WO2020101337A1 - Appareil de génération de gaz d'oxyde d'azote et son procédé de commande - Google Patents

Appareil de génération de gaz d'oxyde d'azote et son procédé de commande Download PDF

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Publication number
WO2020101337A1
WO2020101337A1 PCT/KR2019/015400 KR2019015400W WO2020101337A1 WO 2020101337 A1 WO2020101337 A1 WO 2020101337A1 KR 2019015400 W KR2019015400 W KR 2019015400W WO 2020101337 A1 WO2020101337 A1 WO 2020101337A1
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WO
WIPO (PCT)
Prior art keywords
reaction chamber
temperature
nitrogen oxide
unit
oxide gas
Prior art date
Application number
PCT/KR2019/015400
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English (en)
Korean (ko)
Inventor
박승일
이창호
김성봉
유승민
Original Assignee
한국기초과학지원연구원
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Publication of WO2020101337A1 publication Critical patent/WO2020101337A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/10—Cooling arrangements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/10—Treatment of gases
    • H05H2245/15—Ambient air; Ozonisers

Definitions

  • the present invention relates to a nitrogen oxide gas generator and its control method.
  • Plasma is a fourth material state that can be obtained through an electric field, and is a local ionized gas that contains ions, electrons, neutral particles, and radicals.
  • the plasma-based method can be roughly classified into an underwater plasma method using water, a high temperature plasma method, or a low temperature plasma method.
  • the above-described underwater plasma method and high temperature plasma method have a problem in that it is difficult to control the amount of ozone generated.
  • Plasma in the form of ionized gas generated in the form of low temperature plasma type dielectric barrier discharge also includes reactive species and reactive oxygen (O) including electrons, cations, anions, free radicals, ultraviolet rays, and photons. -, O 2, O 3) and hydrogen peroxide as shown in (H 2 O 2) and there is a strong sterilizing power, the gas phase material.
  • O reactive oxygen
  • H 2 O 2 hydrogen peroxide
  • the present invention has been devised to solve the above problems, and an object of the present invention is to provide a nitrogen oxide gas generator and a control method thereof that can suppress ozone generation using plasma and effectively generate nitrogen oxide gas. have.
  • a reaction chamber for generating a plasma
  • a gas supply unit supplying gas to the reaction chamber
  • a power supply unit supplying power for generating plasma to the reaction chamber
  • a heater unit for raising the temperature of the reaction chamber
  • a sensor unit for sensing the temperature in the reaction chamber
  • a control unit that receives the temperature of the reaction chamber sensed from the sensor unit and controls the heater unit so that the temperature in the reaction chamber is within a preset temperature range.
  • reaction chamber may generate plasma in the form of a dielectric barrier discharge (DBD).
  • DBD dielectric barrier discharge
  • control unit may control the speed of the gas flowing into the reaction chamber from the gas supply unit according to the temperature in the reaction chamber.
  • control unit may turn on the power of the power supply unit.
  • control unit may turn off the power of the power supply unit before the temperature in the reaction chamber reaches a temperature of 90% of the lowest temperature in the preset temperature range.
  • the predetermined temperature range may be 100 °C to 300 °C.
  • the heater unit may be arranged to be spaced apart from the reaction chamber by a predetermined distance.
  • control unit may control the cooling unit to control the temperature of the plasma electrode in the reaction chamber.
  • the cooling unit is a ceramic block disposed on one side of the reaction chamber; An inlet pipe for introducing cooling water into the ceramic block; And it may include a; discharge pipe for discharging the cooling water flowed from the ceramic block.
  • the present invention in the control method of the above-described nitrogen oxide gas generator, driving a heater unit; Determining whether the temperature in the reaction chamber is within a preset temperature range; Generating a plasma in the reaction chamber by turning on the power of the power supply unit; And maintaining the temperature in the reaction chamber in a predetermined range after turning on the power of the power supply unit.
  • the power-off part can be controlled before the temperature in the reaction chamber reaches a temperature of 90% of the lowest temperature in the preset temperature range.
  • the speed of the gas flowing into the reaction chamber from the gas supply unit may be controlled according to the temperature in the reaction chamber.
  • the present invention can control the temperature inside the reaction chamber for generating plasma or control the flow rate of gas at the same time as the temperature control to suppress ozone generation and effectively promote the production of nitrogen oxide gas.
  • FIG. 1 is a perspective view of a nitrogen oxide gas generator according to an embodiment of the present invention.
  • Figure 2 is a view seen from the bottom by removing the housing in Figure 1;
  • FIG. 3 is a module diagram of a nitrogen oxide gas generator according to an embodiment of the present invention.
  • Figure 4 is a flow chart of a control method of a nitrogen oxide gas generator according to an embodiment of the present invention.
  • FIG. 5 is a flow chart embodying the plasma generation step in FIG. 4.
  • FIG. 1 is a perspective view of a nitrogen oxide gas generator according to an embodiment of the present invention
  • FIG. 2 is a view seen from the bottom by removing the housing in FIG. 1
  • FIG. 3 is a nitrogen oxide gas generator according to an embodiment of the present invention It's a modular diagram.
  • the nitrogen oxide gas generator 100 is largely a reaction chamber 110, a housing 115, a gas supply unit 120, a power supply unit 130, a heater unit ( 140), a sensor unit 150 and a control unit 160, and may further include a filter unit 170 and / or a cooling unit 180.
  • the reaction chamber 110 is a place for generating plasma, for example, the reaction chamber 110 may generate plasma in the form of a dielectric barrier discharge (DBD).
  • DBD dielectric barrier discharge
  • the reaction chamber 110 may include a first electrode and a second electrode, and the first electrode and the second electrode may be electrically connected to a power supply unit 130 to be described later.
  • reaction chamber 110 may be implemented with a material that can withstand high temperatures, for example, stainless steel or aluminum, in consideration of the heater unit 140 to be described later.
  • the inside of the reaction chamber 110 or the reaction chamber 110 may be formed of a glass tube, and the glass tube may be formed of a material containing quartz.
  • the reaction chamber 110 may be disposed inside the housing 115.
  • the gas supply unit 120 may supply gas to the reaction chamber 110, and gas may use air. However, when the user needs a more pure nitrogen oxide gas, nitrogen and oxygen gas may be mixed and used.
  • the gas supply unit 120 may include a check valve or the like, and may open and close a flow path of gas flowing into the reaction chamber 110 by a control unit 160 to be described later.
  • control unit 160 may control the flow rate of the gas by adjusting the amount of gas flowing from the gas supply unit 120.
  • the power supply unit 130 may supply power for generating plasma to the reaction chamber 110, and specifically, power for the first electrode and the second electrode.
  • the power of the power supply unit 130 may be, for example, a sine wave, a voltage peak to peak (Vpp) of 5 to 10 kV, and 10 to 30 kHz.
  • Vpp voltage peak to peak
  • Discharge of plasma generates reactive species and reactive oxygen species (O-, O2, O3) including electrons, cations, anions, free radicals, ultraviolet rays, photons, etc.
  • reactive species and reactive oxygen species O-, O2, O3
  • the heater unit 140 is disposed to increase the temperature of the reaction chamber 110, and may be implemented as an infrared lamp-based heater or a heating wire-based heater.
  • the heater unit 140 is an infrared lamp-based heater
  • an opening or a transparent window having a size corresponding to the heater unit 140 is formed at an upper portion of the housing 115 to effectively react with the infrared lamp light. Heat may be transferred to the chamber 110.
  • the heater unit 140 may be disposed to be spaced apart from the reaction chamber 110 in consideration of the gas in the reaction chamber 110.
  • the heater unit 140 may include at least one fan 145, and the fan 145 may be controlled by a control unit 160, which will be described later, to adjust the temperature of the heater unit 140. Can be.
  • the sensor unit 150 may be disposed inside or outside the reaction chamber 110 to sense the temperature in the reaction chamber 110, and transmit the temperature of the reaction chamber 110 to the control unit 160 to be described later. Can be.
  • the filter unit 170 may be disposed in front and / or rear of the reaction chamber 110 to increase the purity of the nitrogen oxide gas.
  • the filter unit 170 is disposed between the gas supply unit 120 and the reaction chamber 110 to filter the first filter 171 to filter dust and other foreign matter from the gas flowing into the reaction chamber 110 It can contain.
  • the filter unit 170 is disposed at the rear of the reaction chamber 110, various incidental gases contained in the nitrogen oxide gas discharged from the reaction chamber 110 or a specific gas, for example, ozone ( O3) may include a second filter 172.
  • the control unit 160 receives the temperature of the reaction chamber 110 sensed from the sensor unit 150, and controls the heater unit 140 so that the temperature in the reaction chamber 110 becomes a preset temperature range. Can be.
  • the preset temperature range may be 100 ° C to 300 ° C, and this temperature range may be changed and set according to the volume of the reaction chamber 110.
  • control unit 160 may control the speed of gas flowing into the reaction chamber 110 from the gas supply unit 120 according to the temperature in the reaction chamber 110.
  • the controller 160 gradually slows the flow rate of gas when it is less than 250 ° C, and gradually increases when it is 250 ° C or more. Quick control.
  • the gas flow can be accelerated to lower the inside of the reaction chamber 110 in an air-cooled manner to promote optimal nitrogen oxide gas generation.
  • control unit 160 can effectively control the temperature in the reaction chamber 110 by organically controlling the heater unit 140 and the gas supply unit 120.
  • control unit 160 can effectively control the temperature in the reaction chamber 110 by organically controlling the power supply unit 130, the heater unit 140, and / or the gas supply unit 120.
  • control of the power supply unit 130 is not a concept of on / off, which will be described later, but is to control a variable degree of voltage or frequency applied to the electrode, and the electrode temperature rise is constant through the power control. Partial adjustment is possible.
  • on / off of the power supply unit 130 may be implemented as follows.
  • the control unit 160 may turn on the power of the power supply unit 130 only when the temperature in the reaction chamber 110 is within a preset temperature range.
  • control unit 160 may turn off the power of the power supply unit 130 before the temperature in the reaction chamber 110 reaches a temperature of 90% of the lowest temperature in the preset temperature range.
  • the present invention may further include a cooling unit 180 disposed on one side of the reaction chamber 110.
  • the cooling unit 180 includes a ceramic block 181 disposed on one side of the reaction chamber 110, an inlet pipe 182 for introducing cooling water into the ceramic block 181, and the ceramic block ( It may include a discharge pipe 183 for discharging the cooling water flowed in 181).
  • the cooling unit 180 is for maintaining a constant temperature of the plasma electrode when the temperature inside the reaction chamber 110 including the plasma electrode is heated by the heater unit 140, the temperature of the plasma electrode reacts When heated and changed by the temperature inside the chamber 110, since the amount of active species by-products generated in the discharge region of the plasma electrode increases, the temperature of the plasma electrode discharge region is kept constant to increase the amount of active species by-products. This is to keep it constant.
  • control unit 160 may control the cooling unit 180 to control the temperature of the plasma electrode in the reaction chamber 110.
  • FIG. 4 is a flow chart of a method for controlling a nitrogen oxide gas generator according to an embodiment of the present invention
  • FIG. 5 is a flow chart embodying the plasma generation step in FIG. 4.
  • the heater unit 140 is driven to increase the temperature in the reaction chamber 110 (S10).
  • control unit 160 may generate the plasma inside the reaction chamber 110 by turning on the power supply unit 130 (S31), and in this case, the gas according to the temperature sensed in real time.
  • the flow rate of the gas flowing into the reaction chamber 110 may be controlled by controlling the supply unit 120 (S32).
  • the gas flow rate can be quickly controlled.
  • the heater unit 140 is controlled to maintain the temperature inside the reaction chamber 110 in a predetermined range (S40), and the reaction chamber ( 110)
  • the power of the power supply unit 130 is turned off before the internal temperature becomes 90% or less of the preset minimum temperature (S50).
  • the amount of ozone generated can be suppressed by turning off the power of the power supply unit 130 before it becomes 90 ° C or less.
  • the present invention can control the temperature inside the reaction chamber 110 for generating plasma, or control the flow rate of gas at the same time as the temperature control, thereby suppressing ozone generation and effectively generating nitrogen oxide gas. There is this.

Abstract

La présente invention concerne appareil de génération de gaz d'oxyde d'azote et un procédé de commande de celui-ci. L'appareil de génération de gaz d'oxyde d'azote comprend une chambre de réaction pour générer un plasma ; une unité d'alimentation en gaz pour fournir du gaz à la chambre de réaction ; une unité d'alimentation pour fournir de l'énergie électrique pour générer le plasma dans la chambre de réaction ; une unité de chauffage pour augmenter la température de la chambre de réaction ; une unité de capteur pour détecter la température dans la chambre de réaction ; et un dispositif de commande recevant la température de la chambre de réaction détectée par l'unité de capteur et commandant l'unité de chauffage de telle sorte que la température dans la chambre de réaction est dans une plage de température réglée à l'avance.
PCT/KR2019/015400 2018-11-15 2019-11-13 Appareil de génération de gaz d'oxyde d'azote et son procédé de commande WO2020101337A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0140770 2018-11-15
KR1020180140770A KR102149432B1 (ko) 2018-11-15 2018-11-15 실시간 질소 산화물 가스 발생장치 및 이의 제어 방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112770470A (zh) * 2020-12-25 2021-05-07 西安电子科技大学 介质阻挡放电装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102504881B1 (ko) * 2022-03-07 2023-02-28 주식회사 제이시스 반응기의 온도제어방법

Citations (5)

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KR101544329B1 (ko) * 2011-09-08 2015-08-12 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 플라즈마 발생 장치, cvd 장치 및 플라즈마 처리 입자 생성 장치
KR20160062876A (ko) * 2014-11-26 2016-06-03 주식회사 플라즈맵 플라즈마 처리수 제조 장치 및 활성 가스 발생 장치
KR20170038531A (ko) * 2015-09-30 2017-04-07 세메스 주식회사 기판 처리 방법 및 장치
KR20180015053A (ko) * 2016-08-02 2018-02-12 주식회사 피글 임플란트 처리 장치
US20180221619A1 (en) * 2013-03-15 2018-08-09 The General Hospital Corporation Synthesis of nitric oxide gas for inhalation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101544329B1 (ko) * 2011-09-08 2015-08-12 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 플라즈마 발생 장치, cvd 장치 및 플라즈마 처리 입자 생성 장치
US20180221619A1 (en) * 2013-03-15 2018-08-09 The General Hospital Corporation Synthesis of nitric oxide gas for inhalation
KR20160062876A (ko) * 2014-11-26 2016-06-03 주식회사 플라즈맵 플라즈마 처리수 제조 장치 및 활성 가스 발생 장치
KR20170038531A (ko) * 2015-09-30 2017-04-07 세메스 주식회사 기판 처리 방법 및 장치
KR20180015053A (ko) * 2016-08-02 2018-02-12 주식회사 피글 임플란트 처리 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112770470A (zh) * 2020-12-25 2021-05-07 西安电子科技大学 介质阻挡放电装置

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KR20200056737A (ko) 2020-05-25
KR102149432B1 (ko) 2020-08-31

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