WO2020125346A1 - 两端口具有移相网络模块的滤波器，具有其的双工器和电子设备 - Google Patents

两端口具有移相网络模块的滤波器，具有其的双工器和电子设备 Download PDF

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Publication number
WO2020125346A1
WO2020125346A1 PCT/CN2019/121015 CN2019121015W WO2020125346A1 WO 2020125346 A1 WO2020125346 A1 WO 2020125346A1 CN 2019121015 W CN2019121015 W CN 2019121015W WO 2020125346 A1 WO2020125346 A1 WO 2020125346A1
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Prior art keywords
filter
phase
network module
port
band pass
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PCT/CN2019/121015
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English (en)
French (fr)
Inventor
庞慰
徐利军
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/66—Phase shifters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703—Networks using bulk acoustic wave devices
    • H03H9/706—Duplexers

Definitions

  • Embodiments of the present invention relate to the semiconductor field, and in particular, to a filter, a duplexer having the filter, and an electronic device having the filter or duplexer.
  • the wireless communication system is developing in the direction of multi-function, multi-band and multi-protocol. If it is necessary to combine the functions of different communication frequency bands such as GSM, CDMA, WCDMA, GPS, and WIFI in wireless communication on one product. This poses a higher challenge to the radio frequency front end in wireless communication equipment. In particular, as the size of the whole machine becomes smaller and smaller, the frequency channel resources become more crowded, and the intervals between different communication bands are getting closer. To ensure that the systems work normally without interfering with each other, this requires that the filters can provide excellent filtering performance. To achieve low loss and high isolation of the transceiver signal.
  • thin-film bulk acoustic wave filters utilize the piezoelectric effect of piezoelectric crystals to generate resonance. Since resonance is generated by mechanical waves, rather than electromagnetic waves as the source of resonance, the wavelength of mechanical waves is much shorter than the wavelength of electromagnetic waves. Therefore, the thin film bulk acoustic wave filter and the resonator composed thereof are mentioned to be greatly reduced in size compared with the conventional electromagnetic filter. On the other hand, since the crystal orientation growth of the piezoelectric crystal can be well controlled at present, the loss of the resonator is extremely small and the quality factor is high, which can cope with the complex design requirements such as steep transition band and low insertion loss. Because the bulk acoustic wave filter has the characteristics of small size, high roll-off, and low insertion loss, the filter with this core has been widely used in communication systems.
  • the piezoelectric coupling coefficient of the piezoelectric material that the bulk acoustic wave resonator relies on is generally not high, such as aluminum nitride (AlN) is only 0.063, resulting in the bulk acoustic wave filter can only be suitable for narrow-band filters, in order to meet the RF front end
  • AlN aluminum nitride
  • related researchers have developed broadband filters with parallel large inductance on parallel resonators. Although they can change the parallel resonance frequency of parallel resonators to achieve the purpose of widening the bandwidth, but A large inductance is connected in parallel to the parallel resonator. Although the bandwidth is widened, the out-of-band suppression is deteriorated. This scheme can only be used when the out-of-band suppression is not high.
  • An embodiment of the present invention provides a filter, including: a filter section including a first filter unit covering a low frequency band and a second filter unit covering a high frequency band; a first port and a second port, a filter unit Connected between the first port and the second port; the first phase shift network module is connected between the second filter unit and the first port; and the second phase shift network module is connected between the second filter unit and the first Between the two ports.
  • the first phase-shifting network module is the same as the second phase-shifting network module.
  • At least one phase-shifting network module includes: a capacitive device connected between the corresponding port and the second filter unit; and a first inductor and a second inductor, wherein: the first ends of the two inductors are respectively connected to At both ends of the capacitive device, the second ends of the two inductors are grounded. Further, a mutual inductance is formed between the first inductor and the second inductor.
  • At least one phase-shifting network module includes: a capacitive device connected between the corresponding port and the second filter unit; and a first transmission line device and a second transmission line device, the first ends of the two transmission line devices are respectively connected To both ends of the capacitive device, the second ends of the two transmission line devices are grounded.
  • At least one phase shifting network module includes: a capacitive device connected between the corresponding port and the second filter unit; a transmission line device, the first end of the transmission line device is connected to one end of the capacitive device, the transmission line device The second end of is connected to ground; and the inductor, the first end of the inductor is connected to the other end of the capacitive device, and the second end of the inductor is grounded.
  • the filter is a thin film bulk acoustic wave filter.
  • a duplexer unit which includes: a package carrier board; a high-frequency band-pass filter unit and a low-frequency band-pass filter unit, and the two filter units are respectively set at high The band-pass filter chip and the low-band pass filter chip, the high-band pass filter chip and the low-band pass filter chip are packaged on the package carrier board, and are suitable for being commonly connected to two common ports, wherein: high The band-pass filter unit is the above-mentioned second filter unit; and the first port and the second port are respectively connected to the two common ports.
  • each phase-shifting network module is provided on a corresponding phase-shifting network module chip; and the phase-shifting network module chip, the high-band pass filter chip, and the low-band pass filter chip are integrated in On the package carrier board, the corresponding chips are connected by bonding wires.
  • At least one phase-shifting network module is disposed in the package carrier board; or at least one phase-shifting network module is disposed in the high-band pass filter chip.
  • a duplexer including the above duplexer unit.
  • an electronic device including the above filter or the above duplexer unit.
  • FIG. 1 is a schematic diagram of a combined broadband filter (duplexer) in the prior art
  • FIG. 2 is a schematic diagram of a combined broadband filter (duplexer) according to an exemplary embodiment of the present invention
  • FIG. 3 is a topology diagram of a combined broadband filter (duplexer) according to an exemplary embodiment of the present invention
  • Figure 4 is the impedance curve of the second branch of the duplexer on the Smith chart, where the solid line is the impedance curve of the second branch when no phase shifting network module is set, and the dashed line is the shift set as shown in Figure 3 Phase network module when the impedance curve of the second branch;
  • FIG. 5 exemplarily shows the amplitude-frequency response curve of the duplexer according to FIG. 3, where the abscissa is the frequency and the ordinate is the insertion loss, where the solid line is the insertion loss in the presence of two phase-shifting network modules, and the dashed line Insertion loss when two phase-shifted network modules are not present;
  • FIG. 6 is a partially enlarged schematic diagram of FIG. 5;
  • FIG. 7 exemplarily shows the return loss of the filter
  • FIG. 8 is a schematic diagram of a bonding wire package corresponding to the duplexer of FIG. 3;
  • FIG. 9 is a schematic diagram of a modified embodiment of a phase-shifting network module according to the present invention.
  • the present invention proposes an implementation of a high-suppression combined broadband filter.
  • the high-suppression combined broadband filter is shown in FIG. 2.
  • the high-rejection combined broadband filter is mainly composed of two filter branches, the first filter branch is mainly composed of a low-band pass filter 10 covering a low frequency band, unlike in FIG. 1, the second filter branch It includes a high-band pass filter 20 covering the high frequency band and phase-shift network modules 21 and 22 connected to both ends of the high-band pass filter 20.
  • the phase-shift network modules 21 and 22 are used to change the high-band pass filter 20 Impedance characteristics of the high-frequency band filter 10 and the high-band pass filter 20, the insertion loss of the middle part of the broadband filter is improved, and the input ports of the first filter branch and the second filter branch are connected in parallel At the common port 30, the output ports of the first filter branch and the second filter branch are connected to the common port 31 in parallel.
  • the low-band pass filter and the high-band pass filter may be implemented by bulk acoustic wave resonators.
  • FIG. 3 is a topology diagram of a combined broadband filter (duplexer) according to an exemplary embodiment of the present invention.
  • the combined broadband filter is mainly composed of two bulk acoustic wave filter branches.
  • the first filter branch is a filter 101 that can cover low frequencies
  • its circuit topology is a 4-3 trapezoidal structure, which is mainly composed of 4 series resonators, 3 parallel resonators, and 3 inductors .
  • the series resonator includes S11, S12, S13, S14
  • the parallel resonator includes P11, P12, P13
  • the inductance is L11, L12, L13.
  • the series resonators S11, S12, S13, and S14 are connected in series in sequence to form a series branch.
  • the parallel resonators P11, P12, P13 and the inductors L11, L12, L13 are connected in series first, and then connected in parallel to the corresponding nodes of the series branch.
  • a parallel branch consisting of parallel resonator P11 and inductor L11, one end is connected between series resonators S11 and S12, and the other end is grounded;
  • the parallel branch composed of the parallel resonator P13 and the inductor L13 is connected between the series resonators S13 and S14, and the other end is also grounded.
  • the parallel resonators P11, P12, and P13 of the filter 101 need to be loaded with a mass load to make the parallel resonance frequency close to the series resonance frequency of the series resonators S11, S12, S13, and S14, thereby forming a bandpass filter covering low frequencies
  • the inductance L11, L12, L13 plays a role in controlling the transmission zero point of the filter, which in turn affects the out-of-band suppression.
  • the second filter branch route can be composed of a high-frequency filter 201, a phase-shifting network module 211, and a phase-shifting network module 221.
  • the phase-shifting network modules 211 and 221 are connected in series to both ends of the filter 201, respectively .
  • the filter 201 whose circuit topology is a 4-3 trapezoidal structure, is mainly composed of 4 series resonators, 3 parallel resonators, and 3 inductors.
  • the series resonator includes S21, S22, S23, S24
  • the parallel resonator includes P21, P22, P23
  • the inductance is L21, L22, L23.
  • the series resonators S21, S22, S23, and S24 are connected in series in series to form a series branch.
  • the parallel resonators P21, P22, and P23 are connected in series with the inductors L21, L22, and L23, respectively, and then connected in parallel to the corresponding nodes of the series branch.
  • the parallel resonators P21, P22, P23 of the filter 201 need to be loaded with a mass load to make the parallel resonance frequency close to the series resonance frequency of the series resonators S21, S22, S23, S24, thereby forming a bandpass filter covering high frequencies
  • the inductance L21, L22, L23 plays the role of controlling the transmission zero of the filter, which in turn affects the out-of-band suppression.
  • the phase-shift network module 211 is composed of a capacitor C1 and two inductors L31 and L32 connected in parallel to the capacitor.
  • there is a mutual inductance M1 between the inductors L31 and L32 (the mutual inductance M1 is exemplarily shown in FIG. 8
  • the forming method may be a cross-coupling method as shown in FIG. 8 or a method of being arranged adjacent to each other in the up-down direction, etc.).
  • the phase shifting network module 221 is composed of a capacitor C2 and two inductors L33 and L34 connected in parallel to the capacitor.
  • there is a mutual inductance M2 between the inductors L33 and L34 (the mutual inductance M2 is exemplarily shown in FIG. 8
  • the forming method may be a cross-coupling method as shown in FIG. 8 or a method of being arranged adjacent to each other in the up-down direction, etc.).
  • the phase shift network module 211 and the phase shift network module 221 mainly adjust the impedance curve of the filter 201 adjacent to the filter 101 frequency band, thereby improving the in-band insertion loss.
  • the solid line is the impedance curve of the second filter branch without the phase shift network module (represented on the Smith chart), where the AB segment is the frequency covered by the second filter branch Range, the BC section is the frequency band covered by the first filter branch, and after adding the phase-shifting network module, the impedance curve of the entire second filter branch becomes the dotted line in FIG. 4, where the A1B1 section is the second filter branch The frequency range covered by the circuit, the B1C1 section is the frequency band covered by the first filter branch. After passing through the phase shift network module, the B1C1 section is closer to the open end, thereby reducing the impact on the first filter branch, thereby improving the band Interpolation loss (see, for example, Figures 5-6 and related descriptions).
  • the input ports of the first filter branch and the second filter branch are connected to the common port 1 to form the input port of the combined filter, the first filter branch and the second filter
  • the output port of the branch is connected to the common port 2 to form the output port of the combined filter;
  • the input port of the combined filter is connected with an inductor L41 in parallel, and the output port of the combined filter is connected with an inductor L42 in parallel.
  • the inventor has designed a band-pass filter that can cover the frequency band of 2.49-2.71 GHz.
  • This filter has a large relative bandwidth, and the relative bandwidth can reach 8.1%.
  • the first filter branch covers 2.49-2.59 GHz, and the second filter branch covers 2.59-2.71 GHz.
  • Figure 5 is a graph of insertion loss.
  • the adjacent band (2.2-2.47GHz and 2.75-2.36GHz) suppression is greater than 45dB, while the band covering 1.5-2.2GHz suppression is greater than 34dB, the entire filter has a higher out-of-band suppression.
  • Figure 6 is a partially enlarged view of the filter characteristics covering the 2.49-2.71GHz frequency band.
  • the solid line is the insertion loss when two phase-shifted network modules are present, and the dashed line is the insertion loss when the two phase-shifted network modules are not present. It can be seen that due to the presence of two phase-shifting network modules, the insertion loss of the center band 2.56-2.61GHz of the filter is within 1.8dB, while when the phase-shifting network module does not exist, the insertion loss of the center band 2.56-2.61GHz It deteriorates to 3.3dB, whereby the presence of two phase-shifting network modules improves the filter's in-band insertion loss.
  • Fig. 7 is the corresponding return loss diagram of the above scheme. As shown in the figure, the return loss of the two ports of the filter is below 20dB.
  • FIG. 8 is a schematic diagram of a bonding wire package corresponding to the duplexer of FIG. 3.
  • 8 is a bonding wire package, in which the bulk acoustic wave resonators of the filter 101 are integrated on the chip 02, the inductances of the filter 101 are integrated on the PCB 01 (corresponding to the package carrier), and the bodies of the filter 201
  • the acoustic resonator is integrated on the chip 03, the inductance of the filter 201 is integrated on the PCB 01, and the phase-shifting network module 211 is realized by an integrated passive device IPD (integrated passive devices) process, and is integrated on the chip 04, phase-shifting
  • the network module 221 is implemented with an integrated passive device IPD (integrated passive devices) process, and is integrated on the chip 05.
  • the IPD process has the characteristics of high integration, small size, high Q value, etc., and can be well integrated with bulk acoustic wave resonators.
  • Chips 02, 03, 04, 05
  • phase-shifting network modules can be directly arranged in the chip 3.
  • the phase-shifting network module may also be directly arranged in the package carrier board.
  • the phase-shifting network module is composed of a capacitor and two grounding inductors connected in parallel at both ends thereof. As shown in FIG. 8, the two grounding inductors also form a mutual inductance.
  • the phase shift network module is not limited to this.
  • two parallel inductors may not form mutual inductance.
  • FIG. 9 also shows an alternative form of the phase shift network module.
  • a phase shift network module includes: a capacitor C1 connected between the corresponding port and the filter section; a transmission line device TL32, the first end of the transmission line device TL32 is connected to one end of the capacitor C1, the transmission line device The second end of TR32 is grounded; and the inductor L31, the first end of the inductor L31 is connected to the other end of the capacitor C1, and the second end of the inductor L31 is grounded.
  • the right diagram in FIG. 9 shows that the inductance L31 in the phase shifting network module in FIG. 3 is replaced with the transmission line device TL31.
  • the phase shift network module includes: a capacitor connected between the corresponding port and the filter section; and a first transmission line device and a second transmission line device, the first ends of the two transmission line devices are respectively Connected to both ends of the capacitor, the second ends of the two transmission line devices are both grounded.
  • the inductance in the phase-shifting network module may be an equivalent inductance device, and the capacitance may be an equivalent capacitive device.
  • the filter of the present invention is not limited to the film bulk acoustic wave filter.
  • an embodiment of the present invention also proposes a filter, including:
  • the filter unit has a first filter unit (for example, may correspond to the large rectangular dashed frame in the upper part of FIG. 3), and a second filter unit (for example, may correspond to the large rectangular dashed frame in the lower part of FIG. 3) Show);
  • a first port (which may correspond to, for example, port 1 in FIG. 3) and a second port (which may correspond to, for example, port 2 in FIG. 3), and the filter section is connected between the first port and the second port;
  • a first phase-shifting network module (for example, corresponding to the small rectangular dashed frame on the left in FIG. 3) connected between the second filter unit and the first port;
  • the second phase-shifting network module (for example, corresponding to the small rectangular frame on the right side in FIG. 3) is connected between the second filter unit and the second port.
  • the present invention proposes a duplexer unit including: a package carrier board (for example, corresponding to PCB01 in FIG. 8); and a high-band pass filter unit and a low-band pass filter unit, two filters
  • the units are respectively provided in a high-band pass filter chip (see chip 03 in FIG. 8 for example) and a low-band pass filter chip (see chip 02 in FIG. 8 for example), a high-band pass filter chip and a low-band pass filter
  • the filter chip is packaged on the package carrier board, and is suitable for being connected to two common ports in common, wherein the high-band pass filter is the above-mentioned second filter unit.
  • the invention also relates to a duplexer having the above duplexer unit.
  • Embodiments of the present invention also relate to an electronic device, including the above-mentioned filter or duplexer.
  • the electronic devices here include but are not limited to intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, drones, and smart watches.

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Abstract

本发明涉及一种滤波器，包括：滤波器部；第一端口和第二端口，滤波器部连接在第一端口与第二端口之间，包括覆盖低频段的第一滤波器单元和覆盖高频段的第二滤波器单元；第一移相网络模块，连接在第二滤波器单元与第一端口之间；和第二移相网络模块，连接在第二滤波器单元与第二端口之间。至少一个移相网络模块包括：连接在对应端口与第二滤波器单元之间的容性器件；和第一电感与第二电感，其中：两个电感的第一端分别连接到所述容性器件的两端，两个电感的第二端均接地，第一电感与第二电感之间形成互感。

Description

两端口具有移相网络模块的滤波器，具有其的双工器和电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种滤波器，一种具有该滤波器的双工器，以及一种具有该滤波器或双工器的电子设备。
背景技术
随着社会的发展,人们对通信、卫星定位、导航、移动互联网应用等需求日益旺盛，对于无线通讯中的频带资源分配日愈紧张。对于无线通讯频带的划分呈现出密集性、高频率和陡峭带宽的特点。
为满足需求，无线通讯系统朝着多功能、多频段、多协议的方向发展。如需要当前将无线通讯中的GSM、CDMA、WCDMA、GPS、WIFI等不同通信频段功能组合在一台产品上。这对无线通讯设备中的射频前端提出了更高的挑战。特别是由于整机尺寸日渐小型化，频率信道资源日愈拥挤，不同通信频带间隔愈发接近，为保证各系统正常工作而又不互相干扰，这要求其中的滤波器能够提供优良的滤波性能，实现对收发信号的低损耗和高隔离。
在各种类型的滤波器中，薄膜体声波滤波器利用压电晶体的压电效应产生谐振。由于谐振由机械波产生，而非电磁波作为谐振来源，机械波的波长比电磁波波长短很多。因此，薄膜体声波滤波器及其组成的谐振器提及相对传统的电磁滤波器尺寸大幅度减小。另一方面，由于压电晶体的晶向生长目前能够良好控制，谐振器的损耗极小，品质因数高，能够应对陡峭过渡带和低插入损耗等复杂设计要求。由于体声波滤波器具有的尺寸小、高滚降、低插损等特性，以此为核心的滤波器在通讯系统中得到了广泛的应用。
然而，由于体声波谐振器所依赖的压电材料的压电耦合系数一般都不高，如氮化铝(AlN)才为0.063，导致体声波滤波器只能适合窄带滤波器，为满足射频前端宽带滤波器的需要，近年来，相关研究人员例如以在并联谐振器上并联大电感的方案开发出宽带滤波器，其虽然可改变并联谐振器的并联谐振频率从而达到拓宽带宽的目的，但是在并联谐振器上并联一个大电感，虽然拓宽了带宽，但是恶化了带外抑制，该方 案只能用在带外抑制不高的情况下。
目前既能实现体声波谐振器宽带要求，还能实现带外高抑制的技术还没有出现。
发明内容
为缓解或解决使用现有技术中的上述问题的至少一个方面，提出本发明。
本发明的实施例提出了一种滤波器，包括：滤波器部，包括覆盖低频段的第一滤波器单元和覆盖高频段的第二滤波器单元；第一端口和第二端口，滤波器部连接在第一端口与第二端口之间；第一移相网络模块，连接在第二滤波器单元与第一端口之间；和第二移相网络模块，连接在第二滤波器单元与第二端口之间。
可选的，第一移相网络模块与第二移相网络模块相同。
可选的，至少一个移相网络模块包括：连接在对应端口与第二滤波器单元之间的容性器件；和第一电感与第二电感，其中：两个电感的第一端分别连接到所述容性器件的两端，两个电感的第二端均接地。进一步的，第一电感与第二电感之间形成互感。
可选的，至少一个移相网络模块包括：连接在对应端口与第二滤波器单元之间的容性器件；和第一传输线器件与第二传输线器件，两个传输线器件的第一端分别连接到所述容性器件的两端，两个传输线器件的第二端均接地。
可选的，至少一个移相网络模块包括：连接在对应端口与第二滤波器单元之间的容性器件；传输线器件，传输线器件的第一端连接到所述容性器件的一端，传输线器件的第二端接地；和电感，电感的第一端连接到所述容性器件的另一端，电感的第二端接地。
可选的，所述滤波器为薄膜体声波滤波器。
根据本发明的实施例的另一方面，提出了一种双工器单元，包括：封装载板；高频带通滤波器单元和低频带通滤波器单元，两个滤波器单元分别设置于高频带通滤波器芯片和低频带通滤波器芯片，高频带通滤波器芯片和低频带通滤波器芯片封装于所述封装载板，且适于共同连接于两个公共端口，其中：高频带通滤波器单元为上述的第二滤波器单元；且所述第一端口和所述第二端口分别连接到所述两个公共端口。
可选的，每个移相网络模块设置于对应的移相网络模块芯片；且所述移相网络模块芯片、所述高频带通滤波器芯片和所述低频带通滤波器芯片均集成于所述封装载板上，相应的芯片之间采用键合线连接。
可选的，至少一个移相网络模块设置于所述封装载板中；或者至少一个移相网络 模块设置于高频带通滤波器芯片。
根据本发明的实施例的再一方面，提出了一种双工器，包括上述的双工器单元。
根据本发明的实施例的还一方面，提出了一种电子设备，包括上述的滤波器，或者包括上述的双工器单元。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为现有技术中的组合式宽带滤波器(双工器)的原理图；
图2为根据本发明的一个示例性实施例的组合式宽带滤波器(双工器)的原理图；
图3为根据本发明的一个示例性实施例的组合式宽带滤波器(双工器)的拓扑结构图；
图4为双工器的第二支路在Smith圆图上的阻抗曲线，其中实线为没有设置移相网络模块时第二支路的阻抗曲线，而虚线为如图3所示设置了移相网络模块时第二支路的阻抗曲线；
图5示例性示出了根据图3的双工器的幅频响应曲线，其中横坐标是频率，纵坐标为插入损耗，其中实线为两个移相网络模块存在时的插入损耗，而虚线为两个移相网络模块不存在时的插入损耗；
图6为图5中的局部放大示意图；
图7示例性示出了滤波器的回波损失；
图8为对应于图3的双工器的键合线封装形式的示意图；
图9为根据本发明的移相网络模块的变形实施例的示意图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
本发明提出了高抑制组合式宽带滤波器的实现方式，高抑制组合式宽带滤波器如图2所示。该高抑制组合式宽带滤波器主要由两个滤波器支路组成，第一滤波器支路主要由覆盖低频段的低频带通滤波器10构成，与图1中不同，第二滤波器支路包括覆盖高频段的高频带通滤波器20以及和高频带通滤波器20两端相连的移相网络模块21、22，移相网络模块21、22用于改变高频带通滤波器20的阻抗特性，进而改善由低频带通滤波器10和高频带通滤波器20组成的宽带滤波器中间部分的插损，第一滤波器支路和第二滤波器支路的输入端口并接于公共端口30，第一滤波器支路和第二滤波器支路的输出端口并接于公共端口31。低频带通滤波器和高频带通滤波器可由体声波谐振器来实现。
图3为根据本发明的一个示例性实施例的组合式宽带滤波器(双工器)的拓扑结构图。
如图3所示，该组合式宽带滤波器主要由两个体声波滤波器支路组成。
如图3所示，第一滤波器支路为可以覆盖低频的滤波器101，其电路拓扑结构为4-3梯形结构，主要由4个串联谐振器、3个并联谐振器、3个电感组成。其中串联谐振器包括S11、S12、S13、S14，并联谐振器包括P11、P12、P13，电感为L11、L12、L13。串联谐振器S11、S12、S13、S14依次串联连接，形成串联支路。并联谐振器P11、P12、P13分别和电感L11、L12、L13先串联连接，然后并联到串联支路相应的节点上。由并联谐振器P11和电感L11组成的并联支路，一端接于串联谐振器S11和S12之间，另一端接地；由并联谐振器P12和电感L12组成的并联支路，一端接于串联谐振器S12和S13之间，另一端也接地；由并联谐振器P13和电感L13组成的并联支路，一端接于串联谐振器S13和S14之间，另一端也接地。滤波器101的并联谐振器P11、P12、P13需要加载质量负载，使其并联谐振频率和串联谐振器S11、S12、S13、S14的串联谐振频率接近，由此形成一个覆盖低频的带通滤波器，而电感L11、L12、L13起到控制该滤波器传输零点的作用，进而影响带外抑制。
如图3所示，第二滤波器支路由可以覆盖高频的滤波器201、移相网络模块211、移相网络模块221组成，移相网络模块211、221分别串联到滤波器201的两端。
滤波器201，其电路拓扑结构为4-3梯形结构，主要由4个串联谐振器、3个并联谐振器、3个电感组成。其中串联谐振器包括S21、S22、S23、S24，并联谐振器包括P21、P22、P23，电感为L21、L22、L23。串联谐振器S21、S22、S23、S24依次串联连接，形成串联支路，并联谐振器P21、P22、P23分别和电感L21、L22、L23先串 联连接，然后并联到串联支路相应的节点上。由并联谐振器P21和电感L21组成的并联支路，一端接于串联谐振器S21和S22之间，另一端接地；由并联谐振器P22和电感L22组成的并联支路，一端接于串联谐振器S22和S23之间，另一端也接地；由并联谐振器P23和电感L23组成的并联支路，一端接于串联谐振器S23和S24之间，另一端也接地。滤波器201的并联谐振器P21、P22、P23需要加载质量负载，使其并联谐振频率和串联谐振器S21、S22、S23、S24的串联谐振频率接近，由此形成一个覆盖高频的带通滤波器，而电感L21、L22、L23起到控制该滤波器传输零点的作用，进而影响带外抑制。
移相网络模块211由电容C1和并联到该电容的2个电感L31、L32组成，在进一步的实施例中，电感L31、L32之间有互感M1(图8中示例性示出了互感M1的形成方式，可以是如图8中所示的交叉耦合方式，也可以是在上下方向上彼此邻近布置的方式等)。移相网络模块221由电容C2和并联到该电容的2个电感L33、L34组成，在进一步的实施例中，电感L33、L34之间有互感M2(图8中示例性示出了互感M2的形成方式，可以是如图8中所示的交叉耦合方式，也可以是在上下方向上彼此邻近布置的方式等)。
移相网络模块211、移相网络模块221主要对滤波器201临近滤波器101频段的阻抗曲线进行调节，从而改善带内的插损。如图4所示，实线为未加移相网络模块时第二滤波器支路的阻抗曲线(在史密斯(Smith)圆图上表示)，其中AB段为第二滤波器支路覆盖的频率范围，BC段为临近第一滤波器支路覆盖的频段，加上移相网络模块后，整个第二滤波器支路的阻抗曲线变成图4的虚线，其中A1B1段为第二滤波器支路覆盖的频率范围，B1C1段为临近第一滤波器支路覆盖的频段，通过移相网络模块后，B1C1段更加靠近开路端，进而减少对第一滤波器支路的影响，由此改善带内插损(例如参见图5-6及其相关描述)。
如图3所示，第一滤波器支路和第二滤波器支路的输入端口并接于公共端口1，形成该组合式滤波器的输入端口，第一滤波器支路和第二滤波器支路的输出端口并接于公共端口2，形成该组合式滤波器的输出端口；该组合式滤波器的输入端口并联了一个电感L41,该组合式滤波器的输出端口并联了一个电感L42。
作为本发明的基于图3的方案的一个示例性实施例，发明人设计了能覆盖2.49-2.71GHz频段的带通滤波器，此滤波器具有较大的相对带宽，相对带宽可达8.1％，第一滤波器支路覆盖2.49-2.59GHz，第二滤波器支路覆盖2.59-2.71GHz。
图5为插入损耗图，邻带(2.2-2.47GHz和2.75-2.36GHz)抑制大于45dB，而覆盖1.5-2.2GHz的频带抑制大于34dB，整个滤波器有较高的带外抑制。
图6为覆盖2.49-2.71GHz频段的滤波器特性局部放大图，实线为两个移相网络模块存在时的插损，虚线为两个移相网络模块不存在时的插损。可以看到，由于两个移相网络模块的存在，滤波器中心频带2.56-2.61GHz部分的插损在1.8dB以内，而移相网络模块不存在时，中心频带2.56-2.61GHz部分的插损恶化到3.3dB，由此两个移相网络模块的存在改善了滤波器的带内插损。
图7为上述方案相应的回波损耗图，如图所示，滤波器两个端口回波损耗均在20dB以下。
图8为对应于图3的双工器的键合线封装形式的示意图。图8为键合线封装形式，其中滤波器101的各体声波谐振器集成于芯片02上，滤波器101的各电感集成于PCB 01(对应于封装载板)上，滤波器201的各体声波谐振器集成于芯片03上，滤波器201的各电感集成于PCB 01上，而移相网络模块211用集成无源器件IPD(integrated passive devices)工艺实现，并集成于芯片04上，移相网络模块221用集成无源器件IPD(integrated passive devices)工艺实现，并集成于芯片05上。IPD工艺具有高集成度、小尺寸、高Q值等特点，可以和体声波谐振器很好集成。芯片02、03、04、05再通过键合线方式集成于PCB 01之上。
不过，虽然没有示出，在芯片3上的空间足够大的情况下(例如采用缩小尺寸的体声波谐振器实现)，可以将两个移相网络模块直接设置于该芯片3中。
此外，虽然没有示出，在封装载板例如采用LTCC基板的情况下，还可以直接将移相网络模块设置于封装载板中。
在图3的实施例中，移相网络模块均为由电容以及并联在其两端的两个接地电感构成，如图8所示，该两个接地电感还形成互感。不过，移相网络模块不限于此。例如，两个并联的电感可以不形成互感。
此外，图9中还示出了移相网络模块的可选形式。参见图9中的左侧图，一个移相网络模块包括：连接在对应端口与滤波器部之间的电容C1；传输线器件TL32，传输线器件TL32的第一端连接到电容C1的一端，传输线器件TR32的第二端接地；和电感L31，电感L31的第一端连接到电容C1的另一端，电感L31的第二端接地。图9中的右侧图为利用传输线器件TL31代替了图3中的移相网络模块中的电感L31。
虽然没有示出，在一个实施例中，移相网络模块包括：连接在对应端口与滤波器 部之间的电容；和第一传输线器件与第二传输线器件，两个传输线器件的第一端分别连接到所述电容的两端，两个传输线器件的第二端均接地。
还需要指出的是，在本发明中，移相网络模块中的电感可以为等效电感器件，电容可以为等效电容器件。
以上以双工器或者具有两个薄膜体声波滤波器支路的组合式宽带滤波器为例进行说明。需要指出的是，虽然以薄膜体声波滤波器为例进行描述，本发明的滤波器不限于薄膜体声波滤波器。
相应的，本发明的实施例也提出了一种滤波器，包括：
滤波器部，其具有第一滤波器单元(例如可以对应于图3中上部的大矩形虚线框所示)，和第二滤波器单元(例如可以对应于图3中下部大的矩形虚线框所示)；
第一端口(可以对应于例如图3中的端口1)和第二端口(可以对应于例如图3中的端口2)，滤波器部连接在第一端口与第二端口之间；
第一移相网络模块(例如对应于图3中的左侧的小矩形虚框所示)，连接在第二滤波器单元与第一端口之间；和
第二移相网络模块(例如对应于图3中的右侧的小矩形虚框所示)，连接在第二滤波器单元与第二端口之间。
基于以上，本发明提出了一种双工器单元，包括：封装载板(例如对应于图8中的PCB01)；和高频带通滤波器单元和低频带通滤波器单元，两个滤波器单元分别设置于高频带通滤波器芯片(例如参见图8中的芯片03)和低频带通滤波器芯片(例如参见图8中的芯片02)，高频带通滤波器芯片和低频带通滤波器芯片封装于所述封装载板，且适于共同连接于两个公共端口，其中：高频带通滤波器为上述的第二滤波器单元。
本发明也涉及一种具有上述双工器单元的双工器。
本发明的实施例也涉及一种电子设备，包括上述的滤波器或者双工器。需要指出的是，这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机、智能手表等终端产品。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (12)

  1. 一种滤波器，包括：
    滤波器部，包括覆盖低频段的第一滤波器单元和覆盖高频段的第二滤波器单元；
    第一端口和第二端口，滤波器部连接在第一端口与第二端口之间；
    第一移相网络模块，连接在第二滤波器单元与第一端口之间；和
    第二移相网络模块，连接在第二滤波器单元与第二端口之间。
  2. 根据权利要求1所述的滤波器，其中：
    第一移相网络模块与第二移相网络模块相同。
  3. 根据权利要求1或2所述的滤波器，其中，至少一个移相网络模块包括：
    连接在对应端口与第二滤波器单元之间的容性器件；和
    第一电感与第二电感，
    其中：两个电感的第一端分别连接到所述容性器件的两端，两个电感的第二端均接地。
  4. 根据权利要求3所述的滤波器，其中：
    第一电感与第二电感之间形成互感。
  5. 根据权利要求1或2所述的滤波器，其中，至少一个移相网络模块包括：
    连接在对应端口与第二滤波器单元之间的容性器件；和
    第一传输线器件与第二传输线器件，两个传输线器件的第一端分别连接到所述容性器件的两端，两个传输线器件的第二端均接地。
  6. 根据权利要求1或2所述的滤波器，其中，至少一个移相网络模块包括：
    连接在对应端口与第二滤波器单元之间的容性器件；
    传输线器件，传输线器件的第一端连接到所述容性器件的一端，传输线器件的第二端接地；和
    电感，电感的第一端连接到所述容性器件的另一端，电感的第二端接地。
  7. 根据权利要求1所述的滤波器，其中：
    所述滤波器为薄膜体声波滤波器。
  8. 一种双工器单元，包括：
    封装载板；和
    高频带通滤波器单元和低频带通滤波器单元，两个滤波器单元分别设置于高频带 通滤波器芯片和低频带通滤波器芯片，高频带通滤波器芯片和低频带通滤波器芯片封装于所述封装载板，且适于共同连接于两个公共端口，
    其中：
    高频带通滤波器单元为根据权利要求1-7中任一项所述的滤波器的第二滤波器单元；且
    所述第一端口和所述第二端口分别连接到所述两个公共端口。
  9. 根据权利要求8所述的双工器单元，其中：
    每个移相网络模块设置于对应的移相网络模块芯片；且
    所述移相网络模块芯片、所述高频带通滤波器芯片和所述低频带通滤波器芯片均集成于所述封装载板上，相应的芯片之间采用键合线连接。
  10. 根据权利要求8所述的双工器单元，其中：
    至少一个移相网络模块设置于所述封装载板中；或者
    至少一个移相网络模块设置于高频带通滤波器芯片。
  11. 一种双工器，包括根据权利要求8-10中任一项所述的双工器单元。
  12. 一种电子设备，包括根据权利要求1-7中任一项所述的滤波器，或者包括根据权利要求8-10中任一项所述的双工器单元。
PCT/CN2019/121015 2018-12-18 2019-11-26 两端口具有移相网络模块的滤波器，具有其的双工器和电子设备 Ceased WO2020125346A1 (zh)

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CN116325342B (zh) * 2020-09-30 2025-04-01 华为技术有限公司 多频段相控阵和电子设备
CN113411069A (zh) * 2021-06-03 2021-09-17 成都频岢微电子有限公司 一种体声波滤波器装置及提升带外抑制的方法

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CN1581678A (zh) * 2003-08-01 2005-02-16 精工爱普生株式会社 振荡电路和使用该振荡电路的无线通信装置
JP2013197772A (ja) * 2012-03-19 2013-09-30 Nippon Dempa Kogyo Co Ltd 弾性波フィルタ
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CN1581678A (zh) * 2003-08-01 2005-02-16 精工爱普生株式会社 振荡电路和使用该振荡电路的无线通信装置
JP2013197772A (ja) * 2012-03-19 2013-09-30 Nippon Dempa Kogyo Co Ltd 弾性波フィルタ
CN107306122A (zh) * 2016-04-21 2017-10-31 株式会社村田制作所 弹性波滤波器装置
CN105978522A (zh) * 2016-05-04 2016-09-28 电子科技大学 一种吸收式带通滤波器组件

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