WO2020143486A1 - 射线转换器和射线探测平板装置 - Google Patents

射线转换器和射线探测平板装置 Download PDF

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Publication number
WO2020143486A1
WO2020143486A1 PCT/CN2019/129316 CN2019129316W WO2020143486A1 WO 2020143486 A1 WO2020143486 A1 WO 2020143486A1 CN 2019129316 W CN2019129316 W CN 2019129316W WO 2020143486 A1 WO2020143486 A1 WO 2020143486A1
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Prior art keywords
ray
panel device
flat panel
converter
mesoporous structure
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PCT/CN2019/129316
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English (en)
French (fr)
Inventor
卓恩宗
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HKC Co Ltd
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HKC Co Ltd
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Priority to US17/251,212 priority Critical patent/US11561309B2/en
Publication of WO2020143486A1 publication Critical patent/WO2020143486A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20185—Coupling means between the photodiode and the scintillator, e.g. optical couplings using adhesives with wavelength-shifting fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2023—Selection of materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
    • G01T1/2026—Well-type detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/208—Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section

Definitions

  • the present application relates to the technical field of ray detection, in particular to a ray converter and a ray detection flat panel device.
  • the ray detection flat panel device is a device that converts ray energy into an electrical signal that is convenient for recording and analysis, and has a wide range of applications in medicine and other fields.
  • the strength of the X-ray signal detected by the X-ray detection flat panel device depends on the density of the tissue in the cross-section of the irradiated part of the human body: high-density tissue, the intensity of the X-ray detected by the corresponding part is weak; the density is low In the corresponding tissue, the intensity of X-rays detected in the corresponding part is relatively strong; thus, according to the intensity of the detected X-rays, lesions and the like can be analyzed.
  • Radiation detection flat panel devices can be divided into two types, direct and indirect.
  • the intensity distribution of the rays is obtained by directly receiving the rays and converting them into electrical signals.
  • the indirect ray detection flat panel device it is not possible to directly receive the ray signal to obtain an electrical signal. It is necessary to convert the directly received ray into visible light and other outgoing light that can be detected by the ray converter, and further output the ray converter The light is detected to reflect the strength of the rays.
  • the main purpose of the present application is to provide a ray converter aimed at improving the detection effect of the ray detection flat panel device.
  • the present application provides a ray converter including a substrate and a conversion body, the substrate includes a dielectric carrier, the dielectric carrier has a mesoporous structure distributed in an array, the mesoporous structure Of the holes extend from the incident end to the exit end of the substrate; the conversion body is filled in the holes.
  • the present application provides a ray converter, the ray converter includes:
  • the porosity of the mesoporous structure is 60% to 80%, and the inner diameter of the channel is 2 nm to 10 nm;
  • the conversion body is filled in the channel.
  • the radiation detection flat panel device includes:
  • a ray converter including a substrate, the substrate includes a medium carrier, the medium carrier has a mesoporous structure distributed in an array, and the channels of the mesoporous structure are from the incident end to the exit end of the substrate Extension; conversion body, the conversion body is filled in the channel;
  • a light sensor which is located at the exit end of the radiation converter to detect the light emitted by the radiation converter.
  • the ray converter includes a substrate and a conversion body, the substrate includes a dielectric carrier, and the dielectric carrier has a mesoporous structure distributed in an array, and the channels of the mesoporous structure extend from the incident end to the exit end of the substrate; the conversion body is filled in In the hole.
  • the channel restricts the ray incident on the ray converter to propagate along its extension direction, and interacts with the conversion body filled in the channel during the propagation process, thereby converting the ray into visible light and other outgoing light, pending further detection.
  • the mesoporous structure on the medium carrier limits the propagation of rays and outgoing light, so that the outgoing light has better collimation.
  • the ray converter in the present application improves the intensity of the outgoing light while improving its collimation.
  • it reduces the difficulty of subsequently detecting the intensity of the outgoing light, which helps reduce the cost of detection and improve the accuracy of detection;
  • it also helps to reduce the dose of required radiation, thereby improving the safety of radiation utilization, especially in the medical field, which can effectively avoid the radiation radiation received by patients and obtain better detection results.
  • FIG. 1 is a schematic structural view of an example of a flat panel device for ray detection
  • FIG. 2 is a schematic structural diagram of an embodiment of a ray converter in this application.
  • FIG. 3 is a schematic diagram of the cross-sectional structure of the ray converter in FIG. 2;
  • FIG. 4 is a schematic structural diagram of an embodiment of a ray detection flat panel device in the present application.
  • first”, “second”, etc. are for descriptive purposes only, and cannot be understood as instructions or hints Its relative importance or implicitly indicates the number of technical features indicated.
  • the features defined as “first” and “second” may include at least one of the features either explicitly or implicitly.
  • the meaning of “and/or” appearing throughout the text is to include three parallel schemes, taking “A and/or B” as an example, including scheme A, or scheme B, or schemes satisfying both A and B.
  • the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of those skilled in the art to achieve. When the combination of technical solutions conflicts with each other or cannot be realized, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.
  • FIG. 1 is a schematic structural diagram of an example of a flat panel device for ray detection.
  • the flat panel device for ray detection includes a ray converter 100′ and an optical sensor, where the optical sensor includes a photodiode 210′ and a processing circuit 220′.
  • the arrows represent the propagation direction of electromagnetic waves including rays and outgoing light.
  • X-ray detection will be used as an example to specifically describe the structure and working mode of the ray converter and the ray detection flat panel device. As shown in FIG.
  • the X-ray to be detected is irradiated from the incident end of the ray converter 100' to the conversion body 120' therein, and interacts with the conversion body 120' to be converted into visible light of lower frequency and lower energy After the light is emitted, it is emitted from the exit end of the ray converter 100', irradiated onto the photodiode 210', and converted into an electrical signal under the action of the photodiode 210'. After further optimization and analysis by the processing circuit 220', an electrical signal that can better reflect the X-ray intensity is obtained.
  • the conversion body 120' here is granular, however, the granular conversion body 120' easily causes scattering of the electromagnetic waves propagating in the ray converter 100', and the outgoing light after conversion has different propagation directions and collimation Poorly, correspondingly, the intensity of the outgoing light in each direction is also low.
  • the present application proposes a ray converter aimed at improving the collimation of outgoing light and enhancing the intensity of outgoing light, thereby improving the performance of the ray detection flat panel device.
  • the ray converter 100 includes a substrate 110 and a conversion body 120.
  • the substrate 110 includes a dielectric carrier, and the dielectric carrier has a mesoporous structure distributed in an array.
  • the mesoporous structure The holes of the extend from the incident end to the exit end of the substrate 110; the conversion body 120 is filled in the holes.
  • the mesoporous structure distributed in an array on the media carrier forms a plurality of channels, and the conversion body 120 is filled in these channels.
  • the aperture extends from the incident end to the exit end of the substrate 110, X-rays propagate in the aperture, and interact with the converter 120 during the propagation process, thereby forming an outgoing light that can be directly detected.
  • the outgoing light has a wavelength range of 450nm ⁇ 650nm.
  • FIG. 2 there are three mesoporous structures with slightly different extension directions, which are mainly related to the formation process of the substrate 110, but this slight difference in extension direction has little effect on the collimation of the outgoing light, and can The manufacturing cost of the substrate 110 is effectively reduced.
  • the mesoporous structure generally has a pore size between 2nm and 50nm, and has the characteristics of extremely high specific surface area, regularly ordered pores, narrow pore size distribution and adjustable pore size. Filling the conversion body 120 in the channel can well enhance the interaction between the X-rays and the conversion body 120, thereby improving the conversion efficiency, that is, increasing the intensity of the outgoing light.
  • the medium carrier with mesoporous structure can be synthesized by molecular template, including hydrothermal synthesis method, room temperature synthesis, microwave synthesis, wet glue baking method, phase transition method, etc.
  • the inorganic material and the like constituting the medium carrier are dissolved in an organic solvent, and the medium carrier with a mesoporous structure formed by supramolecular self-assembly under the action of a template of a surfactant is then removed.
  • Organic solvents are sufficient.
  • the ray converter 100 includes a substrate 110 and a conversion body 120.
  • the substrate 110 includes a dielectric carrier.
  • the dielectric carrier has a mesoporous structure distributed in an array. The holes of the mesoporous structure extend from the incident end to the exit end of the substrate 110 ; Conversion body 120 is filled in the channel.
  • the aperture restricts the rays incident on the ray converter 100 to propagate along its extension direction, and interacts with the conversion body 120 filled in the aperture during the propagation process, thereby converting the rays into outgoing light such as visible light for further detection .
  • the mesoporous structure on the medium carrier limits the propagation of rays and outgoing light, so that the outgoing light has better collimation.
  • the ray converter 100 in the present application improves the intensity of the outgoing light while improving its collimation. On the one hand, it reduces the difficulty of subsequently detecting the intensity of the outgoing light, which helps reduce the cost of detection and improve the accuracy of detection; On the other hand, it also helps to reduce the dose of required radiation, thereby improving the safety of radiation utilization. Especially in the medical field, it can effectively avoid the radiation radiation received by patients and obtain better detection results.
  • the porosity of the mesoporous structure is 30% to 80%.
  • the porosity refers to the percentage of the pore volume in the material to the total volume. Since the conversion body 120 is filled in the pores of the medium carrier, the greater the porosity of the mesoporous structure means that the ratio of the conversion body 120 to the medium carrier is higher. The higher the porosity of the mesoporous structure, the more sufficient the conversion body 120 is, thereby helping to improve the conversion efficiency of X-rays, and the difficulty of filling the conversion body 120 is generally reduced.
  • the porosity of the mesoporous structure is 30% to 80%.
  • the porosity of the mesoporous structure can be 60% to 80%.
  • the inner diameter of the channel is 2nm ⁇ 10nm.
  • the specific surface area of the medium carrier per unit volume is larger, which helps to improve the conversion efficiency of the radiation, but accordingly, the difficulty of filling the conversion body 120 will also increase, if the amount of the conversion body 120 is not enough , Will lead to a reduction in the conversion efficiency of rays. Therefore, choosing a hole with an inner diameter of 2 nm to 10 nm can obtain a better conversion body filling effect and radiation conversion effect.
  • the propagation of electromagnetic waves can be regulated by controlling the refractive index of the material of the medium carrier. Specifically, when the refractive index of the material of the dielectric carrier is greater than the refractive index of the air or the converter in the channel, it is possible to form total reflection of the electromagnetic wave, thereby achieving efficient and collimated electromagnetic wave propagation.
  • selecting a medium carrier with a material refractive index of 1.45 to 1.5 can, on the one hand, improve the propagation effect of rays and outgoing light, and on the other hand, its cost is relatively appropriate, avoiding the situation of excessive cost.
  • the material of the dielectric carrier includes at least one of silicon oxide, silicon nitride, and zirconium oxide.
  • Silicon oxide, silicon nitride, and zirconium oxide are common materials in semiconductor technology. Their growth and crystallization processes are relatively mature, with a variety of crystal types, optical parameters such as refractive index meet basic requirements, and their chemical properties are stable. Therefore, it is relatively simple and convenient to obtain the medium carrier of the desired structure according to the actual needs, forming a stable mesoporous structure, thereby improving the performance of the ray converter.
  • the material of the conversion body includes at least one of cesium iodide and sodium iodide.
  • Cesium iodide and sodium iodide are light-sensitive substances that can effectively convert X-rays into visible light that is easy to detect.
  • cesium iodide and sodium iodide can also add a small amount of thallium and other activating substances, thereby further improving the conversion effect of the conversion body.
  • the present application also proposes a ray detection flat panel device.
  • the ray detection flat panel device includes a ray converter 100 and a light sensor.
  • the light sensor is located at the exit end of the ray converter 100 to detect the light emitted by the ray converter 100.
  • the arrows show the directions of rays and outgoing light.
  • the ray detection flat panel device may be arranged in a flat plate shape.
  • the ray converter 100 is arranged in a plate shape to receive X-rays and convert the X-rays into visible light and other outgoing light, pending further detection.
  • the ray converter 100 limits the propagation of the ray and the outgoing light, the collimation of the outgoing light is greatly improved, thereby helping to improve the subsequent detection effect.
  • the specific structure of the ray converter 100 refers to the above embodiments. Since the ray converter 100 adopts all the technical solutions of all the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments. This will not be repeated one by one.
  • the light sensor includes a PIN-type photodiode 210 and an amplifier circuit 220, and the sensing surface of the PIN-type photodiode 210 is disposed toward the exit end of the ray converter 100; the amplifier circuit 220 is electrically connected to the PIN-type photodiode 210 to amplify the PIN The output electrical signal of the type photodiode.
  • the PIN-type photodiode 210 is formed by adding an intrinsic semiconductor layer, that is, an I-type layer, between the P region and the N region of the PN junction, and generates a photocurrent by absorbing optical radiation to realize the detection of light.
  • the drift component in the photocurrent dominates, its junction capacitance is small, the transit time is short, the sensitivity is high, and it has a good detection effect, so it is suitable for flat panel devices for radiation detection.
  • the amplification circuit 220 further amplifies the directly generated photocurrent, which helps to improve the signal-to-noise ratio of the current signal, thereby improving the detection effect.

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Abstract

一种射线转换器和射线探测平板装置，射线转换器（100，100'）包括基板（110）和转换体（120），基板（110）包括介质载体，介质载体具有呈阵列分布的介孔结构，介孔结构的孔道自基板（110）的入射端向出射端延伸；转换体（120）填充于孔道中；射线探测平板装置包括射线转换器（100，100'）和光传感器。

Description

射线转换器和射线探测平板装置
相关申请
本申请要求2019年1月11日申请的，申请号201910031220.3，名称为“射线转换器和射线探测平板装置”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本申请涉及射线探测技术领域，尤其涉及一种射线转换器和射线探测平板装置。
 背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
射线探测平板装置是一种将射线能量转换为便于记录、分析的电信号的装置，在医学等领域内有着广泛的应用。例如，X射线探测平板装置所探测得到的X射线信号的强弱，取决于被辐照部分人体截面内组织的密度：密度高的组织，对应部分所探测到的X射线强度较弱；密度低的组织，对应部分所探测到的X射线强度较强；从而根据探测到的X射线的强度，可以对病灶等进行分析。射线探测平板装置可以分为直接式和非直接式两种。在直接式射线探测平板装置中，通过直接接收射线并转换为电信号，得到射线的强弱分布状况。而在非直接式射线探测平板装置中，不能直接接收射线信号而得到电信号，需要通过射线转换器将直接接收到的射线转换为可以被检测的可见光等出射光，进一步对射线转换器的出射光进行检测，从而反映出射线的强弱。但是，由于射线本身存在一定的发散，以及射线在经过射线转换器的过程中被其中转换体材料等散射，导致转换而得的出射光的强度较低、准直性较差，一方面提高了后续步骤中检测出射光强弱的难度，另一方面也使得所需的射线剂量增强，容易引发安全隐患，综上，目前射线探测平板装置的探测效果较差。
 技术解决方案
本申请的主要目的在于提供一种射线转换器，旨在改善射线探测平板装置的探测效果。
为实现上述目的，本申请提供一种射线转换器，所述射线转换器包括基板和转换体，所述基板包括介质载体，所述介质载体具有呈阵列分布的介孔结构，所述介孔结构的孔道自所述基板的入射端向出射端延伸；所述转换体填充于所述孔道中。
为实现上述目的，本申请提供一种射线转换器，所述射线转换器包括：
基板，所述基板包括介质载体，所述介质载体具有呈阵列分布的介孔结构，所述介孔结构的孔道的延伸方向相一致，且所述孔道自所述基板的入射端向出射端延伸，其中，所述介孔结构的孔隙率为60%~80%，所述孔道的内径为2nm~10nm；
转换体，所述转换体填充于所述孔道中。
为实现上述目的，本申请提供一种射线探测平板装置，所述射线探测平板装置包括：
射线转换器，所述射线转换器包括：基板，所述基板包括介质载体，所述介质载体具有呈阵列分布的介孔结构，所述介孔结构的孔道自所述基板的入射端向出射端延伸；转换体，所述转换体填充于所述孔道中；
光传感器，所述光传感器位于所述射线转换器的出射端，以检测所述射线转换器的出射光。
本申请技术方案中，射线转换器包括基板和转换体，基板包括介质载体，介质载体具有呈阵列分布的介孔结构，介孔结构的孔道自基板的入射端向出射端延伸；转换体填充于孔道中。孔道限制入射至射线转换器上的射线沿其延伸方向传播，并在传播过程中与填充在孔道内的转换体发生相互作用，从而将射线转换为可见光等出射光，以待进一步的探测。通过介质载体上的介孔结构，限制了射线和出射光的传播，从而使得出射光具有较好的准直性。并且，射线与转换体在孔道中充分接触，从而提高了转换效率，使得出射光的强度得到了一定程度的提升。因此，本申请中的射线转换器在提高了出射光强度的同时，改善了其准直性，一方面降低了后续检测出射光强度的难度，有助于降低检测成本，提高检测准确度；另一方面也有助于降低所需射线的剂量，从而提高了射线利用的安全性，特别是在医学领域中，能够有效避免患者所接受的射线辐照，获得较好的探测效果。
 附图说明
图1是一范例中射线探测平板装置的结构示意图；
图2是本申请中射线转换器一实施例的结构示意图；
图3是图2中射线转换器的截面结构示意图；
图4是本申请中射线探测平板装置一实施例的结构示意图。
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明，若本申请实施例中有涉及方向性指示（诸如上、下、左、右、前、后……），则该方向性指示仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，若本申请实施例中有涉及“第一”、“第二”等的描述，则该“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，全文中出现的“和/或”的含义为，包括三个并列的方案，以“A和/或B”为例，包括A方案，或B方案，或A和B同时满足的方案。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
图1所示是一范例中射线探测平板装置的结构示意图，如图1所示，射线探测平板装置包括射线转换器100’和光传感器，其中，光传感器包括光电二极管210’和处理电路220’，箭头代表包括射线和出射光在内的电磁波的传播方向。在后文中，将以对X射线的探测为例，具体说明射线转换器和射线探测平板装置的结构和工作方式。如图1所示，待探测的X射线从射线转换器100’的入射端照射到其中的转换体120’上，与转换体120’发生相互作用而转换为较低频率、较低能量的可见光等出射光，并从射线转换器100’的出射端出射，照射至光电二极管210’上，在光电二极管210’的作用下转换为电信号。并经处理电路220’的进一步优化和分析，得到能够较好反映出X射线强度的电信号。这里的转换体120’呈颗粒状，然而，颗粒状的转换体120’很容易对射线转换器100’中传播的电磁波造成散射作用，转换后所得的出射光的传播方向各异，准直性很差，相应的，每一方向上的出射光的强度也较低。
本申请提出一种射线转换器，旨在改善出射光的准直性，增强出射光强度，从而改善射线探测平板装置的性能。在本申请的一实施例中，如图2和图3所示，射线转换器100包括基板110和转换体120，基板110包括介质载体，介质载体具有呈阵列分布的介孔结构，介孔结构的孔道自基板110的入射端向出射端延伸；转换体120填充于孔道中。
具体的，如图3所示，介质载体上呈阵列分布的介孔结构形成多个孔道，而转换体120填充在这些孔道中。孔道自基板110的入射端向出射端延伸，X射线在孔道中传播，并在传播过程中与转换体120发生相互作用，从而形成可被直接检测的出射光，通常，出射光的波长范围在450nm~650nm。在图2中，存在三种延伸方向略有区别的介孔结构，这主要是与基板110的形成过程有关，但是这种延伸方向的微小差别对出射光准直性的影响较小，且能够有效降低基板110的制备成本。当然，在更理想的状况下，可以制备延伸方向的一致性更好的介质载体制成基板110，从而进一步改善出射光的准直性。介孔结构作为一种多孔结构，其孔径一般在2nm~50nm之间，并具有极高的比表面积、规则有序的孔道、狭窄的孔径分布和孔径大小可调等特点。将转换体120填充在孔道中，能够很好地增强X射线与转换体120之间的相互作用，从而提高转换效率，也就是提高出射光的强度。其中，具有介孔结构的介质载体可以通过分子模板合成，包括水热合成法、室温合成、微波合成、湿胶焙烧法、相转变法等。在一具体示例中，将构成介质载体的无机材料等溶解在有机溶剂中，在表面活性剂的模板作用下，通过超分子自组装而形成的具有介孔结构的介质载体，再去除掉其中的有机溶剂即可。
在本实施例中，射线转换器100包括基板110和转换体120，基板110包括介质载体，介质载体具有呈阵列分布的介孔结构，介孔结构的孔道自基板110的入射端向出射端延伸；转换体120填充于孔道中。孔道限制入射至射线转换器100上的射线沿其延伸方向传播，并在传播过程中与填充在孔道内的转换体120发生相互作用，从而将射线转换为可见光等出射光，以待进一步的探测。通过介质载体上的介孔结构，限制了射线和出射光的传播，从而使得出射光具有较好的准直性。并且，射线与转换体在孔道中充分接触，从而提高了转换效率，使得出射光的强度得到了一定程度的提升。因此，本申请中的射线转换器100在提高了出射光强度的同时，改善了其准直性，一方面降低了后续检测出射光强度的难度，有助于降低检测成本，提高检测准确度；另一方面也有助于降低所需射线的剂量，从而提高了射线利用的安全性，特别是在医学领域中，能够有效避免患者所接受的射线辐照，获得较好的探测效果。
进一步的，介孔结构的孔隙率为30%~80%。其中，孔隙率是指材料中孔隙体积与总体积的百分比。由于转换体120填充在介质载体的孔道中，因此，介孔结构的孔隙率越大，意味着转换体120相对介质载体的比例越高。介孔结构的孔隙率越高，转换体120越充足，从而有助于提高X射线的转换效率，且转换体120的填充难度通常也会降低。而介孔结构的孔隙率越低，则介质载体的合成难度相应降低，且可以改善对射线和出射光的限制作用，有助于得到较好的准直性。在本申请中，可选的介孔结构的孔隙率为30%~80%。
为了得到更高转换效率的射线转换器，从而降低所需的射线剂量，提高出射光的强度，介孔结构的孔隙率可以为60%~80%。
进一步的，孔道的内径为2nm~10nm。当孔道的内径越小时，单位体积内介质载体的比表面积越大，从而有助于改善射线的转换效率，但相应的，转换体120的填充难度也将增大，若转换体120的量不够，将导致射线的转换效率的下降。因此，选用内径为2nm~10nm的孔道，可以得到较好的转换体填充效果和射线转换效果。
由于射线在介质载体的孔道中传播，且出射光在孔道中生成并传播，因此，可以通过控制介质载体的材料折射率，对电磁波的传播进行调控。具体的，当介质载体的材料折射率大于孔道中空气或转换体的折射率时，有可能形成电磁波的全反射，从而实现高效且准直性好的电磁波传播。在本实施例中，选择材料折射率为1.45~1.5的介质载体，一方面可以改善射线和出射光的传播效果，另一方面其成本也相对合适，避免出现成本过高的情形。
在本申请的上述实施例中，介质载体的材料包括氧化硅、氮化硅和氧化锆中的至少一种。氧化硅、氮化硅和氧化锆等均为半导体工艺中常见的材料，其生长、结晶工艺相对成熟，具有多种晶型，折射率等光学参数符合基本要求，且化学性质稳定。因此可以相对简单方便地根据实际需求得到所需结构的介质载体，形成稳定的介孔结构，从而改善射线转换器的性能。
在本申请的上述实施例中，转换体的材料包括碘化铯和碘化钠中的至少一种。碘化铯和碘化钠等是对光敏感的物质，能够有效地将X射线等转换为易于检测的可见光。当然，在碘化铯和碘化钠中还可以添加少量的铊等激活物质，从而进一步改善转换体的转换效果。
本申请还提出一种射线探测平板装置，如图4所示，射线探测平板装置包括射线转换器100和光传感器，光传感器位于射线转换器100的出射端，以检测射线转换器100的出射光，箭头所示为射线和出射光的传播方向。射线探测平板装置可以呈平板状设置，相应的，射线转换器100呈板状设置，以接收X射线，并将X射线转换为可见光等出射光，以待进一步的检测。由于射线转换器100限制了射线和出射光的传播，因此，出射光的准直性大大提高，从而有利于改善后续的检测效果。其中，射线转换器100的具体结构参照上述各实施例，由于本射线转换器100采用了上述所有实施例的全部技术方案，因此至少具有上述实施例的技术方案所带来的所有有益效果，在此不再一一赘述。
进一步的，光传感器包括PIN型光电二极管210和放大电路220，PIN型光电二极管210的传感面朝向射线转换器100的出射端设置；放大电路220与PIN型光电二极管210电连接，以放大PIN型光电二极管的输出电信号。其中，PIN型光电二极管210是在PN结的P区与N区之间加入本征半导体层，即I型层形成，通过吸收光辐射而产生光电流，实现对光的检测。PIN型光电二极管中，光电流中的漂移分量占主导地位，其结电容小、渡越时间短、灵敏度高，具有很好的检测效果，因此适用于射线探测平板装置中。进一步的，通过放大电路220对直接产生的光电流进一步放大，有助于提高电流信号的信噪比，从而改善探测效果。
以上所述仅为本申请的可选实施例，并非因此限制本申请的专利范围，凡是在本申请的发明构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。

Claims (20)

  1. 一种射线转换器，其中，所述射线转换器包括：
    基板，所述基板包括介质载体，所述介质载体具有呈阵列分布的介孔结构，所述介孔结构的孔道自所述基板的入射端向出射端延伸；
    转换体，所述转换体填充于所述孔道中。
  2. 如权利要求1所述的射线转换器，其中，所述介质载体通过分子模板合成，所述分子模板合成方法包括水热合成法、室温合成、微波合成、湿胶焙烧法、相转变法中的至少一种。
  3. 如权利要求1所述的射线转换器，其中，所述介孔结构的孔隙率为30%~80%。
  4. 如权利要求1所述的射线转换器，其中，所述介孔结构的孔隙率为60%~80%。
  5. 如权利要求3所述的射线转换器，其中，所述孔道的内径为2nm~10nm。
  6. 如权利要求1所述的射线转换器，其中，所述介质载体的材料折射率为1.45~1.5。
  7. 如权利要求1所述的射线转换器，其中，所述介质载体的材料包括氧化硅、氮化硅和氧化锆中的至少一种。
  8. 如权利要求1所述的射线转换器，其中，所述转换体的材料包括碘化铯和碘化钠中的至少一种。
  9. 一种射线转换器，其中，所述射线转换器包括：
    基板，所述基板包括介质载体，所述介质载体具有呈阵列分布的介孔结构，所述介孔结构的孔道的延伸方向相一致，且所述孔道自所述基板的入射端向出射端延伸，其中，所述介孔结构的孔隙率为60%~80%，所述孔道的内径为2nm~10nm；
    转换体，所述转换体填充于所述孔道中。
  10. 一种射线探测平板装置，其中，所述射线探测平板装置包括：
    射线转换器，所述射线转换器包括：基板，所述基板包括介质载体，所述介质载体具有呈阵列分布的介孔结构，所述介孔结构的孔道自所述基板的入射端向出射端延伸；转换体，所述转换体填充于所述孔道中；
    光传感器，所述光传感器位于所述射线转换器的出射端，以检测所述射线转换器的出射光。
  11. 如权利要求10所述的射线探测平板装置，其中，所述射线探测平板装置呈平板状设置，所述射线转换器呈板状设置，以接收X射线，并将X射线转换为可见光等出射光。
  12. 如权利要求10所述的射线探测平板装置，其中，所述介质载体通过分子模板合成，所述分子模板合成方法包括水热合成法、室温合成、微波合成、湿胶焙烧法、相转变法中的至少一种。
  13. 如权利要求10所述的射线探测平板装置，其中，所述介孔结构的孔隙率为30%~80%。
  14. 如权利要求10所述的射线探测平板装置，其中，所述介孔结构的孔隙率为60%~80%。
  15. 如权利要求11所述的射线探测平板装置，其中，所述孔道的内径为2nm~10nm。
  16. 如权利要求12所述的射线探测平板装置，其中，所述孔道的内径为2nm~10nm。
  17. 如权利要求10所述的射线探测平板装置，其中，所述介质载体的材料折射率为1.45~1.5。
  18. 如权利要求10所述的射线探测平板装置，其中，所述介质载体的材料包括氧化硅、氮化硅和氧化锆中的至少一种。
  19. 如权利要求10所述的射线探测平板装置，其中，所述转换体的材料包括碘化铯和碘化钠中的至少一种。
  20. 如权利要求10所述的射线探测平板装置，其中，所述光传感器包括：
    PIN型光电二极管，所述PIN型光电二极管的传感面朝向所述射线转换器的出射端设置；
    放大电路，所述放大电路与所述PIN型光电二极管电连接，以放大所述PIN型光电二极管的输出电信号。
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
CN109782328B (zh) * 2019-01-11 2021-03-26 惠科股份有限公司 射线转换器和射线探测平板装置
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002090463A (ja) * 2000-09-12 2002-03-27 Shimadzu Corp 放射線検出器
CN1347506A (zh) * 1999-04-14 2002-05-01 埃克斯康特尔股份公司 辐射探测器和一种用在射线照相中的设备
CN102183778A (zh) * 2011-05-04 2011-09-14 深圳市贝斯达医疗器械有限公司 一种闪烁探头
CN103681701A (zh) * 2012-09-24 2014-03-26 上海天马微电子有限公司 光电转换元件、x射线平板探测装置及其制作方法
CN105093259A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 射线探测器
CN206671574U (zh) * 2017-04-17 2017-11-24 山西省肿瘤医院 一种核医学成像设备spect/ct的射线探测器
CN108351425A (zh) * 2015-07-09 2018-07-31 皇家飞利浦有限公司 用于利用堆叠式探测器同时进行x射线成像和伽马光子成像的设备和方法
CN109782328A (zh) * 2019-01-11 2019-05-21 惠科股份有限公司 射线转换器和射线探测平板装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100668609B1 (ko) * 2004-09-24 2007-01-16 엘지전자 주식회사 백색광원소자
US8158247B2 (en) * 2008-01-30 2012-04-17 Los Alamos National Security, Llc Porous light-emitting compositions
US8674309B2 (en) * 2010-01-28 2014-03-18 Canon Kabushiki Kaisha Scintillator crystal body, method for manufacturing the same, and radiation detector
DE102010041525B4 (de) * 2010-09-28 2013-03-28 Siemens Aktiengesellschaft Feuchtestabiler Szintillator und Verfahren zur Herstellung eines feuchtestabilen Szintillators
JP5121960B2 (ja) * 2011-03-30 2013-01-16 キヤノン株式会社 相分離構造を有するシンチレータ結晶体
JP5138104B2 (ja) * 2011-03-30 2013-02-06 キヤノン株式会社 多孔質シンチレータ結晶体
US8586931B2 (en) * 2011-07-12 2013-11-19 Canon Kabushiki Kaisha Scintillator having phase separation structure and radiation detector using the same
JP2013024731A (ja) * 2011-07-21 2013-02-04 Canon Inc 放射線検出装置
JP5901169B2 (ja) * 2011-07-26 2016-04-06 キヤノン株式会社 シンチレータ構造体および放射線検出器
JP6066608B2 (ja) * 2011-07-27 2017-01-25 キヤノン株式会社 相分離構造を有するシンチレータおよびそれを用いた放射線検出器
DE102011116230B4 (de) * 2011-10-17 2018-10-25 Osram Opto Semiconductors Gmbh Keramisches Konversionselement, optoelektronisches Halbleiterbauelement mit einem keramischen Konversionselement und Verfahren zur Herstellung eines keramischen Konversionselements
WO2014078184A1 (en) * 2012-11-15 2014-05-22 Carestream Health, Inc. Digital radiography detector
JP6289157B2 (ja) * 2013-03-05 2018-03-07 キヤノン株式会社 シンチレータ及び放射線検出器
WO2014180658A1 (en) * 2013-05-08 2014-11-13 Koninklijke Philips N.V. Gamma radiation detection device
JP6271909B2 (ja) * 2013-08-20 2018-01-31 キヤノン株式会社 シンチレータ結晶体及び放射線検出器
CN107850676B (zh) * 2015-08-07 2022-01-14 皇家飞利浦有限公司 基于量子点的成像探测器
US10571580B2 (en) * 2015-11-11 2020-02-25 Siemens Healthcare Gmbh Detector element for detecting incident x-ray radiation
JP6774188B2 (ja) * 2016-02-23 2020-10-21 キヤノン株式会社 シンチレータプレート、放射線検出器及び放射線計測システム

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1347506A (zh) * 1999-04-14 2002-05-01 埃克斯康特尔股份公司 辐射探测器和一种用在射线照相中的设备
JP2002090463A (ja) * 2000-09-12 2002-03-27 Shimadzu Corp 放射線検出器
CN102183778A (zh) * 2011-05-04 2011-09-14 深圳市贝斯达医疗器械有限公司 一种闪烁探头
CN103681701A (zh) * 2012-09-24 2014-03-26 上海天马微电子有限公司 光电转换元件、x射线平板探测装置及其制作方法
CN108351425A (zh) * 2015-07-09 2018-07-31 皇家飞利浦有限公司 用于利用堆叠式探测器同时进行x射线成像和伽马光子成像的设备和方法
CN105093259A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 射线探测器
CN206671574U (zh) * 2017-04-17 2017-11-24 山西省肿瘤医院 一种核医学成像设备spect/ct的射线探测器
CN109782328A (zh) * 2019-01-11 2019-05-21 惠科股份有限公司 射线转换器和射线探测平板装置

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