WO2020138146A1 - Dispositif de del à ultraviolets profonds et son procédé de fabrication - Google Patents

Dispositif de del à ultraviolets profonds et son procédé de fabrication Download PDF

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WO2020138146A1
WO2020138146A1 PCT/JP2019/050774 JP2019050774W WO2020138146A1 WO 2020138146 A1 WO2020138146 A1 WO 2020138146A1 JP 2019050774 W JP2019050774 W JP 2019050774W WO 2020138146 A1 WO2020138146 A1 WO 2020138146A1
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type
layer
forming
sio
electrode
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PCT/JP2019/050774
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Japanese (ja)
Inventor
行雄 鹿嶋
恵里子 松浦
小久保　光典
田代　貴晴
秀樹 平山
哲利 前田
昌史 定
隆一郎 上村
大和 長田
寛治 古田
武 岩井
洋平 青山
祝迫　恭
裕之 大神
丞益 長野
高木　秀樹
優一 倉島
貴司 松前
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丸文株式会社
東芝機械株式会社
国立研究開発法人理化学研究所
株式会社アルバック
東京応化工業株式会社
日本タングステン株式会社
大日本印刷株式会社
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Publication of WO2020138146A1 publication Critical patent/WO2020138146A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to a deep ultraviolet LED device and a method for manufacturing the same.
  • Deep UV LEDs with an emission wavelength of 200 nm to 355 nm have a wide range of applications including sterilization, medical/agricultural applications, resin curing/printing/paint industrial applications.
  • the current deep UV LED has a Flip Chip structure in which a semiconductor layer is crystal-grown on a sapphire substrate and then electrodes are formed to extract deep UV light from the sapphire substrate side, and the power-light conversion efficiency (WPE) is less than 3%.
  • the output is as low as less than 100 mW and does not reach the output of several hundred mW required for the above applications.
  • the main reason is that all the light emitted from the quantum well layer is absorbed by the p-type GaN contact layer and the light extraction efficiency (LEE) is 5% or less.
  • Patent Document 1 As shown in FIG. 17B of Patent Document 1, by using a structure of an Al supporting substrate, a transparent p-type AlGaN contact layer, and an Al reflective electrode layer, as shown in Table 9 of Patent Document 1, LEE 31 % Has been achieved. However, the WPE is not so improved because the driving voltage increases by 3 to 4V. Moreover, even if the current injection is increased due to the efficiency droop due to heat, the output cannot reach 100 mW or more.
  • Patent Document 2 by using a conductive substrate as the supporting substrate, it is possible to supply electric power from the substrate side and have a white LED element structure with excellent heat dissipation. However, even if this structure is applied to a deep ultraviolet LED as it is, all of the deep ultraviolet light emitted from the quantum well layer that is incident on the p-type GaN contact layer is absorbed, so that the LEE is 5% or less.
  • the present invention aims to realize a deep WLED device with high WPE and high output by improving efficiency droop and LEE due to heat of the deep UV LED device.
  • a deep ultraviolet LED device having a design wavelength ⁇ (200 nm to 355 nm), which includes a back surface adhesive layer (Au-Au or Au-AuSn), a support substrate (CuMo or CuW), and a bonding layer.
  • n-type wiring electrode Ti/Al/Ti/Au
  • insulating film SiO 2
  • p-type wiring electrode Ti/Au/Ni
  • p-type reflective electrode Ni /Au
  • a p-type GaN contact layer a p-type AlGaN layer, a multiple quantum barrier layer (MQB), a multiple quantum well layer (MQW), an n-type AlGaN layer, an AlN buffer layer, and a protective film (SiO 2 ) in this order.
  • MQB multiple quantum barrier layer
  • MQW multiple quantum well layer
  • the element, and the n-type wiring electrode (Ti/Al/Ti/Au) is extended until it is exposed to the n-type AlGaN layer through the through hole covered and insulated by the insulating film (SiO 2 ).
  • the insulating film SiO 2 .
  • the reflection type two-dimensional photonic crystal having a plurality of holes provided therein, wherein the reflection type two-dimensional photonic crystal periodic structure has a photonic band gap opened to a TE polarization component,
  • the ratio of the deep ultraviolet LED element satisfies a ratio of 0.3 ⁇ R/a ⁇ 0.4, and the deep ultraviolet LED element is surface-mounted and has an inorganic paint coating film having a reflectance of 91% or more.
  • a deep ultraviolet LED comprising: an aluminum nitride ceramic package having an inner side wall angle of 60 degrees or more and 75 degrees or less; and a quartz window provided on the outermost surface of the aluminum nitride ceramic package to seal the deep ultraviolet LED element. Provide the device.
  • a deep ultraviolet LED device having a design wavelength ⁇ (200 nm to 355 nm), which includes a back surface adhesive layer (Au-Au or Au-AuSn), a support substrate (CuMo or CuW), and a bonding layer.
  • n-type wiring electrode Ti/Al/Ti/Au
  • insulating film SiO 2
  • p-type wiring electrode Ti/Au/Ni
  • p-type reflective electrode Ni /Au
  • a p-type GaN contact layer a p-type AlGaN layer, a multiple quantum barrier layer (MQB), a multiple quantum well layer (MQW), an n-type AlGaN layer, an AlN buffer layer, and a protective film (SiO 2 ) in this order.
  • MQB multiple quantum barrier layer
  • MQW multiple quantum well layer
  • the element, and the n-type wiring electrode (Ti/Al/Ti/Au) is extended until it is exposed to the n-type AlGaN layer through a through hole covered and insulated with an insulating film (SiO 2 ).
  • SiO 2 an insulating film
  • the reflection type two-dimensional photonic crystal having a plurality of holes provided therein, wherein the reflection type two-dimensional photonic crystal periodic structure has a photonic band gap opened to a TE polarization component,
  • the ratio satisfies 0.3 ⁇ R/a ⁇ 0.4, and further has a quartz hemispherical lens bonded to the surface of the protective film (SiO 2 ) and transparent to the wavelength ⁇ , and the diameter of the hemispherical lens.
  • a deep ultraviolet LED element having a diameter equal to or larger than the diameter of an inscribed circle in the surface of the protective film (SiO 2 ), and an inorganic paint coating film having the reflectance of 91% or more on which the deep ultraviolet LED element is surface-mounted.
  • an aluminum nitride ceramic package having an inner side wall angle of 60 degrees or more and 75 degrees or less, and a quartz window provided on the outermost surface of the aluminum nitride ceramic package for sealing the deep ultraviolet LED element.
  • a deep ultraviolet LED device Provided is a deep ultraviolet LED device.
  • a deep ultraviolet LED device having a design wavelength ⁇ (200 nm to 355 nm), which includes a back surface adhesive layer (Au-Au or Au-AuSn), a support substrate (CuMo or CuW), and a bonding layer.
  • n-type wiring electrode Ti/Al/Ti/Au
  • insulating film SiO 2
  • p-type wiring electrode Ti/Au/Ni
  • p-type reflective electrode Ni /Au
  • a p-type GaN contact layer a p-type AlGaN layer
  • a multiple quantum barrier layer MQB
  • MQW multiple quantum well layer
  • SiO 2 protective film
  • the n-type wiring electrode Ti/Al/Ti/Au
  • Ti/Al/Ti/Au is extended until it is exposed to the n-type AlGaN layer through a through hole covered and insulated with an insulating film (SiO 2 ), and A plurality of p-type reflective electrodes (Ni/Au) provided within the thickness direction of the p-type GaN contact layer and at a position not exceeding the interface between the p-type GaN contact layer and the p-type AlGaN layer.
  • the reflection type two-dimensional photonic crystal periodic structure has a photonic band gap opened to the TE polarization component
  • the period a of the periodic structure of the reflective two-dimensional photonic crystal satisfies the Bragg condition
  • the Bragg conditional expression m ⁇ /n eff 2a (where m: order, ⁇ : design wavelength, n eff).
  • a deep ultraviolet LED device having a design wavelength ⁇ (200 nm to 355 nm), which includes a back surface adhesive layer (Au-Au or Au-AuSn), a support substrate (CuMo or CuW), and a bonding layer.
  • n-type wiring electrode Ti/Al/Ti/Au
  • insulating film SiO 2
  • p-type wiring electrode Ti/Au/Ni
  • p-type reflective electrode Ni /Au
  • a p-type GaN contact layer a p-type AlGaN layer
  • a multiple quantum barrier layer MQB
  • MQW multiple quantum well layer
  • SiO 2 protective film
  • the n-type wiring electrode Ti/Al/Ti/Au
  • Ti/Al/Ti/Au is extended until it is exposed to the n-type AlGaN layer through a through hole covered and insulated with an insulating film (SiO 2 ), and A plurality of p-type reflective electrodes (Ni/Au) provided within the thickness direction of the p-type GaN contact layer and at a position not exceeding the interface between the p-type GaN contact layer and the p-type AlGaN layer.
  • the reflection type two-dimensional photonic crystal periodic structure has a photonic band gap opened to the TE polarization component
  • the period a of the periodic structure of the reflective two-dimensional photonic crystal satisfies the Bragg condition
  • the Bragg conditional expression m ⁇ /n eff 2a (where m: order, ⁇ : design wavelength, n eff).
  • a quartz hemispherical lens that satisfies 3 ⁇ R/a ⁇ 0.4 and is transparent to the wavelength ⁇ that is bonded to the surface of the protective film (SiO 2 ) is provided.
  • Deep-ultraviolet which has an aluminum nitride ceramic package having an inner side wall angle of 60 degrees or more and 75 degrees or less, and a quartz window provided on the outermost surface of the aluminum nitride ceramic package for sealing the deep-ultraviolet LED element.
  • An LED device is provided.
  • a step of stacking a multi-quantum well layer (MQW), a multi-quantum barrier layer (MQB), a p-type AlGaN layer and a p-type GaN contact layer, and preparing a mold for forming a reflective two-dimensional photonic crystal A step of spin-coating a two-layer resist layer on the p-type GaN contact layer and transferring the structure of the mold by a nanoimprint method, and a p-type GaN contact using the resist layer to which the structure is transferred as a mask Layer to a position not exceeding the interface of the p-type AlGaN layer, and then washing to form a reflective two-dimensional photonic crystal; and, after forming the reflective two-dimensional photonic crystal, p-type reflection
  • a step of forming electrodes (Ni/Au) by oblique vapor deposition in this order, and a p-type reflective electrode (Ni/Au) pattern are formed by a lift-off process, and then the p-type
  • a step of forming an insulating film (SiO 2 ) film after forming an insulating film (SiO 2 ) forming pattern by a photolithography process and a lift-off process for forming the insulating film (SiO 2 ) pattern into a p-type reflective electrode ( Ni/Au) pattern is formed at the same height, and a p-type wiring electrode (Ti/Au/Ni) forming pattern is formed by a photolithography process, and then the p-type wiring electrode (Ti/Au/Ni) is formed.
  • a step of forming a film in this order a step of forming a p-type wiring electrode (Ti/Au/Ni) pattern in a lift-off step, a step of forming an insulating film (SiO 2 ), and an n-type electrode (
  • a step of forming a pattern for forming a through hole a step of forming a through hole by ICP etching to a position beyond the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer, and forming an insulating film (SiO 2 ).
  • a step of opening a window of the insulating film (SiO 2 ) by BHF and a p-type pad electrode (Ti/Au) are vapor-deposited in this order, and then the resist is removed by a lift-off step to remove the p-type pad electrode (Ti /Au) pattern formation step, a protective film (SiO 2 ) formation step, and a photolithography step to expose the p-type pad electrode (Ti/Au) covered with the protective film (SiO 2 ).
  • Pattern forming step a step of opening a protective film (SiO 2 ) window with BHF, and a lift-off step after forming a p-type pad electrode (Ti/Au) pattern, then the back surface of the support substrate (CuMo or CuW)
  • An inorganic coating material having a reflectance of 91% or more for the step of vapor-depositing a back surface adhesive layer (Au or AuSn) on the substrate, the step of dividing the supporting substrate into elements, and the divided back surface adhesive layer (Au or AuSn) on the back surface of the element.
  • a quartz window is metal-sealed on the upper surface of the aluminum nitride ceramic package.
  • a method for manufacturing a deep ultraviolet LED device which comprises steps.
  • a step of stacking a multi-quantum well layer (MQW), a multi-quantum barrier layer (MQB), a p-type AlGaN layer and a p-type GaN contact layer, and preparing a mold for forming a reflective two-dimensional photonic crystal A step of spin-coating a two-layer resist layer on the p-type GaN contact layer and transferring the structure of the mold by a nanoimprint method, and a p-type GaN contact using the resist layer to which the structure is transferred as a mask
  • a step of processing after forming the insulating film (SiO 2) forming patterns by photolithography, a step of forming an insulating film (SiO 2), insulated by a lift-off process (SiO 2) film pattern p-type reflective electrode
  • the p-type wiring electrode (Ti/Au/Ni) forming pattern is formed by the step of forming the (Ni/Au) patterns at the same height and the photolithography step, the p-type wiring electrode (Ti/Au/Ni) is formed.
  • a step of forming a p-type wiring electrode (Ti/Au/Ni) pattern in a lift-off step, a step of forming an insulating film (SiO 2 ), and an n-type electrode by a photolithography step A step of forming a (through hole) forming pattern, a step of forming a through hole by ICP etching to a position beyond the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer, and an insulating film (SiO 2 ) are formed.
  • MQW multiple quantum well layer
  • SiO 2 insulating film
  • a step of forming a film a step of removing the insulating film (SiO 2 ) formed on the bottom surface of the through hole by ICP etching, and further digging the n-type AlGaN layer, and an insulating film (SiO 2 formed by the above step).
  • a step of irradiating an excimer laser or a femtosecond laser from the sapphire substrate side to separate the sapphire substrate from the AlN buffer layer laser lift-off: LLO
  • a pattern for device isolation formation of the AlN buffer layer by a photolithography process A step of forming a SiO 2 pattern mask by a lift-off step after forming a SiO 2 film, a step of digging until an insulating film (SiO 2 ) surface is exposed by ICP etching, and a p-type pad electrode forming pattern by a photolithography step.
  • a step of opening a window of the insulating film (SiO 2 ) by BHF and a p-type pad electrode (Ti/Au) are vapor-deposited in this order, and then the resist is removed by a lift-off step to remove the p-type pad electrode (Ti /Au) pattern formation step, a protective film (SiO 2 ) formation step, and a photolithography step to expose the p-type pad electrode (Ti/Au) covered with the protective film (SiO 2 ).
  • Pattern forming step a step of opening a protective film (SiO 2 ) window with BHF, and a lift-off step after forming a p-type pad electrode (Ti/Au) pattern, then the back surface of the support substrate (CuMo or CuW) backside bonding layer (Au or AuSn) on the surface of the depositing, the the steps of the supporting substrate to the element divided, divided AlN buffer layer on the protective film of the element (SiO 2), the protective film (SiO 2 )
  • a method for manufacturing a deep ultraviolet LED device which comprises a step of metal-sealing a quartz window on an upper surface of a minium ceramic package.
  • a step of stacking a multi-quantum well layer (MQW), a multi-quantum barrier layer (MQB), a p-type AlGaN layer and a p-type GaN contact layer, and preparing a mold for forming a reflective two-dimensional photonic crystal A step of spin-coating a two-layer resist layer on the p-type GaN contact layer and transferring the structure of the mold by a nanoimprint method, and a p-type GaN contact using the resist layer to which the structure is transferred as a mask
  • a step of processing after forming the insulating film (SiO 2) forming patterns by photolithography, a step of forming an insulating film (SiO 2), insulated by a lift-off process (SiO 2) film pattern p-type reflective electrode
  • the p-type wiring electrode (Ti/Au/Ni) forming pattern is formed by the step of forming the (Ni/Au) patterns at the same height and the photolithography step, the p-type wiring electrode (Ti/Au/Ni) is formed.
  • a step of forming a p-type wiring electrode (Ti/Au/Ni) pattern in a lift-off step, a step of forming an insulating film (SiO 2 ), and an n-type electrode by a photolithography step A step of forming a (through hole) forming pattern, a step of forming a through hole by ICP etching to a position beyond the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer, and an insulating film (SiO 2 ) are formed.
  • MQW multiple quantum well layer
  • SiO 2 insulating film
  • a step of forming a film a step of removing the insulating film (SiO 2 ) formed on the bottom surface of the through hole by ICP etching, and further digging the n-type AlGaN layer, and an insulating film (SiO 2 formed by the above step).
  • a step of irradiating an excimer laser or a femtosecond laser from the sapphire substrate side to separate the sapphire substrate from the n-type AlGaN layer laser lift-off: LLO
  • a photolithography process for the n-type AlGaN layer to form a device isolation formation pattern.
  • a step of opening a window of the insulating film (SiO 2 ) by BHF, and a p-type pad electrode (Ti/Au) are vapor-deposited in this order, and then the resist is removed by a lift-off step to remove the p-type pad electrode.
  • the step of forming a (Ti/Au) pattern, the step of forming a protective film (SiO 2 ) and the photolithography step expose the p-type pad electrode (Ti/Au) covered with the protective film (SiO 2 ).
  • Pattern forming process a step of opening a protective film (SiO 2 ) window with BHF, and a lift-off process to form a p-type pad electrode (Ti/Au) pattern, and then a supporting substrate (CuMo or CuW) a back surface adhesive layer (Au or AuSn) is deposited on the back surface, a step of dividing the support substrate into elements, and a back surface adhesive layer (Au or AuSn) on the divided element back surface with a reflectance of 91% or more.
  • a quartz window is formed on the upper surface of the aluminum nitride ceramic package.
  • a method for manufacturing a deep ultraviolet LED device which comprises a step of metal sealing.
  • a method of manufacturing a deep ultraviolet LED device having a design wavelength ⁇ (200 nm to 355 nm), which comprises a sapphire substrate as a growth substrate, and an AlN buffer layer and an n-type AlGaN layer in that order.
  • a step of stacking a multi-quantum well layer (MQW), a multi-quantum barrier layer (MQB), a p-type AlGaN layer and a p-type GaN contact layer, and preparing a mold for forming a reflective two-dimensional photonic crystal A step of spin-coating a two-layer resist layer on the p-type GaN contact layer and transferring the structure of the mold by a nanoimprint method, and a p-type GaN contact using the resist layer to which the structure is transferred as a mask Layer to a position not exceeding the interface of the p-type AlGaN layer, and then washing to form a reflective two-dimensional photonic crystal, and forming the reflective two-dimensional photonic crystal, and then p-type reflection
  • a step of forming electrodes (Ni/Au) by oblique vapor deposition in this order, and a p-type reflective electrode (Ni/Au) pattern are formed by a lift-off process, and then the p-type
  • a step of forming an insulating film (SiO 2 ) film after forming an insulating film (SiO 2 ) forming pattern by a photolithography process and a lift-off process for forming the insulating film (SiO 2 ) pattern into a p-type reflective electrode ( Ni/Au) pattern is formed at the same height, and a p-type wiring electrode (Ti/Au/Ni) forming pattern is formed by a photolithography process, and then the p-type wiring electrode (Ti/Au/Ni) is formed.
  • a step of forming a film in this order a step of forming a p-type wiring electrode (Ti/Au/Ni) pattern in a lift-off step, a step of forming an insulating film (SiO 2 ), and an n-type electrode (
  • a step of forming a pattern for forming a through hole a step of forming a through hole by ICP etching to a position beyond the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer, and forming an insulating film (SiO 2 ).
  • the step of forming a (Ti/Au) pattern, the step of forming a protective film (SiO 2 ) and the photolithography step expose the p-type pad electrode (Ti/Au) covered with the protective film (SiO 2 ).
  • Pattern forming process a step of opening a protective film (SiO 2 ) window with BHF, and a lift-off process to form a p-type pad electrode (Ti/Au) pattern, and then a supporting substrate (CuMo or CuW) backside adhesive layer (Au or AuSn) is vapor-deposited, the supporting substrate is divided into elements, and the surface of the protective film (SiO 2 ) on the n-type AlGaN layer of the divided elements is protected.
  • the present specification includes the disclosure content of Japanese Patent Application No. 2018-246710, which is the basis of priority of the present application.
  • the WPE and output of the deep ultraviolet LED device can be improved.
  • FIG. 1 It is a figure which shows the calculation model in the ray tracing method of the deep-ultraviolet LED apparatus of the 1st Embodiment of this invention. It is a calculation model in the FDTD method of a Flip Chip structure deep UV LED device that extracts deep UV light from a sapphire substrate. It is a calculation model in the FDTD method of the deep ultraviolet LED device of the first embodiment of the present invention. In addition, an enlarged view of the vicinity of the n-type wiring electrode is shown. It is a top view of the deep ultraviolet LED device of the 2nd Embodiment of this invention. It is sectional drawing of the deep-UV LED apparatus of the 2nd Embodiment of this invention.
  • FIG. 1A, FIG. 1B, and FIG. 1C are diagrams showing a structure of an AlGaN-based deep ultraviolet LED device having a wavelength of 280 nm as an example of a design wavelength ⁇ as the deep ultraviolet LED device according to the first embodiment of the present invention. ..
  • a quartz window 1 As shown in the vertical LED (AlN buffer layer) cross-sectional view of FIG. 1B, a quartz window 1, an aluminum nitride ceramic package 2 with an inorganic paint coating film 17 having an inner side wall angle ( ⁇ ) 2a thereof, a protection.
  • SiO 2 Film (SiO 2 ) 3, AlN buffer layer 4, n-type AlGaN layer 5, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p-type AlGaN layer/p-type GaN contact layer 7, p-type reflection Electrode (Ni/Au) 8, p-type wiring electrode (Ti/Au/Ni) 9a, p-type pad electrode 9b, insulating film (SiO 2 ) 10, n-type wiring electrode (Ti/Al/Ti/Au) 11a, Bonding layer (Au-Au or Au-AuSn) 12, support substrate (CuMo or CuW) 13, back surface adhesive layer (Au-Au or Au-AuSn) 14, reflective two-dimensional photonic crystal periodic structure 100, holes 101.
  • MQW multiple quantum well layer
  • MQB multiple quantum barrier layer
  • the reflective two-dimensional photonic crystal periodic structure 100 has a p-type AlGaN layer within the range of the p-type reflective electrode (Ni/Au) 8 and the p-type AlGaN layer/p-type GaN contact layer 7. And a p-type GaN contact layer.
  • FIG. 1A is a plan view of the deep ultraviolet LED device viewed from the direction of a quartz window (not shown).
  • Reference numeral 9b is a p-type pad electrode formed on the p-type wiring electrode (Ti/Au/Ni) 9a.
  • 1B is a cross-sectional view taken along the broken line in FIG. 1A.
  • the LED device includes a support substrate (CuMo or CuW) 13, a bonding layer (Au—Au or Au—AuSn) 12, an n-type electrode 11, an insulating film (SiO 2 ) 10, a p-type electrode 9, p-type reflective electrode (Ni/Au) 8, p-type AlGaN layer/p-type GaN contact layer 7, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, n-type AlGaN layer 5, AlN buffer layer 4 Are laminated in this order.
  • the n-type electrode 11 is an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) that contacts the n-type AlGaN layer 5.
  • the n-type electrode (rising portion) 11b includes a p-type wiring electrode (Ti/Au/Ni) 9a, a p-type reflective electrode (Ni/Au) 8, a p-type AlGaN layer/p-type GaN contact layer 7, and a multiple layer.
  • the n-type AlGaN layer 5 is formed in the through hole 10b formed by penetrating the quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6 and via the n-type electrode (protrusion) 11c. Is in electrical contact with.
  • MQW quantum well layer
  • MQB multiple quantum barrier layer
  • the insulating film (SiO 2 ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by an insulating film (SiO 2 ) 10 that is interposed between the n-type wiring electrode 11a and the p-type wiring electrode (Ti/Au/Ni) 9a.
  • the periphery of the n-type electrode (rise portion) 11b is covered with an insulating film (SiO 2 ) 10, and the n-type electrode (rise portion) 11b is a multiple quantum well layer (MQW)/multiple quantum barrier layer ( It is insulated from the MQB) 6, the p-type AlGaN layer/p-type GaN contact layer 7, and the p-type reflective electrode (Ni/Au) 8.
  • MQW multiple quantum well layer
  • It is insulated from the MQB 6
  • the n-type electrode (protruding portion) 11c is in contact with the n-type AlGaN layer 5 without the insulating film (SiO 2 ) 10 interposed therebetween.
  • the n-type electrode (rise portion) 11b projects from the tip of the through hole 10b (n-type electrode (protrusion portion) 11c), but the n-type electrode (rise portion) 11b is exposed from the through hole 10b and n-type AlGaN. It suffices that it is in electrical contact with the layer 5, and does not necessarily have to project from the through hole 10b. As shown in FIG.
  • one deep ultraviolet LED element is one that is in electrical contact with the n-type AlGaN layer 5 (the electrical connection between the n-type electrode (rise portion) 11b and the n-type AlGaN layer 5). Since, for example, a large number of scattered dots are formed, a substantially uniform in-plane current flows vertically from the p-type AlGaN layer/p-type GaN contact layer 7 to the n-type AlGaN layer 5.
  • a conductive substrate as the support substrate 13, it is possible to supply power from the conductive substrate side and to have a structure with excellent heat dissipation.
  • FIG. 1C is a plan view of a reflective two-dimensional photonic crystal periodic structure 100. It has a hole structure in which holes 101(h) having a columnar shape and a circle having a radius R are formed in a triangular lattice pattern with a period a along the XY direction.
  • holes 101(h) having a columnar shape and a circle having a radius R are formed in a triangular lattice pattern with a period a along the XY direction.
  • deep ultraviolet light having a wavelength of 280 nm emitted from the multiple quantum well layer 6 is propagated through the medium while elliptically polarized with TE light and TM light emitted in all directions.
  • PBG photonic band gap
  • FIG. 1B shows the relationship between R/a and the PBG value obtained by the plane wave expansion method in FIG. 1B.
  • the PBG value is a value indicating the size of the gap between the first photonic band ( ⁇ 1TE) and the second photonic band ( ⁇ 2TE), and is the minimum value of the (second photonic band ( ⁇ a/2 ⁇ c)-( It is calculated by the first photonic band (maximum value of ⁇ a/2 ⁇ c)) From this figure, it can be seen that R/a and the PBG value are in a proportional relationship.
  • the parameters necessary for the calculation of the plane wave expansion method are calculated as follows.
  • the filling factor f of the two-dimensional photonic crystal is calculated by the following equation (1).
  • f 2 ⁇ /3 0.5 ⁇ (R/a) 2
  • the effective refractive index n eff of the two-dimensional photonic crystal is calculated by the following formula (2).
  • the LEE due to the reflection effect of the two-dimensional photonic crystal will be obtained by simulation analysis using the FDTD method.
  • the FDTD method converts the Maxwell equation into a difference equation in space and time and directly calculates the electromagnetic field strength, so it is suitable for wave analysis of photonic crystals of nm structure, but cannot directly calculate LEE. ..
  • the ray tracing method tens of thousands of rays are randomly emitted and the number of rays reaching the detector is directly calculated, so that the LEE in the mm structure can be directly obtained.
  • wave analysis of nm structure is not possible. Therefore, in order to obtain LEE due to the reflection effect of the photonic crystal, cross simulation of the FDTD method and the ray tracing method was performed.
  • Table 1 shows the calculation model of the ray tracing method
  • Table 2 shows the calculation model of the FDTD method
  • Table 3 shows each parameter of the calculation model of the reflective two-dimensional photonic crystal.
  • FIG. 1G and Table 6 show calculation models and calculation parameters by the FDTD method.
  • FIG. 2A is a plan view showing the structure of an AlGaN-based deep ultraviolet LED device having a wavelength of 280 nm as an example of the design wavelength ⁇ , as the deep ultraviolet LED device according to the second embodiment of the present invention.
  • 2B is a cross-sectional view showing a cross section taken along a broken line in FIG. 2A.
  • FIG. 2C is a plan view of the reflective two-dimensional photonic crystal periodic structure 100.
  • the quartz window 1 and the aluminum nitride ceramic with the inorganic paint coating film 17 having the inner side wall angle ( ⁇ ) 2a thereof.
  • Package 2 inner side wall angle ( ⁇ ) 2a of aluminum nitride ceramic package, quartz hemispherical lens 31, protective film (SiO 2 ) 3, AlN buffer layer 4, n-type AlGaN layer 5, multiple quantum well layer (MQW)/multiple quantum.
  • Barrier layer (MQB) 6 p-type AlGaN layer/p-type GaN contact layer 7, p-type reflective electrode (Ni/Au) 8, p-type wiring electrode (Ti/Au/Ni) 9a, insulating layer (SiO 2 ) 10 , N-type wiring electrode (Ti/Al/Ti/Au) 11a, n-type electrode (rising portion) 11b, bonding layer (Au-Au or Au-AuSn) 12, support substrate (CuMo or CuW) 13, back surface adhesive layer (Au—Au or Au—AuSn) 14, a reflective two-dimensional photonic crystal periodic structure 100, and holes 101 (h).
  • Reference numeral 9b is a p-type pad electrode formed on the p-type wiring electrode (Ti/Au/Ni) 9a.
  • the LED device includes a support substrate (CuMo or CuW) 13, a bonding layer (Au—Au or Au—AuSn) 12, an n-type electrode 11, an insulating film (SiO 2 ) 10, a p-type electrode 9, p-type reflective electrode (Ni/Au) 8, p-type AlGaN layer/p-type GaN contact layer 7, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, n-type AlGaN layer 5, AlN buffer layer 4 Are laminated in this order.
  • the n-type electrode 11 is an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) that contacts the n-type AlGaN layer 5.
  • the n-type electrode (rise portion) 11b includes a p-type wiring electrode (Ti/Au/Ni) 9a, a p-type reflective electrode (Ni/Au) 8, a p-type AlGaN layer/p-type GaN contact layer 7, and a multiple layer.
  • the n-type AlGaN layer 5 is formed in the through hole 10b formed by penetrating the quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6 and via the n-type electrode (protrusion) 11c. Is in electrical contact with.
  • MQW quantum well layer
  • MQB multiple quantum barrier layer
  • the insulating film (SiO 2 ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by an insulating film (SiO 2 ) 10 that is interposed between the n-type wiring electrode 11a and the p-type wiring electrode (Ti/Au/Ni) 9a.
  • the periphery of the n-type electrode (rise portion) 11b is covered with an insulating film (SiO 2 ) 10, and the n-type electrode (rise portion) 11b is a multiple quantum well layer (MQW)/multiple quantum barrier layer ( It is insulated from the MQB) 6, the p-type AlGaN layer/p-type GaN contact layer 7, and the p-type reflective electrode (Ni/Au) 8.
  • the n-type electrode (protruding portion) 11c is in contact with the n-type AlGaN layer 5 without the insulating film (SiO 2 ) 10 interposed therebetween.
  • the n-type electrode (rise portion) 11b projects from the tip of the through hole 10b (n-type electrode (protrusion portion) 11c), but the n-type electrode (rise portion) 11b is exposed from the through hole 10b and n-type AlGaN. It suffices that it is in electrical contact with the layer 5, and does not necessarily have to project from the through hole 10b.
  • FIG. 2B A sectional view taken along the dotted line in FIG. 2A is the same sectional view as FIG. 2B.
  • one deep-UV LED element has one electrical contact with the n-type AlGaN layer 5 (an electrical connection between the n-type electrode (rise portion) 11b and the n-type AlGaN layer 5). Since, for example, a large number of scattered dots are formed, a substantially uniform in-plane current flows vertically from the p-type AlGaN layer/p-type GaN contact layer 7 to the n-type AlGaN layer 5.
  • Supporting substrate 13 By using a conductive substrate, it is possible to supply electric power from the conductive substrate side and has a structure with excellent heat dissipation.
  • a plan view of the deep ultraviolet LED device viewed from the direction of a quartz window (not shown) and a plan view of the reflective two-dimensional photonic crystal periodic structure 100 are shown in FIG. 2C.
  • the calculation method of LEE in this LED structure is calculated by the FDTD method as in the vertical LED (AlN buffer layer) in the first embodiment.
  • the calculation model and calculation parameters are shown in FIG. 2D and Table 8.
  • FIGS. 3A, 3B, and 3C the structure of an AlGaN-based deep ultraviolet LED device having a wavelength of 280 nm as an example of a design wavelength ⁇ is shown in FIGS. 3A, 3B, and 3C.
  • the reflective two-dimensional photonic crystal periodic structure 100 has a p-type AlGaN layer within the range of the p-type reflective electrode (Ni/Au) 7 and the p-type AlGaN layer/p-type GaN contact layer 6. It is formed at a position not exceeding the interface of the p-type GaN contact layer.
  • the LED element comprises a supporting substrate (CuMo or CuW) 13, a bonding layer (Au—Au or Au—AuSn) 12, an n-type electrode 11, an insulating film (SiO 2 ) 10, a p-type electrode 9, A p-type reflective electrode (Ni/Au) 8, a p-type AlGaN layer/p-type GaN contact layer 7, a multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, and an n-type AlGaN layer 5 are stacked in this order.
  • a supporting substrate CuMo or CuW
  • a bonding layer Au—Au or Au—AuSn
  • n-type electrode 11 an insulating film
  • SiO 2 insulating film
  • SiO 2 insulating film
  • p-type electrode 9 A p-type reflective electrode (Ni/Au) 8
  • a p-type AlGaN layer/p-type GaN contact layer 7 a multiple quantum well layer
  • the n-type electrode 11 is an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) that contacts the n-type AlGaN layer 5. 11c.
  • the n-type electrode (rising portion) 11b includes a p-type wiring electrode (Ti/Au/Ni) 9a, a p-type reflective electrode (Ni/Au) 8, a p-type AlGaN layer/p-type GaN contact layer 7, and a multiple layer.
  • the n-type AlGaN layer 5 is formed in the through hole 10b formed by penetrating the quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6 and via the n-type electrode (protrusion) 11c. Is in electrical contact with.
  • the insulating film (SiO 2 ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by an insulating film (SiO 2 ) 10 that is interposed between the n-type wiring electrode 11a and the p-type wiring electrode (Ti/Au/Ni) 9a.
  • the periphery of the n-type electrode (rise portion) 11b is covered with an insulating film (SiO 2 ) 10, and the n-type electrode (rise portion) 11b is a multiple quantum well layer (MQW)/multiple quantum barrier layer ( It is insulated from the MQB) 6, the p-type AlGaN layer/p-type GaN contact layer 7, and the p-type reflective electrode (Ni/Au) 8.
  • the n-type electrode (protruding portion) 11c is in contact with the n-type AlGaN layer 5 without the insulating film (SiO 2 ) 10 interposed therebetween.
  • the n-type electrode (rise portion) 11b projects from the tip of the through hole 10b (n-type electrode (protrusion portion) 11c), but the n-type electrode (rise portion) 11b is exposed from the through hole 10b and n-type AlGaN. It suffices that it is in electrical contact with the layer 5, and does not necessarily have to project from the through hole 10b.
  • FIG. 3B A cross-sectional view taken along the dotted line in FIG. 3A is the cross-sectional view of FIG. 3B.
  • one deep ultraviolet LED element has one electrical contact with the n-type AlGaN layer 5 (an electrical connection between the n-type electrode (rise portion) 11b and the n-type AlGaN layer 5). Since, for example, a large number of scattered dots are formed, a substantially uniform in-plane current flows vertically from the p-type AlGaN layer/p-type GaN contact layer 7 to the n-type AlGaN layer 5.
  • a conductive substrate as the support substrate 13, it is possible to supply power from the conductive substrate side and to have a structure with excellent heat dissipation.
  • FIG. 3A is a plan view of the deep ultraviolet LED device as seen from the direction of the quartz window (not shown).
  • Reference numeral 9b is a p-type pad electrode formed on the p-type wiring electrode (Ti/Au/Ni) 9a.
  • Reference numeral 11c is an n-type electrode (protruding portion).
  • FIG. 3C is a plan view of the reflective two-dimensional photonic crystal periodic structure 100. It has a hole structure in which holes 101(h) each having a columnar shape and a circle having a radius R are cross-sections are formed in a triangular lattice pattern with a period a along the XY direction.
  • the reflection effect and principle of the photonic crystal are the same as those described in the first embodiment.
  • the LEE calculation method in the LED structure in the present embodiment is calculated by the FDTD method similarly to the vertical LED (AlN buffer layer) in the first embodiment.
  • the calculation model and calculation parameters are shown in FIG. 3D and Table 10.
  • the details of the n-type wiring electrode in FIG. 3D are the same as those in FIG. 1G of the first embodiment, and are not particularly shown.
  • FIGS. 4A to 4C As a deep ultraviolet LED device according to the fourth embodiment of the present invention, the structure of an AlGaN-based deep ultraviolet LED device having a wavelength of 280 nm as an example of a design wavelength ⁇ is shown in FIGS. 4A to 4C.
  • 4A is a plan view
  • FIG. 4B is a sectional view taken along the broken line in FIG. 4A.
  • FIG. 4C is a plan view of the reflective two-dimensional photonic crystal periodic structure 100.
  • a quartz window 1 an aluminum nitride ceramic package 2 with an inorganic paint coating film 17, an inside of an aluminum nitride ceramic package Side wall angle ( ⁇ ) 2a, quartz hemispherical lens 31, protective film (SiO 2 ) 3, n-type AlGaN layer 5, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p-type AlGaN layer/p-type GaN contact layer 7, p-type reflective electrode (Ni/Au) 8, p-type wiring electrode (Ti/Au/Ni) 9a, p-type pad electrode 9b, insulating film (SiO 2 ) 10, n-type wiring electrode (Ti/ Al/Ti/Au) 11a, n-type electrode (rising part) 11b, n-type electrode (protruding
  • the LED element comprises a support substrate (CuMo or CuW) 13, a bonding layer (Au—Au or Au—AuSn) 12, an n-type electrode 11, an insulating film (SiO 2 ) 10, a p-type electrode 9, A p-type reflective electrode (Ni/Au) 8, a p-type AlGaN layer/p-type GaN contact layer 7, a multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, and an n-type AlGaN layer 5 are stacked in this order.
  • a support substrate CuMo or CuW
  • a bonding layer Au—Au or Au—AuSn
  • n-type electrode 11 an insulating film
  • SiO 2 insulating film
  • SiO 2 insulating film
  • p-type electrode 9 A p-type reflective electrode (Ni/Au) 8
  • a p-type AlGaN layer/p-type GaN contact layer 7 a multiple quantum well layer
  • the n-type electrode 11 is an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) that contacts the n-type AlGaN layer 5. 11c.
  • the n-type electrode (rising portion) 11b includes a p-type wiring electrode (Ti/Au/Ni) 9a, a p-type reflective electrode (Ni/Au) 8, a p-type AlGaN layer/p-type GaN contact layer 7, and a multiple layer.
  • the n-type AlGaN layer 5 is formed in the through hole 10b formed by penetrating the quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6 and via the n-type electrode (protrusion) 11c. Is in electrical contact with.
  • the insulating film (SiO 2 ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by an insulating film (SiO 2 ) 10 that is interposed between the n-type wiring electrode 11a and the p-type wiring electrode (Ti/Au/Ni) 9a.
  • the periphery of the n-type electrode (rise portion) 11b is covered with an insulating film (SiO 2 ) 10, and the n-type electrode (rise portion) 11b is a multiple quantum well layer (MQW)/multiple quantum barrier layer ( It is insulated from the MQB) 6, the p-type AlGaN layer/p-type GaN contact layer 7, and the p-type reflective electrode (Ni/Au) 8.
  • the n-type electrode (protruding portion) 11c is in contact with the n-type AlGaN layer 5 without the insulating film (SiO 2 ) 10 interposed therebetween.
  • the n-type electrode (rise portion) 11b projects from the tip of the through hole 10b (n-type electrode (protrusion portion) 11c), but the n-type electrode (rise portion) 11b is exposed from the through hole 10b and n-type AlGaN. It suffices that it is in electrical contact with the layer 5, and does not necessarily have to project from the through hole 11b.
  • FIG. 4B A sectional view taken along the dotted line in FIG. 4A is the sectional view of FIG. 4B.
  • one deep ultraviolet LED element is one that is in electrical contact with the n-type AlGaN layer 5 (the electrical connection between the n-type electrode (rise portion) 11b and the n-type AlGaN layer 5). Since, for example, a large number of scattered dots are formed, a substantially uniform in-plane current flows vertically from the p-type AlGaN layer/p-type GaN contact layer 7 to the n-type AlGaN layer 5.
  • a conductive substrate as the support substrate 13 it is possible to supply power from the conductive substrate side and to have a structure with excellent heat dissipation.
  • FIG. 4C A plan view of the deep ultraviolet LED device viewed from the direction of a quartz window (not shown) and a plan view of the reflective two-dimensional photonic crystal periodic structure 100 are shown in FIG. 4C.
  • the LEE calculation method in this structure is calculated by the FDTD method as in the vertical LED (n-type AlGaN layer) in the third embodiment.
  • the calculation model and calculation parameters are shown in FIG. 4D and Table 12.
  • the specific LEE calculation method is as follows: the output of a vertical LED (n-type AlGaN layer) with a quartz hemispherical lens junction, the output without 2D-PhC, and the quartz hemispherical lens junction vertical with respect to a deep ultraviolet LED basic model (output without 2D-PhC).
  • Type LED n-type AlGaN layer
  • quartz hemispherical lens junction vertical LED n-type AlGaN layer with 2D-PhC (Table 3)
  • Table 14 summarizes the LEE of each structure in the first to fourth embodiments.
  • Drive voltage (V F) 6.5V
  • the driving current (I F) If the value of 350mA is constant, the value of WPE (%) and output (mW) is proportional to the value of light extraction efficiency.
  • a sapphire substrate 21 is used as a growth substrate, and on top of that, an AlN buffer layer 4, an n-type AlGaN layer 5, a multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, a p-type AlGaN layer/p-type GaN.
  • the contact layer 7 is laminated.
  • a two-layer resist was spin-coated on the p-type AlGaN layer/p-type GaN contact layer 7, and the structure of the mold was nanoimprinted. Transcribe.
  • FIG. 5A(b) The p-type AlGaN layer/p-type GaN contact layer 7 is washed after ICP etching using the resist layer to which the above structure is transferred as a mask R1 to form a reflective two-dimensional photonic crystal (hole 101(h)).
  • FIG. 5B(c) A p-type reflective electrode (Ni/Au) forming pattern R2 is formed by a photolithography process on the reflective two-dimensional photonic crystal.
  • Fig. 5B(d) The p-type reflective electrode (Ni/Au) 8 is formed in this order by oblique vapor deposition.
  • Fig. 5C(e) After the p-type reflective electrode (Ni/Au) pattern is formed in the lift-off process, the p-type reflective electrode (Ni/Au) 8 is annealed at a high temperature.
  • An insulating film (SiO 2 ) forming pattern R3 is formed by a photolithography process.
  • Fig. 5D (g) An insulating film (SiO 2 ) 10 is formed.
  • Fig. 5D(h) In the lift-off process, the insulating film (SiO 2 ) pattern 10 is formed between the p-type reflective electrode (Ni/Au) patterns 8 at the same height.
  • FIG. 5E(i) A p-type wiring electrode (Ti/Au/Ni) forming pattern R4 is formed by a photolithography process.
  • Fig. 5E(j) The p-type wiring electrode (Ti/Au/Ni) 9a is formed in this order.
  • Fig. 5F(k) A p-type wiring electrode (Ti/Au/Ni) pattern 9a is formed in the lift-off process.
  • FIG. 5F(l) An insulating film (SiO 2 ) 10x is formed.
  • FIG. 5G(m) An n-type electrode (through hole) forming pattern R5 is formed by a photolithography process.
  • FIG. 5G(n) Through holes 41 are formed by ICP etching to reach a position beyond the interface between the multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6 and the n-type AlGaN layer 5.
  • Fig. 5H(o) An insulating film (SiO 2 ) 10y is formed.
  • Fig. 5H(p) The insulating film (SiO 2 ) formed on the bottom surface of the through hole 41 is removed by ICP etching, and the n-type AlGaN layer 5 is further dug down (formation of the groove 41a).
  • n-type wiring electrode Ti/Al/Ti/Au
  • insulating film (SiO 2 ) 10x formed in the step of FIG. 5H(o) and inside the through hole 41a after the step of FIG. 5H(p).
  • 11x is formed in this order by a vapor deposition method.
  • the target of the film thickness t is t>2h when the depth from the upper part of the insulating film (SiO 2 ) 10 to the deepest part of the n-type AlGaN layer 5 dug in the step of FIG. 5H(p) is h. ..
  • the n-type wiring electrode (Ti/Al/Ti/Au) 11x is annealed at a high temperature.
  • the n-type electrode (rise portion) 11b is extended until it is exposed to the n-type AlGaN layer 5 through the through hole 10b formed in the insulating film (SiO 2 ) 10 and comes into contact with the n-type AlGaN layer 4. It is possible to fabricate a structure in which the cage (covered by the insulating film (SiO 2 ) 10 is insulated) and electrically connected to the n-type wiring electrode (Ti/Al/Ti/Au) 11a.
  • the n-type electrode (rising portion) 11b projects from, for example, the tip of the through hole 10b, and electrically contacts the n-type AlGaN layer 5 at the protruding portion 11c.
  • the n-type wiring electrode (Ti/Al/Ti/Au) 11x is flattened by Polish or CMP.
  • An adhesive layer (Au or AuSn) 14 is deposited on the n-type wiring electrode (Ti/Al/Ti/Au) 11x.
  • a supporting substrate (CuMo or CuW) 13 on which a bonding layer (Au or AuSn) 12 on the supporting substrate 13 side is deposited is prepared.
  • FIG. 5K(u) The supporting substrate side bonding layer (Au or AuSn) 12 of the supporting substrate (CuMo or CuW) 13 is bonded to the adhesive layer (Au or AuSn) 14 in the step of FIG. 5J(s).
  • Fig. 5K(v) Excimer laser or femtosecond laser is irradiated from the sapphire substrate 21 side to separate the sapphire substrate 21 from the AlN buffer layer 4 (laser lift-off: LLO).
  • LLO laser lift-off
  • the element isolation forming pattern R6 is formed by a photolithography process.
  • the SiO 2 pattern mask 51 is formed by a lift-off process.
  • ICP etching is performed until the insulating film (SiO 2 ) 10 surface is exposed.
  • Fig. 5M (z1) A p-type pad electrode forming pattern R7 is formed by a photolithography process. After that, the window of the insulating film (SiO 2 ) 10 is opened (61) with BHF.
  • FIG. 5M (z2) After the p-type pad electrode (Ti/Au) 9b is deposited in this order, the resist is removed in a lift-off process to form the p-type pad electrode (Ti/Au) pattern 9b.
  • FIG. 5N(z3) A protective film (SiO 2 ) 3 is formed.
  • FIG. 5N (z4) A pattern R8 for exposing the p-type pad electrode (Ti/Au) 9b covered with the protective film (SiO 2 ) 10 is formed by a photolithography process.
  • FIG. 5O (z5) A window (71) for the protective film (SiO 2 ) 10 is opened with BHF.
  • the back surface adhesive layer (Au or AuSn) 14 is deposited on the back surface of the support substrate (CuMo or CuW) 13.
  • the support substrate 13 is divided into elements by dicing (not shown).
  • the divided back surface adhesive layer (Au or AuSn) on the back surface of the element is bonded to the n-type electrode of the aluminum nitride ceramic package 2, and the p-type electrode and the p-type pad electrode (Ti/Au) 9b are similarly wired, and then nitrided.
  • the quartz window 1 is metal-sealed on the upper surface of the aluminum ceramic package 2 (see FIG. 1B etc.).
  • FIG. 5A(a) to FIG. 5O(z6) are the same as those in the fifth embodiment, and therefore will not be described again.
  • Fig. 5P (z7) On the surface of the protective film (SiO 2 ) 3 on the AlN buffer layer 4 of the divided element, a quartz hemispherical lens 31 having a diameter equal to or larger than the diameter of the inscribed circle in the protective film (SiO 2 ) and transparent to the wavelength ⁇ 31 Are bonded by the atomic diffusion method or the surface activation method.
  • the quartz window 1 is metal-sealed on the upper surface of 2 (not shown).
  • the sapphire substrate may be irradiated with an excimer laser or a femtosecond laser to separate the sapphire substrate from the n-type AlGaN layer (laser lift-off: LLO).
  • FIGS. 5A(a) to 5O(z6) are the same as those of the seventh embodiment, and therefore will not be described again.
  • Fig. 5P (z7) On the surface of the divided element n-type AlGaN layer on the protective film (SiO 2), a protective film (SiO 2) transparent quartz hemispherical lens 31 with respect to the wavelength ⁇ having the above diameter of the inscribed circle of the plane , Atomic diffusion method or surface activation method.
  • the back surface adhesive layer (Au or AuSn) 14 on the back surface of the element is joined to the n-type electrode of the aluminum nitride ceramic package 2, and the p-type electrode and the p-type pad electrode (Ti/Au) 9b are similarly wired, and then the aluminum nitride ceramic
  • the quartz window 1 is metal-sealed on the upper surface of the package 2 (not shown).
  • the vertical LED structure and the supporting substrate having good thermal conductivity are attached to improve the thermal conductivity (heat dissipation), suppress the efficiency droop due to heat, and suppress the current flow.
  • the injection can be increased to increase the output.
  • a vertical LED (AlN buffer layer) with 2D-PhC is provided for the output without 2D-PhC.
  • the present invention can be used for deep ultraviolet LEDs.
  • Quartz window 2 Aluminum nitride ceramic package with inorganic coating film 3: Protective film (SiO 2 ) 4: AlN buffer layer 5: n-type AlGaN layer 6: multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 7: p-type AlGaN layer/p-type GaN contact layer 8: p-type reflective electrode (Ni/Au) 9: p-type electrode 9a: p-type wiring electrode (Ti/Au/Ni) 9b: p-type pad electrode 10: insulating film (SiO 2 ) 10a: rising part of insulating film (SiO 2 ) 10b: through hole 11: n-type electrode 11a: n-type wiring electrode (Ti/Al/Ti/Au) 11b: n-type electrode (rising part) 11c: n-type electrode (protruding part) 12: Bonding layer (Au-Au or Au-AuSn) 13: Support substrate

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Abstract

Selon la présente invention, afin de réaliser un dispositif de DEL à ultraviolets profonds ayant un WPE élevé et un rendement élevé, l'amélioration du LEE et l'amélioration de la baisse de rendement provoquée par la chaleur du dispositif DEL à ultraviolets profonds sont nécessaires. Ce dispositif de DEL à ultraviolets profonds a une longueur d'onde de conception λ (200-355 nm) et est caractérisé en ce qu'il comporte : un élément de DEL à ultraviolets profonds qui présente, dans l'ordre suivant, une couche adhésive de surface arrière (Au-Au ou Au-AuSn), un substrat de support (CuMo ou CuW), une couche de jonction (Au-Au ou Au-AuSn), une électrode de câblage de type n (Ti/Al/Ti/Au), un film d'isolation (SiO2), une électrode de câblage de type p ( (Ti/Au/Ni), une électrode de réflexion de type p (Ni/Au), une couche de contact de GaN de type p, une couche d'AlGaN de type p, une couche à barrières quantiques multiples (MQB), une couche à puits quantiques multiples (MQW), une couche d'AlGaN de type n, une couche tampon d'AlN, et un film protecteur (SiO2), l'électrode de câblage de type n (Ti/Al/Ti/Au) s'étendant de manière à être exposée à une partie de couche d'AlGaN de type n à travers un trou traversant obtenu en étant revêtu et isolé avec le film d'isolation (SiO2) et ayant un cristal photonique en deux dimensions de type réfléchissant qui a une pluralité de trous disposés à certaines positions dans une plage du sens de l'épaisseur de l'électrode de réflexion de type p (Ni/Au) et de la couche de contact de GaN de type p mais pas au-delà de l'interface entre la couche de contact de GaN de type p et la couche d'AlGaN de type p, une structure de cycle du cristal photonique en deux dimensions de type réfléchissant ayant une largeur de bande interdite ouverte par rapport à un composant de polarisation TE, un cycle a de la structure de cycle du cristal photonique en deux dimensions de type réfléchissant satisfaisant la condition de Bragg par rapport à de la lumière ayant la longueur d'onde de conception λ, un degré m dans l'expression conditionnelle de Bragg mλ/neff = 2 (m représentant un degré, λ représentant la longueur d'onde de conception, neff représentant l'indice de réfaction effectif du cristal photonique en deux dimensions, et a représentant un cycle du cristal photonique en deux dimensions) satisfaisant m = 3, et un rapport R/a satisfaisant 0,3 ≤ R/a ≤ 0,4, où R représente le rayon du trou; un boîtier en céramique en nitrure d'aluminium qui a une surface sur laquelle est monté l'élément de DEL à ultraviolets profonds, qui a un film de revêtement de peinture inorganique ayant un taux de réflexion supérieur ou égal à 91%, et qui a un angle de la paroi côté interne du boîtier égal à 60-75° : et un fenêtre en quartz qui est disposée sur la surface la plus à l'extérieur du boîtier en céramique en nitrure d'aluminium et qui étanchéifie l'élément de DEL à ultraviolets profonds.
PCT/JP2019/050774 2018-12-28 2019-12-25 Dispositif de del à ultraviolets profonds et son procédé de fabrication WO2020138146A1 (fr)

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JP2023076901A (ja) * 2021-11-24 2023-06-05 国立大学法人京都大学 発光ダイオード素子

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