WO2020078180A1

WO2020078180A1 - Mask, display substrate and manufacturing method therefor, and display device

Info

Publication number: WO2020078180A1
Application number: PCT/CN2019/107725
Authority: WO
Inventors: 马涛; 余巨峰; 杨成绍
Original assignee: 京东方科技集团股份有限公司; 合肥鑫晟光电科技有限公司
Priority date: 2018-10-18
Filing date: 2019-09-25
Publication date: 2020-04-23
Also published as: CN109188854A; CN109188854B

Abstract

A mask, a display substrate and a manufacturing method therefor, and a display device, relating to the technical field of display. The mask comprises a transparent region (52), a first opaque region, and a first partially transparent region (51), and further comprises a transition region (53) between the first partially transparent region (51) and the transparent region (52). At the same light intensity, radiant energy flux passing through the transition area (53) per unit area is less than radiant energy flux passing through the first partially transparent area (51) per unit area.

Description

Mask plate, display substrate, manufacturing method thereof, and display device

Cross-reference of related applications

This application claims the priority of Chinese Patent Application No. 201811214889.8 filed in China on October 18, 2018, the entire contents of which are hereby incorporated by reference.

Technical field

The present disclosure relates to the field of display technology, and in particular, to a mask, a display substrate, a manufacturing method thereof, and a display device.

Background technique

In the existing display substrate, in order to improve the display quality, a metal pattern is further provided on the common electrode. The metal pattern directly contacts the common electrode, which can reduce the resistance of the common electrode, thereby reducing the greening of the screen.

Summary of the invention

The technical problem to be solved by the present disclosure is to provide a mask plate, a display substrate, a manufacturing method thereof, and a display device, which can avoid the phenomenon of residual metal layers and improve the transmittance of the display substrate.

To solve the above technical problems, the embodiments of the present disclosure provide technical solutions as follows:

In one aspect, a mask plate is provided. The mask plate includes a light-transmitting area, a first opaque area, and a first partial light-transmitting area. The mask plate further includes In the transition area between the light-transmitting areas, under the same light intensity, the radiant energy flux passing through the transition area per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting area per unit area.

Further, the transition zone includes:

The second partial light-transmitting area and the second non-light-transmitting area are sequentially arranged in the direction from the light-transmitting area to the first partial light-transmitting area.

Further, the width of the second opaque region in the direction from the transparent region to the first partially transparent region is 1 to 1.2 μm, and the second partially transparent region is from the The width from the light-transmitting region to the first partial light-transmitting region is 1.5-2 μm.

Further, the light transmittance of the second partial light-transmitting area is equal to the light transmittance of the first partial light-transmitting area.

Further, the light transmittance of the first partial light-transmitting area is 30-35%, and the light transmittance of the transition area is 20-25%. The transition area is from the light-transmitting area to the first portion The width in the direction of the light-transmitting region is 3.5 to 6.5 μm.

Further, the transition area is a phase shift mask (Phase Shift Mask, PSM) structure.

Further, the light transmittance of the phase-shifting mask structure is equal to the light transmittance of the first partial light-transmitting area, The width in the direction of 4.5 to 5.5 μm.

Further, the transition area is a single slit diffraction mask (Single Slit Mask, SSM) structure.

Further, the single-slit diffraction mask structure includes a light-shielding stripe and a slit between the light-shielding stripes, and the single-slit diffraction mask structure extends from the light-transmitting region to the first partial light-transmitting region The width in the direction is 4.5 to 5.5 μm, and the width of the slit in the direction from the light-transmitting region to the first partial light-transmitting region is 2 to 2.3 μm.

An embodiment of the present disclosure also provides a method for manufacturing a display substrate, including:

Forming a first conductive layer and a second conductive layer in sequence on the base substrate;

A layer of photoresist is formed on the second conductive layer, and the photoresist is exposed using a mask as described above, and after development, a photoresist completely removed area, a photoresist partially reserved area, and light are formed The resist completely retains the area;

Etching away the second conductive layer in the area where the photoresist is completely removed;

Ashing off the photoresist in the reserved area of the photoresist;

Etching away the first conductive layer of the photoresist completely removed area to form a first conductive pattern;

Etching away the second conductive layer of the photoresist portion remaining area to form a second conductive pattern;

Strip the photoresist in the area where the photoresist completely remains.

Further, the first conductive pattern is a common electrode, and the second conductive pattern is a metal pattern.

Further, the base substrate is an organic film.

Further, the metal pattern is made of copper.

Embodiments of the present disclosure also provide a display substrate, which is manufactured using the manufacturing method described above.

An embodiment of the present disclosure also provides a display device, including the display substrate as described above.

The embodiments of the present disclosure have the following beneficial effects:

In the above solution, a transition area is provided between the first part of the mask plate and the transparent area. Under the same light intensity, the radiant energy flux passing through the transition area per unit area is smaller than that passing through the unit area The radiant energy flux of a part of the light-transmitting area, so that when the mask is used to expose the photoresist, the thickness of the photoresist in the part of the photoresist retention area close to the photoresist completely removed area can be ensured The uniformity of the photoresist thickness in the photoresist retention area ensures that the subsequent ashing process can completely remove the photoresist in the photoresist retention area, thereby avoiding the phenomenon of residual metal layers and improving the transmittance of the display substrate. Improve the yield and product competitiveness of the display substrate.

BRIEF DESCRIPTION

1 is a schematic diagram of using a mask to expose a photoresist according to the prior art;

2 is a schematic diagram of the electric field being weakened in the ashing process according to the prior art;

3 is a schematic diagram of using a mask to expose a photoresist according to an embodiment of the present disclosure;

4 is a schematic diagram of using a mask to expose a photoresist according to another embodiment of the present disclosure;

5 is a schematic diagram of using a mask to expose a photoresist according to another embodiment of the present disclosure;

6 is a schematic diagram of exposing a photoresist using a mask according to yet another embodiment of the present disclosure.

7 is a flowchart of a method of manufacturing a display substrate according to an embodiment of the present disclosure.

detailed description

To make the technical problems, technical solutions, and advantages to be solved by the embodiments of the present disclosure clearer, the following will describe in detail with reference to the accompanying drawings and specific embodiments.

In the existing display substrate, in order to improve the display quality, a metal pattern is also provided on the common electrode. The metal pattern is in direct contact with the common electrode, which is equivalent to parallel connection with the common electrode, which can reduce the resistance of the common electrode, thereby reducing the greening of the screen. Happening.

When fabricating the common electrode and the metal pattern, as shown in FIG. 1, first, a transparent conductive layer 2 and a metal layer 3 are stacked on the substrate 1, and a photoresist 4 is coated on the metal layer 3. The illustrated mask 5 exposes the photoresist 4, the mask 5 includes a first partially transparent region 51, a first opaque region (not shown) and a transparent region 52, wherein the first partially transparent region 51 and the first opaque region correspond to the region where the common electrode is located, the first opaque region corresponds to the region where the metal pattern is located, and the transparent region 52 corresponds to the region where the transparent conductive layer 2 is removed. After development, the photoresist completely removed area, the photoresist partially reserved area and the photoresist completely reserved area are formed, the metal layer 3 of the photoresist completely removed area is etched away, and then the light of the photoresist partially removed area is ashed Using the metal layer 3 as a mask, the photoresist is completely etched to remove the transparent conductive layer 2 in the area to form the pattern of the common electrode; then the metal layer 3 in the area where the photoresist is partially left is etched to form the metal pattern ; Finally, strip the photoresist in the area where the photoresist completely remains.

As shown in FIG. 1, after the photoresist 4 is exposed using a mask plate, since the photoresist is completely removed and there is a step difference in the photoresist part remaining area, the flow of the photoresist is affected, making the photoresist part The thickness of the photoresist 4 in the remaining area near the photoresist completely removed area is thin. As shown in FIG. 2, when dry etching the photoresist 4 ashing away the reserved area of the photoresist part, the electric field is used to control the plasma and free radicals to bombard the photoresist 4, because the photoresist part of the reserved area is close to The thickness of the photoresist 4 in the part where the photoresist is completely removed is thin, so this part of the photoresist 4 is first ashed clean, which will expose the metal layer 3, and the exposed metal layer 3 will offset part of the loading The electric field on the plasma and free radicals weakens the electric field and reduces the ashing rate of the photoresist 4, resulting in residual photoresist in the partially reserved area of the photoresist after the ashing process, resulting in incomplete etching during subsequent etching The metal layer 3 in the remaining area of the photoresist is removed, and the metal layer 3 remains, which further affects the transmittance of the display substrate.

In view of the above problems in the prior art, the embodiments of the present disclosure provide a mask plate, a display substrate, a manufacturing method thereof, and a display device, which can avoid the phenomenon of remaining metal layers and improve the transmittance of the display substrate.

An embodiment of the present disclosure provides a mask plate, the mask plate includes a light-transmitting area and a first partial light-transmitting area, and the mask plate further includes a position between the first partial light-transmitting area and the light-transmitting area In the transition zone between the two, under the same light intensity, the radiant energy flux passing through the transition zone per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting zone per unit area. Among them, the light energy passing through a certain area in a unit time is called the radiant energy flux through this area.

In this embodiment, a transition area is provided between the first part of the mask plate and the transparent area. Under the same light intensity, the radiant energy flux through the transition area per unit area is smaller than that through the unit area The radiation energy flux of the first part of the light-transmitting area, so that when the mask is used to expose the photoresist, the thickness of the photoresist in the part of the photoresist retention area that is close to the photoresist completely removed area can be guaranteed Improve the uniformity of the thickness of the photoresist in the reserved area of the photoresist, ensure that the subsequent ashing process can completely remove the photoresist in the reserved area of the photoresist, thereby avoiding the phenomenon of residual metal layer and improving the transmittance of the display substrate To improve the yield and product competitiveness of the display substrate.

In a specific embodiment, the light transmittance of the first partial light-transmitting area is 30 to 35%, and the light transmittance of the transition area is 20 to 25%. The width of the first partial light-transmitting region in the direction is 3.5-6.5 μm.

As shown in FIG. 3, the mask of this embodiment includes a first partial light-transmitting area 51, a first opaque area (not shown) and a light-transmitting area 52. In the first partial light-transmitting area 51 and the light-transmitting area 52 A transition area 53 is provided between them, and the light transmittance of the transition area 53 is less than the light transmittance of the first partial light-transmitting area 51. The transition area 53 may specifically be composed of a transparent substrate of the mask plate and a semi-transmissive pattern on the transparent substrate.

As shown in FIG. 3, since the light transmittance of the transition area 53 is smaller than the light transmittance of the first partial light-transmitting area 51, when the mask is used to expose the photoresist, the photoresist The photoresist in the part of the remaining area near the photoresist completely removed area receives less light. After development, the thickness of the photoresist in this part will be greater than the thickness of the photoresist in the part of the photoresist remaining area , Can reduce the influence of the flow of the photoresist on the thickness of the photoresist, improve the uniformity of the thickness of the photoresist in the reserved area of the photoresist, and ensure that the subsequent ashing process can completely remove the light in the photoresist's reserved area Etched.

Specifically, the difference between the light transmittance of the first partial light-transmitting region and the light transmittance of the transition region may be 5% -10%. In a specific embodiment, the light transmittance of the first partial light-transmitting region may be 30%, and the light transmittance of the transition region may be 25%. Of course, the light transmittance of the first part of the light-transmitting area is not limited to 30%, but may be other values. When the light transmittance of the first part of the light-transmitting area is not 30%, the light transmittance of the transition area also varies Change.

Specifically, when the light transmittance of the first partial light-transmitting area is 30 to 35% and the light transmittance of the transition area is 20 to 25%, the transition area is transparent from the light-transmitting area 52 to the first portion The width d1 of the light region 51 in the direction may be 3.5 to 6.5 μm. When the above parameters are adopted, the thickness of the photoresist in the photoresist part retention area can be kept uniform.

In another specific embodiment, as shown in FIG. 4, the mask of this embodiment includes a first partial light-transmitting area 51, a first opaque area (not shown), and a light-transmitting area 52, and is transparent in the first part A phase shift mask structure 54 is provided between the light area 51 and the light-transmitting area 52. In the case of the same light intensity and equal light transmittance, the radiant energy flux passing through the phase shift mask structure 54 per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting region 51 per unit area.

The phase shift mask structure 54 may be formed by selectively depositing a layer of transparent phase shifter on the mask plate and using light waves transmitted through two adjacent windows with and without a phase shifter With the phase difference, it produces destructive interference and reduces the light intensity between the windows.

As shown in FIG. 4, under the same light intensity, the radiant energy flux passing through the phase shift mask structure 54 per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting region 51 per unit area. Therefore, when the photoresist is exposed using the mask of this embodiment, the photoresist in the portion of the photoresist portion remaining area near the photoresist completely removed area receives less light. After development, the thickness of the photoresist in this part will be greater than the thickness of the photoresist in the remaining area of the photoresist part, thereby reducing the influence of the flow of the photoresist on the thickness of the photoresist part and improving the photoresist part The thickness uniformity of the photoresist in the reserved area and ensure that the subsequent ashing process can completely remove the photoresist in the partially reserved area of the photoresist. Moreover, by providing the phase shift mask structure 54 between the first partial light-transmitting region 51 and the light-transmitting region 52, the edge of the photoresist in the photoresist portion retention area can be made steeper, thereby increasing the refinement of the pattern.

In a specific embodiment, the light transmittance of the first partial light-transmitting region may be 30%. Of course, the light transmittance of the first part of the light-transmitting area is not limited to 30%, and may be other values. The transmittance of the phase shift mask structure 54 is equal to the transmittance of the first partial light-transmitting region.

Specifically, the width d2 of the phase shift mask structure 54 in the direction from the light-transmitting region 52 to the first partial light-transmitting region 51 may be 4.5-5.5 μm. When the above parameters are adopted, the thickness of the photoresist in the photoresist part retention area can be kept uniform.

In another specific embodiment, as shown in FIG. 5, the mask of this embodiment includes a first partial light-transmitting area 51, a first opaque area (not shown) and a light-transmitting area 52, and is transparent in the first part The light area 51 and the light transmission area 52 are provided with a single slit diffraction mask structure 55. Under the same light intensity, the radiant energy flux passing through the single-slit diffraction mask structure 55 per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting region 51 per unit area. The single-slit diffraction mask structure 55 utilizes the principle of light diffraction to make the mask gap of the groove position narrow enough so that light can only be transmitted through diffraction, thereby reducing the exposure amount of the region on the photoresist.

As shown in FIG. 5, due to the same light intensity, the radiant energy flux passing through the single-slit diffraction mask structure 55 per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting region 51 per unit area. Therefore, when the photoresist is exposed using the mask of this embodiment, the photoresist in the portion of the photoresist portion remaining area near the photoresist completely removed area receives less light. After development, the thickness of the photoresist in this part will be greater than the thickness of the photoresist in the remaining area of the photoresist part, thereby reducing the influence of the flow of the photoresist on the thickness of the photoresist part and improving the photoresist part The thickness uniformity of the photoresist in the reserved area and ensure that the subsequent ashing process can completely remove the photoresist in the partially reserved area of the photoresist. Moreover, by providing the single-slit diffraction mask structure 55 between the first partial light-transmitting region 51 and the light-transmitting region 52, the edge of the photoresist in the photoresist portion retention region can be made steeper, thereby increasing the fineness of the pattern.

In a specific embodiment, the light transmittance of the first partial light-transmitting region may be 30%. Of course, the light transmittance of the first part of the light-transmitting area is not limited to 30%, and may be other values. The width of the single-slit diffraction mask structure 55 is related to the light transmittance of the first partial light-transmitting region.

Specifically, the single-slit diffraction mask structure includes a light-shielding stripe and a slit between the light-shielding stripe. When the light transmittance of the first partial light-transmitting area is 30%, the width of the single-slit diffraction mask structure 55 in the direction from the light-transmitting area 52 to the first partial light-transmitting area 51 may be 4.5 to 5.5 μm And, the total width of the slit in the direction from the light-transmitting region 52 to the first partial light-transmitting region 51 may be 2 to 2.3 μm. When the above parameters are adopted, the thickness of the photoresist in the photoresist part retention area can be kept uniform.

In another specific embodiment, as shown in FIG. 6, the mask of this embodiment includes a first partial light-transmitting area 51, a first opaque area (not shown) and a light-transmitting area 52, and is transparent in the first part Between the light region 51 and the light-transmitting region 52, in the direction from the light-transmitting region 52 to the first partial light-transmitting region 51, a second partial light-transmitting region 57 and a second opaque region 56 are provided in this order. The second partial light-transmitting region 57 and the second opaque region 56 are combined together to form a transition zone, so that under the same light intensity, the radiant energy flux passing through the transition zone per unit area is smaller than that passing through the first part per unit area The radiant energy flux of the light area 51. The second opaque region 56 is different from the first opaque region (not shown). The first opaque region (not shown) is used to form a film pattern, and the second opaque region 56 is used to weaken the transition region. Radiant energy flux.

As shown in FIG. 6, due to the same light intensity, the radiant energy flux passing through the second partial light-transmitting area 57 and the second opaque area 56 per unit area is smaller than that passing through the first partial light-transmitting area 51 per unit area Radiant energy flux. Therefore, when the photoresist is exposed using the mask of this embodiment, the photoresist in the portion of the photoresist portion remaining area near the photoresist completely removed area receives less light. After development, the thickness of the photoresist in this part will be greater than the thickness of the photoresist in the remaining area of the photoresist part, thereby reducing the influence of the flow of the photoresist on the thickness of the photoresist part and improving the photoresist part The thickness uniformity of the photoresist in the reserved area and ensure that the subsequent ashing process can completely remove the photoresist in the partially reserved area of the photoresist.

In a specific embodiment, the light transmittance of the first partial light-transmitting area may be 30%. Of course, the light transmittance of the first partial light-transmitting area is not limited to 30%, and may be other values. The width of the two-part light-transmitting region 57 and the second opaque region 56 is related to the light transmittance of the first-part light-transmitting region 51.

Further, the light transmittance of the second partial light-transmitting area 57 may be equal to the light transmittance of the first partial light-transmitting area 51, and of course, the light transmittance of the second partial light-transmitting area 57 may also be The light transmittance of the first partial light-transmitting area 51 is not equal.

Specifically, when the light transmittances of the first partial light-transmitting region 51 and the second partial light-transmitting region 57 are both 30%, the second opaque region 56 transmits light from the light-transmitting region 52 to the first part The width d3 in the direction of the area 51 may be 1˜1.2 μm, and the width d4 of the second partial light transmitting area 57 in the direction from the light transmitting area 52 to the first partial light transmitting area 51 may be 1.5˜2 μm. When the above parameters are adopted, the thickness of the photoresist in the photoresist part retention area can be kept uniform.

As shown in FIG. 7, an embodiment of the present disclosure also provides a method for manufacturing a display substrate, including:

Ashing off the photoresist in the reserved area of the photoresist;

Strip the photoresist in the area where the photoresist completely remains.

In this embodiment, a transition area is provided between the first part of the light-transmitting area of the mask plate and the light-transmitting area. Under the same light intensity, the radiant energy flux passing through the transition area per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting area per unit area, so that when the mask is used to expose the photoresist , Which can ensure the thickness of the photoresist in the part of the photoresist retention area that is close to the photoresist removal area, improve the uniformity of the photoresist thickness in the photoresist retention area, and ensure that the subsequent ashing process can be completely Remove the photoresist in the remaining area of the photoresist. Furthermore, this avoids the phenomenon of the first conductive layer remaining, improves the transmittance of the display substrate, and improves the yield and product competitiveness of the display substrate.

The first conductive layer and the second conductive layer in this embodiment may be any two conductive layers stacked on the display substrate.

In a specific embodiment, the first conductive pattern may be a common electrode, and the second conductive pattern may be a metal pattern. The metal pattern is in direct contact with the common electrode, which is equivalent to parallel connection with the common electrode, which can reduce the resistance of the common electrode. This will reduce the greening of the picture. When the first conductive pattern is a common electrode and the second conductive pattern is a metal pattern, as shown in FIGS. 3 to 6, the manufacturing method specifically includes:

A transparent conductive layer 2 and a metal layer 3 that are stacked on the substrate 1 are formed, a photoresist 4 is coated on the metal layer 3, and the photoresist 4 is exposed using the mask 5 of this embodiment. The mask 5 includes a first partial light-transmitting area 51, a first opaque area (not shown), and a light-transmitting area 52, wherein the first opaque area corresponds to the area where the metal pattern is located, and the light-transmitting area 52 corresponds to the transparent conductive In the region where the layer 2 is removed, a transition region is provided between the first partial light-transmitting region 51 and the light-transmitting region 52.

After development, a photoresist completely removed area, a photoresist partially retained area and a photoresist completely retained area are formed, and the thickness of the photoresist partially retained area is uniform. The metal layer 3 in the region where the photoresist is completely removed is etched away. After that, the photoresist in the remaining area of the photoresist portion is ashed. Due to the uniform thickness of the remaining area of the photoresist, after the ashing process, the photoresist in the area of the photoresist is completely removed. Using the metal layer 3 as a mask, etch away the transparent conductive layer 2 of the photoresist completely removed area to form the pattern of the common electrode; then etch away the metal layer 3 of the photoresist partially reserved area to form a metal pattern; and finally peel off The photoresist completely retains the area of the photoresist.

The embodiments of the present disclosure also provide a display substrate, which is manufactured using the manufacturing method described above.

The display substrate of this embodiment can avoid the phenomenon of the first conductive layer remaining, improve the transmittance of the display substrate, and improve the yield and product competitiveness of the display substrate.

In a specific embodiment, the first conductive pattern of the display substrate may be a common electrode, and the second conductive pattern of the display substrate may be a metal pattern. The metal pattern is in direct contact with the common electrode, which is equivalent to parallel connection with the common electrode. Reduce the resistance of the common electrode, thereby reducing the greening of the picture.

Embodiments of the present disclosure also provide a display device including the display substrate as described above. The display device may be any product or component with a display function such as a TV, a display, a digital photo frame, a mobile phone, a tablet computer, etc., wherein the display device further includes a flexible circuit board, a printed circuit board, and a backplane.

Unless otherwise defined, the technical or scientific terms used in the present disclosure shall have their usual meanings as understood by those of ordinary skill in the art to which this disclosure belongs. The terms “first”, “second” and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similar words such as "include" or "include" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, but do not exclude other elements or objects. "Connected" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", etc. are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly" on the other element. Or there may be an intermediate element.

The above is the preferred embodiment of the present disclosure. It should be noted that for those of ordinary skill in the art, without departing from the principles described in the present disclosure, several improvements and retouches can be made. It should be regarded as the scope of protection of this disclosure.

Claims

A mask plate, characterized in that the mask plate includes a light-transmitting area, a first opaque area, and a first partial light-transmitting area, and the mask plate further includes In the transition area between the light-transmitting areas, under the same light intensity, the radiant energy flux passing through the transition area per unit area is smaller than the radiant energy flux passing through the first partial light-transmitting area per unit area.
The mask according to claim 1, wherein the transition zone includes:

The second partial light-transmitting area and the second non-light-transmitting area are sequentially arranged in the direction from the light-transmitting area to the first partial light-transmitting area.
The mask plate according to claim 2, wherein the width of the second opaque region in the direction from the light-transmitting region to the first partial light-transmitting region is 1 to 1.2 μm, and The width of the second partial light-transmitting region in the direction from the light-transmitting region to the first partial light-transmitting region is 1.5-2 μm.
The mask according to claim 3, wherein the light transmittance of the second partial light-transmitting area is equal to the light transmittance of the first partial light-transmitting area.
The mask plate according to claim 1, wherein the light transmittance of the first partial light-transmitting area is 30-35%, and the light transmittance of the transition area is 20-25%. The width in the direction from the light-transmitting region to the first partial light-transmitting region is 3.5 to 6.5 μm.
The mask according to claim 1, wherein the transition region is a phase shift mask structure.
The mask plate according to claim 6, wherein the light transmittance of the phase shift mask structure is equal to the light transmittance of the first partial light transmitting area, and the phase shift mask structure is The width in the direction from the light-transmitting region to the first partial light-transmitting region is 4.5-5.5 μm.
The mask plate according to claim 1, wherein the transition zone is a single slit diffraction mask structure.
The mask plate according to claim 8, wherein the single-slit diffraction mask structure includes a light-shielding stripe and a slit between the light-shielding stripes, and the single-slit diffraction mask structure is located from the The width in the direction from the light-transmitting region to the first partial light-transmitting region is 4.5 to 5.5 μm, and the total width of the slit in the direction from the light-transmitting region to the first partial light-transmitting region is 2 to 2.3 μm.
A method for manufacturing a display substrate, characterized in that it includes:

Forming a first conductive layer and a second conductive layer in sequence on the base substrate;

Forming a layer of photoresist on the second conductive layer, exposing the photoresist using the mask according to any one of claims 1 to 9, and forming a photoresist completely removed area after development 1. Partially reserved area of photoresist and completely reserved area of photoresist;

Etching away the second conductive layer in the area where the photoresist is completely removed;

Ashing off the photoresist in the reserved area of the photoresist;

Etching away the first conductive layer of the photoresist completely removed area to form a first conductive pattern;

Etching away the second conductive layer of the photoresist portion remaining area to form a second conductive pattern;

Strip the photoresist in the area where the photoresist completely remains.
The method for manufacturing a display substrate according to claim 10, wherein the first conductive pattern is a common electrode, and the second conductive pattern is a metal pattern.
The method for manufacturing a display substrate according to claim 10, wherein the base substrate is an organic film.
The method for manufacturing a display substrate according to claim 11, wherein the metal pattern is made of copper.
A display substrate manufactured by the manufacturing method according to any one of claims 10 to 13.
A display device comprising the display substrate according to claim 14.