WO2020101180A1 - Électrode à réseaux multiples ayant des parties d'électrode en saillie disposées sur celle-ci, son procédé de fabrication, et procédé de fabrication de masque de dépôt organique à l'aide d'une électrode à réseaux multiples - Google Patents

Électrode à réseaux multiples ayant des parties d'électrode en saillie disposées sur celle-ci, son procédé de fabrication, et procédé de fabrication de masque de dépôt organique à l'aide d'une électrode à réseaux multiples Download PDF

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WO2020101180A1
WO2020101180A1 PCT/KR2019/013254 KR2019013254W WO2020101180A1 WO 2020101180 A1 WO2020101180 A1 WO 2020101180A1 KR 2019013254 W KR2019013254 W KR 2019013254W WO 2020101180 A1 WO2020101180 A1 WO 2020101180A1
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Prior art keywords
opening
electrode
protruding
thin plate
substrate
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PCT/KR2019/013254
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English (en)
Korean (ko)
Inventor
김성빈
박찬규
고건웅
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주식회사 애니캐스팅
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Priority claimed from KR1020180139454A external-priority patent/KR102109037B1/ko
Priority claimed from KR1020180139455A external-priority patent/KR102075064B1/ko
Application filed by 주식회사 애니캐스팅 filed Critical 주식회사 애니캐스팅
Publication of WO2020101180A1 publication Critical patent/WO2020101180A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B23H3/04—Electrodes specially adapted therefor or their manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00—Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/22—Electrodes specially adapted therefor or their manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details

Definitions

  • the present invention relates to a method for manufacturing an organic deposition mask used in an OLED (Organic Light Emitting Diode) manufacturing process, and to a multi-array electrode used for manufacturing such an organic deposition mask.
  • OLED Organic Light Emitting Diode
  • OLED Organic Light Emitting Diodes
  • OLED Organic Light Emitting Diodes
  • characteristics such as sensibility screen realization, high-speed response speed, self-luminescence, thin production, low power, wide viewing angle, but also can use flexible substrates, so they can be used in display and lighting fields. It is in the spotlight.
  • an organic light emitting diode (OLED) display device has a self-emission characteristic and, unlike a liquid crystal display device, does not require a separate light source, so that thickness and weight can be reduced. It is attracting attention in that it has high quality characteristics such as viewing angle, low power consumption, high luminance and high reaction speed.
  • each sub-pixel may be formed by various methods in the process of manufacturing the organic light-emitting display device, one of which is a deposition method.
  • a fine metal mask having a deposition opening of the same pattern as a thin film to be formed on a substrate is required.
  • the fine metal mask is used to form a pixel pattern on a substrate by depositing an organic material on the substrate in the manufacturing process of the organic light emitting diode panel, a metal thin plate having a deposition opening of the same pattern as the pixel pattern to be formed on the substrate.
  • the deposition process is performed, when a fine metal mask having a deposition opening of the same pattern as a thin film to be formed on a substrate is aligned between a deposition source and a substrate located at the bottom of the chamber, and then heating an organic substance in the deposition source, heating The sublimated organic material is sublimed and the sublimated organic material is deposited on the substrate by passing through the deposition opening of the fine metal mask located on the top, and a thin film of a desired pattern, that is, a pixel pattern is formed on the substrate.
  • the fine metal mask significantly affects the quality and overall yield of the organic light emitting diode display, the importance of the fine metal mask is increasing.
  • UHD ultra high definition
  • VR virtual reality
  • UHD ultra high resolution
  • Conventional methods of manufacturing a fine metal mask as described above include an etching method and an electroforming method.
  • the etching method is to form a resist layer having a pattern of vapor deposition openings on a thin plate by a photoresist method or attach a film having a pattern of vapor deposition openings to a thin plate and then etch the thin plate.
  • the method of manufacturing the fine metal mask by the etching method has a problem that the tolerance of the width and the edge of the deposition opening cannot be precisely matched as the fine metal mask is enlarged and the pattern of the deposition opening is fine.
  • the tolerance of the width and the edge of the deposition opening cannot be precisely matched as the fine metal mask is enlarged and the pattern of the deposition opening is fine.
  • the specification of the deposition opening cannot be made uniform.
  • Electroplating is a method of producing a thin plate by electroplating on a mold and then releasing it. Electrolytic plating of a metal salt solution by electrolysis of a metal salt solution in the same operation as electroplating deposits the metal to the required thickness and then peels off the mold. If this is done, the mold and the concave-convex parts become opposite electroformed products. This is a method of manufacturing a fine metal mask using this principle.
  • the method of manufacturing the fine metal by the electroplating method requires separating the plating layer from the mold. At this time, it is difficult to realize high precision, and there is a problem that deformation of the thin plate is distorted during the plating process.
  • the present invention is to solve the above problems, and an object of the present invention is to provide a method for manufacturing an organic deposition mask of a new type capable of forming a fine deposition opening in a thin plate by electrolytic processing using a multi-array electrode in which a protruding electrode is arranged. .
  • an object of the present invention is to provide a multi-array electrode that can be used for manufacturing an organic vapor deposition mask having a fine deposition opening, and a method for manufacturing the same, comprising a structure in which a protruding electrode portion capable of precisely processing fine holes is arranged.
  • the method of manufacturing an organic deposition mask according to an embodiment of the present invention is a method of manufacturing an organic deposition mask having a deposition opening comprising a first opening facing an evaporation source and a second opening facing an evaporation target, one side of a thin plate Forming a first opening in the first opening, and electrolytic processing using a second multi-array electrode in which a second protruding electrode is arranged to communicate with the first opening on the opposite side of the thin plate And forming a second opening to form.
  • a multi-array electrode in which a protruding electrode unit is arranged includes a substrate; A protrusion arranged on one surface of the substrate; And a plating layer formed on the surface of the substrate, wherein the protruding electrode portion is characterized in that the plating layer is formed on the protruding portion surface.
  • a method of manufacturing a multi-array electrode in which protruding electrode portions are arranged includes: a pattern region forming step of forming a pattern region for forming the protruding electrode portion on one surface of a substrate; Forming a protruding portion for forming the protruding electrode portion on one surface of the substrate by etching one surface of the substrate on which the pattern region is formed; And a plating layer forming step of forming a plating layer on the substrate surface, wherein the protruding electrode portion is characterized in that the plating layer is formed on the protruding portion surface.
  • a multi-array electrode made of a structure in which a protruding electrode portion capable of precisely processing fine holes is arranged.
  • FIG. 1 is a view schematically showing an organic deposition mask according to an embodiment of the present invention.
  • FIG. 2 is a flowchart illustrating a method of manufacturing an organic deposition mask according to a first embodiment of the present invention
  • FIGS. 3 to 6 are views for explaining a process of manufacturing the organic deposition mask according to the first embodiment of the present invention
  • FIG. 3 is a view schematically showing a state in which a pattern region is formed on a thin plate
  • FIG. 4 is a diagram schematically showing a state in which a first opening is formed by wet etching on a thin plate
  • FIG. 5 is a photo in FIG. 4
  • FIG. 6 is a diagram schematically showing one form of the step of forming the second opening.
  • FIG. 7 is a partial plan view schematically illustrating a second multi-array electrode according to an embodiment of the present invention
  • FIG. 8 is a schematic A-A sectional view of FIG. 7.
  • FIG. 9 is a flowchart illustrating a method of manufacturing an organic deposition mask according to a second embodiment of the present invention
  • FIGS. 10 to 13 are views for explaining a process of manufacturing the organic deposition mask according to a second embodiment of the present invention
  • FIG. 10 is a view schematically showing one form of the first opening forming step according to the second embodiment of the present invention
  • FIG. 11 schematically shows the thin plate formed after the first opening forming step according to the second embodiment of the present invention
  • 12 is a view schematically showing one form of a step of forming a second opening according to a second embodiment of the present invention
  • FIG. 13 is a method of manufacturing an organic deposition mask according to a second embodiment of the present invention. It is a view schematically showing an organic deposition mask produced by.
  • FIG. 14 is a flowchart showing a method of manufacturing an organic deposition mask according to a third embodiment of the present invention
  • FIG. 15 is a view schematically showing one form of a method of manufacturing an organic deposition mask according to a third embodiment of the present invention.
  • FIG. 16 is a flowchart showing a method of manufacturing an organic deposition mask according to a fourth embodiment of the present invention
  • FIG. 17 is a view schematically showing one form of a method of manufacturing an organic deposition mask according to a fourth embodiment of the present invention
  • 18 is a view schematically showing an organic deposition mask manufactured by a method of manufacturing an organic deposition mask according to a fourth embodiment of the present invention.
  • FIG. 19 is a view schematically showing a multi-array electrode in which a protruding electrode unit is arranged according to an embodiment of the present invention.
  • 20 is a flowchart illustrating a method of manufacturing a multi-array electrode in which a protruding electrode unit is arranged according to an embodiment of the present invention.
  • 21 is a diagram schematically showing a state in which a pattern region is formed on a substrate after the step of forming a pattern region according to an embodiment of the present invention.
  • FIG. 22 to 24 are views for explaining a step of forming a protrusion according to an embodiment of the present invention
  • FIG. 22 schematically shows a form of a first etching step of the step of forming a protrusion according to an embodiment of the present invention
  • 23 is a view schematically showing a state in which a protrusion is formed on a substrate after the first etching step according to FIG. 22,
  • FIG. 24 is a substrate after a second etching step of the protrusion forming step according to an embodiment of the present invention It is a diagram schematically showing a state in which a protrusion having an inclined surface is formed.
  • 25 is a view schematically showing a state in which a plating layer is formed on a substrate on which a protrusion is formed after the plating layer forming step according to an embodiment of the present invention.
  • FIG. 26 and 27 are views for explaining an insulating film forming step according to an embodiment of the present invention
  • Figure 26 is an insulating layer on the substrate after the insulating layer forming step of the insulating film forming step according to an embodiment of the present invention It is a diagram schematically showing a formed state
  • FIG. 27 is a diagram schematically showing one form of an insulating layer removal step of an insulating film forming step according to an embodiment of the present invention.
  • first and second may be used to describe a component, but the components are not limited to the above terms, and are used only to distinguish one component from another component.
  • each layer (film), region, pattern, or structure may be modified for clarity and convenience of description, and thus does not entirely reflect the actual size.
  • each layer (film), region, pattern, or structure is a substrate, each layer (film), region, pad, or “over”, “on” or “down” of the pads or patterns.
  • “over”, “on” and “under” are “directly” or “indirectly through another layer” ) "Includes everything that is formed.
  • ⁇ on means that it is located above or below the target member, and does not necessarily mean that it is located above the gravity direction.
  • the organic deposition mask refers to a thin plate having a deposition opening for forming an organic thin film pattern on an organic deposition surface in an OLED (Organic Light Emitting Diode) manufacturing process, in the manufacturing process of an organic light emitting display device It may be a fine metal mask (FMM) configured to form pixels on a display substrate, but the scope of the present invention is not limited thereto.
  • OLED Organic Light Emitting Diode
  • FMM fine metal mask
  • FIG. 1 is a view schematically showing an organic deposition mask according to an embodiment of the present invention.
  • a deposition opening 14 pattern is formed on the thin plate 11.
  • the thin plate 11 may be an invar sheet.
  • the invar material is an alloy formed of Fe 64% and Ni 36%, and has a very small coefficient of thermal expansion, and the thickness of the thin plate 10 made of the invar material may be approximately 20 ⁇ m.
  • the deposition opening 14 is a passage through which organic molecules sublimated in the deposition source in the deposition process toward the deposition target, and is formed on one surface 12 of the thin plate 11 to face the deposition source 15 And, it is formed on the opposite surface 13 of the thin plate 11 to be in communication with the first opening 15 may be made of a second opening 16 facing the deposition target.
  • the pattern of the deposition opening 14 may be the same pattern as a thin film to be formed on the organic deposition surface.
  • the pattern of the deposition opening 14 may be a pixel pattern to be formed on the substrate in the manufacturing process of the organic light emitting display device, and the size of the second opening 16 is a sub-pixel to be formed on the substrate It can be the size of.
  • the cross-sectional shape of the deposition opening 14, in particular, the cross-sectional shape of the second opening 16 is the same as the shape of the sub-pixel to be formed on the substrate, that is, the shape according to the shape of the pixel of the organic light emitting display device. As such, it may be formed in various shapes such as a circle and a rectangle.
  • the pattern of the deposition openings 14 may be a pattern in which a plurality of deposition openings 14 are arranged at regular intervals.
  • the width of the first opening 15 may be formed larger than the width of the second opening 16. This is to prevent the deposition film from being formed unevenly due to a limited incidence angle during the deposition process of the organic light emitting material through the deposition opening 14.
  • FIGS. 3 to 6 are views for explaining a process of manufacturing the organic deposition mask according to the first embodiment of the present invention admit.
  • a method for manufacturing an organic deposition mask according to a first embodiment of the present invention is a first opening forming step of forming a first opening 15 on one surface 12 of the thin plate 11 It may include (S11) and a second opening forming step (S12) of forming a second opening 16 to communicate with the first opening 15 on the opposite surface 13 of the thin plate 11.
  • the first opening 15 may be formed by an etching method.
  • the pattern area forming step (S13) of forming the pattern area 17 on one surface 12 of the thin plate 11 and the pattern area 17 are predetermined.
  • An etching step (S14) of etching the thickness to form a first opening 15 on one surface 12 of the thin plate 11 may be included.
  • FIG 3 is a view schematically showing a state in which a pattern region is formed on a thin plate.
  • a pattern region 17 may be formed using a photoresist 18.
  • the photoresist 18 is a material that causes chemical changes when irradiated with light, and is a negative type that becomes insoluble in chemicals by being exposed to light and, conversely, a positive type that becomes soluble in chemicals by being exposed to light. type).
  • the photoresist 18 is applied to one surface 12 of the thin plate 11, and the photomask on which the pattern region 17 is formed is placed on the photoresist 18 to make light.
  • a pattern region 17 can be formed on one surface 12 of the thin plate 11 coated with the photoresist 18.
  • the photoresist 18 is a negative type, only the portion except for the pattern area 17 is left through the development step, and if the photoresist 18 is a positive type, only the pattern area 17 is left through the development step. .
  • a negative type photoresist 18 may be used.
  • the pattern region 17 is formed using the photoresist 18, but the present invention is not limited thereto, and for example, the pattern region 17 is formed using a dry film (DFR). It is possible, and the present invention is not limited by the method of forming the pattern region 17.
  • DFR dry film
  • FIG. 4 is a view schematically showing a state in which a first opening is formed by wet etching on a thin plate.
  • the first opening 15 may be formed in the pattern region 17 formed on one surface 12 of the thin plate 11 using wet etching.
  • the wet etching method is a method of selectively dissolving and etching only a portion that needs to be removed by using a soluble chemical. Since the wet etching method is isotropic etching, as shown in FIG. 4, the pattern region 17 is The upper portion of the photoresist 18 to be formed is etched together, so that the etching can be performed wider than the width of the pattern region 17.
  • the wet etching method may be performed by immersing the thin plate 11 in which the pattern region 17 is formed in a soluble chemical, in which case the thin plate 11 is prevented from being etched on the opposite side 13 of the thin plate 11.
  • the photoresist 18 can also be applied to the entire opposite side 13 of 11).
  • FIG. 5 is a view schematically showing a state in which the photoresist is removed in FIG. 4.
  • a first opening 15 having a substantially semicircular shape with a wide width of a predetermined depth may be formed on one surface of the thin plate 11.
  • FIG. 6 is a view schematically showing one form of the step of forming the second opening.
  • the second opening portion forming step (S12) is an electrolytic processing using the second multi-array electrode 20 in which the second protruding electrode portion 30 is arranged, and the opposite side 13 of the thin plate 11.
  • a second opening 16 may be formed to communicate with the first opening 15.
  • Electrochemical machining refers to a method of processing while removing metal gas, which is generated at the cathode and metal oxide, which are anode products, which interfere with its progress when the metal material is electrochemically dissolved.
  • an electrode made in a form to be processed is used as a cathode, and an object is formed as an anode, an appropriate gap is formed between each opposing surface and the surface, immersed in an electrolyte, and current is applied. Can be processed together.
  • the first opening 15 is formed by wet etching, and the second opening 16 is arranged by the second protrusion electrode 30. It is to be formed by electrolytic processing using the second multi-array electrode 20.
  • the first opening 15 is an opening opposed to the evaporation source, and it is necessary to form it at a high speed to have a large width and depth compared to the second opening 16, while the second opening 16 is deposited
  • a pattern such as a thin film to be formed directly on an organic deposition surface is formed, and thus it is necessary to form finely and precisely.
  • the width and depth of the first opening 16 are rapidly opened using the wet etching of the first opening 15 to the second opening. It is formed to be larger than the width and depth of (16), and the second opening 16 is finely and precisely formed using the second multiple array electrode 20 in which the second protruding electrode unit 30 is arranged.
  • the second multi-array electrode 20 is placed on the opposite surface 13 of the thin plate 11 such that the second protruding electrode 30 faces the first opening 15.
  • the second opening 16 is formed to communicate with the first opening 15 on the opposite surface 13 of the thin plate 11 by applying power to the thin plate 11 and the second projecting electrode portion 30.
  • Electrolytic processing step (S16) may be included.
  • the thin plate 11 on which the first opening 15 is formed and the second protruding electrode 30 are placed in a processing tank 19 filled with an electrolyte. It may be performed by immersing them in a state in which they are arranged at appropriate intervals from each other, and applying power through a power supply unit while the second projecting electrode unit 30 is electrically connected to the thin plate 11.
  • the second opening 16 communicating with the first opening 15 may be formed while being processed like the cross-sectional shape of the second protruding electrode 30 facing the 13.
  • the cross-sectional shape of the second protruding electrode portion 30 may have a shape substantially equal to the cross-sectional shape of the second opening portion 16 to be formed. That is, the cross-sectional shape of the second protruding electrode portion 30 may have the same shape as the thin film to be formed on the organic deposition surface.
  • the cross-sectional shape of the second protruding electrode unit 30 is the shape of the sub-pixel to be formed on the substrate in the manufacturing process of the organic light emitting display device, that is, the shape according to the shape of the pixel of the organic light emitting display device. It is the same, and may be formed in various shapes such as a circle and a rectangle.
  • the spacing between the second protruding electrode portions 30 arranged on the second multi-array electrode 20 is the spacing between the second openings 16 arranged on the opposite side 13 of the thin plate 11.
  • the second opening 16 can be formed on the opposite side 13 of the thin plate 11 by the second protruding electrode 30. .
  • the second protruding electrode unit 30 may have an inclined surface 34 so that the width becomes narrower toward the end, and accordingly, the second protruding electrode unit 30 may be formed in a substantially tapered shape.
  • FIG. 7 is a partial plan view schematically illustrating a second multi-array electrode according to an embodiment of the present invention
  • FIG. 8 is a schematic A-A sectional view of FIG. 7.
  • the second multi-array electrode 20 includes a second protrusion 21 arranged on the second substrate 21 and the second substrate 21 on one surface 22 ( 25) and the second plating layer 27 formed on the surface of the second substrate 21.
  • the second protruding electrode part 30 may be the second plating layer 27 formed on the surface of the second protruding part 25.
  • the second substrate 21 may be a silicon wafer (Si wafer). Then, the second substrate 21 may have excellent flatness, and a plurality of second protrusions 25 for electrolytic processing on the second substrate 21 may be processed into a very fine shape.
  • the second protruding portion 25 is configured to form a skeleton of the second protruding electrode portion 30, and may have the same shape as the second protruding electrode portion 30, and also the second protruding electrode portion 30 ).
  • the second protrusion 25 may have an inclined surface 26 so that the width becomes narrower toward the end, and accordingly, the second protrusion 25 may have a tapered shape.
  • the pattern of the second protrusions 25 arranged on the second substrate 21 may be the same pattern as the pattern of the second openings 16, that is, the thin film pattern to be formed on the organic deposition surface.
  • the spacing in which the second protrusions 25 are arranged on the second substrate 21 may be the same as the spacing in which the second openings 16 are arranged on the opposite surface 13 of the thin plate 11.
  • the pattern of the second protrusion 25 may be a pixel pattern to be formed on the substrate in the manufacturing process of the organic light emitting display device, and the second protrusion 25 is arranged on the second substrate 21
  • the interval may be an interval between sub-pixels to be formed on the substrate in the manufacturing process of the organic light emitting display device.
  • the present invention is not limited thereto, and the cross-sectional shape of the second protrusion 25 is the second opening 16 to be formed. It may have a shape substantially the same as the cross-sectional shape of. That is, the cross-sectional shape of the second protrusion 25 may have the same shape as the thin film to be formed on the organic deposition surface.
  • the cross-sectional shape of the second protrusion 25 is the same as the shape of the sub-pixel to be formed on the substrate in the manufacturing process of the organic light emitting display device, that is, the shape of the pixel of the organic light emitting display device. , It can be made in a variety of shapes, such as circular, rectangular.
  • the vertical cross section of the second protrusion 25 is shown in a substantially trapezoidal shape in the drawing, the present invention is not limited thereto, and may be formed in a shape of a pointed horn such as a square pyramid or a cone.
  • the second multi-array electrode 20 may further include a second insulating layer 28 formed between the second protruding electrode parts 30. This is to prevent current spreading when current is applied to the second projecting electrode unit 30 in the second electrolytic processing step S16.
  • the second plating layer 27 is the entire surface of the second substrate 21, that is, the one surface 22 and the opposite surface 23 of the second substrate 21, the surface of the second protrusion 25, the second substrate 21 ) May be formed on the entire side 24.
  • all the second protruding electrode parts 30 and the opposite surfaces 23 of the second substrate 21 may be electrically connected to each other through the second plating layer 27, and accordingly, the second electrolyte
  • the application of the current to the second projecting electrode unit 30 is the opposite surface 23 of the one surface 22 of the second substrate 21 in which the second projecting electrode unit 30 is arranged.
  • Current can be applied to the entire second protruding electrode unit 30.
  • FIGS. 10 to 13 are views for explaining a process of a method of manufacturing an organic deposition mask according to a second embodiment of the present invention .
  • the first opening forming step (S21) is similar to the second opening forming step (S22) other than the etching method.
  • the first opening 15 may be formed using electrolytic processing.
  • FIG. 10 is a view schematically showing one form of the first opening forming step according to the second embodiment of the present invention
  • FIG. 11 schematically shows a thin plate formed after the first opening forming step according to the second embodiment of the present invention It is a figure to show.
  • the first multi-array electrode 40 in which the first protruding electrode parts 50 are arranged is thin plated ( In the state in which the first multi-array electrode alignment step (S23) of arranging in a state spaced apart at a predetermined interval on one surface 12 of 11), and the thin plate 11 and the first projecting electrode part 50 are immersed in the electrolyte solution A first electrolytic step (S24) of forming the first opening 15 on one surface 12 of the thin plate 11 by applying power to the thin plate 11 and the first projecting electrode portion 50 is performed. It can contain.
  • the first opening portion forming step (S21) is a state in which the thin plate 11 and the first projecting electrode portion 50 are arranged at appropriate intervals from each other in a processing tank 19 filled with an electrolyte. It can be done by immersing in, and applying the power through the power supply unit in a state where the first projecting electrode unit 30 is electrically connected to the thin plate 11.
  • the first opening 15 may be formed while being processed like the cross-sectional shape of the first protruding electrode 50 facing.
  • the cross-sectional shape of the first protruding electrode portion 50 may have a shape substantially the same as the cross-sectional shape of the first opening 15 to be formed.
  • the spacing between the first protruding electrode parts 50 arranged in the first multi-array electrode 40 is equal to the spacing between the first opening parts 15 arranged on one surface 12 of the thin plate 11. It can be the same.
  • the first protruding electrode unit 50 may have an inclined surface 54 such that the width becomes narrower toward the end, and accordingly, the first protruding electrode unit 50 may be formed in a substantially tapered shape.
  • the first opening portion 15 is one surface of the thin plate 11 by the first projecting electrode portion 50 having the tapered shape ( A first opening 15 having an approximately tapered shape in which the entrance is wider and narrower in width may be formed in 12).
  • FIG. 12 is a view schematically showing one form of a step of forming a second opening according to a second embodiment of the present invention.
  • the second protruding electrode portion 20 is provided with the second protruding electrode portion 30 and the first opening portion 15.
  • a second electrolytic processing step S26 of forming the second opening 16 to communicate with the opening 15 may be included.
  • the second opening forming step (S22) according to the second embodiment of the present invention is substantially the same as the second opening forming step (S12) according to the first embodiment, detailed descriptions thereof are given in the first embodiment. Use the detailed description of.
  • the organic deposition mask manufacturing method (S20) according to the second embodiment of the present invention compared to the organic deposition mask manufacturing method (S10) according to the first embodiment, the first opening forming step ( The difference in that S21) is formed by using electrolytic processing using the first multi-array electrode 40 in which the first protruding electrode portion 50 is arranged, as in the step of forming the second opening portion (S22) rather than the etching method. have.
  • FIG. 13 is a view schematically showing an organic deposition mask manufactured by a method for manufacturing an organic deposition mask according to a second embodiment of the present invention.
  • the organic deposition mask 55 manufactured by the organic deposition mask manufacturing method according to the second embodiment of the present invention the organic prepared by the organic deposition mask manufacturing method according to the first embodiment
  • the inlet width of the first opening 15 can be reduced, the interval between the deposition openings 14 can be reduced, and accordingly, high in the organic light emitting display device. Resolution can be achieved.
  • a specific configuration of the first multi-array electrode 40 and the first protruding electrode part 50 is substantially the same as the configuration of the second multi-array electrode 20 and the second protruding electrode part 30. It can be done.
  • the first multi-array electrode 40 has a first substrate 41, first protrusions 45 and first substrates 41 arranged on one surface 42 of the first substrate 41. It may include a first plating layer 47 formed on.
  • the first protruding electrode part 50 may be the first plating layer 47 formed on the surface of the first protruding part 45.
  • the first substrate 21 may be a silicon wafer (Si wafer).
  • the first protruding portion 45 is configured to form a skeleton of the first protruding electrode portion 50, and may have the same shape as the first protruding electrode portion 50, and also the first protruding electrode portion 50 ) May be formed in the same manner as the arrangement pattern.
  • the first protrusion 45 may have an inclined surface 46 so that the width becomes narrower toward the end, and accordingly, the first protrusion 25 may have a tapered shape.
  • the pattern of the first protrusion 45 arranged on the first substrate 41 may be the same pattern as the pattern of the first opening 15, so that the first protrusion 45 is the first substrate
  • the spacing arranged on the 41 may be the same as the spacing at which the first opening 15 is arranged on one surface 12 of the thin plate 11.
  • the cross-sectional shape of the first protrusion 45 may have a shape substantially the same as the cross-sectional shape of the first opening 15 to be formed, and in the drawing, the vertical cross-section of the first protrusion 45 is approximately trapezoidal. Although shown in a shape, the present invention is not limited thereto, and may be formed in a shape of a pointed horn such as a square pyramid or a cone.
  • the first multi-array electrode 40 may further include a first insulating film 48 formed between the first protruding electrode parts 50, and the first plating layer 47 may include a first substrate 41 ) The entire surface, that is, one surface 42 and the opposite surface 43 of the first substrate 41, the surface of the first protrusion 45, and the entire surface 44 of the first substrate 41 may be formed.
  • the application of the current to the first protruding electrode part 50 is the opposite surface 43 of the one surface 42 of the first substrate 41 in which the first protruding electrode part 50 is arranged.
  • Current can be applied to the entire first protruding electrode unit 50.
  • each configuration of the first multi-array electrode 40 is substantially the same as that of the second multi-array electrode 20, detailed descriptions of each configuration of the first multi-array electrode 40 are described in 2 The detailed description of each configuration of the multi-array electrode 20 is used.
  • the size of the first protruding electrode unit 50 may be larger than the size of the second protruding electrode unit 30.
  • the width or / and height of the first protruding electrode unit 50 may be formed to be larger than the width or / and height of the second protruding electrode unit 30.
  • the time for forming the first opening 15 by the first projecting electrode 50 be shortened, but also the size of the first opening 15 can be made larger than the size of the second opening 16. Can be.
  • the current intensity applied to the first projecting electrode unit 50 in the first electrolytic processing step (S24) is applied to the second projecting electrode unit 30 in the second electrolytic processing step (S26). It may be greater than the current intensity.
  • the forming time of the first opening 15 can be shortened. This is because even if the size of the first projecting electrode unit 50 and the size of the second projecting electrode unit 30 are the same, if the current intensity applied increases, the processing precision may decrease while the processing speed may increase.
  • the size of the first projecting electrode portion 50 is larger than the size of the second projecting electrode portion 30, and at the same time, the first projecting electrode portion 50 in the first electrolytic processing step (S24).
  • the current intensity applied to the second electrolytic processing step (S26) may be greater than the current intensity applied to the second protruding electrode unit 30 in the step S26.
  • FIG. 14 is a flowchart showing a method of manufacturing an organic deposition mask according to a third embodiment of the present invention
  • FIG. 15 is a view schematically showing one form of a method of manufacturing an organic deposition mask according to a third embodiment of the present invention.
  • the first multi-array electrode 40 is arranged at a predetermined distance from one surface 12 of the thin plate 11, and the second multi-array is arranged.
  • the first and second electrodes 20 are arranged to be spaced apart at predetermined intervals on the opposite surface 13 of the thin plate 11 so that the second projecting electrode unit 30 faces the first projecting electrode unit 50.
  • the opposite surface 13 may include an electrolytic processing step S34 of simultaneously forming the first opening 15 and the second opening 16.
  • the manufacturing time of the organic deposition mask 55 shown in FIG. 13 can be significantly reduced.
  • each of the first protrusion electrode part 50 and the second protrusion electrode part 30 has an electrolyte solution.
  • the thin plate 11 is immersed in a state in which the thin plates 11 are interposed at appropriate intervals, and the first projecting electrode part 50 and the second projecting electrode part 30 are immersed in the filled processing tank 19. It may be performed by applying power through the power supply unit in a state in which the thin plate 11 is electrically connected.
  • the first protruding electrode part 50 and the second protruding electrode part 30 are used as the cathode, and the thin plate 11 is used as the anode, power is applied, and one surface 12 of the thin plate 11 is applied.
  • the second opening 16 may be formed while being processed like the cross-sectional shape of the second protruding electrode portion 30 facing the opposite surface 13 of the thin plate 110.
  • the size of the first protrusion electrode part 50 may be formed larger than the size of the second protrusion electrode part 30, and applied to the first protrusion electrode part 50 Losing current strength may be greater than the current strength applied to the second projecting electrode unit 30, as described above, and detailed descriptions thereof will be used in the detailed description of the second embodiment.
  • the sizes of the first protruding electrode part 50 and the second protruding electrode part 30 are different from each other, or the first protruding electrode part
  • the sizes of the first protruding electrode part 50 and the second protruding electrode part 30 are different from each other, or the first protruding electrode part
  • FIG. 16 is a flowchart showing a method of manufacturing an organic deposition mask according to a fourth embodiment of the present invention
  • FIG. 17 is a view schematically showing one form of a method of manufacturing an organic deposition mask according to a fourth embodiment of the present invention
  • 18 is a view schematically showing an organic deposition mask manufactured by a method of manufacturing an organic deposition mask according to a fourth embodiment of the present invention.
  • the method of manufacturing an organic deposition mask according to a fourth embodiment of the present invention is a thin plate by electrolytic processing using a multi-array electrode 60 in which the protruding electrode portion 70 is arranged ( 11) may include a step of forming a deposition opening (S42) to form a deposition opening 74.
  • the deposition opening forming step (S42) is a multi-array electrode alignment step (S44) for aligning the multi-array electrode 60 in a state spaced a predetermined distance from one surface 12 of the thin plate 11, and the thin plate 11 and It may include an electrolytic processing step (S45) to form a deposition opening 74 by applying power to the thin plate 11 and the protruding electrode portion 70 in the state where the protruding electrode portion 70 is immersed in the electrolyte solution. have.
  • the thin plate 11 and the protruding electrode portion 70 are spaced apart from each other in a processing tank 19 filled with an electrolyte. And immersed in an aligned state, and may be performed by applying power through a power supply unit in a state where the projecting electrode unit 70 is electrically connected to the thin plate 11.
  • one deposition opening 74 may be formed.
  • the configuration of the multi-array electrode 60 and the protruding electrode portion 70 is the same as the configuration of the first and second multi-array electrodes 20 and 40 and the first and second protruding electrode portions 30 and 50 in the above embodiments. Since it is substantially the same, the detailed description thereof is used in the detailed description in the above embodiments.
  • the organic deposition mask 77 manufactured by the manufacturing method S40 according to the fourth embodiment of the present invention is formed by a protruding electrode portion 70 having a substantially tapered cross section.
  • a deposition opening 74 having an approximately tapered shape with a wider entrance and a narrower width may be formed on the substrate 11.
  • the protruding electrode unit 70 is arranged
  • the deposition opening 74 is formed by one electrolytic processing using the single multi-array electrode 60, and may be applied when the thickness of the thin plate 11 is very thin.
  • a multi-array electrode in which a protruding electrode portion is arranged Before explaining a method of manufacturing a multi-array electrode according to an embodiment of the present invention, a multi-array electrode in which a protruding electrode portion is arranged will be described first.
  • the multi-array electrode according to an embodiment of the present invention may be used in the production of an organic deposition mask having a fine deposition opening because it has a structure in which protruding electrode portions capable of precisely processing fine holes are arranged.
  • the multi-array electrode according to an embodiment of the present invention may be made of a structure in which dozens to millions of vertically projecting electrode parts capable of processing microscale pitch holes are arranged at regular intervals.
  • an organic deposition mask used for OLED manufacturing is manufactured by electrolytic processing using a multi-array electrode, it is possible to manufacture an organic deposition mask capable of realizing a resolution of 600 ppi or higher.
  • the multi-array electrode according to an embodiment of the present invention is not limited to those used for manufacturing organic deposition masks, and can be widely used in numerous electronic components such as photovoltaic cells and thermoelectric devices.
  • FIG. 19 is a view schematically showing a multi-array electrode in which a protruding electrode unit is arranged according to an embodiment of the present invention.
  • the multi-array electrode 100 may have substantially the same configuration as the second multi-array electrode 20 (see FIGS. 7 and 8).
  • the multi-array electrode 100 in which the protruding electrode portions 110 are arranged according to an embodiment of the present invention includes a substrate 101, a protruding portion 105 and a substrate 101 arranged on one surface 102 of the substrate 101. ) May include a plating layer 107 formed on the surface, and the protruding electrode portion 110 may be a plated layer 107 formed on the surface of the protruding portion 105.
  • the substrate 101 may be a silicon wafer (Si wafer), the protrusion 105 is configured to form a skeleton of the protrusion electrode 110, it may have the same shape as the protrusion electrode 110, , It may be formed in the same manner as the arrangement pattern of the protruding electrode portion (110).
  • Si wafer silicon wafer
  • the protrusion 105 is configured to form a skeleton of the protrusion electrode 110, it may have the same shape as the protrusion electrode 110, , It may be formed in the same manner as the arrangement pattern of the protruding electrode portion (110).
  • the protrusion 105 may have an inclined surface 106 so that the width becomes narrower toward the end, and accordingly, the protrusion 105 may have a tapered shape.
  • the horizontal cross-sectional shape of the protruding portion 105 may be formed in various shapes such as a circular shape, a rectangular shape, and the drawings show that the vertical cross-section of the protruding portion 105 has a substantially trapezoidal shape, but the present invention is not limited thereto.
  • the vertical cross-sectional shape of the protrusion 105 may be formed in a shape of a pointed horn, such as a square pyramid or a cone.
  • the tip has a sharp shape, so that the current is concentrated during electrolytic processing to increase processing precision.
  • the multi-array electrode 100 may further include an insulating film 108 formed between the protruding electrode parts 110, and thus the rest of the protruding electrode parts 110 are excluded.
  • the insulating film 108 is formed on the portion, precise hole processing may be possible by preventing current spread in regions other than the protruding electrode portion 110.
  • the plating layer 107 is the entire surface of the substrate 101, that is, one surface 102 and the opposite surface 103 of the substrate 101, the surface of the protrusion 105, the entire surface 104 of the substrate 101 Can be formed.
  • all of the arranged protruding electrode parts 110 and the opposite surfaces 103 of the substrate 101 can be electrically connected to each other through the plating layer 107, so that the protruding electrode part 110 during electrolytic processing
  • the current may be applied to the entire protruding electrode portion 110 through the opposite surface 103 of one surface 102 of the substrate 101 on which the protruding electrode portion 110 is arranged.
  • FIGS. 21 to 27 are a multi-array electrode in which a protruding electrode part is arranged according to an embodiment of the present invention.
  • the drawings are for explaining the manufacturing method process.
  • a method (S100) of manufacturing a multi-array electrode in which a protruding electrode part is arranged according to an embodiment of the present invention includes a pattern region forming step (S101), a protrusion forming step (S102), and a plating layer forming step. (S103) and an insulating film forming step (S104).
  • the pattern region forming step (S101) is a step of forming a pattern region 120 for forming the protruding electrode portion 110 on one surface 102 of the substrate 101, and the step of forming the protruding portion (S102)
  • the forming step (S103) is a step of forming a plating layer 107 on the surface of the substrate 101
  • the insulating film forming step (S104) is a step of forming an insulating film 108 between the protruding electrode parts 110.
  • 21 is a diagram schematically showing a state in which a pattern region is formed on a substrate after the step of forming a pattern region according to an embodiment of the present invention.
  • the pattern region forming step (S101) is performed before the lithography process for forming the protrusion 105 on the silicon wafer substrate 101 having excellent flatness and easy handling.
  • a pattern region 120 may be formed using a photoresist (125).
  • the photoresist 125 is applied to one surface 102 of the substrate 101, and the photomask on which the pattern region 120 is formed is placed on the photoresist 125 to make light.
  • a pattern region 120 may be formed on one surface 102 of the substrate 101 coated with the photoresist 125.
  • the photoresist 125 is a negative type, only the portion except for the pattern region 120 is left through the development step. If the photoresist 125 is a positive type, only the pattern region 125 is left through the development step. .
  • a positive type photoresist 125 may be used.
  • the pattern region 120 is formed using the photoresist 125, but the present invention is not limited thereto, and for example, the pattern region 120 is formed using a dry film (DFR). It is possible, and the present invention is not limited by the method of forming the pattern region 120.
  • DFR dry film
  • FIG. 22 to 24 are views for explaining a step of forming a protrusion according to an embodiment of the present invention
  • FIG. 22 schematically shows a form of a first etching step of the step of forming a protrusion according to an embodiment of the present invention
  • 23 is a view schematically showing a state in which a protrusion is formed on a substrate after the first etching step according to FIG. 22,
  • FIG. 24 is a substrate after a second etching step of the protrusion forming step according to an embodiment of the present invention It is a diagram schematically showing a state in which a protrusion having an inclined surface is formed.
  • an area other than the pattern area 120 is etched to form the protrusions 105 in the pattern area 120.
  • the primary etching step is a step for forming a protrusion 105 having a large aspect ratio (approximately an aspect ratio of 5: 1 or more) in the pattern region 120 to form the protrusion electrode portion 110, and electrochemical etching (electrochemical etching) can be used.
  • FIG. 22 is a view schematically showing a state in which a protrusion is formed by an electrochemical etching method, which is a form of a first etching step according to an embodiment of the present invention.
  • the electrochemical etching method which is one form of the first etching step according to an embodiment of the present invention, immerses the substrate 101 in which the pattern region 120 is formed in the electrolyte solution 127, It may be performed by applying power through the electrode 128 in a state where the opposite surface 103 of one surface 102 of the substrate 101 on which the pattern region 120 is formed is bonded to the electrode 128.
  • the electrolyte solution a solution in which hydrofluoric acid (HF), ethanol, cetyltrimedylammonium chloride (CTAC) solution, or deionized water was added may be used, and the temperature of the electrolyte solution is maintained at approximately 25 ° C, and the An AL thin film may be used as the electrode 128.
  • HF hydrofluoric acid
  • CAC cetyltrimedylammonium chloride
  • a protrusion 105 having a large aspect ratio may be formed on the substrate 101.
  • the structure of the protrusion 105 is the shape and pitch spacing of the protrusion 105 is determined when the photoresist 125 in the pattern region forming step (S101) is patterned, the current of the electrochemical etching
  • the diameter and height of the protrusion 105 can be controlled according to the density.
  • the protrusion 105 formed after the electrochemical etching a protrusion 105 having a vertical structure is illustrated, but the protrusion 105 formed after the electrochemical etching necessarily has a vertical structure. No, an inclined surface may be formed on the side surface, and the present invention is not limited thereto.
  • the first etching step may use a dry etching method.
  • the dry etching method does not use a soluble chemical, and exposes a reactive gas in the plasma to etch a target material that needs to be removed into a volatile gas to etch.
  • the dry etching method is anisotropic etching, as shown in FIG. 23.
  • the lower portion of the photoresist 125 forming the pattern region 120 is not etched, and the same width as the width of the pattern region 120 can be etched, so that the width of the pattern region 120 is constant. It can be formed to form a protrusion 105 having a large aspect ratio.
  • the second etching step may use a wet etching method.
  • the wet etching may be a potassium hydroxide (KOH) aqueous solution.
  • the protrusion 105 having a large aspect ratio is inclined like a pyramid shape and has a sharp tip over time.
  • an inclined surface 106 may be formed on the side surface of the protrusion portion 105 having a large aspect ratio, and accordingly, the protrusion portion 105 may be formed in an approximately tapered shape that becomes narrower toward the end. .
  • the shape of the protrusion 105 may be formed in a pointed horn shape (Cone).
  • the second etching step may be performed after removing the photoresist 125 after the first etching step.
  • 25 is a view schematically showing a state in which a plating layer is formed on a substrate on which a protrusion is formed after the plating layer forming step according to an embodiment of the present invention.
  • the protruding portion 105 performs a function as the protruding electrode portion 110, the protruding portion 105 )
  • a plating layer 107 may be formed on the surface of the protrusion 105.
  • the plating layer forming step (S103) is a step of forming the plating layer 107 on the surface of the protruding portion 105 to form the protruding electrode portion 110.
  • the entire surface of the substrate 101 that is, one surface 102, the opposite surface 104, and the side surface of the substrate 101, so that the entire substrate 101 functions as an electrode. 104) and the plating layer 107 may be formed on the protrusion 105 surface.
  • the substrate 101 A metal having good conductivity can be smoothly formed on the phase.
  • FIG. 26 and 27 are views for explaining an insulating film forming step according to an embodiment of the present invention
  • Figure 26 is an insulating layer on the substrate after the insulating layer forming step of the insulating film forming step according to an embodiment of the present invention It is a diagram schematically showing a formed state
  • FIG. 27 is a diagram schematically showing one form of an insulating layer removal step of an insulating film forming step according to an embodiment of the present invention.
  • the insulating film forming step (S104) in order to prevent current diffusion during electrolytic processing to increase processing precision and efficiency, the plating layer forming step (S103) after the whole Is a step of insulating the remaining portion of the substrate 101 having conductivity except for the end portion of the protruding electrode portion 110, wherein the insulating layer 109 is formed on one surface 102 of the substrate 101 on which the protruding electrode portion 110 is formed. ), And an insulating layer removing step of removing the insulating layer formed at the end of the protruding electrode portion 110.
  • an insulating layer 109 is formed on one surface 102 of the substrate 101 on which the protruding electrode portion 110 is formed.
  • the insulating layer 109 may be made of silicon oxide (SiO 2 ) or silicon nitride (SiN).
  • the removing of the insulating layer is for removing the insulating layer only up to an end region of the protruding electrode portion 110 among the insulating layers 109 formed on one surface 102 of the substrate 101. By soaking in solution 129, it can be performed.
  • an aqueous solution of hydrofluoric acid (HF) or phosphoric acid (H3PO4) may be used as the solution 129 for removing the insulating layer.
  • the multi-array electrode 100 according to FIG. 19 can be manufactured.
  • one surface 102 of the substrate 101 becomes an electrode portion on which the protruding electrode portion 110 is formed, and the substrate 101
  • the opposite surface 103 may have a structure composed of a power supply unit having a plating layer 107 for supplying power to the protruding electrode unit 110.
  • the present invention relates to a method for manufacturing an organic deposition mask of a new method capable of forming a fine deposition opening on a thin plate by electrolytic processing using a multi-array electrode in which a protruding electrode is arranged, and the embodiments are various in form. It will be possible to change to. Therefore, the present invention is not limited by the embodiments disclosed in the present specification, and all forms that can be changed by those skilled in the art to which the present invention pertains will also belong to the scope of the present invention.

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Abstract

La présente invention concerne un procédé de fabrication d'un masque de dépôt organique utilisé pendant un processus de fabrication de diodes électroluminescentes organiques (OLED) et, plus particulièrement, un nouveau type de procédé de fabrication de masque de dépôt organique dans lequel une ouverture de dépôt mince peut être formée dans une plaque mince, par usinage électrochimique, à l'aide d'une électrode à réseaux multiples ayant des parties d'électrode en saillie disposées sur celle-ci. Un procédé de fabrication de masque de dépôt organique selon un mode de réalisation de la présente invention peut être un procédé de fabrication d'un masque de dépôt organique présentant une ouverture de dépôt formée à l'intérieur de celui-ci, l'ouverture de dépôt comprenant une première ouverture faisant face à une source de dépôt et une seconde ouverture faisant face à une cible de dépôt. Le procédé peut comprendre : une première étape de formation d'ouverture consistant à former la première ouverture à travers une surface d'une plaque mince; et une seconde étape de formation d'ouverture consistant à former la seconde ouverture à travers la surface opposée de la plaque mince de façon à communiquer avec la première partie d'ouverture, par usinage électrochimique, à l'aide d'une seconde électrode à réseaux multiples ayant des secondes parties d'électrode en saillie disposées sur celle-ci.
PCT/KR2019/013254 2018-11-13 2019-10-10 Électrode à réseaux multiples ayant des parties d'électrode en saillie disposées sur celle-ci, son procédé de fabrication, et procédé de fabrication de masque de dépôt organique à l'aide d'une électrode à réseaux multiples WO2020101180A1 (fr)

Applications Claiming Priority (4)

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KR1020180139454A KR102109037B1 (ko) 2018-11-13 2018-11-13 다중배열전극을 이용한 유기 증착 마스크 제조 방법
KR1020180139455A KR102075064B1 (ko) 2018-11-13 2018-11-13 돌출전극부가 배열된 다중배열전극 및 이를 제조하는 방법
KR10-2018-0139454 2018-11-13
KR10-2018-0139455 2018-11-13

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JP2005523172A (ja) * 2002-04-25 2005-08-04 ウルトラ システムズ リミテッド 金属製物品の形状加工
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KR20080099233A (ko) * 2005-11-18 2008-11-12 레플리서러스 테크놀로지스 에이비 마스터 전극 및 마스터 전극 형성 방법
KR20150035057A (ko) * 2013-09-27 2015-04-06 이엘케이 주식회사 디스플레이 패널의 제조방법

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