WO2020057078A1 - 近场耦合驱动的微机械悬臂梁执行器及其制作方法 - Google Patents

近场耦合驱动的微机械悬臂梁执行器及其制作方法 Download PDF

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WO2020057078A1
WO2020057078A1 PCT/CN2019/079131 CN2019079131W WO2020057078A1 WO 2020057078 A1 WO2020057078 A1 WO 2020057078A1 CN 2019079131 W CN2019079131 W CN 2019079131W WO 2020057078 A1 WO2020057078 A1 WO 2020057078A1
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cantilever
inductive
dielectric layer
metal film
cantilever beam
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French (fr)
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王立峰
董蕾
黄庆安
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Southeast University
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Southeast University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers

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  • the invention relates to the field of microelectronics technology, in particular to a micromechanical cantilever beam actuator driven by near field coupling and a manufacturing method thereof.
  • the micro-actuator is one of the core components of a micro-system. It can provide power to the micro-system and can also become the operation and execution unit of the micro-system. Micro-actuators have many different execution methods. Common driving methods include electrostatic drive, electromagnetic drive, thermal drive, and light drive.
  • Electrostatic microactuators are small in size, simple in structure, and fast in response, and are currently the most widely used microactuators.
  • the output force of electrostatic actuators is much smaller than other driving forms.
  • Thermal drive is to use the thermal expansion effect to cause a certain deformation of the driving part, and to realize the output of force calmly.
  • the power consumption of thermal drive is large, and the accuracy is difficult to control.
  • Magnetically driven actuators use magnetic fields to deflect magnetic substances or conductive conductors.
  • Micromotor is a kind of magnetic driver, which can produce larger torque and higher speed.
  • Shape memory alloys can also be used to make microactuators. The shape of the shape memory alloy switches between the two states when it changes between high and low temperatures. Using this characteristic of shape memory alloys, microactuators such as micro-tweezers have been fabricated.
  • Electrically driven microactuators are mostly wired. This wired electric drive actuator is no longer applicable in confined spaces, inside the human body, and in rotating environments. For these environments, electrically driven microactuators that work wirelessly are needed.
  • the invention aims to solve at least one of the technical problems existing in the prior art, and proposes a micromechanical cantilever beam actuator driven by near field coupling and a manufacturing method thereof.
  • a first aspect of the present invention provides a micromechanical cantilever actuator driven by near-field coupling, including:
  • An insulating dielectric layer disposed on one side of the substrate in a thickness direction thereof;
  • a fixing member is disposed on a side of the insulating medium layer facing away from the substrate;
  • An inductive cantilever beam structure the inductive cantilever beam structure is connected to the fixing member, and the inductive cantilever beam structure is suspended above the insulating dielectric layer;
  • excitation inductance structure located above the inductance cantilever structure, and a near-field coupling of an electromagnetic field is formed between the excitation inductance structure and the inductance cantilever structure;
  • Two ends of the excitation inductance structure are used to connect an AC signal source.
  • a first end of the inductive cantilever beam structure is fixedly connected to the fixing member, and a second end of the inductive cantilever beam structure is suspended above the insulating dielectric layer.
  • the fixing member is located in an edge region of the insulating dielectric layer, and a second end of the inductive cantilever structure is suspended in a central region of the insulating dielectric layer.
  • the inductive cantilever structure includes a first metal film, a dielectric film, and a second metal film which are disposed in this order, the first metal film faces the insulating dielectric layer, and the second metal film faces away from the insulation.
  • a dielectric layer, and the first metal film and the second metal film constitute an LC resonance circuit.
  • the first metal film and the second metal film are two metals with large differences in thermal expansion coefficients.
  • a thermal expansion coefficient of the first metal film is greater than a thermal expansion coefficient of the second metal film.
  • a thermal expansion coefficient of the first metal film is smaller than a thermal expansion coefficient of the second metal film.
  • the signal frequency of the AC signal source is equal to the resonance frequency of the inductive cantilever structure.
  • a method for manufacturing a near-field coupling-driven micromechanical cantilever beam actuator includes the near-field coupling drive described above.
  • the manufacturing method includes:
  • Step S110 deposit an insulating dielectric layer on the surface of the substrate
  • Step S120 deposit a dielectric layer on the surface of the insulating dielectric layer, and etch to form the fixing member;
  • Step S130 apply a sacrificial layer, and perform photolithography and etching
  • Step S140 depositing and forming the inductive cantilever beam structure
  • Step S150 The sacrificial layer is etched to release the inductive cantilever beam structure.
  • step S140 specifically includes:
  • the micromechanical cantilever beam actuator of the present invention and a manufacturing method thereof include a substrate, an insulating medium layer, a fixing member, an inductive cantilever beam structure, and an exciting inductance structure.
  • the inductive cantilever beam structure is connected to the fixing member, and the inductive cantilever beam structure is suspended above the insulating dielectric layer.
  • the excitation inductance structure is located above the inductance cantilever structure, and a near-field coupling of an electromagnetic field is formed between the excitation inductance structure and the inductance cantilever structure.
  • the micromechanical cantilever actuator of the present invention works wirelessly and can work in harsh environments such as closed environments or rotating environments.
  • the micromechanical cantilever actuator of the present invention uses an on-chip integrated structure, which has a small size and fast response. And the advantages of mass production.
  • FIG. 1 is a perspective view of a micromechanical cantilever actuator in a first embodiment of the present invention
  • FIG. 2 is a front view of a micromechanical cantilever actuator in a second embodiment of the present invention.
  • FIG. 3 is a flowchart of a method for manufacturing a micromechanical cantilever actuator in a third embodiment of the present invention.
  • a first aspect of the present invention relates to a near-field coupled micromechanical cantilever actuator 100.
  • the micromechanical cantilever actuator 100 includes a substrate 110, an insulating dielectric layer 120, The fixing member 130, the inductive cantilever structure 140 and the excitation inductive structure 150.
  • the insulating dielectric layer 120 is disposed on one side of the substrate 110 in a thickness direction thereof.
  • the insulating dielectric layer 120 is disposed on an upper surface of the substrate 110.
  • the fixing member 130 is disposed on a side of the insulating medium layer 120 facing away from the substrate 110, that is, as shown in FIGS.
  • the fixing member 130 is disposed on an upper surface of the insulating medium layer 120.
  • the inductive cantilever beam structure 140 is connected to the fixing member 130, and the inductive cantilever beam structure 140 is suspended above the insulating dielectric layer 120.
  • the exciting inductor structure 150 is located above the inductive cantilever structure 140, and a near-field coupling of an electromagnetic field is formed between the exciting inductor structure 150 and the inductive cantilever structure 140. Two ends of the excitation inductance structure 150 are used to connect an AC signal source S.
  • the micromechanical cantilever actuator 100 of the structure of this embodiment includes a substrate 110, an insulating dielectric layer 120, a fixing member 130, an inductive cantilever structure 140, and an excitation inductive structure 150.
  • the inductive cantilever beam structure 140 is connected to the fixing member 130, and the inductive cantilever beam structure 140 is suspended above the insulating dielectric layer 120.
  • the exciting inductor structure 150 is located above the inductive cantilever structure 140, and a near-field coupling of an electromagnetic field is formed between the exciting inductor structure 150 and the inductive cantilever structure 140. Therefore, the micromechanical cantilever actuator 100 in this embodiment works wirelessly and can work in a closed environment or a harsh environment such as a rotating environment.
  • the micromechanical cantilever actuator 100 in the structure of this embodiment uses The on-chip integrated structure has the advantages of small size, fast response and mass production.
  • the specific distance of the inductive cantilever structure 140 suspended above the insulating dielectric layer 120 is not limited. In practical applications, the height dimension of the fixing member 130 can be set according to actual needs, so that The size of the inductive cantilever beam structure 140 from above the insulating dielectric layer 120 may be defined indirectly.
  • the specific distance between the excitation inductor structure 150 and the inductor cantilever structure 140 is not limited. In practical applications, the excitation inductor structure 150 and the inductor may be limited according to actual needs. The distance between the cantilever beam structures 140, however, the distance between the two should satisfy the near-field coupling that forms an electromagnetic field between the excitation inductive structure 150 and the inductive cantilever structure 140.
  • a first end of the inductive cantilever structure 140 is fixedly connected to the fixing member 130, and a second end of the inductive cantilever structure 140 is suspended in the insulating dielectric layer. Above 120.
  • the fixing member 130 may be located at an edge region of the insulating dielectric layer 120, and a second end of the inductive cantilever structure 140 is suspended in a central region of the insulating dielectric layer 120.
  • the inductive cantilever structure 140 includes a first metal film 141, a dielectric film 142, and a second metal film 143 disposed in this order.
  • the first metal film 141 faces the insulating dielectric layer 120.
  • the second metal film 143 faces away from the insulating dielectric layer 120, and the first metal film 141 and the second metal film 143 form an LC resonance circuit.
  • the first metal film 141 and the second metal film 143 are two metals with large differences in thermal expansion coefficients.
  • the AC signal on the excitation inductive structure 150 is wirelessly coupled to the inductive cantilever structure 140.
  • the AC signal coupled to the inductive cantilever structure 140 then generates Joule heat on the inductive cantilever structure 140.
  • the thermal expansion coefficients of the first metal film 141 and the second metal film 143 are different, when the temperature of the inductive cantilever structure 140 changes, the volume expansion amounts of the first metal film 141 and the second metal film 143 will be different.
  • the unequal volume expansion of the first metal film 141 and the second metal film 143 causes thermal stress between the first metal film 141 and the second metal film 143.
  • the thermal stress generated between the first metal film 141 and the second metal film 143 may eventually deflect the inductive cantilever structure 140.
  • the thermal expansion coefficient of the first metal film 141 is greater than the thermal expansion coefficient of the second metal film 143. In this way, when the temperature of the inductive cantilever structure 140 rises, since the thermal expansion coefficient of the first metal film 141 is greater than that of the second metal film 143, the thermal stress generated by the first metal film 141 will cause the inductive cantilever structure 140 to deflect upward.
  • the thermal expansion coefficient of the first metal film 141 is smaller than the thermal expansion coefficient of the second metal film 143. In this way, when the temperature of the inductive cantilever structure 140 rises, because the thermal expansion coefficient of the first metal film 141 is smaller than the thermal expansion coefficient of the second metal film 143, the thermal stress generated by it will cause the inductive cantilever structure 140 to deflect downward.
  • the signal frequency of the AC signal source S is equal to the resonance frequency of the inductive cantilever structure 140. This is because as long as an AC signal is loaded on the excitation inductance structure 150, the inductance cantilever structure 140 can be deflected. In order to maximize the efficiency of near-field coupling, the frequency of the loaded AC signal is the same as the LC resonance frequency of the inductive cantilever structure 140. By adjusting the amplitude of the loaded AC signal, the deflection amplitude of the inductive cantilever structure 140 can be controlled.
  • the second aspect of the present invention provides a manufacturing method S100 of a near-field coupling-driven micromechanical cantilever beam actuator.
  • the near-field coupling-driven micromechanical cantilever beam actuator includes the previously described
  • the manufacturing method includes:
  • Step S110 deposit an insulating dielectric layer on the surface of the substrate
  • Step S120 deposit a dielectric layer on the surface of the insulating dielectric layer, and etch to form the fixing member;
  • Step S130 apply a sacrificial layer, and perform photolithography and etching
  • Step S140 depositing and forming the inductive cantilever beam structure
  • Step S150 The sacrificial layer is etched to release the inductive cantilever beam structure.
  • a dielectric layer is first deposited on the surface of the substrate, and then a dielectric layer is deposited on the surface of the dielectric layer and etched.
  • the fixing member is formed, and then, a sacrificial layer is coated, and photolithography and etching are performed.
  • the inductor cantilever structure is formed by deposition.
  • the sacrificial layer is etched to release the inductor cantilever structure. Therefore, the manufactured micromechanical cantilever actuator can work wirelessly and can work in harsh environments such as closed environments or rotating environments.
  • it uses an on-chip integrated structure, which has a small size, fast response, and mass production. advantage.
  • step S140 specifically includes:
  • Photoetching and etching the first metal layer, the dielectric layer, and the second metal layer to form the inductor cantilever structure are photoetching and etching the first metal layer, the dielectric layer, and the second metal layer to form the inductor cantilever structure.

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  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
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Abstract

一种近场耦合驱动的微机械悬臂梁执行器，包括衬底（110）、绝缘介质层（120）、固定件（130）、电感悬臂梁结构（140）和激励电感结构（150），绝缘介质层（120）设置在衬底（110）沿其厚度方向的一侧；固定件（130）设置在绝缘介质层（120）背离衬底（110）的一侧；电感悬臂梁结构（140）与固定件（130）连接，并悬空在绝缘介质层（120）上方；激励电感结构（150）位于电感悬臂梁结构（140）的上方，其两端用于连接交流信号源，激励电感结构（150）与电感悬臂梁结构（140）之间形成电磁场的近场耦合。微机械悬臂梁执行器采用无线方式，能用于密闭环境或旋转环境，采用片上集成结构，具有体积小、响应快和可批量生产的优点。还提供了一种微机械悬臂梁执行器的制作方法。

Description

近场耦合驱动的微机械悬臂梁执行器及其制作方法 技术领域
本发明涉及微电子技术领域，特别涉及一种近场耦合驱动的微机械悬臂梁执行器及其制作方法。
背景技术
微执行器是微系统的核心部件之一，它可以为微系统提供动力，也可以成为微系统的操作和执行单元。微执行器有多种不同的执行方式，常见的驱动方式有静电驱动、电磁驱动、热驱动、光驱动等形式。
其中，最常用的有三种，电驱动、磁驱动和热驱动。静电微执行器体积小，结构简单，响应快，是目前应用最多的一种微执行器。但是，静电执行器的输出力与其他驱动形式相比要小得多。热驱动是利用热膨胀效应使驱动部件产生一定的形变，从容实现力的输出。热驱动的功耗较大，精度难以控制。磁驱动执行器利用磁场使磁性物质或通电导体产生偏转。微马达是一种磁驱动器，它能产生较大的力矩和较高转速。形状记忆合金也可以被用来制作微执行器。在高、低温之间变化时形状记忆合金的形状会在两种状态之间切换。利用形状记忆合金的这种特性，已经制作出微镊子等微执行器。
电驱动的微执行器绝大部分都是有线式的。这种有线的电驱动执行器在密闭空间、人体内部以及旋转环境中就不再适用。对于这些环境，需要采用无线方式工作的电驱动微执行器。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种近场耦合驱动的微机械悬臂梁执行器及其制作方法。
为了实现上述目的，本发明的第一方面，提供了一种近场耦合驱动的微机械悬臂梁执行器，包括：
衬底；
绝缘介质层，所述绝缘介质层设置在所述衬底沿其厚度方向的一侧；
固定件，所述固定件设置在所述绝缘介质层背离所述衬底的一侧；
电感悬臂梁结构，所述电感悬臂梁结构与所述固定件连接，且所述电感悬臂梁结构悬空在所述绝缘介质层上方；
激励电感结构，所述激励电感结构位于所述电感悬臂梁结构的上方，所述激励电感结构和所述电感悬臂梁结构之间形成电磁场的近场耦合；
所述激励电感结构的两端用于连接交流信号源。
可选地，所述电感悬臂梁结构的第一端与所述固定件固定连接，所述电感悬臂梁结构的第二端悬空在所述绝缘介质层的上方。
可选地，所述固定件位于所述绝缘介质层的边缘区域，所述电感悬臂梁结构的第二端悬空在所述绝缘介质层的中央区域。
可选地，所述电感悬臂梁结构包括依次设置的第一金属膜、介质膜和第二金属膜，所述第一金属膜朝向所述绝缘介质层，所述第二金属膜背离所述绝缘介质层，且所述第一金属膜与所述第二金属膜构成LC谐振回路。
可选地，所述第一金属膜和所述第二金属膜为两种热膨胀系数相差较大的金属。
可选地，所述第一金属膜的热膨胀系数大于所述第二金属膜的热膨胀系数。
可选地，所述第一金属膜的热膨胀系数小于所述第二金属膜的热膨胀系数。
可选地，所述交流信号源的信号频率与所述电感悬臂梁结构的谐振频率相等。
本发明的第二方面，提供了一种近场耦合驱动的微机械悬臂梁执行器的制作方法，所述近场耦合驱动的微机械悬臂梁执行器包括前文记载的所述的近场耦合驱动的微机械悬臂梁执行器，所述制作方法 包括：
步骤S110、在所述衬底表面沉积一层绝缘介质层；
步骤S120、在所述绝缘介质层的表面沉积一层介质层，并刻蚀形成所述固定件；
步骤S130、涂覆牺牲层，并进行光刻和刻蚀；
步骤S140、沉积形成所述电感悬臂梁结构；
步骤S150、腐蚀牺牲层，释放所述电感悬臂梁结构。
可选地，步骤S140具体包括：
依次在所述绝缘介质层的表面沉积第一金属层、介质层和第二金属层；
对所述第一金属层、介质层和第二金属层进行光刻并刻蚀，形成所述电感悬臂梁结构。。
本发明的微机械悬臂梁执行器及其制作方法，包括衬底、绝缘介质层、固定件、电感悬臂梁结构和激励电感结构。所述电感悬臂梁结构与所述固定件连接，且所述电感悬臂梁结构悬空在所述绝缘介质层上方。所述激励电感结构位于所述电感悬臂梁结构的上方，所述激励电感结构和所述电感悬臂梁结构之间形成电磁场的近场耦合。本发明的微机械悬臂梁执行器采用无线方式工作，能在密闭环境或旋转环境等恶劣环境中工作，此外，本发明的微机械悬臂梁执行器，采用片上集成结构，具有体积小、响应快和可批量生产的优点。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1为本发明第一实施例中微机械悬臂梁执行器的立体图；
图2为本发明第二实施例中微机械悬臂梁执行器的主视图；
图3为本发明第三实施例中微机械悬臂梁执行器的制作方法的流程图。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
如图1和图2所示，本发明的第一方面，涉及一种近场耦合驱动的微机械悬臂梁执行器100，该微机械悬臂梁执行器100包括衬底110、绝缘介质层120、固定件130、电感悬臂梁结构140和激励电感结构150。其中，所述绝缘介质层120设置在所述衬底110沿其厚度方向的一侧，例如，如图1和图2所述，该绝缘介质层120设置在所述衬底110的上表面。所述固定件130设置在所述绝缘介质层120背离所述衬底110的一侧，也就是说，如图1和图2所示，固定件130设置在所述绝缘介质层120的上表面。所述电感悬臂梁结构140与所述固定件130连接，且所述电感悬臂梁结构140悬空在所述绝缘介质层120上方。所述激励电感结构150位于所述电感悬臂梁结构140的上方，所述激励电感结构150和所述电感悬臂梁结构140之间形成电磁场的近场耦合。所述激励电感结构150的两端用于连接交流信号源S。
本实施例结构的微机械悬臂梁执行器100，其包括衬底110、绝缘介质层120、固定件130、电感悬臂梁结构140和激励电感结构150。所述电感悬臂梁结构140与所述固定件130连接，且所述电感悬臂梁结构140悬空在所述绝缘介质层120上方。所述激励电感结构150位于所述电感悬臂梁结构140的上方，所述激励电感结构150和所述电感悬臂梁结构140之间形成电磁场的近场耦合。因此，本实施例中的微机械悬臂梁执行器100，其采用无线方式工作，能在密闭环境或旋转环境等恶劣环境中工作，此外，本实施例结构的微机械悬臂梁执行器100，采用片上集成结构，具有体积小、响应快和可批量生产的优点。
需要说明的是，对于所述电感悬臂梁结构140悬空在所述绝缘介质层120上方的具体距离并没有作出限定，在实际应用时，可以根据实际需要，设定固定件130的高度尺寸，从而可以间接地限定电感 悬臂梁结构140距离绝缘介质层120上方的尺寸。
进一步需要说明的是，对于所述激励电感结构150位于所述电感悬臂梁结构140的上方的具体距离也没有作出限定，在实际应用时，可以根据实际需要，限定激励电感结构150与所述电感悬臂梁结构140之间的距离，但是，两者之间的距离应当满足所述激励电感结构150和所述电感悬臂梁结构140之间形成电磁场的近场耦合。
具体地，如图1和图2所示，所述电感悬臂梁结构140的第一端与所述固定件130固定连接，所述电感悬臂梁结构140的第二端悬空在所述绝缘介质层120的上方。
如图1和图2所示，所述固定件130可以位于所述绝缘介质层120的边缘区域，所述电感悬臂梁结构140的第二端悬空在所述绝缘介质层120的中央区域。
如图1和图2所示，所述电感悬臂梁结构140包括依次设置的第一金属膜141、介质膜142和第二金属膜143，所述第一金属膜141朝向所述绝缘介质层120，所述第二金属膜143背离所述绝缘介质层120，且所述第一金属膜141与所述第二金属膜143构成LC谐振回路。
可选地，所述第一金属膜141和所述第二金属膜143为两种热膨胀系数相差较大的金属。
具体地，由于近场耦合原理，激励电感结构150上的交流信号会无线地耦合到电感悬臂梁结构140上。然后，耦合到电感悬臂梁结构140上的交流信号会在电感悬臂梁结构140上产生焦耳热。由于第一金属膜141和第二金属膜143的热膨胀系数不同，当电感悬臂梁结构140温度发生变化时，第一金属膜141和第二金属膜143的体积膨胀量将会不相等。第一金属膜141和第二金属膜143的体积膨胀量不相等会导致第一金属膜141和第二金属膜143之间产生热应力。第一金属膜141和第二金属膜143之间产生的热应力最终会使电感悬臂梁结构140发生偏转。
具体地，所述第一金属膜141的热膨胀系数大于所述第二金属膜143的热膨胀系数。这样，当电感悬臂梁结构140的温度升高时， 由于第一金属膜141的热膨胀系数大于第二金属膜143，其产生的热应力将导致电感悬臂梁结构140向上偏转。
具体他，所述第一金属膜141的热膨胀系数小于所述第二金属膜143的热膨胀系数。这样，当电感悬臂梁结构140温度升高时，由于第一金属膜141的热膨胀系数小于所述第二金属膜143的热膨胀系数，其产生的热应力将导致电感悬臂梁结构140向下偏转。
如图1和图2所示，所述交流信号源S的信号频率与所述电感悬臂梁结构140的谐振频率相等。这是因为，只要在激励电感结构150上加载交流信号，就可以使电感悬臂梁结构140产生偏转。为了使近场耦合的效率最大，加载的交流信号的频率与电感悬臂梁结构140的LC谐振频率相同。通过调节加载的交流信号的幅度，可以控制电感悬臂梁结构140的偏转幅度。
本发明的第二方面，如图3所示，提供了一种近场耦合驱动的微机械悬臂梁执行器的制作方法S100，所述近场耦合驱动的微机械悬臂梁执行器包括前文记载的所述的近场耦合驱动的微机械悬臂梁执行器，具体地可以参考前文相关记载，在此不作赘述。所述制作方法包括：
步骤S110、在所述衬底表面沉积一层绝缘介质层；
步骤S120、在所述绝缘介质层的表面沉积一层介质层，并刻蚀形成所述固定件；
步骤S130、涂覆牺牲层，并进行光刻和刻蚀；
步骤S140、沉积形成所述电感悬臂梁结构；
步骤S150、腐蚀牺牲层，释放所述电感悬臂梁结构。
本实施例结构的微机械悬臂梁执行器的制作方法S100，其首先在所述衬底表面沉积一层绝缘介质层，之后，在所述绝缘介质层的表面沉积一层介质层，并刻蚀形成所述固定件，然后，涂覆牺牲层，并进行光刻和刻蚀，之后，沉积形成所述电感悬臂梁结构，最后，腐蚀牺牲层，释放所述电感悬臂梁结构。因此，制作形成的微机械悬臂梁执行器，其可以采用无线方式工作，能在密闭环境或旋转环境等恶劣环境中工作，此外，采用片上集成结构，具有体积小、响应快和可批 量生产的优点。
可选地，步骤S140具体包括：
依次在所述绝缘介质层的表面沉积第一金属层、介质层和第二金属层；
对所述第一金属层、介质层和第二金属层进行光刻并刻蚀，形成所述电感悬臂梁结构。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

  1. 一种近场耦合驱动的微机械悬臂梁执行器，其特征在于，包括：
    衬底；
    绝缘介质层，所述绝缘介质层设置在所述衬底沿其厚度方向的一侧；
    固定件，所述固定件设置在所述绝缘介质层背离所述衬底的一侧；
    电感悬臂梁结构，所述电感悬臂梁结构与所述固定件连接，且所述电感悬臂梁结构悬空在所述绝缘介质层上方；
    激励电感结构，所述激励电感结构位于所述电感悬臂梁结构的上方，所述激励电感结构和所述电感悬臂梁结构之间形成电磁场的近场耦合；
    所述激励电感结构的两端用于连接交流信号源。
  2. 根据权利要求1所述的微机械悬臂梁执行器，其特征在于，所述电感悬臂梁结构的第一端与所述固定件固定连接，所述电感悬臂梁结构的第二端悬空在所述绝缘介质层的上方。
  3. 根据权利要求2所述的微机械悬臂梁执行器，其特征在于，所述固定件位于所述绝缘介质层的边缘区域，所述电感悬臂梁结构的第二端悬空在所述绝缘介质层的中央区域。
  4. 根据权利要求1所述的微机械悬臂梁执行器，其特征在于，所述电感悬臂梁结构包括依次设置的第一金属膜、介质膜和第二金属膜，所述第一金属膜朝向所述绝缘介质层，所述第二金属膜背离所述绝缘介质层，且所述第一金属膜与所述第二金属膜构成LC谐振回路。
  5. 根据权利要求4所述的微机械悬臂梁执行器，其特征在于， 所述第一金属膜和所述第二金属膜为两种热膨胀系数相差较大的金属。
  6. 根据权利要求5所述的微机械悬臂梁执行器，其特征在于，所述第一金属膜的热膨胀系数大于所述第二金属膜的热膨胀系数。
  7. 根据权利要求5所述的微机械悬臂梁执行器，其特征在于，所述第一金属膜的热膨胀系数小于所述第二金属膜的热膨胀系数。
  8. 根据权利要求1至7中任意一项所述的微机械悬臂梁执行器，其特征在于，所述交流信号源的信号频率与所述电感悬臂梁结构的谐振频率相等。
  9. 一种近场耦合驱动的微机械悬臂梁执行器的制作方法，其特征在于，所述近场耦合驱动的微机械悬臂梁执行器包括权利要求1至9中任意一项所述的近场耦合驱动的微机械悬臂梁执行器，所述制作方法包括：
    步骤S110、在所述衬底表面沉积一层绝缘介质层；
    步骤S120、在所述绝缘介质层的表面沉积一层介质层，并刻蚀形成所述固定件；
    步骤S130、涂覆牺牲层，并进行光刻和刻蚀；
    步骤S140、沉积形成所述电感悬臂梁结构；
    步骤S150、腐蚀牺牲层，释放所述电感悬臂梁结构。
  10. 根据权利要求9所述的制作方法，其特征在于，步骤S140具体包括：
    依次在所述绝缘介质层的表面沉积第一金属层、介质层和第二金属层；
    对所述第一金属层、介质层和第二金属层进行光刻并刻蚀，形成所述电感悬臂梁结构。
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