WO2020138021A1 - Sample identification method, device for identifying sample, and sample identification apparatus - Google Patents

Sample identification method, device for identifying sample, and sample identification apparatus Download PDF

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Publication number
WO2020138021A1
WO2020138021A1 PCT/JP2019/050469 JP2019050469W WO2020138021A1 WO 2020138021 A1 WO2020138021 A1 WO 2020138021A1 JP 2019050469 W JP2019050469 W JP 2019050469W WO 2020138021 A1 WO2020138021 A1 WO 2020138021A1
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sample
holes
hole
distance
ion current
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PCT/JP2019/050469
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French (fr)
Japanese (ja)
Inventor
真楠 筒井
彰秀 有馬
正輝 谷口
一道 横田
川合 知二
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国立大学法人大阪大学
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Priority to JP2020563277A priority Critical patent/JP7398118B2/en
Publication of WO2020138021A1 publication Critical patent/WO2020138021A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means

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  • the disclosure in the present specification relates to a sample identification method, a sample identification device, and a sample identification device.
  • a device that forms a through-hole (nanopore) in a substrate and measures an ionic current when a sample passes through the through-hole is attracting attention as a device that can be widely applied to sensing bacteria, viruses, DNA, proteins and the like. ..
  • Non-Patent Document 1 it is possible to identify the volume of a sample by detecting a change in ion current that occurs when the sample passes through pores (micropores) formed on a substrate such as silicon. It is known that the ion current corresponding to the shape of the sample can be measured by making the thickness of the through hole thinner than that of the sample (see Patent Document 1). It is also known to form two or more through holes on a substrate (see Non-Patent Document 2).
  • Non-Patent Document 2 As described in Non-Patent Document 2 above, it is known to form two or more through holes on a substrate as a device for measuring an ion current. Then, as shown in the ABSTRACT diagram of Non-Patent Document 2, in order to improve the sample capturing efficiency per unit time as the number of through holes formed in the substrate increases, the distance between the through holes should be shortened. Is disclosed as desirable.
  • the inventors of the present invention conducted further research using a device in which two or more through holes were formed in the substrate.
  • (1) When identifying the sample to be analyzed, if the distance of the through holes was shortened, the measurement was performed. It is difficult to make a difference in the peak value of the generated ionic current, and as a result, the identification accuracy of the sample decreases, and in particular, it becomes difficult to identify the samples of different sizes.
  • (2) The longer the distance of the through hole, the shorter It was newly found that, contrary to the case, the peak value of the measured ionic current is likely to have a difference and the identification accuracy of the sample is increased.
  • an object of the disclosure in the present specification is to provide a sample identification method, a sample identification device, and a sample identification device that can improve identification accuracy when identifying a sample using a device in which two or more through-holes through which a sample passes are formed in a substrate. , To provide a sample identification device.
  • the disclosure in the present specification relates to a sample identification method, a sample identification device, and a sample identification device described below.
  • a method for identifying a sample in a sample liquid comprising: The identification method is A sample passing step of passing the sample through a through hole formed in the substrate; An ion current measuring step of measuring a change in ion current when the sample passes through the through hole, From the value of the measured ion current, a sample identification step of identifying the sample in the sample liquid, Including at least Two or more through holes are formed in the substrate, and the through holes are arranged such that the distance between adjacent through holes is at least 200 nm or more. Sample identification method. (2) The distance between the adjacent through holes is 1 ⁇ m or more, The sample identification method according to (1) above. (3) The distance between the adjacent through holes is longer than 10 ⁇ m, The sample identification method according to (2) above.
  • the sample liquid contains samples of different sizes, The sample identification method according to any one of (1) to (3) above.
  • a device used for identifying a sample in a sample solution The device is Board, Two or more through holes formed in the substrate, Including, The two or more through holes are arranged such that the distance between adjacent through holes is at least 200 nm or more.
  • Device for sample identification (6)
  • the distance between the adjacent through holes is 1 ⁇ m or more, The sample identification device according to (5) above.
  • the distance between the adjacent through holes is longer than 10 ⁇ m, The sample identification device according to (6) above.
  • the sample identification device according to any one of (5) to (7) above, including: (9) The sample identification device according to (8) above, A first electrode formed in the first chamber; A second electrode formed in the second chamber; An ammeter for measuring an ion current when a sample passes through the through hole, including, Sample identification device.
  • the identification accuracy of the sample is improved, and even samples of different sizes can be identified.
  • FIG. 1 is a schematic view of a device 1a according to the first embodiment
  • FIG. 1A is a top view of the device 1a
  • FIGS. 1B and 1C are cross-sectional views taken along line YY′ of FIG. 1A
  • FIG. 2 is a schematic cross-sectional view of the device 1b according to the second embodiment.
  • FIG. 3 is a schematic cross-sectional view of an embodiment of the identification device 100.
  • FIG. 4 is a flowchart of the sample identification method.
  • 5A to 5E are charts showing the measurement results of the ion current in Example 1 of the sample identification method.
  • 6A to 6E are charts showing the measurement results of the ion current in Example 2 of the sample identification method.
  • FIGS. 10A to 10C are charts showing measurement results of ion current in Example 6 of the sample identification method.
  • the upper part of FIGS. 10A to 10C is a graph showing the change in the base current when measuring the ion current, and the lower part is a graph showing the peak value of the ion current when each sample passes through the through-hole 3 as dots. ..
  • a sample identification method (hereinafter, may be simply referred to as “identification method”)
  • a device for sample identification (hereinafter, may be simply referred to as “device”)
  • a sample identification device (hereinafter, simply referred to as “device”). , May be simply referred to as “identification device”).
  • FIGS. 1A to 1C A device 1a according to the first embodiment will be described with reference to FIGS. 1A to 1C.
  • 1A is a top view of the device 1a
  • FIGS. 1B and 1C are cross-sectional views taken along the line YY′ of FIG. 1A.
  • the device 1a includes at least the substrates 2 and the through holes 3 of two or more.
  • the through hole 3 is formed so as to penetrate the substrate 2 in the direction from the first surface 21 of the substrate 2 to the second surface 22 opposite to the first surface 21.
  • the substrate 2 is not particularly limited as long as it is an insulating material generally used in the field of semiconductor manufacturing technology. For example, Si, Ge, Se, Te, GaAs, GaP, GaN, InSb, InP, SiN, etc. may be mentioned.
  • the substrate 2 is made of a material such as SiN, SiO 2 , HfO 2 or the like, which is a thin film called a solid membrane, or is made of graphene, graphene oxide, molybdenum dioxide (MoS 2 ), boron nitride (BN) or the like. It may be formed into a sheet shape called a two-dimensional material.
  • the substrate 2 forming the through hole 3 be thin.
  • it is preferably 5 ⁇ m or less, more preferably 500 nm or less, further preferably 100 nm or less, particularly preferably 50 nm or less.
  • graphene can be used to manufacture the substrate 2 having a film thickness of 1 nm or less.
  • the film thickness can be made extremely thin. However, if the film thickness of the substrate 2 is very thin, it may be difficult to handle it without damage.
  • the substrate 2 may have a laminated structure in which a solid membrane or a two-dimensional material is laminated on the supporting plate formed of the above-mentioned insulating material.
  • a solid membrane or a two-dimensional material may be laminated on a support plate having holes larger than the through holes 3 and the through holes 3 may be formed in the solid membrane or the two-dimensional material.
  • the through hole 3 is formed so as to penetrate the substrate 2 in the direction from the first surface 21 of the substrate 2 to the second surface 22 which is the surface opposite to the first surface 21.
  • the size of the through hole 3 may be appropriately adjusted so that it is larger than the sample to be measured, but not too large.
  • the size of the through hole 3 means the diameter.
  • the size of the through hole 3 means the diameter of the circumscribed circle of the cross section.
  • the through holes 3 may be formed by etching or the like, as shown in the examples described later. Further, as shown in FIG. 1B, the through hole 3 has the same shape as the first opening 31 of the through hole 3 on the first surface 21 side and the second opening 32 of the through hole 3 on the second surface 22 side. It may be formed in. Alternatively, as shown in FIG. 1C, the sizes of the first opening 31 and the second opening 32 are different, in other words, the through hole 3 extends from the first surface 21 toward the second surface 22 in the base material 2. It may be formed so as to spread.
  • the device 1a has two or more through-holes 3 formed on the substrate 2, but is arranged so that the distance d1 between adjacent through-holes 3 is at least 200 nm or more.
  • the “distance between adjacent through holes” is a line connecting the outer edge of any through hole 3 and the outer edge of any adjacent through hole 3 (FIG. 1A), as shown in FIG. 1A. Means the shortest distance (d') among the dashed lines d'and d'' with an arrow.
  • the “distance between adjacent through holes” is the shortest. It means a distance (d1).
  • the “distance between adjacent through holes” is larger. Means the distance connecting the outer edge of the opening (first opening 31 in FIG. 1C).
  • the distance between adjacent through holes is 200 nm or more, 300 nm or more, 400 nm or more, 600 nm or more, 1 ⁇ m or more, 2 ⁇ m or more, 5 ⁇ m or more, 10 ⁇ m or more, 15 ⁇ m or more, 20 ⁇ m or more, etc., depending on the desired identification accuracy. Adjust it.
  • the upper limit of the distance between adjacent through-holes is not particularly limited from the viewpoint of sample identification, but if the distance is too long, the number of through-holes 3 per unit area of the substrate 2 will decrease and the measurement efficiency will increase. descend. Therefore, it may be set as appropriate in consideration of the area of the substrate 2 and the desired measurement efficiency.
  • the through holes 3 formed on the substrate 2 are arranged such that the distance between the arbitrary through hole 3 and the through hole 3 closest to the through hole 3 is 200 nm or more.
  • the through holes 3 may be arranged at random, or may be arranged so as to have a predetermined shape such as a square shown in FIG. 1A.
  • the through holes may be arranged such that the distances between adjacent through holes are all the same.
  • the sample is not particularly limited as long as it has a volume, and examples thereof include biological substances such as bacteria, cells, viruses, DNA, RNA, proteins, pollen, sulfur oxides (SOx), nitrogen oxides (NOx), Examples thereof include volatile organic compounds (VOC) and oxide minerals (non-biological substances such as silicon, aluminum, titanium and iron).
  • biological substances such as bacteria, cells, viruses, DNA, RNA, proteins, pollen, sulfur oxides (SOx), nitrogen oxides (NOx)
  • SOx sulfur oxides
  • NOx nitrogen oxides
  • VOC volatile organic compounds
  • oxide minerals non-biological substances such as silicon, aluminum, titanium and iron
  • FIG. 2 is a schematic cross-sectional view of the device 1b according to the second embodiment.
  • the device 1b shown in FIG. 2 includes a first chamber member 51 capable of forming a first chamber 5 filled with an electrolytic solution together with a surface of the first surface 21 of the substrate 2 including the first opening 31 of the through hole 3, and a substrate.
  • At least a second chamber member 61 capable of forming the second chamber 6 filled with the electrolytic solution is formed by the second second surface 22 and the surface including the second opening 32 of the through hole 3.
  • the first chamber member 51 and the second chamber member 61 are preferably formed of an electrically and chemically inert material, for example, glass, sapphire, ceramic, resin, rubber, elastomer, SiO 2 , SiN, Al. 2 O 3 and the like.
  • the first chamber 5 and the second chamber 6 are formed so as to sandwich the through hole 3, and the sample introduced into the first chamber 5 can be moved to the second chamber 6 through the through hole 3.
  • the first chamber member 51 and the second chamber member 61 may be separately prepared and bonded to the substrate 2 so as to be liquid-tight.
  • one surface may form a substantially rectangular parallelepiped box member, the substrate 2 may be inserted and fixed in the center of the box, and then the open surface may be liquid-tightly sealed.
  • the first chamber member 51 and the second chamber member 61 do not mean separate members but a part of a box member divided by the substrate 2.
  • holes are formed in the first chamber member 51 and the second chamber member 61 to fill and discharge the electrolyte solution and the sample solution, and to insert electrodes and/or leads as needed. You may.
  • FIG. 3 is a schematic cross-sectional view of an embodiment of the identification device 100.
  • the identification device 100 includes, in addition to the device 1b, a first electrode 52 formed in a portion in contact with the electrolytic solution in the first chamber 5, a second electrode 62 formed in a portion in contact with the electrolytic solution in the second chamber 6, At least an ammeter 7 for measuring the ion current when the samples S1 and S2 pass through the through hole 3 is included.
  • the identification device 100 if necessary, the analysis unit 8 that analyzes the ion current measured by the ammeter 7, the display unit 9 that displays the measured ion current value and/or the result analyzed by the analysis unit 8.
  • a program memory 10 in which a program for causing the analysis unit 8 and the display unit 9 to function is stored in advance, and a control unit 11 for reading and executing the program stored in the program memory 10 may be included.
  • the program may be stored in the program memory 10 in advance, or may be recorded in a recording medium and stored in the program memory 10 using an installation unit.
  • the first electrode 52 and the second electrode 62 can be formed of a known conductive metal such as aluminum, copper, platinum, gold, silver and titanium.
  • the first electrode 52 and the second electrode 62 are formed so as to sandwich the through hole 3, and a DC current is applied to transport the ions in the electrolytic solution. Therefore, the first electrode 52 has only to be formed at a position in contact with the electrolytic solution in the first chamber 5, and may be formed on the surface of the substrate 2, the inner surface of the first chamber member 51, or the space in the first chamber 5. It may be arranged via the lead 53.
  • the second electrode 62 may be formed at a position in contact with the electrolytic solution in the second chamber 6, on the surface of the substrate 2, the inner surface of the second chamber member 61, or the second chamber. It may be arranged in the space in 6 via the lead 63.
  • the first electrode 52 is formed on the inner surface of the first chamber member 51
  • the second electrode 62 is formed on the inner surface of the second chamber member 61.
  • the electrode 62 may be inserted through the holes formed in the first chamber member 51 and the second chamber member 61.
  • the first electrode 52 is connected to the power supply 54 and the earth 55 via the lead 53.
  • the second electrode 62 is connected to the ammeter 7 and the ground 64 via the lead 63.
  • the power supply 54 is connected to the first electrode 52 side and the ammeter 7 is connected to the second electrode 62 side in the example shown in FIG. 3, the power supply 54 and the ammeter 7 may be provided on the same electrode side. Good.
  • the power supply 54 is not particularly limited as long as it can supply a direct current to the first electrode 52 and the second electrode 62.
  • the ammeter 7 is not particularly limited as long as it can measure the ion current generated when the first electrode 52 and the second electrode 62 are energized with time. Although not shown in FIG. 3, a noise removing circuit, a voltage stabilizing circuit, or the like may be provided if necessary.
  • the through holes 3 (openings) adjacent to each other are arranged such that the distance between them is 200 nm or more.
  • the thickness of the substrate 2 (the distance between the first surface 21 and the second surface 22) is preferably thin. Although it depends on the sample concentration (number) in the sample liquid and the number of through holes 3 formed on the substrate 2, the probability that the sample will pass through the through holes 3 at the same time is extremely low. Therefore, even if several samples pass through the through-hole 3 at the same time, they are only recognized as specific peaks and have no effect on identifying what kind of sample is contained in the sample solution. Does not give.
  • the analysis unit 8 analyzes the value (peak value) of the ion current measured by the ammeter 7. As described above, the value of the ionic current changes depending on the size of the sample. Therefore, the sample can be identified by performing data analysis by the analysis unit 8 based on the measured ion current value.
  • the display unit 9 only needs to be able to display the value (peak value) of the measured ion current and the result analyzed by the analysis unit 8, and a known display device such as a liquid crystal display, a plasma display, an organic EL display may be used.
  • FIG. 4 is a flowchart of the sample identification method.
  • the embodiment of the sample identifying method includes a sample passing step (ST1), an ion current measuring step (ST2), and a sample identifying step (ST3).
  • sample passing step (ST1) the sample is passed through the through hole 3 formed in the substrate 2.
  • a sample preparation step may be included before the sample passing step.
  • the sample preparation step can be performed by the following procedure.
  • (1) The first chamber 5 and the second chamber 6 are filled with an electrolytic solution.
  • the electrolyte is not particularly limited as long as the first electrode 52 and the second electrode 62 can be energized, and TE buffer, PBS buffer, HEPES buffer, KCl aqueous solution or the like may be used.
  • TE buffer, PBS buffer, HEPES buffer, KCl aqueous solution or the like may be used.
  • a liquid junction is established between the inside of the first chamber 5 and the inside of the second chamber 6 via the through hole 3.
  • the electrolytic solution containing the sample may be filled in the first or second chamber.
  • the sample passing step (ST1) can be performed by energizing the first electrode 52 and the second electrode 62 arranged in the first chamber 5 and the second chamber 6 filled with the electrolytic solution in the preparation step. Samples such as bacteria have surface electrification. Therefore, when the first electrode 52 and the second electrode 62 are energized, in addition to normal diffusion, the sample added to the first chamber 5 passes through the through-hole 3 formed in the substrate 2 by electrophoresis, and then enters the second chamber 6. Although moving, the pressure may be applied to the solution in which the sample is dispersed by a pump or the like as necessary, and the sample may pass through the through hole 3 by a water flow.
  • the value of the ion current generated by energization is measured with the ammeter 7 over time.
  • the sample identifying step (ST3) the sample may be identified from the peak value of the ion current measured in the ion current measuring step (ST2). Specifically, the size of the sample can be identified by the degree of decrease in the measured value of the ionic current.
  • a silicon wafer (E&M CO., LTD) with a plane orientation (100) having a silicon nitride film of 50 nm on both surfaces was cut into 25 mm squares.
  • a 500 ⁇ m square in which holes are formed by an RIE device (RIE-10NR, SAMCO CO., Ltd.) is covered with an etching prevention metal mask in which holes of approximately 500 ⁇ m square are formed on one surface of the substrate.
  • the silicon nitride film was removed only in the area (1) to expose the silicon surface. After that, only the exposed portion of the silicon is selectively exposed to a hot plate (Hot plate NINOS ND-1, As One CO., Ltd.) at 125° C.
  • Hot plate NINOS ND-1 As One CO., Ltd.
  • the pattern of the through holes 3 was drawn by an electron beam drawing method at approximately the center of the silicon nitride film covering the above-described about 150 ⁇ m square silicon holes. Then, it was immersed in an image solution for development, and reactive etching was performed by an RIE apparatus to form a cylindrical through hole 3 in the silicon nitride film.
  • the device was produced by combining various embodiments such that the number of through holes 3 was 1 to 7, the diameter was 300 nm to 3.4 ⁇ m, and the distance between adjacent through holes was 30 nm to 10 ⁇ m. The length of the through hole 3 was about 50 nm.
  • a polymer block manufactured by TORAY
  • PDMS dimethylpolysiloxane
  • the first chamber 5 and the second chamber 6 were produced.
  • the volumes of the first chamber 5 and the second chamber 6 were each about 10 ⁇ l.
  • a silver-silver chloride electrode was used for the first electrode 52 and the second electrode 62, and the electrodes were inserted into the first chamber 5 and the second chamber 6 through the holes provided in the polymer block.
  • a battery-driven bias power source (Axis Net) was used as the power source 54, and was connected to the first electrode 52 via a lead.
  • the ammeter 7 uses a current amplifier and a digitizer (NI 5922, National Instruments) having a high time resolution of 1 MHz to acquire data, and the acquired data is a RAID drive HDD (HDD-8263, National Instruments Co.). Stored in.
  • sample identification method Preparation of sample solution
  • carboxy group-modified polystyrene particles Reagent Microspheres manufactured by Thermo Scientific
  • TE buffer TE (pH 8.0) manufactured by Nippon Gene Co., Ltd.
  • a sample liquid was prepared by suspending 1 ⁇ l of the liquid.
  • the second chamber 6 of the produced identification device was filled with an electrolytic solution (TE buffer: TE (pH 8.0) manufactured by Nippon Gene Co., Ltd.). Next, the above 1.
  • the sample liquid prepared in step 1 was added to the first chamber 5, a voltage of 800 mV was applied to the first electrode 52 and the second electrode 62, and the ion current I ion was measured.
  • 5A to 5E are charts showing measurement results of ion current.
  • the location where the ionic current value is significantly reduced indicates that the polystyrene particles have passed through the through holes 3.
  • 5B to 5D use a device in which four through holes 3 having a diameter of 1.2 ⁇ m are arranged in a substantially square shape, and the distance of the through holes 3 is 100 nm in FIG. 5B and 1 ⁇ m in FIG. 5C. 5D was arranged so as to be 10 ⁇ m.
  • 5A and 5E show an example using a device for comparison, and FIG. 5A shows a through hole having a diameter of 2.4 ⁇ m, which is the same as the size of four through holes having a diameter of 1.2 ⁇ m.
  • One 3 was arranged.
  • FIG. 5E one through hole 3 having a diameter of 1.2 ⁇ m, which is the same as in FIGS. 5B to 5D, is arranged.
  • FIGS. 5B to 5D the shorter the distance between the adjacent through holes 3 is, the smaller the peak value of the ionic current is, although the through holes 3 have the same size.
  • FIGS. 5A and 5B although four through holes 3 are arranged in FIG. 5B, since the distance between adjacent through holes 3 is as short as 100 nm, the peak value of the measured ion current is as shown in FIG. 5B. The value was close to the peak value of the ion current in FIG. 5A in which one through hole 3 having a size obtained by adding the four through holes was formed.
  • FIGS. 5D and 5E although four through holes 3 are arranged in FIG. 5D, since the distance between adjacent through holes 3 is 10 ⁇ m, the measured peak value of the ion current is It was almost the same as the peak value of the ion current in FIG. 5E in which one through hole 3 having the same size was formed.
  • Example 2 of sample identification method Next, an experiment was performed using polystyrene particles having a diameter of 900 nm as a sample and a device in which seven through holes 3 were arranged.
  • 6A to 6E are charts showing measurement results of ion current.
  • FIGS. 6B to 6D seven through holes 3 having a diameter of 1.2 ⁇ m are arranged, and the distances between all the adjacent through holes 3 are 100 nm in FIG. 6B, 1 ⁇ m in FIG. 6C, and 10 ⁇ m in FIG. 6D. So that Further, FIGS. 6A and 6E show an example using a device for comparison, and FIG.
  • FIG. 6A shows one through hole 3 having a diameter of 3.2 ⁇ m, which has the same area as seven through holes having a diameter of 1.2 ⁇ m. I placed it. Further, in FIG. 6E, one through hole 3 having a diameter of 1.2 ⁇ m, which is the same as in FIGS. 6B to 6D, is arranged.
  • the ionic current was measured by the same procedure as in [Example 1 of sample identification method] except the size of the sample and the arrangement of the through holes 3. Also in the following examples, the procedure for measuring the ion current is the same except the arrangement of the sample and the device.
  • Example 3 of sample identification method Next, an experiment was conducted using a device in which polystyrene particles having a diameter of 200 nm were used as a sample, the diameter of the through holes 3 was 300 nm, the number of the through holes 3 was 1 to 7, and the distance between the through holes 3 was 100 nm. I went. 7A to 7E are charts showing measurement results of ion current. As is clear from FIGS. 7A to 7E, the larger the number of through holes 3, the smaller the peak value of the ion current. On the other hand, it was confirmed that the larger the number of through holes 3, the larger the number of peaks per unit time, in other words, the number of samples passing through the through holes 3 per unit time.
  • the number of the through holes 3 formed on the substrate 2 is increased, the peak value of the ion current becomes larger as the distance between the adjacent through holes 3 becomes longer, so that the identification accuracy (measurement sensitivity) is increased. It was clarified that the number of samples passing through the through-hole 3 per unit time increased as the number of the through-holes 3 increased. Therefore, the number and the distance of the through holes 3 formed per unit area may be appropriately adjusted in consideration of the number of the through holes 3 formed and the identification accuracy.
  • Example 4 of sample identification method Next, an experiment was conducted to examine the distance of the through hole 3 in more detail. Polystyrene particles having a diameter of 780 nm are used as a sample, two through holes 3 having a diameter of 1.2 ⁇ m are arranged, and the distances of the through holes 3 are 30 nm (FIG. 8B), 50 nm (FIG. 8C), 100 nm (FIG. 8D), 200 nm. (FIG. 8E), 400 nm (FIG. 8F), 600 nm (FIG. 8G), 1000 nm (FIG. 8H). As a comparison target, an experiment was also performed with a device (FIG.
  • 8A in which one through hole 3 having a diameter of 1.44 ⁇ m was arranged.
  • 8A to 8H are graphs in which the measured values of the ionic current when a plurality of samples pass through the through hole 3 are superimposed, the horizontal axis represents the peak value of the ionic current, and the vertical axis represents the corresponding ionic current. Represents the number of samples showing the peak value of.
  • FIG. 9A is a graph showing the distribution of the peak values of the ion current when the distances of the through holes 3 are all 10 ⁇ m
  • FIG. 9B is a graph showing the distribution of the peak values of the ion current when the distances of the through holes 3 are all 100 nm. Is. As is clear from the graph of FIG.
  • Example 6 of sample identification method Next, using 780 nm polystyrene particles as a sample, the ion current was measured using a device in which two through holes 3 having a diameter of 1.2 ⁇ m were arranged. 10A shows a distance of the through hole 3 of 100 nm, FIG. 10B shows a distance of the through hole 3 of 1 ⁇ m, and FIG. 10C shows a distance of the through hole 3 of 10 ⁇ m.
  • the upper part of FIGS. 10A to 10C shows the base current when the ion current is measured.
  • the lower graph is a graph showing the change in the peak value of the ionic current when each sample passes through the through hole 3, as a dot.
  • the part indicated by the arrow in the upper part represents the part (time) at which the base current changed significantly due to the sample being clogged in the through hole 3.
  • the arrow in the lower row also indicates the location (time) at which the sample is clogged in the through hole 3.
  • FIG. 10A when the distance between the through holes 3 was short, a remarkable change was found in the peak value of the ion current to be detected after the through holes 3 were clogged.
  • FIGS. 10B and 10C the longer the distance of the through hole 3, the smaller the change in the peak value of the ion current after clogging. From the above results, it is clear that as the distance of the through holes 3 is increased, even if any of the through holes 3 is clogged by the sample, the remarkable effect that the measurement result is less affected is exhibited. became.
  • the distance between the through holes 3 and 10 was up to 10 ⁇ m.
  • the method in which the distance between the through holes 3 and 3 is increased it is clear that it is desirable in terms of identification accuracy. Therefore, if necessary, the distance between the through holes 3 may be longer than 10 ⁇ m, for example, 11 ⁇ m or more, 12 ⁇ m or more, 13 ⁇ m or more, 14 ⁇ m or more.
  • the identification accuracy of the sample is improved, and even samples of different sizes can be identified. Therefore, it is useful for the development of analytical devices in the analytical instrument industry.

Abstract

The purpose of the present invention is to provide a sample identification method, a device for identifying a sample, and a sample identification apparatus that improve identification accuracy when a sample is identified using a device in which two or more through-holes through which the sample passes are formed in a substrate. The problem can be solved by a method, which identifies a sample (S1, S2) in a sample liquid, and comprises at least: a sample passing step of causing the sample to pass through a through-hole (3) formed in a substrate (2); an ion current measuring step of measuring a change in an ion current when the sample passes through the through-hole; and a sample identification step of identifying the sample in the sample liquid from the measured value of the ion current, wherein two or more through-holes are formed in the substrate, and the through-holes are arranged such that the distance between the adjacent through-holes is at least 200 nm or more.

Description

サンプル識別方法、サンプル識別用デバイス、および、サンプル識別装置Sample identification method, sample identification device, and sample identification device
 本明細書における開示は、サンプル識別方法、サンプル識別用デバイス、および、サンプル識別装置に関する。 The disclosure in the present specification relates to a sample identification method, a sample identification device, and a sample identification device.
 基板に貫通孔(ナノポア)を形成し、該貫通孔をサンプルが通過する際のイオン電流を測定するデバイスは、細菌、ウイルス、DNA、タンパク質等のセンシングに幅広く応用可能なデバイスとして注目されている。 BACKGROUND ART A device that forms a through-hole (nanopore) in a substrate and measures an ionic current when a sample passes through the through-hole is attracting attention as a device that can be widely applied to sensing bacteria, viruses, DNA, proteins and the like. ..
 関連する技術としては、例えば、シリコン等の基板上に形成した細孔(マイクロポア)をサンプルが通過する際に生じるイオン電流の変化を検出することで、サンプルの体積を識別できること(非特許文献1参照)、また、貫通孔の厚さをサンプルより薄くすることで、サンプルの形状に応じたイオン電流を測定できること(特許文献1参照)が知られている。また、基板上に貫通孔を2以上形成することも知られている(非特許文献2参照)。 As a related technique, for example, it is possible to identify the volume of a sample by detecting a change in ion current that occurs when the sample passes through pores (micropores) formed on a substrate such as silicon (Non-Patent Document 1). It is known that the ion current corresponding to the shape of the sample can be measured by making the thickness of the through hole thinner than that of the sample (see Patent Document 1). It is also known to form two or more through holes on a substrate (see Non-Patent Document 2).
特開2015-39365号公報JP, 2015-39365, A
 上記非特許文献2に記載のとおり、イオン電流を測定するデバイスとして、基板上に貫通孔を2以上形成することは知られている。そして、非特許文献2のABSTRACTの図に示されるように、基板に形成する貫通孔の数が多くなるほど、単位時間当たりのサンプル捕捉効率を向上させるためには、貫通孔の距離を短くした方が望ましいことが開示されている。 As described in Non-Patent Document 2 above, it is known to form two or more through holes on a substrate as a device for measuring an ion current. Then, as shown in the ABSTRACT diagram of Non-Patent Document 2, in order to improve the sample capturing efficiency per unit time as the number of through holes formed in the substrate increases, the distance between the through holes should be shortened. Is disclosed as desirable.
 しかしながら、本発明者らは、基板に貫通孔を2以上形成したデバイスを用いて更なる研究を行ったところ、(1)分析対象サンプルの識別を行う場合、貫通孔の距離を短くすると、測定したイオン電流のピーク値に差が出にくくなり、その結果、サンプルの識別精度が低下し、特に、異なるサイズのサンプルの識別が困難になること、(2)貫通孔の距離を長くすると、短くした場合とは逆に測定したイオン電流のピーク値に差が出やすくなり、サンプルの識別精度が高くなること、を新たに見出した。 However, the inventors of the present invention conducted further research using a device in which two or more through holes were formed in the substrate. (1) When identifying the sample to be analyzed, if the distance of the through holes was shortened, the measurement was performed. It is difficult to make a difference in the peak value of the generated ionic current, and as a result, the identification accuracy of the sample decreases, and in particular, it becomes difficult to identify the samples of different sizes. (2) The longer the distance of the through hole, the shorter It was newly found that, contrary to the case, the peak value of the measured ionic current is likely to have a difference and the identification accuracy of the sample is increased.
 すなわち、本明細書における開示の目的は、基板にサンプルが通過する貫通孔を2以上形成したデバイスを用いたサンプルの識別の際に、識別精度を向上できるサンプル識別方法、サンプル識別用デバイス、および、サンプル識別装置を提供することである。 That is, an object of the disclosure in the present specification is to provide a sample identification method, a sample identification device, and a sample identification device that can improve identification accuracy when identifying a sample using a device in which two or more through-holes through which a sample passes are formed in a substrate. , To provide a sample identification device.
 本明細書における開示は、以下に示す、サンプル識別方法、サンプル識別用デバイス、および、サンプル識別装置に関する。 The disclosure in the present specification relates to a sample identification method, a sample identification device, and a sample identification device described below.
(1)サンプル液中のサンプルの識別方法であって、
 該識別方法は、
  前記サンプルを、基板に形成した貫通孔を通過させるサンプル通過工程と、
  前記サンプルが、前記貫通孔を通過する時のイオン電流の変化を測定するイオン電流測定工程と、
  測定したイオン電流の値から、前記サンプル液中のサンプルを識別するサンプル識別工程と、
を少なくとも含み、
 前記基板には2以上の貫通孔が形成され、隣り合う貫通孔同士の距離が少なくとも200nm以上離れるように配置されている、
サンプル識別方法。
(2)前記隣り合う貫通孔同士の距離が、1μm以上である、
上記(1)に記載のサンプル識別方法。
(3)前記隣り合う貫通孔同士の距離が、10μmより長い、
上記(2)に記載のサンプル識別方法。
(4)前記サンプル液には、サイズが異なるサンプルが含まれている、
上記(1)~(3)の何れか一つに記載のサンプル識別方法。
(5)サンプル液中のサンプルの識別方法に用いるデバイスであって、
 該デバイスは、
  基板と、
  該基板に形成された2以上の貫通孔と、
を含み、
 前記2以上の貫通孔は、隣り合う貫通孔同士の距離が少なくとも200nm以上離れるように配置されている、
サンプル識別用デバイス。
(6)前記隣り合う貫通孔同士の距離が、1μm以上である、
上記(5)に記載のサンプル識別用デバイス。
(7)前記隣り合う貫通孔同士の距離が、10μmより長い、
上記(6)に記載のサンプル識別用デバイス。
(8)前記基板の第1面側の少なくとも貫通孔を含む面とで電解液を充填する第1チャンバーを形成する第1チャンバー部材と、
 前記基板の第2面側の少なくとも貫通孔を含む面とで電解液を充填する第2チャンバーを形成する第2チャンバー部材と、
を含む、上記(5)~(7)の何れか一つに記載のサンプル識別用デバイス。
(9)上記(8)に記載のサンプル識別用デバイスと、
 前記第1チャンバーに形成された第1電極と、
 前記第2チャンバーに形成された第2電極と、
 サンプルが前記貫通孔を通過する時のイオン電流を計測するための電流計と、
を含む、
サンプル識別装置。
(1) A method for identifying a sample in a sample liquid, comprising:
The identification method is
A sample passing step of passing the sample through a through hole formed in the substrate;
An ion current measuring step of measuring a change in ion current when the sample passes through the through hole,
From the value of the measured ion current, a sample identification step of identifying the sample in the sample liquid,
Including at least
Two or more through holes are formed in the substrate, and the through holes are arranged such that the distance between adjacent through holes is at least 200 nm or more.
Sample identification method.
(2) The distance between the adjacent through holes is 1 μm or more,
The sample identification method according to (1) above.
(3) The distance between the adjacent through holes is longer than 10 μm,
The sample identification method according to (2) above.
(4) The sample liquid contains samples of different sizes,
The sample identification method according to any one of (1) to (3) above.
(5) A device used for identifying a sample in a sample solution,
The device is
Board,
Two or more through holes formed in the substrate,
Including,
The two or more through holes are arranged such that the distance between adjacent through holes is at least 200 nm or more.
Device for sample identification.
(6) The distance between the adjacent through holes is 1 μm or more,
The sample identification device according to (5) above.
(7) The distance between the adjacent through holes is longer than 10 μm,
The sample identification device according to (6) above.
(8) A first chamber member that forms a first chamber filled with an electrolytic solution by a surface including at least a through hole on the first surface side of the substrate,
A second chamber member that forms a second chamber filled with an electrolytic solution by at least the surface including the through hole on the second surface side of the substrate;
The sample identification device according to any one of (5) to (7) above, including:
(9) The sample identification device according to (8) above,
A first electrode formed in the first chamber;
A second electrode formed in the second chamber;
An ammeter for measuring an ion current when a sample passes through the through hole,
including,
Sample identification device.
 本発明で開示するサンプル識別用デバイスを用いてサンプル識別方法を実施すると、サンプルの識別精度が向上し、サイズの異なるサンプルであっても識別ができる。 By implementing the sample identification method using the device for sample identification disclosed in the present invention, the identification accuracy of the sample is improved, and even samples of different sizes can be identified.
図1は第1の実施形態に係るデバイス1aの概略を示す図で、図1Aはデバイス1aの上面図、図1Bおよび図1Cは図1AのY-Y’断面図である。FIG. 1 is a schematic view of a device 1a according to the first embodiment, FIG. 1A is a top view of the device 1a, and FIGS. 1B and 1C are cross-sectional views taken along line YY′ of FIG. 1A. 図2は、第2の実施形態に係るデバイス1bの概略断面図である。FIG. 2 is a schematic cross-sectional view of the device 1b according to the second embodiment. 図3は、識別装置100の実施形態の概略断面図である。FIG. 3 is a schematic cross-sectional view of an embodiment of the identification device 100. 図4は、サンプル識別方法のフローチャートである。FIG. 4 is a flowchart of the sample identification method. 図5A~図5Eは、サンプルの識別方法の実施例1におけるイオン電流の測定結果を示すチャートである。5A to 5E are charts showing the measurement results of the ion current in Example 1 of the sample identification method. 図6A~図6Eは、サンプルの識別方法の実施例2におけるイオン電流の測定結果を示すチャートである。6A to 6E are charts showing the measurement results of the ion current in Example 2 of the sample identification method. 図7A~図7Eは、サンプルの識別方法の実施例3におけるイオン電流の測定結果を示すチャートである。7A to 7E are charts showing the measurement results of the ion current in Example 3 of the sample identifying method. 図8A~図8Hは、サンプルの識別方法の実施例4におけるイオン電流の測定結果を示すチャートである。8A to 8H are charts showing measurement results of ion currents in Example 4 of the sample identifying method. 図9A及び図9Bは、サンプルの識別方法の実施例5におけるイオン電流の測定結果を示すチャートである。9A and 9B are charts showing measurement results of ion currents in Example 5 of the sample identification method. 図10A~図10Cは、サンプルの識別方法の実施例6におけるイオン電流の測定結果を示すチャートである。図10A~図10Cの上段はイオン電流の測定の際のベース電流の変化を示すグラフ、下段は個々のサンプルが貫通孔3を通過する際のイオン電流のピーク値をドットとして示したグラフである。10A to 10C are charts showing measurement results of ion current in Example 6 of the sample identification method. The upper part of FIGS. 10A to 10C is a graph showing the change in the base current when measuring the ion current, and the lower part is a graph showing the peak value of the ion current when each sample passes through the through-hole 3 as dots. ..
 以下に、サンプル識別方法(以下、単に「識別方法」と記載することがある。)、サンプル識別用デバイス(以下、単に「デバイス」と記載することがある。)、および、サンプル識別装置(以下、単に「識別装置」と記載することがある。)について詳しく説明する。 Hereinafter, a sample identification method (hereinafter, may be simply referred to as “identification method”), a device for sample identification (hereinafter, may be simply referred to as “device”), and a sample identification device (hereinafter, simply referred to as “device”). , May be simply referred to as “identification device”).
(デバイスの第1の実施形態)
 図1A~図1Cを参照して、第1の実施形態に係るデバイス1aについて説明する。図1Aはデバイス1aの上面図、図1Bおよび図1Cは図1AのY-Y’断面図である。デバイス1aは、基板2、2以上の貫通孔3を少なくとも含む。貫通孔3は、基板2の第1面21から、該第1面21の反対側の面である第2面22の方向に、基板2を貫通するように形成されている。
(First Embodiment of Device)
A device 1a according to the first embodiment will be described with reference to FIGS. 1A to 1C. 1A is a top view of the device 1a, and FIGS. 1B and 1C are cross-sectional views taken along the line YY′ of FIG. 1A. The device 1a includes at least the substrates 2 and the through holes 3 of two or more. The through hole 3 is formed so as to penetrate the substrate 2 in the direction from the first surface 21 of the substrate 2 to the second surface 22 opposite to the first surface 21.
 基板2は、半導体製造技術の分野で一般的に用いられている絶縁性の材料であれば特に制限は無い。例えば、Si、Ge、Se、Te、GaAs、GaP、GaN、InSb、InP、SiN等が挙げられる。また、基板2は、SiN、SiO2、HfO2等の材料を用い、固体メンブレンと呼ばれる薄膜状、または、グラフェン、酸化グラフェン、二酸化モリブデン(MoS2)、窒化ホウ素(BN)等の材料を用い、2次元材料と呼ばれるシート状に形成してもよい。サンプルの検出感度は、貫通孔3の体積が小さいほど高くなることから、貫通孔3を形成する基板2は薄い方が好ましい。例えば、5μm以下が好ましく、500nm以下がより好ましく、100nm以下がさらに好ましく、50nm以下が特に好ましい。なお、例えば、グラフェンは1nm以下の膜厚の基板2の作製が可能である等、基板2として固体メンブレンまたは2次元材料を用いた場合は、膜厚を非常に薄くできる。しかしながら、基板2の膜厚が非常に薄いと、破損せずに取り扱うことが困難な場合がある。そのため、基板2は、上記の絶縁性の材料で形成した支持板の上に固体メンブレンまたは2次元材料を積層した積層構造としてもよい。積層構造にする場合は、貫通孔3より大きな孔を形成した支持板の上に固体メンブレンまたは2次元材料を積層し、固体メンブレンまたは2次元材料に貫通孔3を形成すればよい。 The substrate 2 is not particularly limited as long as it is an insulating material generally used in the field of semiconductor manufacturing technology. For example, Si, Ge, Se, Te, GaAs, GaP, GaN, InSb, InP, SiN, etc. may be mentioned. The substrate 2 is made of a material such as SiN, SiO 2 , HfO 2 or the like, which is a thin film called a solid membrane, or is made of graphene, graphene oxide, molybdenum dioxide (MoS 2 ), boron nitride (BN) or the like. It may be formed into a sheet shape called a two-dimensional material. Since the sample detection sensitivity increases as the volume of the through hole 3 decreases, it is preferable that the substrate 2 forming the through hole 3 be thin. For example, it is preferably 5 μm or less, more preferably 500 nm or less, further preferably 100 nm or less, particularly preferably 50 nm or less. Note that, for example, graphene can be used to manufacture the substrate 2 having a film thickness of 1 nm or less. When a solid membrane or a two-dimensional material is used as the substrate 2, the film thickness can be made extremely thin. However, if the film thickness of the substrate 2 is very thin, it may be difficult to handle it without damage. Therefore, the substrate 2 may have a laminated structure in which a solid membrane or a two-dimensional material is laminated on the supporting plate formed of the above-mentioned insulating material. In the case of a laminated structure, a solid membrane or a two-dimensional material may be laminated on a support plate having holes larger than the through holes 3 and the through holes 3 may be formed in the solid membrane or the two-dimensional material.
 貫通孔3は、基板2の第1面21から、該第1面21の反対側の面である第2面22の方向に、基板2を貫通するように形成されている。イオン電流を検出する際には、貫通孔3の体積が小さいほど感度が高くなる。したがって、上記基板2を薄くするとともに、貫通孔3の大きさは、測定対象サンプルよりは大きいが、大き過ぎないように適宜調整すればよい。なお、貫通孔3の第1面21と並行となる断面形状が円形の場合、貫通孔3の大きさと記載した場合は直径を意味する。貫通孔3の第1面21と並行となる断面形状が円形でない場合、貫通孔3の大きさとは断面の外接円の直径を意味する。貫通孔3は、後述する実施例に示すとおり、エッチング等により形成すればよい。また、貫通孔3は、図1Bに示すように、第1面21側の貫通孔3の第1開口31と第2面22側の貫通孔3の第2開口32とが同じ形状となるように形成されていてもよい。或いは、図1Cに示すように、第1開口31と第2開口32の大きさが異なる、換言すると、貫通孔3が、基材2の中で第1面21から第2面22に向けて広がるように形成されていてもよい。 The through hole 3 is formed so as to penetrate the substrate 2 in the direction from the first surface 21 of the substrate 2 to the second surface 22 which is the surface opposite to the first surface 21. When detecting the ion current, the smaller the volume of the through hole 3, the higher the sensitivity. Therefore, while making the substrate 2 thin, the size of the through hole 3 may be appropriately adjusted so that it is larger than the sample to be measured, but not too large. When the cross-sectional shape parallel to the first surface 21 of the through hole 3 is circular, the size of the through hole 3 means the diameter. When the cross-sectional shape parallel to the first surface 21 of the through hole 3 is not circular, the size of the through hole 3 means the diameter of the circumscribed circle of the cross section. The through holes 3 may be formed by etching or the like, as shown in the examples described later. Further, as shown in FIG. 1B, the through hole 3 has the same shape as the first opening 31 of the through hole 3 on the first surface 21 side and the second opening 32 of the through hole 3 on the second surface 22 side. It may be formed in. Alternatively, as shown in FIG. 1C, the sizes of the first opening 31 and the second opening 32 are different, in other words, the through hole 3 extends from the first surface 21 toward the second surface 22 in the base material 2. It may be formed so as to spread.
 第1の実施形態に係るデバイス1aは、基板2上に貫通孔3が2以上形成されているが、隣り合う貫通孔3同士の距離d1が少なくとも200nm以上離れるように配置されていることが特徴である。なお、本明細書において「隣り合う貫通孔同士の距離」とは、図1Aに示すとおり、任意の貫通孔3の外縁とその隣の任意の貫通孔3の外縁とを結んだ線(図1Aの矢印付の破線d’、d’’)の中で、最も短い距離(d’)を意味する。また、隣り合う貫通孔3が複数あり、貫通孔3の外縁と外縁とを結んだ距離が異なる場合(図1Aのd1、d2)は、「隣り合う貫通孔同士の距離」とは、最も短い距離(d1)を意味する。ただし、図1Cに示すように、第1面21の第1開口31と第2面22の第2開口32の大きさが異なる場合は、「隣り合う貫通孔同士の距離」とは、大きい方の開口(図1Cでは第1開口31)の外縁とを結んだ距離を意味する。後述する実施例および比較例に示すとおり、貫通孔3(開口)の距離を短くすると、測定したイオン電流のピーク値が低くなるためサンプルの識別がし難くなる。そのため、隣り合う貫通孔同士の距離は、200nm以上、300nm以上、400nm以上、600nm以上、1μm以上、2μm以上、5μm以上、10μm以上、15μm以上、20μm以上等、所望の識別精度に応じて適宜調整すればよい。一方、隣り合う貫通孔同士の距離の上限は、サンプルの識別との観点では特に上限はないが、距離が長くなりすぎると、基板2の単位面積当たりの貫通孔3が少なくなり、測定効率が低下する。したがって、基板2の面積や所望の測定効率等を考慮して、適宜設定すればよい。 The device 1a according to the first embodiment has two or more through-holes 3 formed on the substrate 2, but is arranged so that the distance d1 between adjacent through-holes 3 is at least 200 nm or more. Is. In the present specification, the “distance between adjacent through holes” is a line connecting the outer edge of any through hole 3 and the outer edge of any adjacent through hole 3 (FIG. 1A), as shown in FIG. 1A. Means the shortest distance (d') among the dashed lines d'and d'' with an arrow. Moreover, when there are a plurality of adjacent through holes 3 and the distances connecting the outer edges of the through holes 3 are different (d1, d2 in FIG. 1A), the “distance between adjacent through holes” is the shortest. It means a distance (d1). However, as shown in FIG. 1C, when the size of the first opening 31 of the first surface 21 and the size of the second opening 32 of the second surface 22 are different, the “distance between adjacent through holes” is larger. Means the distance connecting the outer edge of the opening (first opening 31 in FIG. 1C). As shown in Examples and Comparative Examples to be described later, when the distance between the through holes 3 (openings) is shortened, the peak value of the measured ionic current becomes low, making it difficult to identify the sample. Therefore, the distance between adjacent through holes is 200 nm or more, 300 nm or more, 400 nm or more, 600 nm or more, 1 μm or more, 2 μm or more, 5 μm or more, 10 μm or more, 15 μm or more, 20 μm or more, etc., depending on the desired identification accuracy. Adjust it. On the other hand, the upper limit of the distance between adjacent through-holes is not particularly limited from the viewpoint of sample identification, but if the distance is too long, the number of through-holes 3 per unit area of the substrate 2 will decrease and the measurement efficiency will increase. descend. Therefore, it may be set as appropriate in consideration of the area of the substrate 2 and the desired measurement efficiency.
 基板2上に形成する貫通孔3の配置形状は、上記のとおり、任意の貫通孔3と当該貫通孔3に最も近接する貫通孔3の距離が200nm以上となるように配置されていれば、特に制限はない。例えば、貫通孔3はランダムに配置してもよいし、図1Aに示す正方形等の所定の形状となるように配置してもよい。或いは、細密充填形状のように、隣り合う貫通孔同士の距離が全て同じとなるように配置してもよい。 As described above, if the through holes 3 formed on the substrate 2 are arranged such that the distance between the arbitrary through hole 3 and the through hole 3 closest to the through hole 3 is 200 nm or more, There is no particular limitation. For example, the through holes 3 may be arranged at random, or may be arranged so as to have a predetermined shape such as a square shown in FIG. 1A. Alternatively, as in the close-packed shape, the through holes may be arranged such that the distances between adjacent through holes are all the same.
 サンプルとしては、体積を有するものであれば特に制限はなく、例えば、細菌、細胞、ウイルス、DNA、RNA、タンパク質、花粉等の生体物質、硫黄酸化物(SOx)、窒素酸化物(NOx)、揮発性有機化合物(VOC)、酸化鉱物(ケイ素、アルミニウム、チタン、鉄等の非生体物質、等が挙げられる。 The sample is not particularly limited as long as it has a volume, and examples thereof include biological substances such as bacteria, cells, viruses, DNA, RNA, proteins, pollen, sulfur oxides (SOx), nitrogen oxides (NOx), Examples thereof include volatile organic compounds (VOC) and oxide minerals (non-biological substances such as silicon, aluminum, titanium and iron).
(デバイスの第2の実施形態)
 図2を参照して、デバイスの第2の実施形態について説明する。図2は、第2の実施形態に係るデバイス1bの概略断面図である。図2に示すデバイス1bは、基板2の第1面21の貫通孔3の第1開口31を含む面とで電解液を充填する第1チャンバー5を形成できる第1チャンバー部材51、および、基板2の第2面22の貫通孔3の第2開口32を含む面とで電解液を充填する第2チャンバー6を形成できる第2チャンバー部材61、を少なくとも含んでいる。
(Second Embodiment of Device)
A second embodiment of the device will be described with reference to FIG. FIG. 2 is a schematic cross-sectional view of the device 1b according to the second embodiment. The device 1b shown in FIG. 2 includes a first chamber member 51 capable of forming a first chamber 5 filled with an electrolytic solution together with a surface of the first surface 21 of the substrate 2 including the first opening 31 of the through hole 3, and a substrate. At least a second chamber member 61 capable of forming the second chamber 6 filled with the electrolytic solution is formed by the second second surface 22 and the surface including the second opening 32 of the through hole 3.
 第1チャンバー部材51及び第2チャンバー部材61は、電気的および化学的に不活性な材料で形成することが好ましく、例えば、ガラス、サファイア、セラミック、樹脂、ゴム、エラストマー、SiO2、SiN、Al23などが挙げられる。 The first chamber member 51 and the second chamber member 61 are preferably formed of an electrically and chemically inert material, for example, glass, sapphire, ceramic, resin, rubber, elastomer, SiO 2 , SiN, Al. 2 O 3 and the like.
 第1チャンバー5及び第2チャンバー6は、貫通孔3を挟むように形成され、第1チャンバー5に投入したサンプルが、貫通孔3を通り第2チャンバー6に移動できるように形成されていれば特に制限はない。例えば、第1チャンバー部材51及び第2チャンバー部材61を別々に作成し、基板2に液密となるように接着すればよい。又は、1つの面が解放状態の略直方体の箱部材を形成し、箱の中央に基板2を挿入・固定し、その後、解放状態の面を液密に封止してもよい。その場合、第1チャンバー部材51及び第2チャンバー部材61は別々の部材を意味するのではなく、基板2を境に分けた箱部材の一部を意味する。なお、図示はしていないが、第1チャンバー部材51及び第2チャンバー部材61には、電解液及びサンプル液を充填・排出、電極及び/又はリードを挿入するための孔を必要に応じて形成してもよい。 The first chamber 5 and the second chamber 6 are formed so as to sandwich the through hole 3, and the sample introduced into the first chamber 5 can be moved to the second chamber 6 through the through hole 3. There is no particular limitation. For example, the first chamber member 51 and the second chamber member 61 may be separately prepared and bonded to the substrate 2 so as to be liquid-tight. Alternatively, one surface may form a substantially rectangular parallelepiped box member, the substrate 2 may be inserted and fixed in the center of the box, and then the open surface may be liquid-tightly sealed. In that case, the first chamber member 51 and the second chamber member 61 do not mean separate members but a part of a box member divided by the substrate 2. Although not shown, holes are formed in the first chamber member 51 and the second chamber member 61 to fill and discharge the electrolyte solution and the sample solution, and to insert electrodes and/or leads as needed. You may.
(識別装置の実施形態)
 図3を参照して、識別装置の実施形態について説明する。図3は識別装置100の実施形態の概略断面図である。識別装置100は、デバイス1bに加え、第1チャンバー5内の電解液と接する箇所に形成された第1電極52、第2チャンバー6内の電解液と接する個所に形成された第2電極62、サンプルS1、S2が貫通孔3を通過する時のイオン電流を測定するための電流計7を少なくとも含んでいる。
(Embodiment of identification device)
An embodiment of the identification device will be described with reference to FIG. FIG. 3 is a schematic cross-sectional view of an embodiment of the identification device 100. The identification device 100 includes, in addition to the device 1b, a first electrode 52 formed in a portion in contact with the electrolytic solution in the first chamber 5, a second electrode 62 formed in a portion in contact with the electrolytic solution in the second chamber 6, At least an ammeter 7 for measuring the ion current when the samples S1 and S2 pass through the through hole 3 is included.
 また、識別装置100は、必要に応じて、電流計7で測定したイオン電流を解析する解析部8、測定したイオン電流値及び/または解析部8が解析した結果を表示するための表示部9、予め解析部8や表示部9を機能させるためのプログラムを格納したプログラムメモリ10、プログラムメモリ10に格納されているこのプログラムを読み出し実行するための制御部11を含んでいてもよい。プログラムは、予めプログラムメモリ10に記憶しておいても良いし、記録媒体に記録され、インストール手段を用いてプログラムメモリ10に格納されるようにしてもよい。 Further, the identification device 100, if necessary, the analysis unit 8 that analyzes the ion current measured by the ammeter 7, the display unit 9 that displays the measured ion current value and/or the result analyzed by the analysis unit 8. A program memory 10 in which a program for causing the analysis unit 8 and the display unit 9 to function is stored in advance, and a control unit 11 for reading and executing the program stored in the program memory 10 may be included. The program may be stored in the program memory 10 in advance, or may be recorded in a recording medium and stored in the program memory 10 using an installation unit.
 第1電極52及び第2電極62は、アルミニウム、銅、白金、金、銀、チタン等の公知の導電性金属で形成することができる。第1電極52及び第2電極62は、貫通孔3を挟むように形成し、直流電流を印加することで電解液中のイオンを輸送する。したがって、第1電極52は、第1チャンバー5内の電解液に接する場所に形成されていればよく、基板2の面上、第1チャンバー部材51の内面、又は第1チャンバー5内の空間にリード53を介して配置すればよい。第2電極62も第1電極51と同様に、第2チャンバー6内の電解液に接する場所に形成されていればよく、基板2の面上、第2チャンバー部材61の内面、又は第2チャンバー6内の空間にリード63を介して配置すればよい。なお、図3に示す例では、第1電極52は第1チャンバー部材51の内面に、第2電極62は第2チャンバー部材61の内面にそれぞれ形成されているが、第1電極52及び第2電極62は、第1チャンバー部材51及び第2チャンバー部材61に形成した孔から挿入してもよい。 The first electrode 52 and the second electrode 62 can be formed of a known conductive metal such as aluminum, copper, platinum, gold, silver and titanium. The first electrode 52 and the second electrode 62 are formed so as to sandwich the through hole 3, and a DC current is applied to transport the ions in the electrolytic solution. Therefore, the first electrode 52 has only to be formed at a position in contact with the electrolytic solution in the first chamber 5, and may be formed on the surface of the substrate 2, the inner surface of the first chamber member 51, or the space in the first chamber 5. It may be arranged via the lead 53. Similarly to the first electrode 51, the second electrode 62 may be formed at a position in contact with the electrolytic solution in the second chamber 6, on the surface of the substrate 2, the inner surface of the second chamber member 61, or the second chamber. It may be arranged in the space in 6 via the lead 63. In the example shown in FIG. 3, the first electrode 52 is formed on the inner surface of the first chamber member 51, and the second electrode 62 is formed on the inner surface of the second chamber member 61. The electrode 62 may be inserted through the holes formed in the first chamber member 51 and the second chamber member 61.
 第1電極52は、リード53を介して電源54、アース55に接続している。第2電極62は、リード63を介して電流計7、アース64に接続している。なお、図3に示す例では、電源54は第1電極52側に、電流計7は第2電極62側に接続しているが、電源54と電流計7は、同じ電極側に設けてもよい。 The first electrode 52 is connected to the power supply 54 and the earth 55 via the lead 53. The second electrode 62 is connected to the ammeter 7 and the ground 64 via the lead 63. Although the power supply 54 is connected to the first electrode 52 side and the ammeter 7 is connected to the second electrode 62 side in the example shown in FIG. 3, the power supply 54 and the ammeter 7 may be provided on the same electrode side. Good.
 電源54は、第1電極52及び第2電極62に直流電流を通電できるものであれば特に制限はない。電流計7は、第1電極52及び第2電極62に通電した際に、発生するイオン電流を経時的に測定できるものであれば特に制限はない。なお、図3には図示していないが、必要に応じてノイズ除去回路や電圧安定化回路等を設けてもよい。 The power supply 54 is not particularly limited as long as it can supply a direct current to the first electrode 52 and the second electrode 62. The ammeter 7 is not particularly limited as long as it can measure the ion current generated when the first electrode 52 and the second electrode 62 are energized with time. Although not shown in FIG. 3, a noise removing circuit, a voltage stabilizing circuit, or the like may be provided if necessary.
 識別装置100の貫通孔3にサンプルが通過すると、貫通孔3を流れているイオン電流がサンプルにより遮断され、イオン電流が減少する。このイオン電流の減少量が貫通孔3内のサンプルの体積に比例する。しかしながら、貫通孔3(開口)の距離が短すぎると識別精度が低下し、図3に示すように、サンプルS1、S2のサイズが異なる場合であっても、測定したイオン電流のピーク値に差がでにくくなる。一方、実施形態に係る識別装置100では、隣り合う貫通孔3(開口)の距離を200nm以上となるように配置している。そのため、測定したイオン電流のピーク値に差がでることから、貫通孔3を通過するサンプルS1、S2のサイズに応じて、サンプルの識別ができる。なお、貫通孔3の体積が小さい程、イオン電流の測定感度が向上することから、基板2の厚さ(第1面21と第2面22との距離)は薄い方が好ましい。なお、サンプル液中のサンプル濃度(個数)および基板2上に形成する貫通孔3の数にもよるが、サンプルが貫通孔3を同時に通過する確率は極めて低い。したがって、仮に、数個のサンプルが同時に貫通孔3を通過したとしても、特異的なピークとして認識されるに過ぎず、サンプル液中にどのようなサンプルが含まれているのか識別するには影響を与えるものではない。 When the sample passes through the through hole 3 of the identification device 100, the ion current flowing through the through hole 3 is blocked by the sample, and the ion current decreases. The amount of decrease in the ion current is proportional to the volume of the sample in the through hole 3. However, if the distance of the through hole 3 (opening) is too short, the identification accuracy is lowered, and as shown in FIG. 3, even when the sizes of the samples S1 and S2 are different, there is a difference in the peak value of the measured ion current. Will be difficult to remove. On the other hand, in the identification device 100 according to the embodiment, the through holes 3 (openings) adjacent to each other are arranged such that the distance between them is 200 nm or more. Therefore, there is a difference in the peak value of the measured ionic current, so that the sample can be identified according to the size of the samples S1 and S2 passing through the through hole 3. The smaller the volume of the through hole 3 is, the higher the measurement sensitivity of the ion current is. Therefore, the thickness of the substrate 2 (the distance between the first surface 21 and the second surface 22) is preferably thin. Although it depends on the sample concentration (number) in the sample liquid and the number of through holes 3 formed on the substrate 2, the probability that the sample will pass through the through holes 3 at the same time is extremely low. Therefore, even if several samples pass through the through-hole 3 at the same time, they are only recognized as specific peaks and have no effect on identifying what kind of sample is contained in the sample solution. Does not give.
 解析部8は、電流計7で測定したイオン電流の値(ピーク値)を解析する。上記のとおり、サンプルのサイズに応じてイオン電流の値が変わる。したがって、測定したイオン電流の値に基づき解析部8でデータ解析をすることで、サンプルを識別できる。 The analysis unit 8 analyzes the value (peak value) of the ion current measured by the ammeter 7. As described above, the value of the ionic current changes depending on the size of the sample. Therefore, the sample can be identified by performing data analysis by the analysis unit 8 based on the measured ion current value.
 表示部9は、測定したイオン電流の値(ピーク値)、解析部8で解析した結果を表示できればよく、液晶ディスプレイ、プラズマディスプレイ、有機ELディスプレイなど、公知の表示装置を用いればよい。 The display unit 9 only needs to be able to display the value (peak value) of the measured ion current and the result analyzed by the analysis unit 8, and a known display device such as a liquid crystal display, a plasma display, an organic EL display may be used.
(サンプル識別方法の実施形態)
 次に、図4を参照して、識別装置100を用いたサンプル識別方法について説明する。図4は、サンプル識別方法のフローチャートである。サンプル識別方法の実施形態は、サンプル通過工程(ST1)、イオン電流測定工程(ST2)、サンプル識別工程(ST3)を含んでいる。
(Embodiment of sample identification method)
Next, a sample identification method using the identification device 100 will be described with reference to FIG. FIG. 4 is a flowchart of the sample identification method. The embodiment of the sample identifying method includes a sample passing step (ST1), an ion current measuring step (ST2), and a sample identifying step (ST3).
 サンプル通過工程(ST1)では、サンプルを、基板2に形成した貫通孔3を通過させる。なお、サンプル通過工程を実施する前に、サンプル準備工程を含んでいてもよい。サンプル準備工程は、以下の手順で行うことができる。
(1)第1チャンバー5及び第2チャンバー6に、電解液を充填する。電解液は、第1電極52及び第2電極62が通電できれば特に制限は無く、TEバッファー、PBSバッファー、HEPESバッファー、KCl水溶液等を用いればよい。このとき、第1チャンバー5内と第2チャンバー6内との間は、貫通孔3を介して液絡が取れている。
(2)サンプルを第1チャンバー5に添加する。
 なお、上記(1)と(2)は、別々に行ってもよいが、サンプルが既に含まれている電解液を第1又は第2チャンバーに充填してもよい。
In the sample passing step (ST1), the sample is passed through the through hole 3 formed in the substrate 2. A sample preparation step may be included before the sample passing step. The sample preparation step can be performed by the following procedure.
(1) The first chamber 5 and the second chamber 6 are filled with an electrolytic solution. The electrolyte is not particularly limited as long as the first electrode 52 and the second electrode 62 can be energized, and TE buffer, PBS buffer, HEPES buffer, KCl aqueous solution or the like may be used. At this time, a liquid junction is established between the inside of the first chamber 5 and the inside of the second chamber 6 via the through hole 3.
(2) Add the sample to the first chamber 5.
Although the above (1) and (2) may be performed separately, the electrolytic solution containing the sample may be filled in the first or second chamber.
 サンプル通過工程(ST1)は、上記準備工程で電解液を充填した第1チャンバー5及び第2チャンバー6に配置した第1電極52及び第2電極62を通電させることで実施できる。細菌等のサンプルは表面電化を有する。したがって、第1電極52及び第2電極62に通電すると、通常の拡散に加え、第1チャンバー5に添加したサンプルは電気泳動により基板2に形成した貫通孔3を通過し、第2チャンバー6に移動するが、必要に応じて、サンプルが分散している溶液にポンプ等で圧力を加え、水流によってサンプルが貫通孔3を通過するようにしてもよい。 The sample passing step (ST1) can be performed by energizing the first electrode 52 and the second electrode 62 arranged in the first chamber 5 and the second chamber 6 filled with the electrolytic solution in the preparation step. Samples such as bacteria have surface electrification. Therefore, when the first electrode 52 and the second electrode 62 are energized, in addition to normal diffusion, the sample added to the first chamber 5 passes through the through-hole 3 formed in the substrate 2 by electrophoresis, and then enters the second chamber 6. Although moving, the pressure may be applied to the solution in which the sample is dispersed by a pump or the like as necessary, and the sample may pass through the through hole 3 by a water flow.
 イオン電流測定工程(ST2)では、通電により発生するイオン電流の値を電流計7で経時的に測定する。そして、サンプル識別工程(ST3)では、イオン電流測定工程(ST2)により測定したイオン電流のピーク値から、サンプルを識別すればよい。具体的には、イオン電流の測定値の低下の程度によりサンプルの大きさを識別できる。 In the ion current measurement step (ST2), the value of the ion current generated by energization is measured with the ammeter 7 over time. Then, in the sample identifying step (ST3), the sample may be identified from the peak value of the ion current measured in the ion current measuring step (ST2). Specifically, the size of the sample can be identified by the degree of decrease in the measured value of the ionic current.
 以下に実施例を掲げ、本発明を具体的に説明するが、この実施例は単に本発明の説明のため、その具体的な態様の参考のために提供されているものである。これらの例示は本発明の特定の具体的な態様を説明するためのものであるが、本願で開示する発明の範囲を限定したり、あるいは制限することを表すものではない。 The present invention will be specifically described below with reference to examples, but the examples are provided merely for the purpose of explaining the present invention and for reference of specific modes thereof. These exemplifications are intended to illustrate certain specific embodiments of the invention, but are not meant to limit or limit the scope of the invention disclosed herein.
〔デバイスの作製〕
 先ず、両表面に50nmの窒化シリコン膜を持つ面方位(100)のシリコンウエハー(E&M CO.,LTD)を25mm四方に切った。基板の一方の面に約500μm四方の領域の孔が形成されているエッチング防止用のメタルマスクをかぶせ、RIE装置(RIE-10NR、SAMCO CO.,Ltd)によって、孔が形成されている500μm四方の領域のみ窒化シリコン膜を除去し、シリコン表面をむき出しにした。その後、むき出しにした部分のシリコンのみを選択的に水酸化カリウム水溶液(和光純薬株式会社)によって、約3時間かけて125℃のホットプレート(Hot plate NINOS ND-1、As One CO.,Ltd)上でウェットエッチングを行った。この操作により、基板の他方の面の窒化シリコン膜に到達するまでシリコンをエッチングした。窒化シリコン膜に到達したシリコンの孔は約150μm四方であった。
[Fabrication of device]
First, a silicon wafer (E&M CO., LTD) with a plane orientation (100) having a silicon nitride film of 50 nm on both surfaces was cut into 25 mm squares. A 500 μm square in which holes are formed by an RIE device (RIE-10NR, SAMCO CO., Ltd.) is covered with an etching prevention metal mask in which holes of approximately 500 μm square are formed on one surface of the substrate. The silicon nitride film was removed only in the area (1) to expose the silicon surface. After that, only the exposed portion of the silicon is selectively exposed to a hot plate (Hot plate NINOS ND-1, As One CO., Ltd.) at 125° C. for about 3 hours by using an aqueous potassium hydroxide solution (Wako Pure Chemical Industries, Ltd.). ) Wet etching was performed above. By this operation, silicon was etched until the silicon nitride film on the other surface of the substrate was reached. The silicon holes reaching the silicon nitride film were about 150 μm square.
 次に、上記約150μm四方のシリコンの孔を覆っている窒化シリコン膜のほぼ中央に、電子線描画法により貫通孔3のパターンの描画を行った。次いで、像液に浸して現像を行い、RIE装置によって反応性エッチングにより、窒化シリコン膜に円筒状の貫通孔3を形成した。デバイスは、貫通孔3の数が1~7個、直径が300nm~3.4μm、隣り合う貫通孔同士の距離が30nm~10μm、となるように、各種実施形態を組合わせて作製した。なお、貫通孔3の長さは約50nmであった。 Next, the pattern of the through holes 3 was drawn by an electron beam drawing method at approximately the center of the silicon nitride film covering the above-described about 150 μm square silicon holes. Then, it was immersed in an image solution for development, and reactive etching was performed by an RIE apparatus to form a cylindrical through hole 3 in the silicon nitride film. The device was produced by combining various embodiments such that the number of through holes 3 was 1 to 7, the diameter was 300 nm to 3.4 μm, and the distance between adjacent through holes was 30 nm to 10 μm. The length of the through hole 3 was about 50 nm.
[識別装置の作製]
 次に、[デバイスの作製]で作製した基板2の上下に、電極、電解液及びサンプル投入用の孔を設けたジメチルポリシロキサン(PDMS)製のポリマーブロック(TORAY社製)を液密に貼り付け、第1チャンバー5及び第2チャンバー6を作製した。第1チャンバー5及び第2チャンバー6の容量は、各々約10μlであった。第1電極52及び第2電極62には銀塩化銀電極を用い、ポリマーブロックに設けた孔から第1チャンバー5及び第2チャンバー6に挿入した。電源54として電池駆動のバイアス電源(アクシスネット)を用い、リードを介して第1電極52に接続した。電流計7には、電流アンプと1MHzの高時間分解能を持つデジタイザ(NI5922, National Instruments)を用いてデータの取得を行い、取得したデータは、RAIDドライブHDD(HDD-8263、National Instruments Co.)に格納した。
[Production of identification device]
Next, a polymer block (manufactured by TORAY) made of dimethylpolysiloxane (PDMS) having electrodes, an electrolytic solution, and holes for introducing a sample is liquid-tightly attached to the upper and lower sides of the substrate 2 prepared in [Production of device]. Then, the first chamber 5 and the second chamber 6 were produced. The volumes of the first chamber 5 and the second chamber 6 were each about 10 μl. A silver-silver chloride electrode was used for the first electrode 52 and the second electrode 62, and the electrodes were inserted into the first chamber 5 and the second chamber 6 through the holes provided in the polymer block. A battery-driven bias power source (Axis Net) was used as the power source 54, and was connected to the first electrode 52 via a lead. The ammeter 7 uses a current amplifier and a digitizer (NI 5922, National Instruments) having a high time resolution of 1 MHz to acquire data, and the acquired data is a RAID drive HDD (HDD-8263, National Instruments Co.). Stored in.
[サンプルの識別方法の実施例1]
1.サンプル液の調整
 サンプルには、直径780nmのカルボキシ基修飾ポリスチレン粒子(Thermo Scientific社製Reagent Microspheres)を用い、電解液(TEバッファー:ニッポンジーン社製TE(pH 8.0))1mlにポリスチレン粒子懸濁液1μlを懸濁することでサンプル液を作製した。
[Example 1 of sample identification method]
1. Preparation of sample solution As a sample, carboxy group-modified polystyrene particles (Reagent Microspheres manufactured by Thermo Scientific) having a diameter of 780 nm were used, and polystyrene particles were suspended in 1 ml of an electrolytic solution (TE buffer: TE (pH 8.0) manufactured by Nippon Gene Co., Ltd.). A sample liquid was prepared by suspending 1 μl of the liquid.
2.イオン電流の測定
 作製した識別装置の第2チャンバー6に、電解液(TEバッファー:ニッポンジーン社製TE(pH 8.0))を充填した。次に、上記1.で調整したサンプル液を第1チャンバー5に加え、第1電極52及び第2電極62に800mVの電圧を印加し、イオン電流Iionを測定した。
2. Measurement of Ion Current The second chamber 6 of the produced identification device was filled with an electrolytic solution (TE buffer: TE (pH 8.0) manufactured by Nippon Gene Co., Ltd.). Next, the above 1. The sample liquid prepared in step 1 was added to the first chamber 5, a voltage of 800 mV was applied to the first electrode 52 and the second electrode 62, and the ion current I ion was measured.
 図5A~図5Eは、イオン電流の測定結果を示すチャートである。イオン電流値が大幅に低下している箇所は、ポリスチレン粒子が貫通孔3を通過したことを示している。図5B~図5Dは、直径1.2μmの貫通孔3を略正方形となるように4個配置したデバイスを用いており、貫通孔3の距離が、図5Bは100nm、図5Cは1μm、図5Dは10μmとなるように配置した。また、図5A及び図5Eは、比較用のデバイスを用いた例を示しており、図5Aは直径1.2μmの4個の貫通孔を足した大きさと同じである直径2.4μmの貫通孔3を一個配置した。また、図5Eは、図5B~図5Dと同じ直径1.2μmの貫通孔3を一個配置した。 5A to 5E are charts showing measurement results of ion current. The location where the ionic current value is significantly reduced indicates that the polystyrene particles have passed through the through holes 3. 5B to 5D use a device in which four through holes 3 having a diameter of 1.2 μm are arranged in a substantially square shape, and the distance of the through holes 3 is 100 nm in FIG. 5B and 1 μm in FIG. 5C. 5D was arranged so as to be 10 μm. 5A and 5E show an example using a device for comparison, and FIG. 5A shows a through hole having a diameter of 2.4 μm, which is the same as the size of four through holes having a diameter of 1.2 μm. One 3 was arranged. Further, in FIG. 5E, one through hole 3 having a diameter of 1.2 μm, which is the same as in FIGS. 5B to 5D, is arranged.
 図5B~図5Dから明らかなように、隣り合う貫通孔3の距離を短くする程、貫通孔3の大きさは同じであるにもかかわらず、イオン電流のピーク値が小さくなった。そして、図5Aおよび図5Bを参照すると、図5Bでは貫通孔3を4個配置しているが、隣り合う貫通孔3の距離は100nmと短いため、測定したイオン電流のピーク値は、図5Bの4個の貫通孔を足した大きさの貫通孔3を一個形成した図5Aのイオン電流のピーク値と近い値となった。一方、図5Dおよび図5Eを参照すると、図5Dでは貫通孔3を4個配置しているが、隣り合う貫通孔3の距離は10μmと離れているため、測定したイオン電流のピーク値は、同じ大きさの貫通孔3を一個形成した図5Eのイオン電流のピーク値とほぼ同じであった。 As is clear from FIGS. 5B to 5D, the shorter the distance between the adjacent through holes 3 is, the smaller the peak value of the ionic current is, although the through holes 3 have the same size. Then, referring to FIGS. 5A and 5B, although four through holes 3 are arranged in FIG. 5B, since the distance between adjacent through holes 3 is as short as 100 nm, the peak value of the measured ion current is as shown in FIG. 5B. The value was close to the peak value of the ion current in FIG. 5A in which one through hole 3 having a size obtained by adding the four through holes was formed. On the other hand, referring to FIGS. 5D and 5E, although four through holes 3 are arranged in FIG. 5D, since the distance between adjacent through holes 3 is 10 μm, the measured peak value of the ion current is It was almost the same as the peak value of the ion current in FIG. 5E in which one through hole 3 having the same size was formed.
[サンプルの識別方法の実施例2]
 次に、サンプルとして直径900nmのポリスチレン粒子を用い、貫通孔3を7個配置したデバイスを用いた実験を行った。図6A~図6Eは、イオン電流の測定結果を示すチャートである。図6B~図6Dは、直径1.2μmの貫通孔3を7個配置しており、隣り合う全ての貫通孔3の距離が、図6Bは100nm、図6Cは1μm、図6Dは10μmとなるように配置した。また、図6A及び図6Eは、比較用のデバイスを用いた例を示しており、図6Aは直径1.2μmの7個の貫通孔と同じ面積である直径3.2μmの貫通孔3を一個配置した。また、図6Eは、図6B~図6Dと同じ直径1.2μmの貫通孔3を一個配置した。サンプルのサイズと貫通孔3の配置以外は、[サンプルの識別方法の実施例1]と同様の手順でイオン電流の測定を行った。以下の実施例においても、サンプルとデバイスの配置以外は、イオン電流の測定手順は同じである。
[Example 2 of sample identification method]
Next, an experiment was performed using polystyrene particles having a diameter of 900 nm as a sample and a device in which seven through holes 3 were arranged. 6A to 6E are charts showing measurement results of ion current. In FIGS. 6B to 6D, seven through holes 3 having a diameter of 1.2 μm are arranged, and the distances between all the adjacent through holes 3 are 100 nm in FIG. 6B, 1 μm in FIG. 6C, and 10 μm in FIG. 6D. So that Further, FIGS. 6A and 6E show an example using a device for comparison, and FIG. 6A shows one through hole 3 having a diameter of 3.2 μm, which has the same area as seven through holes having a diameter of 1.2 μm. I placed it. Further, in FIG. 6E, one through hole 3 having a diameter of 1.2 μm, which is the same as in FIGS. 6B to 6D, is arranged. The ionic current was measured by the same procedure as in [Example 1 of sample identification method] except the size of the sample and the arrangement of the through holes 3. Also in the following examples, the procedure for measuring the ion current is the same except the arrangement of the sample and the device.
 図6A~図6Eから明らかなように、貫通孔3の数を4個→7個に変更した場合でも、イオン電流のピーク値については、図5A~図5Eと同様の傾向が見られた。しかしながら、図6Aおよび図6Bから明らかなように、7個の貫通孔3を100nmの距離に配置した場合のイオン電流のピーク値は、図6Aとほぼ同じであった。換言すると、貫通孔3を7個形成しているにもかかわらず、同等の開口面積を有する貫通孔を一つ形成した場合と同じ測定精度となった。また、図6Dおよび図6Eから明らかなように、7個の貫通孔3を10μmの距離に配置した場合のイオン電流のピーク値は、図6Eのイオン電流のピーク値よりやや低い値となった。 As is apparent from FIGS. 6A to 6E, even when the number of through holes 3 was changed from 4 to 7, the peak value of the ion current showed the same tendency as in FIGS. 5A to 5E. However, as is clear from FIGS. 6A and 6B, the peak value of the ion current when the seven through holes 3 were arranged at a distance of 100 nm was almost the same as that in FIG. 6A. In other words, even though seven through holes 3 were formed, the measurement accuracy was the same as when one through hole having the same opening area was formed. Further, as is clear from FIGS. 6D and 6E, the peak value of the ionic current when the seven through holes 3 are arranged at a distance of 10 μm is slightly lower than the peak value of the ionic current of FIG. 6E. ..
[サンプルの識別方法の実施例3]
 次に、サンプルとして直径200nmのポリスチレン粒子を用い、貫通孔3の直径を300nm、貫通孔3の数を1~7個、貫通孔3の距離を100nmとなるように配置したデバイスを用いた実験を行った。図7A~図7Eは、イオン電流の測定結果を示すチャートである。図7A~図7Eから明らかなように、貫通孔3の数を多くするほど、イオン電流のピーク値は小さくなった。一方、貫通孔3の数が多い程、単位時間当たりのピークの数、換言すると、単位時間当たりに貫通孔3を通過するサンプルの数が多くなることを確認した。
[Example 3 of sample identification method]
Next, an experiment was conducted using a device in which polystyrene particles having a diameter of 200 nm were used as a sample, the diameter of the through holes 3 was 300 nm, the number of the through holes 3 was 1 to 7, and the distance between the through holes 3 was 100 nm. I went. 7A to 7E are charts showing measurement results of ion current. As is clear from FIGS. 7A to 7E, the larger the number of through holes 3, the smaller the peak value of the ion current. On the other hand, it was confirmed that the larger the number of through holes 3, the larger the number of peaks per unit time, in other words, the number of samples passing through the through holes 3 per unit time.
 以上の結果より、基板2上に形成する貫通孔3の数を多くするほど、隣り合う貫通孔3の距離を長くした方がイオン電流のピーク値が大きくなることから、識別精度(測定感度)が向上すること、および、貫通孔3の数を多くするほど、単位時間当たりに貫通孔3を通過するサンプルの数が多くなることからが明らかとなった。したがって、形成する貫通孔3の数と識別精度を考慮し、単位面積当たりに形成する貫通孔3の数と距離を適宜調整すればよい。 From the above results, as the number of the through holes 3 formed on the substrate 2 is increased, the peak value of the ion current becomes larger as the distance between the adjacent through holes 3 becomes longer, so that the identification accuracy (measurement sensitivity) is increased. It was clarified that the number of samples passing through the through-hole 3 per unit time increased as the number of the through-holes 3 increased. Therefore, the number and the distance of the through holes 3 formed per unit area may be appropriately adjusted in consideration of the number of the through holes 3 formed and the identification accuracy.
[サンプルの識別方法の実施例4]
 次に、貫通孔3の距離を更に詳細に検討する実験を行った。サンプルとして直径780nmのポリスチレン粒子を用い、直径は1.2μmの貫通孔3を2個配置し、貫通孔3の距離を30nm(図8B)、50nm(図8C)、100nm(図8D)、200nm(図8E)、400nm(図8F)、600nm(図8G)、1000nm(図8H)、と変化させた。比較対象として、直径1.44μmの貫通孔3を1個配置したデバイス(図8A)でも実験を行った。なお、図8A~図8Hは、複数のサンプルが貫通孔3を通過した際のイオン電流の測定値を重ね合わせたグラフであり、横軸はイオン電流のピーク値、縦軸は該当するイオン電流のピーク値を示したサンプルの数を表す。
[Example 4 of sample identification method]
Next, an experiment was conducted to examine the distance of the through hole 3 in more detail. Polystyrene particles having a diameter of 780 nm are used as a sample, two through holes 3 having a diameter of 1.2 μm are arranged, and the distances of the through holes 3 are 30 nm (FIG. 8B), 50 nm (FIG. 8C), 100 nm (FIG. 8D), 200 nm. (FIG. 8E), 400 nm (FIG. 8F), 600 nm (FIG. 8G), 1000 nm (FIG. 8H). As a comparison target, an experiment was also performed with a device (FIG. 8A) in which one through hole 3 having a diameter of 1.44 μm was arranged. 8A to 8H are graphs in which the measured values of the ionic current when a plurality of samples pass through the through hole 3 are superimposed, the horizontal axis represents the peak value of the ionic current, and the vertical axis represents the corresponding ionic current. Represents the number of samples showing the peak value of.
 図8Aに示す通り、サンプルサイズに比較して貫通孔3のサイズが比較的大きい場合には、イオン電流のピーク値の分布は大きく二つに分かれた。これは、サンプルが貫通孔3を通過する際に、貫通孔3の中央付近を通過した場合と、貫通孔3の周辺部分を通過した場合では、その瞬間に生じる電場の不均一性が異なるため、中央付近を通過した時には周辺部分を通過した時に比して小さなイオン電流の減少が起きることから、粒子のポア通過位置に応じたイオン電流の分布が観測されたためと考えられる。一方、図8Bに示すように、貫通孔3の距離が30nmと非常に短い場合は、図8Aと同様、イオン電流のピーク値の分布は大きく2つに分かれたが、図8C~図8Hから明らかなように、貫通孔3の距離が長くなるにしたがってイオン電流のピーク値の2つの異なる分布の差は小さくなった。そして、図8Eに示すように、貫通孔3の距離を200nmとした場合には、イオン電流のピーク値の明確な2つの分布は見られなくなり、加えて、分布のピーク位置がそれ以上ポア間の距離を離しても変わらず一定であった。以上の結果より、貫通孔3を少なくとも2以上形成する場合は、貫通孔3の距離を200nm以上とすることが好ましいことが明らかとなった。 As shown in FIG. 8A, when the size of the through hole 3 is relatively large compared to the sample size, the distribution of the peak value of the ionic current is largely divided into two. This is because, when the sample passes through the through hole 3, the non-uniformity of the electric field generated at that moment is different when the sample passes through the vicinity of the center of the through hole 3 and when the sample passes through the peripheral portion of the through hole 3. It is considered that the ion current distribution was observed depending on the position where the particles passed through the pores, because the ion current decreased a little when passing through the central part as compared with when passing through the peripheral part. On the other hand, as shown in FIG. 8B, when the distance between the through holes 3 is as short as 30 nm, the distribution of the peak value of the ion current is largely divided into two, as in FIG. 8A. As is apparent, the difference between the two different distributions of the peak value of the ion current becomes smaller as the distance of the through hole 3 becomes longer. Then, as shown in FIG. 8E, when the distance between the through holes 3 is set to 200 nm, two distinct distributions of the peak value of the ion current cannot be seen, and in addition, the peak position of the distribution is higher than that between the pores. It remained constant even if the distance was increased. From the above results, it is clear that when forming at least two or more through holes 3, it is preferable to set the distance between the through holes 3 to 200 nm or more.
[サンプルの識別方法の実施例5]
 次に、サンプルとして直径510nm、780nm、900nmの3種類のポリスチレン粒子を用い、直径が1.2μmの貫通孔3を7個配置したデバイスを用いてサンプルの識別実験を行った。図9Aは、貫通孔3の距離が全て10μmの場合のイオン電流のピーク値の分布を示すグラフ、図9Bは貫通孔3の距離が全て100nmの場合のイオン電流のピーク値の分布を示すグラフである。図9Bのグラフから明らかなように、貫通孔3の距離を100nmとした場合には、サンプルのサイズが780nmと900nmのイオン電流のピークが重なり、サンプルの識別は困難であった。一方、図9Aのグラフから明らかなように、貫通孔3の距離を長くした場合には、サンプルのサイズに応じたイオン電流のピーク分布が得られ、サイズが異なるサンプルであっても、識別をすることができた。
[Example 5 of sample identification method]
Next, a sample identification experiment was performed using three types of polystyrene particles having diameters of 510 nm, 780 nm, and 900 nm as samples, and a device in which seven through holes 3 having a diameter of 1.2 μm were arranged. FIG. 9A is a graph showing the distribution of the peak values of the ion current when the distances of the through holes 3 are all 10 μm, and FIG. 9B is a graph showing the distribution of the peak values of the ion current when the distances of the through holes 3 are all 100 nm. Is. As is clear from the graph of FIG. 9B, when the distance between the through holes 3 was 100 nm, the peaks of the ion currents of the sample sizes of 780 nm and 900 nm overlapped, and it was difficult to identify the sample. On the other hand, as is clear from the graph of FIG. 9A, when the distance of the through hole 3 is increased, the peak distribution of the ion current according to the size of the sample is obtained, and even if the sample has a different size, the identification is performed. We were able to.
[サンプルの識別方法の実施例6]
 次に、サンプルとして780nmのポリスチレン粒子を用い、直径が1.2μmの貫通孔3を2個配置したデバイスを用いてイオン電流の測定を行った。図10Aは貫通孔3の距離が100nm、図10Bは貫通孔3の距離が1μm、図10Cは貫通孔3の距離が10μmで、図10A~図10Cの上段はイオン電流測定の際のベース電流の変化を示すグラフ、下段は個々のサンプルが貫通孔3を通過する際のイオン電流のピーク値の変化をドットとして示したグラフである。上段の矢印で示した箇所は、貫通孔3にサンプルが詰まったため、ベース電流が大幅に変化した箇所(時間)を表している。下段の矢印も、貫通孔3にサンプルが詰まった箇所(時間)を表している。図10Aに示す通り、貫通孔3の距離が短い場合は、貫通孔3が詰まった後では、検出するイオン電流のピーク値に顕著な変化が見られた。一方、図10B及び図10Cから明らかなように、貫通孔3の距離を長くするほど、詰まった後のイオン電流のピーク値の変化は小さくなった。以上の結果から、貫通孔3の距離を長くするほど、仮に、貫通孔3の何れかがサンプルにより目詰まりを起こしても、測定結果に影響を及ぼしにくいという顕著な効果を奏することが明らかとなった。
[Example 6 of sample identification method]
Next, using 780 nm polystyrene particles as a sample, the ion current was measured using a device in which two through holes 3 having a diameter of 1.2 μm were arranged. 10A shows a distance of the through hole 3 of 100 nm, FIG. 10B shows a distance of the through hole 3 of 1 μm, and FIG. 10C shows a distance of the through hole 3 of 10 μm. The upper part of FIGS. 10A to 10C shows the base current when the ion current is measured. The lower graph is a graph showing the change in the peak value of the ionic current when each sample passes through the through hole 3, as a dot. The part indicated by the arrow in the upper part represents the part (time) at which the base current changed significantly due to the sample being clogged in the through hole 3. The arrow in the lower row also indicates the location (time) at which the sample is clogged in the through hole 3. As shown in FIG. 10A, when the distance between the through holes 3 was short, a remarkable change was found in the peak value of the ion current to be detected after the through holes 3 were clogged. On the other hand, as is clear from FIGS. 10B and 10C, the longer the distance of the through hole 3, the smaller the change in the peak value of the ion current after clogging. From the above results, it is clear that as the distance of the through holes 3 is increased, even if any of the through holes 3 is clogged by the sample, the remarkable effect that the measurement result is less affected is exhibited. became.
 なお、サンプルの識別方法の実施例1~6では、貫通孔3と貫通孔3の距離が10μmまでの例で実施したが、測定結果から、貫通孔3と貫通孔3の距離を長くした方が、識別精度との観点では望ましいことは明らかである。したがって、必要に応じて、貫通孔3と貫通孔3との距離を、10μmより長く、例えば、11μm以上、12μm以上、13μm以上、14μm以上、としてもよい。 In Examples 1 to 6 of the sample identification method, the distance between the through holes 3 and 10 was up to 10 μm. However, from the measurement results, the method in which the distance between the through holes 3 and 3 is increased However, it is clear that it is desirable in terms of identification accuracy. Therefore, if necessary, the distance between the through holes 3 may be longer than 10 μm, for example, 11 μm or more, 12 μm or more, 13 μm or more, 14 μm or more.
 本明細書で開示するデバイスを用いてサンプル識別方法を実施すると、サンプルの識別精度が向上し、サイズの異なるサンプルであっても識別ができる。したがって、分析機器産業における分析装置の開発に有用である。 By implementing the sample identification method using the device disclosed in this specification, the identification accuracy of the sample is improved, and even samples of different sizes can be identified. Therefore, it is useful for the development of analytical devices in the analytical instrument industry.
1、1a、1b…サンプル識別用デバイス、2…基板、3…貫通孔、5…第1チャンバー、6…第2チャンバー、7…電流計、8…解析部、9…表示部、10…プログラムメモリ、11…制御部、21…第1面、22…第2面、31…第1開口、32…第2開口、51…第1チャンバー部材、52…第1電極、53…リード、54…電源、55…アース、61…第2チャンバー部材、62…第2電極、63…リード、64…アース、100…識別装置、S1、S2…サンプル 1, 1a, 1b... Sample identifying device, 2... Substrate, 3... Through hole, 5... First chamber, 6... Second chamber, 7... Ammeter, 8... Analysis unit, 9... Display unit, 10... Program Memory, 11... Control part, 21... First surface, 22... Second surface, 31... First opening, 32... Second opening, 51... First chamber member, 52... First electrode, 53... Lead, 54... Power source, 55... Ground, 61... Second chamber member, 62... Second electrode, 63... Lead, 64... Ground, 100... Identification device, S1, S2... Sample

Claims (9)

  1.  サンプル液中のサンプルの識別方法であって、
     該識別方法は、
      前記サンプルを、基板に形成した貫通孔を通過させるサンプル通過工程と、
      前記サンプルが、前記貫通孔を通過する時のイオン電流の変化を測定するイオン電流測定工程と、
      測定したイオン電流の値から、前記サンプル液中のサンプルを識別するサンプル識別工程と、
    を少なくとも含み、
     前記基板には2以上の貫通孔が形成され、隣り合う貫通孔同士の距離が少なくとも200nm以上離れるように配置されている、
    サンプル識別方法。
    A method for identifying a sample in a sample liquid, comprising:
    The identification method is
    A sample passing step of passing the sample through a through hole formed in the substrate;
    An ion current measuring step of measuring a change in ion current when the sample passes through the through hole,
    From the value of the measured ion current, a sample identification step of identifying the sample in the sample liquid,
    Including at least
    Two or more through holes are formed in the substrate, and the through holes are arranged such that the distance between adjacent through holes is at least 200 nm or more.
    Sample identification method.
  2.  前記隣り合う貫通孔同士の距離が、1μm以上である、
    請求項1に記載のサンプル識別方法。
    The distance between the adjacent through holes is 1 μm or more,
    The sample identification method according to claim 1.
  3.  前記隣り合う貫通孔同士の距離が、10μより長い、
    請求項2に記載のサンプル識別方法。
    The distance between the adjacent through holes is longer than 10 μ,
    The sample identification method according to claim 2.
  4.  前記サンプル液には、サイズが異なるサンプルが含まれている、
    請求項1~3の何れか一項に記載のサンプル識別方法。
    The sample liquid contains samples of different sizes,
    The sample identification method according to any one of claims 1 to 3.
  5.  サンプル液中のサンプルの識別方法に用いるデバイスであって、
     該デバイスは、
      基板と、
      該基板に形成された2以上の貫通孔と、
    を含み、
     前記2以上の貫通孔は、隣り合う貫通孔同士の距離が少なくとも200nm以上離れるように配置されている、
    サンプル識別用デバイス。
    A device used for identifying a sample in a sample liquid,
    The device is
    Board,
    Two or more through holes formed in the substrate,
    Including,
    The two or more through holes are arranged such that the distance between adjacent through holes is at least 200 nm or more.
    Device for sample identification.
  6.  前記隣り合う貫通孔同士の距離が、1μm以上である、
    請求項5に記載のサンプル識別用デバイス。
    The distance between the adjacent through holes is 1 μm or more,
    The device for sample identification according to claim 5.
  7.  前記隣り合う貫通孔同士の距離が、10μmより長い、
    請求項6に記載のサンプル識別用デバイス。
    The distance between the adjacent through holes is longer than 10 μm,
    The device for sample identification according to claim 6.
  8.  前記基板の第1面側の少なくとも貫通孔を含む面とで電解液を充填する第1チャンバーを形成する第1チャンバー部材と、
     前記基板の第2面側の少なくとも貫通孔を含む面とで電解液を充填する第2チャンバーを形成する第2チャンバー部材と、
    を含む、請求項5~7の何れか一項に記載のサンプル識別用デバイス。
    A first chamber member forming a first chamber filled with an electrolytic solution at least on the first surface side of the substrate including a through hole;
    A second chamber member that forms a second chamber filled with an electrolytic solution by at least the surface including the through hole on the second surface side of the substrate;
    The sample identification device according to claim 5, further comprising:
  9.  請求項8に記載のサンプル識別用デバイスと、
     前記第1チャンバーに形成された第1電極と、
     前記第2チャンバーに形成された第2電極と、
     サンプルが前記貫通孔を通過する時のイオン電流を計測するための電流計と、
    を含む、
    サンプル識別装置。
    The sample identification device according to claim 8,
    A first electrode formed in the first chamber;
    A second electrode formed in the second chamber;
    An ammeter for measuring an ion current when a sample passes through the through hole,
    including,
    Sample identification device.
PCT/JP2019/050469 2018-12-25 2019-12-24 Sample identification method, device for identifying sample, and sample identification apparatus WO2020138021A1 (en)

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WO2012165400A1 (en) * 2011-06-03 2012-12-06 株式会社日立ハイテクノロジーズ Method and device for optical analysis of biopolymer
US20180106746A1 (en) * 2016-10-17 2018-04-19 Robert Bosch Gmbh Capacitive moisture sensor system for a surveillance camera
WO2018131064A1 (en) * 2017-01-10 2018-07-19 株式会社日立ハイテクノロジーズ Current measurement device and current measurement method using nanopore

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WO2012165400A1 (en) * 2011-06-03 2012-12-06 株式会社日立ハイテクノロジーズ Method and device for optical analysis of biopolymer
US20180106746A1 (en) * 2016-10-17 2018-04-19 Robert Bosch Gmbh Capacitive moisture sensor system for a surveillance camera
WO2018131064A1 (en) * 2017-01-10 2018-07-19 株式会社日立ハイテクノロジーズ Current measurement device and current measurement method using nanopore

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