WO2020080592A1 - Accéléromètre mems et son procédé de fabrication - Google Patents

Accéléromètre mems et son procédé de fabrication Download PDF

Info

Publication number
WO2020080592A1
WO2020080592A1 PCT/KR2018/013976 KR2018013976W WO2020080592A1 WO 2020080592 A1 WO2020080592 A1 WO 2020080592A1 KR 2018013976 W KR2018013976 W KR 2018013976W WO 2020080592 A1 WO2020080592 A1 WO 2020080592A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
electrodes
mems accelerometer
moving
line width
Prior art date
Application number
PCT/KR2018/013976
Other languages
English (en)
Korean (ko)
Inventor
고율
이상철
강병근
이성단
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Publication of WO2020080592A1 publication Critical patent/WO2020080592A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/06—Devices comprising elements which are movable in relation to each other, e.g. slidable or rotatable

Definitions

  • the present invention relates to a MEMS (Microelectromechanical Syetem) accelerometer and a method for manufacturing the same. More specifically, in a MEMS structure manufacturing process in which the minimum line width is limited to d in mass production foundries, the gap between MEMS electrodes can be narrowed to d to be applied to a technical field that simultaneously satisfies high frequency response and sensor sensitivity.
  • MEMS Microelectromechanical Syetem
  • the effect that can be obtained through MEMS technology can be selected first.
  • the application fields of MEMS optical sensors aimed at lower cost are car navigation, vehicle airbag control, camera or video camera shake prevention, cell phone, robot posture control, game gesture input recognition, HDD rotation and shock detection.
  • 1 is a view for explaining the basic operation principle of the MEMS accelerometer.
  • a schematic MEMS accelerometer is constructed with a proof-mase suspended in a reference frame.
  • the dynamic behavior of device motion can be expressed using Newton's second law of motion (Eq. (2-1)).
  • the MEMS accelerometer is a secondary spring-mass-damper system, and the operating bandwidth is mostly resonant frequency. It can be determined by. Therefore, a high resonance frequency is required to obtain an acceleration sensing function in a wide frequency range.
  • the piezoelectric accelerometer, the piezoresistive accelerometer, and the capacitive accelerometer may be classified according to a conversion mechanism for a method for converting proof-mass movement into an electrical signal.
  • the piezoresistive accelerometer is not commercially available because it is difficult to form a piezoelectric material in a thin film state having good characteristics without static characteristics.
  • the piezo-resistive accelerometer since the piezo-resistive accelerometer has a large characteristic change due to temperature change, and its compensation is difficult, the recent technological trend of the accelerometer sensor is toward the capacitive type.
  • capacitive accelerometers have excellent characteristics because they have a small change in characteristics with temperature, and the signal processing circuit can be configured as a field-effect transistor with excellent integration without a separate process. You can.
  • Capacitive accelerometers use a varying capacitance between the proof-mass and the sensing electrode to detect external acceleration. This type of sensing can achieve low power operation and reduce the silicon process. It has the advantage of being easy to implement.
  • FIG. 2 is a conceptual diagram schematically illustrating a capacitive accelerometer.
  • Equation (2-4) the distance between the proof-mass and the sensing electrode is d, and consequently, as shown in Equation (2-4). You can get results. here Is the dielectric constant, A is the electrode area, and d is the capacitive gap.
  • the sensing electrode is configured such that changes in the gap size due to movement of the verification mass (Fig. 2 (b)) have opposite polarities, and the capacitance differential value ( ) Can be expressed by equation (2-5).
  • Equation (2-7) If the displacement difference (x) is much smaller than the gap size (d), Eq. (2-5) can be simplified to Eq. (2-6), and the capacitance differential value for acceleration ( The scale factor represented by) may be expressed as Equation (2-7).
  • the capacitive accelerometer is a capacitance differential value ( ) To detect the acceleration.
  • the frequency response range uniquely refers to the frequency section of the area where the measurement is accurate.
  • the frequency response range refers to a trusted area where the sensor can properly output a signal, and the trusted area can be expressed as a linear section.
  • the width of the detectable frequency is narrowed, and when the frequency response range is increased, the signal sensitivity is reduced.
  • a method that can simultaneously satisfy high frequency response and sensor sensitivity in a limited chip size is to narrow the gap between MEMS electrodes.
  • nanogap accelerometer of Ayazi Lab of Georig tech, USA which discloses the process technique of FIG. 4, is representative.
  • both planar and out-of-plane accelerometers use SOI (Silicon) using the high aspect-ratio combined poly- and single-crystal silicon micromachining technology (HARPSS).
  • HARPSS high aspect-ratio combined poly- and single-crystal silicon micromachining technology
  • -on-insulartor can be made on a wafer (Fig. 4 (a)).
  • a Deep Reactive-Ion Etching (DRIE) trench that forms the appearance of a mechanical structure on a silicon wafer is etched.
  • a side capacitive gap can be defined by thermally growing the sacrificial oxide layer (FIG. 4 (b)).
  • a poly-silicon may be filled into the trench using a low pressure chemical vapor deposition (LPCVD) method (FIG. 4 (c)).
  • LPCVD low pressure chemical vapor deposition
  • a polysilicon layer is deposited and can be patterned to define the top electrode for out-of-plane orientation (FIG. 4 (e)).
  • the sacrificial oxide layer may be removed from hydrofluoric acid (HF) to form a MEMS accelerator structure.
  • HF hydrofluoric acid
  • the MEMS accelerometer is bonded to the capping wafer to perform sealed wafer level vacuum packaging (1-10 Torr).
  • the capping wafer may be separately processed by filling with an insulator to define a groove and to implement a through-silicon-via (TSV). Because the waver has a low resistance, the silicon through electrode (TSV) provides a low resistance path between the envelope pad and the internal MEMS device.
  • TSV through-silicon-via
  • the depression is etched prior to the capping process, and the gold pattern is defined to eutecticly bond with the MEMS wafer. After sealing, a gold metal trace and pad can be deposited on top of the capping wafer. (Fig. 4 (g), Fig. 4 (h))
  • the process method of Ayazi Lab's nanogap acceleration sensor requires complex process such as deposition of oxide film and polysilicon, selective removal of oxide film, and currently, the manufacturing process of MEMS structures in mass production foundries is limited to a minimum line width of about 2um.
  • the present invention aims to solve the above-mentioned problems and other problems through the specification of the present invention.
  • An object of the present invention is to realize the performance of high sensitivity and high frequency response through a MEMS accelerometer by reducing the gap between electrodes.
  • the present invention aims to reduce the spacing between electrodes of a MEMS accelerometer with a minimum of a processable line width in a MEMS accelerometer structure processing method in which the minimum processable line width is limited in silicon foundries, without design process improvement.
  • the verification mass including a plurality of first electrodes floating and moving in the horizontal direction and extending a predetermined length in the vertical direction to the movement direction, both ends of the verification mass A first elastic body elastically supported, a fixed electrode including a plurality of second electrodes extending a predetermined length toward the verification mass, and the first electrode provided between the verification mass and the fixed electrode and located on both sides And a third electrode, each of which is disposed overlapping the second electrode, wherein the third electrode is attached to the second electrode to reduce a gap between the first electrode and the third electrode.
  • a MEMS accelerometer characterized in that it floats and moves in a horizontal direction.
  • the mobile electrode is moved by a constant power between the third electrode and the second electrode MEMS accelerometer, characterized in that fixed to the fixed electrode to provide.
  • the first electrode and the third electrode in one direction and the second electrode and the third electrode in the other direction are respectively disposed overlap, the first MEMS accelerometer, characterized in that the line width direction between the electrode and the one-way third electrode is parallel to the line width direction between the third electrode and the second electrode in the other direction.
  • the gap between the third electrode and the second electrode provides a MEMS accelerometer, characterized in that less than the gap between the third electrode and the first electrode do.
  • the MEMS accelerometer provides a MEMS accelerometer further comprising a second elastic body elastically supporting both ends of the mobile electrode.
  • the second elastic body provides a MEMS accelerometer characterized in that the third electrode provides an asymmetrical external force to maintain the attachment state to the second electrode. to provide.
  • the verification mass forms one body, and is provided to surround each of the fixed electrodes provided symmetrically on one plane, and the movement MEMS accelerometer, characterized in that two electrodes are provided symmetrically between the two fixed electrodes and the verification mass.
  • a plurality of verification masses floating and moving horizontally in the process in a method of manufacturing a MEMS accelerometer with a minimum line width processable in silicon foundries limited to d, a plurality of verification masses floating and moving horizontally in the process.
  • the line width between the first electrode and the third electrode in one direction of the movable electrode floating and moving horizontally is formed by d + a (a ⁇ d), the second electrode of the fixed fixed electrode and the third of the other electrode of the mobile electrode Forming a line width between electrodes to a minimum d, moving the moving electrode during the design process to attach the second electrode and the third electrode in the other direction, and a minimum line width between the first electrode and the one-way third electrode a
  • It provides a method of manufacturing a MEMS accelerometer comprising the step of forming.
  • the design process comprises moving the moving electrode by a constant power between the third electrode and the second electrode in the other direction.
  • a method of manufacturing a MEMS accelerometer is provided.
  • the process step of the first electrode and the one-way third electrode and the second electrode and the other electrode in the third direction are overlapped, respectively Provided is a method of manufacturing a MEMS accelerometer, wherein the line width direction between the second electrode and the third electrode in the other direction is parallel to the line width direction between the third electrode and the second electrode in the other direction.
  • the design process elastically supports both ends of the verification mass by a first elastic body, and both ends of the movable electrode are burnt by a second elastic body. It provides a method of manufacturing a MEMS accelerometer characterized in that it is designed to be sexually supported.
  • the design process provides an asymmetrical external force such that the second elastic body maintains an attachment state between the third electrode and the second electrode in the other direction. It provides a method of manufacturing a MEMS accelerometer, characterized in that.
  • the process process is such that the verification mass forms one body, and is formed to surround each of the fixed electrodes symmetrically provided on one plane. And, it provides a method of manufacturing a MEMS accelerometer, characterized in that the moving electrode is formed to be provided symmetrically between the two fixed electrodes and the verification mass.
  • the present invention can fabricate MEMS accelerometers with inter-electrode spacing smaller than the minimum line width processable in silicon foundries.
  • the present invention can realize high-sensitivity and high-frequency response performance through a MEMS accelerometer by reducing the gap between electrodes.
  • the present invention can reduce the gap between the electrodes of the MEMS accelerometer using only the design technology through the existing process technology, without the effort and resources required to reduce the minimum processable line width in the silicon foundry process.
  • 1 is a view for explaining the basic operation principle of the MEMS accelerometer.
  • FIG. 2 is a conceptual diagram schematically illustrating a capacitive accelerometer.
  • FIG. 3 is a diagram for explaining a correlation between a signal sensitivity and a frequency response range in a capacitive accelerometer.
  • FIG. 4 is a view showing an embodiment of a MEMS accelerometer process method.
  • FIG. 5 is a view for explaining a conventional capacitive accelerometer.
  • FIG. 6 is a view for explaining a capacitive accelerometer according to the present invention.
  • FIG. 7 is an enlarged view of FIG. 6B, and is a view for explaining a method of reducing the inter-electrode spacing in the capacitive accelerometer according to the present invention.
  • FIG. 8 is a view for explaining an embodiment of the capacitive accelerometer according to the present invention.
  • FIG. 5 is a view for explaining a conventional capacitive accelerometer.
  • the basic structure of the existing capacitive MEMS accelerometer is outlined as follows.
  • the first elastic body 514 and the first elastic body elastically supporting both ends of the verification mass 511 which is a movable structure that can be floated and moved.
  • the fixed electrode 521 may include a second electrode 522 extending in the direction of the verification mass 511 and overlapping the first electrode.
  • the capacitance between the first electrode 512 and the second electrode 522 changes, and the change in the capacitance induces a change in the sense voltage applied to the classic electrode 521, It is amplified and measured through an amplifier (not shown) connected to the first electrode 512 to measure the applied acceleration.
  • the MEMS accelerometer may be provided by intersecting the first electrode 512 and the second electrode 522 in a comb type in order to further enlarge the amount of change in the capacitance output with respect to acceleration.
  • the signal sensitivity and frequency response range of the MEMS accelerometer may be determined at intervals of the portion A in FIG. 5.
  • FIG. 6 is a view for explaining a capacitive accelerometer according to the present invention.
  • the MEMS accelerometer according to the present invention is suspended, moves in a horizontal direction, and includes a verification mass 511 including a plurality of first electrodes 612 extending in a vertical direction in the movement direction, and both ends of the verification mass 611.
  • the first elastic body 614 to elastically support, the fixed electrode 621 including a plurality of second electrodes 622 extending a predetermined length toward the verification mass 611, and the verification mass 611
  • the movable electrode 631 is provided between the fixed electrodes 621 and includes a third electrode 632 overlapping the first electrode 612 and the second electrode 622 positioned on both sides. Including, the mobile electrode 631 is suspended so that the third electrode 632 is attached to the second electrode 622 to reduce the gap between the first electrode 611 and the third electrode 632. It can move in the horizontal direction.
  • the moving electrode 621 may be suspended in a direction parallel to the direction in which the verification mass 611 moves, and may be elastically supported at both ends through the second elastic body 631. Specifically, the verification mass 611 and the moving electrode 621 may be elastically supported by the first elastic body 614 and the second elastic body connected to the first anchor 613 and the second anchor 633, respectively. .
  • the moving electrode 621 may include a third electrode 632a in one direction and a third electrode 632b in the other direction extending in a predetermined length in both directions vertically in the moving direction, and the third electrode ( 632a) may be overlapped with the first electrode 612, and the third electrode 632a in the other direction may be overlapped with the second electrode 612.
  • first electrode 612 and the third electrode 632a in one direction, and the second electrode 621 and the third electrode 632b in the other direction are overlapped, respectively, and the first electrode 612 and the The line width direction between the third electrode 632a in one direction may be parallel to the line width direction between the third electrode 632b and the second electrode 622 in the other direction.
  • an interval between the third electrode 632b in the other direction and the second electrode 622 may be smaller than an interval between the third electrode 632a and the first electrode 612 in one direction.
  • the feature of the present invention is to reduce the gap between the first electrode 612 and the third electrode 632a in one direction. In this regard, it will be described in detail in FIG. 7.
  • FIG. 7 is an enlarged view of FIG. 6B, and is a view for explaining a method of reducing the inter-electrode spacing in the capacitive accelerometer according to the present invention.
  • FIG. 7 (a) is a method of manufacturing a MEMS accelerometer in which the minimum line width processable in silicon foundries is limited to d, a plurality of first electrodes 612 and suspensions of the verification mass 611 suspended and horizontally moved in the process.
  • the line width between the one-way third electrode 632a of the movable electrode 631 moving horizontally is formed as d + a, and the second electrode 622 of the fixed fixed electrode 621 and the other of the movable electrode 631
  • the moving electrode 631 is moved in the C direction to attach the second electrode 622 and the third electrode 632b in the other direction, and the first electrode
  • the line width between 612 and the third electrode 632a in one direction may be formed to a minimum of a (d + a-d 'in FIG. 7 (b)).
  • the present invention uses a conventional process method in which the minimum line width that can be processed in silicon foundries is limited to d, and the distance between the first electrode 612 and the third electrode 632a in one direction, which is caused by a change in capacitance, is greater than d It can be implemented with a small a.
  • the third electrode 632b and the second electrode 622 in the other direction are attached by a constant power, and the movable electrode 631 may be fixed to the fixed electrode 621.
  • the change in the capacitance is the first direction connected to the conductor.
  • An amplifier (not shown) connected to the first electrode 512 is induced by inducing a change in the sensing voltage applied to the fixed electrode 521 through the third electrode 632a and the third electrode 632b in the other direction. It can be amplified and measured.
  • the third electrode 632b and the second electrode 622 in the other direction may be attached by using pull-in, adhesion, and stiction phenomena in addition to constant power, and in some cases, a second elastic body that provides an asymmetrical external force ( 634).
  • the present invention can form the gap between the electrodes of the MEMS accelerometer to less than 0.5 nm less than 2 ⁇ m using the process method of the nanogap acceleration sensor of Ayazi Lab illustrated in FIG. 4.
  • FIG. 8 is a view for explaining an embodiment of the capacitive accelerometer according to the present invention.
  • the fixed electrode 621 and the movable electrode 631 may be symmetrically provided on a plane.
  • the verification mass 611 forms one body, and is provided to surround each of the fixed electrodes 621 provided symmetrically on one plane, and the movable electrode 631 is fixed to the two Two electrodes may be symmetrically provided between the electrode 621 and the verification mass 611.
  • the verification mass 611 is connected to the first anchor 613 through the first elastic body 614 and is movable in one direction by inertia, and the moving electrode 611 is the second elastic body to the second anchor 633 It is fixed to (614), it is possible to support the third electrode (632b) in the other direction to move to be attached to the second electrode (622).

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne, afin de former une distance entre des électrodes MEMS à d ou moins, l'utilisation d'un procédé de fabrication d'une structure MEMS, dont la largeur de ligne minimale est limitée à d, au niveau d'une fonderie de silicium, la présente invention peut fournir un accéléromètre MEMS comprenant : une masse d'épreuve flottant et se déplaçant dans la direction horizontale, et comprenant une pluralité de premières électrodes s'étendant d'une longueur prédéterminée dans une direction perpendiculaire à la direction de déplacement ; un premier corps élastique pour supporter élastiquement des extrémités opposées de la masse d'épreuve ; une électrode fixe comprenant une pluralité de secondes électrodes s'étendant d'une longueur prédéterminée vers la masse d'épreuve ; et une électrode mobile disposée entre la masse d'épreuve et l'électrode fixe et comprenant des troisièmes électrodes disposées pour chevaucher les premières électrodes et les secondes électrodes positionnées dans des côtés opposés de celle-ci, respectivement, l'électrode mobile flottant et se déplaçant dans la direction horizontale de telle sorte que les troisièmes électrodes sont fixées aux deuxièmes électrodes pour réduire une distance entre les premières électrodes et les troisièmes électrodes.
PCT/KR2018/013976 2018-10-18 2018-11-15 Accéléromètre mems et son procédé de fabrication WO2020080592A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180124667A KR20200043816A (ko) 2018-10-18 2018-10-18 Mems 가속도계 및 이의 제조 방법
KR10-2018-0124667 2018-10-18

Publications (1)

Publication Number Publication Date
WO2020080592A1 true WO2020080592A1 (fr) 2020-04-23

Family

ID=70283433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/013976 WO2020080592A1 (fr) 2018-10-18 2018-11-15 Accéléromètre mems et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR20200043816A (fr)
WO (1) WO2020080592A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060283246A1 (en) * 2005-06-15 2006-12-21 Weinberg Marc S Tuning fork gyroscopes, accelerometers, and other sensors with improved scale factor
CN101481084A (zh) * 2009-02-13 2009-07-15 杭州电子科技大学 一种可变间距电容的微惯性传感器及其制作方法
JP2011196966A (ja) * 2010-03-24 2011-10-06 Hitachi Ltd 慣性センサ
JP2011237403A (ja) * 2010-04-15 2011-11-24 Dainippon Printing Co Ltd 力学量センサ及び力学量センサの製造方法
US20160069928A1 (en) * 2013-05-02 2016-03-10 Northrop Grumman Litef Gmbh Acceleration Sensor and Method for Producing an Acceleration Sensor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060283246A1 (en) * 2005-06-15 2006-12-21 Weinberg Marc S Tuning fork gyroscopes, accelerometers, and other sensors with improved scale factor
CN101481084A (zh) * 2009-02-13 2009-07-15 杭州电子科技大学 一种可变间距电容的微惯性传感器及其制作方法
JP2011196966A (ja) * 2010-03-24 2011-10-06 Hitachi Ltd 慣性センサ
JP2011237403A (ja) * 2010-04-15 2011-11-24 Dainippon Printing Co Ltd 力学量センサ及び力学量センサの製造方法
US20160069928A1 (en) * 2013-05-02 2016-03-10 Northrop Grumman Litef Gmbh Acceleration Sensor and Method for Producing an Acceleration Sensor

Also Published As

Publication number Publication date
KR20200043816A (ko) 2020-04-28

Similar Documents

Publication Publication Date Title
US20220205784A1 (en) Micromechanical detection structure of a mems multi-axis gyroscope, with reduced drifts of corresponding electrical parameters
US8863575B2 (en) Microelectromechanical three-axis capacitive accelerometer
US7322242B2 (en) Micro-electromechanical structure with improved insensitivity to thermomechanical stresses induced by the package
EP3156804B1 (fr) Dispositif à capteur microélectromécanique avec une sensibilité au stress réduite
JP4705229B2 (ja) マイクロマシニング型の回転角加速度センサ
CN110058051B (zh) 具有减少漂移功能的z轴微机电检测结构
US8468887B2 (en) Resonant accelerometer with low sensitivity to package stress
JPH06302832A (ja) 加速度センサ
US20140283605A1 (en) High-sensitivity, z-axis micro-electro-mechanical detection structure, in particular for an mems accelerometer
US7178398B2 (en) Coplanar proofmasses employable to sense acceleration along three axes
WO2016182303A1 (fr) Gyroscope mems présentant un mode détection à 2 degrés de liberté
US20220041429A1 (en) Microelectromechanical sensor device with improved stability to stress
US7104128B2 (en) Multiaxial micromachined differential accelerometer
WO2013047933A1 (fr) Accéléromètre résonnant à mems
KR100508198B1 (ko) 가속도 센서
CN110596423B (zh) 一种抗高过载梳齿电容式单轴加速度计
WO2018004113A1 (fr) Capteur d'accélération triaxial basé sur mems
US20240044932A1 (en) Microelectromechanical sensor device with active offset compensation
WO2020080592A1 (fr) Accéléromètre mems et son procédé de fabrication
CN210572371U (zh) 三轴电容式微加速度计
Rödjegård et al. A monolithic three-axis SOI-accelerometer with uniform sensitivity
CN113970655B (zh) 一种mems加速度计及其形成方法
CN114594281A (zh) 一种mems加速度计及其形成方法
JPH10104266A (ja) 力学量センサおよびそれを用いた集積回路
WO2017159979A1 (fr) Accéléromètre piézorésistif et procédé d'encapsulation d'un accéléromètre piézorésistif

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18937330

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18937330

Country of ref document: EP

Kind code of ref document: A1