WO2020082279A1 - 浅层x射线皮肤治疗装置及系统 - Google Patents

浅层x射线皮肤治疗装置及系统 Download PDF

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Publication number
WO2020082279A1
WO2020082279A1 PCT/CN2018/111742 CN2018111742W WO2020082279A1 WO 2020082279 A1 WO2020082279 A1 WO 2020082279A1 CN 2018111742 W CN2018111742 W CN 2018111742W WO 2020082279 A1 WO2020082279 A1 WO 2020082279A1
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Prior art keywords
ray
light source
cold cathode
skin treatment
dose
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PCT/CN2018/111742
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English (en)
French (fr)
Inventor
梁栋
洪序达
葛永帅
石伟
胡战利
郑海荣
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Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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Priority to PCT/CN2018/111742 priority Critical patent/WO2020082279A1/zh
Publication of WO2020082279A1 publication Critical patent/WO2020082279A1/zh
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/10—X-ray therapy; Gamma-ray therapy; Particle-irradiation therapy

Definitions

  • the present application relates to the technical field of medical equipment, specifically, to a superficial X-ray skin treatment device and system.
  • the purpose of the present application is to provide a superficial X-ray skin treatment device and system, which aims to improve the above problems.
  • a shallow X-ray skin treatment device in a first aspect, includes an X light source array assembly and a main control assembly; the X light source array assembly includes a base and multiple A cold cathode X light source evenly distributed on the base; the cold cathode X light source is electrically connected to the main control component; and the cold cathode X light source works under the control of the main control component.
  • the main control component includes a drive control unit that is electrically connected to the X light source array component; the drive control unit is configured to periodically control the working state of the X light source array component.
  • the superficial X-ray skin treatment device further includes a high voltage source assembly
  • the drive control unit includes a pulse drive module and a circuit switch control module
  • the pulse drive module is electrically connected to a cold cathode X light source, the high voltage
  • the source assembly and the cold cathode X light source are electrically connected by a circuit switch control module
  • the high voltage source assembly is configured to supply power to each of the cold cathode X light sources
  • the pulse drive module is configured to issue periodic
  • the pulse information controls the working state of the cold cathode X light source
  • the circuit switch control module is configured to control the on-off between each cold cathode X light source and the high-voltage source assembly.
  • the cold cathode X light source is disposed in a vacuum chamber of the base and faces a ray window on the base;
  • the cold cathode X light source includes a field emission cold cathode, a grid, a focusing electrode and An anode, the field emission cold cathode, the grid, the focusing electrode, and the anode are sequentially spaced apart; the anode and the field emission cold cathode are at a specified angle, and the anode faces the ray window;
  • the grid, the focusing electrode Both the anode and the anode are electrically connected to the high-voltage source assembly;
  • the grid is configured to provide the electric field required for the field-emission cold cathode to emit electrons under the control of the high-voltage source assembly;
  • the focusing electrode passes through the corresponding The focusing hole focuses the electron beam formed by the electrons emitted from the field emission cold cathode; the anode accelerates the received electron beam to obtain high-energy
  • the high voltage source assembly includes a medium and low voltage power supply and a high voltage power supply; the medium and low voltage power supply is electrically connected to the grid and the focusing electrode, respectively, and the high voltage power supply is electrically connected to the anode.
  • the superficial X-ray skin treatment device further includes a ray filter; the ray filter is disposed in the ray window; and the main control component further includes an energy dose control unit, the energy dose control unit and the The ray filter and the high-voltage source assembly are connected; the high-voltage source assembly and the ray filter are configured to adjust the energy level of the X-ray under the control of the energy dose control unit; the high-voltage source assembly It is also configured to adjust the dose value of the X-ray under the control of the energy dose control unit.
  • the energy dose control unit includes a dose sensing probe, an energy controller and a dose controller, the energy controller is electrically connected to the radiation filter and the high voltage power supply connected to the anode, respectively, the dose control The device is electrically connected to the dose sensing probe and the medium and low voltage power supply connected to the grid; the energy controller is configured to apply high voltage to the anode by controlling the setting of the ray filter and the high voltage power supply Value to adjust the energy level of the X-ray; the dose-sensing probe is configured to sense the dose value of the X-ray emitted from the ray window and feed it back to the dose controller, which is based on the received The received dose value controls the voltage value applied to the grid by the medium and low voltage power supply to adjust the dose value of the X-ray emitted from the radiation window.
  • the superficial X-ray skin treatment device further includes a box and a mechanical arm
  • the main control assembly further includes a robotic arm control unit; the main control assembly is disposed in the box, and one end of the mechanical arm is connected The other end of the box is movably connected to the X light source array assembly, the robot arm control unit is electrically connected to the robot arm, and the robot arm control unit is configured to control the working state of the robot arm to Adjust the position of the X light source array assembly.
  • the base is an annular base or a symmetrical polygonal base.
  • a shallow X-ray skin treatment system provided by an embodiment of the present application includes a host, a display, and the aforementioned shallow X-ray skin treatment device.
  • the host and the main control component are both disposed in the shallow layer In the box of the X-ray skin treatment device, and the host is electrically connected to the main control component and the display respectively; the host is configured to control the working state of the main control component, and the display is configured to provide the user An interactive interface with the host.
  • a shallow X-ray skin treatment device includes an X light source array component and a main control component, wherein the X light source array component includes a base and a plurality of uniformly distributed on the base
  • the cold cathode X light source of the base is replaced by a plurality of light sources to work with a single light source.
  • the required radiation dose is low, which ensures that the radiation energy of the single light source is too high while ensuring the treatment needs, and ensures safe use.
  • the cold cathode X light source is evenly distributed on the base, so that the emitted radiation is uniform, which can effectively shorten the overall irradiation time and improve efficiency.
  • the cold cathode X light source is electrically connected to the main control component.
  • the cold cathode X light source can generate X-rays with controllable energy levels under the control of the main control component, further avoiding the generation of high-energy radiation.
  • FIG. 1 is a schematic structural diagram of a shallow X-ray skin treatment device provided by an embodiment of the present application.
  • FIG. 2 is another schematic diagram of a shallow X-ray skin treatment device provided by an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of the X light source array assembly shown in FIG. 1.
  • FIG. 4 is a schematic diagram of the structure of the cold cathode X light source shown in FIG. 3.
  • FIG. 5 is a schematic diagram of a superficial X-ray skin treatment system provided by an embodiment of the present application.
  • Icons 100-shallow X-ray skin treatment device; 10-X light source array assembly; 11-base; 111-vacuum cavity; 112-ray window; 12-cold cathode X light source; 121-field emission cold cathode; 122- Grid; 123-focusing pole; 124-anode; 20-main control assembly; 21-drive control unit; 22-energy dose control unit; 23-manipulator control unit; 30-high voltage source assembly; 40-box; 50 -Robotic arm; 60-ray filter; 200-shallow X-ray skin treatment system; 201-host; 202-display.
  • the production of scar tissue mainly includes excessive proliferation of dermal fibroblasts and microvessels.
  • the use of radiation can destroy, inhibit or transform fibroblasts and occlude blood vessels to control excessive scar tissue proliferation. Reduce the secretion of sebaceous glands and prevent the increase of scars. At the same time, it can relieve pain and relieve itching, and relieve conscious symptoms.
  • superficial X-ray treatment has become the most important treatment method for the treatment of scars and various skin diseases.
  • X-rays used in superficial X-ray skin treatment equipment are also generated by applying an anode high voltage of 50–100 kV to the hot cathode light source, but the hot cathode light source generates a certain amount of high-energy rays at an anode high voltage of 50–100 kV , And these high-energy rays have the risk of penetrating the skin and causing radiation damage.
  • the principle of the hot cathode light source generating radiation is to heat the hot cathode material to generate an electron beam to bombard the anode with high voltage to reflect X-rays.
  • the energy and the number of electrons of the electron beam generated by heating are uncontrollable.
  • the X-ray energy generated by the bombardment is more difficult to control at a higher anode voltage, which makes the emitted X-rays exist.
  • Some high-energy rays have a risk of penetrating the skin and causing radiation damage.
  • the continuous use time of the hot cathode bulb is limited, so that the entire treatment process needs to be divided into several times, greatly extending the overall treatment time.
  • the embodiments of the present application provide a superficial X-ray skin treatment device and system for improving the above-mentioned problems.
  • FIG. 1 illustrates a superficial X-ray skin treatment device 100 provided by an embodiment of the present application.
  • the above-mentioned superficial X-ray skin treatment device 100 includes an X light source array assembly 10, a main control assembly 20, a high voltage source assembly 30, a cabinet 40, and a robot arm 50.
  • the main control assembly 20 and the high-voltage source assembly 30 are disposed in the box 40.
  • One end of the robot arm 50 is fixed to the box 40, and the other end is movably connected to the X-ray array assembly 10.
  • the X light source array assembly 10, the robot arm 50 and the high voltage source assembly 30 are all electrically connected to the main control assembly 20.
  • the X light source array assembly 10 includes a base 11 and a plurality of cold cathode X light sources 12.
  • one side of the base 11 is connected to the robot arm 50, and the robot arm 50 adjusts the position of the base 11 (for example, the angle and height to the horizontal plane, etc.).
  • the above-mentioned base 11 may be a ring-shaped base 11 or a symmetrical polygonal base 11.
  • the above-mentioned base 11 may be a base 11 having a vacuum chamber 111, and a plurality of radiation windows 112 are provided on the side of the base 11 away from the robot arm 50.
  • the vacuum degree of the vacuum chamber 111 is 10 -6 -10 -11 mm Hg, and the radiation window 112 is evenly distributed on the base 11.
  • each cold cathode X light source 12 is disposed in a vacuum chamber 111, a cold cathode X light source 12 and a ray window 112
  • the radiation emission side of the cold cathode X light source 12 faces the corresponding radiation window 112 so that the radiation emitted by the cold cathode X light source 12 can pass through the radiation window 112.
  • the base 11 is an annular base 11
  • the distribution of the cold cathode X light source 12 on the base 11 is shown in FIG.
  • the cold cathode X light source 12 provided by the embodiment of the present application includes a field emission cold cathode 121, a grid 122, a focusing electrode 123 and an anode 124.
  • the field emission cold cathode 121, the grid 122, the focusing electrode 123, and the anode 124 are sequentially spaced apart, the anode 124 and the field emission cold cathode 121 are at a specified angle, and the anode 124 faces the corresponding ray window 112.
  • the above grid 122, focusing electrode 123 and anode 124 are all electrically connected to the high voltage source assembly 30.
  • the field emission cold cathode 121 includes a substrate and a cold cathode material layer.
  • the substrate is configured to fix the field emission cold cathode 121 to the base of the vacuum chamber 111 of the susceptor 11, and the side of the substrate away from the base is provided with a layer of cold cathode material.
  • the above substrate may be, but not limited to, a metal substrate (for example, a stainless steel sheet, a copper sheet, a titanium sheet or a molybdenum sheet, etc.), a silicon wafer, or conductive glass.
  • the cold cathode material is preferably carbon nanotubes, graphene, and mixtures thereof. It should be noted that the above field emission cold cathode 121 can be prepared by electrophoretic deposition or chemical vapor deposition, and its shape and size can be precisely controlled by a photolithography process.
  • the above grid 122 provides the electric field required for the field emission cold cathode 121 to emit electrons under the control of the high voltage source assembly 30.
  • the above grid 122 includes a grid and a bracket, and the grid is disposed on the bracket.
  • the grid has a certain aperture ratio, so that the electrons emitted by the field emission cold cathode 121 can pass through the grid 122 to reach the anode 124.
  • the grid may be, but not limited to, a tungsten grid or a molybdenum grid.
  • a cold cathode X light source 12 may include at least one focusing pole 123.
  • FIG. 4 is an example in which two focusing poles 123 are used. Of course, more or less focusing poles 123 may also be included.
  • the focusing electrode 123 is provided with a focusing hole, which is configured to focus the electron beam formed by the electrons emitted by the field emission cold cathode 121 to improve the focusing performance of the electron beam.
  • the anode 124 accelerates the received electron beam to obtain high-energy electrons and reflects the X-rays generated by the bombardment of the high-energy electrons.
  • the anode 124 faces the corresponding ray window 112 so that the X-rays It exits from the corresponding ray window 112.
  • the target material used for the anode 124 may be a tungsten target or a molybdenum target.
  • the anode 124 is spaced from the field emission cold cathode 121 at a specified angle. For example, when the field emission cold cathode 121 is parallel to the horizontal plane, the anode 124 is at a specified angle to the horizontal plane.
  • the superficial X-ray skin treatment device 100 may further include a ray filter 60 and a beam limiter. Both the ray filter 60 and the beam limiter are provided in the ray window 112, and the ray filter 60 and the beam limiter are electrically connected to the main control assembly 20.
  • the above-mentioned ray filter 60 filters the X-rays emitted from the ray window 112 under the control of the main control module 20.
  • the above beam limiter is configured to adjust the direction and size of the X-rays emitted from the ray window 112 under the control of the main control assembly 20.
  • the X light source array assembly 10 using a plurality of uniformly distributed cold cathode X light sources 12 replaces the traditional single hot cathode X light source.
  • Multiple cold cathode X light sources 12 work simultaneously, so that the time required to reach the same radiation dose is reduced by multiples, which greatly reduces the treatment time.
  • each cold cathode X light source 12 needs to emit only between 20 and 50 kV, thereby reducing the possibility of generating high-energy X-rays and avoiding high energy The risk of radiation damage through the skin penetrating the skin, enabling safer treatment.
  • the cold cathode X light source 12 is evenly distributed on the X light source array assembly 10, and the ray angle can be adjusted (for example, by the mechanical arm 50 or by the beam limiter), the scar tissue can be simultaneously irradiated from different angles Ensure that the radiation dose of each part of the scar tissue is uniform, and achieve a better treatment effect.
  • the radiated energy level of the cold cathode X light source 12 is more controllable than that of the hot cathode X light source.
  • the high-voltage source assembly 30 includes a medium-low voltage power supply (power supply with a power supply voltage ranging from 1 kV to 5 kV) and a high-voltage power supply (power supply with a power supply voltage ranging from 10 kV to 100 kV).
  • the above-mentioned low-voltage power supply is electrically connected to the grid 122 and the focusing electrode 123, respectively, and the high-voltage power supply is electrically connected to the anode 124.
  • the main control component 20 is configured to control the working state of the X light source array component 10.
  • the main control assembly 20 includes a drive control unit 21, an energy dose control unit 22 and a robot arm control unit 23.
  • the drive control unit 21 is electrically connected to the high voltage source assembly 30 and the energy dose control unit 22, respectively.
  • the drive control unit 21 is electrically connected to the X light source array assembly 10, and the drive control unit 21 is configured to periodically control the working state of the X light source array assembly 10.
  • the drive control unit 21 includes a pulse drive module and a circuit switch control module.
  • the pulse driving module is electrically connected to the cold cathode X light source 12, and the high voltage source assembly 30 and each cold cathode X light source 12 are electrically connected by a circuit switch control module.
  • the above pulse driving module is configured to control the working state of the cold cathode X light source 12 by sending periodic pulse information.
  • the above-mentioned pulse driving module can realize pulse emission by controlling the cold cathode X light source 12 by the modulated periodic pulse signal, and can also adjust the exposure time of the radiation emitted by the cold cathode X light source 12.
  • the circuit switch control module is configured to control the on-off between each of the cold cathode X light source 12 and the high-voltage source assembly 30. Thus, multiple cold cathode X light sources 12 can be turned on and off simultaneously.
  • the drive control unit 21 may be composed of a drive circuit, a control circuit, and an isolation protection circuit.
  • the IGBT-based driving circuit is configured to realize the control of the weak electric signal to the strong electric signal (kilovolt high voltage);
  • the FPGA-based control circuit is configured to realize the output of the programmable signal with high time accuracy;
  • the isolation circuit ensures the drive control unit 21 Effective protection.
  • the cooperation of the cold cathode X light source 12 and the drive control unit 21 is used to enable the cold cathode X light source 12 to realize high-speed pulse emission of rays.
  • the anode 124 of the cold cathode X light source 12 has low accumulated heat during the process of high-speed pulse emission of the cold cathode X light source 12 and can work continuously and stably for a long time, avoiding the heat dissipation limitation of the light source anode 124, so that the light source can be used for a long time continue working. While ensuring the life of the light source, there is no need for treatment in fractions, shortening the overall treatment duration, and improving treatment efficiency.
  • the energy dose control unit 22 is electrically connected to the ray filter 60 and the high voltage source assembly 30, respectively, and is configured to adjust the energy dose radiated from the cold cathode X light source 12.
  • the high voltage source assembly 30 and the radiation filter 60 are configured to adjust the energy level of the X-ray under the control of the energy dose control unit 22.
  • the high-voltage power supply in the high-voltage source assembly 30 adjusts and adjusts the high voltage applied to the anode 124 under the control of the energy dose control unit 22 to thereby control the energy level of X-rays
  • the ray filter 60 also controls the energy dose control unit 22.
  • the X-rays emitted from the X-ray window 112 are filtered to control the energy level of the X-rays.
  • the high-voltage source assembly 30 is further configured to adjust the dose value of the X-ray under the control of the energy dose control unit 22.
  • the high-voltage source assembly 30 is further configured to adjust the dose value of the X-ray under the control of the energy dose control unit 22.
  • the energy dose control unit 22 includes a dose sensing probe, an energy controller, and a dose controller.
  • the energy controller is electrically connected to the ray filter 60 and the high-voltage power supply connected to the anode 124 respectively.
  • the above energy controller is configured to adjust the energy level of the X-ray by controlling the setting of the ray filter 60 and the high voltage value applied to the anode 124 by the high voltage power source.
  • the dose controller is electrically connected to the dose sensing probe and the medium and low voltage power supply connected to the grid 122 respectively.
  • the above-mentioned dose sensing probe is configured to sense the dose value of the X-ray emitted from the ray window 112 and feed it back to the dose controller. Based on the received dose value, the dose controller controls the voltage value applied to the grid 122 by the medium and low voltage power supply, thereby adjusting the X-tube current to adjust the dose value of the X-rays emitted from the radiation window 112.
  • the radiation energy and dose generated when the superficial X-ray skin treatment device 100 is used can be effectively controlled to avoid radiation damage and ensure safe use.
  • the robot arm control unit 23 is electrically connected to the robot arm 50.
  • the robot arm control unit 23 is configured to control the working state of the robot arm 50 to adjust the position of the X light source array assembly 10.
  • the robotic arm control unit 23 can control the movement state of the robotic arm 50, and then adjust the position of the X-ray array assembly 10, so that the X-ray array assembly 10 can be driven to move in horizontal displacement, vertical displacement, and rotation.
  • FIG. 5 illustrates a superficial X-ray skin treatment system 200 provided by an embodiment of the present application.
  • the above shallow X-ray skin treatment system 200 includes a host 201, a display 202, and the shallow X-ray skin treatment device 100 provided in the first embodiment.
  • the host 201, the main control assembly 20, and the high-voltage source assembly 30 are all integrated into the cabinet 40 of the superficial X-ray skin treatment device 100.
  • the host 201 is electrically connected to the main control component 20, the high voltage source component 30, and the display 202, respectively.
  • the host 201 is configured to control the working state of the main control component 20, and the display 202 is configured to provide an interactive interface with the host 201 to the user.
  • the above shallow X-ray skin treatment device includes an X light source array component and a main control component;
  • the X light source array component includes a base and a plurality of cold cathode X light sources uniformly distributed on the base;
  • the cold cathode X The light source is electrically connected to the main control component;
  • the cold cathode X light source works under the control of the main control component. Reduce the radiation dose to ensure safe use.
  • the cold cathode X light source is evenly distributed on the base, so that the emitted radiation is uniform, which can effectively shorten the overall irradiation time and improve efficiency.
  • the cold cathode X light source can generate X-rays with controllable energy levels under the control of the main control component, further avoiding the generation of high-energy radiation.
  • the high-pulse radiation emitted by the cold cathode X light source improves the heat accumulation of the light source itself during long-term use. While ensuring the service life of the light source, it delays the continuous use of a single treatment and improves the treatment efficiency.

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Abstract

一种浅层X射线皮肤治疗装置（100），包括X光源阵列组件（10）及主控组件（20）；X光源阵列组件（10）包括基座（11）和多个均匀分布于基座（11）的冷阴极X光源（12）；冷阴极X光源（12）与主控组件（20）电性连接；冷阴极X光源（10）在主控组件（20）的控制下工作，降低了辐射剂量，射线分布均匀，辐射能量可控制，避免产生高能辐射，提高效果，确保使用安全。

Description

浅层X射线皮肤治疗装置及系统 技术领域
本申请涉及医疗设备技术领域，具体而言，涉及浅层X射线皮肤治疗装置及系统。
背景技术
随着我国经济发展快速发展，人们生活的环境也随之快速变化。包括皮肤癌、角化性疾病、各类皮肤炎症和病毒性皮肤病等在内的皮肤疾病的发病率也逐年升高。另外，人们对美容健康越来越重视，对手术或意外伤害造成的皮肤瘢痕(例如增生性瘢痕、瘢痕疙瘩或瘢痕肿瘤等)的治疗需求也越来越大。
目前，浅层X射线治疗已成为治疗瘢痕和各种皮肤疾病的最重要的治疗方法。现有的浅层X射线治疗设备利用单个热阴极光源发射出的X射线。然而，为了满足治疗需求，往往需要给热阴极光源施加50–100kV的阳极高压，而热阴极光源在50–100kV的阳极高压下会产生一定数量的高能射线，这些高能射线有穿透皮肤造成辐射伤害的风险。且由于热阴极光源自身热容量限制等原因，可持续工作时间短，大大增加了治疗时间。
发明内容
本申请的目的在于提供一种浅层X射线皮肤治疗装置及系统，其旨在改善上述问题。
第一方面，本申请实施例提供的一种浅层X射线皮肤治疗装置，所述浅层X射线皮肤治疗装置包括X光源阵列组件及主控组件；所述X光源阵列组件包括基座和多个均匀分布于所述基座的冷阴极X光源；所述冷阴极X光源与所述主控组件电性连接；所述冷阴极X光源在所述主控组件的控制下工作。
进一步地，所述主控组件包括驱动控制单元，所述驱动控制单元与所述X光源阵列组件电性连接；所述驱动控制单元配置成周期性地控制所述X光源阵列组件的工作状态。
进一步地，所述浅层X射线皮肤治疗装置还包括高压源组件，所述驱动控制单元包括脉冲驱动模块和电路开关控制模块，所述脉冲驱动模块与冷阴极X光源电性连接，所述高压源组件与所述冷阴极X光源之间通过电路开关控制模块电性连接；所述高压源组件配置成向每一所述冷阴极X光源供电，所述脉冲驱动模块配置成通过发出周期性的脉冲信息控制所述冷阴极X光源的工作状态；所述电路开关控制模块配置成控制每一个所述冷阴极X光源与所述高压源组件之间的通断。
进一步地，所述冷阴极X光源设置于所述基座的真空腔内，且朝向所述基座上的一射线窗口；所述冷阴极X光源包括场发射冷阴极、栅极、聚焦极和阳极，所述场发射冷阴极、栅极、聚焦极和阳极依次间隔设置；所述阳极与场发射冷阴极之间呈指定角度，所述阳极面向所述射线窗口；所述栅极、聚焦极和阳极均与所述高压源组件电性连接；所述栅极配置成在所述高压源组件的控制下提供所述场发射冷阴极发射出电子所需的电场；所述聚焦极通过对应的聚焦孔聚焦所述场发射冷阴极发射出的所述电子形成的电子束；所述阳极对接收到所述电子束进行加速，以获得高能电子并反射出所述高能电子轰击产生的X射线，以使所述X射线从对应的所述射线窗口射出。
进一步地，所述高压源组件包括中低压电源和高压电源；所述中低压电源分别与所述栅极和聚焦极电性连接，所述高压电源与所述阳极电性连接。
进一步地，所述浅层X射线皮肤治疗装置还包括射线滤波器；所述射线滤波器设置于所述射线窗口；所述主控组件还包括能量剂量控制单元，所述能量剂量控制单元分别与所述射线滤波器及所述高压源组件连接；所述高压源组件及所述射线滤波器配置成在所述能量剂量控制单元的控制下调节所述X射线的能量水平；所述高压源组件还配置成在所述能量剂量控制单元的控制下调节所述X射线的剂量值。
进一步地，所述能量剂量控制单元包括剂量感知探头、能量控制器及剂量控制器，所述能量控制器分别与所述射线滤波器及连接所述阳极的高压电源电性连接，所述剂量控制器分别与所述剂量感知探头及连接所述栅极的中低压电源电性连接；所述能量控制器配置成通过控制所述射线滤波器的设置和所述高压电源施加于所述阳极的高压值来调节所述X射线的能量水平；所述剂量感知探头配置成感知从所述射线窗口射出的所述X射线的剂量值，并反馈至所述剂量控制器，所述剂量控制器基于接收到的所述剂量值控制所述中低压电源施加于所述栅极的电压值，以调整从所述射线窗口射出的所述X射线的剂量值。
进一步地，所述浅层X射线皮肤治疗装置还包括箱体和机械臂，所述主控组件还包括机械臂控制单元；所述主控组件设置于所述箱体内，所述机械臂一端连接所述箱体，另一端与所述X光源阵列组件活动连接，所述机械臂控制单元与所述机械臂电性连接，所述机械臂控制单元配置成控制所述机械臂的工作状态，以调整所述X光源阵列组件的位置。
进一步地，所述基座为环形基座或对称多边形基座。
第二方面，本申请实施例提供的一种浅层X射线皮肤治疗系统，包括主机、显示器及前述浅层X射线皮肤治疗装置，所述主机和所述主控组件均设置于所述浅层X射线 皮肤治疗装置的箱体内，且所述主机分别与所述主控组件及显示器均电性连接；所述主机配置成控制所述主控组件的工作状态，所述显示器配置成向用户提供与所述主机之间的交互界面。
与现有技术的区别，本申请实施例提供的一种浅层X射线皮肤治疗装置包括X光源阵列组件及主控组件，其中，X光源阵列组件包括基座和多个均匀分布于所述基座的冷阴极X光源，由多个光源替代单个光源工作，于单个光源而言所需提供的辐射剂量低，在确保满足治疗需求的同时避免单个光源的辐射能量过高，确保使用安全。同时，冷阴极X光源在基座上均匀分布，使发出的射线均匀，可有效缩短整体的照射时长，提高效率。另外，冷阴极X光源与主控组件电性连接，冷阴极X光源可以在主控组件的控制下产生能量水平可控的X射线，进一步地避免产生高能辐射。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1为本申请实施例提供的一种浅层X射线皮肤治疗装置的结构示意图。
图2为本申请实施例提供的一种浅层X射线皮肤治疗装置的另一种示意图。
图3为图1中示出的X光源阵列组件的结构示意图。
图4为图3中示出的冷阴极X光源的结构示意图。
图5为本申请实施例提供的一种浅层X射线皮肤治疗系统的示意图。
图标：100-浅层X射线皮肤治疗装置；10-X光源阵列组件；11-基座；111-真空腔；112-射线窗口；12-冷阴极X光源；121-场发射冷阴极；122-栅极；123-聚焦极；124-阳极；20-主控组件；21-驱动控制单元；22-能量剂量控制单元；23-机械臂控制单元；30-高压源组件；40-箱体；50-机械臂；60-射线滤波器；200-浅层X射线皮肤治疗系统；201-主机；202-显示器。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚且完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。
因此，以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围，而是仅仅表示本申请的选定实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。
瘢痕组织的产生主要有真皮纤维细胞和微血管的过度增生，利用放射线照射可破坏、抑制或转化纤维母细胞并可使血管闭塞，控制过量的瘢痕组织增生。减少皮脂腺的分泌，防止诱发加重瘢痕。同时可镇痛和止痒，缓解自觉症状。随着治疗技术的不断发展，目前，浅层X射线治疗已成为治疗瘢痕和各种皮肤疾病的最重要的治疗方法。
相关技术中，浅层X射线皮肤治疗设备所用X射线同时是通过给热阴极光源施加50–100kV的阳极高压产生，但是，热阴极光源在50–100kV的阳极高压下会产生一定数量的高能射线，而这些高能射线有穿透皮肤造成辐射伤害的风险。同时，热阴极光源产生射线的原理为加热热阴极材料产生电子束轰击加了高压的阳极，以反射出X射线。一方面，采用加热的方式产生的电子束本身能量和电子数量则不可控，另一方面，在较高的阳极电压下使轰击产生的X射线能量更加难以掌控，使得发射出的X射线中存在部分高能射线。高能射线有穿透皮肤造成辐射伤害的风险。并且，由于采用单一的热阴极球管本身热容量有限，为了避免球管被烧坏，热阴极球管的连续使用时长有限，使得整个治疗过程需要分几次进行，大大延长整体治疗时间。此外，对于面积较大的瘢痕组织，X射线的中心和边缘部分会有较明显差异，导致不同瘢痕部位所接收到的辐射剂量不一致，使得辐射剂量较低的部位治疗效果降低，有复发的风险。
因此，本申请实施例提供了一种浅层X射线皮肤治疗装置及系统，用于改善上述问题。
第一实施例
请参阅图1，图1示出本申请实施例提供的一种浅层X射线皮肤治疗装置100。上述浅层X射线皮肤治疗装置100包括X光源阵列组件10、主控组件20、高压源组件30、箱体40和机械臂50。上述主控组件20和高压源组件30设置于箱体40内，上述机械臂50的一端固定于箱体40，另一端与X光源阵列组件10活动连接。进一步地，如图2所示，上述X光源阵列组件10、机械臂50和高压源组件30均与所述主控组件20电性连接。
进一步地，上述X光源阵列组件10包括基座11及多个冷阴极X光源12。可选地， 上述基座11的一侧与机械臂50连接，由机械臂50调整基座11位置(例如，与水平面之间的夹角和高度等)。
可选地，上述基座11可以是环形基座11或对称多边形基座11。
进一步地，上述基座11可以是具有真空腔111的基座11，基座11远离了机械臂50的一侧设置多个射线窗口112。优选地，真空腔111的真空度为10 -6-10 -11毫米汞柱，射线窗口112均匀分布于基座11。可选地，上述多个冷阴极X光源12均匀的分布于基座11上，具体地，每一个冷阴极X光源12均设置于真空腔111内，一冷阴极X光源12与一射线窗口112相对，冷阴极X光源12的射线发射侧朝向对应的射线窗口112，以使冷阴极X光源12发射出的射线可从射线窗口112穿出。例如，在基座11为环形基座11时，冷阴极X光源12在基座11上的分布如图3示。
可选地，如图4示，本申请实施例提供的冷阴极X光源12包括场发射冷阴极121、栅极122、聚焦极123和阳极124。上述场发射冷阴极121、栅极122、聚焦极123和阳极124依次间隔设置，上述阳极124与场发射冷阴极121之间呈指定角度，且阳极124面向对应的射线窗口112。上述的栅极122、聚焦极123和阳极124均与高压源组件30电性连接。
可选地，上述场发射冷阴极121包括衬底和冷阴极材料层。衬底配置成将场发射冷阴极121固定于基座11真空腔111的底座，衬底远离底座的一侧设置有冷阴极材料层。优选地，上述衬底可以是，但不限于是，金属基板(例如，不锈钢片、铜片、钛片或钼片等)、硅片或者导电玻璃。上述冷阴极材料优选为碳纳米管、石墨烯及其它们的混合物。需要说明的是，上述场发射冷阴极121可以通过电泳沉积法或者化学气相沉积法制备，其形状和尺寸可以通过光刻工艺进行精确控制。
可选地，上述栅极122在所述高压源组件30的控制下提供所述场发射冷阴极121发射出电子所需的电场。具体地，上述栅极122包括栅网和支架，栅网设置于支架上。栅网具有一定的开口率，使场发射冷阴极121发射出的电子能够透过栅极122到达阳极124，上述栅网可以是，但不限于是钨网或者钼网。
可选地，一冷阴极X光源12可以包括至少一个聚焦极123，图4为采用2个聚焦极123的示例，当然还可以包括更多或者更少的聚焦极123。聚焦极123上设置有聚焦孔，配置成聚焦由场发射冷阴极121发射出的电子形成的电子束，以提高电子束的聚性能。
可选地，上述阳极124对接收到所述电子束进行加速，以获得高能电子并反射出所述高能电子轰击产生的X射线，上述阳极124面向对应的射线窗口112，以使所述X射 线从对应的所述射线窗口112射出。可选地，阳极124所采用的靶材料可以是钨靶或者钼靶。阳极124与场发射冷阴极121之间间隔，且呈指定的角度。例如，场发射冷阴极121与水平面平行时，则阳极124与水平面成指定角度。
进一步地，本申请实施例提供的浅层X射线皮肤治疗装置100还可以包括射线滤波器60和限束器。上述射线滤波器60和限束器均设置于射线窗口112，射线滤波器60和限束器均与主控组件20电性连接。上述射线滤波器60在主控组件20的控制下对从射线窗口112射出的所述X射线进行过滤。上述限束器配置成在主控组件20的控制下调节从射线窗口112射出的X射线的方向和大小。
需要说明的是，本申请实施例中，采用多个均匀分布的冷阴极X光源12的X光源阵列组件10替代了传统的单个热阴极X光源。多个冷阴极X光源12同时工作，使得达到相同辐射剂量所需时间成倍数减小，这些都大大降低了治疗时间。同时，在发输出满足相同治疗需求的射线时，对于X光源阵列组件10中每一个单个的光源而言，所需发射出的能量均比相关技术中在单个热阴极光源所需发射出的能量少，例如，采用10～100个冷阴极X光源12，每个冷阴极X光源12所需发射出的能量仅需在20～50kV之间，从而降低了产生高能X射线的可能，避免出现高能射线穿透皮肤造成辐射伤害的风险，实现更加安全的治疗。
另外，由于X光源阵列组件10上冷阴极X光源12分布均匀，且射线角度可以进行调整(例如，通过机械臂50调整或者通过限束器调整)，从而可以从不同角度同时照射瘢痕组织，能够保证瘢痕组织各个部位的辐射剂量均匀，实现更好的治疗效果。
同时，冷阴极X光源12相较于热阴极X光源而言，辐射出的能量水平更加可控。
在本申请实施例中，上述高压源组件30包括中低压电源(供电电压范围为1kV～5kV的电源)和高压电源(供电电压范围为10kV～100kV的电源)。上述中低压电源分别与栅极122和聚焦极123电性连接，高压电源与阳极124电性连接。
在本申请实施例中，上述主控组件20配置成控制X光源阵列组件10的工作状态。具体地，主控组件20包括驱动控制单元21、能量剂量控制单元22及机械臂控制单元23。
可选地，上述驱动控制单元21分别与高压源组件30及能量剂量控制单元22电性连接。上述驱动控制单元21与X光源阵列组件10电性连接，驱动控制单元21配置成周期性地控制X光源阵列组件10的工作状态。
具体地，上述驱动控制单元21包括脉冲驱动模块和电路开关控制模块。脉冲驱动模块与冷阴极X光源12电性连接，上述高压源组件30与每一个冷阴极X光源12之间 通过电路开关控制模块电性连接。上述脉冲驱动模块配置成通过发出周期性的脉冲信息控制冷阴极X光源12的工作状态。具体地，上述脉冲驱动模块可以通过调制的周期性的脉冲信号的控制冷阴极X光源12实现脉冲发射，并还可以调节冷阴极X光源12发射出射线的曝光时间。所述电路开关控制模块配置成控制每一个所述冷阴极X光源12与所述高压源组件30之间的通断。从而，可以实现多个冷阴极X光源12的同时开启和关闭。
作为一种实施方式，上述驱动控制单元21可以由驱动电路、控制电路和隔离保护电路组成。其中，基于IGBT的驱动电路配置成实现弱电信号对强电信号(千伏高压)的控制；基于FPGA的控制电路配置成实现高时间精度的可编程信号的输出；隔离电路确保对驱动控制单元21进行有效的保护。
需要说明的是，本申请实施例中，采用冷阴极X光源12与驱动控制单元21的配合，使冷阴极X光源12可实现射线的高速脉冲发射。通过海量实验证明，冷阴极X光源12采用高速脉冲发射的过程中冷阴极X光源12的阳极124累积热量低，能够长时间连续稳定工作，避免受到光源阳极124散热限制，使得光源可以长时间的持续工作。在保障光源寿命的同时，无需分次治疗，缩短整体的治疗时长，提高治疗效率。
可选地，上述能量剂量控制单元22分别与射线滤波器60及高压源组件30连接电性连接，配置成调剂从冷阴极X光源12辐射出的能量剂量。可选地，高压源组件30及射线滤波器60配置成在所述能量剂量控制单元22的控制下调节所述X射线的能量水平。具体地，高压源组件30中高压电源在能量剂量控制单元22的控制下调节调整施加于阳极124的高压，从而控制X射线的能量水平，射线滤波器60则也在能量剂量控制单元22的对射线窗口112射出的所述X射线进行过滤，从而控制X射线的能量水平。
可选地，高压源组件30还配置成在能量剂量控制单元22的控制下调节所述X射线的剂量值。从而，进一步地，确保整个装置的运行过程中的辐射安全。
可选地，上述能量剂量控制单元22包括剂量感知探头、能量控制器及剂量控制器。
具体地，能量控制器分别与射线滤波器60及连接所述阳极124的高压电源电性连接。上述能量控制器配置成通过控制所述射线滤波器60的设置和所述高压电源施加于所述阳极124的高压值来调节所述X射线的能量水平。
具体地，剂量控制器分别与所述剂量感知探头及连接所述栅极122的中低压电源电性连接。上述剂量感知探头配置成感知从所述射线窗口112射出的所述X射线的剂量值，并反馈至剂量控制器。剂量控制器基于接收到的该剂量值，控制中低压电源施加于所述栅极122的电压值，从而调节X管电流，以调整从射线窗口112射出的X射线的剂量 值。
从而将使用浅层X射线皮肤治疗装置100时产生的辐射能量和剂量有效的控制，避免产生对辐射伤害，确保使用安全。
可选地，机械臂控制单元23与所述机械臂50电性连接。机械臂控制单元23配置成控制机械臂50的工作状态，以调整X光源阵列组件10的位置。具体地，机械臂控制单元23可以控制机械臂50的运动状态，进而调整X光源阵列组件10的位置，可实现带动X光源阵列组件10在水平位移、垂直位移和旋转等运动。
第二实施例
请参阅图5，图5示出本申请实施例提供的一种浅层X射线皮肤治疗系统200。上述浅层X射线皮肤治疗系统200包括主机201、显示器202及第一实施例提供的浅层X射线皮肤治疗装置100。
可选地，上述主机201、主控组件20及高压源组件30均集成于浅层X射线皮肤治疗装置100的箱体40。上述主机201分别与主控组件20、高压源组件30及显示器202均电性连接。主机201配置成控制所述主控组件20的工作状态，显示器202配置成向用户提供与所述主机201之间的交互界面。
综上所述，本申请实施例提供的一种浅层X射线皮肤治疗装置及系统。其中，上述浅层X射线皮肤治疗装置包括X光源阵列组件及主控组件；所述X光源阵列组件包括基座和多个均匀分布于所述基座的冷阴极X光源；所述冷阴极X光源与所述主控组件电性连接；所述冷阴极X光源在所述主控组件的控制下工作。降低辐射剂量，确保使用安全。冷阴极X光源在基座上均匀分布，使发出的射线均匀，可有效缩短整体的照射时长，提高效率。另外，冷阴极X光源可以在主控组件的控制下产生能量水平可控的X射线，进一步地避免产生高能辐射。冷阴极X光源发射出的高脉冲射线改善长时间使用过程中光源本身的热量积累，在确保光源使用寿命的同时，延迟单次治疗的持续使用时长，提高治疗效率。
以上所述仅为本申请的优选实施例而已，并不用于限制本申请，对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换和改进等，均应包含在本申请的保护范围之内。
在本申请的描述中，需要理解的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”或“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该发明产品使用时惯常摆放的方位或位置关系，或者是本领域技术人员惯常理解的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的设备或 元件必须具有特定的方位或以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”或“第三”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
在本申请的描述中，还需要说明的是，除非另有明确的规定和限定，术语“设置”、“安装”、“相连”或“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。

Claims (10)

  1. 一种浅层X射线皮肤治疗装置，其特征在于，所述浅层X射线皮肤治疗装置包括X光源阵列组件及主控组件；所述X光源阵列组件包括基座和多个均匀分布于所述基座的冷阴极X光源；所述冷阴极X光源与所述主控组件电性连接；所述冷阴极X光源在所述主控组件的控制下工作。
  2. 如权利要求1所述的浅层X射线皮肤治疗装置，其特征在于，所述主控组件包括驱动控制单元，所述驱动控制单元与所述X光源阵列组件电性连接；所述驱动控制单元配置成周期性地控制所述X光源阵列组件的工作状态。
  3. 如权利要求2所述的浅层X射线皮肤治疗装置，其特征在于，所述浅层X射线皮肤治疗装置还包括高压源组件，所述驱动控制单元包括脉冲驱动模块和电路开关控制模块，所述脉冲驱动模块与冷阴极X光源电性连接，所述高压源组件与所述冷阴极X光源之间通过电路开关控制模块电性连接；
    所述高压源组件配置成向每一所述冷阴极X光源供电，所述脉冲驱动模块配置成通过发出周期性的脉冲信息控制所述冷阴极X光源的工作状态；
    所述电路开关控制模块配置成控制每一个所述冷阴极X光源与所述高压源组件之间的通断。
  4. 如权利要求3所述的浅层X射线皮肤治疗装置，其特征在于，所述冷阴极X光源设置于所述基座的真空腔内，且朝向所述基座上的一射线窗口；
    所述冷阴极X光源包括场发射冷阴极、栅极、聚焦极和阳极，所述场发射冷阴极、栅极、聚焦极和阳极依次间隔设置；所述阳极与场发射冷阴极之间呈指定角度，所述阳极面向所述射线窗口；所述栅极、聚焦极和阳极均与所述高压源组件电性连接；
    所述栅极配置成在所述高压源组件的控制下提供所述场发射冷阴极发射出电子所需的电场；
    所述聚焦极通过对应的聚焦孔聚焦所述场发射冷阴极发射出的所述电子形成的电子束；
    所述阳极对接收到所述电子束进行加速，以获得高能电子并反射出所述高能电子轰击产生的X射线，以使所述X射线从对应的所述射线窗口射出。
  5. 如权利要求4所述的浅层X射线皮肤治疗装置，其特征在于，所述高压源组件包括中低压电源和高压电源；所述中低压电源分别与所述栅极和聚焦极电性连 接，所述高压电源与所述阳极电性连接。
  6. 如权利要求5所述的浅层X射线皮肤治疗装置，其特征在于，所述浅层X射线皮肤治疗装置还包括射线滤波器；所述射线滤波器设置于所述射线窗口；所述主控组件还包括能量剂量控制单元，所述能量剂量控制单元分别与所述射线滤波器及所述高压源组件连接；
    所述高压源组件及所述射线滤波器配置成在所述能量剂量控制单元的控制下调节所述X射线的能量水平；
    所述高压源组件还配置成在所述能量剂量控制单元的控制下调节所述X射线的剂量值。
  7. 如权利要求6所述的浅层X射线皮肤治疗装置，其特征在于，所述能量剂量控制单元包括剂量感知探头、能量控制器及剂量控制器，所述能量控制器分别与所述射线滤波器及连接所述阳极的高压电源电性连接，所述剂量控制器分别与所述剂量感知探头及连接所述栅极的中低压电源电性连接；
    所述能量控制器配置成通过控制所述射线滤波器的设置和所述高压电源施加于所述阳极的高压值来调节所述X射线的能量水平；
    所述剂量感知探头配置成感知从所述射线窗口射出的所述X射线的剂量值，并反馈至所述剂量控制器，所述剂量控制器基于接收到的所述剂量值控制所述中低压电源施加于所述栅极的电压值，以调整从所述射线窗口射出的所述X射线的剂量值。
  8. 如权利要求1所述的浅层X射线皮肤治疗装置，其特征在于，所述浅层X射线皮肤治疗装置还包括箱体和机械臂，所述主控组件还包括机械臂控制单元；所述主控组件设置于所述箱体内，所述机械臂一端连接所述箱体，另一端与所述X光源阵列组件活动连接，所述机械臂控制单元与所述机械臂电性连接，所述机械臂控制单元配置成控制所述机械臂的工作状态，以调整所述X光源阵列组件的位置。
  9. 如权利要求1所述的浅层X射线皮肤治疗装置，其特征在于，所述基座为环形基座或对称多边形基座。
  10. 一种浅层X射线皮肤治疗系统，其特征在于，包括主机、显示器及如权利要求1-9任意一项所述的浅层X射线皮肤治疗装置，所述主机和所述主控组件均设置于所述浅层X射线皮肤治疗装置的箱体内，且所述主机分别与所述主控组件及显示器均电性连接；所述主机配置成控制所述主控组件的工作状态，所述显示器配置成向用户提供与所述主机之间的交互界面。
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