WO2020109361A3 - Gaseinlassvorrichtung für einen cvd-reaktor - Google Patents

Gaseinlassvorrichtung für einen cvd-reaktor Download PDF

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Publication number
WO2020109361A3
WO2020109361A3 PCT/EP2019/082679 EP2019082679W WO2020109361A3 WO 2020109361 A3 WO2020109361 A3 WO 2020109361A3 EP 2019082679 W EP2019082679 W EP 2019082679W WO 2020109361 A3 WO2020109361 A3 WO 2020109361A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
gas distribution
gas inlet
inlet device
cvd reactor
Prior art date
Application number
PCT/EP2019/082679
Other languages
English (en)
French (fr)
Other versions
WO2020109361A2 (de
Inventor
Marcel Kollberg
Francisco Ruda Y Witt
Merim Mukinovic
Mike PFISTERER
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Priority to CN201980089790.6A priority Critical patent/CN113330142A/zh
Priority to JP2021530047A priority patent/JP7461351B2/ja
Priority to KR1020217019341A priority patent/KR20210094019A/ko
Priority to EP19816554.0A priority patent/EP3887569A2/de
Publication of WO2020109361A2 publication Critical patent/WO2020109361A2/de
Publication of WO2020109361A3 publication Critical patent/WO2020109361A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

Die Erfindung betrifft eine Gaseinlassvorrichtung für einen CVD-Reaktor (1) mit einem an einem Gaszuleitungen (5) aufweisenden Befestigungsabschnitt (3) befestigbaren Gaseinlassorgan mit mehreren übereinander angeordneten Gasverteilniveaus, die jeweils eine Gasverteilwand (6) mit Gasaustrittsöffnungen (7) aufweisen, die mit einer von der Gasverteilwand (6) umgebenen Gasverteilkammern (8) strömungsverbunden sind, wobei in die Gasverteilkammer (8) jeweils ein Gaseinlasskanal (9.1, 9.2, 9.3, 9.4, 9.5) mit einer Mündung (10) mündet und die Gasverteilkammern (8) verschiedener Gasverteilniveaus durch einen Trennboden (11) voneinander getrennt sind.Erfindungsgemäß befindet sich zwischen der Mündung (10) des Gaseinlasskanals (9.1, 9.2, 9.3, 9.4, 9.5) und der Gasverteilwand (6) eine Strömungsbarriere.Ferner ist vorgesehen, dass die Gaseinlassvorrichtung aus mehreren scheibenförmigen Gasverteilkörpern (4.1, 4.2, 4.3, 4.4) besteht, die übereinander angeordnet sind.
PCT/EP2019/082679 2018-11-28 2019-11-27 Gaseinlassvorrichtung für einen cvd-reaktor WO2020109361A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201980089790.6A CN113330142A (zh) 2018-11-28 2019-11-27 用于cvd-反应器的进气设备
JP2021530047A JP7461351B2 (ja) 2018-11-28 2019-11-27 Ｃｖｄリアクタ用のガス入口装置
KR1020217019341A KR20210094019A (ko) 2018-11-28 2019-11-27 Cvd-반응기용 가스 유입 장치
EP19816554.0A EP3887569A2 (de) 2018-11-28 2019-11-27 Gaseinlassvorrichtung für einen cvd-reaktor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018130139.1A DE102018130139A1 (de) 2018-11-28 2018-11-28 Gaseinlassvorrichtung für einen CVD-Reaktor
DE102018130139.1 2018-11-28

Publications (2)

Publication Number Publication Date
WO2020109361A2 WO2020109361A2 (de) 2020-06-04
WO2020109361A3 true WO2020109361A3 (de) 2020-09-03

Family

ID=68808294

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2019/082679 WO2020109361A2 (de) 2018-11-28 2019-11-27 Gaseinlassvorrichtung für einen cvd-reaktor

Country Status (7)

Country Link
EP (1) EP3887569A2 (de)
JP (1) JP7461351B2 (de)
KR (1) KR20210094019A (de)
CN (1) CN113330142A (de)
DE (1) DE102018130139A1 (de)
TW (1) TW202035777A (de)
WO (1) WO2020109361A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019133023A1 (de) * 2019-12-04 2021-06-10 Aixtron Se Gaseinlassvorrichtung für einen CVD-Reaktor
DE102021103245A1 (de) * 2021-02-11 2022-08-11 Aixtron Se CVD-Reaktor mit einem in einer Vorlaufzone ansteigenden Prozesskammerboden
DE102021103368A1 (de) 2021-02-12 2022-08-18 Aixtron Se CVD-Reaktor mit einem ein Gaseinlassorgan umgebenden Temperrierring
CN115852343A (zh) * 2021-11-24 2023-03-28 无锡先为科技有限公司 一种进气分配机构及具有其的cvd反应设备
CN114318300B (zh) * 2021-12-30 2024-05-10 拓荆科技股份有限公司 一种半导体加工设备及其反应腔室、工艺管路穿腔模块
CN117418218A (zh) * 2023-12-19 2024-01-19 北京北方华创微电子装备有限公司 进气组件、进气装置及半导体工艺腔室

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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DE102008055582A1 (de) * 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
EP2215282A2 (de) * 2007-10-11 2010-08-11 Valence Process Equipment, Inc. Cvd-reaktor
DE102014104218A1 (de) * 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung
DE202017002851U1 (de) * 2017-05-30 2017-06-27 WERRTA GmbH i. G. Düsenkörper, insbesondere für Sprühköpfe von Sprühdosen
DE202017005165U1 (de) * 2017-10-06 2017-10-18 WERRTA GmbH Düsen- und Zerstäubungstechnik Düsenkörper
DE102017100725A1 (de) * 2016-09-09 2018-03-15 Aixtron Se CVD-Reaktor und Verfahren zum Reinigen eines CVD-Reaktors

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DE10029110B4 (de) 1999-06-15 2006-05-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren für die Materialbearbeitung und Verwendung desselben
US6793966B2 (en) * 2001-09-10 2004-09-21 Howmet Research Corporation Chemical vapor deposition apparatus and method
DE10247921A1 (de) * 2002-10-10 2004-04-22 Aixtron Ag Hydrid VPE Reaktor
KR101004822B1 (ko) * 2008-04-18 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
CN102776489B (zh) * 2011-05-09 2014-08-27 北京北方微电子基地设备工艺研究中心有限责任公司 进气环、进气组件、工艺腔装置和cvd设备
DE102011056589A1 (de) * 2011-07-12 2013-01-17 Aixtron Se Gaseinlassorgan eines CVD-Reaktors
DE102013014069B3 (de) 2013-08-22 2014-08-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Laserbearbeitung eines Werkstücks mit polierter Oberfläche und Verwendung dieses Verfahrens
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US5851294A (en) * 1995-10-23 1998-12-22 Watkins-Johnson Company Gas injection system for semiconductor processing
EP2215282A2 (de) * 2007-10-11 2010-08-11 Valence Process Equipment, Inc. Cvd-reaktor
DE102008055582A1 (de) * 2008-12-23 2010-06-24 Aixtron Ag MOCVD-Reaktor mit zylindrischem Gaseinlassorgan
DE102014104218A1 (de) * 2014-03-26 2015-10-01 Aixtron Se CVD-Reaktor mit Vorlaufzonen-Temperaturregelung
DE102017100725A1 (de) * 2016-09-09 2018-03-15 Aixtron Se CVD-Reaktor und Verfahren zum Reinigen eines CVD-Reaktors
DE202017002851U1 (de) * 2017-05-30 2017-06-27 WERRTA GmbH i. G. Düsenkörper, insbesondere für Sprühköpfe von Sprühdosen
DE202017005165U1 (de) * 2017-10-06 2017-10-18 WERRTA GmbH Düsen- und Zerstäubungstechnik Düsenkörper

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Also Published As

Publication number Publication date
CN113330142A (zh) 2021-08-31
JP7461351B2 (ja) 2024-04-03
TW202035777A (zh) 2020-10-01
WO2020109361A2 (de) 2020-06-04
KR20210094019A (ko) 2021-07-28
DE102018130139A1 (de) 2020-05-28
EP3887569A2 (de) 2021-10-06
JP2022510900A (ja) 2022-01-28

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