WO2020087934A1 - Dielectric resonance block, dielectric waveguide filter, and coupling structure thereof - Google Patents

Dielectric resonance block, dielectric waveguide filter, and coupling structure thereof Download PDF

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Publication number
WO2020087934A1
WO2020087934A1 PCT/CN2019/090794 CN2019090794W WO2020087934A1 WO 2020087934 A1 WO2020087934 A1 WO 2020087934A1 CN 2019090794 W CN2019090794 W CN 2019090794W WO 2020087934 A1 WO2020087934 A1 WO 2020087934A1
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dielectric
coupling
energy
metallization layer
annular
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PCT/CN2019/090794
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French (fr)
Chinese (zh)
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张彪
丁海
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京信通信技术(广州)有限公司
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Publication of WO2020087934A1 publication Critical patent/WO2020087934A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00Resonators of the waveguide type
    • H01P7/10Dielectric resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00Waveguides; Transmission lines of the waveguide type
    • H01P3/16Dielectric waveguides, i.e. without a longitudinal conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports

Definitions

  • the invention relates to the technical field of communication equipment, in particular to a dielectric resonator block, a dielectric waveguide filter and its coupling structure.
  • a dielectric resonator block, a dielectric waveguide filter and its coupling structure which can increase the strength of the energy coupling between the dielectric resonator blocks, avoid higher harmonics from being close to the passband, and have good performance of the remote outer band ;
  • the energy coupling strength of the coupling structure using the dielectric resonator block is high, the higher harmonics are far away from the passband, and the far-end outer band performance is good; thus, the energy coupling of the dielectric waveguide filter using the coupling structure High strength and good performance at the far end.
  • a dielectric resonant block is provided.
  • the dielectric resonant block is provided with a first metallization layer.
  • the first metallization layer is provided with an annular through slot and a second provided in the annular through slot The metallization layer and the annular through-groove are used to form a coupling window.
  • the surfaces of the two dielectric resonator blocks provided with the first metallization layer are adhered to each other, so that the two coupling windows are oppositely arranged and connected, and the two opposite second metals
  • the chemical layers are attached to each other and cooperate to form a first energy transmission channel, and the two annular through slots communicate with each other and cooperate to form a second energy transmission channel, so that not only can the two dielectric resonators pass through the air medium of the second energy transmission channel Energy coupling, and the energy coupling can also be performed through the first energy transmission channel, thereby improving the energy coupling strength between the two dielectric resonance blocks; meanwhile, the two dielectric resonance blocks are mainly conducted through the first energy transmission channel
  • the energy coupling that is, the energy coupling between the second metallization layers that are attached to each other, depends on the high coupling strength of the metal medium to the energy, which can reduce the size of the coupling window, thereby avoiding the higher harmonics away from the pass band.
  • the width of the annular through groove is 0.1 mm to 5 mm. In this way, during debugging, the width of the annular through-slot can be adjusted to adjust the energy coupling strength, which is simple and fast, which reduces the difficulty of debugging and improves the efficiency of debugging.
  • the shape of the annular through slot is set as a circular ring or a polygon. In this way, the width of the ring-shaped through-slot is uniformly set, which is convenient for adjusting the width of the ring-shaped through-slot, and thus the energy coupling strength can be adjusted simply and conveniently.
  • the polygon is set as a rectangle.
  • the outline of the annular through-groove is box-shaped, and the width of the annular through-groove can be uniformly adjusted, which is also convenient for processing and reduces the processing difficulty.
  • the thickness of the first metallization layer is 0.01 mm to 2 mm
  • the thickness of the second metallization layer is 0.01 mm to 2 mm. In this way, adjusting the thickness of the first metallization layer and the second metallization layer to adjust the energy coupling strength is simple and convenient.
  • the coupling window is disposed near the central axis of the dielectric resonator block. In this way, the distance of higher harmonics from the passband can be increased, further improving the far-end outband performance.
  • the dielectric resonant block is further provided with a metalized through-hole that is offset from the coupling window. In this way, the narrow side of the waveguide is configured to transmit the coupling of energy.
  • a coupling structure of a dielectric waveguide filter which includes two above-mentioned dielectric resonance blocks disposed in close contact with each other, and two of the ring-shaped through-slots communicate with each other to form a first energy coupling channel.
  • the second metallization layer is bonded together to form a second energy coupling channel.
  • the sides of the two dielectric resonator blocks provided with the first metallization layer are attached to each other, so that the two coupling windows are arranged oppositely.
  • the two ring-shaped through grooves communicate with each other and cooperate
  • a first energy coupling channel is formed, and two opposing second metallization layers are attached to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonators pass through the air medium of the first energy coupling channel for energy Coupling, and the energy coupling can also be performed through the metal medium of the second energy coupling channel, which improves the strength of the energy coupling between the two dielectric resonance blocks, thereby increasing the strength of the energy coupling of the coupling structure; at the same time, the two dielectric resonances
  • the energy coupling between the blocks is mainly through the second energy coupling channel, that is, the energy coupling between the two second metallization layers that are attached to each other, relying on the high coupling
  • a dielectric waveguide filter including: the above coupling structure.
  • the two dielectric resonator blocks of the coupling structure are provided with the first metallization layer attached to each other, so that the two coupling windows are arranged oppositely.
  • the two annular through slots communicate with each other and Cooperate to form a first energy coupling channel
  • two opposing second metallization layers stick to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonators pass through the air medium of the first energy coupling channel for energy
  • the energy coupling through the metal medium of the second energy coupling channel improves the strength of the energy coupling between the two dielectric resonators, thereby increasing the strength of the energy coupling of the dielectric waveguide filter;
  • the two The energy coupling between the two dielectric resonators is mainly through the second energy coupling channel, that is, the energy coupling between the two second metallization layers that are attached to each other depends on the high strength of the energy coupling of the metal medium,
  • FIG. 1 is a schematic structural diagram of a dielectric resonator block according to an embodiment
  • FIG. 2 is a schematic structural diagram of a coupling structure of a dielectric waveguide filter according to an embodiment
  • FIG 3 is a schematic structural view of a coupling structure of a dielectric waveguide filter according to another embodiment.
  • Dielectric resonator, 110 first metallization layer, 120, ring-shaped through slot, 130, coupling window, 140, second metallization layer, 150, metallization via.
  • a dielectric resonant block 100 is disclosed.
  • the dielectric resonant block 100 is provided with a first metallization layer 110, and the first metallization layer 110 is provided with an annular through groove 120 and a second metallization layer 140 disposed in the ring-shaped through slot 120.
  • the ring-shaped through slot 120 is used to form the coupling window 130.
  • the surfaces of the two dielectric resonator blocks 100 provided with the first metallization layer 110 are attached to each other, so that the two coupling windows 130 are arranged oppositely.
  • the two annular through slots 120 are connected to each other and cooperate to form a first energy coupling channel
  • two opposing second metallization layers 140 are attached to each other and cooperate to form a second energy coupling channel, so that the two dielectric resonator blocks 100 can not only couple through the first energy
  • the air medium of the channel is used for energy coupling, and the metal medium of the second energy coupling channel can also be used for energy coupling, which improves the strength of the energy coupling between the two dielectric resonator blocks 100; meanwhile, the two dielectric resonator blocks 100
  • the energy is mainly coupled through the second energy coupling channel, that is, the energy coupling between the two second metallization layers 140 that are attached to each other, and the coupling strength of the energy by the metal medium is high, so that
  • the shape of the dielectric resonator block 100 may be various, for example, it may be rectangular, square, or circular, as long as it meets the usage requirements.
  • the external dimensions of the coupling window 130 and the area of the second metallization layer 140 can be adjusted during the debugging stage, and only need to meet the actual use requirements, thereby reducing the debugging difficulty and improving the debugging efficiency.
  • the width of the annular through groove 120 is 0.1 mm to 5 mm.
  • the width of the annular through-slot 120 may be 0.1 mm or 5 mm.
  • the shape of the above-mentioned annular through groove 120 may be circular or polygonal, as long as it can separate the first metallization layer 110 and the second metallization layer 140 and perform energy between the dielectric resonator blocks 100 Coupling is sufficient. In this way, the design flexibility of the coupling window 130 is improved, the processing difficulty is reduced, the production cost is saved, and mass production is facilitated.
  • the shape of the annular through slot 120 is set as a circular ring or a polygon.
  • the width of the ring-shaped through-slot 120 can be uniformly distributed, which is convenient for adjusting the width of the ring-shaped through-slot 120, thereby facilitating adjustment of the energy coupling strength between the dielectric resonator blocks 100 during the adjustment stage.
  • the contour of the coupling window 130 is set to a first circle
  • the outer contour of the second metallization layer 140 is correspondingly set to a second circle
  • the second circle is included within the first circle
  • the second circle and the first circle are preferably arranged concentrically.
  • the annular through-slot 120 formed by the gap between the side wall of the second metallization layer 140 and the inner wall of the coupling window 130 is a uniform circular ring, so that the width of the annular through-slot 120 can be adjusted more accurately.
  • the energy coupling strength between the dielectric resonance blocks 100 can be accurately adjusted.
  • the coupling window 130 is set to a first polygon
  • the outer contour of the second metallization layer 140 is set to a second polygon matching the first polygon
  • the second polygon is included in the first polygon
  • the second polygon and the first polygon are preferably arranged at the same center of gravity.
  • the shape of the annular through groove 120 formed by the gap between the side wall of the second metallization layer 140 and the inner wall of the coupling window 130 corresponds to the shape of the polygon
  • the width of the annular through groove 120 is preferably uniform, so as to be more accurate Adjust the width of the ring-shaped through slot 120, and then can accurately adjust the energy coupling strength between the dielectric resonance blocks 100 during the debugging stage.
  • the polygon is set as a rectangle.
  • the outline of the annular through-slot 120 is a box shape, so that the width of the annular through-slot 120 can be uniformly set; at the same time, the rectangular shape is also convenient for processing and can be mass-produced.
  • the thickness of the first metallization layer 110 and the thickness of the second metallization layer 140 are the same or approximately the same. In this way, when the two dielectric resonator blocks 100 are assembled and assembled, the two opposing first metallization layers 110 can be closely adhered to each other, and the opposing two second metallization layers 140 can be closely adhered to each other Fit, without interference, to ensure the reliability of energy coupling.
  • the thickness of the first metallization layer 110 is approximately the same as the thickness of the second metallization layer 140. Considering processing and assembly errors, the thickness of the second metallization layer 140 and the thickness of the first metallization layer 110 are allowed to have A certain error should be considered to be the same thickness as long as the error is allowed.
  • the thickness of the first metallization layer 110 is 0.01 mm to 2 mm
  • the thickness of the second metallization layer 140 is also 0.01 mm to 2 mm. In this way, by adjusting the thickness of the first metallization layer 110 or the thickness of the second metallization layer 140, the size of the energy coupling strength between the two dielectric resonator blocks 100 can be flexibly adjusted to meet the usage requirements.
  • the thickness of the first metallization layer 110 may be 0.01 mm or 2 mm; the thickness of the second metallization layer 140 may be 0.01 mm or 2 mm.
  • the coupling window 130 is disposed near the central axis of the dielectric resonator block 100.
  • the higher harmonics can be further away from the passband, further enhancing the far-end outband performance.
  • the coupling window 130 is disposed close to the center position of the dielectric resonance block 100, so that the distance of the higher-order harmonics is the farthest from the pass band, and the far-end outer band has the best performance.
  • the dielectric resonance block 100 is further provided with a metalized through hole 150 that is offset from the coupling window 130.
  • a metalized through hole 150 that is offset from the coupling window 130.
  • a coupling structure of a dielectric waveguide filter is also disclosed, which includes two dielectric resonator blocks 100 of any of the above embodiments that are relatively attached to each other, and two The ring-shaped through slots 120 are connected to form a first energy coupling channel, and the two second metallization layers 140 are bonded together to form a second energy coupling channel.
  • the coupling structure of the dielectric waveguide filter of the above embodiment when used, one side of the two dielectric resonator blocks 100 provided with the first metallization layer 110 is attached to each other, so that the two coupling windows 130 are oppositely arranged.
  • the through slots 120 communicate with each other and cooperate to form a first energy coupling channel, and the two opposing second metallization layers 140 are bonded to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonator blocks 100 pass through the first
  • the air medium of the energy coupling channel couples the energy, and the energy coupling through the metal medium of the second energy coupling channel improves the strength of the energy coupling between the two dielectric resonators 100, thereby increasing the energy of the coupling structure
  • the strength of the coupling; at the same time, the energy coupling between the two dielectric resonators 100 is mainly through the second energy coupling channel, that is, the energy coupling between the two second metallization layers 140 that are attached to each other depends on
  • a dielectric waveguide filter is also disclosed, including the coupling structure of the above embodiment.
  • the two dielectric resonator blocks 100 of the coupling structure provided with the first metallization layer 110 are attached to each other, so that the two coupling windows 130 are oppositely arranged.
  • the ring-shaped through-slots 120 communicate with each other and cooperate to form a first energy coupling channel, and the two opposing second metallization layers 140 are attached to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonator blocks 100 pass through
  • the air medium of an energy coupling channel performs energy coupling, and energy coupling can also be performed through the metal medium of the second energy coupling channel, which improves the strength of energy coupling between the two dielectric resonator blocks 100, thereby improving the dielectric waveguide filtering.
  • the metal medium has high energy coupling strength, which can reduce the size of the coupling window 130, thereby avoiding the higher harmonics away from the pass band Problem, the distal end of the outer band of the dielectric waveguide filter performance is good.
  • dielectric waveguide filters are particularly suitable for ceramic dielectric waveguide filters, and their characteristics of miniaturization, light weight, and high performance meet the development needs of devices for communications.

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Abstract

Disclosed by the present invention are a dielectric resonance block, a dielectric waveguide filter, and a coupling structure thereof; a first metallized layer is provided on a dielectric resonance block, an annular through-slot and a second metallized layer disposed within the annular through-slot are provided on the first metallized layer, and the annular through-slot is used to form a coupling window. The present invention may improve the strength of energy coupling between dielectric resonance blocks, prevent higher harmonics from being relatively close to a passband, and achieve good distal out-of-band performance. As a result, the strength of energy coupling of a coupling structure using the dielectric resonance blocks is high, higher harmonics are relatively far away from a passband, and distal out-of-band performance is good. As a result, the strength of energy coupling of a dielectric waveguide filter using the coupling structure is high and distal out-of-band performance is good.

Description

介质谐振块、介质波导滤波器及其耦合结构Dielectric resonance block, dielectric waveguide filter and its coupling structure 技术领域Technical field
本发明涉及通信设备技术领域,具体涉及一种介质谐振块、介质波导滤波器及其耦合结构。The invention relates to the technical field of communication equipment, in particular to a dielectric resonator block, a dielectric waveguide filter and its coupling structure.
背景技术Background technique
5G时代的到来,小型化、轻量化、低成本的微波射频器件成为了未来发展的趋势。随着无线通信的不断深入发展,绿色能源的提倡以及降低成本的诉求日渐强烈,小型化、高性能、低功耗的便携式终端系统需求日渐增多,相应也需要滤波器朝着小型化和轻量化不断改进。介质波导滤波器以其小型化、轻量化、高性能化的特点完美契合5G通信对器件的发展需求。With the advent of the 5G era, miniaturized, lightweight, and low-cost microwave radio frequency devices have become the future development trend. With the continuous development of wireless communication, the promotion of green energy and the demand for cost reduction are increasingly strong. The demand for miniaturized, high-performance, and low-power portable terminal systems is increasing. Correspondingly, filters are required to be smaller and lighter. keep improving. The dielectric waveguide filter with its characteristics of miniaturization, light weight and high performance perfectly fits the development needs of 5G communications for devices.
传统的介质波导滤波器的介质谐振块之间主要依靠耦合窗口内的空气介质进行能量耦合,由于能量耦合的强度有限,为了提高能量耦合的强度,需增大耦合窗口的大小,从而导致高次谐波离通带较近,进而影响了介质波导滤波器的远端外带性能。Traditional dielectric waveguide filters mainly rely on the air medium in the coupling window for energy coupling between the dielectric resonator blocks. Due to the limited energy coupling strength, in order to increase the strength of the energy coupling, the size of the coupling window needs to be increased, resulting in high-order Harmonics are closer to the passband, which in turn affects the far-end performance of the dielectric waveguide filter.
发明内容Summary of the invention
基于此,有必要提供一种介质谐振块、介质波导滤波器及其耦合结构,能够提高介质谐振块之间能量耦合的强度,避免高次谐波离通带较近,远端外带性能好;如此,采用该介质谐振块的耦合结构的能量耦合的强度高,高次谐波离通带较远,远端外带性能好;如此,采用该耦合结构的介质波导滤波器的能量耦合的强度高,远端外带性能好。Based on this, it is necessary to provide a dielectric resonator block, a dielectric waveguide filter and its coupling structure, which can increase the strength of the energy coupling between the dielectric resonator blocks, avoid higher harmonics from being close to the passband, and have good performance of the remote outer band ; In this way, the energy coupling strength of the coupling structure using the dielectric resonator block is high, the higher harmonics are far away from the passband, and the far-end outer band performance is good; thus, the energy coupling of the dielectric waveguide filter using the coupling structure High strength and good performance at the far end.
其技术方案如下:The technical solution is as follows:
一方面,提供了一种介质谐振块,所述介质谐振块上设有第一金属化层,所述第一金属化层上设有环形通槽及设置于所述环形通槽内的第二金属化层,所述环形通槽用于形成耦合窗口。In one aspect, a dielectric resonant block is provided. The dielectric resonant block is provided with a first metallization layer. The first metallization layer is provided with an annular through slot and a second provided in the annular through slot The metallization layer and the annular through-groove are used to form a coupling window.
上述陶瓷介质波导滤波器的耦合窗口结构,使用时,将两个介质谐振块设有第一金属化层的一面相互贴合,使得两个耦合窗口相对设置并连通,相对的两个第二金属化层相互贴合并配合形成第一能量传输通道,两个环形通槽相互连通并配合形成第二能量传输通道,从而使得两个介质谐振块之间不仅能够通过第二能量传输通道的空气介质进行能量的耦合,而且还能通过第一能量传输通道进行能量的耦合,从而提高了两个介质谐振块之间能量的耦合强度;同时,两个介质谐振块之间主要通过第一能量传输通道进行能量的耦合,即相互贴合的第二金属化层之间进行能量的耦合,依靠金属媒介对能量的耦合强度高,从而能够缩小耦合窗口的大小,进而避免了高次谐波离通带较近的问题,远端外带性能好。In the coupling window structure of the above ceramic dielectric waveguide filter, when used, the surfaces of the two dielectric resonator blocks provided with the first metallization layer are adhered to each other, so that the two coupling windows are oppositely arranged and connected, and the two opposite second metals The chemical layers are attached to each other and cooperate to form a first energy transmission channel, and the two annular through slots communicate with each other and cooperate to form a second energy transmission channel, so that not only can the two dielectric resonators pass through the air medium of the second energy transmission channel Energy coupling, and the energy coupling can also be performed through the first energy transmission channel, thereby improving the energy coupling strength between the two dielectric resonance blocks; meanwhile, the two dielectric resonance blocks are mainly conducted through the first energy transmission channel The energy coupling, that is, the energy coupling between the second metallization layers that are attached to each other, depends on the high coupling strength of the metal medium to the energy, which can reduce the size of the coupling window, thereby avoiding the higher harmonics away from the pass band. The problem is that the far-end outband performance is good.
下面进一步对技术方案进行说明:The technical solution is further explained below:
在其中一个实施例中,所述环形通槽的宽度为0.1mm~5mm。如此,调试时,能够通过调节环形通槽的宽度大小,从而调节能量的耦合强度,简单、快捷,降低了调试的难度,提高了调试的效率。In one of the embodiments, the width of the annular through groove is 0.1 mm to 5 mm. In this way, during debugging, the width of the annular through-slot can be adjusted to adjust the energy coupling strength, which is simple and fast, which reduces the difficulty of debugging and improves the efficiency of debugging.
在其中一个实施例中,所述环形通槽的形状设置为圆环形或多边形。如此,环形通槽的宽度均匀设置,方便对环形通槽的宽度进行调节,进而能够简单方便的对能量的耦合强度进行调节。In one of the embodiments, the shape of the annular through slot is set as a circular ring or a polygon. In this way, the width of the ring-shaped through-slot is uniformly set, which is convenient for adjusting the width of the ring-shaped through-slot, and thus the energy coupling strength can be adjusted simply and conveniently.
在其中一个实施例中,所述多边形设置为矩形。如此,环形通槽的轮廓为方框形,环形通槽的宽度能够进行均匀的调节,也便于加工,降低了加工难度。In one of the embodiments, the polygon is set as a rectangle. In this way, the outline of the annular through-groove is box-shaped, and the width of the annular through-groove can be uniformly adjusted, which is also convenient for processing and reduces the processing difficulty.
在其中一个实施例中,所述第一金属化层的厚度为0.01mm~2mm,所述第 二金属化层的厚度为0.01mm~2mm。如此,通过调整第一金属化层及第二金属化层的厚度,从而调整能量的耦合强度,简单、方便。In one embodiment, the thickness of the first metallization layer is 0.01 mm to 2 mm, and the thickness of the second metallization layer is 0.01 mm to 2 mm. In this way, adjusting the thickness of the first metallization layer and the second metallization layer to adjust the energy coupling strength is simple and convenient.
在其中一个实施例中,所述耦合窗口靠近所述介质谐振块的中轴线设置。如此,能够增加高次谐波离通带的距离,进一步提高了远端外带性能。In one of the embodiments, the coupling window is disposed near the central axis of the dielectric resonator block. In this way, the distance of higher harmonics from the passband can be increased, further improving the far-end outband performance.
在其中一个实施例中,所述介质谐振块上还设有与所述耦合窗口错位设置的金属化通孔。如此,构成波导的窄边,对能量的耦合进行传输。In one of the embodiments, the dielectric resonant block is further provided with a metalized through-hole that is offset from the coupling window. In this way, the narrow side of the waveguide is configured to transmit the coupling of energy.
另一方面,提供了一种介质波导滤波器的耦合结构,包括两块相对贴合设置的上述介质谐振块,且两个所述环形通槽相连通形成第一能量耦合通道,两个所述第二金属化层相贴合形成第二能量耦合通道。On the other hand, there is provided a coupling structure of a dielectric waveguide filter, which includes two above-mentioned dielectric resonance blocks disposed in close contact with each other, and two of the ring-shaped through-slots communicate with each other to form a first energy coupling channel. The second metallization layer is bonded together to form a second energy coupling channel.
上述介质波导滤波器的耦合结构,使用时,两个介质谐振块设有第一金属化层的一面相互贴合,使得两个耦合窗口相对设置,此时,两个环形通槽相互连通并配合形成第一能量耦合通道,相对的两个第二金属化层相互贴合并配合形成第二能量耦合通道,从而使得两个介质谐振块之间不仅能够通过第一能量耦合通道的空气介质进行能量的耦合,而且还能通过第二能量耦合通道的金属媒介进行能量的耦合,提高了两个介质谐振块之间能量耦合的强度,从而提高了耦合结构的能量耦合的强度;同时,两个介质谐振块之间主要通过第二能量耦合通道进行能量的耦合,即相互贴合的两个第二金属化层之间进行能量的耦合,依靠金属媒介对能量的耦合强度高,从而能够缩小耦合窗口的大小,进而避免了高次谐波离通带较近的问题,耦合结构的远端外带性能好。In the coupling structure of the above dielectric waveguide filter, when used, the sides of the two dielectric resonator blocks provided with the first metallization layer are attached to each other, so that the two coupling windows are arranged oppositely. At this time, the two ring-shaped through grooves communicate with each other and cooperate A first energy coupling channel is formed, and two opposing second metallization layers are attached to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonators pass through the air medium of the first energy coupling channel for energy Coupling, and the energy coupling can also be performed through the metal medium of the second energy coupling channel, which improves the strength of the energy coupling between the two dielectric resonance blocks, thereby increasing the strength of the energy coupling of the coupling structure; at the same time, the two dielectric resonances The energy coupling between the blocks is mainly through the second energy coupling channel, that is, the energy coupling between the two second metallization layers that are attached to each other, relying on the high coupling strength of the metal medium to the energy, which can reduce the coupling window. Size, which avoids the problem of higher harmonics being closer to the passband, and the far-end outer band performance of the coupling structure is good.
再一方面,提供了一种介质波导滤波器,包括:上述的耦合结构。In still another aspect, a dielectric waveguide filter is provided, including: the above coupling structure.
上述介质波导滤波器,使用时,将耦合结构的两个介质谐振块设有第一金属化层的一面相互贴合,使得两个耦合窗口相对设置,此时,两个环形通槽相互连通并配合形成第一能量耦合通道,相对的两个第二金属化层相互贴合并配 合形成第二能量耦合通道,从而使得两个介质谐振块之间不仅能够通过第一能量耦合通道的空气介质进行能量的耦合,而且还能通过第二能量耦合通道的金属媒介进行能量的耦合,提高了两个介质谐振块之间能量耦合的强度,从而提高了介质波导滤波器的能量耦合的强度;同时,两个介质谐振块之间主要通过第二能量耦合通道进行能量的耦合,即相互贴合的两个第二金属化层之间进行能量的耦合,依靠金属媒介对能量的耦合强度高,从而能够缩小耦合窗口的大小,进而避免了高次谐波离通带较近的问题,介质波导滤波器的远端外带性能好。When using the above-mentioned dielectric waveguide filter, the two dielectric resonator blocks of the coupling structure are provided with the first metallization layer attached to each other, so that the two coupling windows are arranged oppositely. At this time, the two annular through slots communicate with each other and Cooperate to form a first energy coupling channel, and two opposing second metallization layers stick to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonators pass through the air medium of the first energy coupling channel for energy And the energy coupling through the metal medium of the second energy coupling channel improves the strength of the energy coupling between the two dielectric resonators, thereby increasing the strength of the energy coupling of the dielectric waveguide filter; at the same time, the two The energy coupling between the two dielectric resonators is mainly through the second energy coupling channel, that is, the energy coupling between the two second metallization layers that are attached to each other depends on the high strength of the energy coupling of the metal medium, which can be reduced The size of the coupling window, thereby avoiding the problem of higher harmonics closer to the passband, the distance of the dielectric waveguide filter Out-of-band performance is good.
附图说明BRIEF DESCRIPTION
图1为一个实施例的介质谐振块的结构示意图;FIG. 1 is a schematic structural diagram of a dielectric resonator block according to an embodiment;
图2为一个实施例的介质波导滤波器的耦合结构的结构示意图;2 is a schematic structural diagram of a coupling structure of a dielectric waveguide filter according to an embodiment;
图3为另一个实施例的介质波导滤波器的耦合结构的结构示意图。3 is a schematic structural view of a coupling structure of a dielectric waveguide filter according to another embodiment.
附图标记说明:Description of reference signs:
100、介质谐振块,110、第一金属化层,120、环形通槽,130、耦合窗口,140、第二金属化层,150、金属化通孔。100. Dielectric resonator, 110, first metallization layer, 120, ring-shaped through slot, 130, coupling window, 140, second metallization layer, 150, metallization via.
具体实施方式detailed description
为使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及具体实施方式,对本发明进行进一步的详细说明。应当理解的是,此处所描述的具体实施方式仅用以解释本发明,并不限定本发明的保护范围。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, and do not limit the protection scope of the present invention.
需要说明的是,当元件被称为“设置于”、“固设于”另一个元件,它可以直接在另一个元件上或者也可以存在居中的元件。当元件被称为“固设于”另一个元件,或与另一个元件“固定连接”,它们之间可以是可拆卸固定方式也可 以是不可拆卸的固定方式。当一个元件被认为是“连接”、“转动连接”另一个元件,它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”、“上”、“下”以及类似的表述只是为了说明的目的,并不表示是唯一的实施方式。It should be noted that, when an element is referred to as "set on" or "fixed on" another element, it may be directly on another element or there may be a centered element. When an element is said to be “fixed” to another element or “fixedly connected” to another element, they can be detachable or non-removable. When an element is considered to be "connected" or "rotationally connected" to another element, it may be directly connected to another element or there may be a centered element at the same time. As used herein, the terms "vertical", "horizontal", "left", "right", "upper", "lower" and similar expressions are for illustrative purposes only and do not represent the only implementation.
除非另有定义,本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施方式的目的,不是旨在于约束本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field of the present invention. The terminology used in the description of the present invention herein is for the purpose of describing specific embodiments, and is not intended to limit the present invention. The term "and / or" as used herein includes any and all combinations of one or more related listed items.
本发明中所述“第一”、“第二”、“第三”等类似用语不代表具体的数量及顺序,仅仅是用于名称的区分。The terms "first", "second", "third" and the like in the present invention do not represent a specific number and order, but are only used to distinguish names.
如图1及图2所示,在一个实施例中,公开了一种介质谐振块100,介质谐振块100上设有第一金属化层110,第一金属化层110上设有环形通槽120及设置于环形通槽120内的第二金属化层140,环形通槽120用于形成耦合窗口130。As shown in FIGS. 1 and 2, in one embodiment, a dielectric resonant block 100 is disclosed. The dielectric resonant block 100 is provided with a first metallization layer 110, and the first metallization layer 110 is provided with an annular through groove 120 and a second metallization layer 140 disposed in the ring-shaped through slot 120. The ring-shaped through slot 120 is used to form the coupling window 130.
上述实施例的介质谐振块100,使用时,将两个介质谐振块100设有第一金属化层110的一面相互贴合,使得两个耦合窗口130相对设置,此时,两个环形通槽120相互连通并配合形成第一能量耦合通道,相对的两个第二金属化层140相互贴合并配合形成第二能量耦合通道,从而使得两个介质谐振块100之间不仅能够通过第一能量耦合通道的空气介质进行能量的耦合,而且还能通过第二能量耦合通道的金属媒介进行能量的耦合,提高了两个介质谐振块100之间能量耦合的强度;同时,两个介质谐振块100之间主要通过第二能量耦合通道进行能量的耦合,即相互贴合的两个第二金属化层140之间进行能量的耦合,依靠金属媒介对能量的耦合强度高,从而能够缩小耦合窗口130的大小,进而避免了高次谐波离通带较近的问题,远端外带性能好。When using the dielectric resonator block 100 of the above embodiment, the surfaces of the two dielectric resonator blocks 100 provided with the first metallization layer 110 are attached to each other, so that the two coupling windows 130 are arranged oppositely. At this time, the two annular through slots 120 are connected to each other and cooperate to form a first energy coupling channel, and two opposing second metallization layers 140 are attached to each other and cooperate to form a second energy coupling channel, so that the two dielectric resonator blocks 100 can not only couple through the first energy The air medium of the channel is used for energy coupling, and the metal medium of the second energy coupling channel can also be used for energy coupling, which improves the strength of the energy coupling between the two dielectric resonator blocks 100; meanwhile, the two dielectric resonator blocks 100 The energy is mainly coupled through the second energy coupling channel, that is, the energy coupling between the two second metallization layers 140 that are attached to each other, and the coupling strength of the energy by the metal medium is high, so that the coupling window 130 can be narrowed. Size, which avoids the problem of higher harmonics being closer to the passband, and the far-end outband performance is good.
需要进行说明的是,上述介质谐振块100的形状可以是多种多样的,例如可以是矩形、正方形或圆形,只需满足使用需求即可。上述耦合窗口130的外形尺寸以及第二金属化层140的面积,在调试阶段均可以进行调整,只需满足实际使用需求即可,从而降低了调试难度也提高了调试效率。It should be noted that the shape of the dielectric resonator block 100 may be various, for example, it may be rectangular, square, or circular, as long as it meets the usage requirements. The external dimensions of the coupling window 130 and the area of the second metallization layer 140 can be adjusted during the debugging stage, and only need to meet the actual use requirements, thereby reducing the debugging difficulty and improving the debugging efficiency.
如图1所示,在一个实施例中,环形通槽120的宽度为0.1mm~5mm。如此,不仅可以保证两个介质谐振块100之间装配的可靠性;而且,在调试阶段,通过对环形通槽120的宽度进行调整,能够改变能量的耦合强度,从而能够灵活的对两个介质谐振块100之间的能量耦合的强度大小进行调节,进而能够调节滤波器的带宽,以满足使用需求,降低了调试难度也提高了调试效率,也使得调节范围广,通用性强。上述环形通槽120的宽度可以为0.1mm或5mm。As shown in FIG. 1, in one embodiment, the width of the annular through groove 120 is 0.1 mm to 5 mm. In this way, not only can the reliability of the assembly between the two dielectric resonator blocks 100 be ensured; moreover, during the commissioning phase, by adjusting the width of the annular through-slot 120, the coupling strength of the energy can be changed, so that the two dielectrics can be flexibly The intensity of the energy coupling between the resonant blocks 100 can be adjusted, and the bandwidth of the filter can be adjusted to meet the use requirements, which reduces the difficulty of debugging and improves the debugging efficiency, and also makes the adjustment range wide and versatile. The width of the above-mentioned annular through groove 120 may be 0.1 mm or 5 mm.
上述环形通槽120的形状,可以为圆形,也可以为多边形,只需满足能够将第一金属化层110及第二金属化层140进行隔开并对介质谐振块100之间的能量进行耦合传递即可。如此,提高了耦合窗口130设计的灵活性,降低了加工难度,节省了生产成本,便于批量化生产。The shape of the above-mentioned annular through groove 120 may be circular or polygonal, as long as it can separate the first metallization layer 110 and the second metallization layer 140 and perform energy between the dielectric resonator blocks 100 Coupling is sufficient. In this way, the design flexibility of the coupling window 130 is improved, the processing difficulty is reduced, the production cost is saved, and mass production is facilitated.
可选地,环形通槽120的形状设置为圆环形或多边形。如此,环形通槽120的宽度能够均匀分布,方便对环形通槽120的宽度进行调节,从而方便在调节阶段调节介质谐振块100之间的能量的耦合强度。Optionally, the shape of the annular through slot 120 is set as a circular ring or a polygon. In this way, the width of the ring-shaped through-slot 120 can be uniformly distributed, which is convenient for adjusting the width of the ring-shaped through-slot 120, thereby facilitating adjustment of the energy coupling strength between the dielectric resonator blocks 100 during the adjustment stage.
如图1及图2所示,在一个实施例中,耦合窗口130的轮廓设置为第一圆形,第二金属化层140的外轮廓相应设置为第二圆形,第二圆形被包括在第一圆形内,且第二圆形与第一圆形优选呈同圆心设置。如此,第二金属化层140的侧壁与耦合窗口130的内壁之间间隙形成的环形通槽120为均匀的圆环形,从而能够更加准确的对环形通槽120的宽度进行调节,进而在调试阶段能够准确的对介质谐振块100之间能量的耦合强度进行调节。As shown in FIGS. 1 and 2, in one embodiment, the contour of the coupling window 130 is set to a first circle, and the outer contour of the second metallization layer 140 is correspondingly set to a second circle, and the second circle is included Within the first circle, the second circle and the first circle are preferably arranged concentrically. In this way, the annular through-slot 120 formed by the gap between the side wall of the second metallization layer 140 and the inner wall of the coupling window 130 is a uniform circular ring, so that the width of the annular through-slot 120 can be adjusted more accurately. During the debugging stage, the energy coupling strength between the dielectric resonance blocks 100 can be accurately adjusted.
如图3所示,在另一个实施例中,耦合窗口130设置为第一多边形,第二金属化层140的外轮廓设置为与第一多边形相匹配的第二多边形,第二多边形被包括在第一多边形内,且第二多边形与第一多边形优选呈同重心设置。如此,第二金属化层140的侧壁与耦合窗口130的内壁之间间隙形成的环形通槽120的形状与多边形的形状相对应,环形通槽120的宽度优选为均匀状态,从而能够更加准确的对环形通槽120的宽度进行调节,进而在调试阶段能够准确的对介质谐振块100之间能量的耦合强度进行调节。As shown in FIG. 3, in another embodiment, the coupling window 130 is set to a first polygon, and the outer contour of the second metallization layer 140 is set to a second polygon matching the first polygon, The second polygon is included in the first polygon, and the second polygon and the first polygon are preferably arranged at the same center of gravity. In this way, the shape of the annular through groove 120 formed by the gap between the side wall of the second metallization layer 140 and the inner wall of the coupling window 130 corresponds to the shape of the polygon, and the width of the annular through groove 120 is preferably uniform, so as to be more accurate Adjust the width of the ring-shaped through slot 120, and then can accurately adjust the energy coupling strength between the dielectric resonance blocks 100 during the debugging stage.
如图3所示,具体到本实施例中,多边形设置为矩形。如此,环形通槽120的轮廓为方框形,使得环形通槽120的宽度能够均匀的设置;同时,矩形也便于加工,能够大批量生产。As shown in FIG. 3, specifically in this embodiment, the polygon is set as a rectangle. In this way, the outline of the annular through-slot 120 is a box shape, so that the width of the annular through-slot 120 can be uniformly set; at the same time, the rectangular shape is also convenient for processing and can be mass-produced.
在上述任一实施例的基础上,第一金属化层110的厚度与第二金属化层140的厚度相同或近似相同。如此,将两块介质谐振块100进行装配拼合时,使得相对的两层第一金属化层110之间能够进行紧密的贴合,相对的两层第二金属化层140之间能够进行紧密的贴合,而不会发生干涉,保证能量耦合的可靠性。第一金属化层110的厚度与第二金属化层140的厚度近似相同,是考虑到加工误差和装配误差的问题,第二金属化层140的厚度与第一金属化层110的厚度允许有一定的误差,只要在误差允许范围内都应当认为是厚度相同。Based on any of the foregoing embodiments, the thickness of the first metallization layer 110 and the thickness of the second metallization layer 140 are the same or approximately the same. In this way, when the two dielectric resonator blocks 100 are assembled and assembled, the two opposing first metallization layers 110 can be closely adhered to each other, and the opposing two second metallization layers 140 can be closely adhered to each other Fit, without interference, to ensure the reliability of energy coupling. The thickness of the first metallization layer 110 is approximately the same as the thickness of the second metallization layer 140. Considering processing and assembly errors, the thickness of the second metallization layer 140 and the thickness of the first metallization layer 110 are allowed to have A certain error should be considered to be the same thickness as long as the error is allowed.
在一个实施例中,第一金属化层110的厚度为0.01mm~2mm,第二金属化层140的厚度也为0.01mm~2mm。如此,通过调整第一金属化层110的厚度或第二金属化层140的厚度,从而能够灵活的对两个介质谐振块100之间的能量的耦合强度的大小进行调节,以满足使用需求。第一金属化层110的厚度可以为0.01mm,也可以为2mm;第二金属化层140的厚度可以为0.01mm,也可以为2mm。In one embodiment, the thickness of the first metallization layer 110 is 0.01 mm to 2 mm, and the thickness of the second metallization layer 140 is also 0.01 mm to 2 mm. In this way, by adjusting the thickness of the first metallization layer 110 or the thickness of the second metallization layer 140, the size of the energy coupling strength between the two dielectric resonator blocks 100 can be flexibly adjusted to meet the usage requirements. The thickness of the first metallization layer 110 may be 0.01 mm or 2 mm; the thickness of the second metallization layer 140 may be 0.01 mm or 2 mm.
如图1至图3所示,在上述任一实施例的基础上,耦合窗口130靠近介质谐振块100的中轴线设置。如此,能够使得高次谐波离通带的距离更远,进一步加强远端外带性能。优选地,将耦合窗口130靠近介质谐振块100的中心位置设置,如此,高次谐波离通带的距离最远,远端外带性能最佳。As shown in FIGS. 1 to 3, on the basis of any of the foregoing embodiments, the coupling window 130 is disposed near the central axis of the dielectric resonator block 100. In this way, the higher harmonics can be further away from the passband, further enhancing the far-end outband performance. Preferably, the coupling window 130 is disposed close to the center position of the dielectric resonance block 100, so that the distance of the higher-order harmonics is the farthest from the pass band, and the far-end outer band has the best performance.
如图1至图3所示,在上述任一实施例的基础上,介质谐振块100上还设有与耦合窗口130错位设置的金属化通孔150。如此,通过金属化通孔150构成波导的窄边,与第一金属化层110和第二金属化层140构成波导的宽边一起,构成电磁波的传输结构。As shown in FIGS. 1 to 3, on the basis of any of the foregoing embodiments, the dielectric resonance block 100 is further provided with a metalized through hole 150 that is offset from the coupling window 130. In this way, the narrow side of the waveguide is formed by the metallized via 150, and together with the wide side of the waveguide formed by the first metallization layer 110 and the second metallization layer 140, an electromagnetic wave transmission structure is formed.
如图2及图3所示,在一个实施例中,还公开了一种介质波导滤波器的耦合结构,包括两块相对贴合设置的上述任一实施例的介质谐振块100,且两个环形通槽120相连通形成第一能量耦合通道,两个第二金属化层140相贴合形成第二能量耦合通道。As shown in FIG. 2 and FIG. 3, in one embodiment, a coupling structure of a dielectric waveguide filter is also disclosed, which includes two dielectric resonator blocks 100 of any of the above embodiments that are relatively attached to each other, and two The ring-shaped through slots 120 are connected to form a first energy coupling channel, and the two second metallization layers 140 are bonded together to form a second energy coupling channel.
上述实施例的介质波导滤波器的耦合结构,使用时,两个介质谐振块100设有第一金属化层110的一面相互贴合,使得两个耦合窗口130相对设置,此时,两个环形通槽120相互连通并配合形成第一能量耦合通道,相对的两个第二金属化层140相互贴合并配合形成第二能量耦合通道,从而使得两个介质谐振块100之间不仅能够通过第一能量耦合通道的空气介质进行能量的耦合,而且还能通过第二能量耦合通道的金属媒介进行能量的耦合,提高了两个介质谐振块100之间能量耦合的强度,从而提高了耦合结构的能量耦合的强度;同时,两个介质谐振块100之间主要通过第二能量耦合通道进行能量的耦合,即相互贴合的两个第二金属化层140之间进行能量的耦合,依靠金属媒介对能量的耦合强度高,从而能够缩小耦合窗口130的大小,进而避免了高次谐波离通带较近的问题,耦合结构的远端外带性能好。In the coupling structure of the dielectric waveguide filter of the above embodiment, when used, one side of the two dielectric resonator blocks 100 provided with the first metallization layer 110 is attached to each other, so that the two coupling windows 130 are oppositely arranged. The through slots 120 communicate with each other and cooperate to form a first energy coupling channel, and the two opposing second metallization layers 140 are bonded to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonator blocks 100 pass through the first The air medium of the energy coupling channel couples the energy, and the energy coupling through the metal medium of the second energy coupling channel improves the strength of the energy coupling between the two dielectric resonators 100, thereby increasing the energy of the coupling structure The strength of the coupling; at the same time, the energy coupling between the two dielectric resonators 100 is mainly through the second energy coupling channel, that is, the energy coupling between the two second metallization layers 140 that are attached to each other depends on the metal medium pair The energy coupling strength is high, which can reduce the size of the coupling window 130, thereby avoiding the problem of higher harmonics being closer to the passband The distal end of the outer band coupling structure and good performance.
在一个实施例中,还公开了一种介质波导滤波器,包括上述实施例的耦合结构。In one embodiment, a dielectric waveguide filter is also disclosed, including the coupling structure of the above embodiment.
上述实施例的介质波导滤波器,使用时,将耦合结构的两个介质谐振块100设有第一金属化层110的一面相互贴合,使得两个耦合窗口130相对设置,此时,两个环形通槽120相互连通并配合形成第一能量耦合通道,相对的两个第二金属化层140相互贴合并配合形成第二能量耦合通道,从而使得两个介质谐振块100之间不仅能够通过第一能量耦合通道的空气介质进行能量的耦合,而且还能通过第二能量耦合通道的金属媒介进行能量的耦合,提高了两个介质谐振块100之间能量耦合的强度,从而提高了介质波导滤波器的能量耦合的强度;同时,两个介质谐振块100之间主要通过第二能量耦合通道进行能量的耦合,即相互贴合的两个第二金属化层140之间进行能量的耦合,依靠金属媒介对能量的耦合强度高,从而能够缩小耦合窗口130的大小,进而避免了高次谐波离通带较近的问题,介质波导滤波器的远端外带性能好。When using the dielectric waveguide filter of the above embodiment, the two dielectric resonator blocks 100 of the coupling structure provided with the first metallization layer 110 are attached to each other, so that the two coupling windows 130 are oppositely arranged. The ring-shaped through-slots 120 communicate with each other and cooperate to form a first energy coupling channel, and the two opposing second metallization layers 140 are attached to each other and cooperate to form a second energy coupling channel, so that not only can the two dielectric resonator blocks 100 pass through The air medium of an energy coupling channel performs energy coupling, and energy coupling can also be performed through the metal medium of the second energy coupling channel, which improves the strength of energy coupling between the two dielectric resonator blocks 100, thereby improving the dielectric waveguide filtering. The strength of the energy coupling of the device; at the same time, the energy coupling between the two dielectric resonators 100 is mainly through the second energy coupling channel, that is, the energy coupling between the two second metallization layers 140 that are attached to each other depends on The metal medium has high energy coupling strength, which can reduce the size of the coupling window 130, thereby avoiding the higher harmonics away from the pass band Problem, the distal end of the outer band of the dielectric waveguide filter performance is good.
上述介质波导滤波器尤其适用于陶瓷类介质波导滤波器,其小型化、轻量化、高性能化的特点契合通信对器件的发展需求。The above-mentioned dielectric waveguide filters are particularly suitable for ceramic dielectric waveguide filters, and their characteristics of miniaturization, light weight, and high performance meet the development needs of devices for communications.
以上实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above embodiments can be arbitrarily combined. To simplify the description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be It is considered to be within the scope of this description.
以上实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的约束。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。The above examples only express several embodiments of the present invention, and their descriptions are more specific and detailed, but they should not be construed as constraints on the patent scope of the invention. It should be noted that, for a person of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can also be made, which all fall within the protection scope of the present invention. Therefore, the protection scope of the invention patent shall be subject to the appended claims.

Claims (10)

  1. 一种介质谐振块,其特征在于,所述介质谐振块上设有第一金属化层,所述第一金属化层上设有环形通槽及设置于所述环形通槽内的第二金属化层,所述环形通槽用于形成耦合窗口。A dielectric resonant block, characterized in that the dielectric resonant block is provided with a first metallization layer, and the first metallization layer is provided with an annular through slot and a second metal provided in the annular through slot Layer, the annular through-groove is used to form a coupling window.
  2. 根据权利要求1所述的介质谐振块,其特征在于,所述环形通槽的宽度为0.1mm~5mm。The dielectric resonator block according to claim 1, wherein the width of the annular through groove is 0.1 mm to 5 mm.
  3. 根据权利要求1所述的介质谐振块,其特征在于,所述环形通槽的形状设置为圆环形或多边形。The dielectric resonator block according to claim 1, wherein the shape of the annular through groove is set as a circular ring or a polygon.
  4. 根据权利要求3所述的介质谐振块,其特征在于,所述多边形设置为矩形。The dielectric resonator block according to claim 3, wherein the polygon is set as a rectangle.
  5. 根据权利要求1所述的介质谐振块,其特征在于,所述第一金属化层的厚度与所述第二金属化层的厚度相同或近似相同。The dielectric resonator block according to claim 1, wherein the thickness of the first metallization layer and the thickness of the second metallization layer are the same or approximately the same.
  6. 根据权利要求1所述的介质谐振块,其特征在于,所述第一金属化层的厚度为0.01mm~2mm,所述第二金属化层的厚度为0.01mm~2mm。The dielectric resonator block according to claim 1, wherein the thickness of the first metallization layer is 0.01 mm to 2 mm, and the thickness of the second metallization layer is 0.01 mm to 2 mm.
  7. 根据权利要求1所述的介质谐振块,其特征在于,所述耦合窗口靠近所述介质谐振块的中轴线设置。The dielectric resonator block according to claim 1, wherein the coupling window is disposed near a central axis of the dielectric resonator block.
  8. 根据权利要求1所述的介质谐振块,其特征在于,所述介质谐振块上还设有与所述耦合窗口错位设置的金属化通孔。The dielectric resonant block according to claim 1, wherein the dielectric resonant block is further provided with a metalized through hole which is offset from the coupling window.
  9. 一种介质波导滤波器的耦合结构,其特征在于,包括两块相对贴合设置的如权利要求1至8任一项所述的介质谐振块,且两个所述环形通槽相连通形成第一能量耦合通道,两个所述第二金属化层相贴合形成第二能量耦合通道。A coupling structure of a dielectric waveguide filter, characterized in that it comprises two dielectric resonator blocks as claimed in any one of claims 1 to 8 which are arranged in close contact with each other, and the two ring-shaped through grooves are connected to form a first An energy coupling channel. Two second metallization layers are bonded together to form a second energy coupling channel.
  10. 一种介质波导滤波器,其特征在于,包括如权利要求9所述的耦合结构。A dielectric waveguide filter, characterized by comprising the coupling structure according to claim 9.
PCT/CN2019/090794 2018-11-01 2019-06-11 Dielectric resonance block, dielectric waveguide filter, and coupling structure thereof WO2020087934A1 (en)

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