WO2020168801A1 - 显示模组及其制造方法、显示装置 - Google Patents

显示模组及其制造方法、显示装置 Download PDF

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Publication number
WO2020168801A1
WO2020168801A1 PCT/CN2019/126192 CN2019126192W WO2020168801A1 WO 2020168801 A1 WO2020168801 A1 WO 2020168801A1 CN 2019126192 W CN2019126192 W CN 2019126192W WO 2020168801 A1 WO2020168801 A1 WO 2020168801A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion unit
base substrate
electrode
display panel
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PCT/CN2019/126192
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English (en)
French (fr)
Inventor
刘威
Original Assignee
京东方科技集团股份有限公司
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Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/772,894 priority Critical patent/US20210210577A1/en
Publication of WO2020168801A1 publication Critical patent/WO2020168801A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure relates to a display module, a manufacturing method thereof, and a display device.
  • the transparent display module includes a transparent display panel, and the transparent display panel has a transparent display state so that the viewer can watch the image displayed on the display panel and the scene behind the display panel.
  • a shop window with a transparent display panel can enable viewers to view the images displayed in the shop window and the products placed in the shop.
  • the embodiments of the present disclosure provide a display module, a manufacturing method thereof, and a display device.
  • the technical solutions of the embodiments of the present disclosure are as follows:
  • a display module in a first aspect, includes: a display panel and a brightness adjustment assembly, the display panel includes a base substrate and a photoelectric conversion unit provided on the base substrate, the The display panel has a transparent area, the photoelectric conversion unit is located in the transparent area, and the photoelectric conversion unit is connected to the brightness adjustment component;
  • the photoelectric conversion unit is configured to convert optical signals of ambient light in the environment where the display panel is located into electrical signals;
  • the brightness adjustment component is configured to adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit.
  • the display panel further includes: a switch unit provided on the base substrate, and the switch unit is connected to the photoelectric conversion unit.
  • the display panel includes a display area and a non-display area
  • the non-display area includes a non-transparent area and the transparent area
  • the display area includes a non-transparent area
  • the switch unit is located in the non-display area In the non-transparent area, or, the switch unit is located in the non-transparent area of the display area.
  • the photoelectric conversion unit is a photodiode.
  • the photoelectric conversion unit includes: a first electrode, a PIN structure, and a second electrode that are sequentially stacked in a direction away from the base substrate, and the first electrode is connected to the switch unit.
  • the switch unit is a thin film transistor TFT, and the drain of the TFT is connected to the first electrode.
  • the material of the first electrode, the material of the PIN structure, and the material of the second electrode are all transparent materials.
  • the second electrode includes a lower electrode and an upper electrode that are superimposed
  • the display panel further includes: a passivation layer disposed between the lower electrode and the upper electrode, on the passivation layer It has a through hole, and the upper electrode is connected to the lower electrode through the through hole.
  • the display panel further includes: a display unit located on the base substrate, and the display unit includes: a TFT, an anode, a pixel definition layer, and a light-emitting layer arranged in sequence along a direction away from the base substrate And cathode.
  • a display unit located on the base substrate, and the display unit includes: a TFT, an anode, a pixel definition layer, and a light-emitting layer arranged in sequence along a direction away from the base substrate And cathode.
  • a method for manufacturing a display module includes:
  • the photoelectric conversion unit is configured to convert optical signals of ambient light in the environment where the display panel is located into electrical signals
  • the brightness adjustment component is configured to adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit.
  • the method before forming the photoelectric conversion unit on the base substrate, the method further includes: forming a switch unit on the base substrate;
  • the forming the photoelectric conversion unit on the base substrate includes: forming the photoelectric conversion unit on the base substrate on which the switch unit is formed, and the switch unit is connected to the photoelectric conversion unit.
  • the photoelectric conversion unit is a photodiode
  • forming the photoelectric conversion unit on a base substrate on which the switch unit is formed includes:
  • a first electrode and a PIN structure are sequentially formed on the base substrate on which the switch unit is formed, and the first electrode is connected to the switch unit;
  • a second electrode is formed on the base substrate on which the PIN structure is formed, and the first electrode, the PIN structure, and the second electrode are sequentially stacked in a direction away from the base substrate.
  • the forming the switch unit on the base substrate includes: forming a TFT on the base substrate, and the drain of the TFT is connected to the first electrode.
  • the forming the second electrode on the base substrate on which the PIN structure is formed includes: forming a lower electrode on the base substrate on which the PIN structure is formed;
  • the method further includes: forming a passivation layer on the base substrate on which the lower electrode is formed, the passivation layer having a through hole, and the lower electrode is partially exposed through the through hole;
  • the forming the second electrode on the base substrate with the PIN structure further includes: forming an upper electrode on the base substrate with the passivation layer, the upper electrode being connected to the base substrate through the through hole.
  • the lower electrode is connected.
  • the method further includes: forming a display unit on the base substrate.
  • a display device including the display module described in the first aspect or any optional manner of the first aspect.
  • FIG. 1 is a top view of a display panel according to an embodiment of the disclosure.
  • FIG. 2 is a top view of a display module provided by an embodiment of the disclosure.
  • FIG. 3 is an enlarged view of a partial area of the display module shown in FIG. 2.
  • FIG. 4 is an enlarged view of a partial area of another display module provided by an embodiment of the disclosure.
  • Fig. 5 is a schematic cross-sectional view of the position A-B of the display module shown in Fig. 4.
  • FIG. 6 is a schematic diagram of a PIN structure provided by an embodiment of the disclosure.
  • FIG. 7 is a schematic cross-sectional view of the position C-D of the display module shown in FIG. 4.
  • FIG. 8 is a method flowchart of a method for manufacturing a display module according to an embodiment of the disclosure.
  • FIG. 9 is a method flowchart of another method for manufacturing a display module according to an embodiment of the disclosure.
  • FIG. 10 is a flowchart of a method for forming a photoelectric conversion unit according to an embodiment of the disclosure.
  • FIG. 11 is a flowchart of a method for forming a second electrode according to an embodiment of the disclosure.
  • FIG. 1 is a top view of a display panel 10 according to an embodiment of the present disclosure.
  • the display panel 10 has a transparent area a and a non-transparent area b.
  • the non-transparent area b is provided with a pixel unit 11 for display.
  • the pixel unit 11 includes a red sub-pixel unit 111, a green sub-pixel unit 112, and a blue sub-pixel unit 113.
  • the first method a brightness adjustment button is provided in the display device, and the user can manually adjust the brightness of the display panel through the brightness adjustment button.
  • the accuracy of manual adjustment is low, and the process of manual adjustment is more complicated.
  • the second method the display device is provided with a photosensitive area for sensing ambient light, the photosensitive area is located outside the display panel, and the display device adjusts the brightness of the display panel according to the brightness of the ambient light sensed by the photosensitive area.
  • the photosensitive area is located outside the display panel, the accuracy of adjusting the brightness of the display panel based on the brightness sensed by the photosensitive area is low, and misadjustment is prone to occur; in addition, the photosensitive area outside the display panel will also affect The appearance design of the display device.
  • the embodiments of the present disclosure provide a display module, a manufacturing method thereof, and a display device.
  • the display module includes a display panel and a brightness adjustment component.
  • a photoelectric conversion unit is provided in a transparent area of the display panel.
  • the photoelectric conversion unit can place the display panel
  • the optical signal of the ambient light in the environment is converted into an electrical signal
  • the brightness adjustment component can adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit. Since there is no need to manually adjust the brightness of the display panel and the photoelectric conversion unit is located in the display panel, the accuracy of adjusting the brightness of the display panel is relatively high.
  • the material of the photoelectric conversion unit is a transparent material.
  • the photoelectric conversion unit is arranged in the transparent area, and the transparent area is located in the non-display area, so the photoelectric conversion unit will not affect the aperture ratio and resolution of the display panel, that is,
  • the solution provided by the embodiments of the present disclosure realizes the adjustment of the brightness of the display panel without affecting the aperture ratio and resolution of the display panel. Please refer to the description of the following embodiments for the detailed solution of the present disclosure.
  • FIG. 2 is a top view of a display module 2 according to an embodiment of the disclosure
  • FIG. 3 is an enlarged view of the area E of the display module 2 shown in FIG. 2, see FIGS. 2 and 3.
  • the display panel 20 includes a display area d and a non-display area c.
  • the display area d includes a non-transparent area (none of which is shown in FIGS.
  • the non-display area c includes a transparent area c1 and a non-transparent area c2,
  • the display area d is provided with a plurality of pixel units arranged in an array (not shown in Figure 2 and Figure 3), and each pixel unit includes a red sub-pixel (not shown in Figure 2 and Figure 3) and a green sub-pixel (Not marked in Figure 2 and Figure 3) and blue sub-pixels (not marked in Figure 2 and Figure 3).
  • the display module 2 includes a display panel 20 and a brightness adjustment assembly 30.
  • the display panel 20 includes a base substrate 21 and a photoelectric conversion unit 22 provided on the base substrate 21.
  • the display The panel 20 has a transparent area c1, the photoelectric conversion unit 22 is located in the transparent area c1, and the photoelectric conversion unit 22 is connected to the brightness adjustment assembly 30.
  • the photoelectric conversion unit 22 is configured to convert the optical signal of ambient light in the environment where the display panel 20 is located into an electrical signal
  • the brightness adjustment component 30 is configured to adjust the display panel 20 based on the electrical signal converted by the photoelectric conversion unit 22 brightness.
  • the display module includes a display panel and a brightness adjustment component
  • the display panel includes a photoelectric conversion unit
  • the photoelectric conversion unit is arranged in a transparent area of the display panel
  • the photoelectric conversion unit is connected to the brightness adjustment component
  • the photoelectric conversion unit can convert the optical signal of the ambient light in the environment where the display panel is located into an electrical signal
  • the brightness adjustment component can adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit, because the photoelectric conversion unit is set in the display In the panel, therefore, the accuracy of adjusting the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit is relatively high.
  • the above-mentioned base substrate 21 may be a transparent substrate.
  • the base substrate may be a rigid substrate made of non-metallic materials with a certain rigidity, such as glass, quartz, or transparent resin; or
  • the base substrate is a flexible substrate made of flexible materials such as polyimide (PI).
  • the display module 2 may include an integrated circuit (IC) bound to the display panel 20, the integrated circuit may be a driving IC, and the brightness adjusting component 30 may be a functional component in the integrated circuit.
  • IC integrated circuit
  • the photoelectric conversion unit 22 is located in the transparent area c1, that is, the photoelectric conversion unit 22 is located in the non-display area c. In this way, the photoelectric conversion unit 22 can avoid the influence of the photoelectric conversion unit 22 on the aperture ratio and resolution of the display panel 20.
  • the display module 2 provided by the embodiment of the present disclosure can improve the accuracy of brightness adjustment of the display panel 20 without affecting the aperture ratio and resolution of the display panel 20.
  • FIG. 4 is an enlarged view of a partial area of another display module 2 provided by an embodiment of the present disclosure.
  • the display panel 20 further includes: The switch unit 23 on the 21, the switch unit 23 is connected to the photoelectric conversion unit 22, and the switch unit 23 is used to switch the photoelectric conversion unit 22.
  • the switch unit 23 is used to control whether the photoelectric conversion unit 22 works or not.
  • the switch unit 23 is turned on, the photoelectric conversion unit 22 works, and the photoelectric conversion unit 22 converts optical signals into electrical signals.
  • the switch unit 23 is turned off, the photoelectric conversion unit 22 does not work, that is, the photoelectric conversion unit 22 does not perform Conversion of optical and electrical signals.
  • FIG. 1 is an enlarged view of a partial area of another display module 2 provided by an embodiment of the present disclosure.
  • the display panel 20 further includes: The switch unit 23 on the 21, the switch unit 23 is connected to the photoelectric conversion unit 22, and the switch unit 23 is used to switch the photoelectric conversion unit 22.
  • the switch unit 23 is used to control whether the photoelectric
  • the above-mentioned switch unit 23 is located in the display area d, and specifically in the non-transparent area of the display area d. 4, the switch unit 23 is located in the non-transparent area of the display area d as an example. In practical applications, the switch unit 23 may also be located in the non-transparent area of the non-display area. Not limited. Since the switch unit 23 is usually made of a non-transparent material, the switch unit 23 is arranged in the non-transparent area to avoid the influence of the switch unit 23 on the transparency of the transparent area c1.
  • the position of the photoelectric conversion unit 22 and the switch unit 23 in the display panel 20 shown in FIG. 4 is only a schematic illustration.
  • the photoelectric conversion unit 22 can also be arranged in other positions of the transparent area c1.
  • the switch unit 23 can be arranged in other positions in the non-transparent area, as long as the switch unit 23 is connected to the photoelectric conversion unit 22, which is not limited in the embodiment of the present disclosure.
  • FIG. 5 is a schematic cross-sectional view of the display module 2 shown in FIG. 4 at the position AB.
  • the photoelectric conversion unit 22 is a photodiode, and the photoelectric conversion unit 22 includes a first electrode 221, a PIN structure 222, and a second electrode 223 that are sequentially stacked in a direction away from the base substrate 21.
  • the first electrode 221 Connected to the switch unit 23.
  • the material of the first electrode 221, the material of the PIN structure 222, and the material of the second electrode 223 may all be transparent materials to reduce the influence of the photoelectric conversion unit 22 on the transparency of the transparent region c1.
  • the material of the first electrode 221 The material of the second electrode 223 and the second electrode 223 may be indium tin oxide (ITO).
  • the second electrode 223 includes a lower electrode 2231 and an upper electrode 2232 that are superimposed, and the display panel 20 further includes a passivation layer 24 disposed between the lower electrode 2231 and the upper electrode 2232, The passivation layer 24 has a through hole 241, and the upper electrode 2232 is connected to the lower electrode 2231 through the through hole 241.
  • the upper electrode 2232 can increase the photosensitive area of the photoelectric conversion unit 22, so that the photoelectric conversion unit 22 can sense the ambient light. Please refer to FIG.
  • the PIN structure 222 includes a P-type semiconductor layer 2221, an intrinsic semiconductor layer 2222, and an N-type semiconductor layer 2223 that are sequentially stacked.
  • the N-type semiconductor layer 2221 may be close to the first electrode 221 relative to the N-type semiconductor layer 2223, or the P-type semiconductor layer 2221 may be far away from the first electrode 221 relative to the N-type semiconductor layer 2223, which is not limited in the embodiment of the present disclosure.
  • the P-type semiconductor layer 2221 may be a P-type doped amorphous silicon (a-Si) film
  • the N-type semiconductor layer 2223 may be an N-type doped a-Si film
  • the intrinsic semiconductor layer 2222 may be a -Si film.
  • the P-type semiconductor layer 2221 may be doped with boron (B) ions
  • the N-type semiconductor layer 2223 may be doped with phosphorus (P) ions.
  • the photodiode with the PIN structure 222 mentioned above can also be called a PIN junction photodiode.
  • the PIN junction photodiode can perform photoelectric conversion based on the photovoltaic effect.
  • the photoelectric conversion unit of this structure is very sensitive to light and can accurately sense. The ambient light is detected and the optical signal of the ambient light is converted into an electrical signal, so that the brightness adjustment component 30 can accurately adjust the brightness of the display panel 20.
  • the working principle of the PIN junction photodiode is: when light irradiates the PIN junction photodiode, the energy of the light excites the electrons in the P-type semiconductor layer 2221 and the N-type semiconductor layer 2223 from the covalent bond, thereby Electron-hole pairs are generated in the PIN junction photodiode. Part of the electrons and holes excited in the PIN junction photodiode are not recombined (that is, after the PIN junction photodiode is illuminated by light, the part of the electrons and holes that are excited When the PIN junction photodiode tends to stabilize, the holes are not captured by the "recombination center" and disappear) before they reach the space charge region.
  • the electrons travel to the positively charged N-type semiconductor layer. 2223 moves and the holes move to the negatively charged P-type semiconductor layer 2221.
  • the P-type semiconductor layer 2221 stores excess holes. It is positively charged, so that an electromotive force is generated on the intrinsic semiconductor layer 2222 between the N-type semiconductor layer 2223 and the P-type semiconductor layer 2221, and a corresponding current is generated. The gradual accumulation of this current makes the PIN junction photodiode have photoelectric conversion Features.
  • the structure of the photoelectric conversion unit 22 described in the embodiments of the present disclosure is only exemplary. In practical applications, the structure of the photoelectric conversion unit may also be other structures, as long as it can achieve the environment where the display panel is located. Accurate sensing of light is sufficient.
  • the switch unit 23 may be a thin film transistor (TFT).
  • TFT thin film transistor
  • the switch unit 23 includes a gate 231 and a gate insulation that are arranged in a direction away from the base substrate 21 in sequence.
  • the source-drain layer 235 includes a source 2351 and a drain 2352.
  • the source 2351 and the drain 2352 are not in contact with each other.
  • the electrode 221 is connected. It should be noted that, as shown in FIG. 5, the embodiment of the present disclosure is described by taking the switch unit 23 as an example of a TFT with a bottom gate structure.
  • the switch unit may be a TFT with a top gate structure, as long as it can It is sufficient to realize the switch control of the photoelectric conversion unit, which is not limited in the embodiment of the present disclosure.
  • the display module 2 may also include a control component (not shown in the figure), which can be connected to the source 2351 of the switch unit, and the control component is used to control whether the switch unit 23 is turned on. It may be a functional component in the integrated circuit of the display module 2.
  • the gate insulating layer 232 and the etching barrier layer 234 of the switch unit 23 extend to the transparent area c1 of the display panel 20, and the photoelectric conversion unit 22 may be disposed on the etching barrier layer 234 away from the base substrate. 21 side.
  • the display panel 20 further includes a display unit 25 located on the base substrate 21.
  • FIG. 7 is a schematic cross-sectional view of the display module 2 shown in FIG. 4 at the CD position.
  • the display unit 25 includes: TFT 251, anode 252, and pixel definitions arranged in order along a direction away from the base substrate 21 Layer 253, light emitting layer 254 and cathode 255.
  • the TFT 251 includes: a gate 2511, a gate insulating layer 2512, an active layer 2513, an etching stop layer 2514, and a source-drain layer 2515 that are sequentially arranged along a direction away from the base substrate 21.
  • the source-drain layer 2515 includes a source 2515a and the drain 2515b, the source 2515a and the drain 2515b are not in contact, and the drain 2515b is connected to the anode 252.
  • the gate insulating layer 2512 of the TFT 251 and the gate insulating layer 232 of the switch unit 23 are the same film layer, and the etching stop layer 2514 of the TFT 251 and the etching stop layer 234 of the switch unit 23 are the same film layer.
  • the TFT 251 can be manufactured simultaneously with the above-mentioned switch unit 23, thereby simplifying the manufacturing process of the display panel 20 and improving production efficiency.
  • the display unit 25 may cover the switch unit 23 to avoid the influence of the setting of the switch unit 23 on the aperture ratio of the display unit 25 and the resolution of the display panel 20.
  • the embodiments of the present disclosure are intended to be clearer Describe the complete structure of the switch unit 23 and the position of the switch unit 23 on the base substrate 21.
  • the portion of the display unit 25 that covers the switch unit 23 is not shown in FIG. 4. Therefore, from FIG. 4, the display unit 25 ( That is, the red display unit R and the green display unit G) in FIG. 4 have gaps.
  • the display module 2 provided by the embodiment of the present disclosure can automatically adjust the brightness of the display panel 20.
  • a brightness adjustment switch or button
  • the user can turn on or off the brightness adjustment function of the display module through the brightness adjustment switch.
  • the display module is based on the solution provided by the embodiment of the present disclosure Adjust the brightness of the display panel.
  • the display module does not automatically adjust the brightness of the display panel.
  • the display module provided by the embodiment of the present disclosure may be an organic light-emitting diode (OLED) display module.
  • OLED organic light-emitting diode
  • the display module and the display panel in the display module also include other structures.
  • the display panel also includes structures such as a packaging structure and a cover plate, which are not described in detail in the embodiments of the present disclosure.
  • the display module includes a display panel and a brightness adjustment component
  • the display panel includes a photoelectric conversion unit
  • the photoelectric conversion unit is arranged in a transparent area of the display panel
  • the photoelectric conversion unit is connected to the brightness adjustment component
  • the photoelectric conversion unit can convert the optical signal of the ambient light in the environment where the display panel is located into an electrical signal
  • the brightness adjustment component can adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit, because the photoelectric conversion unit is set in the display In the panel, the accuracy of adjusting the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit is relatively high
  • the material of the photoelectric conversion unit is a transparent material
  • the photoelectric conversion unit is arranged in a transparent area, and the transparent area is located in a non-transparent area. In the display area, the photoelectric conversion unit will not affect the aperture ratio and resolution of the display panel.
  • FIG. 8 is a method flowchart of a method for manufacturing a display module provided by an embodiment of the present disclosure.
  • the method for manufacturing the display module can be used to manufacture the display module 2 provided by the foregoing embodiment. It can include the following steps:
  • Step 701 forming a photoelectric conversion unit on a base substrate to obtain a display panel.
  • the display panel has a transparent area, and the photoelectric conversion unit is located in the transparent area of the display panel.
  • Step 702 Form a brightness adjustment component.
  • Step 703 Connect the brightness adjustment component with the photoelectric conversion unit to obtain a display module.
  • the photoelectric conversion unit is configured to convert optical signals of ambient light in the environment where the display panel is located into electrical signals.
  • the brightness adjustment component is configured to adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit.
  • the manufactured display module includes a display panel and a brightness adjustment component, the display panel includes a photoelectric conversion unit, and the photoelectric conversion unit is arranged in a transparent area of the display panel.
  • the photoelectric conversion unit is connected with the brightness adjustment component, the photoelectric conversion unit can convert the optical signal of the ambient light in the environment where the display panel is located into an electrical signal, and the brightness adjustment component can adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit Since the photoelectric conversion unit is arranged in the display panel, the accuracy of adjusting the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit is relatively high; in addition, the material of the photoelectric conversion unit is a transparent material, and the photoelectric conversion unit is arranged in In the transparent area, and the transparent area is in the non-display area, the photoelectric conversion unit will not affect the aperture ratio and resolution of the display panel.
  • FIG. 9 is a method flowchart of another method for manufacturing a display module provided by an embodiment of the present disclosure.
  • the method for manufacturing the display module can be used to manufacture the display module 2 provided by the foregoing embodiment.
  • the method can include the following steps:
  • Step 801 Form a switch unit on a base substrate.
  • the base substrate may be a transparent substrate, for example, the base substrate may be a rigid substrate made of non-metallic materials with a certain degree of robustness, such as glass, quartz, or transparent resin; or, the base substrate It is a flexible substrate made of flexible materials such as PI.
  • the switch unit may be a TFT, and forming the switch unit on the base substrate means that the TFT is formed on the base substrate.
  • forming the switch unit 23 on the base substrate 21 includes: sequentially forming a gate 231, a gate insulating layer 232, an active layer 233, an etching stop layer 234, and a source and drain layer on the base substrate 21.
  • the source and drain layer 235 includes a source electrode 2351 and a drain electrode 2352.
  • the source electrode 2351 and the drain electrode 2352 are not in contact.
  • the etching stop layer 234 is formed with a through hole corresponding to the source electrode 2351 and a through hole corresponding to the drain electrode 2352.
  • the hole, the source electrode 2351 and the drain electrode 2352 are respectively in contact with the active layer 233 through corresponding through holes.
  • forming the switch unit 23 on the base substrate 21 may include the following steps:
  • Step (1) forming a gate material layer on the base substrate 21 by means of Chemical Vapor Deposition (CVD), coating or sputtering, and processing the gate material layer through a patterning process to obtain the gate 231.
  • CVD Chemical Vapor Deposition
  • step (2) a gate insulating layer 232 is formed on the base substrate 21 on which the gate 231 is formed by CVD, coating, or sputtering.
  • Step (3) forming an active layer material layer on the base substrate 21 on which the gate insulating layer 232 is formed by CVD, coating or sputtering, etc., and processing the active layer material layer through a patterning process to obtain the active layer.
  • Layer 233 forming an active layer material layer on the base substrate 21 on which the gate insulating layer 232 is formed by CVD, coating or sputtering, etc.
  • Step (4) forming an etching material layer on the base substrate 21 on which the active layer 233 is formed by means of CVD, coating or sputtering, and processing the etching material layer through a patterning process to obtain the etching stop layer 234 .
  • Step (5) forming a conductive material layer on the base substrate 21 on which the etching barrier layer 234 is formed by CVD, coating, or sputtering, and processing the conductive material layer through a patterning process to obtain the source and drain layer 235
  • the source and drain layer 235 includes a source electrode 2351 and a drain electrode 2352.
  • the conductive material layer may be a metal material layer.
  • the display panel 20 includes a non-transparent area (including the non-transparent area of the display area d and the non-transparent area c2 of the non-display area c), and the base substrate 21 has a non-transparent area corresponding to
  • the switch unit 23 may be located in the area corresponding to the non-transparent area of the display panel 20 on the base substrate 21 (that is, the orthographic projection area of the non-transparent area on the base substrate 21).
  • Step 802 forming a photoelectric conversion unit on the base substrate on which the switch unit is formed.
  • the photoelectric conversion unit may be a PIN junction photodiode.
  • FIG. 10 is a flowchart of a method for forming a photoelectric conversion unit provided by an embodiment of the present disclosure. The method uses the photoelectric conversion unit as a PIN junction photodiode. Taking a diode as an example, the method may include the following sub-steps:
  • a first electrode and a PIN structure are sequentially formed on the base substrate on which the switch unit is formed.
  • the first electrode 221 is connected to the drain 2352 of the switch unit 23.
  • the PIN structure 222 includes: a P-type semiconductor layer 2221, an intrinsic semiconductor layer 2222, and an N-type semiconductor layer 2223.
  • a first substrate 21 is formed on the base substrate 21 on which the switch unit 23 is formed.
  • the electrode 221 and the PIN structure 222 may include the following steps:
  • Step (1) forming a conductive material layer on the base substrate 21 on which the switch unit 23 is formed by CVD, coating or sputtering, and processing the conductive material layer through a patterning process to obtain the first electrode 221.
  • the conductive material layer may be an ITO material layer.
  • forming the P-type semiconductor material layer may include forming the intrinsic semiconductor material layer by CVD, coating or sputtering, and then P-type doping the intrinsic semiconductor material layer to obtain the P-type semiconductor material layer to form the N-type semiconductor material
  • the layer may include forming an intrinsic semiconductor material layer by CVD, coating or sputtering, and then performing N-type doping on the intrinsic semiconductor material layer to obtain an N-type semiconductor material layer.
  • the material of the P-type semiconductor material layer may be P-type a-Si
  • the material of the intrinsic semiconductor material layer may be intrinsic a-Si
  • the material of the N-type semiconductor material layer may be N-type a-Si.
  • the embodiments of the present disclosure are described by taking the simultaneous formation of the P-type semiconductor layer 2221, the intrinsic semiconductor layer 2222, and the N-type semiconductor layer 2223 as an example.
  • a semiconductor material layer for example, After the P-type semiconductor material layer, the semiconductor material layer is processed through a patterning process to obtain the corresponding semiconductor layer (for example, the P-type semiconductor layer 2221).
  • a second electrode is formed on the base substrate with the PIN structure formed.
  • the second electrode 223 includes a lower electrode 2231 and an upper electrode 2232 that are superimposed.
  • the display panel 20 also includes a passivation layer 24 disposed between the lower electrode 2231 and the upper electrode 2232.
  • the passivation layer 24 has The through hole 241 and the upper electrode 2232 are connected to the lower electrode 2231 through the through hole 241.
  • FIG. 11 is a flowchart of a method for forming a second electrode according to an embodiment of the present disclosure. The method may include the following sub-steps:
  • Sub-step 8022a forming a lower electrode on the base substrate with the PIN structure formed.
  • a conductive material layer may be formed on the base substrate 21 with the PIN structure 222 formed by CVD, coating, or sputtering, and the conductive material layer may be processed through a patterning process to obtain the lower electrode 2231.
  • the conductive material layer may be an ITO material layer.
  • Sub-step 8022b forming a passivation layer on the base substrate on which the lower electrode is formed.
  • the passivation layer material layer may be formed on the base substrate 21 where the lower electrode 2231 is formed by CVD, coating, or sputtering, etc., and the passivation layer material layer is processed through a patterning process to obtain the passivation layer 24.
  • the passivation layer 24 has through holes 241 thereon.
  • Sub-step 8022c forming an upper electrode on the base substrate on which the passivation layer is formed.
  • a conductive material layer can be formed on the base substrate 21 with the passivation layer 24 formed by CVD, coating, or sputtering, and the conductive material layer can be processed through a patterning process to obtain the upper electrode 2232, the upper electrode 2232 It is connected to the lower electrode 2231 through the through hole 241 on the passivation layer 24.
  • the conductive material layer may be an ITO material layer.
  • the display panel 20 includes a transparent area c1
  • the base substrate 21 has an area corresponding to the transparent area c1 (that is, the orthographic projection area of the transparent area c1 on the base substrate 21).
  • the orthographic projection of the photoelectric conversion unit 22 on the base substrate 21 may be located in an area on the base substrate 21 corresponding to the transparent area of the display panel.
  • Step 803 A display unit is formed on the base substrate to obtain a display panel.
  • forming the display unit 25 on the base substrate 21 includes: forming a TFT 251, an anode 252, a pixel definition layer 253, a light emitting layer 254, and a cathode 255 on the base substrate 21 in sequence.
  • forming the display unit 25 on the base substrate 21 may include the following steps:
  • Step (1) forming a TFT 251 on the base substrate 21, the implementation process of this step can refer to the process of forming the switch unit 23 on the base substrate 21 in the above step 801, which is not repeated in the embodiment of the present disclosure. It should be noted that in practical applications, the process of forming the TFT 251 in this step (1) can be performed at the same time as the process of forming the switch unit 23 in the above step 801, and the TFT 251 in the display unit can be on the same layer as the switch unit 23. Set up.
  • step (2) a conductive material layer is formed on the base substrate 21 on which the TFT 251 is formed by CVD, coating, or sputtering, and the conductive material layer is processed through a patterning process to obtain the anode 252.
  • Step (3) forming a pixel defining material layer on the base substrate 21 with the anode 252 formed by CVD, coating or sputtering, and processing the pixel defining material layer through a patterning process to obtain the pixel defining layer 253.
  • Step (4) forming a light-emitting material layer on the base substrate 21 on which the pixel defining layer 253 is formed by CVD, coating, or sputtering, and processing the light-emitting material layer through a patterning process to obtain the light-emitting layer 254.
  • this step (4) is described by taking the formation of a light-emitting layer of one color as an example. In practical applications, the display panel includes light-emitting layers of different colors. For the formation process of the light-emitting layer of each color, please refer to this Step (4), the embodiment of the present disclosure will not be repeated here.
  • step (5) a conductive material layer is formed on the base substrate 21 on which the light-emitting layer 254 is formed by CVD, coating or sputtering, and the conductive material layer is processed through a patterning process to obtain the cathode 255.
  • Step 804 Form a brightness adjustment component.
  • the brightness adjustment component may be a functional component in an integrated circuit, and forming the brightness adjustment component means forming an integrated circuit.
  • forming the brightness adjustment component means forming an integrated circuit.
  • Step 805 Connect the brightness adjustment component with the photoelectric conversion unit to obtain a display module.
  • the brightness adjustment component may be a functional component in an integrated circuit.
  • the integrated circuit may be bound to the display panel 20 to connect the brightness adjustment component 30 with the photoelectric conversion unit 22.
  • both the display panel 20 and the integrated circuit have a binding area, and the display panel 20 can be bound with the integrated circuit through the binding area on the display panel 20 and the binding area on the integrated circuit, so that the brightness adjustment component 30 Connect with the photoelectric conversion unit 22.
  • the one patterning process described in the embodiments of the present disclosure generally includes: photoresist coating, exposure, development, etching, and photoresist stripping.
  • step 804 can be performed between step 803 and step 805, or step 804 can be performed before step 801 to step 803; for another example, step 801 can be performed simultaneously with the step of forming the TFT in the display unit 25 in step 803.
  • the manufactured display module includes a display panel and a brightness adjustment component, the display panel includes a photoelectric conversion unit, and the photoelectric conversion unit is arranged in a transparent area of the display panel.
  • the photoelectric conversion unit is connected with the brightness adjustment component, the photoelectric conversion unit can convert the optical signal of the ambient light in the environment where the display panel is located into an electrical signal, and the brightness adjustment component can adjust the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit Since the photoelectric conversion unit is arranged in the display panel, the accuracy of adjusting the brightness of the display panel based on the electrical signal converted by the photoelectric conversion unit is relatively high; in addition, the material of the photoelectric conversion unit is a transparent material, and the photoelectric conversion unit is arranged in In the transparent area, and the transparent area is in the non-display area, the photoelectric conversion unit will not affect the aperture ratio and resolution of the display panel.
  • An embodiment of the present disclosure provides a display device, which includes the display module 2 provided in the foregoing embodiment of the present disclosure.

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Abstract

一种显示模组（2）及其制造方法、显示装置，属于显示技术领域。该显示模组（2）包括：显示面板（20）和亮度调节组件（30），该显示面板（20）包括：衬底基板（21）以及设置在衬底基板（21）上的光电转换单元（22），显示面板（20）具有透明区域（c1），光电转换单元（22）位于透明区域（c1）中，光电转换单元（22）与亮度调节组件（30）连接；光电转换单元（22）被配置为将显示面板（20）所处环境中的环境光的光信号转换为电信号；亮度调节组件（30）被配置为基于光电转换单元（22）转换得到的电信号调节显示面板（20）的亮度。

Description

显示模组及其制造方法、显示装置
本公开要求于2019年02月20日提交的申请号为201910125635.7、发明名称为“显示模组及其制造方法、显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及一种显示模组及其制造方法、显示装置。
背景技术
随着显示技术的发展，透明显示模组作为一种新型的显示模组逐渐被应用于建筑物窗户、汽车车窗与商店橱窗等。透明显示模组包括透明显示面板，透明显示面板具有透明显示状态以使观看者能够观看到显示面板显示的图像以及位于显示面板背后的景象。例如，具有透明显示面板的商店橱窗能够使观看者观看到商店橱窗显示的图像以及商店内摆放的商品。
发明内容
本公开实施例提供了一种显示模组及其制造方法、显示装置，本公开实施例的技术方案如下：
第一方面，提供了一种显示模组，所述显示模组包括：显示面板和亮度调节组件，所述显示面板包括衬底基板以及设置在所述衬底基板上的光电转换单元，所述显示面板具有透明区域，所述光电转换单元位于所述透明区域中，所述光电转换单元与所述亮度调节组件连接；
所述光电转换单元被配置为将所述显示面板所处环境中的环境光的光信号转换为电信号；
所述亮度调节组件被配置为基于所述光电转换单元转换得到的所述电信号调节所述显示面板的亮度。
可选的，所述显示面板还包括：设置在所述衬底基板上的开关单元，所述开关单元与所述光电转换单元连接。
可选的，所述显示面板包括显示区域和非显示区域，所述非显示区域包括非透明区域和所述透明区域，所述显示区域包括非透明区域，所述开关单元位于所述非显示区域的所述非透明区域中，或，所述开关单元位于所述显示区域的所述非透明区域中。
可选的，所述光电转换单元为光电二极管。
可选的，所述光电转换单元包括：沿远离所述衬底基板的方向依次叠加的第一电极、PIN结构和第二电极，所述第一电极与所述开关单元连接。
可选的，所述开关单元为薄膜晶体管TFT，所述TFT的漏极与所述第一电极连接。
可选的，所述第一电极的材料、所述PIN结构的材料和所述第二电极的材料均为透明材料。
可选的，所述第二电极包括叠加设置的下部电极和上部电极，所述显示面板还包括：设置在所述下部电极与所述上部电极之间的钝化层，所述钝化层上具有通孔，所述上部电极通过所述通孔与所述下部电极连接。
可选的，所述显示面板还包括：位于所述衬底基板上的显示单元，所述显示单元包括：沿远离所述衬底基板的方向依次设置的TFT、阳极、像素定义层、发光层和阴极。
第二方面，提供了一种显示模组的制造方法，所述方法包括：
在衬底基板上形成光电转换单元，得到显示面板，所述显示面板具有透明区域，所述光电转换单元位于所述透明区域中；
形成亮度调节组件；
将所述亮度调节组件与所述光电转换单元连接，得到显示模组；
其中，所述光电转换单元被配置为将所述显示面板所处环境中的环境光的光信号转换为电信号；
所述亮度调节组件被配置为基于所述光电转换单元转换得到的所述电信号调节所述显示面板的亮度。
可选的，在衬底基板上形成光电转换单元之前，所述方法还包括：在衬底基板上形成开关单元；
所述在衬底基板上形成光电转换单元，包括：在形成有所述开关单元的衬底基板上形成光电转换单元，所述开关单元与所述光电转换单元连接。
可选的，所述光电转换单元为光电二极管，所述在形成有所述开关单元的 衬底基板上形成光电转换单元，包括：
在形成有所述开关单元的衬底基板上依次形成第一电极和PIN结构，所述第一电极与所述开关单元连接；
在形成有所述PIN结构的衬底基板上形成第二电极，所述第一电极、所述PIN结构和所述第二电极沿远离所述衬底基板的方向依次叠加。
可选的，所述在衬底基板上形成开关单元，包括：在衬底基板上形成TFT，所述TFT的漏极与所述第一电极连接。
可选的，所述在形成有所述PIN结构的衬底基板上形成第二电极，包括：在形成有所述PIN结构的衬底基板上形成下部电极；
所述方法还包括：在形成有所述下部电极的衬底基板上形成钝化层，所述钝化层具有通孔，所述下部电极通过所述通孔部分露出；
所述在形成有所述PIN结构的衬底基板上形成第二电极，还包括：在形成有所述钝化层的衬底基板上形成上部电极，所述上部电极通过所述通孔与所述下部电极连接。
可选的，所述方法还包括：在所述衬底基板上形成显示单元。
第三方面，提供了一种显示装置，包括第一方面或第一方面的任一可选方式所述的显示模组。
附图说明
图1为本公开实施例所涉及的一种显示面板的俯视图。
图2为本公开实施例提供的一种显示模组的俯视图。
图3为图2所示的显示模组的部分区域的放大图。
图4为本公开实施例提供的另一种显示模组的部分区域的放大图。
图5为图4所示的显示模组的A-B位置的截面示意图。
图6为本公开实施例提供的一种PIN结构的示意图。
图7为图4所示的显示模组的C-D位置的截面示意图。
图8为本公开实施例提供的一种显示模组的制造方法的方法流程图。
图9为本公开实施例提供的另一种显示模组的制造方法的方法流程图。
图10为本公开实施例提供的一种形成光电转换单元的方法流程图。
图11为本公开实施例提供的一种形成第二电极的方法流程图。
具体实施方式
为了使本公开的原理和技术方案更加清楚，下面将结合附图对本公开作进一步地详细描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本公开保护的范围。
请参考图1，图1为本公开实施例所涉及的一种显示面板10的俯视图，该显示面板10具有透明区域a和非透明区域b，非透明区域b设置有用于显示的像素单元11，像素单元11包括红色子像素单元111、绿色子像素单元112以及蓝色子像素单元113。
目前，当上述显示面板10应用于显示装置时，通常采用下述两种方法中的至少一种对上述显示面板10进行亮度调节：
第一种方法：显示装置中设置有亮度调节按钮，用户可以通过该亮度调节按钮手动调节显示面板的亮度。但是手动调节的准确性较低，且手动调节的过程较为复杂。
第二种方法：显示装置中设置有用于对环境光进行感测的感光区域，该感光区域位于显示面板之外，显示装置根据感光区域感测到的环境光的亮度调节显示面板的亮度。但是，由于感光区域位于显示面板之外，因此根据感光区域感测到的亮度调节显示面板的亮度的准确性较低，容易出现误调节的情况；此外，感光区域位于显示面板之外还会影响显示装置的外观设计。
本公开实施例提供了一种显示模组及其制造方法、显示装置，显示模组包括显示面板和亮度调节组件，显示面板的透明区域中设置有光电转换单元，光电转换单元可以将显示面板所处环境中的环境光的光信号转换为电信号，亮度调节组件可以基于光电转换单元转换得到的电信号调节显示面板的亮度。由于无需手动调节显示面板的亮度且光电转换单元位于显示面板中，因此，对显示面板进行亮度调节的准确性较高。此外，光电转换单元的材料为透明材料，将光电转换单元设置于透明区域中，且透明区域位于非显示区域中，因此该光电转换单元不会影响显示面板的开口率及分辨率，也即是，本公开实施例提供的方案在不影响显示面板的开口率及分辨率的前提下实现了对显示面板亮度的调节。本公开的详细方案请参考下述实施例的描述。
请参考图2和图3，图2为本公开实施例提供的一种显示模组2的俯视图， 图3为图2所示的显示模组2的区域E的放大图，参见图2和图3，该显示面板20包括显示区域d和非显示区域c，显示区域d包括非透明区域(图2和图3中均未标出)，非显示区域c包括透明区域c1和非透明区域c2，显示区域d设置有阵列排布的多个像素单元(图2和图3中均未标出)，每个像素单元包括红色子像素(图2和图3中均未标出)、绿色子像素(图2和图3中均未标出)和蓝色子像素(图2和图3中均未标出)。
如图2和图3所示，该显示模组2包括：显示面板20和亮度调节组件30，该显示面板20包括衬底基板21以及设置在衬底基板21上的光电转换单元22，该显示面板20具有透明区域c1，光电转换单元22位于透明区域c1中，光电转换单元22与亮度调节组件30连接。
其中，光电转换单元22被配置为将显示面板20所处环境中的环境光的光信号转换为电信号，亮度调节组件30被配置为基于光电转换单元22转换得到的电信号调节显示面板20的亮度。
综上所述，本公开实施例提供的显示模组，包括显示面板和亮度调节组件，显示面板包括光电转换单元，光电转换单元设置在显示面板的透明区域，且光电转换单元与亮度调节组件连接，光电转换单元能够将显示面板所处环境中的环境光的光信号转换为电信号，亮度调节组件能够基于光电转换单元转换得到的电信号调节显示面板的亮度，由于该光电转换单元设置在显示面板中，因此基于光电转换单元转换得到的电信号调节显示面板的亮度的准确性较高。
可选的，上述衬底基板21可以为透明基板，例如，衬底基板可以为采用玻璃、石英或透明树脂等具有一定坚固性的导光且非金属材料制成的硬质基板；或者，衬底基板为采用聚酰亚胺(Polyimide，PI)等柔性材料制成的柔性基板。显示模组2可以包括与显示面板20绑定的集成电路(Integrated Circuit，IC)，该集成电路可以是驱动IC，亮度调节组件30可以为集成电路中的功能组件。
其中，光电转换单元22位于透明区域c1中，也即是该光电转换单元22位于非显示区域c中，这样，可以避免光电转换单元22对显示面板20的开口率以及分辨率的影响。本公开实施例提供的显示模组2可以在不影响显示面板20的开口率以及分辨率的情况下，提高显示面板20亮度调节的准确性。
可选的，请参考图4，图4为本公开实施例提供的另一种显示模组2的部分区域的放大图，在图3的基础上，显示面板20还包括：设置在衬底基板21上的开关单元23，开关单元23与光电转换单元22连接，开关单元23用于对光电 转换单元22进行开关控制，换句话来讲，开关单元23用于控制光电转换单元22是否工作，在开关单元23导通时，光电转换单元22工作，光电转换单元22将光信号转换为电信号，在开关单元23截止时，光电转换单元22不工作，也即是，光电转换单元22不进行光信号与电信号的转换。可选的，如图4所示，上述开关单元23位于显示区域d中，且具体是位于显示区域d的非透明区域中。其中，图4是以该开关单元23位于显示区域d的非透明区域为例进行说明的，实际应用中，该开关单元23还可以位于非显示区域的非透明区域中，本公开实施例对此不做限定。由于开关单元23通常采用非透明材料制成，因此，将开关单元23设置在非透明区域中，能够避免开关单元23对透明区域c1的透明度的影响。
需要说明的是，图4所示的光电转换单元22和开关单元23在显示面板20中的位置只是一示意性说明，在实际应用时，光电转换单元22还可以设置在透明区域c1的其他位置，开关单元23可以设置在非透明区域的其他位置，只要保证开关单元23与光电转换单元22连接即可，本公开实施例对此不做限定。
请参考图5，图5为图4所示的显示模组2在AB位置的截面示意图。如图5所示，光电转换单元22为光电二极管，该光电转换单元22包括：沿远离衬底基板21的方向依次叠加的第一电极221、PIN结构222和第二电极223，第一电极221与开关单元23连接。第一电极221的材料、PIN结构222的材料和第二电极223的材料均可以为透明材料，以降低光电转换单元22对透明区域c1的透明度的影响，示例的，该第一电极221的材料和第二电极223的材料可以为氧化铟锡(Indium tin oxide，ITO)。可选的，如图5所示，第二电极223包括叠加设置的下部电极2231和上部电极2232，该显示面板20还包括：设置在下部电极2231与上部电极2232之间的钝化层24，钝化层24上具有通孔241，上部电极2232通过通孔241与下部电极2231连接。其中，上部电极2232能够增大光电转换单元22的感光区域，便于光电转换单元22对环境光进行感测。请参考图6，图6为本公开实施例提供的一种PIN结构222的示意图，该PIN结构222包括：依次叠加的P型半导体层2221、本征半导体层2222和N型半导体层2223，P型半导体层2221相对于N型半导体层2223可以靠近第一电极221，或者P型半导体层2221相对于N型半导体层2223远离第一电极221，本公开实施例对此不做限定。其中，该P型半导体层2221可以为P型掺杂的非晶硅(a-Si)薄膜，N型半导体层2223可以为N型掺杂的a-Si薄膜，本征半导体层 2222可以为a-Si薄膜。可选的，该P型半导体层2221可以掺杂有硼(B)离子，N型半导体层2223可以掺杂有磷(P)离子。
上述具有PIN结构222的光电二极管也可以称为PIN结光电二极管，该PIN结光电二极管可以基于光生伏特效应(photovoltaic effect)进行光电转换，该结构的光电转换单元对光照十分敏感，能够准确的感测到环境光并将环境光的光信号转换为电信号，以便于亮度调节组件30对显示面板20的亮度进行准确调节。其中，PIN结光电二极管的工作原理为：当光线照射到该PIN结光电二极管上时，该光线的能量将P型半导体层2221和N型半导体层2223的电子从共价键中激发出来，从而在PIN结光电二极管中产生电子-空穴对，PIN结光电二极管中被激发出来的部分电子和空穴在未复合(即在PIN结光电二极管被光线照射后，被激发出来的部分电子和空穴在该PIN结光电二极管趋向稳定的过程中未被“复合中心”俘获从而消失)之前达到空间电荷区，在空间电荷区的内电场的作用下，电子向带有正电的N型半导体层2223移动，空穴向带有负电的P型半导体层2221移动，在一段时间后，由于N型半导体层2223存储了过剩的电子，其带负电，P型半导体层2221存储了过剩的空穴，其带正电，从而在N型半导体层2223和P型半导体层2221之间的本征半导体层2222上产生了电动势，相应产生了电流，该电流的逐渐累积使该PIN结光电二极管具有光电转换功能。
需要说明的是，本公开实施例所描述的光电转换单元22的结构仅仅是示例性的，实际应用中，光电转换单元的结构也可以为其他结构，只要能够实现对显示面板所处环境的环境光的准确感测即可。
可选的，上述开关单元23可以为薄膜晶体管(Thin Film Transistor，TFT)，则如图5所示，该开关单元23包括：沿远离衬底基板21的方向依次设置的栅极231、栅绝缘层232、有源层233、刻蚀阻挡层234以及源漏极层235，源漏极层235包括源极2351和漏极2352，源极2351与漏极2352不接触，漏极2352与第一电极221连接。需要说明的是，如图5所示，本公开实施例是以开关单元23为底栅结构的TFT为例进行说明的，在实际应用中，该开关单元可以为顶栅结构的TFT，只要能够实现对光电转换单元的开关控制即可，本公开实施例对此不做限定。实际应用中，该显示模组2还可以包括控制组件(图中未示出)，该控制组件可以与开关单元的源极2351连接，控制组件用于控制开关单元23是否导通，该控制组件可以为显示模组2的集成电路中的功能组件。此外，参 见图5并结合图4，开关单元23的栅绝缘层232和刻蚀阻挡层234延伸至显示面板20的透明区域c1，光电转换单元22可以设置在刻蚀阻挡层234远离衬底基板21的一面上。
可选的，如上述图4所示，显示面板20还包括：位于衬底基板21上的显示单元25。则请参考图7，图7为图4所示的显示模组2在CD位置的截面示意图，该显示单元25包括：沿远离衬底基板21的方向依次设置的TFT 251、阳极252、像素定义层253、发光层254和阴极255。该TFT 251包括：沿远离衬底基板21的方向依次设置的栅极2511、栅绝缘层2512、有源层2513、刻蚀阻挡层2514以及源漏极层2515，源漏极层2515包括源极2515a和漏极2515b，源极2515a与漏极2515b不接触，漏极2515b与阳极252连接。其中，TFT 251的栅绝缘层2512与开关单元23的栅绝缘层232为同一膜层，TFT 251的刻蚀阻挡层2514与开关单元23的刻蚀阻挡层234为同一膜层。TFT 251可以与上述开关单元23同步制造，从而简化显示面板20的制造工艺，提高生产效率。需要说明的是，实际应用中，显示单元25可以覆盖开关单元23，以避免开关单元23的设置对显示单元25的开口率以及显示面板20的分辨率的影响，本公开实施例为了更清晰的描述开关单元23的完整结构以及开关单元23在衬底基板21上的位置，在图4中未示出显示单元25中覆盖开关单元23的部分，因此，从图4来看，显示单元25(也即是图4中的红色显示单元R和绿色显示单元G)具有缺口。
需要说明的是，根据以上描述不难理解，本公开实施例提供的显示模组2可以自动进行显示面板20的亮度调节，实际应用中，当显示模组2应用于显示装置时，可以在显示装置中设置亮度调整开关(或按钮)，用户可以通过亮度调整开关开启或关闭显示模组的亮度调节功能，当显示模组的亮度调节功能开启时，显示模组基于本公开实施例提供的方案对显示面板进行亮度调节，当显示模组的亮度调节功能关闭时，显示模组不自动对显示面板进行亮度调节。
还需要说明的是，本公开实施例提供的显示模组可以为有机发光二极管(Organic Light-Emitting Diode，OLED)显示模组，本公开实施例中仅仅描述了该显示模组中与显示以及亮度调节相关的结构，实际应用中，该显示模组以及该显示模组中的显示面板还包括其他结构，例如显示面板还包括封装结构和盖板等结构，本公开实施例在此不再赘述。
综上所述，本公开实施例提供的显示模组，包括显示面板和亮度调节组件， 显示面板包括光电转换单元，光电转换单元设置在显示面板的透明区域，且光电转换单元与亮度调节组件连接，光电转换单元能够将显示面板所处环境中的环境光的光信号转换为电信号，亮度调节组件能够基于光电转换单元转换得到的电信号调节显示面板的亮度，由于该光电转换单元设置在显示面板中，因此基于光电转换单元转换得到的电信号调节显示面板的亮度的准确性较高；此外，光电转换单元的材料为透明材料，将光电转换单元设置于透明区域中，且透明区域位于非显示区域中，因此该光电转换单元不会影响显示面板的开口率及分辨率。
请参考图8，图8为本公开实施例提供的一种显示模组的制造方法的方法流程图，该显示模组的制造方法可以用于制造上述实施例提供的显示模组2，该方法可以包括以下步骤：
步骤701、在衬底基板上形成光电转换单元，得到显示面板。
该显示面板具有透明区域，光电转换单元位于显示面板的透明区域中。
步骤702、形成亮度调节组件。
步骤703、将亮度调节组件与光电转换单元连接，得到显示模组。
其中，光电转换单元被配置为将显示面板所处环境中的环境光的光信号转换为电信号。亮度调节组件被配置为基于光电转换单元转换得到的电信号调节显示面板的亮度。
综上所述，本公开实施例提供的显示模组的制造方法，所制造的显示模组包括显示面板和亮度调节组件，显示面板包括光电转换单元，光电转换单元设置在显示面板的透明区域，且光电转换单元与亮度调节组件连接，光电转换单元能够将显示面板所处环境中的环境光的光信号转换为电信号，亮度调节组件能够基于光电转换单元转换得到的电信号调节显示面板的亮度，由于该光电转换单元设置在显示面板中，因此基于光电转换单元转换得到的电信号调节显示面板的亮度的准确性较高；此外，光电转换单元的材料为透明材料，将光电转换单元设置于透明区域中，且透明区域位于非显示区域中，因此该光电转换单元不会影响显示面板的开口率及分辨率。
请参考图9，图9为本公开实施例提供的另一种显示模组的制造方法的方法流程图，该显示模组的制造方法可以用于制造上述实施例提供的显示模组2，该 方法可以包括以下步骤：
步骤801、在衬底基板上形成开关单元。
可选的，衬底基板可以为透明基板，例如，衬底基板可以为采用玻璃、石英或者透明树脂等具有一定坚固性的导光且非金属材料制成的硬质基板；或者，衬底基板为采用PI等柔性材料制成的柔性基板。
其中，开关单元可以为TFT，在衬底基板上形成开关单元也即是在衬底基板上形成TFT。如图5所示，在衬底基板21上形成开关单元23包括：在衬底基板21上依次形成栅极231、栅绝缘层232、有源层233、刻蚀阻挡层234以及源漏极层235，源漏极层235包括源极2351和漏极2352，源极2351与漏极2352不接触，刻蚀阻挡层234上形成有与源极2351对应的通孔以及与漏极2352对应的通孔，源极2351和漏极2352分别通过相应的通孔与有源层233接触。
示例的，在衬底基板21上形成开关单元23可以包括如下步骤：
步骤(1)、通过化学气相沉积(Chemical Vapor Deposition，CVD)、涂敷或者溅射等方式在衬底基板21上形成栅极材质层，通过一次构图工艺对栅极材质层进行处理得到栅极231。
步骤(2)、通过CVD、涂敷或者溅射等方式在形成有栅极231的衬底基板21上形成栅绝缘层232。
步骤(3)、通过CVD、涂敷或者溅射等方式在形成有栅绝缘层232的衬底基板21上形成有源层材质层，通过一次构图工艺对有源层材质层进行处理得到有源层233。
步骤(4)、通过CVD、涂敷或者溅射等方式在形成有源层233的衬底基板21上形成刻蚀材质层，通过一次构图工艺对刻蚀材质层进行处理得到刻蚀阻挡层234。
步骤(5)、通过CVD、涂敷或者溅射等方式在形成有刻蚀阻挡层234的衬底基板21上形成导电材质层，通过一次构图工艺对导电材质层进行处理得到源漏极层235，源漏极层235包括源极2351和漏极2352。其中，该导电材质层可以为金属材质层。
需要说明的是，如图2所示，显示面板20包括非透明区域(包括显示区域d的非透明区域和非显示区域c的非透明区域c2)，衬底基板21上具有与非透明区域对应的区域(也即是非透明区域在衬底基板21上的正投影区域)，开关单元23可以位于衬底基板21上与显示面板20的非透明区域对应的区域中。
步骤802、在形成有开关单元的衬底基板上形成光电转换单元。
其中，光电转换单元可以为PIN结光电二极管，示例的，请参考图10，图10为本公开实施例提供的一种形成光电转换单元的方法流程图，该方法以光电转换单元为PIN结光电二极管为例进行说明，该方法可以包括以下子步骤：
子步骤8021、在形成有开关单元的衬底基板上依次形成第一电极和PIN结构。
如图5所示，第一电极221与开关单元23的漏极2352连接。此外，如图6所示，PIN结构222包括：P型半导体层2221、本征半导体层2222和N型半导体层2223，示例的，在形成有开关单元23的衬底基板21上依次形成第一电极221和PIN结构222可以包括如下步骤：
步骤(1)、通过CVD、涂敷或者溅射等方式在形成有开关单元23的衬底基板21上形成导电材质层，通过一次构图工艺对导电材质层进行处理得到第一电极221。其中，该导电材质层可以为ITO材质层。
步骤(2)、在形成有第一电极221的衬底基板21上依次形成P型半导体材质层、本征半导体材质层和N型半导体材质层，然后通过一次构图工艺对P型半导体材质层、本征半导体材质层和N型半导体材质层进行处理得到P型半导体层2221、本征半导体层2222和N型半导体层2223，也即是得到PIN结构222。其中，形成P型半导体材质层可以包括通过CVD、涂敷或者溅射等方式形成本征半导体材质层，然后对本征半导体材质层进行P型掺杂得到P型半导体材质层，形成N型半导体材质层可以包括通过CVD、涂敷或者溅射等方式形成本征半导体材质层，然后对本征半导体材质层进行N型掺杂得到N型半导体材质层。示例的，该P型半导体材质层的材料可以为P型a-Si，本征半导体材质层的材料可以为本征a-Si，N型半导体材质层的材料可以为N型a-Si。
需要说明的是，本公开实施例是以同时形成P型半导体层2221、本征半导体层2222和N型半导体层2223为例进行说明的，实际应用中，可以在每形成一半导体材质层(例如P型半导体材质层)后，就通过一次构图工艺对该半导体材质层进行处理得到相应的半导体层(例如P型半导体层2221)。
子步骤8022、在形成有PIN结构的衬底基板上形成第二电极。
如图5所示，第二电极223包括叠加设置的下部电极2231和上部电极2232，显示面板20还包括设置在下部电极2231与上部电极2232之间的钝化层24，钝化层24上具有通孔241，上部电极2232通过通孔241与下部电极2231连接。 示例的，请参考图11，图11为本公开实施例提供的一种形成第二电极的方法流程图，该方法可以包括以下子步骤：
子步骤8022a、在形成有PIN结构的衬底基板上形成下部电极。
示例的，可以通过CVD、涂敷或者溅射等方式在形成有PIN结构222的衬底基板21上形成导电材质层，通过一次构图工艺对导电材质层进行处理得到下部电极2231。其中，该导电材质层可以为ITO材质层。
子步骤8022b、在形成有下部电极的衬底基板上形成钝化层。
示例的，可以通过CVD、涂敷或者溅射等方式在形成下部电极2231的衬底基板21上形成钝化层材质层，通过一次构图工艺对钝化层材质层进行处理得到钝化层24，该钝化层24上具有通孔241。
子步骤8022c、在形成有钝化层的衬底基板上形成上部电极。
示例的，可以通过CVD、涂敷或者溅射等方式在形成有钝化层24的衬底基板21上形成导电材质层，通过一次构图工艺对导电材质层进行处理得到上部电极2232，上部电极2232通过钝化层24上的通孔241与下部电极2231连接。其中，该导电材质层可以为ITO材质层。
需要说明的是，如图2所示，显示面板20包括透明区域c1，衬底基板21上具有与透明区域c1对应的区域(也即是透明区域c1在衬底基板21上的正投影区域)，光电转换单元22在衬底基板21上的正投影可以位于衬底基板21上与显示面板的透明区域对应的区域中。
步骤803、在衬底基板上形成显示单元，得到显示面板。
如图7所示，在衬底基板21上形成显示单元25包括：在衬底基板21上依次形成TFT 251、阳极252、像素定义层253、发光层254和阴极255。
示例的，在衬底基板21上形成显示单元25可以包括如下步骤：
步骤(1)、在衬底基板21上形成TFT 251，该步骤的实施过程可以参考上述步骤801中在衬底基板21上形成开关单元23的过程，本公开实施例在此不做赘述。需要说明的是，在实际应用时，该步骤(1)中形成TFT 251的过程可以与上述步骤801中形成开关单元23的过程同时进行，该显示单元中的TFT 251可以与开关单元23同层设置。
步骤(2)、通过CVD、涂敷或者溅射等方式在形成有TFT 251的衬底基板21上形成导电材质层，通过一次构图工艺对导电材质层进行处理得到阳极252。
步骤(3)、通过CVD、涂敷或者溅射等方式在形成有阳极252的衬底基板 21上形成像素定义材质层，通过一次构图工艺对像素定义材质层进行处理得到像素定义层253。
步骤(4)、通过CVD、涂敷或者溅射等方式在形成有像素定义层253的衬底基板21上形成发光材质层，通过一次构图工艺对发光材质层进行处理得到发光层254。需要说明的是，该步骤(4)是以形成一种颜色的发光层为例进行说明的，实际应用中，显示面板包括不同颜色的发光层，每一种颜色的发光层形成过程可以参考该步骤(4)，本公开实施例在此不再赘述。
步骤(5)、通过CVD、涂敷或者溅射等方式在形成有发光层254的衬底基板21上形成导电材质层，通过一次构图工艺对导电材质层进行处理得到阴极255。
步骤804、形成亮度调节组件。
亮度调节组件可以为集成电路中的功能组件，形成亮度调节组件也即是形成集成电路，具体实现过程可以参考相关技术，本公开实施例在此不再赘述。
步骤805、将亮度调节组件与光电转换单元连接，得到显示模组。
可选的，亮度调节组件可以为集成电路中的功能组件，如图2至图4所示，可以将集成电路与显示面板20绑定，以将亮度调节组件30与光电转换单元22连接。可选的，显示面板20和集成电路上均具有绑定区域，可以通过显示面板20上的绑定区域和集成电路上的绑定区域将显示面板20与集成电路绑定，使亮度调节组件30与光电转换单元22连接。
需要说明的是，本公开实施例中所描述的一次构图工艺通常包括：光刻胶涂覆、曝光、显影、刻蚀和光刻胶剥离。
还需要说明的是，本公开实施例提供的显示模组的制造方法步骤的先后顺序可以进行适当调整，步骤也可以根据情况进行相应增减，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化的方法，都应涵盖在本公开的保护范围之内，因此不再赘述。例如，步骤804可以在步骤803与步骤805之间执行，或者步骤804可以在步骤801至步骤803之前执行；再例如，步骤801可以与步骤803中形成显示单元25中的TFT的步骤同时执行。
综上所述，本公开实施例提供的显示模组的制造方法，所制造的显示模组包括显示面板和亮度调节组件，显示面板包括光电转换单元，光电转换单元设置在显示面板的透明区域，且光电转换单元与亮度调节组件连接，光电转换单元能够将显示面板所处环境中的环境光的光信号转换为电信号，亮度调节组件 能够基于光电转换单元转换得到的电信号调节显示面板的亮度，由于该光电转换单元设置在显示面板中，因此基于光电转换单元转换得到的电信号调节显示面板的亮度的准确性较高；此外，光电转换单元的材料为透明材料，将光电转换单元设置于透明区域中，且透明区域位于非显示区域中，因此该光电转换单元不会影响显示面板的开口率及分辨率。
本公开实施例提供了一种显示装置，该显示装置包括本公开上述实施例提供的显示模组2。
本领域技术人员在考虑说明书及实践这里公开的发明后，将容易想到本公开的其它实施方案。本公开旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的权利要求来限制。

Claims (14)

  1. 一种显示模组，包括：显示面板和亮度调节组件，所述显示面板包括衬底基板以及设置在所述衬底基板上的光电转换单元，所述显示面板具有透明区域，所述光电转换单元位于所述透明区域中，所述光电转换单元与所述亮度调节组件连接；
    所述光电转换单元被配置为将所述显示面板所处环境中的环境光的光信号转换为电信号；
    所述亮度调节组件被配置为基于所述光电转换单元转换得到的所述电信号调节所述显示面板的亮度。
  2. 根据权利要求1所述的显示模组，其中，所述显示面板还包括：设置在所述衬底基板上的开关单元，所述开关单元与所述光电转换单元连接。
  3. 根据权利要求2所述的显示模组，其中，所述显示面板包括显示区域和非显示区域，所述非显示区域包括非透明区域和所述透明区域，所述显示区域包括非透明区域，所述开关单元位于所述非显示区域的所述非透明区域中，或，所述开关单元位于所述显示区域的所述非透明区域中。
  4. 根据权利要求2所述的显示模组，其中，所述光电转换单元为光电二极管。
  5. 根据权利要求4所述的显示模组，其中，所述光电转换单元包括：
    沿远离所述衬底基板的方向依次叠加的第一电极、PIN结构和第二电极，所述第一电极与所述开关单元连接。
  6. 根据权利要求5所述的显示模组，其中，所述开关单元为薄膜晶体管TFT，所述TFT的漏极与所述第一电极连接。
  7. 根据权利要求5所述的显示模组，其中，所述第一电极的材料、所述PIN结构的材料和所述第二电极的材料均为透明材料。
  8. 根据权利要求5所述的显示模组，其中，所述第二电极包括叠加设置的下部电极和上部电极，所述显示面板还包括：设置在所述下部电极与所述上部电极之间的钝化层，所述钝化层上具有通孔，所述上部电极通过所述通孔与所述下部电极连接。
  9. 根据权利要求1至8任一项所述的显示模组，其中，所述显示面板还包括：位于所述衬底基板上的显示单元，所述显示单元包括：沿远离所述衬底基板的方向依次设置的TFT、阳极、像素定义层、发光层和阴极。
  10. 一种显示模组的制造方法，其中，所述方法包括：
    在衬底基板上形成光电转换单元，得到显示面板，所述显示面板具有透明区域，所述光电转换单元位于所述透明区域中；
    形成亮度调节组件；
    将所述亮度调节组件与所述光电转换单元连接，得到显示模组；
    其中，所述光电转换单元被配置为将所述显示面板所处环境中的环境光的光信号转换为电信号；
    所述亮度调节组件被配置为基于所述光电转换单元转换得到的所述电信号调节所述显示面板的亮度。
  11. 根据权利要求10所述的方法，其中，在衬底基板上形成光电转换单元之前，所述方法还包括：在衬底基板上形成开关单元；
    所述在衬底基板上形成光电转换单元，包括：在形成有所述开关单元的衬底基板上形成光电转换单元，所述开关单元与所述光电转换单元连接。
  12. 根据权利要求11所述的方法，其中，所述光电转换单元为光电二极管，所述在形成有所述开关单元的衬底基板上形成光电转换单元，包括：
    在形成有所述开关单元的衬底基板上依次形成第一电极和PIN结构，所述第一电极与所述开关单元连接；
    在形成有所述PIN结构的衬底基板上形成第二电极，所述第一电极、所述 PIN结构和所述第二电极沿远离所述衬底基板的方向依次叠加。
  13. 根据权利要求12所述的方法，其中，所述在形成有所述PIN结构的衬底基板上形成第二电极，包括：在形成有所述PIN结构的衬底基板上形成下部电极；
    所述方法还包括：在形成有所述下部电极的衬底基板上形成钝化层，所述钝化层具有通孔，所述下部电极通过所述通孔部分露出；
    所述在形成有所述PIN结构的衬底基板上形成第二电极，还包括：在形成有所述钝化层的衬底基板上形成上部电极，所述上部电极通过所述通孔与所述下部电极连接。
  14. 一种显示装置，其中，包括权利要求1至9任一项所述的显示模组。
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