WO2020133003A1 - 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备 - Google Patents

包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备 Download PDF

Info

Publication number
WO2020133003A1
WO2020133003A1 PCT/CN2018/124084 CN2018124084W WO2020133003A1 WO 2020133003 A1 WO2020133003 A1 WO 2020133003A1 CN 2018124084 W CN2018124084 W CN 2018124084W WO 2020133003 A1 WO2020133003 A1 WO 2020133003A1
Authority
WO
WIPO (PCT)
Prior art keywords
acoustic resonator
eaves
raised
acoustic
convex
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/124084
Other languages
English (en)
French (fr)
Inventor
杨清瑞
庞慰
张孟伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin University
ROFS Microsystem Tianjin Co Ltd
Original Assignee
Tianjin University
ROFS Microsystem Tianjin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin University, ROFS Microsystem Tianjin Co Ltd filed Critical Tianjin University
Priority to PCT/CN2018/124084 priority Critical patent/WO2020133003A1/zh
Publication of WO2020133003A1 publication Critical patent/WO2020133003A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Definitions

  • the present invention relates to the field of communications, and in particular to an acoustic resonator including an annular convex beam eave structure.
  • Bulk acoustic wave filters have the advantages of low insertion loss, high rectangular coefficient, and high power capacity. Therefore, bulk acoustic wave filters are widely used in contemporary wireless communication systems, and bulk acoustic wave filters determine the quality of RF signals entering and leaving the communication system. Important components. Bulk acoustic wave resonators are cascaded to form a bulk acoustic wave filter, and each stage of the bulk acoustic wave filter includes a series resonator and a parallel resonator. The performance of the bulk acoustic wave filter is determined by the bulk acoustic wave resonator that constitutes it.
  • the resonance frequency of a bulk acoustic wave resonator determines the operating frequency of the filter
  • the effective electromechanical coupling coefficient of the bulk acoustic wave resonator determines the bandwidth of the filter
  • the quality factor of the bulk acoustic wave resonator determines the insertion loss of the filter.
  • the quality factor (Qs) or parallel impedance (Rs) at the series resonance frequency of the bulk acoustic wave resonator is usually determined by the electrode loss and material loss, while the quality factor (Qp) or parallel impedance (Rp) at the parallel resonance frequency of the bulk acoustic wave resonator Usually affected by boundary sound wave leakage. Therefore, when the resonator material and the laminated structure are determined, the room for improvement of Qs (or Rs) is limited, and it is difficult to improve the quality factor of the resonator.
  • the present invention provides an acoustic resonator including an annular convex beam eave structure, which can effectively improve the quality factor or parallel impedance of the acoustic resonator.
  • an embodiment of the present invention provides an acoustic resonator including a ring-shaped convex beam eaves structure, the acoustic resonator includes a top electrode, a piezoelectric layer, a bottom electrode, and an acoustic reflection structure sequentially connected in a positional relationship As well as the base.
  • the edge of the top electrode has an eaves structure and the eaves structure is located in an effective area of the acoustic resonator, and there is an air gap between the eaves structure and the piezoelectric layer.
  • the edge of the top electrode also has a beam structure and a part of the beam structure is located in an effective area of the acoustic resonator, and there is an air gap between the beam structure and the piezoelectric layer.
  • the position corresponding to the eaves portion structure has a first convex structure, and the position corresponding to the beam portion structure has a second convex structure.
  • An embodiment of the present invention also provides a filter including the above-mentioned acoustic resonator including a ring-shaped raised beam eave structure.
  • An embodiment of the present invention also provides an electronic device including the above-mentioned filter or the above-mentioned acoustic resonator including an annular convex beam eave structure.
  • the present invention has an eaves structure at the edge of the top electrode, and the eaves structure is located in an effective area of the acoustic resonator, and there is an air gap between the eaves structure and the piezoelectric layer, and The acoustic impedance in the air gap does not match the acoustic impedance in the effective area of the acoustic resonator, which can further reflect the sound of the transverse mode in the acoustic resonator back into the acoustic resonator, and a part of the acoustic wave energy becomes perpendicular to the acoustic resonator Mode waves, thereby improving the quality of the acoustic resonator due to the numerical value or parallel impedance.
  • the edge of the top electrode also has a beam structure and the beam structure is located in an effective area of the acoustic resonator, and there is an air gap between the beam structure and the piezoelectric layer. Because the acoustic impedance in the air gap under the beam structure does not match the acoustic impedance in the effective area of the acoustic resonator, it can further reflect the sound of the transverse mode in the acoustic resonator back into the resonator, and a part of the acoustic wave energy is converted into acoustic The wave in the vertical mode of the resonator, so that the quality of the acoustic resonator is further improved by the value or the parallel impedance.
  • the position corresponding to the eaves structure has a first convex structure
  • the position corresponding to the beam portion structure has a second convex structure
  • the first convex structure and the second convex structure further enhance the suspension
  • the ability of the structure to limit sound waves can further improve the sound wave mode of the piston perpendicular to the surface of the piezoelectric layer, which can further effectively improve the quality factor value.
  • the acoustic resonator further includes a passivation layer above the top electrode; the first convex structure is sandwiched between the passivation layer and the eaves structure, the first Two convex structures are sandwiched between the passivation layer and the beam structure.
  • the length of the eaves structure protruding from the top electrode is a first preset value
  • the length of the beam structure corresponding to the effective area of the acoustic resonator is a second preset value
  • the range of the first preset value and the second preset value is 0.5um to 7um.
  • the first preset value is an integer multiple of the center distance between the two first raised structures And the length of the first raised structure is greater than the distance between two adjacent first raised structures;
  • the second preset value is an integer multiple of the center distance between the two second raised structures And the length of the second raised structure is greater than the distance between two adjacent second raised structures.
  • the acoustic resonator further includes a passivation layer covering the surface of the top electrode; the first convex structure is located above the passivation layer and corresponds to the eaves structure, the first Two convex structures are located on the passivation layer and correspond to the beam structure.
  • the length of the first convex structure is less than or equal to the length of the eaves structure protruding from the top electrode, and the length of the second convex structure is less than or equal to the beam structure corresponding to the Describe the length of the effective area of the acoustic resonator.
  • the length of the first convex structure is less than or equal to one third of the length of the eaves structure protruding from the top electrode, and the first convex structure is located at the edge of the eaves structure .
  • the length of the second convex structure is less than or equal to one third of the length of the beam structure in the effective area of the acoustic resonator, and the second convex structure is located at the The edge of the beam structure in the effective area.
  • the acoustic resonator further includes a passivation layer covering the surface of the top electrode; the first convex structure is located in the eaves structure, and the top electrode is sandwiched by the passivation layer And the first raised structure; the second raised structure is located in the beam structure, and the top electrode is sandwiched between the passivation layer and the second raised structure.
  • the acoustic reflection structure is located on the upper surface of the substrate or embedded inside the substrate.
  • the acoustic reflection structure is embedded inside the substrate, and the bottom electrode is deposited on the upper surface of the acoustic reflection structure and covers the acoustic reflection structure.
  • the edge of the bottom electrode is etched into a slope, and the slope is located outside the sound reflection structure; wherein, the cross-section of the slope is stepped or vertical.
  • the materials of the top electrode and the bottom electrode are any of the following: osmium, magnesium, gold, tungsten, molybdenum, platinum, ruthenium, iridium, germanium, copper, titanium, titanium tungsten, aluminum, chromium , Gold doped with arsenic.
  • the material of the first convex structure and the second convex structure is a medium or a metal.
  • the material of the piezoelectric layer is any one of the following: aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, quartz, potassium niobate, and lithium tantalate.
  • the material of the piezoelectric layer is aluminum nitride doped with rare earth elements.
  • the rare earth element is any one or any combination of the following: scandium, yttrium, magnesium, titanium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, Thulium, ytterbium, and lutetium are optional, and the material of the first convex structure and the second convex structure is a medium or a metal.
  • the projection of the second convex structure is located at the edge of the effective area of the acoustic resonator.
  • FIG. 1 is a schematic structural view of an acoustic resonator including a ring-shaped raised beam eave structure in the first embodiment
  • FIG. 2 is a cross-sectional view of an acoustic resonator including an annular convex beam eave structure in the first embodiment
  • FIG. 3 is a cross-sectional view of an acoustic resonator including an annular convex beam eave structure in the second embodiment
  • FIG. 4 is another cross-sectional view of an acoustic resonator including an annular convex beam eave structure in the second embodiment
  • FIG. 5 is a graph showing the relationship between the length of the first convex structure and the effective electromechanical coupling coefficient of the acoustic resonator
  • FIG. 6 is a graph showing the relationship between the length of the first convex structure and the series resistance of the acoustic resonator
  • FIG. 8 is another cross-sectional view of an acoustic resonator including an annular convex beam eave structure in the second embodiment
  • FIG. 9 is a cross-sectional view of an acoustic resonator including a ring-shaped raised beam eave structure in a third embodiment.
  • the first embodiment of the present invention relates to an acoustic resonator including an annular convex beam eave structure.
  • the acoustic resonator includes a top electrode 101, a piezoelectric layer 102, a bottom electrode 103, an acoustic reflection structure 104, and a substrate 105 that are sequentially connected in a positional relationship.
  • the acoustic reflection structure 104 may be, but not limited to, an acoustic mirror.
  • the acoustic reflection structure 104 is located on the upper surface of the substrate 105 or embedded in the substrate 105.
  • the acoustic reflection structure 104 in this embodiment is composed of a cavity embedded in the substrate 105, but any other acoustic mirror structure such as a Bragg reflector is also applicable.
  • the acoustic reflection structure 104 is embedded inside the substrate 105, and the bottom electrode 103 is deposited on the upper surface of the acoustic reflection structure 104 and covers the acoustic reflection structure 104.
  • the edge of the bottom electrode 103 may be etched into a slope, and the slope is located outside the acoustic reflection structure 104.
  • the cross section of the inclined plane may be but not limited to stepped or vertical, etc. The cross section of the inclined plane may also have other similar structures.
  • the materials of the top electrode 101 and the bottom electrode 103 are any of the following: gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru) , Iridium (Ir), titanium tungsten (TiW), aluminum (Al), titanium (Ti), osmium (Os), magnesium (Mg), gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt) ), ruthenium (Ru), iridium (Ir), germanium (Ge), copper (Cu), aluminum (Al), chromium (Cr), arsenic doped gold and other similar metals.
  • the material of the piezoelectric layer 102 is any one of the following: aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz (Quartz), potassium niobate (KNbO3) or lithium tantalate (LiTaO3) and other materials. And the material is a piezoelectric thin film, the thickness is less than 10 microns.
  • the aluminum nitride film is in a polycrystalline or single crystal form, and the growth method is thin film sputtering (sputtering) or organic metal chemical vapor deposition (MOCVD).
  • the material of the piezoelectric layer 102 is aluminum nitride doped with rare earth elements.
  • the rare earth element is any one or any combination of the following: scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr) , Neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm) , Ytterbium (Yb), Lutetium (Lu), etc.
  • the edge of the top electrode 101 has an eaves structure 106, and the eaves structure 106 is located in an effective area of the acoustic resonator, and there is an air gap 111 between the eaves structure 106 and the piezoelectric layer 102 , And the acoustic impedance in the air gap 111 does not match the acoustic impedance in the effective area of the acoustic resonator, which can further reflect the sound of the transverse mode in the acoustic resonator back into the acoustic resonator, and a part of the sound wave energy is converted into acoustic
  • the wave in the vertical mode of the resonator improves the quality of the acoustic resonator due to the numerical value or parallel impedance.
  • the edge of the top electrode 101 also has a beam structure 107 and a part of the beam structure 107 is located in an effective area of the acoustic resonator.
  • the beam structure 107 and the piezoelectric layer 102 Between the air gap 111.
  • the acoustic impedance in the air gap 111 under the beam structure 107 does not match the acoustic impedance in the effective area of the acoustic resonator, it can further reflect the sound of the transverse mode in the acoustic resonator back into the resonator, and a part of the acoustic wave energy is converted into Waves in a mode perpendicular to the acoustic resonator, thereby further improving the quality of the acoustic resonator due to numerical values or parallel impedance.
  • the eaves structure and beam structure are collectively referred to as beam eaves structure.
  • the position corresponding to the eaves structure 106 has a first convex structure 108
  • the position corresponding to the beam structure 107 has a second convex structure 109
  • the first convex structure 108 and the second convex The structure 109 further enhances the ability of the suspended structure to limit the sound wave, so that the sound wave mode of the piston perpendicular to the surface of the piezoelectric layer 102 can be further improved, so that the quality factor value can be further effectively improved.
  • the materials of the first raised structure 108 and the second raised structure 109 are dielectric or metal.
  • the acoustic resonator further includes a passivation layer 110 on the top electrode 101.
  • the first raised structure 108 is sandwiched between the passivation layer 110 and the eaves structure 106, and the second raised structure 109 is sandwiched between the passivation layer 110 and the beam structure Between 107.
  • the commonly used top electrode 101 is molybdenum. This material is very easy to oxidize and will affect the performance of the acoustic resonator. Therefore, a passivation layer 110 is deposited on the top electrode 101 to protect the top electrode 101.
  • the commonly used passivation layer 110 is aluminum nitride.
  • the length of the eaves structure 106 protruding from the top electrode 101 is a first preset value d1
  • the length of the beam structure 107 corresponding to the effective area of the acoustic resonator is Two preset values d2.
  • a plurality of the acoustic resonators are cascaded to form a filter, and each stage of the filter includes a series resonator and a parallel resonator.
  • the range of the first preset value d1 and the second preset value d2 is 0.5um (micrometer) to 7um.
  • the second embodiment of the present invention relates to an acoustic resonator including an annular convex beam eave structure.
  • the first convex structure is sandwiched between the passivation layer and the eaves structure, and the second convex
  • the starting structure is sandwiched between the passivation layer and the beam structure.
  • the first convex structure and the second convex structure are both located on the passivation layer.
  • the acoustic resonator further includes a passivation layer 110 covering the surface of the top electrode 101.
  • the commonly used top electrode 101 is molybdenum. This material is very easy to oxidize and will affect the performance of the acoustic resonator. Therefore, a passivation layer 110 is deposited on the top electrode 101 to protect the top electrode 101.
  • the commonly used passivation layer 110 is aluminum nitride.
  • the first convex structure 108 is located above the passivation layer 110 and corresponds to the eaves structure 106.
  • the second convex structure 109 is located above the passivation layer 110 and corresponds to the beam structure 107.
  • the length of the eaves structure 106 protruding from the top electrode 101 is a first preset value d1
  • the length of the beam structure 107 corresponding to the effective area of the acoustic resonator is Two preset values d2.
  • the length d3 of the first convex structure 108 is less than or equal to d1.
  • the length d4 of the second convex structure 109 is less than or equal to d2.
  • the length of the first convex structure 108 may be designed to be less than or equal to the length of the eaves structure 106 protruding from the length of the top electrode 101 one third.
  • the projection position of the first convex structure 108 perpendicular to the bottom electrode 103 is within the projection position of the eaves structure 106 perpendicular to the projection position of the bottom electrode 103.
  • the projection of the second convex structure is located in the effective area of the acoustic resonator, and the space of the second convex structure can also be saved and the cost is saved.
  • the first convex structure 108 is located at the edge of the eaves structure 106.
  • the second convex structure 109 is located at the edge of the effective area of the acoustic resonator at a projection position perpendicular to the bottom electrode 103.
  • d1 3um
  • the length of d3 is controlled to be 1um, 2um, and 3um, respectively.
  • the experimental results show that when d3 is 1um, the effective electromechanical coupling coefficient of the acoustic resonator The maximum is 8.35%, as shown in Figure 5.
  • the series resistance Rs is the smallest, 0.456 ⁇ , as shown in FIG. 6.
  • the parallel resistance Rp is the largest, 3400 ⁇ , as shown in FIG. 7.
  • the number of the first protruding structures 108 and the second protruding structures 109 can be designed to be multiple according to actual design requirements. Specifically, there are at least two first raised structures 108, and at least two second raised structures 109.
  • FIG. 8 takes two first protrusion structures 108 and two second protrusion structures 109 as examples, and does not limit the number of first protrusion structures 108 and second protrusion structures 109 to two.
  • the first convex structure 108 and the second convex structure 109 further enhance the ability of the suspended structure to limit the sound wave, so the sound wave mode of the piston perpendicular to the surface of the piezoelectric layer 102 can be further improved, which can further effectively improve the quality. Value.
  • the third embodiment of the present invention relates to an acoustic resonator including an annular convex beam eave structure.
  • the first convex structure is sandwiched between the passivation layer and the eaves structure, and the second convex
  • the starting structure is sandwiched between the passivation layer and the beam structure.
  • the first convex structure is located below the eaves structure, and the second convex structure is located below the beam structure.
  • the acoustic resonator further includes a passivation layer 110 covering the surface of the top electrode 101.
  • the first raised structure 108 is located in the eaves structure 106, and the top electrode 101 is sandwiched between the passivation layer 110 and the first raised structure 108.
  • the second raised structure 109 is located in the beam structure 107, and the top electrode 101 is sandwiched between the passivation layer 110 and the second raised structure 109.
  • the first convex structure 108 and the second convex structure 109 further enhance the ability of the suspended structure to limit the sound wave, so the sound wave mode of the piston perpendicular to the surface of the piezoelectric layer 102 can be further improved, which can further effectively improve the quality. Value.
  • a fourth embodiment of the present invention relates to a filter including a plurality of acoustic resonators including an annular convex beam eave structure in the first, second, or third embodiment.
  • a plurality of the acoustic resonators are cascaded to form the filter.
  • a fifth embodiment of the present invention relates to an electronic device including a plurality of acoustic resonators including an annular convex beam eave structure in the first, second, or third embodiment.
  • a plurality of said acoustic resonators are cascaded to form a filter.
  • the electronic device includes at least one filter in the fourth embodiment.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

一种包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备，涉及通信领域，该谐振器包括位置关系依次相连的顶电极（101）、压电层（102）、底电极（103）、声反射结构（104）以及基底（105）；顶电极（101）的边缘具有檐部结构（106）且檐部结构（106）位于声学谐振器的有效区域内，檐部结构（106）与压电层（102）之间具有空气隙（111）；顶电极（101）的边缘还具有梁部结构（107）且梁部结构（107）的其中一部分位于声学谐振器的有效区域内，梁部结构（107）与压电层（102）之间具有空气隙（111）；檐部结构（106）对应的位置具有第一凸起结构（108），梁部结构（107）对应的位置具有第二凸起结构（109），能够有效的提高声学谐振器的品质因数或并联阻抗。

Description

包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备 技术领域
本发明涉及通信领域，特别地涉及一种包括环形凸起梁檐结构的声学谐振器。
背景技术
由于体声波滤波器具有低插入损耗、高矩形系数、高功率容量等优点，因此，体声波滤波器被广泛应用在当代无线通讯系统中，并且体声波滤波器是决定射频信号进出通讯系统质量的重要元器件。体声波谐振器级联形成体声波滤波器，每一级体声波滤波器均包含串联谐振器和并联谐振器。体声波滤波器的性能由构成它的体声波谐振器决定。如：体声波谐振器的谐振频率决定了滤波器的工作频率，体声波谐振器的有效机电耦合系数决定了滤波器的带宽，体声波谐振器的品质因数决定滤波器的插入损耗等。当滤波器结构一定时，其品质因数，特别是在串联谐振频率和并联谐振频率处的品质因数(或串并联阻抗)，会显著影响通带插入损耗。体声波谐振器串联谐振频率处的品质因数(Qs)或并联阻抗(Rs)通常由电极损耗及材料损耗决定，而体声波谐振器并联谐振频率处的品质因数(Qp)或并联阻抗(Rp)通常受边界声波泄露影响。因此，当谐振器材料、及层叠结构确定时，Qs(或Rs)的提升空间有限，谐振器的品质因数难以提高。
发明内容
有鉴于此，本发明提供一种包括环形凸起梁檐结构的声学谐振器，能够有效的提高声学谐振器的品质因数或并联阻抗。
为解决上述技术问题，本发明的实施例提供了一种包括环形凸起梁檐结构的声学谐振器，该声学谐振器包括位置关系依次相连的顶电极、压电层、底电极、声反射结构以及基底。所述顶电极的边缘具有 檐部结构且所述檐部结构位于所述声学谐振器的有效区域内，所述檐部结构与所述压电层之间具有空气隙。所述顶电极的边缘还具有梁部结构且所述梁部结构的其中一部分位于所述声学谐振器的有效区域内，所述梁部结构与所述压电层之间具有空气隙。所述檐部结构对应的位置具有第一凸起结构，所述梁部结构对应的位置具有第二凸起结构。
本发明的实施例还提供了一种滤波器，包括上述包括环形凸起梁檐结构的声学谐振器。
本发明的实施例还提供了一种电子设备，包括上述滤波器或上述包括环形凸起梁檐结构的声学谐振器。
本发明通过在所述顶电极的边缘具有檐部结构，且所述檐部结构位于所述声学谐振器的有效区域内，所述檐部结构与所述压电层之间具有空气隙，而空气隙中的声阻抗与声学谐振器有效区域中的声阻抗不匹配，能够进一步将声学谐振器中横向模式的声反射回该声学谐振器内，并有一部分声波能量转成与声学谐振器垂直模式的波，从而使得声学谐振器的品质因数值或并联阻抗提高。另外，所述顶电极的边缘还具有梁部结构且所述梁部结构位于所述声学谐振器的有效区域内，所述梁部结构与所述压电层之间具有空气隙。由于梁部结构下空气隙中的声阻抗与声学谐振器有效区域中的声阻抗不匹配，能够进一步将声学谐振器中横向模式的声反射回谐振器内，并有一部分声波能量转成与声学谐振器垂直模式的波，从而使得声学谐振器的品质因数值或并联阻抗进一步提高。再者，由于所述檐部结构对应的位置具有第一凸起结构，所述梁部结构对应的位置具有第二凸起结构，而第一凸起结构和第二凸起结构进一步增强了悬空结构对声波的限制能力，所以能够使与压电层表面垂直的活塞声波模式得到进一步提高，从而能够进一步有效地提高品质因数值。
可选的，所述声学谐振器还包括位于所述顶电极之上的钝化层；所述第一凸起结构夹持在所述钝化层和所述檐部结构之间，所述第二凸起结构夹持在所述钝化层和所述梁部结构之间。
可选的，所述檐部结构突出于所述顶电极的长度为第一预设值，所述梁部结构对应于所述声学谐振器的有效区域内的长度为第二预设 值。
可选的，所述第一预设值和所述第二预设值的范围在0.5um至7um。
可选的，所述第一凸起结构至少为两个，所述第二凸起结构至少为两个；所述第一预设值为两个所述第一凸起结构中心距的整数倍，且所述第一凸起结构的长度大于相邻两个所述第一凸起结构之间的距离；所述第二预设值为两个所述第二凸起结构中心距的整数倍，且所述第二凸起结构的长度大于相邻两个所述第二凸起结构之间的距离。
可选的，所述声学谐振器还包括覆盖于所述顶电极表面的钝化层；所述第一凸起结构位于所述钝化层之上且对应于所述檐部结构，所述第二凸起结构位于所述钝化层之上且对应于所述梁部结构。
可选的，所述第一凸起结构的长度小于或等于所述檐部结构突出于所述顶电极的长度，所述第二凸起结构的长度小于或等于所述梁部结构对应于所述声学谐振器的有效区域内的长度。
可选的，所述第一凸起结构的长度小于或等于所述檐部结构突出于所述顶电极长度的三分之一，且所述第一凸结构起位于所述檐部结构的边缘。
可选的，所述第二凸起结构的长度小于或等于所述梁部结构在所述声学谐振器的有效区域内的长度的三分之一，且所述第二凸起结构位于所述有效区域内的所述梁部结构边缘。
可选的，所述声学谐振器还包括覆盖于所述顶电极表面的钝化层；所述第一凸起结构位于所述檐部结构，且所述顶电极夹持在所述钝化层和所述第一凸起结构之间；所述第二凸起结构位于所述梁部结构，且所述顶电极夹持在所述钝化层和所述第二凸起结构之间。
可选的，所述声反射结构位于所述基底的上表面或嵌于所述基底的内部。
可选的，所述声反射结构嵌于所述基底的内部，且所述底电极沉积在所述声反射结构的上表面并覆盖所述声反射结构。
可选的，所述底电极的边缘刻蚀成斜面，且所述斜面位于所述声反射结构的外边；其中，所述斜面的横切面为阶梯状或垂直状。
可选的，所述顶电极和所述底电极的材料均为以下任意一种：锇、 镁、金、钨、钼、铂、钌、铱、锗、铜、钛、钛钨、铝、铬、砷掺杂金。可选的，所述第一凸起结构和所述第二凸起结构的材料为介质或金属。
可选的，所述压电层的材料为以下任意一种：氮化铝、氧化锌、锆钛酸铅、铌酸锂、石英、铌酸钾、钽酸锂。可选的，所述压电层的材料为掺杂稀土元素的氮化铝。
可选的，所述稀土元素为以下任意一种或其任意组合：钪、钇、镁、钛、镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱、镥可选的，所述第一凸起结构和所述第二凸起结构的材料为介质或金属。
可选的，所述第二凸起结构的投影位于所述声学谐振器的有效区域的边缘。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1是第一实施方式中一种包括环形凸起梁檐结构的声学谐振器的结构示意图；
图2是第一实施方式中一种包括环形凸起梁檐结构的声学谐振器的剖视图；
图3是第二实施方式中一种包括环形凸起梁檐结构的声学谐振器的剖视图；
图4是第二实施方式中一种包括环形凸起梁檐结构的声学谐振器的另一剖视图；
图5是第一凸起结构的长度与声学谐振器有效机电耦合系数的大小关系坐标图；
图6是第一凸起结构的长度与声学谐振器串联电阻的大小关系坐标图；
图7是第一凸起结构的长度与声学谐振器并联电阻的大小关系坐标图；
图8是第二实施方式中一种包括环形凸起梁檐结构的声学谐振器 的另一剖视图；
图9是第三实施方式中一种包括环形凸起梁檐结构的声学谐振器的剖视图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合附图对本发明的各实施例进行详细的阐述。然而，本领域的普通技术人员可以理解，在本发明各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。
本发明的第一实施例涉及一种包括环形凸起梁檐结构的声学谐振器。如图1和图2所示，该声学谐振器包括位置关系依次相连的顶电极101、压电层102、底电极103、声反射结构104以及基底105。其中，所述声反射结构104可以但不限于为声学镜。所述声反射结构104位于所述基底105的上表面或嵌于所述基底105的内部。优选的，本实施例中所述声反射结构104为嵌入基底105中的空腔所构成，但是任何其它的声学镜结构如布拉格反射器也同样适用。具体的，所述声反射结构104嵌于所述基底105的内部，且所述底电极103沉积在所述声反射结构104的上表面并覆盖所述声反射结构104。另外，可以将所述底电极103的边缘刻蚀成斜面，且所述斜面位于所述声反射结构104的外边。其中，所述斜面的横切面可以但不限于为阶梯状或垂直状等，斜面的横切面也可以为其它相似的结构。
值得一提的是，所述顶电极101和所述底电极103的材料均为以下任意一种：金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)、锇(Os)、镁(Mg)、金(Au)、钨(W)、钼(Mo)、铂(Pt)、钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、铝(Al)、铬(Cr)、砷掺杂金等类似金属形成。所述压电层102的材料为以下任意一种：氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO3)、石英(Quartz)、铌酸钾(KNbO3)或钽酸锂(LiTaO3)等 材料。且所述材料为压电薄膜，厚度小于10微米。氮化铝薄膜为多晶形态或者单晶形态，生长方式为薄膜溅射(sputtering)或者有机金属化学气相沉积法(MOCVD)。可选的，所述压电层102的材料为掺杂稀土元素的氮化铝。其中，所述稀土元素为以下任意一种或其任意组合：钪(Sc)、钇(Y)、镁(Mg)、钛(Ti)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)等。
所述顶电极101的边缘具有檐部结构106，且所述檐部结构106位于所述声学谐振器的有效区域内，所述檐部结构106与所述压电层102之间具有空气隙111，而空气隙111中的声阻抗与声学谐振器有效区域中的声阻抗不匹配，能够进一步将声学谐振器中横向模式的声反射回该声学谐振器内，并有一部分声波能量转成与声学谐振器垂直模式的波，从而使得声学谐振器的品质因数值或并联阻抗提高。
另外，所述顶电极101的边缘还具有梁部结构107且所述梁部结构107的其中一部分位于所述声学谐振器的有效区域内，所述梁部结构107与所述压电层102之间具有空气隙111。由于梁部结构107下空气隙111中的声阻抗与声学谐振器有效区域中的声阻抗不匹配，能够进一步将声学谐振器中横向模式的声反射回谐振器内，并有一部分声波能量转成与声学谐振器垂直模式的波，从而使得声学谐振器的品质因数值或并联阻抗进一步提高。值得一提的是，檐部结构和梁部结构统称为梁檐结构。
再者，由于所述檐部结构106对应的位置具有第一凸起结构108，所述梁部结构107对应的位置具有第二凸起结构109，而第一凸起结构108和第二凸起结构109进一步增强了悬空结构对声波的限制能力，所以能够使与压电层102表面垂直的活塞声波模式得到进一步提高，从而能够进一步有效地提高品质因数值。优选的，所述第一凸起结构108和所述第二凸起结构109的材料为介质或金属。具体的，所述声学谐振器还包括位于所述顶电极101之上的钝化层110。所述第一凸起结构108夹持在所述钝化层110和所述檐部结构106之间，所述第二凸起结构109夹持在所述钝化层110和所述梁部结构107之间。常用的顶电 极101是钼，这个材料非常容易氧化，会影响声学谐振器的性能，所以在顶电极101上面在沉积一层钝化层110，能够用于保护顶电极101，常用的钝化层110是氮化铝。
值得一提的是，所述檐部结构106突出于所述顶电极101的长度为第一预设值d1，所述梁部结构107对应于所述声学谐振器的有效区域内的长度为第二预设值d2。多个所述声学谐振器级联形成滤波器，所述滤波器的每一级均包括一个串联谐振器和一个并联谐振器。优选的，所述第一预设值d1和所述第二预设值d2的范围为0.5um(微米)到7um。
本发明的第二实施例涉及一种包括环形凸起梁檐结构的声学谐振器，在第一实施例中，第一凸起结构夹持在钝化层和檐部结构之间，第二凸起结构夹持在钝化层和梁部结构之间。而在本实施例中，第一凸起结构和第二凸起结构均位于钝化层之上。
如图3所示，所述声学谐振器还包括覆盖于所述顶电极101表面的钝化层110。常用的顶电极101是钼，这个材料非常容易氧化，会影响声学谐振器的性能，所以在顶电极101上面在沉积一层钝化层110，能够用于保护顶电极101，常用的钝化层110是氮化铝。所述第一凸起结构108位于所述钝化层110之上且对应于所述檐部结构106。所述第二凸起结构109位于所述钝化层110之上且对应于所述梁部结构107。
值得一提的是，所述檐部结构106突出于所述顶电极101的长度为第一预设值d1，所述梁部结构107对应于所述声学谐振器的有效区域内的长度为第二预设值d2。优选的，如图4所示，所述第一凸起结构108的长度d3小于或等于d1。所述第二凸起结构109的长度d4小于或等于d2。在实际的设计过程中，为了使声学谐振器具有更好的效果，可以将所述第一凸起结构108的长度设计成小于或等于所述檐部结构106突出于所述顶电极101长度的三分之一。以图示方向为例，第一凸起结构108在垂直于底电极103的投射位置位于檐部结构106在垂直于底电极103的投射位置以内。优选的，所述第二凸起结构的投影位于所述声学谐振器的有效区域内，还能够节省第二凸起结构空 间，节约成本。并且所述第一凸起结构108位于所述檐部结构106的边缘。
第二凸起结构109在垂直于底电极103的投射位置位于所述声学谐振器的有效区域的边缘。对于面积为15k(这里的k表示1000平方微米，下同)的声学谐振器来说，当d1为3um时，控制d3的长度分别为1um、2um、3um。实验结果显示：当d3为1um时，声学谐振器的有效机电耦合系数
Figure PCTCN2018124084-appb-000001
最大，为8.35％，如图5所示。此时串联电阻Rs最小，为0.456Ω，如图6所示。并且此时并联电阻Rp最大，为3400Ω，如图7所示。
另外，本实施例可以根据实际设计的需求将第一凸起结构108和第二凸起结构109的个数设计为多个。具体的，所述第一凸起结构108至少为两个，所述第二凸起结构109至少为两个。
图8以第一凸起结构108为两个，第二凸起结构109为两个为例进行说明，并非将第一凸起结构108和第二凸起结构109的个数限制为两个。
所述第一预设值为两个所述第一凸起结构108中心距的整数倍，且所述第一凸起结构108的长度大于相邻两个所述第一凸起结构108之间的距离。具体地说，假如两个相邻的第一凸起结构108的距离为d5，那么d1＝n1*(d3+d5)。其中n1为正整数，d3>＝d5。所述第二预设值为两个所述第二凸起结构109中心距的整数倍，且所述第二凸起结构109的长度大于相邻两个所述第二凸起结构109之间的距离。具体地说，假如两个相邻的第二凸起结构109的距离为d6，那么d2＝n2*(d4+d6)，其中n2为正整数，d4>＝d6。
第一凸起结构108和第二凸起结构109进一步增强了悬空结构对声波的限制能力，所以能够使与压电层102表面垂直的活塞声波模式得到进一步提高，从而能够进一步有效地提高品质因数值。
本发明的第三实施例涉及一种包括环形凸起梁檐结构的声学谐振器，在第一实施例中，第一凸起结构夹持在钝化层和檐部结构之间，第二凸起结构夹持在钝化层和梁部结构之间。而在本实施例中，第一 凸起结构位于檐部结构的下方，第二凸起结构位于梁部结构的下方。
具体的，如图9所示，所述声学谐振器还包括覆盖于所述顶电极101表面的钝化层110。所述第一凸起结构108位于所述檐部结构106，且所述顶电极101夹持在所述钝化层110和所述第一凸起结构108之间。所述第二凸起结构109位于所述梁部结构107，且所述顶电极101夹持在所述钝化层110和所述第二凸起结构109之间。第一凸起结构108和第二凸起结构109进一步增强了悬空结构对声波的限制能力，所以能够使与压电层102表面垂直的活塞声波模式得到进一步提高，从而能够进一步有效地提高品质因数值。
本发明的第四实施例涉及一种滤波器，所述滤波器包括多个第一、第二或第三实施方式中包括环形凸起梁檐结构的声学谐振器。多个所述声学谐振器级联形成所述滤波器。
本发明的第五实施例涉及一种电子设备，所述电子设备包括多个第一、第二或第三实施方式中包括环形凸起梁檐结构的声学谐振器。多个所述声学谐振器级联形成滤波器。或者，所述电子设备包括至少一个第四实施例中的滤波器。
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，取决于设计要求和其他因素，可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。

Claims (20)

  1. 一种包括环形凸起梁檐结构的声学谐振器，其特征在于，包括位置关系依次相连的顶电极、压电层、底电极、声反射结构以及基底；
    所述顶电极的边缘具有檐部结构且所述檐部结构位于所述声学谐振器的有效区域内，所述檐部结构与所述压电层之间具有空气隙；
    所述顶电极的边缘还具有梁部结构且所述梁部结构的其中一部分位于所述声学谐振器的有效区域内，所述梁部结构与所述压电层之间具有空气隙；
    所述檐部结构对应的位置具有第一凸起结构，所述梁部结构对应的位置具有第二凸起结构。
  2. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述声学谐振器还包括位于所述顶电极之上的钝化层；
    所述第一凸起结构夹持在所述钝化层和所述檐部结构之间，所述第二凸起结构夹持在所述钝化层和所述梁部结构之间。
  3. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述檐部结构突出于所述顶电极的长度为第一预设值，所述梁部结构对应于所述声学谐振器的有效区域内的长度为第二预设值。
  4. 根据权利要求3所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述第一预设值和所述第二预设值的范围在0.5um至7um。
  5. 根据权利要求3所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述第一凸起结构至少为两个，所述第二凸起结构至少为两个；
    所述第一预设值为两个所述第一凸起结构中心距的整数倍，且所述第一凸起结构的长度不小于相邻两个所述第一凸起结构之间的距离；
    所述第二预设值为两个所述第二凸起结构中心距的整数倍，且所述第二凸起结构的长度不小于相邻两个所述第二凸起结构之间的距离。
  6. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述声学谐振器还包括覆盖于所述顶电极表面的钝化层；
    所述第一凸起结构位于所述钝化层之上且对应于所述檐部结构，所述第二凸起结构位于所述钝化层之上且对应于所述梁部结构。
  7. 根据权利要求6所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述第一凸起结构的长度小于或等于所述檐部结构突出于所述顶电极的长度，所述第二凸起结构的长度小于或等于所述梁部结构对应于所述声学谐振器的有效区域内的长度。
  8. 根据权利要求7所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述第一凸起结构的长度小于或等于所述檐部结构突出于所述顶电极长度的三分之一，且所述第一凸起结构位于所述檐部结构的边缘。
  9. 根据权利要求7所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述第二凸起结构的长度小于或等于所述梁部结构在所述声学谐振器的有效区域内的长度的三分之一，且所述第二凸起结构位于所述有效区域内的所述梁部结构边缘。
  10. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述声学谐振器还包括覆盖于所述顶电极表面的钝化层；
    所述第一凸起结构位于所述檐部结构下表面，且所述顶电极夹持在所述钝化层和所述第一凸起结构之间；
    所述第二凸起结构位于所述梁部结构下表面，且所述顶电极夹持在所述钝化层和所述第二凸起结构之间。
  11. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述声反射结构位于所述基底的上表面或嵌于所述基底的内部。
  12. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述声反射结构嵌于所述基底的内部，且所述底电极沉积在所述声反射结构的上表面并覆盖所述声反射结构。
  13. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述底电极的边缘刻蚀成斜面，且所述斜面位于所述声反射结构的外边；其中，所述斜面的横切面为阶梯状或垂直状。
  14. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述第二凸起结构的投影位于所述声学谐振器的有效区域的边缘。
  15. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述顶电极和所述底电极的材料均为以下任意一种：
    锇、镁、金、钨、钼、铂、钌、铱、锗、铜、钛、钛钨、铝、铬、砷掺杂金。
  16. 根据权利要求1所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述压电层的材料为以下任意一种：
    氮化铝、氧化锌、锆钛酸铅、铌酸锂、石英、铌酸钾、钽酸锂、掺杂有稀土元素的氮化铝。
  17. 根据权利要求16所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述稀土元素为以下任意一种或其任意组合：
    钪、钇、镁、钛、镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱、镥。
  18. 根据权利要求1至17中任意一项所述的一种包括环形凸起梁檐结构的声学谐振器，其特征在于，所述第一凸起结构和所述第二凸起结构的材料为介质或金属。
  19. 一种滤波器，包括根据权利要求1-18中任一项所述的包括环形凸起梁檐结构的声学谐振器。
  20. 一种电子设备，包括根据权利要求19所述的滤波器或者根据权利要求1-18中任一项所述的包括环形凸起梁檐结构的声学谐振器。
PCT/CN2018/124084 2018-12-26 2018-12-26 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备 Ceased WO2020133003A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/124084 WO2020133003A1 (zh) 2018-12-26 2018-12-26 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/124084 WO2020133003A1 (zh) 2018-12-26 2018-12-26 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备

Publications (1)

Publication Number Publication Date
WO2020133003A1 true WO2020133003A1 (zh) 2020-07-02

Family

ID=71127420

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/124084 Ceased WO2020133003A1 (zh) 2018-12-26 2018-12-26 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备

Country Status (1)

Country Link
WO (1) WO2020133003A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101908865A (zh) * 2010-08-20 2010-12-08 庞慰 体波谐振器及其加工方法
CN103401528A (zh) * 2011-12-27 2013-11-20 安华高科技通用Ip(新加坡)公司 包含桥接器的固态安装块体声波共振器结构
US8981876B2 (en) * 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US20160126930A1 (en) * 2011-02-28 2016-05-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a ring
CN107733396A (zh) * 2016-08-12 2018-02-23 三星电机株式会社 体声波谐振器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8981876B2 (en) * 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
CN101908865A (zh) * 2010-08-20 2010-12-08 庞慰 体波谐振器及其加工方法
US20160126930A1 (en) * 2011-02-28 2016-05-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a ring
CN103401528A (zh) * 2011-12-27 2013-11-20 安华高科技通用Ip(新加坡)公司 包含桥接器的固态安装块体声波共振器结构
CN107733396A (zh) * 2016-08-12 2018-02-23 三星电机株式会社 体声波谐振器

Similar Documents

Publication Publication Date Title
CN110061712B (zh) 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备
CN109802646B (zh) 带有温度补偿层的谐振器、滤波器
CN111313857B (zh) 设置有插入结构与温补层的体声波谐振器、滤波器和电子设备
CN111010119B (zh) 带复合环形结构的谐振器、滤波器及电子设备
WO2021042741A1 (zh) 压电层具有插入结构的体声波谐振器、滤波器和电子设备
CN111193489B (zh) 体声波谐振器、滤波器和电子设备
CN111245400B (zh) 具有桥部插入结构的体声波谐振器、滤波器和电子设备
CN111193484A (zh) 带粗糙面体声波谐振器、滤波器和电子设备
CN111355466B (zh) 具有多梁檐空隙的体声波谐振器、滤波器和电子设备
WO2020140654A1 (zh) 基于梁檐尺寸调整声学谐振器性能的装置和方法
CN111564550B (zh) 半导体器件及其制造方法、具有半导体器件的电子设备
CN111355463A (zh) 基于空腔尺寸调整有效机电耦合系数的装置
WO2020134803A1 (zh) 电极厚度不对称的体声波谐振器、滤波器和电子设备
WO2022083352A1 (zh) 体声波谐振器及组件、滤波器、电子设备
CN111371425B (zh) 顶电极连接部设有延伸结构的谐振器、滤波器和电子设备
CN111355464A (zh) 基于环形凸起调整有效机电耦合系数的装置
CN114553178B (zh) 具有钨电极的体声波谐振器、滤波器及电子设备
WO2022135252A1 (zh) 带温补层的体声波谐振器、滤波器及电子设备
CN111355470A (zh) 基于悬檐尺寸调整有效机电耦合系数的装置
WO2023030359A1 (zh) 包括间隙电极的体声波谐振器、滤波器及电子设备
WO2020133003A1 (zh) 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备
EP4401309A1 (en) Bulk acoustic wave resonance device, filter device, and radio frequency front-end device
WO2022083712A1 (zh) 体声波谐振器及组件、滤波器、电子设备
CN117081533B (zh) 一种体声波谐振器及其制备方法、滤波器和电子设备
WO2022228452A1 (zh) 体声波谐振器、滤波器及电子设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18944655

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18944655

Country of ref document: EP

Kind code of ref document: A1