pipes, manual and automatic valves, etc., so in the case of conventional band and jacket type heating systems Due to this non-uniformity, a temperature gradient is generated in the gas line and the canister, and thus the vaporized precursor source is again agglomerated into liquid and solid phases.

Embodiments of the present invention have been proposed to solve the above problems, and a deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source capable of simplifying the complicated shape of the conventional gas line unit and the precursor storage unit Want to provide.

In addition, to provide a deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source that can uniformly transfer heat to the gas line unit and the precursor storage unit.

In addition, it is intended to provide a deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source, which is a problem of a conventional heating system.

In an embodiment of the present invention, a deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source includes: a reaction chamber supporting a substrate and providing a space required for a deposition process; A precursor storage unit for storing a precursor source; A gas line part supplying a vaporized precursor source to the reaction chamber; And a heater assembly unit provided with a metal block to be coupled by receiving the precursor storage unit and the gas line unit therein, and a heating jacket for heating the metal block.

In addition, in an embodiment of the present invention, the gas line part of the deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source includes a gas line providing a flow path through which the vaporized precursor source moves; A pneumatic valve for controlling the vaporized precursor source to be supplied to the reaction chamber; A manual valve for controlling the vaporized precursor source to flow from the precursor storage unit; And a plurality of connecting portions connecting the gas line, the pneumatic valve, the manual valve, and the precursor storage unit.

In addition, in an embodiment of the present invention, the metal block of the deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source is divided symmetrically into a first metal block and a second metal block, and a fastening means is provided. It is combined to have a cylindrical shape through.

In addition, the metal block of the deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source according to an embodiment of the present invention has the gas line, the pneumatic valve, the manual valve, the connection part, and the precursor storage. It may further include a recessed groove so as to be detachable by engaging the part.

In addition, the metal block of the deposition apparatus including the metal block-coupled heater assembly for supplying a precursor source according to an embodiment of the present invention further includes a heat conductive layer disposed in the recessed groove.

In addition, the metal block of the deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source in an embodiment of the present invention may contain at least one or more from the group consisting of silver, copper, gold, aluminum, and magnesium. I can.

In addition, the heating jacket of the deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source according to an embodiment of the present invention includes a heating wire and a heat insulating material.

A deposition apparatus including a metal block-coupled heater assembly for supplying a precursor source according to embodiments of the present invention can simplify the complicated shape of the conventional gas line unit and the precursor storage unit.

In addition, the deposition apparatus including the metal block-coupled heater assembly for supplying the precursor source according to the embodiments of the present invention may uniformly transfer heat to the gas line unit and the precursor storage unit. .

In addition, the deposition apparatus including the metal block-coupled heater assembly for supplying the precursor source according to the embodiments of the present invention can minimize the aggregation of the precursor source, which is a problem of the conventional heating system.

1 is a diagram showing the structure of a general ALD device.

2 is a diagram showing a state in which precursor sources are aggregated in an ALD apparatus to which a conventional band-type heating system is applied.

3 and 4 are views showing a deposition apparatus to which a metal block-coupled heater assembly is applied according to an embodiment of the present invention.

5 is a diagram showing a temperature test result of an ALD device to which a conventional band type heating system is applied.

6 is a view showing a temperature test result of a deposition apparatus to which a metal block-coupled heater assembly according to an embodiment of the present invention is applied.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely describe the present invention to those with average knowledge in the art. Therefore, the shape of the element in the drawings has been exaggerated to emphasize a clearer description.

The configuration of the invention for clarifying the solution to the problem to be solved by the present invention will be described in detail with reference to the accompanying drawings based on a preferred embodiment of the present invention, but the same in assigning reference numerals to the components of the drawings For the components, even if they are on different drawings, the same reference numerals are given, and it should be noted in advance that components of other drawings may be referred to when necessary when describing the drawings.

Embodiments of the present invention relate to a deposition apparatus, and in the present specification, the deposition apparatus has been exemplarily described for an ALD apparatus, but the deposition apparatus is not limited thereto, and any apparatus for mounting a predetermined thin film on a wafer or glass It is not limited thereto. For example, the deposition apparatus is interpreted as including a chemical vapor deposition (CVD) apparatus, a sputtering apparatus, a thermal evaporation deposition apparatus, and an E-beam evaporation apparatus.

1 is a diagram showing the structure of a general ALD device, and FIG. 2 is a diagram showing a state in which precursor sources are aggregated in an ALD device to which a conventional band-type heating system is applied.

In addition, FIG. 2(a) is a view showing a manual valve of an ALD device to which a conventional band-type heating system is applied, and FIG. 2(b) is a view showing a canister and a gas line of an ALD device to which a conventional band-type heating system is applied. 2(c) is a view showing a pneumatic valve of an ALD device to which a conventional band-type heating system is applied, and FIG. 2(d) is a view showing a valve and a gas line of an ALD device to which a conventional band-type heating system is applied. to be.

1, 2(a), 2(b), 2(c), and 2(d), the ALD apparatus to which the conventional band type heating system is applied performs an atomic layer deposition process on a substrate. A gas supply module including a reaction chamber, a pneumatic valve, a manual valve, a canister and a gas line, and a gas supply module in which the temperature of the gas supply module is maintained higher than the vaporization temperature of the precursor source so that the vaporized precursor source is supplied into the reaction chamber. It includes a band-type heating system that prevents phase change in the middle.

However, in the ALD apparatus to which the band-type heating system is applied, the band-type heating system has a problem in that it is difficult to uniformly transfer heat due to the complicated shape of the gas supply module, and a temperature gradient occurs throughout the gas supply module.

Accordingly, there is a problem that the vaporized precursor source is aggregated in a partial space between a pneumatic valve, a manual valve, a canister and a gas line, and a partial space between a valve and a gas line in which heat supply is insufficient.

In addition, FIG. 4(a) is a diagram schematically illustrating a deposition apparatus to which a metal block-coupled heater assembly according to an embodiment of the present invention is applied, and FIG. 4(b) is a metal according to an embodiment of the present invention. A diagram showing a state in which the metal blocks of the deposition apparatus to which the block-coupled heater assembly is applied, and FIG. 4(c) is a heating jacket of the deposition apparatus to which the metal block-coupled heater assembly according to an embodiment of the present invention is applied. It is a diagram showing the state.

3 and 4, the deposition apparatus 1 to which the metal block-coupled heater assembly according to an embodiment of the present invention is applied includes a reaction chamber 100, a gas line part 200, and a precursor storage part ( 300) and a heater assembly unit 400.

Referring to FIG. 4A, the reaction chamber 100 has a cylindrical tube shape, and a predetermined space for accommodating a substrate and stacking a thin film on the substrate is provided therein.

In addition, a susceptor (not shown) for supporting the substrate is disposed inside the reaction chamber 100, and the susceptor (not shown) may include a heater for heating the substrate and raising it to a preset reaction temperature. have.

Accordingly, an atomic layer thin film may be deposited on the substrate of the precursor source vaporized in the reaction chamber 100.

The gas line part 200 provides a precursor source vaporized to form an atomic layer thin film on the substrate to the reaction chamber 100, and the gas line 210, the pneumatic valve 220, the manual valve 230, and the

connection part

240 , 250, 260).

In addition, the gas line part 200 may be formed to supply the vaporized precursor source to the reaction chamber 100 in a pulsed manner, and may be provided with a plurality of gas line parts to supply different vaporized precursor sources, respectively.

In addition, the gas line part 200 has one end connected to the precursor storage part 300 and the other end connected to the reaction chamber 100.

The gas line 210 is formed in the shape of a cylindrical pipe in which inlets and outlets are formed at both ends, and a flow path may be provided so that the vaporized precursor source is supplied to the reaction chamber 100.

In addition, the gas line 210 is between the reaction chamber 100 and the pneumatic valve 220, between the pneumatic valve 220 and the manual valve 230, and between the manual valve 230 and the precursor storage unit 300 Is placed.

The pneumatic valve 220 is mounted on the upper end of the gas line part 200 and controls to open and close the flow path of the gas line 210 using pneumatic pressure. When the pneumatic valve 220 is opened and operated in a closed state, it vaporizes. The precursor source may be supplied to the reaction chamber 100 through the gas line 210.

The manual valve 230 is mounted at the lower end of the gas line part 200 and controls the vaporized precursor source to flow from the precursor storage part 300. When the manual valve 240 is opened and operated in a closed state, the precursor The vaporized precursor source stored in the storage unit 300 flows into the gas line unit 200.

The

connection parts

240, 250, 260 connect the gas line 210, the pneumatic valve 220, and the manual valve 230 in series so that the gas line part 200 is integrally formed, and the gas line part 200 And the precursor storage unit 300 may be connected to each other.

In addition, it is preferable to use a metal gasket double-sided connection fitting (VCR fitting) for the

connection parts

240, 250, 260, for example, a chamber connecting the reaction chamber 100 and the pneumatic valve 220-pneumatic valve metal gasket Double-sided connection fitting, pneumatic valve connecting the pneumatic valve 220 and the manual valve 230-Manual valve metal gasket Double-sided connection fitting, manual valve connecting the manual valve 230 and the precursor storage unit 300-Precursor storage unit It consists of a metal gasket double-sided connection fitting

The precursor storage unit 300 is connected to the reaction chamber 100 through the gas line unit 200 and stores a precursor source used in the atomic layer deposition process in a solid phase and a liquid phase. Metal-organic compounds may be selected as the precursor source.

In addition, the precursor source is preferably stored as a liquid in the precursor storage unit 300, and when the manual valve 240 is opened, it is vaporized in a gaseous state due to a rapid pressure change and high temperature.

The heater assembly unit 400 includes a metal block 410 and a heating jacket 420 disposed outside the metal block.

The metal block 410 is a constituent means for receiving the gas line part 200 and the precursor storage part 300, blocking them from the outside and heating them uniformly.

In addition, referring to FIG. 4(b), the metal block 410 is divided symmetrically into a first metal block 411 and a second metal block 412 to be coupled to have a cylindrical shape through a fastening means. I can.

In addition, it is preferable that the first metal block 411 and the second metal block 412 of the metal block 410 are fastened through a bolt fastening method. That is, a nut groove is formed in the first metal block 411, and a bolt part is provided in the second metal block 412, so that the first metal block 411 and the second metal block 412 are coupled. I can.

Accordingly, the metal block 410 is freely detachable through fastening means provided on both sides.

In addition, the metal block 410 is provided with an insertion space inside, and on both sides of the gas line 210, the pneumatic valve 220, the manual valve 230, the

connection parts

240, 250, 260, and the precursor storage unit 300 A recessed groove into which one end of) is inserted is formed.

In addition, the recessed groove of the metal block 410 is fitted with the gas line 210, the pneumatic valve 220, the manual valve 230, the

connection parts

240, 250, 260, and the precursor storage part 300. It can be formed to be combined.

In addition, the recessed groove in the metal block 410 further includes a heat conductive layer (not shown), so that the gas line 210, the pneumatic valve 220, the manual valve 230, the

connection part

240, 250, 260 ) And the separation phenomenon that occurs when combined with the precursor storage unit 300 may be compensated.

The heat conductive layer (not shown) is disposed on the inner circumferential surface of the metal block 410, and is preferably formed by applying thermal grease having high thermal conductivity.

In addition, the metal block 410 is preferably formed of a metal material having high thermal conductivity, and may be, for example, a metal and a metal alloy including at least one or more from the group consisting of silver, copper, gold, aluminum, and magnesium. have.

Referring to FIG. 4C, a heating jacket 420 is disposed outside the metal block 410 and heats the metal block 410.

Accordingly, the heated metal block 410 can uniformly transfer heat to the gas line unit 200 and the precursor storage unit 300, and the temperature of the gas line unit 200 and the precursor storage unit 300 is a precursor source. It can be maintained higher than the vaporization temperature of.

In addition, the heating jacket 420 includes a heating wire 421 and an insulating material 422, and the insulating material 422 may be composed of any one of silica fibers, fiberglass fibers, and composite fibers.

In addition, the heat insulating material 422 limits heat dissipation by blocking the metal block 410 from the outside, and a heating wire 421 may be provided therein.

The heating wire 421 heats the heat insulating material 422 and the metal block 410 to maintain the gas line part 200 and the precursor storage part 300 higher than the vaporization temperature of the precursor source.

Accordingly, unlike the conventional ALD apparatus, the deposition apparatus 1 to which the metal block-coupled heater assembly according to an embodiment of the present invention is applied has a gap between the heating wires 421, a right angle structure of the precursor storage unit 300, Incomplete thermal contact caused by the complicated structure of the pneumatic valve 220 and the manual valve 230 can be prevented.

In addition, since heat generated from the heating wire 421 can be uniformly transferred to the gas line unit 200 and the precursor storage unit 300 through the metal block 410, the gas line unit 200 and the precursor are stored. The unit 300 may maintain a preset temperature.

Accordingly, it is possible to prevent a phenomenon in which the vaporized precursor source is aggregated in a partial space of the pneumatic valve 220, the manual valve 230, the precursor storage unit 300 and the gas line 210.

In addition, it is possible to prevent the problem that the atomic layer is poorly formed on the substrate as the performance of the deposition apparatus is deteriorated due to the condensation of the vaporized precursor source.

5 is a view showing a temperature test result of an ALD device to which a conventional band-type heating system is applied, and FIG. 6 is a view showing a temperature test result of a deposition device to which a metal block-coupled heater assembly is applied according to an embodiment of the present invention. to be.

As shown in Figure 5, the heating temperature is set to 80 degrees Celsius, 100 degrees Celsius, and 120 degrees Celsius, and the lower end of the precursor storage unit 400 is positioned at 1, and the upper end of the precursor storage unit 400 is positioned at 2, As a result of the experiment by selecting the manual valve 230 at the 3rd position and the pneumatic valve 220 at the 4th position, the temperature difference from the lower end of the precursor storage unit 400 to the pneumatic valve 220 is 10 to 20 degrees Celsius. Was confirmed to be. That is, when the conventional band-type heating system is applied, the temperature gradient between the gas line part 200 and the precursor storage part 300 occurs severely.

6, the heating temperature is set to 80 degrees Celsius, 120 degrees Celsius, and 150 degrees Celsius, and the lower end of the precursor storage unit 400 is positioned at No. 1, and the upper end of the precursor storing unit 400 is positioned at No. 2, As a result of the experiment by selecting the manual valve 230 at the 3rd position and the pneumatic valve 220 at the 4th position, the temperature from the lower end of the precursor storage unit 400 to the pneumatic valve 220 has a uniform value. Confirmed.

The detailed description above is to illustrate the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the disclosed contents, and/or the skill or knowledge of the art. The above-described embodiments describe the best state for implementing the technical idea of the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Therefore, the detailed description of the invention is not intended to limit the invention to the disclosed embodiment. In addition, the appended claims should be construed as including other embodiments.

Claims

A reaction chamber supporting the substrate and providing a space required for the deposition process;

A precursor storage unit for storing a precursor source;

A gas line part supplying a vaporized precursor source to the reaction chamber; And

A deposition apparatus including a heater assembly unit including a metal block to be coupled by receiving the precursor storage unit and the gas line unit therein, and a heating jacket for heating the metal block.
The method of claim 1,

The gas line part,

A gas line providing a flow path through which the vaporized precursor source moves;

A pneumatic valve for controlling the vaporized precursor source to be supplied to the reaction chamber;

A manual valve for controlling the vaporized precursor source to flow from the precursor storage unit; And

A deposition apparatus comprising a plurality of connecting portions connecting the gas line, the pneumatic valve, the manual valve, and the precursor storage unit.
The method of claim 1,

The metal block,

Divided symmetrically into a first metal block and a second metal block,

A deposition apparatus coupled to have a cylindrical shape through a fastening means.
The method of claim 1,

The metal block,

The vapor deposition apparatus further comprises a groove on the inside of the gas line, the pneumatic valve, the manual valve, the connection part and the precursor storage part and the recessed recessed so as to be detachable.
The method of claim 4,

The metal block,

A deposition apparatus further comprising a heat conductive layer disposed in the recessed groove.
The method of claim 1,

The metal block,

A vapor deposition apparatus comprising at least one or more from the group consisting of silver, copper, gold, aluminum, and magnesium.
The method of claim 1,

The heating jacket is a vapor deposition apparatus comprising a heating wire and a heat insulating material.