WO2020062222A1 - 一种半导体结构及其制造方法 - Google Patents
一种半导体结构及其制造方法 Download PDFInfo
- Publication number
- WO2020062222A1 WO2020062222A1 PCT/CN2018/109052 CN2018109052W WO2020062222A1 WO 2020062222 A1 WO2020062222 A1 WO 2020062222A1 CN 2018109052 W CN2018109052 W CN 2018109052W WO 2020062222 A1 WO2020062222 A1 WO 2020062222A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- composition change
- semiconductor structure
- composition
- periodic
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 139
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 181
- 239000000463 material Substances 0.000 claims abstract description 93
- 230000004888 barrier function Effects 0.000 claims abstract description 68
- 230000000737 periodic effect Effects 0.000 claims description 74
- 238000005530 etching Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 42
- 229910002704 AlGaN Inorganic materials 0.000 claims description 26
- 238000012544 monitoring process Methods 0.000 claims description 13
- 229910021478 group 5 element Inorganic materials 0.000 claims description 11
- 230000006911 nucleation Effects 0.000 claims description 10
- 238000010899 nucleation Methods 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000003467 diminishing effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 261
- 229910002601 GaN Inorganic materials 0.000 description 43
- 239000011229 interlayer Substances 0.000 description 23
- 238000002360 preparation method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 230000003247 decreasing effect Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000007772 electrode material Substances 0.000 description 7
- 230000005533 two-dimensional electron gas Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
Definitions
- the present invention relates to microelectronic technology, and in particular, to a semiconductor structure and a method for manufacturing the semiconductor structure.
- High Electron Mobility Transistor is a heterojunction field effect transistor.
- AlGaN / GaN heterostructure due to the strong two-dimensional electron gas in the AlGaN / GaN heterostructure, usually AlGaN / GaN HEMT is a depletion device, making enhancement devices difficult to implement.
- the application of depletion devices has certain limitations.
- enhanced (normally closed) switching devices are required.
- the enhanced gallium nitride switching device is mainly used in high-frequency devices, power switching devices, and digital circuits. Its research is of great significance.
- a suitable method needs to be found to reduce the channel carrier concentration under the gate at zero gate voltage, for example, by arranging a p-type semiconductor material in the gate region.
- this method has at least the following defects:
- the p-type semiconductor material is set in the gate region. It is necessary to selectively etch p-type semiconductors in regions other than the gate. The precise process control of the etch thickness in the epitaxial direction is very difficult, and it is very easy to over-etch the p-type semiconductor. The semiconductor material etched below it, and the defects brought by the etching will cause a serious current collapse effect, which will also affect the stability and reliability of the device.
- the present invention provides a semiconductor structure and a manufacturing method thereof, which solve the problems of complicated manufacturing processes, poor stability and poor reliability of the existing semiconductor structures.
- a channel layer and a barrier layer prepared in this order;
- the change curve of the component of the component change element in the epitaxial direction includes one or more combinations in the following change stages: a periodic change, an increasing change, and a decreasing change.
- the composition change layer adopts a periodic structure, and the periodic structure includes at least one cycle sequentially superposed along an epitaxial direction, wherein each of the cycles includes a first periodic layer and a second periodic layer sequentially superposed along the epitaxial direction.
- the composition change element exists only in the first periodic layer or the second periodic layer.
- the material of the composition change layer is a III-V compound
- the first periodic layer includes at least one group III element and at least one group V element
- the second periodic layer includes at least one group III element And at least one Group V element
- composition change element is a group III element or a group V element.
- the group III element includes: Al, Ga, and In; and / or,
- the group V element includes: N.
- the semiconductor structure further includes:
- the p-type semiconductor material is selected from one or more of the following: p-type diamond, p-type NiO, p-type GaN, p-type AlGaN, p-type InGaN, and p-type GaN / AlGaN.
- the groove completely penetrates the composition change layer.
- a source region and a drain region on both sides of the gate region are defined on a surface of the barrier layer;
- the semiconductor structure further includes:
- a source electrode disposed in the source region and forming an ohmic contact with the barrier layer
- a drain electrode disposed in the drain region and forming an ohmic contact with the barrier layer.
- the semiconductor structure further includes: a nucleation layer and a buffer layer sequentially prepared under the channel layer.
- An embodiment of the present invention provides a method for manufacturing a semiconductor structure, including the following steps:
- a gate region is defined on a surface of the composition change layer, and a material of the composition change layer includes at least one composition change element;
- the selective etching is stopped when a preset change curve is detected.
- the method before preparing a p-type semiconductor material on the surface of the composition change layer, the method further includes:
- the step of preparing a p-type semiconductor material on the surface of the composition change layer includes:
- a p-type semiconductor material is prepared on the surface of the composition change layer, wherein the p-type semiconductor material covers the surface of the composition change layer and fills the groove.
- a source region and a drain region on both sides of the gate region are defined on a surface of the barrier layer;
- the method further includes:
- the semiconductor structure above the drain region is etched to expose the barrier layer, and a drain electrode that forms an ohmic contact with the barrier layer is prepared in the drain region.
- the method further includes:
- a nucleation layer and a buffer layer were sequentially prepared.
- the semiconductor structure and the manufacturing method thereof provided by the embodiments of the present invention can help reduce the process difficulty when etching a p-type semiconductor material by forming a composition change layer on a barrier layer.
- the composition change of the composition change element in the composition change layer can be monitored.
- the composition of the element with a change in composition it means that the composition change layer has been etched, and the etching process may be stopped at this time. Since the composition change layer can protect the underlying semiconductor structure, by monitoring the composition of the element that changes the composition to control the etching process, damage to the underlying semiconductor structure caused by over-etching can be avoided, and defects caused by the etching can be reduced.
- the stability and reliability of the device are improved, and the process difficulty is reduced.
- Figures 1, 2, 3a, 3b, 4a, 4b, 5a, 5b, 5c, 5d, 5e, 6a, 6b, 6c, and 6d are schematic diagrams of the decomposition of the semiconductor structure structure during the preparation process according to an embodiment of the present invention. .
- FIG. 7 is a schematic flowchart of a manufacturing process of a semiconductor structure according to an embodiment of the present invention.
- 9a, 9b, 10a, and 10b are schematic diagrams of component change curves of component change elements in a semiconductor structure according to an embodiment of the present invention.
- FIG. 7 is a schematic flowchart of a method for manufacturing a semiconductor structure according to an embodiment of the present invention. As shown in FIG. 7, the method for preparing the semiconductor structure includes the following steps:
- a substrate 1 is provided.
- the substrate 1 may be selected from a semiconductor material, a ceramic material, or a polymer material.
- the substrate 1 is preferably made of sapphire, silicon carbide, silicon, lithium niobate, silicon-on-insulator (SOI), gallium nitride, or aluminum nitride.
- Step 702 As shown in FIG. 2, a channel layer 23 and a barrier layer 24 are sequentially grown on the substrate 1.
- the channel layer 23 and the barrier layer 24 may be semiconductor materials capable of forming a two-dimensional electron gas.
- the channel layer 23 may be GaN
- the barrier layer 24 may be AlGaN
- the channel layer 23 and the barrier layer 24 constitute a heterostructure to form a two-dimensional electron gas.
- the channel layer 23 and the barrier layer 24 may also be other materials, such as a GaAs-based material
- the channel layer 23 is GaA S
- the barrier layer 24 is AlGaA S.
- epitaxial layers such as a nucleation layer 21, a buffer layer 22, and the like under the channel layer 23 may be sequentially prepared before the channel layer 23 is prepared.
- a nucleation layer 21 prepared on the substrate 1 and the nucleation The layer 21 may be one or more of AlN and AlGaN.
- the GaN-based semiconductor structure may further include a buffer layer 22 prepared above the nucleation layer 21, and the buffer layer 22 may include GaN, AlGaN, AlInGaN One or more of them.
- Step 703 As shown in FIG. 3a, a composition change layer 3 is formed on the barrier layer 24. A gate region is defined on the surface of the composition change layer 3. The material of the composition change layer 3 includes at least one composition change element.
- the composition change layer 3 may be grown in situ, or may be deposited by atomic layer deposition (ALD), chemical vapor deposition (CVD), or molecular beam epitaxy (MBE, Molecular Beam Epitaxy). Or plasma enhanced chemical vapor deposition (PECVD, Enhanced Chemical Deposition), or low pressure chemical vapor deposition (LPCVD, Low Pressure Chemical Vapor Deposition), or metal organic chemical vapor deposition (MOCVD, Metal-Organic Chemical Vapor Deposition) ), Or a combination thereof. It should be understood that the method for forming the composition change layer 3 described here is merely an example, and the present invention can form the composition change layer 3 by any method known to those skilled in the art.
- ALD atomic layer deposition
- CVD chemical vapor deposition
- MBE molecular beam epitaxy
- PECVD plasma enhanced chemical vapor deposition
- LPCVD low pressure chemical vapor deposition
- MOCVD Metal-Organic Chemical Vapor Deposition
- the variation curve of the composition in the epitaxial direction of the element may include one or more combinations of the following change stages: a periodic change, an increasing change, and a decreasing change.
- the change curve of the component change element can be composed of an increasing change stage (in the range of 0 nm to 10 nm in the epitaxial direction) and a decreasing change stage (in the range of 10 nm to 20 nm in the epitaxial direction).
- the invention does not limit the specific change curve of the composition of the composition change element.
- the composition change layer 3 may adopt a periodic structure.
- the periodic structure includes at least one cycle sequentially superposed along the epitaxial direction, wherein each cycle includes a first cycle sequentially superposed along the epitaxial direction.
- the composition change element exists only in the first periodic layer or the second periodic layer. This can effectively prevent the component monitoring system from over-etching the underlying semiconductor structure due to the reaction delay.
- Step 704 As shown in FIG. 4a, a p-type semiconductor material 5 is prepared on the surface of the composition change layer 3.
- the p-type semiconductor material 5 may be selected from, for example, a combination of one or more of the following materials: p-type diamond, p-type NiO, p-type GaN, p-type AlGaN, and p-type InGaN And p-type GaN / AlGaN.
- Step 705 Selectively etch the p-type semiconductor material 5 to retain the p-type semiconductor material 5 in the gate region, and monitor the composition of the element whose composition changes.
- Step 706 Stop the selective etching when a preset change curve is detected. After the etching is stopped, as shown in FIG. 5a,
- the preset change curve is a change curve of the composition of the composition change element in the composition change layer 3 in the epitaxial direction. Specifically, when a preset change curve is monitored, it means that the composition change layer has been etched, and the etching process may be stopped at this time. Since the composition change layer can protect the underlying semiconductor structure, by monitoring the composition of the element that changes the composition to control the etching process, damage to the underlying semiconductor structure caused by over-etching can be avoided, and defects caused by the etching can be reduced. The stability and reliability of the device are improved, and the process difficulty is reduced.
- the composition of the composition change element in the composition change layer 3 is changed periodically.
- the periodic change may include multiple cycles. This can effectively prevent the component monitoring system from Excessive etching.
- Step 707 as shown in FIG. 6a, the semiconductor structure over the source region is etched to expose the barrier layer 24, the source electrode 6 is prepared in the source region to form an ohmic contact with the barrier layer 24; and the drain is etched away The semiconductor structure above the electrode region exposes the barrier layer 24, and the drain electrode 7 is prepared in the drain region to form an ohmic contact with the barrier layer 24.
- the P-type semiconductor material 5 can be used directly as a gate electrode (as shown in FIG. 6a), or an electrode material 51 can be further fabricated on the P-type semiconductor material 5 as a gate electrode (as shown in FIG. 6c).
- the source electrode 6, the drain electrode 7, and the electrode material 51 on the P-type semiconductor material 5 may be made of a metal material such as a nickel alloy, or may be made of a metal oxide or a semiconductor material.
- the specific preparation materials of the electrode material 51 on the drain electrode 7 and the P-type semiconductor material 5 are not limited.
- the semiconductor structure prepared by using the method for preparing a semiconductor structure provided by the embodiment of the present invention can help reduce the process difficulty of etching the p-type semiconductor material 5 by forming a composition change layer 3 on the barrier layer 24. .
- the composition change of the composition change element in the composition change layer 3 can be monitored.
- the composition of the composition change element is monitored, it means that the composition change layer 3 has been etched, and the etching process may be stopped at this time. Since the composition change layer 3 can protect the underlying semiconductor structure, by monitoring the composition of the composition change element to control the etching process, the damage to the underlying semiconductor structure caused by over-etching can be avoided, and defects caused by the etching can be reduced. , Improve the stability and reliability of the device, while reducing the process difficulty.
- a p-type semiconductor material 5 may also be prepared.
- a groove 4 extending toward the barrier layer 24 was formed in the gate region.
- the groove etching process can be, for example, using a chlorine-based plasma etching. Due to the selectivity of fluorine-based plasma etching, the etching process will be etched to The barrier layer stops at 2400 hours. After the groove 4 is formed, as shown in FIG.
- a p-type semiconductor material 5 covering the groove 4 is first formed over the barrier layer 24; then, the p-type semiconductor material 5 is selectively etched to retain the groove 4
- the p-type semiconductor material 5 is used to form a semiconductor structure as shown in FIG. 5b.
- the semiconductor structure after the source electrode 6 and the drain electrode 7 are prepared can be shown in FIG. 6b.
- the semiconductor structure may not include the preparation process of the groove 4, and the p-type semiconductor material directly It is sufficient to prepare the gate region on the surface of the composition change layer 3.
- the invention does not limit whether the groove 4 needs to be prepared in the semiconductor structure.
- the groove 4 in FIG. 5b completely penetrates the composition change layer 3 and stays on the bottom surface of the composition change layer 3, in other embodiments of the present invention, the groove 4 may not only completely penetrate the composition change layer 3.
- a part of the barrier layer 24 is also penetrated.
- the groove 4 can penetrate to the intermediate layer 242 of the sandwich structure of the barrier layer 24.
- the intermediate layer 242 may be in a part where the groove 4 is formed.
- it acts as a stop layer to protect the first outer interlayer 241 on the surface of the channel layer 23 from being damaged by the local etching process.
- the sandwich structure includes a first outer interlayer 241 prepared on the surface of the channel layer 23, an intermediate layer 242 sandwiched between the first outer interlayer 241 and a second outer interlayer 243, and a second outer interlayer 243.
- the materials of the first outer interlayer 241, the intermediate layer 242 and the second outer interlayer 243 may be adjusted according to the material of the channel layer 23.
- the first outer interlayer 241 and the second outer interlayer 243 may be made of AlGaN or AlInGaN
- the intermediate layer 242 may be made of GaN.
- the content of In and Ga can vary from 0 to 1.
- the invention does not specifically limit the materials of the first outer interlayer 241, the intermediate layer 242, and the second outer interlayer 243.
- the groove 4 may only partially penetrate the composition change layer 3, and the bottom surface of the groove 4 stops inside the composition change layer 3.
- the preparation depth of the groove 4 is not strictly limited, as long as the p-type semiconductor material 5 inside the groove 4 can pinch the n-type conductive layer under the gate to realize a semiconductor structure.
- FIG. 5a is a schematic structural diagram of a semiconductor structure according to an embodiment of the present invention.
- the semiconductor structure includes: a channel layer 23 and a barrier layer 24 that are sequentially prepared; a composition change layer 3 formed on the barrier layer 24, and a gate region is defined on a surface of the composition change layer 3.
- the material of the composition change layer 3 includes at least one composition change element; and a p-type semiconductor material 5 formed in a gate region of the composition change layer 3.
- the channel layer 23 and the barrier layer 24 are sequentially prepared on the substrate 1, and the substrate 1 may be selected from a semiconductor material, a ceramic material, or a polymer material.
- the substrate 1 may be preferably made of sapphire, silicon carbide, silicon, lithium niobate, insulating substrate 1 silicon (SOI), gallium nitride, or aluminum nitride.
- the channel layer 23 and the barrier layer 24 may be semiconductor materials capable of forming a two-dimensional electron gas.
- the channel layer 23 may be GaN
- the barrier layer 24 may be AlGaN
- the channel layer 23 and the barrier layer 24 constitute a heterostructure to form a two-dimensional electron gas.
- the channel layer 23 and the barrier layer 24 may also be other materials, such as a GaAs-based material, the channel layer 23 is GaA S , and the barrier layer 24 is AlGaA S.
- epitaxial layers such as a nucleation layer 21, a buffer layer 22, and the like under the channel layer 23 may be sequentially prepared before the channel layer 23 is prepared.
- a nucleation layer 21 prepared on the substrate 1 which may be One or more of AlN and AlGaN.
- the GaN-based semiconductor structure may further include a buffer layer 22 prepared above the nucleation layer 21, and the buffer layer 22 may include GaN, AlGaN, AlInGaN One or more of them.
- the p-type semiconductor material 5 can be selected according to the materials of the channel layer 23 and the barrier layer 24. Taking a GaN-based semiconductor structure as an example, the p-type semiconductor material 5 may be selected from one or more of the following: p-type diamond, p-type NiO, p-type GaN, p-type AlGaN, p-type InGaN, and p-type GaN / AlGaN.
- composition change layer 3 on the barrier layer 24 can help reduce the process difficulty when etching the p-type semiconductor material 5.
- the composition change of the composition change element in the composition change layer 3 can be monitored.
- the composition of the composition change element it means that the composition change layer 3 has been etched, and the etching process may be stopped at this time. Since the composition change layer 3 can protect the underlying semiconductor structure, by monitoring the composition of the composition change element to control the etching process, the damage to the underlying semiconductor structure caused by over-etching can be avoided, and defects caused by the etching can be reduced. , Improve the stability and reliability of the device, while reducing the process difficulty.
- the change curve of the composition of the composition change element in the composition change layer 3 in the epitaxial direction includes one or more combinations of the following change stages: periodic change, incremental change, and Decreasing change.
- the change curve of the composition change element may be composed of an increasing change stage (within the range of 0 nm to 10 nm in the epitaxial direction) and a decreasing change stage (within the range of 10 nm to 20 nm in the epitaxial direction).
- composition change mode of the composition change element in the composition change layer 3 can be adjusted according to the actual application scenario, as long as the composition monitoring process of the composition change element can grasp the etching progress of the composition change layer 3 so that when the composition changes The portion of the layer 3 that needs to be etched in the epitaxial direction can be stopped in time when the etching is completed.
- the present invention does not strictly limit the composition change mode of the composition change element in the composition change layer 3.
- the composition change layer 3 may adopt a periodic structure.
- the periodic structure includes at least one cycle sequentially superposed along the epitaxial direction, wherein each cycle includes a first In the periodic layer 31 and the second periodic layer 32, the composition change element exists only in the first periodic layer 31 or the second periodic layer 32, which can effectively prevent the component monitoring system from over-etching the underlying semiconductor structure due to the reaction delay.
- the composition change element is Al existing only in the second periodic layer 32.
- the periodic structure of the composition change layer 3 thus formed is 5nm GaN, 5nm AlGaN, 5nm GaN, 5nm AlGaN ...
- the change curve in the epitaxial direction is a “sawtooth” periodic change, as shown in FIG. 9a.
- the preset preparation thickness of each periodic layer may not remain the same.
- the first periodic layer 31 in the periodic structure of the composition change layer 3 may be 5 nm and the second periodic layer. 32 is 6nm AlGaN.
- the variation curve of the composition change element's composition in the epitaxial direction also exhibits a “sawtooth” periodic change, but the width of each “sawtooth” is wider than the area without “sawtooth”, such as Figure 9b.
- the composition of Al actually changes periodically along the epitaxial direction.
- the etching can be stopped when it is monitored that the first periodic layer 31 closest to the barrier layer 24 has been etched.
- the periodic structure formed is an L1 layer (5nm GaN), an L2 layer (5nm AlGaN), an L3 layer (5nm GaN), and an L4 layer that are sequentially stacked along the epitaxial direction. (5nm AlGaN).
- the L4 layer located on the surface of the composition change layer 3 includes an Al element.
- the etching rate can be slowed down, and the etching can be stopped after continuing to etch a thickness of 5 nm to ensure that the composition change layer 3 is in the epitaxial direction. The portion to be etched is just etched away without damaging the underlying semiconductor structure.
- the periodic structure of the composition change layer is described by taking the first periodic layer 31 as GaN and the second periodic layer 32 as AlGaN as an example, in fact, the composition change layer 3 may be composed of other III-V groups. It is composed of compounds, or may be made of other materials.
- the composition change layer 3 is a III-V compound
- the first periodic layer 31 includes at least one Group III element and at least one Group V element
- the second periodic layer 32 includes at least one Group III element and at least one V Group element
- the composition change element is a group III element or a group V element.
- the group III element may include: Al, Ga, and In; and / or, the group V element may include: N.
- the invention does not strictly limit the types of specific elements included in the composition change layer.
- the first periodic layer 31 in the periodic structure of the composition change layer 3 may be 5 nm GaN, and the second periodic layer 32 is 5 nm InGaN.
- the periodic structure formed is 5nm GaN, 5nm InGaN, 5nm GaN, 5nm superimposed in order along the epitaxial direction. InGaN.
- the preset preparation thickness of each periodic layer may not remain unchanged.
- the first periodic layer 31 in the periodic structure of the composition change layer 3 may be 5 nm and the second periodic layer 32 may be 6nm InGaN.
- the composition change layer 3 still adopts the above-mentioned periodic structure.
- the composition change element still exists only in the first periodic layer 31 or the second periodic layer 32, and the composition changes at the same time.
- the composition of the element changes monotonically, such as an increasing change or a decreasing change.
- composition change layer 3 may include two cycles:
- the first periodic layer 31 in the first period is 5 nm GaN, and the second periodic layer 32 is 5 nm
- the first periodic layer 31 in the second cycle is 5 nm GaN, and the second periodic layer 32 is 5 nm
- the composition of Al in the entire composition change layer 3 decreases along the epitaxial direction.
- Al can be used as a composition change element, and the change of the composition of Al in the epitaxial direction is still a “sawtooth” periodic change curve. But the height of each "tooth” is decreasing, as shown in Figure 10a.
- the etching process can be controlled by monitoring the composition of the element Al, for example, when the first periodic layer 31 that has been etched to the closest to the barrier layer 24 is monitored in the epitaxial direction through the composition monitoring process, It is sufficient to stop the selective etching process.
- the preset preparation thickness of the periodic layer in each cycle of the composition change layer 3 may not remain unchanged.
- the composition change layer 3 may include the following two cycles:
- the first periodic layer 31 in the first cycle is 5nmGaN, and the second periodic layer 32 is 6nmAl0.6Ga0.4N;
- the first periodic layer 31 in the second period is 5 nm GaN, and the second periodic layer 32 is 6 nm Al0.5Ga0.5N.
- a source region and a drain region on both sides of the gate region are further defined on the surface of the barrier layer 24, and the source electrode 6 is disposed in the source region and connected to the potential.
- the barrier layer 24 forms an ohmic contact
- the drain electrode 7 is disposed in the drain region and forms an ohmic contact with the barrier layer 24.
- the P-type semiconductor material 5 can be used directly as a gate electrode (as shown in FIG. 6a), or an electrode material 51 can be fabricated on the P-type semiconductor material 5 as a gate electrode (as shown in FIG. 6c).
- the source electrode 6, the drain electrode 7, and the electrode material 51 on the P-type semiconductor material 5 may be made of a metal material such as a nickel alloy, or may be made of a metal oxide or a semiconductor material. 6.
- the specific preparation materials of the drain electrode 7 and the electrode material 51 on the P-type semiconductor material 5 are not limited.
- a passivation layer 8 may be prepared on the surface of the exposed composition change layer 3, such as Figure 6d.
- the composition change layer 3 above the source region and above the drain region needs to be etched away to expose the barrier layer.
- the source and drain regions of the surface 24 are used to prepare the source electrode 6 and the drain electrode 7, and finally a semiconductor structure as shown in FIG. 6a is formed.
- the semiconductor structure may further include a semiconductor layer formed in A groove 4 extending in the gate region toward the barrier layer 24, and the p-type semiconductor material 5 fills the groove 4.
- the specific shape of the p-type semiconductor material 5 may vary according to the width of the groove 4 of the corresponding gate region.
- the middle portion of the p-type semiconductor material 5 is a T-shaped structure, when the width of the groove 4 is narrow (for example, less than 0.25um), the middle portion of the p-type semiconductor material 5 may also be
- the folded state is not limited in the present invention.
- the barrier layer 24 may also adopt a sandwich structure.
- the sandwich structure includes a first outer interlayer 241 prepared on the surface of the channel layer 23, and sandwiched between the first outer interlayer 241. And a second outer interlayer 243 between the second interlayer 243 and the second outer interlayer 243. It should be understood that the materials of the first outer interlayer 241, the intermediate layer 242 and the second outer interlayer 243 may be adjusted according to the material of the channel layer 23.
- the first outer interlayer 241 and the second outer interlayer 243 may be made of AlGaN or AlInGaN, and the intermediate layer 242 may be made of GaN.
- the content of In and Ga can vary from 0 to 1.
- the invention does not specifically limit the materials of the first outer interlayer 241, the intermediate layer 242, and the second outer interlayer 243.
- the groove 4 in FIG. 5b completely penetrates the composition change layer 3 and stays on the bottom surface of the composition change layer 3, in other embodiments of the present invention, the groove 4 may not only completely penetrate the composition change layer 3.
- a part of the barrier layer 24 is also penetrated.
- the groove 4 can penetrate to the intermediate layer 242 of the sandwich structure of the barrier layer 24. During the etching process, it acts as a stop layer to protect the first outer interlayer 241 on the surface of the channel layer 23 from being damaged by the groove etching process.
- the present invention does not strictly limit the preparation depth of the groove 4 as long as the p-type semiconductor material 5 inside the groove 4 can pinch the n-type conductive layer under the gate to realize a semiconductor structure.
- the groove 4 may only partially penetrate the composition change layer 3, and the bottom surface of the groove 4 stops inside the composition change layer 3.
- the preparation depth of the groove 4 is not strictly limited, as long as the p-type semiconductor material 5 inside the groove 4 can pinch the n-type conductive layer under the gate to realize a semiconductor structure.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (13)
- 一种半导体结构,其特征在于,包括:依次制备的沟道层以及势垒层;形成于所述势垒层上的成分变化层,所述成分变化层的表面上定义有栅极区域,所述成分变化层的材料包括至少一种成分变化元素;以及形成于所述成分变化层的所述栅极区域的p型半导体材料。
- 根据权利要求1所述的半导体结构,其特征在于,所述成分变化元素的成分在外延方向上的变化曲线包括以下变化阶段中的一种或多种组合:周期性变化、呈递增的变化、和呈递减的变化。
- 根据权利要求2所述的半导体结构,其特征在于,所述成分变化层采用周期结构,所述周期结构包括沿外延方向依次叠加的至少一个周期,其中每个所述周期包括沿外延方向依次叠加的第一周期层和第二周期层,所述成分变化元素仅存在于所述第一周期层中或第二周期层中。
- 根据权利要求3所述的半导体结构,其特征在于,所述成分变化层的材料为III-V族化合物,所述第一周期层包括至少一种III族元素和至少一种V族元素,所述第二周期层包括至少一种III族元素和至少一种V族元素;其中,所述成分变化元素为III族元素或V族元素。
- 根据权利要求4所述的半导体结构,其特征在于,所述III族元素包括:Al、Ga和In;和/或,所述V族元素包括:N。
- 根据权利要求1所述的半导体结构,其特征在于,进一步包括:形成于所述成分变化层的所述栅极区域的凹槽,其中,所述p型半导体材料填充所述凹槽。
- 根据权利要求1所述的半导体结构,其特征在于,所述p型半导体材料选自以下几种中的一种或多种:p型金刚石、p型NiO、p型GaN、p型AlGaN、p型InGaN和p型GaN/AlGaN。
- 根据权利要求1所述的半导体结构,其特征在于,所述凹槽完全贯穿所述成分变化层。
- 根据权利要求1所述的半导体结构,其特征在于,所述势垒层的表面上定义有位于所述栅极区域两侧的源极区域和漏极区域;其中,所述半导体结构进一步包括:设置于所述源极区域并与所述势垒层形成欧姆接触的源电极;以及设置于所述漏极区域并与所述势垒层形成欧姆接触的漏电极。
- 根据权利要求1所述的半导体结构,其特征在于,进一步包括:依次制备于所述沟道层下方的成核层和缓冲层。
- 一种半导体结构的制造方法,其特征在于,包括以下步骤:依次制备沟道层以及势垒层;在所述势垒层上形成成分变化层,所述成分变化层的表面上定义有栅极区域, 所述成分变化层的材料包括至少一种成分变化元素;在所述成分变化层的表面制备p型半导体材料;对所述p型半导体材料进行选择性刻蚀,保留所述栅极区域的所述p型半导体材料,并监测所述成分变化元素的成分;以及当监测到预设的变化曲线时即停止所述选择性刻蚀。
- 根据权利要求11所述的方法,其特征在于,在所述成分变化层的表面制备p型半导体材料之前,进一步包括:在所述成分变化层的所述栅极区域形成向所述势垒层延伸的凹槽;其中,所述在所述成分变化层的表面制备p型半导体材料包括:在所述成分变化层的表面制备p型半导体材料,其中,所述p型半导体材料覆盖所述成分变化层表面并填充所述凹槽。
- 根据权利要求11所述的半导体结构的制造方法,其特征在于,所述势垒层的表面上定义有位于所述栅极区域两侧的源极区域和漏极区域;其中所述方法进一步包括:刻蚀掉所述源极区域上方的半导体结构以露出所述势垒层,在所述源极区域制备与所述势垒层形成欧姆接触的源电极;以及刻蚀掉所述漏极区域上方的半导体结构以露出所述势垒层,在所述漏极区域制备与所述势垒层形成欧姆接触的漏电极。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2018/109052 WO2020062222A1 (zh) | 2018-09-30 | 2018-09-30 | 一种半导体结构及其制造方法 |
CN201880096935.0A CN112753096B (zh) | 2018-09-30 | 2018-09-30 | 一种半导体结构及其制造方法 |
US16/819,533 US11424352B2 (en) | 2018-09-30 | 2020-03-16 | Semiconductor structure and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2018/109052 WO2020062222A1 (zh) | 2018-09-30 | 2018-09-30 | 一种半导体结构及其制造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/819,533 Continuation US11424352B2 (en) | 2018-09-30 | 2020-03-16 | Semiconductor structure and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020062222A1 true WO2020062222A1 (zh) | 2020-04-02 |
Family
ID=69950235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2018/109052 WO2020062222A1 (zh) | 2018-09-30 | 2018-09-30 | 一种半导体结构及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11424352B2 (zh) |
CN (1) | CN112753096B (zh) |
WO (1) | WO2020062222A1 (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007035905A (ja) * | 2005-07-27 | 2007-02-08 | Toshiba Corp | 窒化物半導体素子 |
CN102239551A (zh) * | 2008-12-05 | 2011-11-09 | 松下电器产业株式会社 | 场效应晶体管以及其制造方法 |
CN102683394A (zh) * | 2012-04-17 | 2012-09-19 | 程凯 | 一种增强型器件及其制造方法 |
CN103943674A (zh) * | 2013-01-21 | 2014-07-23 | 台湾积体电路制造股份有限公司 | 高电子迁移率晶体管 |
CN104704637A (zh) * | 2012-04-16 | 2015-06-10 | Hrl实验室有限责任公司 | 具有分级势垒层的器件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7728356B2 (en) * | 2007-06-01 | 2010-06-01 | The Regents Of The University Of California | P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor |
FR3047608B1 (fr) * | 2016-02-04 | 2018-04-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Transistor a heterojonction a haute mobilite electronique de type normalement bloque ameliore |
-
2018
- 2018-09-30 CN CN201880096935.0A patent/CN112753096B/zh active Active
- 2018-09-30 WO PCT/CN2018/109052 patent/WO2020062222A1/zh active Application Filing
-
2020
- 2020-03-16 US US16/819,533 patent/US11424352B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007035905A (ja) * | 2005-07-27 | 2007-02-08 | Toshiba Corp | 窒化物半導体素子 |
CN102239551A (zh) * | 2008-12-05 | 2011-11-09 | 松下电器产业株式会社 | 场效应晶体管以及其制造方法 |
CN104704637A (zh) * | 2012-04-16 | 2015-06-10 | Hrl实验室有限责任公司 | 具有分级势垒层的器件 |
CN102683394A (zh) * | 2012-04-17 | 2012-09-19 | 程凯 | 一种增强型器件及其制造方法 |
CN103943674A (zh) * | 2013-01-21 | 2014-07-23 | 台湾积体电路制造股份有限公司 | 高电子迁移率晶体管 |
Also Published As
Publication number | Publication date |
---|---|
US11424352B2 (en) | 2022-08-23 |
CN112753096B (zh) | 2023-12-15 |
CN112753096A (zh) | 2021-05-04 |
US20200219998A1 (en) | 2020-07-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11699748B2 (en) | Normally-off HEMT transistor with selective generation of 2DEG channel, and manufacturing method thereof | |
JP2003059948A (ja) | 半導体装置及びその製造方法 | |
JPWO2005015642A1 (ja) | 半導体装置及びその製造方法 | |
US12080786B2 (en) | Semiconductor structure comprising p-type N-face GAN-based semiconductor layer and manufacturing method for the same | |
US10998435B2 (en) | Enhancement-mode device and method for manufacturing the same | |
TWI641133B (zh) | 半導體單元 | |
JP7052503B2 (ja) | トランジスタの製造方法 | |
TWI569439B (zh) | 半導體單元 | |
US11424353B2 (en) | Semiconductor structure and method for manufacturing the same | |
US11876129B2 (en) | Semiconductor structure and manufacturing method for the semiconductor structure | |
WO2022094966A1 (zh) | 半导体结构及其制作方法 | |
CN111755330A (zh) | 一种半导体结构及其制造方法 | |
JP2010165783A (ja) | 電界効果型トランジスタおよびその製造方法 | |
WO2020062222A1 (zh) | 一种半导体结构及其制造方法 | |
WO2021102681A1 (zh) | 半导体结构及其制作方法 | |
CN113826212B (zh) | 一种半导体结构的制备方法 | |
JP5285252B2 (ja) | 窒化物半導体装置 | |
WO2021102683A1 (zh) | 半导体结构及其制作方法 | |
CN114695115A (zh) | 一种具有鳍式结构的半导体器件及其制备方法 | |
JP2014146726A (ja) | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18935410 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18935410 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18935410 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 29/11/2021) |