WO2020056610A1 - Storage apparatus and electronic device - Google Patents

Storage apparatus and electronic device Download PDF

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Publication number
WO2020056610A1
WO2020056610A1 PCT/CN2018/106340 CN2018106340W WO2020056610A1 WO 2020056610 A1 WO2020056610 A1 WO 2020056610A1 CN 2018106340 W CN2018106340 W CN 2018106340W WO 2020056610 A1 WO2020056610 A1 WO 2020056610A1
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WIPO (PCT)
Prior art keywords
memory
controller
storage device
data
interface
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PCT/CN2018/106340
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French (fr)
Chinese (zh)
Inventor
肖勇军
孔飞
耿剑锋
何彪
夏邓伟
张广宇
Original Assignee
华为技术有限公司
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to CN201880083554.9A priority Critical patent/CN111512294A/en
Priority to PCT/CN2018/106340 priority patent/WO2020056610A1/en
Publication of WO2020056610A1 publication Critical patent/WO2020056610A1/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38Information transfer, e.g. on bus

Definitions

  • the present application relates to the field of information storage technologies, and in particular, to a storage device and an electronic device.
  • the data storage medium may generally include two types of random access memory (Random Access Memory, RAM) and read-only memory (Read-Only Memory, ROM).
  • RAM Random Access Memory
  • ROM Read-Only Memory
  • RAM has the characteristics of fast access speed, but data loss (volatile) at power-down, such as Double Rate (DDR) Synchronous Dynamic RAM (referred to as DDR SDRAM)
  • DDR SDRAM Double Rate Synchronous Dynamic RAM
  • ROM has power-down Features that do not lose data (non-volatile), but have slow access speeds, such as NAND flash memory.
  • Non-Volatile Random Access Memory which combines the priority of RAM and RAM, has the characteristics of fast access speed and power loss data is not lost, such as resistive RAM (Resistive RAM, ReRAM), Ferromagnetic RAM (FRAM), Magnetic RAM (Magnetic RAM, MRAM), etc.
  • hybrid storage in electronic devices, such as mobile terminals, that is, different types of data storage media are deployed in one hybrid storage.
  • hybrid memory that includes DDR, SDRAM, NAND, and NVRAM in mobile terminals.
  • Embodiments of the present application provide a storage device and an electronic device, which are used to perform efficient data migration between different memories packaged in the storage device.
  • a storage device includes: a package, a first storage, a second storage, and a third storage; and the controller is coupled to the first storage, the second storage, and the third storage, and is used for Data is migrated between at least two of the memory, the second memory, and the third memory; the first memory, the second memory, and the third memory are different types of memory; the package is used to encapsulate the first memory, the second memory, Third memory and controller.
  • the controller can migrate data between at least two memories of the first memory, the second memory, and the third memory packaged in the same package, and it is not necessary to transfer the data to the outside of the storage device when the data is migrated. The efficiency is improved, and the storage device is small in size and low in cost.
  • the first memory is a non-volatile random access memory (Non-Volatile Random Access Memory, NVRAM), and the second memory is a NAND flash memory.
  • the third memory is a double rate (Double Data Rate, DDR) synchronous dynamic random access memory (Synchronous Dynamic Random Access Memory, SDRAM), which is referred to as DDR SDRAM for short.
  • DDR SDRAM synchronous dynamic random access memory
  • the storage device using the technical solution is a hybrid storage, which integrates different types of storage.
  • the apparatus further includes: a bus and a processor, the processor, the controller, the first memory, the second memory, and the third memory are coupled to the bus, and the package is also used for packaging A bus and a processor; the controller is further configured to obtain a bus control right from the processor and use the bus to migrate data between the at least two memories; the processor is configured to grant the bus control right to the controller.
  • the controller can use the bus to perform efficient data migration between different storage media.
  • the controller is further configured to receive an operation on the migration data from at least one of the at least two memories before migrating the data between the at least two memories. request.
  • the controller can perform efficient data migration between different storage media based on an operation request of at least one memory.
  • the controller is further configured to send a response agreeing to the operation request to the at least one memory.
  • the controller can notify the at least one memory after acquiring the bus control authority.
  • the processor is further configured to release the bus control authority of the controller after the controller completes the migration data.
  • the processor by releasing the bus control authority of the controller in time, the problem that the controller controls the bus for a long time and affects related operations of the processor can be avoided.
  • the apparatus further includes: an interface coupled to the controller, configured to couple the first memory, the second memory, and the third memory to an outside of the package of the storage device. Processing equipment.
  • a coupling manner of the storage device and a processing device is provided.
  • the interface includes at least two interfaces.
  • a coupling manner of the storage device and a processing device is provided.
  • any one of the at least two interfaces is: a peripheral component interconnect standard PCIe interface, a double-rate synchronous dynamic random access memory DDR SDRAM interface, or a universal flash storage UFS interface .
  • a peripheral component interconnect standard PCIe interface a double-rate synchronous dynamic random access memory DDR SDRAM interface
  • a universal flash storage UFS interface a universal flash storage UFS interface
  • the package includes a chip package.
  • the storage device includes one or more chip particles such that the first memory, the second memory, the third memory, the controller, the bus, and the processor are located on the one or more chip particles.
  • the package encapsulates one or more chip particles to form the storage device, and realizes miniaturization of the storage device.
  • an electronic device includes a storage device and a processing device.
  • the storage device may be the storage device provided by the foregoing first aspect or any possible implementation manner of the first aspect.
  • the processing device is a system-on-chip (SoC).
  • the controller in the storage device can migrate data between at least two memories of the first memory, the second memory, and the third memory that are packaged in the same package, thereby achieving the implementation of different memories. Efficient data migration between storage media. At the same time, no external processing equipment is required to participate in the entire data migration process, thereby reducing the power consumption of the electronic device during data migration and improving the performance of the electronic device.
  • FIG. 1 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
  • FIG. 2 is a first schematic structural diagram of a storage device according to an embodiment of the present application.
  • FIG. 3 is a schematic flowchart of migrating data according to an embodiment of the present application.
  • FIG. 4 is a second schematic structural diagram of a storage device according to an embodiment of the present application.
  • FIG. 5 is a third structural schematic diagram of a storage device according to an embodiment of the present application.
  • FIG. 6 is a fourth structural schematic diagram of a storage device according to an embodiment of the present application.
  • At least one means one or more, and “multiple” means two or more.
  • “And / or” describes the association relationship of related objects, and indicates that there can be three kinds of relationships, for example, A and / or B can represent: the case where A exists alone, A and B exist simultaneously, and B alone exists, where A, B can be singular or plural.
  • “At least one or more of the following” or similar expressions refers to any combination of these items, including any combination of single or plural items.
  • at least one (a), a, b, or c may represent: a, b, c, a-b, a-c, b-c, or a-b-c, where a, b, and c may be single or multiple.
  • the words “first”, “second” and the like do not limit the number and execution order.
  • FIG. 1 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
  • the electronic device may be a mobile phone, a tablet computer, a video camera, a camera, a wearable device, a vehicle-mounted device, or a portable device.
  • the above-mentioned devices are collectively referred to as electronic devices in this application.
  • the embodiment of the present application uses the electronic device as a mobile phone as an example for description.
  • the mobile phone includes a system on chip (SoC) 101 and a hybrid memory 102 coupled to the SoC 101.
  • SoC system on chip
  • SoC 101 is the control center of the mobile phone. It uses various interfaces and lines to connect various parts of the entire device. It runs or executes software programs and / or software modules stored in the hybrid memory, and calls data stored in the hybrid memory. , Perform various functions of the mobile phone and process data, so as to monitor the mobile phone as a whole.
  • the SoC 101 may include a central processing unit, other types of general-purpose processors, such as digital signal processors, artificial intelligence processors, microcontrollers, or microprocessors.
  • the SoC 101 may further include a graphics processor (Graphic Processing Unit, GPU), an image signal processor (Image Signal Processor, ISP), or a voice processor. SoC 101 may further include other hardware circuits or accelerators, such as application specific integrated circuits, field programmable gate arrays or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof.
  • the hybrid memory 102 may include different types of memory, and the SoC 101 may be used to access any type of memory or storage medium in the hybrid memory 102.
  • the hybrid memory 102 in FIG. 1 includes a double-rate (Double Data Rate, DDR) synchronous dynamic random access memory (Synchronous Dynamic RAM (SDRAM) (DDR SDRAM for short), NVRAM and NAND flash memory, and DDR SDRAM, As an example, NVRAM and NAND flash memory are integrated together.
  • the hybrid memory 102 in FIG. 1 incorporates different types of memory, such as DDR SDRAM, NVRAM, and NAND flash memory, and may further include other types of storage.
  • memory such as DDR SDRAM, NVRAM, and NAND flash memory
  • At least one of the memories 102 or a storage medium therein may be used to store data, software programs, and modules.
  • any memory may include a storage program area and a storage data area, where the storage program area may store a software program, including instructions formed in code, including but not limited to an operating system, and applications required for at least one function, such as sound Playback function, image playback function, etc .;
  • the storage data area can store data created according to the use of the mobile phone, such as audio data, image data, phonebook, etc.
  • the mobile phone may further include a sensor component 103, a multimedia component 104, an input / output interface 105, and the like.
  • a sensor component 103 may further include a sensor component 103, a multimedia component 104, an input / output interface 105, and the like.
  • the sensor component 103 includes one or more sensors, which are used to provide various aspects of status assessment for the mobile phone.
  • the sensor component 103 may include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications, that is, to become a component of a camera or a camera.
  • the sensor component 103 may further include an acceleration sensor, a gyroscope sensor, a magnetic sensor, a pressure sensor or a temperature sensor.
  • the sensor component 103 can detect the acceleration / deceleration, orientation, open / close state of the mobile phone, relative positioning of the component, or Cell phone temperature changes, etc.
  • the multimedia component 104 provides a screen as an output interface between the mobile phone and the user.
  • the screen can be a display panel or a touch panel.
  • the screen can be implemented as a touch screen to receive input signals from the user.
  • the touch panel includes one or more touch sensors to sense touch, swipe, and gestures on the touch panel.
  • the touch sensor may not only sense a boundary of a touch or slide action, but also detect duration and pressure related to the touch or slide operation.
  • the multimedia component 104 further includes at least one camera.
  • the multimedia component 104 includes a front camera and / or a rear camera.
  • the front camera and / or the rear camera can sense an external multimedia signal, which is used to form an image frame.
  • Each front camera and rear camera can be a fixed optical lens system or have focal length and optical zoom capabilities.
  • the input / output interface 105 provides an interface between the SoC 101 and a peripheral interface module.
  • the peripheral interface module may include a keyboard, a mouse, or a USB (Universal Serial Bus) device.
  • the input ⁇ output interface 105 may have only one input ⁇ output interface, or may have multiple input ⁇ output interfaces.
  • the mobile phone may further include an audio component and a communication component, for example, the audio component includes a microphone, and the communication component includes a wireless fidelity (WiFi) module, a Bluetooth module, and the like, which are not described in the embodiment of this application.
  • WiFi wireless fidelity
  • Bluetooth Bluetooth module
  • FIG. 1 does not constitute a limitation on the mobile phone, and may include more or fewer parts than those shown in the figure, or combine certain parts, or arrange different parts. It can be understood that all the components shown in FIG. 1 may be located on the same circuit board, which is not limited in this embodiment.
  • FIG. 2 is a schematic structural diagram of a storage device provided by an embodiment of the present application.
  • the device corresponds to the hybrid memory 102 and includes a package 201, a first memory 202, a second memory 203, The third memory 204, the controller 205, the processor 206, and the bus 207.
  • the first memory 202, the second memory 203, the third memory 204, the controller 205, and the processor 206 are coupled to the bus 207.
  • the embodiment corresponding to FIG. 2 takes three memories in the storage device as an example. In fact, the storage device may include a larger number of memories. The types of these memories are usually different to form a hybrid memory.
  • This embodiment The introduction includes only the first memory 202, the second memory 203, and the third memory 204 as an example, but it is not limited.
  • the controller 205 is configured to migrate data between at least two memories among the first memory 202, the second memory 203, and the third memory 204.
  • the migration data between the first memory 202 and the second memory 203 includes at least one of the following:
  • the memory 202 migrates data to or from the second memory 203.
  • the package 201 is used to package the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207. Due to the existence of the package 201, the storage device has a small size, low cost, and can achieve better performance. When performing the data migration, the data does not need to be transferred to the outside of the storage device, that is, it is completed within the package, and the efficiency is high.
  • the controller 205 is a direct memory access (DMA) device.
  • DMA direct memory access
  • the package 201 mentioned in this embodiment may be a chip package for packaging one or more chip particles.
  • the storage device includes the one or more chips, such that the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207 are located in the one or more Chips on the chip.
  • the package 201 encapsulates the one or more chip particles to form the storage device, thereby achieving miniaturization of the storage device.
  • the specific technology used for chip packaging may be selected from existing packaging technologies, which is not limited in this embodiment. Since the storage device exists as a whole, the internal data migration does not depend on the outside, and the efficiency is high.
  • the package 201 wraps the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207, which can well implement dustproof, waterproof, or antistatic, so that the storage device As a separate device located on the circuit board.
  • the first memory 202, the second memory 203, and the third memory 204 are different types of memories.
  • the first memory 202 is a non-volatile random access memory (Non-Volatile Random Access Memory, NVRAM)
  • the second memory 203 is a NAND flash memory
  • the third memory 204 is a double-rate synchronous dynamic Random access memory DDR SDRAM.
  • Any one of the first memory 202, the second memory 203, and the third memory 204 may include a storage medium, and may further include necessary circuits, such as a control circuit for reading and writing to the storage medium, such as an addressing circuit. Examples do not limit this. Different types of memories have different types of storage media, and may also have different types of control circuits.
  • the controller 204 is used to migrate data from the first memory 202 to the second memory 203 as an example.
  • the controller 204 is used for at least two memories among the first memory 202, the second memory 203, and the third memory 204.
  • Inter-migration data is exemplified.
  • the specific process in which the controller 205 migrates data from the first memory 202 to the second memory 203 may include: 1.
  • the first memory 202 sends an operation request to the controller 205, where the operation request is used to request that the first memory 202 Data is transferred to the second memory 203; 2.
  • the controller 205 may obtain the bus control authority from the processor 206, for example, the controller 205 sends the processor 206 to request the bus The bus control request that controls the authority; 3.
  • the processor 206 grants the bus control authority to the controller 205, for example, the processor 206 sends a response to the controller 205 that agrees with the above bus control request; 4.
  • the bus control authority is obtained at the controller 205 After that, the controller 205 may send a response agreeing to the operation request to the first memory 202; 5.
  • the controller 205 uses the bus 207 to migrate the data in the first memory to the second memory, for example, the controller 205 enables the first The read channel of the memory 202 to use the bus to read data from the first memory.
  • the first memory 202 can System 205 transmits a data reading end response.
  • the controller 205 enables the write channel of the second memory 203 to use the bus to write the read data into the second memory.
  • the second memory 203 can send the data write to the controller 205 End response.
  • the processor 206 may also release the bus control authority of the controller 205.
  • FIG. 3 is an example in which the bus 207 includes a data bus and an address bus as shown in FIG. 3, and each of the NVRAM and the NAND flash memory corresponds to one R_EN and W_EN.
  • the specific process of the controller 205 migrating data from the second memory 203 to the first memory 202 is similar to the specific process of the controller 205 migrating data from the first memory 202 to the second memory 203.
  • the specific process of the controller 204 migrating data between at least two memories of the first memory 202, the second memory 203, and the third memory 204 and the above-mentioned process of migrating data between the first memory 202 and the second memory 203 The specific process is also similar.
  • at least two memories can be transmitted in both directions simultaneously or only in one direction, which is not limited in this embodiment.
  • the first storage 202 and the second storage 203 may also use the same type of storage medium, and the controller 205 may also use the same type of storage medium between the two types of storage media.
  • the first storage 202 and the second storage 203 use different types of storage media, which is a more common choice.
  • the two memories are the same memory. Therefore, the storage device including the two memories is a non-hybrid memory, but still can achieve similar functions.
  • migrating data between two memories it is still not necessary to transfer the data to the outside of the storage device, and efficiency can be improved.
  • the device further includes an interface 208 coupled to the controller 205, for coupling the first memory 202, the second memory 203, and the second memory 204 to a processing device located outside the package 201 of the storage device.
  • the interface 208 may include: at least two interfaces.
  • any one of the at least two interfaces is: Peripheral Component Interconnect Standard (PCIe) interface, double-rate synchronous dynamic random access memory DDR SDRAM interface, or universal flash storage (Universal Flash Storage (UFS) interface.
  • PCIe Peripheral Component Interconnect Standard
  • DDR SDRAM double-rate synchronous dynamic random access memory
  • UFS Universal Flash Storage
  • the interface 208 includes a UFS interface and a DDR SDRAM interface.
  • the DDR SDRAM interface is used to couple the first memory 202 and the third memory 204 to the outside of the package 201 of the storage device.
  • the UFS interface is used to couple the second memory 203 to a processing device located outside the package 201 of the storage device.
  • the processing device may be the SoC 101 shown in FIG. 1 or a circuit motherboard including the SoC 101. That is, the controller 205 can transmit the data of the first memory 202 or the third memory 204 with the processing device through the DDR SDRAM interface and the data of the second memory 203 with the processing device through the UFS interface.
  • the data can include reading Fetched data and written data.
  • the interface 208 includes a PCIe interface, a UFS interface, and a DDR SDRAM interface.
  • the PCIe interface is used to couple the first memory 202 to a processing device outside the package 201, that is, to control.
  • the processor 205 can transmit the data of the first memory 202 to the processing device through the PCIe interface; the UFS interface is used to couple the second memory 203 to the processing device outside the package 201, that is, the controller 205 can communicate with the processing device through the UFS interface The data of the second memory 203 is transmitted; the DDR SDRAM interface is used to couple the third memory 204 to a processing device outside the package 201, that is, the controller 205 can transmit the data of the third memory 204 to the processing device through the DDR SDRAM interface.
  • the interface 208 includes only a PCIe interface, a UFS interface, and / or a DDR SDRAM interface as an example for description.
  • the interface 208 may also include an embedded multimedia controller (Embedded MultiMedia Card, eMMC).
  • eMMC embedded MultiMedia Card
  • the interface and the like may be used to couple the eMMC memory located in the hybrid memory to the processing device, which is not specifically limited in the embodiment of the present application.
  • the types of interfaces mentioned in this embodiment are also extensible and are not necessarily limited to the types listed in this embodiment.
  • the controller 205 can migrate data between at least two memories of the first memory 202, the second memory 203, and the third memory 204 packaged in the same package, thereby achieving Efficient data migration between different storage media.
  • the controller 205 is a DMA device, and is configured to implement the data migration instead of the DMA device in the SoC101.
  • the DMA device built in the storage device makes it unnecessary to transfer the data to the outside of the storage device when migrating data, which improves efficiency.
  • the entire data migration process does not require the participation of the processing device, thereby reducing the power consumption of the electronic device during data migration and improving the performance of the electronic device.
  • a storage device is further provided.
  • the storage device includes: a package 301, a first memory 302, a second memory 303, a third memory 304, and a first memory coupled to the first memory.
  • the first memory 302, the second memory 303, the third memory 304, the first controller 305, the second controller 306, the third controller 307, and the processor 308 are coupled to the bus 309.
  • the package 301 is used to package the first memory 302, the second memory 303, the third memory 304, the first controller 305, the second controller 306, the third controller 307, the processor 308, and the bus. 309.
  • the first memory 302, the second memory 303, and the third memory 304 may be different types of memories.
  • the first memory 302 may be NVRAM
  • the second memory 303 may be a NAND flash memory.
  • the third memory 304 is DDR SDRAM, but it is not used for limitation.
  • the storage device may include more other types of memory.
  • the storage device further includes: a first interface 310 coupled to the first controller 305, for coupling the first memory 302 to a processing device located outside the package 301 of the storage device; and coupled to the second controller A second interface 311 of 306 is used for coupling the second memory 303 to a processing device located outside the package 301 of the storage device; and a third interface 312 of the third controller 307 is used for coupling the third memory 304 To processing equipment located outside the package 301 of the storage device.
  • the first interface 310 may include a PCIe interface, that is, the first controller 305 may transmit data of the first memory 302 to the processing device through the PCIe interface;
  • the second interface 311 may include a UFS interface, that is, the second controller 306 may The data of the second memory 303 is transmitted to the processing device through the UFS interface;
  • the third interface 312 may include a DDR SDRAM interface, that is, the third controller 307 may transmit data of the third memory 304 to the processing device through the DDR SDRAM interface.
  • the PCIe interface, UFS interface, and / or DDR SDRAM interface are used as examples for illustration. In practical applications, the first interface, the second interface, and the third interface may also include other interfaces. Examples do not specifically limit this.
  • An embodiment of the present application further provides an electronic device.
  • the electronic device may include a storage device and a processing device according to the foregoing embodiments.
  • the storage device may be as shown in the foregoing FIG. 2, FIG. 4, FIG. 5, or FIG. 6.
  • the processing device may be a system-on-chip SoC 101. Specifically, a schematic structural diagram of the electronic device may be shown in FIG. 1.
  • the storage device of this embodiment includes built-in different types of memories or storage media, and internally transfers data between different memories.
  • different memories may include NVRAM, NAND flash memory, and DDR SDRAM.
  • NVRAM generally has a small storage capacity, while NAND flash memory has a larger capacity, and NVRAM can be used as a data cache for NAND flash memory to achieve good performance.
  • the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207 may be located on one chip. To form a whole.
  • these components may be located in different multiple chip particles, but are packaged in a package, and the advantages of miniaturization of the device can still be achieved.
  • the first memory 202, the second memory 203, and the third memory 204 are different types of memories, they may be located on different chip particles.
  • the controller 205, the processor 206, and the bus 207 may be located on another independent chip particle to implement a control function.
  • the controller 205 may be a DMA device, which is built into the storage device and becomes a part of the storage device for the data migration. Therefore, data migration does not need to go through external equipment, for example, DMA equipment in SoC 101 is not required to participate.

Abstract

A storage apparatus and an electronic device, for implementing highly efficient data migration between storage media of different memories. The apparatus comprises: a package (201), a first memory (202), a second memory (203), a third memory (204), and a controller (205). The controller (205) is coupled to the first memory (202), the second memory (203), and the third memory (204), and is used for implementing data migration between at least two memories in the first memory (202), the second memory (203), and the third memory (204); the first memory (202), the second memory (203), and the third memory (204) are memories of different types; the package (201) is used for packaging the first memory (202), the second memory (203), the third memory (204), and the controller (205).

Description

一种存储装置及电子设备Storage device and electronic equipment 技术领域Technical field
本申请涉及信息存储技术领域,尤其涉及一种存储装置及电子设备。The present application relates to the field of information storage technologies, and in particular, to a storage device and an electronic device.
背景技术Background technique
数据存储介质通常可以包括随机访问存储器(Random Access Memory,RAM)和只读存储器(Read-Only Memory,ROM)两种类型。其中,RAM具有访问速度快、但掉电数据丢失(易失性)的特点,比如双倍速率(Double Data Rate,DDR)的同步动态(Synchronous Dynamic)RAM(简称DDR SDRAM);ROM具有掉电数据不丢失(非易失性)、但是访问速度慢的特点,比如NAND闪存存储器。目前,又出现了一种非易失性随机访问存储器(Non-Volatile Random Access Memory,NVRAM),其结合了RAM和RAM的优先,具有访问速度快且掉电数据不丢失的特点,比如电阻式RAM(Resistive RAM,ReRAM)、铁电RAM(Ferromagnetic RAM,FRAM)、磁性RAM(Magnetic RAM,MRAM)等。The data storage medium may generally include two types of random access memory (Random Access Memory, RAM) and read-only memory (Read-Only Memory, ROM). Among them, RAM has the characteristics of fast access speed, but data loss (volatile) at power-down, such as Double Rate (DDR) Synchronous Dynamic RAM (referred to as DDR SDRAM); ROM has power-down Features that do not lose data (non-volatile), but have slow access speeds, such as NAND flash memory. At present, there is a non-volatile random access memory (Non-Volatile Random Access Memory, NVRAM), which combines the priority of RAM and RAM, has the characteristics of fast access speed and power loss data is not lost, such as resistive RAM (Resistive RAM, ReRAM), Ferromagnetic RAM (FRAM), Magnetic RAM (Magnetic RAM, MRAM), etc.
在实际应用中,考虑到不同存储器的存储介质的特点、尺寸和价格等因素,通常需要在电子设备,如移动终端中部署混合存储器,即将不同类型的数据存储介质部署在一个混合存储器中。比如,在移动终端中部署同时包括DDR SDRAM、NAND和NVRAM的混合存储器等。当在移动终端中部署混合存储器时,会存在混合存储器的不同存储介质之间数据迁移的需求。如何在不同存储介质进行高效率的数据迁移就成为一个问题。In practical applications, considering the characteristics, size, and price of storage media with different memories, it is usually necessary to deploy hybrid storage in electronic devices, such as mobile terminals, that is, different types of data storage media are deployed in one hybrid storage. For example, deploying hybrid memory that includes DDR, SDRAM, NAND, and NVRAM in mobile terminals. When a hybrid storage is deployed in a mobile terminal, there will be a need for data migration between different storage media of the hybrid storage. How to perform efficient data migration on different storage media becomes a problem.
发明内容Summary of the Invention
本申请的实施例提供一种存储装置及电子设备,用于在封装于所述存储装置中的不同存储器之间进行高效率的数据迁移。Embodiments of the present application provide a storage device and an electronic device, which are used to perform efficient data migration between different memories packaged in the storage device.
为达到上述目的,本申请的实施例采用如下技术方案:To achieve the above purpose, the embodiments of the present application adopt the following technical solutions:
第一方面,提供存储装置,该装置包括:封装、第一存储器、第二存储器、第三存储器;所述控制器,耦合于第一存储器、第二存储器和第三存储器,用于在第一存储器、第二存储器和第三存储器中的至少两个存储器之间迁移数据;第一存储器、第二存储器和第三存储器是不同类型的存储器;该封装用于封装第一存储器、第二存储器、第三存储器和控制器。上述技术方案中,控制器能够在封装于同一封装内的第一存储器、第二存储器和第三存储器中的至少两个存储器之间迁移数据,不必在迁移数据时将数据转移至存储装置外部,提高了效率,且该存储装置体型小,成本低。According to a first aspect, a storage device is provided. The device includes: a package, a first storage, a second storage, and a third storage; and the controller is coupled to the first storage, the second storage, and the third storage, and is used for Data is migrated between at least two of the memory, the second memory, and the third memory; the first memory, the second memory, and the third memory are different types of memory; the package is used to encapsulate the first memory, the second memory, Third memory and controller. In the above technical solution, the controller can migrate data between at least two memories of the first memory, the second memory, and the third memory packaged in the same package, and it is not necessary to transfer the data to the outside of the storage device when the data is migrated. The efficiency is improved, and the storage device is small in size and low in cost.
在第一方面的一种可能的实现方式中,第一存储器是非易失性随机访问存储器(Non-Volatile Random Access Memory,NVRAM),第二存储器是NAND闪存存储器。进一步地,第三存储器是双倍速率(Double Data Rate,DDR)同步动态随机存取存储器(Synchronous Dynamic Random Access Memory,SDRAM),简称DDR SDRAM。使用本技术方案的所述存储装置是一个混合存储器,融合了不同类型存储器。In a possible implementation manner of the first aspect, the first memory is a non-volatile random access memory (Non-Volatile Random Access Memory, NVRAM), and the second memory is a NAND flash memory. Further, the third memory is a double rate (Double Data Rate, DDR) synchronous dynamic random access memory (Synchronous Dynamic Random Access Memory, SDRAM), which is referred to as DDR SDRAM for short. The storage device using the technical solution is a hybrid storage, which integrates different types of storage.
在第一方面的一种可能的实现方式中,该装置还包括:总线和处理器,处理器、控制器、第一存储器、第二存储器和第三存储器耦合至总线,该封装还用于封装总线和处理器;控制器,还用于向处理器获取总线控制权限,并利用总线在所述至少两个存储器之间迁移数据;处理器,用于为控制器授予该总线控制权限。上述可能的实现方式中,控制器能够利用总线在不同存储介质之间进行高效率的数据迁移。In a possible implementation manner of the first aspect, the apparatus further includes: a bus and a processor, the processor, the controller, the first memory, the second memory, and the third memory are coupled to the bus, and the package is also used for packaging A bus and a processor; the controller is further configured to obtain a bus control right from the processor and use the bus to migrate data between the at least two memories; the processor is configured to grant the bus control right to the controller. In the foregoing possible implementation manner, the controller can use the bus to perform efficient data migration between different storage media.
在第一方面的一种可能的实现方式中,控制器还用于在所述至少两个存储器之间迁移数据之前,从所述至少两个存储器中的至少一个存储器接收关于该迁移数据的操作请求。上述可能的实现方式中,控制器能够基于至少一个存储器的操作请求,在不同存储介质之间进行高效率的数据迁移。In a possible implementation manner of the first aspect, the controller is further configured to receive an operation on the migration data from at least one of the at least two memories before migrating the data between the at least two memories. request. In the foregoing possible implementation manner, the controller can perform efficient data migration between different storage media based on an operation request of at least one memory.
在第一方面的一种可能的实现方式中,控制器还用于向所述至少一个存储器发送同意该操作请求的响应。上述可能的实现方式中,控制器能够在获取该总线控制权限之后,通知所述至少一个存储器。In a possible implementation manner of the first aspect, the controller is further configured to send a response agreeing to the operation request to the at least one memory. In the foregoing possible implementation manner, the controller can notify the at least one memory after acquiring the bus control authority.
在第一方面的一种可能的实现方式中,处理器还用于在控制器完成该迁移数据后,释放控制器的总线控制权限。上述可能的实现方式中,通过及时释放控制器的总线控制权限,可以避免控制器长时间控制总线,而对处理器的相关操作造成影响的问题。In a possible implementation manner of the first aspect, the processor is further configured to release the bus control authority of the controller after the controller completes the migration data. In the foregoing possible implementation manner, by releasing the bus control authority of the controller in time, the problem that the controller controls the bus for a long time and affects related operations of the processor can be avoided.
在第一方面的一种可能的实现方式中,该装置还包括:耦合于控制器的接口,用于将第一存储器、第二存储器和第三存储器耦合至位于该存储装置的该封装外的处理设备。上述可能的实现方式中,提供了一种该存储装置与处理设备的耦合方式。In a possible implementation manner of the first aspect, the apparatus further includes: an interface coupled to the controller, configured to couple the first memory, the second memory, and the third memory to an outside of the package of the storage device. Processing equipment. In the foregoing possible implementation manner, a coupling manner of the storage device and a processing device is provided.
在第一方面的一种可能的实现方式中,接口包括至少两个接口。上述可能的实现方式中,提供了一种该存储装置与处理设备的耦合方式。In a possible implementation manner of the first aspect, the interface includes at least two interfaces. In the foregoing possible implementation manner, a coupling manner of the storage device and a processing device is provided.
在第一方面的一种可能的实现方式中,至少两个接口中的任一个是:外设部件互连标准PCIe接口、双倍速率同步动态随机存取存储器DDR SDRAM接口或者通用闪存存储UFS接口。上述可能的实现方式中,提供了几种可能的至少两个接口。In a possible implementation manner of the first aspect, any one of the at least two interfaces is: a peripheral component interconnect standard PCIe interface, a double-rate synchronous dynamic random access memory DDR SDRAM interface, or a universal flash storage UFS interface . In the foregoing possible implementation manners, several possible at least two interfaces are provided.
在第一方面的一种可能的实现方式中,所述封装包括芯片封装。例如,该存储装置包括一个或多个芯片颗粒(Die),使得第一存储器、第二存储器、第三存储器、控制器、总线和处理器位于一个或多个芯片颗粒上。所述封装封装了一个或多个芯片颗粒以形成所述存储装置,实现了存储装置的小型化。In a possible implementation manner of the first aspect, the package includes a chip package. For example, the storage device includes one or more chip particles such that the first memory, the second memory, the third memory, the controller, the bus, and the processor are located on the one or more chip particles. The package encapsulates one or more chip particles to form the storage device, and realizes miniaturization of the storage device.
第二方面,提供一种电子设备,该电子设备包括存储装置和处理设备,该存储装置可以为上述第一方面或者第一方面的任一种可能的实现方式所提供的存储装置。可选的,该处理设备为片上系统(System on Chip,SoC)。According to a second aspect, an electronic device is provided. The electronic device includes a storage device and a processing device. The storage device may be the storage device provided by the foregoing first aspect or any possible implementation manner of the first aspect. Optionally, the processing device is a system-on-chip (SoC).
上述技术方案中,该存储装置中的控制器能够在被封装于同一封装内的第一存储器、第二存储器和第三存储器中的至少两个存储器之间迁移数据,从而实现了在不同存储器的存储介质之间进行高效率的数据迁移。同时,在整个数据迁移过程中无需外部处理设备的参与,从而降低数据迁移时该电子设备的功耗,提高了该电子设备的性能。In the above technical solution, the controller in the storage device can migrate data between at least two memories of the first memory, the second memory, and the third memory that are packaged in the same package, thereby achieving the implementation of different memories. Efficient data migration between storage media. At the same time, no external processing equipment is required to participate in the entire data migration process, thereby reducing the power consumption of the electronic device during data migration and improving the performance of the electronic device.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本申请实施例提供的一种电子设备的结构示意图;FIG. 1 is a schematic structural diagram of an electronic device according to an embodiment of the present application;
图2为本申请实施例提供的一种存储装置的结构示意图一;FIG. 2 is a first schematic structural diagram of a storage device according to an embodiment of the present application; FIG.
图3为本申请实施例提供的一种迁移数据的流程示意图;FIG. 3 is a schematic flowchart of migrating data according to an embodiment of the present application; FIG.
图4为本申请实施例提供的一种存储装置的结构示意图二;FIG. 4 is a second schematic structural diagram of a storage device according to an embodiment of the present application; FIG.
图5为本申请实施例提供的一种存储装置的结构示意图三;FIG. 5 is a third structural schematic diagram of a storage device according to an embodiment of the present application; FIG.
图6为本申请实施例提供的一种存储装置的结构示意图四。FIG. 6 is a fourth structural schematic diagram of a storage device according to an embodiment of the present application.
具体实施方式detailed description
本申请中,“至少一个”是指一个或者多个,“多个”是指两个或两个以上。“和/或”,描述关联对象的关联关系,表示可以存在三种关系,例如,A和/或B,可以表示:单独存在A,同时存在A和B,单独存在B的情况,其中A,B可以是单数或者复数。“以下至少一项(个)”或其类似表达,是指的这些项中的任意组合,包括单项(个)或复数项(个)的任意组合。例如,a,b或c中的至少一项(个),可以表示:a,b,c,a-b,a-c,b-c或a-b-c,其中a、b和c可以是单个,也可以是多个。另外,在本申请的实施例中,“第一”、“第二”等字样并不对数量和执行次序进行限定。In the present application, "at least one" means one or more, and "multiple" means two or more. "And / or" describes the association relationship of related objects, and indicates that there can be three kinds of relationships, for example, A and / or B can represent: the case where A exists alone, A and B exist simultaneously, and B alone exists, where A, B can be singular or plural. "At least one or more of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one (a), a, b, or c may represent: a, b, c, a-b, a-c, b-c, or a-b-c, where a, b, and c may be single or multiple. In addition, in the embodiments of the present application, the words “first”, “second” and the like do not limit the number and execution order.
需要说明的是,本申请中,“示例性的”或者“例如”等词用于表示作例子、例证或说明。本申请中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其他实施例或设计方案更优选或更具优势。确切而言,使用“示例性的”或者“例如”等词旨在以具体方式呈现相关概念。本申请中的“耦合”可以被理解为直接连接或者间接连接,比如,A耦合至B,可以表示:A与B直接连接,或者A与B间接连接。It should be noted that, in this application, words such as "exemplary" or "for example" are used as examples, illustrations, or illustrations. Any embodiment or design described as "exemplary" or "for example" in this application should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of the words "exemplary" or "for example" is intended to present the relevant concept in a concrete manner. "Coupled" in this application can be understood as a direct connection or an indirect connection. For example, A is coupled to B, which can mean that A and B are directly connected, or A and B are indirectly connected.
图1为本申请实施例提供的一种电子设备的结构示意图,该电子设备可以为手机、平板电脑、摄像机、照相机、可穿戴设备、车载设备或便携式设备等。为方便描述,本申请中将上面提到的设备统称为电子设备。本申请实施例以该电子设备为手机为例进行说明,参见图1,该手机包括片上系统(System on Chip,SoC)101、以及耦合至SoC 101的混合存储器102。FIG. 1 is a schematic structural diagram of an electronic device according to an embodiment of the present application. The electronic device may be a mobile phone, a tablet computer, a video camera, a camera, a wearable device, a vehicle-mounted device, or a portable device. For convenience of description, the above-mentioned devices are collectively referred to as electronic devices in this application. The embodiment of the present application uses the electronic device as a mobile phone as an example for description. Referring to FIG. 1, the mobile phone includes a system on chip (SoC) 101 and a hybrid memory 102 coupled to the SoC 101.
其中,SoC 101是手机的控制中心,利用各种接口和线路连接整个设备的各个部分,通过运行或执行存储在混合存储器内的软件程序和/或软件模块,以及调用存储在混合存储器内的数据,执行手机的各种功能和处理数据,从而对手机进行整体监控。在一些可行的实施例中,SoC 101可以包括中央处理器单元、其他各类通用处理器,如数字信号处理器、人工智能处理器、微控制器或微处理器等。除此以外,SoC 101还可包括图形处理器(Graphic Processing Unit,GPU)、图像信号处理器(Image Signal Processor,ISP)、或语音处理器。SoC 101可进一步包括其他硬件电路或加速器,如专用集成电路、现场可编程门阵列或者其他可编程逻辑器件、晶体管逻辑器件、硬件部件或者其任意组合。Among them, SoC 101 is the control center of the mobile phone. It uses various interfaces and lines to connect various parts of the entire device. It runs or executes software programs and / or software modules stored in the hybrid memory, and calls data stored in the hybrid memory. , Perform various functions of the mobile phone and process data, so as to monitor the mobile phone as a whole. In some feasible embodiments, the SoC 101 may include a central processing unit, other types of general-purpose processors, such as digital signal processors, artificial intelligence processors, microcontrollers, or microprocessors. In addition, the SoC 101 may further include a graphics processor (Graphic Processing Unit, GPU), an image signal processor (Image Signal Processor, ISP), or a voice processor. SoC 101 may further include other hardware circuits or accelerators, such as application specific integrated circuits, field programmable gate arrays or other programmable logic devices, transistor logic devices, hardware components, or any combination thereof.
在本申请实施例中,混合存储器102中可以包括不同类型的存储器,SoC 101可以用于对混合存储器102中的任一类型的存储器或者存储介质进行访问。其中,图1中以混合存储器102包括双倍速率(Double Data Rate,DDR)的同步动态随机存取器(Synchronous Dynamic RAM,SDRAM)(简称DDR SDRAM)、NVRAM和NAND闪存存储器、且DDR SDRAM、NVRAM和NAND闪存存储器集成在一起为例进行说明。In the embodiment of the present application, the hybrid memory 102 may include different types of memory, and the SoC 101 may be used to access any type of memory or storage medium in the hybrid memory 102. Among them, the hybrid memory 102 in FIG. 1 includes a double-rate (Double Data Rate, DDR) synchronous dynamic random access memory (Synchronous Dynamic RAM (SDRAM) (DDR SDRAM for short), NVRAM and NAND flash memory, and DDR SDRAM, As an example, NVRAM and NAND flash memory are integrated together.
图1中的混合存储器102则融合了不同类型存储器,例如DDR SDRAM、NVRAM和NAND闪存,也可以进一步包括其他类型的存储。具体可以参照下面实施例的介绍。 混合存储器102中的至少一个存储器或其中存储介质可用于存储数据、软件程序以及模块。例如,任一存储器可包括存储程序区和存储数据区,其中,存储程序区可存储软件程序,包括以代码形成的指令,包括但不限于操作系统、至少一个功能所需的应用程序,比如声音播放功能、图像播放功能等;存储数据区可存储根据手机的使用所创建的数据,比如音频数据、图像数据、电话本等。The hybrid memory 102 in FIG. 1 incorporates different types of memory, such as DDR SDRAM, NVRAM, and NAND flash memory, and may further include other types of storage. For details, refer to the description of the following embodiments. At least one of the memories 102 or a storage medium therein may be used to store data, software programs, and modules. For example, any memory may include a storage program area and a storage data area, where the storage program area may store a software program, including instructions formed in code, including but not limited to an operating system, and applications required for at least one function, such as sound Playback function, image playback function, etc .; The storage data area can store data created according to the use of the mobile phone, such as audio data, image data, phonebook, etc.
进一步地,参见图1,该手机还可以包括传感器组件103、多媒体组件104和输入\输出接口105等,下面分别对上述各个构成部件进行具体的介绍。Further, referring to FIG. 1, the mobile phone may further include a sensor component 103, a multimedia component 104, an input / output interface 105, and the like. Each of the above components will be specifically described below.
其中,传感器组件103包括一个或多个传感器,用于为手机提供各个方面的状态评估。例如,传感器组件103可以包括光传感器,如CMOS或CCD图像传感器,用于在成像应用中使用,即成为相机或摄像头的组成部分。此外,传感器组件103还可以包括加速度传感器,陀螺仪传感器,磁传感器,压力传感器或温度传感器,通过传感器组件103可以检测到手机的加速/减速、方位、打开/关闭状态,组件的相对定位,或手机的温度变化等。Among them, the sensor component 103 includes one or more sensors, which are used to provide various aspects of status assessment for the mobile phone. For example, the sensor component 103 may include a light sensor, such as a CMOS or CCD image sensor, for use in imaging applications, that is, to become a component of a camera or a camera. In addition, the sensor component 103 may further include an acceleration sensor, a gyroscope sensor, a magnetic sensor, a pressure sensor or a temperature sensor. The sensor component 103 can detect the acceleration / deceleration, orientation, open / close state of the mobile phone, relative positioning of the component, or Cell phone temperature changes, etc.
多媒体组件104在手机和用户之间提供作为一个输出接口的屏幕,该屏幕可以为显示面板或触摸面板,且当该屏幕为触摸面板时,屏幕可以被实现为触摸屏,以接收来自用户的输入信号。触摸面板包括一个或多个触摸传感器以感测触摸、滑动和触摸面板上的手势。所述触摸传感器可以不仅感测触摸或滑动动作的边界,而且还检测与所述触摸或滑动操作相关的持续时间和压力。此外,多媒体组件104还包括至少一个摄像头,比如,多媒体组件104包括一个前置摄像头和/或后置摄像头。当手机处于操作模式,如拍摄模式或视频模式时,前置摄像头和/或后置摄像头可以感应外部的多媒体信号,该信号被用于形成图像帧。每个前置摄像头和后置摄像头可以是一个固定的光学透镜系统或具有焦距和光学变焦能力。The multimedia component 104 provides a screen as an output interface between the mobile phone and the user. The screen can be a display panel or a touch panel. When the screen is a touch panel, the screen can be implemented as a touch screen to receive input signals from the user. . The touch panel includes one or more touch sensors to sense touch, swipe, and gestures on the touch panel. The touch sensor may not only sense a boundary of a touch or slide action, but also detect duration and pressure related to the touch or slide operation. In addition, the multimedia component 104 further includes at least one camera. For example, the multimedia component 104 includes a front camera and / or a rear camera. When the mobile phone is in an operation mode, such as a shooting mode or a video mode, the front camera and / or the rear camera can sense an external multimedia signal, which is used to form an image frame. Each front camera and rear camera can be a fixed optical lens system or have focal length and optical zoom capabilities.
输入\输出接口105为SoC 101和外围接口模块之间提供接口,比如,外围接口模块可以包括键盘、鼠标、或USB(通用串行总线)设备等。在一种可能的实现方式中,输入\输出接口105可以只有一个输入\输出接口,也可以有多个输入\输出接口。The input / output interface 105 provides an interface between the SoC 101 and a peripheral interface module. For example, the peripheral interface module may include a keyboard, a mouse, or a USB (Universal Serial Bus) device. In a possible implementation manner, the input \ output interface 105 may have only one input \ output interface, or may have multiple input \ output interfaces.
尽管未示出,手机还可以包括音频组件和通信组件等,比如,音频组件包括麦克风,通信组件包括无线保真(Wireless Fidelity,WiFi)模块、蓝牙模块等,本申请实施例在此不再赘述。本领域技术人员可以理解,图1中示出的手机结构并不构成对手机的限定,可以包括比图示更多或更少的部件,或者组合某些部件,或者不同的部件布置。可以理解,图1所示的所有元器件可以位于同一个电路主板上,本实施例不做限定。Although not shown, the mobile phone may further include an audio component and a communication component, for example, the audio component includes a microphone, and the communication component includes a wireless fidelity (WiFi) module, a Bluetooth module, and the like, which are not described in the embodiment of this application. . Those skilled in the art can understand that the structure of the mobile phone shown in FIG. 1 does not constitute a limitation on the mobile phone, and may include more or fewer parts than those shown in the figure, or combine certain parts, or arrange different parts. It can be understood that all the components shown in FIG. 1 may be located on the same circuit board, which is not limited in this embodiment.
为了具体说明图1中的混合存储器102,图2为本申请实施例提供的一种存储装置的结构示意图,该装置对应混合存储器102,包括:封装201、第一存储器202、第二存储器203、第三存储器204、控制器205、处理器206和总线207。其中,第一存储器202、第二存储器203、第三存储器204、控制器205和处理器206耦合至总线207。需要说明的是,本图2对应的实施例以存储装置内包括三个存储器为例,实际上存储装置内可包括更多数量的存储器,这些存储器的类型通常不同以形成混合存储器,本实施例仅以包括第一存储器202、第二存储器203和第三存储器204为例作介绍,但不用于限定。In order to specifically describe the hybrid memory 102 in FIG. 1, FIG. 2 is a schematic structural diagram of a storage device provided by an embodiment of the present application. The device corresponds to the hybrid memory 102 and includes a package 201, a first memory 202, a second memory 203, The third memory 204, the controller 205, the processor 206, and the bus 207. The first memory 202, the second memory 203, the third memory 204, the controller 205, and the processor 206 are coupled to the bus 207. It should be noted that the embodiment corresponding to FIG. 2 takes three memories in the storage device as an example. In fact, the storage device may include a larger number of memories. The types of these memories are usually different to form a hybrid memory. This embodiment The introduction includes only the first memory 202, the second memory 203, and the third memory 204 as an example, but it is not limited.
在本申请实施例中,控制器205用于在第一存储器202、第二存储器203和第三存储器204中的至少两个存储器之间迁移数据。为便于描述,下面仅以至少两个存储器包括第一存储器202和第二存储器203为例进行说明,在第一存储器202和第二存储器203之间的迁移数据包括如下至少一项:从第一存储器202迁移数据至第二存储器203、或从第二存储器203迁移数据至第一存储器202。封装201用于封装第一存储器202、第二存储器203、第三存储器204、控制器205、处理器206和总线207。由于所述封装201的存在,该存储装置体型小,成本低,且能达到较好性能。在执行所述数据迁移的时候,不需要将数据转移至所述存储装置外部,即在所述封装内完成,效率高。例如,所述控制器205是直接内存存取(DMA)设备。In the embodiment of the present application, the controller 205 is configured to migrate data between at least two memories among the first memory 202, the second memory 203, and the third memory 204. For ease of description, the following only uses at least two memories including the first memory 202 and the second memory 203 as an example for description. The migration data between the first memory 202 and the second memory 203 includes at least one of the following: The memory 202 migrates data to or from the second memory 203. The package 201 is used to package the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207. Due to the existence of the package 201, the storage device has a small size, low cost, and can achieve better performance. When performing the data migration, the data does not need to be transferred to the outside of the storage device, that is, it is completed within the package, and the efficiency is high. For example, the controller 205 is a direct memory access (DMA) device.
本实施例提到的封装201可以是芯片封装,用来封装一个或多个芯片颗粒。例如,该存储装置包括所述一个或多个芯片颗粒(Die),使得第一存储器202、第二存储器203、第三存储器204、控制器205、处理器206和总线207位于所述一个或多个芯片颗粒上。所述封装201封装了该一个或多个芯片颗粒以形成所述存储装置,实现了存储装置的小型化。芯片封装采用的具体技术可以选择现有封装技术,本实施例对此不做限定。由于所述存储装置作为一个整体存在,其内部的数据迁移不依赖于外部,效率高。所述封装201包裹第一存储器202、第二存储器203、第三存储器204、控制器205、处理器206和总线207,可以很好地实现防尘、防水、或防静电,使得所述存储装置作为一个独立的位于电路主板上的器件。The package 201 mentioned in this embodiment may be a chip package for packaging one or more chip particles. For example, the storage device includes the one or more chips, such that the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207 are located in the one or more Chips on the chip. The package 201 encapsulates the one or more chip particles to form the storage device, thereby achieving miniaturization of the storage device. The specific technology used for chip packaging may be selected from existing packaging technologies, which is not limited in this embodiment. Since the storage device exists as a whole, the internal data migration does not depend on the outside, and the efficiency is high. The package 201 wraps the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207, which can well implement dustproof, waterproof, or antistatic, so that the storage device As a separate device located on the circuit board.
其中,第一存储器202、第二存储器203和第三存储器204是不同类型的存储器。在一种可能的实现方式中,第一存储器202是非易失性随机访问存储器(Non-Volatile Random Access Memory,NVRAM),第二存储器203是NAND闪存存储器,第三存储器204是双倍速率同步动态随机存取存储器DDR SDRAM。第一存储器202、第二存储器203和第三存储器204中的任一个可包括存储介质,也可进一步包括必要的电路,如读取和写入存储介质的控制电路,例如寻址电路,本实施例对此不做限定。不同类型的存储器其具有不同类型的存储介质,也可以具有不同类型的控制电路。The first memory 202, the second memory 203, and the third memory 204 are different types of memories. In a possible implementation manner, the first memory 202 is a non-volatile random access memory (Non-Volatile Random Access Memory, NVRAM), the second memory 203 is a NAND flash memory, and the third memory 204 is a double-rate synchronous dynamic Random access memory DDR SDRAM. Any one of the first memory 202, the second memory 203, and the third memory 204 may include a storage medium, and may further include necessary circuits, such as a control circuit for reading and writing to the storage medium, such as an addressing circuit. Examples do not limit this. Different types of memories have different types of storage media, and may also have different types of control circuits.
另外,这里以控制器204从第一存储器202迁移数据至第二存储器203为例,对控制器204用于在第一存储器202、第二存储器203和第三存储器204中的至少两个存储器之间迁移数据进行举例说明。具体地,控制器205从第一存储器202迁移数据至第二存储器203的具体过程可以包括:1、第一存储器202向控制器205发送操作请求,该操作请求用于请求将第一存储器202中的数据迁移至第二存储器203;2、当控制器205接收到该操作请求时,控制器205可以向处理器206获取总线控制权限,比如,控制器205向处理器206发送用于请求获取总线控制权限的总线控制请求;3、处理器206为控制器205授予总线控制权限,比如,处理器206向控制器205发送同意上述总线控制请求的响应;4、在控制器205获取到总线控制权限后,控制器205可以向第一存储器202发送同意该操作请求的响应;5、控制器205利用总线207将第一存储器中的数据迁移至第二存储器中,比如,控制器205使能第一存储器202的读通道,以利用总线从第一存储器中读取数据,在数据读取完成之后,第一存储器202可以向控制器205发送数据读取结束响应。此外,控制器205使能第二存储器203的写通道,以利用总线将读取的数据写入第二存储器中,在数据写入完成之后,第二存储器203可以向控 制器205发送数据写入结束响应。进一步地,在控制器205完成上述迁移数据后,处理器206还可以释放控制器205的总线控制权限。In addition, here, the controller 204 is used to migrate data from the first memory 202 to the second memory 203 as an example. The controller 204 is used for at least two memories among the first memory 202, the second memory 203, and the third memory 204. Inter-migration data is exemplified. Specifically, the specific process in which the controller 205 migrates data from the first memory 202 to the second memory 203 may include: 1. The first memory 202 sends an operation request to the controller 205, where the operation request is used to request that the first memory 202 Data is transferred to the second memory 203; 2. When the controller 205 receives the operation request, the controller 205 may obtain the bus control authority from the processor 206, for example, the controller 205 sends the processor 206 to request the bus The bus control request that controls the authority; 3. The processor 206 grants the bus control authority to the controller 205, for example, the processor 206 sends a response to the controller 205 that agrees with the above bus control request; 4. The bus control authority is obtained at the controller 205 After that, the controller 205 may send a response agreeing to the operation request to the first memory 202; 5. The controller 205 uses the bus 207 to migrate the data in the first memory to the second memory, for example, the controller 205 enables the first The read channel of the memory 202 to use the bus to read data from the first memory. After the data is read, the first memory 202 can System 205 transmits a data reading end response. In addition, the controller 205 enables the write channel of the second memory 203 to use the bus to write the read data into the second memory. After the data writing is completed, the second memory 203 can send the data write to the controller 205 End response. Further, after the controller 205 completes the above-mentioned migration data, the processor 206 may also release the bus control authority of the controller 205.
示例性的,假设第一存储器202为NVRAM,第二存储器203是NAND闪存存储器,则上述控制器204从NVRAM迁移数据至NAND闪存存储器的流程示意图可以如图3所示。图3中的SC_REQ表示操作请求,SC_RESP表示同意该操作请求的响应,BH_REQ表示总线控制请求,BH_RESP表示同意该总线控制请求的响应,R_EN表示使能读通道,W_EN表示使能写通道,每个存储器均有对应的R_EN和W_EN。5a表示上述步骤5中使能第一存储器202的读通道R_EN的操作,5b表示上述步骤5中使能第二存储器203的写通道W_EN的操作。图3为以总线207包括如图3所示的数据总线和地址总线、以及NVRAM和NAND闪存存储器各对应一个R_EN和W_EN为例进行说明。Exemplarily, assuming that the first memory 202 is NVRAM and the second memory 203 is NAND flash memory, the flow chart of the controller 204 migrating data from NVRAM to NAND flash memory can be shown in FIG. 3. SC_REQ in Figure 3 indicates the operation request, SC_RESP indicates the response to the operation request, BH_REQ indicates the bus control request, BH_RESP indicates the response to the bus control request, R_EN indicates the read channel is enabled, and W_EN indicates the write channel is enabled. The memories have corresponding R_EN and W_EN. 5a indicates the operation of enabling the read channel R_EN of the first memory 202 in step 5 above, and 5b indicates the operation of enabling the write channel W_EN of the second memory 203 in step 5 above. FIG. 3 is an example in which the bus 207 includes a data bus and an address bus as shown in FIG. 3, and each of the NVRAM and the NAND flash memory corresponds to one R_EN and W_EN.
需要说明的是,控制器205从第二存储器203迁移数据至第一存储器202的具体过程与上述控制器205从第一存储器202迁移数据至第二存储器203的具体过程类似,具体可以参见上述描述。另外,控制器204在第一存储器202、第二存储器203和第三存储器204中的至少两个存储器之间迁移数据的具体过程与上述在第一存储器202和第二存储器203之间迁移数据的具体过程也类似,具体可以参见上述描述,本申请实施例在此不再赘述。可以理解,至少两个存储器之间可以同时双向传输或仅单向传输,本实施例不做限定。It should be noted that the specific process of the controller 205 migrating data from the second memory 203 to the first memory 202 is similar to the specific process of the controller 205 migrating data from the first memory 202 to the second memory 203. For details, refer to the foregoing description. . In addition, the specific process of the controller 204 migrating data between at least two memories of the first memory 202, the second memory 203, and the third memory 204 and the above-mentioned process of migrating data between the first memory 202 and the second memory 203 The specific process is also similar. For details, refer to the foregoing description, which is not repeatedly described in the embodiment of the present application. It can be understood that at least two memories can be transmitted in both directions simultaneously or only in one direction, which is not limited in this embodiment.
在实际应用中,作为一个可替换的实施例,第一存储器202和第二存储器203也可以使用同种类型的存储介质,控制器205也可以按照上述方式在同种类型的两个存储介质之间迁移数据。通常来说,第一存储器202和第二存储器203使用不同类型的存储介质,这是一种更为常见的选择。当第一存储器202和第二存储器203使用同种类型的存储介质,两个存储器是同样的存储器,因此,包括这两个存储器的存储装置属于非混合存储器,但依然可以达到类似的功能。在两个存储器之间迁移数据的时候,依然不必将数据转移至该存储装置的外部,也可提高效率。In practical applications, as an alternative embodiment, the first storage 202 and the second storage 203 may also use the same type of storage medium, and the controller 205 may also use the same type of storage medium between the two types of storage media. Migrating data between. Generally speaking, the first storage 202 and the second storage 203 use different types of storage media, which is a more common choice. When the first memory 202 and the second memory 203 use the same type of storage medium, the two memories are the same memory. Therefore, the storage device including the two memories is a non-hybrid memory, but still can achieve similar functions. When migrating data between two memories, it is still not necessary to transfer the data to the outside of the storage device, and efficiency can be improved.
进一步地,该装置还包括:耦合于控制器205的接口208,用于将第一存储器202、第二存储器203和第二存储器204耦合至位于该存储装置的封装201外的处理设备。其中,接口208可以包括:至少两个接口。可选的,至少两个接口中的任一个是:外设部件互连标准(Peripheral Component Interconnect express,PCIe)接口,双倍速率同步动态随机存取存储器DDR SDRAM接口、或通用闪存存储(Universal Flash Storage,UFS)接口。Further, the device further includes an interface 208 coupled to the controller 205, for coupling the first memory 202, the second memory 203, and the second memory 204 to a processing device located outside the package 201 of the storage device. The interface 208 may include: at least two interfaces. Optionally, any one of the at least two interfaces is: Peripheral Component Interconnect Standard (PCIe) interface, double-rate synchronous dynamic random access memory DDR SDRAM interface, or universal flash storage (Universal Flash Storage (UFS) interface.
在一种可能的实现方式中,参见图4,接口208包括UFS接口和DDR SDRAM接口,该DDR SDRAM接口用于将第一存储器202和第三存储器204均耦合至位于该存储装置的封装201外的处理设备,该UFS接口用于将第二存储器203耦合至位于该存储装置的封装201外的处理设备,例如该处理设备可以是图1所示的SoC 101或包括SoC 101的电路主板等。即控制器205可以通过该DDR SDRAM接口与该处理设备传输第一存储器202的数据或第三存储器204的数据、通过该UFS接口与该处理设备传输第二存储器203的数据,该数据可以包括读取的数据和写入的数据。在另一种可能的实现方式中,参见图5,接口208包括PCIe接口、UFS接口和DDR SDRAM接口;其中,该PCIe接口用于将第一存储器202耦合至封装201外的处理设备,即控制器 205可以通过该PCIe接口与该处理设备传输第一存储器202的数据;UFS接口用于将第二存储器203耦合至封装201外的处理设备,即控制器205可以通过该UFS接口与该处理设备传输第二存储器203的数据;DDR SDRAM接口用于将第三存储器204耦合至封装201外的处理设备,即控制器205可以通过该DDR SDRAM接口与该处理设备传输第三存储器204的数据。In a possible implementation manner, referring to FIG. 4, the interface 208 includes a UFS interface and a DDR SDRAM interface. The DDR SDRAM interface is used to couple the first memory 202 and the third memory 204 to the outside of the package 201 of the storage device. The UFS interface is used to couple the second memory 203 to a processing device located outside the package 201 of the storage device. For example, the processing device may be the SoC 101 shown in FIG. 1 or a circuit motherboard including the SoC 101. That is, the controller 205 can transmit the data of the first memory 202 or the third memory 204 with the processing device through the DDR SDRAM interface and the data of the second memory 203 with the processing device through the UFS interface. The data can include reading Fetched data and written data. In another possible implementation manner, referring to FIG. 5, the interface 208 includes a PCIe interface, a UFS interface, and a DDR SDRAM interface. The PCIe interface is used to couple the first memory 202 to a processing device outside the package 201, that is, to control. The processor 205 can transmit the data of the first memory 202 to the processing device through the PCIe interface; the UFS interface is used to couple the second memory 203 to the processing device outside the package 201, that is, the controller 205 can communicate with the processing device through the UFS interface The data of the second memory 203 is transmitted; the DDR SDRAM interface is used to couple the third memory 204 to a processing device outside the package 201, that is, the controller 205 can transmit the data of the third memory 204 to the processing device through the DDR SDRAM interface.
需要说明的是,这里仅以接口208包括PCIe接口、UFS接口和/或DDR SDRAM接口为例进行说明,在实际应用中,接口208还可以包括嵌入式多媒体控制器(Embedded Multi Media Card,eMMC)接口等,可用于将位于混合存储器中的eMMC存储器耦合至处理设备,本申请实施例对此不作具体限定。本实施例提到的接口的类型也是可以扩展的,并不必限于本实施例所列举的类型。It should be noted that the interface 208 includes only a PCIe interface, a UFS interface, and / or a DDR SDRAM interface as an example for description. In practical applications, the interface 208 may also include an embedded multimedia controller (Embedded MultiMedia Card, eMMC). The interface and the like may be used to couple the eMMC memory located in the hybrid memory to the processing device, which is not specifically limited in the embodiment of the present application. The types of interfaces mentioned in this embodiment are also extensible and are not necessarily limited to the types listed in this embodiment.
在本申请实施例提供的存储装置中,控制器205能够在封装于同一封装内的第一存储器202、第二存储器203和第三存储器204中的至少两个存储器之间迁移数据,从而实现了在不同存储介质之间进行高效率的数据迁移。例如,所述控制器205是DMA设备,用于代替SoC101中的DMA设备实现所述数据迁移。该存储装置内置的DMA设备使得在迁移数据时不必将数据转移至存储装置外部,提高了效率。同时,将该存储装置应用在包括处理设备的电子设备中时,整个数据迁移过程无需该处理设备的参与,从而降低数据迁移时该电子设备的功耗,提高了该电子设备的性能。In the storage device provided in the embodiment of the present application, the controller 205 can migrate data between at least two memories of the first memory 202, the second memory 203, and the third memory 204 packaged in the same package, thereby achieving Efficient data migration between different storage media. For example, the controller 205 is a DMA device, and is configured to implement the data migration instead of the DMA device in the SoC101. The DMA device built in the storage device makes it unnecessary to transfer the data to the outside of the storage device when migrating data, which improves efficiency. At the same time, when the storage device is applied to an electronic device including a processing device, the entire data migration process does not require the participation of the processing device, thereby reducing the power consumption of the electronic device during data migration and improving the performance of the electronic device.
在本申请的另一实施例中,还提供一种存储装置,如图6所示,该存储装置包括:封装301、第一存储器302、第二存储器303、第三存储器304、耦合于第一存储器302的第一控制器305、耦合于第二存储器303的第二控制器306、耦合于第三存储器304的第三控制器307,处理器308和总线309。其中,第一存储器302、第二存储器303、第三存储器304、第一控制器305、第二控制器306、第三控制器307和处理器308耦合至总线309。In another embodiment of the present application, a storage device is further provided. As shown in FIG. 6, the storage device includes: a package 301, a first memory 302, a second memory 303, a third memory 304, and a first memory coupled to the first memory. The first controller 305 of the memory 302, the second controller 306 coupled to the second memory 303, the third controller 307 coupled to the third memory 304, the processor 308, and the bus 309. The first memory 302, the second memory 303, the third memory 304, the first controller 305, the second controller 306, the third controller 307, and the processor 308 are coupled to the bus 309.
在本申请实施例中,封装301用于封装第一存储器302、第二存储器303、第三存储器304、第一控制器305、第二控制器306、第三控制器307、处理器308和总线309。其中,第一存储器302、第二存储器303和第三存储器304可以是不同类型的存储器;在一种可能的实现方式中,第一存储器302可以是NVRAM,第二存储器303可以是NAND闪存存储器,第三存储器304是DDR SDRAM,但是不用于限定,例如,存储装置可以包括更多其他类型的存储器。In the embodiment of the present application, the package 301 is used to package the first memory 302, the second memory 303, the third memory 304, the first controller 305, the second controller 306, the third controller 307, the processor 308, and the bus. 309. The first memory 302, the second memory 303, and the third memory 304 may be different types of memories. In a possible implementation manner, the first memory 302 may be NVRAM, and the second memory 303 may be a NAND flash memory. The third memory 304 is DDR SDRAM, but it is not used for limitation. For example, the storage device may include more other types of memory.
进一步地,该存储装置还包括:耦合于第一控制器305的第一接口310,用于将第一存储器302耦合至位于该存储装置的封装301外的处理设备;和耦合于第二控制器306的第二接口311,用于将第二存储器303耦合至位于该存储装置的封装301外的处理设备;和耦合于第三控制器307的第三接口312,用于将第三存储器304耦合至位于该存储装置的封装301外的处理设备。其中,第一接口310可以包括PCIe接口,即第一控制器305可以通过该PCIe接口与该处理设备传输第一存储器302的数据;第二接口311可以包括UFS接口,即第二控制器306可以通过该UFS接口与该处理设备传输第二存储器303的数据;第三接口312可以包括DDR SDRAM接口,即第三控制器307可以通过该DDR SDRAM接口与该处理设备传输第三存储器304的数据。需要说明的是,这里仅以PCIe接口、UFS接口和/或DDR SDRAM接口为例进行说明,在实 际应用中,第一接口、第二接口和第三接口还可以包括其他接口等,本申请实施例对此不作具体限定。Further, the storage device further includes: a first interface 310 coupled to the first controller 305, for coupling the first memory 302 to a processing device located outside the package 301 of the storage device; and coupled to the second controller A second interface 311 of 306 is used for coupling the second memory 303 to a processing device located outside the package 301 of the storage device; and a third interface 312 of the third controller 307 is used for coupling the third memory 304 To processing equipment located outside the package 301 of the storage device. The first interface 310 may include a PCIe interface, that is, the first controller 305 may transmit data of the first memory 302 to the processing device through the PCIe interface; the second interface 311 may include a UFS interface, that is, the second controller 306 may The data of the second memory 303 is transmitted to the processing device through the UFS interface; the third interface 312 may include a DDR SDRAM interface, that is, the third controller 307 may transmit data of the third memory 304 to the processing device through the DDR SDRAM interface. It should be noted that the PCIe interface, UFS interface, and / or DDR SDRAM interface are used as examples for illustration. In practical applications, the first interface, the second interface, and the third interface may also include other interfaces. Examples do not specifically limit this.
本申请实施例还提供一种电子设备,该电子设备可以包括如前实施例所述的存储装置和处理设备,该存储装置可以如上述图2、图4、图5或者图6所示。其中,该处理设备可以为片上系统SoC 101。具体的,该电子设备的结构示意图可以如图1所示。An embodiment of the present application further provides an electronic device. The electronic device may include a storage device and a processing device according to the foregoing embodiments. The storage device may be as shown in the foregoing FIG. 2, FIG. 4, FIG. 5, or FIG. 6. The processing device may be a system-on-chip SoC 101. Specifically, a schematic structural diagram of the electronic device may be shown in FIG. 1.
本实施例的存储装置作为一个混合存储器,包括了内置的不同类型存储器或存储介质,并在内部实现不同存储器之间的数据转移。例如,不同存储器可包括NVRAM、NAND闪存存储器和DDR SDRAM。NVRAM通常的存储容量小,而NAND闪存存储器容量更大,并且NVRAM可作为NAND闪存存储器的数据缓存,达到好的性能。在本实施例的混合存储器结构中,例如图2所示的存储装置中,第一存储器202、第二存储器203、第三存储器204、控制器205、处理器206和总线207可以位于一个芯片颗粒中,形成一个整体。或者,这些部件可位于不同的多个芯片颗粒中,但被一个封装所封装起来,依然可以实现装置小型化的优点。例如,第一存储器202、第二存储器203和第三存储器204由于是不同类型的存储器,可以位于不同的芯片颗粒上。此外,控制器205、处理器206和总线207可以位于另一个独立芯片颗粒上,实现控制功能。控制器205可以是DMA设备,其内置于存储装置的封装置,成为存储装置的一部分,用于所述数据迁移。因此数据迁移无需经过外部的设备,例如不需要SoC 101中的DMA设备参与。As a hybrid memory, the storage device of this embodiment includes built-in different types of memories or storage media, and internally transfers data between different memories. For example, different memories may include NVRAM, NAND flash memory, and DDR SDRAM. NVRAM generally has a small storage capacity, while NAND flash memory has a larger capacity, and NVRAM can be used as a data cache for NAND flash memory to achieve good performance. In the hybrid memory structure of this embodiment, for example, in the storage device shown in FIG. 2, the first memory 202, the second memory 203, the third memory 204, the controller 205, the processor 206, and the bus 207 may be located on one chip. To form a whole. Alternatively, these components may be located in different multiple chip particles, but are packaged in a package, and the advantages of miniaturization of the device can still be achieved. For example, since the first memory 202, the second memory 203, and the third memory 204 are different types of memories, they may be located on different chip particles. In addition, the controller 205, the processor 206, and the bus 207 may be located on another independent chip particle to implement a control function. The controller 205 may be a DMA device, which is built into the storage device and becomes a part of the storage device for the data migration. Therefore, data migration does not need to go through external equipment, for example, DMA equipment in SoC 101 is not required to participate.
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以所述权利要求的保护范围为准。The above is only a specific implementation of this application, but the scope of protection of this application is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in this application. It should be covered by the protection scope of this application. Therefore, the protection scope of this application shall be subject to the protection scope of the claims.

Claims (12)

  1. 一种存储装置,其特征在于,所述装置包括:封装、第一存储器、第二存储器、第三存储器和控制器;A storage device, characterized in that the device includes: a package, a first memory, a second memory, a third memory, and a controller;
    所述控制器,耦合于所述第一存储器、所述第二存储器和所述第三存储器,用于在所述第一存储器、所述第二存储器和所述第三存储器中的至少两个存储器之间迁移数据;The controller is coupled to the first memory, the second memory, and the third memory, and is used for at least two of the first memory, the second memory, and the third memory Migrating data between storages;
    所述第一存储器、所述第二存储器和所述第三存储器是不同类型的存储器;The first memory, the second memory, and the third memory are different types of memories;
    所述封装用于封装所述第一存储器、所述第二存储器、所述第三存储器和所述控制器。The package is used to package the first memory, the second memory, the third memory, and the controller.
  2. 根据权利要求1所述的存储装置,其特征在于,所述第一存储器是非易失性随机访问存储器NVRAM,所述第二存储器是NAND闪存存储器。The storage device according to claim 1, wherein the first memory is a non-volatile random access memory NVRAM, and the second memory is a NAND flash memory.
  3. 根据权利要求2所述的存储装置,其特征在于,所述第三存储器是双倍速率同步动态随机存取存储器DDR SDRAM。The storage device according to claim 2, wherein the third memory is a double-rate synchronous dynamic random access memory (DDRS).
  4. 根据权利要求1-3任一项所述的存储装置,其特征在于,所述装置还包括:总线和处理器,所述处理器、所述控制器、所述第一存储器、所述第二存储器和所述第三存储器耦合至所述总线,所述封装还用于封装所述总线和所述处理器;The storage device according to any one of claims 1-3, wherein the device further comprises: a bus and a processor, the processor, the controller, the first memory, and the second A memory and the third memory are coupled to the bus, and the package is further configured to encapsulate the bus and the processor;
    所述控制器,还用于向所述处理器获取总线控制权限,并利用所述总线在所述至少两个存储器之间迁移数据;The controller is further configured to obtain bus control authority from the processor, and use the bus to migrate data between the at least two memories;
    所述处理器,用于为所述控制器授予所述总线控制权限。The processor is configured to grant the bus control authority to the controller.
  5. 根据权利要求4所述的存储装置,其特征在于,所述控制器,还用于在所述至少两个存储器之间迁移数据之前,从所述至少两个存储器中的至少一个存储器接收关于所述迁移数据的操作请求。The storage device according to claim 4, wherein the controller is further configured to receive information about all data from at least one of the at least two memories before migrating data between the at least two memories. The operation request for migrating data is described.
  6. 根据权利要求5所述的存储装置,其特征在于,所述控制器,还用于向所述至少一个存储器发送同意所述操作请求的响应。The storage device according to claim 5, wherein the controller is further configured to send a response agreeing to the operation request to the at least one memory.
  7. 根据权利要求4-6任一项所述的存储装置,其特征在于,所述处理器,还用于在所述控制器完成所述迁移数据后,释放所述控制器的所述总线控制权限。The storage device according to any one of claims 4-6, wherein the processor is further configured to release the bus control authority of the controller after the controller completes the migration data. .
  8. 根据权利要求1-7任一项所述的存储装置,其特征在于,所述装置还包括:耦合于所述控制器的接口,用于将所述第一存储器、所述第二存储器和所述第三存储器耦合至位于所述封装外的处理设备。The storage device according to any one of claims 1-7, wherein the device further comprises: an interface coupled to the controller, configured to connect the first memory, the second memory, and all The third memory is coupled to a processing device located outside the package.
  9. 根据权利要求8所述的存储装置,其特征在于,所述接口包括至少两个接口。The storage device according to claim 8, wherein the interface comprises at least two interfaces.
  10. 根据权利要求9所述的存储装置,其特征在于,所述至少两个接口中的任一个是:外设部件互连标准PCIe接口、双倍速率同步动态随机存取存储器DDR SDRAM接口或者通用闪存存储UFS接口。The storage device according to claim 9, wherein any one of the at least two interfaces is: a peripheral component interconnect standard PCIe interface, a double-rate synchronous dynamic random access memory (DDR) SDRAM interface, or a general-purpose flash memory Store UFS interface.
  11. 一种电子设备,其特征在于,包括如权利要求8-10任一项所述的存储装置、以及所述处理设备。An electronic device, comprising the storage device according to any one of claims 8 to 10, and the processing device.
  12. 根据权利要求11所述的电子设备,其特征在于,所述处理设备为片上系统SoC。The electronic device according to claim 11, wherein the processing device is a system-on-chip (SoC).
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