WO2020153648A1 - Dispositif de traitement de signaux de multiplexage basé sur un élément semiconducteur passif - Google Patents
Dispositif de traitement de signaux de multiplexage basé sur un élément semiconducteur passif Download PDFInfo
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- WO2020153648A1 WO2020153648A1 PCT/KR2020/000659 KR2020000659W WO2020153648A1 WO 2020153648 A1 WO2020153648 A1 WO 2020153648A1 KR 2020000659 W KR2020000659 W KR 2020000659W WO 2020153648 A1 WO2020153648 A1 WO 2020153648A1
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- 239000004065 semiconductor Substances 0.000 title abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000002600 positron emission tomography Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 230000004060 metabolic process Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
- A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/52—Devices using data or image processing specially adapted for radiation diagnosis
- A61B6/5205—Devices using data or image processing specially adapted for radiation diagnosis involving processing of raw data to produce diagnostic data
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
- A61B6/03—Computed tomography [CT]
- A61B6/037—Emission tomography
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
- A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
- A61B6/4258—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector for detecting non x-ray radiation, e.g. gamma radiation
Definitions
- the present invention relates to a multiplexing signal processing apparatus based on a semiconductor passive element that can be utilized in a radiographic image processing apparatus or the like.
- Radiographic imaging devices such as positron emission tomography (Positron Emission Tomography: hereinafter referred to as'PET') or gamma cameras use pixel-type optical sensors with many channels per unit area to improve sensitivity. Doing. Due to such an increase in the channel, a signal processing burden is increased in acquiring and processing data.
- PET positron emission tomography
- positron Emission Tomography is a device that diagnoses the presence or absence of metabolism by photographing biological metabolic processes.
- PET is composed of several scintillators, photo detectors and signal processing units arranged in a ring or polygon to detect ⁇ rays.
- the photo detector uses a structure in which a rectangular pillar-shaped scintillator is stacked in one or multiple stages, and the bottom of the scintillator includes a photoelectric device for processing the detected signal and other signal processors.
- multiplexing signal processing has been conventionally performed using a resistive change division multiplexing or a capacitive change division multiplexing.
- DPCs discrete position circuits
- SCD symmetric charge division circuit
- DPC and SCD which are composed of an array of passive elements, have the advantage of low cost due to the small size of the circuit and simple circuit, but the leakage current occurs according to the movement path of the current and the current decreases when passing through the passive element. It has the disadvantage of reduced linearity.
- a SCD-type multiplexing circuit that replaces a resistor or a capacitor with a diode has recently been developed, and a circuit method has been developed to improve the linearity deterioration of the output signal by reducing the amount of current that decreases when passing through the device. The disadvantages still exist.
- FIG. 1 illustrates a multiplexing signal processing circuit that is commonly used.
- the multiplexing processing apparatus (DPC) based on the resistance distribution circuit shown in (a)
- a plurality of resistance elements are connected in a matrix form.
- the DPC based on the resistance distribution circuit has a great advantage in that the channel reduction ratio is high by reducing the number of N x N inputs to 4 outputs.
- such a DPC circuit has the disadvantages that as the number of channels increases, the signal-to-noise ratio decreases and the linearity decreases at the edge of the effective field of view.
- the multiplexing processing device (SCD) based on the capacitor charge distribution circuit shown in (b) includes a plurality of capacitors coupled to each optical sensor. SCD reduces the number of N x N inputs to 2N outputs, so the channel reduction ratio is not high, but it has the advantage of high linearity compared to DPC. However, there is a disadvantage in that the signal-to-noise ratio decreases due to leakage current between channels divided into rows and columns.
- An object of the present invention is to solve the above-described problems of the prior art and to provide a multiplexing signal processing apparatus capable of minimizing leakage current.
- a passive element-based multiplexing signal processing apparatus includes a plurality of N (N is a natural number) rows and a plurality of signal conversion units that process a plurality of input signals, respectively.
- M signal conversion unit blocks arranged according to a matrix arrangement of M columns (where M is a natural number) and connected to N row unit output terminals, respectively, and M signal conversion unit blocks connected to M column unit output terminals, respectively. It is to include.
- the signal converter includes a first diode having an input terminal connected to an input signal node receiving an input signal; A second diode having an input terminal connected to the input signal node; And a ground resistance connected to the input signal node.
- Each of the output terminals of the first diode of each signal conversion unit arranged in the same row is connected to the row unit output terminal, and the output terminals of the second diodes of each signal conversion unit arranged in the same column are respectively connected to the column unit output terminal. It is connected.
- a radiation signal processing apparatus includes a plurality of optical sensors that convert a scintillation signal output from a scintillator unit that converts radiation into a scintillation signal into an electrical signal, and a plurality of signal conversion units that process output signals of the optical sensor, respectively.
- the signal conversion unit is arranged according to a matrix arrangement of N (N is a natural number) rows and M (M is a natural number) columns, and the N signal conversion unit blocks and M are respectively connected to N row unit output terminals.
- a first diode having an M signal conversion unit block connected to each of the column unit output terminals, the signal conversion unit having an input terminal connected to an input signal node receiving the output signal of the optical sensor;
- a second diode having an input terminal connected to the input signal node;
- a ground resistance connected to the input signal node, wherein the output terminals of the first diodes of each signal conversion unit arranged in the same row are respectively connected to the output units of the row units and the second of each signal conversion unit arranged in the same column.
- the output terminals of the diodes are each connected to the column output terminals.
- a plurality of optical signals processed by the apparatus for processing a radiographic image can be efficiently processed through a multiplexing signal processing apparatus having a relatively simple structure.
- the grounding resistor to the diode-based multiplexing circuit, which is a semiconductor passive element, while maintaining the linear output signal characteristic, which is an advantage of using a diode, the leakage current is reduced by the grounding resistance to improve energy resolution, time resolution, and energy. Linearity and signal-to-noise ratios can be expected.
- FIG. 1 illustrates a multiplexing signal processing circuit that is commonly used.
- FIG. 2 is a diagram illustrating a multiplexing signal processing apparatus according to an embodiment of the present invention.
- FIG. 3 is a diagram illustrating a multiplexing signal processing apparatus according to an embodiment of the present invention.
- FIG. 4 is a view showing the configuration of a signal conversion unit according to an embodiment of the present invention.
- FIG. 5 is a view for explaining the performance of a multiplexing signal processing apparatus according to an embodiment of the present invention.
- 6 to 8 are diagrams illustrating a flood histogram and profiling results for explaining the performance of a multiplexing signal processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a diagram illustrating a multiplexing signal processing apparatus according to an embodiment of the present invention.
- the multiplexing signal processing apparatus 100 includes an optical sensor 1000 and a signal converter 1100.
- the amplifier 1200 and the signal processor 1300 may be further included.
- the multiplexing signal processing apparatus 100 is used for a radiographic image processing apparatus such as PET or a gamma camera, and may function as a component by including the apparatus.
- the photo detector 1000 includes a plurality of optical sensors that convert the flash signal output from a scintillator that converts radiation into a flash signal into an electrical signal.
- a photodiode or a semiconductor optical sensor, an optical multiplier, etc. may be used as the optical sensor.
- the signal conversion unit 1100 is coupled to each of the optical sensors of the photo detector 1000, and includes a plurality of signal conversion units 1100 for converting the output signal of each optical sensor. Through this, the radiographic image signal is multiplexed.
- the amplifier 1200 amplifies the pulse signal output from the photo detector through the signal converter and transmits it to the signal processor 1300.
- the amplifier 1200 various types of amplifier circuits generally used may be used.
- the signal processor 1300 interprets location information of the optical sensor from which each pulse signal is output based on the characteristics of each pulse amplified through the amplifier 1200.
- FIG. 3 is a diagram illustrating a multiplexing signal processing apparatus according to an embodiment of the present invention
- FIG. 4 is a diagram showing a configuration of a signal conversion unit according to an embodiment of the present invention.
- an optical detector 1000 including an optical sensor is disposed at the bottom of the scintillator, a plurality of channels including a plurality of optical sensors are disposed, and a signal passing through each channel is an amplifier 1200. , 1210) to the signal processor 1300.
- the plurality of signal converters 1100 are arranged according to a matrix arrangement of N (N is a natural number) rows and M (M is a natural number) columns, so that N row units are output.
- it may be arranged according to an 8*8 matrix arrangement, but this is exemplary and may be arranged in various forms.
- each signal converter 1170 includes a first diode 1172 with an input terminal connected to an input signal node receiving an input signal, and a second diode 1174 with an input terminal connected to an input signal node; And a ground resistor 1176 connected to the input signal node.
- the output terminals of the first diode 1172 of each of the signal conversion unit blocks 1110, 1120, and 1130 arranged in the same row are respectively connected to the row unit output terminals.
- the output terminals of the second diodes 1174 of each of the signal conversion unit blocks 1140, 1150, 1160 arranged in the same column are respectively connected to the column unit output terminals.
- FIG. 5 is a view for explaining the performance of a multiplexing signal processing apparatus according to an embodiment of the present invention.
- the resistor when the resistance is connected to the row and column of the input signal node, respectively, the resistor is connected to the row and column of the input signal node, respectively, and when the ground resistance is additionally connected, the diode is connected to the row and column of the input signal node.
- diodes When connected to each other, diodes are respectively connected to the rows and columns of the input signal node, and the experimental results when the ground resistance is additionally connected are compared and illustrated.
- the crosstalk voltage of the multiplexing circuit according to the present invention is the smallest compared to other configurations.
- the rise time and fall time of each signal are the fastest.
- the energy resolution, energy linearity, and time resolution (coincidence resolving time) of the multiplexing circuit in this invention are very excellent compared to other technologies.
- 6 to 8 are diagrams illustrating a flood histogram and profiling results for explaining the performance of a multiplexing signal processing apparatus according to an embodiment of the present invention.
- FIG. 6 shows a case where a resistor is connected to a row and column of the input signal node, and a ground resistor is additionally connected (Resistor-Resistor)
- FIG. 7 shows a case where a diode is connected to a row and column of the input signal node (Diode-Diode)
- Figure 8 is a diode connected to each of the rows and columns of the input signal node, and when the ground resistance is additionally connected (Diode-Diode-Resistor), 64 channels of histogram were obtained and confirmed by the image. .
- FIGS. 6 to 8 show the flood histogram (a) of 64 channels obtained by using a Na-22 dotted source to compare the results in terms of coordinate mapping and image, and a portion indicated by a square in the flood histogram.
- Each profile (b) obtained by profiling and obtaining a peak-to-valley ratio (PVR) is shown.
- the diode-diode-resistor circuit corresponding to the multiplexing signal processing device is 61%, respectively, compared to the resistor-resistor circuit and diode-diode circuit, It can be seen that a 21% improvement can be obtained.
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Abstract
La présente invention concerne un dispositif de traitement de signaux de multiplexage basé sur un élément semiconducteur passif qui consiste : en N blocs de convertisseur de signaux dans lesquels une pluralité d'unités de conversion de signaux servant à traiter chaque signal d'une pluralité de signaux d'entrée sont agencés selon une disposition matricielle de N (N est un nombre naturel) lignes et M (M est un nombre naturel) colonnes et sont respectivement connectées à N bornes de sortie d'unité de ligne ; et M blocs de convertisseur de signaux sont chacun connecté à M bornes de sortie d'unité de colonne. Les convertisseurs de signaux consistent chacun : en de premières diodes présentant une borne d'entrée connectée à un nœud de signal d'entrée qui reçoit un signal d'entrée ; en de secondes diodes présentant la borne d'entrée connectée au nœud de signal d'entrée ; et en une résistance à la masse connectée au nœud de signal d'entrée. Des bornes de sortie des premières diodes des convertisseurs de signaux agencés dans la même ligne sont respectivement connectées aux bornes de sortie d'unité de ligne et des bornes de sortie des secondes diodes des convertisseurs de signaux agencés dans la même colonne sont respectivement connectées aux bornes de sortie d'unité de colonne.
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US17/424,740 US11621282B2 (en) | 2019-01-21 | 2020-01-14 | Multiplexing signal processing device based on semiconductor passive element |
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KR10-2019-0007605 | 2019-01-21 | ||
KR1020190007605A KR102222349B1 (ko) | 2019-01-21 | 2019-01-21 | 반도체 수동소자 기반의 멀티플렉싱 신호 처리 장치 |
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WO (1) | WO2020153648A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130170616A1 (en) * | 2011-12-31 | 2013-07-04 | Ravi K. Mruthyunjaya | Radiographic detector including block address pixel architecture, imaging apparatus and methods using the same |
US20130293296A1 (en) * | 2012-05-02 | 2013-11-07 | Adaptive I/O Technologies, Inc. | Diode enhanced amplifier circuits and methods thereof |
JP2014168202A (ja) * | 2013-02-28 | 2014-09-11 | Canon Inc | 放射線撮像装置および放射線撮像システム |
KR101815290B1 (ko) * | 2016-11-14 | 2018-01-11 | 서강대학교산학협력단 | 양극성 펄스를 이용한 멀티플렉싱 신호 처리 방법 |
US20180091126A1 (en) * | 2016-09-23 | 2018-03-29 | Joulwatt Technology (Hangzhou) Co., Ltd. | Integrated circuit with multiplexed pin and pin multiplexing method |
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US8575534B2 (en) * | 2009-03-25 | 2013-11-05 | The Board Of Trustees Of The Leland Stanford Junior University | Cross-strip charge multiplexing readout for differential detector arrays with capacitive row and column charge splitters |
US8247780B2 (en) * | 2010-11-10 | 2012-08-21 | Siemens Aktiengesellschaft | High density, proportional-mode, APD arrays for individual scintillator readout in PET applications |
US9954124B1 (en) * | 2016-01-08 | 2018-04-24 | Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville | Thermo-compensated silicon photo-multiplier with on-chip temperature sensor |
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- 2019-01-21 KR KR1020190007605A patent/KR102222349B1/ko active IP Right Grant
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2020
- 2020-01-14 WO PCT/KR2020/000659 patent/WO2020153648A1/fr active Application Filing
- 2020-01-14 US US17/424,740 patent/US11621282B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130170616A1 (en) * | 2011-12-31 | 2013-07-04 | Ravi K. Mruthyunjaya | Radiographic detector including block address pixel architecture, imaging apparatus and methods using the same |
US20130293296A1 (en) * | 2012-05-02 | 2013-11-07 | Adaptive I/O Technologies, Inc. | Diode enhanced amplifier circuits and methods thereof |
JP2014168202A (ja) * | 2013-02-28 | 2014-09-11 | Canon Inc | 放射線撮像装置および放射線撮像システム |
US20180091126A1 (en) * | 2016-09-23 | 2018-03-29 | Joulwatt Technology (Hangzhou) Co., Ltd. | Integrated circuit with multiplexed pin and pin multiplexing method |
KR101815290B1 (ko) * | 2016-11-14 | 2018-01-11 | 서강대학교산학협력단 | 양극성 펄스를 이용한 멀티플렉싱 신호 처리 방법 |
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Publication number | Publication date |
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KR102222349B1 (ko) | 2021-03-03 |
US20220139971A1 (en) | 2022-05-05 |
US11621282B2 (en) | 2023-04-04 |
KR20200090502A (ko) | 2020-07-29 |
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