WO2020103195A1 - Procédé de découpe de tranche de batterie monocristalline, tranche de batterie monocristalline, ensemble photovoltaïque et procédé de préparation - Google Patents

Procédé de découpe de tranche de batterie monocristalline, tranche de batterie monocristalline, ensemble photovoltaïque et procédé de préparation

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Publication number
WO2020103195A1
WO2020103195A1 PCT/CN2018/119518 CN2018119518W WO2020103195A1 WO 2020103195 A1 WO2020103195 A1 WO 2020103195A1 CN 2018119518 W CN2018119518 W CN 2018119518W WO 2020103195 A1 WO2020103195 A1 WO 2020103195A1
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WIPO (PCT)
Prior art keywords
single crystal
wafer
edge
cutting
cell
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PCT/CN2018/119518
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English (en)
Chinese (zh)
Inventor
尹丙伟
孙俊
丁士引
杨蕾
周福深
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成都晔凡科技有限公司
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Publication of WO2020103195A1 publication Critical patent/WO2020103195A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a cutting method for single crystal battery slices.
  • the invention also relates to a single crystal cell sheet, a method for preparing a photovoltaic module, and a photovoltaic module manufactured by this method.
  • both half-chip photovoltaic module technology and shingled photovoltaic module technology can increase the power of the module. Both the half-chip photovoltaic module and shingled photovoltaic module need to be cut for the whole piece of solar cells.
  • the cutting method of single-crystal silicon wafers of solar cells is mainly to align the growth ridge line of the single-crystal silicon round rod of the ⁇ 100> crystal direction grown by the Czochralski method as the raw material with the ridge line of the crystal support on the square machine crystal support
  • the obtained monocrystalline silicon square rod is rounded by a spheronizer to obtain a square rod of uniform size, and then the square rod is subjected to wire cutting and slicing to obtain a monocrystalline silicon wafer for battery production.
  • the four edge crystal orientations of the cut single crystal silicon wafers are ⁇ 100> ⁇ 2 °.
  • the cutting method of the battery sheet is often carried out by mechanical cutting or laser cutting, but cutting with these methods will cause a certain loss to the conversion efficiency of the battery sheet to varying degrees.
  • the current laser cutting method of solar cells mainly uses focused high-power laser beams to irradiate the cells.
  • the beams are absorbed.
  • the temperature of the material at the irradiation point rises sharply.
  • the temperature reaches the boiling point After that, the material begins to vaporize and form voids.
  • a pre-cut mark is formed first, and then the split is performed according to the direction of the cut. Because laser cutting has the advantages of narrow cutting seam, fast cutting speed, good vertical edge of the cutting seam, and no tool wear, it is widely used in solar cell slicing of photovoltaic modules.
  • the object of the present invention is to provide an improved cutting method for a single crystal cell sheet, a method for preparing a photovoltaic module, and a photovoltaic module manufactured by this method of preparation, by which the cutting battery can be reduced
  • the loss of efficiency during filming increases the overall power of the component.
  • Step of providing raw materials provide wafer rods with crystal orientation ⁇ 100> as raw materials;
  • the angle adjustment step make the growth ridge of the wafer rod and the adjacent ridge of the wafer holder be separated by 45 degrees in the circumferential direction;
  • Open slicing step Open and slice the wafer rod to obtain a single crystal silicon wafer, the crystal orientation of the four edges of the single crystal silicon wafer is ⁇ 110>;
  • Step of making a battery chip the single crystal silicon chip is made into a single crystal cell chip.
  • the cutting method includes the following steps:
  • the step of cutting out the weakened part cutting out the weakened part perpendicular to the edge of the single crystal cell;
  • Splitting step applying mechanical stress, the single crystal cell splits at the weakened portion in a direction perpendicular to the weakened portion of the edge.
  • the invention cuts a weakened part perpendicular to the edge at the edge of the single crystal cell, and then slightly applies mechanical stress to make the cell split naturally along a straight line , And the split direction of the battery sheet, that is, the direction of the cutting seam between the two small battery sheets formed by cutting is perpendicular to the edge. This can reduce the efficiency loss of the solar cell during the high-temperature cutting process and increase the overall power of the component.
  • the weakened portion may be an opening or a cut.
  • the cut may be a continuous or segmented score.
  • another weakened portion in the step of cutting out the weakened portion, another weakened portion may be cut opposite to the weakened portion on another edge parallel to the edge. That is, a weakened portion is cut at each end of the cutting slit, and then mechanical stress is applied to split the single crystal cell.
  • the steps of cutting out the weakened portion and applying mechanical stress to split the single crystal cell sheet can be repeated until a small-sized cell sheet of a desired size is obtained.
  • the wafer rod in the step of adjusting the angle, may be placed on the wafer support of the square-cutting machine before the square-opening, so that the growth edge of the wafer rod The line coincides with the ridge line of the wafer holder of the square machine, and then the wafer rod is rotated clockwise or counterclockwise by 45 degrees.
  • the single crystal silicon wafer may undergo surface texturing, diffusion bonding, removal of phosphorosilicate glass, deposition of anti-reflection film, and screen printing.
  • AlBSF aluminum back field
  • the single crystal silicon wafer undergoes steps such as texturing, diffusion, etching, back passivation, coating, laser engraving, printing and sintering, etc. Made into PERC cells.
  • the single crystal silicon wafer in the cell manufacturing step, is subjected to texturing, diffusion bonding, etching to remove borosilicate glass, tunnel junction preparation, ion implantation, and annealing , Cleaning, coating, screen printing and sintering are made into TopCon cells.
  • the single crystal silicon wafer in the battery cell manufacturing step, becomes a texturing, amorphous silicon thin film lamination, transparent conductive film lamination, printed electrode fabrication and other steps to become Heterojunction cells.
  • a method for manufacturing a photovoltaic module includes the following steps: providing a wafer rod with a crystal orientation of ⁇ 100> as a raw material; The growth ridge line and the adjacent wafer ridge line of the square machine wafer are spaced at an angle of 45 degrees along the circumferential direction, and then the wafer rod is squared and sliced to obtain a monocrystalline silicon wafer.
  • the crystal orientation of the four edges is ⁇ 110>; the single crystal silicon wafer is made into a single crystal cell; the weakened part is cut perpendicular to the edge of the single crystal cell, and then mechanical stress is applied, then the single crystal At the weakened portion, the cell sheet splits into small pieces of cell sheet in a direction perpendicular to the edge; a photovoltaic module is composed of a plurality of the small pieces of cell sheet.
  • a single crystal battery slice wherein the crystal orientation of the four edges of the single crystal battery slice is ⁇ 110> and is perpendicular to the edge of the single crystal battery slice There is a weakened part of a certain length.
  • the weakened portion may be an opening or a cut.
  • the cut may be a continuous or segmented score.
  • another weakened portion opposite to the weakened portion and on the same straight line as the weakened portion may be provided on another edge parallel to the edge.
  • a photovoltaic module is also proposed.
  • the photovoltaic module is manufactured by the above-mentioned preparation method for a photovoltaic module.
  • the photovoltaic module may be a half photovoltaic module or a shingled photovoltaic module.
  • the invention adjusts the silicon wafer manufacturing process, especially the square edge crystal orientation, so that the direction of the predetermined cutting slit of the manufactured solar cell and the crystal ⁇ 110>
  • the crystal direction is parallel, and then a weakened part of a certain depth and length is cut at one or both ends of the cutting slit by, for example, mechanical cutting or laser cutting, and then the mechanical slice is applied to split the battery sheet along the predetermined cutting slit, Therefore, the purpose of low-temperature slicing is achieved, the damage of the battery chip at high temperature is reduced, and the efficiency of the small battery chip after cutting is improved, thereby increasing the power of the assembly.
  • FIG. 1 schematically shows a manufacturing process of a photovoltaic module, in which a cell sheet is cut by a cutting method according to a preferred embodiment of the present invention
  • Fig. 2 shows a wafer rod as a raw material in a schematic perspective view
  • FIG. 3 shows in a schematic perspective view a wafer machine wafer holder for the wafer rod shown in FIG. 2;
  • FIG. 4 shows a schematic perspective view of a single-crystal silicon wafer obtained after square cutting and slicing, and the crystal orientation of the four edges of the single-crystal silicon wafer is ⁇ 110>;
  • FIG. 5 shows a schematic perspective view of a single crystal cell made of the single crystal silicon chip shown in FIG. 4, and the crystal directions of the four edges of the single crystal cell are ⁇ 110>;
  • Fig. 6a shows a schematic top view of a single crystal cell sheet waiting to be cut according to a preferred embodiment of the present invention
  • Fig. 6b shows a single crystal cell slice cut according to a preferred embodiment of the present invention in a schematic top view.
  • FIG. 1 shows a manufacturing process of a photovoltaic module, in which the cells used to compose the photovoltaic module are cut by the cutting method according to the preferred embodiment of the present invention.
  • the wafer rod 1 in the ⁇ 100> crystal direction as a raw material.
  • the wafer rod 1 has a plurality of growth ridges 2 along the direction of its central axis.
  • the substantially cylindrical square crystal support 3 has a plurality of crystal support ridges 4 along its central axis.
  • the growth ridge 2 of the wafer rod 1 is overlapped with the ridge ridge 4 of the square wafer support 3 shown in FIG. 3, and then the wafer rod 1 is clockwise or By rotating counterclockwise by 45 degrees, the growth ridgeline 2 of the wafer rod 1 and the wafer ridgeline 4 adjacent to the growth ridgeline of the square wafer support 3 are circumferentially spaced at an angle of 45 degrees.
  • the wafer rod 1 is squared and polished to obtain square rods, and then the square rods obtained after squared and polished are sliced.
  • the crystal orientation of each edge is ⁇ 110>.
  • the single crystal silicon wafer is subjected to surface texturing, cleaning, diffusion bonding, removal of phosphorous silicate glass, deposition of anti-reflective film and screen printing to make a single crystal cell sheet 5, as follows:
  • the surface of the single crystal silicon wafer is textured, so that the single crystal silicon wafer can obtain a good suede structure, which can increase the specific surface area to accept more photons (energy), while reducing the reflection of incident light;
  • Phosphorus oxychloride reacts with the single crystal silicon wafer to obtain phosphorus atoms. After a certain period of time, the phosphorus atoms enter the surface layer of the single crystal silicon wafer, and penetrate into the single crystal silicon wafer through the gaps between the silicon atoms to form The interface between the N-type semiconductor and the P-type semiconductor is completed, thereby completing the diffusion bonding process and realizing the conversion of light energy to electrical energy;
  • the diffusion junction forms a short-circuit channel at the edge of the single-crystal silicon wafer, the photogenerated electrons collected on the front of the PN junction will flow along the edge of the phosphorus-diffused area to the back of the PN junction, resulting in a short circuit.
  • Plasma etching will The edge PN junction is removed by etching to avoid short circuit caused by the edge;
  • the diffusion bonding process will form a layer of phosphorous silicate glass on the surface of the single crystal silicon wafer, the effect on the efficiency of the shingled battery can be reduced through the dephosphorization silicon glass process.
  • it in order to reduce the damage of the high temperature to the diffusion and the lattice, it can be increased Annealing process steps;
  • silicon nitride antireflection film In order to reduce the surface reflection of the single crystal silicon wafer and improve the conversion efficiency of the battery, it is necessary to deposit one or more layers of silicon nitride antireflection film, which can be passed through a chemical vapor deposition process such as PECVD (plasma enhanced chemical vapor deposition method) Complete anti-reflection film preparation;
  • PECVD plasma enhanced chemical vapor deposition method
  • the back electrode, back electric field and front grid of the solar cell are screen printed, and the manufacturing process of the single crystal cell is completed through the sintering process to obtain the AlBSF cell.
  • the monocrystalline silicon wafer may also be made into other types of monocrystalline solar cells, for example, it may undergo texturing, diffusion, etching, back passivation, coating, laser engraving, Printed and sintered into PERC cells, or can be made into TopCon cells through texturing, diffusion bonding, etched borosilicate glass, tunnel junction preparation, ion implantation, annealing, cleaning, coating, screen printing and sintering, etc.
  • the single crystal cell sheet produces weakened portions, such as openings or cuts, at one or both ends of the predetermined cutting line 6 by mechanical cutting or laser cutting, such as cutting a cut 7 of a certain depth and length (such as As shown in FIG. 6a, the cut 7 has a length l), and the cut 7 can be a continuous score or a discontinuous score, and then a slight mechanical stress is applied, according to the structural characteristics of the crystalline silicon ⁇ 110> crystal direction natural lobes The single crystal cell will easily and neatly split along the predetermined cutting line 6 (as shown in Figure 6b).
  • the photovoltaic module is composed of the cut pieces of solar cells.
  • FIG. 4 a single-crystal silicon wafer obtained by square cutting and slicing is schematically shown, and the four edges of the single-crystal silicon wafer have a crystal orientation of ⁇ 110>.
  • FIG. 5 the single crystal silicon wafer shown in FIG. 4 is produced through processes such as texturing, cleaning, diffusion bonding, removal of phosphorosilicate glass, deposition of anti-reflection film, and screen printing.
  • the crystal directions of the four edges of the single crystal cell slice are also ⁇ 110>.
  • FIG. 6a a single-crystal cell sheet waiting to be cut is schematically shown, the single-crystal cell sheet is made by the above method, the front and back surfaces of the cell sheet are substantially square, and the crystal directions of its four edges are ⁇ 110> ,
  • the front is formed with a pattern, and there are a plurality of predetermined cutting lines 6 parallel to two edges, for example, left and right edges, on the front or the back.
  • a weakened portion is formed at one end or both ends of a predetermined cutting line 6, for example, a cut 7 is formed, and the predetermined cutting line is perpendicular to the upper and lower edges of the single crystal cell.
  • Fig. 6b schematically shows a single crystal cell slice cut along a predetermined cutting line 6.
  • the cut 7 can make the single crystal cell sheet easily along the predetermined cutting line 6 And neatly split, greatly reducing the debris and improving the slicing efficiency.

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Abstract

L'invention concerne un procédé de découpe de tranche de batterie monocristalline, une tranche de batterie monocristalline, un ensemble photovoltaïque et un procédé de préparation, la tranche de batterie monocristalline étant préparée de la manière suivante : la fourniture d'une tige de tranche (1) avec une orientation cristalline <100> en tant que matières premières ; la réalisation d'une ligne de crête de croissance (2) de la tige de tranche (1) et de la ligne de crête de support de cristal adjacente (4) d'un support de cristal au carré (3) espacé selon un angle de 45 degrés dans la direction circonférentielle, puis la mise au carré et le tranchage de la tige de tranche (1) pour obtenir une tranche de silicium monocristallin, l'orientation cristalline des quatre bords de la tranche de silicium unique est <110> ; la préparation de la tranche de silicium monocristallin dans une tranche de batterie monocristalline (5), caractérisée en ce que le procédé de découpe comprend les étapes suivantes consistant à : découper une partie affaiblie perpendiculaire à un bord de la tranche de batterie monocristalline ; appliquer une contrainte mécanique pour diviser la tranche de batterie monocristalline dans la direction de partie affaiblie perpendiculaire au bord.
PCT/CN2018/119518 2018-11-23 2018-12-06 Procédé de découpe de tranche de batterie monocristalline, tranche de batterie monocristalline, ensemble photovoltaïque et procédé de préparation WO2020103195A1 (fr)

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CN201811406932.0A CN111223949A (zh) 2018-11-23 2018-11-23 单晶电池片切割方法、单晶电池片、光伏组件及制备方法
CN201811406932.0 2018-11-23

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CN112060379A (zh) * 2020-08-19 2020-12-11 泰州隆基乐叶光伏科技有限公司 一种硅片切割方法、硅片、电池片和光伏组件
CN114093979A (zh) * 2020-08-25 2022-02-25 苏州阿特斯阳光电力科技有限公司 光伏电池裂片方法及裂片设备
CN113921639A (zh) * 2020-10-12 2022-01-11 上海晶澳太阳能科技有限公司 硅片及制备方法、电池片、电池切片、电池串及光伏组件
CN112428462A (zh) * 2020-11-13 2021-03-02 韩华新能源（启东）有限公司 一种调控金刚线单晶硅片金字塔绒面的方法
CN114765231A (zh) * 2020-12-30 2022-07-19 苏州阿特斯阳光电力科技有限公司 光伏电池及其制备方法
CN113571601B (zh) * 2021-07-23 2023-05-12 常州时创能源股份有限公司 一种提高电池分片成品率的方法
CN114179235A (zh) * 2021-12-20 2022-03-15 常州时创能源股份有限公司 <110>偏晶向硅片的制备工艺

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