WO2020134332A1 - 太赫兹混频器及其制造方法及包括该混频器的电子设备 - Google Patents

太赫兹混频器及其制造方法及包括该混频器的电子设备 Download PDF

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WO2020134332A1
WO2020134332A1 PCT/CN2019/110360 CN2019110360W WO2020134332A1 WO 2020134332 A1 WO2020134332 A1 WO 2020134332A1 CN 2019110360 W CN2019110360 W CN 2019110360W WO 2020134332 A1 WO2020134332 A1 WO 2020134332A1
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trench
microstrip line
metal layer
substrate
forming
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French (fr)
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李元景
胡海帆
赵自然
马旭明
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Tsinghua University
Nuctech Co Ltd
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Tsinghua University
Nuctech Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/213—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies
    • H01P1/2135—Frequency-selective devices, e.g. filters combining or separating two or more different frequencies using strip line filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/007—Manufacturing frequency-selective devices

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  • the present disclosure relates to the field of communications, and in particular, to a terahertz mixer, a method of manufacturing the same, and an electronic device including the mixer.
  • terahertz technology As an important research field, has received more and more attention at home and abroad. It can be seen from the atmospheric transmission characteristics of terahertz waves that there are water molecule absorption windows near 183GHz, 320GHz, 380GHz, and 664GHz, which are the key frequency bands used to detect the atmospheric humidity contour; millimeter wave propagation at 94GHz, 140GHz, and 220GHz is The attenuation is small, and it is used by low-altitude air-to-surface missiles and ground-based radars based on point-to-point communication. Therefore, the research on these frequency bands is very important.
  • the mixer that realizes the frequency down conversion is one of them.
  • a key component In solid-state terahertz radar and communication systems, the mixer becomes the first stage at the receiving end due to the difficulty in implementing low-noise amplifiers. Therefore, the performance of the mixer is directly related to the performance of the entire receiver system. At the same time, due to the difficulty of realizing high-performance local oscillator sources in the same frequency band, the use of subharmonic mixing technology is an effective way to solve this problem.
  • one of the main receiver solutions at present is a superheterodyne receiver, especially when the frequency is higher than 200GHz, the conversion loss of the mixer based on the silicon-based CMOS process and the silicon-germanium CMOS process Larger and unsuitable for applications, so it still mainly relies on terahertz sub-harmonic mixers of planar packaged GaAs Schottky diodes.
  • the schemes of the terahertz sub-harmonic mixer of the planar encapsulated gallium arsenide Schottky diode in the prior art mainly include the following:
  • the scheme 1 is to flip-chip bond the gallium arsenide Schottky diode on the quartz substrate.
  • the periphery is a metal cavity.
  • This scheme is simple and easy to implement, but the disadvantages are also obvious.
  • Schottky diode flip-chip bonding needs to be bound by conductive glue or gold wire, and the alignment accuracy between it and the microstrip line is not easy to control. There is also an alignment error in the assembly of the quartz microstrip line and the metal cavity.
  • Option 2 is a monolithic integrated second harmonic mixer link structure based on gallium arsenide (Schottky diodes and microstrip lines are processed simultaneously with gallium arsenide substrates), and the periphery is a metal cavity.
  • This solution can avoid the alignment problem of the diode and the microstrip line, but there are also alignment errors in the assembly of the gallium arsenide-based microstrip line and the metal cavity.
  • the overall processing cost is relatively high compared to Option 1.
  • Option 3 is to use silicon-based micro-mechanical technology to process the cavity structure. Schottky diodes and microstrip lines still use the conventional methods in options 1 and 2. This solution can reduce the overall weight of the mixer, and at the same time can ensure the size of the cavity, but the alignment problem between the microstrip line and the cavity structure has not yet been well resolved.
  • an object of the present disclosure is at least partly to provide a terahertz mixer capable of ensuring the alignment accuracy between the microstrip line and the cavity, a method for manufacturing the same, and a terahertz mixer Electronic device.
  • a terahertz mixer including: a cavity for forming an RF input waveguide and a local oscillator input waveguide, and a cavity for accommodating suspended microstrip lines on the inside surface of the cavity A step is formed; a suspended microstrip line is formed by a semiconductor growth process and bridged over at least a part of the step, the suspended microstrip line respectively extends into the cavity where the RF input waveguide and the local oscillator input waveguide are located, to form separate A microstrip antenna that receives radio frequency input signals and local oscillator input signals.
  • a method of manufacturing a terahertz mixer including: forming a trench structure on a silicon substrate or a gallium arsenide substrate, the trench structure including a step; and forming a trench structure on the silicon substrate or gallium arsenide A metal layer is formed on the inner surface of the substrate and the sidewall of the trench; a suspended microstrip line is formed across at least a portion of the step.
  • an electronic device including an integrated circuit formed by the terahertz mixer described above.
  • a dielectric substrate that forms a suspended microstrip line by directly growing in a mixing cavity is used, and the size of the dielectric substrate (that is, the silicon dioxide substrate) and the metal layer are determined by photolithography and etching processes And position, so as to ensure the alignment accuracy of the suspended microstrip line and the cavity, and improve the working performance of the suspended microstrip line mixer. Since the dielectric substrate of the suspended microstrip line grows directly in the mixing cavity, it forms good contact with the metal layer at the bottom, avoiding the current uneven application of conductive silver glue or the existence of bubbles, etc., and ensuring the processing of the mixer The controllability of the process improves the working performance of the suspended microstrip line mixer. At the same time, since most of the suspended microstrip lines in the suspended state are used, they have a higher Q value than the conventional microstrip lines, which is close to no dispersion.
  • FIG. 1 shows a schematic structural diagram of a terahertz mixer according to an embodiment of the present disclosure
  • FIG. 2a and 2b show example cross-sectional views according to an embodiment of the present disclosure taken along A-A' in FIG. 1;
  • FIG. 3 shows an example cross-sectional view taken along B-B' in FIG. 1 according to an embodiment of the present disclosure
  • FIG. 4a and 4b show another example cross-sectional view taken along A-A' in FIG. 1 according to an embodiment of the present disclosure
  • FIG. 5 shows another example cross-sectional view taken along B-B' of FIG. 1 according to an embodiment of the present disclosure
  • 6a to 6d are schematic diagrams showing the flow of manufacturing a terahertz mixer according to an embodiment of the present disclosure.
  • FIG. 7 shows a partially enlarged view of a Schottky diode according to an embodiment of the present disclosure.
  • the terahertz mixer mainly uses a silicon-based micro-nano machining process and a micro-machining process to realize a terahertz monolithic integrated suspension microstrip line mixer.
  • the suspended microstrip line mixer is similar in structure to the conventional microstrip line mixer, except that most of the microstrip line is suspended at the bottom, and the dielectric substrate is suspended in the air without contacting the ground, so its electromagnetic field Usually in air, the medium has little effect, its effective dielectric constant is close to 1, so that its characteristic parameters are close to those in air, the loss in the line is greatly reduced, and it has a higher Q value than the conventional microstrip line. Close to no dispersion.
  • An example of the overall structure of the terahertz mixer is shown in FIG. 1.
  • the terahertz mixer is a monolithic integrated suspended microstrip line mixer, which mainly includes a cavity structure and a suspended microstrip line circuit structure.
  • the cavity is used to form an RF input waveguide and a local oscillator input waveguide, respectively, and to accommodate a suspended microstrip line, and a step is formed on the inner surface of the cavity to support the dielectric substrate of the suspended microstrip line.
  • a cavity structure with a metal layer on the surface, a radio frequency input waveguide structure 101 and a local oscillator input waveguide structure 102 are composed of a silicon base (which may also be a gallium arsenide base, embodiments of the present disclosure are not limited thereto).
  • a suspended microstrip line circuit structure is placed in the cavity surrounded by the metal layer.
  • the suspended microstrip line circuit structure is formed by a semiconductor growth process and is bridged over at least a part of the step, so most of the structure of the suspended microstrip line is in a suspended state.
  • a part of the suspended microstrip line circuit respectively extends into the cavity where the radio frequency input waveguide and the local oscillator input waveguide are located to form a microstrip line antenna for receiving the radio frequency input signal and the local oscillator input signal, respectively.
  • the suspended microstrip line circuit is composed of a dielectric substrate and a conduction band metal, wherein the dielectric substrate is formed by a semiconductor growth process and is bridged on at least a part of the step, and the conduction band metal is further formed on the dielectric substrate by a semiconductor growth process On at least a portion of the top surface.
  • a dielectric substrate for example, silicon dioxide
  • a conduction band metal layer 111 of a microstrip circuit is formed on the dielectric substrate (for example, silicon dioxide) 110.
  • the dielectric substrate may also use other insulator materials such as a silicon nitride substrate or a gallium arsenide substrate, and the embodiments of the present disclosure are not limited thereto.
  • an alignment mark of Schottky diode bonding is included on the conduction band metal layer 111, and a gallium arsenide Schottky diode 109 is provided on the microstrip circuit, wherein the diode may be flip-chip bonding or front bonding
  • the Schottky diode structure can also be grown directly on the silicon dioxide substrate by a special process, and the metal of the Schottky diode is connected to the metal of the suspended microstrip line.
  • the composition and size parameters of other parts in the mixer can refer to the prior art, or other documents or patents.
  • the working process of the above mixer includes that the terahertz signal needs to be received, through the radio frequency input waveguide structure 101, in the waveguide-transition-suspension microstrip line structure, the terahertz signal is transmitted to the antenna structure of the suspended microstrip line 104; the local oscillator signal entered by the local oscillator input waveguide port 102 passes through the microstrip transition structure 107 of the duplexer and the low-pass filter structure 106 of the local oscillator, and then communicates with the RF signal in the gallium arsenide Schottky diode 109 When mixing occurs, the radio frequency signal is mixed with the second harmonic of the local oscillator, and the intermediate frequency signal after the difference passes through the intermediate frequency filter structure 108 to the intermediate frequency output port 103, and then is transmitted to the load by the external SMA connector.
  • the ground wire structure 105 connected to the metal cavity is led out from the microstrip circuit.
  • the suspended microstrip line substrate (that is, the dielectric substrate) 110 has a silicon dioxide structure, and a metal 111 for forming a microstrip circuit is formed thereon.
  • the cavity structure constructed by the radio frequency input waveguide 101, the local oscillator input waveguide 102 and the space where the internal suspended microstrip line is placed is wrapped by a metal layer, and the periphery of the metal layer is silicon-based material 112.
  • the radio frequency signal and the local oscillator signal are fed from their respective ports, and are transferred to the suspended microstrip line and loaded onto the mixing diode after the corresponding matching network. Since the frequency of the local oscillator signal is lower than the cut-off frequency of the RF port waveguide, the local oscillator The signal will not leak from the radio frequency port, and the radio frequency signal will not leak from the local oscillator port due to the existence of the local oscillator low-pass filter (passing the local oscillator frequency and blocking the radio frequency frequency), thereby achieving isolation between the two ports.
  • the intermediate frequency signal generated by mixing is output from the local oscillator duplexer through a microstrip low-pass filter.
  • FIG. 2a and 2b it is a cross-sectional view taken along A-A' in FIG. 1.
  • the suspended microstrip line structure of this solution is embedded in the top wafer 204 and the bottom wafer 201 at the same time.
  • FIG. 2a there is no ground structure part of the suspended microstrip circuit
  • FIG. 2b there is a ground structure part of the suspended microstrip circuit.
  • a groove structure 207 exists in the silicon-based wafer 201, and a metal layer 208 is grown on the side wall of the groove structure and the surface of the wafer, which is composed of the silicon-based wafer 204 with the growth metal layer 202 of the groove structure ⁇ 206 ⁇
  • the cavity structure 206 In the cavity, there is a silicon dioxide layer substrate structure 203 on which a metal layer 205 is grown to form a suspended microstrip circuit structure.
  • FIG. 3 is a cross-sectional view taken along B-B' in FIG. It is the same scheme as Fig. 2a and Fig. 2b.
  • the silicon-based wafer 301 has a trench structure, and a metal layer 312 is grown on the trench and the surface;
  • the silicon-based wafer 307 has a trench structure, and a metal layer 309 is grown on the trench and the surface.
  • Metal bonding constitutes a cavity structure 306, in which the RF input waveguide 302, the local oscillator input waveguide 303 and the suspended microstrip line cavity portion 311 are formed by bonding two upper and lower silicon-based wafers 301 and 307. Reversely lead out in space, as shown in Figure 1.
  • a silicon dioxide layer substrate structure 304 in the cavity, on which a metal layer 305 is grown to form a suspended microstrip circuit structure.
  • the Schottky diode pair 310 is placed on the suspended microstrip line, and the intermediate frequency output port 308 is led out on the side.
  • a metal layer 402 is grown on a silicon-based wafer 401 with a trench structure, and the silicon-based wafer 404 on which the metal layer 402 is grown constitutes cavity structures 406 and 407. In the cavity, there is a silicon dioxide layer substrate structure 403 on which a metal layer 405 is grown to form a suspended microstrip circuit structure.
  • FIG. 5 it is a cross-sectional view taken along B-B' in FIG. It is the same scheme as Fig. 4a and Fig. 4b.
  • the silicon-based wafer 501 has a trench structure and a metal layer 509 is grown on the trench and the surface; the silicon-based wafer 507 has a trench structure and a metal layer 509 is grown on the trench and the surface.
  • Metal bonding constitutes a cavity structure, in which the RF input waveguide 502, the local oscillator input waveguide 503 and the suspended microstrip line cavity portion 511 are formed by bonding two upper and lower silicon wafers 501 and 507, which can be spaced Lead out in reverse, as shown in Figure 1.
  • a silicon dioxide layer substrate structure 504 in the cavity, on which a metal layer 505 is grown to constitute a microstrip circuit structure.
  • the Schottky diode pair 510 is placed on the suspended microstrip line, and the intermediate frequency output port 508 is led out on the side.
  • the silicon-based monolithic integrated suspended microstrip line mixer DC ground part can be drawn from the side of the suspended microstrip line and can be drawn at other positions (for example, it can be input at the RF input waveguide port and the local oscillator input) Between the waveguide ports), this disclosure does not limit this. But when led out at other locations, the overall impedance matching of the suspended microstrip line needs to be re-optimized.
  • FIGS. 2a, 2b, and 3 the structure of the mixer in FIGS. 2a, 2b, and 3 is taken as an example to describe the manufacturing method of the mixer.
  • a high-resistance silicon wafer 601 is used to prepare the cavity structure of the mixer and the support structure of the internal microstrip circuit.
  • the resistivity of the high-resistance silicon wafer is 1-10K ⁇ .cm, and the thickness is 100-2000 microns.
  • the trench etch of the high-resistance silicon wafer 601 is performed by deep trench etching technology. Due to the different depth of the deep trench structure, it may be necessary to etch separately, or the trench may be etched at the same time through deep width adjustment .
  • the etching depth of the trench can be 30 microns to 1500 microns, and the inclination angle of the trench ranges from 88° to 90°.
  • metal can be grown by angle sputtering or evaporation to ensure that a metal layer 602 is formed on the sidewalls and surface of the trench on the silicon wafer 601, and then plating and other solutions are used
  • the metal layer is grown to the required thickness, about 0.5 microns to 5 microns, to ensure the adhering depth of electromagnetic wave transmission.
  • a sacrificial material or barrier layer is grown on the surface, and then the surface is flattened to the metal layer using a chemical mechanical planarization process.
  • Fig. 6a shows a schematic cross-sectional view of this step at the positions A-A' and B-B' of Fig. 1, respectively.
  • a silicon dioxide layer 604 is grown with a thickness of about 10 microns to 100 microns. Due to the thicker growth thickness, low-pressure chemical vapor deposition or plasma enhancement may be used The chemical vapor deposition method grows, so that the silicon dioxide layer can grow densely on the metal and the sacrificial material. Then, through the photolithography process, the remaining materials that do not require silicon dioxide are etched and cleaned.
  • the metal is grown by sputtering or evaporation to ensure that the metal layer 605 is formed on the surface of the silicon dioxide layer 604, and then the metal layer is grown to the required thickness by plating or other solutions, about 0.5 microns to 5 microns, to ensure electromagnetic waves Depth of transmission. Then, through the photolithography process, the remaining areas that do not require metal are corroded or stripped, and cleaned. In this way, the silicon dioxide layer 604 and the metal layer 605 constitute a microstrip line structure.
  • the thickness and pattern size of the specific silicon dioxide layer 604 and the thickness and pattern size of the metal layer 605 can be determined according to the overall design index of the system.
  • Fig. 6b shows a schematic cross-sectional view of this step at the positions A-A' and B-B' of Fig. 1, respectively.
  • the sacrificial material 603 in the deep trench structure of the silicon wafer 601 is etched and ensured to be cleaned.
  • the silicon dioxide layer 604 and the metal layer 605 above the trench structure 606 will be in a suspended state, and there is no metal layer structure at the bottom, so the structure can be directly designed according to the requirements to form a suspended micro
  • the stripline antenna structure provides a transition for the input radio frequency signal and local oscillator signal to the suspended microstrip line transmission.
  • another high-resistance silicon wafer 607 is used to prepare the cavity structure of the mixer.
  • the resistivity of the high-resistance silicon wafer is 1-10K ⁇ .cm, and the thickness is 100-2000 microns.
  • trench etching of the high-resistance silicon wafer 607 by deep trench etching technology requires trench etching of three regions: the RF input waveguide region 610, the local oscillator input waveguide region 611, and The microstrip line cavity upper cover region 609 is suspended. Due to the different depth of the deep trench structure, it may be necessary to etch separately, or the trench can be etched at the same time by adjusting the deep width.
  • the etching depth of the trench can be 30 microns to 1500 microns, and the inclination angle of the trench ranges from 88° to 90°.
  • metal can be grown by angle sputtering or evaporation to ensure that a metal layer 608 is formed on the sidewalls and surface of the trench on the silicon wafer 607, and then electroplating and other solutions are used
  • the metal layer is grown to the required thickness, about 0.5 microns to 5 microns, to ensure the adhering depth of electromagnetic wave transmission.
  • Fig. 6c shows a schematic cross-sectional view of this step at the positions A-A' and B-B' of Fig. 1, respectively.
  • the silicon wafer 607 and the silicon wafer 601 are aligned upside down, and the accuracy can be controlled within 1 to 5 microns through positioning holes or photolithographic alignment marks.
  • the wafer-level low-temperature gold-gold diffusion bonding process can be used to completely bond the two wafers; the gold-gold diffusion bonding process can also be performed on a single mixer unit to place the upper and lower two layers of wafers Fully fit.
  • the structure of the previously etched and grown metal layer is used to form the RF input waveguide port 610, the local oscillator input waveguide port 611, and the suspended microstrip line cavity cover Area 609.
  • An intermediate frequency output 612 is also formed at the other end.
  • a cavity structure with three ports is formed, which correspond to 101 RF input, 102 LO input, and 103 IF output in FIG. 1, respectively.
  • the RF input short-circuit surface and the local oscillator input short-circuit surface also exist in the cavity, and the specific size can be adjusted according to the design requirements.
  • the extraction direction of the waveguide port of the RF input waveguide and the extraction port of the local oscillator input waveguide can be parallel to the normal direction of the plane where the suspended microstrip line is located (H-plane probe) or to the suspended micro The normal to the plane where the line lies is perpendicular (E-plane probe).
  • FIG. 7 it is a partially enlarged schematic view of the Schottky diode part of FIG. 1.
  • the metal layer 702 grown on the silicon dioxide substrate 701 as a whole constitutes a suspended microstrip line structure.
  • the Schottky diode 703 needs to be bonded with conductive glue or gold wire for flip-chip bonding, or in the previous preparation process, the Schottky diode structure 703 is directly grown on the silicon dioxide 701 through a special process. If the Schottky diode needs to be bonded, after the metal layer 702 is grown and lithography, an alignment mark 704 is made on the metal layer 702 according to the outline size of the Schottky diode to be used.
  • the alignment mark may be metal
  • the pattern may also be an insulating material pattern such as silicon dioxide.
  • the pattern may be a cross-shaped mark or other marks that are convenient for aligning Schottky diodes.
  • the alignment mark can define the placement position of the Schottky diode and determine that the angular offset is controllable. Then, the Schottky diode is fixed on the suspended microstrip line by means of conductive adhesive or gold wire bonding.
  • the silicon dioxide substrate is directly grown in the mixer cavity, and the size and position of the silicon dioxide substrate and the metal layer can be determined through photolithography and etching processes, thereby ensuring that the suspended microstrip line and The alignment accuracy of the cavity improves the working performance of the suspended microstrip line mixer.
  • the silicon dioxide substrate is directly grown in the mixer cavity, the bottom of which is supported by the structures on both sides of the trench structure, and forms good contact with the metal layer, avoiding the current application of conductive silver paste.
  • the problem of uniformity or the existence of bubbles ensures the controllability of the mixer processing technology and improves the working performance of the suspended microstrip line mixer.
  • the Schottky diode is a directly grounded structure, which uses metal layer lithography and etching processes to make it short-circuit with the metal layer beside the suspended microstrip line, which can accurately control the outer size of the short-circuit line. It avoids the introduction of process uncertainties such as conductive silver glue or gold wire bonding, and provides a strong guarantee for the consistency of the mixer's preliminary design and performance testing.
  • the mixer cavity structure uses a silicon-based material based on micromachining, which greatly reduces the cost and overall weight of the device compared to current brass materials; the suspended microstrip line uses silicon dioxide Insulation materials such as silicon nitride or silicon nitride have good compatibility with silicon-based processes, which reduces the processing cost while ensuring the stability of the process; in addition, this type of silicon-based mixer devices can also be used with other active or Passive devices are directly integrated, such as low noise amplifiers, detectors, and peripheral bias circuits. Preparing for further system integration.
  • the deep trench etching process can be used to accurately control the size of the internal cavity, which breaks through the limit problem of small-sized metal cavity processing and is a higher frequency mixing Frequency converter application provides design ideas.
  • the mixer cavity structure of the present invention can also be used in combination with a quartz substrate suspended microstrip line, or a monolithic integrated gallium arsenide substrate suspended microstrip line, a silicon-based monolithic integrated suspension according to an embodiment of the present disclosure
  • the type of microstrip line mixer is not limited. It can be a single-ended, single-balanced, double-balanced, triple-balanced, or I/Q passive mixer, or it can be an active frequency doubler. Greatly improve the flexibility of system design.
  • the terahertz mixer according to the embodiment of the present disclosure can be applied to various electronic devices. For example, by integrating a plurality of such mixers and other devices (for example, other forms of transistors, etc.), an integrated circuit (IC) can be formed, and an electronic device can be constructed therefrom. Therefore, the present disclosure also provides an electronic device including the above terahertz mixer.
  • the electronic device may further include components such as a display screen cooperating with the integrated circuit and a wireless transceiver cooperating with the integrated circuit.
  • Such electronic devices are, for example, smart phones, computers, tablet computers (PCs), wearable smart devices, mobile power supplies, and the like.
  • the structure and method of silicon-based monolithic integrated devices are not limited to mixer applications, but can also be used in frequency multipliers.
  • the terahertz silicon-based monolithic integrated suspension microstrip line mixer of the embodiment of the present invention improves the processing accuracy of the mixer, reduces the weight and cost of the device, and improves the mixer Performance, and provides favorable conditions for its further systematic integration.

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Abstract

公开了一种太赫兹混频器及其制造方法及包括该混频器的电子设备。根据实施例，该太赫兹混频器包括：腔体，用于分别形成射频输入波导和本振输入波导，以及用于容纳悬置微带线，在腔体的内侧表面上形成有台阶；悬置微带线，通过半导体生长工艺形成并跨接在台阶的至少一部分上，悬置微带线分别延伸至射频输入波导和本振输入波导所在腔体内，以分别形成用于接收射频输入信号和本振输入信号的微带线天线。

Description

太赫兹混频器及其制造方法及包括该混频器的电子设备
本申请要求于2018年12月29日提交的、申请号为201811642899.1的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及通信领域，具体地，涉及太赫兹混频器及其制造方法及包括该混频器的电子设备。
背景技术
近年来，太赫兹技术作为重要的研究领域，在国内外已经受到越来越广泛的关注。从太赫兹波的大气传输特性中可以看出，在183GHz,320GHz、380GHz、664GHz附近存在水分子吸收窗口，是用来探测大气湿度轮廓线的关键频段；在94GHz、140GHz、220GHz毫米波传播受到衰减较小，基于点对点通信而被低空空地导弹和地基雷达所采用。因而针对这些频段的研究非常重要。
无论太赫兹波应用于哪个方面以及哪个频段，都离不开对太赫兹波的接收，对于最为常用的基于超外差体制的接收机来说，实现频率下变频作用的混频器是其中的一个关键部件。在固态太赫兹雷达和通信等系统中，由于低噪声放大器实现较为困难，混频器就成为了接收端的第一级，所以混频器性能的好坏直接关系到整个接收机系统的性能。同时，由于同频段高性能本振源实现难度大，所以采用分谐波混频技术是解决此问题的有效途径。在仅有的几类可工作于太赫兹频段的混频器中，只有基于平面肖特基二极管的太赫兹分谐波混频器可工作于室温，无需提供如液氦等以实现苛刻的低温环境，因而获得了较为普遍的应用。
针对100GHz～500GHz的太赫兹波段范围，目前主要的接收机方案之一是超外差式接收机，尤其当频率高于200GHz时，基于硅基CMOS工艺和硅锗CMOS工艺的混频器变频损耗较大，还不适合应用，所以仍主要依赖于平面封装的砷化镓肖特基二极管的太赫兹分谐波混频器。
现有技术中平面封装的砷化镓肖特基二极管的太赫兹分谐波混频器的方案主要包括以下几种：方案1是将砷化镓肖特基二极管倒装键合在石英基板微带线上，外围是金 属腔体。该方案简单易行，但缺点也较为明显，肖特基二极管倒装键合需采用导电胶或金丝绑定，其与微带线间的对准精度不好把控。石英微带线与金属腔体装配也存在对准误差。金属腔体加工随着频率的上升难度也逐渐增大，有些尺寸及角度很难实现。方案2是基于砷化镓的单片集成二次谐波混频器链路结构(肖特基二极管与微带线都采用砷化镓基片同步加工)，外围是金属腔体。该方案可避免二极管与微带线的对准问题，但砷化镓基微带线与金属腔体装配也存在对准误差。整体加工成本相对于方案1较高。方案3是采用硅基微机械工艺加工腔体结构，肖特基二极管和微带线仍采用方案1和方案2中的常规方式。该方案可以降低混频器的整体重量，且同时能够保障腔体内尺寸，但微带线与腔体结构间的对准问题仍没有得到很好解决。
发明内容
有鉴于此，本公开的目的至少部分地在于提供一种能够很好地保证微带线与腔体之间的对准精度的太赫兹混频器及其制造方法以及包括该太赫兹混频器的电子设备。
根据本公开的一个方面，提供了太赫兹混频器，包括：腔体，用于分别形成射频输入波导和本振输入波导，以及用于容纳悬置微带线，在腔体的内侧表面上形成有台阶；悬置微带线，通过半导体生长工艺形成并跨接在台阶的至少一部分上，悬置微带线分别延伸至射频输入波导和本振输入波导所在腔体内，以分别形成用于接收射频输入信号和本振输入信号的微带线天线。
根据本公开的另一方面，提供了一种制造太赫兹混频器的方法，包括：在硅基体或砷化镓基体上形成沟槽结构，沟槽结构包括台阶；在硅基体或砷化镓基体的内侧表面和沟槽的侧壁上形成金属层；跨接在台阶的至少一部分上形成悬置微带线。
根据本公开的第三方面，还提供了一种电子设备，包括由上述的太赫兹混频器形成的集成电路。
根据本公开的实施例，通过采用在混频腔体内直接生长形成悬置微带线的介质基片，并通过光刻及腐蚀工艺确定介质基片(即二氧化硅基板)及金属层的尺寸及位置，从而保证悬置微带线与腔体的对准精度，提高悬置微带线混频器的工作性能。由于悬置微带线的介质基片直接生长在混频腔体内，其与底部的金属层形成良好接触，避免了目前采用导电银胶涂抹不均匀或存在气泡等问题，保证了混频器加工工艺的可控性，提高了悬置微带线混频器的工作性能。同时，由于采用了大部分处于悬浮状态的悬置微带线，从 而具有比常规微带线更高的Q值，接近于无色散。
附图说明
通过以下参照附图对本公开实施例的描述，本公开的上述以及其他目的、特征和优点将更为清楚，在附图中：
图1示出了根据本公开的实施例的太赫兹混频器的结构示意图；
图2a和图2b示出了沿图1中的A-A’截取的根据本公开的实施例的示例截面视图；
图3示出了沿图1中的B-B’截取的根据本公开的实施例的示例截面视图；
图4a和图4b示出了沿图1中的A-A’截取的根据本公开的实施例的另一示例截面视图；
图5示出了沿图1中的B-B’截取的根据本公开的实施例的另一示例截面视图；
图6a至图6d示出了根据本公开的实施例的制造太赫兹混频器的流程的示意图；以及
图7示出了根据本公开的实施例的肖特基二极管的局部放大图。
贯穿附图，相同或相似的附图标记表示相同或相似的部件。
具体实施方式
根据本公开的实施例的太赫兹混频器主要采用硅基微纳加工工艺和微机械加工工艺实现太赫兹单片集成式悬置微带线混频器。悬置微带线混频器，结构上与常规的微带线混频器类似，只是大部分微带线底部处于悬浮状态，介质基板不与地接触而悬置在空气中，所以其电磁场的大部分处于空气中，介质影响不大，其有效介电常数接近于1，从而其特性参量接近空气中的参量，线中损耗大大减小，且具有比常规微带线更高的Q值，接近于无色散。关于该太赫兹混频器的整体结构的实施例如图1所示。
该太赫兹混频器是单片集成悬置微带线混频器，主要包括腔体结构和悬置微带线电路结构。腔体用于分别形成射频输入波导和本振输入波导，以及用于容纳悬置微带线，在腔体的内侧表面上形成有台阶，用于支撑悬置微带线的介质基片。如图1所示，由硅基(也可以为砷化镓基，本公开的实施例不限于此)构成表面存在金属层的腔体结构、射频输入波导结构101和本振输入波导结构102。在金属层所包围的腔体内放置悬置微带线电路结构。悬置微带线电路结构通过半导体生长工艺形成并跨接在台阶的至少一部 分上，因此悬置微带线的大部分结构处于悬浮的状态。悬置微带线电路的一部分分别延伸至射频输入波导和本振输入波导所在腔体内，以分别形成用于接收射频输入信号和本振输入信号的微带线天线。
悬置微带线电路由介质基片和导带金属构成，其中，介质基片通过半导体生长工艺形成并跨接在台阶的至少一部分上，导带金属进一步通过半导体生长工艺形成在介质基片的顶部表面的至少一部分上。如图1所示，形成有介质基片(例如二氧化硅)110，在介质基片(例如二氧化硅)110上形成有微带电路的导带金属层111。
在本公开的其他实施例中，介质基片还可以采用氮化硅基片或砷化镓基片等其他绝缘物材料，本公开的实施例不限于此。
进一步地，在导带金属层111上包含肖特基二极管键合的对准标记，在微带电路上设置有砷化镓肖特基二极管109，其中二极管可以为倒装键合也可以为正面键合，还可以通过特殊工艺将肖特基二极管结构直接生长在二氧化硅基片上，且肖特基二极管金属与悬置微带线金属连接。混频器中其他部分构成及尺寸参数可参考现有技术，或其他文献或专利。
上述混频器的工作过程包括，需要接收的太赫兹信号，通过射频输入波导结构101，在波导-过渡-悬置微带线结构中，将太赫兹信号传输到悬置微带线的天线结构104中；由本振输入波导端口102进入的本振信号，经过双工器的微带过渡结构107，和本振低通滤波器结构106后，在砷化镓肖特基二极管109中与射频信号发生混频，射频信号与本振的二次谐波进行混频，做差后的中频信号，经过中频滤波器结构108到达中频输出端口103，再由外加的SMA接头传输到负载上。为了避免肖特基二极管对的非一致性而产生的直流偏量，由微带电路中引出接金属腔体的接地线结构105。其中悬置微带线基板(即介质基片)110为二氧化硅结构，其上为用于形成微带电路的金属111。由射频输入波导101，本振输入波导102和内部悬置微带线放置的空间共同构建的腔体结构由金属层包裹，且金属层外围是硅基材质112。
射频信号和本振信号分别从各自端口馈入，经过渡到悬置微带线并经相应匹配网络后加载到混频二极管上，由于本振信号频率低于射频端口波导截止频率，所以本振信号不会从射频端口处泄漏，而射频信号由于本振低通滤波器(通本振频率、阻射频频率)的存在而不会从本振端口泄漏，从而实现这两个端口间的隔离。混频产生的中频信号从本振双工器通过一个微带低通滤波器输出。
下面结合更具体的示例对本方案的具体内容进行说明，应理解，图中尺寸与比例仅用于说明，与实际结构无关。
参考图2a和图2b，其为图1中沿A-A’截取的截面视图。该方案的悬置微带线结构同时嵌入到顶部晶圆片204和底部晶圆片201的内部。其中，图2a不存在悬置微带电路接地结构部分，图2b存在悬置微带电路接地结构部分。硅基晶圆片201中存在沟槽结构207，且在沟槽结构的侧壁及晶圆表面上生长金属层208，与带有沟槽结构的生长金属层202的硅基晶圆片204构成了腔体结构206。而腔体内存在二氧化硅层基片结构203，其上生长金属层205，构成悬置微带电路结构。
参考图3，其为图1中沿B-B’截取的截面视图。与图2a和图2b为同一方案。硅基晶圆片301上有沟槽结构，且在沟槽与表面生长金属层312；硅基晶圆片307上有沟槽结构，且在沟槽与表面生长金属层309。金属键合构成了腔体结构306，其中射频输入波导302，本振输入波导303和悬置微带线腔体部分311由上下两片硅基晶圆片301和307键合而构成，可以在空间上反向引出，如图1所示。腔体内存在二氧化硅层基片结构304，其上生长金属层305，构成悬置微带电路结构。肖特基二极管对310在悬置微带线上放置，而其中频输出端口308则在旁侧引出。
参考图4a和图4b，其为图1中沿A-A’截取的截面视图的另一示例方案，悬置微带线嵌入到底部晶圆片401内部。其中，图4a不存在悬置微带电路接地结构部分，图4b存在悬置微带电路接地结构部分。带有沟槽结构的硅基晶圆片401上生长金属层402，与生长金属层402的硅基晶圆片404构成了腔体结构406和407。而腔体内存在二氧化硅层基片结构403，其上生长金属层405，构成悬置微带电路结构。
参考图5，其为图1中沿B-B’截取的截面视图。与图4a和图4b为同一方案。硅基晶圆片501上有沟槽结构，且在沟槽与表面生长金属层509；硅基晶圆片507上有沟槽结构，且在沟槽与表面生长金属层509。金属键合构成了腔体结构，其中射频输入波导502，本振输入波导503和悬置微带线腔体部分511由上下两片硅晶圆片501和507键合而构成，可以在空间上反向引出，如图1所示。腔体内存在二氧化硅层基片结构504，其上生长金属层505，构成微带电路结构。肖特基二极管对510在悬置微带线上放置，而其中频输出端口508则在旁侧引出。
容易理解的是，可以根据实际设计的需要，而选择将硅基单片集成悬置微带线混频器的内部悬置微带线结构嵌入到顶部晶圆片空间内或底部晶圆片空间内。
另外，硅基单片集成悬置微带线混频器的直流接地部分，可以从悬置微带线的侧边引出，可以在其他的位置引出(例如可以在射频输入波导口与本振输入波导口之间)，本公开对此不做限定。但当在其他位置引出时，需要对悬置微带线的整体阻抗匹配重新优化。
下面结合图6a至图6d，以图2a、图2b和图3中的混频器的结构为例，对混频器的制造方法进行说明。
参考图6a，采用高阻硅晶圆601制备混频器的腔体结构及内部微带电路的支撑结构。该高阻硅晶圆的电阻率为1～10KΩ.cm，厚度为100微米～2000微米。首先通过深沟槽刻蚀技术对高阻硅晶圆片601进行沟槽刻蚀，由于深沟槽结构的深度不同，可能需要单独刻蚀，也可以通过深宽度调整，同时进行沟槽刻蚀。沟槽刻蚀深度可以为30微米～1500微米，沟槽倾斜角度的范围为88°～90°，具体尺寸需根据标准矩形波导口和设计参数共同确定。刻蚀出两个深沟槽结构后，可采用角度溅射或蒸镀等方式生长金属，保证在硅晶圆片601上的沟槽侧壁和表面都形成金属层602，之后采用电镀等方案将金属层生长至需要的厚度，约0.5微米～5微米，保证电磁波传输的趋附深度。然后在表面生长牺牲材料或阻挡层，再采用化学机械平坦化工艺将表面打平至金属层。这样深沟槽结构中填充牺牲材料603，在后面形成波导输入端口时需要腐蚀干净。图6a分别给出该步工艺在图1的A-A’和B-B’位置的截面示意图。
参考图6b，在上步工艺的基础上，生长一层二氧化硅层604，厚度大约10微米～100微米之间，由于生长厚度较厚，可采用低压力化学气相沉积法，或者等离子体增强化学的气相沉积法生长，这样该二氧化硅层便可以致密的生长在金属及牺牲材料之上。然后通过光刻工艺，将其余不需要二氧化硅区域的材料进行腐蚀，并清洗干净。然后，再通过溅射或蒸镀等方式生长金属，保证二氧化硅层604表面都形成金属层605，之后采用电镀等方案将金属层生长至需要的厚度，约0.5微米～5微米，保证电磁波传输的趋附深度。然后再通过光刻工艺，将其余不需要金属的区域进行腐蚀或剥离，并清洗干净。这样二氧化硅层604和金属层605便构成了微带线结构。具体二氧化硅层604的厚度及图形尺寸，以及金属层605的厚度及图形尺寸，可根据系统整体设计指标来确定。图6b分别给出该步工艺在图1的A-A’和B-B’位置的截面示意图。
参考图6c，在上步的工艺基础上，对硅晶圆片601深沟槽结构中的牺牲材料603进行腐蚀，并保证清洗干净。在牺牲材料腐蚀之后，沟槽结构606上方的二氧化硅层604 和金属层605将会处于悬置状态，且底部没有金属层结构，所以可直接根据要求对结构进行设计，从而形成悬置微带线天线结构，对输入的射频信号和本振信号向悬置微带线传输提供过渡。同时，用另一片高阻硅晶圆607制备混频器的腔体结构。该高阻硅晶圆的电阻率为1～10KΩ.cm，厚度为100微米～2000微米。首先通过深沟槽刻蚀技术对高阻硅晶圆片607进行沟槽刻蚀，需要分别对三个区域进行沟槽刻蚀：射频输入波导口区域610，本振输入波导口区域611，以及悬置微带线腔体上盖区域609。由于深沟槽结构的深度不同，可能需要单独刻蚀，也可以通过深宽度调整，同时进行沟槽刻蚀。沟槽刻蚀深度可以为30微米～1500微米，沟槽倾斜角度的范围为88°～90°，具体尺寸需根据标准矩形波导口和设计参数共同确定。刻蚀出三个深沟槽结构后，可采用角度溅射或蒸镀等方式生长金属，保证在硅晶圆片607上的沟槽侧壁和表面都形成金属层608，之后采用电镀等方案将金属层生长至需要的厚度，约0.5微米～5微米，保证电磁波传输的趋附深度。图6c分别给出该步工艺在图1的A-A’和B-B’位置的截面示意图。
参考图6d，在上步工艺的基础上，将硅晶圆片607与硅晶圆片601倒置对准，可通过定位孔或光刻对位标记等，保证精度控制在1～5微米以内。对准后，可采用晶圆级低温金金扩散键合等工艺，将两块晶圆完全贴合；也可以对单颗混频器单元进行金金扩散键合工艺，将上下两层晶圆完全贴合。这样，通过上下沟槽结构对准键合后，分别利用之前刻蚀并生长金属层的结构，形成了射频输入波导口610，本振输入波导口611，以及悬置微带线腔体上盖区域609。在另一端还形成了中频输出端612。在整体结构上，形成了拥有三个端口的腔体结构，三个端口分别对应图1中的101射频输入、102本振输入、103中频输出。且在该腔体中同样存在射频输入短路面和本振输入短路面，具体尺寸可根据设计要求进行调整。
需要说明的是，射频输入波导的波导口的引出方向和本振输入波导的波导口的引出方向可以与悬置微带线所在平面的法线方向平行(H面探针)或与悬置微带线所在平面的法线垂直(E面探针)。
参考图7，为图1肖特基二极管部分的局部放大示意图。二氧化硅基底701上生长的金属层702整体构成了悬置微带线结构。肖特基二极管703倒装键合需采用导电胶或金丝绑定，或者在前面的制备过程中，通过特殊工艺直接在二氧化硅701上生长肖特基二极管结构703。如果肖特基二极管需要键合，则在金属层702生长好并光刻后，根据将要使用的肖特基二极管外形尺寸，在金属层702上制作对准标记704，该对准标记可 以为金属图案，也可以为二氧化硅等绝缘材料图案，该图案可以为十字形标记，也可以为其他方便对准肖特基二极管的标记。该对准标记可以限定肖特基二极管的放置位置，并确定角度偏移可控。然后再采用导电胶或金丝绑定等手段将肖特基二极管固定在悬置微带线上。
根据本公开的实施例，将二氧化硅基板直接生长在混频器腔体内，并可通过光刻及腐蚀工艺确定二氧化硅基板及金属层的尺寸及位置，从而保证悬置微带线与腔体的对准精度，提高悬置微带线混频器的工作性能。
根据本公开的实施例，将二氧化硅基板直接生长在混频器腔体内，其底部受沟槽结构的两侧结构支撑，并与金属层形成良好接触，避免了目前采用导电银胶涂抹不均匀或存在气泡等问题，保证了混频器加工工艺的可控性，提高悬置微带线混频器的工作性能。
根据本公开的实施例，肖特基二极管为直接接地结构，采用金属层光刻及腐蚀等工艺，令其与悬置微带线旁侧的金属层短路，可以精确控制短路线的外形尺寸，避免了导电银胶或金丝绑定等工艺不确定因素的引入，为混频器前期设计与性能测试的一致性，提供了有力保障。
根据本公开的实施例的混频器腔体结构，采用基于微机械加工的硅基材料，相比当前黄铜材料，大大降低了成本及器件的整体重量；悬置微带线采用二氧化硅或氮化硅等绝缘材料，其与硅基工艺兼容性很好，在保证工艺的稳定性的同时，降低了加工成本；此外，该类硅基混频器器件，还可以与其他有源或无源器件直接集成，如低噪声放大器，检波器，和外围偏置电路等。为进一步系统集成化做好了前期铺垫。
根据本公开的实施例的混频器腔体结构，采用深沟槽刻蚀工艺，可以精确的控制内部腔体的尺寸，突破了金属腔体小尺寸加工的极限问题，为更高频率的混频器应用提供了设计思路。本发明中混频器腔体结构，也可与石英基板悬置微带线，或单片集成砷化镓基板悬置微带线组合使用，根据本公开的实施例的硅基单片集成悬置微带线混频器类型并不限定。可以是单端、单平衡、双平衡、三平衡或I/Q等无源混频器，也可以是有源倍频器。极大地提高了系统设计的灵活性。
根据本公开实施例的太赫兹混频器可以应用于各种电子设备。例如，通过集成多个这样的混频器以及其他器件(例如，其他形式的晶体管等)，可以形成集成电路(IC)，并由此构建电子设备。因此，本公开还提供了一种包括上述太赫兹混频器的电子设备。电子设备还可以包括与集成电路配合的显示屏幕以及与集成电路配合的无线收发器等 部件。这种电子设备例如智能电话、计算机、平板电脑(PC)、可穿戴智能设备、移动电源等。
另外，硅基单片集成器件结构及方式并不限于混频器的应用，也可应用在倍频器中。
同现有技术相比，本发明实施例的太赫兹硅基单片集成悬置微带线混频器，在提高混频器加工精度的同时，降低了器件重量及成本，提高了混频器性能，并为其进一步系统化集成提供了有利条件。
尽管以上已经结合本申请的优选实施例示出了本申请，但是本领域的技术人员将会理解，在不脱离本申请的精神和范围的情况下，可以对本申请进行各种修改、替换和改变。因此，本申请不应由上述实施例来限定，而应由所附权利要求及其等价物来限定。

Claims (23)

  1. 一种太赫兹混频器，包括：
    腔体，用于分别形成射频输入波导和本振输入波导，以及用于容纳悬置微带线，在所述腔体的内侧表面上形成有台阶；
    悬置微带线，通过半导体生长工艺形成并跨接在所述台阶的至少一部分上，所述悬置微带线分别延伸至所述射频输入波导和所述本振输入波导所在腔体内，以分别形成用于接收射频输入信号和本振输入信号的微带线天线。
  2. 根据权利要求1所述的太赫兹混频器，其中，所述悬置微带线包括：
    介质基片，所述介质基片通过半导体生长工艺形成并跨接在所述台阶的至少一部分上；
    导带金属，所述导带金属通过半导体生长工艺形成在所述介质基片的顶部表面的至少一部分上。
  3. 根据权利要求2所述的太赫兹混频器，其中，所述介质基片包括二氧化硅基片、氮化硅基片或砷化镓基片。
  4. 根据权利要求2或3所述的太赫兹混频器，其中，所述介质基片的厚度为10μm～100μm。
  5. 根据权利要求2至4中任一项所述的太赫兹混频器，其中，所述腔体由硅基体或砷化镓基体形成，在所述硅基体或所述砷化镓基体上形成有沟槽结构，在所述硅基体或所述砷化镓基体的内侧表面和所述沟槽的侧壁上形成有金属层，通过所述金属层之间的键合形成所述腔体。
  6. 根据权利要求5所述的太赫兹混频器，其中，所述导带金属与所述金属层电连接。
  7. 根据权利要求5或6所述的太赫兹混频器，其中，所述金属层的厚度根据电磁波传输的趋附深度要求确定。
  8. 根据权利要求5至7中任一项所述的太赫兹混频器，其中，所述金属层的厚度为0.5μm～5μm。
  9. 根据权利要求5至8中任一项所述的太赫兹混频器，其中，所述沟槽结构包括用于形成所述射频输入波导的第一沟槽和用于形成所述本振输入波导的第二沟槽，所 述第一沟槽的深度方向和所述第二沟槽的深度方向与所述悬置微带线所在平面的法线方向平行。
  10. 根据权利要求5至9中任一项所述的太赫兹混频器，其中，所述射频输入波导的波导口的引出方向和所述本振输入波导的波导口的引出方向与所述悬置微带线所在平面的法线方向平行或与所述悬置微带线所在平面的法线垂直。
  11. 根据权利要求5至10中任一项所述的太赫兹混频器，还包括：
    肖特基二极管，所述肖特基二极管倒装键合或正面键合在所述介质基片上，或者通过半导体生长工艺形成在所述介质基片上，且所述肖特基二极管与所述导带金属电连接。
  12. 根据权利要求11所述的太赫兹混频器，其中，在所述导带金属上设置有对准标记，所述对准标记用于在键合所述肖特基二极管时进行对准。
  13. 一种制造太赫兹混频器的方法，包括：
    在硅基体或砷化镓基体上形成沟槽结构，所述沟槽结构包括台阶；
    在所述硅基体或所述砷化镓基体的内侧表面和所述沟槽的侧壁上形成金属层；
    跨接在所述台阶的至少一部分上形成悬置微带线。
  14. 根据权利要求13所述的方法，其中，在硅基体或砷化镓基体上形成沟槽结构包括：
    通过单独刻蚀或通过基于深宽度调整的同时刻蚀，在所述硅基体或所述砷化镓基体上分别形成第一沟槽和第二沟槽，其中，所述沟槽的参数根据矩形波导口标准和设计参数确定。
  15. 根据权利要求14所述的方法，其中，在所述硅基体或所述砷化镓基体的内侧表面和所述沟槽的侧壁上形成金属层包括：
    通过半导体生长工艺，在所述硅基体或所述砷化镓基体的内侧表面和所述沟槽的侧壁上形成金属层；
    通过电镀工艺使所述金属层生长至预定的厚度。
  16. 根据权利要求15所述的方法，其中，所述金属层的厚度根据电磁波传输的趋附深度要求确定。
  17. 根据权利要求16所述的方法，在跨接在所述台阶的至少一部分上形成悬置微带线之前，还包括：
    在所述金属层上生长牺牲材料或阻挡层；
    通过平坦化工艺将所形成的牺牲材料或阻挡层打平至所述金属层，以在所述第一沟槽、所述第二沟槽以及其他用于形成所述悬置微带线的沟槽区域内形成牺牲层结构。
  18. 根据权利要求17所述的方法，跨接在所述台阶的至少一部分上形成悬置微带线包括：
    通过半导体生长工艺，在所述金属层上形成介质层；
    通过刻蚀工艺去除所述介质层的一部分，以使得所形成的介质基片跨接在所述台阶的至少一部分上；
    通过半导体生长工艺，在所述介质基片上形成导带金属层；
    通过电镀工艺使所述导带金属层生长至预定的厚度；
    通过刻蚀工艺去除所述导带金属层的一部分，以在所述介质基片的顶部表面的至少一部分上形成导带金属。
  19. 根据权利要求18所述的方法，在跨接在所述台阶的至少一部分上形成悬置微带线之后，还包括：
    去除所述第一沟槽、所述第二沟槽以及其他用于形成所述悬置微带线的沟槽区域内的所述牺牲层结构，使得所述悬置微带线悬置于所述第一沟槽、所述第二沟槽以及其他用于形成所述悬置微带线的沟槽区域的上方，从而在所述第一沟槽和所述第二沟槽的区域内形成微带线天线。
  20. 根据权利要求18或19所述的方法，还包括：
    在所述介质基片上倒装键合或正面键合肖特基二极管，或通过半导体生长工艺，在所述介质基片上形成所述肖特基二极管，且使所述肖特基二极管与所述导带金属电连接。
  21. 根据权利要求18至20中任一项所述的方法，其中，将所述导带金属与所述金属层电连接。
  22. 根据权利要求18至20中任一项所述的方法，其中，在所述导带金属上形成对准标记。
  23. 一种电子设备，包括由如权利要求1～12中任一项所述的太赫兹混频器形成的集成电路。
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