WO2020111007A8 - Laminate, organic semiconductor device, methods for manufacturing laminate and organic semiconductor device, composition, and composition kit - Google Patents

Laminate, organic semiconductor device, methods for manufacturing laminate and organic semiconductor device, composition, and composition kit Download PDF

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Publication number
WO2020111007A8
WO2020111007A8 PCT/JP2019/046010 JP2019046010W WO2020111007A8 WO 2020111007 A8 WO2020111007 A8 WO 2020111007A8 JP 2019046010 W JP2019046010 W JP 2019046010W WO 2020111007 A8 WO2020111007 A8 WO 2020111007A8
Authority
WO
WIPO (PCT)
Prior art keywords
laminate
semiconductor device
organic semiconductor
composition
layer
Prior art date
Application number
PCT/JP2019/046010
Other languages
French (fr)
Japanese (ja)
Other versions
WO2020111007A1 (en
Inventor
崇 後藤
中村　敦
トゥン フェイ ケ
セドリック ロラン
Original Assignee
富士フイルム株式会社
アイメック・ヴェーゼットウェー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士フイルム株式会社, アイメック・ヴェーゼットウェー filed Critical 富士フイルム株式会社
Publication of WO2020111007A1 publication Critical patent/WO2020111007A1/en
Publication of WO2020111007A8 publication Critical patent/WO2020111007A8/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Laminated Bodies (AREA)

Abstract

A laminate having, in the sequence listed, a substrate, an organic layer, an electroconductive layer, a protective layer for protecting the surface of the electroconductive layer, and a photosensitive layer. The electroconductive layer is in contact with the organic layer and subjected to wet etching. The photosensitive layer includes a material in which the dissolution rate of the photosensitive layer in a developer solution changes due to the action of light and/or radiation. The present invention also pertains to a method for manufacturing the laminate. The present invention also pertains to an organic semiconductor device having the laminate, and a method for manufacturing the organic semiconductor device. The present invention also pertains to a composition used to form the laminate, and a kit including the composition.
PCT/JP2019/046010 2018-11-30 2019-11-25 Laminate, organic semiconductor device, methods for manufacturing laminate and organic semiconductor device, composition, and composition kit WO2020111007A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-225226 2018-11-30
JP2018225226A JP2022028980A (en) 2018-11-30 2018-11-30 Laminate, organic semiconductor device and method for manufacturing the same, and composition and kit of composition

Publications (2)

Publication Number Publication Date
WO2020111007A1 WO2020111007A1 (en) 2020-06-04
WO2020111007A8 true WO2020111007A8 (en) 2020-07-30

Family

ID=70852246

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/046010 WO2020111007A1 (en) 2018-11-30 2019-11-25 Laminate, organic semiconductor device, methods for manufacturing laminate and organic semiconductor device, composition, and composition kit

Country Status (3)

Country Link
JP (1) JP2022028980A (en)
TW (1) TW202039250A (en)
WO (1) WO2020111007A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023045882A (en) 2021-09-22 2023-04-03 キオクシア株式会社 Semiconductor device and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261408A (en) * 2005-03-17 2006-09-28 Ricoh Co Ltd Semiconductor apparatus and image display device employing it
JP5429454B2 (en) * 2009-04-17 2014-02-26 ソニー株式会社 Thin film transistor manufacturing method and thin film transistor
JP2011254091A (en) * 2011-07-25 2011-12-15 Sony Corp Organic semiconductor device and method of manufacturing the same
JP6355374B2 (en) * 2013-03-22 2018-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
TW202039250A (en) 2020-11-01
WO2020111007A1 (en) 2020-06-04
JP2022028980A (en) 2022-02-17

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