WO2020165164A1

WO2020165164A1 - Optoelectronic component

Info

Publication number: WO2020165164A1
Application number: PCT/EP2020/053460
Authority: WO
Inventors: Siegfried Herrmann
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2019-02-12
Filing date: 2020-02-11
Publication date: 2020-08-20
Also published as: DE102019103492A1; DE112020000786A5

Abstract

In at least one embodiment, the optoelectronic component (300) comprises an optoelectronic semiconductor chip (100) and a reflective housing (200). The optoelectronic semiconductor chip comprises a semiconductor layer sequence (1) having an active layer (10) which generates primary radiation during the intended operation, and multiple conversion elements (21, 22). The conversion elements (21, 22) are designed to convert the primary radiation into a secondary radiation. The conversion elements (21, 22) are respectively designed as a nanorod or microrod. The conversion elements (21, 22) are embedded in the semiconductor layer sequence (1). The semiconductor chip (100) is mounted in a recess of the housing (200) and surrounded laterally by reflective inner surfaces (205) of the housing (200).

Description

description

OPTOELECTRONIC COMPONENT

An optoelectronic component is specified.

One problem to be solved is to specify an optoelectronic component with a precisely adjustable color locus.

This problem is solved by the subject matter of the independent claim. Advantageous embodiments and

Further training is the subject of the dependent

Claims.

In accordance with at least one embodiment of the optoelectronic component, the latter comprises an optoelectronic component

Semiconductor chip. Here and in the following, a semiconductor chip is a chip that can be handled separately and is electrical

understood contactable element. A semiconductor chip is preferably created by singulation from a composite wafer. In particular, side faces have such

Semiconductor chips then, for example, traces from the

Separation process of the wafer assembly. A

The semiconductor chip preferably comprises exactly one originally contiguous region of the semiconductor layer sequence grown in the wafer assembly. The semiconductor layer sequence of the semiconductor chip is preferably formed in a contiguous manner. A lateral expansion of the semiconductor chip, measured parallel to the main extension plane of the

Semiconductor layer sequence or of the semiconductor chip is, for example, at most 5% or at most 10% greater than the lateral extent of the semiconductor layer sequence. According to at least one embodiment, the optoelectronic component further comprises a housing, for example a reflective housing. For example, the housing can comprise an electrically insulating housing body, for example made of plastic or epoxy or silicone, in which

reflective particles, such as titanium dioxide particles,

are embedded. For example, the housing further comprises a lead frame, in particular a two-pole one

Leadframe over which the component is electrically

is contactable. The lead frame can be embedded in the case body. The poles of the lead frame can be electrically isolated from one another by the housing body.

In accordance with at least one embodiment of the optoelectronic component, the optoelectronic semiconductor chip comprises a semiconductor layer sequence. The semiconductor layer sequence is preferably contiguous, in particular simple

coherent, trained. The semiconductor layer sequence is based, for example, on a III-V

Compound semiconductor material. The semiconductor material is, for example, a nitride compound semiconductor material such as Al _n In _] __ _nm Ga _m N, or a phosphide compound semiconductor material such as Al _n In _] __ _n _ _m Ga _m P, or an arsenide Compound semiconductor material, such as Al _n In _] __ _nm Ga _m As or Al _n In _] __ _nm Ga _m AsP, or an antimonide compound semiconductor material, such as Al _n In _] __ _nm Ga _m Sb, or an antimonide-arsenide compound semiconductor material, where 0 <n <1, 0 <m <1 and m + n <1 in each case. The semiconductor layer sequence can have dopants and additional components. For the sake of simplicity, however, only the essential components of the crystal lattice of the semiconductor layer sequence, i.e. Al, As, Ga, In, N or P, indicated, even if these can be partially replaced and / or supplemented by small amounts of other substances.

The semiconductor layer sequence is preferably based on AlInGaN.

According to at least one embodiment, the

Semiconductor layer sequence an active layer that is im

intended operation generates primary radiation. The active layer of the semiconductor layer sequence contains in particular at least one pn junction and / or at least one quantum well structure in the form of a single one

Quantum Pot, SQW for short, or in the form of a

Multiquant well structure, MQW for short. The active layer can be electromagnetic in normal operation

Primary radiation in the blue or green or red

Spectral range or in the UV range or in the IR range

produce. The active layer of the semiconductor layer sequence can be formed contiguously. A lateral one

Expansion of the active layer is for example

at least 95% of the lateral extent of the

Semiconductor layer sequence.

According to at least one embodiment, the

optoelectronic semiconductor chip several conversion elements. The conversion elements are preferably formed from semiconductor material, for example from one of the aforementioned III-V compound semiconductor materials or from a II-VI compound semiconductor material. For example, the conversion elements each have an active area. In addition to the active area, the conversion elements can each comprise two semiconductor sections, between which the active area is arranged. The semiconductor sections on

different sides of the active area

be endowed differently. The active area of the Conversion elements, for example, are each shaped three-dimensionally. An interface between the active region and an adjoining semiconductor section is, for example, not continuously flat, but rather, for example, curved or has edges. The interface has, for example, the shape of the lateral surface of a cone or a truncated cone or a pyramid or a truncated pyramid.

The conversion elements are preferably not connected to one another, but rather are arranged separately and at a distance from one another. For example, the conversion elements or a subset of the conversion elements are in one level

parallel to a main extension plane of the

Semiconductor layer sequence arranged next to one another. The

Conversion elements can for example be arranged regularly or irregularly along this plane.

According to at least one embodiment, the

Conversion elements set up to convert the primary radiation into secondary radiation. The primary radiation and the secondary radiation comprise different ones

Wavelength ranges. During the conversion, the conversion elements absorb the primary radiation. At a

Recombination of the electron-hole pairs resulting from the absorption, for example in the active area, the secondary radiation is emitted. For example this is

Intensity maximum of the emitted secondary radiation at a wavelength which is at least 50 nm or at least 100 nm or at least 150 nm or at least 200 nm longer than the wavelength at which the primary radiation has its maximum intensity. For example, the

Primary radiation visible light in the blue spectral range and the secondary radiation visible light in the green or yellow or orange or red spectral range.

According to at least one embodiment, the

Conversion elements monolithic with the

Semiconductor layer sequence connected. In particular, the conversion elements can each be designed as a nanorod or as a microrod, in English nanorod or microbar. The

Conversion elements are, for example, elongated

Structures with an aspect ratio of at least 1 or at least 1.3 or at least 2, the aspect ratio defining the ratio of length to diameter. The

Aspect ratio is for example at most 10 or at most 5. Nanorods have a diameter of for example

at least 10 nm and at most 1 gm. Microrods have for

For example a diameter of more than 1 μm and for example a maximum of 10 μm. The nanorods or micro-rods can each have the shape of a square or hexagonal obelisk or a pyramid or a cone or a cylinder

exhibit. Longitudinal axes of the conversion elements all run parallel to one another, for example within the scope of the manufacturing tolerance. The longitudinal axes of the conversion elements preferably run perpendicular to the main extension plane within the scope of the manufacturing tolerance

Semiconductor layer sequence.

According to at least one embodiment, the

Conversion elements in the semiconductor layer sequence

embedded or buried. In particular, they are

Conversion elements epitaxially with the

Overgrown semiconductor layer sequence. The conversion elements are, for example, in all lateral directions parallel to the main plane of extent of the semiconductor layer sequence or in all spatial directions completely different from the

Surrounding semiconductor layer sequence.

For example, the semiconductor layer sequence has grown on a growth substrate. The growth substrate is part of the semiconductor chip. For example, they are then

Conversion elements between the active layer of the

Semiconductor chips and the growth substrate

Arranged semiconductor layer sequence. Then the semiconductor chip is a so-called one, for example

Sapphire chip or a flip chip.

Alternatively, the semiconductor chip is devoid of one

Growth substrate of the semiconductor layer sequence. After this

Growing the semiconductor layer sequence on a

The growth substrate has therefore been detached from the growth substrate. In this case, the semiconductor chip is in particular a thin-film chip. The semiconductor chip can then comprise, for example, a carrier on which the

Semiconductor layer sequence is arranged. The carrier

differs from the growth substrate. The carrier stabilizes the semiconductor layer sequence in particular. The carrier can be electrically conductive. The carrier can be a silicon carrier or plastic carrier or

Act ceramic carriers. The carrier can also have a number

Include metals or a mixture of metal and

Made of plastic.

According to at least one embodiment, the

optoelectronic semiconductor chip mounted in a recess of the housing. Laterally, that is, in the lateral direction, the semiconductor chip is made up of reflective inner surfaces

Enclosed housing, preferably completely surrounded. Of the Semiconductor chip is, for example, mounted and electrically connected on a mounting surface of the housing which forms a bottom surface of the recess. The inner surfaces preferably run transversely or perpendicular to the mounting surface.

For example, the recess has the shape of a

Solid of revolution, like a truncated cone. In this case, inner surfaces of the recess are within the scope of the

Manufacturing tolerance is flat and defines the lateral surface of the truncated cone. Alternatively, the

Inner surfaces be concave. The recess then has the shape of a paraboloid of revolution, for example. The

curved inner surfaces can be spherically or aspherically curved.

The semiconductor chip is preferably completely in the

Arranged recess. The recess is deeper than the height or thickness of the semiconductor chip, for example. The housing then preferably protrudes beyond the semiconductor chip in directions perpendicular to the main extension plane of the semiconductor chip.

The reflective inner surfaces of the recess face the semiconductor chip. For example, the

Inner surfaces spaced apart from the semiconductor chip in the lateral direction. Electromagnetic radiation emitted by the

Semiconductor chip is emitted, is thrown back from the inner surfaces of the recess. For example, the

Reflectance of the inner surfaces for the from that

Semiconductor chip emitted radiation at least 60% or at least 70% or at least 80% or at least 90%.

The inner surfaces can be provided with a coating, for example. For example, the coating includes a Metal, such as aluminum, silver, chromium or nickel or a metallic alloy with at least one of these materials.

The reflective inner surfaces are set up to reflect and deflect radiation which is emitted in the lateral direction by the semiconductor chip, in particular by side surfaces of the semiconductor chip. The

Inner surfaces are in particular designed so that a large part of the reflected radiation passes through the recess of the

Housing leaves without hitting the housing again.

In at least one embodiment, this includes

optoelectronic component an optoelectronic

Semiconductor chip and a reflective housing. Of the

optoelectronic semiconductor chip comprises a

Semiconductor layer sequence with an active layer that generates primary radiation during normal operation, and several conversion elements. The conversion elements are set up to convert the primary radiation into a

To convert secondary radiation. The conversion elements are each designed as a nanorod or microrod. The

Conversion elements are embedded in the semiconductor layer sequence. The semiconductor chip is mounted in a recess of the housing and is laterally reflective

Surrounding inner surfaces of the housing.

The present invention is in particular based on the idea of a semiconductor chip in which conversion elements are in the semiconductor layer sequence of the semiconductor chip

are embedded, to be mounted in a housing. Thanks to the housing, the radiation emitted by the semiconductor chip can be radiated in a directional manner. By adjusting the density and arrangement of the

Conversion elements, the intensity and / or the color location of the optoelectronic component can be set precisely. The arrangement of the conversion elements can, for example, cause unwanted reabsorption of already

converted primary radiation are reduced, while at the same time a good mixing of the primary and

Secondary radiation is achieved. Embedding the conversion elements is also advantageous for the thermal properties.

In accordance with at least one embodiment of the optoelectronic component, the conversion elements comprise first

Conversion elements and second conversion elements. The first conversion elements are set up to convert the primary radiation into a first secondary radiation

convert. The second conversion elements are set up to convert the primary radiation into a second

To convert secondary radiation. The first and second

Secondary radiation are different from each other.

For example, the first and second assign

Conversion elements on different materials. The first conversion elements are part of the

Manufacturing tolerance preferably all constructed in the same way. The second conversion elements can also be used in the context of

Manufacturing tolerance all have the same structure. In particular, the first and second secondary radiation and the primary radiation are different from one another in pairs.

For example, the distance between the wavelengths at which the first secondary radiation and the second

Secondary radiation have their maximum intensity,

at least 50 nm or at least 100 nm or at least 150 nm. Alternatively or additionally, the distance can be at least 200 nm. In the case of primary radiation it can be

for example light of the blue spectral range, in the case of the first secondary radiation light of the green

Spectral range and for the second secondary radiation around light of the red spectral range.

In accordance with at least one embodiment, the have crystalline connections to the semiconductor layer sequence

Conversion elements have a scattering cross section of at most 10 micrometers, for example of at most 2 gm ^x 5 gm.

In particular, the conversion elements have such a scattering cross-section for radiation that is partially or completely in a lateral direction, i.e. parallel to the

Main plane of extent of the semiconductor layer sequence,

spreads.

According to at least one embodiment, the

optoelectronic semiconductor chip on an emission side. For example, the emission side extends in

Essentially parallel to the main extension plane of the

Semiconductor chips. During operation, for example, at least 25% or at least 50% or at least 75% of the radiation generated by the semiconductor chip is emitted via the emission side. The emission side is preferably facing away from the housing, in particular the mounting surface of the housing.

According to at least one embodiment, the

Emission side a first section and a second

Section. The first section and the second section are therefore partial areas of the emission side. The first section and the second section are each designed to be simply connected and do not overlap with one another. According to at least one embodiment, the first

Section only assigned first conversion elements and the second section are only second conversion elements

assigned. In the present case, "assigned" means in particular that, viewed from above on the emission side, the first section only overlaps with first conversion elements and the second section only overlaps with second conversion elements. For example, the first section and the second section are each at least ten or at least 100

corresponding conversion elements assigned. For example, a single first section are all first

Conversion elements and a single second section assigned to all second conversion elements.

By assigning the different conversion elements to different sections of the emission side, the first conversion elements are spatially, in particular laterally, arranged separately from the second conversion elements. Advantageously, by the spatially separated

Arrangement of the first and second conversion elements an absorption of the first secondary radiation by the second

Conversion elements or vice versa can be reduced or avoided. At the same time, good mixing of the

Primary radiation, the first secondary radiation and / or the second secondary radiation can be achieved.

According to at least one embodiment, the

Emission side several first sections and / or several second sections. The first sections and the second sections are each designed to be simply connected and do not overlap with one another. In particular, the first sections do not overlap with one another second sections do not overlap one another and the first and second sections do not overlap one another. The sections are therefore disjoint in pairs.

According to at least one embodiment, the first

Only first conversion elements are assigned to sections and only second to the second sections

Assigned to conversion elements. In particular, there are at least ten or at least 100 first conversion elements in every first section and at least ten or at least 100 second conversion elements in every second section

assigned. The first and second sections can be in

Be arranged alternately viewed from above on the emission side. For example, the first and second sections form a striped pattern or a checkerboard pattern. The first and second sections can each be designed to be rectangular when viewed from above. Alternatively, the first and second sections can each have a hexagonal shape when viewed in plan. In this case, the first and second sections can form a hexagonal pattern. By arranging the first and second sections in patterns, particularly good mixing of the primary radiation and the first and second secondary radiation can advantageously be achieved.

According to at least one embodiment, the

Issue side a conversion area, whereby the

Conversion area to which conversion elements are assigned. The conversion area forms part of the

Issue side. For example, a lateral

Extension of the conversion area at least 50% or at least 75% of a lateral extension of the

Issue side. For example, radiation emitted by the The optoelectronic semiconductor chip emitted will be focused on the conversion area via the reflective inner surfaces.

According to at least one embodiment, in addition to the optoelectronic semiconductor chip, another such optoelectronic semiconductor chip is mounted in the recess of the housing. The other optoelectronic

Semiconductor chip can have all the features that were disclosed for the optoelectronic semiconductor chip described above.

According to at least one embodiment, the

optoelectronic semiconductor chip exclusively first

Conversion elements and the further optoelectronic

Semiconductor chip only second conversion elements. The first and second conversion elements can have the features described above for the first and second

Conversion elements of a single optoelectronic

Have semiconductor chips. By using two semiconductor chips, a particularly good spatial separation of first and second conversion elements can be achieved. Thus, undesired absorption of the first secondary radiation by second conversion elements and / or absorption of second

Secondary radiation can be further avoided by first conversion elements.

According to at least one embodiment, this includes

optoelectronic component a multitude of pixels, in German emission fields, which are individually and independently

are controllable from each other. One emits

Controlled pixel electromagnetic radiation. In this case it is the optoelectronic component for example a pixelated radiation source. To the

For example, the component comprises at least four or at least ten or at least 100 pixels.

According to at least one embodiment, this includes

optoelectronic component a variety of

optoelectronic semiconductor chips that are mounted in the recess of the housing. Each individual optoelectronic semiconductor chip can have the features that were previously disclosed for the optoelectronic semiconductor chip. Each pixel is preferably an optoelectronic one

Semiconductor chip assigned, in particular one-to-one

assigned. For example, the pixels are arranged in the lateral plane at a distance of at most 0.5 μm from one another.

In accordance with at least one embodiment, a plurality of the optoelectronic semiconductor chips do not include any

Conversion element. For example, the

Optoelectronic semiconductor chips arranged without a conversion element adjacent to the optoelectronic semiconductor chips with a conversion element. In particular, radiation that is emitted by the optoelectronic semiconductor chips can only leave the housing in a region of the optoelectronic semiconductor chips that have a conversion element

include. For example, the housing includes one or more windows for this purpose, so that in a plan view of the housing only semiconductor chips are located in the area of a window that

Include conversion elements. In this way, particularly high radiation densities can advantageously be achieved with good cooling of the optoelectronic semiconductor chips at the same time. In accordance with at least one embodiment of the optoelectronic component, the optoelectronic semiconductor chip is a pixelated semiconductor chip in which each pixel has one

Partial area of an emission side of the optoelectronic

Semiconductor chips assigned, in particular one-to-one

assigned.

In accordance with at least one embodiment of the optoelectronic component, the pixels can each be operated individually and independently of one another. For example, the pixels can be via suitable control electronics, in particular a

Microchip to be controllable. The color locus of a pixilated optoelectronic component can thus advantageously be specified particularly precisely.

According to at least one embodiment, the fills

optoelectronic semiconductor chip, the recess of the housing only partially.

According to at least one embodiment, the mounting surface of the housing has a lateral extension of, for example, 102% or 105% of the lateral extension of the

Semiconductor layer sequence on.

According to at least one embodiment, the

reflective inner surfaces have an angle of incidence of a maximum of 5 °, the lateral extent of the mounting side corresponding to the lateral extent of the semiconductor layer sequence within the manufacturing tolerance. The angle of incidence is the angle that the reflective inner surfaces assume with a direction transverse to the mounting side of the housing. In accordance with at least one embodiment, the recess is filled with a potting compound that reshapes the semiconductor chip. For example, the potting comprises silicone, in particular clear silicone, or is formed from it. The encapsulation can comprise a matrix material, for example silicone, in which

Converter particles or scattering particles are embedded. The converter particles are set up, for example, to convert radiation that is emitted by the semiconductor chip into

To convert radiation of a longer wavelength.

In accordance with at least one embodiment, the radiation emitted by the optoelectronic component has a deviation in the far field of at most 0.5 MacAdams ellipses, the deviation being given by the difference between the color impression in the center of an observation area and the color impression at the edge of an observation area. Of the

The observation area lies, for example, in a plane parallel to the main plane of extent of the

Semiconductor layer sequence and has, for example, a lateral extent that is a thousand times greater than the lateral extent of the semiconductor layer sequence.

In accordance with at least one embodiment of the optoelectronic component, the conversion elements have a height of at most 4 μm, measured along a direction transverse or perpendicular to the main extension plane of the

Semiconductor layer sequence. In particular, the optoelectronic semiconductor chip is a thin-film chip. Such an optoelectronic component can be used, for example, in a high-current system, such as, for example, in a headlight, in particular in a so-called m-AFS system. In accordance with at least one embodiment, the optoelectronic component comprises at least one optical element, wherein the optical element is part of the housing

Beam direction is subordinate. The direction of radiation is the direction in which radiation emitted in the

optoelectronic semiconductor chip is produced from the

Housing is emitted. For example, a surface of the optical element which faces the housing has a lateral extent which corresponds to the lateral extent of the semiconductor layer sequence.

According to at least one embodiment, the distance between the conversion elements and the mounting surface of the housing is at most 5 gm or at most 2 gm. The distance is preferably at most 1 μm. The distance is measured in a direction transverse or perpendicular to the mounting surface. For example, a layer of the semiconductor layer sequence forms the

Conversion elements includes one side of the

Semiconductor layer sequence facing the mounting surface. In particular, the housing forms in the area of

Mounting surface a heat sink. Advantageously, conversion elements can be cooled particularly well through such a distance. This results in a particular advantage that the radiation power of the optoelectronic

Component, especially in high current applications, can be increased.

In the present case, in the production of the optoelectronic component, in particular a dynamic color location adjustment can take place in the production process. The

Conversion elements during an oline measurement in

Wafer process generated. For this purpose, a photoluminescence map of the semiconductor chips is evaluated and the corresponding converter Geometries are calculated. The correction data obtained in this way are then used for the production of the optoelectronic

Component used.

Further advantages and advantageous configurations and

Further developments of the optoelectronic component result from the following exemplary embodiments illustrated in connection with the figures. Identical, identical or identically acting elements are provided with the same reference symbols in the figures. The characters and the

The proportions of the elements shown in the figures are not to be regarded as being to scale.

Rather, individual elements can be used for the better

Can be represented and / or shown in exaggerated size for better understanding.

Show it:

FIGS. 1A to IC and 4 to 7 exemplary embodiments of the optoelectronic component in different views,

FIGS. 2A and 2B show exemplary embodiments of the optoelectronic semiconductor chip in different views, and FIG

Figures 3A and 3B embodiments of the

Conversion elements in detail views.

FIGS. 8A to 8C show exemplary embodiments of the optoelectronic component in detail views.

A first exemplary embodiment of the optoelectronic component 300 is shown in a cross-sectional view in FIG. 1A. The optoelectronic component 300 comprises an optoelectronic semiconductor chip 100. The semiconductor chip 100 comprises a growth substrate 3,

for example a sapphire substrate. A semiconductor layer sequence 1 with an active layer 10 has grown on the growth substrate 3. The semiconductor layer sequence 1 is based, for example, on a nitride compound semiconductor material. The active layer 10 generates primary radiation during operation, for example in the blue spectral range. Conversion elements 21, 22 in the form of nanorods or microrods are shown in FIG

Semiconductor layer sequence 1 embedded. The

Conversion elements 21, 22 convert the

Primary radiation into secondary radiation. The

Conversion elements 21, 22 are based, for example, on a nitride compound semiconductor material. The radiation generated by the semiconductor chip 100 during operation, for example a mixture of primary radiation and secondary radiation, is largely emitted from the semiconductor chip via an emission side 101

decoupled.

Also includes that shown in FIG. 1A

optoelectronic component 300 a housing 200. The

Semiconductor chip 100 is mounted in a recess of housing 200 on a mounting surface of housing 200. The

Housing 200 has a lead frame 201 and a

Housing body 202. In the present case, the lead frame 201 has two poles. The housing body 202 is designed to be electrically insulating, reshapes the lead frame 201 and separates the poles of the lead frame 201 from one another. Of the

Semiconductor chip 100 is connected to lead frame 201 in an electrically conductive manner. The lead frame 201 comprises

for example copper or consists of copper. Of the

Housing body 202 is made of plastic, for example. The

Emission side 101 faces away from the mounting surface. The housing 200 further comprises reflective

Inner surfaces 205 which laterally delimit the recess and which laterally surround the semiconductor chip 100. The

Reflective inner surfaces 205 are designed to reflect radiation that emerges in particular through the side surfaces of the semiconductor chip 100. The radiation is reflected out of the recess in a direction away from the mounting surface.

In contrast to FIG. 1A, it is possible that a

Interface between the active layer 10 and a

Semiconductor layer of the semiconductor layer sequence 1, in which the conversion elements 21, 22 are embedded, is structured. The interface has a large number of elevations and depressions, for example. The elevations lie, for example, in a vertical direction, perpendicular to the main plane of extent of the semiconductor conductor layer sequence 1, on a line with the longitudinal axes of the conversion elements 21, 22.

It is also possible for the emission side 101 to have structures. For example, the emission side 101 has the same structures as the interface of the active one

Layer 10. Alternatively or additionally, the

Emission side 101 and / or the active layer 10 a

Have a plurality of recesses. The recesses are, for example, so-called "V-pit structures". The V-pit structures can extend up to

The main plane of extent of the active layer 10 extend or can penetrate the main plane of extent of the active layer 10. In the figure 1B is an embodiment of the

Optoelectronic component 300 shown, in which two optoelectronic components in a recess of a housing 200

Semiconductor chips 100 are mounted.

A further exemplary embodiment of the optoelectronic component 300 is shown in perspective in FIG

View shown. In the present exemplary embodiment, as in FIG. 1B, two optoelectronic semiconductor chips 100 are mounted in a recess of a housing 200. The

reflective inner surfaces 205 of the housing 200 completely surround the semiconductor chips 100 in the lateral direction. The semiconductor chips 100 have different

Conversion elements 21, 22. The optoelectronic semiconductor chip 100 shown on the right in the figure comprises only first conversion elements 21. The other optoelectronic semiconductor chip 100 comprises only second conversion elements 22. The first conversion elements 21 differ from the second conversion elements 22 with regard to the

Conversion properties. The first conversion elements 21 convert the primary radiation into a first one

Secondary radiation and the second conversion elements 22 convert the primary radiation into a second

Secondary radiation. The first secondary radiation and the second secondary radiation are different from one another.

For example, it is the first

Secondary radiation around light in the green spectral range and with the second secondary radiation around light in the red

Spectral range.

FIGS. 2A and 2B show an exemplary embodiment of the optoelectronic semiconductor chip 100 in a side view and a perspective view. The semiconductor chip 100 acts it is, for example, a semiconductor chip 100 as shown in FIGS. 1A to IC.

In the figure 3A is a detailed view of a first

Conversion element 21 shown. The first conversion element 21 comprises a first semiconductor section 211 in the form of a core. The first semiconductor section 211 is coated with an active region 210. The active area 210 serves to absorb and / or emit electromagnetic radiation. The active area 210 is of a second one

Semiconductor section 212 encased in the form of a layer.

In addition, the present figure shows the remains of a mask 25 which was used to grow the first conversion element 21.

Various exemplary embodiments for the conversion elements are shown in FIG. 3B. The conversion elements can be core-shell rods, for example

cylindrical, pyramidal or obelisk-shaped

are trained. The active areas 210 of the

Conversion elements are each between a first

Semiconductor layer 211 and a second semiconductor layer 212 arranged. The active areas 210 of the conversion elements can each be designed in the form of a multi-quantum well.

A further exemplary embodiment of the optoelectronic component 300 is shown in plan view in FIG.

Two optoelectronic semiconductor chips 100 are attached in a recess of the housing 200 that is round in plan view. Both semiconductor chips 100 each include first

Conversion elements 21 and second conversion elements 22, which convert the primary radiation generated in the semiconductor chips 100 into convert different secondary radiation. The

Emission sides 101 of the semiconductor chips 100 include first sections 21a and second sections 22a. The first

Sections 21a and the second sections 22a are partial areas of the emission side 101. The emission side 101 of the semiconductor chip 100 shown at the top in the figure comprises exactly one first section 21a and exactly one second section 22a. The first section 21a and the second section 22a are each simply connected

formed and do not overlap each other. All first conversion elements 21 are in the first section 21a

assigned and all second conversion elements 22 are assigned to the second section 22a.

The lower semiconductor chip 100 in the present figure comprises two first sections 21a and two second sections 22a. Only first conversion elements 21 are assigned to the first sections 21a and only second conversion elements are assigned to the second sections 22a. The

Sections 21a, 22a have a rectangular contour and are arranged in a striped pattern. Furthermore, the individual sections 21a, 22a are each designed to be simply connected and do not overlap with one another.

A further exemplary embodiment of the optoelectronic component 300 is shown in plan view in FIG. As shown in FIG. 4, two semiconductor chips 100 are in the present case mounted in the recess of the housing 200. By both

Semiconductor chips 100 is the emission side 101 in a first section 21a and a second section 22a

divided. In the case of both semiconductor chips 100, all first conversion elements 21 are the respective first section 21a and all second conversion elements 22 are the respective assigned to the second section 22a. In the present

Another example is the first section 21a of a semiconductor chip 100 compared to the first section 21a

Semiconductor chips 100 arranged. The second sections 22a of the semiconductor chips 100 face away from one another. This creates a spatial separation of the first and second

Conversion elements 21, 22 achieved in the entire optoelectronic component 300. Advantageously, so

Reabsorption of already converted primary radiation can be further reduced.

FIG. 6 shows a further exemplary embodiment of the optoelectronic component 300 in a cross-sectional view. FIG. 6 essentially shows the same features as FIG. 1A with the difference that the semiconductor chip 100 is encapsulated by a potting 230. For example, the encapsulation 230 comprises a matrix material such as silicone in the

Converter particles are embedded. The converter particles are set up to convert radiation that is emitted by the semiconductor chip 100 into radiation of longer wavelength.

The exemplary embodiment in FIG. 7 shows a further optoelectronic component 300 in which the recess in the housing body 200 is additionally filled with an encapsulation 230. The potting 230 can be

for example silicone, for example clear silicone. A converter layer 231 is on the potting 230

upset. The converter layer 231 can for example comprise a matrix material in which converter particles

are embedded. Alternatively, the converter layer 231 is formed, for example, by a converter plate. In the figure 8A is an embodiment of the

optoelectronic component 300 in detail

shown schematically. The optoelectronic component 300 comprises an optoelectronic semiconductor chip 100, which has a semiconductor layer sequence 1 with a first

Semiconductor layer 11, a second semiconductor layer 12 and an active layer 10 comprises. In the present case, the first semiconductor layer 11 is, for example, an n-conductive layer and the second semiconductor layer 12 is, for example, a p-conductive layer. The semiconductor layer sequence 1 further comprises first 21 and second conversion elements 22.

Furthermore, the optoelectronic component 300 comprises a housing 200. In the present case, reflective inner surfaces 205 of the housing 200 are not shown. The housing comprises a housing body 202, which is formed, for example, from silicon or a ceramic. Outer surfaces of the housing body 202 can be designed to be reflective, at least in places.

Furthermore, the optoelectronic semiconductor chip 100 comprises a first electrode 410, which is electrically conductively connected to a first contact element 41. In the present case, the first contact element 41 is part of the housing 200 and is arranged on the side of the housing body 202 which is opposite the optoelectronic semiconductor chip 100. The first semiconductor section 11 can be supplied with current by means of the first electrode 410 via vias 411. A mirror layer 7 functions as a second electrode 420 which is electrically conductively connected to a second contact element 42 and via which the second semiconductor layer 12 can be energized. The second contact element 42 is electrically connected to the second contact element 421 of the housing 200 by means of a contact wire 43 conductively connected. In the present exemplary embodiment, the second contact element 421 is formed on the side of the housing body 202 facing the optoelectronic semiconductor chip 100. Furthermore, an electrically insulating insulation layer 8 separates the first electrode 410 from the second electrode 420.

The optoelectronic semiconductor chip 100 of the present exemplary embodiment is, for example, a thin-film chip that is free of a growth substrate. In particular, the optoelectronic component 300 of the exemplary embodiment can be in a headlight, such as a

Vehicle headlights, find application.

The exemplary embodiment in FIG. 8B essentially shows the same features as FIG. 8A with the difference that the second contact element 421 of the housing 200 is arranged on the side of the housing that faces away from the optoelectronic semiconductor chip 100.

A further exemplary embodiment of an optoelectronic component 300 is shown in FIG. 8C. In contrast to the exemplary embodiment in FIG. 8B, the second electrode 42 is on a side facing the housing 200

Semiconductor layer sequence 1 arranged. Furthermore, the optoelectronic semiconductor chip 100 comprises a sapphire substrate 232. In particular, the optoelectronic semiconductor chip 100 is a sapphire flip chip. Furthermore, the housing of the optoelectronic component 300 comprises a potting 230, which in the present case is set up for the purpose of radiation, which the optoelectronic semiconductor chip 100 through a side transversely to the main plane of extent of the

Leaves semiconductor layer sequence to reflect. Of the For this purpose, encapsulation includes, for example, a matrix material such as silicone in the reflective particles, for example

Titanium dioxide particles, are embedded. Like in

The embodiment of Figure 8B are the first

Contact element 41 and the second contact element 421 attached to one side of the housing body 202, the

is facing away from optoelectronic semiconductor chip 100. The component can therefore be surface-mounted. A

Optoelectronic component 300 according to the present exemplary embodiment is found, for example, in one

Headlights, especially in a headlight for

Vehicles, application.

The description based on the exemplary embodiments is not restricted to the invention. Rather, the invention encompasses every new feature and every combination of features, which in particular includes the combination of features in the patent claims, even if this feature or this combination itself is not explicitly included in the

Claims or exemplary embodiments is specified.

This patent application claims the priority of German patent application 102019103492.2, the disclosure content of which is hereby incorporated by reference.

List of reference symbols

I semiconductor layer sequence

3 growth substrate

7 mirrors

8 insulation layer

10 active layer

II first semiconductor layer

12 second semiconductor layer

21 first conversion element

21a first section

22 second conversion element

22a second section

25 mask

41 first contact element

42 second contact element

43 contact wire

100 optoelectronic semiconductor chip

101 Issues page

200 cases

201 lead frames

202 housing body

205 reflective inner surface

210 active area

211 first semiconductor section

212 second semiconductor section

230 encapsulation

231 converter layer

232 sapphire substrate

300 optoelectronic component 400 first electrode

411 via

420 second electrode 421 second contact element of the housing

Claims

1. An optoelectronic component (300) comprising:

- an optoelectronic semiconductor chip (100),

- A housing (200), wherein

- The semiconductor chip (100), a semiconductor layer sequence (1) with an active layer (10) which generates a primary radiation during normal operation, and several

Comprises conversion elements (21, 22),

- The conversion elements (21, 22) are set up to convert the primary radiation into secondary radiation

convert,

- the conversion elements (21, 22) are each monolithically connected to the semiconductor layer sequence (1),

- The conversion elements (21, 22) in the

Semiconductor layer sequence (1) are embedded,

- The semiconductor chip (100) is mounted in a recess of the housing (200) and is laterally reflective

Inner surfaces (205) of the housing (200) is surrounded.

2. Optoelectronic component (300) according to claim 1, wherein

- the conversion elements (21, 22) of the semiconductor chip (100) comprise first conversion elements (21) and second conversion elements (22),

- the first conversion elements (21) are set up to convert the primary radiation into a first secondary radiation,

- the second conversion elements (22) are set up to convert the primary radiation into a second secondary radiation,

- the first and second secondary radiation are different

are from each other.

3. Optoelectronic component (300) according to claim 2, wherein

- the semiconductor chip (100) has an emission side (101)

having,

- the emission side (101) comprises a first section (21a) and a second section (22a),

- the first section (21a) and the second section (22a) are each designed to be simply connected and do not overlap with one another,

- only first conversion elements (21) are assigned to the first section (21a) and only second conversion elements (22) are assigned to the second section (22a).

4. Optoelectronic component (300) according to claim 3, wherein

- the emission side (101) comprises several first sections (21a) and / or several second sections (22a),

- the first sections (21a) and the second sections (22a) are each designed to be simply connected and do not overlap one another,

- The first sections (21a) only first

Conversion elements (21) are assigned and only second conversion elements (22) are assigned to the second sections (22a).

5. Optoelectronic component (300) according to one of the

preceding claims, wherein

- In addition to the optoelectronic semiconductor chip (100), a further such optoelectronic semiconductor chip (100) is mounted in the recess of the housing (200).

6. The optoelectronic component (300) according to claim 5, wherein - the optoelectronic semiconductor chip (100) comprises only first conversion elements (21), - the further optoelectronic semiconductor chip (100)

exclusively comprises second conversion elements (22).

7. Optoelectronic component (300) according to one of the

preceding claims,

wherein the optoelectronic component (300) comprises a plurality of pixels (15) that are individually and independently

are controllable from one another, with a controlled pixel (15) emitting electromagnetic radiation.

8. Optoelectronic component (300) according to claim 7, wherein

- The optoelectronic component (300) comprises a plurality of the optoelectronic semiconductor chips (100) which are mounted in the recess of the housing (200),

- an optoelectronic semiconductor chip (100) is assigned to each pixel (15).

9. Optoelectronic component (300) according to claim 7, wherein

- the optoelectronic semiconductor chip (100) is a pixelated semiconductor chip,

- Each pixel (15) is assigned a partial area of an emission side (101) of the optoelectronic semiconductor chip (100).

10. Optoelectronic component (300) according to one of the preceding claims, wherein

- the optoelectronic semiconductor chip (100) only partially fills the recess of the housing (200),

- The recess is filled with a potting compound (230) which reshapes the semiconductor chip (100).