WO2020135303A1 - 一种具有高的红光亮度和高的可靠性的发光装置 - Google Patents

一种具有高的红光亮度和高的可靠性的发光装置 Download PDF

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WO2020135303A1
WO2020135303A1 PCT/CN2019/127283 CN2019127283W WO2020135303A1 WO 2020135303 A1 WO2020135303 A1 WO 2020135303A1 CN 2019127283 W CN2019127283 W CN 2019127283W WO 2020135303 A1 WO2020135303 A1 WO 2020135303A1
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light
layer
phosphor
emitting
reflective layer
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French (fr)
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田梓峰
张世忠
李屹
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Shenzhen Appotronics Corp Ltd
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Appotronics Corp Ltd
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/71—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks using a combination of separate elements interconnected by heat-conducting means, e.g. with heat pipes or thermally conductive bars between separate heat-sink elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/28—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14—Measures for saving energy, e.g. in green houses

Definitions

  • the invention relates to a light-emitting device with high red light brightness and high reliability.
  • red light source such as red LED or red laser
  • problems of this method are also significant, such as the increase in system volume and the temperature of the red laser
  • the limitation of the output power is also obvious, so the method of increasing the red light source has limitations.
  • Another method for increasing the proportion of red light in the prior art is to use red phosphor, but the red phosphor absorbs a lot of short-wavelength light when it is irradiated by the laser, so it generates more heat and has a temperature effect
  • a heat dissipation component with reflection such as the commonly used mirror aluminum reflection layer or silver reflection layer, which has both reflection and heat dissipation effects.
  • the reflectivity of the silver reflective layer is relatively high, it is susceptible to oxidation and vulcanization, and thus has low reliability.
  • there is also a method of using long-wavelength yellow light combined with a filter to generate red light which uses a long-wavelength yellow light of the YAG:Ce 3+ system with good thermal stability and good light saturation performance.
  • the thermal effect of the light source is smaller than the thermal effect of the red light source, so the red light brightness and efficiency generated by this method are better, but because of the use of the filter, the cost is increased and the structure is not compact. It can be seen that the laser fluorescent light source for generating red light in the prior art is either costly and not compact, or its red light efficiency and brightness are low, which restricts the improvement of the brightness and color gamut of its laser display products.
  • the present invention aims to provide a light emitting device with high red light emitting efficiency, compact structure, low cost and excellent heat dissipation performance.
  • a light-emitting device including a heat-conducting substrate, a reflective layer, and a light-emitting layer sequentially stacked from bottom to top, wherein the reflective layer is a gold reflective layer, and the light-emitting layer includes Y 3 Al 5 O 12 : Ce 3+ phosphor, (Y, Gd) 3 Al 5 O 12 : Ce 3+ phosphor, ⁇ -SiAlON: Eu 2+ phosphor and (Sr, Ca) AlSiN 3 : Eu 2+ fluorescence any one or more of powder, the Y 3 Al 5 O 12: Ce 3+ doping concentration of Ce 3+ phosphor is not less than 1.2mol%, the (Y, Gd) 3 Al 5 O 12 : The doping concentration of Ce 3+ in Ce 3+ phosphor is 0.5 mol% or more and the doping concentration of Gd 3+ is 10 mol% or more.
  • the light-emitting device further includes a transition layer, the transition layer is disposed between the light-emitting layer and the reflective layer, and the transition layer is made of nickel or a nickel-chromium alloy.
  • the thickness of the transition layer is less than 2 nm.
  • the light-emitting device further includes a solder layer provided between the reflective layer and the thermally conductive substrate, and the solder layer is used to firmly join the reflective layer and the thermally conductive substrate.
  • solder layer is an alloy solder layer selected from gold tin, silver tin, and bismuth tin.
  • the thermally conductive substrate is selected from a copper substrate, a copper substrate plated with nickel-gold surface, or a silicon carbide, aluminum nitride substrate plated with nickel-gold surface.
  • the thickness of the gold reflective layer is 80-200 nm.
  • the light-emitting layer is fluorescent ceramic or fluorescent glass.
  • the fluorescent ceramic is any of the following ceramics: Y 3 Al 5 O 12 : Ce 3+ phosphor or (Y, Gd) 3 Al 5 O 12 : Ce 3+ phosphor pure phase ceramic; Multiphase ceramics formed by Al 2 O 3 , Y 2 O 3 , Mg 2 AlO 4 and Y 3 Al 5 O 12 : Ce 3+ phosphor or (Y, Gd) 3 Al 5 O 12 : Ce 3+ phosphor respectively ; ⁇ -SiAlON: Eu 2+ phosphor or (Sr, Ca) AlSiN 3 : pure phase ceramics of Eu 2+ phosphor; and ⁇ -SiAlON: Eu 2+ phosphor or (Sr, Ca) AlSiN 3 : Eu 2 + Multiphase ceramics formed by phosphor and fluoride.
  • the light-emitting device further includes at least one second light-emitting layer and at least one second reflective layer, the second light-emitting layer and the light-emitting layer are coplanarly disposed, and the second reflective layer and the reflective layer are in common The plane is disposed, and the second reflective layer is disposed below the second light-emitting layer, and is used to reflect the light emitted by the second light-emitting layer.
  • the second light-emitting layer includes at least one of scattering particles, yellow light phosphor, and green light phosphor.
  • the second reflective layer is a silver reflective layer or an inorganic diffuse reflective layer.
  • a protective layer made of gold, platinum or its alloy is provided under the second reflective layer to protect the second reflective layer from sulfidation and oxidation.
  • the present invention provides a light-emitting device including a heat-conducting substrate, a reflective layer, and a light-emitting layer stacked in this order from bottom to top, wherein the reflective layer is a gold reflective layer, and the light-emitting layer includes Y 3 Al 5 O 12 : Ce 3+ phosphor, (Y, Gd) 3 Al 5 O 12 : Ce 3+ phosphor, ⁇ -SiAlON: Eu 2+ phosphor and (Sr, Ca) AlSiN 3 : Eu 2+ phosphor in any one or more of the Y 3 Al 5 O 12: Ce 3+ doping concentration of Ce 3+ phosphor is not less than 1.2mol%, the (Y, Gd) 3 Al 5 O 12 : The doping concentration of Ce 3+ in Ce 3+ phosphor is 0.5 mol% or more and the doping concentration of Gd 3+ is 10 mol% or more.
  • the reliability of the light-emitting device using gold as the reflective layer in the present invention is high.
  • the reflectivity of the gold reflective layer of the present invention is greater than 80% only for light with a wavelength of 555 nm or more, and greater than 95% for light with a wavelength of 650 nm or more, that is, the gold reflective layer 12 has a certain limit for light with a wavelength of 650 nm or less The absorption is especially serious for light below 555nm.
  • the gold reflective layer of the present invention has the functions of selectively reflecting red light and absorbing green light, blue light and purple light, and can reflect only red light without using color filters, simplifying the structure and saving cost.
  • the phosphor with a specific doping concentration in the light-emitting layer of the light-emitting device of the present invention makes the wavelength of excited light closer to the wavelength of red light, which increases the ratio of red light and reduces the absorption of green light by the gold reflective layer. The resulting thermal effect. Therefore, the light-emitting device of the present invention has high red light brightness and high reliability, and while reducing costs, a more compact optical structure can also be realized.
  • FIG. 1 is a schematic diagram of a light emitting device according to the present invention.
  • FIG. 2 is a graph showing the reflectance of several metal materials under light in different wavelength ranges.
  • FIG. 3 is a schematic structural view of a light emitting device according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic diagram and a cross-sectional schematic diagram of a structure of a rotary color wheel according to Embodiment 2 of the present invention.
  • the present invention provides a light-emitting device including a heat-conducting substrate 14, a reflective layer 12, and a light-emitting layer 11 stacked in this order from bottom to top.
  • the thermally conductive substrate 14 has high thermal conductivity, and is preferably a copper substrate or a copper substrate plated with nickel-gold on the surface, or may be a nickel-gold-plated silicon carbide (SiC) or aluminum nitride (AlN) substrate.
  • the light-emitting layer 11 may be a pure phase ceramic of Y 3 Al 5 O 12 : Ce 3+ phosphor or (Y, Gd) 3 Al 5 O 12 : Ce 3+ phosphor, or Al 2 O with a peak wavelength greater than 555 nm.
  • Multiphase ceramics can also be pure phase ceramics of ⁇ -SiAlON:Eu 2+ phosphors or pure phase ceramics of (Sr,Ca)AlSiN 3 :Eu 2+ phosphors or their fluorides such as calcium fluoride and magnesium fluoride
  • the complex-phase ceramics formed by the chemical compound may also be fluorescent glass formed by mixing and sintering the above-mentioned fluorescent powders and glass powders.
  • Y 3 Al 5 O 12 Ce 3+ Ce 3+ doping concentration of not less than 1.2mol%
  • (Y, Gd) 3 Al 5 O 12 Ce 3+ doping concentration of Ce 3+ 0.5 mol% or more and the doping concentration of Gd 3+ is 10 mol% or more.
  • the higher the doping concentration of Ce 3+ in Y 3 Al 5 O 12 the longer the emission wavelength of Y 3 Al 5 O 12.
  • the concentration of Y 3 Al 5 O 12 When the doping concentration of Ce 3+ is 1.2 mol%, the concentration of Y 3 Al 5 O 12 The peak emission wavelength is 555nm, and the higher the doping concentration of Gd 3+ in (Y, Gd) 3 Al 5 O 12 , the longer the emission wavelength of (Y, Gd) 3 Al 5 O 12 , the longer the Ce 3+
  • the luminescence peak wavelength of (Y, Gd) 3 Al 5 O 12 is 555 nm.
  • the light-emitting layer 11 can produce yellow or red fluorescence after being excited by the blue laser (excitation light) 10 of the excitation light source, preferably the thickness of the light-emitting layer 11 is greater than 0.15 mm to ensure the light-emitting layer of the present invention made of the phosphor 11
  • the absorption rate of the blue laser 10 from the laser light source can reach 95% or more.
  • the reflection layer 12 is used to reflect the yellow or red fluorescence generated in the light-emitting layer 11.
  • the reflective layer 12 is a gold (Au) reflective layer with a thickness of 80-200 nm. The thickness is too thin to fully reflect the red fluorescence, resulting in a decrease in red light reflectance. Too thick a thickness will cause stress, resulting in a reflective layer and a light-emitting layer The adhesion between them decreases, which also causes the reflectance to decrease.
  • the reflectivity of the gold reflective layer 12 is only greater than 80% for light with a wavelength of 555 nm or more, and greater than 95% for light with a wavelength of 650 nm or more, that is, the gold reflective layer 12 has light with a wavelength of 650 nm or less. Certain absorption, especially for light with a wavelength below 555nm, is more serious. In other words, the absorption of green light, blue light, and violet light by the gold reflective layer 12 is relatively serious.
  • the gold reflective layer 12 can reflect most of the red light, the reflectivity of the red light is higher, the generated heat is lower, and at the same time Compared with the use of silver as the reflective layer in the technology, because gold is not as easy to oxidize and sulfide as silver, it has higher reliability.
  • the excited light generated in the light-emitting layer 11 is yellow light
  • the yellow light generated by the light-emitting layer 11 is broad-spectrum light rather than monochromatic light of a single wavelength, it can be regarded as a mixed light of green light and red light
  • the gold reflection layer 12 has strong absorption to the green light portion and strong reflection to the red light portion
  • the gold reflection layer 12 of the present invention can function as a reflection layer that reflects the red light portion, as well as The green part absorbs so that only the red part reflects the role of the filter.
  • the light-emitting layer 11 of the present invention contains a yellow phosphor with a specific doping concentration as described above, so that the excited light The wavelength is closer to the red light wavelength, reducing the green light component, thereby increasing the proportion of the red light part, reducing the heat generated by the gold reflective layer 12 due to the absorption of green light, and enhancing the exit to the red light part, which both reduces the phosphor
  • the effect of the thermal effect can obtain higher purity red light, and there is no need to use a filter, which reduces the size and cost of the system and realizes a more compact optical structure.
  • the light-emitting layer 11 of the present invention can be constituted by using a yellow phosphor with a certain doping concentration and by using a gold reflective layer as the reflective layer 12 of the present invention, a low thermal effect and a high red light occupation rate can be achieved And a compact light-emitting device.
  • the light-emitting device of the present invention may further include a solder layer 13, wherein the solder layer 13 is disposed between the thermally conductive substrate 14 and the reflective layer 12.
  • the welding layer 13 is used to firmly weld the reflective layer 12 to the thermally conductive substrate 14 to increase the adhesion between the reflective layer 12 and the thermally conductive substrate 14 so that the two are firmly joined.
  • the solder layer 13 may be an alloy solder layer such as gold tin, silver tin, or bismuth tin.
  • a transition layer may be provided between the light-emitting layer 11 and the reflective layer 12 to increase the adhesion between the light-emitting layer 11 and the reflective layer 12.
  • the transition layer may be a nickel layer or a nickel-chromium alloy layer, and the thickness of the transition layer is 2 nm or less. When the thickness of the transition layer is 2 nm or less, the excited light generated in the light-emitting layer 11 can penetrate the transition layer and reach the gold reflective layer 12 to be reflected by the gold reflective layer 12. In order to prevent the excited light generated in the light-emitting layer 11 from further penetrating the gold reflective layer 12, the thickness of the gold reflective layer 12 is set to 80-200 nm to ensure sufficient reflection of the excited light generated in the light-emitting layer 11.
  • Y 3 Al 5 O 12 :Ce 3+ phosphor, (Y,Gd) 3 Al 5 O 12 :Ce 3+ phosphor, ⁇ -SiAlON:Eu 2 that can be excited by blue light with a peak wavelength greater than 555 nm are selected + Any one or more of phosphors and (Sr, Ca) AlSiN 3 :Eu 2+ phosphors are used as the wavelength conversion material of the light-emitting layer 11, and metal gold (Au) is used as the material of the reflective layer 12, the above-mentioned fluorescence Powder and gold respectively constitute the light-emitting layer 11 and the reflective layer 12 of the light-emitting device of the present invention, and then they are bonded to the thermally conductive substrate 14 to constitute the light-emitting device of the present invention.
  • gold Compared with aluminum, gold has a higher reflectivity to the excited red light generated in the light-emitting layer 11, compared with silver, gold has better chemical stability and thermal stability, and gold can be directly welded to a high thermal conductivity On copper heat sinks, and more importantly, gold has a reflectance of more than 80% for fluorescence with an emission wavelength greater than 555 nm, compared with aluminum and silver as reflective metals in the prior art, gold is used as reflective metal in the present invention The high light efficiency and high reliability of the light emitting device can be realized at the same time.
  • the reflectance curve of FIG. 2 it can be seen from the reflectance curve of gold that is not coated on the surface that the absorption effect of the gold layer on light shorter than 555 nm is equivalent to the role of a filter.
  • the gold layer reflects most of the light with a wavelength greater than 555nm, and absorbs most of the light with a wavelength shorter than 555nm.
  • the light-emitting layer 11 made of phosphor with a specific doping concentration as described above can make the excited light generated in the light-emitting layer 11 red-shift, so that the content of green light in the excited light is reduced, so the gold reflective layer 12 The green light absorbed is reduced, and the resulting heat is also reduced, reducing the thermal effect of the phosphor. Therefore, by combining the above-mentioned fluorescent material and the gold reflective layer, it is possible to realize high-intensity red light without the need for a filter, which reduces costs and realizes a more compact optical structure.
  • the light emitting device of the present invention has a red light emitting structure and can emit red light, but the present invention is not limited to this, in addition to the above structure, the light emitting device of the present invention may also include at least one other color
  • the light emitting structure can also emit light of at least one other color.
  • the light-emitting device of the present invention may further include a second light-emitting layer and a second reflective layer, the second light-emitting layer is coplanar with the light-emitting layer 11, the second reflective layer is co-planar with the reflective layer 12, The second reflective layer is disposed below the second light-emitting layer, and the second reflective layer is used to reflect the light emitted by the second light-emitting layer.
  • the second light-emitting layer may be a scattering layer containing only scattering particles. At this time, when the blue laser light 10 is irradiated on the second light-emitting layer, diffuse reflection occurs, thereby emitting blue light.
  • the second light-emitting layer may contain yellow phosphor or green phosphor, and when the blue laser 10 is irradiated on the second light-emitting layer, the second light-emitting layer will absorb the excitation light and emit yellow or green light.
  • the second light-emitting layer may also contain any two of the scattering particles, the yellow phosphor, and the green phosphor, or both.
  • the scattering particles, the yellow phosphor, and the green phosphor are arranged in regions.
  • the second light-emitting layer is formed with three regions respectively enriched with scattering particles, yellow light phosphor and green light phosphor.
  • Example 1 Light-emitting device with fixed red light-emitting module
  • FIG. 3 A schematic diagram of the structure of a light-emitting device with a fixed red light-emitting module according to Embodiment 1 of the present invention is shown in FIG. 3.
  • the fixed red light-emitting module of the light-emitting device is composed of a light-emitting layer 41, a reflective layer 42, a soldering layer 43 and The thermally conductive substrate 44 is configured.
  • the solder layer 43 is provided on the thermally conductive substrate 44.
  • the reflective layer 42 is provided on the solder layer 43.
  • the light emitting layer 41 is provided on the reflective layer 42.
  • the light-emitting layer 41 is specifically composed of a light-emitting ceramic as a light-emitting portion, wherein the light-emitting ceramic is preferably Ce 3+ Y 3 Al 5 O 12 pure phase ceramic or Al 2 O 3 -with a doping concentration of 1.2 mol% Y 3 Al 5 O 12 multiphase ceramics, or (Y, Gd) 3 Al 5 O 12 pure phase ceramics or Al 2 O 3 with Ce 3+ doping concentration greater than 0.5 mol% and Gd 3+ doping concentration greater than 10 mol% -(Y,Gd) 3 Al 5 O 12 multiphase ceramics, or luminescent ceramics are selected as ⁇ -SiAlON:Eu 2+ ceramics or (Sr,Ca)AlSiN 3 :Eu 2+ ceramics.
  • the light-emitting ceramic is preferably Ce 3+ Y 3 Al 5 O 12 pure phase ceramic or Al 2 O 3 -with a doping concentration of 1.2 mol% Y 3 Al 5 O 12 multiphase ceramic
  • the luminescent ceramic After being excited by the blue laser light (excitation light) 45 of the laser light source, the luminescent ceramic emits fluorescence with a dominant wavelength greater than 555 nm.
  • the reflection layer 42 of the light-emitting device is mainly used to reflect the red light (excited light) 46 generated in the light-emitting layer 41 made of the above-mentioned light-emitting ceramics.
  • the reflection layer 42 is made of reflective metal gold (Au).
  • the reflective layer 42 composed of gold has the following advantages: On the one hand, since gold is an inert metal, the thermal stability and chemical stability are stronger, so the reflective layer 42 composed of gold The reliability of use is increased; on the other hand, the reflectivity of gold to light with a wavelength greater than 555nm exceeds 80%, and the reflectance to light with a wavelength of less than 500nm is only about 50%. This selective reflection characteristic makes it reflect light The relative intensity of light with a middle wavelength greater than 555 nm is higher, that is, the brightness of red light in the light emitting device is higher.
  • the solder layer 43 is mainly used to solder the light-emitting layer 41 and the reflective layer 42 to the thermally conductive substrate 44 to facilitate heat transfer of the light-emitting device.
  • the solder of the solder layer 43 is preferably gold-tin, silver-tin, or bismuth-tin alloy.
  • the thermally conductive substrate 44 is mainly used to transfer heat from the light emitting module. It is preferably a copper substrate or a copper substrate plated with nickel and gold on the surface, or may be a nickel gold plated silicon carbide or aluminum nitride substrate.
  • the light emitting device according to Embodiment 1 of the present invention is a light emitting device with high red light emitting efficiency, compact structure, and excellent heat dissipation performance.
  • Embodiment 2 of the present invention (rotating fluorescent color wheel)
  • a rotating fluorescent color wheel is provided, and a schematic structural diagram thereof is shown in FIG. 4.
  • the rotating fluorescent color wheel includes a ring-shaped thermally conductive substrate 55, a welding layer 54, and a reflective layer (including The red light reflection layer 52a, the green light reflection layer 52b, the blue light reflection layer 52c, and the yellow light reflection layer 52d and the light emitting layer (including the red light emitting layer 51a, the green light emitting layer 51b, and the blue light emitted in the same plane Layer 51c and yellow light emitting layer 51d).
  • the solder layer 54 is provided on the thermally conductive substrate 55.
  • the red light reflecting layer 52a, the green light reflecting layer 52b, the blue light reflecting layer 52c, and the yellow light reflecting layer 52d are respectively provided on different parts of the soldering layer 54.
  • the red light emitting layer 51a is provided on the red light reflecting layer 52a.
  • the green light emitting layer 51b, the blue light emitting layer 51c, and the yellow light emitting layer 51d are provided on the green light reflecting layer 52b, the blue light reflecting layer 52c, and the yellow light reflecting layer 52d, respectively.
  • the red light emitting layer 51a and the red light reflecting layer 52a constitute a red light emitting module;
  • the green light emitting layer 51b and the green light reflecting layer 52b constitute a green light emitting module;
  • the blue light emitting layer 51c and the blue light reflecting layer 52c constitute a blue light emitting module;
  • the light emitting layer 51d and the yellow light reflecting layer 52d constitute a yellow light emitting module.
  • the light-emitting part of the rotating fluorescent color wheel is composed of four light-emitting modules of a red light-emitting module, a green light-emitting module, a blue light-emitting module, and a yellow light-emitting module.
  • the four light-emitting modules are separately manufactured, they are bonded to the thermally conductive substrate 55 through the welding layer 54 to form a fluorescent color wheel.
  • the thermally conductive substrate 55 may be aluminum.
  • the light-emitting modules are selected from fluorescent materials that can be excited by the excitation light and generate corresponding color fluorescence.
  • the excitation light is all blue light (for example: blue laser)
  • the blue light-emitting layer 51c may be mainly composed of scattering particles, and the blue light is irradiated on the blue light-emitting layer 51c and then reflected by the scattering particles and the blue light reflecting layer 52c .
  • a green phosphor and a yellow phosphor is used phosphor and red phosphor preferably Ce 3+ doping concentration of 1.2mol% of Y 3 Al 5 O 12, or Ce 3+ doping concentration greater than 0.5mol % And the Gd 3+ ion doping concentration is greater than 10 mol% (Y, Gd) 3 Al 5 O 12 or ⁇ -SiAlON: Eu 2+ or (Sr, Ca) AlSiN 3 : Eu 2+ .
  • the reflective layer of the rotating fluorescent color wheel is made of different materials, of which the red light reflection layer 52a is made of metal gold (Au), and the green light reflection layer 52b, blue light reflection layer 52c and yellow light reflection layer 52d
  • the reflected light has a small thermal effect and is made of metallic silver (Ag).
  • Ag metallic silver
  • the protective material can be metal gold, platinum or Its alloy mainly plays the role of isolating air and water vapor to prevent the silver reflective layer from being sulfided and oxidized.
  • the protective layers 53b, 53c, and 53d are provided at the boundary between the green light reflecting layer 52b, the blue light reflecting layer 52c, and the yellow light reflecting layer 52d, such as the outer edge of the fluorescent color wheel.
  • the soldering layer 54 is mainly used to solder the light-emitting layer, the reflective layer and the protective layer to the thermally conductive substrate 55 to facilitate heat conduction and heat dissipation of the light-emitting module.
  • the soldering layer is preferably composed of gold tin, silver tin or bismuth-tin alloy.
  • the thermally conductive substrate 55 is the heat dissipation part of the color wheel, which is mainly used to conduct the heat in the light emitting layer, so it needs to have good heat dissipation performance.
  • it can be a ceramic thermally conductive substrate such as silicon carbide or aluminum nitride.
  • nickel gold can be plated on the surface of the silicon carbide substrate and the aluminum nitride substrate.
  • the green light-emitting layer 51b uses Lu 3 Al 5 O 12 :Ce 3+ green phosphor with a wavelength of 510 nm
  • the yellow light-emitting layer 51 d uses a wavelength of 540-555 nm Y 3 Al 5 O 12 :Ce 3 + Yellow phosphor
  • red light emitting layer 51a uses Y 3 Al 5 O 12 :Ce 3+ , (Y,Gd) 3 Al 5 O 12 :Ce 3+ or ⁇ -SiAlON:Eu 2+ , whose emission wavelength is longer than 555 nm
  • (Sr,Ca)AlSiN 3 :Eu 2+ phosphor is used, it is possible to realize an efficient and compact fluorescent color wheel structure without modification sheets.
  • the fluorescent color wheel needs to rotate for a long time during use, it has high requirements for the adhesion between the light-emitting layer and the metal reflective layer.

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Abstract

提供了一种发光装置，包括从下到上依次层叠设置的导热基板（14）、反射层（12）和发光层（11），其特征在于：反射层（12）为金反射层，发光层（11）包括Y 3Al 5O 12:Ce 3+荧光粉、(Y,Gd) 3Al 5O 12:Ce 3+荧光粉、α-SiAlON:Eu 2+荧光粉和(Sr,Ca)AlSiN 3:Eu 2+荧光粉中的任意一种或多种，Y 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为1.2mol％以上，(Y,Gd) 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为0.5mol％以上并且Gd 3+的掺杂浓度为10mol％以上。

Description

一种具有高的红光亮度和高的可靠性的发光装置 技术领域
本发明涉及一种具有高的红光亮度和高的可靠性的发光装置。
背景技术
目前，通过激光照射荧光粉来发出相应颜色的光是激光光源领域的常规技术。我们都知道，在激光光源应用于白光照明时，提高激光光源的红光占比可以提高照明的显色指数；在激光光源应用于植物照明时，提高激光光源的红光占比可以有利于光合作用与光周期效应，原因是红光不仅有利于植物碳水化合物的合成，还能加速长日植物的发育；以及在激光显示应用中，提高激光光源的红光占比可以较好地实现色彩还原，解决画面红色偏紫、偏黄的问题。现有技术中提高红光占比的其中一种方法是增加红光光源，例如红光LED或红色激光，但是这种方法所存在的问题也很显著，例如系统体积增加，而且温度对红色激光器的输出功率的限制也很明显，所以增加红光光源的方法具有局限性。现有技术中提高红光占比的另一种方法是采用红色荧光粉，但是红色荧光粉在受到激光照射时由于自身吸收了大量的短波长的光，所以其产生的热量更大，温度效应更为明显，因此通常设计一个具有反射作用的散热组件，例如常用的镜面铝反射层或银反射层，兼具反射和散热效果。然而，铝的反射率较低，产生的热量较高，因此散热效果不够好。另一方面，银反射层的反射率虽然比较高，但是其容易发生氧化和硫化，因而可靠性较低。此外，还存在一种采用长波长黄光结合滤光片来产生红光的方法，其中采用热稳定性好且光饱和性能较好的YAG:Ce 3+体系的长波长黄光，由于黄光光源的热效应比红光光源的热效应小，所以这种方法产生的红光亮度和效率比较好，但是由于采用了滤光片，导致提升了成本的同时，结构也不紧凑。由此可见，现有技术中的产生红光的激光荧光光源要么是 成本高并且结构不紧凑，要么就是其红光效率和亮度较低，制约了其激光显示产品的亮度和色域的提升。
因此，有待于提供一种具有高的红光亮度和高的可靠性的发光装置，使得可以显著提升其激光显示产品的激光显示的亮度和色域。
发明内容
有鉴于此，本发明旨在提供一种红光发光效率高、结构紧凑、成本较低并且散热性能优良的发光装置。
根据本发明的一方面，提供了一种发光装置，包括从下到上依次层叠设置的导热基板、反射层和发光层，其中，所述反射层为金反射层，所述发光层包括Y 3Al 5O 12:Ce 3+荧光粉、(Y,Gd) 3Al 5O 12:Ce 3+荧光粉、α-SiAlON:Eu 2+荧光粉和(Sr,Ca)AlSiN 3:Eu 2+荧光粉中的任意一种或多种，所述Y 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为1.2mol％以上，所述(Y,Gd) 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为0.5mol％以上并且Gd 3+的掺杂浓度为10mol％以上。
进一步地，所述发光装置还包括过渡层，所述过渡层设置在所述发光层和所述反射层之间，并且所述过渡层由镍或者镍铬合金制成。
进一步地，所述过渡层的厚度为小于2nm。
进一步地，所述发光装置还包括焊接层，所述焊接层设置在所述反射层与所述导热基板之间，所述焊接层用于将所述反射层与所述导热基板牢固接合。
进一步地，所述焊接层为选自金锡、银锡、铋锡的合金焊料层。
进一步地，所述导热基板选自铜基板、表面镀镍金的铜基板或者表面镀镍金的碳化硅、氮化铝基板。
进一步地，所述金反射层的厚度为80-200nm。
进一步地，所述发光层为荧光陶瓷或荧光玻璃。
进一步地，所述荧光陶瓷为以下陶瓷中的任一种：Y 3Al 5O 12:Ce 3+荧光粉或(Y,Gd) 3Al 5O 12:Ce 3+荧光粉的纯相陶瓷；Al 2O 3、Y 2O 3、Mg 2AlO 4 分别与Y 3Al 5O 12:Ce 3+荧光粉或(Y,Gd) 3Al 5O 12:Ce 3+荧光粉形成的复相陶瓷；α-SiAlON:Eu 2+荧光粉或(Sr,Ca)AlSiN 3:Eu 2+荧光粉的纯相陶瓷；以及α-SiAlON:Eu 2+荧光粉或(Sr,Ca)AlSiN 3:Eu 2+荧光粉与氟化物形成的复相陶瓷。
进一步地，所述发光装置还包括至少一个第二发光层和至少一个第二反射层，所述第二发光层与所述发光层共平面设置，所述第二反射层与所述反射层共平面设置，且所述第二反射层设置在所述第二发光层下方，用于反射所述第二发光层发出的光。
进一步地，所述第二发光层包括散射粒子、黄光荧光粉、绿光荧光粉中的至少一种。
进一步地，所述第二反射层为银反射层或无机漫反射层。
进一步地，在所述第二反射层的下方设置有由金、铂或者其合金制成的保护层，以保护所述第二反射层免受硫化和氧化。
有益效果
本发明提供了一种发光装置，所述发光装置包括从下到上依次层叠设置的导热基板、反射层和发光层，其中，所述反射层为金反射层，所述发光层包括Y 3Al 5O 12:Ce 3+荧光粉、(Y,Gd) 3Al 5O 12:Ce 3+荧光粉、α-SiAlON:Eu 2+荧光粉和(Sr,Ca)AlSiN 3:Eu 2+荧光粉中的任意一种或多种，所述Y 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为1.2mol％以上，所述(Y,Gd) 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为0.5mol％以上并且Gd 3+的掺杂浓度为10mol％以上。与现有技术中使用银作为反射层相比，由于金不像银那样易于氧化和硫化，因此本发明中使用金作为反射层的发光装置的可靠性较高。另外，本发明的金反射层仅对波长为555nm以上的光的反射率大于80％，对波长为650nm以上的光的反射率大于95％，即金反射层12对波长为650nm以下的光具有一定的吸收，尤其是对波长为555nm以下的光吸收较为严重。也就是说，本发明的金反射层具有选择性地反射红光以及吸收绿光、蓝光和紫光的功能，在不使用滤色片的情况下也能仅反射红光，简化了结构并节省了成本。此外，本发明的发光装置的发光层中具有特定的掺杂浓度的荧光粉使得受激发光的波长向红 光波长靠近，提高了红光占比的同时减少了金反射层吸收绿光等而导致的热效应。因此本发明的发光装置具有高的红光亮度和高的可靠性，并且在降低了成本的同时，也可以实现更为紧凑的光学结构。
附图说明
附图表示本文所述的非限制性示例性实施例。本领域技术人员将要理解的是，附图不一定按比例绘制，而是用于重点说明本发明的原理。在附图中：
图1是根据本发明的发光装置的示意图。
图2是示出了几种金属材料在不同波长范围的光下的反射率的曲线图。
图3是根据本发明实施例1的发光装置的结构示意图。
图4是根据本发明实施例2的转动式色轮结构的示意图和截面示意图。
附图标记列表：
10,45：激发光
11,41：发光层
14,44,55：导热基板
15,46：受激发光
12,42：反射层
13,43,54：焊接层
51a：红光发光层
51b：绿光发光层
51c：蓝光发光层
51d：黄光发光层
52a：红光反射层
52b：绿光反射层
52c：蓝光反射层
52d：黄光反射层
53b,53c,53d：保护层
具体实施方式
以下，参照附图更全面地说明本发明的一个或多个示例性实施例，在附图中，本领域技术人员能够容易地确定本发明的一个或多个示例性实施例。如本领域技术人员应认识到的，只要不脱离本发明的精神或范围，可以以各种不同的方式对所述示例性实施例进行修改，本发明的精神或范围不限于本文所述的示例性实施例。
现在参照附图对本发明进行详细说明。
如图1所示，本发明提供了一种发光装置，该发光装置包括从下到上依次层叠设置的导热基板14、反射层12和发光层11。导热基板14具有高的导热性，优选为铜基板或者表面镀镍金的铜基板，也可以是镀镍金的碳化硅(SiC)或氮化铝(AlN)基板。
发光层11可以是发光峰值波长大于555nm的Y 3Al 5O 12:Ce 3+荧光粉或(Y,Gd) 3Al 5O 12:Ce 3+荧光粉的纯相陶瓷，或者是Al 2O 3、Y 2O 3、Mg 2AlO 4分别与发光峰值波长大于555nm的Y 3Al 5O 12:Ce 3+荧光粉或(Y,Gd) 3Al 5O 12:Ce 3+荧光粉形成的复相陶瓷，也可以是α-SiAlON:Eu 2+荧光粉的纯相陶瓷或(Sr,Ca)AlSiN 3:Eu 2+荧光粉的纯相陶瓷或其与氟化钙、氟化镁等氟化物形成的复相陶瓷，还可以是上述这些荧光粉与玻璃粉混合烧结所形成的荧光玻璃。进一步地，Y 3Al 5O 12:Ce 3+中Ce 3+的掺杂浓度为1.2mol％以上，(Y,Gd) 3Al 5O 12:Ce 3+中Ce 3+的掺杂浓度为0.5mol％以上并且Gd 3+的掺杂浓度为10mol％以上。Ce 3+在Y 3Al 5O 12中的掺杂浓度越高，Y 3Al 5O 12的发光波长越长，Ce 3+的掺杂浓度为1.2mol％时，Y 3Al 5O 12的发光峰值波长为555nm，而Gd 3+在(Y,Gd) 3Al 5O 12中的掺杂浓度越高，(Y,Gd) 3Al 5O 12的发光波长也越长，Ce 3+的掺杂浓度为0.5mol％并且Gd 3+的掺杂浓度为10mol％时，(Y,Gd) 3Al 5O 12的发光峰值波长为555nm。发光层11受到激发光光源的蓝色激光(激发光)10的激发之后可以产生黄色或 红色荧光，优选发光层11的厚度大于0.15mm，以保证由上述荧光粉制成的本发明的发光层11对来自激光光源的蓝色激光10的吸收率能够达到95％以上。
反射层12用于对在发光层11中产生的黄色或红色荧光进行反射。反射层12为金(Au)反射层，其厚度为80-200nm，厚度太薄，不能对红色荧光进行充分反射，导致红光反射率下降，厚度太厚会产生应力，导致反射层与发光层之间的附着力下降，从而也会导致反射率下降。需要说明的是，金反射层12仅对波长为555nm以上的光的反射率大于80％，对波长为650nm以上的光的反射率大于95％，即金反射层12对波长为650nm以下的光具有一定的吸收，尤其是对波长为555nm以下的光吸收较为严重。也就是说，金反射层12对绿光、蓝光和紫光的吸收是比较严重的。当在发光层11中产生的受激发光是红光时，金反射层12能够将绝大部分的红光进行反射，对红光的反射率较高，产生的热量较低，同时与现有技术中使用银作为反射层相比，由于金不像银那样易于氧化和硫化，因此可靠性较高。当在发光层11中产生的受激发光是黄光时，由于发光层11产生的黄光是宽谱光，而非单一波长的单色光，可视为绿光和红光的混合光，而又由于金反射层12对绿光部分具有强吸收并对红光部分具有强反射，所以本发明的金反射层12既能够起到对红光部分进行反射的反射层的作用，也能够起到对绿光部分进行吸收使得仅反射红光部分的滤光片的作用。另外，为了提高红光占比以及为了减小由于金反射层12吸收大量绿光而导致的热效应，本发明的发光层11含有如上所述具有特定掺杂浓度的黄色荧光粉，使得受激发光的波长向红光波长靠近，减少绿光的成份，从而提高红光部分的比例，减少金反射层12由于吸收绿光而产生的热量，增强对红光部分的出射，既起到降低荧光粉的热效应的作用，又可以获得较高纯度的红光，而且不必使用滤光片，降低了系统的体积和成本，实现了更为紧凑的光学结构。也就是说，在本发明中，可以通过使用具有一定掺杂浓度的黄色荧光粉来构成本发明的发光层11并且通过使用金反射层作为本发明的反射层12，可以实现低热效应、高红光占比以及结构紧凑的发光装置。
另外，如图1所示，在本发明的发光装置中还可以包括焊接层13，其中该焊接层13设置在导热基板14与反射层12之间。焊接层13用于将反射层12牢固焊接到导热基板14上，以增加反射层12与导热基板14之间的附着力而使得二者牢固接合。焊接层13可以为金锡、银锡、铋锡等合金焊料层。
此外，在发光层11与反射层12之间可以设置过渡层，以增加发光层11与反射层12之间的附着力。该过渡层可以为镍层或者镍铬合金层，过渡层的厚度为2nm以下。当过渡层的厚度为2nm以下时，发光层11中产生的受激发光可以穿透过渡层并到达金反射层12，从而被金反射层12反射。为了防止发光层11中产生的受激发光进一步穿透金反射层12，将金反射层12的厚度设定为80-200nm以确保对发光层11中产生的受激发光进行充分反射。
本发明选用可以被蓝光激发的发光峰值波长大于555nm的Y 3Al 5O 12:Ce 3+荧光粉、(Y,Gd) 3Al 5O 12:Ce 3+荧光粉、α-SiAlON:Eu 2+荧光粉和(Sr,Ca)AlSiN 3:Eu 2+荧光粉中的任意一种或多种作为发光层11的波长转换材料，并且采用金属金(Au)作为反射层12的材料，上述荧光粉和金分别构成本发明的发光装置的发光层11及反射层12，而后将其接合在导热基板14上，从而构成本发明的发光装置。与铝相比，金对发光层11中产生的受激发红光的反射率较高，与银相比，金具有更好的化学稳定性和热稳定性，并且金可以直接焊接到高导热的铜散热器上，以及更为重要地，金对发光波长大于555nm的荧光的反射率在80％以上，与现有技术中将铝及银作为反射金属相比，本发明中将金作为反射金属可以同时实现发光装置的高光效及高可靠性。
另一方面，参见图2的反射率曲线，由表面没有镀层的金的反射率曲线可知，金层对于波长短于555nm的光的吸收作用相当于一个滤光片的作用。也就是说，金层将波长大于555nm的光大部分反射回去，而将波长短于555nm的光大部分吸收。在本发明中通过如上所述的特定掺杂浓度的荧光粉制成的发光层11可以使得发光层11中产生的受激发光红移，使得受激发光中绿光含量减少，于是金反射层12吸收的绿光减少，由此产生的热量也减少，降低了荧光粉的热效应。因此，通过上述这种 荧光材料和金反射层相配合的方式能够在不需要滤光片的情况下，实现高亮度红光，降低了成本的同时，也可以实现更为紧凑的光学结构。
在上述说明中，仅描述了本发明的发光装置具有红光发光结构，能够发出红光，但是本发明不限于此，除了上述结构之外，本发明的发光装置还可以包括至少一个其他颜色的发光结构，还能够发出至少一种其他颜色的光。例如，本发明的发光装置还可以包括一个第二发光层和一个第二反射层，该第二发光层与上述发光层11共平面设置，该第二反射层与上述反射层12共平面设置，且第二反射层设置在第二发光层下方，第二反射层用于反射第二发光层发出的光。该第二发光层可以是只包含散射粒子的散射层，此时当蓝色激光10照射在第二发光层上时会发生漫反射，从而发出蓝光。可选择地，第二发光层可以包含黄色荧光粉或绿色荧光粉，此时当蓝色激光10照射在第二发光层上时，第二发光层会吸收激发光并发出黄色光或绿色光。当然，第二发光层也可以同时包含散射粒子、黄色荧光粉和绿色荧光粉中的任意两种或者同时包含这三种，此时优选分区域设置散射粒子、黄色荧光粉和绿色荧光粉。也就是说，第二发光层形成有分别富集散射粒子、黄光荧光粉和绿光荧光粉的三个区域，当蓝色激光10分别照射在上述三个区域时，将分别发出蓝光、黄光和绿光。
下面参照本发明的具体实施例进行说明。
实施例1(具有固定式红光发光模块的发光装置)
根据本发明实施例1的具有固定式红光发光模块的发光装置的结构的示意图如图3所示，该发光装置的固定式红光发光模块由发光层41、反射层42、焊接层43和导热基板44构成。焊接层43设置在导热基板44上。反射层42设置在焊接层43上。发光层41设置在反射层42上。在本实施例中，发光层41具体由作为发光部分的发光陶瓷构成，其中发光陶瓷优选为Ce 3+掺杂浓度为1.2mol％的Y 3Al 5O 12纯相陶瓷或Al 2O 3-Y 3Al 5O 12复相陶瓷，或者Ce 3+掺杂浓度大于0.5mol％并且Gd 3+掺杂浓度大于10mol％的(Y,Gd) 3Al 5O 12纯相陶瓷或Al 2O 3-(Y,Gd) 3Al 5O 12复相陶瓷，又或者发光陶瓷选择为α-SiAlON:Eu 2+陶瓷或(Sr,Ca)AlSiN 3:Eu 2+陶瓷。该发光陶瓷受到激光光源的蓝色激光(激发光)45的激发之后，发 射主波长大于555nm的荧光。该发光装置的反射层42主要用于对由上述发光陶瓷制成的发光层41中产生的红光(受激发光)46起反射作用，该反射层42由反射金属金(Au)构成。
如上所述，与银反射层相比，由金构成的反射层42具有以下优点：一方面，由于金为惰性金属，热稳定性及化学稳定性更强，所以由金构成的反射层42的使用可靠性增加；另一方面，金对波长大于555nm的光的反射率超过80％，而对波长低于500nm的光的反射率只有50％左右，这种选择性反射的特性使得其反射光中波长大于555nm的光的相对强度更高，也就是说，发光装置中红光的亮度更高。焊接层43主要是用于将发光层41和反射层42与导热基板44焊合，使得易于发光装置的热量的传递，焊接层43的焊料优选为金锡、银锡、铋锡合金。导热基板44主要是用于将发光模块中的热量传递出去，其优选为铜基板或者表面镀镍金的铜基板，也可以是镀镍金的碳化硅或氮化铝基板。
根据本发明实施例1的发光装置为红光发光效率高、结构紧凑并且散热性能优良的发光装置。
本发明的实施例2(转动式荧光色轮)
在根据本发明的实施例2中，提供了一种转动式荧光色轮，其结构示意图如图4所示，该转动式荧光色轮包括环形的导热基板55、焊接层54、反射层(包括共平面设置的红光反射层52a、绿光反射层52b、蓝光反射层52c和黄光反射层52d)和发光层(包括共平面设置的红光发光层51a、绿光发光层51b、蓝光发光层51c和黄光发光层51d)。焊接层54设置于导热基板55上。红光反射层52a、绿光反射层52b、蓝光反射层52c和黄光反射层52d分别设置在焊接层54的不同部分上。红光发光层51a设置于红光反射层52a上。绿光发光层51b、蓝光发光层51c和黄光发光层51d分别设置在绿光反射层52b、蓝光反射层52c和黄光反射层52d上。红光发光层51a与红光反射层52a构成红光发光模块；绿光发光层51b与绿光反射层52b构成绿光发光模块；蓝光发光层51c与蓝光反射层52c构成蓝色发光模块；黄光发光层51d与黄光反射层52d构成黄光发光模块。
在本实施例中，转动式荧光色轮的发光部分是由红光发光模块、绿光发光模块、蓝光发光模块和黄光发光模块四个发光模块构成的。四个发光模块单独制作后通过焊接层54粘接到导热基板55上以形成荧光色轮，该导热基板55可以为铝。发光模块均选用可被激发光激发、产生相应颜色荧光的荧光材料，例如，可以选用玻璃封装的红色荧光粉、绿色荧光粉、蓝色荧光粉以及黄色荧光粉或者由这些荧光粉烧结而成的荧光陶瓷。需要具体说明的是，当激发光全部为蓝光(例如：蓝激光)时，蓝光发光层51c可主要由散射粒子构成，蓝光照射在蓝光发光层51c上后被散射粒子和蓝光反射层52c所反射。此种情况下，绿色荧光粉以及黄色荧光粉为常用荧光粉，而红色荧光粉优选为Ce 3+掺杂浓度为1.2mol％的Y 3Al 5O 12或者Ce 3+掺杂浓度大于0.5mol％并且Gd 3+离子掺杂浓度大于10mol％的(Y,Gd) 3Al 5O 12，又或者是α-SiAlON:Eu 2+或(Sr,Ca)AlSiN 3:Eu 2+。
该转动式荧光色轮的反射层由不同的材料制成，其中红光反射层52a由金属金(Au)制成，而绿光反射层52b、蓝光反射层52c和黄光反射层52d由于其反射光的热效应较小而由金属银(Ag)制成。此外，由于银性质不稳定，在空气中易被硫化和氧化，因而需要在其外层包裹一层保护材料作为银层的保护层53b、53c以及53d，该保护材料可以选用金属金、铂或者其合金，主要起隔绝空气及水蒸气作用，防止银反射层被硫化和氧化。具体地，保护层53b、53c以及53d设置在绿光反射层52b、蓝光反射层52c和黄光反射层52d与空气的交界处，例如荧光色轮的外沿。焊接层54主要用于将发光层、反射层及保护层与导热基板55焊合起来，使得易于发光模块导热散热，该焊接层优选由金锡、银锡或者铋锡合金构成。导热基板55为色轮的散热部分，主要是用于将发光层中的热量传导出去，因而需要其具有较好的散热性能，例如，可以为碳化硅或氮化铝等陶瓷导热基板，进一步地，为了提高粘接和散热效果，可以在碳化硅基板和氮化铝基板表面镀镍金。
特别地，当绿光发光层51b采用发光波长为510nm的Lu 3Al 5O 12:Ce 3+绿色荧光粉，黄光发光层51d采用发光波长为540～555nm Y 3Al 5O 12:Ce 3+黄色荧光粉，红光发光层51a采用发光波长长于555nm的Y 3Al 5O 12:Ce 3+、 (Y,Gd) 3Al 5O 12:Ce 3+或者α-SiAlON:Eu 2+、(Sr,Ca)AlSiN 3:Eu 2+荧光粉时，能够实现无修饰片的高效紧凑的荧光色轮结构。
由于荧光色轮在使用时需要长时间转动，因此对发光层和金属反射层之间的附着力有着较高的要求，此时优选在发光层与金属反射层之间设置可提高两者附着力的过渡层，如镍层或者镍铬合金层，该过渡层厚度小于2nm。
使用根据本发明实施例2的转动式荧光色轮能够得到红光发光效率高、高效紧凑的发光装置。
本发明所列举的各原料，以及本发明各原料的上下限、工艺参数的上下限、区间取值都能实现本发明，在此不一一列举实施例；凡是依据本发明的技术实质对以上实施例所作的任何简单修改或等同变化，均仍属于本发明的技术方案的范围之内。

Claims (13)

  1. 一种发光装置，包括从下到上依次层叠设置的导热基板、反射层和发光层，其特征在于：所述反射层为金反射层，所述发光层包括Y 3Al 5O 12:Ce 3+荧光粉、(Y,Gd) 3Al 5O 12:Ce 3+荧光粉、α-SiAlON:Eu 2+荧光粉和(Sr,Ca)AlSiN 3:Eu 2+荧光粉中的任意一种或多种，所述Y 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为1.2mol％以上，所述(Y,Gd) 3Al 5O 12:Ce 3+荧光粉中的Ce 3+的掺杂浓度为0.5mol％以上并且Gd 3+的掺杂浓度为10mol％以上。
  2. 如权利要求1所述的发光装置，其特征在于，还包括过渡层，所述过渡层设置在所述发光层和所述反射层之间，并且所述过渡层由镍或者镍铬合金制成。
  3. 如权利要求2所述的发光装置，其特征在于所述过渡层的厚度为小于2nm。
  4. 如权利要求1所述的发光装置，其特征在于，还包括焊接层，所述焊接层设置在所述反射层与所述导热基板之间，所述焊接层用于将所述反射层与所述导热基板牢固接合。
  5. 如权利要求4所述的发光装置，其特征在于，所述焊接层为选自金锡、银锡、铋锡的合金焊料层。
  6. 如权利要求5所述的发光装置，其特征在于，所述导热基板选自铜基板、表面镀镍金的铜基板或者表面镀镍金的碳化硅、氮化铝基板。
  7. 如权利要求1所述的发光装置，其特征在于，所述金反射层的厚度为80-200nm。
  8. 如权利要求1所述的发光装置，其特征在于，所述发光层为荧光陶瓷或荧光玻璃。
  9. 如权利要求7所述的发光装置，其特征在于，所述荧光陶瓷为以下陶瓷中的任一种：Y 3Al 5O 12:Ce 3+荧光粉或(Y,Gd) 3Al 5O 12:Ce 3+荧光粉的纯相陶瓷；Al 2O 3、Y 2O 3、Mg 2AlO 4分别与Y 3Al 5O 12:Ce 3+荧光粉或(Y,Gd) 3Al 5O 12:Ce 3+荧光粉形成的复相陶瓷；α-SiAlON:Eu 2+荧光粉或(Sr,Ca)AlSiN 3:Eu 2+荧光粉的纯相陶瓷；以及α-SiAlON:Eu 2+荧光粉或(Sr,Ca)AlSiN 3:Eu 2+荧光粉与氟化物形成的复相陶瓷。
  10. 如权利要求1～9中任一项所述的发光装置，其特征在于，还包括至少一个第二发光层和至少一个第二反射层，所述第二发光层与所述发光层共平面设置，所述第二反射层与所述反射层共平面设置，且所述第二反射层设置在所述第二发光层下方，用于反射所述第二发光层发出的光。
  11. 如权利要求10所述的发光装置，其特征在于，所述第二发光层包括散射粒子、黄光荧光粉、绿光荧光粉中的至少一种。
  12. 如权利要求11所述的发光装置，其特征在于，所述第二反射层为银反射层或无机漫反射层。
  13. 如权利要求12所述的发光装置，其特征在于，在所述第二反射层的下方设置有由金、铂或者其合金制成的保护层，以保护所述第二反射层免受硫化和氧化。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114276024A (zh) * 2021-12-13 2022-04-05 厦门大学 一种高显色复合荧光玻璃及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130445A (en) * 1998-12-02 2000-10-10 Arima Optoelectronics Corporation LED with AlGaInP Bragg layer
US20090289545A1 (en) * 2008-05-26 2009-11-26 Soshchin Naum Warm-White Light-Emitting Diode and Its Phosphor Powder
CN102208521A (zh) * 2004-06-03 2011-10-05 皇家飞利浦电子股份有限公司 用于发光器件的发光陶瓷
CN102517017A (zh) * 2011-12-09 2012-06-27 苏州晶能科技有限公司 荧光粉及其制备方法和含该荧光粉的白光led平面光源
CN103045259A (zh) * 2012-12-20 2013-04-17 华东师范大学 氧氮化物荧光粉及其制备方法、及包含该荧光粉的led光源
CN203607398U (zh) * 2013-10-25 2014-05-21 广东德力光电有限公司 一种高显色性白光led结构

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2609527A1 (fr) * 1987-01-12 1988-07-15 Rochefort Hugues De Luminaire halogene (classe ii)
JP5283293B2 (ja) * 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP4874510B2 (ja) * 2003-05-14 2012-02-15 日亜化学工業株式会社 発光装置及びその製造方法
CN100428512C (zh) * 2005-01-31 2008-10-22 东芝照明技术株式会社 发光二极管装置
DE102005020908A1 (de) * 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Beleuchtungsvorrichtung
JP4905009B2 (ja) * 2006-09-12 2012-03-28 豊田合成株式会社 発光装置の製造方法
JP4983347B2 (ja) * 2007-04-03 2012-07-25 ソニー株式会社 発光装置及び光源装置
JP5584645B2 (ja) * 2011-03-31 2014-09-03 株式会社沖データ 半導体発光装置およびヘッドマウントディスプレイ装置
CN102522476B (zh) * 2011-12-23 2014-03-12 泉州万明光电有限公司 一种高效发光二极体光源的封装结构
CN104566230B (zh) * 2013-10-15 2017-07-11 深圳市光峰光电技术有限公司 波长转换装置及其光源系统、投影系统
CN104595852B (zh) * 2013-10-30 2016-08-24 深圳市绎立锐光科技开发有限公司 一种波长转换装置、漫反射层、光源系统及投影系统
KR101504168B1 (ko) * 2013-11-15 2015-03-20 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛 및 조명 장치
CN203907471U (zh) * 2014-01-21 2014-10-29 深圳市动盈化工有限公司 一种设置有能提高led灯显色指数的led灯罩
CN105805699B (zh) * 2014-12-30 2019-01-08 深圳市光峰光电技术有限公司 波长转换装置的制备方法
CN104913224A (zh) * 2015-07-07 2015-09-16 宏齐光电子(深圳)有限公司 一种led光源及led灯
CN205424548U (zh) * 2016-01-08 2016-08-03 深圳慧盈生态科技有限公司 一种植物生长led灯条及组合灯条
JP2018049981A (ja) * 2016-09-23 2018-03-29 スタンレー電気株式会社 半導体発光装置、および、その製造方法
EP3555690A1 (en) * 2016-12-16 2019-10-23 Lumileds Holding B.V. Light conversion device with angular and wavelength selective coating
CN108930919B (zh) * 2017-05-19 2022-08-12 深圳光峰科技股份有限公司 一种波长转换装置及其制备方法、光源
CN207164363U (zh) * 2017-07-25 2018-03-30 深圳市光峰光电技术有限公司 色轮及应用所述色轮的光源系统、投影系统

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130445A (en) * 1998-12-02 2000-10-10 Arima Optoelectronics Corporation LED with AlGaInP Bragg layer
CN102208521A (zh) * 2004-06-03 2011-10-05 皇家飞利浦电子股份有限公司 用于发光器件的发光陶瓷
US20090289545A1 (en) * 2008-05-26 2009-11-26 Soshchin Naum Warm-White Light-Emitting Diode and Its Phosphor Powder
CN102517017A (zh) * 2011-12-09 2012-06-27 苏州晶能科技有限公司 荧光粉及其制备方法和含该荧光粉的白光led平面光源
CN103045259A (zh) * 2012-12-20 2013-04-17 华东师范大学 氧氮化物荧光粉及其制备方法、及包含该荧光粉的led光源
CN203607398U (zh) * 2013-10-25 2014-05-21 广东德力光电有限公司 一种高显色性白光led结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114276024A (zh) * 2021-12-13 2022-04-05 厦门大学 一种高显色复合荧光玻璃及其制备方法
CN114276024B (zh) * 2021-12-13 2022-08-23 厦门大学 一种高显色复合荧光玻璃及其制备方法

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