WO2020065765A1

WO2020065765A1 - Heating device

Info

Publication number: WO2020065765A1
Application number: PCT/JP2018/035690
Authority: WO
Inventors: 藤原　正樹
Original assignee: シャープ株式会社
Priority date: 2018-09-26
Filing date: 2018-09-26
Publication date: 2020-04-02

Abstract

A heating device (40) according to the present invention is provided with: a chamber (41) in which a mixture (12a) is fired; an introduction pipe (60A) which is connected to the chamber (41) and introduces N₂ into the chamber (41); and a discharge pipe (70A) which is connected to the chamber (41) and discharges a gas from the chamber (41). The discharge pipe (70A) is provided so as to surround the introduction pipe (60A). Consequently, the present invention provides a heating device which is prevented from increase in the power consumption.

Description

Heating equipment

The present invention relates to a heating device.

では In Patent Document 1, heat is exchanged between the exhaust gas sent from the carbonization furnace and the outside air in the heat exchanger. The heated outside air sent from the heat exchanger passes through a heated outside air supply passage and is supplied to a flameproofing furnace provided separately from the heat exchanger. According to Patent Literature 1, it is described that the flameproofing treatment can be performed stably.

Japanese Unexamined Patent Publication "JP 2009-174077"

による According to Patent Document 1, heated outside air for supplying air to the oxidization furnace is heated in the heat exchanger by exhaust gas heated in a carbonization furnace provided separately from the oxidization furnace. As described above, in Patent Literature 1, since a heat source different from that of the oxidization furnace is required, power consumption increases.

One object of one embodiment of the present invention is to provide a heating device in which an increase in power consumption is prevented.

In order to solve the above problem, a heating device according to one embodiment of the present invention includes a chamber for baking a resin material, an introduction pipe connected to the chamber and introducing an inert gas into the chamber, And an exhaust pipe connected to the exhaust pipe for discharging gas from the chamber, wherein the exhaust pipe is provided so as to surround the introduction pipe.

According to one embodiment of the present invention, a heating device in which an increase in power consumption is prevented can be provided.

FIG. 1 is a plan view schematically illustrating a display device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view illustrating a schematic configuration in a display area of the display device according to the first embodiment of the present invention. 5 is a flowchart illustrating a method for manufacturing a display device according to the first embodiment of the present invention. 3 is a flowchart illustrating a method for manufacturing a resin layer according to the first embodiment of the present invention. FIG. 2 is a diagram illustrating a cross section of a chamber of the heating device according to the first embodiment. FIG. 2 is a diagram illustrating an upper surface of a chamber of the heating device according to the first embodiment. FIG. 6 is a sectional view taken along line BB shown in FIG. 5. It is sectional drawing showing the shape of the piping which concerns on the modification of Embodiment 1. It is a figure showing the section of the chamber of the heating device concerning Embodiment 2. FIG. 7 is a diagram illustrating an upper surface of a chamber of the heating device according to the second embodiment. It is a figure showing the section of the chamber of the heating device concerning Embodiment 3. FIG. 13 is a diagram illustrating an upper surface of a chamber of the heating device according to the third embodiment.

[Embodiment 1]
In the following, “same layer” means being formed in the same process, “lower layer” means being formed in a process earlier than the layer to be compared, The “upper layer” means that it is formed in a process subsequent to the layer to be compared.

FIG. 1 is a plan view of the display device 2 according to the first embodiment. As shown in FIG. 1, the display device 2 according to the present embodiment has a display area DA and a frame area NA adjacent to the periphery of the display area DA. A terminal portion T is formed at one end of the frame region NA. A driver or the like (not shown) that supplies a signal for driving each light emitting element in the display area DA via a connection line CL from the display area DA is mounted on the terminal portion T.

FIG. 2 is a cross-sectional view illustrating a schematic configuration in a display area of the display device 2 according to the first embodiment. FIG. 2 shows a cross section taken along line AA in FIG. As shown in FIG. 2, the display device 2 includes a lower film 10, an adhesive layer 11, a resin layer 12, a barrier layer 3, a TFT layer 4, a light emitting element layer 5, a sealing layer 6 is provided. The display device 2 may include a functional film 39 having an optical compensation function, a touch sensor function, a protection function, and the like, further above the sealing layer 6.

The lower film 10 is a base film of the display device 2 and may include, for example, an organic resin material. The adhesive layer 11 is a layer for bonding the lower film 10 and the resin layer 12, and may be formed using a conventionally known adhesive. It is preferable to use a material having high heat resistance and a linear expansion coefficient close to that of glass, such as polyimide or polyamide, as the resin layer 12.

The barrier layer 3 is a layer that prevents foreign substances such as water and oxygen from penetrating into the TFT layer 4 and the light emitting element layer 5 when the display device 2 is used. The barrier layer 3 can be composed of, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film formed by CVD, or a stacked film thereof.

The TFT layer 4 includes, in order from the lower layer, a semiconductor film 15, a first inorganic insulating film 16 (gate insulating film), a gate electrode GE, a second inorganic insulating film 18, a capacitor electrode CE, and a third inorganic insulating film. 20, a source wiring SH (metal wiring layer), and a planarizing film 21 (interlayer insulating film). A transistor Tr, which is a thin-layer transistor (TFT), is configured to include the semiconductor film 15, the first inorganic insulating film 16, and the gate electrode GE.

The semiconductor film 15 is made of, for example, low-temperature polysilicon (LTPS) or an oxide semiconductor. Note that in FIG. 2, a TFT having the semiconductor film 15 as a channel is illustrated as having a top gate structure; however, a TFT having a bottom gate structure may be employed (for example, a case where the channel of the TFT is an oxide semiconductor).

For example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), and copper (Cu) are used for the gate electrode GE, the capacitor electrode CE, or the source wiring SH. May be included. That is, the gate electrode GE, the capacitor electrode CE, or the source wiring SH is formed of a single-layer film or a stacked film of the above-described metal.

The first inorganic insulating film 16, the second inorganic insulating film 18, and the third inorganic insulating film 20 are, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a stacked film thereof formed by a CVD method. Can be configured by

(4) The flattening film 21 can be made of a coatable photosensitive organic material such as polyimide or acrylic.

The light-emitting element layer 5 (for example, an organic light-emitting diode layer) includes, in order from the bottom, a pixel electrode 22 (a first electrode, for example, an anode), a cover film (edge cover) 23 that covers the edge of the pixel electrode 22, and an EL (electrode). (Luminescence) layer 24 and an upper electrode (second electrode, for example, a cathode) 25. The light-emitting element layer 5 includes, for each sub-pixel SP (pixel), a light-emitting element (for example, an OLED: organic light-emitting diode) including an island-shaped pixel electrode 22, an island-shaped EL layer 24, and an upper electrode 25; And a sub-pixel circuit for driving the same. In the TFT layer 4, a transistor Tr is formed for each sub-pixel circuit, and the sub-pixel circuit is controlled by controlling the transistor Tr.

(4) The pixel electrode 22 is provided at a position overlapping the planarization film 21 and a contact hole that is an opening of the planarization film 21 in a plan view. The pixel electrode 22 is electrically connected to the source wiring SH via a contact hole. Therefore, a signal in the TFT layer 4 is supplied to the pixel electrode 22 via the source wiring SH. Note that the thickness of the pixel electrode 22 may be, for example, 100 nm.

The pixel electrode 22 is formed in an island shape for each of the plurality of sub-pixels SP, is made of, for example, a stack of an alloy containing ITO (Indium Tin In Oxide) and Ag, and has light reflectivity. The upper electrode 25 is formed as a solid layer as a common layer of the plurality of sub-pixels SP, and can be made of a light-transmitting conductive material such as ITO (Indium Tin Oxide) and IZO (Indium Zinc Oxide).

The cover film 23 is an organic insulating film and is formed at a position covering the edge of the pixel electrode 22. An opening is formed in the cover film 23 for each of the plurality of sub-pixels SP, and a part of the pixel electrode 22 is exposed through the opening. The cover film 23 can be made of, for example, a coatable material such as polyimide.

The EL layer 24 is configured by, for example, stacking a hole transport layer, a light emitting layer, and an electron transport layer in this order from the lower layer side. In the present embodiment, at least one layer of the EL layer 24 is formed by an evaporation method. In the present embodiment, each layer included in the EL layer 24 may be formed in an island shape for each sub-pixel SP, or may be formed in a solid shape as a common layer of a plurality of sub-pixels SP. .

When the light emitting element layer 5 is an OLED layer, holes and electrons are recombined in the EL layer 24 by the drive current between the pixel electrode 22 and the upper electrode 25, and the excitons generated by the recombination fall to the ground state. Light is emitted. Since the upper electrode 25 has a light transmitting property and the pixel electrode 22 has a light reflecting property, light emitted from the EL layer 24 passes through the upper electrode 25 and is emitted upward in the plane of FIG. As described above, the display device 2 has, for example, top emission.

The sealing layer 6 includes a first inorganic sealing film 26 above the upper electrode 25, an organic sealing film 27 above the first inorganic sealing film 26, and a first inorganic sealing film 27 above the organic sealing film 27. 2 and an inorganic sealing film 28 to prevent foreign substances such as water and oxygen from penetrating into the light emitting element layer 5. The first inorganic sealing film 26 and the second inorganic sealing film 28 can be formed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a stacked film thereof formed by CVD. . The organic sealing film 27 can be made of a coatable photosensitive organic material such as polyimide or acrylic.

FIG. 3 is a flowchart for explaining a method for manufacturing the display device 2 according to the first embodiment. A method for manufacturing the display device 2 will be described with reference to FIGS.

First, the resin layer 12 is formed on a not-shown translucent support substrate (for example, mother glass) (Step S1). The details of the method for forming the resin layer 12 will be described later. Then, the barrier layer 3 is formed on the resin layer 12 (Step S2). Next, the TFT layer 4 is formed on the barrier layer 3 (Step S3). Next, a top emission type light emitting element layer 5 is formed on the TFT layer 4 (Step S4). Next, the sealing layer 6 is formed on the light emitting element layer 5 (Step S5). Next, an upper surface film is attached on the sealing layer 6 (Step S6).

Next, the support substrate is separated from the resin layer 12 by laser light irradiation or the like (Step S7). Next, the lower surface film 10 is attached to the lower surface of the resin layer 12 via the adhesive layer 11 (Step S8). Next, the laminate including the lower film 10, the resin layer 12, the barrier layer 3, the TFT layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of pieces (Step S9). Next, the functional film 39 is attached to the obtained individual pieces (Step S10). Next, an electronic circuit board (for example, an IC chip and an IC chip) is attached to a terminal portion TS formed at an end which is a part of a non-display region NA (frame region) outside the display region DA in which the plurality of sub-pixels are formed. FPC) is mounted (step S11). Thus, the display device 2 is completed.

FIG. 4 is a flowchart for explaining a method for manufacturing the resin layer 12 according to the first embodiment. That is, step S1 shown in FIG. 3 specifically includes steps S21 to S23 shown in FIG.

{Circle around (1)} First, a mixture which is a solution to be the resin layer 12 is applied onto a supporting substrate (for example, mother glass) (Step S21, application step). The mixture used in step S21 may include, for example, a polyimide precursor and an organic solvent. For example, the precursor of the polyimide may include polyamic acid, and the organic solvent may include NMP (N-methyl-2-pyrrolidene). As a method for applying the mixture, for example, a so-called slit coater method or an inkjet method can be used.

Next, the support substrate to which the mixture has been applied is carried into a chamber (chamber) in which prebaking is performed, and prebaking is performed (step S22, prebaking step). The pre-bake step may be performed, for example, under a reduced pressure environment of 80 ° C. or less. By performing the pre-bake, the fixation of the coating liquid due to the volatilization of the solvent applied on the supporting substrate (making the coating liquid difficult to drip or flow) progresses, and the mixture on the supporting substrate is mixed. Fluidity decreases. For example, the content of the organic solvent in the mixture on the supporting substrate may be reduced to about 10% by performing prebaking.

Next, the pre-baked support substrate is carried into a chamber for curing and baking (actual baking) (step S23, cure baking step (actual baking step)). In the curing bake step, for example, the precursor in the mixture is imidized by heating the mixture on the supporting substrate at about 150 ° C. to 250 ° C. in a low oxygen atmosphere of about 500 ppm to several ppm or less, and further from there. The temperature in the chamber is increased to 450 to 520 ° C., and the supporting substrate and the mixture are heated for a predetermined time. As described above, the resin layer 12 (see FIG. 2) is formed on the supporting substrate by the high-temperature heating in the curing and baking step. When the heating at 450 ° C. to 520 ° C. for a predetermined time is completed, the heating in the chamber is stopped and the inside of the chamber is cooled. Thereby, the temperature in the chamber is returned to room temperature. Then, the cure bake process is completed. Then, the process proceeds to step S2 shown in FIG.

Although the pre-bake step and the cure-bake step have been described to be performed in separate chambers, the pre-bake step and the cure-bake step may be performed in the same chamber.

Next, the details of the heating device used in the curing and baking step will be described with reference to FIGS. FIG. 5 is a diagram illustrating a cross section of the chamber 41 of the heating device 40 according to the first embodiment. FIG. 6 is a diagram illustrating an upper surface of the chamber 41 of the heating device 40 according to the first embodiment. FIG. 7 is a sectional view taken along line BB shown in FIG. The heating device 40 is a heating device used to heat the supporting substrate and the mixture at a high temperature in the curing and baking process.

As shown in FIGS. 5 and 6, the heating device 40 includes a chamber 41, a gas supply source (first gas supply source) 50A, and a pipe (first pipe) 80A. The chamber 41 is a chamber for curing and baking the mixture 12a on the support substrate S.

The chamber 41 is a space for baking the mixture 12a (a mixture that becomes the resin layer 12), which is a resin material. The chamber 41 includes opposing

side walls

41a and 41b, opposing

side walls

41c and 41d, a bottom part 41e, and an upper part 41f. The side walls 41a to 41d stand on the bottom 41e, and the upper portion 41f is supported by the side walls 41a to 41d. The side wall 41c is provided with an opening through which the support substrate S can be taken in and out of the chamber 41, and the side wall 41c is provided with a door. By closing the door 42, the inside of the chamber 41 is sealed. The side wall 41a is provided with an opening connected to the pipe (first pipe) 80A.

In the chamber 41, a plurality of heating units 43 and a plurality of mounting units 44 are provided. The heating unit 43 is a heater. The mounting section 44 is a table on which the support substrate S is mounted. The heating unit 43 and the placement unit 44 are provided so as to alternately overlap with each other. That is, the mounting section 44 is sandwiched between the heating sections 43 provided above and below. In the example illustrated in FIG. 5, three stages of the mounting units 44 are provided in the chamber 41, and the heating units 43 are provided so as to vertically face each of the three stages of the mounting units 44. On the mounting portion 44, a support substrate S on which the mixture 12a (mixture to become the resin layer 12) which has been finished up to pre-baking is mounted. Thus, the support substrate S and the mixture 12a placed on the placement unit 44 are heated at a high temperature by the heating unit 43.

The pipe 80A is a double pipe including the introduction pipe 60A and the exhaust pipe 70A provided so as to surround the introduction pipe 60A.

As shown in FIGS. 5 and 7, the introduction pipe 60A is mostly inserted into the exhaust pipe 70A. In the present embodiment, the introduction pipe 60A and the exhaust pipe 70A are cylinders having a circular cross section.

(5) As shown in FIG. 5, the introduction pipe 60A is connected to the side wall 41a of the chamber 41 and also to the gas supply source 50A. The introduction pipe 60A is a pipe that introduces the inert gas supplied from the gas supply source 50A into the chamber 41. By introducing an inert gas into the chamber 41, the inside of the chamber 41 is replaced with an inert gas from air, and becomes a low oxygen state. Accordingly, the mixture 12a on the support substrate S can be cured and bake under a low oxygen atmosphere.

The introduction pipe 60A includes an introduction trunk pipe 61A connected to the gas supply source 50A, and one or more introduction branch pipes 62A branched from the introduction trunk pipe 61A and connected to the side wall 41a of the chamber 41. I have. Thereby, as shown by the arrow INA, the inert gas supplied from the gas supply source 50A passes through the introduction main pipe 61A, and further, one or a plurality of introduction branch pipes 62A branched from the introduction main pipe 61A. Through the inside, it is supplied into the chamber 41. In the example shown in FIG. 5, three introduction branch pipes 62A branch from one introduction trunk pipe 61A, and the tips of the three introduction branch pipes 62A are connected to the side walls 41a of the chamber 41. The numbers of the introduction trunk pipe 61A and the introduction branch pipe 62A are not limited to the example shown in FIG. As the inert gas supplied from the gas supply source 50A, for example, N ₂ gas can be mentioned. Further, as the inert gas supplied from a gas supply source 50A, also outside than _{N 2} gas, for example, it can be mentioned He, Ar, and gases Ne, and the like.

The exhaust pipe 70A is connected to the side wall 41a of the chamber 41. The exhaust pipe 70A is provided with an exhaust part (fan) 75A. The exhaust pipe 70 </ b> A is a pipe that discharges gas in the chamber 41. The gas discharged from the chamber 41 through the exhaust pipe 70A is a mixed gas of the air in the chamber 41 and the inert gas introduced into the chamber 41. The gas discharged from the chamber 41 is a high-temperature gas because the gas is discharged while being heated in the chamber 41.

The exhaust pipe 70A includes an exhaust main pipe 71A provided with an exhaust portion 75A, and one or more exhaust branch pipes 72A branched from the exhaust main pipe 71A and connected to the side wall 41a of the chamber 41. . Thereby, as shown by the arrow OUTA, the gas heated in the chamber 41 passes through the one or more exhaust branch pipes 72A, and further, the exhaust main pipe to which the one or more exhaust branch pipes 72A are connected. The gas is exhausted from the inside of the chamber 41 to the outside of the chamber 41 through the inside of 71A. In the example shown in FIG. 5, three exhaust branch pipes 72A are branched from one exhaust main pipe 71A, and the tips of the three exhaust branch pipes 72A are connected to the side walls 41a of the chamber 41. The number of the exhaust main pipe 71A and the exhaust branch pipe 72A is not limited to the example shown in FIG.

The exhaust section 75A has a fan. By driving the fan, the exhaust efficiency in the exhaust pipe 70A can be increased.

The exhaust pipe 70A is provided so as to surround the introduction pipe 60A. In the example shown in FIG. 5, the exhaust branch pipe 72A surrounds the outside of the introduction branch pipe 62A, and the exhaust main pipe 71A surrounds most of the introduction main pipe 61A. Thus, the exhaust pipe 70A is provided so as to surround one or a plurality of introduction branch pipes 62A and at least a part of the introduction trunk pipe 61A.

The introduction main pipe 61A is exposed to the outside from the inside of the exhaust main pipe 71A near the gas supply source 50A and is connected to the gas supply source 50A. Thereby, when the gas heated in the chamber 41 passes through the exhaust pipe 70A, the inert gas passing through the introduction pipe 60A is heated. Therefore, the inert gas supplied from the gas supply source 50A into the introduction pipe 60A is heated and heated by the exhaust pipe 70A (that is, by the gas passing through the exhaust pipe 70A) in the process of passing through the introduction pipe 60A. It is introduced into the chamber 41 in a state.

Here, in the cure bake process, the temperature in the chamber 41 is maintained at a high temperature. For this reason, when an inert gas at a temperature considerably lower than the temperature in the chamber 41 (for example, about room temperature) is introduced into the chamber 41, the temperature near the introduction pipe 60A in the chamber 41 becomes lower than in other places. In this case, fumes (foreign matter) are likely to be generated and adhere to the mixture 12a in which the thermal reaction proceeds in the chamber 41, near the introduction pipe 60A. Then, the fumes attached and deposited fly to the support substrate S by the inert gas, which causes a decrease in yield. As an example of the fume (foreign matter) generated, for example, a floating substance of polyamic acid contained in the mixture 12a in which the thermal reaction proceeds can be cited.

(4) In order to prevent the generation of the fume, a method is conceivable in which a separate heater is provided around the introduction pipe 60A and the introduction pipe 60A is heated by the heater.

However, in the cure bake process, the inside of the chamber 41 is heated at a high temperature for a long time, so that the power consumption is large. That is, in the curing and baking step of the mixture 12a on the supporting substrate S, the temperature in the chamber 41 needs to be raised to about 450 ° C. to 520 ° C., and the predetermined time for curing and baking is about 3 hours to 12 hours. May require. As described above, in order to maintain the temperature in the chamber 41 at a high temperature for a long time, it is necessary to continuously supply a large current to the heating unit 43 for a long time.

In addition, there is a tendency that the size of the support substrate S (mother glass) is increased, the number of stages of the mounting portion 44 in the chamber 41 is increased, and the capacity of the chamber 41 is increased. For example, in a heating device having a multistage structure capable of curing and baking 100 or more support substrates S at one time, power consumption for maintaining the temperature in the chamber 41 is considerably large.

{Circle around (4)} In the cure bake step, it is necessary to keep supplying an inert gas into the chamber 41 in order to keep the inside of the chamber 41 in a low oxygen state. As described above, it is necessary to keep operating the gas supply source 50A during the curing and baking process, and from this point, the power consumption in the curing and baking process also tends to increase.

Therefore, if a separate heater is provided to heat the introduction pipe 60A, power consumption will be further increased.

Therefore, as described above, in the heating device 40 according to the present embodiment, the exhaust pipe 70A is provided so as to surround the introduction pipe 60A. In other words, the exhaust pipe 70A is provided so as to heat the introduction pipe 60A when the gas containing the inert gas heated in the chamber 41 is discharged through the exhaust pipe 70A. That is, the inert gas in the introduction pipe 60A is heated by using the waste heat exhausted from the chamber 41 through the exhaust pipe 70A. As described above, the introduction pipe 60 </ _b > A is heated by the gas containing the inert gas (N _{2 in} this embodiment) heated in the chamber 41.

ため Therefore, the inert gas in the introduction pipe 60A can be heated by the exhaust pipe 70A (that is, by the gas passing through the exhaust pipe 70A) without providing a separate heater. This can prevent further increase in power consumption for heating the inert gas passing through the introduction pipe 60A.

Then, the heated inert gas is introduced into the chamber 41 through the introduction pipe 60A. Accordingly, it is possible to prevent fume (foreign matter) from being generated in the vicinity of the introduction pipe 60A in the chamber 41. For this reason, fumes (foreign matter) can be prevented from adhering to the vicinity of the introduction pipe 60A in the mixture 12a in which the thermal reaction proceeds, and a decrease in yield can be prevented.

That is, according to the heating device 40, the mixture 12a can be heated (cured bake) while suppressing an increase in power consumption and preventing fume (foreign matter) from adhering.

As described above, the heating device 40 has the exhaust pipe 70A and the pipe 80A including the introduction pipe 60A surrounded by the exhaust pipe 70A. The pipe 80A, which is a double pipe, can be described as a heat exchanger that exchanges heat between the exhaust pipe 70A and the introduction pipe 60A. Further, in the heating device 40, the heat exchanger, which is a double pipe, is directly connected to the chamber 41. As described above, since the heat exchanger is directly connected to the chamber 41, the gas heated in the chamber 41 can be directly introduced into the double-pipe heat exchanger (that is, the exhaust pipe 70A). it can. For this reason, according to the heating device 40, heat exchange can be efficiently performed in the pipe 80A as compared with a configuration in which the heat exchanger is provided away from the chamber.

Also, as shown in FIG. 5, the introduction tube 60A includes a protruding portion 62Aa protruding into the chamber 41. Specifically, each introduction branch pipe 62A includes a protruding portion 62Aa that penetrates the side wall 41a of the chamber 41 and protrudes from the inner wall surface inside the chamber 41 in the side wall 41a toward the center of the chamber 41. That is, the introduction port 60Aa, which is the tip of the introduction pipe 60A in the chamber 41, protrudes from the inner wall surface in the chamber 41 on the side wall 41a toward the center of the chamber 41. Thereby, an inert gas can be introduced from each introduction branch pipe 62A in a more central direction in the chamber 41 (a direction approaching the support substrate S and the mixture 12a). Therefore, the atmosphere near the mixture 12a on the support substrate S can be maintained in a lower oxygen state.

It is preferable that the protruding portion 62Aa protrudes into the chamber 41 more than the exhaust pipe 70A. For example, the exhaust pipe 70A is flush with the inner wall surface inside the chamber 41 in the side wall 41a of the chamber 41 to which the exhaust pipe 70A is connected. In other words, the exhaust port 70Aa, which is the tip of the exhaust pipe 70A in the chamber 41, is flush with the inner wall surface in the chamber 41. As described above, since the inlet 60Aa of the inlet pipe 60A protrudes into the chamber 41 from the outlet 70Aa of the exhaust pipe 70A, the inert gas introduced into the chamber 41 from the inlet 60Aa is reduced. It is possible to prevent the gas from being exhausted directly from the exhaust port 70Aa without staying in the chamber 41 (that is, without being sufficiently heated in the chamber 41). Thus, the gas sufficiently heated in the chamber 41 can be exhausted from the exhaust pipe 70A. Therefore, the gas exhausted through the exhaust pipe 70A can more reliably heat the inert gas passing through the introduction pipe 60.

The exhaust port 70Aa of the exhaust pipe 70A is not limited to be flush with the inner wall surface in the chamber 41, and may protrude into the chamber 41 from the inner wall surface of the side wall 41a of the chamber 41.

Further, as shown in FIG. 7, the exhaust pipe 70A surrounds the outer circumference of the introduction pipe 60A. The cross-sectional area of the exhaust pipe 70A that contributes to the exhaust is preferably larger than the cross-sectional area of the introduction pipe 60A. Thus, the exhaust pipe 70A is designed to surround the introduction pipe 60A.

The pipe 80A may have a configuration in which the exhaust pipe 70A is wound around the outer circumference of the introduction pipe 60A instead of the configuration in which the introduction pipe 60A is inserted inside the exhaust pipe 70A. In this way, the heated gas passing through the exhaust pipe 70A can also heat the inert gas passing through the introduction pipe 60A.

FIG. 8 is a cross-sectional view illustrating a shape of a pipe 80A1 according to a modification of the first embodiment. As shown in FIG. 8, the heating device 40 (see FIG. 5 and the like) may include a pipe 80A1 instead of the pipe 80A. The pipe 80A1 includes an exhaust pipe 70A and an introduction pipe 60A1. The introduction pipe 60A1 has a different cross-sectional shape from the introduction pipe 60A. The other configuration of the pipe 80A1 is the same as that of the pipe 80A. The introduction pipe 60A1 has irregularities on the outer wall surrounded by the exhaust pipe 70A. In the example shown in FIG. 8, the introduction pipe 60A1 has a star-shaped cross section. Since the introduction pipe 60A1 has irregularities on the outer wall as compared with the case where the cross-sectional shape is circular, the surface area of the outer wall increases. Thereby, the introduction pipe 60A1 is efficiently heated by the heated gas in the exhaust pipe 70A flowing around the introduction pipe 60A1. As a result, it is possible to efficiently heat the inert gas passing through the introduction pipe 60A1.

[Embodiment 2]
FIG. 9 is a diagram illustrating a cross section of a chamber 41A of a heating device 40A according to the second embodiment. FIG. 10 is a diagram illustrating an upper surface of a chamber 41A of a heating device 40A according to the second embodiment. The heating device 40A has a configuration in which the heating device 40 (FIG. 5 and the like) is further provided with a double pipe.

The heating device 40A includes a chamber 41A, a gas supply source (first gas supply source) 50A, a pipe (first pipe) 80A, a gas supply source (second gas supply source) 50B, and a pipe (second pipe). 80B.

The chamber 41A is a chamber for curing and baking the mixture 12a on the support substrate S. The chamber 41A includes opposing side walls 41Aa and 41Ab, opposing side walls 41Ac and 41Ad, a bottom 41Ae, and an upper part 41Af. The side walls 41Aa to 41Ad stand on the bottom 41Ae, and the upper portion 41Af is supported by the side walls 41Aa to 41Ad. The side wall 41Ac is provided with an opening through which the support substrate S can be taken in and out of the chamber 41A, and the side wall 41Ac is provided with a door 42. By closing the door 42, the inside of the chamber 41A is sealed. The side wall 41Aa is provided with an opening connected to the pipe (first pipe) 80A, and the side wall 41Ab is provided with an opening connected to the pipe (second pipe) 80B. In the chamber 41A, similarly to the chamber 41, a plurality of heating units 43 and a plurality of mounting units 44 are provided so as to be alternately overlapped while being separated from each other.

The pipe 80B has the same configuration and the same shape as the pipe 80A. That is, the pipe 80B is a double pipe including the introduction pipe 60B and the exhaust pipe 70B provided so as to surround the introduction pipe 60B.

The introduction pipe 60B is connected to the side wall 41Ab of the chamber 41A and also to the gas supply source 50B. The introduction pipe 60B is a pipe that introduces the inert gas supplied from the gas supply source 50B into the chamber 41A. The introduction pipe 60B includes an introduction trunk pipe 61B connected to the gas supply source 50B, and one or more introduction branch pipes 62B branched from the introduction trunk pipe 61B and connected to the side wall 41Ab of the chamber 41A. I have. Thereby, as shown by the arrow INB, the inert gas supplied from the gas supply source 50B passes through the introduction trunk pipe 61B, and further, one or a plurality of introduction branch pipes 62B branched from the introduction trunk pipe 61B. Through the inside, it is supplied into the chamber 41A. In the example shown in FIG. 9, three introduction branch pipes 62B branch off from one introduction trunk pipe 61B, and the tips of the three introduction branch pipes 62B are connected to the side walls 41Ab of the chamber 41A. The numbers of the introduction trunk pipes 61B and the introduction branch pipes 62B are not limited to the example shown in FIG.

The exhaust pipe 70B is connected to the side wall 41Ab of the chamber 41A. The exhaust pipe 70B is provided with an exhaust part (fan) 75B. The exhaust pipe 70B is a pipe that discharges gas in the chamber 41A. The exhaust pipe 70B includes an exhaust main pipe 71B provided with an exhaust portion 75B, and one or more exhaust branch pipes 72B branched from the exhaust main pipe 71B and connected to the side wall 41Ab of the chamber 41A. . Thereby, as shown by the arrow OUTB, the gas heated in the chamber 41 passes through the one or more exhaust branch pipes 72B, and further, the exhaust main pipe to which the one or more exhaust branch pipes 72B are connected. The gas is exhausted from the inside of the chamber 41A to the outside of the chamber 41A through the inside of the chamber 71B. In the example shown in FIG. 9, three exhaust branch pipes 72B are branched from one exhaust main pipe 71B, and the tips of the three exhaust branch pipes 72B are connected to the side walls 41Ab of the chamber 41A. The numbers of the exhaust main pipe 71B and the exhaust branch pipe 72B are not limited to the example shown in FIG.

The exhaust pipe 70B is provided so as to surround the introduction pipe 60B. In the example shown in FIG. 9, the exhaust branch pipes 72B respectively surround the outside of the introduction branch pipe 62B, and the exhaust main pipe 71B surrounds the outside of most of the introduction main pipes 61B. As described above, the exhaust pipe 70B is provided so as to surround one or a plurality of introduction branch pipes 62B and at least a part of the introduction trunk pipe 61B.

As described above, the heating device 40A includes the

introduction pipes

60A and 60B, and further includes the

exhaust pipes

70A and 70B. The exhaust pipe 70A is provided so as to surround the introduction pipe 60A, and the exhaust pipe 70B is provided so as to surround the introduction pipe 60B. Further, the exhaust pipe 70A and the introduction pipe 60A, and the exhaust pipe 70B and the introduction pipe 60B are connected to the mutually facing side walls 41Aa and 41Ab of the chamber 41Ab. That is, the exhaust pipe 70A and the introduction pipe 60A are connected to the side wall 41Aa, and the exhaust pipe 70B and the introduction pipe 60B are connected to the side wall 41Ab. Thereby, the heated inert gas can be efficiently supplied from both directions in the chamber 41A, and the waste heat in the chamber 41A can be efficiently exhausted in both directions (directions of the

pipes

80A and 80B). can do.

導入 The introduction pipe 60B includes a protruding portion 62Ba protruding into the chamber 41A. Specifically, each introduction branch pipe 62B includes a protruding portion 62Ba that penetrates the side wall 41Ab of the chamber 41A and protrudes from the inner wall surface in the chamber 41A in the side wall 41Ab toward the center of the chamber 41A.

It is preferable that the protruding portion 62Ba protrudes into the chamber 41A from the exhaust pipe 70B. For example, the exhaust pipe 70B is flush with the inner wall surface inside the chamber 41A in the side wall 41Ab of the chamber 41A to which the exhaust pipe 70B is connected. In other words, the exhaust port 70Ba, which is the tip of the exhaust pipe 70B in the chamber 41A, is flush with the inner wall surface in the chamber 41A. As described above, since the introduction port 60Ba of the introduction pipe 60B protrudes into the chamber 41A from the exhaust port 70Ba of the exhaust pipe 70B, the gas sufficiently heated in the chamber 41A is exhausted from the exhaust pipe 70B. can do. For this reason, the gas exhausted through the exhaust pipe 70B can more reliably heat the inert gas passing through the introduction pipe 60B.

The exhaust port 70Ba of the exhaust pipe 70B is not limited to be flush with the inner wall surface inside the chamber 41A, and may protrude into the chamber 41A from the inner wall surface of the side wall 41Ab of the chamber 41A.

[Embodiment 3]
FIG. 11 is a diagram illustrating a cross section of a chamber 41A of a heating device 40C according to the third embodiment. FIG. 12 is a diagram illustrating an upper surface of a chamber 41A of a heating device 40C according to the third embodiment. The heating device 40C includes an introduction pipe (third introduction pipe) 60C, an exhaust pipe (third exhaust pipe) 70C, and a gas supply instead of the pipe 80B and the gas supply source 50B provided in the heating apparatus 40A (FIG. 9 and the like). This is a configuration including a source 50C. Other configurations of the heating device 40C are the same as those of the heating device 40A.

In the present embodiment, the introduction pipe 60C is exposed and is not surrounded by the exhaust pipe 70C. The introduction pipe 60C is connected to the side wall 41Ab of the chamber 41A and also to the gas supply source 50C.

In the heating device 40C, the pipe 80A is used during the cure bake, and the inlet pipe 60C and the exhaust pipe 70C are used to cool the inside of the chamber 41A after the completion of the cure bake.

(4) The introduction pipe 60C is a pipe for introducing a gas supplied from the gas supply source 50C into the chamber 41A in order to introduce a gas for cooling the inside of the chamber 41 after the completion of the cure bake in the chamber 41A. The introduction pipe 60C includes an introduction trunk pipe 61C connected to the gas supply source 50C, and one or more introduction branch pipes 62C branched from the introduction trunk pipe 61C and connected to the side wall 41Ab of the chamber 41A. I have.

Thereby, as indicated by the arrow INC, the gas (for example, compressed air) supplied from the gas supply source 50C passes through the introduction trunk pipe 61C, and further, has one or more introduction branches branched from the introduction trunk pipe 61C. The gas is supplied into the chamber 41A through the pipe 62C. In the example shown in FIG. 11, three introduction branch pipes 62C branch off from one introduction trunk pipe 61C, and the tips of the three introduction branch pipes 62C are connected to the side walls 41Ab of the chamber 41A. The numbers of the introduction trunk pipes 61C and the introduction branch pipes 62C are not limited to the example shown in FIG.

バルブ Further, a valve 96 is provided on one or a plurality of introduction branch pipes 62C. During the cure bake, the valve 96 is closed, and when the cure bake is completed and the inside of the chamber 41 is cooled, the valve 96 is opened to use the introduction pipe 60C.

The exhaust pipe 70C is connected to the side wall 41Ab of the chamber 41A, and does not surround the introduction pipe 60C. In the example shown in FIG. 11, the exhaust pipe 70C is connected to the side wall 41Ab of the chamber 41A without branching. However, the exhaust pipe 70C includes an exhaust main pipe and one or more exhaust branch pipes branched from the exhaust main pipe, and the one or more exhaust branch pipes may be connected to the side wall 41Ab of the chamber 41A. . An exhaust part 75C is provided in the exhaust pipe 70C. A valve 97 is provided in the exhaust pipe 70C. During the cure bake, the valve 97 is closed, and when the cure bake is completed and the inside of the chamber 41 is cooled, the exhaust pipe 70C is used by opening the valve 97.

Thus, the exhaust pipe 70C does not surround the introduction pipe 60C. For this reason, when the inside of the chamber 41 is cooled after the completion of the curing bake, a gas having a temperature lower than the temperature in the chamber 41 (for example, a temperature around room temperature) is passed through the introduction pipe 60C while the temperature is low. , Chamber 41A. Thereby, the temperature in the chamber 41A can be quickly reduced.

導入 The introduction pipe 60C includes a protrusion 62Ca protruding into the chamber 41A. Specifically, each introduction branch pipe 62C includes a protruding portion 62Ca that penetrates the side wall 41Ab of the chamber 41A and protrudes from the inner wall surface inside the chamber 41A in the side wall 41Ab toward the center of the chamber 41A.

It is preferable that the protruding portion 62Ca protrudes into the chamber 41A from the exhaust pipe 70C. For example, the exhaust pipe 70C is flush with the inner wall surface inside the chamber 41A in the side wall 41Ab of the chamber 41A to which the exhaust pipe 70C is connected. In other words, the exhaust port 70Ca at the tip of the exhaust pipe 70C in the chamber 41A is flush with the inner wall surface in the chamber 41A. Thus, the gas introduced from the introduction pipe 60C is directly exhausted from the exhaust port 70Ca because the introduction port 60Ca of the introduction pipe 60C protrudes into the chamber 41A from the exhaust port 70Ca of the exhaust pipe 70C. Can be prevented. Therefore, the inside of the chamber 41A can be cooled more efficiently.

The exhaust port 70Ca of the exhaust pipe 70C is not limited to be flush with the inner wall surface inside the chamber 41A, and may protrude into the chamber 41A from the inner wall surface of the side wall 41Ab of the chamber 41A.

The present invention is not limited to the embodiments described above, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention. Furthermore, new technical features can be formed by combining the technical means disclosed in each embodiment.

40, 40A, 40C Heating device 2 Display device 12 Resin layer 12a Mixture (resin material)
41, 41A, 41Ab Chambers 41a to 41d, 41Aa to 41Ad Side walls 41e, 41Ae Bottom part 41f, 41Af Upper part 43 Heating part 44 Placement parts 50A to 50C Gas supply sources 60A, 60A1 Introducing pipe (first introducing pipe)
60B inlet pipe (second inlet pipe)
60C inlet pipe (third inlet pipe)
60Aa, 60Ba,

60Ca Inlet

61A, 61B, 61C Introductory

main pipe

62A, 62B, 62C Introductory branch pipe 62Aa, 62Ba, 62Ca Projection 70A Exhaust pipe (first exhaust pipe)
70B exhaust pipe (second exhaust pipe)
70C exhaust pipe (third exhaust pipe)
70Aa, 70Ba,

70Ca Exhaust ports

71A, 71B Exhaust

main pipes

72A, 72B

Exhaust branch pipes

75A, 75B, 75C Exhaust sections 80A, 80A1, 80B Piping 96, 97 Valve

Claims

A chamber for baking the resin material,
An introduction pipe connected to the chamber and introducing an inert gas into the chamber;
An exhaust pipe connected to the chamber and exhausting gas in the chamber,
The heating device, wherein the exhaust pipe is provided so as to surround the introduction pipe.
2. The exhaust pipe according to claim 1, wherein the exhaust pipe is provided to heat the introduction pipe when the inert gas heated in the chamber is exhausted through the exhaust pipe. 3. Heating equipment.
(3) The heating device according to (1) or (2), wherein the introduction pipe includes a protrusion that protrudes into the chamber.
4. The heating device according to claim 3, wherein the protruding portion protrudes into the chamber from the exhaust pipe. 5.
Further, a gas supply source for supplying the inert gas,
The introduction pipe includes an introduction main pipe connected to the gas supply source, and one or more introduction branch pipes branched from the introduction main pipe and connected to the chamber. The heating device according to any one of claims 1 to 4, wherein:
The heating device according to claim 5, wherein the exhaust pipe is provided so as to surround the one or more introduction branch pipes and at least a part of the introduction trunk pipe.
Furthermore, an exhaust unit provided in the exhaust pipe is provided,
The heating device according to any one of claims 1 to 6, wherein the exhaust unit has a fan.
The heating device according to any one of claims 1 to 7, wherein a cross-sectional area of the exhaust pipe contributing to exhaust is larger than a cross-sectional area of the introduction pipe.
The heating apparatus according to any one of claims 1 to 8, wherein the exhaust pipe is flush with an inner wall surface of the chamber to which the exhaust pipe is connected.
The inert gas heating apparatus according to any one of claims 1 to 9, characterized in that it is N 2.
The inlet tube, the heating device according to claim 10, characterized in that it is heated by the N 2 heated in the chamber.
The heating apparatus according to any one of claims 1 to 11, wherein an irregularity is provided on an outer wall of the introduction pipe surrounded by the exhaust pipe.
The introduction pipe includes a first introduction pipe and a second introduction pipe, and the exhaust pipe includes a first exhaust pipe and a second exhaust pipe,
The first exhaust pipe is provided to surround the first introduction pipe, and the second exhaust pipe is provided to surround the second introduction pipe.
The said 1st exhaust pipe and the said 1st introduction pipe, and the said 2nd exhaust pipe and the said 2nd introduction pipe are each connected to the mutually opposing side wall in the said chamber. 13. The heating device according to any one of items 12 to 12.
The heating apparatus according to any one of claims 1 to 13, further comprising a third exhaust pipe connected to the chamber and not surrounding the introduction pipe.
The heating device according to any one of claims 1 to 14, further comprising a third introduction pipe not surrounded by the exhaust pipe.