WO2020149027A1 - Foreign matter removal device, substrate cleaning device, substrate treatment device, and cleaning member - Google Patents

Abstract

Provided is a foreign matter removal device that removes foreign matter adhered to a work, the foreign matter removal device having a nanopillar structure that has a plurality of nano-sized pillars, and an actuator that brings the nanopillar structure and the work into contact or proximity with one another.

Description

Foreign substance removing device, substrate cleaning device, substrate processing device, and cleaning member

The present invention relates to a foreign matter removing device, a substrate cleaning device, a substrate processing device, and a cleaning member.
The present application claims priority based on Japanese Patent Application No. 2019-005255 filed in Japan on January 16, 2019, the contents of which are incorporated herein by reference.

Conventionally, there is known a substrate polishing apparatus that flattens the surface of a substrate such as a silicon wafer by chemical mechanical polishing (CMP: Chemical Mechanical Polishing). Such a substrate polishing apparatus includes a substrate polishing apparatus for polishing a substrate and a substrate cleaning apparatus for cleaning/drying the polished substrate. Since the residue of the slurry used for CMP, metal polishing dust, and the like adhere to the polished substrate as fine particles (foreign matter), the substrate cleaning apparatus removes the fine particles.

In Patent Document 1 below, in order to effectively wash fine particles of submicron level, a main component is polyurethane having fine pores with an average pore size of 10 to 200 μm on the contact surface with the object to be cleaned. There is disclosed a cleaning method in which the cleaning member is brought into contact with an object to be cleaned and scrubbed.

Japanese Patent Laid-Open No. 8-71511

In recent years, semiconductor devices have been highly integrated, and circuit wiring on a substrate has been miniaturized to a nano level. Further, in a patterning device using the nanoimprint technology, it is necessary to remove foreign matters existing on the surface of the substrate in order to avoid transfer of dirt between the die and the substrate and between the substrates. .. Therefore, in recent years, there has been a demand for a technique capable of effectively removing fine particles of nano level, which is smaller than the conventional sub-micron level.
The above-mentioned request is not limited to the substrates handled by the semiconductor manufacturing apparatus, but is widely applicable to workpieces that require a high degree of cleanliness.

The present invention has been made in view of the above circumstances, and provides a foreign matter removing device, a substrate cleaning device, a substrate processing device, and a cleaning member that can effectively remove minute foreign substances attached to a work.

A first aspect of the present invention is a foreign matter removing apparatus for removing foreign matter adhering to a work, comprising: a nanopillar structure having a plurality of nanosized pillars; and an actuator for bringing the nanopillar structure and the work into contact with or in proximity to each other. And.
A second aspect of the present invention is the foreign matter removing apparatus of the first aspect, which may further include an elastic support that elastically supports the nanopillar structure.

A third aspect of the present invention is a substrate cleaning apparatus for cleaning a substrate, comprising the foreign matter removing apparatus according to the first aspect or the second aspect as a foreign matter removing apparatus for removing foreign matter adhering to the substrate.
According to a fourth aspect of the present invention, in the substrate cleaning apparatus of the third aspect, a dry cleaning unit for dry cleaning the substrate may be provided, and the dry cleaning unit may have the foreign matter removing device.
A fifth aspect of the present invention is the substrate cleaning apparatus according to the third aspect or the fourth aspect, including a plurality of cleaning units for sequentially cleaning the substrate, wherein at least one of the plurality of cleaning units removes the foreign matter. It may have a device.
A sixth aspect of the present invention is the substrate cleaning apparatus according to any one of the third to fifth aspects, wherein the foreign matter removing apparatus has a contact member that comes into contact with the substrate, and the substrate is the contact member. The contact surface may have the nanopillar structure.
In a seventh aspect of the present invention, in the substrate cleaning apparatus of the sixth aspect, the contact member may rotate relatively while being in contact with the substrate.

An eighth aspect of the present invention is a substrate processing apparatus, comprising: a substrate polishing apparatus for polishing a substrate; and a substrate cleaning apparatus for cleaning the substrate, wherein the substrate cleaning apparatus has the above third to seventh aspects. The substrate cleaning apparatus according to any one of the above.

A ninth aspect of the present invention is a substrate processing apparatus, comprising a plating apparatus for plating a substrate and a substrate cleaning apparatus for cleaning the substrate, wherein the substrate cleaning apparatus is the above third to seventh aspects. The substrate cleaning apparatus according to any one aspect is provided.

A tenth aspect of the present invention is a cleaning member for cleaning a work, comprising a protrusion that comes into contact with the work when cleaning the work, and a nano-sized pillar provided on a tip surface of the protrusion. It has a plurality of nano pillar structures, and a skin layer which covers at least one copy of the peripheral surface of the above-mentioned projection other than the above-mentioned tip surface.

According to the above aspect of the present invention, minute foreign matter attached to the work can be effectively removed.

It is a top view showing the whole substrate processing device composition concerning one embodiment. It is a perspective view which shows the structure of the washing|cleaning part which concerns on one Embodiment. It is a cross-sectional block diagram which shows the roll cleaning member which concerns on one Embodiment. It is an enlarged view which shows the area|region A shown in FIG. FIG. 4 is a process chart showing an example of a method for manufacturing a nanopillar structure according to one embodiment. It is a block diagram which shows the neutral particle beam etching apparatus used in the manufacturing process of the nano pillar structure which concerns on one Embodiment. It is explanatory drawing which shows a mode that the foreign material adhering to the board|substrate which concerns on one Embodiment is removed by a nanopillar structure. It is a figure which shows the washing|cleaning flow of the board|substrate which concerns on one Embodiment. It is a perspective view which shows the structure of the foreign material removal apparatus which concerns on the modification of one Embodiment. It is sectional drawing of the pencil cleaning member with which the foreign material removal apparatus shown in FIG. 9 is equipped. It is a perspective view which shows the structure of the foreign material removal apparatus which concerns on the modification of one Embodiment. It is a top view which shows the structure of the foreign material removal apparatus which concerns on the modification of one Embodiment. It is a side view which shows the structure of the substrate processing apparatus which concerns on the modification of one Embodiment. It is sectional drawing which shows the tape cartridge with which the scrubber shown in FIG. 13 was equipped.

An embodiment of the present invention will be described below with reference to the drawings. The following embodiments are described by way of examples in order to better understand the gist of the invention, and do not limit the invention unless otherwise specified.

FIG. 1 is a plan view showing the overall configuration of a substrate processing apparatus 1 according to an embodiment.
The substrate processing apparatus 1 shown in FIG. 1 is a chemical mechanical polishing (CMP) apparatus for flatly polishing the surface of a substrate (work) W such as a silicon wafer. The substrate processing apparatus 1 includes a rectangular box-shaped housing 2. The housing 2 is formed in a substantially rectangular shape in a plan view.

The substrates W to be processed are semiconductor wafers, glass substrates (for liquid crystal display devices, plasma displays), optical disc substrates, magneto-optical disc substrates, magnetic disc substrates, printed wiring boards, memory circuit substrates. , A logic circuit substrate, and an image sensor substrate (for example, a CMOS sensor substrate). Further, the shape is not limited to a circular shape, and may be, for example, a rectangular shape. The size of the semiconductor wafer in the case of a circle includes, for example, wafers having a diameter of 100 mm, 150 mm, 200 mm, 300 mm, and 450 mm.

The housing 2 has a substrate transfer path 3 extending in the longitudinal direction at the center thereof. A load/unload unit 10 is arranged at one end of the substrate transport path 3 in the longitudinal direction. A substrate polishing device 20 is provided on one side of the substrate transport path 3 in the width direction (direction orthogonal to the longitudinal direction in plan view), and a substrate cleaning device 30 is provided on the other side. A substrate transfer device 40 that transfers the substrate W is provided in the substrate transfer path 3. The substrate processing apparatus 1 also includes a control device (control panel) 50 that comprehensively controls the operations of the load/unload unit 10, the substrate polishing device 20, the substrate cleaning device 30, and the substrate transfer device 40.

The loading/unloading unit 10 includes a front loading unit 11 that accommodates the substrate W. A plurality of front load parts 11 are provided on one side surface of the housing 2 in the longitudinal direction. The plurality of front load portions 11 are arranged in the width direction of the housing 2. The front loading unit 11 is equipped with, for example, an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). The SMIF and FOUP are hermetically sealed containers in which the cassette of the substrate W is housed and covered with a partition wall, and can maintain an environment independent of the external space.

Further, the loading/unloading unit 10 includes two transfer robots 12 for loading/unloading the substrate W into/from the front loading unit 11, and a traveling mechanism 13 for causing the transfer robots 12 to travel along the alignment of the front loading unit 11. .. Each of the transfer robots 12 is provided with two upper and lower hands, and is used properly before and after processing the substrate W. For example, the upper hand is used to return the substrate W to the front load unit 11, and the lower hand is used to take out the unprocessed substrate W from the front load unit 11.

The substrate polishing apparatus 20 includes a plurality of polishing units 21 (21A, 21B, 21C, 21D) for polishing (flattening) the substrate W. The plurality of polishing parts 21 are arranged in the longitudinal direction of the substrate transport path 3. The polishing unit 21 includes a polishing table 23 that rotates a polishing pad 22 having a polishing surface, a top ring 24 that holds a substrate W and polishes the substrate W while pressing the substrate W against the polishing pad 22 on the polishing table 23, and a polishing pad. A polishing liquid supply nozzle 25 for supplying a polishing liquid or a dressing liquid (for example, pure water) to 22, a dresser 26 for dressing the polishing surface of the polishing pad 22, a liquid (for example, pure water) and a gas (for example, nitrogen gas). And an atomizer 27 for atomizing the mixed fluid or liquid (for example, pure water) of the above to the polishing surface.

In the polishing section 21, while the polishing liquid is supplied from the polishing liquid supply nozzle 25 onto the polishing pad 22, the substrate W is pressed against the polishing pad 22 by the top ring 24, and the top ring 24 and the polishing table 23 are relatively moved. Thus, the substrate W is polished to make its surface flat. In the dresser 26, hard particles such as diamond particles and ceramic particles are fixed to a rotating portion at a tip end that contacts the polishing pad 22, and the rotating portion is swung while rotating to uniformly cover the entire polishing surface of the polishing pad 22. To form a flat polished surface. The atomizer 27 cleans the polishing surface and polishing grains remaining on the polishing surface of the polishing pad 22 with a high-pressure fluid, and cleans the polishing surface and sharpens the polishing surface by the dresser 26, which is a mechanical contact, that is, polishing. Achieve face regeneration.

The substrate cleaning apparatus 30 includes a plurality of cleaning units 31 (31A, 31B) for cleaning the substrate W, and a drying unit 32 for drying the cleaned substrate W. The plurality of cleaning units 31 and the drying units 32 are arranged in the longitudinal direction of the substrate transport path 3. A first transfer chamber 33 is provided between the cleaning unit 31A and the cleaning unit 31B. The first transfer chamber 33 is provided with a transfer robot 35 that transfers the substrate W between the substrate transfer device 40, the cleaning unit 31A, and the cleaning unit 31B. A second transfer chamber 34 is provided between the cleaning unit 31B and the drying unit 32. The second transfer chamber 34 is provided with a transfer robot 36 that transfers the substrate W between the cleaning unit 31B and the drying unit 32.

The cleaning unit 31A includes, for example, a module including a roll-type cleaning member (a surface-made PVA (polyvinyl alcohol) sponge or urethane sponge) (hereinafter referred to as a roll-type cleaning module), and primarily cleans the substrate W. .. The cleaning unit 31B also includes a roll-type cleaning module and secondarily cleans the substrate W. The cleaning unit 31A and the cleaning unit 31B may be the same cleaning module or different cleaning modules. For example, a cleaning module including a pencil-type cleaning member, a cleaning module including a two-fluid jet type two-fluid jet nozzle that ejects gas and gas, and a cleaning liquid discharged from the cleaning nozzle are formed into a mist. Module (for example, refer to FIG. 8 of Japanese Patent Laid-Open No. 2018-101790).

The drying unit 32 includes, for example, a drying module that performs Rotagoni drying (IPA (Iso-Propyl Alcohol) drying). After the drying, the shutter 1a provided on the partition wall between the drying unit 32 and the loading/unloading unit 10 is opened, and the substrate W is taken out from the drying unit 32 by the transfer robot 12.

The “cleaning” referred to in the present embodiment includes not only normal cleaning using a liquid such as a chemical solution or pure water (referred to as wet cleaning in the present embodiment) but also cleaning not using a liquid at the time of cleaning (dry cleaning). Say) is included. Both of the cleaning unit 31A and the cleaning unit 31B may be a wet cleaning unit or a dry cleaning unit. Further, one of the cleaning unit 31A and the cleaning unit 31B may be a wet cleaning unit and the other may be a dry cleaning unit. When the wet cleaning is performed before the dry cleaning, the above-described drying unit 32 may be arranged to dry the substrate W.
That is, the dry cleaning unit may be arranged after the drying unit 32.

The substrate transfer device 40 includes a lifter 41, a first linear transporter 42, a second linear transporter 43, and a swing transporter 44. In the substrate transfer path 3, the first transfer position TP1, the second transfer position TP2, the third transfer position TP3, the fourth transfer position TP4, the fifth transfer position TP5, and the sixth transfer position are sequentially transferred from the load/unload unit 10 side. The position TP6 and the seventh transport position TP7 are set.

The lifter 41 is a mechanism that vertically transfers the substrate W at the first transfer position TP1. The lifter 41 receives the substrate W from the transfer robot 12 of the load/unload unit 10 at the first transfer position TP1. Further, the lifter 41 transfers the substrate W received from the transfer robot 12 to the first linear transporter 42. A shutter 1b is provided on a partition wall between the first transfer position TP1 and the loading/unloading section 10. When the substrate W is transferred, the shutter 1b is opened and the transfer robot 12 receives the substrate W on the lifter 41. Passed.

The first linear transporter 42 is a mechanism that transports the substrate W among the first transport position TP1, the second transport position TP2, the third transport position TP3, and the fourth transport position TP4. The first linear transporter 42 includes a plurality of transfer hands 45 (45A, 45B, 45C, 45D) and a linear guide mechanism 46 that horizontally moves each transfer hand 45 at a plurality of heights.
The transport hand 45A is moved by the linear guide mechanism 46 between the first transport position TP1 and the fourth transport position TP4. The transport hand 45A is a pass hand that receives the substrate W from the lifter 41 and transfers it to the second linear transporter 43.

The transport hand 45B is moved between the first transport position TP1 and the second transport position TP2 by the linear guide mechanism 46. The transport hand 45B receives the substrate W from the lifter 41 at the first transport position TP1 and transfers the substrate W to the polishing section 21A at the second transport position TP2. The transfer hand 45B is provided with an elevating/lowering drive unit, and moves up when the substrate W is transferred to the top ring 24 of the polishing unit 21A, and descends after transferring the substrate W to the top ring 24.
The transport hand 45C and the transport hand 45D are also provided with the same lifting drive unit.

The transport hand 45C is moved between the first transport position TP1 and the third transport position TP3 by the linear guide mechanism 46. The transport hand 45C receives the substrate W from the lifter 41 at the first transport position TP1 and transfers the substrate W to the polishing section 21B at the third transport position TP3. The transport hand 45C also functions as an access hand that receives the substrate W from the top ring 24 of the polishing section 21A at the second transport position TP2 and transfers the substrate W to the polishing section 21B at the third transport position TP3.

The transfer hand 45D is moved between the second transfer position TP2 and the fourth transfer position TP4 by the linear guide mechanism 46. The transport hand 45D receives the substrate W from the top ring 24 of the polishing section 21A or the polishing section 21B at the second transport position TP2 or the third transport position TP3, and receives the substrate W at the swing transporter 44 at the fourth transport position TP4. Functions as an access hand to pass.

The swing transporter 44 has a hand that can move between the fourth transport position TP4 and the fifth transport position TP5, and transfers the substrate W from the first linear transporter 42 to the second linear transporter 43. .. The swing transporter 44 also transfers the substrate W polished by the substrate polishing apparatus 20 to the substrate cleaning apparatus 30. On the side of the swing transporter 44, a temporary placing table 47 for the substrate W is provided. The swing transporter 44 vertically inverts the substrate W received at the fourth transfer position TP4 or the fifth transfer position TP5 and places it on the temporary placing table 47. The substrate W placed on the temporary placing table 47 is transferred to the first transfer chamber 33 by the transfer robot 35 of the substrate cleaning apparatus 30.

The second linear transporter 43 is a mechanism that transports the substrate W between the fifth transport position TP5, the sixth transport position TP6, and the seventh transport position TP7. The second linear transporter 43 includes a plurality of transport hands 48 (48A, 48B, 48C) and a linear guide mechanism 49 that horizontally moves each of the transport hands 45 at a plurality of heights. The transport hand 48A is moved between the fifth transport position TP5 and the sixth transport position TP6 by the linear guide mechanism 49. The transfer hand 45A functions as an access hand that receives the substrate W from the swing transporter 44 and transfers it to the polishing section 21C.

The transfer hand 48B moves between the sixth transfer position TP6 and the seventh transfer position TP7. The transfer hand 48B functions as an access hand that receives the substrate W from the polishing section 21C and transfers it to the polishing section 21D. The transport hand 48C moves between the seventh transport position TP7 and the fifth transport position TP5. The transfer hand 48C receives the substrate W from the top ring 24 of the polishing section 21C or the polishing section 21D at the sixth transfer position TP6 or the seventh transfer position TP7, and receives the substrate W at the swing transporter 44 at the fifth transfer position TP5. Functions as an access hand to pass. Although not described, the operation of the transfer hand 48 at the time of delivering the substrate W is the same as the operation of the first linear transporter 42 described above.

FIG. 2 is a perspective view showing the configuration of the cleaning unit 31 according to the embodiment.
The cleaning unit 31 includes, for example, a foreign matter removing device (cleaning module) 60 as shown in FIG. The foreign matter removing device 60 includes a rotating mechanism 80 that rotates the substrate W, and a roll cleaning member (contact member, cleaning member) 81 that rotates while making the peripheral surface contact with the substrate W. The rotation mechanism 80 includes a plurality of holding rollers 80a that hold the outer periphery of the substrate W and rotate about an axis extending in the vertical direction. The plurality of holding rollers 80a are connected to an electric drive unit such as a motor and rotate horizontally. Further, the plurality of holding rollers 80a have a configuration that can be moved up and down by an air drive unit such as an air cylinder.

The roll cleaning member 81 includes an upper roll cleaning member 81a that contacts the upper surface (polishing surface) W1 of the substrate W and a lower roll cleaning member 81b that contacts the lower surface W2 of the substrate W. The upper roll cleaning member 81a and the lower roll cleaning member 81b are connected to an electric drive unit such as a motor and rotate. The upper roll cleaning member 81a can be moved up and down by an air drive unit (actuator) such as an air cylinder. The lower roll cleaning member 81b is held at a constant height.

When setting the substrate W, first, the upper roll cleaning member 81a and the plurality of holding rollers 80a are raised. Next, the raised holding rollers 80a hold the substrate W in a horizontal posture, and then lower the substrate W until the lower surface W2 of the substrate W contacts the lower roll cleaning member 81b. Finally, the upper roll cleaning member 81a is lowered and brought into contact with the upper surface W1 of the substrate W.

After setting the substrate W in this manner, the pair of roll cleaning members 81 are rotated while rotating the substrate W by the holding roller 80a to remove foreign matters (fine particles) attached to the upper surface W1 and the lower surface W2 of the substrate W. To do. In the case of wet cleaning, at least one of a chemical solution and pure water may be supplied toward the upper surface W1 of the substrate W from a nozzle (not shown), and the substrate W may be scrub-cleaned by the pair of roll cleaning members 81. As the chemical solution, SC1 (ammonia/hydrogen peroxide mixed aqueous solution) or the like can be used.

FIG. 3 is a cross-sectional configuration diagram showing the roll cleaning member 81 according to the embodiment. FIG. 4 is an enlarged view showing the area A shown in FIG.
As shown in FIG. 3, the roll cleaning member 81 includes a rotating shaft 82, an elastic support 83, and a nanopillar structure 84. The rotating shaft 82 extends in the horizontal direction (the direction perpendicular to the plane of FIG. 3), and both ends thereof are supported by bearings (not shown) or the like. The elastic support body 83 is formed in a cylindrical shape and is horizontally supported by the rotating shaft 82. As the material of the elastic support body 83, for example, an elastic body such as a porous PVA sponge, urethane foam, rubber or elastomer can be used.

The nanopillar structure 84 is formed on the peripheral surface of the roll cleaning member 81, and is elastically supported by the elastic support 83. That is, the nanopillar structure 84 can be displaced in the radial direction of the roll cleaning member 81 by elastic deformation of the elastic support 83. As shown in FIG. 4, the nanopillar structure 84 has a plurality of nanosize pillars (columnar bodies) 85. The pillars 85 are two-dimensionally arranged on the surface 87 of the base 86. The base 86 on which the pillar 85 is erected may be integral with the elastic support body 83 or may be a separate body from the elastic support body 83. When the base 86 is a separate body from the elastic support body 83, the base 86 is more preferably a sheet body that can be wound around the peripheral surface of the elastic support body 83.

Pillar 85 is formed in a nano-sized substantially cylindrical or truncated cone shape. That is, the nanopillar structure 84 means a structure in which a plurality of columnar bodies having a substantially cylindrical shape or a truncated cone shape having a cross section having a size on the order of nanometers are provided so as to project over the surface 87 of the base 86.

Exemplifying the dimensions of the pillar 85 below, the diameter D of the pillar 85 is 100 nm (nanometers) or less, preferably about 4 nm to 20 nm. The height H of the pillar 85 is 100 nm or less, preferably about 10 nm to 100 nm. The gap S between the adjacent pillars 85 is 100 nm or less, preferably about 6 nm to 50 nm.

Such a pillar 85 can be formed on an inorganic/organic base material (base 86) such as Si (silicon) or carbon (graphene). For example, when the base 86 is an organic base material, it can be manufactured in the same manner as the following description (in the case of a Si wafer base material) after sputtering Si on the surface 87.

5A to 5D are process diagrams showing an example of a method for manufacturing the nanopillar structure 84 according to one embodiment.
In the manufacturing method described here, first, as shown in FIG. 5A, a Si wafer base material of an inorganic base material is prepared as the base 86. In addition, when the base 86 is an organic base material, Si may be sputtered on the surface 88 of the base 86 of the organic base material as described above. After such a base 86 is prepared, an oxide film (SiO ₂ ) is formed on the surface 88 of the base 86 (before the pillar 85 is formed).

Next, as shown in FIG. 5B, the ferritin 100 having the metal core 101 encapsulated in the protein 102 is two-dimensionally arranged on the surface of the base 86 on which the oxide film is formed. Ferritin 100 is also called Listeria ferritin, a biobioconjugate. Ferritin 100 has a structure in which a metal nucleus 101 made of iron oxide (Fe ₂ O ₃ ) also called an iron core is contained in a protein 102 containing a heme group bonded to the center of a cyclic compound called porphyrin. Ferritin 100 is a substance that can contain, for example, 4500 atoms of iron ions (Fe3+) in the metal nucleus 101, and is a complex protein of about 480 kDa containing 24 polypeptide subunits.

Next, as shown in FIG. 5C, the protein 102 of the ferritin 100 is annealed and removed in an oxygen atmosphere. As a result, the metal nuclei 101 made of the iron oxide core are left on the oxide film on the surface 88 of the base 86, and the metal nuclei 101 are two-dimensionally arranged. These metal nuclei 101 are a mask for etching in the next step.

Next, as shown in FIG. 5D, the oxide film (SiO ₂ ) on the surface 88 of the base 86 exposed from the mask is removed by NF ₃ gas/hydrogen radical treatment using the metal nuclei 101 as a mask. Further, anisotropic (vertical) neutral particle beam (NB) etching is performed using the metal nuclei 101 and the oxide film thereunder as a mask. In this process, the periphery of the mask is etched to the surface 87 (after the pillar 85 is formed), so that the shape of the mask is transferred to the base 86 as the pillar 85.

Finally, the metal nuclei 101 are removed by wet etching with HCl (hydrochloric acid). Note that the oxide film below the metal nucleus 101 can be removed by NF ₃ treatment or the like. In this way, the nanopillar structure 84 in which the nanosize pillars 85 are two-dimensionally arranged can be manufactured as shown in FIG. The gap S of the pillar 85 can be controlled by decorating the protein 102 shown in FIG. 5B with PEG (polyethylene glycol) having an appropriate molecular weight.

FIG. 6 is a configuration diagram showing the neutral particle beam etching apparatus 200 used in the manufacturing process of the nanopillar structure 84 according to one embodiment.
As shown in FIG. 6, the neutral particle beam etching apparatus 200 includes a support base 201 that supports a base (base material) 86, and a neutral particle beam irradiation apparatus 202 that irradiates the base 86 with a neutral particle beam. doing.

The neutral particle beam irradiation device 202 includes a beam generation unit 203 and an orifice plate 204. The beam generation unit 203 introduces gases such as SF ₆ , CHF ₃ , CF ₄ , Cl ₂ , Ar, O ₂ , N ₂ , and C ₄ F ₈ and turns them into plasma. The orifice plate 204 accelerates and neutralizes the ions generated by plasmaization, and irradiates the neutralized neutral particle beam to the base 86.

The orifice plate 204 has a plurality of openings 204a and is arranged between the beam generator 203 and the support base 201. The orifice plate 204 is an electrode whose surface is covered with a dielectric film, accelerates ions, and guides them to the opening 204a. The ions are neutralized at the peripheral wall of the opening 204a, neutralized by charge exchange with the gas remaining inside the opening 204a, or charged on the dielectric film of the orifice plate 204. It is neutralized by recombining with the electron and becomes a neutral particle beam.

The neutral particle beam that has been neutralized while passing through the orifice plate 204 goes straight through the opening 204a and is applied to the base 86 placed on the support 201, and the etching of the base 86 is performed by the neutral particle beam. It becomes possible to do it. The orifice plate 204 not only neutralizes the ions, but also prevents the radiation light generated from the plasma from irradiating the base 86. As a result, it is possible to reduce the influence of ultraviolet rays or the like that damages the base 86. Further, when an insulator such as glass or ceramic material is processed, charge-up occurs on the surface. However, by irradiating the neutralized particles thus neutralized, the charge-up amount can be kept small and high accuracy can be obtained. Etching is possible.

In the process of forming the nanopillar structure 84, a dry etching method other than the above-described method can be used depending on the material of the base 86. For example, a method of performing dry etching using an electron beam lithography technique as shown in US Pat. No. 8,906,244 may be used. Alternatively, for example, a method for producing a hybrid nanostructure in which nanopillars are arranged on a base layer, as shown in Japanese Patent Publication No. 2015-531816 or Japanese Unexamined Patent Publication No. 2018-161714, is used. It may be used to form the nanopillar structure 84.

FIGS. 7A to 7C are explanatory views showing how the foreign matter X1 and X2 attached to the substrate W according to the embodiment are removed by the nanopillar structure 84. As shown in FIG.
FIG. 7A shows that the nano-sized foreign matters X1 and X2 are attached to the upper surface W1 of the substrate W. For example, the foreign material X1 is an organic material, and the foreign material X2 is an inorganic material. If, for example, nano-sized foreign matters X1 and X2 are attached to the upper surface (polishing surface) W1 of the substrate W, it may cause various problems such as a short circuit in the nano-sized circuit wiring. , X2 should be removed as much as possible.

In the cleaning unit 31, the foreign matter removing apparatus 60 brings the roll cleaning member 81 having the nanopillar structure 84 closer to the upper surface W1 of the substrate W in the cleaning unit 31, as shown in FIG. 7B. The nanopillar structure 84 collects the foreign substances X1 and X2 attached to the upper surface W1 of the substrate W by contacting or approaching the upper surface W1 of the substrate W. Specifically, when the nanopillar structure 84 comes into contact with the upper surface W1 of the substrate W, the foreign matters X1 and X2 enter and are collected in the nanosize gaps of the pillar 85. Further, for example, when the nanopillar structure 84 comes into contact with or comes close to the upper surface W1 of the substrate W, an intermolecular force or the like is generated, and the foreign substances X1 and X2 are adsorbed and collected by the pillar 85.

When the roll cleaning member 81 comes into contact with the upper surface W1 of the substrate W and rotates, the foreign substances X1 and X2 attached to the upper surface W1 are scraped out by the pillars 85 and removed like brushes. Further, when the nanopillar structure 84 is triboelectrically charged, the foreign substances X1 and X2 can be electrostatically attracted to the pillar 85 and the like.
After the foreign matters X1 and X2 attached to the substrate W are removed by the nanopillar structure 84 as described above, the roll cleaning member 81 is separated from the substrate W as shown in FIG. 7C.

As described above, the principle of removing foreign matter by the nanopillar structure 84 is that the intermolecular force acting between the nanopillar structure 84 and the foreign matter acts, and the nanopillar structure 84 comes into contact with the substrate W relatively. When it is slid, a physical removal action is performed such that foreign matter is removed from the substrate W by sliding, and when cleaning is performed in the presence of a liquid such as a chemical solution, the chemical solution chemically reacts with the foreign matter. The lift-off effect and the like that act in combination act in a composite manner, whereby foreign substances can be removed by these. Further, in the case of wet cleaning, the foreign matter can be removed more effectively by rinsing the foreign matter once lifted off from the substrate W with pure water or a cleaning liquid.

In the case of a substrate polishing treatment process containing cobalt, cobalt has a lower standard electrode potential than copper and is more easily corroded than copper. It can be adversely affected by exposure. Therefore, after the chemical mechanical polishing of the substrate W, at least one of (A) a reducing agent having an electron donating property to the metal on the substrate W, (B) a deoxidizing agent for reducing dissolved oxygen, and (C) an anticorrosive agent. When cleaning the substrate W with a cleaning liquid containing one of them, the nano-pillar structure 84 described above is used to remove minute foreign matter adhering to the substrate W while suppressing the pressing force of the roll cleaning member 81 on the substrate. It is better to prevent corrosion more reliably.

As described above, according to the foreign matter removing apparatus 60 of the present embodiment described above, the nanopillar structure 84 having a plurality of nanosize pillars 85 is brought into contact with or close to the substrate W, and the foreign matter X1 attached to the substrate W. , X2 are removed. According to such a configuration, since the substrate W is cleaned by the nanopillar structure 84, the nano-level foreign substances X1 and X2 attached to the substrate W can be effectively removed.

In the present embodiment, the elastic support 83 that elastically supports the nanopillar structure 84 is provided. Therefore, the nanopillar structure 84 can be displaced in the radial direction of the roll cleaning member 81, and the nanopillar structure 84 is brought into close contact with the substrate W without adjusting/controlling the posture of the roll cleaning member 81 at the nano level. be able to. Therefore, the nano-level foreign substances X1 and X2 attached to the substrate W can be effectively removed.

The nanopillar structure 84 may be supported while the nanopillar structure 84 is moved toward or away from the substrate W by an actuator (not shown) instead of or together with the elastic support 83. Alternatively, as an example of the elastic support member 83, a stretchable and flexible structure such as an airbag can be used. Further, the elastic support body 83 can be substituted by the elasticity of the base material itself depending on the material of the base material (base 86) on which the nanopillar structure 84 is formed. That is, the elastic support body 83 may be a base material (base 86) on which the nanopillar structure 84 is formed.

Such a foreign matter removing device 60 may be provided in a dry cleaning unit for dry cleaning the substrate W in the substrate cleaning device 30 (see FIG. 1). Accordingly, since the cleaning liquid (liquid) is not present between the nanopillar structure 84 and the substrate W, the foreign substances X1 and X2 easily enter the gap of the nanopillar structure 84, and the nanopillar structure 84 causes the foreign substance X1 to enter. Intermolecular force or the like that collects X2 also easily occurs. Furthermore, since no liquid is used, corrosion is less likely to occur.
In addition, if the nanopillar structure 84 is close to the substrate W, it is possible to perform semi-physical cleaning capable of removing foreign matter without contact. Therefore, damage to the substrate W can be reduced as compared with non-contact cleaning such as conventional so-called two-fluid jet cleaning. In addition, such semi-physical cleaning can eliminate the concern that the pattern of the substrate W may collapse due to the process or conditions.

Further, the foreign matter removing device 60 includes, for example, at least one of the plurality of cleaning units 31 that sequentially cleans the substrate W in the substrate cleaning device 30 that wet-cleans the substrate W, for example, the final cleaning unit 31 (the cleaning illustrated in FIG. 1). It is more effective if it is provided in the portion 31B). For example, in the cleaning unit 31A for the primary cleaning of the substrate W, foreign substances of submicron level or higher are removed (rough cleaning), and in the cleaning unit 31B for the secondary cleaning of the substrate W, the nano-pillar structure 84 is used for the nano-level structure. By removing the foreign matter (finish cleaning), the substrate W can be efficiently cleaned.
Specifically, a cleaning flow as shown in FIG. 8 can be exemplified. First, the substrate W is loaded into the substrate cleaning device 30 (step S1), and then the substrate W is held (set) in the rotating mechanism 80 described above (step S2). Then, brush cleaning (coarse cleaning) is performed by the roll cleaning member 81 (without the nanopillar structure 84) described above (step S3), and the substrate W is rinsed with the liquid supplied from the nozzle (not shown) (step S4). .. Next, after the substrate W is loaded into the drying unit 32 or the like shown in FIG. 1 and the substrate W is dried (step S5), the roll cleaning member 81 having the nanopillar structure 84 described above (see FIGS. 2 and 3). Foreign matter removal (finish cleaning) is performed (step S6). After that, the holding of the substrate W is released (step S7), and the substrate W is unloaded from the substrate cleaning device 30 (step S8).

While the preferred embodiments of the invention have been described and described above, it should be understood that these are exemplary of the invention and should not be considered limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Therefore, the present invention should not be considered limited by the foregoing description, but rather by the claims.

For example, the forms shown in FIGS. 9 to 14 may be adopted. In the following description, configurations that are the same as or equivalent to those of the above-described embodiment will be assigned the same reference numerals, and description thereof will be simplified or omitted.

FIG. 9 is a perspective view showing a configuration of a foreign matter removing device 60 according to a modified example of the embodiment.
As shown in FIG. 9, the foreign matter removing device 60 includes a pencil cleaning member (contact member, cleaning member) 92. The foreign matter removing device 60 includes a rotating mechanism 90 that rotates the substrate W, and a pencil cleaning mechanism (actuator) 91 that rotates by bringing the pencil cleaning member 92 into contact with the substrate W. The rotating mechanism 90 includes a plurality of chucks 90a1 that hold the outer periphery of the substrate W, and a rotating stage 90a that rotates the substrate W around an axis extending in the vertical direction. The rotary stage 90a is connected to an electric drive unit such as a motor on the lower surface W2 side of the substrate W and horizontally rotates.

The pencil cleaning mechanism 91 includes a pencil cleaning member 92 and an arm 91b that holds the pencil cleaning member 92. The pencil cleaning member 92 has a contact portion 93 having a nanopillar structure 84 on a contact surface 92a which comes into contact with the substrate W, and a mounting portion 94 which is connected to the contact portion 93 and mounted on the tip of the arm 91b. The contact portion 93 is preferably a columnar elastic support member such as a PVA (polyvinyl alcohol) sponge or a urethane sponge. The pencil cleaning member 92 is rotated around an axis extending in the vertical direction by an electric drive unit such as a motor arranged inside the arm 91b.

The arm 91b is arranged above the substrate W. A swivel shaft 91c is connected to the base end of the arm 91b. An electric drive unit such as a motor for turning the arm 91b is connected to the turning shaft 91c. The arm 91b is configured to rotate about a rotation axis 91c in a plane parallel to the substrate W. That is, by rotating the arm 91b, the pencil cleaning member 92 supported by the arm 91b moves in the radial direction of the substrate W and cleans the upper surface W1 of the substrate W. As a result, the nano-level foreign matter attached to the upper surface W1 of the substrate W can be effectively removed.

FIG. 10 is a cross-sectional view of the pencil cleaning member 92 included in the foreign matter removing device 60 shown in FIG.
As shown in FIG. 10, the pencil cleaning member 92 has a contact portion (projection) 93 that contacts the substrate W when cleaning the substrate W, and a contact surface (tip surface of the projection) 92 a with the substrate W. In addition to having the nanopillar structure 84 described above, at least a part of the peripheral surface (peripheral surface) of the contact portion 93 other than the contact surface 92a is covered with the skin layer 95. The skin layer 95 shown in FIG. 10 covers the peripheral surface of the contact portion 93 from the base end side opposite to the contact surface 92a to the middle of the tip side, and also covers the peripheral surface of the mounting portion 94 on the base end side. ..

According to the above configuration, it is possible to prevent the nano-level foreign matter (fine particles) captured inside the pencil cleaning member 92 by the nanopillar structure 84 from reattaching to the substrate W.
That is, since the peripheral surface of the contact portion 93 is covered with the skin layer 95, the cleaning liquid that has collided with the peripheral surface of the contact portion 93 does not enter the inside of the contact portion 93, and it is difficult to discharge the captured fine particles, and the substrate W Can be prevented from being redeposited. Further, the skin layer 95 can prevent particles contained in the cleaning liquid from entering the inside of the contact portion 93 from the peripheral surface. Therefore, it is possible to more effectively prevent the pattern collapse on the substrate W during the cleaning/drying of the substrate W while performing the cleaning.

The skin layer 95 described above can be provided not only on the pencil cleaning member 92 but also on the roll cleaning member 81 described above. FIG. 11 is a perspective view showing a configuration of a foreign matter removing device 60 according to a modified example of the embodiment. The foreign matter removing device 60 shown in FIG. 11 includes a roll cleaning member 81 having a plurality of protrusions 82a on its peripheral surface. In such a configuration, if the nanopillar structure 84 described above is provided on the tip end surface of the protrusion 82a and the skin layer 95 described above is provided on the peripheral surface (peripheral surface) of the protrusion 82a other than the tip end surface, then The same effect as the effect is obtained.

FIG. 12 is a plan view showing the configuration of the foreign matter removing device 60 according to the modified example of the embodiment.
The foreign matter removing device 60 includes a bevel cleaning member (contact member) 111, as shown in FIG. The foreign matter removing device 60 includes a rotation mechanism (not shown) that rotates the substrate W, and a bevel cleaning mechanism 110 that rotates by contacting the bevel cleaning member 111 to the peripheral edge (bevel portion) W3 of the substrate W.

The bevel cleaning mechanism 110 includes a belt-shaped bevel cleaning member 111 and a rotating body 112 around which the bevel cleaning member 111 is wound. The bevel cleaning member 111 has a nanopillar structure 84 on a contact surface 111a that contacts the substrate W. The rotating body 112 has a peripheral surface formed of PVA sponge (elastic support) or the like, and elastically supports the bevel cleaning member 111. The rotating body 112 rotates the bevel cleaning member 111 in the direction opposite to the rotating direction of the substrate W. As a result, the peripheral edge W3 of the substrate W is cleaned, and the nano-level foreign matter adhering to the peripheral edge W3 can be effectively removed.

FIG. 13 is a side view showing the configuration of the substrate processing apparatus according to the modified example of the embodiment.
The substrate processing apparatus shown in FIG. 13 holds a substrate W horizontally and rotates a hollow substrate rotating mechanism 210 that rotates about its axis, and scrubs (rubs) the upper surface of the substrate W held by the substrate rotating mechanism 210. A scrubber (processing head, foreign matter removing device) 250 that removes foreign matters and scratches from the upper surface of the substrate W by washing) and a static pressure support mechanism 290 that supports the lower surface of the substrate W by fluid pressure in a non-contact manner. ..

The scrubber 250 is arranged above the substrate W held by the substrate rotating mechanism 210, and the static pressure support mechanism 290 is arranged below the substrate W held by the substrate rotating mechanism 210. Further, the static pressure support mechanism 290 is arranged in the inner space of the substrate rotation mechanism 210. The substrate rotation mechanism 210, the scrubber 250, and the static pressure support mechanism 290 are surrounded by the partition wall 206.

A clean air intake 206a and an exhaust duct 209 are formed in the partition wall 206, and an exhaust mechanism 208 is installed. The exhaust mechanism 208 includes a fan 208A and a filter 208B.
The surface treatment (scrub treatment), cleaning, and drying of the substrate W in the substrate processing apparatus according to the above-described embodiment may be continuously performed in the processing chamber 207 in the internal space of the partition wall 206.

The substrate rotating mechanism 210 includes a plurality of chucks 211 that grip the peripheral edge of the substrate W, and a hollow motor 212 that rotates the substrate W via the chucks 211. The stator of the hollow motor 212 is fixed to a cylindrical stationary member 214. Further, the rotor of the hollow motor 212 is fixed to the rotation base 216. The above-mentioned chuck 211 and the rotation cover 225 are provided on the rotation base 216. The chuck 211 is connected to the lift mechanism 230.

Above the substrate W, a cleaning liquid supply nozzle 227 that supplies pure water as a cleaning liquid to the upper surface of the substrate W is arranged. The cleaning liquid supply nozzle 227 is connected to a cleaning liquid supply source (not shown), and pure water is supplied to the upper surface of the substrate W through the cleaning liquid supply nozzle 227. The pure water supplied to the substrate W is shaken off from the rotating substrate W by centrifugal force, further captured by the inner peripheral surface of the rotation cover 225, and discharged from a liquid discharge hole (not shown). A two-fluid jet nozzle 300 is arranged above the substrate W.

The static pressure support mechanism 290 includes a support stage 291 arranged below the substrate W, a stage elevating mechanism 298 that elevates and lowers the support stage 291, and a stage rotating mechanism 299 that rotates the support stage 291.

The scrubber 250 is arranged above the substrate W. The scrubber 250 is connected to one end of a swing arm 253 via a scrubber shaft 251, and the other end of the swing arm 253 is fixed to a swing shaft 254. The swing shaft 254 is connected to the shaft rotation mechanism 255. When the swing shaft 254 is driven by the shaft rotating mechanism 255, the scrubber 250 moves between a position on the substrate W and a position retracted from the substrate W. A scrubber lifting mechanism (actuator) 256 for moving the scrubber 250 in the vertical direction is further connected to the swing shaft 254.

During scrubbing with the scrubber 250, pure water, a surfactant aqueous solution, and an alkaline or acidic cleaning liquid are supplied to the back surface of the substrate W facing upward. The cleaning liquid may be supplied to the back surface of the substrate W when the scrubber 250 is not in contact with the substrate W.

FIG. 14 is a cross-sectional view showing the tape cartridge 260 provided in the scrubber 250 shown in FIG.
As shown in FIG. 14, the tape cartridge 260 includes a cleaning tape (contact member) 261, a pressing member 262 that presses the cleaning tape 261 against the substrate W, and a biasing mechanism that biases the pressing member 262 toward the wafer. 263, a tape feeding reel 264 for feeding the cleaning tape 261, and a tape take-up reel 265 for winding the cleaning tape 261 used for the processing. Note that reference numeral 271 indicates an end mark detection sensor that detects an end mark of winding the cleaning tape 261.

The cleaning tape 261 is sent from the tape delivery reel 264 to the tape take-up reel 265 via the pressing member 262. The plurality of pressing members 262 extend in the radial direction of the scrubber 250 and are arranged at equal intervals in the circumferential direction of the scrubber 250. Therefore, the contact surface (substrate contact surface) of each cleaning tape 261 with the substrate W extends in the radial direction of the scrubber 250. In the example shown in FIG. 14, a spring is used as the biasing mechanism 263.

The nanopillar structure 84 described above may be provided on the contact surface of the cleaning tape 261 with the substrate W. According to this configuration, the removal rate of foreign matter on the entire back surface of the substrate W is increased, and not only the foreign matter having a size of 100 nm or more but also the nanoscale foreign matter can be removed more effectively. It can be removed more appropriately.

For example, instead of the rotating mechanism 80 shown in FIG. 2 described above, a mechanism for rotating and holding the substrate W while being magnetically levitated, as shown in International Publication No. 2018/003718 of the present applicant, is used. May be If this mechanism is combined with a roll cleaning member 81 having a nanopillar structure 84, foreign matter can be removed and cleaned at a level that can be practically used even while the pressing force on the held substrate W is reduced to some extent. it can.
As another embodiment, a configuration may be adopted in which the substrate W is held and fixed at a predetermined position while vacuum suction is performed from the back surface side of the substrate W by a method such as Bernoulli chuck.

For example, in the above embodiment, the contact member (the roll cleaning member 81, the pencil cleaning member 92, the bevel cleaning member 111) that contacts the substrate is rotated to remove foreign matter, but the contact member is not rotated. The foreign matter may be removed only by bringing it closer to the substrate. For example, a configuration may be adopted in which a support plate having the above-mentioned nanopillar structure is installed on the temporary placing table 47 shown in FIG. 1 and the foreign matter is removed from the substrate W placed on the support plate. The actuator in this case is, for example, the swing transporter 44 shown in FIG.
The form of foreign matter removal is not limited to the above-described form, and the foreign matter removal effect can be exhibited by pressing the sheet having the nanopillar structure 84 against the substrate (work) W or wiping the substrate (work) W with this sheet. .. The actuator in this case may be, for example, a multi-joint robot arm.

For example, in the above-described embodiment, the example in which the substrate W is placed horizontally (horizontal posture) and the foreign matter is removed is illustrated. However, for example, the substrate W may be placed vertically (vertical posture) to remove the foreign matter. Good.

For example, in the above embodiment, the foreign matter removing device of the present invention is applied to a substrate cleaning device, and such a substrate cleaning device is installed in a CMP substrate processing device. However, the foreign matter removing device may be a single substrate cleaning device used for cleaning the substrate, or a cleaning unit of a device other than the CMP device (for example, a back surface polishing device, a bevel polishing device, an etching device, or a plating device). Etc. can also be applied.
For example, as the substrate plating apparatus, the electrolytic plating apparatus described in Japanese Patent No. 61576964 can be exemplified. The apparatus of this example has a substrate cleaning device for cleaning the plated substrate. In the substrate cleaning apparatus, for example, the foreign matter removing apparatus 60 described above may be used after passing through the first cleaning unit, the second cleaning unit, and the drying unit.

Further, the present invention can be widely applied to removal of foreign matter from a work, which requires a wide range of cleanliness.
For example, in the pharmaceutical field, there is an evaluation called cleaning validation, in which after a drug manufacturing facility is washed to ensure quality in drug manufacturing, a residue evaluation test is conducted to prevent contamination of the predecessor drug and contamination by foreign substances. Has been done. However, an analysis error may occur in a series of analysis steps in which the residue is wiped from the object to be analyzed with a swab material and then extracted into water for measurement.
Therefore, wipe the residue of the analyte such as manufacturing tools used in the pharmaceutical manufacturing process with a swab material, and then extract it into water and measure it with nano-sized pillars on the surface of the swab material. You may make it have a nanopillar structure which has two or more. That is, a holding mechanism for holding a work in a chamber having a shielding structure, a swab material having a nanopillar structure having a plurality of nano-sized pillars for removing foreign matter adhering to the work, and the swab material and the work are contacted or An apparatus may be provided which includes an actuator to be brought close to it, and a sampling device for immersing the swab material from which foreign matter has been removed in the chamber in water in the tank to extract and sample the eluate. With this configuration, foreign matter can be more reliably removed from the swab material and sampled without using the combustion analysis method, so even if the combustion analysis method cannot be used, an analysis method that more reliably prevents the occurrence of analysis errors, etc. Can be provided, and the pharmaceutical manufacturing process can be reliably performed.

1 Substrate Processing Device 20 Substrate Polishing Device 30 Substrate Cleaning Device 31 Cleaning Section 44 Swing Transporter (Actuator)
60 foreign matter removing device 81 roll cleaning member (contact member, cleaning member)
Reference Signs List 82 rotation shaft 82a protrusion 83 elastic support 84 nanopillar structure 85 pillar 92 pencil cleaning member (contact member, cleaning member)
92a Contact surface (tip surface of protrusion)
93 Contact part (projection part)
111 Bevel cleaning member (contact member)
250 scrubber (foreign matter removal device)
256 scrubber lifting mechanism (actuator)
261 Cleaning tape (contact member)
W substrate (work)
X1 foreign material X2 foreign material

Claims (10)

1. A foreign matter removing device for removing foreign matter adhering to a work,
   A nanopillar structure having a plurality of nanosize pillars,
   An actuator that brings the nanopillar structure and the workpiece into contact with or in proximity to each other,
   Foreign matter removing device.
2. The foreign matter removing device according to claim 1, further comprising an elastic support that elastically supports the nanopillar structure.
3. A substrate cleaning apparatus for cleaning a substrate, comprising:
   The foreign matter removing device according to claim 1 or 2 is provided as a foreign matter removing device for removing foreign matter adhering to the substrate.
   Substrate cleaning equipment.
4. A dry cleaning unit for dry cleaning the substrate,
   The dry cleaning unit has the foreign matter removing device,
   The substrate cleaning apparatus according to claim 3.
5. A plurality of cleaning units for sequentially cleaning the substrate,
   At least one of the plurality of cleaning units has the foreign matter removing device,
   The substrate cleaning apparatus according to claim 3 or 4.
6. The foreign matter removing device has a contact member that comes into contact with the substrate,
   On the contact surface of the contact member with the substrate, having the nanopillar structure,
   The substrate cleaning apparatus according to any one of claims 3 to 5.
7. The substrate cleaning apparatus according to claim 6, wherein the contact member rotates relatively while contacting the substrate.
8. A substrate polishing apparatus for polishing a substrate;
   A substrate processing apparatus comprising: a substrate cleaning device for cleaning the substrate,
   A substrate processing apparatus comprising the substrate cleaning apparatus according to claim 3 as the substrate cleaning apparatus.
9. A plating device for plating the substrate,
   A substrate processing apparatus comprising: a substrate cleaning device for cleaning the substrate,
   A substrate processing apparatus comprising the substrate cleaning apparatus according to claim 3 as the substrate cleaning apparatus.
10. A cleaning member for cleaning a work,
    A protrusion that comes into contact with the work when cleaning the work,
    A nanopillar structure having a plurality of nanosize pillars provided on the tip surface of the protrusion,
    And a skin layer that covers at least a part of the peripheral surface of the protrusion other than the tip surface.

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