WO2020087777A1 - 一种显示面板及其显示器件 - Google Patents
一种显示面板及其显示器件 Download PDFInfo
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- WO2020087777A1 WO2020087777A1 PCT/CN2019/070802 CN2019070802W WO2020087777A1 WO 2020087777 A1 WO2020087777 A1 WO 2020087777A1 CN 2019070802 W CN2019070802 W CN 2019070802W WO 2020087777 A1 WO2020087777 A1 WO 2020087777A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
Definitions
- the invention relates to the field of flat display, in particular, a display panel which can be used for OLED, LCD and other surface display devices.
- QD Quant ⁇ m Dots, quantum dots
- the so-called color mixing problem is that, as shown in FIG. 2, a plurality of quantum dot color resists 110 of different colors are usually arranged side by side on the OC (Over Coating, photoresist) layer 102 of the display device substrate 100, and each color resist can only It emits light of one color, which is generally three colors of red, green and blue. Among them, the light emitted between two adjacent color resists will enter the adjacent color resists due to the angle of light emission. Although the BM layer 120 provided above the color resist 110 will play a certain blocking role, as shown by the arrow line in the figure, light will still enter the adjacent color resist 110, so that two colors of light appear Color mixing problem.
- OC Over Coating, photoresist
- the quantum dots in each color resist are excited, the light emitted from the color resist will not return to the color resist, so that the quantum dots in the color resist will not be excited again, so that they are excited
- the luminescence so, causes its light utilization rate to be relatively low.
- One aspect of the present invention is to provide a display panel that can effectively solve the problems of color mixing and low light utilization rate existing in the prior art.
- a display panel includes a substrate.
- a color film layer is provided on the substrate, the color film layer includes a first color resist and a second color resist, wherein the first color resist is provided with quantum dots of a first color, and the second color resist The quantum dots of the second color are arranged inside.
- the color film layer further includes a reflective color resist, the reflective color resist is located between the first color resist and the second color resist; wherein the reflective color resist is in contact with the first color resist and the second color resist The reflectivity of the surface is> 70%.
- the light blocking coefficient OD of the contact surface between the reflective color resist and the glass layer is> 3 / ⁇ m.
- the thickness of the reflective color resist is 3-8 ⁇ m.
- the upper surface of the reflective color resister is vertically higher than the upper surfaces of the first color resister and the second color resister; wherein the lower surface of the reflective color resister is vertically Straight below the lower surfaces of the first color resist and the second color resist.
- the color film layer further includes a third color resist
- a reflective color resist is also provided between the second color resist and the third color resist is provided with a third color resist Three-color quantum dots.
- the color film layer further includes a third color resist, the third color resist, the second color resist, and the first color resist are all provided between the three Said reflective color resistance.
- the first color of the first color resist is red; the second color of the second color resist is green, and the third color of the third color resist is blue.
- a blue light-shielding layer is provided on the first color resist and the second color resist.
- a BM layer is provided between the upper surface of the reflective color resist and the glass layer.
- Another embodiment of the present invention provides a display device including the display panel according to the present invention.
- the present invention relates to a display panel, which is provided with a reflective color resistance having a high light-shielding rate and a high reflectivity between different color resists, and the high reflectivity and high light-shielding property of the emitted color resist to incident light make the incident
- the light can be reflected back to the color resister and then excite the quantum dots inside to emit light again, thereby improving the light utilization rate, and correspondingly reducing the power consumption; at the same time, the incident light that is not reflected back is reflected by the
- the color resist is blocked to prevent it from entering the adjacent color resists of different colors through the reflective color resist, causing a color mixing problem.
- FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
- FIG. 2 is a schematic structural diagram of a display panel in the prior art.
- one embodiment of the present invention provides a display panel, which includes a blue light backlight module 20, a polarizer 22, a substrate 10, an OC layer 12, a color film layer, and a glass layer 24 disposed in this order.
- the color film layer includes a first color resist 14, a second color resist 16, and a third color resist 18 that are arranged at intervals, and these color resists are respectively provided with quantum dots corresponding to their colors, and the light emitted after excitation is, for example, It can be red, green and blue.
- a reflective color resist is provided between each two adjacent color resists to vertically separate the two adjacent color resists.
- the first reflective color resist 11 and the first The three color resists are disposed between the second reflective color resist 13, the third reflective color resist 15 and the fourth reflective color resist 17.
- the color film layer it first coats the materials of the plurality of reflective color resists, wherein the reflective color resists are negative photoresists, and the main component is a polymer, Specifically, it may be a resin material, including but not limited to a phenol resin, a polymer resin containing unsaturated vinyl or methyl vinyl, and the like. Further, the selected material may also be mixed with metal particles, for example, aluminum metal, and the overall color of the reflective color resist after addition is nearly white.
- Vacuuming and pre-baking steps are then performed to eliminate excessive solvent, and then exposure and development steps are performed to transfer the pattern on the mask used in the exposure process to the coated negative photoresist surface, and Finally, the plurality of spaced-apart reflective color resists are formed.
- these different reflection color resisters arranged at intervals are preferably the same material, but not limited to.
- a material with a high shading coefficient and high reflection performance is commonly used for these reflective color resists, wherein the shading coefficient (Optical Density, OD) may be OD> 3 / ⁇ m, where OD The value is preferably 4 / ⁇ m or 4.2 / ⁇ m, and the minimum requirement for high reflectivity may be> 70%, preferably> 80% and above.
- the thickness of the reflective color resist may be 3-8 ⁇ m, and the specific thickness may be selected according to needs and is not limited.
- the first color resist, the second color resist, and the third color resist are sequentially prepared between the two reflective color resists. They are prepared separately because the first color resist, the second color resist, and the third color resist are selected from different materials. For example, they are usually R-type color resist, G-type resist, and B-type resist, respectively, so they need to be prepared separately.
- the preparation of the first color resist as an example, which is to first coat the constituent materials, and the material used is also a negative photoresist, generally a resin material; then after removing too much solvent after vacuuming and pre-baking , The preparation of the first color resist is completed through the steps of exposure and development.
- the forming process of the second color resist and the third color resist is similar to the manufacturing process of the first color resist. To avoid unnecessary repetition, it will not be repeated here.
- the reflected color resistance is preferably higher in the vertical direction and lower than its adjacent color resistance.
- the third reflective color resist 15 and the first reflective color resist 11 provided around or on both sides of the first color resist 14 the upper surfaces of the two reflective color resists 11 and 15 are vertically higher than the first A color resist 14 has a lower surface lower than that of the first color resist 14.
- the second color resister 16 and the third color resister 18 are also set in the same way. To avoid unnecessary repetition, they are not repeated here.
- the blue light emitted by the blue backlight module 20 passes upward through the polarizer 22, the substrate 10, and the OC layer 12 to enter the color resisters, and excites the quantum dots therein to emit light.
- the light emitted from the quantum dots in the first color resist 14 after excitation is red light
- the light emitted after the quantum dots in the second color resist 16 is excited by green light
- the third The light emitted by the quantum dots in the color block 18 is blue light.
- the first color resist 14 and the second color resist 16 are provided with blue light-shielding layers 142 and 162 to block the excess blue light, so as to prevent it from emitting out of the light barrier and causing unnecessary defects.
- the reflective color resists according to the present invention are arranged around each color resist, the light emitted in the surrounding directions by the quantum dots in these color resists will be affected by all The reflected color resist is reflected back into the respective color resist, so that other quantum dots in it can be re-excited, so that the light utilization rate is improved, and the power consumption is correspondingly reduced; at the same time, the unreflected The light is shielded by the reflective color resist to prevent it from entering the adjacent color resists of different colors through the reflective color resist, causing a color mixing problem.
- a BM (black matrix) layer may be provided between the two to avoid the glass layer 24 from Outside incident light passes through the glass layer 24 and is reflected back by the reflective color resist; or the upper surface of the reflective color resist is roughened to reduce the reflective performance of its surface.
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Abstract
一种显示面板,包括基板。其中所述基板上设置有彩膜层,所述彩膜层包括第一色阻和第二色阻,其中所述第一色阻内设置有第一颜色的量子点,所述第二色阻内设置有第二颜色的量子点。其中所述彩膜层还包括反射色阻,所述反射色阻位于第一色阻和第二色阻之间;其中所述反射色阻与所述第一色阻和第二色阻的接触面的反射率>70%,使得其能够将其周围由所述第一色阻内的量子点发出的第一颜色的入射光和第二色阻内的量子点发出的第二颜色的入射光反射回各自的色阻内,进而能够用于再次激发各自色阻内的量子点进行发光,从而有效的提高了光的利用率,相应的也就减小了功耗。
Description
本发明涉及平面显示领域,尤其是,一种可用于OLED、LCD等面显示器件上的显示面板。
已知,QD (Quantμm Dots, 量子点)材料由于拥有较宽的吸收峰和较窄的发射峰,使其在颜色显示上可以表现更高的纯度,从而使得其用到显示器件中时,可以提升显示器件的显示效果。例如,将其应用到LCD中时,其可以有效提升LCD的色域,从而能够增加LCD面板的竞争力。
但是,在具体的实施上却还有很多问题需要攻克。其中一项就是解决量子点色阻(QD Color Filter)的混色和光利用率低的问题。
所谓的混色问题就是,如图2所示,显示器件的基板100的OC(Over Coating,光刻胶)层102上通常会并排设置多个不同颜色的量子点色阻110,每一色阻只能射出一种颜色的光,其一般分别是红、绿、蓝三种颜色的光。其中相邻两色阻之间发出的光,因光发射角度问题,会射入相邻的色阻内。虽然所述色阻110上方设置的BM层120会起到一定的阻挡作用,但如图中箭头线所示,还是会有光线射入到临近的色阻110内,从而出现两种颜色光的混色问题。
相应的,各色阻中的量子点被激发后发出的光从所在色阻中射出后,不会在返回到色阻内,从而也不会再次激发色阻内的量子点,使其再次被激发而发光,如此,导致其光利用率比较低。
因此,确有必要来研发一种新型的显示面板,来克服现有技术中的缺陷。
本发明的一个方面是提供一种显示面板,其能够有效解决现有技术中存在的混色和光利用率低的问题。
本发明采用的技术方案如下:
一种显示面板,包括基板。其中所述基板上设置有彩膜层,所述彩膜层包括第一色阻和第二色阻,其中所述第一色阻内设置有第一颜色的量子点,所述第二色阻内设置有第二颜色的量子点。其中所述彩膜层还包括反射色阻,所述反射色阻位于第一色阻和第二色阻之间;其中所述反射色阻与所述第一色阻和第二色阻的接触面的反射率>70%。
进一步的,在不同实施方式中,其中所述反射色阻与所述玻璃层的接触面的遮光系数OD>3/μm。
进一步的,在不同实施方式中,其中所述反射色阻的厚度在3~8μm。
进一步的,在不同实施方式中,其中所述反射色阻的上表面在竖直向高过所述第一色阻和第二色阻的上表面;其中所述反射色阻的下表面在竖直向低过所述第一色阻和第二色阻的下表面。
进一步的,在不同实施方式中,其中所述彩膜层还包括第三色阻,其与所述第二色阻之间也设置有反射色阻,其中所述第三色阻内设置有第三颜色的量子点。
进一步的,在不同实施方式中,其中所述彩膜层还包括第三色阻,所述第三色阻、所述第二色阻与所述第一色阻三者之间都设置有所述反射色阻。
进一步的,在不同实施方式中,其中所述第一色阻的第一颜色为红色;所述第二色阻的第二颜色为绿色,所述第三色阻的第三颜色为蓝色。
进一步的,在不同实施方式中,其中所述第一色阻与第二色阻上设置有蓝光遮光层。
进一步的,在不同实施方式中,其中所述反射色阻的上表面与所述玻璃层之间设置有BM层。
进一步的,本发明的又一实施方式提供了一种显示器件,其包括本发明涉及的所述显示面板。
本发明涉及的一种显示面板,其在不同色阻之间设置具有高遮光率和高反射性的反射色阻,通过所述发射色阻对于入射光的高反射性和高遮光性,使得入射光能够被反射回所在色阻进而再次激发其内的量子点再次发光,从而提高光的利用率,相应的也就减小了功耗;同时,未被反射回的入射光则被所述反射色阻所遮挡,以避免其穿过所述反射色阻入射到相邻不同颜色的色阻内,造成混色问题。
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明一个实施方式中涉及的一种显示面板的结构示意图;
图2为现有技术中显示面板的结构示意图。
以下将结合附图和实施例,对本发明涉及的一种显示面板及其显示器件的技术方案作进一步的详细描述。
请参阅图1所示,本发明的一个实施方式提供了一种显示面板,包括依次设置的蓝光背光模组20、偏光片22、基板10、OC层12、彩膜层和玻璃层24。
其中所述彩膜层包括间隔设置的第一色阻14、第二色阻16和第三色阻18,这些色阻中分别设置与其颜色对应的量子点,其激发后发出的光,例如,可以分别是红、绿、蓝三种颜色。
进一步的,每两相邻的色阻之间均设置有反射色阻用于竖直向隔开所述两相邻的色阻,如图中所示,所述第一反射色阻11、第二反射色阻13、第三反射色阻15以及第四反射色阻17之间设置有所述三个色阻。
具体的,在一个所述彩膜层的实施制程中,其为先进行所述多个反射色阻的材料涂布,其中所述反射色阻为负性光阻,其主要成分是高分子,具体可以是,树脂材料,包括但不限于酚醛树脂,含有不饱合乙烯基或甲基乙烯基的高分子树脂等等。进一步的,其选用材料内部还可以混有金属粒子,例如,金属铝,添加后所述反射色阻的整体颜色为近白色。
然后进行抽真空、预烘烤步骤以消除过多的溶剂,之后进行曝光以及显影步骤,将曝光过程中所使用的掩模板上的图案转印到涂布的所述负性光阻表面,进而最终形成所述的多个间隔设置的反射色阻。
其中这些间隔设置的不同反射色阻优选相同的材料,但不限于。在一个实施方式中,这些反射色阻共同选用的是一种具有高遮光系数和高反射性能的材料,其中所述的遮光系数(Optical Density, OD)可以是OD >3/μm,其中,OD值优选为4/μm或4.2/μm,所述高反射率最低要求可以是>70%,优选为>80%及以上。进一步的,其中所述反射色阻的厚度可以在3~8μm,具体厚度选择可随需要而定,并无限定。
进一步的,在所述多个反射色阻形成之后,依次在两反射色阻之间进行所述第一色阻、第二色阻和第三色阻的制备。分开依次制备是因为第一色阻、第二色阻和第三色阻选用材料不同,例如,其通常分别为R型色阻、G型色阻以及B型色阻,因此需要分别制备。
以第一色阻的制备为例,其为先进行构成材料的涂布,其选用的材料也为负性光阻,一般为树脂材料;然后经过抽真空和预烘烤消除过多的溶剂后,在通过曝光和显影步骤完成所述第一色阻的制备。所述第二色阻和第三色阻的形成制程与所述第一色阻的制程类似,为避免不必要的重复,此处不再赘述。
进一步的,为保证所述反射色阻能很好的反射其相邻色阻发出的各个角度的入射光,所述反射色阻在竖直向优选高出并低于其相邻色阻。如图中所示,第一色阻14周围或两侧设置的第三反射色阻15和第一反射色阻11,两反射色阻11、15的上表面在竖直向高于所述第一色阻14,其下表面低于所述第一色阻14的下表面。所述第二色阻16和第三色阻18也是同样的设置,为避免不必要的重复,此处不再赘述。
使用时,所述蓝光背光模组20发出的蓝光向上穿过所述偏光片22、基板10、OC层12进入各色阻,并激发其内的量子点使其发光。在本实施方式中,所述第一色阻14内的量子点激发后发出的光是红光,所述第二色阻16内的量子点激发后发出的光是绿光,所述第三色阻18内的量子点激发后发出的光是蓝光。相应的,所述第一色阻14、第二色阻16上均设置有蓝光遮光层142、162,用以遮挡多余的蓝光,以防止其射出色阻外,造成不必要的瑕疵。
如图中所示,由于所述每一色阻的周围均设置有本发明涉及的所述反射色阻,因此,这些色阻内的量子点被激发后发出的向周围方向的光均会被所述反射色阻反射回各自的色阻内,从而能够对其内的其他量子点进行再次激发,如此即提高了光的利用率,又相应的减小了功耗;同时,未被反射回的光则被所述反射色阻所遮蔽,以避免其穿过所述反射色阻入射到相邻不同颜色的色阻内,造成混色问题。
进一步的,所述反射色阻与所述玻璃层24相接的表面,为了更好的显示效果,两者之间可以设置一层BM(black matrix)层,以避免自所述玻璃层24之外的入射光经过所述玻璃层24之后被所述反射色阻反射回;或者对所述反射色阻的上表面进行粗糙化处理,以降低其表面的反射性能。
本发明的技术范围不仅仅局限于上述说明中的内容,本领域技术人员可以在不脱离本发明技术思想的前提下,对上述实施例进行多种变形和修改,而这些变形和修改均应当属于本发明的范围内。
Claims (10)
- 一种显示面板,包括基板;其中所述基板上设置有彩膜层和玻璃层,所述彩膜层包括第一色阻和第二色阻,其中所述第一色阻内设置有第一颜色的量子点,所述第二色阻内设置有第二颜色的量子点;其中所述彩膜层还包括反射色阻,所述反射色阻位于第一色阻和第二色阻之间;其中所述反射色阻与所述第一色阻和第二色阻的接触面的反射率>70%。
- 根据权利要求1所述的显示面板,其中所述反射色阻与所述玻璃层的接触面的遮光系数OD>3/μm。
- 根据权利要求1所述的显示面板,其中所述反射色阻的厚度在3~8μm。
- 根据权利要求1所述的显示面板,其中所述反射色阻的上表面在竖直向高过所述第一色阻和第二色阻的上表面;其中所述反射色阻的下表面在竖直向低过所述第一色阻和第二色阻的下表面。
- 根据权利要求1所述的显示面板,其中所述彩膜层还包括第三色阻,其与所述第二色阻之间也设置有反射色阻,其中所述第三色阻内设置有第三颜色的量子点。
- 根据权利要求1所述的显示面板,其中所述彩膜层还包括第三色阻,所述第三色阻、所述第二色阻与所述第一色阻三者之间都设置有所述反射色阻。
- 根据权利要求6所述的显示面板,其中所述第一色阻的第一颜色为红色;所述第二色阻的第二颜色为绿色,所述第三色阻的第三颜色为蓝色。
- 根据权利要求7所述的显示面板,其中所述第一色阻与第二色阻上设置有蓝光遮光层。
- 根据权利要求1所述的显示面板,其中所述反射色阻的上表面与所述玻璃层之间设置有BM层。
- 一种显示器件,其包括根据权利要求1所述的显示面板。
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| US16/335,250 US20200150327A1 (en) | 2018-10-30 | 2019-01-08 | Display panel and display device |
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| CN201811277841.1A CN109387975B (zh) | 2018-10-30 | 2018-10-30 | 一种显示面板及其显示器件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112133734A (zh) * | 2020-09-29 | 2020-12-25 | 湖北长江新型显示产业创新中心有限公司 | 显示面板及显示装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110320702B (zh) | 2019-07-10 | 2021-11-23 | 京东方科技集团股份有限公司 | 基板及其制备方法、显示面板 |
| CN110687714A (zh) * | 2019-10-14 | 2020-01-14 | 深圳市华星光电技术有限公司 | Coa阵列基板及液晶显示面板 |
| CN110620136B (zh) * | 2019-10-30 | 2022-07-19 | 京东方科技集团股份有限公司 | 显示基板及包含其的显示面板 |
| CN111063269A (zh) * | 2019-12-17 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | 显示面板 |
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| US20200150327A1 (en) | 2020-05-14 |
| CN109387975B (zh) | 2020-11-24 |
| CN109387975A (zh) | 2019-02-26 |
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