WO2020122694A2 - Display device using semiconductor light-emitting diodes - Google Patents

Abstract

The display device according to the present invention comprises a substrate comprising a first black matrix, and a plurality of display panel modules disposed on the substrate, wherein the display panel modules each comprise: a base unit having wire electrodes; luminous bodies disposed on the base unit and electrically connected to the wire electrodes; a planarization layer for planarizing the base unit having the luminous bodies disposed thereon; and a second black matrix formed on the planarization layer so as not to overlap the semiconductor light-emitting diodes, and the display panel modules are disposed on the substrate such that the boundaries of the display panel modules overlap the first black matrix.

Description

Display device using semiconductor light emitting device

The present invention relates to a semiconductor light emitting device, in particular, a display device using a semiconductor light emitting device having a size of several to several tens of μm.

Recently, a liquid crystal display (LCD), an organic light emitting diode display (OLED), and a micro LED display are competing to realize a large area display in the display technology field.

Among them, a display using a semiconductor light emitting device (micro LED) having a diameter or cross-sectional area of 100 µm or less can provide very high efficiency because it does not absorb light using a polarizing plate or the like.

However, in the case of a micro LED display, it is difficult to transfer elements compared to other technologies because millions of semiconductor light emitting elements are required to realize a large area.

Technologies currently being developed as a micro LED transfer process include pick & place, laser lift-off (LLO), or self-assembly.

An object of the present invention is to provide a seamless display device in which a boundary between a plurality of display panel modules repeatedly disposed is not revealed.

In addition, an object of the present invention is to provide a display device including a structure for guiding the alignment of display panel modules.

The display device according to the present invention includes a substrate including a first black matrix, and a plurality of display panel modules disposed on the substrate, wherein the display panel modules include: a base portion on which a wiring electrode is formed; Light emitting bodies disposed on the base part and electrically connected to the wiring electrode; A planarization layer to planarize the base portion where the light emitters are disposed; And a second black matrix formed not to overlap the light emitters on the planarization layer, wherein the display panel modules are disposed on the substrate such that boundaries of the display panel modules overlap with the first black matrix. It is characterized by.

According to the present invention, the first black matrix is characterized in that it is formed on the surface on which the display panel modules are disposed or vice versa.

According to the present invention, the substrate includes a first coupling portion of an intaglio shape, the display panel modules include a second coupling portion of an embossed shape, and the display panel modules include the second coupling portion of the first coupling portion It is characterized in that it is arranged on the substrate to be inserted.

According to the present invention, the lengths in the x-axis, y-axis, and z-axis directions of the first coupling portion are formed to be equal to or longer than the lengths in the x-axis, y-axis, and z-axis directions of the second coupling portion. .

According to the present invention, the first coupling portion and the second coupling portion are formed at predetermined intervals.

According to the present invention, the second coupling portion is formed to overlap the light emitters on the planarization layer.

According to the present invention, the second coupling portion is characterized in that it comprises a portion overlapping with the second black matrix.

According to the present invention, the first coupling portion is formed so as not to overlap with the first black matrix.

According to the present invention, the display panel modules, characterized in that it further comprises a transparent protective layer between the planarization layer and the second coupling portion or the second black matrix.

According to the present invention, it is characterized in that it further comprises a transparent bonding layer between the substrate and the display panel modules.

The present invention has the effect of implementing a seamless (seamless) by not revealing the boundary of the plurality of display panel modules to the outside.

In addition, the present invention can easily dispose the display panel modules on the substrate through the intaglio and embossed patterns, and does not require expensive devices, thereby reducing the cost.

1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention.

FIG. 2 is a partially enlarged view of part A of the display device of FIG. 1, and FIGS. 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2.

4 is a conceptual diagram showing the flip-chip type semiconductor light emitting device of FIG. 3.

5A to 5C are conceptual views illustrating various forms of color in connection with a flip-chip type semiconductor light emitting device.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.

8 is a cross-sectional view taken along line D-D of FIG. 7.

9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8.

10 is a conceptual diagram showing a display device according to the present invention.

11 is a conceptual diagram illustrating display panel modules according to the present invention.

12 is a cross-sectional view of display panel modules according to the present invention.

13 is a conceptual diagram showing various embodiments of a substrate according to the present invention.

14 is a conceptual view showing another embodiment of a display panel module and a substrate according to the present invention.

15A is a view showing a state in which the display panel module is attached to the substrate of FIG. 13A, and FIG. 15B is a view showing a state in which the display panel module is attached to the substrate of FIG. 13B.

Hereinafter, exemplary embodiments disclosed herein will be described in detail with reference to the accompanying drawings, but the same or similar elements will be given the same reference numbers regardless of the reference numerals, and redundant descriptions thereof will be omitted. The suffixes “module” and “part” for components used in the following description are given or mixed only considering the ease of writing the specification, and do not have meanings or roles that are distinguished from each other. In addition, in the description of the embodiments disclosed herein, when it is determined that detailed descriptions of related known technologies may obscure the gist of the embodiments disclosed herein, detailed descriptions thereof will be omitted. In addition, the accompanying drawings are only for easy understanding of the embodiments disclosed in the present specification, and the technical spirit disclosed in the present specification should not be interpreted as being limited by the accompanying drawings. Also, when an element, such as a layer, region, or substrate, is referred to as being “on” another component, it is understood that there may be an intermediate element directly on or between the other elements. There will be.

The display device described herein includes a mobile phone, a smart phone, a laptop computer, a terminal for digital broadcasting, a personal digital assistant (PDA), a portable multimedia player (PMP), navigation, and a slate PC. It may include (slate PC), tablet PC (tablet PC), ultrabook (ultrabook), digital TV (digital TV), desktop computer (desktop computer), and the like. However, the configuration according to the embodiment described in the present specification may be applied as long as a new product type developed later may include a display.

1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention.

According to the drawing, information processed by the control unit of the display apparatus 100 may be displayed on a flexible display. Flexible displays include bendable, bendable, warpable, collapsible, and curlable displays that can be bent by external forces. For example, the flexible display may be a display fabricated on a thin, flexible substrate that can be bent, bent, folded, or rolled like paper, while maintaining the display characteristics of conventional flat panel displays.

In a state in which the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a “first state”), the display area of the flexible display becomes a flat surface. In the first state, the display area may be curved in a state curved by an external force (for example, a situation having a finite radius of curvature, hereinafter referred to as a “second state”). As illustrated, information displayed in the second state may be visual information output on a curved surface. This visual information is implemented by independently controlling the emission of sub-pixels arranged in a matrix form. The unit pixel refers to a minimum unit for realizing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is illustrated as a type of semiconductor light emitting device that converts current into light. The light emitting diode is formed to have a small size, and through this, it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in more detail with reference to the accompanying drawings.

FIG. 2 is a partially enlarged view of part A of FIG. 1, FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, and FIG. 4 is a conceptual view showing the flip-chip type semiconductor light emitting device of FIG. 3, 5A to 5C are conceptual views illustrating various forms of color in connection with a flip chip type semiconductor light emitting device.

2, 3A, and 3B illustrate a display device 100 using a passive matrix (PM) type semiconductor light emitting device as the display device 100 using a semiconductor light emitting device. However, the following examples are also applicable to an active matrix (AM) type semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. The substrate 110 may include glass or polyimide (PI) to implement flexible performance. In addition, insulating and flexible materials such as PEN (Polyethylene Naphthalate) and PET (Polyethylene Terephthalate) may be used as a component of the substrate 110. Further, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, and the first electrode 120 may be positioned on the substrate 110.

According to the drawing, the insulating layer 160 may be formed by being stacked on the substrate 110 on which the first electrode 120 is located, and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is stacked on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is an insulating and flexible material such as PI, PEN, PET, and the like, and can be formed integrally with the substrate 110 to form one wiring substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is positioned on the insulating layer 160 and is disposed corresponding to the position of the first electrode 120. For example, the auxiliary electrode 170 has a dot shape and may be electrically connected to the first electrode 120 by an electrode hole 171 penetrating the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

According to the accompanying drawings, a conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer performing a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, and a structure in which the conductive adhesive layer 130 is disposed on the substrate without the insulating layer 160 is also possible. . In a structure in which the conductive adhesive layer 130 is disposed on a substrate, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, the conductive adhesive layer 130 may be formed by mixing a conductive material and an adhesive material. In addition, the conductive adhesive layer 130 has ductility, thereby enabling a flexible function in the display device.

For example, the conductive adhesive layer 130 may be an anisotropy conductive film (ACF), an anisotropic conductive paste, or a solution containing conductive particles. The conductive adhesive layer 130 allows electrical interconnection in the z-direction through the thickness, but may be formed of a layer of electrical insulation in the horizontal x-y direction. Therefore, the conductive adhesive layer 130 may be referred to as a z-axis conductive layer (however, hereinafter referred to as a “conductive adhesive layer”).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, the anisotropic conductive medium has conductivity by an anisotropic conductive medium. In this specification, it is described that heat and pressure are applied to the anisotropic conductive film, but in order to make the anisotropic conductive film have partial conductivity, other methods (for example, only one of heat and pressure is applied or by UV curing) Method).

Further, the anisotropic conductive medium may be conductive balls or conductive particles. According to the drawing, the anisotropic conductive film is a film in which a conductive ball is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion is conductive by the conductive ball. In the anisotropic conductive film, the core of the conductive material may contain particles in a form coated with an insulating film made of a polymer material. In this case, the insulating film of the particles contained in the portion to which heat and pressure is applied is destroyed, thereby conducting conductivity by the core. Have it. At this time, the shape of the core is deformed to form a layer contacting each other in the thickness direction of the film. More specifically, heat and pressure are applied to the anisotropic conductive film as a whole, and an electrical connection in the z-axis direction may be partially formed by a height difference of a counterpart adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be a state in which the insulating core contains a plurality of particles coated with a conductive material. In this case, the conductive material of the portion to which heat and pressure is applied is deformed (pressed), and thus becomes conductive in the thickness direction of the film. As another example, a form in which the conductive material penetrates the insulating base member in the z-axis direction and has conductivity in the thickness direction of the film may be used. At this time, the conductive material may have a pointed end.

According to the drawing, the anisotropic conductive film may be a fixed array ACF (arranged array anisotropic conductive film) composed of conductive balls inserted into one surface of an insulating base member. The insulating base member is formed of an adhesive material, and the conductive balls are intensively disposed on the bottom portion of the insulating base member to deform together with the conductive balls when heat and pressure are applied from the base member to conduct conductivity in the vertical direction. Have it.

However, the present invention is not necessarily limited to this, and the anisotropic conductive film is a form in which conductive balls are randomly mixed in an insulating base member, and is composed of a plurality of layers, and a conductive ball is disposed in one layer (double-ACF ) Etc. are all possible.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which conductive balls are mixed with insulating and adhesive base materials. In addition, the solution containing the conductive particles may be a solution containing a conductive particle or nanoparticles.

Referring to the accompanying drawings, the second electrode 140 is positioned on the insulating layer 160 spaced apart from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are located.

After forming the conductive adhesive layer 130 in the state where the auxiliary electrode 170 and the second electrode 140 are positioned on the insulating layer 160, heat and pressure are applied to connect the semiconductor light emitting device 150 in the form of a flip chip. , The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

The semiconductor light emitting device 150 may be a flip chip type light emitting device as shown in FIG. 4.

For example, the semiconductor light emitting device 150 includes a p-type electrode 156, a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, and an active layer 154 formed on the p-type semiconductor layer 155. , An n-type semiconductor layer 153 formed on the active layer 154 and an n-type electrode 152 disposed horizontally apart from the p-type electrode 156 on the n-type semiconductor layer 153. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

2, 3A, and 3B, the auxiliary electrode 170 is formed to be long in one direction so that one auxiliary electrode 170 can be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes 156 of the left and right semiconductor light emitting elements 150 centering on the auxiliary electrode 170 may be electrically connected to one auxiliary electrode.

Specifically, the semiconductor light emitting device 150 is pressed into the conductive adhesive layer 130 by heat and pressure, through which the portion between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 And, only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity, and the rest of the semiconductor light emitting device 150 has no indentation. As such, the conductive adhesive layer 130 may not only couple the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140, but also electrically connect them.

In addition, the plurality of semiconductor light emitting devices 150 constitute an array of light emitting devices, and a phosphor layer 180 is formed on the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices 150 having different luminance values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, a plurality of first electrodes 120 may be provided, and the semiconductor light emitting devices 150 may be arranged in several rows, and the semiconductor light emitting devices 150 in each column may be connected to any one of the plurality of first electrodes 120. It can be electrically connected.

In addition, since the semiconductor light emitting devices 150 are connected in the form of a flip chip, the semiconductor light emitting devices 150 grown on a transparent dielectric substrate can be used. The semiconductor light emitting devices 150 may be nitride semiconductor light emitting devices, for example. The semiconductor light emitting device 150 has excellent luminance, and thus can form individual unit pixels even in a small size.

Referring to the drawings, a partition wall 190 may be formed between the semiconductor light emitting devices 150. In this case, the partition wall 190 may serve to separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, the base member of the anisotropic conductive film may form the partition 190 by inserting the semiconductor light emitting device 150 in the anisotropic conductive film.

In addition, if the base member of the anisotropic conductive film is black, the contrast ratio can be increased while the partition 190 has reflective properties without a separate black insulator.

As another example, a separate reflective partition wall may be provided as the partition wall 190. In this case, the partition wall 190 may include a black or white insulator depending on the purpose of the display device. When the partition wall 190 of the white insulator is used, there may be an effect of increasing reflectivity, and when the partition wall of the black insulator is used, the contrast ratio may be increased while having reflective properties.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, when the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel. can do. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting individual pixels.

That is, a red phosphor 181 capable of converting blue (B) light into red (R) light may be stacked on the blue semiconductor light emitting device 151 at a position forming the red unit pixel, and the green unit pixel may be stacked. In a position forming, a green phosphor 182 capable of converting blue (B) light into green (G) light may be stacked on the blue semiconductor light emitting device 151. In addition, only the blue semiconductor light emitting device 151 may be used alone in a portion constituting a blue unit pixel. In this case, the red (R), green (G), and blue (B) unit pixels may form one pixel. Specifically, a phosphor 180 of one color may be stacked along each line of the first electrode 120, so one line of the first electrode 120 can be an electrode controlling one color. have. That is, red (R), green (G), and blue (B) may be sequentially disposed along the second electrode 140, and a unit pixel may be implemented.

However, the present invention is not necessarily limited thereto, and instead of the phosphor 180, the semiconductor light emitting device 150 and the quantum dot (QD) are combined to form red (R), green (G), and blue (B) unit pixels. You can implement them.

In addition, a black matrix 191 may be disposed between each phosphor layer 180 to improve contrast of contrast.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green may be applied.

Referring to FIG. 5A, each semiconductor light emitting device 150 mainly includes gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit light of various colors including blue. It can be implemented as a light emitting device.

In this case, the semiconductor light emitting device 150 may be provided as red, green, and blue semiconductor light emitting devices to form each sub-pixel. For example, red, green, and blue semiconductor light emitting devices (R, G, B) are alternately arranged, and red, green, and blue semiconductor light emitting devices allow red, green, and blue unit pixels to be one pixel. , Through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device 150 may be a white light emitting device W in which a yellow phosphor layer is provided for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting device W to form a unit pixel. In addition, a unit pixel may be formed using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on an ultraviolet light emitting device (UV). As such, the semiconductor light emitting device 150 can be used not only in the visible light region but also in the entire ultraviolet region, and can be expanded in the form of a semiconductor light emitting element in which ultraviolet ray can be used as an excitation source of the upper phosphor.

Looking again at this example, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. The semiconductor light emitting device 150 has excellent luminance, and thus can form individual unit pixels even with a small size. The size of the individual semiconductor light emitting device 150 may be a rectangular or square device having a side length of 80 μm or less. In the case of a rectangle, the size may be 20×80 μm or less.

In addition, even when a square semiconductor light emitting device 150 having a side length of 10 μm is used as a unit pixel, sufficient brightness can be realized to form a display device. Accordingly, for example, when the size of the unit pixel is a rectangular pixel having one side of 600 µm and the other side of 300 µm, the distance of the semiconductor light emitting device 150 is relatively large enough to implement a flexible display device of HD image quality. .

The display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6.

Referring to FIG. 6, first, the conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are located. The insulating layer 160 is stacked on the first substrate 110 to form a single substrate (or wiring substrate). The wiring substrate includes a first electrode 120, an auxiliary electrode 170, and a second electrode 140. It is placed. The first electrode 120 and the second electrode 150 may be arranged in mutually orthogonal directions. In addition, to implement a flexible display device, the first substrate 110 and the insulating layer 160 may each include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by an anisotropic conductive film, and for this purpose, an anisotropic conductive film may be applied to a substrate positioned on the insulating layer 160.

Next, the second light emitting element 150, which corresponds to the positions of the auxiliary electrodes 170 and the second electrodes 140, and which comprises a plurality of semiconductor light emitting devices 150 constituting individual pixels, is placed in the semiconductor light emitting device 150. The auxiliary electrodes 170 and the second electrode 140 are disposed to face each other.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a sapphire substrate or a silicon substrate.

The semiconductor light emitting device 150 may be effectively used in a display device by having a distance and a size capable of forming a display device when formed in a wafer unit.

Next, the wiring substrate and the second substrate 112 are thermocompressed. For example, the wiring substrate and the second substrate 112 may be thermocompressed by applying an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Due to the properties of the anisotropic conductive film having conductivity by thermal compression, only a portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity, and the electrodes are the semiconductor light emitting device 150 It can be electrically connected to. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and through this, a partition wall may be formed between the semiconductor light emitting device 150.

Next, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting device 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating the wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx).

In addition, a step of forming a phosphor layer on one surface of the semiconductor light emitting device 150 may be further included. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or green phosphor for converting the blue (B) light into a color of a unit pixel emits the blue semiconductor. A layer may be formed on one surface of the device.

The manufacturing method or structure of the display device using the semiconductor light emitting device described above may be implemented in various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to FIGS. 5 and 6.

In addition, in the modified examples or embodiments described below, the same or similar reference numerals are assigned to the same or similar structures as the previous examples, and the description is replaced with the first description.

FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a vertical semiconductor light emitting device of FIG. 8 It is a conceptual diagram.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed, and may include polyimide (PI) in order to implement a flexible display device. Any other insulating and flexible material can be used. .

The first electrode 220 is positioned on the substrate 210 and may be formed as an electrode having a long bar shape in one direction. The first electrode 220 may serve as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. Like a display device to which a flip chip type light emitting device is applied, the conductive adhesive layer 230 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, or a solution containing conductive particles. However, the present embodiment also illustrates a case in which the conductive adhesive layer 230 is implemented by the anisotropic conductive film.

When the anisotropic conductive film is positioned in the state where the first electrode 220 is positioned on the substrate 210, and the semiconductor light emitting device 250 is connected by applying heat and pressure, the semiconductor light emitting device 250 is the first electrode It is electrically connected to 220. At this time, the semiconductor light emitting device 250 is preferably disposed to be positioned on the first electrode 220.

The electrical connection is created because heat and pressure are partially conductive in the thickness direction when anisotropic conductive film is applied as described above. Therefore, in the anisotropic conductive film, it is divided into a portion 231 having conductivity in a thickness direction and a portion 232 having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements mechanical connection as well as electrical connection between the semiconductor light emitting device 250 and the first electrode 220.

As such, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. The semiconductor light emitting device 150 has excellent luminance, and thus can form individual unit pixels even with a small size. The size of the individual semiconductor light emitting device 150 may be a rectangular or square device having a side length of 80 μm or less. In the case of a rectangle, the size may be 20×80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 disposed between the vertical semiconductor light emitting devices 250 in a direction crossing the longitudinal direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting devices 250, respectively It is located.

Referring to FIG. 9, the vertical semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, and an active layer 254 formed on the p-type semiconductor layer 255. ), an n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the lower side may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 positioned at the upper side is the second electrode 240 to be described later. ). The vertical type semiconductor light emitting device 250 has a great advantage of reducing the chip size because the electrodes can be arranged up and down.

Referring to FIG. 8, a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and the phosphor layer 280 for converting the blue (B) light into color of a unit pixel color This may be provided. In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue (B) light into red (R) light may be stacked on the blue semiconductor light emitting device 251 at a position forming the red unit pixel, and the green unit pixel may be stacked. The green phosphor 282 capable of converting blue (B) light into green (G) light may be stacked on the blue semiconductor light emitting device 251 at the position. In addition, the blue semiconductor light emitting device 251 may be used alone in a portion constituting a blue unit pixel. In this case, the red (R), green (G), and blue (B) unit pixels may form one pixel.

However, the present invention is not necessarily limited to this, and as described above in a display device to which a flip chip type light emitting device is applied, other structures for implementing blue, red, and green may be applied.

Looking at the present embodiment, the second electrode 240 is positioned between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 are arranged in a plurality of columns, and the second electrode 240 can be positioned between the columns of the semiconductor light emitting devices 250.

Since the distance between the semiconductor light emitting elements 250 constituting individual pixels is sufficiently large, the second electrode 240 may be positioned between the semiconductor light emitting elements 250.

The second electrode 240 may be formed as an electrode having a long bar shape in one direction, and may be disposed in a direction perpendicular to the first electrode 220.

In addition, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by an electrode protruding from the second electrode 240. Specifically, the connection electrode may be an n-type electrode 252 of the semiconductor light emitting device 250. For example, the n-type electrode 252 is formed as an ohmic electrode for ohmic contact, and the second electrode 240 covers at least a portion of the ohmic electrode by printing or deposition. Through this, the second electrode 240 and the n-type electrode 252 of the semiconductor light emitting device 250 may be electrically connected.

According to the drawing, the second electrode 240 may be positioned on the conductive adhesive layer 230, and if necessary, include silicon oxide (SiOx) or the like on the substrate 210 on which the semiconductor light emitting device 250 is formed. An insulating layer (not shown) may be formed. When the second electrode 240 is positioned after forming the transparent insulating layer, the second electrode 240 is positioned on the transparent insulating layer. Further, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

In the case of using a transparent electrode such as ITO (Indium Tin Oxide) for positioning the second electrode 240 on the semiconductor light emitting device 250, the ITO material has good adhesion to the n-type semiconductor layer 253 There is a problem. Therefore, the present invention has the advantage of not having to use a transparent electrode such as ITO by placing the second electrode 240 between the semiconductor light emitting device 250. Therefore, it is not limited to the selection of a transparent material, and the light extraction efficiency can be improved by using the n-type semiconductor layer 253 and a conductive material having good adhesion as a horizontal electrode.

Referring to the drawing, a partition wall 290 may be positioned between the semiconductor light emitting devices 250. A partition wall 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 constituting individual pixels. In this case, the partition wall 290 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230. For example, the base member of the anisotropic conductive film may form the partition wall 290 by inserting the semiconductor light emitting device 250 into the anisotropic conductive film.

In addition, when the base member of the anisotropic conductive film is black, the partition wall 290 may have reflective properties and increase contrast ratio without a separate black insulator.

As another example, the partition wall 290 may be provided with a reflective partition wall separately. The partition wall 290 may include a black or white insulator depending on the purpose of the display device.

If the second electrode 240 is located directly on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the partition wall 290 is between the vertical semiconductor light emitting device 250 and the second electrode 240. Can be located at Accordingly, individual unit pixels may be configured with a small size using the semiconductor light emitting device 250, and the distance of the semiconductor light emitting device 250 is relatively large, so that the second electrode 240 is the semiconductor light emitting device 250. It can be placed in between, there is an effect that can be a flexible display device of HD quality.

In addition, a black matrix 291 may be disposed between each phosphor to improve contrast of contrast.

As described, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby configuring individual pixels in the display device. The semiconductor light emitting device 250 has excellent luminance, and thus can form individual unit pixels even in a small size. Accordingly, a full color display in which unit pixels of red (R), green (G), and blue (B) form one pixel may be implemented by the semiconductor light emitting device 250.

Meanwhile, a large area display device is formed by repeatedly arranging a plurality of display panel modules on a substrate.

In order to realize a high-quality large-area display device, it is important to make a boundary (seam) portion of the display panel modules constituting the display device not to be visually identified, which is associated with precise placement of the display panel modules.

The display panel modules are disposed on the substrate one by one by means of a specially manufactured expensive jig. The jig precisely controls the position of the display panel modules so that the gap between the display panel modules is minimized.

However, it is limited to completely control and arrange individually manufactured display panel modules using a mechanically operated jig.

Specifically, the spacing of the light emitters transferred to the display panel module may not be constant. This causes a luminance mismatch at the border portion of the display panel modules. In addition, the display panel modules may have irregular border cuts or different thicknesses depending on the degree of processing. In this case, if mechanical tiling is performed, damage such as breakage or distortion may occur at the boundary of the display panel modules. That is, even if a jig is used, a tolerance may still occur in the boundary portion of the display modules in the tiling process, and the seam defect may not be completely solved.

Meanwhile, a black film is sometimes attached to the boundary of the display panel modules in order to block the defects in the seams. However, as described above, when alignment tolerances of the luminous body occur during the transfer process, the black film covers a part of the pixel area, so that the area where light is emitted for each pixel may be different.

The present invention relates to a display device implemented with a seamless (seamless) that does not reveal the boundaries of a plurality of display panel modules repeatedly disposed.

The display device according to the present invention may be implemented in a passive matrix (PM) method or an active matrix (AM) method. In this specification, detailed description thereof will be omitted.

10 is a conceptual diagram showing a display device according to the present invention, Figure 11 is a conceptual diagram showing a display panel module according to the present invention, Figure 12 is a cross-sectional view of the display panel module according to the present invention, Figure 13 is according to the present invention A conceptual diagram showing various embodiments of a substrate, FIG. 14 is a conceptual diagram showing another embodiment of a display panel module and a substrate according to the present invention, and FIG. 15A illustrates a state in which a display panel module is attached to the substrate of FIG. 13A. 15B is a view showing a state in which a display panel module is attached to the substrate of FIG. 13B.

The display apparatus 1000 according to the present invention includes a substrate 1100 and a plurality of display panel modules 1200 disposed on the substrate 1100.

The display panel modules 1200 may be repeatedly disposed on the substrate 1100. The display panel modules 1200 may be disposed such that the boundary between the adjacent display panel modules 1200 and their boundaries abuts or the distance between them is minimized.

In addition, the display panel modules 1200 may not include a bezel at the boundary, and thus can be freely extended to realize a large area.

According to the present invention, the substrate 1100 may include a first black matrix 1110. The display panel modules 1200 may be disposed such that their boundaries 1201 overlap with the first black matrix 1110 when they are disposed on the substrate 1100. Therefore, the boundary 1201 of the display panel modules 1200 overlaps with the black matrix 1110 and is black-processed, so that the boundary 1201 is not exposed to the outside and seamless can be implemented.

According to the present invention, the display apparatus 1000 may further include a transparent bonding layer (not shown) between the substrate 1100 and the display panel modules 1200. That is, the display panel modules 1200 may be bonded to the substrate 1100 on a transparent bonding layer.

Specifically, before placing the display panel modules 1200 on the substrate 1100, a transparent adhesive composition is applied to one surface of the display panel modules 1200, and the transparent adhesive composition thus applied is the display device 1000 described above. ) May be a transparent bonding layer.

According to the present invention, the substrate 1100 may be a glass substrate, but is not limited thereto. Further, the substrate 1100 may include the first black matrix 1100 described above to implement seamless. The first black matrix 1100 may be formed on a surface on which the display panel modules 1200 are disposed or vice versa.

The first black matrix 1100 may be formed by applying a black color ink or resist to the patterned glass surface. Alternatively, it may be formed by patterning a metal material on the glass surface and then applying black ink or resist on the metal material. However, it is needless to say that the present invention is not limited to this method and can be formed through other methods.

The display panel modules 1200 include a base portion 1210, a wiring electrode (not shown), light emitters 1050, a planarization layer 1220, and a second black matrix 1230.

The base portion 1210 may be formed of a flexible and insulating material including polymer. For example, the base portion 1210 may be a polyimide substrate, but is not limited thereto.

A wiring electrode may be formed on the base portion 1210. In the wiring electrode, the first wiring electrode extending in the row direction and the second wiring electrode extending in the column direction may be arranged in a plurality of lines. In addition, of course, the base portion 1210 may include various configurations for driving the light emitters 1050 to be described later in addition to the wiring electrode.

The light emitters 1050 may be disposed on the base part 1210, and the light emitters 1050 may be disposed in a pixel area formed in a matrix arrangement on the base part 1210. In the figure, one display panel module 1200 is illustrated as including pixel regions in a 3x3 matrix arrangement.

For example, the light emitters 1050 may be semiconductor light emitting devices (micro LEDs) having a size of several to several tens of micrometers, and may be flip chip, horizontal or vertical semiconductor light emitting devices. In addition, it may be composed of semiconductor light emitting devices that emit the same color or may be composed of semiconductor light emitting devices that emit different colors.

Specifically, in the former case, the light emitters 1050 may be composed of blue semiconductor light emitting devices, and a wavelength conversion layer (or phosphor layer) and a color filter may be additionally disposed on the light emitter 1050 to implement green and red colors. have. On the other hand, in the latter case, the light emitters 1050 may be provided with blue, green, and red light emitters 1050, and may implement blue, red, and green colors without the need for a color filter or the like.

However, an embodiment in which a quantum dot (QD) device, an OLED device, or the like becomes the light emitting body 1050 is not limited thereto.

Also, the light emitters 1050 may be electrically connected to a wiring electrode formed on the base portion 1210. The connection method with the wiring electrode may be variously applied depending on the shape of the light emitter 1050.

According to the present invention, the display panel modules 1200 may include a planarization layer 1220 to planarize the base portion 1210 on which the light emitters 1050 are disposed. For example, the planarization layer 1220 may be formed to fill between the light emitters 1050, and thus the planarization layer 1220 may serve as a partition wall separating the pixel region. For example, the planarization layer 1220 may be formed of an organic insulating material, and may be formed to a thickness of several to several tens of μm.

The second black matrix 1230 may be formed on the planarization layer 1220. The second black matrix 1230 may be formed not to overlap the light emitters 1050. That is, the second black matrix 1230 is formed in an area except for the upper portion of the pixel area in which the light emitters 1050 are disposed, and the upper part of the pixel area is in an open state to emit light output from the light emitters 1050. Can be. The second black matrix 1230 may be formed by applying a black color ink or resist to the planarization layer 1220, and may be formed in other ways. The second black matrix 1230 absorbs light output from the light emitter 1050 to improve the contrast ratio of the display device 1000.

Meanwhile, the display apparatus 1000 according to the present invention may include a structure that guides the alignment of the display panel modules 1200. This structure may be formed on both the substrate 1100 and the display panel modules 1200.

According to an embodiment of the present invention, the substrate 1100 may include a first coupling portion 1120 of an intaglio shape, and the display panel modules 1200 may include a second coupling portion 1240 of an embossed shape. . On the contrary, it is also possible that the substrate 1100 includes an embossed second coupling portion, and the display panel modules 1200 include an engraved first coupling portion. However, in this specification, a description will be given of an embodiment in which the substrate 1100 includes an intaglio-shaped first coupling portion, and the display panel modules 1200 include an embossed second coupling portion.

According to this embodiment, the display panel modules 1200 may be disposed on the substrate 1100 such that the second coupling portion 1240 is inserted into the first coupling portion 1120. To this end, the first coupling portion 1120 and the second coupling portion 1240 may be formed at the same interval. The first coupling portion 1120 and the second coupling portion 1240 may be formed at predetermined intervals.

In addition, the lengths of the first coupling portion 1120 in the x-axis, y-axis, and z-axis directions may be the same as or longer than the lengths of the second coupling portion 1240 in the x-axis, y-axis, and z-axis directions. . Here, the z-axis direction refers to the thickness direction of the substrate 1100 and the display panel modules 1200, and the x-axis and y-axis directions refer to the remaining directions. The lengths of the first coupling portion 1120 and the second coupling portion 1240 in the x-axis, y-axis, and z-axis directions may all be several to several hundreds of μm.

When the lengths in the x-axis, y-axis, and z-axis directions of the first coupling portion 1120 are longer than the lengths in the x-axis, y-axis, and z-axis directions of the second coupling portion 1240, as shown in FIG. 10. A portion of the second black matrix 1230 around the pixel area may be exposed through the substrate 1100.

According to an embodiment of the present invention, the second coupling portion 1240 may be formed to overlap the light emitters 1050 on the planarization layer 1220. That is, the second coupling portion 1240 may be formed to cover the upper portion of the pixel area, in this case, the second coupling portion 1240 may be formed of a light-transmitting transparent material.

The second coupling portion 1240 may be formed on the pixel region through a photo process. The second coupling part 1240 may be formed to have the same width as the pixel area or a wider width than the pixel area. In other words, the second coupling unit 1240 may be formed at the same interval as the pixel area or at a narrower interval than the pixel area. When the second coupling portion 1240 is formed to be wider than the pixel area, the second coupling portion 1240 may include a portion overlapping the second black matrix 1230. In this case, the second coupling part 1240 may cover a portion of the second black matrix 1230 around the pixel area.

Meanwhile, when the second coupling part 1240 is formed to overlap the light emitters 1050, the first coupling part 1120 of the substrate 1100 into which the second coupling part 1240 is inserted is a first black matrix ( 1110). When the first black matrix 1110 is directly formed on the first coupling portion 1120 or formed on an area overlapping with the first coupling portion 1120, the light output from the light emitters 1050 is first This is because it is blocked by the black matrix 1110.

Meanwhile, the pattern of the first coupling portion 1120 of the substrate 1100 may be formed through a photo process.

In another embodiment, the second coupling unit 1240 of the display panel modules 1200 may be formed in a region between pixels. In this case, the second coupling unit 1240 may be formed in the entire area between the pixel and the pixel or may be formed in a partial area.

In addition, the second coupling portion 1240 may be formed on the second black matrix 1230 in the region between the pixel or the second coupling portion 1240 may correspond to the second black matrix 1230 soon. .

When the second coupling portion 1240 is formed in the region between the pixel and the pixel, the first coupling portion 1120 of the substrate 1100 into which the second coupling portion 1240 is inserted is output from the light emitters 1050 It may be formed to overlap the first black matrix 1110 so that light is not blocked.

In addition, the display panel modules 1200 according to the present invention is a transparent protective layer 1250 formed of a light-transmitting transparent material between the planarization layer 1220 and the second coupling portion 1240 or the second black matrix 1230 It may further include.

The transparent protective layer 1250 may be formed to cover one surface of the planarization layer 1220 filled between the pixel region and the upper portion of the opened pixel region. The second black matrix 1230 and the second coupling portion 1240 may be sequentially formed on the transparent protective layer 1250.

Next, a process of disposing the display panel modules 1200 on the substrate 1100 will be described.

The display panel modules 1200 may be sequentially arranged one by one on the substrate 1100. In detail, according to the present invention, aligning the display panel modules 1200 such that the second coupling portion 1240 formed in the display panel modules 1200 corresponds to the first coupling portion 1120 formed in the substrate 1100. Can be performed.

Thereafter, the display panel modules 1200 may be bonded to the substrate 1100 by inserting the second coupling portion 1240 of the display panel modules 1200 into the first coupling portion 1120 of the substrate 1100. have.

At this time, before aligning the display panel modules 1200, a step of applying a transparent adhesive composition to one surface of the display panel modules 1200 disposed to face the substrate 1100 may be preceded.

That is, since the bonding process according to the present invention is performed by aligning the first bonding part 1120 formed on the substrate 1100 and the second bonding part 1240 formed on the display panel modules 1200 to correspond to each other, the bonding process This is convenient and can prevent the display panel modules 1200 from being broken.

In addition, the first coupling portion 1120 and the second coupling portion 1240 are formed with high precision so that the area of the pixel area is constant even if the spacing of the light emitters 1050 included in the display panel modules 1200 is not constant. Can be maintained.

In addition, in the display apparatus 1000 according to the present invention, areas other than the pixel area are double-black processed by the first and second black matrices 1110 and 1230, thereby improving image quality.

Claims (10)

1. A substrate including a first black matrix,

   It includes a plurality of display panel modules disposed on the substrate,

   The display panel modules include a base portion on which a wiring electrode is formed;

   Light emitting bodies disposed on the base part and electrically connected to the wiring electrode;

   A planarization layer to planarize the base portion where the light emitters are disposed; And

   A second black matrix formed on the planarization layer so as not to overlap with the light emitters,

   The display panel modules are arranged on the substrate so that the boundary of the display panel modules overlap with the first black matrix, the display device.
2. According to claim 1,

   The first black matrix is formed on the surface on which the display panel modules are disposed or vice versa.
3. According to claim 1,

   The substrate includes an intaglio-shaped first coupling portion, and the display panel modules include an embossed second coupling portion,

   The display panel modules are arranged on the substrate so that the second coupling portion is inserted into the first coupling portion, the display device.
4. According to claim 3,

   The length of the first coupling portion in the x-axis, y-axis, and z-axis directions is equal to or longer than the length of the second coupling portion in the x-axis, y-axis, and z-axis directions.
5. According to claim 3,

   The first coupling portion and the second coupling portion, characterized in that formed at a predetermined interval, the display device.
6. The method of claim 5,

   The second coupling portion, the display device, characterized in that formed on the flattening layer so as to overlap with the light emitters.
7. The method of claim 6,

   The second coupling portion, characterized in that it comprises a portion overlapping the second black matrix, the display device.
8. The method of claim 6,

   The first coupling portion, characterized in that it is formed so as not to overlap with the first black matrix, the display device.
9. According to claim 3,

   The display panel modules, characterized in that it further comprises a transparent protective layer between the planarization layer and the second coupling portion or the second black matrix, the display device.
10. According to claim 1,

    And a transparent bonding layer between the substrate and the display panel modules.

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