WO2020154023A1

WO2020154023A1 - Method of forming moisture and oxygen barrier coatings

Info

Publication number: WO2020154023A1
Application number: PCT/US2019/061970
Authority: WO
Inventors: Geetika Bajaj; Darshan THAKARE; Prerna Sonthalia Goradia; Sivapackia Ganapathiappan; David Britz
Original assignee: Applied Materials, Inc.
Priority date: 2019-01-25
Filing date: 2019-11-18
Publication date: 2020-07-30
Also published as: EP3914750A1; EP3914750A4; CN113302334A

Abstract

Embodiments of the present invention generally relate to methods of forming moisture and oxygen barrier films on substrates. A barrier layer is deposited on a substrate in an atomic layer deposition chamber using atomic layer deposition to reduce a water vapor transmission rate and an oxygen transmission rate of the substrate. The barrier layer is deposited at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the substrate. The substrate may be optionally plasma treated prior to depositing the barrier layer to enhance the adhesion of the barrier layer to the substrate. One or more additional layers, such as layers comprising polymers, may be deposited on the barrier layer to further reduce the water vapor transmission rate and/or the oxygen transmission rate.

Description

METHOD OF FORMING MOISTURE AND OXYGEN BARRIER COATINGS

BACKGROUND

Field

[0001] Embodiments of the present disclosure generally relate to methods of forming moisture and oxygen barrier films on substrates.

Description of the Related Art

[0002] Many industries utilize substrates as a fluid or liquid containing vessel. Such fluid or liquid containing vessels are moisture-sensitive products or devices that must be encapsulated to protect them from ambient moisture exposure. A thin conformal layer of material has been proposed as a means of reducing a water vapor transmission rate (WVTR) and an oxygen transmission rate (OTR) through encapsulation layer(s). Currently, there are a number of ways this is being done commercially. Using an atomic layer deposition (ALD) process to cover a moisture- sensitive product or device is being considered to determine if the conformal nature of these coatings can provide a more effective moisture barrier than other coatings.

[0003] ALD is based upon atomic layer epitaxy (ALE) and employs chemisorption techniques to deliver precursor molecules on a substrate surface in sequential cycles. The cycle exposes the substrate surface to a first precursor and then to a second precursor. Optionally, a purge gas may be introduced between introductions of the precursors. The first and second precursors react to form a product compound as a film on the substrate surface. The cycle is repeated to form the layer to a desired thickness.

[0004] However, many moisture-sensitive substrates being coated with ALD films have very low melting points, thereby limiting the processing that the substrates are able to withstand. As such, it can be difficult to effectively coat the moisture-sensitive substrates in a manner that adequately reduces the water vapor transmission rate and/or the oxygen transmission rate.

[0005] Therefore, there is a need for improving the deposition of ALD films on moisture-sensitive substrates. SUMMARY

[0006] Embodiments of the present disclosure generally relate to methods of forming moisture and oxygen barrier films on substrates. A barrier layer is deposited on a substrate in an atomic layer deposition chamber using atomic layer deposition to reduce a water vapor transmission rate and an oxygen transmission rate of the substrate. The barrier layer is deposited at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the substrate. The substrate may be optionally plasma treated prior to depositing the barrier layer to enhance the adhesion of the barrier layer to the substrate. One or more additional layers, such as layers comprising polymers, may be deposited on the barrier layer to further reduce the water vapor transmission rate and/or the oxygen transmission rate.

[0007] In one embodiment, a method of coating a substrate comprises depositing a barrier layer on the substrate. The barrier layer is deposited using atomic layer deposition at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the substrate.

[0008] In another embodiment, a method of coating a substrate comprises depositing a barrier layer on the substrate. The substrate comprises low-density polyethylene (LDPE). The barrier layer is deposited using atomic layer deposition at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the LDPE.

[0009] In yet another embodiment, a method of coating a substrate comprises depositing a barrier layer on a first surface of the substrate. The barrier layer is deposited using atomic layer deposition at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the substrate. The substrate is a fluid or liquid containing vessel. The fluid or liquid is in contact with a second surface of the substrate opposite the first surface.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, may admit to other equally effective embodiments.

[0011] Figure 1 illustrates an exemplary processing system, according to certain aspects of the present disclosure.

[0012] Figure 2A is a sectional side view showing an illustrative ALD processing chamber according to embodiments described herein.

[0013] Figure 2B is a sectional side view of the processing chamber that is rotated 90 degrees from the view shown in Figure 2A.

[0014] Figure 3 is a flow diagram of a method for coating a substrate, according to one embodiment.

[0015] Figures 4A-4C illustrate schematic cross-sectional views of coating a substrate during various stages of the method of Figure 3, according to one embodiment.

[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

[0017] Embodiments of the present invention generally relate to methods of forming moisture and oxygen barrier films on substrates. A barrier layer is deposited on a substrate in an atomic layer deposition chamber using atomic layer deposition to reduce a water vapor transmission rate and an oxygen transmission rate of the substrate. The barrier layer is deposited at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the substrate. The substrate may be optionally plasma treated prior to depositing the barrier layer to enhance the adhesion of the barrier layer to the substrate. One or more additional layers, such as layers comprising polymers, may be deposited on the barrier layer to further reduce the water vapor transmission rate and/or the oxygen transmission rate. [0018] Figure 1 is a cross sectional top view showing an illustrative processing system 100, according to one embodiment of the present disclosure. Exemplary substrates 102 are shown adjacent to and within the processing system 100. The processing system 100 includes a load lock chamber 104, a transfer chamber 106, a transfer (e.g., tool and material handling) robot 108 within the transfer chamber 106, an ALD processing chamber 1 16, one or more additional processing chambers 1 10, 1 12, 1 14, and a mask chamber 1 18. The one or more additional processing chambers 1 10, 1 12, 1 14 may be chemical vapor deposition (CVD) chambers, plasma-enhanced chemical vapor deposition (PECVD) chambers, or ALD chambers. The one or more additional processing chambers 1 10, 1 12, 1 14, the ALD processing chamber 1 16, and each chamber’s associated hardware are preferably formed from one or more process-compatible materials, such as aluminum, anodized aluminum, nickel plated aluminum, carbon steel, stainless steel, quartz, and combinations and alloys thereof, for example. The one or more additional processing chambers 1 10, 1 12, 1 14 and the ALD processing chamber 1 16 may be round, rectangular, or another shape, as required by the shape of the substrate to be coated and other processing requirements.

[0019] The transfer chamber 106 includes slit valve or transfer port openings 121 , 123, 125, 127, 129 in sidewalls adjacent to the load lock chamber 104, the one or more additional processing chambers 1 10, 1 12, 1 14, the ALD processing chamber 1 16, and the mask chamber 1 18. The transfer robot 108 is positioned and configured to be capable of inserting one or more tools (e.g., substrate handling blades) through each of the transfer port openings 121 , 123, 125, 127, 129 and into the adjacent chamber. That is, the transfer robot can insert tools into the load lock chamber 104, one or more additional processing chambers 1 10, 1 12, 1 14, the ALD processing chamber 1 16, and the mask chamber 1 18 via transfer port openings 121 , 123, 125, 127, 129 in the walls of the transfer chamber 106 adjacent to each of the other chambers. The transfer port openings 121 , 123, 125, 127, 129, or slit openings, are selectively opened and closed with transfer port valves 120, 122, 124, 126, 128, or slit valves, to allow access to the interiors of the adjacent chambers when a substrate, mask, tool, or other item is to be inserted or removed from one of the adjacent chambers. [0020] The transfer chamber 106, load lock chamber 104, the one or more additional processing chambers 1 10, 1 12, 1 14, the ALD processing chamber 1 16, and the mask chamber 1 18 include one or more apertures (not shown) that are in fluid communication with a vacuum system (e.g., a vacuum pump). The apertures provide an egress for the gases within the various chambers. In some embodiments, the chambers are each connected to a separate and independent vacuum system. In still other embodiments, some of the chambers share a vacuum system, while the other chambers have separate and independent vacuum systems. The vacuum systems can include vacuum pumps (not shown) and throttle valves (not shown) to regulate flows of gases through the various chambers.

[0021] Masks, mask sheets, and other items placed within the one or more additional processing chambers 1 10, 1 12, 1 14, and the ALD processing chamber 1 16, other than substrates, may be referred to as a“process kit.” Process kit items may be removed from the processing chambers for cleaning or replacement. The transfer chamber 106, mask chamber 1 18, the one or more additional processing chambers 1 10, 1 12, 1 14, and the ALD processing chamber 1 16 are sized and shaped to allow the transfer of masks, mask sheets, and other process kit items between them. That is, the transfer chamber 106, mask chamber 1 18, the one or more additional processing chambers 1 10, 1 12, 1 14, and the ALD processing chamber 1 16 are sized and shaped such that any process kit item can be completely contained within any one of them with all of the transfer port openings 121 , 123, 125, 127, 129 closed by each transfer port opening’s 121 , 123, 125, 127, 129 corresponding valve 120, 122, 124, 126, 128. Thus, process kit items may be removed and replaced without breaking vacuum of the processing system, as the mask chamber 1 18 acts as an airlock, allowing process kit items to be removed from the processing system without breaking vacuum in any of the chambers other than the mask chamber. Furthermore, the slit valve opening 129 between the transfer chamber 106 and the mask chamber 1 18, the slit valve openings 123, 125, 121 between the transfer chamber 106 and the one or more additional processing chambers 1 10, 1 12, 1 14, and the slit valve opening 127 between the transfer chamber 106 and the ALD processing chamber 1 16 are all sized and shaped to allow the transfer of process kit items between the transfer chamber 106 and the mask chamber 1 18, the one or more additional processing chambers 1 10, 1 12, 1 14, and the ALD processing chamber 1 16. [0022] The mask chamber 1 18 has a door 130 and doorway 131 on the side of the mask chamber 1 18 opposite the slit valve opening 129 of the transfer chamber 106. The doorway 131 is sized and shaped to allow the transfer of masks and other process tools into and out of the mask chamber 1 18. The door 130 is capable of forming an air-tight seal over the doorway 131 when closed. The mask chamber 1 18 is sized and shaped to allow any process kit item to be completely contained within the mask chamber 1 18 with both the door 130 closed and the slit valve 128 leading to the transfer chamber 106 closed. That is, the mask chamber 1 18 is sized and shaped such that any process kit item can be moved from the transfer chamber 106 into the mask chamber 1 18 and the slit valve 128 can be closed without the door 130 of the mask chamber 1 18 being opened.

[0023] Figure 2A is a sectional side view showing an illustrative ALD processing chamber 200 according to embodiments described herein. Figure 2B is a sectional side view of the processing chamber 200 that is rotated 90 degrees from the view shown in Figure 2A. The ALD processing chamber 200 shown in Figures 2A and 2B is similar to the ALD processing chamber 1 16 shown in Figure 1.

[0024] The processing chamber 200 includes a chamber body 204, a lid assembly 206, and a susceptor or substrate support assembly 208. The lid assembly 206 is disposed at an upper end of the chamber body 204, and the substrate support assembly 208 is at least partially disposed within the chamber body 204. The substrate support assembly 208 of the processing chamber 200 shown in Figure 2A is in a transfer position while the substrate support assembly 208 of the processing chamber 200 shown in Figure 2B is in a processing position.

[0025] The lid assembly 206 includes a first channel 235A and a second channel 235B (both are shown in Figure 2B). Both of the first channel 235A and the second channel 235B are coupled to a gas source 210, a purge/carrier gas source 234 and a pump 212. The pump 212 is part of a vacuum system 220. Each of the gas source 210, the purge/carrier gas source 234 and the pump 212 are controlled by valves 244. The lid assembly 206 also includes a multi-channel showerhead 218 and a backing plate 242. [0026] The vacuum system 220 includes the pumps 212 as well as a pump 222. The pump 222 is coupled to a valve 224. The vacuum system 220 is controlled by a process controller to maintain a pressure within the ALD processing chamber suitable for the ALD process. The vacuum system 220 may be used to maintain a first pressure in an interior volume 228 of the processing chamber 200. The vacuum system 220 may also be used to maintain a second pressure within a volume 230 defined between the multi-channel showerhead 218 and the backing plate 242. In one embodiment of the present disclosure, the first pressure may be less than the second pressure.

[0027] The lid assembly 206 also includes a hanger assembly 260 (best shown in Figure 2A) that suspends the multi-channel showerhead 218 in the processing chamber 200. The hanger assembly 260 substantially surrounds a dielectric skirt 262. The dielectric skirt 262 is made from a polymer material, such as a fluoropolymer, that electrically insulates portions of the lid assembly 206 from the chamber body 204. Seals 264, such as O-ring seals, are provided at the interface of the backing plate 242 and the chamber body 204. A portion of the dielectric skirt 262 is positioned between the seals 264. A ceramic cover 266 is positioned to extend inward to at least partially cover the multi-channel showerhead 218.

[0028] The chamber body 204 includes a slit valve opening 214 formed in a sidewall thereof to provide access to the interior of the processing chamber 200. As described above with reference to Figure 1 , the slit valve opening 214 is selectively opened and closed to allow access to the interior of the chamber body 204 by a transfer robot (see Figure 1 ). The lid assembly 206 also includes a central channel 236 within the backing plate 242. The central channel 236 is utilized to deliver a cleaning gas and/or a purge/carrier gas from a gas source 241 . In some embodiments, the cleaning gas is flowed through a remote plasma source 245 that energizes the cleaning gas prior to entry into the volume 230. The lid assembly 206 also includes a radio frequency (RF) power source 252 that forms a RF path (shown by arrows in Figure 2B) to energize precursor gases in a processing volume 254 between the substrate 102 and the multi-channel showerhead 218. In other embodiments, the gas source 241 includes oxygen that is flowed directly to the processing volume 254 via the multi-channel showerhead 218. The gas in the gas source 241 may be referred to as a first gas or a continuous gas. The gas source 210 (discussed above) may be referred to as a second gas or a pulsed gas.

[0029] Above the substrate support assembly 208, a mask frame 243 is supported by support members 238. The support members 238 may also serve as alignment and/or positioning devices for the mask frame 243. A substrate 102 is shown supported by lift pins 239 movably disposed in the substrate support assembly 208. The substrate 102 is shown in a transfer position in Figure 2A such that a robot handling blade (not shown) may access a surface of the substrate 102 opposing the substrate support assembly 208. In a processing position shown in Figure 2B, the substrate 102 may be raised by the substrate support assembly 208 to a position adjacent to the mask frame 243. Specifically, the substrate 102 is adapted to be in contact with, or in proximity to, the mask sheet 232 coupled to the mask frame 243.

[0030] Figure 3 illustrates a flow diagram of a method 300 of coating a substrate, according to one embodiment. Figures 4A-4C illustrate schematic cross-sectional views of a coated substrate 400 during different stages of the method 300 of Figure 3. For clarity, method 300 will be described with reference to Figures 4A-4C. Method 300 may be utilized with the system 100 of Figure 1 , as further described below.

[0031] Method 300 may start at operation 302, where the substrate 402 is optionally treated with a plasma 408, as shown in Figure 4A. The substrate 402 may be the substrate 102 of Figure 1. The substrate 402 may comprise a first polymer, such as low-density polyethylene (LDPE), or may be a silicon wafer. In one embodiment, the substrate 402 is a fluid or liquid containing vessel. In such an embodiment, the fluid or liquid contacts a first surface 402A of the substrate 402 while a second surface 402B of the substrate 402 opposite the first surface 402A is plasma treated. The substrate 402 may have a thickness between about 50 pm to about 0.5 mm.

[0032] The system 100 and ALD processing chamber 1 16 of Figure 1 may be used for the plasma 408 treatment. The substrate 402 may be plasma 408 treated using oxygen or nitrogen. The plasma 408 treatment process may be performed at a frequency of about 13.56 MFIz, a flow of about 50 seem, and at a power of about 200 W for a duration of about 10-30 seconds. Plasma treating the substrate 402 may improve the adhesion of additional layers on the substrate 402.

[0033] In operation 304, a barrier layer 404 is deposited on the substrate 402, as shown in Figure 4B. The barrier layer 404 may comprise one or more layers that form a barrier layer. The barrier layer 404 may be a moisture barrier layer and/or an oxygen barrier layer. In one embodiment, the barrier layer 404 is deposited using ALD in an ALD chamber, such as the ALD processing chamber 1 16 of Figure 1 or the ALD processing chamber 200 of Figures 2A-2B. An exemplary barrier layer 404 ALD process is described below with reference to Figure 1 , Figure 3, and Figures 4A-4C. In another embodiment, the barrier layer 404 is deposited by dip coating.

[0034] If the substrate 402 is a fluid or liquid containing vessel, the fluid or liquid contacts a first surface 402A of the substrate 402 while the barrier layer 404 is deposited on a second surface 402B of the substrate 402 opposite the first surface 402A. Alternatively, if the substrate 402 was plasma 408 treated in operation 302, the barrier layer 404 is deposited on the plasma treated surface 402B of the substrate 402. In one embodiment, the barrier layer 404 is deposited at a pressure of about 1 atm. In another embodiment, the barrier layer 404 is deposited in a vacuum environment. The barrier layer 404 is deposited at a temperature between about 25 degrees Celsius (i.e. , room temperature) to about 5 degrees Celsius below a melting point of the substrate 402. In an embodiment where the substrate 402 comprises LDPE, the barrier layer 404 is deposited at a temperature between about 25 degrees Celsius to about 77 degrees Celsius.

[0035] The barrier layer 404 comprises a material selected from the group consisting of alumina, silica, silicon nitride, and a second polymer. The second polymer may be a chlorine comprising polymer or a fluorine comprising polymer. The second polymer of the barrier layer 404 may be different than the first polymer of the substrate 402. When the barrier layer 404 comprises alumina (AI2O3), silica, or silicon nitride, the barrier layer 404 has a thickness between about 10 nm to about 200 nm.

[0036] In an embodiment where the barrier layer 404 comprises a second polymer, the second polymer comprises a material selected from the group consisting of polyvinylidene dichloride (PVDC), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), polypropylene (PP), high density PP, biaxial oriented PP, LDPE, poly(ethylene terephthalate) (PET), biaxial oriented PET, ethylene-vinyl alcohol (EVAL G-L), rigid polyvinyl chloride (PVC), polystyrene (PS), biaxial oriented nylon 6 (PA6), and polycarbonate (PC). The same polymers can be modified slightly with functional groups such as epoxy, ether, or ester type components (0 to 10%) for increased adhesion or to improve the preparation/handling of those polymers. Barrier coating of the polymers can be done by dip coating, spray coating, ink jetting, or solvent based coating processes. The concentration of the polymer and the speed of coating may determine the thickness of the barrier layer 404. In such an embodiment where the barrier layer 404 comprises a second polymer, the barrier layer 404 has a thickness between about 0.1 pm to about 30 pm. If the barrier layer 404 comprises a second polymer, the second polymer of the barrier layer 404 and the first polymer of the substrate 402 may be different polymers. For example, if the substrate 402 comprises LDPE, the barrier layer 404 may comprise one of PVDC, PTFE, PC, or PVC.

[0037] In an embodiment where the barrier layer 404 comprises AI2O3, depositing the barrier layer 404 may comprise alternating pulses of trimethylaluminium (CFh^AI (TMA) as a first precursor and water as a second precursor. Small nuclei of AI2O3 grow on the second surface 402B of the substrate 402, which eventually combine to form a uniform, dense, and conformal AI2O3 film. In another embodiment, ozone may be used as the oxidizing agent (i.e. the second precursor) instead of water.

[0038] In operation 306, one or more layers 406 are optionally deposited on the barrier layer 404, as shown in Figure 4C. While only one layer 406 is shown, a plurality of layers 406 may be deposited. In one embodiment, up to 10 additional layers 406 may be deposited. The one or more layers 406 may be deposited by dip coating. Depositing the one or more layers 406 on the barrier layer may further reduce the water vapor transmission rate and/or the oxygen transmission rate. Each of the one or more layers may comprise one or more third polymers, the one or more third polymers being different than the first polymer of the substrate 402.

[0039] Each of the one or more layers 406 may comprise the same material, or each of the one or more layers 406 may individually comprise a different material. In one embodiment, the one or more layers 406 comprise at least one polymer selected from the group consisting of PVDC, PTFE, PCTFE, PP, PC, LDPE, PET, EVAL G-L, PVC, PS, and PA6. The same polymers may be modified slightly with functional groups such as epoxy, ether, or ester type components (0 to 10%). Coating the substrate 402 with the barrier layer 404 and optionally the one or more layers 406 using the method 300 results in the substrate 402 having a WVTR of about 0.35 g/m²/24 h to about 0.70 g/m²/24 h.

[0040] For simplicity and ease of description, a detailed exemplary coating process of the substrate 402 utilizing operations 302-306 of method 300 and performed within the processing system 100 will now be described. The exemplary coating process is controlled by a process controller, which may be a computer or system of computers that may be located in one of the one or more additional processing chambers 1 10, 1 12, 1 14, such as the processing chamber 1 14.

[0041] Referring to Figure 1 , the exemplary coating processing of the substrate 402 optionally begins with the transfer robot 108 retrieving a mask from the mask chamber 1 18 and placing the mask in the ALD processing chamber 1 16. Placing a mask in the ALD processing chamber 1 16 is optional because a mask may be left in the ALD processing chamber 1 16 from earlier processing, and the same mask may be used in processing multiple substrates 402. In placing masks within the ALD processing chamber 1 16, the slit valve 126 between the chambers may be opened and closed.

[0042] Next, the transfer robot 108 retrieves the substrate 402 from the load lock chamber 104 and places the substrate 402 in the ALD processing chamber 1 16. The process controller controls valves, actuators, and other components of the processing chamber to perform the ALD processing. The process controller causes the slit valve 126 to be closed, isolating the ALD processing chamber 1 16 from the transfer chamber 106. The process controller also causes a substrate support member, or susceptor, to position the substrate 402 for ALD processing. If the mask was not placed into the correct processing position by the transfer robot, then the process controller may activate one or more actuators to position the mask. Alternatively or additionally, the susceptor may position the mask for processing. The mask is used to mask off certain areas of the substrate and prevent deposition from occurring on those areas of the substrate. [0043] The process controller then activates valves to start the flow of precursor and other gases into the ALD processing chamber 1 16. The particular gas or gases that are used depend upon the process or processes to be performed. The gases can include TMA, nitrogen (N2), and oxygen (O2), however, the gases are not so limited and may include one or more precursors, reductants, catalysts, carriers, purge gases, cleaning gases, or any mixture or combination thereof. The gases may be introduced into the ALD processing chamber 1 16 from one side and flow across the substrate 402. Depending on requirements of the processing system, the process controller may control valves such that only one gas is introduced into the ALD processing chamber at any particular instant of time.

[0044] The process controller also controls a power source capable of activating the gases into reactive species and maintaining the plasma 408 of reactive species to cause the reactive species to react with and coat the substrate 402, prior to starting the flow of the precursor and other gases used to form the barrier layer 404, as described in operation 302 of method 300 and as shown in Figure 4A. For example, radio frequency (RF) or microwave (MW) based power discharge techniques may be used. The activation may also be generated by a thermally based technique, a gas breakdown technique, a high intensity light source (e.g., UV energy), or exposure to an x-ray source. In an exemplary process where operation 302 is performed, oxygen is activated into a plasma 408, and the plasma 408 reacts with and deposits a layer of oxygen on the substrate 402.

[0045] The process controller then causes TMA, for example, to flow across the substrate 402, as described in operation 304, to form a barrier layer 404 of aluminum oxide on the substrate 402, as shown in Figure 4B. The TMA may react with the layer of oxygen on the substrate 402 in embodiments where operation 302 is optionally performed. Depositing the barrier layer 404 may comprise alternating pulses of TMA as a first precursor and water as a second precursor. Small nuclei of AI2O3 grow on the surface of the substrate 402, which eventually combine to form a uniform, dense, and conformal AI2O3 film. In another embodiment, ozone or oxygen plasma may be used as the oxidizing agent (i.e. the second precursor) instead of water. The plasma treatment may be used to make a hydrophobic polymer hydrophilic. [0046] Following the deposition of the barrier layer 404, the one or more layers 406 may be deposited, as described in operation 306 of method 300 and as shown in Figure 4C. The ALD chamber 1 16 may be used to deposit the one or more layers 406, or the one or more layers 406 may be deposited in one of the additional processing chambers 1 10, 1 12, 1 14. For example, if the one or more layers 406 are deposited in an additional processing chamber 1 10, 1 12, 1 14, when the ALD process in the ALD processing chamber 1 16 is complete, the process controller causes the ALD processing chamber 1 16 to be evacuated and controls the susceptor to lower the substrate 402 to a transfer position. The process controller also causes the slit valve 126 between the ALD processing chamber 1 16 and the transfer chamber 106 to be opened and directs the transfer robot 108 to retrieve the substrate 402 from the ALD processing chamber 1 16. The process controller then causes the slit valve 126 between ALD processing chamber 1 16 and the transfer chamber 106 to be closed.

[0047] Next, the process controller causes the slit valve 124 between the transfer chamber 106 and one of the one or more additional processing chamber 1 10, 1 12, 1 14 to be opened, such as the additional processing chamber 1 12. The transfer robot 108 places the substrate 402 in the additional processing chamber 1 12, and the process controller causes the slit valve 124 between the transfer chamber 106 and the additional processing chamber 1 12 to be closed. The additional processing chamber 1 12 may then be utilized to deposit the one or more layers 406.

[0048] Utilizing the above described methods, substrates may be coated with a barrier layer that reduces the water vapor transmission rate and the oxygen transmission rate. For example, coating the substrate 402 with the barrier layer 404 and optionally the one or more layers 406 using the method 300 results in the substrate 402 having a WVTR of about 0.35 g/m²/24 h to about 0.70 g/m²/24 h. Additionally, the barrier layer 404 and the one or more layers 406 can be deposited at low temperatures such that each layers 404, 406 is uniform, conformal, and dense.

[0049] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:

1 . A method of coating a substrate, comprising:

depositing a barrier layer on the substrate, wherein the barrier layer is deposited using atomic layer deposition at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the substrate.

2. The method of claim 1 , wherein the barrier layer comprises a material selected from the group consisting of alumina, silica, silicon nitride, and a polymer, and wherein the substrate is a fluid or liquid containing vessel.

3. The method of claim 2, wherein when the barrier layer comprises a polymer, the barrier layer has a thickness between about 0.1 pm to about 30 pm, and wherein when the barrier layer comprises alumina, silica, or silicon nitride, the barrier layer has a thickness between about 10 nm to about 200 nm.

4. The method of claim 1 , further comprising:

plasma treating the substrate prior to depositing the barrier layer.

5. The method of claim 1 , further comprising:

depositing one or more layers on the barrier layer,

wherein the one or more layers are deposited by dip coating,

wherein the substrate comprises a first polymer,

wherein the barrier layer comprises a second polymer, the second polymer being different than the first polymer, and

wherein each of the one or more layers comprises one or more third polymers, the one or more third polymers being different than the first polymer.

6. A method of coating a substrate, comprising:

depositing a barrier layer on the substrate, the substrate comprising low- density polyethylene (LDPE), wherein the barrier layer is deposited using atomic layer deposition at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the LDPE.

7. The method of claim 6, wherein the barrier layer comprises a material selected from the group consisting of alumina, silica, silicon nitride, and a polymer, and wherein the substrate is a fluid or liquid containing vessel.

8. The method of claim 7, wherein when the barrier layer comprises alumina, silica, or silicon nitride, the barrier layer has a thickness between about 10 nm to about 200 nm, and wherein when the barrier layer comprises a polymer, the barrier layer has a thickness between about 0.1 pm to about 30 pm.

9. The method of claim 7, further comprising:

plasma treating the substrate prior to depositing the barrier layer.

10. The method of claim 7, further comprising:

depositing one or more layers on the barrier layer,

wherein the one or more layers are deposited by dip coating,

wherein the one or more layers comprise one or more polymers, and wherein each of the one or more layers comprises a different material than the substrate.

1 1 . A method of coating a substrate, comprising:

depositing a barrier layer on a first surface of the substrate, wherein the barrier layer is deposited using atomic layer deposition at 1 atm and at a temperature between about 25 degrees Celsius to about 5 degrees Celsius below a melting point of the substrate, and wherein the substrate is a fluid or liquid containing vessel, the fluid or liquid being in contact with a second surface of the substrate opposite the first surface.

12. The method of claim 1 1 , wherein the barrier layer comprises a material selected from the group consisting of alumina, silica, silicon nitride, and a polymer, and wherein when the barrier layer comprises alumina, silica, or silicon nitride, the barrier layer has a thickness between about 10 nm to about 200 nm.

13. The method of claim 11 , wherein when the barrier layer comprises a polymer, the barrier layer has a thickness between about 0.1 pm to about 30 pm.

14. The method of claim 11 , further comprising:

plasma treating the substrate prior to depositing the barrier layer.

15. The method of claim 11 , further comprising:

depositing one or more layers on the barrier layer,

wherein the one or more layers are deposited by dip coating,

wherein the substrate comprises a first polymer,