WO2020113664A1 - 集成化超分辨激光直写装置及直写方法 - Google Patents

集成化超分辨激光直写装置及直写方法 Download PDF

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Publication number
WO2020113664A1
WO2020113664A1 PCT/CN2018/121449 CN2018121449W WO2020113664A1 WO 2020113664 A1 WO2020113664 A1 WO 2020113664A1 CN 2018121449 W CN2018121449 W CN 2018121449W WO 2020113664 A1 WO2020113664 A1 WO 2020113664A1
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sample
dichroic mirror
laser
fiber
direct writing
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PCT/CN2018/121449
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English (en)
French (fr)
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曾爱军
刘铁诚
胡敬佩
朱玲琳
黄惠杰
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中国科学院上海光学精密机械研究所
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Priority to US17/420,384 priority Critical patent/US11726407B2/en
Publication of WO2020113664A1 publication Critical patent/WO2020113664A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

Definitions

  • the invention belongs to the technical field of laser direct writing and maskless lithography, in particular to an integrated laser direct writing device and a direct writing method based on far-field optical microscopy technology.
  • the writing resolution is limited by the Abbe diffraction limit, and the minimum writing size is about half a wavelength.
  • the introduction of induced light and vortex suppression light can break through the diffraction limit, further reduce the size, and improve the writing resolution.
  • the existing super-resolution laser direct writing technology is built with a free optical path, and it is impossible to realize the fiberization and system of key devices Integrated.
  • the purpose of the present invention is to propose an integrated super-resolution laser direct writing device and direct writing method, which solves the problem that the existing super-resolution laser direct writing prototype cannot realize the fiberization and system integration of key devices.
  • the field of direct writing and maskless lithography has great application value.
  • An integrated super-resolution laser direct writing device includes a continuous laser, a first fiber coupler, a single-mode fiber, a second continuous laser, a second fiber coupler, a first ring photonic crystal fiber, a bifurcated fiber, a lens group, and a One dichroic mirror, LED light source, lens, second dichroic mirror, auto focus module, third dichroic mirror, third fiber coupler, square rate gradient fiber, nano-stage, second lens, CMOS camera And control system.
  • the control system is composed of a computer and a field programmable gate array (Field-Programmable Gate Array, hereinafter referred to as FPGA).
  • FPGA Field-Programmable Gate Array
  • the laser output from the continuous laser is input into the single-mode fiber through the first fiber coupler as central induced light; the laser output from the second continuous laser is input into the first ring photonic crystal fiber through the second fiber coupler as the peripheral vortex Suppress light; after the peripheral vortex suppression light and the center induced light are combined by a bifurcated fiber, the beam is expanded by the lens group, and then enters the first dichroic mirror, passes the first After being reflected by a dichroic mirror, it passes through the second dichroic mirror and the third dichroic mirror in order, and then enters the third optical fiber coupler, and then passes through the third optical fiber coupler and the square rate gradient fiber in turn. Irradiate on the sample;
  • the light beam emitted by the LED light source is expanded by the lens, then enters the second dichroic mirror, and after being reflected by the second dichroic mirror, it is sequentially coupled to the third dichroic mirror and the third optical fiber After entering the square rate gradient fiber, it is irradiated on the sample, reflected by the sample, and then returned along the original optical path, followed by the square rate gradient fiber, the third fiber coupler, and the third dichroic mirror in sequence, and then incident To the second dichroic mirror, after sequentially transmitting through the second dichroic mirror and the first dichroic mirror, it is incident on the second lens, after being focused by the second lens, it is incident on the CMOS camera, Imaging by the CMOS camera;
  • the eccentric light beam emitted by the autofocus module After being reflected by the third dichroic mirror, the eccentric light beam emitted by the autofocus module enters the square-rate gradient fiber through the fiber coupler, irradiates the sample, and returns to the original optical path after being reflected by the sample, and then passes the
  • the square-rate gradient fiber and the third fiber coupler, after being incident on the third dichroic mirror, are sequentially transmitted through the third dichroic mirror, the second dichroic mirror, and the first dichroic mirror, and then are incident on the
  • the second lens of the lens is focused by the second lens and enters the CMOS camera, and is imaged by the CMOS camera;
  • the control system is respectively connected to the control end of the continuous laser, the second continuous laser, the LED light source, the autofocus module and the nano-stage, and the control system is connected to the output end of the CMOS camera.
  • the lens group is composed of a pair of positive and negative lenses, and expands the light beam.
  • the sample is composed of photoresist material and substrate in order from top to bottom.
  • the photoresist material is a photopolymerizable material and corresponding photoinitiator and inhibitor.
  • the photopolymerization material is pentaerythritol pentaacrylate, dipentaerythritol pentaacrylate or triethylene glycol dimethacrylate, and the photoinitiator is Michler's ketone, camphorquinone or 4-dimethylaminobenzene Ethyl formate, the inhibitor is tetraethylthiuram disulfide.
  • the laser direct writing method using the integrated super-resolution laser direct writing device includes the following steps:
  • the control system controls the movement of the nano-stage to move the area to be engraved on the sample plane to the initial recording point.
  • the control system controls to turn on the second continuous laser, and the output laser forms vortex light through the second fiber coupler and the first ring photonic crystal fiber , Excite the photoinhibitor outside the vortex light center d/2 range in the recording point area of the sample plane, inhibit the polymerization of the photopolymerized material;
  • the control system controls the continuous laser, and the output laser is formed by the first fiber coupler and single-mode fiber Center induced light, induced photoinitiator in the range of d/2 of the vortex light center of the recording point area to initiate the polymerization of the photopolymerized material; after the writing time meets 400ms-700ms, proceed to step 4);
  • the control system controls to turn off the continuous laser and the second continuous laser, and controls the movement of the nano-stage to move the sample plane to be written to the next recording point, and the writing time meets 400ms-700ms; until the sample plane to be written All the dots are written.
  • the steps 2) to 3) further include the step of determining the shape of the sample, specifically the output command of the control system, so that the LED light source is turned on, the emitted light is irradiated on the sample through the optical path, and the beam reflected by the sample is focused on the CMOS camera for imaging. Observe the sample morphology on the corresponding software on the computer. When the sample morphology does not meet the requirements, return to step 1), otherwise enter step 3).
  • FIG. 1 is an optical path diagram of the integrated super-resolution laser direct writing device of the present invention.
  • Figure 2 is the absorption spectrum of photoresist materials, photoinitiators and photoinhibitors
  • FIG. 3 is a schematic diagram of steps of a direct writing method of an integrated super-resolution laser direct writing device according to an embodiment of the invention
  • FIG. 1 is an optical path diagram of an integrated super-resolution laser direct writing device.
  • the integrated device includes a continuous laser 1, a first fiber coupler 2, a single-mode fiber 3, a second continuous laser 4, a second fiber coupler 5, a first ring photonic crystal fiber 6, a bifurcated fiber 7 , Lens group 8, first dichroic mirror 9, LED light source 10, lens 11, second dichroic mirror 12, autofocus module 13, third dichroic mirror 14, third fiber coupler 15, square ratio Gradient fiber 16, nano-stage 17, second lens 18, CMOS camera 19, control system 20.
  • the control system is composed of a computer 201 and a field programmable gate array 202 (Field-Programmable Gate Array, hereinafter referred to as FPGA).
  • FPGA Field-Programmable Gate Array
  • the laser output from the continuous laser 1 is input into the single-mode fiber 3 through the first fiber coupler 2 as central induced light; the laser output from the second continuous laser 4 is input into the first ring photonic crystal fiber 6 through the second fiber coupler 5 , As the peripheral vortex suppression light; the peripheral vortex suppression light and the central induced light are combined by the bifurcated fiber 7 and then the beam is expanded by the lens group 8 and enters the first dichroic mirror 9. After being reflected by the first dichroic mirror 9, it is sequentially transmitted through the second dichroic mirror 12 and the third dichroic mirror 14 and then enters the third fiber coupler 15 through the third fiber After the coupler 15 and the square rate gradient optical fiber 16, illuminate the sample;
  • the light beam emitted by the LED light source 10 is expanded by the lens 11 and then enters the second dichroic mirror 12, after being reflected by the second dichroic mirror 12, it passes through the third dichroic mirror 14 and After the third optical fiber coupler 15 enters the square rate gradient optical fiber 16, it irradiates on the sample, and then returns along the original optical path after being reflected by the sample, and passes through the square rate gradient optical fiber 16, the third optical fiber coupler 15 and the third After the dichroic mirror 14, it enters the second dichroic mirror 12, passes through the second dichroic mirror 12 and the first dichroic mirror 9, and then enters the second lens 18, After being focused by the second lens 18, it enters the CMOS camera 19 and is imaged by the CMOS camera 19;
  • the eccentric light beam emitted by the autofocus module 13 After being reflected by the third dichroic mirror 14, the eccentric light beam emitted by the autofocus module 13 enters the square-rate gradient fiber 16 through the fiber coupler 15 and irradiates the sample. After being reflected by the sample, it returns along the original optical path, and in turn After entering the third dichroic mirror 14 through the square-ratio gradient fiber 16 and the third fiber coupler 15, the third dichroic mirror 14, the second dichroic mirror 12 and the first dichroic After the mirror 9 is transmitted, it enters the second lens 18, is focused by the second lens 18, and then enters the CMOS camera 19, and is imaged by the CMOS camera 19;
  • the control system 20 is connected to the control ends of the continuous laser 1, the second continuous laser 4, the LED light source (10), the autofocus module 13 and the nano-stage 17 respectively, and the control system 20 is connected to the CMOS camera The output of 19 is connected.
  • the lens group 8 is composed of a pair of positive and negative lenses, and expands the light beam.
  • the sample is composed of photoresist material and substrate in order from top to bottom.
  • the photoresist material is a photopolymerizable material and corresponding photoinitiator and inhibitor.
  • the photopolymerization material is pentaerythritol pentaacrylate, dipentaerythritol pentaacrylate or triethylene glycol dimethacrylate, and the photoinitiator is Michler's ketone, camphorquinone or 4-dimethylaminobenzene Ethyl formate, the inhibitor is tetraethylthiuram disulfide.
  • Different photoresist materials use different photoinitiators and photoinhibitors, and the parameters of the first continuous laser 1 and the second continuous laser 4 are also different.
  • Figure 2 is the absorption spectrum of photoresist and photoinitiator and photoinhibitor. It can be seen from the figure that the photoresist has no absorption peak at 300nm-800nm, the absorption peak of photoinitiator is at 460nm, and the absorption of photoinhibitor The peak is at 350nm.
  • the photoinitiator breaks the initiator chemical bond by absorbing 460nm laser energy and induces the polymerization reaction of the photoresist monomer.
  • the photoinhibitor breaks the inhibitor chemical bond by absorbing 350nm laser energy.
  • the photoresist monomer is inhibited from polymerizing itself. Therefore, for this feature, the center laser-induced and peripheral hollow light suppression can be used to achieve the inscription. That is, the wavelength of the first continuous laser is selected to be 460 nm, and the wavelength of the second continuous laser is selected to be 350 nm.
  • FIG. 3 is a schematic diagram of steps of a direct writing method of an integrated super-resolution laser direct writing device according to an embodiment of the present invention. The method is described in detail in Embodiment 1.
  • FIG. 3 is a schematic diagram of steps of a direct writing method of an integrated super-resolution laser direct writing device according to an embodiment of the present invention. The method is described in detail in Embodiment 1.
  • the photoresist has no absorption peak at 300nm to 800nm, the absorption peak of the photoinitiator camphorquinone is 460nm, and the photoinhibitor tetraethyl disulfide
  • the absorption peak of thiuram is 350 nm, that is, the wavelength of the first continuous laser is 460 nm, and the absorption wavelength of the second continuous laser is 350 nm.
  • the control system 20 controls the movement of the nano-stage 17 to move the area of the sample plane to be written to the initial recording point, the control system 20 controls the 350 nm laser 4 to be turned on, and the output laser passes through the second fiber coupler 5 and the first ring photonic crystal fiber 6 Form vortex light, excite tetraethylthiuram disulfide outside the center of the vortex light in the recording point area of the sample plane, break its chemical bond, and inhibit the polymerization reaction of triethylene glycol dimethacrylate; control The system 20 controls to turn on the 460nm continuous laser 1, and the output light forms the central induced light through the first optical fiber coupler 2 and the single-mode optical fiber 3, induces camphorquinone within the range of d/2 of the vortex optical center of the recording point area, and induces triethylenedioxide Alcohol dimethacrylate polymerizes; after the writing time meets 400ms-700ms, go to step 4);
  • the control system 20 controls to turn off the 350nm laser 1 and the 460nm laser 4, and controls the nano-stage 17 to move, so that the sample plane to be written area moves to the next recording point, the writing time meets 400ms-700ms; All dots in the writing area are written.
  • the output command causes the LED light source 10 to be turned on, and the outgoing light is irradiated on the sample through the optical path.
  • the beam reflected by the sample is focused on the CMOS camera 19 for imaging, and the sample shape is observed on the corresponding software on the computer 20.
  • the sample shape does not meet the requirements , Return to step 1), otherwise go to step 3).

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Laser Beam Processing (AREA)
  • Optical Couplings Of Light Guides (AREA)
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Abstract

一种集成化超分辨激光直写装置以及直写方法，该装置包括连续激光器(1)、第一光纤耦合器(2)、单模光纤(3)、第二连续激光器(4)、第二光纤耦合器(5)、第一环形光子晶体光纤(6)、分叉光纤(7)、透镜组(8)、第一二向色镜(9)、LED光源(10)、透镜(11)、第二二向色镜(12)、自动聚焦模块(13)、第三二向色镜(14)、第三光纤耦合器(15)、平方率渐变光纤(16)、纳米位移台(17)、第二透镜(18)、CMOS相机(19)和控制系统(20)。该装置实现了关键器件光纤化和系统集成化，能更好的应用于激光直写领域。

Description

集成化超分辨激光直写装置及直写方法 技术领域
本发明属于激光直写、无掩膜光刻技术领域，特别是基于远场光学显微技术的集成化激光直写装置和直写方法。
背景技术
基于远场光学显微技术的激光直写方法，刻写分辨率受限于阿贝衍射极限的限制，最小的刻写尺寸为半个波长左右。而通过引入诱导光和涡旋抑制光，则可以突破衍射极限，进一步缩小尺寸，提高刻写分辨率，目前现有的超分辨激光直写技术均采用自由光路搭建，无法实现关键器件光纤化和系统集成化。
发明内容
本发明的目的是提出一种集成化超分辨激光直写装置和直写方法，该装置和方法解决了现有超分辨激光直写样机无法实现关键器件光纤化和系统集成化的问题，在激光直写、无掩膜光刻领域有很大的应用价值。
为达到上述目的，本发明的技术解决方案如下：
一种集成化超分辨激光直写装置包括连续激光器、第一光纤耦合器、单模光纤、第二连续激光器、第二光纤耦合器、第一环形光子晶体光纤、分叉光纤、透镜组、第一二向色镜、LED光源、透镜、第二二向色镜、自动聚焦模块、第三二向色镜、第三光纤耦合器、平方率渐变光纤、纳米位移台、第二透镜、CMOS相机和控制系统。
所述的控制系统由计算机和现场可编程门阵列(Field－Programmable Gate Array，以下简称FPGA)构成。
所述的连续激光器输出的激光经第一光纤耦合器输入单模光纤，作为中心诱导光；第二连续激光器输出的激光经第二光纤耦合器，输入第一环形光子晶体光纤，作为外围涡旋抑制光；所述的外围涡旋抑制光与中心诱导光经分叉光纤合束后，经所述的光束经透镜组扩束后，入射到所述的第一二向色镜，经该第一二向色镜反射后，依次经过第二二向色镜、第三二向色镜透射后入射到所述的第三光纤耦合器，依次经第三光纤耦合器和平方率渐变光纤后，照射在样品上；
所述的LED光源发出的光束经透镜扩束后，入射到所述的第二二向色镜，经该第二二向色镜反射后，依次经第三二向色镜和第三光纤耦合器后，射入平方率渐变光纤后，照射在样品上，经样品反射后沿原光路返回，依次经所述的平方率渐变光纤、第三光纤耦合器和第三二向色镜后，入射到所述的第二二向色镜，依次经第二二向色镜和第一二向色镜透射后，入射到所述的第二透镜，经该第二透镜聚焦后射 入CMOS相机，经该CMOS相机成像；
所述的自动聚焦模块发出的偏心光束，经第三二向色镜反射后，通过光纤耦合器进入平方率渐变光纤，照射在样品上，经样品反射后沿原光路返回，依次经所述的平方率渐变光纤和第三光纤耦合器，入射到第三二向色镜后，依次经第三二向色镜、第二二向色镜和第一二向色镜透射后，入射到所述的第二透镜，经该第二透镜聚焦后射入CMOS相机，经该CMOS相机成像；
所述的控制系统分别与所述的连续激光器、第二连续激光器、LED光源、自动聚焦模块和纳米位移台的控制端相连，所述的控制系统与CMOS相机的输出端相连。
所述的透镜组由一对正负透镜组成，对光束进行扩束。
所述的样品为由上至下依次由光刻胶材料和基底组成。
所述的光刻胶材料为光致聚合材料以及相应的光引发剂和抑制剂。
所述的光致聚合材料为季戊四醇五丙烯酸酯、双季戊四醇五丙烯酸酯或三乙二醇二甲基丙烯酸酯，所述的光引发剂为米氏酮、樟脑醌或4-二甲基氨基苯甲酸乙酯，所述的抑制剂为二硫化四乙基秋兰姆。
利用所述的集成化超分辨激光直写装置的激光直写方法，该方法包括以下步骤：
1)对样品进行预处理：在光致聚合材料中加入一定量的光引发剂和光抑制剂混合均匀；
2)将样品置于所述的纳米位移台上，控制系统输出指令，使得自动聚焦模块的激光器打开，出射光经光路照射在样品上，经样品反射的光束聚焦在CMOS相机，利用计算机的离焦判断模块实现自动聚焦；
3)控制系统控制纳米位移台移动，使样品平面待刻写区域移动至初始记录点，控制系统控制开启第二连续激光器，输出的激光通过第二光纤耦合器、第一环形光子晶体光纤形成涡旋光，激发样品平面的记录点区域涡旋光中心d/2范围外的光抑制剂，抑制光致聚合材料发生聚合；控制系统控制开启连续激光器，输出的激光经第一光纤耦合器、单模光纤形成中心诱导光，诱导记录点区域涡旋光中心d/2范围内的光引发剂，引发光致聚合材料发生聚合；刻写时间满足400ms-700ms后，进入步骤4)；
4)控制系统控制关闭所述的连续激光器和第二连续激光器，并控制纳米位移台移动，使样品平面待刻写区域移动至下一记录点，刻写时间满足400ms-700ms；直至样品平面待刻写区域的所有点刻写完成。
在所述的步骤2)-3)还包括样品形貌判断步骤，具体是控制系统输出指令，使得LED光源打开，出射光经光路照射在样品上，经样品反射的光束聚焦在CMOS相机成像，在计算机上的相应软件上观测样品形貌，当样品形貌不符合要求时，返回 步骤1)，否则进入步骤3)。
与现有技术相比，本发明的技术效果如下：
解决了超分辨激光直写原理样机只能在实验室由自由光路搭建，无法实现关键器件光纤化和系统集成化的问题，在激光直写、无掩膜光刻领域有很大的应用价值。
附图说明
图1为本发明集成化超分辨激光直写装置光路图。
图2为光刻胶材料及光引发剂、光抑制剂的吸收光谱图
图3为本发明实施例集成化超分辨激光直写装置的直写方法步骤示意图
具体实施方式
下面通过实施例和附图对本发明作进一步说明，但不应以此限制本发明的保护范围。
先请参阅图1，图1为集成化超分辨激光直写装置光路图。由图可见，该集成化装置包括连续激光器1、第一光纤耦合器2、单模光纤3、第二连续激光器4、第二光纤耦合器5、第一环形光子晶体光纤6、分叉光纤7、透镜组8、第一二向色镜9、LED光源10、透镜11、第二二向色镜12、自动聚焦模块13、第三二向色镜14、第三光纤耦合器15、平方率渐变光纤16、纳米位移台17、第二透镜18、CMOS相机19、控制系统20。
所述的控制系统由计算机201和现场可编程门阵列202(Field－Programmable Gate Array，以下简称FPGA)构成。
所述的连续激光器1输出的激光经第一光纤耦合器2输入单模光纤3，作为中心诱导光；第二连续激光器4输出的激光经第二光纤耦合器5输入第一环形光子晶体光纤6，作为外围涡旋抑制光；所述的外围涡旋抑制光与中心诱导光经分叉光纤7合束后经所述的光束经透镜组8扩束入射到所述的第一二向色镜9，经该第一二向色镜9反射后，依次经过第二二向色镜12、第三二向色镜14透射后入射到所述的第三光纤耦合器15，依次经第三光纤耦合器15和平方率渐变光纤16后，照射在样品上；
所述的LED光源10发出的光束经透镜11扩束后入射到所述的第二二向色镜12，经该第二二向色镜12反射后，依次经第三二向色镜14和第三光纤耦合器15后射入平方率渐变光纤16后，照射在样品上，经样品反射后沿原光路返回，依次经所述的平方率渐变光纤16、第三光纤耦合器15和第三二向色镜14后，入射到所述的第二二向色镜12，依次经第二二向色镜12和第一二向色镜9透射后，入射到所述的第 二透镜18，经该第二透镜18聚焦后射入CMOS相机19，经该CMOS相机19成像；
所述的自动聚焦模块13发出的偏心光束，经第三二向色镜14反射后，通过光纤耦合器15进入平方率渐变光纤16，照射在样品上，经样品反射后沿原光路返回，依次经所述的平方率渐变光纤16和第三光纤耦合器15入射到第三二向色镜14后，依次经第三二向色镜14、第二二向色镜12和第一二向色镜9透射后，入射到所述的第二透镜18，经该第二透镜18聚焦后射入CMOS相机19，经该CMOS相机19成像；
所述的控制系统20分别与所述的连续激光器1、第二连续激光器4、LED光源(10)、自动聚焦模块13和纳米位移台17的控制端相连，所述的控制系统20与CMOS相机19的输出端相连。
所述的透镜组8由一对正负透镜组成，对光束进行扩束。
所述的样品为由上至下依次由光刻胶材料和基底组成。
所述的光刻胶材料为光致聚合材料以及相应的光引发剂和抑制剂。
所述的光致聚合材料为季戊四醇五丙烯酸酯、双季戊四醇五丙烯酸酯或三乙二醇二甲基丙烯酸酯，所述的光引发剂为米氏酮、樟脑醌或4-二甲基氨基苯甲酸乙酯，所述的抑制剂为二硫化四乙基秋兰姆。
不同光刻胶材料所选用的光引发剂、光抑制剂不同，所采用的第一连续激光器1、第二连续激光器4的参数也有所不同。
图2为光刻胶以及光引发剂和光抑制剂的吸收光谱图，由图可以看出，光刻胶在300nm-800nm处无吸收峰，光引发剂的吸收峰位于460nm，光抑制剂的吸收峰位于350nm，光引发剂通过吸收460nm激光能量使得引发剂化学键发生断裂并诱导光刻胶单体发生聚合反应，光抑制剂通过吸收350nm激光能量使得抑制剂化学键断裂，通过和光刻胶化学键的结合，抑制光刻胶单体自身发生聚合，因此，应用于此特征，可以采用中心激光诱导，外围空心光抑制的方式实现刻写。即第一连续激光器波长选择460nm，第二连续激光器波长选择350nm。
图3为本发明实施例集成化超分辨激光直写装置的直写方法步骤示意图，该方法由实施例1详细说明。
实施例1：
以一种光刻胶三乙二醇二甲基丙烯酸酯为参考，该光刻胶在300nm至800nm处无吸收峰，光引发剂樟脑醌的吸收峰为460nm，光抑制剂二硫化四乙基秋兰姆的吸收峰为350nm，即设计第一连续激光器的波长为460nm，第二连续激光器的吸收波长为350nm。
1)对样品进行预处理：在光致聚合材料中加入一定量的光引发剂和光抑制剂混合均匀；
2)将样品置于所述的纳米位移台17上，控制系统20输出指令，使得自动聚焦模块13的激光器打开，出射光经光路照射在样品上，经样品反射的光束聚焦在CMOS相机19，利用计算机201的离焦判断模块实现自动聚焦；
3)控制系统20控制纳米位移台17移动，使样品平面待刻写区域移动至初始记录点，控制系统20控制开启350nm激光器4，输出的激光通过第二光纤耦合器5、第一环形光子晶体光纤6形成涡旋光，激发样品平面的记录点区域涡旋光中心d/2范围外的二硫化四乙基秋兰姆，使其化学键断裂，抑制三乙二醇二甲基丙烯酸酯的聚合反应；控制系统20控制开启460nm连续激光器1，输出的光经第一光纤耦合器2、单模光纤3形成中心诱导光，诱导记录点区域涡旋光中心d/2范围内的樟脑醌，并诱导三乙二醇二甲基丙烯酸酯发生聚合反应；刻写时间满足400ms-700ms后，进入步骤4)；
4)控制系统20控制关闭所述的350nm激光器1和460nm激光器4，并控制纳米位移台17移动，使样品平面待刻写区域移动至下一记录点，刻写时间满足400ms-700ms；直至样品平面待刻写区域的所有点刻写完成。
8、利用权利要求7所述的集成化超分辨激光直写装置的激光直写方法，其特征在于，在所述的步骤2)-3)还包括样品形貌判断步骤，具体是控制系统20输出指令，使得LED光源10打开，出射光经光路照射在样品上，经样品反射的光束聚焦在CMOS相机19成像，在计算机20上的相应软件上观测样品形貌，当样品形貌不符合要求时，返回步骤1)，否则进入步骤3)。

Claims (8)

  1. 一种集成化超分辨激光直写装置，其特征在于，包括连续激光器(1)、第一光纤耦合器(2)、单模光纤(3)、第二连续激光器(4)、第二光纤耦合器(5)、第一环形光子晶体光纤(6)、分叉光纤(7)、透镜组(8)、第一二向色镜(9)、LED光源(10)、透镜(11)、第二二向色镜(12)、自动聚焦模块(13)、第三二向色镜(14)、第三光纤耦合器(15)、平方率渐变光纤(16)、供样品放置的纳米位移台(17)、第二透镜(18)、CMOS相机(19)和控制系统(20)；
    所述的连续激光器(1)输出的激光经第一光纤耦合器(2)输入单模光纤(3)，作为中心诱导光；第二连续激光器(4)输出的激光经第二光纤耦合器(5)输入第一环形光子晶体光纤(6)，作为外围涡旋抑制光；所述的外围涡旋抑制光与中心诱导光经分叉光纤(7)合束后经所述的光束经透镜组(8)扩束入射到所述的第一二向色镜(9)，经该第一二向色镜(9)反射后，依次经过第二二向色镜(12)、第三二向色镜(14)透射后入射到所述的第三光纤耦合器(15)，依次经第三光纤耦合器(15)和平方率渐变光纤(16)后，照射在样品上；
    所述的LED光源(10)发出的光束经透镜(11)扩束后入射到所述的第二二向色镜(12)，经该第二二向色镜(12)反射后，依次经第三二向色镜(14)和第三光纤耦合器(15)后射入平方率渐变光纤(16)后，照射在样品上，经样品反射后沿原光路返回，依次经所述的平方率渐变光纤(16)、第三光纤耦合器(15)和第三二向色镜(14)后，入射到所述的第二二向色镜(12)，依次经第二二向色镜(12)和第一二向色镜(9)透射后，入射到所述的第二透镜(18)，经该第二透镜(18)聚焦后射入CMOS相机(19)，经该CMOS相机(19)成像；
    所述的自动聚焦模块(13)发出的偏心光束，经第三二向色镜(14)反射后，通过光纤耦合器(15)进入平方率渐变光纤(16)，照射在样品上，经样品反射后沿原光路返回，依次经所述的平方率渐变光纤(16)和第三光纤耦合器(15)入射到第三二向色镜(14)后，依次经第三二向色镜(14)、第二二向色镜(12)和第一二向色镜(9)透射后，入射到所述的第二透镜(18)，经该第二透镜(18)聚焦后射入CMOS相机(19)，经该CMOS相机(19)成像；
    所述的控制系统(20)分别与所述的连续激光器(1)、第二连续激光器(4)、LED光源(10)、自动聚焦模块(13)和纳米位移台(17)的控制端相连，所述的控制系统(20)与CMOS相机(19)的输出端相连。
  2. 根据权利要求1所述的集成化超分辨激光直写装置，其特征在于，控制系统(20)由计算机(201)和FPGA(202)组成。
  3. 根据权利要求1或2所述的集成化超分辨激光直写装置，其特征在于，所述的透镜组(8)由一对正负透镜组成，对光束进行扩束。
  4. 根据权利要求1或2所述的集成化超分辨激光直写装置，其特征在于，所述的样品为由上至下依次由光刻胶材料和基底组成。
  5. 根据权利要求4所述的集成化超分辨激光直写装置，其特征在于，所述的光刻胶材料为光致聚合材料以及相应的光引发剂和抑制剂。
  6. 根据权利要求5所述的集成化超分辨激光直写装置，其特征在于，所述的光致聚合材料为季戊四醇五丙烯酸酯、双季戊四醇五丙烯酸酯或三乙二醇二甲基丙烯酸酯，所述的光引发剂为米氏酮、樟脑醌或4-二甲基氨基苯甲酸乙酯，所述的抑制剂为二硫化四乙基秋兰姆。
  7. 利用权利要求1-6任一所述的集成化超分辨激光直写装置的激光直写方法，其特征在于，该方法包括以下步骤：
    1)对样品进行预处理：在光致聚合材料中加入一定量的光引发剂和光抑制剂混合均匀；
    2)将样品置于所述的纳米位移台(17)上，控制系统(20)输出指令，使得自动聚焦模块(13)的激光器打开，出射光经光路照射在样品上，经样品反射的光束聚焦在CMOS相机(19)，利用计算机(201)的离焦判断模块实现自动聚焦；
    3)控制系统(20)控制纳米位移台(17)移动，使样品平面刻写区域移动至初始记录点，控制系统(20)控制开启第二连续激光器(4)，输出的激光通过第二光纤耦合器(5)、第一环形光子晶体光纤(6)形成涡旋光，激发样品平面的记录点区域涡旋光中心d/2范围外的光抑制剂，抑制光致聚合材料发生聚合；控制系统(20)控制开启连续激光器(1)，输出的激光经第一光纤耦合器(2)、单模光纤(3)形成中心诱导光，诱导记录点区域涡旋光中心d/2范围内的光引发剂，引发光致聚合材料发生聚合；刻写时间满足400ms-700ms后，进入步骤4)；
    4)控制系统(20)控制关闭所述的连续激光器(1)和第二连续激光器(4)，并控制纳米位移台(17)移动，使样品平面待刻写区域移动至下一记录点，刻写时间满足400ms-700ms；直至样品平面待刻写区域的所有点刻写完成。
  8. 利用权利要求7所述的集成化超分辨激光直写装置的激光直写方法，其特征在于，在所述的步骤2)-3)还包括样品形貌判断步骤，具体是控制系统(20)输出指令，使得LED光源(10)打开，出射光经光路照射在样品上，经样品反射的光束聚焦在CMOS相机(19)成像，在计算机(20)上的相应软件上观测样品形貌，当样品形貌不符合要求时，返回步骤1)，否则进入步骤3)。
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CN108899053A (zh) * 2018-04-09 2018-11-27 中国科学院上海光学精密机械研究所 双光束超分辨光存储材料读写装置和读写方法

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