WO2020133316A1 - 一种拆分结构谐振器 - Google Patents

一种拆分结构谐振器 Download PDF

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Publication number
WO2020133316A1
WO2020133316A1 PCT/CN2018/125235 CN2018125235W WO2020133316A1 WO 2020133316 A1 WO2020133316 A1 WO 2020133316A1 CN 2018125235 W CN2018125235 W CN 2018125235W WO 2020133316 A1 WO2020133316 A1 WO 2020133316A1
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resonator
unit
axis
sub
resonators
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English (en)
French (fr)
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张孟伦
庞慰
杨清瑞
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • the invention relates to a resonator, in particular to a split structure resonator.
  • Thin-film bulk wave resonators made by longitudinal resonance of piezoelectric films in the thickness direction have become a viable alternative to surface acoustic wave devices and quartz crystal resonators in mobile phone communications and high-speed serial data applications.
  • the RF front-end bulk wave filter/duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, and strong anti-static discharge (ESD) capability.
  • ESD anti-static discharge
  • the high temperature caused by high heat will cause the device Q value and electromechanical coupling coefficient to decrease greatly; in addition, the high temperature will cause the frequency of the resonator to drift; in addition, the high temperature will also reduce the overall life of the device.
  • the above problems ultimately lead to serious deterioration of the performance parameters of the filter composed of resonators such as bandwidth, insertion loss, roll-off characteristics, and out-of-band suppression.
  • the traditional approach to the problem of heat generation is to increase the area of the resonator.
  • This method can effectively reduce the power density in the resonator within a certain power range, thereby reducing the operating temperature of the resonator.
  • relying solely on the method of increasing the area can no longer meet the current requirements of the resonator on power capacity, and further improvement of the traditional structure is needed.
  • the object of the present invention is to provide a split structure resonator, which not only increases the equivalent area, but also increases the perimeter area ratio of the resonator, thereby improving the heat dissipation performance of the resonator and the overall power capacity of the electronic device.
  • a split structure resonator is a resonator group composed of several sub-resonators, the equivalent impedance of the resonator group is equal to the impedance of the original single resonator; each two adjacent At most, there is only electrical connection between the sub-resonators, while acoustic isolation is maintained; each of the sub-resonators includes a lower electrode, a piezoelectric layer, and an upper electrode.
  • two pins are provided on the resonator group, and the two pins occupy the first potential point and the second potential point, respectively, and are connected to other electronic components.
  • the upper electrode and/or the lower electrode of the sub-resonator are electrically connected to the upper electrode and/or the lower electrode of the adjacent sub-resonator.
  • the C axis of the piezoelectric layer of the sub-resonator points from one potential point to another potential point;
  • the C axis of a part of the piezoelectric layer of the resonator may be directed from the first potential point to the second potential point; the C axis of the piezoelectric layer of the other part of the resonator may be directed to the first potential point by the second potential point.
  • the circuits of the resonator group are composed of several units connected in series; n (n>1) sub-resonators are connected in parallel in each unit and/or m circuits are connected in series ( m>1) unit.
  • the unit has a certain resonator piezoelectric layer'C-axis orientation configuration', the C-axis orientation configuration requirement: the C-axis orientation of one sub-resonator and the other sub-resonators in the unit are the same or The C axis of at least one of the sub-resonators and the other sub-resonators in the unit points in opposite directions.
  • a certain unit and the rest of the units have a certain'unit C axis configuration' relationship, and the relationship requires that a certain unit and the remaining units have the same unit C axis configuration relationship or a certain
  • the unit and at least one of the remaining units have opposite unit C-axis configuration relationships.
  • the unit is formed by connecting at least two adjacent sub-resonators in parallel and in series with at least one other sub-resonator.
  • the upper electrode and the lower electrode are made of metal, a multi-layer composite material or alloy of metal; the metal includes at least one of the following: molybdenum, ruthenium, gold, magnesium, aluminum, tungsten, titanium, Chromium, iridium, osmium.
  • the material of the piezoelectric layer includes at least one of the following: aluminum nitride, zinc oxide, lead zirconate titanate (PZT), and the piezoelectric material is doped with rare earth elements.
  • the beneficial effect of the present invention lies in that, under the premise that the equivalent impedance is the same, splitting a resonator into multiple parts can increase the power capacity.
  • the use of pure series splitting will make the area of each sub-resonator larger. Although the larger area brings about a reduction in power density, if the resonator area is too large, the thermal gradient and temperature distribution in each resonator will be more uneven , Resulting in a sharp decline in the performance of the resonator under high power input; at the same time, the increase in area also causes the resonator to deteriorate in rigidity, which aggravates the deformation of the resonator under stress, resulting in a decrease in the Q value of the resonator, which eventually causes the device performance to deteriorate and stabilize Problems such as poor performance, shortened life span, and overall filter size are too large; and the simple parallel split method will make the area of each sub-resonator smaller, making the perimeter area ratio of the resonator too large, resulting in each resonance
  • FIG. 1 is a schematic top view of Embodiment 1 of the present invention.
  • Embodiment 1 of the present invention is a circuit diagram of Embodiment 1 of the present invention.
  • FIG. 2a is another circuit diagram of Embodiment 1 of the present invention.
  • Embodiment 2 of the present invention is a circuit diagram of Embodiment 2 of the present invention.
  • FIG. 5 is an illustrative example 1a
  • Figure 6 is an illustrative example 1b
  • Figure 7 is an illustrative example 1c
  • Figure 8 is an illustrative example 1d
  • Fig. 9 is an explanatory example 1e.
  • the lower electrode 100, the piezoelectric layer 120 and the upper electrode 130 are shown.
  • A100 splits the traditional single resonator into four resonators R101, R102, R103 and R104, and its abstract circuit diagram is shown in Figure 2.
  • A100's resonator splitting is equivalent impedance splitting, which ensures that the equivalent impedance of the split resonator group is equal to the impedance of the original single resonator.
  • Figure 1 shows the basic structure of the 4 resonator and the specific connection method:
  • Each resonator (taking R101 as an example) has a lower electrode 100, a piezoelectric layer 120, and an upper electrode 130.
  • the upper electrode of R101 has a pin C100, and the upper electrode of R101 is electrically connected to the upper electrode of R102 C101, the lower electrode of R101 is electrically connected to the lower electrode of R102 C103; the lower electrode of R102 is electrically connected to the lower electrode of R103 C104; and the upper electrode of R103 and the upper electrode of R104 are electrically connected to C102, the lower electrode of R103 and the lower electrode of R104 are electrically connected to C105, and the upper electrode of R104 has a pin C106.
  • R101 and R102 are connected in parallel to ensure that the input voltages of the two resonators are absolutely the same, thereby ensuring that the electrical responses of the two resonators are exactly the same or opposite, thereby eliminating the influence of the resonator nonlinearity or enhancing the resonance characteristics; the same, The same effect can also be achieved by connecting R103 and R104 in parallel.
  • the above-mentioned upper electrode and the lower electrode are made of a multi-layer composite material of molybdenum or magnesium; at most, there is only an electrical connection between each two adjacent resonators, while acoustically maintaining isolation.
  • circuit structure of FIG. 2 can be further extended to: (1) In each parallel unit (such as the parallel unit U101 formed by R101 and R103), more sub-resonators are connected in parallel (as shown in FIG. 2a); (2) Add more resonators in series on each branch of each parallel unit; or (3) Add more parallel units in series on the basis of Figure 2 (such as the parallel unit formed by R101 and R103) (as shown in Figure 2b) Shown); or (4) combining the methods of (1), (2) and (3).
  • each parallel unit such as the parallel unit U101 formed by R101 and R103
  • the direction and composition of the C axis of the resonator can be in the following forms:
  • the C axis of all resonators is directed from the first potential to the second potential; or from the second potential to the first potential.
  • the C axis of some resonators is directed from the first potential to the second potential; the C axis of the other resonators is directed from the second potential to the first potential.
  • the C-axis of any two resonators in a certain unit assumes the configuration of S1 or S2. At least one of the remaining expansion units is in AU or SU relationship with the above units; further, if there are p units in SU relationship with each other, and q units are in AU relationship with the p units above, then p can be equal to q , And the circuit may have a certain symmetry (such as periodicity or axis symmetry) in the spatial arrangement.
  • the C-axis of at least two resonators in a unit is formed of A1 or A2.
  • the number of resonators with opposite C-axis directions in a unit can be equal,
  • the circuit may have a certain symmetry (such as periodicity or axis symmetry) in the spatial arrangement.
  • At least one of the remaining expansion units is in AU or SU relationship with the above units; further, if there are p units in SU relationship with each other, and q units are in AU relationship with the p units above, then p can be equal to q , And the circuit may have a certain symmetry (such as periodicity or axis symmetry) in the spatial arrangement.
  • A1 and A2 type crystal structure and the relationship between the AU and SU unit C-axis structure can effectively suppress the nonlinear effects of the circuit, such as the suppression of the 2nd and 3rd harmonics.
  • the piezoelectric layer is made of aluminum nitride material or zinc oxide material doped with rare earth elements.
  • the piezoelectric material is a thin film with a thickness of less than 10 microns.
  • the aluminum nitride film is in a polycrystalline or single crystal form, and the growth method is thin film sputtering (sputtering) or organic metal chemical vapor deposition (MOCVD).
  • the piezoelectric material can also be doped with a certain proportion of rare earth element impurities.
  • A200 splits the traditional single resonator into 6 resonators R201, R202, R203, R204, R205 and R206.
  • the abstract circuit diagram is shown in Figure 3.
  • A200's resonator splitting is equivalent impedance splitting, that is, to ensure that the equivalent impedance of the split resonator group is equal to the impedance of the original single resonator (for example, 50 ⁇ ).
  • Figure 3 shows the specific connection of 6 resonators:
  • the upper electrode of R201 has pin C200, and the upper electrode of R201 is electrically connected to the upper electrode of R202 C201; the lower electrode of R201 is electrically connected to the lower electrode of R203 C204; the lower electrode of R202 is electrically connected to the lower electrode of R203 C205; the upper electrode of R203 and the upper electrode of R204 are electrically connected C202; the upper electrode of R204 and the upper electrode of R205 are electrically connected C203; the lower electrode of R204 and the lower electrode of R206 are electrically connected C206; the lower electrode of R205 and R206 The lower electrode is electrically connected to C207, and the upper electrode of R206 has pin C208.
  • the above-mentioned upper electrode and the lower electrode are made of ruthenium multi-layer composite material or gold; at most, there is only electrical connection between each two adjacent resonators, while maintaining acoustic isolation.
  • circuit structure of FIG. 3 can be further expanded as follows: (1) more sub-resonators are connected in parallel in each parallel unit (such as the parallel unit formed by R201 and R202); (2) each in each parallel unit More sub-resonators are connected in series in the branch; or (3) more resonators are connected in series at the resonators in the series position of FIG. 3 (such as R203 and R206); or (4) based on FIG. 4 More units are connected in series (units U201 formed in the form of R201, R202 and R203, as shown in Figure 4); or (5) The ways of (1)-(4) are combined.
  • the direction and composition of the C axis of the resonator can be in the following forms:
  • the C axis of all resonators is directed from the first potential to the second potential; or from the second potential to the first potential.
  • the C axis of some resonators is directed from the first potential to the second potential; the C axis of the other resonators is directed from the second potential to the first potential.
  • the C-axis of any two resonators in a unit assumes the configuration of S1 or S2. At least one of the remaining expansion units is in AU or SU relationship with the above units; further, if there are p units in SU relationship with each other, and q units are in AU relationship with the p units above, then p can be equal to q , And the circuit may have a certain symmetry (such as periodicity or axis symmetry) in the spatial arrangement.
  • the C-axis of at least two resonators in a unit is configured as A1 or A2.
  • the number of resonators with opposite C-axis directions in a unit can be equal, and the circuit is in space There can be some symmetry in the arrangement.
  • At least one of the remaining expansion units is in AU or SU relationship with the above units; further, if there are p units in SU relationship with each other, and q units are in AU relationship with the p units above, then p can be equal to q , And the circuit may have a certain symmetry (such as periodicity or axis symmetry) in the spatial arrangement.
  • A1 and A2 type crystal structure and the relationship between the AU and SU unit C-axis structure can effectively suppress the nonlinear effects of the circuit, such as the suppression of the 2nd and 3rd harmonics.
  • the piezoelectric layer is made of zinc oxide or lead zirconate doped with rare earth elements.
  • the piezoelectric material is a thin film with a thickness of less than 10 microns.
  • the aluminum nitride film is in a polycrystalline or single crystal form, and the growth method is thin film sputtering (sputtering) or organic metal chemical vapor deposition (MOCVD).
  • the piezoelectric material can also be doped with a certain proportion of rare earth element impurities.
  • the C-axis orientation is defined as the crystal axis of the aluminum nitride piezoelectric layer in a bulk acoustic wave resonator or a group of bulk acoustic wave resonators relative to the two electrode pins applied to the bulk acoustic wave resonator or the resonator group Of the potential on the two pins.
  • resonators R1 and R2 are connected in parallel between two different potential points P1 and P2, and one electrode of the resonator R1 has a potential P1 and the other electrode has a potential P2.
  • the crystal axis of the piezoelectric layer in R1 is directed from the potential P1 side to the potential P2 side.
  • One electrode of the resonator R2 has a potential P1, and the other electrode has a potential P2.
  • the crystal axis of the piezoelectric layer in R2 is directed from the potential P2 side to the potential P1 side.
  • R1 and R2 are opposite.
  • the reverse of R1 and R2 also includes that the C axis of R1 points from P2 to P1 and the C axis of R2 points from P1 to P2.
  • the C axes of R1 and R2 are from P1 to P2, it is said that the C axes of R1 and R2 are in the same direction.
  • the case where the C axes of R1 and R2 are in the same direction also includes that the C axes of R1 and R2 are both directed from P2 to P1.
  • the parallel structure of R1 and R2 forms a C-axis pointing configuration, and the c-axis of R1 and R2 are in the same direction, then the C-axis of R1 and R2 is said to be a parallel C-axis configuration (referred to as S1 for short) Configuration), otherwise called anti-parallel C-axis configuration (referred to as A1 configuration).
  • Example 1b if R1 and R2 are in a series relationship, when the C-axis of R1 and R2 are in the same direction, the C-axis of R1 and R2 is said to be in the same-direction series C-axis configuration (referred to as S2 configuration); When the C-axis of R1 and R2 are reversed, the C-axis of R1 and R2 is said to be a reverse series C-axis configuration (referred to as the A2 configuration).
  • the C-axis configuration of some two resonators can also be defined.
  • R1 and R2 form a parallel unit, and then in series with R3.
  • the c-axis of R1 and R2 forms A1
  • the C-axis of R1 and R3 forms A2
  • the C-axis of R2 and R3 forms S2.
  • the resonator circuit can be expanded by a certain structural unit.
  • the structure of the U1 unit is: R1 and R2 are connected in parallel and then in series with R3, and the structure in the U2 unit is the circuit structure of the U1 unit. repeat.
  • the C axis of each resonator (for example, R1) in U1 is the same as the C axis direction of the corresponding resonator (for example, R1') in U2
  • U1 and U2 have the same
  • the C-axis configuration of the unit (the C-axis configuration of the two units for short is SU relationship).
  • the split structure resonator designed by the present invention can increase the power capacity by splitting one resonator into multiple under the premise that the equivalent impedance is the same.
  • the use of simple series splitting will make the area of each sub-resonator larger. Although the larger area brings about a reduction in power density, the thermal gradient and temperature distribution in each resonator are more uneven, resulting in the resonator at high power. Under the input, the performance drops sharply; at the same time, the increase in area also causes the resonator rigidity to deteriorate, which aggravates the resonator's deformation under stress, which leads to a decrease in the resonator's Q value, which ultimately causes device performance degradation, poor stability, and shortened life.
  • the present invention adopts a circuit configuration mode combined in parallel and series splitting mode, so that the area of each sub-resonator is moderate, and at the same time, the power capacity of the resonator is improved.

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Abstract

本发明公开了一种拆分结构谐振器，所述拆分结构谐振器由若干个子谐振器构成谐振器群，所述谐振器群的等效阻抗等同于原单一谐振器的阻抗；每两个相邻所述子谐振器之间至多只存在电学连接，而声学上保持隔离；每个所述的子谐振器都包括下电极、压电层、上电极；本发明不仅增大了等效面积，而且还能增加谐振器的周长面积比，从而提高谐振器的散热性能和电子器件整体的功率容量。

Description

一种拆分结构谐振器 技术领域
本发明涉及一种谐振器，具体涉及一种拆分结构谐振器。
背景技术
利用压电薄膜在厚度方向的纵向谐振所制成的薄膜体波谐振器，在手机通讯和高速串行数据应用等方面已经成为声表面波器件和石英晶体谐振器的一个可行的替代。射频前端体波滤波器/双工器提供优越的滤波特性，例如低插入损耗，陡峭的过渡带，较强的抗静电放电(ESD)能力。随着目前通讯等领域对滤波器和谐振器等电子器件功率容量要求的不断提高，滤波器和谐振器的发热量显著增大。高发热带来的高温会造成器件Q值和机电耦合系数大幅下降；此外高温还会造成由谐振器的频率发生漂移；另外高温还会降低器件整体寿命。以上诸多问题最终导致有谐振器构成的滤波器的性能参数如带宽，插入损耗，滚降特性，带外抑制等发生严重劣化。
应对发热问题的传统手段是增大谐振器的面积。这种方法在一定功率范围内可有效降低谐振器中的功率密度，从而降低谐振器的工作温度。但单纯依靠增加面积的方法已不能满足当前的谐振器对功率容量的要求，需要对传统结构进一步改进。
发明内容
本发明的目的在于提供一种拆分结构谐振器，不仅增大了等效面积，而且还能增加谐振器的周长面积比，从而提高谐振器的散热性能和电子器件整体的功率容量。
一种拆分结构谐振器，所述拆分结构谐振器是由若干个子谐振器构成的谐振器群，所述谐振器群的等效阻抗等同于原单一谐振器的阻抗；每两个相邻所述子谐振器之间至多只存在电学连接，而声学上保持隔离；每个所述的子谐振器都包括下电极、压电层、上电极。
可选地，所述谐振器群上设置有两个引脚，且两个引脚分别占据第一电位点和第二电位点，并与其他电子元件连接。
可选地，所述子谐振器的上电极和/或下电极与其相邻的子谐振器的上电极和 /或下电极电学连接。
可选地，所述子谐振器压电层的C轴从一个电位点指向另一个电位点；
可选地，一部分谐振器压电层的C轴可由第一电位点指向第二电位点；另一部分谐振器压电层的C轴可由第二电位点指向第一电位点。
可选地，所述谐振器群的电路由若干个单元串联而成；在每个所述单元中并联入n个(n＞1)的子谐振器和/或所述电路串联入m个(m＞1)单元。
可选地，所述单元具有一定的谐振器压电层‘C轴指向构成’，所述C轴指向构成要求：所述单元内某一子谐振器与其余子谐振器的C轴指向相同或所述单元内某一子谐振器与其余子谐振器中至少一个的C轴指向相反。
可选地，某个所述单元与其余所述单元具有一定的‘单元C轴构成’关系，所述关系要求：某个所述单元和其余所述单元具有相同单元C轴构成关系或某个所述单元和其余所述单元中至少一个单元具有相反单元C轴构成关系。
可选地，所述单元由至少两个相邻的子谐振器并联并与另外至少一个子谐振器串联而成。
可选地，所述上电极与所述下电极由金属、金属的多层复合材料或合金制成；所述金属包括以下至少之一：钼、钌、金、镁、铝、钨、钛、铬、铱、锇。
可选地，所述压电层的材料包括以下至少之一：氮化铝，氧化锌，钛锆酸铅(PZT)，所述压电材料中掺杂稀土元素。
本发明的有益效果在于：在等效阻抗相同的前提下，将一个谐振器拆分为多个可提高功率容量。采用单纯串联拆分的方式会使每个子谐振器面积变大，虽然面积变大带来功率密度的减小，但如果谐振器面积过大则每个谐振器内热梯度和温度分布更为不均匀，导致谐振器在高功率输入下性能急剧下降；同时面积增大还造成谐振器刚性变差，加剧谐振器在应力作用下的形变，从而导致谐振器Q值下降，最终造成器件性能劣化，稳定性变差，寿命缩短、滤波器整体尺寸过大等问题；而单纯采用并联拆分方式，又会使每个子谐振器面积变小，使谐振器的周长面积比过大，导致每个谐振器的能量损耗率上升，从而降低每个谐振器的Q值，同样会影响谐振器的性能。因此，本发明为了克服上述问题，采用了并联串联拆分形式结合的电路构成方式，使每个子谐振器面积适中，同时提升了谐振器的功 率容量。
附图说明
图1为本发明实施例1俯视示意图；
图2为本发明实施例1的电路图；
图2a为本发明实施例1的电路图另一种方式；
图2b为本发明实施例1的电路图另一种方式；
图2c为本发明实施例1的电路图另一种方式；
图3为本发明实施例2的电路图；
图4为本发明实施例2的电路图另一种方式；
图5为说明例1a；
图6为说明例1b；
图7为说明例1c；
图8为说明例1d；
图9为说明例1e。
图中下电极100，压电层120和上电极130。
具体实施方式
以下为本发明的较佳实施方式，但并不因此而限定本发明的保护范围。
实施例1：
A100将传统的单一谐振器分裂为4个谐振器R101、R102、R103和R104，其抽象电路图为图2所示。
A100的谐振器分裂原则为等效阻抗分裂，即确保分裂后谐振器群的等效阻抗等同于原单一谐振器的阻抗。
图1给出了4谐振器的基本结构示意图和的具体相连方式：
每个谐振器(以R101为例)都具有下电极100，压电层120和上电极130。
R101的上电极具有引脚C100，且R101的上电极与R102的上电极发生电学连接C101，R101的下电极与R102的下电极发生电学连接C103；R102的下电极与R103的下电极发生电学连接C104；且R103的上电极与R104的上电极发生电学连接C102，R103的下电极与R104的下电极发生电学连接C105，R104的上电极具有引 脚C106。
此处将R101和R102进行并联保证两个谐振器输入电压绝对相同，从而保证这两个谐振器的电学响应完全相同或相反，从而消除谐振器非线性造成的影响或者增强谐振特性；同样的，将R103和R104进行并联也可以达到相同效果。
此处需要说明的是，上述的上电极与所述下电极由钼的多层复合材料或镁制成；每两个相邻谐振器之间至多只存在电学连接，而声学上保持隔离。
此外图2的电路结构可进一步拓展为：(1)在每个并联单元中(如R101和R103构成的并联单元U101)并联入更多的子谐振器(如图2a所示)；(2)在每个并联单元的每个支路上串连如更多谐振器；或(3)在图2的基础上串联入更多的并联单元(如R101和R103构成的并联单元)(如图2b所示)；或(4)将(1)、(2)和(3)的方式进行结合。
对于图2所示电路及按上述方式拓展的电路，其中谐振器C轴的指向和构成方式可采用如下形式：
(1)全部谐振器的C轴均由第一电位指向第二电位；或由第二电位指向第一电位。
(2)部分谐振器的C轴由第一电位指向第二电位；另一部分谐振器的C轴由第二电位指向第一电位。
在情况(2)下，可选的，某个单元内(如U101)的任意两个谐振器的C轴均呈现S1或S2构成。其余的拓展单元中至少有一个与上述单元成AU或SU关系；进一步的，若存在p个单元相互之间为SU关系，而q个单元与上述p个单元呈AU关系，那么p可以等于q，且电路在空间排布上可具有某种对称性(例如周期性或轴对称性等)。
或者可选的，某个单元内(如U101)的至少存在两个谐振器的C轴呈现A1或A2构成，进一步的，在某个单元内C轴方向相反的谐振器的数量可对等，且电路在空间排布上可具有某种对称性(例如周期性或轴对称性等)。
其余的拓展单元中至少有一个与上述单元成AU或SU关系；进一步的，若存在p个单元相互之间为SU关系，而q个单元与上述p个单元呈AU关系，那么p可以等于q，且电路在空间排布上可具有某种对称性(例如周期性或轴对称性等)。
采用A1和A2型晶向构成、以及AU和SU单元C轴构成关系可有效抑制电路的非线性效应，如抑制2次及3次谐波等。
上述压电层由氮化铝材料或掺杂稀土元素的氧化锌材料制成。所述压电材料为厚度小于10微米的薄膜。氮化铝薄膜为多晶形态或者单晶形态，生长方式为薄膜溅射(sputtering)或者有机金属化学气相沉积法(MOCVD)。此外，所述压电材料还可掺入一定比例稀土元素杂质。
以上方式要求最终等效阻抗保持不变。
实施例2：
A200将传统的单一谐振器分裂为6个谐振器R201、R202、R203、R204、R205和R206。其抽象电路图为图3所示。
A200的谐振器分裂原则为等效阻抗分裂，即确保分裂后谐振器群的等效阻抗等同于原单一谐振器的阻抗(例如50Ω)。
图3给出了6谐振器的具体相连方式：
R201的上电极具有引脚C200，且R201的上电极与R202的上电极发生电学连接C201；R201的下电极与R203的下电极发生电学连接C204；R202的下电极与R203的下电极发生电学连接C205；R203的上电极与R204的上电极发生电学连接C202；R204的上电极与R205的上电极发生电学连接C203；R204的下电极与R206的下电极发生电学连接C206；R205的下电极与R206的下电极发生电学连接C207，R206的上电极具有引脚C208。
此处需要说明的是，上述的上电极与所述下电极由钌的多层复合材料或金制成；每两个相邻谐振器之间至多只存在电学连接，而声学上保持隔离。
此外图3的电路结构可进一步拓展为：(1)在每个并联单元中(如R201和R202构成的并联单元)并联入更多的子谐振器；(2)在每个并联单元中每个支路中串联入更多的子谐振器；或(3)在图3的串联位置的的谐振器处(如R203和R206处)串联入更多谐振器；或(4)在图4的基础上串联入更多的单元(形如R201、R202和R203构成的单元U201，如图4所示)；或(5)将(1)-(4)的方式进行结合。
对于图3所示电路及按上述方式拓展的电路，其中谐振器C轴的指向和构成 方式可采用如下形式：
(1)全部谐振器的C轴均由第一电位指向第二电位；或由第二电位指向第一电位。
(2)部分谐振器的C轴由第一电位指向第二电位；另一部分谐振器的C轴由第二电位指向第一电位。
在情况(2)下，某个单元内的任意两个谐振器的C轴均呈现S1或S2构成。其余的拓展单元中至少有一个与上述单元成AU或SU关系；进一步的，若存在p个单元相互之间为SU关系，而q个单元与上述p个单元呈AU关系，那么p可以等于q，且电路在空间排布上可具有某种对称性(例如周期性或轴对称性等)。
或者可选的，某个单元内的至少存在两个谐振器的C轴呈现A1或A2构成，进一步的，在某个单元内C轴方向相反的谐振器的数量可对等，且电路在空间排布上可具有某种对称性。
其余的拓展单元中至少有一个与上述单元成AU或SU关系；进一步的，若存在p个单元相互之间为SU关系，而q个单元与上述p个单元呈AU关系，那么p可以等于q，且电路在空间排布上可具有某种对称性(例如周期性或轴对称性等)。
采用A1和A2型晶向构成、以及AU和SU单元C轴构成关系可有效抑制电路的非线性效应，如抑制2次及3次谐波等。
上述压电层由氧化锌或掺杂稀土元素的钛锆酸铅料制成。所述压电材料为厚度小于10微米的薄膜。氮化铝薄膜为多晶形态或者单晶形态，生长方式为薄膜溅射(sputtering)或者有机金属化学气相沉积法(MOCVD)。此外，所述压电材料还可掺入一定比例稀土元素杂质。
以上方式要求最终等效阻抗保持不变。
实施例3
本实施例为本发明子谐振器C轴指向和C轴指向构成的预备性说明：
C轴指向定义为一个体声波谐振器或谐振器群中某个体声波谐振器中氮化铝压电层中的晶轴相对于施加于体声波谐振器两个电极引脚之上或谐振器群的两个引脚上的电位的关系。
在说明例1a中，在两个相异的电位点P1和P2之间并联有谐振器R1和R2， 谐振器R1的一侧电极具有电位P1,另一侧电极具有电位P2。而R1中压电层的晶轴从电位P1侧指向电位P2侧。
谐振器R2的一侧电极具有电位P1,另一侧电极具有电位P2。而R2中压电层的晶轴从电位P2的侧指向电位P1侧。
那么对于给定的两个参考电位点P1和P2，则称R1和R2的C轴是相反的。此外，R1和R2反向的情况还包含R1的C轴由P2指向P1同时R2的C轴由P1指向P2。
若R1和R2的C轴均为为由P1指向P2，则称R1和R2的C轴同向。此外R1和R2的C轴同向的情况还包含R1和R2的C轴均为为由P2指向P1。
上述对于R1和R2的C轴方向描述规则同样适用于说明例1b所示的串联情况，而C轴指向构成指的是处于一定电学链接关系的另一个振器的C轴指向的间的相对关系。
在说明例1a中，R1和R2的并联结构就形成了一种C轴指向构成，R1和R2的c轴同向，则称R1和R2的C轴构成为同向并联C轴构成(简称S1构成)，否则称为反向并联C轴构成(简称A1构成)。
同样的，如说明例1b所示，若是R1和R2是串联关系，当R1和R2的C轴同向时，称R1和R2的C轴构成为同向串联C轴构成(简称S2构成)；当R1和R2的C轴反向时，称R1和R2的C轴构成为反向串联C轴构成(简称A2构成)。
对于串并联结合的电路，同样可以定义其中某两个谐振器的C轴的构成。如说明例1c所示,R1和R2构成并联单元，然后再和R3串联。其中R1和R2的c轴形成A1构成，R1和R3的C轴形成A2构成，而R2和R3的C轴形成S2构成。
通常谐振器电路还可以以某个结构单元进行拓展，例如说明例1d所示，U1单元中具有的结构为：R1和R2并联再和R3串联，而U2单元内的结构为U1单元电路结构的重复。这时，若如图1d所示，U1中每个谐振器(例如R1)的C轴均与其在U2中对应的谐振器(例如R1’)的C轴方向相同,则称U1和U2具有相同的单元C轴构成(简称两个单元的C轴构成呈SU关系)。
若情况如图1e所示：即U1中每个谐振器(例如R1)的C轴均与其在U2中对应的谐振器(例如R1’)的C轴方向相反，则称U1和U2具有相反的单元C轴构 成(简称两个单元的C轴构成呈AU关系)。
本发明设计的拆分结构谐振器，在等效阻抗相同的前提下，将一个谐振器拆分为多个可提高功率容量。采用单纯串联拆分的方式会使每个子谐振器面积变大，虽然面积变大带来功率密度的减小，但每个谐振器内热梯度和温度分布更为不均匀，导致谐振器在高功率输入下性能急剧下降；同时面积增大还造成谐振器刚性变差，加剧谐振器在应力作用下的形变，从而导致谐振器Q值下降，最终造成器件性能劣化，稳定性变差，寿命缩短、滤波器整体尺寸过大等问题；而单纯采用并联拆分方式，又会使每个子谐振器面积变小，使谐振器的周长面积比过大，导致每个谐振器的能量损耗率上升，从而降低每个谐振器的Q值，同样会影响谐振器的性能。因此，本发明为了克服上述问题，采用了并联串联拆分形式结合的电路构成方式，使每个子谐振器面积适中，同时提升了谐振器的功率容量。
以上仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (13)

  1. 一种拆分结构谐振器，其特征在于：所述拆分结构谐振器是由若干个子谐振器构成的谐振器群，所述谐振器群的等效阻抗等同于原单一谐振器的阻抗；每两个相邻所述子谐振器之间只存在电学连接，而声学上保持隔离；每个所述的子谐振器都包括下电极、压电层、上电极。
  2. 根据权利要求1所述的一种拆分结构谐振器，其特征在于：所述谐振器群上设置有两个引脚，且两个引脚分别占据第一电位点和第二电位点，并与其他电子元件连接。
  3. 根据权利要求1所述的一种拆分结构谐振器，其特征在于：所述子谐振器的上电极和/或下电极与其相邻的子谐振器的上电极和/或下电极电学连接。
  4. 根据权利要求1所述的一种拆分结构谐振器，其特征在于：所述子谐振器压电层的C轴从一个电位点指向另一个电位点。
  5. 根据权利要求4所述的一种拆分结构谐振器，其特征在于：一部分谐振器压电层的C轴可由第一电位点指向第二电位点；另一部分谐振器压电层的C轴可由第二电位点指向第一电位点。
  6. 根据权利要求1所述的一种拆分结构谐振器，其特征在于：所述谐振器群的电路由若干个单元串联而成；在每个所述单元中并联入n个(n＞1)的子谐振器和/或所述电路串联入m个(m＞1)单元。
  7. 根据权利要求4、5或6所述的一种拆分结构谐振器，其特征在于：所述单元具有一定的谐振器压电层‘C轴指向构成’，所述C轴指向构成要求：所述单元内某一子谐振器与其余子谐振器的C轴指向相同或所述单元内某一子谐振器与其余子谐振器中至少一个的C轴指向相反。
  8. 根据权利要求7所述的一种拆分结构谐振器，其特征在于：某个所述单元与其余所述单元具有一定的‘单元C轴构成’关系，所述关系要求：某个所述单元和其余所述单元具有相同单元C轴构成关系或某个所述单元和其余所述单元中至少一个单元具有相反单元C轴构成关系。
  9. 权利要求6所述的一种拆分结构谐振器，其特征在于：所述单元由至少两个相邻的子谐振器并联再与另外至少一个子谐振器串联而成。
  10. 根据权利4、5或9所述的一种拆分结构谐振器，其特征在于：所述单元 具有一定的谐振器压电层‘C轴指向构成’，所述C轴指向构成要求：所述单元内某一子谐振器与其余子谐振器的C轴指向相同或所述单元内某一子谐振器与其余子谐振器中至少一个的C轴指向相反。
  11. 根据权利要求10所述的一种拆分结构谐振器，其特征在于：某个所述单元与其余所述单元具有一定的‘单元C轴构成’关系，所述关系要求：某个所述单元和其余所述单元具有相同单元C轴构成关系或某个所述单元和其余所述单元中至少一个单元具有相反单元C轴构成关系。
  12. 据权利要求1或3所述的一种拆分结构谐振器，其特征在于：所述上电极与所述下电极由金属、金属的多层复合材料或合金制成；所述金属包括以下至少之一：钼、钌、金、镁、铝、钨、钛、铬、铱、锇。
  13. 据权利要求1所述的一种拆分结构谐振器，其特征在于：所述压电层的材料包括以下至少之一：氮化铝，氧化锌，钛锆酸铅(PZT)，所述压电材料中掺杂稀土元素。
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