Classifications

• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07D—HETEROCYCLIC COMPOUNDS
  • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
  • C07D495/22—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/649—Aromatic compounds comprising a hetero atom
  • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
  • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07D—HETEROCYCLIC COMPOUNDS
  • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
  • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
  • C07D495/04—Ortho-condensed systems
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
  • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
  • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
  • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
  • G01N21/64—Fluorescence; Phosphorescence
  • G01N21/645—Specially adapted constructive features of fluorimeters
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/649—Aromatic compounds comprising a hetero atom
  • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
  • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
  • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/10—Deposition of organic active material
  • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
  • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
  • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
  • H10K71/441—Thermal treatment, e.g. annealing in the presence of a solvent vapour in the presence of solvent vapors, e.g. solvent vapour annealing
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
  • H10K85/211—Fullerenes, e.g. C60
  • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
  • Y02E10/00—Energy generation through renewable energy sources
  • Y02E10/50—Photovoltaic [PV] energy
  • Y02E10/549—Organic PV cells

Definitions

• Embodiments of the present disclosure relate to photoactive compounds and their use in organic electronic devices, in particular organic photodetectors.
• organic electronic devices comprising organic semiconductor materials are known, including organic light-emitting devices, organic field effect transistors, organic photovoltaic devices and organic photodetectors (OPDs).
• OPDs organic photodetectors
• WO 2018/065352 discloses an OPD having a photoactive layer that contains a small molecule acceptor which does not contain a fullerene moiety and a conjugated copolymer electron donor having donor and acceptor units.
• WO 2018/065356 discloses an OPD having a photoactive layer that contains a small molecule acceptor which does not contain a fullerene moiety and a conjugated copolymer electron donor having randomly distributed donor and acceptor units.
• Embodiments of the present disclosure provide a compound of formula (I):
• EDG is an electron-donating group comprising a polycyclic hetero aromatic group and each EAG is an electron- accepting group of formula (II):
• R 10 in each occurrence is H or a substituent
• each X'-X 4 is independently CR 11 or N wherein R 11 in each occurrence is H or a substituent, with the proviso that at least one occurrence of at least one of X '-X 4 is N.
• compounds of formula (I) may be capable of absorbing light at long wavelengths, e.g. greater than 750 nm, optionally greater than
• composition containing an electron- accepting (n-type) compound as described herein and an electron donor (p- type) compound.
• there formulation comprising a composition as described herein dissolved or dispersed in one or more solvents.
• an organic photodetector having: an anode; a cathode; and a photosensitive organic layer disposed between the anode and cathode wherein the photosensitive organic layer contains a donor compound and an acceptor compound of formula (I).
• an organic photodetector as described herein comprising formation of the photosensitive organic layer over one of the anode and cathode and formation of the other of the anode and cathode over the photosensitive organic layer.
• a circuit comprising an organic photodetector as described herein, and at least one of a voltage source for applying a reverse bias to the organic photodetector and a device configured to measure photocurrent generated by the photodetector.
• a photosensor comprising a light source and an organic photodetector as described herein configured to detect light emitted from the light source.
• a method of determining the presence and / or concentration of a target material in a sample comprising illuminating the sample and measuring a response of an organic photodetector as described herein which is configured to receive light emitted from the sample upon illumination.
• FIG. 1 illustrates an organic photodetector according to some embodiments.
• Figure 2 illustrates absorption spectra for a compound according to some embodiments of the present disclosure and a comparative compound.
• the words “comprise,” “comprising,” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of "including, but not limited to.”
• the terms “connected,” “coupled,” or any variant thereof means any connection or coupling, either direct or indirect, between two or more elements; the coupling or connection between the elements can be physical, logical, electromagnetic, or a combination thereof.
• the words “herein,” “above,” “below,” and words of similar import when used in this application, refer to this application as a whole and not to any particular portions of this application.
• words in the Detailed Description using the singular or plural number may also include the plural or singular number respectively.
• the word "or,” in reference to a list of two or more items, covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.
• FIG. 1 illustrates an OPD according to some embodiments of the present disclosure.
• the OPD comprises a cathode 103, an anode 107 and a bulk heterojunction layer 105 disposed between the anode and the cathode.
• the OPD may be supported on a substrate 101, optionally a glass or plastic substrate.
• Figure 1 illustrates an arrangement in which the cathode is disposed between the substrate and the anode.
• the anode may be disposed between the cathode and the substrate.
• the bulk heterojunction layer comprises a mixture of an electron acceptor and an electron donor.
• the bulk heterojunction layer consists of the electron acceptor and the electron donor.
• Each of the anode and cathode may independently be a single conductive layer or may comprise a plurality of layers.
• the OPD may comprise layers other than the anode, cathode and bulk shown in Figure 1.
• a hole-transporting layer is disposed between the anode and the bulk heterojunction layer.
• an electron-transporting layer is disposed between the cathode and the bulk heterojunction layer.
• a work function modification layer is disposed between the bulk heterojunction layer and the anode, and / or between the bulk heterojunction layer and the cathode.
• the photodetectors as described in this disclosure may be connected to a voltage source for applying a reverse bias to the device and / or a device configured to measure photocurrent.
• the voltage applied to the photodetectors may be variable.
• the photodetector may be continuously biased when in use.
• a photodetector system comprises a plurality of photodetectors as described herein, such as an image sensor of a camera.
• a sensor may comprise an OPD as described herein and a light source wherein the OPD is configured to receive light emitted from the light source.
• the light from the light source may or may not be changed before reaching the OPD.
• the light may be filtered, down-converted or up- converted before it reaches the OPD.
• the light source has a peak wavelength of greater than 750 nm, optionally greater than 900 nm, optionally less than 1500 nm.
• the bulk heterojunction layer may contain an electron acceptor (n-type) compound of formula (I):
• EAG - EDG - EAG (I) wherein EDG is an electron-donating group comprising a polycyclic hetero aromatic group and each EAG is an electron- accepting group of formula (II):
• R 10 in each occurrence is H or a substituent
• each X'-X 4 is independently CR 11 or N wherein R 11 in each occurrence is H or a substituent, with the proviso that at least one occurrence of at least one of X '-X 4 is N.
• each X 3 is N.
• each X 1 , X 2 and X 4 is CR 11 .
• each R 11 is independently selected from H and C ⁇ .n alkyl.
• Each EAG of formula (II) has a LUMO level that is deeper (i.e. further from vacuum) than that of EDG, preferably at least 1 eV deeper.
• the LUMO levels of EAG and EDG may be as determined by modelling the LUMO level of EAG-H and that of H-EDG-H, i.e. by replacing the bonds between EAG and EDG with bonds to a hydrogen atom. Modelling may be performed using Gaussian09 software available from Gaussian using Gaussian09 with B3LYP (functional) and LACVP* (Basis set).
• EDG comprises a fused heteroaromatic group containing at least one fused thiophene.
• the fused heteroaromatic group comprises or consists of fused thiophene and one or both of benzene and cyclopentadiene groups, each of which may independently be unsubstituted or substituted with one or more substituents.
• Each thiophene is optionally unsubstitued or substituted with one or more groups R 4 other than H.
• Each benzene is optionally unsubstituted or substituted with one or more groups R other than H.
• Each cyclopentadiene is optionally unsubstituted or substituted with one or more R 1 groups.
• R 1 , R 3 and R 4 are as described below with reference to Formula (la).
• EDG is selected from:
• Ar is furan, thiophene or benzene which is unsubstituted or substituted with one or more substituents; each Y is independently O or S; each A is independently O, S or CR 1 R2 wherein R 1 and R2 independently in each occurrence is a substituent; each R 4 -R 9 is independently H or a substituent; p is 0, 1, 2 or 3; q is 0, 1, 2 or 3;
• Z 1 is a direct bond or, together with R 4 or R 5 , forms an aromatic or heteroaromatic group Ar 1 ;
• Z is a direct bond or, together with R or R , forms an aromatic or heteroaromatic group Ar 2 ;
• Z 3 is a direct bond or, together with R 6 , forms an aromatic or heteroaromatic group Ar 3 ; and Z 4 is a direct bond or, together with R 9 , forms an aromatic or heteroaromatic group Ar 4 .
• each Z 1 - Z 4 is a direct bond.
• each Ar'-Ar 4 (where present) is preferably a thiophene.
• Ar'-Ar 4 are each independently unsubstituted or substituted with one or more substituents.
• substituents of Ar'-Ar 4 are selected from C ⁇ . ⁇ 2 alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced with O, S, COO or CO.
• the compound of formula (I) has formula (lb):
• the compound of formula (I) has formula (Ic): wherein R 13 in each occurrence is independently H or a substituent, optionally H or Ci- 12 alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced with O, S, COO or CO.
• R and R of formula (la), (lb) or (Ic) independently in each occurrence are selected from the group consisting of: linear, branched or cyclic Ci_ 2 o alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced by O, S, NR 12 , CO or COO wherein R 12 is a Ci_i 2 hydrocarbyl and one or more H atoms of the Ci- 20 alkyl may be replaced with F; and a group of formula (Ak)u-(Ar 6 )v wherein Ak is a Ci- 12 alkylene chain in which one or more C atoms may be replaced with O, S, CO or COO; u is 0 or 1; Ar 6 in each occurrence is independently an aromatic or hetero aromatic group which is unsubstituted or substituted with one or more substituents; and v is at least 1, optionally 1, 2 or 3.
• Ar 6 is preferably phenyl.
• substituents of Ar 6 may be a substituent R 14 wherein R 14 in each occurrence is independently selected from Ci_ 2 o alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced by O, S, NR 12 , CO or COO and one or more H atoms of the Ci_ 2 o alkyl may be replaced with F.
• a hydrocarbyl group as described anywhere herein is optionally selected from Ci_ 2 o alkyl; unsubstituted phenyl; and phenyl substituted with one or more Ci- 12 alkyl groups. If v is 3 or more then -(Ar 6 )v may be a linear or branched chain of Ar 6 groups.
• a linear chain of Ar 6 groups as described herein has only on monovalent terminal Ar 6 group whereas a branched chain of Ar 6 groups has at least two monovalent terminal Ar 6 groups.
• R 1 and R2 in each occurrence is phenyl which is unsubstituted or substituted with one or more substituents selected from R 14 as described above.
• each R 4 -R 9 of formula (la) or (lb) is independently selected from:
• Ci- 12 alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced with O, S, COO or CO; and an aromatic or heteroaromatic group Ar 5 which is unsubstituted or substituted with one or more substituents.
• each R of formula (lb) independently in each occurrence is selected from: H; Ci- 12 alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced with O, S, COO or CO; and an aromatic or heteroaromatic group Ar 5 which is unsubstituted or substituted with one or more substituents.
• Ar 5 is preferably an aromatic group, more preferably phenyl.
• the one or more substituents of Ar 5 may be selected from Ci- 12 alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced with O, S, COO or CO.
• each R -R is H; Ci- 20 alkyl; or Ci- 20 alkoxy. In some embodiments at least one of, optionally both of, R 5 and R 8 is not H, and each R 3 , R 4 and R 6 -R 10 is H.
• non-terminal C atom of an alkyl group as used herein is meant a C atom of the alkyl other than the methyl C atom of a linear (n-alkyl) chain or the methyl C atoms of a branched alkyl chain.
• exemplary compounds of formula (I) are:
• the compound of formula (I) may be used in combination with a fullerene acceptor.
• the compound of formula (I) : fullerene acceptor weight ratio may be in the range of about 1 : 0.1 - 1 : 1, preferably in the range of about 1 : 0.1 - 1 : 0.5.
• the fullerene may be a C6o, C70, C76, C78 or Cg4 fullerene or a derivative thereof including, without limitation, PCBM-type fullerene derivatives (including phenyI-C61- butyrie acid methyl ester (CsoPCBM) and phenyl-C71 -butyric acid methyl ester (C 70 PCBM)), TCBM-type fullerene derivatives (e.g. tolyl-C61 -butyric acid methyl ester (C60TCBM)), and ThCBM-type fullerene derivatives (e.g. thienyl-C61 -butyric acid methyl ester (CeoThCBM)
• a fullerene acceptor may have formula (III):
• A together with the C-C group of the fullerene, forms a monocyclic or fused ring group which may be unsubstituted or substituted with one or more substituents.
• R 20 -R 32 are each independently H or a substituent.
• Substituents R -R are optionally and independently in each occurrence selected from the group consisting of aryl or heteroaryl, optionally phenyl, which may be
• aryl or heteroaryl groups R -R are optionally selected from C M 2 alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced with O, S, CO or COO and one or more H atoms may be replaced with F.
• the donor (p-type) compound is not particularly limited and may be appropriately selected from electron donating materials that are known to the person skilled in the art, including organic polymers and non-polymeric organic molecules.
• the p-type compound has a HOMO deeper (further from vacuum) than a LUMO of the compound of formula (I).
• the gap between the HOMO level of the p-type donor and the LUMO level of the n-type acceptor compound of formula (I) is less than 1.4 eV.
• the p-type donor compound is an organic conjugated polymer, which can be a homopolymer or copolymer including alternating, random or block copolymers. Preferred are non-crystalline or semi- crystalline conjugated organic polymers.
• the p-type organic semiconductor is a conjugated organic polymer with a low bandgap, typically between 2.5 eV and 1.5 eV, preferably between 2.3 eV and 1.8 eV.
• the p-type donor has a HOMO level no more than 5.5 eV from vacuum level.
• the p-type donor has a HOMO level at least 4.1 eV from vacuum level.
• polymers selected from conjugated hydrocarbon or heterocyclic polymers including polyacene, polyaniline, polyazulene,
• polytriarylamine poly(phenylene vinylene), poly(3-substituted thiophene), poly(3,4- bisubstituted thiophene), polyselenophene, poly(3-substituted selenophene), poly(3,4- bisubstituted selenophene), poly(bisthiophene), poly(terthiophene),
• Preferred examples of p-type donors are copolymers of polyfluorenes and polythiophenes, each of which may be substituted, and polymers comprising
• the p-type donor may also consist of a mixture of a plurality of electron donating materials.
• the donor polymer comprises a repeat unit of formula (IV):
• R 50 and R 51 independently in each occurrence is H or a substituent.
• R 50 and R 51 may be selected from groups other than H described with respect to R 4 and R 7.
• each R 50 is a substituent.
• the R 50 groups are linked to form a group of formula -Z ⁇ CCR 52 ⁇ - wherein Z 1 is O, NR 53 , or C(R 52 )2;
• R 52 in each occurrence is H or a substituent, preferably a substituent as described with reference to R , most preferably a Ci_3ohydrocarbyl group; and R is a substituent, preferably a Ci_3ohydrocarbyl group.
• each R 51 is H.
• the donor polymer comprises a repeat unit of formula (V): wherein R 54 in each occurrence is independently H or a substituent.
• substituents R 54 are selected from the group consisting of F, CN, NO2, and Ci-20 alkyl wherein one or more non-adjacent, non-terminal C atoms may be replaced with O, S, CO or COO and one or more H atoms may be replaced with F.
• the weight of the donor compound to the acceptor compound is from about 1:0.5 to about 1:2.
• the weight ratio of the donor compound to the acceptor compound is about 1:1 or about 1:1.5.
• At least one of the first and second electrodes is transparent so that light incident on the device may reach the bulk heterojunction layer. In some embodiments, both of the first and second electrodes are transparent.
• Each transparent electrode preferably has a transmittance of at least 70 %, optionally at least 80 %, to wavelengths in the range of 300-900 nm.
• one electrode is transparent and the other electrode is reflective.
• the transparent electrode comprises or consists of a layer of transparent conducting oxide, preferably indium tin oxide or indium zinc oxide.
• the electrode may comprise poly 3,4-ethylenedioxythiophene (PEDOT).
• the electrode may comprise a mixture of PEDOT and polystyrene sulfonate (PSS).
• PSS polystyrene sulfonate
• the electrode may consist of a layer of PEDOT:PSS.
• the reflective electrode may comprise a layer of a reflective metal.
• the layer of reflective material may be aluminium or silver or gold.
• a bi-layer electrode may be used.
• the electrode may be an indium tin oxide (ITO)/silver bi-layer, an ITO/aluminium bi-layer or an ITO/gold bi-layer.
• the device may be formed by forming the bulk heterojunction layer over one of the anode and cathode supported by a substrate and depositing the other of the anode or cathode over the bulk heterojunction layer.
• the area of the OPD may be less than about 3 cm , less than about 2 cm , less than about 1 cm 2 , less than about 0.75 cm 2 , less than about 0.5 cm 2 or less than about
• the substrate may be, without limitation, a glass or plastic substrate.
• the substrate can be described as an inorganic semiconductor.
• the substrate may be silicon.
• the substrate can be a wafer of silicon.
• the substrate is transparent if, in use, incident light is to be transmitted through the substrate and the electrode supported by the substrate.
• the substrate supporting one of the anode and cathode may or may not be transparent if, in use, incident light is to be transmitted through the other of the anode and cathode.
• the bulk heterojunction layer may be formed by any process including, without limitation, thermal evaporation and solution deposition methods.
• the bulk heterojunction layer is formed by depositing a formulation comprising the acceptor material and the electron donor material dissolved or dispersed in a solvent or a mixture of two or more solvents.
• the formulation may be deposited by any coating or printing method including, without limitation, spin-coating, dip-coating, roll-coating, spray coating, doctor blade coating, wire bar coating, slit coating, ink jet printing, screen printing, gravure printing and flexographic printing.
• the one or more solvents of the formulation may optionally comprise or consist of benzene substituted with one or more substituents selected from chlorine, C MO alkyl and C MO alkoxy wherein two or more substituents may be linked to form a ring which may be unsubstituted or substituted with one or more Ci_ 6 alkyl groups, optionally toluene, xylenes, trimethylbenzenes, tetramethylbenzenes, anisole, indane and its alkyl- substituted derivatives, and tetralin and its alkyl-substituted derivatives.
• substituents selected from chlorine, C MO alkyl and C MO alkoxy wherein two or more substituents may be linked to form a ring which may be unsubstituted or substituted with one or more Ci_ 6 alkyl groups, optionally toluene, xylenes, trimethylbenzenes, tetramethylbenzenes, anisole, indane and its al
• the formulation may comprise a mixture of two or more solvents, preferably a mixture comprising at least one benzene substituted with one or more substituents as described above and one or more further solvents.
• the one or more further solvents may be selected from esters, optionally alkyl or aryl esters of alkyl or aryl carboxylic acids, optionally a C MO alkyl benzoate, benzyl benzoate or dimethoxybenzene.
• a mixture of trimethylbenzene and benzyl benzoate is used as the solvent.
• a mixture of trimethylbenzene and dimethoxybenzene is used as the solvent.
• the formulation may comprise further components in addition to the electron acceptor, the electron donor and the one or more solvents.
• adhesive agents, defoaming agents, deaerators, viscosity enhancers, diluents, auxiliaries, flow improvers colourants, dyes or pigments, sensitizers, stabilizers, nanoparticles, surface-active compounds, lubricating agents, wetting agents, dispersing agents and inhibitors may be mentioned.
• the organic photodetector as described herein may be used in a wide range of applications including, without limitation, detecting the presence and / or brightness of ambient light and in a sensor comprising the organic photodetector and a light source.
• the photodetector may be configured such that light emitted from the light source is incident on the photodetector and changes in wavelength and / or brightness of the light may be detected, e.g. due to absorption by and / or emission of light from a target material in a sample disposed in a light path between the light source and the organic photodetector.
• the sensor may be, without limitation, a gas sensor, a biosensor, an X- ray imaging device, an image sensor such as a camera image sensor, a motion sensor (for example for use in security applications) a proximity sensor or a fingerprint sensor.
• a ID or 2D photosensor array may comprise a plurality of photodetectors as described herein in an image sensor.
• the photodetector may be configured to detect light emitted from a target analyte which emits light upon irradiation by the light source or which is bound to a luminescent tag which emits light upon irradiation by the light source.
• the photodetector may be configured to detect a wavelength of light emitted by the target analyte or a luminescent tag bound thereto.
• An electron-acceptor group precursor (mixture of isomers) was prepared according to the following reaction scheme:
• Step 4 The thiophene core (400 mg, 288 pmol) and stage 3 material (562 mg, 115 pmol) were dissolved in chloroform under nitrogen atmosphere. Pyridine (5 mL) was added and the reaction was stirred at 65 °C for 65 h. After cooling the solvents were removed and the crude residue was purified by column chromatography on silica eluting with 2% methanol in chloroform. The product-containing fractions were concentrated and triturated with acetonitrile for 3 h. After filtration the solid was precipitated from
• Model Compound Examples 1 and 2 have a LUMO which is deeper (i.e. further from vacuum level) and a similar or smaller band gap than Model Comparative Compounds 1-3.
• Absorption Figure 2 shows absorption spectra for Compound Example 1 and comparative compound IEICO-4F.
• Compound Example 1 has a significantly longer peak wavelength (786 nm) than IEICO-4F (762 nm).
• HOMO and LUMO levels of films of Compound Example 1 and comparative compound IEICO-4F were determined by square wave voltammetry (SWV) and the results are set out in Table 2.
• the LUMO level of Compound Example 1 is deeper and its HOMO-LUMO gap is smaller as compared to comparative compound IEICO-4F having a structure of
• the HOMO and LUMO energy levels of compounds reported herein were determined from films of the compounds using SWV at room temperature.
• SWV the current at a working electrode is measured while the potential between the working electrode and a reference electrode is swept linearly in time.
• the difference current between a forward and reverse pulse is plotted as a function of potential to yield a voltammogram.
• the apparatus to measure HOMO or LUMO energy levels by SWV may comprise a cell containing tertiary butyl ammonium perchlorate or tertiary butyl ammonium
• Ferrocene is added directly to the existing cell at the end of the experiment for calculation purposes where the potentials are determined for the oxidation and reduction of ferrocene versus Ag/AgCI using cyclic voltammetry (CV).
• Apparatus CHI 660D Potentiostat.
• the sample is dissolved in toluene (3mg/ml) and spun at 3000 rpm directly on to the glassy carbon working electrode.
• LUMO 4.8-E ferrocene (peak to peak average) - E reduction of sample (peak maximum).
• HOMO 4.8-E ferrocene (peak to peak average) + E oxidation of sample (peak maximum).

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  • 2019-11-29 WO PCT/GB2019/053390 patent/WO2020109821A1/en not_active Ceased
  • 2019-11-29 US US17/297,997 patent/US12256638B2/en active Active
  • 2019-11-29 JP JP2021530113A patent/JP7474762B2/ja active Active

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