WO2020124794A1 - Cu film manufacturing method, thin-film transistor manufacturing method, and array substrate manufacturing method - Google Patents

Cu film manufacturing method, thin-film transistor manufacturing method, and array substrate manufacturing method Download PDF

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WO2020124794A1
WO2020124794A1 PCT/CN2019/076847 CN2019076847W WO2020124794A1 WO 2020124794 A1 WO2020124794 A1 WO 2020124794A1 CN 2019076847 W CN2019076847 W CN 2019076847W WO 2020124794 A1 WO2020124794 A1 WO 2020124794A1
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film
manufacturing
temperature
preparing
etching
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PCT/CN2019/076847
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French (fr)
Chinese (zh)
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李嘉
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020124794A1 publication Critical patent/WO2020124794A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Definitions

  • the invention relates to the technical field of semiconductor materials, in particular to a preparation method of a Cu film, a thin film transistor and an array substrate.
  • Thin-film transistors due to oxidation and etching problems of Cu wires in displays transistor, TFT) yield is not high.
  • Embodiments of the present invention provide a method for preparing a Cu film, a thin film transistor, and an array substrate.
  • the Cu film etched with a metal pattern is subjected to high-temperature pretreatment, and then other processes are performed to obtain a better taper angle and avoid a round taper.
  • the cutting edge discharge improves the yield of TFT production.
  • the present application provides a method for preparing a Cu film, the method includes:
  • High-temperature pretreatment is performed on the Cu film etched with metal patterns, and the temperature of the high-temperature pretreatment is 150°C to 300°C.
  • the step of depositing and forming a Cu film on the glass substrate includes:
  • a physical vapor deposition process is used to deposit and form a Cu film on the glass substrate.
  • the thickness of the Cu film is 1000-4000 angstroms.
  • the step of etching the required metal pattern on the Cu film includes:
  • a combination of dry etching and wet etching is used to etch the desired metal pattern on the Cu film.
  • the temperature of the high-temperature pretreatment is 160°C to 270°C.
  • the temperature of the high-temperature pretreatment is 190°C.
  • the time of the high-temperature pretreatment is 2 min to 120 min.
  • the time for the high-temperature pretreatment is 3 min to 50 min.
  • the environment of the high-temperature pretreatment is a heating environment of vacuum, atmosphere, or N 2 .
  • the present application provides a method for preparing a thin film transistor, the method including the steps of preparing a gate metal layer or a source-drain metal layer using a Cu film preparation method, the Cu film preparation method including:
  • High-temperature pretreatment is performed on the Cu film etched with metal patterns, and the temperature of the high-temperature pretreatment is 150°C to 300°C.
  • the step of depositing and forming a Cu film on the glass substrate includes:
  • a physical vapor deposition process is used to deposit and form a Cu film on the glass substrate.
  • the thickness of the Cu film is 1000-4000 angstroms.
  • the step of etching the required metal pattern on the Cu film includes:
  • a combination of dry etching and wet etching is used to etch the desired metal pattern on the Cu film.
  • the temperature of the high-temperature pretreatment is 160°C to 270°C.
  • the temperature of the high-temperature pretreatment is 190°C.
  • the time of the high-temperature pretreatment is 2 min to 120 min.
  • the time for the high-temperature pretreatment is 3 min to 50 min.
  • the high-temperature pretreatment time is 5 minutes.
  • the environment of the high-temperature pretreatment is a heating environment of vacuum, atmosphere, or N 2 .
  • the present application provides a method for manufacturing an array substrate, including the step of preparing a thin film transistor using the method for manufacturing a thin film transistor described in any one of the second aspects.
  • a Cu film is deposited on a glass substrate; a photoresist pattern is formed on the Cu film; the required metal pattern is etched on the Cu film; and the Cu film on which the metal pattern is etched is subjected to high-temperature pretreatment.
  • High temperature pretreatment temperature is 150°C ⁇ 300°C.
  • the theory of Cu absorption and exotherm is obtained through experiment inference, and the Cu film for etching the metal pattern is subjected to high-temperature pretreatment, and then other processes are performed to obtain a better Taper angle and avoid tip discharge caused by a round Taper To improve the yield of TFT production.
  • FIG. 1 is a schematic flowchart of an embodiment of a method for preparing a Cu film provided by an embodiment of the present invention
  • Figure 2 is a schematic diagram of the structure of the Cu film without high temperature pretreatment
  • FIG. 3 is a schematic structural view of the Cu film after the high-temperature pretreatment in the method for preparing the Cu film provided by the embodiment of the present invention.
  • first and second are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more, unless otherwise specifically limited.
  • Thin-film transistors are one of the types of field-effect transistors, which are roughly fabricated by depositing various thin films on the substrate, such as semiconductor active layers, dielectric layers, and metal electrode layers. Thin film transistors play a very important role in the performance of display devices.
  • FIG. 1 it is a schematic diagram of an embodiment of a method for preparing a Cu film according to an embodiment of the present invention.
  • the method includes:
  • the step of depositing and forming a Cu film on the glass substrate may specifically include: depositing and forming the Cu film on the glass substrate by using a physical vapor deposition process.
  • PVD Physical Vapor Deposition
  • Physical Vapor Deposition refers to the process of transferring substances or atoms from the source to the surface of the substrate using physical processes. Its role is to make certain particles with special properties (high strength, wear resistance, heat dissipation, corrosion resistance, etc.) spray on the lower performance matrix, so that the matrix has better performance.
  • the PVD process is widely used in the manufacturing process of thin film transistors.
  • the thickness of the Cu film is 1000-4000 angstroms. In some embodiments of the present invention, as a preference, the thickness of the Cu film is 900-3800 angstroms.
  • Photoresist also known as photoresist, is a photosensitive material used in many industrial processes. Like photolithography, a patterned coating layer can be carved on the surface of the material.
  • photoresist positive photoresist
  • negative photoresist negative photoresist
  • positive photoresist is a type of photoresist, the part that hits the light will dissolve in the photoresist developer, and the part that does not hit the light will not dissolve in the photoresist Developer.
  • Negative photoresist is another type of photoresist. The part exposed to light will not dissolve in the photoresist developer, while the part not exposed to light will dissolve in the photoresist developer.
  • the photoresist image may be a photoresist pattern formed by positive photoresist or negative photoresist, which is not specifically limited.
  • Etching, Etch in English, is a very important step in the semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process. It is a main process of pattern processing related to photolithography.
  • the so-called etching is actually understood in a narrow sense as photolithography etching.
  • the photoresist is subjected to photolithography exposure processing through photolithography, and then the etching process is used to remove the parts to be removed.
  • etching has become a general term for stripping and removing materials through solutions, reactive ions or other mechanical methods, and has become a general term for micro-processing manufacturing.
  • etching The simplest and most commonly used classification of etching is: dry etching and wet etching. Obviously, the difference is that the wet method uses a solvent or solution for etching.
  • Wet etching is a pure chemical reaction process, which refers to the use of the chemical reaction between the solution and the pre-etched material to remove the part that is not masked by the masking film material to achieve the purpose of etching. Its characteristics are: Wet etching has a wide range of applications in semiconductor technology: grinding, polishing, cleaning, corrosion. There are many types of dry etching, including light evaporation, vapor phase etching, plasma etching, etc.
  • the main forms of dry etching include pure chemical processes (such as shielded, downstream, barrel), pure physical processes (such as ion milling), physical and chemical processes, commonly used reactive ion etching RIE, ion beam assisted free radical etching Etching ICP, etc.
  • the step of etching the required metal pattern on the Cu film may specifically include: using a combination of dry etching and wet etching to etch the required metal pattern on the Cu film.
  • the Cu film may be etched by wet method first, and then the Cu film is etched by dry method to etch the desired metal pattern.
  • the high-temperature pretreatment of the Cu film for etching metal patterns may be performed in an annealing device, or may be performed in other devices with a heating chamber, such as RTA, Oven, CVD Heater chamber, etc. Equipment for heating the chamber.
  • a heating chamber such as RTA, Oven, CVD Heater chamber, etc. Equipment for heating the chamber.
  • a Cu film is deposited on a glass substrate; a photoresist pattern is formed on the Cu film; the required metal pattern is etched on the Cu film; and the Cu film on which the metal pattern is etched is subjected to high-temperature pretreatment.
  • High temperature pretreatment temperature is 150°C ⁇ 300°C.
  • the theory of Cu absorption and exotherm is obtained through experiment inference, and the Cu film for etching the metal pattern is subjected to high-temperature pretreatment, and then other processes are performed to obtain a better Taper angle and avoid tip discharge caused by a round Taper To improve the yield of TFT production.
  • the temperature of the high-temperature pretreatment is 160°C to 270°C. Further, the temperature of the high-temperature pretreatment may be 190°C.
  • the time of the high-temperature pretreatment is 2 min to 120 min.
  • the high-temperature pretreatment time is 3 min to 50 min.
  • the high-temperature pretreatment time is 5 minutes.
  • the high-temperature pretreatment environment may be a vacuum, atmospheric, or N 2 heating environment.
  • the environment for high-temperature pretreatment may also be clean dry air (Clean Dry Air, CDA).
  • CVD is the abbreviation of Chemical Vapor Deposition, which refers to the gas-phase reaction at high temperature, for example, the thermal decomposition of metal halides, organic metals, hydrocarbons, etc., hydrogen reduction or the chemical reaction of its mixed gas at high temperature to A method of precipitating inorganic materials such as metals, oxides, and carbides.
  • Figure 2 is a schematic diagram of the structure of the Cu film without high temperature pretreatment.
  • the taper angle is 58.03°, which is likely to cause tip discharge.
  • the Cu film is pretreated by high temperature
  • the schematic diagram of the structure after the treatment. After measurement, the taper angle is 47.41°. Compared with the taper angle without high temperature pretreatment, the taper angle is better. It avoids the tip discharge caused by the round taper and improves the yield of TFT production.
  • a method for preparing a thin film transistor is also provided.
  • a step of preparing a gate metal layer or a source-drain metal layer is also provided.
  • the thin film transistor manufacturing method in the embodiment of the present invention may perform other processes, such as CVD forming a gate insulating layer (GI layer) to the substrate on.
  • CVD forming a gate insulating layer (GI layer) to the substrate on.
  • the embodiment of the present invention also provides a preparation method of the array substrate, including the thin film transistor
  • the preparation method is a step of preparing a thin film transistor.

Abstract

Disclosed in embodiments of the present invention are a Cu film manufacturing method, a thin-film transistor manufacturing method, and an array substrate manufacturing method. The Cu film manufacturing method comprises: depositing a Cu film on a glass substrate; forming a photoresist pattern on the Cu film; etching the Cu film to obtain a required metal pattern; and performing high temperature preprocessing on the Cu film etched with the metal pattern, the temperature of the high temperature preprocessing being 150-300°C. According to the embodiments of the present invention, point discharge caused by a round Taper is avoided, and a TFT production yield is improved.

Description

Cu膜、薄膜晶体管及阵列基板的制备方法Method for preparing Cu film, thin film transistor and array substrate 技术领域Technical field
本发明涉及半导体材料技术领域，具体涉及一种Cu膜、薄膜晶体管及阵列基板的制备方法。The invention relates to the technical field of semiconductor materials, in particular to a preparation method of a Cu film, a thin film transistor and an array substrate.
背景技术Background technique
现今科技蓬勃发展，信息商品种类推陈出新，满足了大众不同的需求。早期显示器多半为阴极射线管（Cathode Ray Tube，CRT）显示器，由于其体积庞大与耗电量大，而且所产生的辐射对于长时间使用显示器的使用者而言，有危害身体的问题。因此，现今市面上的显示器渐渐将由液晶显示器（Liquid Crystal Display，LCD）取代旧有的CRT 显示器，而随着尺寸不停的做大，电极导线的延迟成了急需解决的问题，Cu导线的开发应运而生。Technology is booming nowadays, and the types of information commodities are being updated to meet the different needs of the public. Early monitors were mostly cathode ray tube (Cathode Ray Tube, CRT) monitors. Due to their large size and large power consumption, the generated radiation poses a health hazard to users who use the monitor for long periods of time. Therefore, the displays on the market today will gradually be replaced by liquid crystal displays (Liquid Crystal Display (LCD) replaces the old CRT display, and as the size continues to increase, the delay of the electrode wire becomes an urgent problem to be solved, and the development of the Cu wire came into being.
技术问题technical problem
显示器中Cu导线因氧化及刻蚀问题，导致薄膜晶体管（Thin-film transistor，TFT）良率不高。Thin-film transistors (Thin-film) due to oxidation and etching problems of Cu wires in displays transistor, TFT) yield is not high.
技术解决方案Technical solution
本发明实施例提供一种Cu膜、薄膜晶体管及阵列基板的制备方法，对刻蚀金属图形的Cu膜进行高温预处理，然后进行其他制程，可以得到较好Taper角，避免因圆形Taper导致的尖端放电，提高TFT生产良率。Embodiments of the present invention provide a method for preparing a Cu film, a thin film transistor, and an array substrate. The Cu film etched with a metal pattern is subjected to high-temperature pretreatment, and then other processes are performed to obtain a better taper angle and avoid a round taper. The cutting edge discharge improves the yield of TFT production.
为解决上述问题，第一方面，本申请提供一种Cu膜的制备方法，所述方法包括：To solve the above problem, in a first aspect, the present application provides a method for preparing a Cu film, the method includes:
在玻璃基板上沉积形成Cu膜；Deposit and form a Cu film on the glass substrate;
在所述Cu膜之上形成光阻图形；Forming a photoresist pattern on the Cu film;
对所述Cu膜刻蚀出所需要的金属图形；Etching the required metal pattern on the Cu film;
对刻蚀金属图形的Cu膜进行高温预处理，所述高温预处理的温度为150℃~300℃。High-temperature pretreatment is performed on the Cu film etched with metal patterns, and the temperature of the high-temperature pretreatment is 150°C to 300°C.
进一步的，所述在玻璃基板上沉积形成Cu膜的步骤，包括：Further, the step of depositing and forming a Cu film on the glass substrate includes:
采用物理气相沉积工艺在玻璃基板上沉积形成Cu膜。A physical vapor deposition process is used to deposit and form a Cu film on the glass substrate.
进一步的，所述Cu膜厚度为1000~4000埃。Further, the thickness of the Cu film is 1000-4000 angstroms.
进一步的，所述对所述Cu膜刻蚀出所需要的金属图形的步骤包括：Further, the step of etching the required metal pattern on the Cu film includes:
利用干法刻蚀和湿法刻蚀结合对所述Cu膜刻蚀出所需要的金属图形。A combination of dry etching and wet etching is used to etch the desired metal pattern on the Cu film.
进一步的，所述高温预处理的温度为160℃~270℃。Further, the temperature of the high-temperature pretreatment is 160°C to 270°C.
进一步的，所述高温预处理的温度为190℃。Further, the temperature of the high-temperature pretreatment is 190°C.
进一步的，所述高温预处理的时间为2min~120min。Further, the time of the high-temperature pretreatment is 2 min to 120 min.
进一步的，所述高温预处理的时间为3min~50min。Further, the time for the high-temperature pretreatment is 3 min to 50 min.
进一步的，所述高温预处理的环境为真空、大气或N 2的加热环境。 Further, the environment of the high-temperature pretreatment is a heating environment of vacuum, atmosphere, or N 2 .
第二方面，本申请提供一种薄膜晶体管的制备方法，所述方法包括利用Cu膜的制备方法制备栅极金属层或源漏极金属层的步骤，所述Cu膜的制备方法包括：In a second aspect, the present application provides a method for preparing a thin film transistor, the method including the steps of preparing a gate metal layer or a source-drain metal layer using a Cu film preparation method, the Cu film preparation method including:
在玻璃基板上沉积形成Cu膜；Deposit and form a Cu film on the glass substrate;
在所述Cu膜之上形成光阻图形；Forming a photoresist pattern on the Cu film;
对所述Cu膜刻蚀出所需要的金属图形；Etching the required metal pattern on the Cu film;
对刻蚀金属图形的Cu膜进行高温预处理，所述高温预处理的温度为150℃~300℃。High-temperature pretreatment is performed on the Cu film etched with metal patterns, and the temperature of the high-temperature pretreatment is 150°C to 300°C.
进一步的，所述在玻璃基板上沉积形成Cu膜的步骤，包括：Further, the step of depositing and forming a Cu film on the glass substrate includes:
采用物理气相沉积工艺在玻璃基板上沉积形成Cu膜。A physical vapor deposition process is used to deposit and form a Cu film on the glass substrate.
进一步的，所述Cu膜厚度为1000~4000埃。Further, the thickness of the Cu film is 1000-4000 angstroms.
进一步的，所述对所述Cu膜刻蚀出所需要的金属图形的步骤包括：Further, the step of etching the required metal pattern on the Cu film includes:
利用干法刻蚀和湿法刻蚀结合对所述Cu膜刻蚀出所需要的金属图形。A combination of dry etching and wet etching is used to etch the desired metal pattern on the Cu film.
进一步的，所述高温预处理的温度为160℃~270℃。Further, the temperature of the high-temperature pretreatment is 160°C to 270°C.
进一步的，所述高温预处理的温度为190℃。Further, the temperature of the high-temperature pretreatment is 190°C.
进一步的，所述高温预处理的时间为2min~120min。Further, the time of the high-temperature pretreatment is 2 min to 120 min.
进一步的，所述高温预处理的时间为3min~50min。Further, the time for the high-temperature pretreatment is 3 min to 50 min.
进一步的，所述高温预处理的时间为5min。Further, the high-temperature pretreatment time is 5 minutes.
进一步的，所述高温预处理的环境为真空、大气或N 2的加热环境。 Further, the environment of the high-temperature pretreatment is a heating environment of vacuum, atmosphere, or N 2 .
第三方面，本申请提供一种阵列基板的制备方法，包括采用第二方面中任一所述的薄膜晶体管的制备方法制备薄膜晶体管的步骤。In a third aspect, the present application provides a method for manufacturing an array substrate, including the step of preparing a thin film transistor using the method for manufacturing a thin film transistor described in any one of the second aspects.
有益效果Beneficial effect
本发明实施例方法通过在玻璃基板上沉积形成Cu膜；在Cu膜之上形成光阻图形；对Cu膜刻蚀出所需要的金属图形；对刻蚀金属图形的Cu膜进行高温预处理，该高温预处理的温度为150℃~300℃。本发明实施例中利用试验推论得出Cu吸放热理论，对刻蚀金属图形的Cu膜进行高温预处理，然后进行其他制程，可以得到较好Taper角，避免因圆形Taper导致的尖端放电，提高TFT生产良率。In the method of the embodiment of the present invention, a Cu film is deposited on a glass substrate; a photoresist pattern is formed on the Cu film; the required metal pattern is etched on the Cu film; and the Cu film on which the metal pattern is etched is subjected to high-temperature pretreatment. High temperature pretreatment temperature is 150℃~300℃. In the embodiments of the present invention, the theory of Cu absorption and exotherm is obtained through experiment inference, and the Cu film for etching the metal pattern is subjected to high-temperature pretreatment, and then other processes are performed to obtain a better Taper angle and avoid tip discharge caused by a round Taper To improve the yield of TFT production.
附图说明BRIEF DESCRIPTION
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly explain the technical solutions in the embodiments of the present invention, the drawings required in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, without paying any creative work, other drawings can also be obtained based on these drawings.
图1是本发明实施例提供一种Cu膜的制备方法的一个实施例流程示意图；1 is a schematic flowchart of an embodiment of a method for preparing a Cu film provided by an embodiment of the present invention;
图2是Cu膜不经过高温预处理的结构示意图；Figure 2 is a schematic diagram of the structure of the Cu film without high temperature pretreatment;
图3是本发明实施例提供的Cu膜的制备方法中Cu膜经过高温预处理后的结构示意图。FIG. 3 is a schematic structural view of the Cu film after the high-temperature pretreatment in the method for preparing the Cu film provided by the embodiment of the present invention.
本发明的实施方式Embodiments of the invention
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present invention.
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " The orientation or positional relationship indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation shown in the drawings Or the positional relationship is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as limiting the present invention. In addition, the terms "first" and "second" are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise specifically limited.
近年来，随着半导体设备的高速化、配线图案的微细化，高于Al导电性且电子迁移耐性等也良好的Cu作为配线、镀Cu的晶种层、接触插头的材料备受瞩目。作为该Cu的成膜方法，大多使用以溅射法为代表的物理蒸镀 (Physical Vapor Deposition，PVD)法，但伴随半导体设备的微细化，阶跃式覆盖率(Step coverage) 差这一缺点变得明显。因此，作为Cu膜的成膜方法，一直使用着通过含有Cu的原料气体的热分解反应和该原料气体利用还原性气体的还原反应在基板上形成Cu膜的化学气相沉积生长(Chemical Vapor Deposition，CVD)法。In recent years, with the increase in the speed of semiconductor devices and the miniaturization of wiring patterns, Cu, which is superior in conductivity to Al and has good electron migration resistance, has attracted attention as a material for wiring, Cu-plated seed layers, and contact plugs . As this Cu film-forming method, a physical vapor deposition (PVD) method represented by a sputtering method is often used. However, with the miniaturization of semiconductor devices, step coverage (Step The disadvantage of poor coverage becomes obvious. Therefore, as a method of forming a Cu film, chemical vapor deposition growth (Chemical Vapor Deposition, Cu) of a Cu film formed on a substrate by a thermal decomposition reaction of a raw material gas containing Cu and a reduction reaction of the raw material gas using a reducing gas has been used. CVD) method.
薄膜晶体管（Thin-film transistor，TFT）是场效应晶体管的种类之一，大略的制作方式是在基板上沉积各种不同的薄膜，如半导体主动层、介电层和金属电极层。薄膜晶体管对显示器件的工作性能具有十分重要的作用。Thin-film transistors (TFTs) are one of the types of field-effect transistors, which are roughly fabricated by depositing various thin films on the substrate, such as semiconductor active layers, dielectric layers, and metal electrode layers. Thin film transistors play a very important role in the performance of display devices.
现今市面上的显示器渐渐将由液晶显示器（Liquid Crystal Display，LCD）取代旧有的CRT 显示器，而随着尺寸不停的做大，电极导线的延迟成了急需解决的问题，Cu导线的开发应运而生（例如在TFT的制备过程中，可以通过制备Cu膜形成TFT的栅极和源漏极），但Cu导线因氧化及刻蚀问题，导致薄膜晶体管TFT生产良率不高。Today's monitors on the market will gradually replace the old CRT monitors by Liquid Crystal Display (LCD), and as the size continues to increase, the delay of electrode leads becomes an urgent problem to be solved, and the development of Cu leads (For example, during the preparation of TFTs, the gate and source and drain of the TFT can be formed by preparing a Cu film), but due to oxidation and etching problems of the Cu wire, the yield of thin film transistor TFT production is not high.
如图1所示，为本发明实施例中Cu膜的制备方法的一个实施例示意图，该方法包括：As shown in FIG. 1, it is a schematic diagram of an embodiment of a method for preparing a Cu film according to an embodiment of the present invention. The method includes:
S101、在玻璃基板上沉积形成Cu膜。S101. Deposit and form a Cu film on the glass substrate.
具体的，本发明实施例中，所述在玻璃基板上沉积形成Cu膜的步骤，具体可以包括：采用物理气相沉积工艺在玻璃基板上沉积形成Cu膜。Specifically, in the embodiment of the present invention, the step of depositing and forming a Cu film on the glass substrate may specifically include: depositing and forming the Cu film on the glass substrate by using a physical vapor deposition process.
物理气相沉积(Physical Vapor Deposition，PVD)指利用物理过程实现物质转移，将原子或分子由源转移到基材表面上的过程。它的作用是可以使某些有特殊性能（强度高、耐磨性、散热性、耐腐性等）的微粒喷涂在性能较低的母体上，使得母体具有更好的性能。PVD工艺在薄膜晶体管制备过程中广泛采用。Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the process of transferring substances or atoms from the source to the surface of the substrate using physical processes. Its role is to make certain particles with special properties (high strength, wear resistance, heat dissipation, corrosion resistance, etc.) spray on the lower performance matrix, so that the matrix has better performance. The PVD process is widely used in the manufacturing process of thin film transistors.
进一步的，本发明实施例中，Cu膜厚度为1000~4000埃。在本发明一些实施例中，作为优选，Cu膜厚度为900~3800埃。Further, in the embodiment of the present invention, the thickness of the Cu film is 1000-4000 angstroms. In some embodiments of the present invention, as a preference, the thickness of the Cu film is 900-3800 angstroms.
S102、在所述Cu膜之上形成光阻图形。S102. Form a photoresist pattern on the Cu film.
光阻，亦称为光阻剂，是一个用在许多工业制程上的光敏材料。像是光刻技术，可以在材料表面刻上一个图案的被覆层。光阻有两种，正向光阻(positive photoresist)和负向光阻(negative photoresist)，正向光阻是光阻的一种，其照到光的部分会溶于光阻显影液，而没有照到光的部分不会溶于光阻显影液。负向光阻是光阻的另一种，其照到光的部分不会溶于光阻显影液，而没有照到光的部分会溶于光阻显影液。本发明实施例中，光阻图像可以是正向光阻或负向光阻形成的光阻图形，具体不作限定。Photoresist, also known as photoresist, is a photosensitive material used in many industrial processes. Like photolithography, a patterned coating layer can be carved on the surface of the material. There are two types of photoresist, positive photoresist (positive photoresist) and negative photoresist (negative photoresist), positive photoresist is a type of photoresist, the part that hits the light will dissolve in the photoresist developer, and the part that does not hit the light will not dissolve in the photoresist Developer. Negative photoresist is another type of photoresist. The part exposed to light will not dissolve in the photoresist developer, while the part not exposed to light will dissolve in the photoresist developer. In the embodiment of the present invention, the photoresist image may be a photoresist pattern formed by positive photoresist or negative photoresist, which is not specifically limited.
S103、对所述Cu膜刻蚀出所需要的金属图形。S103: Etching the required metal pattern on the Cu film.
刻蚀，英文为Etch，它是半导体制造工艺，微电子IC制造工艺以及微纳制造工艺中的一种相当重要的步骤。是与光刻相联系的图形化（pattern）处理的一种主要工艺。所谓刻蚀，实际上狭义理解就是光刻腐蚀，先通过光刻将光刻胶进行光刻曝光处理，然后通过其它方式实现腐蚀处理掉所需除去的部分。随着微制造工艺的发展，广义上来讲，刻蚀成了通过溶液、反应离子或其它机械方式来剥离、去除材料的一种统称，成为微加工制造的一种普适叫法。Etching, Etch in English, is a very important step in the semiconductor manufacturing process, microelectronic IC manufacturing process and micro-nano manufacturing process. It is a main process of pattern processing related to photolithography. The so-called etching is actually understood in a narrow sense as photolithography etching. First, the photoresist is subjected to photolithography exposure processing through photolithography, and then the etching process is used to remove the parts to be removed. With the development of micro-manufacturing technology, in a broad sense, etching has become a general term for stripping and removing materials through solutions, reactive ions or other mechanical methods, and has become a general term for micro-processing manufacturing.
刻蚀最简单最常用分类是：干法刻蚀和湿法刻蚀。显而易见，它们的区别就在于湿法使用溶剂或溶液来进行刻蚀。湿法刻蚀是一个纯粹的化学反应过程，是指利用溶液与预刻蚀材料之间的化学反应来去除未被掩蔽膜材料掩蔽的部分而达到刻蚀目的。其特点是：湿法刻蚀在半导体工艺中有着广泛应用：磨片、抛光、清洗、腐蚀。干法刻蚀种类很多，包括光挥发、气相腐蚀、等离子体腐蚀等。其优点是：各向异性好，选择比高，可控性、灵活性、重复性好，细线条操作安全，易实现自动化，无化学废液，处理过程未引入污染，洁净度高。缺点是：成本高，设备复杂。干法刻蚀主要形式有纯化学过程（如屏蔽式，下游式，桶式），纯物理过程（如离子铣），物理化学过程，常用的有反应离子刻蚀RIE，离子束辅助自由基刻蚀ICP等。干法刻蚀方式同样有很多，一般有：溅射与离子束铣蚀，等离子刻蚀（Plasma Etching），高压等离子刻蚀，高密度等离子体（HDP）刻蚀，反应离子刻蚀（RIE）。另外，化学机械抛光CMP，剥离技术等等也可看成是广义刻蚀的一些技术。The simplest and most commonly used classification of etching is: dry etching and wet etching. Obviously, the difference is that the wet method uses a solvent or solution for etching. Wet etching is a pure chemical reaction process, which refers to the use of the chemical reaction between the solution and the pre-etched material to remove the part that is not masked by the masking film material to achieve the purpose of etching. Its characteristics are: Wet etching has a wide range of applications in semiconductor technology: grinding, polishing, cleaning, corrosion. There are many types of dry etching, including light evaporation, vapor phase etching, plasma etching, etc. Its advantages are: good anisotropy, high selection ratio, good controllability, flexibility, repeatability, safe operation with thin lines, easy to realize automation, no chemical waste liquid, no pollution introduced in the treatment process, and high cleanliness. The disadvantages are: high cost and complicated equipment. The main forms of dry etching include pure chemical processes (such as shielded, downstream, barrel), pure physical processes (such as ion milling), physical and chemical processes, commonly used reactive ion etching RIE, ion beam assisted free radical etching Etching ICP, etc. There are also many dry etching methods, generally: sputtering and ion beam milling, plasma etching (Plasma Etching), high pressure plasma etching, high density plasma (HDP) etching, reactive ion etching (RIE). In addition, chemical mechanical polishing CMP, stripping technology, etc. can also be regarded as some of the broad etching techniques.
本发明实施例中，对所述Cu膜刻蚀出所需要的金属图形的步骤具体可以包括：利用干法刻蚀和湿法刻蚀结合对所述Cu膜刻蚀出所需要的金属图形。具体的，例如，即可以先利用湿法刻蚀Cu膜，然后利用干法刻蚀Cu膜，以刻蚀出所需要的金属图形。In the embodiment of the present invention, the step of etching the required metal pattern on the Cu film may specifically include: using a combination of dry etching and wet etching to etch the required metal pattern on the Cu film. Specifically, for example, the Cu film may be etched by wet method first, and then the Cu film is etched by dry method to etch the desired metal pattern.
S104、对刻蚀金属图形的Cu膜进行高温预处理，所述高温预处理的温度为150℃~300℃。S104. Perform a high-temperature pretreatment on the Cu film etched with a metal pattern, and the temperature of the high-temperature pretreatment is 150°C to 300°C.
本发明实施例中，对刻蚀金属图形的Cu膜进行高温预处理可以是在退火设备中进行，也可以是其他具有加热腔室的设备中进行，例如RTA、Oven、CVD Heater 腔室等具备加热腔室的设备。In the embodiment of the present invention, the high-temperature pretreatment of the Cu film for etching metal patterns may be performed in an annealing device, or may be performed in other devices with a heating chamber, such as RTA, Oven, CVD Heater chamber, etc. Equipment for heating the chamber.
本发明实施例方法通过在玻璃基板上沉积形成Cu膜；在Cu膜之上形成光阻图形；对Cu膜刻蚀出所需要的金属图形；对刻蚀金属图形的Cu膜进行高温预处理，该高温预处理的温度为150℃~300℃。本发明实施例中利用试验推论得出Cu吸放热理论，对刻蚀金属图形的Cu膜进行高温预处理，然后进行其他制程，可以得到较好Taper角，避免因圆形Taper导致的尖端放电，提高TFT生产良率。In the method of the embodiment of the present invention, a Cu film is deposited on a glass substrate; a photoresist pattern is formed on the Cu film; the required metal pattern is etched on the Cu film; and the Cu film on which the metal pattern is etched is subjected to high-temperature pretreatment. High temperature pretreatment temperature is 150℃~300℃. In the embodiments of the present invention, the theory of Cu absorption and exotherm is obtained through experiment inference, and the Cu film for etching the metal pattern is subjected to high-temperature pretreatment, and then other processes are performed to obtain a better Taper angle and avoid tip discharge caused by a round Taper To improve the yield of TFT production.
本发明实施例中，经过试验推论后，经DSC(差示扫描量热仪记录)解析发现，在高温预处理设备中，在室温以每分钟10°左右进行升温，然后进行降温，在160℃出现波峰，在270℃左右再次出现波峰，然后再次进行升温发现没有再出现波谷和波峰。因此优选的，所述高温预处理的温度为160℃~270℃。进一步的，所述高温预处理的温度可以为190℃。In the embodiments of the present invention, after experimental deduction, analysis by DSC (Differential Scanning Calorimeter Recording) found that in the high-temperature pretreatment equipment, the temperature was raised at about 10° per minute at room temperature, and then the temperature was lowered at 160°C. A wave crest appeared, and the wave crest reappeared at about 270°C, and then the temperature was raised again to find that no wave trough and wave crest appeared again. Therefore, preferably, the temperature of the high-temperature pretreatment is 160°C to 270°C. Further, the temperature of the high-temperature pretreatment may be 190°C.
另外，所述高温预处理的时间为2min~120min。作为优选，高温预处理的时间为3min~50min。特别的，所述高温预处理的时间为5min。In addition, the time of the high-temperature pretreatment is 2 min to 120 min. Preferably, the high-temperature pretreatment time is 3 min to 50 min. In particular, the high-temperature pretreatment time is 5 minutes.
本发明一些实施例中，所述高温预处理的环境可以为真空、大气或N 2的加热环境。当然，在本发明其他实施例中，所述高温预处理的环境还可以为洁净干燥的压缩空气（Clean Dry Air，CDA）。 In some embodiments of the present invention, the high-temperature pretreatment environment may be a vacuum, atmospheric, or N 2 heating environment. Of course, in other embodiments of the present invention, the environment for high-temperature pretreatment may also be clean dry air (Clean Dry Air, CDA).
在对刻蚀金属图形的Cu膜进行高温预处理之后，本发明实施例中可以进行其他制程，例如CVD成膜栅极绝缘层（GI层）到基板上。其中，CVD是Chemical Vapor Deposition的简称，是指高温下的气相反应，例如，金属卤化物、有机金属、碳氢化合物等的热分解，氢还原或使它的混合气体在高温下发生化学反应以析出金属、氧化物、碳化物等无机材料的方法。After the high-temperature pretreatment is performed on the Cu film for etching the metal pattern, other processes may be performed in the embodiment of the present invention, for example, forming a gate insulating layer (GI layer) on the substrate by CVD. Among them, CVD is the abbreviation of Chemical Vapor Deposition, which refers to the gas-phase reaction at high temperature, for example, the thermal decomposition of metal halides, organic metals, hydrocarbons, etc., hydrogen reduction or the chemical reaction of its mixed gas at high temperature to A method of precipitating inorganic materials such as metals, oxides, and carbides.
如图2、图3所示，图2为Cu膜不经过高温预处理的结构示意图，经过测量，Taper角为58.03°，容易导致的尖端放电，如图3所示，为Cu膜经过高温预处理的后结构示意图，经过测量，Taper角为47.41°，相对未经高温预处理的Taper角，Taper角较好，避免因圆形Taper导致的尖端放电，提高TFT生产良率。As shown in Figure 2 and Figure 3, Figure 2 is a schematic diagram of the structure of the Cu film without high temperature pretreatment. After measurement, the taper angle is 58.03°, which is likely to cause tip discharge. As shown in Figure 3, the Cu film is pretreated by high temperature The schematic diagram of the structure after the treatment. After measurement, the taper angle is 47.41°. Compared with the taper angle without high temperature pretreatment, the taper angle is better. It avoids the tip discharge caused by the round taper and improves the yield of TFT production.
为了更好实施本发明实施例中Cu膜的制备方法，在Cu膜的制备方法的基础之上，本发明实施例中，还提供一种薄膜晶体管的制备方法，所述方法包括利用如本发明实施例中任一项所述Cu膜的制备方法制备栅极金属层或源漏极金属层的步骤。In order to better implement the preparation method of the Cu film in the embodiment of the present invention, on the basis of the preparation method of the Cu film, in the embodiment of the present invention, a method for preparing a thin film transistor is also provided. In the method for preparing a Cu film according to any one of the embodiments, a step of preparing a gate metal layer or a source-drain metal layer.
其中，在薄膜晶体管的制备方法制备栅极金属层或源漏极金属层之后，本发明实施例中薄膜晶体管的制备方法可以进行其他制程，例如CVD成膜栅极绝缘层（GI层）到基板上。After the thin film transistor manufacturing method prepares the gate metal layer or the source-drain metal layer, the thin film transistor manufacturing method in the embodiment of the present invention may perform other processes, such as CVD forming a gate insulating layer (GI layer) to the substrate on.
为了更好实施本发明实施例中Cu膜的制备方法，在薄膜晶体管的制备方法的基础之上，另外，本发明实施例中还提供一种阵列基板的制备方法，包括所述的薄膜晶体管的制备方法制备薄膜晶体管的步骤。In order to better implement the preparation method of the Cu film in the embodiment of the present invention, based on the preparation method of the thin film transistor, in addition, the embodiment of the present invention also provides a preparation method of the array substrate, including the thin film transistor The preparation method is a step of preparing a thin film transistor.
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对Cu膜的制备方法的详细描述，此处不再赘述。In the above embodiments, the description of each embodiment has its own emphasis. For a part that is not detailed in an embodiment, you can refer to the above detailed description for the preparation method of the Cu film, which is not repeated here.
以上对本发明实施例所提供的一种Cu膜、薄膜晶体管及阵列基板的制备方法进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。The preparation method of the Cu film, the thin film transistor and the array substrate provided by the embodiments of the present invention has been described in detail above, and specific examples are used to explain the principles and implementations of the present invention. It is used to help understand the method of the present invention and its core idea; at the same time, for those skilled in the art, according to the idea of the present invention, there will be changes in the specific implementation and application scope. In summary, this specification The content should not be construed as limiting the invention.

Claims (20)

  1. 一种Cu膜的制备方法，其中，所述方法包括：A method for preparing a Cu film, wherein the method includes:
    在玻璃基板上沉积形成Cu膜；Deposit and form a Cu film on the glass substrate;
    在所述Cu膜之上形成光阻图形；Forming a photoresist pattern on the Cu film;
    对所述Cu膜刻蚀出所需要的金属图形；Etching the required metal pattern on the Cu film;
    对刻蚀金属图形的Cu膜进行高温预处理，所述高温预处理的温度为150℃~300℃。High-temperature pretreatment is performed on the Cu film etched with metal patterns, and the temperature of the high-temperature pretreatment is 150°C to 300°C.
  2. 根据权利要求1所述Cu膜的制备方法，其中，所述在玻璃基板上沉积形成Cu膜的步骤，包括：The method for preparing a Cu film according to claim 1, wherein the step of depositing and forming a Cu film on the glass substrate includes:
    采用物理气相沉积工艺在玻璃基板上沉积形成Cu膜。A physical vapor deposition process is used to deposit and form a Cu film on the glass substrate.
  3. 根据权利要求2所述Cu膜的制备方法，其中，所述Cu膜厚度为1000~4000埃。The method for preparing a Cu film according to claim 2, wherein the thickness of the Cu film is 1000 to 4000 angstroms.
  4. 根据权利要求1所述Cu膜的制备方法，其中，所述对所述Cu膜刻蚀出所需要的金属图形的步骤包括：The method for preparing a Cu film according to claim 1, wherein the step of etching the required metal pattern on the Cu film includes:
    利用干法刻蚀和湿法刻蚀结合对所述Cu膜刻蚀出所需要的金属图形。A combination of dry etching and wet etching is used to etch the desired metal pattern on the Cu film.
  5. 根据权利要求1所述Cu膜的制备方法，其中，所述高温预处理的温度为160℃~270℃。The method for preparing a Cu film according to claim 1, wherein the temperature of the high-temperature pretreatment is 160°C to 270°C.
  6. 根据权利要求5所述Cu膜的制备方法，其中，所述高温预处理的温度为190℃。The method for preparing a Cu film according to claim 5, wherein the temperature of the high-temperature pretreatment is 190°C.
  7. 根据权利要求1所述Cu膜的制备方法，其中，所述高温预处理的时间为2min~120min。The method for preparing a Cu film according to claim 1, wherein the high-temperature pretreatment time is 2 min to 120 min.
  8. 根据权利要求7所述Cu膜的制备方法，其中，所述高温预处理的时间为3min~50min。The method for preparing a Cu film according to claim 7, wherein the high-temperature pretreatment time is 3 min to 50 min.
  9. 根据权利要求1所述Cu膜的制备方法，其中，所述高温预处理的环境为真空、大气或N 2的加热环境。 The method for preparing a Cu film according to claim 1, wherein the high-temperature pretreatment environment is a vacuum, atmosphere, or N 2 heating environment.
  10. 一种薄膜晶体管的制备方法，其中，所述方法包括利用Cu膜的制备方法制备栅极金属层或源漏极金属层的步骤，所述Cu膜的制备方法包括：A method for preparing a thin film transistor, wherein the method includes the steps of preparing a gate metal layer or a source-drain metal layer using a Cu film preparation method, and the Cu film preparation method includes:
    在玻璃基板上沉积形成Cu膜；Deposit and form a Cu film on the glass substrate;
    在所述Cu膜之上形成光阻图形；Forming a photoresist pattern on the Cu film;
    对所述Cu膜刻蚀出所需要的金属图形；Etching the required metal pattern on the Cu film;
    对刻蚀金属图形的Cu膜进行高温预处理，所述高温预处理的温度为150℃~300℃。High-temperature pretreatment is performed on the Cu film etched with metal patterns, and the temperature of the high-temperature pretreatment is 150°C to 300°C.
  11. 根据权利要求10所述的薄膜晶体管的制备方法，其中，所述在玻璃基板上沉积形成Cu膜的步骤，包括：The method for manufacturing a thin film transistor according to claim 10, wherein the step of depositing and forming a Cu film on the glass substrate includes:
    采用物理气相沉积工艺在玻璃基板上沉积形成Cu膜。A physical vapor deposition process is used to deposit and form a Cu film on the glass substrate.
  12. 根据权利要求11所述的薄膜晶体管的制备方法，其中，所述Cu膜厚度为1000~4000埃。The method of manufacturing a thin film transistor according to claim 11, wherein the thickness of the Cu film is 1000 to 4000 angstroms.
  13. 根据权利要求10所述的薄膜晶体管的制备方法，其中，所述对所述Cu膜刻蚀出所需要的金属图形的步骤包括：The method for manufacturing a thin film transistor according to claim 10, wherein the step of etching the required metal pattern on the Cu film includes:
    利用干法刻蚀和湿法刻蚀结合对所述Cu膜刻蚀出所需要的金属图形。A combination of dry etching and wet etching is used to etch the desired metal pattern on the Cu film.
  14. 根据权利要求10所述的薄膜晶体管的制备方法，其中，所述高温预处理的温度为160℃~270℃。The method for manufacturing a thin film transistor according to claim 10, wherein the temperature of the high-temperature pretreatment is 160°C to 270°C.
  15. 根据权利要求14所述的薄膜晶体管的制备方法，其中，所述高温预处理的温度为190℃。The method for manufacturing a thin film transistor according to claim 14, wherein the temperature of the high-temperature pretreatment is 190°C.
  16. 根据权利要求10所述的薄膜晶体管的制备方法，其中，所述高温预处理的时间为2min~120min。The method for manufacturing a thin film transistor according to claim 10, wherein the high-temperature pretreatment time is 2 min to 120 min.
  17. 根据权利要求16所述的薄膜晶体管的制备方法，其中，所述高温预处理的时间为3min~50min。The method for manufacturing a thin film transistor according to claim 16, wherein the high-temperature pretreatment time is 3 min to 50 min.
  18. 根据权利要求17所述的薄膜晶体管的制备方法，其中，所述高温预处理的时间为5min。The method for manufacturing a thin film transistor according to claim 17, wherein the high-temperature pretreatment time is 5 minutes.
  19. 根据权利要求10所述的薄膜晶体管的制备方法，其中，所述高温预处理的环境为真空、大气或N 2的加热环境。 The method for manufacturing a thin film transistor according to claim 10, wherein the high-temperature pretreatment environment is a vacuum, atmosphere, or N 2 heating environment.
  20. 一种阵列基板的制备方法，其中，包括如权利要求10所述的薄膜晶体管的制备方法制备薄膜晶体管的步骤。A method for preparing an array substrate, comprising the step of preparing a thin film transistor according to the method for preparing a thin film transistor according to claim 10.
PCT/CN2019/076847 2018-12-20 2019-03-04 Cu film manufacturing method, thin-film transistor manufacturing method, and array substrate manufacturing method WO2020124794A1 (en)

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CN105931991A (en) * 2016-06-17 2016-09-07 深圳市华星光电技术有限公司 Preparation method for electrode
CN108231598A (en) * 2017-12-29 2018-06-29 深圳市华星光电技术有限公司 The preparation method of metal oxide thin-film transistor, the preparation method of array substrate

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